TWI561673B - Thin film deposition apparatus - Google Patents

Thin film deposition apparatus

Info

Publication number
TWI561673B
TWI561673B TW104113808A TW104113808A TWI561673B TW I561673 B TWI561673 B TW I561673B TW 104113808 A TW104113808 A TW 104113808A TW 104113808 A TW104113808 A TW 104113808A TW I561673 B TWI561673 B TW I561673B
Authority
TW
Taiwan
Prior art keywords
thin film
deposition apparatus
film deposition
thin
film
Prior art date
Application number
TW104113808A
Other languages
Chinese (zh)
Other versions
TW201542869A (en
Inventor
Sang-Soo Hwang
Woo-Jin Lee
Joo-Il Ha
Ki-Jo Shin
Don-Hee Lee
Original Assignee
Tes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tes Co Ltd filed Critical Tes Co Ltd
Publication of TW201542869A publication Critical patent/TW201542869A/en
Application granted granted Critical
Publication of TWI561673B publication Critical patent/TWI561673B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW104113808A 2014-05-02 2015-04-30 Thin film deposition apparatus TWI561673B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140053197A KR101533610B1 (en) 2014-05-02 2014-05-02 Thin film deposition apparatus

Publications (2)

Publication Number Publication Date
TW201542869A TW201542869A (en) 2015-11-16
TWI561673B true TWI561673B (en) 2016-12-11

Family

ID=53789131

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104113808A TWI561673B (en) 2014-05-02 2015-04-30 Thin film deposition apparatus

Country Status (4)

Country Link
KR (1) KR101533610B1 (en)
CN (2) CN105018901B (en)
TW (1) TWI561673B (en)
WO (1) WO2015167114A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101533610B1 (en) * 2014-05-02 2015-07-06 주식회사 테스 Thin film deposition apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201229298A (en) * 2010-10-18 2012-07-16 Synos Technology Inc Deposition of layer using depositing apparatus with reciprocating susceptor
TW201239133A (en) * 2011-03-01 2012-10-01 Applied Materials Inc Apparatus and process for atomic layer deposition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080035735A (en) * 2006-10-20 2008-04-24 삼성전자주식회사 Equipment for plasma enhanced chemical vapor deposition
KR101099191B1 (en) * 2008-08-13 2011-12-27 시너스 테크놀리지, 인코포레이티드 Vapor deposition reactor and method for forming thin film using the same
KR101099735B1 (en) * 2008-08-21 2011-12-28 에이피시스템 주식회사 Substrate processing system and method
WO2011042949A1 (en) * 2009-10-05 2011-04-14 株式会社島津製作所 Surface wave plasma cvd device and film-forming method
KR101347046B1 (en) * 2013-02-04 2014-01-06 주식회사 테스 Thin film deposition apparatus
KR101533610B1 (en) * 2014-05-02 2015-07-06 주식회사 테스 Thin film deposition apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201229298A (en) * 2010-10-18 2012-07-16 Synos Technology Inc Deposition of layer using depositing apparatus with reciprocating susceptor
TW201239133A (en) * 2011-03-01 2012-10-01 Applied Materials Inc Apparatus and process for atomic layer deposition

Also Published As

Publication number Publication date
CN204714899U (en) 2015-10-21
TW201542869A (en) 2015-11-16
CN105018901B (en) 2017-11-28
KR101533610B1 (en) 2015-07-06
CN105018901A (en) 2015-11-04
WO2015167114A1 (en) 2015-11-05

Similar Documents

Publication Publication Date Title
GB201414110D0 (en) Thin film production
EP3136368A4 (en) External-environment-recognizing apparatus
EP3029092A4 (en) Coating film
EP3113594A4 (en) Parts-placing apparatus
SG10201504707WA (en) Alkyl-alkoxysilacyclic compounds and methods for depositing films using same
SG11201700854YA (en) Infrared-reflecting film
EP3209051A4 (en) Apparatus
HK1215694A1 (en) Thin film deposition method and deposition device
EP3122558A4 (en) Film
EP3101922A4 (en) Apparatus
PL3137646T3 (en) Sputtering apparatus
EP3381650A4 (en) Film forming device
HK1249768A1 (en) Film forming device
EP3165630A4 (en) Hard coating film
EP3173506A4 (en) Evaporation coating apparatus
EP3050702A4 (en) Coated film
GB2527804B (en) Droplet deposition apparatus
EP3015496A4 (en) Coating film
PL3184244T3 (en) Abrasive film
SG11201606347XA (en) Deposition apparatus
EP3272900A4 (en) Film forming device
SG11201704448RA (en) Method for the wet deposition of thin films
EP3104642A4 (en) Apparatus
SG11201701789PA (en) Sputtering apparatus
EP3136769A4 (en) Apparatus