TWI550647B - Non-linear impendance material - Google Patents
Non-linear impendance material Download PDFInfo
- Publication number
- TWI550647B TWI550647B TW102143952A TW102143952A TWI550647B TW I550647 B TWI550647 B TW I550647B TW 102143952 A TW102143952 A TW 102143952A TW 102143952 A TW102143952 A TW 102143952A TW I550647 B TWI550647 B TW I550647B
- Authority
- TW
- Taiwan
- Prior art keywords
- particles
- powder
- insulating
- resistivity
- impedance material
- Prior art date
Links
Landscapes
- Thermistors And Varistors (AREA)
Description
本發明是有關於一種非線性阻抗材料,且特別是有關於一種高電阻率的粉末,本發明的非線性阻抗材料能抑制瞬間的高壓突波,提升對電壓突波敏感之電子設備的可靠度。 The present invention relates to a nonlinear impedance material, and more particularly to a high resistivity powder, the nonlinear impedance material of the present invention can suppress transient high voltage surges and improve the reliability of electronic devices sensitive to voltage surges. .
積體電路的應用在現今的科技產業愈來愈重要,尤其在行動與通信裝置的產業。行動裝置講究的是如何節能,因為行動裝置的電源依賴著電池系統,現今的電池技術在行動裝置上受到空間限制,所以電池的尺寸也受到相當的限制,在尺寸不變的情況下,需提升電池容量,是現今電池產業的發展方向。不幸的是,行動裝置在觸控顯示螢幕上的要求,卻是愈來愈高,以致於耗電量不降反升,所以就要求系統晶片產商要降低耗電量與降低生產成本,因此積體電路的設計與製程不斷的想辦法降低耗電量與提升單片晶圓的產出量,如此的需求使得系統晶片產商也要求晶圓代工廠必須提升製程能力(如28奈米、20奈米、15奈米製程),如此在積體電路的輸入與輸出端的閘極厚度就愈來愈薄,以致於系統晶片更容易受到EOS與ESD的損壞。 The application of integrated circuits is becoming more and more important in today's technology industry, especially in the mobile and communications industries. The mobile device pays attention to how to save energy, because the power of the mobile device depends on the battery system. Today's battery technology is limited in space on the mobile device, so the size of the battery is also limited, and the size needs to be improved. Battery capacity is the development direction of the battery industry today. Unfortunately, the requirements for mobile devices on touch-screens are getting higher and higher, so that power consumption is not falling, so system chip manufacturers are required to reduce power consumption and reduce production costs. The design and process of integrated circuits continue to find ways to reduce power consumption and increase the output of single-chip wafers. This demand has made system wafer manufacturers also require wafer foundries to improve process capability (such as 28 nm, The 20 nm, 15 nm process), the thickness of the gate at the input and output of the integrated circuit is getting thinner and thinner, so that the system chip is more susceptible to damage by EOS and ESD.
電壓突波(如:靜電)是存在現實環境的,現今有許多的資料(或訊號)傳輸介面,允許使用者熱插拔(hot insertion and removal),如此將增 加電壓突波(如:靜電)進入系統晶片的機率。如何降低電壓突波對積體電路的損壞,一直是系統廠商與晶片製造商努力的方向,它是破壞電子產品可靠度的因素之一,如何使用適當的設計來達到保護的功能又能降低成本,是一個重要的課題。目前設計的方式一是將靜電抑制線路設計在晶片的輸出入端,一是使用外部靜電抑制元件來保護晶片。以目前晶片設計的趨勢,將ESD抑制線路設計在晶片裡是愈來愈不可行(因成本太高),使用外部靜電抑制元件是未來的趨勢。 Voltage surges (such as static electricity) are in a real-world environment. There are many data (or signal) transmission interfaces available today that allow users to hot insert and remove. The probability of adding a voltage surge (such as static electricity) into the system wafer. How to reduce the voltage surge on the integrated circuit has always been the direction of system manufacturers and chip manufacturers. It is one of the factors that damage the reliability of electronic products. How to use appropriate design to achieve the protection function and reduce the cost. Is an important topic. The current design method is to design the static suppression circuit at the input and output ends of the wafer, and to use an external static suppression element to protect the wafer. With the current trend in wafer design, it is increasingly infeasible to design ESD suppression lines in the wafer (because the cost is too high), and the use of external static suppression components is a future trend.
