TWI550916B - Illumination apparatus - Google Patents

Description

照明裝置 Lighting device

本發明是有關於一種用於一般照明的電燈結構，特別是指一種改良型發光二極體(LED)照明裝置，包含一發光二極體陣列，其具有多數於其上方配置有螢光材料的發光二極體以改善顯色性(color rendering)、混色性，及照明裝置的色溫控制程度。 The present invention relates to a lamp structure for general illumination, and more particularly to an improved light-emitting diode (LED) illumination device comprising an array of light-emitting diodes having a plurality of phosphor materials disposed thereon. Light-emitting diodes to improve color rendering, color mixing, and color temperature control of lighting devices.

為了使發光二極體照明燈替代傳統光源的效果令人滿意，其被期望要具有產生類似於白熾燈泡所發出之白光的特性，甚或是必須精確地複製出自然光。對於發光裝置而言，能產生具有良好控制參數的高品質光更是特別地重要，例如可產生用於專業攝影、錄像，及電影工業的光。為了達到前述要求，發光二極體照明燈或發光設備在特定色溫時，應具有與白熾燈泡或自然光之光譜響應相仿之光譜響應(spectral response)或特性。發光二極體照明燈及特定光源的光譜特性都可以藉由作為波長函數的發光頻譜圖(spectral plot of light emission)之形式來表示，且也可藉由包括色溫(CCT)、色調(hue，其可藉由CIE圖量化)、顯色指數(CRI)之相關量測值表示。 In order to make the effect of the light-emitting diode illumination lamp replacing the conventional light source satisfactory, it is expected to have characteristics similar to white light emitted by an incandescent light bulb, or even to accurately reproduce natural light. For illuminating devices, it is particularly important to be able to produce high quality light with good control parameters, such as light for professional photography, video, and the film industry. In order to meet the aforementioned requirements, a light-emitting diode illuminator or illuminating device should have a spectral response or characteristic similar to that of an incandescent light bulb or natural light at a particular color temperature. The spectral characteristics of the LED illumination lamp and the specific light source can be expressed in the form of a spectral plot of light emission, and can also include color temperature (CCT), hue (hue, It can be expressed by the correlation measurement of CIE map and color rendering index (CRI).

簡單來說，發光裝置或燈泡的色溫指的是黑體輻射的色溫，其最貼近人體所感受之來自燈泡的光的色彩，且通常以「K(Kelvin)」度表示。實際上，其主要適於白光光源。一個典型白熾燈泡的色溫範圍在2500-3000K之間，且通常稱作「暖白光」。具有高色溫值的照明燈可被稱為「冷白光」。太陽光的色溫範圍為5000-6500K，並根據一天中的量測時間、太陽自地平線的高度，及太陽受遮蔽的程度而定。基於應用領域，對於發光二極體照明燈的性質而言，具有定義佳且受控制的色溫是被期待的，其色溫範圍應在2500-6500K之間，或甚至更高的色溫。發光二極體照明燈也可經由有限的色溫設定參數或經由持續變化的控制，提供各種可變的色溫。 In simple terms, the color temperature of a light-emitting device or bulb refers to the color temperature of the black body radiation, which is closest to the color of the light from the bulb perceived by the human body, and is usually expressed in degrees of "K (Kelvin)". In fact, it is mainly suitable for white light sources. A typical incandescent bulb has a color temperature range of 2500-3000K and is commonly referred to as "warm white light." An illuminating lamp having a high color temperature value may be referred to as "cold white light". The color temperature of sunlight ranges from 5000 to 6500 K, depending on the time of day, the height of the sun from the horizon, and the extent to which the sun is obscured. Based on the field of application, a well-defined and controlled color temperature is expected for the properties of a light-emitting diode lamp, and its color temperature range should be between 2500-6500K, or even a higher color temperature. Light-emitting diode illuminators can also provide a variety of variable color temperatures via limited color temperature setting parameters or via continuously varying controls.

顯色指數(CRI)提供一與理想光源或自然光源做比較的情況下所量測光源能力的量化數值，以忠實地再現被照物體的顏色。為了有效地做比較，受測光源及參考光源必須為相同的色溫。當受測光源高於5000K時，日光被作為參考光源；當受測光源低於5000K時，則以相同色溫之理想黑體輻射作為參考光源。顯色指數之量測的詳細敘述不屬於本發明說明的範圍。然而，當透過受測光源及參考光源照射時，基本量測過程由量測反射自試色樣本系列的光所組成。實際上，市售可見光光譜儀所提供的軟體可計算光源的顯色指數。原則上，自然光的顯色指數為100，以理想黑體輻射所發出的光的顯色指數亦即為100。 The color rendering index (CRI) provides a quantified value of the measured light source capability in the case of comparison with an ideal or natural light source to faithfully reproduce the color of the illuminated object. In order to make an effective comparison, the measured light source and the reference light source must have the same color temperature. When the measured light source is higher than 5000K, sunlight is used as the reference light source; when the measured light source is lower than 5000K, the ideal black body radiation of the same color temperature is used as the reference light source. The detailed description of the measurement of the color rendering index is not within the scope of the description of the invention. However, when irradiated through the light source under test and the reference light source, the basic measurement process consists of measuring the light reflected from the series of test color samples. In fact, the software provided by commercially available visible light spectrometers can calculate the color rendering index of the light source. In principle, the natural light has a color rendering index of 100, and the color rendering index of light emitted by ideal blackbody radiation is 100.

透過CIE坐標圖也可量化光的色調。採用不同色溫值之理想黑體輻射的色彩坐標值，在CIE圖上以弧形線段表示。然而，重要的是，光源的色彩坐標值不提供任何光源之顯色指數的表示意義。 The hue of the light can also be quantified through the CIE graph. The color coordinate values of the ideal blackbody radiation using different color temperature values are represented by curved line segments on the CIE map. However, it is important that the color coordinate values of the light source do not provide a representation of the color rendering index of any of the light sources.

目前，製造用於一般照明目的之白光的發光二極體照明燈面臨二個重大的挑戰。發光二極體照明燈應提供預定色溫的光，一般是根據其所應用的目的，在2500-6500K的範圍間，且在CIE圖上非常接近黑體輻射的曲線。此處所稱之「非常接近」所代表的意義將在之後解釋。發光二極體照明燈應達到接近100之高顯色指數，此特性對於應用於專業攝影、錄影，及電影工業更是特別重要。雖然，藉由混合紅光、綠光及藍光發光二極體的方式易於提供任何預定色溫，然而，紅綠藍發光二極體(RGB LEDs)的顯色性卻很差，其顯色指數僅有70，甚或是低於70。這是由於實際上RGB LEDs的各個發光二極體的發光顏色具有很窄的發光頻帶(bandwidth emission)，其最大半高寬(full width at half maximum，FWHM)頻帶僅有25-30nm的緣故。例如，由於RGB LEDs缺乏黃色範圍的光，故未能準確地提供反射大量黃光波長的受測物品。即使增加琥珀色發光二極體，波長範圍為550-590nm的發光效率仍然非常低，而為「死域(dead zone)」，就算使用多數個波長相異之發光二極體，顯色指數值仍難以達到92以上。 At present, the manufacture of light-emitting diode lamps for white light for general illumination purposes faces two major challenges. The light-emitting diode illuminator should provide light of a predetermined color temperature, generally in the range of 2500-6500K depending on the purpose for which it is applied, and is very close to the curve of blackbody radiation on the CIE diagram. The meaning of what is referred to here as "very close" will be explained later. Light-emitting diode lamps should achieve a color rendering index close to 100. This feature is especially important for professional photography, video, and film industries. Although it is easy to provide any predetermined color temperature by mixing red, green, and blue light-emitting diodes, the color rendering properties of red, green, and blue light-emitting diodes (RGB LEDs) are poor, and the color rendering index is only There are 70 or even less than 70. This is because the illuminating colors of the respective illuminating diodes of the RGB LEDs have a very narrow bandwidth emission, and the full width at half maximum (FWHM) band is only 25-30 nm. For example, since RGB LEDs lack light in the yellow range, it is not possible to accurately provide an object to be measured that reflects a large amount of yellow light wavelength. Even if the amber light-emitting diode is added, the luminous efficiency in the wavelength range of 550-590 nm is still very low, and it is a "dead zone", even if a plurality of light-emitting diodes having different wavelengths are used, the color rendering index value is used. Still difficult to reach 92 or more.

使一個發光二極體照明燈達到良好顯色性最常 見的方式是於藍光發光二極體上塗佈一層螢光材料，以吸收來自藍光發光二極體的光，並轉換此光能成為具有更高波長且寬廣頻譜的光，通常是轉換成於可見光頻譜中之黃光域的光譜峰值。在本說明中，更高波長及更長波長具有相同的意義，且可交互使用。典型的螢光材料具有50-160nm之最大半高寬頻帶，因此能較未塗覆有螢光材料之發光二極體提供更好的光譜。該方法可提供良好的顯色性，並具有固定的色溫。然而該方法卻難以準確地控制色溫，導致所構成之照明裝置可能難以發出低色溫的光，例如「暖白光」。為了解決上述問題，某些習知技術是增加紅光發光二極體以暖化所輸出光的方式，進而提供有效變化照明燈之色溫的能力。當紅光發光二極體的增加提供控制色溫的優點時，增加紅光發光二極體之窄光譜頻帶卻限制了顯色性的表現，且實際上增加紅光二極體確實減少了輸出光的顯色指數。該照明燈的顯色指數主要以塗佈螢光材料之藍光發光二極體之光譜特性決定。 Making a light-emitting diode illumination the most common color rendering The method is to apply a layer of fluorescent material on the blue light emitting diode to absorb the light from the blue light emitting diode, and convert the light into a light having a higher wavelength and a wider spectrum, which is usually converted into The spectral peak of the yellow light domain in the visible light spectrum. In this description, higher wavelengths and longer wavelengths have the same meaning and can be used interchangeably. A typical phosphor material has a maximum half-height wide band of 50-160 nm, and thus provides a better spectrum than a light-emitting diode that is not coated with a phosphor material. This method provides good color rendering and has a fixed color temperature. However, this method is difficult to accurately control the color temperature, resulting in a lighting device that may be difficult to emit light of a low color temperature, such as "warm white light." In order to solve the above problems, some conventional techniques are to increase the red light emitting diode to warm the output light, thereby providing the ability to effectively change the color temperature of the illumination lamp. When the increase of the red light emitting diode provides the advantage of controlling the color temperature, increasing the narrow spectral band of the red light emitting diode limits the performance of color rendering, and actually increasing the red light diode does reduce the output light. Color rendering index. The color rendering index of the illuminating lamp is mainly determined by the spectral characteristics of the blue light emitting diode coated with the fluorescent material.

一光源的顯色指數是提供該光源之光品質的量化測試值，以準確地表示顏色及發光物品之外在表現能力。對應用於專業攝影、錄影及電影工業，達到理想值100之高顯色指數值的光源需求是重要的。除此之外，光源的色溫及色調必須被嚴格地控制，較佳地，還需具備調整及改變光源之色溫的能力。 The color rendering index of a light source is a quantitative test value that provides the light quality of the light source to accurately represent the color and the ability to perform outside of the luminescent article. For the professional photography, video and film industries, the need for a light source that achieves a high color rendering index value of 100 is important. In addition, the color temperature and hue of the light source must be strictly controlled. Preferably, the ability to adjust and change the color temperature of the light source is also required.

圖1表示一近似於可見光且光波長範圍在400-700nm區域之理想黑體輻射的光譜，並具有各種不同 的色溫。 Figure 1 shows a spectrum of ideal blackbody radiation that approximates visible light and has a wavelength in the wavelength range of 400-700 nm, and has various Color temperature.

從圖1可以得知，該理想黑體輻射之光譜響應是色溫的函數。當未計算顯色指數時，若一光源的光譜響應的色溫非常近似於該理想黑體輻射的色溫時，將可達到非常高的顯色指數。因此，由圖1即可知，在不同的色溫值下，高品質光源的目標光譜響應圖曲線(即黑體輻射曲線)。 As can be seen from Figure 1, the spectral response of the ideal blackbody radiation is a function of color temperature. When the color rendering index is not calculated, a very high color rendering index can be achieved if the color temperature of the spectral response of a light source is very close to the color temperature of the ideal blackbody radiation. Therefore, as can be seen from Fig. 1, the target spectral response curve of the high-quality light source (i.e., the black body radiation curve) at different color temperature values.

參閱圖2，藉由混和紅光、綠光及藍光發光二極體所發出的光可創造幾乎任一可見光的色彩或色調，包括白光，從而可仿效在黑體輻射所表示出之相同的色溫值。圖2表示習知技術之具有色溫值為4500K之RGB LED光源的光譜圖，並表示藉由藍光201、綠光202，及紅光203發光二極體所提供之窄頻帶頻譜波峰，而光譜204為色溫值同為4500K之黑體輻射光譜。 Referring to Figure 2, by blending the light emitted by the red, green, and blue light-emitting diodes, the color or hue of almost any visible light, including white light, can be simulated, thereby emulating the same color temperature values as indicated by blackbody radiation. . 2 shows a spectral diagram of a conventional RGB LED light source having a color temperature value of 4500K, and shows a narrow band spectral peak provided by the blue light 201, the green light 202, and the red light 203 light emitting diode, and the spectrum 204 It is a black body radiation spectrum with a color temperature value of 4500K.

配合參閱圖3，圖3所示CIE圖表示該RGB LED光源的色彩坐標值(或稱CIE坐標值)，並表示其落在該理想黑體輻射的曲線上。圖式中的三角形表示該RGB LED光源可能具備之全色彩或色調域。該圖中的曲線表示該黑體輻射於不同色溫時所連成的曲線，且該點表示該黑體輻射在色溫為4500K時的CIE坐標。藉由適當地調整RGB LED所輸出光的比例，其所發出的光的CIE坐標值可位於CIE圖之三角形中的任何位置，該三角形藉由獨立之紅光、綠光及藍光光源所表示，且幾乎可涵蓋該黑體輻射曲線的任何色溫值。因此，直接觀察圖式即可得知，其光 的色調或色彩也符合理想黑體輻射曲線的色調或色彩。 Referring to FIG. 3, the CIE diagram shown in FIG. 3 represents the color coordinate value (or CIE coordinate value) of the RGB LED light source, and indicates that it falls on the curve of the ideal black body radiation. The triangle in the diagram represents the full color or tonal range that the RGB LED source may have. The curve in the figure shows the curve formed when the black body radiates at different color temperatures, and the point represents the CIE coordinate of the black body radiation at a color temperature of 4500K. By appropriately adjusting the ratio of the light output by the RGB LED, the CIE coordinate value of the light emitted can be located anywhere in the triangle of the CIE diagram, represented by independent red, green, and blue light sources. And almost any color temperature value of the black body radiation curve can be covered. Therefore, by directly observing the pattern, you can know that its light The hue or color also matches the hue or color of the ideal blackbody radiation curve.

