TWI551046B - Magnetic sensor device - Google Patents
Magnetic sensor device Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/07—Hall effect devices
- G01R33/072—Constructional adaptation of the sensor to specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
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Description
本發明係關於將磁場強度轉換成電性訊號的磁性感測器裝置,例如關於利用於折疊式行動電話機或筆記型電腦等中之開關狀態檢測用感測器,或是馬達之旋轉位置檢測感測器等之磁性感測器裝置。 The present invention relates to a magnetic sensor device for converting a magnetic field strength into an electrical signal, for example, a sensor for detecting a switch state used in a foldable mobile phone or a notebook computer, or a sense of rotational position detection of a motor. A magnetic sensor device such as a detector.
就以摺疊式行動電話機或筆記型電腦等中之開關狀態檢測用感測器,或馬達之旋轉位置檢測感測器而言,使用有磁性感測器裝置(例如,參照專利文獻1)。 A magnetic sensor device is used for a sensor for detecting a switch state in a folding mobile phone or a notebook computer, or a rotary position detecting sensor for a motor (for example, refer to Patent Document 1).
磁性感測器裝置係藉由磁電轉換元件(例如霍耳元件)輸出與磁場強度或磁通密度呈比例之電壓,以放大器放大其輸出電壓,使用比較器而進行判定,以H訊號或L訊號之二值輸出。因磁電轉換元件之輸出電壓微小,故磁電轉換元件所持有之偏置電壓(元件偏置電壓),或放大器或比較器所持有之偏置電壓(輸入偏置電壓),或者轉換裝置內之雜訊成為問題。元件偏置電壓主要係磁電轉換元件藉由封裝體所受到之應力等而產生。輸入偏置電壓主要藉由構成放大器之輸入電路之元件的特性偏差等而產生。雜訊主要係藉由構成電路之單體電晶體所持有之閃爍雜音、單體電晶體或電阻元件所持有之熱雜音而產生。 The magnetic sensor device outputs a voltage proportional to the magnetic field strength or the magnetic flux density by a magnetoelectric conversion element (for example, a Hall element), amplifies the output voltage of the amplifier, and uses a comparator to determine the H signal or the L signal. The binary output. Since the output voltage of the magnetoelectric conversion element is small, the bias voltage (element bias voltage) held by the magnetoelectric conversion element, or the bias voltage (input bias voltage) held by the amplifier or the comparator, or the conversion device The noise is a problem. The component bias voltage is mainly generated by the magnetoelectric conversion element being subjected to stress or the like by the package. The input bias voltage is mainly generated by a characteristic deviation or the like of an element constituting an input circuit of the amplifier. The noise is mainly generated by the scintillation noise, the single crystal or the thermal noise held by the resistive element held by the single crystal of the circuit.
為了降低上述磁電轉換元件或放大器所持有之偏置電壓的影響,提案有第4圖所示之磁性感測器裝置。 In order to reduce the influence of the bias voltage held by the above-described magnetoelectric conversion element or amplifier, a magnetic sensor device shown in Fig. 4 has been proposed.
以往之磁性感測器裝置之構成為具有霍耳元件1、切換霍耳元件1之第一檢測狀態和第二檢測狀態的開關切換電路2、放大開關切換電路2之兩個輸出端子之電壓差(V1-V2)之差動放大器3、一端連接差動放大器3之一方之輸出端子的電容C1、被連接於差動放大器3之另一方之輸出端子和電容C1之另一端之間的開關S1、比較器4,和D型正反器D1。在此,第一檢測狀態係從端子A和C輸入電源電壓,並從端子B和D輸出檢測電壓。再者,第二檢測狀態係從端子B和D輸入電源電壓,並從端子A和C輸出檢測電壓。 The conventional magnetic sensor device is configured to have a Hall element 1, a switching switch circuit for switching the first detection state and the second detection state of the Hall element 1, and a voltage difference between the two output terminals of the amplification switch switching circuit 2. a differential amplifier 3 of (V1 - V2), a capacitor C1 having one end connected to one of the output terminals of the differential amplifier 3, and a switch S1 connected between the other output terminal of the differential amplifier 3 and the other end of the capacitor C1 , Comparator 4, and D-type flip-flop D1. Here, the first detection state is to input a power source voltage from the terminals A and C, and to output a detection voltage from the terminals B and D. Furthermore, the second detection state inputs the power supply voltage from the terminals B and D, and outputs the detection voltage from the terminals A and C.
