TWI561915B - Resist composition and method of forming resist pattern - Google Patents

Resist composition and method of forming resist pattern

Info

Publication number
TWI561915B
TWI561915B TW102106725A TW102106725A TWI561915B TW I561915 B TWI561915 B TW I561915B TW 102106725 A TW102106725 A TW 102106725A TW 102106725 A TW102106725 A TW 102106725A TW I561915 B TWI561915 B TW I561915B
Authority
TW
Taiwan
Prior art keywords
resist
forming
resist pattern
composition
resist composition
Prior art date
Application number
TW102106725A
Other languages
English (en)
Other versions
TW201403221A (zh
Inventor
Naoto Motoike
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW201403221A publication Critical patent/TW201403221A/zh
Application granted granted Critical
Publication of TWI561915B publication Critical patent/TWI561915B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
TW102106725A 2012-02-29 2013-02-26 Resist composition and method of forming resist pattern TWI561915B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012044692A JP5887166B2 (ja) 2012-02-29 2012-02-29 レジスト組成物及びレジストパターン形成方法

Publications (2)

Publication Number Publication Date
TW201403221A TW201403221A (zh) 2014-01-16
TWI561915B true TWI561915B (en) 2016-12-11

Family

ID=49157952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102106725A TWI561915B (en) 2012-02-29 2013-02-26 Resist composition and method of forming resist pattern

Country Status (4)

Country Link
US (1) US8945812B2 (zh)
JP (1) JP5887166B2 (zh)
KR (1) KR101727354B1 (zh)
TW (1) TWI561915B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201245860A (en) * 2011-03-28 2012-11-16 Sumitomo Chemical Co Photoresist composition

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US3280152A (en) * 1960-09-13 1966-10-18 Union Carbide Corp Epoxy alcohol compounds
US3607800A (en) * 1969-02-24 1971-09-21 Desoto Inc Water-dispersible polyurethane resins
US4495317A (en) * 1980-04-25 1985-01-22 Deft Chemical Coatings, Inc. Warer reducible epoxy coating composition
JPH04140752A (ja) * 1990-10-01 1992-05-14 Mitsubishi Kasei Corp 平版印刷版の製造方法
US6232361B1 (en) * 1998-12-11 2001-05-15 Sun Chemical Corporation Radiation curable water based cationic inks and coatings
JP2002278052A (ja) * 2001-03-16 2002-09-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2004251975A (ja) * 2003-02-18 2004-09-09 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP4976140B2 (ja) * 2007-01-09 2012-07-18 株式会社ダイセル レジスト組成物
JP2009025707A (ja) 2007-07-23 2009-02-05 Fujifilm Corp ネガ型現像用レジスト組成物及びこれを用いたパターン形成方法
JP5172494B2 (ja) 2008-06-23 2013-03-27 東京応化工業株式会社 液浸露光用レジスト組成物、レジストパターン形成方法、含フッ素高分子化合物
JP2010026359A (ja) * 2008-07-23 2010-02-04 Toray Ind Inc ポジ型感光性樹脂組成物
JP5542413B2 (ja) 2008-11-12 2014-07-09 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP2012516874A (ja) * 2009-02-06 2012-07-26 ディーエスエム アイピー アセッツ ビー．ブイ． キラルなα−アリールプロピオン酸誘導体の合成方法
JP5264575B2 (ja) * 2009-03-11 2013-08-14 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5783687B2 (ja) 2009-06-23 2015-09-24 住友化学株式会社 樹脂及びレジスト組成物
JP5551412B2 (ja) 2009-07-22 2014-07-16 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
JP5620686B2 (ja) * 2010-02-08 2014-11-05 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法及び半導体装置
KR101739591B1 (ko) * 2010-07-20 2017-05-25 동우 화인켐 주식회사 포지티브 포토레지스트 조성물
JP5708522B2 (ja) * 2011-02-15 2015-04-30 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP2013171085A (ja) * 2012-02-17 2013-09-02 Tokyo Ohka Kogyo Co Ltd レジスト組成物及びレジストパターン形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201245860A (en) * 2011-03-28 2012-11-16 Sumitomo Chemical Co Photoresist composition

Also Published As

Publication number Publication date
TW201403221A (zh) 2014-01-16
US8945812B2 (en) 2015-02-03
JP5887166B2 (ja) 2016-03-16
JP2013182083A (ja) 2013-09-12
KR101727354B1 (ko) 2017-04-14
US20130244176A1 (en) 2013-09-19
KR20130099848A (ko) 2013-09-06

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