然而，該RGB LED光源卻提供很差的顯色性。以品質來說，比較圖2所示之RGB LED照明燈的光譜，及色溫同為4500K之理想黑體輻射的光譜圖204，由圖示可以以看得出來，RGB LED照明燈的光譜中有許多深的斷差與空隙，也有許多光譜的波峰。此光譜圖表示其顯色指數很低。相反地，具有高顯色指數的高品質光可達到平順的輸出光譜圖，包括填滿光譜中的斷差與間隙，且尖銳的波峰也會減少許多。 However, the RGB LED source provides poor color rendering. In terms of quality, compare the spectrum of the RGB LED illumination shown in Figure 2 with the spectrum of the ideal blackbody radiation with a color temperature of 4500K. It can be seen from the figure that there are many spectra in the RGB LED illumination. Deep breaks and gaps also have many spectral peaks. This spectrum shows that its color rendering index is very low. Conversely, high-quality light with a high color rendering index achieves a smooth output spectrum, including filling gaps and gaps in the spectrum, and sharp peaks are also much reduced.

一般用於提供具有良好顯色指數(例如，高於100)之發光二極體光源的製作方法是利用塗佈有螢光材料的藍光發光二極體。藉由藍光發光二極體誘發自螢光材料所發出的光，以產生斯拖克斯位移之螢光材料的激發，而發出光波長範圍大於原激發光波長範圍之輸出光。斯拖克斯位移可位移的範圍自數十nm至200nm以上。在發光二極體照明燈中，典型的激發光波長範圍是410nm至490nm(即色彩自紫色或靛藍色，以至於藍色)。根據所使用的螢光材料，主要輸出之光波長範圍也許可於綠光，或紅光等可見光光譜範圍。前述螢光材料的配方可於市售產品購得，且其被設計用以吸收波長較短的光(例如吸收藍光發光二極體所發出的光)，並輸出波長較長的光。前述螢光材料所輸出的光具有較大的光譜頻寬，典型之最大半高寬頻帶是50-160nm，而一般的發光二極體的最大半高寬頻帶僅有25-30nm。以在發光二極體上塗佈有綠光、黃光 ，及/或紅光螢光材料之具有較寬輸出光波長頻寬的光源，取代輸出光波長頻寬較窄之綠光及紅光發光二極體，進而製作出提供較高顯色指數之輸出光譜。市售的螢光材料主要以矽酸鹽、鋁酸鹽、氮化物所構成，且為細小微粒狀或粉末狀，並具有各種不同的輸出光波長範圍、效能、壽命……等。該螢光材料通常是混合於矽凝膠或環氧樹脂中，並施加於發光二極體晶片的頂部。 A method of fabricating a light-emitting diode source generally provided with a good color rendering index (e.g., above 100) utilizes a blue light-emitting diode coated with a phosphor material. The light emitted from the phosphor material is induced by the blue light emitting diode to generate excitation of the fluorescent material of the Stokes shift, and the output light having a wavelength range greater than the wavelength range of the original excitation light is emitted. The Strokes displacement can range from tens of nanometers to more than 200 nm. In a light-emitting diode illumination lamp, typical excitation light wavelengths range from 410 nm to 490 nm (ie, the color is from purple or indigo to blue). Depending on the phosphor material used, the main output light wavelength range may be in the visible light spectrum such as green light or red light. The formulation of the aforementioned fluorescent material is commercially available and is designed to absorb light of a shorter wavelength (e.g., absorb light emitted by a blue light emitting diode) and output light of a longer wavelength. The light output by the aforementioned fluorescent material has a large spectral bandwidth, typically a maximum half-height wide band of 50-160 nm, and a typical light-emitting diode has a maximum half-height wide band of only 25-30 nm. Applying green light and yellow light to the light emitting diode And/or a red light-emitting material having a wider wavelength of the output light wavelength, replacing the green light and the red light-emitting diode having a narrow wavelength band of the output light, thereby producing a higher color rendering index. Output spectrum. Commercially available fluorescent materials are mainly composed of citrate, aluminate, and nitride, and are fine particles or powders, and have various output light wavelength ranges, efficiencies, lifetimes, and the like. The phosphor material is typically mixed in a silicone gel or epoxy and applied to the top of the LED wafer.

圖4表示習知技術之一發光二極體照明燈的光譜圖，並表示藍光發光二極體直接輸出的光譜401，及自所施加之螢光材料所輸出之較寬的光譜，主要是在黃光的光譜範圍402。藉由適當地選擇適合施加於發光二極體的螢光材料，該習知技術之光源可以被設計達到如同圖2之色溫為4500K的RGB LED光源。因此，其CIE圖將與圖3相同。然而，其光譜圖較RGB LED光源更為接近而符合色溫4500K之理想黑體輻射的光譜403，而光譜圖中具有較少的深斷差及間隙。習知技術之使用螢光材料的發光二極體照明燈的顯色指數可達100，更有甚者可達到90。 4 is a view showing a spectrum of a light-emitting diode illumination lamp of the prior art, and showing a spectrum 401 directly outputted by the blue light-emitting diode, and a wider spectrum output from the applied fluorescent material, mainly in The spectral range of yellow light is 402. The light source of the prior art can be designed to achieve an RGB LED light source having a color temperature of 4500K as shown in Fig. 2 by appropriately selecting a fluorescent material suitable for application to the light emitting diode. Therefore, its CIE diagram will be the same as Figure 3. However, the spectrogram is closer to the RGB LED source and conforms to the spectrum 403 of the ideal blackbody radiation with a color temperature of 4500K, while the spectrogram has fewer deep breaks and gaps. Light-emitting diode lamps using fluorescent materials of the prior art have a color rendering index of up to 100, and even more can reach 90.

雖然使用藍光發光二極體及螢光材料的發光二極體照明燈的色溫(及色調)可以藉由選擇使用適當螢光材料及所施加之螢光材料的厚度與密度而被控制，但若需再達到更進一步之精準控制，卻是很困難的。再者，利用此結構去設計可調整及改變色溫之光源也很困難。據此，其中一個習知技術的解決方法是利用增加紅色發光二極體晶片的數量，並可單獨控制該等紅色發光二極體電流，進 而達到色溫的控制，以及色溫的可調整性或改變色溫。藉由改變來自具有螢光材料之藍光發光二極體所輸出光及紅光發光二極體的比例，既而調整經組合所輸出光的色溫。圖5表示該結構的光譜圖，並顯示有藍光發光二極體的波峰501、經磷光所輸出之較寬的光譜502，及紅光發光二極體的波峰503，且亦是與色溫同為4500K的理想黑體輻射的光譜504比較。藉由改變紅光發光二極體所輸出的光，該CIE坐標值將沿著曲線移動至其他色溫。雖然紅光發光二極體的增加也許可以輕微地改善照明燈的顯色指數，卻也導致光譜之紅光區域中有過多的波峰，造成在低色溫時的顯色指示低落(其必須增加紅光發光二極體)。除此之外，在光源中紅光發光二極體晶片的位置會導致在視線範圍中的紅光「熱點」，及色溫/色調均勻性不良。為了達到CIE圖接近黑體輻射之曲線的目的，施加螢光材料時的精準控制仍是必須的。 Although the color temperature (and hue) of a light-emitting diode illumination lamp using a blue light-emitting diode and a fluorescent material can be controlled by selecting the appropriate phosphor material and the thickness and density of the applied phosphor material, It is very difficult to achieve further precision control. Furthermore, it is also difficult to design a light source that can adjust and change the color temperature using this structure. Accordingly, one of the solutions of the prior art is to increase the number of red light-emitting diode chips, and to separately control the red light-emitting diode currents. The color temperature is controlled, and the color temperature is adjustable or the color temperature is changed. The color temperature of the combined output light is adjusted by changing the ratio of the light output from the blue light-emitting diode having the fluorescent material and the red light-emitting diode. Figure 5 shows the spectrum of the structure, and shows the peak 501 of the blue light emitting diode, the broad spectrum 502 output by the phosphorescence, and the peak 503 of the red light emitting diode, and is also the same as the color temperature. A comparison of the spectrum 504 of the ideal blackbody radiation of 4500K. By changing the light output by the red light emitting diode, the CIE coordinate value will move along the curve to other color temperatures. Although the increase of the red light emitting diode may slightly improve the color rendering index of the illumination lamp, it also causes excessive peaks in the red region of the spectrum, resulting in a low color indication at low color temperatures (it must increase red) Light emitting diode). In addition, the position of the red light-emitting diode wafer in the light source causes red light "hot spots" in the line of sight range, and poor color temperature/tone uniformity. In order to achieve the CIE diagram close to the black body radiation curve, precise control when applying the fluorescent material is still necessary.

復參閱圖3，每一道光的色調或色彩在CIE圖中都有一坐標(x,y)。該黑體輻射的曲線在CIE圖中是已定義好的曲線。當欲使照明燈之光的色調位於該黑體輻射的曲線上時，其指的是照明燈之光的色調「接近」或「鄰近」該黑體輻射的曲線即可滿足，且此處之「接近」或「鄰近」定義為坐標之「x」及「y」與黑體輻射的曲線之「x」及「y」的差值在+\- 0.006內，而具有預定的色溫值。 Referring to Figure 3, the hue or color of each light has a coordinate (x, y) in the CIE diagram. The curve of the black body radiation is a defined curve in the CIE diagram. When the color of the light of the illumination light is to be on the curve of the black body radiation, it means that the color of the light of the illumination lamp is "close" or "adjacent" to the curve of the black body radiation, and the "close to" Or "adjacent" is defined as the difference between the "x" and "y" of the coordinates and the "x" and "y" of the curve of the blackbody radiation within +\- 0.006, and has a predetermined color temperature value.

由上述可知，為了更高品質光之應用，提供組 合來自於多數發光二極體晶片的群簇或陣列之發光二極體照明燈所發出的光是有必要的。除了提供發光二極體關於效能、壽命長及高可靠度等一般優點外，其色溫亦應具備易受控制的特性，較佳地是具備以某些以使用者控制的形式，在一廣域下調變色溫的能力。較佳地，透過照明燈的色溫控制的相關方式，其也提供極佳的顯色性，具有高達95的顯色指數，及理想狀況下可達98以上的顯色指數值。最後，該發光二極體照明燈以此技術領域的角度觀之，其發出的光在色彩及色調的表現形式是極一致的。 As can be seen from the above, for the application of higher quality light, the group is provided. It is necessary to combine the light emitted by the cluster or array of LEDs from most of the LED chips. In addition to providing the general advantages of light-emitting diodes in terms of performance, long life and high reliability, the color temperature should also have controllable characteristics, preferably in a user-controlled form, in a wide area. The ability to adjust the color temperature. Preferably, the color temperature control through the illumination lamp also provides excellent color rendering, a color rendering index of up to 95, and a color rendering index value of 98 or more under ideal conditions. Finally, the LED illumination lamp is viewed from the perspective of the technical field, and the emitted light is extremely consistent in color and hue expression.

因此，本發明之目的，即在提供一種可改變色溫及高顯色指數的照明裝置。 Accordingly, it is an object of the present invention to provide an illumination device that can change color temperature and high color rendering index.

本發明的照明裝置包含一發光二極體陣列、多數發光材料、一控制電路，及一使用者界面。 The illumination device of the present invention comprises an array of light emitting diodes, a plurality of luminescent materials, a control circuit, and a user interface.

該發光二極體陣列具有嵌置於一基板且彼此緊臨的多數發光二極體晶片，該發光二極體陣列包括三個以上以該等發光二極體晶片構成的發光二極體串，其中，該等發光二極體串發出選自藍光、靛藍光、紫光，及此等之一組合之一種以上波長的光，且具有小於490nm的峰值波長。該等發光材料設置於該發光二極體陣列的每個發光二極體晶片上，該等發光材料分別發出波長大於該等發光二極體晶片所發出的光波長且波長範圍相異的光，來自該等發光材料的光是響應於自該等發光二極體晶片所發出的光。該控制電路適用於該等發光二極體串的電流，使得該等 發光二極體串發出供該等發光材料發光的光。該使用者界面供使用者控制施加於該控制電路至該等串發光二極體的電流，以達到使用者預定的色溫值及色調，且具有落在或接近一黑體輻射曲線的CIE坐標值。 The LED array has a plurality of LED chips embedded in a substrate and adjacent to each other, and the LED array includes three or more LED strings formed by the LED chips. Wherein, the light emitting diode strings emit light of one or more wavelengths selected from the group consisting of blue light, blue light, violet light, and a combination thereof, and have a peak wavelength of less than 490 nm. The luminescent materials are disposed on each of the illuminating diode arrays of the illuminating diode array, and the luminescent materials respectively emit light having a wavelength greater than a wavelength of light emitted by the illuminating diode chips and having a different wavelength range. Light from the luminescent materials is responsive to light emitted from the luminescent diode wafers. The control circuit is adapted to the currents of the light emitting diode strings, such that The light emitting diode strings emit light for the luminescent materials to emit light. The user interface is for the user to control the current applied to the string of light-emitting diodes to achieve a predetermined color temperature value and hue of the user, and has a CIE coordinate value that falls at or near a black body radiation curve.

再者，本發明之另一照明裝置包含一基板、一發光二極體陣列、多數具有不同輸出光譜的發光材料，及一控制電路。 Furthermore, another illumination device of the present invention comprises a substrate, an array of light emitting diodes, a plurality of luminescent materials having different output spectra, and a control circuit.

該發光二極體陣列位於該基板上，該發光二極體陣列包括三串以上之分別具有多數個未封裝之發光二極體晶片之發光二極體晶片串，其中，該等發光二極體晶片串發出選自不同波長範圍之藍光、靛藍光、紫光，及等之一組合，並具有小於490nm的峰值波長。該等具有不同輸出光譜的發光材料位於該發光二極體陣列的該等發光二極體晶片上，其輸出的光響應於自該等發光二極體晶片所發出的光，該等發光材料的發光波長範圍大於該等發光二極體晶片所發出光的波長。該控制電路施加電流至該等發光二極體串，使發光二極體晶片串發光，該等發光二極體晶片串的光使得該等發光材料發光，其中，該等具有發光材料於其上之發光二極體晶片串所發出的光分別具有不同的色溫值、不同的色調，及不同的CIE坐標值。該使用者界面供使用者控制利用該控制電路施加至發光二極體晶片串的電流，以達到使用者預定的色溫值、色調及CIE值，該CIE值位於該等發光二極體晶片的CIE值間，且該照明裝置的色溫值、色調及CIE值接近或位於該黑體輻射曲線上 。 The LED array is disposed on the substrate, and the LED array comprises three or more LED diode chips having a plurality of unpackaged LED chips, wherein the LEDs are The wafer string emits a combination of blue light, neon blue light, violet light, and the like selected from different wavelength ranges, and has a peak wavelength of less than 490 nm. The luminescent materials having different output spectra are located on the illuminating diode chips of the illuminating diode array, and the output light is responsive to light emitted from the illuminating diode chips, the luminescent materials The range of illuminating wavelengths is greater than the wavelength of light emitted by the illuminating diode wafers. The control circuit applies a current to the light emitting diode strings to cause the light emitting diode chip string to emit light, and the light of the light emitting diode chip strings causes the light emitting materials to emit light, wherein the light emitting materials have thereon The light emitted by the LED array has different color temperature values, different color tones, and different CIE coordinate values. The user interface is for the user to control the current applied to the LED array by the control circuit to achieve a predetermined color temperature value, hue and CIE value of the user, the CIE value being located in the CIE of the LED chip. Between values, and the color temperature value, hue and CIE value of the illumination device are close to or on the black body radiation curve .