將磁電轉換元件之差動輸出電壓設為Vh,將差動放大器之放大率設為G,將差動放大器之輸入偏置電壓設為Voa。在第一檢測狀態中,開關S1為ON,電容C1被充電Vc1=V3-V4=G(Vh1+Voa)。接著,在第二檢測狀態中,開關S1為OFF,輸出Vc2=V3-V4=G(-Vh2+Voa)。在此,成為V5-V6=V3-Vc1-V4=Vc2-Vc1=-G(Vh1+Vh2),輸入偏差電壓之影響被抵銷。再者,磁電轉換元件之檢測電壓Vh1和Vh2因一般持有同相之有效訊號成分和逆相之元件偏置成分,故上述之輸出電壓也去除元件偏置成分之影響。然後,在比較器進行被施加之磁場強度和基準電壓之比較,比較輸出結果被閂鎖。基準電壓在第4圖之時為磁電轉換元件中之同相電壓,能夠電路追加且任意設定。 The differential output voltage of the magnetoelectric conversion element is set to Vh, the amplification factor of the differential amplifier is set to G, and the input bias voltage of the differential amplifier is set to Voa. In the first detection state, the switch S1 is ON, and the capacitor C1 is charged Vc1=V3-V4=G(Vh1+Voa). Next, in the second detection state, the switch S1 is OFF, and the output Vc2 = V3 - V4 = G (-Vh2 + Voa). Here, V5-V6=V3-Vc1-V4=Vc2-Vc1=-G(Vh1+Vh2), and the influence of the input offset voltage is offset. Furthermore, since the detection voltages Vh1 and Vh2 of the magnetoelectric conversion element generally hold the in-phase effective signal component and the reverse phase component bias component, the above-mentioned output voltage also removes the influence of the component bias component. Then, the comparator compares the applied magnetic field strength with the reference voltage, and the comparison output is latched. The reference voltage is the in-phase voltage in the magnetoelectric conversion element at the time of Fig. 4, and can be added and arbitrarily set.
[專利文獻1]日本特開2001-337147號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-337147
但是,在以往之磁性感測器裝置中,無法完全抑制因感測器裝置內部之各構成元件發出之雜訊(閃爍雜音、熱雜音)或外來雜訊所造成之影響,有檢測或解除時之磁場強度產生偏差之課題。尤其,因在差動放大器3之輸入端子部產生之雜訊被放大,故成為主要原因。 However, in the conventional magnetic sensor device, it is impossible to completely suppress the influence of noise (flashing noise, thermal noise) or external noise emitted by each component inside the sensor device, and when detecting or releasing The problem of the deviation of the magnetic field strength. In particular, noise generated in the input terminal portion of the differential amplifier 3 is amplified, which is a cause.
本發明係為了解決上述般之課題而創作出,提供一種利用複數次重複磁場檢測之動作,進行該些判定結果之比對,抑制因雜訊所造成之影響且高精度檢測或解除磁場強度的磁性感測器裝置。並且,成為僅在自前次之檢測狀態有變化之時進行上述複數次比對之構成,抑制不必要之消耗電力。 The present invention has been devised to solve the above-mentioned problems, and provides an operation of detecting a plurality of repeated magnetic field detections, and performing comparison of the determination results to suppress the influence of noise and accurately detect or cancel the magnetic field strength. Magnetic sensor device. In addition, the above-described plurality of comparisons are performed only when the previous detection state changes, and unnecessary power consumption is suppressed.
為了解決以往般之問題點,本發明之磁性感測器裝置構成下述般。 In order to solve the conventional problems, the magnetic sensor device of the present invention is constructed as follows.
為一種因應被施加於磁電轉換元件之磁場強度而進行邏輯輸出的磁性感測器裝置,係由輸入放大磁電轉換元件之輸出的訊號,並輸出比較之結果的比較器,和對比較器之輸出訊號進行運算處理的邏輯電路所構成。邏輯電路僅於藉由磁場強度之變換而在邏輯輸出產生變化之時,進行 連續複數次之邏輯輸出的比對判定。 A magnetic sensor device for performing a logic output in response to the strength of a magnetic field applied to a magnetoelectric conversion element is a comparator that inputs a signal for amplifying the output of the magnetoelectric conversion element, and outputs a comparison result, and an output of the comparator The signal is composed of a logic circuit that performs arithmetic processing. The logic circuit only performs when the logic output changes due to the transformation of the magnetic field strength. The comparison of the logical outputs of successive multiple times.