先前的過電壓保護材料的組成,幾乎都包含有導電顆粒(粉末)、半導體顆粒(粉末)、絕緣顆粒(粉為與絕緣黏結物等,混合而成的混合物。另外也有導電顆粒(粉末)、絕緣顆粒(粉末)與絕緣黏結物等,混合而成的混合物。導電顆粒的導電率一定是相當高的(或電阻率很低),至少顆粒與顆粒之間是導電的,故一定需要絕緣顆粒(粉末)或半導體顆粒(粉末),因為若無絕緣顆粒(或半導體顆粒)的阻隔,導電顆粒可能彼此緊靠(相鄰)或中間僅有一層極薄的絕緣黏結物,如此就無法達到在關閉狀態(off-state)下,需要高電阻的要求,過電壓保護材料主要的特性,就是要求在特定電壓或觸發電壓以下時,處於關閉狀態(off-state)的時候,過電壓保護材料的電阻愈高愈好,超過此特定電壓或觸發電壓以上時,處於開啟狀態(on-state)時,希望過電壓保護材料的電阻能降得愈低愈好,如此瞬間的大電流才能通過此過電壓保護材料,達到保護後段電子元件的效果。先前的過電壓保護材料,幾乎都包含導電材料(顆粒)、半導體材料(顆粒)、絕緣材料(顆粒)與絕緣黏結物。材料配方複雜,且因導電材料(顆粒)、半導體材料(顆粒)與絕緣顆粒,所占比率各自不同或相差很大,所以不易均勻分散(絕緣顆 粒或半導體顆粒,不易平均分佈在兩顆導電顆粒之間),以至於過電壓保護材料的均勻性與可靠度較差。 The composition of the prior overvoltage protection material almost contains conductive particles (powder), semiconductor particles (powder), insulating particles (powder is mixed with insulating adhesives, etc.), and conductive particles (powder), a mixture of insulating particles (powder) and insulating binders, etc. The conductivity of the conductive particles must be quite high (or low resistivity), at least between the particles and the particles, so insulation particles must be required. (powder) or semiconductor particles (powder), because without the barrier of insulating particles (or semiconductor particles), the conductive particles may be close to each other (adjacent) or only one layer of extremely thin insulating adhesive in the middle, so that In the off state, high resistance requirements are required. The main characteristic of overvoltage protection materials is that when the voltage is below the specified voltage or trigger voltage, the overvoltage protection material is in the off state. The higher the resistance, the better. When it exceeds this specific voltage or the trigger voltage, when the on-state is on, it is desirable that the resistance of the over-voltage protection material is reduced as low. Such a large current can pass this overvoltage protection material to protect the electronic components in the back stage. Previous overvoltage protection materials almost all contain conductive materials (particles), semiconductor materials (particles), insulating materials (particles) and insulation. Adhesive material. The material formula is complex, and the conductive materials (particles), semiconductor materials (particles) and insulating particles have different ratios or large differences, so they are not easily dispersed uniformly (insulation particles). The particles or semiconductor particles are not easily distributed evenly between the two conductive particles, so that the uniformity and reliability of the overvoltage protection material are poor.
US 5,781,395揭示一種過電壓保護材料,其藉由將導電顆粒與半導體顆粒形成導電路徑,再藉由較小的絕緣顆粒將導電顆粒與半導體顆粒分開,想使每顆導電顆粒與半導體顆粒產生距離,最後藉由絕緣黏結物將上述顆粒黏結在一起,可是由於導電顆粒與半導體顆粒的粒徑和重量都比絕緣顆粒和絕緣黏結物大了許多,所以想要有一均勻分布的過電壓保護材料,其實是很困難的,例如導電顆粒分散的不佳,則此過電壓保護材料的阻抗,在關閉狀態(off-state)時就不是很高。 US 5,781,395 discloses an overvoltage protection material which, by forming a conductive path between conductive particles and semiconductor particles, and separating the conductive particles from the semiconductor particles by smaller insulating particles, wants to make each conductive particle and semiconductor particles have a distance, Finally, the above particles are bonded together by insulating adhesive, but since the particle size and weight of the conductive particles and the semiconductor particles are much larger than the insulating particles and the insulating adhesive, it is desirable to have a uniformly distributed overvoltage protection material. It is very difficult, for example, if the conductive particles are poorly dispersed, the impedance of the overvoltage protection material is not very high in the off-state.
US 4,726,991揭示一種過電壓保護材料,其藉由將導電顆粒與半導體顆粒的表面塗上一無機絕緣材料,產生非線性的特性,其中導電顆粒與半導體顆粒都是多角體或多面體,其特徵在於有許多尖銳的角,在尖端的部分是很難塗上一層無機絕緣物,致使每顆導電顆粒無法有均勻的絕緣材料,以至於它的比例無法加太高,且需要半導體顆粒來分隔導電顆粒,否則此過電壓保護材料的阻抗,在關閉狀態(off-state)時不是很高,或需要較高比例(大於30%)的絕緣黏結物(Binder)與半導體顆粒是其缺點之一,另外因顆粒是多角體,所以顆粒與顆粒之間有許多間隙,無法緊密的相鄰,所以在同樣的體積下,它也無法像球狀的顆粒可以在絕緣黏接物中加入較高比例的顆粒,是其另一項缺點。 US 4,726,991 discloses an overvoltage protection material which produces non-linear properties by coating conductive particles with the surface of semiconductor particles with an inorganic insulating material, wherein the conductive particles and the semiconductor particles are both polyhedral or polyhedral, characterized by Many sharp corners are difficult to apply an inorganic insulator to the tip portion, so that each conductive particle cannot have a uniform insulating material, so that its proportion cannot be too high, and semiconductor particles are needed to separate the conductive particles. Otherwise, The impedance of this overvoltage protection material is not very high in the off-state, or a higher ratio (greater than 30%) of insulating binder (Binder) and semiconductor particles is one of its disadvantages, and It is a polyhedron, so there are many gaps between the particles and the particles, which cannot be closely adjacent. Therefore, under the same volume, it can not add a higher proportion of particles to the insulating adhesive like spherical particles. Another shortcoming.
本發明是有關於一種非線性阻抗材料,特別是有關於一種高電阻率粉末,且包含球狀(spherical)的高電阻率顆粒,本發明的 非線性阻抗材料能應用在過電壓保護元件,且能抑制瞬間的高壓突波,提升對電壓突波敏感之電子設備的可靠度。 The present invention relates to a nonlinear impedance material, and more particularly to a high resistivity powder, and comprising spherical high resistivity particles, the present invention Nonlinear impedance materials can be applied to overvoltage protection components, and can suppress transient high voltage surges and improve the reliability of electronic devices sensitive to voltage surges.