201‧‧‧光譜 201‧‧‧Spectrum

202‧‧‧光譜 202‧‧‧Spectrum

203‧‧‧光譜 203‧‧‧Spectrum

204‧‧‧光譜 204‧‧‧Spectrum

401‧‧‧光譜 401‧‧‧Spectrum

402‧‧‧光譜 402‧‧‧Spectrum

403‧‧‧光譜 403‧‧‧Spectrum

501‧‧‧光譜 501‧‧‧Spectrum

502‧‧‧光譜 502‧‧‧Spectrum

503‧‧‧光譜 503‧‧‧Spectrum

504‧‧‧光譜 504‧‧‧Spectrum

6A01‧‧‧發光二極體晶片 6A01‧‧‧Light Emitter Wafer

6A02‧‧‧電連接器 6A02‧‧‧Electrical connector

6A06‧‧‧中心 6A06‧‧ Center

V‧‧‧垂直軸 V‧‧‧ vertical axis

H‧‧‧水平軸 H‧‧‧ horizontal axis

D1‧‧‧對角線 D1‧‧‧ diagonal

D2‧‧‧對角線 D2‧‧‧ diagonal

6B01‧‧‧發光二極體晶片 6B01‧‧‧Light Diode Wafer

6B03‧‧‧透鏡 6B03‧‧‧ lens

701‧‧‧發光二極體陣列 701‧‧‧Lighting diode array

702‧‧‧散熱器 702‧‧‧ radiator

704‧‧‧風扇 704‧‧‧fan

705‧‧‧印刷電路板 705‧‧‧Printed circuit board

706‧‧‧二次光學元件 706‧‧‧Secondary optical components

803‧‧‧散熱片 803‧‧‧ Heat sink

807‧‧‧光擴散元件 807‧‧‧Light diffusing element

808‧‧‧外殼 808‧‧‧Shell

9A01‧‧‧光譜 9A01‧‧‧Spectrum

9A02‧‧‧光譜 9A02‧‧‧Spectrum

9A03‧‧‧光譜 9A03‧‧‧Spectrum

9A04‧‧‧光譜 9A04‧‧‧Spectrum

9A05‧‧‧光譜 9A05‧‧‧Spectrum

9A06‧‧‧光譜 9A06‧‧‧Spectrum

1101‧‧‧發光二極體晶片 1101‧‧‧Light Emitting Diode Wafer

1103‧‧‧金屬焊接層 1103‧‧‧Metal welding layer

1201‧‧‧發光二極體晶片 1201‧‧‧Light Emitting Diode Wafer

1202‧‧‧金屬電路板 1202‧‧‧Metal circuit board

1203‧‧‧金屬焊接層 1203‧‧‧Metal welding layer

1204‧‧‧矽凝膠 1204‧‧‧矽 gel

1205‧‧‧螢光材料 1205‧‧‧Fluorescent materials

1206‧‧‧矽凝膠 1206‧‧‧矽 gel

1207‧‧‧表面 1207‧‧‧ surface

1301‧‧‧發光二極體串 1301‧‧‧Light-emitting diode strings

1401‧‧‧發光二極體串 1401‧‧‧Lighting diode strings

本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1表示一理想黑體輻射於數個色溫的光譜圖；圖2表示習知技術之一典型RGB LEDs照明燈的光譜圖；圖3表示同於圖2所示之RGB LEDs照明燈的CIE圖；圖4表示習知技術之一典型塗覆有螢光材料於其上以產生白光之藍光發光二極體照明燈的光譜；圖5表示習知技術之一具有紅光發光二極體晶片並塗覆有螢光材料於其上以產生暖白光之藍光發光二極體的光譜，或潛在地具備調整光之色溫的能力；圖6及7表示本發明發光二極體陣列的一較佳實施例的俯視及側視圖，並表示使用具有多數個磷光之多數個發光二極體晶片，並設置為多數道或多數串發光二極體；圖8及9表示本發明施加螢光材料之發光二極體陣列的該較佳實施例，並表示一照明裝置的立體圖，且未包含有外殼；圖10為本發明照明裝置之該較佳實施例的細部結構；圖11為本發明照明裝置之該較佳實施例的發光二極體 陣列的光譜圖，表示具有非常高的顯色指數；圖12表示本發明發光二極體陣列之較佳實施例的CIE圖；圖13及14表示本發明發光二極體陣列的較佳實施例，並表示兩種波長之發光二極體晶片及三種形式之螢光材料的分佈圖，特別地，其提供良好的混色及光均勻性；圖15表示本發明發光二極體陣列的較佳實施例的剖視示意圖，並表示施加透明矽凝膠及螢光材料前之發光二極體晶片的剖視示意圖，以描述發光二極體的發光特性；圖16表示本發明發光二極體陣列的較佳實施例的剖視示意圖，並表示施加透明矽凝膠及螢光材料後之發光二極體晶片的剖視示意圖，以描述受增進之發光二極體的發光特性；及圖17及18表示本發明2個等效電路方塊圖，並表示分別控制多數發光二極體串的能力，從而控制照明燈所發出之光的強度及色溫。 Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: Figure 1 shows a spectrum of an ideal black body radiated at several color temperatures; Figure 2 shows a typical RGB LEDs of one of the conventional techniques. A spectrogram of the illuminator; Figure 3 shows a CIE diagram of the RGB LEDs illuminator as shown in Figure 2; and Figure 4 shows a blue illuminating dipole typically coated with a luminescent material thereon to produce white light. Spectrum of a body illuminator; Figure 5 shows a spectrum of a conventional blue light emitting diode having a red light emitting diode chip coated with a phosphor material to produce warm white light, or potentially having an adjustment The ability of color temperature of light; Figures 6 and 7 show a top view and a side view of a preferred embodiment of the array of light-emitting diodes of the present invention, and shows that a plurality of light-emitting diode chips having a plurality of phosphorescences are used and are provided as a majority Figure 8 and 9 show a preferred embodiment of the array of light-emitting diodes of the present invention, and a perspective view of a lighting device, and without a housing; Figure 10 Lighting device of the invention Detailed structure of the preferred embodiment; FIG. 11 is a light emitting diode of the preferred embodiment of the illumination device of the present invention The spectrum of the array is shown to have a very high color rendering index; FIG. 12 is a CIE diagram of a preferred embodiment of the LED array of the present invention; and FIGS. 13 and 14 show a preferred embodiment of the LED array of the present invention. And showing a distribution map of two wavelengths of the LED chip and three types of phosphor materials, in particular, providing good color mixing and light uniformity; FIG. 15 shows a preferred implementation of the LED array of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 16 is a schematic cross-sectional view showing a light-emitting diode wafer before application of a transparent germanium gel and a fluorescent material to describe the light-emitting characteristics of the light-emitting diode; FIG. 16 is a view showing the light-emitting diode array of the present invention. A schematic cross-sectional view of a preferred embodiment showing a schematic cross-sectional view of a light-emitting diode wafer after application of a transparent germanium gel and a fluorescent material to describe the luminescent properties of the improved light-emitting diode; and FIGS. 17 and 18 The two equivalent circuit block diagrams of the present invention are shown, and the ability to control a plurality of light-emitting diode strings, respectively, is controlled to control the intensity and color temperature of the light emitted by the illumination lamp.

有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之較佳實施例的詳細說明中，將可清楚的呈現。 The foregoing and other objects, features, and advantages of the invention are set forth in the <RTIgt;

本發明照明裝置除了達到極高的顯色指數，也具有易於控制、可調整，及可改變的色溫及色調，並具有 優良的色彩混合及均勻性。本發明是透過使用一個或多個藍光(及/或紫光或靛藍光)發光二極體而達成前述優點。換句話說，當使用相異波長範圍之發光二極體所輸出的光，其光波長範圍可能在一個或多個藍光、紫光及靛藍光範圍中。所有的發光二極體塗佈有各種形態之具有相異輸出光譜的螢光材料。發光二極體的峰值波長作為該螢光材料發光的激發源，並於490nm以下。該螢光材料所輸出的光波長長於激發前的波長20-150nm。再者，對相異的發光二極體晶片，並配合分別設於其上之螢光材料，透過不同的驅動電流的獨立控制，進而可輕易調整及改變光源的色溫。 In addition to achieving a very high color rendering index, the lighting device of the present invention has an easy to control, adjustable, and changeable color temperature and hue, and has Excellent color mixing and uniformity. The present invention achieves the aforementioned advantages by using one or more blue (and/or violet or neon blue) light emitting diodes. In other words, when light emitted by a light-emitting diode of a different wavelength range is used, its light wavelength range may be in one or more of the blue, violet, and blue light ranges. All of the light-emitting diodes are coated with fluorescent materials of various forms having distinct output spectra. The peak wavelength of the light-emitting diode is used as an excitation source for the light-emitting of the fluorescent material, and is 490 nm or less. The fluorescent material outputs a wavelength of light longer than the wavelength before excitation of 20-150 nm. Furthermore, the different light-emitting diode chips can be easily adjusted and changed by the independent control of the different driving currents by the fluorescent materials respectively disposed thereon.

除了利用傳統的螢光材料外，亦可以使用其他種類的發光材料，包括多數量子點。該等量子點的佈置關鍵在於其輸出光譜不只與量子點的材質有關，也與該等量子點的尺寸有關。透過適當地選擇量子點之材料及尺寸範圍，可達到不同的輸出光譜。與傳統螢光材料類似地，量子點受波長較短的光激發。再者，正如同傳統的螢光材料，也可於市售取得各種激發波長及輸出光譜的量子點。量子點與傳統螢光材料的一個關鍵相異處在於，市售可取得之量子點具有除了可發出在可見光之藍光範圍的光外，也可發出在綠光、黃光與紅光範圍的光譜。雖然有上述差異處，量子仍亦可替代本發明於上所述之螢光材料。 In addition to using conventional fluorescent materials, other types of luminescent materials can be used, including most quantum dots. The key to the arrangement of these quantum dots is that their output spectra are not only related to the material of the quantum dots, but also to the size of the quantum dots. Different output spectra can be achieved by appropriately selecting the material and size range of the quantum dots. Similar to conventional fluorescent materials, quantum dots are excited by light of shorter wavelengths. Furthermore, just like conventional fluorescent materials, quantum dots of various excitation wavelengths and output spectra are commercially available. One of the key differences between quantum dots and traditional fluorescent materials is that commercially available quantum dots have a spectrum of green, yellow, and red light in addition to light that emits in the blue range of visible light. . Although there are such differences, the quantum can also replace the fluorescent material of the present invention described above.

本發明一微型的照明裝置之一較佳實施例，包含一具有光學元件之發光二極體陣列，並於視線範圍下均 一地輸出強烈且寬光譜的光。該發光二極體陣列具有多數條發光二極體串，每一發光二極體串具有多數光波長相異之發光二極體晶片，且每一發光二極體串分別受電流控制。該等發光二極體晶片之光波長的激發來自市售之螢光材料的輸出光。多種型態及輸出光譜的螢光材料分別配置或施加於該等發光二極體晶片的頂部，則不同形式的螢光材料可分別位於各個發光二極體晶片上。除了使用傳統的螢光材料外，也可使用其他種類的發光材料，例如量子點。由於多數個電流流道分別對應每一發光二極體串，則該等發光二極體串所發出的色彩及效能可獨立地受控制而開啟、關閉，及分別改變強度，進而使該發光二極體之照明裝置在維持極高的顯色指數下，仍可改變及可調變色溫。該等發光二極體波長與不同型態的螢光材料(或其他種類的發光材料)的模式及輸出光譜是為了高色彩均勻性而配置。緊接著該發光二極體陣列的該等光學元件用來收集及重塑其所發出的光，進而增強光耦合效率及均勻性。一貼附至該發光二極體陣列之表面的透鏡能增加光提出率，且具有反射鏡、附加透鏡，及/或擴散鏡的二次光學元件(secondary optics)可用於進一步地重塑光，及進一步地增進光的輸出及色彩之均質性及均勻性。 A preferred embodiment of a miniature illumination device of the present invention comprises an array of light-emitting diodes having optical elements and is in view of the line of sight A strong and broad spectrum of light is output at one location. The LED array has a plurality of LED strings, each LED string has a plurality of LED dipoles having different wavelengths of light, and each LED string is respectively controlled by current. The excitation of the wavelength of light of the light-emitting diode wafers is derived from the output light of commercially available phosphor materials. A plurality of types and output spectral phosphor materials are respectively disposed or applied to the top of the light emitting diode wafers, and different forms of phosphor materials may be respectively disposed on the respective light emitting diode wafers. In addition to the use of conventional fluorescent materials, other types of luminescent materials, such as quantum dots, can also be used. Since a plurality of current flow paths respectively correspond to each of the light-emitting diode strings, the color and performance of the light-emitting diode strings can be independently controlled to be turned on and off, and the intensity is respectively changed, thereby causing the light-emitting two The polar lighting device can still change and adjust the color temperature while maintaining a very high color rendering index. The modes and output spectra of the light-emitting diode wavelengths and different types of fluorescent materials (or other types of luminescent materials) are arranged for high color uniformity. The optical elements of the array of light-emitting diodes are used to collect and reshape the light emitted thereby enhancing optical coupling efficiency and uniformity. A lens attached to the surface of the array of light-emitting diodes can increase the rate of light extraction, and secondary optics having mirrors, additional lenses, and/or diffusing mirrors can be used to further reshape the light, And further enhance the output of light and the homogeneity and uniformity of color.

本發明的另一較佳實施例，是用於敘述達到高螢光激發效率的方法。一具有高折射係數的透明材料，例如矽凝膠，是用於填充滿該等發光二極體晶片的周圍，進而增加光自「厚板狀」之該等發光二極體晶片的側面向外 導出的程度。具有不同螢光材料的矽凝膠分別被設置於每一晶片的頂部，透過此一方式，使得該等發光二極體晶片受含有螢光材料的矽凝膠所覆蓋而不會有空隙及間隙。不同的螢光材料可佈設於該發光二極體陣列中的相異發光二極體晶片上。該步驟也可使用其他種類的發光材料，例如量子點。上述的較佳實施例將於下進行詳細地敘述。 Another preferred embodiment of the present invention is for describing a method of achieving high fluorescence excitation efficiency. A transparent material having a high refractive index, such as a ruthenium gel, is used to fill the periphery of the light-emitting diode wafers, thereby increasing the light from the side of the "thick-plate" of the light-emitting diode wafers. The extent of the export. A ruthenium gel having different fluorescent materials is respectively disposed on the top of each wafer, and the light-emitting diode wafer is covered by the ruthenium gel containing the fluorescent material without voids and gaps. . Different phosphor materials can be disposed on the different light emitting diode chips in the array of light emitting diodes. Other types of luminescent materials, such as quantum dots, can also be used in this step. The above preferred embodiments will be described in detail below.