若藉由本發明之磁性感測器裝置時,則可以抑制消耗電力,並降低由於裝置內部之各構成元件發出之雜訊或外來雜訊所產生之磁場強度之檢測或解除的判定偏差。再者,可以提供能以低消耗電流進行高精度之磁場強度之檢測或解除的磁性感測器裝置。 According to the magnetic sensor device of the present invention, it is possible to suppress power consumption and to reduce the variation in the detection or cancellation of the magnetic field intensity generated by the noise or external noise emitted from each component inside the device. Further, it is possible to provide a magnetic sensor device capable of detecting or canceling the magnetic field strength with high precision with a low current consumption.
本實施型態之磁性感測器裝置係作為折疊式行動電話機或筆記型電腦等中之開關狀態檢測感測器,或馬達之旋轉位置檢測感測器等,檢測磁場強度之狀態的感測器而被廣泛利用。在以下之實施型態中,雖然針對使用磁電轉換元件之磁性感測器裝置予以說明,但是本發明之轉換裝置亦可以使用因應加速度或壓力等而同樣進行電壓輸出之轉換元件,來取代因應磁場強度而進行電壓輸出之磁電轉換元件。 The magnetic sensor device of the present embodiment is a sensor for detecting the state of the magnetic field strength as a switch state detecting sensor in a folding mobile phone or a notebook computer, or a rotational position detecting sensor of a motor or the like. It is widely used. In the following embodiments, although the magnetic sensor device using the magnetoelectric conversion element is described, the conversion device of the present invention can also use a conversion element that performs voltage output in response to acceleration or pressure, etc., instead of the corresponding magnetic field. A magnetoelectric conversion element that performs voltage output with intensity.
第1圖為本實施型態之磁性感測器裝置之電路圖。本實施型態之磁性感測器裝置係由屬於磁電轉換元件之霍耳元件1、開關切換電路2、差動放大器3、比較器4、ON/OFF電路5、D型正反器D1、D2、D3、XOR電路X1、X2、選擇器電路SL1、SL2、AND電路AN1、OR電路OR1、電容C1、開關S1、輸出端子VOUT、ON/OFF訊 號源 E1、 E2所構成。霍耳元件1具有第一端子對A-C和第二端子對B-D。開關切換電路2具有與霍耳元件1之各端子A、B、C及D連接之四個輸入端子和第一輸出端子及第二輸出端子。差動放大器3具有第一輸入端子及第二輸入端子,和第一輸出端子及第二輸出端子。選擇器電路SL1、SL2具有輸入端子A和輸入端子B和選擇端子 S和輸出。 Fig. 1 is a circuit diagram of a magnetic sensor device of the present embodiment. The magnetic sensor device of the present embodiment is composed of a Hall element 1, a switching switching circuit 2, a differential amplifier 3, a comparator 4, an ON/OFF circuit 5, and a D-type flip-flop D1, D2 belonging to a magnetoelectric conversion element. , D3, XOR circuit X1, X2, selector circuit SL1, SL2, AND circuit AN1, OR circuit OR1, capacitor C1, switch S1, output terminal VOUT, ON/OFF signal source E1 E2 is composed. The Hall element 1 has a first terminal pair AC and a second terminal pair BD. The switch switching circuit 2 has four input terminals connected to the terminals A, B, C, and D of the hall element 1, and a first output terminal and a second output terminal. The differential amplifier 3 has a first input terminal and a second input terminal, and a first output terminal and a second output terminal. The selector circuits SL1, SL2 have an input terminal A and an input terminal B and a selection terminal S and output.