本發明之非線性阻抗材料,其包括絕緣黏結物、高電阻率(high resistivity)粉末。高電阻率粉末(high resistivity powder)是本發明的一項特點,其包括至少一種導電材料的顆粒(separate particles of conductive materials),且其每一顆粒表面上有一層絕緣層。因此每一顆粒彼此之間幾乎是絕緣的,其顆粒所組成的粉末,電阻率(resistivity)至少大於106ohms/cm。高電阻率粉末之含量可介於該非線性阻抗材料重量之10%至90%之間,較佳的(better)選擇是介於該非線性阻抗材料重量之40%~90%,最佳的(the best)選擇是介於該非線性阻抗材料重量之50%~90%,絕緣黏結物之含量可介於該非線性阻抗材料重量之10%至90%之間,較佳的選擇是介於該非線性阻抗材料重量之10%~60%,最佳的選擇是介於該非線性阻抗材料重量之10%~50%。絕緣黏結物與高電阻率粉末混練成一混合物,高電阻率粉末均勻的分佈在絕緣黏結物的裡面,當輸入電壓大於非線性阻抗材料的觸發電壓(Trigger Voltage)時,此材料會瞬間由高阻抗降為低阻抗,達到過電壓保護的功能。本發明另一特點是高電阻率(high resistivity)粉末,包含一種球狀(spherical)的顆粒,使得每顆高電阻率顆粒,可以達到較均勻的高阻抗,同時可以選擇不同粒徑的顆粒,達到最高的添加比率,如重量百分比90%以上(因為在相同的體積與粒徑下,圓球狀的顆粒有最小的表面 積,所以比其他形狀的顆粒,可以添加更高的比率),且不需要添加任何具有絕緣層的半導體顆粒,這是與US 4,726,991不同之處。 The nonlinear impedance material of the present invention comprises an insulating binder, a high resistivity powder. A high resistivity powder is a feature of the present invention which comprises at least one separate particles of conductive materials having an insulating layer on the surface of each particle. Thus each particle is almost insulative with respect to each other, and the particles of the particles have a resistivity of at least greater than 10 6 ohms/cm. The content of the high resistivity powder may be between 10% and 90% by weight of the nonlinear impedance material, and the better choice is between 40% and 90% of the weight of the nonlinear impedance material, the best (the The selection is between 50% and 90% of the weight of the nonlinear impedance material, and the content of the insulating adhesive may be between 10% and 90% of the weight of the nonlinear impedance material. The preferred choice is between the nonlinear impedance. The weight of the material is 10%~60%, and the best choice is between 10% and 50% of the weight of the nonlinear impedance material. The insulating adhesive is mixed with the high-resistivity powder to form a mixture. The high-resistivity powder is evenly distributed inside the insulating adhesive. When the input voltage is greater than the trigger voltage of the nonlinear impedance material, the material is instantaneously high-impedance. Reduced to low impedance, to achieve overvoltage protection. Another feature of the present invention is a high resistivity powder comprising a spherical particle such that each of the high resistivity particles can achieve a relatively uniform high impedance while selecting particles of different particle sizes. Achieve the highest addition ratio, such as more than 90% by weight (because spherical particles have the smallest surface area at the same volume and particle size, a higher ratio can be added than other shaped particles), and It is necessary to add any semiconductor particles having an insulating layer, which is different from US 4,726,991.
1‧‧‧過電壓抑制元件 1‧‧‧Overvoltage suppression components
10、11‧‧‧導電材料的顆粒 10, 11‧‧‧Particles of conductive materials
20、21‧‧‧絕緣層 20, 21‧‧‧ insulation
30‧‧‧絕緣黏結物 30‧‧‧Insulating adhesive
40‧‧‧絕緣顆粒 40‧‧‧Insulating particles
50‧‧‧半導體顆粒 50‧‧‧Semiconductor particles
61‧‧‧第一電極 61‧‧‧First electrode
62‧‧‧第二電極 62‧‧‧second electrode
100、101、102‧‧‧高電阻率粉末 100, 101, 102‧‧‧ high resistivity powder
110‧‧‧絕緣基板 110‧‧‧Insert substrate
200、201、202、203、204‧‧‧非線性阻抗材料 200, 201, 202, 203, 204‧‧‧ Nonlinear impedance materials
D‧‧‧間隙 D‧‧‧ gap
圖1繪示一種過電壓抑制元件的結構示意圖。 FIG. 1 is a schematic structural view of an overvoltage suppressing element.
圖1A繪示為本發明之一種球狀(spherical)高電阻率顆粒的示意圖。 1A is a schematic view of a spherical high resistivity particle of the present invention.
圖1B繪示為本發明之一種多面體(polyhedron)高電阻率顆粒的示意圖。 1B is a schematic view of a polyhedron high resistivity particle of the present invention.
圖1C繪示為本發明圖1A&1B之兩種不同高電阻率顆粒的示意圖。 1C is a schematic view of two different high resistivity particles of FIGS. 1A & 1B of the present invention.
圖2A繪示為本發明之第一實施例之一種非線性阻抗材料,其球狀的高電阻率粉末與絕緣黏結物之間的關係示意圖。 2A is a schematic view showing the relationship between a spherical high-resistivity powder and an insulating adhesive according to a first embodiment of the present invention.
圖2B繪示為本發明之第二實施例之一種非線性阻抗材料,其多面體的高電阻率粉末與絕緣黏結物之間的關係示意圖。 2B is a schematic view showing the relationship between a polyhedral high resistivity powder and an insulating adhesive according to a second embodiment of the present invention.
圖2C繪示為本發明之第三實施例之一種非線性阻抗材料,其包含球狀與多面體的高電阻率粉末與絕緣黏結物之間的關係示意圖。 2C is a schematic view showing a relationship between a high-resistivity powder of a spherical shape and a polyhedron and an insulating adhesive according to a third embodiment of the present invention.
圖3繪示為本發明之第四實施例之一種非線性阻抗材料,其包含球狀的高電阻率粉末、絕緣顆粒與絕緣黏結物之間的關係示意圖。 3 is a schematic view showing a relationship between a spherical high-resistivity powder, insulating particles and an insulating binder according to a fourth embodiment of the present invention.