參閱圖6及圖7，分別為本發明之發光二極體陣列之一實施方式的俯視圖及側視圖。該發光二極體陣列包括多數個的發光二極體晶片6A01、6B01。在圖6及圖7所示的該發光二極體陣列具有60個發光二極體晶片，但該等發光二極體晶片的數量可以小至4個，也可多達100個，並不以圖6及圖7中所示的數量為限。在圖6及圖7中，該較佳實施例之該等發光二極體晶片6A01、6B01的尺寸實質為1mm×1mm，但不以此為限，該等發光二極體晶片6A01、6B01也可使用其他尺寸，且一發光區域的尺寸也是根據該等發光二極體晶片6A01、6B01的數量、尺寸，及該等發光二極體晶片6A01、6B01間的間隙而定。在圖6中，每一小方塊表示各個發光二極體晶片6A01。在本較佳實施例中，該發光區域的尺寸實質為5-25mm，此一尺寸大小是根據該陣列中之發光二極體晶片6A01的數量、每一晶片6A01尺寸，及空隙而定，從而使該發光二極體陣列為「點光源的延伸」。另外，設置於該發光二極體陣列上方之該單一透鏡6B03的尺寸略大於該發光區域的尺寸，例如其尺寸實質為6 mm至30mm。 6 and 7 are top and side views, respectively, of an embodiment of a light emitting diode array of the present invention. The light emitting diode array includes a plurality of light emitting diode chips 6A01, 6B01. The light-emitting diode array shown in FIG. 6 and FIG. 7 has 60 light-emitting diode chips, but the number of the light-emitting diode chips can be as small as four or as many as 100, not The number shown in Figures 6 and 7 is limited. In FIG. 6 and FIG. 7 , the size of the LEDs 6A01 and 6B01 of the preferred embodiment is substantially 1 mm×1 mm, but not limited thereto, and the LEDs 6A01 and 6B01 are also limited. Other sizes can be used, and the size of a light-emitting area is also determined by the number and size of the light-emitting diode chips 6A01, 6B01 and the gap between the light-emitting diode chips 6A01, 6B01. In Fig. 6, each small square represents each of the light emitting diode chips 6A01. In the preferred embodiment, the size of the light-emitting area is substantially 5-25 mm, and the size is determined according to the number of the LEDs 6A01 in the array, the size of each of the chips 6A01, and the gap, thereby The light-emitting diode array is made "an extension of a point source". In addition, the size of the single lens 6B03 disposed above the LED array is slightly larger than the size of the light emitting region, for example, the size is substantially 6 Mm to 30mm.

在該陣列中的該等發光二極體晶片6A01電連接成為多數發光二極體電流通道(channel)，每一發光二極體電流通道具有至少一個發光二極體晶片6A01，或一串發光二極體晶片6A01(即一發光二極體晶片串)。每一發光二極體晶片串或電流通道受控制而為單一個體，且每串發光二極體晶片串中的所有發光二極體晶片6A01具有單一流通過所有晶片6A01的電流，使得每一串發光二極體晶片串中的每個發光二極體晶片6A01產生相似亮度的光。在該陣列中的每一發光二極體晶片串分別電連接於不同的電連接器6A02，並以電子插腳(pin)或電子墊片(pad)的方式表示如圖6，使得相異發光二極體晶片串之亮度可獨立地控制及調變。在圖6及圖7所示之較佳實施例中是包括10個電流通道或10串發光二極體晶片串，並在每一發光二極體晶片6A01中表示每一電流通道的號碼，且每一發光二極體晶片串也分別鄰近所對應之該等電連接器6A02。該等電流通道的數量是可改變的，以下將更詳細地敘述。若必須有較低數量之可分別控制的電流通道時，該等電流通道也可於該陣列外彼此電連接。舉例來說，雖然圖6及圖7所示之較佳實施例包括10個電流通道的發光二極體晶片6A01、6B01，該較佳實施例也可具有4個驅動電流，每一驅動電流驅動2個發光二極體晶片串。一般來說，該等電流通道經串聯後透過單一個驅動電流驅動，使得該電流通道的驅動電流是固定的。圖6及圖7所 示之較佳實施例的發光二極體陣列也結合一個或多個安裝於內部的熱敏電阻晶片(圖未示出)，其電連接某些電連接器，以達到監視陣列溫度的目的。 The LEDs 6A01 in the array are electrically connected to form a plurality of light-emitting diode current channels, each of the LED current channels having at least one LED chip 6A01, or a string of two LEDs The polar body wafer 6A01 (ie, a light emitting diode wafer string). Each light-emitting diode chip string or current channel is controlled to be a single individual, and all of the light-emitting diode chips 6A01 in each string of light-emitting diode wafers have a single current flowing through all of the wafers 6A01, such that each string Each of the light-emitting diode chips 6A01 in the light-emitting diode wafer string produces light of similar brightness. Each of the light emitting diode chip strings in the array is electrically connected to a different electrical connector 6A02, respectively, and is represented by an electronic pin or an electronic pad as shown in FIG. The brightness of the polar body chip strings can be independently controlled and modulated. In the preferred embodiment shown in FIGS. 6 and 7, a sequence of 10 current channels or 10 strings of LED chips is included, and the number of each current channel is indicated in each of the LED chips 6A01, and Each of the light emitting diode chip strings is also adjacent to the corresponding electrical connectors 6A02, respectively. The number of such current channels can vary, as will be described in more detail below. If a lower number of separately controllable current channels are necessary, the current channels can also be electrically connected to each other outside the array. For example, although the preferred embodiment shown in FIGS. 6 and 7 includes eight current channel LEDs 6A01, 6B01, the preferred embodiment can also have four drive currents, each driven current drive. 2 LED arrays of light-emitting diodes. Generally, the current channels are driven in series and driven by a single drive current such that the drive current of the current channels is fixed. Figure 6 and Figure 7 The LED array of the preferred embodiment is also shown in combination with one or more internally mounted thermistor wafers (not shown) that electrically connect certain electrical connectors for the purpose of monitoring the temperature of the array.

為了釋出該發光二極體陣列中數量龐大且彼此受封裝而緊臨之發光二極體晶片6A01、6B01所產生的廢熱，熱管理是本發明的設計要件。該發光二極體陣列結合一提供每一發光二極體晶片串之導電電路的金屬電路板(MCB)(圖未示出)，其在同一時間點提供該等發光二極體晶片串間電隔離。該金屬電路板也提供高熱導力，既而可將廢熱自高密度設置之該等發光二極體晶片6A01、6B01釋出。該具有導熱金屬之發光二極體陣列金屬電路基板(MCB LED array substrate)，將來自發光二極體晶片6A01、6B01的廢熱輸導至該金屬電路板的基板之基底，且該金屬電路板的基板裝置於一散熱器或一散熱片之上。本發明所述之金屬電路板在美國專利US 10,044,427，名稱為「LIGHT EMITTING DIODE SUBMOUNT WITH HIGH THERMAL CONDUCTIVITY FOR HIGH POWER OPERATION」中有更詳細的說明，在此就不多加贅述。 In order to release the waste heat generated by the large number of light-emitting diode chips 6A01, 6B01 in the array of light-emitting diodes which are closely packed with each other, thermal management is a design requirement of the present invention. The LED array is coupled to a metal circuit board (MCB) (not shown) that provides a conductive circuit for each of the LED strings, which provides electrical isolation between the LEDs at the same time point. . The metal circuit board also provides high thermal conductivity, and the waste heat can be released from the high-density arrangement of the light-emitting diode chips 6A01, 6B01. The MCB LED array substrate has a thermally conductive metal, and heats waste heat from the LED chips 6A01 and 6B01 to a substrate of the substrate of the metal circuit board, and the metal circuit board The substrate device is mounted on a heat sink or a heat sink. The metal circuit board of the present invention is described in more detail in the name of "LIGHT EMITTING DIODE SUBMOUNT WITH HIGH THERMAL CONDUCTIVITY FOR HIGH POWER OPERATION", and will not be further described herein.

在本發明的較佳實施例中，同一發光二極體串中的發光二極體晶片6A01、6B01具有相似的波長。然而，不同的發光二極體晶片串的發光二極體晶片6A01、6B01或可具有不同的波長。在該發光二極體陣列的一較佳實施例中，某些發光二極體晶片串具有藍光、靛藍光及/或紫光之不同的波長，且其波峰小於490nm。類似地， 一發光二極體晶片串或電流通道可使用單一種螢光材料，或可使用多種螢光材料。值得注意的是，在所有的實施例中，該陣列的所有發光二極體晶片6A01、6B01分別塗覆有一種或多種螢光材料(如圖16之1205)，即便是相鄰的晶片6A01、6B01，也塗覆有不同形式的螢光材料。施加螢光材料至該等發光二極體晶片6A01、6B01的步驟允許不同或單一的螢光材料配方，以施加至每一發光發二極體晶片6A01、6B01的不同位置。在任一晶片6A01、6B01之螢光材料配方可含有單一種螢光材料、混合於矽凝膠中的螢光材料，或多種螢光材料的混合，以得到更寬的光譜。藉由分別控制流經相異發光二極體晶片串的電流，可改變不同光譜的相關比例。雖然在一發光二極體晶片串中之發光二極體晶片6A01、6B01的發光強度是在同一等級，但在該特定的發光二極體晶片串中，仍可使用分別具有不同波長的發光二極體晶片6A01、6B01。在本發明的另一較佳實施例中，為了達到涵蓋更寬廣之藍光區域的光譜，及特定螢光材料之光學激發，是使用多數波長範圍在藍光及靛藍光發光的二極體晶片6A01、6B01(例如，該等發光二極體晶片6A01、6B01的峰值波長約為430nm及455nm)。類似地，螢光材料的各種波長範圍，例如發出綠光、黃光，及紅光的螢光材料可使用於同一發光二極體串中，或使用於多數發光二極體串中，以達到涵蓋更寬廣之綠光、黃光及紅光的光譜比例。 In a preferred embodiment of the invention, the LED chips 6A01, 6B01 in the same LED string have similar wavelengths. However, the light emitting diode chips 6A01, 6B01 of different light emitting diode chip strings may have different wavelengths. In a preferred embodiment of the array of light-emitting diodes, certain light-emitting diode chips have different wavelengths of blue light, blue light, and/or violet light, and their peaks are less than 490 nm. Similarly, A single phosphor chip material or current channel can use a single fluorescent material, or a plurality of fluorescent materials can be used. It should be noted that, in all embodiments, all of the LED chips 6A01, 6B01 of the array are coated with one or more phosphor materials (such as 1205 in FIG. 16), even adjacent wafers 6A01, 6B01 is also coated with different forms of fluorescent materials. The step of applying a phosphor material to the light emitting diode chips 6A01, 6B01 allows for a different or a single phosphor material formulation to be applied to different locations of each of the light emitting diode chips 6A01, 6B01. The phosphor material formulation on either of the wafers 6A01, 6B01 may contain a single fluorescent material, a fluorescent material mixed in a ruthenium gel, or a mixture of a plurality of fluorescent materials to obtain a broader spectrum. The relative proportions of the different spectra can be varied by separately controlling the current flowing through the distinct light emitting diode chip strings. Although the luminous intensities of the LEDs 6A01 and 6B01 in a light-emitting diode chip string are at the same level, in the specific LED array, light beams having different wavelengths can be used. Polar body wafers 6A01, 6B01. In another preferred embodiment of the present invention, in order to achieve a spectrum covering a wider blue region, and optical excitation of a specific fluorescent material, a diode chip 6A01 using a majority of wavelengths in blue and blue light illumination is used. 6B01 (for example, the peak wavelengths of the light-emitting diode chips 6A01, 6B01 are about 430 nm and 455 nm). Similarly, various wavelength ranges of the fluorescent material, such as green, yellow, and red fluorescent materials, can be used in the same light-emitting diode string or in most light-emitting diode strings to achieve Covers the spectral ratio of the wider green, yellow and red light.

參閱圖8、圖9及圖10，其中，圖8及圖9表示本發明發光二極體之照明裝置的一較佳實施例，並繪示出除了該照明裝置的外殼以外其餘絕大部分區域的立體圖。圖8、圖9及圖10僅表示本發明之照明裝置的其中一個實施形式。在圖9中，該發光二極體陣列701設置於一散熱器702之上。如上所述地，該發光二極體陣列的金屬電路板(MCB)(圖9中未示出)提供自該等發光二極體晶片6A01、6B01(見圖6及圖7)至該散熱器702間的有效傳熱路徑。該照明裝置的較佳實施例中，某些形式的散熱片可設置於該散熱器702之下。需特別說明的是，在本較佳實施例中，圖9省略該散熱片未繪示(該散熱片繪示於圖10)是為了便於說明該散熱器702底部還設置有一風扇704。該風扇704的下方是一個具有用於該照明裝置之控制及驅動電路的印刷電路板705。為了重塑該發光二極體陣列701所輸出的光，還於該照明裝置中設置有一個二次光學元件706。在圖8所示的較佳實施例中，即是藉由一反射鏡做為二次光學元件706，並為光束塑形。此外，該照明裝置也可進一步地包括有額外的鏡片、光圈、快門、變焦機構……等。圖10表示本發明照明裝置之一較佳實施例其它的細部結構。該散熱片803設置於如圖9所示之該散熱器702及該風扇704間。為了提供更佳的混光均勻性，及輸出光的均質性，該照明裝置還可再包含一光擴散元件807，及一外殼808(為便於說明，圖10中僅以簡單而未經特別結構設計之外殼808表示，但實際使用時的態樣當 不以此為限)。 Referring to FIG. 8, FIG. 9 and FIG. 10, FIG. 8 and FIG. 9 show a preferred embodiment of the illumination device of the light-emitting diode of the present invention, and depict most of the area except the outer casing of the illumination device. Stereogram. 8, 9, and 10 show only one embodiment of the lighting device of the present invention. In FIG. 9, the LED array 701 is disposed on a heat sink 702. As described above, the metal circuit board (MCB) of the light emitting diode array (not shown in FIG. 9) is supplied from the light emitting diode chips 6A01, 6B01 (see FIGS. 6 and 7) to the heat sink. Effective heat transfer path between 702. In a preferred embodiment of the illumination device, some form of heat sink may be disposed beneath the heat sink 702. It should be noted that, in the preferred embodiment, the heat sink is not shown in FIG. 9 (the heat sink is shown in FIG. 10 ). For convenience of description, a fan 704 is further disposed at the bottom of the heat sink 702 . Below the fan 704 is a printed circuit board 705 having control and drive circuitry for the illumination device. In order to reshape the light output by the LED array 701, a secondary optical element 706 is also disposed in the illumination device. In the preferred embodiment shown in Figure 8, a mirror is used as secondary optic 706 and shaped for the beam. In addition, the illumination device may further include additional lenses, apertures, shutters, zoom mechanisms, and the like. Figure 10 is a view showing another detailed structure of a preferred embodiment of the lighting device of the present invention. The heat sink 803 is disposed between the heat sink 702 and the fan 704 as shown in FIG. In order to provide better light mixing uniformity and uniformity of output light, the illumination device may further comprise a light diffusing element 807, and a housing 808 (for ease of illustration, FIG. 10 is only simple and has no special structure. The design of the outer casing 808, but in actual use when Not limited to this).

雖然尚未於圖式中表示出來，完整的照明裝置應包含一個或多個控制鈕，或以其他形式供使用者控制。在一較佳實施例中，一控制鈕可用於控制該照明裝置所有的亮度，並具有一用於控制色溫的第二控制鈕。配置其他功能的控制鈕也是可行的，例如，具有一控制輸出低色溫之「暖白光」(例如2500K)亮度的控制鈕，並有一控制輸出較高色溫之「日光」(例如6500K)亮度的第二控制鈕。改變該二控制鈕的設定，可產生所輸出色溫範圍在2500K至6500K的光。再者，其他種類的控制的實施方式也在本發明所界定的範圍內。 Although not shown in the drawings, the complete lighting device should include one or more control buttons or be otherwise controlled by the user. In a preferred embodiment, a control button can be used to control all of the brightness of the illumination device and has a second control button for controlling the color temperature. It is also possible to configure controls for other functions, for example, a control button that controls the brightness of a "warm white light" (for example, 2500K) that outputs a low color temperature, and a control that outputs a "light" (for example, 6500K) brightness of a higher color temperature. Two control buttons. Changing the settings of the two control buttons produces light with a color temperature range of 2500K to 6500K. Furthermore, other types of control embodiments are also within the scope of the invention.

參閱圖11及圖16，圖11表示基於圖6至圖10所繪製之本發明照明裝置之一較佳實施例的發光二極體陣列701(見圖9)的光譜。該發光二極體陣列701包括2種波長之靛藍光及藍光發光二極體晶片1201(即圖6及圖7中的6A01、6B01)，並分別具有實質於430nm及455nm的光譜峰值9A01、9A02。該較佳實施例的該等發光二極體晶片1201塗覆有三種形式的螢光材料，其吸收自其中之一或兩種形式之藍光發光二極體晶片1201的光能，並發出大致在綠光9A03、黃光9A04及紅光9A05範圍之廣光譜的光。參閱圖16，需注意的是，該較佳實施例的所有發光二極體晶片1201塗覆有至少一種螢光材料1205。在一個或一組發光二極體晶片1201上施加一混合形式的螢光材料1205，將可自該等特定發光二極體晶片1201位置輸出一較 廣頻譜的光，以改良該照明裝置之視線範圍中色彩及色調的均勻性。如前所述，即便極端地使每一發光二極體晶片1201分別具有獨特的螢光材料1205的混合物(此表示，在每個發光二極體晶片1201頂端或頂部的螢光材料1205之混合物是獨一無二的，且不同於另一發光二極體晶片1201頂端或頂部的螢光材料1205之混合物)，該螢光材料1205的施加過程仍允許不同形式或混合不同形式的螢光材料1205施加於一發光二極體晶片1201的不同位置。即使在圖11及圖12所示之較佳實施例是使用2種波長之靛藍光及藍光發光二極體晶片1201，其他實施例也可僅使用單一種波長之藍光、靛藍光或紫光的發光二極體晶片1201，或使用2種波長以上的發光二極體晶片1201。類似地，螢光材料1205之混合物的種類數量也可低於或多於3種。 Referring to Figures 11 and 16, Figure 11 shows the spectrum of a light-emitting diode array 701 (see Figure 9) based on a preferred embodiment of the illumination device of the present invention, depicted in Figures 6-10. The LED array 701 includes two wavelengths of blue and blue light emitting diode chips 1201 (ie, 6A01, 6B01 in FIGS. 6 and 7), and has spectral peaks 9A01 and 9A02 substantially at 430 nm and 455 nm, respectively. . The light emitting diode wafer 1201 of the preferred embodiment is coated with three forms of phosphor material that absorbs light energy from one or both of the blue light emitting diode chips 1201 and emits substantially A wide spectrum of light in the range of green 9A03, yellow 9A04 and red 9A05. Referring to Figure 16, it is noted that all of the light emitting diode wafers 1201 of the preferred embodiment are coated with at least one phosphor material 1205. Applying a mixed form of phosphor material 1205 to one or a group of light emitting diode chips 1201, which can output a position from the specific light emitting diode chip 1201. A broad spectrum of light to improve the uniformity of color and hue in the line of sight of the illumination device. As previously mentioned, even though each of the light-emitting diode wafers 1201 is extremely uniquely provided with a mixture of unique phosphor materials 1205 (this represents a mixture of phosphor materials 1205 at the top or top of each of the light-emitting diode wafers 1201). Is unique and different from the mixture of phosphor material 1205 at the top or top of another LED array 1201), the application of the phosphor material 1205 still allows different forms or mixed different forms of phosphor material 1205 to be applied to Different positions of a light emitting diode chip 1201. Even though the preferred embodiment shown in Figures 11 and 12 uses two wavelengths of blue and blue light emitting diode chips 1201, other embodiments may use only a single wavelength of blue, blue or violet light. The diode wafer 1201 or the light-emitting diode wafer 1201 of two or more wavelengths is used. Similarly, the number of types of the mixture of the fluorescent materials 1205 may be less than or more than three.

組合藍光發光二極體晶片1201的波長及多種螢光材料1205所輸出光的光譜，將使得該光譜具有良好光譜填充力(在光譜中沒有深斷差)，並避免產生在特定波長範圍輸出過量的光所形成的「熱點」，進而接近理想黑體輻射的曲線9A06。實際上，在該較佳實施例的所有發光二極體晶片1201都塗覆有螢光材料1205，進而顯著地降低輸出過量之位於特定窄波長範圍的光，及避免在該窄波長範圍中形成光譜「熱點」(「熱點」通常會發生在未塗覆螢光材料的發光二極體晶片1101(如圖15))。亦即，多種波長之藍光(或多種藍光、靛藍光及/或紫光波長)發光二極體晶片1201的使用，皆是作為該等螢光材料1205之激 發光源，且與僅使用單一種藍光發光二極體晶片1201比較，也避免過量輸出的光集中於光譜之窄波長範圍。本發明的顯色指數易於超過95。經由螢光材料1205的細心選擇，及施加過程的細心控制，更可使顯色指數高達99。 Combining the wavelength of the blue light emitting diode chip 1201 with the spectrum of the light output by the plurality of phosphor materials 1205 will result in a good spectral fill force (no deep break in the spectrum) and avoid excessive output over a specific wavelength range. The "hot spot" formed by the light, and then close to the curve 9A06 of the ideal blackbody radiation. In fact, all of the light-emitting diode wafers 1201 of the preferred embodiment are coated with a phosphor material 1205, thereby significantly reducing the output of light in a particular narrow wavelength range and avoiding formation in the narrow wavelength range. The spectral "hot spot" ("hot spot" usually occurs in the light-emitting diode wafer 1101 (Fig. 15)) which is not coated with fluorescent material. That is, the use of a plurality of wavelengths of blue light (or a plurality of blue, blue, and/or violet wavelengths) of the light-emitting diode chip 1201 is used as the phosphor material 1205. The source of light is also compared to the use of a single blue light emitting diode chip 1201, and also avoids excessive output of light concentrated in the narrow wavelength range of the spectrum. The color rendering index of the present invention tends to exceed 95. Through the careful selection of the fluorescent material 1205 and the careful control of the application process, the color rendering index can be as high as 99.

雖然圖11所示的頻譜圖表示其色溫為4500K，但在圖11中所表示之該發光二極體陣列701(見圖9)之較佳實施例頻譜圖的色溫是固定或可調整的。配合參閱圖12，圖12所示之本發明較佳實施例的CIE圖也具有一條在不同色溫值時所繪示之理想黑體輻射曲線。 Although the spectrogram shown in Fig. 11 indicates that its color temperature is 4500K, the color temperature of the spectrogram of the preferred embodiment of the LED array 701 (see Fig. 9) shown in Fig. 11 is fixed or adjustable. Referring to Figure 12, the CIE diagram of the preferred embodiment of the present invention shown in Figure 12 also has an ideal blackbody radiation profile plotted at different color temperature values.

綜合上述，為了使發光二極體陣列701的較佳實施例在維持CIE坐標值或預定色溫值接近理想黑體輻射的曲線的條件下，更具有可調變的色溫，該陣列被設計成其發光二極體晶片串(或一組發光二極體晶片串)是可被各別控制的。每一各別控制之發光二極體晶片串或每組發光二極體晶片串將各自擁有CIE坐標，並可繪置於CIE圖上。藉由控制該等發光二極體晶片串(或該組發光二極體晶片串)的相對亮度，各個發光二極體晶片串的任何色彩或色調的坐標值可落在該CIE圖的範圍中。舉例來說，當有三組分別受控制的發光二極體晶片串，且每一發光二極體晶片串各自具有施加於其上的螢光材料混合物、其所擁有的色溫值，及於CIE圖上不同的坐標值時，任何預定的色溫值、色彩及色調都可產生，例如，最後發光的色彩坐標值會落在該三發光二極體晶片串之對應色彩坐標值所構成的三角形中。除了在本發明中具有其色彩坐標值未落在 接近黑體輻射曲線的各個發光二極體串外，此概念類似於多種落在RGB LED陣列的「色彩三角形」中之色彩的生成，因此，其可傾向具有一般白光之不同深淺及色調的視覺表現。所以，若本發明之較佳實施例的三個發光二極體晶片串的色彩坐標值皆繪製於該CIE圖上時，其最終形成的三角形相對來說較小(與RGB LED陣列的色彩三角形比較)，且將集中在理想黑體輻射曲線上。 In summary, in order to enable the preferred embodiment of the LED array 701 to have a variable color temperature while maintaining a CIE coordinate value or a predetermined color temperature value close to the curve of the ideal black body radiation, the array is designed to emit light. The diode chip strings (or a group of light emitting diode chips) can be individually controlled. Each individually controlled LED array or each set of LED strings will each have CIE coordinates and can be placed on the CIE map. By controlling the relative brightness of the light emitting diode chip strings (or the set of light emitting diode chip strings), the coordinate values of any color or hue of each of the light emitting diode chip strings may fall within the range of the CIE map. . For example, when there are three sets of separately controlled light emitting diode chip strings, and each light emitting diode chip string has a fluorescent material mixture applied thereto, the color temperature value possessed by it, and the CIE chart When a different coordinate value is applied, any predetermined color temperature value, color, and hue may be generated. For example, the color coordinate value of the last illumination may fall in a triangle formed by the corresponding color coordinate value of the three-light diode chip string. Except that in the present invention, its color coordinate value does not fall on Outside the string of individual LEDs close to the blackbody radiation curve, this concept is similar to the generation of a variety of colors that fall in the "color triangle" of an RGB LED array. Therefore, it can be inclined to have different shades and shades of general white light. . Therefore, if the color coordinate values of the three LED strings of the preferred embodiment of the present invention are all plotted on the CIE image, the resulting triangle is relatively small (with color triangles of the RGB LED array). Compare) and will focus on the ideal blackbody radiation curve.

需特別說明的是，本發明也可使用四個以上各別控制之發光二極體晶片串(其皆塗覆有螢光材料1205)。該等發光二極體晶片串被設置為使其CIE坐標值構成一橫跨黑體輻射曲線之矩形或平行四邊形。特別地，其中一發光二極體晶片串具有落在黑體輻射曲線的高色溫值端略上方的色彩坐標值(四邊形或平行四邊形的「左上方」角)。第二發光二極體晶片串具有落在黑體輻射曲線的高色溫值端略下方的色彩坐標值(四邊形或平行四邊形的「左下方」角)。類似地，第三及第四發光二極體晶片串具有圈圍黑體輻射曲線之低色溫值端的色彩坐標值。藉由改變該四發光二極體晶片串的強度及亮度，最終發光的坐標值可位於矩形或平行四邊形中之理想黑體輻射曲線上的任何預定色溫值。 It should be particularly noted that the present invention can also use four or more individually controlled light emitting diode wafer strings (all of which are coated with a fluorescent material 1205). The light emitting diode wafer strings are arranged such that their CIE coordinate values form a rectangular or parallelogram that traverses the black body radiation curve. In particular, one of the light emitting diode chip strings has a color coordinate value (a "top left" angle of a quadrangle or a parallelogram) that falls slightly above the high color temperature end of the black body radiation curve. The second light-emitting diode chip string has a color coordinate value (a "lower left" angle of a quadrangle or a parallelogram) that falls slightly below the high color temperature end of the black body radiation curve. Similarly, the third and fourth LED arrays have color coordinate values at the low color temperature end of the black body radiation curve. By varying the intensity and brightness of the four-emitting diode chip string, the final illuminating coordinate value can be any predetermined color temperature value on the ideal black body radiation curve in a rectangular or parallelogram.

在實施時，任何各別的發光二極體晶片串的色彩坐標值將具有某些變異；然而，透過將多種發光二極體晶片串色彩坐標值間隔足夠的距離(於其在CIE圖上的各個位置)，各個發光二極體晶片串的變異可藉由仔細地調 整該等發光二極體晶片串之強度或亮度而教正。為了提高最終光的顯色指數可高達95，各個發光二極體晶片串的顯色指數也必須是高的。除此之外，當盡可能具有多個發光二極體晶片串，且其各自具有不同的光譜時，經組合而輸出之光的顯色指數將高於各個發光二極體晶片串的顯色指數。 In practice, the color coordinate values of any individual light-emitting diode chip strings will have some variation; however, by separating the color coordinate values of the various light-emitting diode chip strings by a sufficient distance (on their CIE map) Each position), the variation of each LED string can be carefully adjusted The strength or brightness of the light-emitting diode chip strings is taught. In order to increase the color rendering index of the final light up to 95, the color rendering index of each of the LED strings must also be high. In addition, when there are as many light-emitting diode chip strings as possible, and each has a different spectrum, the color rendering index of the combined output light will be higher than the color rendering of each light-emitting diode chip string. index.

雖然本發明之發光二極體陣列701(見圖9)的發光區域的尺寸小，但其仍具有限的區域。這是由於該發光二極體陣列701包括各種波長的發光二極體晶片1201，且該等發光二極體晶片1201塗覆多種波長範圍的螢光材料1205，來自該陣列701表面之不同區域的輸出光的不同色彩也許仍會造成最終輸出之光或光束的色彩及色調不均勻。為了達到在該發光區域中其輸出光之色彩/色調之良好的均勻性與均質性，本發明發光二極體陣列701將被配置為各式發光二極體晶片1201及螢光材料1205分散於該陣列701的區域中，使得各式發光二極體晶片1201及螢光材料1205彼此混合。除此之外，該發光二極體陣列701沿數個軸而對稱，關於此配置的用意將於下段詳細地說明。簡言之，當配合例如光擴散器、光導管，及/或波紋狀反射器之二次光學元件共同使用時，該對稱性的配置可有效增加光束之色彩及色調的空間均勻性。 Although the light-emitting region of the light-emitting diode array 701 (see FIG. 9) of the present invention has a small size, it still has a limited area. This is because the LED array 701 includes light-emitting diode chips 1201 of various wavelengths, and the light-emitting diode chips 1201 are coated with fluorescent materials 1205 of various wavelength ranges from different regions of the surface of the array 701. The different colors of the output light may still result in uneven color and hue of the final output light or beam. In order to achieve good uniformity and homogeneity of the color/tone of the output light in the light-emitting region, the light-emitting diode array 701 of the present invention is configured such that the various light-emitting diode chips 1201 and the fluorescent material 1205 are dispersed. In the region of the array 701, the various types of light-emitting diode chips 1201 and the fluorescent material 1205 are mixed with each other. In addition, the LED array 701 is symmetrical along a plurality of axes, and the meaning of this configuration will be described in detail in the following paragraph. In short, when used in conjunction with secondary optics such as light diffusers, light pipes, and/or corrugated reflectors, this symmetrical configuration effectively increases the spatial uniformity of the color and hue of the beam.

參閱圖13及圖14，圖13及圖14表示本發明發光二極體陣列701(見圖9)的另一較佳實施例，在該較佳實施例中，該發光二極體陣列701使用共有二種波長的藍光及 靛藍光發光二極體晶片B、I，且該等發光二極體晶片B、I上分別塗覆有三種形式的磷光粉，因此其光譜圖會類似於圖11所繪製的圖式。圖13表示二種波長的發光二極體晶片B、I的排列，其中，「藍光」發光二極體晶片B的光譜峰值約於450-490nm的波長範圍中，而「靛藍光」發光二極體晶片I的光譜峰值約於410-450nm的波長範圍中。在實際使用時，所使用之特定波長也許會改變，但該較佳實施例之「藍光」發光二極體晶片B、I應具有約為455nm的光譜峰值，且「靛藍光」發光二極體晶片B應具有約為430nm的光譜峰值。需注意的是，「藍光」及「靛藍光」的發光二極體晶片B、I的位置是彼此混雜的，且在圖示中是沿著四個對稱軸：垂直軸V、水平軸H及該發光二極體陣列的二條對角線D1、D2，而形成四重對稱。換句話說，對每一發光二極體晶片B、I或每一發光二極體晶片B、I所發光之峰值波長而言，在四對稱軸V、H、D1、D2的兩側皆有相同數值之發光二極體晶片B、I所發光的峰值波長。詳細說明，所謂發光二極體晶片及螢光材料的四重對稱，其定義為在每一對稱軸的兩側有相同數量的同形式之晶片1201及螢光材料，包括垂直軸V、水平軸H及該發光二極體陣列的二條對角線D1、D2。換句話說，發光二極體晶片B、I的形式(或發光二極體發光峰值波長)及螢光材料的形式不需沿著該四個軸V、H、D1、D2形成鏡射。類似地，圖14中，共有三種螢光材料P1、P2、P3施加於每一發光二極體晶片B 、I(見圖13)的頂部。當然，該等螢光材料形式的數量可大於或小於三種，在本較佳實施例中僅是以三種做為說明。其中，螢光材料P1、P2，及P3分別具有於可見光譜之黃光、綠光及紅光區域的發光光譜。需注意的是，具有該等螢光材料P1、P2、P3形式的晶片B、I位置是混雜的，且其配置也是符合四重對稱的配置規則。在該較佳實施例中，所有螢光材料P1、P2、P3形式受任一該等發光二極體晶片B、I形式激發，並藉該發光二極體晶片B、I及螢光材料P1、P2、P3的配置而能提供極佳之光混合的均勻性及均質性。此外，藉由該發光二極體之照明裝置與一光擴散元件或其他二次光學元件相組合使用，亦能使得整體光學特性有所提升。 Referring to FIG. 13 and FIG. 14, FIG. 13 and FIG. 14 show another preferred embodiment of the LED array 701 (see FIG. 9) of the present invention. In the preferred embodiment, the LED array 701 is used. There are two wavelengths of blue light and The blue light-emitting diode wafers B, I, and the light-emitting diode wafers B, I are respectively coated with three forms of phosphor powder, so the spectrum thereof will be similar to the pattern drawn in FIG. Figure 13 shows an arrangement of two wavelengths of light-emitting diode wafers B, I, wherein the spectral peak of the "blue" light-emitting diode wafer B is in the wavelength range of about 450-490 nm, and the "blue light" light-emitting diode The spectral peak of the bulk wafer I is in the wavelength range of 410-450 nm. In actual use, the particular wavelength used may vary, but the "blue" LED chips B, I of the preferred embodiment should have a spectral peak of about 455 nm and a "blue light" LED. Wafer B should have a spectral peak of approximately 430 nm. It should be noted that the positions of the "Blu-ray" and "Blu-ray" LED chips B, I are intermingled with each other and are shown along the four axes of symmetry: the vertical axis V, the horizontal axis H, and The two diagonal lines D1, D2 of the array of light-emitting diodes form a quadruple symmetry. In other words, for the peak wavelength of the light emitted by each of the light-emitting diode wafers B, I or each of the light-emitting diode wafers B, I, there are two sides of the four symmetry axes V, H, D1, and D2. The peak wavelength of the light emitted by the LEDs B and I of the same value. DETAILED DESCRIPTION The so-called four-fold symmetry of a light-emitting diode wafer and a fluorescent material is defined as having the same number of wafers 1201 and fluorescent materials of the same form on both sides of each symmetry axis, including a vertical axis V and a horizontal axis. H and two diagonal lines D1, D2 of the array of light emitting diodes. In other words, the form of the light-emitting diode wafers B, I (or the peak wavelength of the light-emitting diode light emission) and the form of the fluorescent material need not be mirrored along the four axes V, H, D1, D2. Similarly, in FIG. 14, a total of three kinds of fluorescent materials P1, P2, and P3 are applied to each of the light-emitting diode wafers B. , I (see Figure 13) at the top. Of course, the number of such fluorescent material forms may be greater or less than three, and in the preferred embodiment only three are illustrated. Among them, the fluorescent materials P1, P2, and P3 respectively have luminescence spectra in the yellow, green, and red regions of the visible spectrum. It should be noted that the positions of the wafers B and I in the form of the phosphor materials P1, P2, and P3 are mixed, and the configuration thereof is also in accordance with the configuration rule of quadruple symmetry. In the preferred embodiment, all of the phosphor materials P1, P2, and P3 are excited by any of the light-emitting diode wafers B and I, and the light-emitting diode wafers B, I and the fluorescent material P1 are used. The P2 and P3 configurations provide excellent uniformity and homogeneity of light mixing. In addition, the use of the illumination device of the light-emitting diode in combination with a light diffusing element or other secondary optical element can also improve the overall optical characteristics.

回顧在圖6所示本發明之該較佳實施例，還需注意的是，對該陣列701(見圖9)之多數發光二極體晶片串而言，該等發光二極體晶片6A01的位置(以發光二極體晶片串的號碼標記於每一晶片6A01位置中)具有相對四個對稱軸V、H、D1、D2的對稱性。所有該等發光二極體晶片串成對地對稱，例如，相對該陣列的中心6A06，發光二極體晶片串1與發光二極體晶片串5成對地對稱，發光二極體晶片串2與發光二極體晶片串6成對地對稱，發光二極體晶片串3與發光二極體晶片串7成對地對稱，且發光二極體晶片串4與發光二極體晶片串10成對地對稱。相對該垂直軸，發光二極體晶片串1與發光二極體晶片串3成對地對稱，發光二極體晶片串2與發光二極體晶 片串4成對地對稱，發光二極體晶片串5與發光二極體晶片串7成對地對稱，且發光二極體晶片串6與發光二極體晶片串10成對地對稱。除此之外，每一發光二極體晶片串中發光二極體晶片6A01的位置對應其中一對角線對稱D1、D2軸而對稱。當維持對應該四個對稱軸V、H、D1、D2時，具有不同數量之發光二極體晶片6A01及不同數量之發光二極體晶片串的其他實施例也是可行的。 Recalling the preferred embodiment of the present invention shown in FIG. 6, it is also noted that for the plurality of light emitting diode chip strings of the array 701 (see FIG. 9), the light emitting diode chips 6A01 are The position (marked in the position of each wafer 6A01 with the number of the light-emitting diode wafer strings) has symmetry with respect to four symmetry axes V, H, D1, D2. All of the light emitting diode chip strings are symmetrically paired, for example, the light emitting diode chip string 1 and the light emitting diode chip string 5 are symmetrically paired with respect to the center 6A06 of the array, and the light emitting diode chip string 2 Symmetrically symmetrical with the LED array 6 of light-emitting diodes, the LED array 3 of light-emitting diodes is symmetrically paired with the LED strings 7 of the light-emitting diodes, and the LED strings 4 and the LED strings 10 are formed. Symmetrical to the ground. Relative to the vertical axis, the LED array 1 and the LED array 3 are symmetrically paired, and the LED array 2 and the LED are crystal-emitting diodes. The strings 4 are symmetrically paired, the light-emitting diode wafer strings 5 are symmetrically paired with the light-emitting diode wafer strings 7, and the light-emitting diode wafer strings 6 are symmetrically paired with the light-emitting diode wafer strings 10. In addition, the position of the light-emitting diode wafer 6A01 in each of the light-emitting diode wafer strings is symmetrical with respect to a pair of angular symmetry D1, D2 axes. Other embodiments having different numbers of light-emitting diode chips 6A01 and different numbers of light-emitting diode wafer strings are also possible while maintaining the four symmetric axes V, H, D1, D2.

參閱圖13及圖14本發明還提出可在各個發光二極體晶片B、I的頂部施加不同螢光材料P1、P2、P3，且該等發光二極體晶片B、I緊密地設置於一發光二極體陣列701中。該螢光材料P1、P2、P3(通常是單一螢光材料形式，或於某些實施例中是混合多螢光材料形式)混合至一矽凝膠材料中，該矽凝膠材料作為黏稠劑，且之後固化為固體。該矽凝膠有很高的黏性，且配置量易於控制，使得每一發光二極體晶片B、I透過矽凝膠而塗佈滿預定螢光材料P1、P2、P3，且不遮覆相鄰的發光二極體晶片B、I，其是由於鄰近的發光二極體晶片B、I需塗佈不同的螢光材料P1、P2、P3。市售可取得之用於封裝發光二極體晶片B、I的矽凝膠被設計成於可見光的波長範圍至紫外光的範圍中是透明的。該矽凝膠也可為了配合該等發光二極體晶片B、I表面光的提出率而設計成易於控制折射率，並於以下詳細地說明。 Referring to FIG. 13 and FIG. 14 , the present invention further provides that different phosphor materials P1, P2, and P3 can be applied on top of each of the LED chips B and I, and the LED chips B and I are closely disposed on one. In the LED array 701. The phosphor materials P1, P2, P3 (usually in the form of a single phosphor material, or in some embodiments in the form of a mixed multi-fluorescent material) are mixed into a gel material that acts as a viscosity agent. And then solidified to a solid. The ruthenium gel has high viscosity, and the arrangement amount is easy to control, so that each of the illuminating diode wafers B, I is coated with the predetermined phosphor materials P1, P2, P3 through the ruthenium gel, and is not covered. Adjacent light-emitting diode wafers B, I are due to the need to apply different phosphor materials P1, P2, P3 to adjacent light-emitting diode wafers B, I. Commercially available ruthenium gels for encapsulating light-emitting diode wafers B, I are designed to be transparent in the wavelength range of visible light to ultraviolet light. The ruthenium gel can also be designed to easily control the refractive index in order to match the ratio of the surface light of the light-emitting diode wafers B and I, and will be described in detail below.

參閱圖15，圖15表示本發明發光二極體陣列701(見圖9)之另一較佳實施例的部份剖視示意圖，並表示 數個發光二極體晶片1101在施加矽凝膠1204、1206(見圖16)及螢光材料1205(見圖16)前的剖視示意圖。需特別說明的是，圖15並未根據實際尺寸或比例繪製。而如前所述地，每一發光二極體晶片1101的寬度通常為1mm，但並不以此為限，其它不同之發光二極體晶片1101的尺寸也是可行的。該等晶片1101間的空隙或空間一般在100微米至數百微米間。該等發光二極體晶片1101為了達到高導熱力，而透過一金屬焊接材料1103黏置於一金屬電路板基板1102。該等箭頭符號表示來自該等發光二極體晶片1101的輸出光，只要該發光二極體晶片1101表面的入射角在藉由該發光二極體晶片1101的材質與外界空氣的相對折射率所界定之臨界角內，透過該等發光二極體晶片1101的主動發光磊晶層所發出的光即可自該等發光二極體晶片1101的頂面及側面行進至晶片1101邊界。若不深入地探究光學及物理理論，則最終效應是該等發光二極體晶片1101之主動發光磊晶層所發出大量的光被「侷限」於該發光二極體晶片1101中，這是由於在該等晶片1101表面與空界間的界面之內部反射所造成，圖15即是用以表示此現象的示意圖，而此一現象也將降低該等發光二極體晶片1101的發光效率，造成低光輸出亮及增加該發光二極體晶片1101內的廢熱生成。 Referring to FIG. 15, FIG. 15 is a partial cross-sectional view showing another preferred embodiment of the LED array 701 (see FIG. 9) of the present invention, and showing A schematic cross-sectional view of a plurality of light-emitting diode wafers 1101 prior to application of the ruthenium gels 1204, 1206 (see Figure 16) and the phosphor material 1205 (see Figure 16). It should be noted that Figure 15 is not drawn according to the actual size or scale. As described above, the width of each of the light-emitting diode wafers 1101 is usually 1 mm, but not limited thereto, and the sizes of other different light-emitting diode wafers 1101 are also feasible. The voids or spaces between the wafers 1101 are generally between 100 microns and hundreds of microns. The light-emitting diode wafer 1101 is adhered to a metal circuit board substrate 1102 through a metal solder material 1103 in order to achieve high thermal conductivity. The arrow symbols indicate the output light from the light-emitting diode wafers 1101 as long as the incident angle of the surface of the light-emitting diode wafer 1101 is based on the relative refractive index of the material of the light-emitting diode wafer 1101 and the outside air. Within the defined critical angle, light emitted by the active light-emitting epitaxial layers of the light-emitting diode wafer 1101 can travel from the top and sides of the light-emitting diode wafer 1101 to the boundary of the wafer 1101. If the optical and physical theory is not thoroughly explored, the final effect is that a large amount of light emitted by the active light-emitting epitaxial layer of the light-emitting diode wafer 1101 is "limited" to the light-emitting diode wafer 1101 because of The internal reflection of the interface between the surface of the wafer 1101 and the void, FIG. 15 is a schematic diagram showing the phenomenon, and this phenomenon will also reduce the luminous efficiency of the LEDs 1101, resulting in The low light output is bright and the waste heat generation in the light emitting diode wafer 1101 is increased.

除此之外，若一含有螢光材料1205(見圖16)的矽凝膠1206僅沉積於該等發光二極體晶片1101的頂部，則部分自該晶片1101側面所輸出的光將略過該矽凝膠1206 及該螢光材料1205。其將導致輸出過多該發光二極體晶片1101的波長，並降低自該螢光材料1205所發出的光，進而產生該發光二極體陣列701(見圖9)之光譜中的「熱點」，並使得顯色指示降低。其也導致該螢光材料1205之激發量降低，造成該螢光材料1205的發光量降低。 In addition, if a germanium gel 1206 containing a fluorescent material 1205 (see FIG. 16) is deposited only on top of the light emitting diode wafer 1101, part of the light output from the side of the wafer 1101 will be skipped. The enamel gel 1206 And the fluorescent material 1205. It will cause excessive output of the wavelength of the LED substrate 1101 and reduce the light emitted from the phosphor material 1205, thereby generating a "hot spot" in the spectrum of the LED array 701 (see FIG. 9). And the color display indication is lowered. It also causes the amount of excitation of the phosphor material 1205 to decrease, resulting in a decrease in the amount of light emitted by the phosphor material 1205.

如圖16所示，為了使得該發光二極體陣列701(見圖9)之整體光輸出量最大化，及避免於其上設置具有螢光材料1205的矽凝膠1206所形成之發光二極體晶片1201的空隙產生光譜「熱點」的問題，該矽凝膠1204及螢光材料1205利用2個步驟塗覆至本發明發光二極體陣列701。首先，先將不含螢光材料1205之透明的矽凝膠1204塗覆至該等發光二極體晶片1202間的區域，並填充到至少與該等發光二極體晶片1201的頂面高度齊平。為了使經由該等發光二極體晶片1201側壁進入該透明矽凝膠1204的出光量最大化，該透明的矽凝膠1204是選自高折射係數的材料，且該該透明的矽凝膠1204之折射係數較接近該等發光二極體晶片1201之半導體材料的折射係數，且較遠離空氣的折射係數。接著，伴隨著該透明矽凝膠1206之多種形式的螢光材料1205分別被塗覆至該等預定發光二極體晶片1201的表面。其中一種螢光材料1205先塗覆於相對少量的晶片1201上，最後再塗覆另一螢光材料1205於大量的晶片1201位置上。然而，塗覆不同螢光材料1205的順序並不重要。當塗覆最後一種螢光材料1205時，需調整矽凝膠1206(含有螢光材料1205於其中)量，以確保覆蓋滿包括區域之該發光二 極體陣列701的表面，其中，該等發光二極體晶片1201間之間隙已於前填充不含螢光材料1205的透明矽凝膠1204，使得該等發光二極體晶片1201間的間隙不復存在。換句話說，所塗覆之該矽凝膠1206(含有螢光材料1205於其中)也覆蓋於已填充於該等發光二極體晶片1201間的不含螢光材料1205的透明矽凝膠1204上，使得塗覆於該等發光二極體晶片1201表面上或上方之該矽凝膠1206(含有螢光材料1205於其中)實質沒有間隙。 As shown in FIG. 16, in order to maximize the overall light output of the light-emitting diode array 701 (see FIG. 9), and avoid the light-emitting diode formed by the germanium gel 1206 having the fluorescent material 1205 disposed thereon. The voids of the bulk wafer 1201 create a problem of spectral "hot spots" which are applied to the light-emitting diode array 701 of the present invention in two steps. First, a transparent germanium gel 1204 containing no fluorescent material 1205 is first applied to a region between the light emitting diode wafers 1202 and filled to at least the top surface of the light emitting diode wafer 1201. level. In order to maximize the amount of light entering the transparent tantalum gel 1204 through the sidewalls of the light emitting diode wafers 1201, the transparent tantalum gel 1204 is selected from a material having a high refractive index, and the transparent tantalum gel 1204 The refractive index is closer to the refractive index of the semiconductor material of the light-emitting diode wafer 1201 and is farther from the refractive index of the air. Next, various forms of phosphor material 1205 accompanying the transparent tantalum gel 1206 are applied to the surfaces of the predetermined light emitting diode wafers 1201, respectively. One of the phosphor materials 1205 is first applied to a relatively small amount of wafer 1201, and finally another phosphor material 1205 is applied to a plurality of wafers 1201. However, the order in which the different phosphor materials 1205 are applied is not critical. When the last fluorescent material 1205 is applied, the amount of the ruthenium gel 1206 (containing the fluorescent material 1205 therein) needs to be adjusted to ensure that the luminescent layer 2 is covered. The surface of the polar body array 701, wherein the gap between the LED chips 1201 is filled with the transparent germanium gel 1204 without the fluorescent material 1205, so that the gap between the LED chips 1201 is not Reappear. In other words, the coated ruthenium gel 1206 (containing the fluorescent material 1205 therein) also covers the transparent ruthenium gel 1204 containing no fluorescent material 1205 filled between the luminescent diode wafers 1201. The tantalum gel 1206 (containing the phosphor material 1205 therein) coated on or above the surface of the light emitting diode wafer 1201 is substantially free of gaps.

在圖16所示之實線箭頭表示自該等發光二極體晶片1201所發出的光。虛線線頭表示自該矽凝膠1206的頂層中之螢光材料1205所發出的光。如圖16所示，該螢光材料1205及矽凝膠1204、1206的施加過程使得發光二極體晶片1201的光進入含有螢光材料1205的矽凝膠1206材料中的傳送能力佳，進而使得自該螢光材料1205的輸出光量最大化。部分由該等發光二極體晶片1201發出的光穿經具有螢光材料1205之矽凝膠1206區域，進而提升該發光二極體陣列701(見圖9)的整體光譜。然而，由於本發明可避免於該螢光材料1205的矽凝膠1206中產生空隙及孔洞，從而將該發光二極體晶片1201之波長的光譜「熱點」最小化，其有助於兼顧本發明發光二極體陣列所輸出光的高效率，及高色彩/色調均勻性及均質性。需注意的是，該金屬電路基板1202的表面1207，及該等發光二極體晶片1201下方之該金屬焊接層1203，應都可反射可見光，使得朝向下方的光將大量地被反射而朝上，既而有效提升該發光二極體陣列 701之整體出光量。 The solid arrows shown in FIG. 16 indicate the light emitted from the light-emitting diode wafers 1201. The dotted line head indicates the light emitted from the phosphor material 1205 in the top layer of the tantalum gel 1206. As shown in FIG. 16, the application process of the fluorescent material 1205 and the ruthenium gels 1204, 1206 enables the light of the luminescent diode wafer 1201 to enter the 矽 gel 1206 material containing the fluorescent material 1205, thereby making it possible to The amount of light output from the phosphor material 1205 is maximized. A portion of the light emitted by the light-emitting diode wafers 1201 passes through the area of the germanium gel 1206 having the fluorescent material 1205, thereby enhancing the overall spectrum of the light-emitting diode array 701 (see FIG. 9). However, since the present invention can avoid voids and holes in the ruthenium gel 1206 of the phosphor material 1205, thereby minimizing the spectral "hot spot" of the wavelength of the luminescent diode chip 1201, which contributes to the consideration of the present invention. High efficiency of light output from the LED array, and high color/tone uniformity and homogeneity. It should be noted that the surface 1207 of the metal circuit substrate 1202 and the metal solder layer 1203 under the LED chip 1201 should reflect visible light, so that the downwardly directed light will be reflected a large amount upwards. , effectively improving the array of light-emitting diodes The overall amount of light emitted by 701.

為了改變本發明發光二極體之照明裝置的色溫，必須在該發光二極體陣列701中提供可獨立地控制多數電流通道或多數發光二極體串的控制電路。如圖6、圖13及圖14所示，本發明該發光二極體陣列701(見圖9)的多數發光二極體電流通道或發光二極體串整合具有不同波長的發光二極體晶片6A01、及具有不同發光光譜的螢光材料P1、P2、P3。當獨立地驅動時，該等發光二極體電流通道或發光二極體串將具備不同的色溫值。藉由選擇該等發光二極體電流通道或發光二極體串的相對亮度，組合輸出光的色溫值是可於大範圍區域中調整。 In order to change the color temperature of the illumination device of the light-emitting diode of the present invention, it is necessary to provide a control circuit in the light-emitting diode array 701 that can independently control a plurality of current channels or a plurality of light-emitting diode strings. As shown in FIG. 6, FIG. 13 and FIG. 14, a plurality of LED current channels or LED strings of the LED array 701 (see FIG. 9) of the present invention are integrated with LEDs having different wavelengths. 6A01, and fluorescent materials P1, P2, and P3 having different luminescence spectra. When independently driven, the light emitting diode current channels or light emitting diode strings will have different color temperature values. By selecting the relative brightness of the light-emitting diode current channels or the light-emitting diode strings, the color temperature values of the combined output light can be adjusted over a wide range of regions.

圖17表示用於本發明發光二極體之照明裝置之一控制電路的一較佳實施例。在該實施例中，該發光二極體陣列701(見圖9)之該等發光二極體電流通道或發光二極體串1301被組合成四個發光二極體驅電路，並具有一對去改變二組驅動電路之亮度的手動控制鈕(即圖17中之亮度控制鈕)。利用連接或配置具有高色溫值之該等發光二極體電流通道或發光二極體串1301，使得其可被其中一個手動控制鈕控制，並連接具有高色溫值之該等發光二極體電流通道或發光二極體串1301，使得其可被其中之另一手動控制鈕控制，進而達到整體色溫值可於該發光二極體陣列之二個各別控制組之色溫值間的任何一個值。對一個設計控制電路技術領域的人士而言，嵌入不同的驅動電路及用於本發明實施例的控制系統是熟習的技術，以產生具有不 同數量之發光二極體晶片6A01(見圖6)的陣列、不同數量之各別控制之發光二極體電流通道或發光二極體串1301，及多數不同波長之發光二極體晶片6A01(見圖6)及螢光材料P1、P2、P3(見圖14)形式的不同配置方式。 Fig. 17 shows a preferred embodiment of a control circuit for a lighting device for a light-emitting diode of the present invention. In this embodiment, the light emitting diode current channels or the light emitting diode strings 1301 of the light emitting diode array 701 (see FIG. 9) are combined into four light emitting diode driving circuits and have a pair. A manual control button (i.e., the brightness control button in Fig. 17) for changing the brightness of the two sets of driving circuits. By connecting or configuring the light emitting diode current channels or the light emitting diode strings 1301 having a high color temperature value, such that they can be controlled by one of the manual control buttons and connected to the light emitting diode currents having a high color temperature value. a channel or LED string 1301 such that it can be controlled by another of the manual controls to achieve any value between the overall color temperature values and the color temperature values of the two respective control groups of the array of LEDs . For those skilled in the art of designing control circuits, embedding different drive circuits and control systems for embodiments of the present invention is a familiar technique to produce An array of the same number of LED chips 6A01 (see FIG. 6), a different number of individually controlled LED current channels or LED strings 1301, and a plurality of different wavelength LED chips 6A01 ( See Figure 6) and the different configurations of the fluorescent materials P1, P2, P3 (see Figure 14).

圖18表示用於本發明發光二極體之照明裝置之一控制電路的另一較佳實施例。在該實施例中，一微控制器用於控制四個發光二極體驅動電路。該微控制器可轉換及接收來自多數不同輸入形式的控制輸入訊號，其中，不同輸入形式指的是包括一個以上的狀態選擇開關、一個以上的亮度控制鈕，或無線控制界面。利用來自一個以上的控制界面的資料，該微控制器控制多數發光二極體驅動電路的亮度，使得該發光二極體之照明裝置的整體亮度及色溫都可被決定。 Fig. 18 shows another preferred embodiment of a control circuit for a lighting device for a light-emitting diode of the present invention. In this embodiment, a microcontroller is used to control the four LED driving circuits. The microcontroller can convert and receive control input signals from a plurality of different input forms, wherein different input forms refer to more than one state selection switch, more than one brightness control button, or a wireless control interface. Using data from more than one control interface, the microcontroller controls the brightness of the majority of the LED driving circuitry such that the overall brightness and color temperature of the illumination device of the LED can be determined.

於圖18中所示為本發明發光二極體之照明裝置的其中一個電子控制的較佳實施例，或使用其他種類的電子控制方式，本發明發光二極體陣列701之組合輸出光的色溫可於2500K至6500K之間做調整，既而橫跨自鎢絲白熾燈炮至自然光的色溫範圍。藉由具有於部份發光二極體電流通道或發光二極體串1401中之較高密度的紅光螢光材料，以產生具有2500K之色溫值的光，及於部份發光二極體電流通道或發光二極體串1401中之較高密度的綠光螢光材料(及部分黃光螢光材料)，以產生具有6500K之色溫值的光。即便是更大範圍的色溫值也是可行的，舉例來說，自2000K至10000K，並使用於該藍光及靛藍光發光二 極體晶片6A01(見圖6)之上之少量的螢光材料P1、P2、P3(見圖14)，以達到1000K之色溫值，進而產生較多的藍光。然而，較大的色溫範圍將會降低任一色溫值的最大光輸出量。且在大多數應用於攝影、錄影，及電影領域之光源的色溫範圍通常是在2500K至6500K的範圍中。 18 is a preferred embodiment of one of the electronic controls of the illumination device of the present invention, or the color temperature of the combined output light of the LED array 701 of the present invention using other types of electronic control methods. It can be adjusted from 2500K to 6500K, spanning from the tungsten incandescent bulb to the color temperature range of natural light. By generating a higher density red fluorescent material in a portion of the light emitting diode current channel or the light emitting diode string 1401 to generate light having a color temperature value of 2500 K and a partial light emitting diode current The higher density green phosphor material (and a portion of the yellow fluorescent material) in the channel or light emitting diode string 1401 produces light having a color temperature value of 6500K. Even a wider range of color temperature values is possible, for example, from 2000K to 10000K, and is used for the blue and blue light-emitting diodes. A small amount of phosphor material P1, P2, P3 (see FIG. 14) above the polar body wafer 6A01 (see FIG. 6) is used to achieve a color temperature value of 1000 K, thereby generating more blue light. However, a larger color temperature range will reduce the maximum light output of any color temperature value. And the color temperature range of most light sources used in photography, video, and film fields is usually in the range of 2500K to 6500K.

如上所述，為了確保最終組合輸出光於CIE圖上的色彩坐標值接近或落在理想黑體輻射曲線，對所有預定的色溫值而言，其通常需要至少三個或四個以上各別控制的發光二極體串，並分別具有圍繞並括及黑體輻射曲線上之預定色溫範圍的色彩坐標值。其將允許個別發光二極體串之色彩坐標值中的某些變異。 As described above, in order to ensure that the color coordinate values of the final combined output light on the CIE map approach or fall on the ideal black body radiation curve, it usually requires at least three or more separate controls for all predetermined color temperature values. The light-emitting diode strings respectively have color coordinate values surrounding a predetermined color temperature range on the black body radiation curve. It will allow for some variation in the color coordinate values of the individual light-emitting diode strings.

因此，本發明發光二極體陣列701的所有發光二極體電流通道或發光二極體串1301、1401是利用混合一個以上波長的發光二極體晶片6A01、6B01及多數螢光材料P1、P2、P3形式而實施，進而在整個色溫調整範圍下維持極高的顯色指數。其比較使用紅光發光二極體晶片6A01、6B01去暖化輸出光及調整色溫值的習知方法。調整或改變色溫值的習知方法，也就是簡易地利用增加紅光發光二極體晶片調整色溫值，造成光譜「熱點」的產生，反而得到較差的顯色指數。 Therefore, all of the light-emitting diode current channels or the light-emitting diode strings 1301 and 1401 of the light-emitting diode array 701 of the present invention utilize a light-emitting diode chip 6A01, 6B01 and a plurality of fluorescent materials P1 and P2 which are mixed with one or more wavelengths. It is implemented in the form of P3, and maintains an extremely high color rendering index over the entire color temperature adjustment range. A conventional method of de-warming the output light and adjusting the color temperature value using the red light-emitting diode chips 6A01, 6B01 is compared. A conventional method of adjusting or changing the color temperature value, that is, simply adjusting the color temperature value by increasing the red light emitting diode chip, resulting in the generation of a spectral "hot spot", and instead obtaining a poor color rendering index.

惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。 The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.

6A01‧‧‧發光二極體晶片 6A01‧‧‧Light Emitter Wafer

6A02‧‧‧電連接器 6A02‧‧‧Electrical connector

6A06‧‧‧中心 6A06‧‧ Center

V‧‧‧垂直軸 V‧‧‧ vertical axis

H‧‧‧水平軸 H‧‧‧ horizontal axis

D1‧‧‧對角線 D1‧‧‧ diagonal

D2‧‧‧對角線 D2‧‧‧ diagonal

Claims (24)

一種照明裝置，包含：一發光二極體陣列，具有嵌置於一基板且彼此緊臨的多數發光二極體晶片，該發光二極體陣列包括三個以上以該等發光二極體晶片構成的發光二極體串，其中，該等發光二極體串發出選自藍光、靛藍光、紫光，及此等之一組合之一種以上波長的光，且具有小於490nm的峰值波長；多數發光材料，設置於該發光二極體陣列的每個發光二極體晶片上，該等發光材料分別發出波長大於該等發光二極體晶片所發出的光波長且波長範圍相異的光，來自該等發光材料的光是響應於自該等發光二極體晶片所發出的光；一控制電路，適用於該等發光二極體串的電流，使得該等發光二極體串發出供該等發光材料發光的光；一使用者界面，供使用者控制施加於該控制電路至該等發光二極體串的電流以達到使用者預定的色溫值及色調，且具有落在或接近一黑體輻射曲線的CIE坐標值。 An illumination device comprising: an array of light-emitting diodes having a plurality of light-emitting diode chips embedded in a substrate and adjacent to each other, the light-emitting diode array comprising three or more of the light-emitting diode chips Light-emitting diode strings, wherein the light-emitting diode strings emit light of one or more wavelengths selected from the group consisting of blue light, blue light, violet light, and the like, and have a peak wavelength of less than 490 nm; most of the light-emitting materials Provided on each of the light-emitting diode chips of the light-emitting diode array, the light-emitting materials respectively emitting light having a wavelength greater than a wavelength of light emitted by the light-emitting diode chips and having a different wavelength range. The light of the luminescent material is responsive to light emitted from the illuminating diode chips; a control circuit is adapted for the currents of the illuminating diode strings such that the illuminating diode strings are emitted for the luminescent materials Illuminating light; a user interface for the user to control the current applied to the control circuit to the string of light emitting diodes to achieve a predetermined color temperature value and color tone of the user, and having a falling or receiving CIE coordinate values of a blackbody radiation curve. 如請求項1所述之照明裝置，其中，該等發光二極體串分別發出不同峰值波長的光。 The illuminating device of claim 1, wherein the illuminating diode strings respectively emit light of different peak wavelengths. 如請求項1所述之照明裝置，其中，該等發光材料分別發出不同波長範圍的光。 The lighting device of claim 1, wherein the luminescent materials respectively emit light of different wavelength ranges. 如請求項3所述之照明裝置，其中，該等發光材料具有 不同的發光光譜，並具有不同發光光譜的發光材料的混合物，且分別配置於該陣列中的不同發光二極體晶片上。 The lighting device of claim 3, wherein the luminescent materials have Different luminescence spectra, and mixtures of luminescent materials having different luminescence spectra, are respectively disposed on different luminescent diode wafers in the array. 如請求項1所述之照明裝置，其中，該等發光材料包括螢光材料或量子點。 The illumination device of claim 1, wherein the luminescent materials comprise fluorescent materials or quantum dots. 如請求項1所述之照明裝置，其中，該等發光二極體串中的其中一個連同該等發光材料的發光二極體串所輸出的光具有一第一色溫值及第一CIE坐標值，該等發光二極體串中的其中另一個連同該等發光材料的發光二極體串所輸出的光具有一第二色溫值及第二CIE坐標值，且第二色溫值異於第一色溫值，第二CIE坐標值異於第一CIE坐標值，此外該等發光二極體串中的其中至少一個發光二極體串所輸出的光具有一額外色溫值及一額外CIE值，且該額外色溫值異於該第一色溫值及該第二色溫值，該額外CIE值異於該第一CIE值及該第二CIE值，以致於控制施加至該等發光二極體串的電流幅度，進而使該照明裝置整體輸出的光具有預定色溫值及預定CIE值。 The illumination device of claim 1, wherein the light output by one of the light emitting diode strings together with the light emitting diode strings of the light emitting materials has a first color temperature value and a first CIE coordinate value. The light output by the other of the light emitting diode strings together with the light emitting diode strings of the light emitting materials has a second color temperature value and a second CIE coordinate value, and the second color temperature value is different from the first a color temperature value, the second CIE coordinate value is different from the first CIE coordinate value, and the light output by at least one of the light emitting diode strings has an additional color temperature value and an additional CIE value, and The additional color temperature value is different from the first color temperature value and the second color temperature value, the additional CIE value being different from the first CIE value and the second CIE value, so as to control the current applied to the light emitting diode strings The amplitude, and thus the light output by the illumination device as a whole, has a predetermined color temperature value and a predetermined CIE value. 如請求項6所述之照明裝置，其中，該使用者界面包括2個以上的控制鈕，該等控制鈕分別藉由控制施加至該等發光二極體串的電流幅度，以改變該照明裝置所輸出的光的色溫值及色調。 The lighting device of claim 6, wherein the user interface comprises two or more control buttons, wherein the control buttons respectively change the magnitude of the current applied to the strings of the light emitting diodes to change the lighting device The color temperature value and hue of the output light. 如請求項1所述之照明裝置，其中，該照明裝置的顯色指數不小於95。 The lighting device of claim 1, wherein the lighting device has a color rendering index of not less than 95. 如請求項1所述之照明裝置，其中，在該發光二極體陣列中之不同波長的該等發光二極體晶片是沿多個正交軸及與該等正交軸成45度角之對角線軸對稱地設置，則對於該發光二極體陣列之每一峰值波長的發光二極體晶片而言，在該等正交軸及該等對角線軸的兩側皆有相同數量之具有如此之峰值波長的發光二極體晶片。 The illumination device of claim 1, wherein the light-emitting diode chips of different wavelengths in the array of light-emitting diodes are along a plurality of orthogonal axes and at an angle of 45 degrees to the orthogonal axes The diagonal axis is symmetrically disposed, and for each of the peak wavelengths of the light emitting diode array, the same number of the orthogonal axes and the diagonal axes have the same number of Such a peak wavelength of a light-emitting diode wafer. 如請求項1所述之照明裝置，其中，具有不同光譜之不同的發光材料是沿著多個正交軸及與該等正交軸成45度角之對角線軸對稱地設置，則對於具有特定輸出光譜的每一發光材料而言，在該等正交軸及該等對角線軸的兩側皆有相同數量的沉積有如此之發光材料的發光二極體晶片。 The illumination device of claim 1, wherein the different luminescent materials having different spectra are symmetrically disposed along a plurality of orthogonal axes and diagonally at an angle of 45 degrees to the orthogonal axes, For each luminescent material of a particular output spectrum, there are the same number of luminescent diode wafers with such luminescent material deposited on both sides of the orthogonal axes and the diagonal axes. 如請求項1所述之照明裝置，其中，該發光二極體陣列具有一個中心，及二條對稱軸，該發光二極體陣列之該等發光二極體串是相對於該發光二極體陣列的中心而被成對地配置，且其中每一發光二極體串之發光二極體晶片位置是沿著其中一條該發光二極體陣列的該等對稱軸對稱地配置。 The illuminating device of claim 1, wherein the illuminating diode array has a center and two symmetry axes, and the illuminating diode array of the illuminating diode array is opposite to the illuminating diode array The centers are arranged in pairs, and the position of the light-emitting diode of each of the light-emitting diode strings is symmetrically arranged along one of the axes of symmetry of the array of light-emitting diodes. 如請求項1所述之照明裝置，其中，該等發光二極體晶片是彼此相間隔，該發光裝置還包含一沉積並填充於該等發光二極體晶片間之間隙的透光材料。 The illuminating device of claim 1, wherein the illuminating diode chips are spaced apart from each other, the illuminating device further comprising a light transmissive material deposited and filled in a gap between the illuminating diode wafers. 如請求項12所述之照明裝置，其中，該透光材料包括矽凝膠。 The illumination device of claim 12, wherein the light transmissive material comprises a ruthenium gel. 如請求項12所述之照明裝置，其中，該透光材料不含 發光材料。 The lighting device of claim 12, wherein the light transmissive material does not contain Luminescent material. 如請求項12所述之照明裝置，其中，該透光材料具有一較空氣折射係數高的折射係數，且該透光材料的折射系數接近該發光二極體晶片之半導體材料的折射係數。 The illuminating device of claim 12, wherein the light transmissive material has a refractive index higher than an air refractive index, and the refractive index of the light transmissive material is close to a refractive index of the semiconductor material of the light emitting diode chip. 如請求項12所述之照明裝置，其中，至少部分該等發光材料於一凝膠中，且設置於該透光材料上方。 The illuminating device of claim 12, wherein at least a portion of the luminescent materials are in a gel and disposed over the light transmissive material. 如請求項15所述之照明裝置，其中，該等發光材料於一凝膠中，且沉積於該發光二極體陣列中之該等發光二極體晶片的頂部或上方，以及該透光材料的頂部或上方，使得該等具有不同光譜的發光材料分別位於該等發光二極體晶片上方。 The illuminating device of claim 15, wherein the luminescent materials are in a gel and are deposited on top or above the luminescent diode wafers in the array of light emitting diodes, and the light transmissive material The top or the top is such that the luminescent materials having different spectra are respectively located above the illuminating diode wafers. 如請求項17所述之照明裝置，其中，該等不同發光材料混合於該凝膠中，且混合於該凝膠中的該等發光材料分別設置於該等發光二極體晶片上方。 The illuminating device of claim 17, wherein the different luminescent materials are mixed in the gel, and the luminescent materials mixed in the gel are respectively disposed above the illuminating diode wafers. 如請求項17所述之照明裝置，其中，於不同凝膠中之該等不同的發光材料被分別設置於該等發光二極體晶片上方。 The illuminating device of claim 17, wherein the different luminescent materials in different gels are respectively disposed above the illuminating diode wafers. 一照明裝置，包含：一基板；一發光二極體陣列，位於該基板上，該發光二極體陣列包括三串以上之分別具有多數個未封裝之發光二極體晶片之發光二極體晶片串，其中，該等發光二極體晶片串發出選自不同波長範圍之藍光、靛藍光、紫光，及此等之一組合，並具有小於490nm的峰值波長； 多數具有不同輸出光譜的發光材料，位於該發光二極體陣列的該等發光二極體晶片上，其輸出的光是響應於自該等發光二極體晶片所發出的光，該等發光材料的發光波長範圍大於該等發光二極體晶片所發出光的波長；一控制電路，施加電流至該等發光二極體晶片串，使該等發光二極體晶片發光，該等發光二極體晶片的光使得該等發光材料發光，其中，具有發光材料於其上之該等發光二極體晶片串所發出的光分別具有不同的色溫值、不同的色調，及不同的CIE坐標值；及一使用者界面，供使用者控制利用該控制電路施加至該等發光二極體串的電流，以達到使用者預定的色溫值、色調及CIE值，該預定的CIE值位於該等發光二極體晶片串的CIE值間，且該照明裝置的色溫值、色調及CIE值接近或位於一黑體輻射曲線上。 An illumination device comprising: a substrate; an array of light emitting diodes on the substrate, the array of light emitting diodes comprising three or more light emitting diode chips each having a plurality of unpackaged light emitting diode chips a string, wherein the light emitting diode chips emit a combination of blue light, blue light, violet light, and the like selected from different wavelength ranges, and have a peak wavelength of less than 490 nm; a plurality of luminescent materials having different output spectra are disposed on the illuminating diode chips of the illuminating diode array, and the output light is responsive to light emitted from the illuminating diode chips, the luminescent materials The wavelength of the emitted light is greater than the wavelength of the light emitted by the light emitting diode chips; a control circuit applies a current to the strings of the light emitting diodes to cause the light emitting diodes to emit light, and the light emitting diodes The light of the wafer causes the luminescent materials to emit light, wherein the light emitted by the luminescent diode chip having the luminescent material thereon has different color temperature values, different hues, and different CIE coordinate values; a user interface for the user to control the current applied to the LED strings by the control circuit to achieve a predetermined color temperature value, hue, and CIE value of the user, the predetermined CIE value being located at the LEDs The CIE value of the body wafer string, and the color temperature value, hue and CIE value of the illumination device are close to or located on a black body radiation curve. 如請求項20所述之照明裝置，其中，該等發光二極體晶片彼此相間隔，該發光裝置還包含一沉積於該基板上且位於該等發光二極體晶片間之間隙的透光材料，該等發光材料於一凝膠中，且沉積於該發光二極體陣列之該等發光二極體晶片的頂部或上方，該等發光材料也位於該透光材料的頂部或上方，使得具有不同光譜之該等發光材料分別設於該等發光二極晶片之上。 The illuminating device of claim 20, wherein the illuminating diode chips are spaced apart from each other, the illuminating device further comprising a light transmissive material deposited on the substrate and located in a gap between the illuminating diode wafers The luminescent materials are deposited in a gel and deposited on top of or above the light-emitting diode wafers of the array of light-emitting diodes, and the luminescent materials are also located on top or above the light-transmitting material, so that The luminescent materials of different spectra are respectively disposed on the illuminating diode chips. 如請求項20所述之照明裝置，其中，該等不同發光材料混合於一凝膠中，使得該等發光材料彼此混合地設置 於該等發光二極體晶片之上。 The illuminating device of claim 20, wherein the different luminescent materials are mixed in a gel such that the luminescent materials are mixed with each other Above the light emitting diode wafers. 如請求項20所述之照明裝置，其中，混合於該凝膠中之該等不同的發光材料被分別設置於該等發光二極體晶片上方。 The illuminating device of claim 20, wherein the different luminescent materials mixed in the gel are disposed above the illuminating diode wafers, respectively. 如請求項20所述之照明裝置，其中，該照明裝置的顯色指示不小於95。 The lighting device of claim 20, wherein the lighting device has a color rendering indication of not less than 95.