差動放大器3係第一輸出端子被連接於電容C1之一端,第二輸出端子被連接於開關S1之一端。比較器4係第一輸入被連接於電容C1之另一端及開關S1之另一端,第二輸入被連接於差動放大器3之第二輸出端子,輸出被連接於D型正反器D1和D型正反器D2。XOR電路X1係第一輸入被連接於D型正反器D1之輸出,第二輸入被連接於D型正反器D2之輸出,輸出被連接於選擇器電路SL1之選擇端子 S。XOR電路X2係第一輸入被連接於D型正反器D1之輸出和選擇器電路SL1之輸入端子A,第二輸入連接於選擇器電路SL1之輸入端子B和選擇器電路SL2之輸入端子A和D型正反器D3之輸出和輸出端子VOUT,輸出被連接於選擇器電路SL2之選擇端子 S和AND電路AN1之第一輸入。選擇器電路SL2係輸入端子B被連接於選擇器電路SL1之輸出端子,輸出端子被連接於D型正反器D3之輸入。AND電路AN1係第二輸入被連接於ON/OFF訊號源 E2,輸出被連接於OR電路OR1之第一輸入。OR電路OR1係第二輸入被連接於 ON/OFF訊號源 E1,輸出被連接於ON/OFF電路5。ON/OFF電路5係對開關切換電路2、差動放大器3、比較器4輸出 EN訊號。 The differential amplifier 3 is connected to one end of the capacitor C1, and the second output terminal is connected to one end of the switch S1. The comparator 4 is connected to the other end of the capacitor C1 and the other end of the switch S1, the second input is connected to the second output terminal of the differential amplifier 3, and the output is connected to the D-type flip-flops D1 and D. Type flip-flop D2. The first input of the XOR circuit X1 is connected to the output of the D-type flip-flop D1, the second input is connected to the output of the D-type flip-flop D2, and the output is connected to the selection terminal of the selector circuit SL1. S. The first input of the XOR circuit X2 is connected to the output of the D-type flip-flop D1 and the input terminal A of the selector circuit SL1, and the second input is connected to the input terminal B of the selector circuit SL1 and the input terminal A of the selector circuit SL2. And the output and output terminal VOUT of the D-type flip-flop D3, the output is connected to the selection terminal of the selector circuit SL2 The first input of the S and AND circuit AN1. The selector circuit SL2 is connected to the input terminal of the selector circuit SL1 and the output terminal is connected to the input of the D-type flip-flop D3. The AND circuit AN1 is connected to the second input and is connected to the ON/OFF signal source. E2, the output is connected to the first input of the OR circuit OR1. OR circuit OR1 is the second input connected to the ON/OFF signal source E1, the output is connected to the ON/OFF circuit 5. The ON/OFF circuit 5 is connected to the switch switching circuit 2, the differential amplifier 3, and the comparator 4 EN signal.
第5圖表示選擇器電路SL1及SL2之電路圖之一例。選擇器電路係由構成傳輸閘TM1之PMOS電晶體501及NMOS電晶體502,和構成傳輸閘TM2之PMOS電晶體503及NMOS電晶體504和反相器I1、I2所構成。關於連接,選擇端子 S被連接於反相器I1之輸入,反相器I1之輸出被連接於反相器I2之輸入和NMOS電晶體502之閘極和PMOS電晶體503之閘極。反相器I2之輸出係被連接於PMOS電晶體501之閘極和NMOS電晶體504之閘極。PMOS電晶體501係汲極被連接於輸入端子A及NMOS電晶體502之汲極,源極被連接於輸出端子及NMOS電晶體502之源極。PMOS電晶體503係汲極被連接於輸入端子B及NMOS電晶體504之汲極,源極被連接於輸出端子及NMOS電晶體502之源極。利用由來自選擇端子 S之H/L輸入訊號控制兩個傳輸閘TM1及TM2之ON/OFF,發揮將輸入端子A或輸入端子B之任一方的訊號傳達至輸出端子之作用。 Fig. 5 shows an example of a circuit diagram of the selector circuits SL1 and SL2. The selector circuit is composed of a PMOS transistor 501 and an NMOS transistor 502 constituting the transfer gate TM1, and a PMOS transistor 503 and an NMOS transistor 504 and inverters I1 and I2 constituting the transfer gate TM2. About the connection, select the terminal S is coupled to the input of inverter I1, and the output of inverter I1 is coupled to the input of inverter I2 and the gate of NMOS transistor 502 and the gate of PMOS transistor 503. The output of inverter I2 is coupled to the gate of PMOS transistor 501 and the gate of NMOS transistor 504. The PMOS transistor 501 is connected to the drain of the input terminal A and the NMOS transistor 502, and the source is connected to the output terminal and the source of the NMOS transistor 502. The PMOS transistor 503 is connected to the drain of the input terminal B and the NMOS transistor 504, and the source is connected to the output terminal and the source of the NMOS transistor 502. Utilizing from the selection terminal The H/L input signal of S controls the ON/OFF of the two transfer gates TM1 and TM2, and functions to transmit either one of the input terminal A or the input terminal B to the output terminal.