圖4繪示為本發明之第五實施例之一種非線性阻抗材料,其包含球狀的高電阻率顆粒、半導體顆粒與絕緣黏結物之間的關係示意圖。 4 is a diagram showing a nonlinear impedance material according to a fifth embodiment of the present invention, which includes spherical high resistivity particles, a relationship between semiconductor particles and an insulating binder.
圖5繪示非線性阻抗材料的觸發電壓與高電阻率粉末在絕緣黏結物中重量百分比的關係圖。 Figure 5 is a graph showing the relationship between the trigger voltage of a non-linear resistive material and the weight percent of a high resistivity powder in an insulating bond.
圖6繪示非線性阻抗材料的阻值與絕緣黏結物在非線性阻抗材料中重量百分比的關係圖。 Figure 6 is a graph showing the relationship between the resistance of the nonlinear impedance material and the weight percent of the insulating binder in the nonlinear impedance material.
本發明是有關一種非線性阻抗材料,其可應用在過電壓抑制器或過電壓保護元件中。 The present invention relates to a nonlinear impedance material that can be used in an overvoltage suppressor or an overvoltage protection component.
為使能更進一步瞭解本發明之特徵和技術內容,請參閱以下相關的實施例,並配合所附圖式作詳細說明如下: In order to further understand the features and technical contents of the present invention, please refer to the following related embodiments, and the detailed description is as follows:
圖1繪示的是一種過電壓抑制器的結構剖面示意圖,第一電極61可以連接信號的輸入端,第二電極62可以連接電路或系統的地端。本發明的非線性阻抗材料200可用印刷的方式填入介於第一電極61與第二電極62之間的間隙D內,本發明的非線性阻抗材料,會隨著第一電極與第二電極之間的電壓差,而改變阻抗的高低,使得當電壓差超過本發明非線性阻抗材料的觸發電壓(Trigger Voltage)時,本材料的阻抗會瞬間降低,可以將瞬間的大電流,經由第一電極、非線性阻抗材料與第二電極而導入電路或系統的地端,如此可以避免瞬間的大電流(高電壓),破壞整個電路後端的電子元件,進而使電子產品的可靠度可以提升。 1 is a cross-sectional view showing the structure of an overvoltage suppressor. The first electrode 61 can be connected to the input end of the signal, and the second electrode 62 can be connected to the ground of the circuit or system. The nonlinear impedance material 200 of the present invention can be filled in the gap D between the first electrode 61 and the second electrode 62 by printing, and the nonlinear impedance material of the present invention will follow the first electrode and the second electrode. The voltage difference between them changes the level of the impedance, so that when the voltage difference exceeds the trigger voltage of the nonlinear impedance material of the present invention, the impedance of the material is instantaneously reduced, and the instantaneous large current can be passed through the first The electrode, the nonlinear impedance material and the second electrode are introduced into the ground of the circuit or the system, so that an instantaneous large current (high voltage) can be avoided, and the electronic components at the rear end of the entire circuit are destroyed, so that the reliability of the electronic product can be improved.
本發明的非線性阻抗材料,包含一高電阻率的粉末(high resistivity powder)與一絕緣黏結物。圖1A、圖1B及圖1C是由不同形狀、不同粒徑、不同導電材料的高電阻率顆粒(high resistivity particles)所 組成的高電阻粉末(high resistivity powder)的示意圖。圖1A繪示的是一些球狀的(spherical)高電阻率顆粒組成的高電阻率粉末100,每一顆球狀的高電阻率顆粒,其核心是由至少一種導電材質所形成的球狀顆粒10,並在每顆球狀顆粒10的表面上,有一層絕緣層20。圖1B繪示的是一些多面體(polyhedron)的高電阻率顆粒所組成的高電阻率粉末101,每一顆多面體的高電阻率顆粒,其核心是由至少一種導電材質所形成的多面體顆粒11,並在每顆多面體顆粒11的表面上,有一層絕緣層21。圖1C繪示的是一些球體與一些多面體,兩種不同的高電阻率顆粒組成的高電阻率粉末102,每一顆球狀的高電阻率顆粒,其核心是由至少一種導電材質所形成的球狀顆粒10,並在每顆球狀的顆粒10的表面上,有一層絕緣層20,每一顆多面體的高電阻率顆粒,其核心是由至少一種導電材質所形成的多面體顆粒11,並在每顆多面體的顆粒11的表面上,有一層絕緣層21。 The nonlinear impedance material of the present invention comprises a high resistivity powder and an insulating binder. 1A, 1B, and 1C are high resistivity particles of different shapes, different particle sizes, and different conductive materials. A schematic representation of a composition of high resistivity powder. Figure 1A shows a high-resistivity powder 100 composed of spherical high-resistivity particles, each of which has a spherical high-resistivity particle whose core is a spherical particle formed of at least one conductive material. 10, and on the surface of each of the spherical particles 10, there is an insulating layer 20. FIG. 1B illustrates a high-resistivity powder 101 composed of polyhedron high-resistivity particles, each of which is a high-resistivity particle of a polyhedron whose core is a polyhedral particle 11 formed of at least one electrically conductive material. And on the surface of each of the polyhedral particles 11, there is an insulating layer 21. Figure 1C shows some spheres and some polyhedrons, two different high-resistivity particles composed of high-resistivity particles 102, each of which has a spherical high-resistivity particle whose core is formed by at least one conductive material. The spherical particles 10, and on the surface of each of the spherical particles 10, have an insulating layer 20, each of the polyhedral high-resistivity particles, the core of which is a polyhedral particle 11 formed of at least one electrically conductive material, and On the surface of each of the polyhedral particles 11, there is an insulating layer 21.