第6圖表示差動放大器3之電路圖之一例。差動放大器3一般設為測量放大器構成。差動放大器3具備有差動放大器11、12和電阻R11、R12、R13。關於連接,差動放大器11係非反轉輸入端子被連接於第一輸入端子,反轉輸入端子被連接於電阻R11之一方之端子和電阻R12 之一方之端子之連接點,輸出被連接於第一輸出端子和電阻R11之另一方之端子。差動放大器12係非反轉輸入端子被連接於第二輸入端子,反轉輸入端子被連接於電阻R13之一方之端子和電阻R12之另一方之端子之連接點,輸出被連接於第二輸出端子和電阻R13之另一方之端子。差動放大器3係藉由設成如此之測量放大器構成,而能夠抑制差動輸入中之同相雜訊的影響。 Fig. 6 shows an example of a circuit diagram of the differential amplifier 3. The differential amplifier 3 is generally configured as a measuring amplifier. The differential amplifier 3 is provided with differential amplifiers 11 and 12 and resistors R11, R12, and R13. Regarding the connection, the differential amplifier 11 is connected to the first input terminal by the non-inverting input terminal, and the inverting input terminal is connected to one of the terminals of the resistor R11 and the resistor R12. The connection point of one of the terminals is connected to the first output terminal and the other terminal of the resistor R11. The differential amplifier 12 is connected to the second input terminal by a non-inverting input terminal, and the inverting input terminal is connected to a connection point of one of the terminals of the resistor R13 and the other terminal of the resistor R12, and the output is connected to the second output. Terminal and the other terminal of resistor R13. The differential amplifier 3 is configured by such a measuring amplifier, and can suppress the influence of the in-phase noise in the differential input.
開關切換電路2具有切換對霍耳元件1之第一端子對A-C輸入電源電壓,並從霍耳元件1之第二端子對B-D輸出檢測電壓的第一檢測狀態,和對第二端子對B-D輸入電源電壓,並從第一端子對A-C輸出檢測電壓的第二檢測狀態的功能。 The switch switching circuit 2 has a first detection state for switching the first terminal pair AC input power supply voltage of the hall element 1, and outputting a detection voltage from the second terminal pair BD of the hall element 1, and inputting the second terminal pair BD The power supply voltage and the function of detecting the second detection state of the voltage from the first terminal to the AC output.
接著,針對本實施型態之磁性感測器裝置之動作予以說明。第2圖為本實施型態之磁性感測器裝置中之控制訊號等之時序圖。在此, Dm係表示被輸入至第m的D型正反器Dm的閂鎖用之時脈訊號。再者,雖無特別記載,但是D型正反器係於從L訊號升起至H訊號之時,進行輸入資料之閂鎖。 Next, the operation of the magnetic sensor device of the present embodiment will be described. Fig. 2 is a timing chart of control signals and the like in the magnetic sensor device of the present embodiment. here, Dm is a clock signal for latching input to the mth D-type flip-flop Dm. Further, although not specifically described, the D-type flip-flop is latched by the input data when it is raised from the L signal to the H signal.
檢測動作之一周期T係藉由上述開關切換電路2之動作,被區分成第一檢測狀態T1和第二檢測狀態T2。再者,檢測動作之一周期T係藉由開關S1之開關被區分成樣品相F1和比較相F2。樣品相F1係將霍耳元件1、差動放大器3之偏置成分記憶於電容C1。比較相F2係進行因應磁場強度而決定之電壓和檢測電壓位準的比較。在此, 將磁電轉換元件之差動輸出電壓設為Vh,將差動放大器之放大率設為G,將差動放大器之輸入偏置電壓設為Voa。 One of the detection operations T is divided into a first detection state T1 and a second detection state T2 by the operation of the above-described switching switching circuit 2. Further, one period T of the detection operation is divided into the sample phase F1 and the comparison phase F2 by the switch of the switch S1. The sample phase F1 memorizes the bias components of the Hall element 1 and the differential amplifier 3 in the capacitor C1. The comparison phase F2 is a comparison of the voltage determined by the strength of the magnetic field and the level of the detection voltage. here, The differential output voltage of the magnetoelectric conversion element is set to Vh, the amplification factor of the differential amplifier is set to G, and the input bias voltage of the differential amplifier is set to Voa.
在樣品相F1中,霍耳元件1成為第一檢測狀態T1,開關S1為ON。由於S1為ON,電容C1則被充電Vc1=(V3-V4)=G(Vh1+Voa)...(1)接著,在比較相F2(第二檢測狀態T2)中,開關S1為OFF,輸出Vc2=(V3-V4)=G(-Vh2+Voa)...(2)在此,成為V5-V6=V3-Vc1-V4=Vc2-Vc1=-G(Vh1+Vh2)...(3)輸入偏置電壓之影響被抵銷。再者,磁電轉換元件之檢測電壓Vh1和Vh2因一般持有同相之有效訊號成分和逆相之元件偏置成分,故上述之輸出電壓也去除元件偏置成分之影響。 In the sample phase F1, the Hall element 1 becomes the first detection state T1, and the switch S1 is ON. Since S1 is ON, capacitor C1 is charged Vc1=(V3-V4)=G(Vh1+Voa). . . (1) Next, in the comparison phase F2 (second detection state T2), the switch S1 is OFF, and the output Vc2 = (V3 - V4) = G (-Vh2 + Voa). . . (2) Here, it becomes V5-V6=V3-Vc1-V4=Vc2-Vc1=-G(Vh1+Vh2). . . (3) The effect of the input bias voltage is offset. Furthermore, since the detection voltages Vh1 and Vh2 of the magnetoelectric conversion element generally hold the in-phase effective signal component and the reverse phase component bias component, the above-mentioned output voltage also removes the influence of the component bias component.
然後,在比較相F2中,在式(3)中所示之施加磁場強度之檢測電壓成分在比較器4中與基準電壓比較,輸出訊號V7(H訊號(VDD)或L訊號(GND))被輸出。 Then, in the comparison phase F2, the detected voltage component of the applied magnetic field strength shown in the equation (3) is compared with the reference voltage in the comparator 4, and the output signal V7 (H signal (VDD) or L signal (GND)) is output. Is output.
在此,本實施例之時之基準電壓為磁電轉換元件中之同相電壓。再者,基準電壓可追加電路且任意設定。 Here, the reference voltage at the time of this embodiment is the in-phase voltage in the magnetoelectric conversion element. Furthermore, the reference voltage can be added to the circuit and set arbitrarily.
比較器4之輸出的訊號V7被輸入至以下詳細說明之邏輯電路。比較器4之輸出的訊號V7藉由兩個D型正反器D1及D2,在不同之時序被兩次閂鎖。第二次之閂鎖係於連續之再檢測動作中,即是第一次之閂鎖之一檢測周期T後進行。然後,藉由連接該些兩個輸出之XOR電路X1,僅於該些兩個輸出值成為相同之時,通過選擇器電路SL1,比較器之輸出訊號被輸入至選擇器電路SL2。相反地,若D型正反器D1及D2之二輸出之值不同時,被保持於D型正反器D3之前檢測時的輸出結果原樣地被輸入至選擇器電路SL2。即是,除了如T般之時間外只要相同的檢測(解除)狀態不繼續,檢測或解除之判定就不會被進行,可以防止瞬間性之雜訊的影響的錯誤檢測、錯誤解除。 The signal V7 of the output of the comparator 4 is input to the logic circuit described in detail below. The signal V7 of the output of the comparator 4 is latched twice at different timings by the two D-type flip-flops D1 and D2. The second latch is engaged in a continuous re-detection action, that is, after one of the first latches is detected for a period T. Then, by connecting the two output XOR circuits X1, the output signals of the comparators are input to the selector circuit SL2 through the selector circuit SL1 only when the two output values become the same. On the other hand, when the values of the two outputs of the D-type flip-flops D1 and D2 are different, the output result when the D-type flip-flop D3 is held before being detected is input to the selector circuit SL2 as it is. In other words, the detection or release determination is not performed as long as the same detection (release) state is not continued except for the time T, and the error detection and error cancellation of the influence of the instantaneous noise can be prevented.
接著,藉由被保持於D型正反器D3之前檢測時中之輸出結果和連接D型正反器D1之輸出的XOR電路X2,僅於該些兩個輸出值不同之時,通過選擇器電路SL2,選擇器電路SL1之輸出訊號被輸入至D型正反器D3,最終在 D3之時序被閂鎖。相反地,若被輸入至XOR電路X2之兩個輸出值相同時,被保持於D型正反器D3之前檢測時之輸出結果原樣地被輸入至D型正反器D3,並被閂鎖。再者,XOR電路X2之輸出和ON/OFF訊號 E2被輸入至AND電路AN1,僅在被輸入至XOR電路X2之兩 個輸出值不同之時,ON/OFF訊號 E2經AND電路AN1被輸入至OR電路OR1。然後,以OR電路OR1調合ON/OFF訊號 E1和ON/OFF訊號 E2,當作 EN訊號被輸出。另外,被輸入至XOR電路X2之兩個輸出值為相同之時,因AND電路AN1之輸出被固定於L訊號,故ON/OFF訊號 E1原樣地當作 EN訊號從OR電路OR1被輸出。 Then, by the output result of the detection before being held in the D-type flip-flop D3 and the XOR circuit X2 connecting the output of the D-type flip-flop D1, only the two output values are different, and the selector is passed. In the circuit SL2, the output signal of the selector circuit SL1 is input to the D-type flip-flop D3, and finally The timing of D3 is latched. Conversely, if the two output values input to the XOR circuit X2 are the same, the output result detected before being held by the D-type flip-flop D3 is input to the D-type flip-flop D3 as it is, and is latched. Furthermore, the output of the XOR circuit X2 and the ON/OFF signal E2 is input to the AND circuit AN1, and the ON/OFF signal is only generated when the two output values input to the XOR circuit X2 are different. E2 is input to the OR circuit OR1 via the AND circuit AN1. Then, the ON/OFF signal is adjusted by the OR circuit OR1. E1 and ON/OFF signals E2, as The EN signal is output. In addition, when the two output values input to the XOR circuit X2 are the same, since the output of the AND circuit AN1 is fixed to the L signal, the ON/OFF signal E1 is treated as it is The EN signal is output from the OR circuit OR1.
即是,若第一次之閂鎖結果和前檢測結果不同時,進行第二次判定,藉由第一次和第二次之結果的比對,決定檢測結果。此時,消耗二檢測周期分(2T)之電力。相反地,若第一次閂鎖結果和前檢測結果相同時,不進行第二次之判定,也中止差動放大器等之訊號處理的電路的電流。此時,可以刪減一檢測周期T分之消耗電力。並且,即使第一次之閂鎖結果和前檢測結果不同之時,第一次之閂鎖結果和第二次之閂鎖結果不同之時,因第一次之判定無效,故雖然檢測結果VOUT不變化,但消耗二檢測周期分(2T)之電力。 That is, if the first latching result is different from the previous detection result, the second determination is made, and the detection result is determined by the comparison of the first and second results. At this time, the power of two detection periods (2T) is consumed. Conversely, if the first latch result is the same as the previous detection result, the current of the circuit for the signal processing such as the differential amplifier is also stopped without performing the second determination. At this time, the power consumption of one detection period T can be reduced. Moreover, even if the first latch result and the previous detection result are different, when the first latch result and the second latch result are different, the first judgment is invalid, so the detection result is VOUT. Does not change, but consumes two detection cycles (2T) of power.
藉由上述,能夠抑制因感測器裝置內部或來自外部之雜訊在磁場強度之檢測或解除之判定結果產生之偏差,並且將消耗電力抑制成所需之最低限。 According to the above, it is possible to suppress variations in the detection result of the detection or release of the magnetic field strength due to noise inside or outside the sensor device, and to suppress the power consumption to the required minimum limit.
再者,如第3圖所示般,即使在兩極檢測用途中亦可應用本發眀。在此,兩極檢測係於以S極或N極中之任一極性進行檢測或解除之判定之時輸出邏輯反轉者。在本發明中,例如以S極進行檢測或解除之判定時,於通常之 S極、N極兩判定後再次進行S極判定,兩次之判定結果若為相同,輸出邏輯則反轉。此時,不進行第二次之N極判定。相反的,以N極進行檢測或解除之判定時也相同,於通常之S極、N極兩判定後再次進行N極判定,兩次之判定結果若為相同,輸出邏輯則反轉。此時,不進行第二次之S極判定。如此一來,藉由僅對進行檢測或解除之判定時被判定出之極性側,進行再判定,可以實現高精度之磁場強度之檢測並且消耗電力的抑制。 Furthermore, as shown in Fig. 3, the present invention can be applied even in the application of the two-pole detection. Here, the two-pole detection is to output a logic inversion when the detection or cancellation of any of the S poles or the N poles is performed. In the present invention, for example, when the S pole is used for detecting or releasing the determination, in the usual case After the S-pole and the N-pole are determined, the S-pole determination is performed again. If the result of the two determinations is the same, the output logic is inverted. At this time, the second N-pole determination is not performed. Conversely, the same is true for the detection or cancellation of the N-pole. The N-pole determination is performed again after the normal S-pole and N-pole determinations. If the two determination results are the same, the output logic is inverted. At this time, the second-order S-pole determination is not performed. In this way, by performing the re-judgment only on the polarity side determined when the detection or the cancellation is performed, it is possible to detect the magnetic field strength with high precision and suppress the power consumption.
並且,在本實施型態中,雖然將連接比較器4之輸出的D型正反器設為兩個而予以說明,但是D型正反器即使為三個以上亦可。此時,只要該些輸出所有值不齊全,就保持前檢測結果。若增加如此地被並聯連接之D型正反器之數量越多,越能抑制雜訊之影響力。 Further, in the present embodiment, the D-type flip-flops that connect the outputs of the comparators 4 are described as two, but the D-type flip-flops may be three or more. At this time, as long as all the values of the outputs are not complete, the previous detection result is maintained. If the number of D-type flip-flops connected in parallel is increased, the influence of noise can be suppressed.
再者,在本實施型態所示之磁性感測器裝置中,雖然將從霍耳元件1至比較器4為止之電路設為第1圖般之構成而進行說明,但是並不限定於該電路構成。例如,就以在比較器4被比較之基準電壓而言,即使為從另外設置之基準電壓電路供給任意之電壓的構成亦可。 In the magnetic sensor device of the present embodiment, the circuit from the Hall element 1 to the comparator 4 is configured as shown in the first figure, but the present invention is not limited thereto. Circuit composition. For example, the reference voltage to be compared by the comparator 4 may be configured to supply an arbitrary voltage from a separately provided reference voltage circuit.
並且,本發眀中之磁性感測器裝置亦可以使用於交變檢測(例如馬達之旋轉檢測)用途。從交變檢測係從進行僅一方(例如S極)之極性的檢測之狀態,當其一方之極性被檢測時,則切換至進行僅另一方(N極)之極性的檢測之狀態的磁性感測裝置。 Moreover, the magnetic sensor device of the present invention can also be used for alternating detection (for example, rotation detection of a motor). When the polarity of one of the detections is detected from the alternating detection system, when one of the polarities is detected, the magnetic resonance is switched to the state in which the polarity of only the other (N pole) is detected. Measuring device.
再者,在第2圖之時序圖中,即使為不設置位於檢測 周期T和檢測周期T之間的待機期間的驅動方法之時,亦可取得相同之效果。 Furthermore, in the timing chart of Fig. 2, even if it is not set to detect The same effect can be obtained when the driving method in the standby period between the period T and the detection period T is performed.
1‧‧‧霍耳元件 1‧‧‧Horse components
2‧‧‧開關切換電路 2‧‧‧Switching circuit
3‧‧‧差動放大器 3‧‧‧Differential Amplifier
4‧‧‧比較器 4‧‧‧ comparator
5‧‧‧ON/OFF電路 5‧‧‧ON/OFF circuit
11、12‧‧‧差動放大器 11, 12‧‧‧Differential Amplifier
AN1‧‧‧AND電路 AN1‧‧‧AND circuit
OR1‧‧‧OR電路 OR1‧‧‧OR circuit
X1、X2‧‧‧電路XOR X1, X2‧‧‧ Circuit XOR
D1、D2、D3‧‧‧D型正反器 D1, D2, D3‧‧‧D type flip-flops
SL1、SL2‧‧‧選擇器電路 SL1, SL2‧‧‧ selector circuit
TM1、TM2‧‧‧傳輸閘 TM1, TM2‧‧‧ transmission gate
第1圖為表示本實施型態之磁性感測器裝置的電路圖。 Fig. 1 is a circuit diagram showing a magnetic sensor device of the present embodiment.
第2圖為本實施型態之磁性感測器裝置之時序圖。 Fig. 2 is a timing chart of the magnetic sensor device of the present embodiment.
第3圖為本實施型態之磁性感測器裝置之應用例之時序圖。 Fig. 3 is a timing chart showing an application example of the magnetic sensor device of the present embodiment.
第4圖為以往之磁性感測器裝置之電路圖。 Fig. 4 is a circuit diagram of a conventional magnetic sensor device.
第5圖為表示選擇器電路之一例的電路圖。 Fig. 5 is a circuit diagram showing an example of a selector circuit.
第6圖為表示差動放大器之一例的電路圖。 Fig. 6 is a circuit diagram showing an example of a differential amplifier.
1‧‧‧霍耳元件 1‧‧‧Horse components
2‧‧‧開關切換電路 2‧‧‧Switching circuit
3‧‧‧差動放大器 3‧‧‧Differential Amplifier
4‧‧‧比較器 4‧‧‧ comparator
5‧‧‧ON/OFF電路 5‧‧‧ON/OFF circuit
AN1‧‧‧AND電路 AN1‧‧‧AND circuit
OR1‧‧‧OR電路 OR1‧‧‧OR circuit
X1、X2‧‧‧電路XOR X1, X2‧‧‧ Circuit XOR
D1、D2、D3‧‧‧D型正反器 D1, D2, D3‧‧‧D type flip-flops
SL1、SL2‧‧‧選擇器電路 SL1, SL2‧‧‧ selector circuit
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JP2013074415A (en) | 2013-04-22 |
US20130076350A1 (en) | 2013-03-28 |
KR101877997B1 (en) | 2018-07-13 |
JP5736288B2 (en) | 2015-06-17 |
US8866474B2 (en) | 2014-10-21 |
CN103018686A (en) | 2013-04-03 |
KR20130033978A (en) | 2013-04-04 |
TW201332287A (en) | 2013-08-01 |
CN103018686B (en) | 2016-08-10 |
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