圖2A繪示為本發明之第一實施例之一種非線性阻抗材料200,包含一球狀的(spherical)高電阻率粉末(high resistivity powder)100與一絕緣黏結物30。球狀的高電阻率粉末100,其每一顆球狀的高電阻率顆粒,其核心是由包括金屬羰基(Metal Carbonyl)的導電材質所形成的球狀顆粒10,並在每顆球狀顆粒10的表面上,有一層絕緣層20。金屬羰基(Metal Carbonyl)的導電材質包含羰基鐵(Carbonyl Iron)、羰基鎳(Carbonyl Nickel)、羰基鈷(Carbonyl Cobalt)中的一種或其組合物。絕緣層20的材質包含SiO2、H3PO4、fumed silicon dioxide、haolin、kaolinite、various forms of silica、glass spheres、phosphoric acid中的一種或其組合物。本實施例中的球狀的高電阻率粉末100,是羰基鐵 (Carbonyl Iron)顆粒所組成的高電阻率粉末,其顆粒表面上絕緣層20的材質包含SiO2、H3PO4。此球狀的高電阻率顆粒形成的高電阻率粉末100,其電阻率大於1010ohm/cm,其平均粒徑小於90微米(um)。絕緣黏結物30的材質包括熱固型聚合物(thermoset polymers)、熱塑型聚合物(thermoplastic polymers)、環氧樹脂(epoxy)、矽氧樹脂(silicone)、矽橡膠(silicone rubber)、橡膠(rubber)、聚乙烯、聚丙烯、聚氨酯中的一種或其組合物,其電阻率(resistivity)大於1010ohms/cm。本實施例中的絕緣黏結物30是矽橡膠(silicone rubber),其電阻率(resistivity)大於1010ohms/cm。絕緣黏結物30與高電阻率粉末100混練成一混合物也就是非線性阻抗材料200,高電阻率粉末均勻且緊密的分佈在絕緣黏結物的裡面,當輸入電壓大於非線性阻抗材料200的觸發電壓(Trigger Voltage)時,此材料會瞬間由關閉狀態(off-state)時的高阻抗降為開啟狀態(on-state)時的低阻抗,達到過電壓保護的功能。本實施例球狀的(spherical)高電阻率粉末在絕緣黏結物中的重量百分比與觸發電壓之間的關係或影響(effect),如圖5所繪示的圖形。圖5中的觸發電壓是經由重複的輸入1000伏特(Volt)的脈衝波(Pulse),且通過不同重量百分比的高電阻率粉末與不同重量百分比的絕緣黏結物所調成的非線性阻抗材料,所測得的結果。圖5中有兩條曲線代表的是說就算是同樣的配方且同樣的輸入電壓,但每次測得的結果仍有不一樣的觸發電壓,但它的趨勢是如圖5所繪的曲線一樣,只是會有某個百分比的區間變化。依據圖5的結果顯示高電阻率粉末的重量百分比從1%的比率 開始就對觸發電壓產生影響,當比率愈加愈高時,觸發電壓會愈來愈低,直到加到90%的時候,觸發電壓接近最低的電壓,只是在高電阻率粉末添加比率較低時,觸發電壓的變化率會較大。在高電阻率粉末的平均粒徑小於15微米(um)時,90%的比率可能是最高的比率,因絕緣黏結物的比率低於10%時,已經無法順利且均勻的混合成一混合物,也就是絕緣黏結物無法覆蓋每一顆高電阻率的顆粒。當然若可以將高電阻率顆粒的粒徑改變為更大的粒徑,添加的比率也可以大於90%。本發明非線性阻抗材料有另一特點如圖6所示,因本發明的高電阻率粉末中,每顆高電阻率顆粒本身就是絕緣的,所以高電阻率粉末,其電阻率大於1010ohm/cm,就算絕緣黏結物的百分比為零,其非線性阻抗材料的阻抗仍是相當的高(大於1010ohm),這是與之前的技術或其他專利不同的地方,當然絕緣黏結物的百分比增加,則非線性阻抗材料在關閉狀態(off-state)的阻抗會愈高,如圖6所示。 2A illustrates a nonlinear impedance material 200 comprising a spherical high resistivity powder 100 and an insulating binder 30 in accordance with a first embodiment of the present invention. A spherical high-resistivity powder 100, each of which has a spherical high-resistivity particle whose core is a spherical particle 10 formed of a conductive material including a metal carbonyl (Metal Carbonyl), and in each spherical particle On the surface of 10, there is an insulating layer 20. The conductive material of the metal carbonyl group (Metal Carbonyl) comprises one of Carbonyl Iron, Carbonyl Nickel, Carbonyl Cobalt or a combination thereof. The material of the insulating layer 20 includes one of SiO 2 , H 3 PO 4 , fumed silicon dioxide, haolin, kaolinite, various forms of silica, glass spheres, phosphoric acid, or a combination thereof. The spherical high-resistivity powder 100 in the present embodiment is a high-resistivity powder composed of carbonyl iron particles, and the material of the insulating layer 20 on the surface of the particles contains SiO 2 and H 3 PO 4 . The spherical high-resistivity particles form a high-resistivity powder 100 having a resistivity of more than 10 10 ohm/cm and an average particle diameter of less than 90 μm. The material of the insulating adhesive 30 includes thermoset polymers, thermoplastic polymers, epoxy, silicone, silicone rubber, rubber ( One of rubber, polyethylene, polypropylene, polyurethane, or a combination thereof, having a resistivity greater than 10 10 ohms/cm. The insulating adhesive 30 in this embodiment is a silicone rubber having a resistivity greater than 10 10 ohms/cm. The insulating adhesive 30 is mixed with the high resistivity powder 100 into a mixture, that is, the nonlinear resistive material 200. The high resistivity powder is uniformly and tightly distributed inside the insulating adhesive, when the input voltage is greater than the trigger voltage of the nonlinear resistive material 200 ( At Trigger Voltage), this material instantaneously drops from a high impedance at the off-state to a low impedance at the on-state, achieving overvoltage protection. The relationship between the weight percentage of the spherical high-resistivity powder in the insulating bond and the trigger voltage in this embodiment is the effect as shown in FIG. The trigger voltage in FIG. 5 is a non-linear impedance material modulated by a repeated input of a pulse of 1000 volts (Pulse) and passed through different weight percentages of high resistivity powder and different weight percentages of insulating adhesive. The measured result. There are two curves in Figure 5 that represent the same recipe and the same input voltage, but each measurement still has a different trigger voltage, but its trend is the same as the curve shown in Figure 5. , there will only be a percentage change in the interval. According to the results of Fig. 5, the weight percentage of the high resistivity powder has an influence on the trigger voltage from the ratio of 1%. When the ratio is higher, the trigger voltage will become lower and lower until it is added to 90%. The voltage is close to the lowest voltage, but the rate of change of the trigger voltage is greater when the high resistivity powder addition ratio is lower. When the average particle diameter of the high resistivity powder is less than 15 micrometers (um), the ratio of 90% may be the highest ratio, and when the ratio of the insulating binder is less than 10%, it is impossible to smoothly and uniformly mix into a mixture. That is, the insulating adhesive cannot cover every high resistivity particle. Of course, if the particle size of the high resistivity particles can be changed to a larger particle size, the ratio of addition can be greater than 90%. The non-linear impedance material of the present invention has another characteristic as shown in FIG. 6. Since the high-resistivity powder of the present invention is intrinsically high in each of the high-resistivity powders, the high-resistivity powder has a resistivity greater than 10 10 ohm. /cm, even if the percentage of insulating binder is zero, the impedance of the nonlinear impedance material is still quite high (greater than 10 10 ohm), which is different from previous technology or other patents, of course, the percentage of insulating cement Increasing, the impedance of the nonlinear impedance material in the off-state will be higher, as shown in Figure 6.
圖2B繪示為本發明之第二實施例之一種非線性阻抗材料201,包含一多面體(polyhedron)高電阻率粉末101與一絕緣黏結物30。多面體的高電阻率粉末101,其每一顆多面體的高電阻率顆粒,其核心是由包括金屬碳化物(Metel Carbide)的導電材質所形成的多面體顆粒11,並在每顆多面體顆粒11的表面上,有一層絕緣層21。其中金屬碳化物導電材質,包含碳化鈦(titanium carbide)、碳化铌(columbian carbide)、碳化鉭(tantalum carbide)、碳化鎢(tungsten carbide)、碳化鋯(zirconium carbide)、碳化硼(boron carbide)中的一種或其組合物。絕緣層21是經由 高溫的氧化製程,所產生的金屬氧化層達到絕緣的效果。本實施例中多面體的高電阻率粉末101,是碳化鈦(titanium carbide)顆粒所組成的高電阻率粉末101,其顆粒表面上絕緣層21經由高溫的氧化製程,所產生的金屬氧化層。此多面體高電阻率顆粒形成的高電阻率粉末101,其電阻率大於107ohm/cm,其平均粒徑小於100微米(um)。絕緣黏結物30的材質包括熱固型聚合物(thermoset polymers)、熱塑型聚合物(thermoplastic polymers)、環氧樹脂(epoxy)、矽氧樹脂(silicone)、矽橡膠(silicone rubber)、橡膠(rubber)、聚乙烯、聚丙烯、聚氨酯中的一種或其組合物,其電阻率(resistivity)大於107ohms/cm。本實施例中的絕緣黏結物30是矽橡膠(silicone rubber)。絕緣黏結物30與高電阻率粉末101混練成一混合物也就是非線性阻抗材料201,高電阻率粉末均勻且緊密的分佈在絕緣黏結物的裡面,當輸入電壓大於非線性阻抗材料的觸發電壓(Trigger Voltage)時,此材料會瞬間由關閉狀態(off-state)時的高阻抗降為開啟狀態(on-state)時的低阻抗,達到過電壓保護的功能。本實施例多面體(polyhedron)高電阻率粉末在絕緣黏結物中的重量百分比與觸發電壓之間的關係或影響(effect),類似圖5所繪示的圖形。結果也類似圖5的結果,顯示高電阻率粉末的重量百分比從1%的比率開始就對觸發電壓產生影響,當比率愈加愈高時,觸發電壓會愈來愈低,直到加到90%的時候,觸發電壓接近最低的電壓,只是在高電阻率粉末添加比率較低時,觸發電壓的變化率會較大。在高電阻率粉末的平均粒徑小於15微米(um)時,90%的比率可能是最高的比率,因絕緣黏結物的比 率低於10%時,已經無法順利且均勻的混合成一混合物,也就是絕緣黏結物無法覆蓋每一顆高電阻率的顆粒。當然若可以將多面體高電阻率顆粒的粒徑改變為更大的粒徑,添加的比例也可以大於90%,但最高比率會略低於第一實施例中的球狀的高電阻率粉末。本發明非線性阻抗材料201有另一特點類似圖6所示,因本發明的高電阻率粉末中,每顆高電阻率顆粒本身就是絕緣的,所以高電阻率粉末,其電阻率大於107ohm/cm,就算絕緣黏結物的百分比為零,其非線性阻抗材料的阻抗仍是相當的高(大於107ohm),這是與之前的技術或其他專利不同的地方,當然絕緣黏結物的百分比增加,則非線性阻抗材料在關閉狀態(off-state)的阻抗會愈高,類似如圖6所示。 2B illustrates a nonlinear impedance material 201 comprising a polyhedron high resistivity powder 101 and an insulating binder 30 in accordance with a second embodiment of the present invention. The polyhedral high-resistivity powder 101, each of which is a polyhedral high-resistivity particle whose core is a polyhedral particle 11 formed of a conductive material including metal carbide (Metel Carbide), and is on the surface of each polyhedral particle 11 Above, there is an insulating layer 21. The metal carbide conductive material comprises titanium carbide, columbian carbide, tantalum carbide, tungsten carbide, zirconium carbide, boron carbide. One or a combination thereof. The insulating layer 21 is subjected to a high-temperature oxidation process, and the resulting metal oxide layer achieves an insulating effect. In the present embodiment, the polyhedral high-resistivity powder 101 is a high-resistivity powder 101 composed of titanium carbide particles, and the metal oxide layer is formed on the surface of the particle by the high-temperature oxidation process. The high resistivity powder 101 formed of the polyhedral high-resistivity particles has a resistivity of more than 10 7 ohm/cm and an average particle diameter of less than 100 μm. The material of the insulating adhesive 30 includes thermoset polymers, thermoplastic polymers, epoxy, silicone, silicone rubber, rubber ( One of rubber, polyethylene, polypropylene, polyurethane, or a combination thereof, having a resistivity greater than 10 7 ohms/cm. The insulating adhesive 30 in this embodiment is a silicone rubber. The insulating adhesive 30 is mixed with the high resistivity powder 101 into a mixture, that is, the nonlinear impedance material 201. The high resistivity powder is uniformly and tightly distributed inside the insulating adhesive, and the input voltage is greater than the trigger voltage of the nonlinear impedance material (Trigger Voltage), this material will instantly drop from the high impedance at the off-state to the low impedance at the on-state, achieving overvoltage protection. The relationship between the weight percentage of the polyhedron high resistivity powder in the insulating bond and the trigger voltage of this embodiment is similar to that shown in FIG. The result is similar to the result of Figure 5, which shows that the weight percentage of the high resistivity powder has an effect on the trigger voltage from a ratio of 1%. When the ratio is higher, the trigger voltage will become lower and lower until it is added to 90%. At the same time, the trigger voltage is close to the lowest voltage, but the rate of change of the trigger voltage is large when the high resistivity powder addition ratio is low. When the average particle diameter of the high resistivity powder is less than 15 micrometers (um), the ratio of 90% may be the highest ratio, and when the ratio of the insulating binder is less than 10%, it is impossible to smoothly and uniformly mix into a mixture. That is, the insulating adhesive cannot cover every high resistivity particle. Of course, if the particle size of the polyhedral high-resistivity particles can be changed to a larger particle diameter, the added ratio can also be greater than 90%, but the highest ratio is slightly lower than the spherical high-resistivity powder in the first embodiment. The nonlinear impedance material 201 of the present invention has another characteristic similar to that shown in FIG. 6. Because of the high resistivity powder of the present invention, each high resistivity particle itself is insulated, so the high resistivity powder has a resistivity greater than 10 7 . Ohm/cm, even if the percentage of insulating adhesive is zero, the impedance of the nonlinear impedance material is still quite high (greater than 10 7 ohm), which is different from the previous technology or other patents, of course, the insulating adhesive As the percentage increases, the impedance of the nonlinear impedance material in the off-state will be higher, similar to that shown in Figure 6.
圖2C繪示為本發明之第三實施例之一種非線性阻抗材料202,包含第一實施例中的球狀的(spherical)高電阻率粉末(high resistivity powder)、第二實施例中的多面體(polyhedron)高電阻率粉末(high resistivity powder)與一絕緣黏結物30(與第一實施例相同)。球狀的高電阻率粉末100與多面體高電阻率粉末101,任何的比例混和所組成的高電阻率粉末102與絕緣黏結物30混和成的非線性阻抗材料202,高電阻率粉末102之含量介於該非線性阻抗材料202重量百分比10%至90%之間,絕緣黏結物30之含量介於該非線性阻抗材料202重量百分比10%至90%之間,也可以達到如實施例一所述類似的電氣特性,也就是類似如圖5與圖6的電氣特性的曲線。 2C illustrates a nonlinear impedance material 202 according to a third embodiment of the present invention, including a spherical high resistivity powder in the first embodiment, and a polyhedron in the second embodiment. (polyhedron) a high resistivity powder and an insulating binder 30 (same as the first embodiment). The spherical high-resistivity powder 100 and the polyhedral high-resistivity powder 101 are mixed in any ratio, and the high-resistivity powder 102 and the insulating adhesive 30 are mixed to form a nonlinear impedance material 202, and the content of the high-resistivity powder 102 is Between 10% and 90% by weight of the nonlinear resistive material 202, the content of the insulating adhesive 30 is between 10% and 90% by weight of the nonlinear resistive material 202, and can also be similar to that described in the first embodiment. Electrical characteristics, that is, curves similar to the electrical characteristics of Figures 5 and 6.
圖3繪示為本發明之第四實施例之一種非線性阻抗材料
203,其包含球狀的高電阻率粉末100、絕緣粉末(或顆粒40)與絕緣黏結物30。除了像第一實施例以外,非線性阻抗材料可另包含一絕緣顆粒或絕緣粉末,該絕緣粉末包含金屬氧化物、various forms of silica、fumed colloidal silica、untreated fumed silica、二氧化矽、氧化鋁、氧化鎂、氫氧化鋁、氫氧化鎂中的一種或其組合物。該絕緣粉末其每顆絕緣顆粒的尺寸小於10微米(um),其含量係介於該非線性阻抗材料203之重量百分比0.001%至3%之間。此絕緣顆粒的功能主要是可以隔開或增加高電阻率顆粒之間的距離,進而提升非線性阻抗材料在關閉狀態(off-state)的阻抗,當然絕緣顆粒的加入,也會影響觸發電壓的高低,只要添的重量百分比小於非線性阻抗材料的重量百分比的3%,其電氣特性仍會如圖5&圖6的類似的曲線趨勢,所以未繪示圖例。當然第二、第三實施例也可像第四實施例,在第二、第三實施例外另包含一絕緣顆粒或絕緣粉末,其重量百分比小於非線性阻抗材料重量百分比的3%。下列表I顯示不同重量比例的非線性阻抗材料的混合物之範例:
圖4繪示為本發明之第五實施例之一種非線性阻抗材料204,其包含球狀的高電阻率粉末100、半導體粉末(或顆粒50)與絕緣黏結物30。除了像第一實施例以外,第五實施例的非線性阻抗材料可另包含一半導體粉末或半導體顆粒,其半導體粉末包含氧化锌、氧化鈣、氧化鈮、氧化釩、氧化鈦、鈦酸鋇、碳化矽中的一種或其組合物。此半導體顆粒的功能主要是可以隔開或增加高電阻率顆粒之間的距離,利用半導體的特性,也可降低非線性阻抗材料的觸發電壓,可利用半導體顆粒所添加的不同比率,來調整非線性阻抗材料的觸發電壓,符合不同應用上的需求。只要添的重量百分比小於非線性阻抗材料的重量百分比的5%,其電氣特性仍會如圖5&圖6的類似的曲線趨勢,故未繪示圖例。當然第二、第三實施例也可像第五實施例,在第二、第三實施例外另包含一半導體顆粒,半導體顆粒其重量百分比小於非線性阻抗材料重量百分比的5%。下列表II顯示不同重量比例的非線性阻抗材料的混合物之範例:
在上述的五個實施例中,因高電阻率粉末與絕緣黏結物之間的相容性是非常重要的,若能確保此兩種材料可以結合得更好,在本發明過程中,第一實施例中有添加偶連劑(coupling agents)或增塑劑,其重量百分比小於非線性阻抗材料重量百分比的3%,發現可以提高非線性阻抗材料在關閉狀態(off-state)的阻抗,比沒有添加增塑劑或偶連劑(coupling agents)時來的高。 In the above five embodiments, the compatibility between the high resistivity powder and the insulating binder is very important, and if it can be ensured that the two materials can be combined better, in the process of the present invention, the first In the examples, coupling agents or plasticizers are added, the weight percentage of which is less than 3% by weight of the nonlinear impedance material, and it is found that the impedance of the nonlinear impedance material in off-state can be improved. High when no plasticizer or coupling agents are added.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準,凡合於本發明申請專利範圍之精神與 其運用本發明說明書及圖式內容所為之類似變化,均包含於本發明之專利範圍內。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the present invention is defined by the scope of the appended claims, and the spirit of the invention is Similar changes to the description of the present invention and the contents of the drawings are included in the scope of the present invention.
200‧‧‧非線性阻抗材料 200‧‧‧Nonlinear impedance material
10‧‧‧導電材料的顆粒 10‧‧‧Particles of conductive materials
20‧‧‧絕緣層 20‧‧‧Insulation
30‧‧‧絕緣黏結物 30‧‧‧Insulating adhesive
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102143952A TWI550647B (en) | 2013-12-02 | 2013-12-02 | Non-linear impendance material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102143952A TWI550647B (en) | 2013-12-02 | 2013-12-02 | Non-linear impendance material |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201523645A TW201523645A (en) | 2015-06-16 |
TWI550647B true TWI550647B (en) | 2016-09-21 |
Family
ID=53935763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102143952A TWI550647B (en) | 2013-12-02 | 2013-12-02 | Non-linear impendance material |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI550647B (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI342569B (en) * | 2006-11-24 | 2011-05-21 | Sfi Electronics Technology Inc | Esd protective materials and method for making the same |
-
2013
- 2013-12-02 TW TW102143952A patent/TWI550647B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI342569B (en) * | 2006-11-24 | 2011-05-21 | Sfi Electronics Technology Inc | Esd protective materials and method for making the same |
Also Published As
Publication number | Publication date |
---|---|
TW201523645A (en) | 2015-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20120217450A1 (en) | Voltage switchable dielectric material having bonded particle constituents | |
JPH02503049A (en) | Nonlinear materials and overvoltage protection devices using them | |
TWI351702B (en) | Voltage non-linear resistance ceramic composition | |
CN103080237B (en) | There is the composition of nonlinear current-voltage | |
US20160012936A1 (en) | Graphene Printed Pattern Circuit Structure | |
JP5630596B2 (en) | Conductive particle powder | |
JP2015173246A (en) | Conductive thin film including silicon-carbon composite as printable thermistor | |
US20190371485A1 (en) | Nonlinear composite compositions, methods of making the same, and articles including the same | |
EP3050184A1 (en) | Compositions for electric field grading | |
TWI550647B (en) | Non-linear impendance material | |
JP2009295760A (en) | Material and component for dealing with static electricity | |
JP6119005B2 (en) | Non-ohmic resin material, method for producing the same, and non-ohmic resistor using the resin material | |
US10446299B2 (en) | Varistor having multilayer coating and fabrication method | |
CN102184913B (en) | Anti-static device | |
US20140321009A1 (en) | Esd protection material and esd protection device using the same | |
CN102220109B (en) | Preparation method of sizing applied to electrostatic devices | |
US8199450B2 (en) | ESD protection utilizing radiated thermal relief | |
US20140301002A1 (en) | Esd protection material and esd protection device using the same | |
JP5585797B2 (en) | Conductive particle powder | |
Anas et al. | Sol-gel materials for varistor devices | |
KR101983163B1 (en) | Particles with special structure for preventing electrostatic discharge and paste containing the same | |
WO2023140034A1 (en) | Nonlinear resistive resin material, non-linear resistive body, overvoltage protection device, and method for manufacturing nonlinear resistive resin material | |
TWI342569B (en) | Esd protective materials and method for making the same | |
KR102105401B1 (en) | ESD Paste and Method of the Same | |
Kabir et al. | Measurement of electrical characteristics of ZnO microvaristors |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |