TWI541483B - Ir conveyor furnace having single belt with multiple independently controlled processing lanes and a method of thermal processing solar wafers in ir-lamp-heated furnaces - Google Patents

Description

具有單帶與多個獨立控制處理線之紅外線輸送機爐以及一種在紅外線燈加熱爐中熱處理太陽能電池晶圓之方法 Infrared conveyor furnace with single belt and multiple independent control processing lines and method for heat treating solar cell wafer in infrared lamp heating furnace

本申請案係針對尤其適用於網版印刷矽太陽能電池晶圓之金屬化燒製之改良紅外線輸送機爐，其中至少一個區域，較佳高強度燒製區域(「尖峰」區域)縱向分隔而形成兩個可獨立控制之線；及各線之可獨立控制之燒製方法，由此使所得太陽能電池光伏打元件之生產輸送量及效率更高。改良之爐組態系統之特徵為單一輸送機帶，其以可選速度自入口端水平移動穿過紅外線爐之多個區域至出口端，其中至少一個區域縱向分成兩個並排區域，各區域具有其自身專用紅外線燈組。各組燈可獨立控制以在各並排線中提供獨特熱特徵。 The present application is directed to an improved infrared conveyor furnace that is particularly suitable for use in screen printing, solar cell wafer metallization firing, wherein at least one region, preferably a high intensity firing region ("spike" region), is longitudinally separated to form Two independently controllable wires; and independently controllable firing methods of the wires, thereby resulting in a higher throughput and efficiency of the resulting solar cell photovoltaic components. The improved furnace configuration system is characterized by a single conveyor belt that moves horizontally from the inlet end to a plurality of areas from the infrared furnace to the outlet end at an optional speed, wherein at least one of the areas is longitudinally divided into two side by side areas, each area having Its own dedicated infrared light group. Each set of lights can be independently controlled to provide unique thermal characteristics in each side-by-side line.

矽基太陽能電池之製造需要許多以特定次序進行的特殊化製程。首先，製造稱為錠之長「臘腸形」單晶物質或多晶塊，由此用「線鋸」橫向切出矽薄片而形成粗糙太陽能電池晶圓。接著處理粗糙晶圓以形成厚度在150微米至330微米範圍內之光滑晶圓。因為缺乏適合的矽，所以 當前的趨勢是使晶圓變薄，典型地厚度為180微米。 The fabrication of germanium-based solar cells requires a number of specialization processes in a specific order. First, a long "sausage-shaped" single crystal substance or polycrystalline block called an ingot is produced, whereby a tantalum sheet is laterally cut out by a "wire saw" to form a rough solar cell wafer. The rough wafer is then processed to form a smooth wafer having a thickness in the range of 150 microns to 330 microns. Because of the lack of suitable cockroaches, The current trend is to thin the wafer, typically 180 microns thick.

接著將拋光之原始晶圓處理成為能夠藉由光伏打效應發電之功能性太陽能電池。晶圓處理由多個清潔及蝕刻操作起始，以稱為擴散摻雜之製程結束，該製程會產生半導體「p-n」接面二極體，亦即在曝露於日光(正常光子源)時發射電子之層。藉由有燒結至電池表面之網版印刷金屬接點之細網收集此等電子，如下文所更詳細描述。 The polished original wafer is then processed into a functional solar cell capable of generating electricity by photovoltaic effect. Wafer processing begins with multiple cleaning and etching operations, ending with a process known as diffusion doping, which produces a semiconductor " pn " junction diode, which is emitted when exposed to sunlight (normal photon source). The layer of electronics. The electrons are collected by a fine mesh having screen printed metal contacts sintered to the surface of the cell, as described in more detail below.

為提高在下伏矽p-n接面發射極層形成低電阻網版印刷金屬接點之能力，在晶圓之正面上沈積額外量之磷。經由持續長達30分鐘的高溫擴散製程將磷驅入晶圓中。在擴散及多個清潔及蝕刻製程以自晶圓之側面移除不需要之半導體接面之後，一般藉由電漿增強化學氣相沈積(PECVD)在晶圓上塗佈抗反射塗層，典型地為氮化矽(SiN₃)，其沈積厚度為光波長(0.6微米)之約1/4。在ARC塗覆之後，電池展示深藍色之表面顏色。ARC使波長約0.6微米之入射光子之反射降至最低。 To increase the ability to form low-resistance screen-printed metal contacts on the underlying pn junction emitter layer, an additional amount of phosphor is deposited on the front side of the wafer. Phosphorus is driven into the wafer via a high temperature diffusion process that lasts up to 30 minutes. After diffusion and multiple cleaning and etching processes to remove unwanted semiconductor junctions from the sides of the wafer, anti-reflective coatings are typically applied to the wafer by plasma enhanced chemical vapor deposition (PECVD). The ground is tantalum nitride (SiN ₃ ), which is deposited to a thickness of about 1/4 of the wavelength of light (0.6 microns). After ARC coating, the battery exhibited a dark blue surface color. ARC minimizes reflection of incident photons with a wavelength of approximately 0.6 microns.

在ARC SiN_x塗層PECVD製程期間，氫解離且極其迅速地擴散至矽晶圓中。氫具有偶然修復體缺陷之作用，在多晶材料中尤其如此。然而，在隨後紅外線燒製期間，高溫(400℃以上)將使氫自晶圓中擴散出去。因此，燒製時間必需短以防止此氫自晶圓中『釋氣』。最佳的是捕捉氫且保留在本體材料(尤其在多晶材料之情況下)內。 During the ARC SiN _x coated PECVD process, hydrogen dissociates and diffuses extremely rapidly into the germanium wafer. Hydrogen has the effect of accidental prosthetic defects, especially in polycrystalline materials. However, during subsequent infrared firing, high temperatures (above 400 ° C) will allow hydrogen to diffuse out of the wafer. Therefore, the firing time must be short to prevent this hydrogen from "outgassing" from the wafer. It is preferred to capture hydrogen and remain in the bulk material, especially in the case of polycrystalline materials.

太陽能電池之背面用Al漿料塗層覆蓋，其在紅外線爐中「燒製」以使其與摻雜矽形成合金，從而形成「背面電場」。或者，乾燥背面鋁漿料乾燥，接著將晶圓翻過來用銀漿料以電接點圖案對正面進行網版印刷，亦使其乾燥。接著在單一燒製步驟中使兩種材料(背面鋁及正面銀接點漿料)共燒製，由此節省一個處理步驟。背面鋁漿料熔融(「合金」)成連續塗層，同時正面漿料以高速及高溫燒結在太陽能電池之正面上而形成光滑低歐姆電阻導體。 The back side of the solar cell is covered with an Al slurry coating which is "fired" in an infrared furnace to form an alloy with the doped germanium to form a "back surface electric field". Alternatively, the dry back aluminum paste is dried, then the wafer is turned over and the front side is screen printed with the silver paste in an electrical contact pattern, which is also dried. The two materials (backside aluminum and front silver joint paste) are then co-fired in a single firing step, thereby saving one processing step. The back aluminum paste is melted ("alloy") into a continuous coating while the front side paste is sintered at high speed and high temperature on the front side of the solar cell to form a smooth low ohmic resistance conductor.

本發明係針對共燒製合金/燒結方法及用於該共燒製或其他工業方法之紅外線爐。現用之紅外線輸送機爐具有細長通道樣水平取向之加熱室，沿其長度分成許多個區域。各區域與外部環境隔絕。典型地，剛好位於入口內之第一個區域配有多個紅外線(IR)燈，接著，接下來之2或3個區域使進入之矽晶圓之溫度迅速增加至約425℃至450℃。接下來之幾個區域維持此溫度以使晶圓之溫度穩定且確保漿料之所有有機組分完全燒盡，使接點內之所有碳含量降至最低用以不增加接觸電阻。 The present invention is directed to co-fired alloy/sintering processes and infrared furnaces for use in co-firing or other industrial processes. The currently used infrared conveyor furnace has a slender channel-like horizontally oriented heating chamber divided into a number of zones along its length. The regions are isolated from the external environment. Typically, the first region located just inside the inlet is provided with a plurality of infrared (IR) lamps, and then the next two or three regions rapidly increase the temperature of the incoming wafer to about 425 ° C to 450 ° C. The next few regions maintain this temperature to stabilize the temperature of the wafer and ensure that all organic components of the slurry are completely burned out, minimizing all carbon content within the joint to minimize contact resistance.

快速燒製一般產生最佳結果，此係因為雜質來不及擴散至發射極中。因雜質擴散至摻雜Si之發射極區中之活化能一般低於銀粒子燒結，故高速燒製十分關鍵。為實現此高燒製速度，晶圓進入高紅外線強度「尖峰」區域，在該區域中晶圓之溫度快速升至700-950℃之範圍內且接著藉由許多構件冷卻，直至晶圓離開爐。晶圓不會維持在峰值溫度。更確切言之，峰寬應極小，亦即停留時間短，而上升及下降之速度斜率應陡峭。 Rapid firing generally produces the best results because the impurities are too late to diffuse into the emitter. The high-speed firing is critical because the activation energy of the impurity diffused into the emitter region of the doped Si is generally lower than that of the silver particle. To achieve this high firing rate, the wafer enters a high-intensity "spike" region where the temperature of the wafer rapidly rises to 700-950 ° C and is then cooled by many components until the wafer leaves the furnace. . The wafer will not be maintained at the peak temperature. More precisely, the peak width should be extremely small, that is, the dwell time is short, and the slope of the rise and fall speed should be steep.

然而，在紅外線爐之先前技術中，此等迫切要求並未滿足。更確切言之，高強度尖峰區域簡單地為第一區域之複本，在該第一區域中紅外線燈垂直於爐帶之縱向軸排列，亦即橫跨晶圓傳輸帶之全寬度，在該帶及其支撐系統上方與下方。因而，先前技術中存在多個處理區域中加熱晶圓之紅外線燈之極其低效使用及特徵為尖峰區域中之寬峰及緩速溫度曲線(斜率)之輕度過剩停留時間。現用爐在尖峰區域中能夠產生約80℃至約100℃/秒範圍內之溫升速度。因為峰值溫度必須接近1000℃，所以恆定輸送機傳輸速度下之現用上升速度因帶恆速移動而需要尖峰區域有一定的物理長度。當前製程之停留峰值(峰值溫度下之停留時間)亦過寬；亦即過長。 However, in the prior art of infrared ovens, such urgent requirements were not met. More specifically, the high-intensity peak region is simply a replica of the first region in which the infrared lamps are aligned perpendicular to the longitudinal axis of the furnace belt, that is, across the full width of the wafer transport belt, in the belt Its support system is above and below. Thus, the prior art has extremely inefficient use of infrared lamps that heat wafers in multiple processing regions and features a slight excess residence time characterized by broad peaks and slow temperature profiles (slopes) in the peak region. The current furnace is capable of producing a temperature rise rate in the range of from about 80 ° C to about 100 ° C / sec in the peak region. Since the peak temperature must be close to 1000 ° C, the current ascent speed at constant conveyor speeds requires a certain physical length for the peak region due to constant speed movement. The peak value of the current process (the residence time at the peak temperature) is also too wide; that is, it is too long.

現用爐之平緩曲線/寬峰特徵性製程限制對頂面之金屬接點有不良影響，由此顯著限制電池效率。重要的是出於若干原因快速完成燒 製序列。首先，燒結玻璃不能有過高流動性，否則網版印刷接觸線流動而變寬，且由此因阻擋更多電池表面之入射太陽輻射而減小有效收集面積。其次，玻璃粉不應以任何較大程度與銀粒子混合，因為此舉將使接點之串聯電阻增加。最終，所有此材料必經由SiN_x抗反射(ARC)塗層(厚度約0.15微米或為使反射最小之0.6微米目標波長之1/4)蝕刻，但不必繼續穿過先前由磷擴散於p型矽頂面上形成之「淺」摻雜Si發射極層。發射極厚度一般為0.1微米至0.5微米，但淺發射極一般在0.1微米至0.2微米之範圍內。 The gradual curve/wide peak characteristic process limitations of the current furnace have an adverse effect on the metal contacts on the top surface, thereby significantly limiting battery efficiency. It is important to complete the firing sequence quickly for several reasons. First, the sintered glass must not be excessively fluid, otherwise the screen printing contact line will flow and become wider, and thus the effective collection area will be reduced by blocking more incident solar radiation from the surface of the battery. Second, the glass frit should not be mixed with the silver particles to any degree, as this will increase the series resistance of the contacts. Ultimately, all of this material must be etched via a SiN _x anti-reflective (ARC) coating (about 0.15 microns thick or 1/4 of the 0.6 micron target wavelength that minimizes reflection), but does not have to continue through the previous diffusion of phosphorus from the p-type. A "shallow" doped Si emitter layer is formed on the top surface of the dome. The emitter thickness is typically from 0.1 microns to 0.5 microns, but the shallow emitter is typically in the range of 0.1 microns to 0.2 microns.

因此，為控制蝕刻深度，必須快速且充分地淬滅燒結。淬滅，亦即在蝕刻AR塗層及玻璃與矽基板產生良好黏著性之後防止銀粒子擴散至發射極下方之矽中(形成微晶)必須藉由快速冷卻實現。此舉十分關鍵。若銀驅入摻雜Si之發射極層中過深，則接面短。結果表明電池由於所產生電子的電路路徑短而失去效率。此情況亦稱為電池之低分路電阻特性。 Therefore, in order to control the etching depth, sintering must be quenched quickly and sufficiently. Quenching, that is, after etching the AR coating and the glass and the tantalum substrate to produce good adhesion, prevents the silver particles from diffusing into the crucible below the emitter (forming crystallites) must be achieved by rapid cooling. This move is critical. If silver is driven too deep into the emitter layer doped with Si, the junction is short. The results show that the battery loses efficiency due to the short circuit path of the generated electrons. This condition is also referred to as the low shunt resistance characteristic of the battery.

但矛盾的是，亦極其需要減慢冷卻速度用以使玻璃相退火而改良黏著性。當一起考量時，冷卻曲線看起來像此情況：由峰值燒製溫度快速冷卻至約700℃，接著緩慢冷卻以達到退火之目的，接著快速冷卻至可使晶圓以足以藉由機器人設備處理之低溫離開爐，該機器人設備必須具有橡膠化吸盤以將晶圓搬離移動式輸送機而不會對表面有損傷。 Paradoxically, it is also extremely desirable to slow down the cooling rate to anneal the glass phase to improve adhesion. When considered together, the cooling curve looks like this: rapid cooling from peak firing temperature to about 700 ° C, followed by slow cooling for annealing purposes, followed by rapid cooling to allow the wafer to be processed by robotic equipment. At low temperatures leaving the furnace, the robotic device must have a rubberized suction cup to move the wafer away from the mobile conveyor without damage to the surface.

因為存在尺寸及紅外線燈成本之約束，所以增加尖峰區域中之燈密度一般並非可行的解決辦法。另外，在尖峰區域中峰值溫度僅維持至多幾秒且下降熱特徵需為尖銳的。燈密度增加可顯著地起相反作用，因為增加密度由於產物及尖峰區域之內表面的反射而容易產生更平緩之斜率。 Increasing the lamp density in the peak region is generally not a viable solution because of the size and cost of the infrared lamp. In addition, the peak temperature is only maintained for a few seconds in the peak region and the thermal characteristics of the drop need to be sharp. An increase in lamp density can have a significant effect, as increasing density tends to produce a more gradual slope due to reflection of the product and the inner surface of the peak region.

同樣地，燈之功率增加當前亦不可行，此係因為較高輸出可能導致燈元件，尤其外部石英管過熱。當熱電偶偵測到溫度接近900℃時， 其會自動縮減燈之功率。此導致功率密度降低，使紅外線燈發射之光譜輸出發生改變(因此能量輸出較低)且致使需要減慢輸送機帶速度，因此減緩處理。此情況又致使其他區域發生波動效應。因為帶為連續的，一個區域減緩，則所有區域均減緩，因此必須調節所有區域以進行補償。減緩上游或下游區域又會影響燒製區域。例如由於熱電偶延遲或故障而使燈過熱可導致燈變形、下陷且最終損壞。此變形亦影響遞送至產物之紅外線輸出之均一性。 Similarly, an increase in the power of the lamp is currently not feasible because the higher output may cause the lamp element, especially the outer quartz tube, to overheat. When the thermocouple detects that the temperature is close to 900 ° C, It will automatically reduce the power of the lamp. This results in a reduction in power density, a change in the spectral output of the infrared lamp emission (and therefore a lower energy output) and a need to slow down the conveyor belt speed, thus slowing down the process. This situation in turn causes fluctuations in other areas. Because the belt is continuous and one area is slowed down, all areas are slowed down, so all areas must be adjusted for compensation. Slowing the upstream or downstream area will affect the firing area. Overheating the lamp, for example due to thermocouple delay or malfunction, can cause the lamp to deform, sink, and eventually become damaged. This deformation also affects the uniformity of the infrared output delivered to the product.

先前技術爐所呈現之其他問題由本發明解決。工廠佔地面積很受重視且爐設備昂貴，因此晶圓製造設施典型地為容納以平行取向排列之許多爐的單一建築組態。添加新爐需要自由佔地面積。替代方法為安裝具有可並排置放兩個或兩個以上晶圓之輸送機帶的較寬爐。因此，具有18吋寬帶之爐可處理2倍寬晶圓，亦即雙線或「雙聯」爐，佔地面積實質上小於兩個採用10吋寬帶之單線路爐。 Other problems presented by prior art furnaces are addressed by the present invention. The factory footprint is highly valued and the furnace equipment is expensive, so the wafer fabrication facility is typically a single building configuration that accommodates many furnaces arranged in parallel orientation. Adding a new furnace requires a free footprint. An alternative is to install a wider furnace with a conveyor belt that can hold two or more wafers side by side. Therefore, a 18-inch wideband furnace can handle 2x wide wafers, that is, two-wire or "double" furnaces, with a footprint that is substantially less than two single-line furnaces with 10" wideband.

然而，缺點為一個尺寸並非適合所有情況。亦即，兩條線路皆具有相同製程控制參數，由此可使產量降低或使個別電池之功率輸出經調節達到兩條線路之平均值。此外，溫度之均一性及層流氛圍控制受增加之爐寬度不利地影響。另外，當爐變寬時，較多發生紅外線燈下陷故障，此係因為其橫跨該爐在最熱點無支撐。 However, the disadvantage is that one size is not suitable for all situations. That is, both lines have the same process control parameters, thereby reducing throughput or allowing the power output of individual cells to be adjusted to average the two lines. Furthermore, temperature uniformity and laminar atmosphere control are adversely affected by the increased furnace width. In addition, when the furnace is widened, more infrared lamp sag failure occurs because it is unsupported at the hottest point across the furnace.

最終，不同批之晶圓可能需要在極不同之熱特徵下進行處理，或跨帶熱變化可能導致雙聯寬帶爐之製造損耗。在單一全寬燈之情況下，在習知爐中不可能控制每一線路。 Ultimately, different batches of wafers may need to be processed under very different thermal characteristics, or thermal changes across the strip may result in manufacturing losses in the duplex broadband furnace. In the case of a single full width lamp, it is not possible to control each line in a conventional furnace.

因此，在紅外線爐及紅外線燒製製程技術中存在以下未滿足之需要：顯著改良習知燈之淨有效加熱速率、為尖峰區域中各晶圓線提供較佳控制及熱特徵、允許爐溫及氛圍條件之控制改良、改良淬滅及退火特徵、改良爐區域中之熱均一性及改良該等爐之輸送量，同時在相同或淨減 少之爐空間下實現此等目的。對於在不增加爐寬度之情況下為兩倍寬雙聯爐中之整個區域中之個別晶圓線路提供熱特徵控制存在未滿足之需要。 Therefore, there are the following unmet needs in infrared furnace and infrared firing process technologies: significantly improving the net effective heating rate of conventional lamps, providing better control and thermal characteristics for each wafer line in the peak region, allowing furnace temperature and Controlling the improvement of ambience conditions, improving the quenching and annealing characteristics, improving the heat uniformity in the furnace zone and improving the throughput of the furnaces, while at the same or net reduction This is achieved in a small furnace space. There is an unmet need to provide thermal feature control for individual wafer lines in the entire area of a double wide duplex furnace without increasing furnace width.

因此，本發明係針對一種具有多個熱式加熱區域之輸送機或分批式紅外線爐，其包括至少一個尖峰燒製區域，其中至少一個區域縱向分成兩個以提供兩個並排晶圓處理線，各者專用於經由其輸送之晶圓之單線，其中各線可經個別控制以在彼線中提供獨特紅外線輻射特徵。廣泛地，可藉由提供一或多個分隔器將任何多晶圓寬度輸送機帶分成個別線。因此，3倍寬帶可在峰值燒製區域(及/或其他區域)藉由使用兩個分隔器而分成三條線，藉由與搖擺寬度相對應之寬度彼此橫向隔開且取向平行於爐之縱向中心線。因此，本發明係針對改良連續隧道爐中太陽能電池晶圓之金屬化燒製之設備與方法態樣。 Accordingly, the present invention is directed to a conveyor or batch infrared furnace having a plurality of thermal heating zones including at least one peak firing zone, wherein at least one zone is longitudinally divided into two to provide two side-by-side wafer processing lines Each is dedicated to a single line of wafers transported therethrough, wherein each line can be individually controlled to provide unique infrared radiation characteristics in the line. Broadly, any multi-wafer width conveyor belt can be divided into individual lines by providing one or more dividers. Thus, a 3x wideband can be split into three lines in the peak firing zone (and/or other zones) by using two dividers, laterally spaced apart from each other by the width corresponding to the rocking width and oriented parallel to the longitudinal direction of the furnace. Center line. Accordingly, the present invention is directed to an apparatus and method for improving the metallization firing of solar cell wafers in a continuous tunnel furnace.

作為本發明之設備及方法之一部分，各線裝有多個橫跨其各別線橫向排列，但不會延伸至相鄰線之摺疊紅外線燈。摺疊紅外線燈提供成對隔開之燈絲，較佳各燈絲在其各自管中。在一個較佳具體實例中，紅外線燈包含中間摺疊、自身折回呈嚴格U形組態之單管，因此饋電源並排位於爐之同一側。因此，線路1之紅外線燈可自爐之一側供電且線路2自相對側供電。線燈沿爐之中心分隔器線路在其內端得以支撐，但不要求在爐中心線下安裝電接點(地線或電源)。結果表明已分隔之各區域之各線的紅外線燈可個別控制以提供不同且獨特之紅外線及熱特徵，或在各區域可相同。另外，雙燈相距愈短，則愈強且愈不易翹曲或下陷。雙燈之長度愈短，使得其為提供高強度紅外線輻射以及快速且尖銳之燒製峰所需之光譜特徵所必需之操作電壓愈高。 As part of the apparatus and method of the present invention, each line is provided with a plurality of folded infrared lamps that are laterally aligned across their respective lines but do not extend to adjacent lines. The folded infrared lamp provides a pair of spaced filaments, preferably each filament in its respective tube. In a preferred embodiment, the infrared lamp comprises a single tube that is folded in the middle and that is folded back in a strictly U-shaped configuration, so that the feeds are placed side by side on the same side of the furnace. Therefore, the infrared lamp of line 1 can be powered from one side of the furnace and the line 2 is powered from the opposite side. The line lamp is supported at its inner end along the center of the furnace, but it is not required to install electrical contacts (ground or power) under the centerline of the furnace. The results show that the infrared lamps of the various lines of the separated regions can be individually controlled to provide different and unique infrared and thermal characteristics, or can be the same in each region. In addition, the shorter the distance between the two lamps, the stronger and the less likely to warp or sag. The shorter the length of the double lamp, the higher the operating voltage necessary to provide the spectral characteristics required for high intensity infrared radiation and fast and sharp firing peaks.

視情況，爐紅外線加熱元件可背靠不同於常見塊體絕緣材料之極高反射(大約高於約95%紅外線反射)之板型反射器元件。視情況， 燈元件可藉由將其置放於高反射背板元件之凹槽中而橫向分隔。在另一個選擇中，空氣或惰性氣體可沿凹槽表面與燈外表面之間的通道橫向引入以實現冷卻燈之作用。本發明之高反射背板有效地使諸如矽、硒、鍺或鎵類太陽能電池晶圓之高級材料之加熱速率及爐處理輸送量加倍。 Optionally, the furnace infrared heating element can be backed by a plate-type reflector element that is highly reflective (typically above about 95% infrared reflection) from conventional bulk insulating materials. Subject to availability, The light elements can be laterally separated by placing them in the grooves of the highly reflective backplate element. In another option, air or an inert gas may be introduced laterally along the passage between the surface of the groove and the outer surface of the lamp to effect the cooling of the lamp. The highly reflective backsheet of the present invention effectively doubles the heating rate and furnace throughput of advanced materials such as germanium, selenium, tellurium or gallium solar cell wafers.

本發明亦包括使太陽能電池製造改良之所有製程控制系統，及作為良好控制製程操作之結果而實現太陽能電池效率改良之燒製方法，此等製程操作之特徵為尖銳之溫度上升及下降溫度曲線、極銳之峰及淬滅及退火溫度特徵之精確控制。本發明之改良控制貫穿整個燒盡、尖峰、淬滅、淬滅中止及退火(回火)區域以改良接點形成、減少氫釋氣、控制蝕刻深度且改良黏著性以及改良電池輸出效率。 The present invention also includes all process control systems for improving solar cell manufacturing, and firing methods for improving solar cell efficiency as a result of good control of process operations, characterized by sharp temperature rise and fall temperature profiles, Extremely sharp peaks and precise control of quenching and annealing temperature characteristics. The improved control of the present invention extends throughout the burnout, spike, quenching, quenching, and annealing (tempering) regions to improve joint formation, reduce hydrogen outgassing, control etch depth, improve adhesion, and improve cell output efficiency.

本發明之摺疊燈陣列係以例如具有間隔於紅外線燈陣列後之平坦高反射板之縱向分隔之尖峰區域模組實施。典型地，摺疊紅外線燈彼此間隔約_吋(外部之間)，且其後反射板(就爐取向之頂燈及底燈而言，分別位於燈上方或下方)的距離範圍為約1吋至4吋，較佳為1吋至2.5吋。 The folded lamp array of the present invention is implemented, for example, by a peak area module having a longitudinal separation of flat high reflection plates spaced behind the array of infrared lamps. Typically, the folded infrared lamps are spaced apart from each other by about 吋 (between the outside), and the distance between the rear reflectors (above or below the lamp for the furnace-oriented ceiling and bottom lights) is about 1 吋 to 4吋, preferably from 1吋 to 2.5吋.

在平坦反射板之一個選擇中，該板可輕輕產生橫向波紋，其中波紋寬度足以容納摺疊燈，且波紋之凸緣平行於燈之外部安置。置放摺疊燈之波紋之凹型有助於將紅外線輻射聚焦反射於晶圓表面。在另一個選擇中，可使用具有平行深通道之多個高反射元件，或在單一高反射元件中形成之深通道，其中屏蔽凸緣安置於各對相鄰摺疊燈之間。對於大多數製造操作而言，該等通道無需用紅外線透明傳輸窗覆蓋。視情況，在燈處或燈附近橫跨爐引入之空氣可用以冷卻該等燈。在使用通道之情況下，冷卻空氣可以層流方式沿通道引入，且自保留於中心線分隔器中之與摺疊燈之內端相鄰之中心埠排出。或者，冷卻空氣方向可逆轉，由中心線至爐側面。 In one option of a flat reflector, the panel can gently create a transverse corrugation wherein the corrugation width is sufficient to accommodate the folded lamp and the flange of the corrugation is disposed parallel to the exterior of the lamp. The concave shape of the folded light of the folding lamp helps to focus the infrared radiation on the surface of the wafer. In another option, a plurality of highly reflective elements having parallel deep channels, or deep channels formed in a single high reflective element, wherein the shielding flanges are disposed between each pair of adjacent folded lamps, may be used. For most manufacturing operations, the channels do not need to be covered with an infrared transparent transmission window. Depending on the circumstances, air introduced across the furnace at or near the lamp can be used to cool the lamps. In the case of a channel, cooling air may be introduced in a laminar flow along the channel and exit from a center 保留 remaining in the centerline divider adjacent the inner end of the folded lamp. Alternatively, the direction of the cooling air can be reversed from the centerline to the side of the furnace.

紅外線燈加熱模組可單獨使用，位於爐輸送機帶上方以將高強度紅外線輻射引入太陽能電池晶圓之表面上。視情況，每一區域使用一 對紅外線燈加熱模組，彼此面對安置且隔開，一者處於爐輸送機帶上方且一者處於下方，以將產物處理區域界定於其之間，每一模組與爐中其他區域不同。 The infrared lamp heating module can be used alone and placed above the furnace conveyor belt to introduce high intensity infrared radiation onto the surface of the solar cell wafer. Use one for each area, as appropriate The infrared lamp heating modules are placed facing each other and spaced apart, one above the furnace conveyor belt and one below, to define the product processing area between them, each module being different from other areas in the furnace .

在本發明之峰(尖峰)燒製區域中使用呈平板、波紋狀或深通道組態之高反射元件使燈之功率增至基本上滿額。此舉致使加熱速率由約160℃/秒增至約200℃/秒，亦即使習知100瓦特/吋燈之加熱速率有效翻倍，而不會導致燈調低、關閉或變形。另外，此舉使輸送機帶速度增加且從而使產物之輸送量及產量增加。僅舉例而言，儘管現用輸送機爐以約150吋/分鐘之輸送機速度進行操作，但使用高反射元件使速度翻倍至約300吋/分鐘，且彼增速在900℃±40℃範圍內之尖峰區域峰值溫度下發生。儘管一些現用輸送機爐聲稱可以高達約250吋/分鐘進行操作，但其不能在高功率密度下進行操作。 The use of highly reflective elements in a flat, corrugated or deep channel configuration in the peak (spike) firing zone of the present invention increases the power of the lamp to substantially full. This results in an increase in the heating rate from about 160 ° C / sec to about 200 ° C / sec, even though the heating rate of the conventional 100 watt/xenon lamp is effectively doubled without causing the lamp to be turned down, turned off or deformed. In addition, this increases the conveyor belt speed and thereby increases the throughput and throughput of the product. By way of example only, although the current conveyor furnace operates at a conveyor speed of about 150 吋/min, the use of highly reflective elements doubles the speed to about 300 吋/min and the rate of increase is 900 ° C ± 40 ° C. Occurs within the peak temperature of the peak region. Although some current conveyor furnaces claim to operate up to about 250 mph, they cannot operate at high power densities.

本發明之輸送機爐包含形成腔室之外罩或外殼，其用諸如纖維、纖維板或耐火磚之習知絕緣形式絕緣。加熱模組安置在絕緣外殼內。多晶圓寬輸送機帶(多線帶)位於上加熱模組與下加熱模組之間，且將適當電源及控制系統整合於爐系統中。燈平面之間的空間為承載進行燒製之高級材料基板之輸送機帶的通道。本文所述之例示性處理燒製區域充當尖峰區域。在此具體實例中，輸送機帶為2晶圓寬帶，且尖峰燒製區域沿中心線縱向裝有分隔器以提供兩條並排線，其中每一者可得以獨立控制，因為每一者藉由上文所述本發明之摺疊燈進行加熱。中心分隔器可僅提供於區域之上半部中，或可提供於上半部與下半部中。 The conveyor furnace of the present invention comprises a chamber outer casing or casing that is insulated by conventional insulation such as fibers, fiberboard or refractory bricks. The heating module is placed in an insulative housing. A multi-wafer wide conveyor belt (multi-line belt) is located between the upper heating module and the lower heating module, and integrates the appropriate power and control system into the furnace system. The space between the lamp planes is the channel carrying the conveyor belt of the advanced material substrate that is fired. The exemplary processing firing zone described herein acts as a spike region. In this particular example, the conveyor belt is a 2-wafer wideband, and the spike firing zone is longitudinally mounted with dividers along the centerline to provide two side-by-side lines, each of which can be independently controlled, as each is The folding lamp of the present invention described above is heated. The center divider may be provided only in the upper half of the area or may be provided in the upper and lower halves.

亦應瞭解多個爐區域，直至所有區域皆可包括中心分隔器，使得單一輸送機帶組態成多個區域中之多條並排線。另外，超過一個區域可在帶上方、帶下方或兩處裝有摺疊燈及高反射元件中之一者或兩者。亦即，本發明之爐可組態成在一些區域中，全寬燈之混合位於多晶圓寬帶之 上方或下方或上方與下方，在一或多個區域中組合使用摺疊半寬雙燈，其中上部、下部或兩者均沿中心線分隔而形成個別線。因此，舉例而言，在多晶圓寬輸送機爐中，燒盡區段或區域經組態在帶上方及下方具有全寬燈且無中心線分隔器，尖峰燒製區域模組可經組態在上部分或/及下部分具有中心線分隔器且使用摺疊紅外線燈，淬滅區域無燈且中心分隔器視情況存在，淬滅中止區域在上區段包括全寬燈且在下區段無燈，且冷卻、回火及退火區段僅可視情況在上區段包括全寬燈。 Multiple furnace zones should also be known until all zones can include a central divider such that a single conveyor belt is configured as multiple side-by-side lines in multiple zones. Additionally, more than one region may be provided with one or both of a folded lamp and a highly reflective element above the belt, below the belt, or at both locations. That is, the furnace of the present invention can be configured such that in some regions, the mixture of full width lamps is located in multi-wafer broadband Above or below or above and below, a folded half-width double lamp is used in combination in one or more regions, wherein the upper, lower or both are separated along the centerline to form individual lines. Thus, for example, in a multi-wafer wide conveyor furnace, the burnout section or zone is configured with a full width lamp above and below the strip and without a centerline divider, and the spike firing zone module can be grouped The state has a centerline divider in the upper part or/and the lower part and uses a folded infrared lamp, the quenching area has no light and the center divider exists as the case exists, and the quenching stop area includes a full width lamp in the upper section and no in the lower section The lamp, and the cooling, tempering and annealing sections may only include full width lamps in the upper section, as appropriate.

來自上及/或下紅外線燈之輻射能藉由較佳由機械加工或鑄造之高級白色氧化鋁陶瓷材料形成之高反射元件引入或聚焦(在使用波紋狀或凹槽表面組態之情況下)於遍及整個製程區域(燒盡、尖峰及淬滅/中止區域)中之製程加熱通道中以提供極強烈之加熱環境。尖峰燒製區域一般在700℃至1000℃之範圍內進行操作。 Radiation from upper and/or lower infrared lamps can be introduced or focused by highly reflective elements preferably formed from machined or cast high-grade white alumina ceramic materials (in the case of corrugated or grooved surface configurations) Provides a very intense heating environment throughout the process heating channels throughout the process area (burnout, spikes, and quench/stop zones). The spike firing zone is typically operated at a temperature in the range of 700 °C to 1000 °C.

上及下燈功率可獨立地或分組調節以在各區域中及在將輸送機帶寬度分隔之情況下在個別線中實現精確溫度梯度控制。溫度控制可使用基於熱電偶之溫度調節或電壓控制之功率調節實現。藉由電壓控制之功率調節為較佳，因為此舉由於一直維持穩定之燈功率及可再現、可確定且恆定之光譜輸出而給予最快加熱速率及更一致之加熱結果。相比之下，波動燈輸出響應於典型地用於溫度維持功能之PID控制系統。 The up and down lamp powers can be adjusted independently or in groups to achieve precise temperature gradient control in individual lines in each zone and with the conveyor belt width separated. Temperature control can be achieved using power conditioning based on thermocouple temperature regulation or voltage control. Power regulation by voltage control is preferred because it gives the fastest heating rate and more consistent heating results due to consistently maintaining stable lamp power and a reproducible, determinable and constant spectral output. In contrast, the undulating lamp output is responsive to a PID control system typically used for temperature maintenance functions.

在本發明之一個重要態樣中，本發明之方法包括對功率、冷卻系統(冷卻空氣流速、量及流徑及熱交換參數)及帶速進行操作組態以不僅彼此獨立地控制區域或選定區域中之線，亦控制個別燈，以沿著貫穿多個區域之材料製程流徑縱向地實現多種熱特徵，產生具有顯著改良之效能及效率之太陽能電池。 In an important aspect of the invention, the method of the invention includes operating the power, cooling system (cooling air flow rate, amount and flow path and heat exchange parameters) and belt speed to control regions or select independently of each other. The lines in the area also control individual lamps to achieve a plurality of thermal characteristics longitudinally along the material flow path through the plurality of regions, resulting in solar cells having significantly improved performance and efficiency.

為控制蝕刻深度，必須快速且充分地淬滅尖峰燒製區域中顯現之燒結。淬滅，亦即在蝕刻AR塗層及玻璃與矽基板產生良好黏著性之後 防止銀粒子擴散至發射極下方之矽中(形成微晶)必須藉由快速冷卻實現。此舉十分關鍵。若銀進入摻雜Si之發射極層過深，則接面短。結果表明電池由於所產生電子的電路路徑短而失去效率。此情況亦稱為電池之低分路電阻特性。 In order to control the etching depth, it is necessary to quickly and sufficiently quench the sintering which appears in the peak firing region. Quenching, ie after etching the AR coating and the glass and tantalum substrate to produce good adhesion Preventing the diffusion of silver particles into the crucible below the emitter (forming crystallites) must be achieved by rapid cooling. This move is critical. If the silver enters the doped Si emitter layer too deep, the junction is short. The results show that the battery loses efficiency due to the short circuit path of the generated electrons. This condition is also referred to as the low shunt resistance characteristic of the battery.

此淬滅在淬滅區域中實現，特徵為使用利用晶圓之頂部及/或底部引入之具有空氣平面之小心控制之壓縮空氣量的空氣刀總成使溫度由約800℃至約1000℃範圍內之峰值區域燒製溫度快速降至約500℃至700℃之範圍內，典型地在一秒或兩秒內降低200℃-400℃。 This quenching is achieved in the quenching zone and is characterized by the use of an air knife assembly with a carefully controlled compressed air volume with an air plane introduced at the top and/or bottom of the wafer to provide a temperature ranging from about 800 ° C to about 1000 ° C. The peak region firing temperature within is rapidly reduced to a range of about 500 ° C to 700 ° C, typically 200 ° C - 400 ° C in one or two seconds.

另外，亦極其需要減緩或中止淬滅區域中產生之快速冷卻用以使玻璃相退火而改良黏著性。此舉在緊隨淬滅區域後之視情況存在之中止淬滅區域中實現。此區域包括有限量之燈，典型地為僅位於晶圓接觸面上方之全輸送機帶寬燈，但可視情況包括晶圓下方之燈。使用此等燈會中止快速冷卻、會使溫度穩定在450℃-700℃之範圍內，從而在隨後下游退火區域中可提供緩慢的回火冷卻，溫度由約450℃-700℃降至爐出口端約30℃-100℃之範圍內。視情況且較佳地，將冷卻空氣引入此中止淬滅區域以改良對溫度特徵之控制。亦即，重要的是控制冷卻空氣及燈用以存在少量或無冷卻過度，之後在退火區域中彈回(一般呈如數學平方根運算符號√之形狀的曲線)。在三個區域(峰值、淬滅及中止淬滅)中控制燈功率及空氣之結果為具有短暫停留(約一秒或兩秒)之尖銳上升及下降峰及進入中止淬滅區域之下游的退火區域中之光滑曲線過渡。在多晶圓寬帶中，在峰值燒製區域中使用中心線分隔器產生兩條或兩條以上線之情況下，該等分隔器可延伸至淬滅及中止淬滅區域用以精確控制峰值燒製區域中之各別線中溫度不同之彼等製程步驟。儘管回火/退火趨於敏感度減小且通常不需要分隔器，但其仍可如特定製程溫度特徵所需一般使用。 In addition, there is a great need to slow or stop the rapid cooling that occurs in the quenching zone to anneal the glass phase to improve adhesion. This is achieved in the quenching zone in the presence of the quenching zone. This area includes a limited number of lamps, typically a full conveyor bandwidth lamp located only above the wafer contact surface, but may include a lamp below the wafer, as appropriate. The use of these lamps will stop the rapid cooling and stabilize the temperature in the range of 450 ° C to 700 ° C, thus providing slow tempering cooling in the subsequent downstream annealing zone, and the temperature is lowered from about 450 ° C to 700 ° C to the exit of the furnace. It is in the range of about 30 ° C to 100 ° C. Depending on the situation and preferably, cooling air is introduced into the quenching quench zone to improve control of the temperature characteristics. That is, it is important to control the cooling air and the lamp for little or no overcooling and then bounce back in the annealed region (generally in the shape of a mathematical square root symbol √). The control of lamp power and air in three regions (peak, quenching and quenching quenching) results in sharp rise and fall peaks with a short pause (approximately one second or two seconds) and annealing downstream into the quenching quench zone Smooth curve transitions in the area. In multi-wafer broadband, where two or more lines are produced using a centerline divider in the peak firing zone, the dividers can be extended to the quenching and quenching quenching zones for precise control of peak burns. The process steps of the different temperatures in the individual lines in the zone. Although tempering/annealing tends to be less sensitive and generally does not require a separator, it can still be used as required for a particular process temperature profile.

在回火以改良黏著性之退火區段中使晶圓溫度維持在低於 450℃-700℃之範圍內；接近出口，使晶圓進一步冷卻至約30℃-100℃以允許機器人拾取器或其他搬運設備或人員自輸送機帶移除晶圓及/或自晶圓離開帶轉移到達之編組台移除/移至編組台。 Maintain wafer temperature below in tempering to improve adhesion in the anneal section In the range of 450 ° C - 700 ° C; near the exit, the wafer is further cooled to about 30 ° C - 100 ° C to allow the robotic picker or other handling equipment or personnel to remove the wafer from the conveyor belt and / or leave the wafer The marshalling station with the transfer arrival is removed/moved to the marshalling station.

當一起考量時，在加熱與冷卻速率均在每秒約80℃至200℃範圍內之本發明方法中，可獨立於任何選定及經組態之溫度特徵小心控制各線之溫度。燒製及下游區域中之所得受控溫度特徵曲線看上去一般如此：自約400℃-600℃之燒盡區域出口之溫度開始快速加熱至約850℃-950℃之燒製區域中明確定義之尖銳峰值溫度，之後由於淬滅區域中之淬滅步驟由峰值燒製溫度快速冷卻降至約400℃-500℃。此快速的斜升加熱及斜降冷卻之總時間為約1-2秒。中止淬滅步驟之後典型地為緩慢冷卻用於退火目及最終冷卻以使晶圓以足以藉由機器人設備搬運之低溫離開爐。緩慢受控退火冷卻視情況存在。稱為峰值停留時間之峰值溫度之時間小於1秒。峰值特徵之尖銳程度可進行控制且可藉由控制冷卻以及選擇性規劃帶速、峰值區域中個別燈之功率及下游區域、尤其如上文所述之淬滅及中止淬滅區域之冷卻的能力來實現。如為進行燒製之特定產物提供預選定之熱特徵所需，本發明之爐系統所有區域及利用一或多個分隔器在多晶圓寬輸送機帶上產生線之區域中之各別線均可進行組態。 When considered together, in the process of the invention in which both heating and cooling rates are in the range of from about 80 ° C to about 200 ° C per second, the temperature of the wires can be carefully controlled independently of any selected and configured temperature profile. The resulting controlled temperature profile in the firing and downstream regions appears to be generally the case: the temperature at the exit of the burnout zone from about 400 ° C to 600 ° C begins to rapidly heat up to a firing zone of about 850 ° C to 950 ° C. The sharp peak temperature is then rapidly cooled from peak firing temperature to about 400 ° C to 500 ° C due to the quenching step in the quenching zone. The total time for this rapid ramp heating and ramp down cooling is about 1-2 seconds. The quenching step is typically followed by slow cooling for annealing and final cooling to allow the wafer to exit the furnace at a low temperature sufficient to be carried by the robotic device. Slow controlled annealing cooling exists as appropriate. The time referred to as the peak temperature of the peak dwell time is less than 1 second. The sharpness of the peak characteristics can be controlled and can be controlled by cooling and selectively planning the belt speed, the power of individual lamps in the peak region, and the ability of the downstream region, particularly the quenching and suspension quenching regions described above, to cool. achieve. All areas of the furnace system of the present invention and individual lines in the area where the lines are produced on the multi-wafer wide conveyor belt using one or more dividers are required to provide pre-selected thermal characteristics for the particular product being fired. Configuration is possible.

另外，因為燈設計或材料及漿料組合物(前接點漿料與背電場漿料)將來可供改良，所以本發明之個別線控制將輕易適應此項技術中之該等進展以提供改良之方法與更有效之電池。 In addition, because the lamp design or material and slurry composition (front joint paste and back electric field slurry) can be improved in the future, the individual line control of the present invention will readily adapt to such advances in the art to provide improvements. The method and the more efficient battery.

10‧‧‧紅外線製程爐 10‧‧‧Infrared process furnace

11‧‧‧製程區域 11‧‧‧Process area

12‧‧‧進行燒製之晶圓 12‧‧‧Finished wafers

13‧‧‧輸送機帶 13‧‧‧Conveyor belt

14‧‧‧燒盡區段 14‧‧‧ Burnout section

16‧‧‧尖峰區域模組 16‧‧‧ spike regional module

18‧‧‧淬滅區域(有空氣刀) 18‧‧‧Quenching area (with air knife)

20‧‧‧淬滅中止區域 20‧‧‧Quenching the suspension area

22‧‧‧冷卻回火/退火區域 22‧‧‧Cooling tempering/annealing area

24‧‧‧入口/出口擋板 24‧‧‧Inlet/Exit baffle

26‧‧‧冷卻空氣 26‧‧‧Cooling air

27‧‧‧充氣間 27‧‧‧Inflatable Room

28‧‧‧廢氣 28‧‧‧Exhaust

32a、32b‧‧‧側壁 32a, 32b‧‧‧ side wall

34U、34L‧‧‧高反射元件加熱燈模組 34U, 34L‧‧‧High reflection component heating lamp module

36‧‧‧高反射氧化鋁陶瓷板 36‧‧‧Highly reflective alumina ceramic plate

38‧‧‧摺疊高強度紅外線燈 38‧‧‧Folding high-intensity infrared lamps

40‧‧‧高強度紅外線加熱燈 40‧‧‧High-intensity infrared heating lamp

42‧‧‧末端配件 42‧‧‧End fittings

44‧‧‧用於燈夾持配件之孔洞 44‧‧‧ Holes for lamp holder fittings

45‧‧‧視情況存在之燈冷卻空氣流徑 45‧‧‧Light cooling air flow path depending on the situation

46‧‧‧視情況存在之燈排出埠 46‧‧‧Lights discharged as appropriate

47‧‧‧循環管道熱氣出口 47‧‧‧Circular duct hot gas outlet

48‧‧‧燈之電連接器 48‧‧‧Electric connector for lamp

50‧‧‧金屬外殼 50‧‧‧Metal casing

52‧‧‧耐火絕緣材料 52‧‧‧ Refractory insulation

53‧‧‧擋流板 53‧‧‧Baffle

54‧‧‧視情況存在之排出歧管 54‧‧‧Exhaust manifolds as appropriate

55‧‧‧埠 55‧‧‧埠

56‧‧‧反射器通道 56‧‧‧Reflector channel

58‧‧‧區域端壁中之輸送機帶間隙 58‧‧‧Conveyor belt gap in the end wall of the area

62‧‧‧入口冷卻空氣歧管 62‧‧‧Inlet cooling air manifold

64‧‧‧高反射表面 64‧‧‧Highly reflective surface

70‧‧‧燈絲 70‧‧‧filament

80‧‧‧末端件 80‧‧‧End pieces

82‧‧‧燈之彎曲末端 82‧‧‧Bend of the lamp

86‧‧‧輸送機中心線 86‧‧‧Conveyor center line

88‧‧‧燒盡區域中紅外線燈之埠 88‧‧‧After burning the infrared light in the area

90‧‧‧淬滅區域空氣刀總成 90‧‧‧Quenching area air knife assembly

92‧‧‧壓縮空氣供給管 92‧‧‧Compressed air supply pipe

94‧‧‧來自空氣刀之氣流平面 94‧‧‧Air plane from air knife

96‧‧‧退火區域中之側壁空氣入口 96‧‧‧ sidewall air inlet in the annealed area

98‧‧‧熱交換線路(水冷式) 98‧‧‧Heat exchange line (water-cooled)

100‧‧‧引風機 100‧‧‧ induced draft fan

102‧‧‧退火區域中之底部空氣進入埠 102‧‧‧Bottom of air entering the annealed area埠

104‧‧‧區域分隔壁 104‧‧‧Regional partition wall

106‧‧‧縱向分隔器 106‧‧‧Vertical divider

108‧‧‧分隔壁中或外壁32a、32b上之凸緣 108‧‧‧Flange in the middle or outer wall 32a, 32b

110‧‧‧分隔壁之帽；支撐反射器36 110‧‧‧Folding wall cap; support reflector 36

112‧‧‧熱電偶 112‧‧‧ thermocouple

112a‧‧‧用於線A之熱電偶 112a‧‧‧ Thermocouple for line A

112B‧‧‧用於線B之熱電偶 112B‧‧‧ Thermocouple for line B

114‧‧‧摺疊燈內部末端配件(彎曲末端) 114‧‧‧Folding lamp internal end fittings (bend end)

118‧‧‧反射板與端壁104之間的空隙 118‧‧‧ Between the reflector and the end wall 104

120‧‧‧爐區域頂板或底板 120‧‧‧Front area top or bottom plate

200‧‧‧製程操作方法 200‧‧‧Processing methods

202‧‧‧對帶及區域溫度特徵進行組態 202‧‧‧Configure zone and zone temperature characteristics

204‧‧‧區域組態 204‧‧‧Regional configuration

206‧‧‧BOZ組態 206‧‧‧BOZ configuration

208‧‧‧峰值區域組態 208‧‧‧ Peak Area Configuration

210‧‧‧淬滅區域組態 210‧‧‧Quenching area configuration

212‧‧‧中止淬滅區域組態 212‧‧‧Stop quenching area configuration

214‧‧‧退火區域組態 214‧‧‧ Annealed area configuration

216‧‧‧燒製方法 216‧‧‧Selling method

218‧‧‧BOZ熱電偶讀數是否在界限內？ Is the 218‧‧‧ BOZ thermocouple reading within the limits?

220‧‧‧保持功率 220‧‧‧ Keep power

222‧‧‧PID控制器調節功率 222‧‧‧ PID controller adjusts power

224‧‧‧峰值區域交流電壓讀數比較 224‧‧‧Compared peak area AC voltage readings

226‧‧‧保持電壓特徵 226‧‧‧ Maintain voltage characteristics

228‧‧‧PID控制器調節燈電壓 228‧‧‧ PID controller adjusts lamp voltage

230‧‧‧淬滅區域溫度特徵比較 Comparison of temperature characteristics in the quenching zone of 230‧‧

232‧‧‧保持空氣刀之氣流 232‧‧‧Keep air knife airflow

234‧‧‧重設排氣或空氣流值 234‧‧‧Reset exhaust or air flow values

236‧‧‧中止淬滅溫度特徵比較 236‧‧‧Complete comparison of quenching temperature characteristics

238‧‧‧保持區域中之燈電壓及退火區域中之風機操作 238‧‧‧Maintenance of the lamp voltage in the area and fan operation in the annealing zone

240‧‧‧調節燈電壓 240‧‧‧Adjust lamp voltage

242‧‧‧退火區域溫度特徵比較 242‧‧‧Comparison of temperature characteristics in the annealing zone

244‧‧‧保持區域中之風機操作 244‧‧‧Maintenance of fan operation in the area

246‧‧‧調節風機空氣流以重建溫度特徵 246‧‧• Adjust fan air flow to reconstruct temperature characteristics

CL‧‧‧爐之中心線 CL‧‧‧ furnace center line

LA‧‧‧線A LA‧‧‧Line A

LB‧‧‧線B LB‧‧‧Line B

NR-1‧‧‧燈導線之非輻射區段 Non-radiation section of NR-1‧‧‧ lamp wires

NR-2‧‧‧燈導線之非輻射區段 Non-radiation section of NR-2‧‧‧ lamp wires

R‧‧‧燈之輻射燈絲區段 Radiation filament section of R‧‧‧ lamps

本發明參考圖式進行更詳細地描述，其中：圖1為一系列四個側視線路圖，首先圖1A中顯示燒盡區域之下游採用至少一個高反射峰值燒製區域、繼之以淬滅區域、中止淬滅區域及退火區域之本發明爐之示意性側視圖；圖1B為燒盡區域之垂直剖面視圖；圖1C 為第一具體實例中之採用凹槽反射性元件之峰值燒製區域、淬滅區域及中止淬滅區域以及過渡至退火區域之垂直剖面視圖；且圖1D為退火區域之垂直剖面視圖；圖2為頂部及底部採用高反射元件模組且顯示至燒盡區域之循環的例示性峰值加熱區域之示意性等角視圖；圖3為爐模組內部之等角視圖，在此視圖中向上看峰值燒製區域之上部，說明本發明之線分隔器及用於線A及B中之每一者的各別可獨立控制之摺疊高強度紅外線燈陣列。圖4為用於加熱線且具有摺疊末端配件以懸置於線分隔器上之摺疊紅外線燈之平面圖；圖5為圖4之摺疊紅外線燈之側視圖，其顯示加熱及未加熱之區段，以及支撐於中心分隔器上之摺疊燈及支撐於該等燈上之反射板元件；圖6為本發明爐之橫向剖面視圖，其顯示使用上與下線分隔器及在輸送機帶之上方與下方使用摺疊紅外線燈；及圖7為本發明方法之組態及方法態樣之流程圖，其顯示控制參數及反饋迴路。 The present invention is described in more detail with reference to the drawings in which: FIG. 1 is a series of four side-view circuit diagrams, first showing that at least one high-reflection peak firing region is downstream of the burn-out region in FIG. 1A , followed by quenching A schematic side view of the furnace of the present invention in the region, the quenching zone and the annealing zone; FIG. 1B is a vertical sectional view of the burnout zone; and FIG. 1C is a peak fired zone using the groove reflective component in the first embodiment. , the quenching region and the quenching region and the vertical cross-sectional view of the transition to the annealing region; and FIG. 1D is a vertical cross-sectional view of the annealing region; FIG. 2 is a cycle of the high-reflection element module at the top and bottom and displayed to the burnout region Illustrative isometric view of an exemplary peak heating zone; Figure 3 is an isometric view of the interior of the furnace module, in which the upper portion of the peak firing zone is viewed upwards, illustrating the wire separator of the present invention and for line A And each of the B independently adjustable folding high intensity infrared lamp arrays. Figure 4 is a plan view of a folded infrared lamp for a heating wire and having a folded end fitting for overhanging the wire divider; Figure 5 is a side view of the folded infrared lamp of Figure 4 showing the heated and unheated sections, And a folding lamp supported on the center divider and a reflector member supported on the lamp; Figure 6 is a transverse cross-sectional view of the furnace of the present invention showing the use of the upper and lower dividers and above and below the conveyor belt A folded infrared lamp is used; and FIG. 7 is a flow chart of a configuration and method aspect of the method of the present invention, showing control parameters and feedback loops.

以下實施方式舉例說明本發明，但不限制本發明之範疇、等效物或原理。本說明書顯然能使熟習此項技術者獲得且使用本發明，且描述本發明之若干具體實例、改編、變化、替代及用途。 The following examples are intended to illustrate, but not to limit, the scope of the invention. This description will be apparent to those skilled in the art of <RTIgt;the</RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt;

就此而言，本發明用若干圖式說明，且複雜性足以致其許多部分、相互關係及子組合根本不能用單個專利型圖式完全說明。為清晰且簡明扼要起見，若干圖式顯示示意性或可省略的部分，該等部分在該圖式中並非為說明本發明之所揭示特定特徵、態樣或原理所必需的。舉例而言，熟習此項技術者習知之燈、制動器及升降波紋管之多個電動及氣動連接未 示於圖中。因此，一個特徵可顯示於一個圖式中，且另一個特徵將在另一個圖式中顯現出。 In this regard, the present invention has been described in a number of figures, and the complexity is sufficient that many of its parts, relationships, and sub-combinations are not fully illustrated by a single patent pattern. For the sake of clarity and conciseness, the drawings are intended to be illustrative and may be omitted, and are not required to illustrate the particular features, aspects or principles disclosed herein. For example, a plurality of electric and pneumatic connections of lamps, brakes, and lifting bellows that are familiar to those skilled in the art are not Shown in the picture. Thus, one feature may be shown in one figure and the other feature in the other.

圖1A示意性說明輸送機爐10，其包含傳輸摻雜太陽能電池晶圓12通過製程區域11，亦即連續穿過多個爐製程模組或區段之輸送機帶13，該等爐製程模組或區段包括：燒盡區段14；繼之以峰值燒製區段16；其下游依序為淬滅區段18；中止淬滅區段20；及回火或退火區段22，後者採用空氣及/或水冷卻。各爐區段中之各別製程區域部分取彼區段之名稱；因此，燒盡、峰值；淬滅、中止淬滅及退火「區域」係指輸送機帶橫穿之製程體積以及彼區段之爐硬體。 1A schematically illustrates a conveyor furnace 10 that includes a conveyor belt 13 that transports a doped solar cell wafer 12 through a process zone 11, that is, continuously through a plurality of furnace process modules or sections, such furnace process modules Or section includes: a burnout section 14; followed by a peak fire section 16; a downstream thereof followed by a quench section 18; a quenching section 20; and a tempering or annealing section 22, the latter Cool with air and / or water. The part of each process zone in each furnace section is the name of the section; therefore, burnout, peak; quenching, quenching and annealing "zone" refers to the process volume of the conveyor belt crossing and the section Furnace hardware.

示意性顯示之輸送機帶13由左至右移動且定義水平中心線(在其上方為區段或區域之上模組且在其下方為下模組)以及縱向；因此，與帶行進垂直之方向定義為橫向或橫向尺寸。由於圖式之比例，故圖1之製程區域14、16、18、20及22中並未顯示產物。入口及視情況存在之出口擋板24a、24b分別安置於爐之入口端及出口端。典型地，存在上游乾燥器，圖中未示。可在例如區域16與18之間提供中間擋板。 The conveyor belt 13 is schematically shown moving from left to right and defining a horizontal centerline (above which is a module above the section or area and below which is the lower module) and longitudinal; therefore, perpendicular to the belt travel The direction is defined as a horizontal or horizontal dimension. Due to the scale of the drawings , no product is shown in the process areas 14, 16, 18, 20 and 22 of FIG. The inlet and, if appropriate, outlet baffles 24a, 24b are respectively disposed at the inlet and outlet ends of the furnace. Typically, there is an upstream dryer, not shown. An intermediate baffle can be provided, for example, between regions 16 and 18.

燒盡區段包括多個三或四加熱模組14a-14d，且燒製區段包括一或多個尖峰區域模組16。注意，燒盡、峰值及中止淬滅模組可為高反射元件型紅外線燈加熱模組，或僅尖峰區域模組16可採用高反射氧化鋁板加摺疊管型紅外線燈38。 The burnout section includes a plurality of three or four heating modules 14a-14d, and the firing section includes one or more spike zone modules 16. Note that the burnout, peak and stop quenching modules can be high reflective component type infrared lamp heating modules, or only the peak area module 16 can be a highly reflective alumina plate plus a folded tube type infrared lamp 38.

圖1A及1B亦顯示熱空氣45由尖峰區域高反射氧化鋁板元件模組16循環回至上游燒盡區域14中，以大大改良能量效率。空氣在爐之上游端經由充氣間27a作為廢氣28a離開煙道。另外，淬滅區域18中注入之空氣經由充氣間27b作為廢氣28b排出。圖1B及1C顯示自中止淬滅區域20之底部引入及自退火區域22之底部及/或側面引入之環境冷卻空氣26允許控制彼等區域中之溫度特徵。注意，在圖1C中，中止淬滅區域20之 底部引入之冷卻空氣26經由彼區域與退火區域22之間的區域分隔壁104e中之輸送機帶間隙58離開。或者，中止淬滅區域20可獨立地藉由其自身煙道(圖中未示)排出。在退火區域22中，明顯如圖1D中所示，可使用例如水歧管之熱交換系統輔助冷卻(除冷卻空氣26之外)。冷卻空氣26經由充氣間27c作為廢氣28c離開區域22。 FIGS. 1A and 1B also show the hot air 45 by the high reflection peak area alumina plate element module 16 is recycled back to the upstream region 14 burnout to significantly improving the energy efficiency. The air leaves the flue at the upstream end of the furnace via the plenum 27a as the exhaust gas 28a. Further, the air injected in the quenching area 18 is discharged as the exhaust gas 28b via the inflating chamber 27b. 1B and 1C show that ambient cooling air 26 introduced from the bottom of the quenching zone 20 and introduced from the bottom and/or sides of the annealed zone 22 allows control of temperature characteristics in those zones. Note that in FIG. 1C , the cooling air 26 introduced at the bottom of the quenching quenching zone 20 exits via the conveyor belt gap 58 in the zone dividing wall 104e between the region and the annealing zone 22. Alternatively, the quenching zone 20 can be independently discharged by its own flue (not shown). In the annealing zone 22, as clearly shown in 1D, the heat may be used, for example a water manifold system of switching the auxiliary cooling (cooling air in addition to 26). Cooling air 26 exits region 22 via exhaust chamber 27c as exhaust gas 28c.

現轉向更詳細的圖1B，此圖以縱剖面顯示在左側區域分隔壁104a具有示意性顯示為寬平坦箭頭之輸送機帶13之入口的燒盡區域之左側(右側對稱相同)。輸送機帶路徑由於其朝右橫穿該區域而由輸送機中心線86顯示。帶上方及下方為***燈40之埠88，在圖中示意性顯示為部分管及軸位置點用以不遮掩氣流特徵。可能視情況存在之上熱循環歧管54U及下熱循環歧管54L具有間隔之孔口47以自下游峰值區域排出熱空氣45，如圖2中清晰所見。另外，壓縮空氣或惰性氣體26可經由線路92注入以有助於控制溫度及排出燒盡之揮發物及煙霧。此熱循環空氣及控制氣體形成通常層狀流，如由右側延伸至左上部之大條帶45所示，其中其作為廢氣28a自煙道歧管27a及煙道管排出。 Turning now to Figure 1B in more detail, this figure is shown in longitudinal section on the left side of the burn-out area of the left side partition wall 104a having the entrance of the conveyor belt 13 schematically shown as a wide flat arrow (the right side is symmetrically identical). The conveyor belt path is shown by the conveyor centerline 86 as it traverses the area to the right. Above and below the strip is the entanglement 88 of the insertion lamp 40, which is shown schematically in the figure as a partial tube and shaft position points for unobstructed airflow characteristics. Above may vary depending on the presence of a heat cycle manifolds 54U and 54L thermal cycling manifold 47 having an aperture interval in the peak zone downstream from the hot air exhaust 45, as clearly seen in FIG. 2. Additionally, compressed air or inert gas 26 may be injected via line 92 to help control temperature and discharge burnout volatiles and fumes. The hot circuit air and control gas form a generally laminar flow, as shown by the large strip 45 extending from the right to the upper left, wherein it is discharged as exhaust gas 28a from the flue manifold 27a and the flue duct.

圖1C自左側所示之燒盡區域14d之右端下游續接至右側所示之退火區域22之左端(向右開始為區域分隔壁104e)。如前所述，輸送機帶之中心線顯示為86。經由區域分隔壁104b中之狹槽58離開燒盡區域14d，帶13承載製程區域11中之產物電池晶圓12(為清晰起見圖中未示)進入高反射元件峰值燒製區域16，此詳細顯示於圖2、3及6中。在此圖1C中，作為剛好位於中心線左側之垂直面之剖視圖，未顯示縱向分隔器；其顯示於圖3及6中。 1C continues from the right end of the burnout region 14d shown on the left side to the left end of the annealing region 22 shown on the right side (starting to the right is the region partition wall 104e). As previously mentioned, the centerline of the conveyor belt is shown as 86. Leaving the burnout region 14d via the slot 58 in the zone dividing wall 104b, the tape 13 carries the product battery wafer 12 in the process zone 11 (not shown for clarity) into the high-reflection element peak firing zone 16, which The details are shown in Figures 2, 3 and 6 . In this FIG. 1C , a longitudinal divider is not shown as a cross-sectional view of the vertical plane just to the left of the centerline; it is shown in FIGS. 3 and 6.

續接圖1C，此處以視情況存在之深通道組態顯示之背靠峰值燒製區域之高反射元件36之紅外線燈(圖中未示)使產物晶圓之溫度由典型地在400℃-600℃、較佳450℃-500℃範圍內之燒盡溫度升至選定峰值溫 度以使印刷於頂面上之接觸線之銀熔融且使助熔劑燒結且使背面漿料形成合金。峰值溫度基於接點及背面漿料組合物之特性進行選擇。 Continuing with Figure 1C, the infrared lamp (not shown) of the high-reflective element 36, which is backed by the peak firing region, is shown in the deep channel configuration as the case may be, such that the temperature of the product wafer is typically at 400 °C. The burnout temperature in the range of 600 ° C, preferably 450 ° C - 500 ° C rises to the selected peak temperature The degree of melting of the silver of the contact line printed on the top surface and sintering of the flux and alloying of the backside paste. The peak temperature is selected based on the characteristics of the joint and backside slurry compositions.

高反射氧化鋁元件峰值區域模組使太陽能電池晶圓以超過80℃/秒至高達約200℃/秒範圍內，較佳高於約100℃/秒至約160℃/秒範圍內之速率典型地快速燒製至約750℃至約950℃之範圍。彼燒製速率為當前爐能力之約兩倍，且在無不當燈故障之情況下允許加熱速率達至多最大燈功率定額，同時以較大操作效率提供約2倍之太陽能電池輸送量。因此，高反射元件紅外線燈模組提供高溫升斜率，由此防止氫自基板電池中過度脫氣。此峰值燒製區域中之燈可以子集供電或個別地進行程式化供電用以在接近出口區域分隔壁104c處達到峰值溫度。 The highly reflective alumina element peak region module allows the solar cell wafer to be at a rate in the range of from more than 80 ° C / sec up to about 200 ° C / sec, preferably from about 100 ° C / sec to about 160 ° C / sec. The ground is rapidly fired to a range of from about 750 ° C to about 950 ° C. The firing rate is approximately twice the current furnace capacity and allows for a heating rate up to a maximum lamp power rating without undue lamp failure, while providing approximately 2 times the solar cell delivery with greater operational efficiency. Therefore, the high reflection element infrared lamp module provides a high temperature rise slope, thereby preventing excessive degassing of hydrogen from the substrate battery. The lamps in the peak firing zone may be powered by a subset or individually programmed to provide a peak temperature near the exit region dividing wall 104c.

峰值區域終止於區域分隔壁104c，且具有產物之帶立即進入壁104c與壁104d之間界定之淬滅區域18。壓縮空氣或惰性氣刀總成90包含側向間隔之壓縮空氣管92，其中具有裂縫以形成空氣平面94且導引至帶上之晶圓產物。由此使溫度極其快速地下降幾百攝氏度，從而防止熔融銀接點蝕穿進入經摻雜發射極層中。冷卻曲線斜率同樣陡峭，因此允許控制溫度曲線峰之寬度，亦即接點熔融及燒結形成溫度下之停留。一起考量時，高反射元件峰值區域中之燈功率控制及快速受控淬滅允許精確控制此臨界峰值停留製程步驟。 The peak region terminates in the zone dividing wall 104c and the strip of product immediately enters the quenching zone 18 defined between the wall 104c and the wall 104d. The compressed air or inert gas knife assembly 90 includes laterally spaced compressed air tubes 92 having cracks to form an air plane 94 and directed to the wafer product on the belt. This causes the temperature to drop very rapidly several hundred degrees Celsius, thereby preventing the molten silver contacts from penetrating into the doped emitter layer. The slope of the cooling curve is also steep, thus allowing control of the width of the peak of the temperature profile, i.e., the melting of the joint and the residence at the sintering formation temperature. When considered together, lamp power control and fast controlled quenching in the peak region of the high reflective element allows precise control of this critical peak dwell process step.

冷卻空氣在離開該刀之後加熱且獨立於其他氣流、作為熱空氣28b自煙道充氣間及煙囪27b排出。對於區域壁104c與104d之間的淬滅區域之既定輸送機速度及長度而言，可控制壓縮空氣溫度及體積以為特定工業製程提供任何預先選定量之冷卻。溫度在幾秒內降低400℃至600℃完全在本發明之爐的能力範圍內。 The cooling air is heated after exiting the knives and is discharged from the flue gas plenum and the chimney 27b as hot air 28b, independent of the other air streams. For a given conveyor speed and length of the quenching zone between the zone walls 104c and 104d, the compressed air temperature and volume can be controlled to provide any preselected amount of cooling for a particular industrial process. Decreasing the temperature from 400 ° C to 600 ° C in a few seconds is well within the capabilities of the furnace of the present invention.

為確保不存在過冷(亦稱為「超限」)，在視情況存在之中止淬滅區域20中藉由紅外線燈40與視情況存在之經由擋板自下方進入之輔助 冷卻空氣26之組合中止淬滅。如在其他燈區域中，可輕易地控制此等燈之功率以提供任何程度之熱量，用以曲線光滑過渡至其後區域22中所要之退火溫度以進行回火且促進良好黏著性。彼情況發生於剛好位於區域分隔器104e之下游(此圖式之右邊)之退火區域22中。注意，中止淬滅與退火區域之間的狹槽58大，從而允許空氣在不發生渦流的情況下流入下游區域22。 In order to ensure that there is no overcooling (also referred to as "overrun"), there is an auxiliary in the quenching zone 20, as the case may be, by means of the infrared lamp 40 and optionally via the baffle. The combination of cooling air 26 stops quenching. As in other lamp areas, the power of such lamps can be easily controlled to provide any degree of heat for a smooth transition to the desired annealing temperature in the subsequent region 22 for tempering and to promote good adhesion. This situation occurs in the annealing zone 22 just downstream of the zone divider 104e (to the right of this figure). Note that the slot 58 between the quenching and annealing regions is discontinued, allowing air to flow into the downstream region 22 without turbulence.

圖1D說明退火區域22之特徵，其中太陽能電池晶圓在預選定之溫度下維持足以促進黏著性的一段時間，且接著冷卻以在區域出口壁104f之下游進行卸載。此區域中之溫度特徵藉由經由底部入口102及/或經由側壁埠96引入之入口空氣26之組合選擇性控制。空氣在其冷卻晶圓基板時變熱且作為熱廢氣28c自充氣間27c排出，且此舉可藉由使用引風機100來控制且輔助。視情況，可使用水冷式熱交換線路98U及/或98L實現進一步冷卻。 1D illustrates the features of the anneal zone 22 in which the solar cell wafer is maintained at a preselected temperature for a period of time sufficient to promote adhesion and then cooled to unload downstream of the zone exit wall 104f. The temperature characteristics in this region are selectively controlled by a combination of inlet air 26 introduced through bottom inlet 102 and/or via side wall 埠 96. The air heats up as it cools the wafer substrate and is discharged as hot exhaust gas 28c from the aeration chamber 27c, and this can be controlled and assisted by using the induced draft fan 100. Further cooling may be achieved using water-cooled heat exchange lines 98U and/or 98L, as appropriate.

無及有乾燥器區段之製備光伏打電池之金屬化爐之兩個實施例(實施例1及實施例2)分別示於下表1中。 Two examples (Example 1 and Example 2) of a metallization furnace for the preparation of photovoltaic cells without a dryer section are shown in Table 1 below, respectively.

圖2以簡化細節顯示電池12之尖峰燒製區域16採用平坦表面高反射元件36U及36L之例示性高強度紅外線燈加熱模組。製程區域11中之輸送機帶13之路徑及方向藉由箭頭顯示。製程區域界定於如所示分別藉由側壁32a、32b中之凹槽夾持就位之上高反射加熱元件(紅外線燈)模組34U與下高反射加熱元件(紅外線燈)模組34L之間。加熱模組包含分別安置於上及下紅外線加熱燈管40之上方及下方之高反射平板元件36U、36L(其可視情況包括其中形成之波紋或通道)。燈40藉由接收於各別側壁32a、32b之孔洞44中之中心夾持型陶瓷配件42橫向夾持。提供一系列視情況存在之排出孔46a-46n，每一燈(或若使用則為通道)一個排出孔，以排出目前之熱冷卻空氣或氣體。在此具體實例中，排出孔或埠46沿加熱模組之縱軸集中以允許冷卻空氣45經由間隔之縱向擋板53中之孔55橫向排出，且由此處經由管道54回到上游，如箭頭之次序所示。該等管道包括間隔孔47，沿其將熱空氣45向上游引回至如圖1所示之燒盡區域。尖峰區域燈之間進行加熱、向上游返回至燒盡區域中之此空氣循環為本發明之實質熱交換及能量節約特徵。 2 shows, in simplified detail, an exemplary high intensity infrared lamp heating module employing flat surface high reflective elements 36U and 36L in peak firing zone 16 of battery 12. The path and direction of the conveyor belt 13 in the process area 11 is indicated by arrows. The process area is defined between the highly reflective heating element (infrared lamp) module 34U and the lower high reflection heating element (infrared lamp) module 34L held in place by the recesses in the side walls 32a, 32b, respectively, as shown . The heating module includes highly reflective plate members 36U, 36L (which may optionally include corrugations or channels formed therein) disposed above and below the upper and lower infrared heating lamps 40, respectively. The lamp 40 is laterally clamped by the center-clamping ceramic fitting 42 received in the holes 44 of the respective side walls 32a, 32b. A series of discharge orifices 46a-46n are provided as appropriate, one for each lamp (or channel if used) to discharge the current hot cooling air or gas. In this particular example, the bleed holes or turns 46 are concentrated along the longitudinal axis of the heating module to allow the cooling air 45 to exit laterally via the apertures 55 in the spaced longitudinal baffles 53 and from there via the conduit 54 back upstream, such as The order of the arrows is shown. Such pipes include spaced apertures 47, back along the hot air 45 introduced upstream to the region as shown in FIG burned FIG. This air circulation, which is heated between the peak area lights and returned upstream to the burnout area, is a substantial heat exchange and energy saving feature of the present invention.

各燈之電連接器以48顯示。在上高反射元件板36U及下高反射元件板36L之上方安置耐火絕緣材料，典型地為市售陶瓷纖維板，在此視圖中未顯示。此模組在適當位置裝配於爐殼50中以形成製程區域區段、燒盡區段14a-14d或燒製區段16(諸如尖峰區域)或中止淬滅區域模組20中之一者。圖2說明全輸送機帶寬單紅外線燈管之用途，且因此說明用 於輸送機帶用多線傳輸一倍寬或兩倍或兩倍以上寬晶圓之情況的爐模組，但其中所有線之熱特徵均相同。亦即，全寬燈不允許個別線之間有不同熱特徵控制。彼特徵說明於圖3-7中。 The electrical connectors of the lamps are shown at 48. A refractory insulating material, typically a commercially available ceramic fiberboard, is placed over the upper high reflective element plate 36U and the lower high reflective element plate 36L, which is not shown in this view. The module is assembled in the furnace shell 50 in place to form one of the process zone section, the burnout section 14a-14d or the fire section 16 (such as a peak region) or the quenching zone module 20. Figure 2 illustrates the use of a full conveyor bandwidth single-infrared lamp, and thus illustrates a furnace module for conveyor belts that use multiple wires to transfer multiple times or twice or more of a wide wafer, but all of which are The thermal characteristics are the same. That is, the full width lamp does not allow for different thermal feature control between individual lines. The characteristics are illustrated in Figures 3-7 .

圖3顯示爐模組之內部，在此視圖中向上看峰值燒製區域之上部，說明本發明之線分隔器106及用於線A(圖中之左側)及線B(圖中之右側)中之每一者的各別可獨立控制之摺疊高強度摺疊紅外線燈38U陣列。燈在其內部末端114摺疊用以兩個管並排安置成為雙燈。其藉由擱在石英帽110上而在其內部末端114夾持就位。燈之外部末端延伸通過各別側壁32a(左側)及32b(右側)且終止於延伸通過有孔板68之末端配件42。因為紅外線燈管自身折回，所以電端48並排安置，且此燒製模組中各線之陣列之所有燈均自爐之一側進入，如所示。 Figure 3 shows the inside of the furnace module. In this view, the top of the peak firing zone is viewed upwards, illustrating the line divider 106 of the present invention and for line A (left side in the figure) and line B (right side in the figure). Each of the individual independently controllable folding high-intensity folding infrared lamps 38U array. The lamp is folded at its inner end 114 for the two tubes to be placed side by side into a double lamp. It is held in place at its inner end 114 by resting on the quartz cap 110. The outer ends of the lamps extend through respective side walls 32a (left side) and 32b (right side) and terminate in end fittings 42 that extend through apertured plate 68. Since the infrared tubes themselves are folded back, the electrical ends 48 are placed side by side, and all of the lamps of the array of wires in the firing module are accessed from one side of the furnace as shown.

如圖3中所示，三折(兩折)燈38示於所說明之例示性峰值燒製區域模組的各線之燈陣列中，但應瞭解該等模組區域中可採用更多或更少之燈。另外，燈可獨立供電，用以各線陣列中之所有或不足所有燈均可供電，或各燈之功率經調節以有助於在圖3中所說明之燒製區域中形成尖銳之短持續時間峰值燒製溫度。箭頭A及B分別表示線A及線B中之每一者穿過燒製區域16之行進方向。最終燒盡區域模組14d及淬滅區域模組18分別顯示於圖頂部及底部。 As shown in Figure 3, folded (two-fold) the lamp 38 shown in the illustrated exemplary embodiment of the peak firing zone of the lamp array for each module in line, but it should be understood that these modules may be employed in greater or lesser area Less light. In addition, the lamps can be powered independently, with or without all of the lamps in each line array, or the power of each lamp can be adjusted to help create a sharp short duration in the firing zone illustrated in FIG. Peak firing temperature. Arrows A and B indicate the direction of travel of each of line A and line B through firing zone 16, respectively. The final burnout area module 14d and the quenching area module 18 are shown at the top and bottom of the figure, respectively.

另外，圖3及6顯示反射板元件36經石英條110以一定間隔支撐於燈之上方。反射板為矩形的，其長軸取向平行於中心線分隔壁。在此具體實例中，反射板之長度比此燒製區域16之全縱向長度短，亦即比橫向區域端壁104b與104c之內表面之間的距離短。由此提供小包118以允許空氣或其他專用燒製氛圍氣體流入爐處理區域11中(參見圖2)，爐處理區域11界定於上反射板36與下反射板(圖中未示)之間或上反射板與爐區域之下部16L之底板之間。如圖5中所顯見，燈之內部末端擱在中心分隔 壁106上之石英帽條110上，且內部反射板36c之內緣擱在固定於中心分隔壁106之支撐塊108上。外部反射板36a可類似地擱在固定於外壁32(圖中未示)之塊體上，或如所示該壁可有凹口以接收板緣。中間支撐條110分別接合於各別橫向端壁104b及104c之狹槽中(參見圖3)。 In addition, Figures 3 and 6 show that the reflector element 36 is supported above the lamp at regular intervals via the quartz strip 110. The reflector is rectangular with its long axis oriented parallel to the centerline dividing wall. In this embodiment, the length of the reflector is shorter than the full longitudinal length of the firing zone 16, i.e., shorter than the distance between the inner surfaces of the lateral region end walls 104b and 104c. A packet 118 is thus provided to allow air or other dedicated firing atmosphere gas to flow into the furnace processing zone 11 (see Figure 2 ), which is defined between the upper reflector 36 and the lower reflector (not shown) or The upper reflector is between the bottom plate and the bottom plate 16L below the furnace zone. As apparent from FIG. 5, the interior of the lamp end cap resting on the center strip 110 points on the quartz partition wall 106, and the inner edge 36c of the reflection plate resting on the support fixed to the central partition wall 106 of block 108. The outer reflector 36a can similarly rest on a block that is secured to the outer wall 32 (not shown) or that the wall can have a notch to receive the rim as shown. The intermediate support strips 110 are respectively engaged in the slots of the respective lateral end walls 104b and 104c (see Figure 3 ).

圖4及5分別以俯視圖及側視圖顯示用於線加熱之摺疊紅外線燈總成38，其包含入口管部分38-1及返回管部分38-2。在彎曲組態中，各部分之管並排安置且可接觸。在入口(此圖之右端)，管彎頭(摺疊)82夾持於配件114中，該配件外部末端終止於扁平突出物80用以其可擱在且在塊體或凸緣108上或縱向線分隔器總成106之帽條110上夾持就位。外部末端(亦即穿過爐之側壁32伸出之末端)終止於配件42，從而使燈導線48暴露用以連接至供電電纜(圖中未示)。內部及外部燈末端配合元件114、42典型地為諸如氧化鋁之陶瓷材料，但亦可由堇青石或塊滑石製成以依適當取向支撐且夾持燈。 4 and 5 show a folded infrared lamp assembly 38 for line heating in a top view and a side view, respectively, including an inlet tube portion 38-1 and a return tube portion 38-2. In the curved configuration, the tubes of the various sections are placed side by side and accessible. At the inlet (the right end of the figure), the tube elbow (fold) 82 is clamped in the fitting 114, the outer end of the fitting terminating in the flat projection 80 for resting thereon and on the block or flange 108 or longitudinally The cap 110 of the wire divider assembly 106 is clamped into place. The outer end (i.e., the end extending through the side wall 32 of the furnace) terminates in the fitting 42 such that the lamp wire 48 is exposed for connection to a power supply cable (not shown). The inner and outer lamp end mating elements 114, 42 are typically ceramic materials such as alumina, but may also be made of cordierite or block talc to support and hold the lamp in the proper orientation.

關於燈之總長(在摺疊之前)，燈絲分成五個區段：第一非輻射區段，其包含低電阻直導線；第一捲曲高電阻輻射區段；第二非輻射低電阻短區段；第二捲曲高電阻輻射區段；及第三非輻射區段。第一及第三非輻射區段終止於電源線48。當將燈管摺疊時，如圖4及5中所示，第一及第三非輻射區段(圖中之NR-1)之長度剛好足以穿過爐之側壁32伸出。第一及第二捲曲輻射區段目前共延且並排安置(圖中之R)，其長度L足夠寬以為安裝有燈之各別線提供高強度紅外線輻射。第二非輻射區段(圖中之NR-2)安置於雙彎燈管之內部末端的彎頭82中(參見圖4)且由內部末端配件114覆蓋。 Regarding the total length of the lamp (before folding), the filament is divided into five sections: a first non-radiative section comprising a low resistance straight conductor; a first crimped high resistance radiation section; a second non-radiative low resistance short section; a second crimped high resistance radiation segment; and a third non-radiative segment. The first and third non-radiative sections terminate in a power line 48. When the tube is folded, as shown in FIG. 4 and 5, the length of the first and third non-radiant section (figure of NR-1) through the side wall of the furnace just enough of 32 protrudes. The first and second crimped radiating sections are now coextensive and side by side (R in the figure), the length L of which is sufficiently wide to provide high intensity infrared radiation for the individual wires to which the lamps are mounted. The second non-radiative section (NR-2 in the figure) is placed in the elbow 82 at the inner end of the double-bend tube (see Figure 4 ) and is covered by the inner end fitting 114.

圖6詳細顯示峰值燒製區域模組16之橫截面，包括上區段16U與下區段16L。爐金屬外殼以50顯示，耐火絕緣材料層以52顯示。如所示，安置於模組中心線CL86處之線分隔器106U及106L分別提供於上 區段16U及下區段16L中。彼情況將輸送機帶13之全寬分成兩條線：左線A及右線B，分別用於處理晶圓12a及12b，如所示，該等線邊緣支撐於帶13之斜翼上。上燈38U之內部末端配件114、80(參見圖4、5)擱在由比分隔壁寬之分隔器帽條110之寬度所產生之凸緣上。下燈38L之彼等配件114、80擱在各線中配合於分隔器側壁中之塊體或凸緣塊108上。燈之外部末端穿過各別側壁32a及32b中之成形通道88，藉由側板68夾持就位，外部末端配件42穿過該側板伸出。各燈絲之末端導線48連接至藉由爐控制系統控制而程式化之電源以提供功率，從而產生在各別線A或線B中傳輸之既定晶圓產物所需之預選熱特徵。 Figure 6 shows in detail the cross section of the peak firing zone module 16, including the upper section 16U and the lower section 16L. The furnace metal casing is shown at 50 and the refractory insulation layer is shown at 52. As shown, line dividers 106U and 106L disposed at module centerline CL86 are provided in upper section 16U and lower section 16L, respectively. In other cases, the full width of the conveyor belt 13 is divided into two lines: a left line A and a right line B, which are used to process the wafers 12a and 12b, respectively, which are supported on the inclined wings of the belt 13 as shown. The inner end fittings 114, 80 (see Figs. 4, 5 ) of the upper lamp 38U rest on a flange created by the width of the divider cap 110 that is wider than the dividing wall. The fittings 114, 80 of the lower lamp 38L rest in each of the wires to fit over the block or flange block 108 in the side wall of the divider. The outer end of the lamp passes through the forming channel 88 in each of the side walls 32a and 32b, held in place by the side panels 68 through which the outer end fitting 42 extends. The end wires 48 of each filament are connected to a power source programmed by a furnace control system to provide power to produce the preselected thermal characteristics required for a given wafer product transported in respective line A or line B.

熱電偶112a及112b向下伸入各線A及線B中進入上區段16U中。熱電偶感測線穿過各線中安置於上燈38U上方之高反射板36中之準直孔且終止於相鄰燈之間。如此具體實例中所示，下燈38L之下方不使用高反射板，但應瞭解，若製程需要則可使用該板。舉例而言，在進行P與B摻雜晶圓側面之共燒製製程之情況下，可使用下反射板。在此具體實例中，反射板36以其長軸垂直於爐中心線來取向，且如所示擱在凸緣或塊體108上。 The thermocouples 112a and 112b extend downward into each of the lines A and B to enter the upper section 16U. The thermocouple sensing line passes through the collimating holes in each of the lines disposed in the high reflection plate 36 above the upper lamp 38U and terminates between adjacent lamps. As shown in this particular example, the high reflector is not used below the lower lamp 38L, but it should be understood that the panel can be used if required by the process. For example, in the case of a co-firing process on the side of a P- and B-doped wafer, a lower reflector can be used. In this particular example, the reflector 36 is oriented with its long axis perpendicular to the centerline of the furnace and rests on the flange or block 108 as shown.

如圖3及6中所示，輸送機以縱向水平路徑傳輸晶圓穿過爐，經由各區域之各別端壁104中之輸送機帶間隙58進入且離開各連續區域。圖6亦說明上及下區段中之空氣入口歧管62及排出歧管47分別用於引入冷卻空氣或氣體26及排出熱空氣之用途。 As shown in FIGS. 3 and 6, a horizontal longitudinal conveyor path through transfer of the wafer furnace, through each respective conveyor belt gap area 104 of the end wall 58 into and out of the continuous region. Figure 6 also illustrates the use of air inlet manifold 62 and exhaust manifold 47 in the upper and lower sections for introducing cooling air or gas 26 and for discharging hot air, respectively.

圖6之實施例顯示裝有翼線以在間隔點沿其下邊緣支撐兩個並排晶圓12a及12b之全寬輸送機帶，及藉由位於中心之縱向分隔器總成106分成兩條線(線A及B)之峰值燒製區域16。然而，應瞭解，輸送機帶可寬足以支撐3個或3個以上並排排列之晶圓，用以多個縱向分隔器可用於選定區域中以為每一各別晶圓線提供個別熱處理區。因此，本發明包 括多個並排線中之每一者的個別熱特徵控制，其中晶圓以均一速率在單帶上進行傳輸。亦即，所有線之傳輸速率均相同，但熱特徵藉由燈功率控制而加以改變以使選定紅外線輻射曝露於每一線。 The embodiment of Figure 6 shows a full width conveyor belt with wings attached to support two side-by-side wafers 12a and 12b along its lower edge at intervals, and is divided into two lines by a centrally located longitudinal divider assembly 106. Peak firing zone 16 (lines A and B). However, it should be understood that the conveyor belt can be wide enough to support three or more wafers arranged side by side with a plurality of longitudinal dividers available for use in selected areas to provide individual heat treatment zones for each individual wafer line. Accordingly, the present invention includes individual thermal feature control for each of a plurality of side-by-side lines in which wafers are transported on a single band at a uniform rate. That is, the transmission rates of all lines are the same, but the thermal signature is varied by lamp power control to expose selected infrared radiation to each line.

因此，在單處理爐中，可對單帶進行不同輻射/熱處理，例如對已以不同方式預處理之不同類型之晶圓或晶圓線。一條線路(在一條線中)可為在一種類型或厚度之基板上進行之P摻雜晶圓之金屬化燒製，不同線中之第二線路可為P及B摻雜晶圓之正面及背面之共燒製，不同線中之第三線路可為藉由不同製程摻雜或包括紫外線預處理之晶圓之燒製，及多條線路中之每一者之類似處理。亦即，對於每一條線而言，每一條線路上處理之晶圓可相同或不同。 Thus, in a single processing furnace, different radiation/heat treatments can be performed on a single strip, such as different types of wafers or wafer lines that have been pretreated in different ways. One line (in one line) can be metallized for P-doped wafers on a substrate of one type or thickness, and the second of the different lines can be the front side of the P and B doped wafers The co-firing of the back side, the third of the different lines may be the firing of wafers doped by different processes or including ultraviolet pretreatment, and similar processing of each of the plurality of lines. That is, for each line, the wafers processed on each line may be the same or different.

對於平坦(如圖3及6中所示)或波紋狀具體實例而言，高反射元件36之厚度典型地為約1/4吋，但如圖1C中所示，在深通道之情況下，厚度可為約2-3cm。高反射元件為表面高度光滑且紅外線反射超過約95%、較佳97-99%之高氧化鋁白色陶瓷材料，耐受超過2000℉之溫度且可購得。視情況，高反射板36可夾持於安裝於頂板上之分隔壁106U中之水平狹槽中，該板***其中以均等地伸入線A與線B中。高反射板之橫向延伸長度長於各別線中傳輸之晶圓12a及12b之外邊緣。 For flat (e.g., shown in FIG. 3 and 6) or specific example corrugated, highly reflective element 36 of a thickness of typically about 1/4 inch, but as shown in 1C, a case where the depth in the channel, The thickness can be about 2-3 cm. The highly reflective element is a high alumina white ceramic material having a highly smooth surface and an infrared reflectance of greater than about 95%, preferably 97-99%, which is resistant to temperatures in excess of 2000 °F and is commercially available. Optionally, the high reflection plate 36 can be clamped in a horizontal slot in the partition wall 106U mounted on the top plate, the plate being inserted therein to equally extend into the line A and the line B. The laterally extending length of the highly reflective plate is longer than the outer edges of the wafers 12a and 12b transported in the respective lines.

在一個重要替代具體實例中，可將高反射氧化鋁陶瓷材料塗佈於高溫陶瓷絕緣材料上(例如藉由塗漆、噴灑或注漿)，諸如市售緻密剛性陶瓷纖維板，且燒製成玻璃狀或近玻璃狀緻密高反射塗層。在使用通道之情況下，可將通道鑄造、成型或機械加工(例如藉由研磨)於板中，且此後可用高反射組合物塗佈且燒製。 In an important alternative embodiment, the highly reflective alumina ceramic material can be applied to a high temperature ceramic insulating material (eg, by painting, spraying or grouting), such as a commercially available dense rigid ceramic fiberboard, and fired into a glass. Shaped or nearly glassy dense high reflective coating. Where channels are used, the channels may be cast, formed or machined (e.g., by grinding) in a sheet, and thereafter coated and fired with a highly reflective composition.

燈之縱向、水平中心間距可視製程操作需要而改變。因此，不僅存在燈之個別功率控制，且其間距亦可改變。一起考量時，其提供容許溫度特徵普遍且基本上連續可變的功能，使得本發明之高反射元件加熱 區域模組16輕易地針對多種工業製程加以組態。在上燈38U之上方及視情況在下燈38L之下方使用平坦高反射板36之情況下，典型地不沿燈引入層流冷卻空氣。 The longitudinal and horizontal center-to-center spacing of the lamp can be changed as needed for the process operation. Therefore, not only does the individual power control of the lamp exist, but the spacing can also vary. When considered together, it provides a function that allows temperature characteristics to be universal and substantially continuously variable, such that the highly reflective elements of the present invention are heated The regional module 16 is easily configured for a variety of industrial processes. In the case where the flat high reflection plate 36 is used above the upper lamp 38U and optionally below the lower lamp 38L, the laminar cooling air is typically not introduced along the lamp.

圖7為顯示「燒製」太陽能電池晶圓或可如圖1-6中所示經由本發明之爐系統進行處理之其他工業產物之爐區域組態及操作製程之流程圖。當執行、起始、監測及調節爐系統之操作以完成本文所說明及所述之燒製方法時，如本文所述，爐區域組態及操作所依據之方法、與操作者及其他人之溝通、網路實現之管理及爐操作及一或多個資料庫中保存之存檔歷史典型地在軟體中以電腦可執行之指令來實現。本發明系統之伺服器可以一或多個電腦來實現，經組態而具有伺服器軟體以負責安全專用網路，或經組態而具有網際網路之站點以提供靜態的一般資訊性頁面且產生並提供顯示選定文件及影像陣列之動態頁面，其經定製而有助於本文所述操作及方法。動態頁面根據個別爐操作者要求定製且可經由可能連接網際網路之存取裝置(台式及膝上型電腦、網路電腦等)響應於授權之已認證使用者之個別需要即時產生。網路可連接至網際網路以能夠進行網際網路實現之管理及操作。 FIG. 7 is "fired" solar cell wafers or other zone of the furnace as shown in a flowchart of process and product of the industrial process Configuring the operating system of the furnace via the present invention Figures 1-6. When performing, initiating, monitoring, and adjusting the operation of the furnace system to accomplish the firing methods described and illustrated herein, as described herein, the method of furnace area configuration and operation, and the operator and others Communication, network implementation management and furnace operations, and archive history maintained in one or more databases are typically implemented in software in computer-executable instructions. The server of the system of the present invention can be implemented by one or more computers, configured with server software to be responsible for a secure private network, or configured to have an Internet site to provide a static general information page. And generating and providing a dynamic page displaying selected files and image arrays that are customized to facilitate the operations and methods described herein. The dynamic pages are tailored to individual furnace operator requirements and can be generated instantly in response to the individual needs of authorized authenticated users via access devices (desktops and laptops, network computers, etc.) that may be connected to the Internet. The network can be connected to the Internet to enable management and operation of the Internet.

本發明之電腦可以一起實現系統及網路之系統架構組態，例如一或多個伺服器電腦、資料庫(例如關係、元資料結構及分層)電腦、儲存電腦、路由器、介面及外圍輸入及輸出裝置。本發明系統中所用之電腦典型地包括至少一個處理器及記憶體與總線耦接。總線可為任何適合總線結構中任何一或多者，包括使用許多總線架構及協議中之任一者的記憶體總線或記憶體控制器、外圍總線及處理器或局部總線。記憶體典型地包括揮發性記憶體(例如RAM)及固定及/或可移除之非揮發性記憶體。非揮發性記憶體可包括(但不限於)ROM、閃光卡、硬碟驅動器(包括RAID陣列中之驅動器)、軟碟、小型驅動器、壓縮碟驅動器、記憶條、PCMCIA 卡、磁帶、光學驅動器(諸如CD-ROM驅動器、WORM驅動器、RW-CDROM驅動器等)、DVD驅動器、磁光驅動器及其類似物。不同記憶體類型儲存資訊及影像，其包括電腦可讀指令、區域組態模板、組態個別燈或燈組之模板、資料結構、程式模組、操作系統及電腦所用之其他資料。 The computer of the present invention can implement system and network system architecture configuration together, such as one or more server computers, databases (such as relationship, metadata structure and layering), computer, storage computer, router, interface and peripheral input. And output device. A computer for use in the system of the present invention typically includes at least one processor and memory coupled to the bus. The bus can be any one or more of any suitable bus structure, including a memory bus or memory controller, a peripheral bus, and a processor or local bus using any of a number of bus architectures and protocols. Memory typically includes volatile memory (such as RAM) and fixed and/or removable non-volatile memory. Non-volatile memory can include, but is not limited to, ROM, flash card, hard drive (including drives in a RAID array), floppy disk, mini drive, compact disc drive, memory stick, PCMCIA Cards, tapes, optical drives (such as CD-ROM drives, WORM drives, RW-CDROM drives, etc.), DVD drives, magneto-optical drives, and the like. Different memory types store information and images, including computer readable instructions, regional configuration templates, templates for configuring individual lights or light groups, data structures, program modules, operating systems, and other materials used by computers.

網路介面耦接至總線，以為資料通信網路(LAN、WAN及/或網際網路)提供介面，以視需要在多個現場電腦、路由器、授權使用者/組織之計算裝置、及支持系統之服務/產品供應商、及客戶之中進行資料交換。該系統亦包括至少一個外圍介面耦接至總線以與經組態之個別外圍裝置進行通信，諸如鍵盤、PDA、膝上型電腦、蜂巢式電話、小鍵盤、觸控板、滑鼠裝置、軌跡球、掃描器、印表機、揚聲器、麥克風、記憶體媒體讀取器、書寫板、攝影機、數據機、網路卡、RF、光纖及紅外線收發器及其類似物。 The network interface is coupled to the bus to provide an interface for the data communication network (LAN, WAN, and/or the Internet) to be used in multiple on-site computers, routers, authorized user/organization computing devices, and support systems as needed Data exchange between service/product suppliers and customers. The system also includes at least one peripheral interface coupled to the bus for communicating with configured individual peripheral devices, such as a keyboard, PDA, laptop, cellular phone, keypad, trackpad, mouse device, track Balls, scanners, printers, speakers, microphones, memory media readers, tablets, cameras, modems, network cards, RF, fiber optic and infrared transceivers and the like.

記憶體中可儲存許多程式模組，包括OS、伺服器系統程式、HSM系統程式、應用程式及其他程序模組及資料。在網路環境中，程式模組可分佈於若干與網路耦接之計算裝置中且視需要來使用。當執行程式時，程式至少部分載入電腦記憶體中且含有實現操作、計算、比較(例如特定參數(例如溫度)之感測信號值對臨限值)、存檔、分選、篩選、分類、格式化、呈現、印刷及通信功能及本文所述製程之指令。 A number of program modules can be stored in the memory, including OS, server system programs, HSM system programs, applications and other program modules and materials. In a network environment, program modules can be distributed among a number of computing devices coupled to the network and used as needed. When executing a program, the program is at least partially loaded into the computer's memory and contains operations, calculations, comparisons (eg, sensing signal values versus thresholds for specific parameters (eg, temperature)), archiving, sorting, screening, classification, Formatting, rendering, printing, and communication functions and instructions for the processes described herein.

使用者、操作資料關係(包括操作歷史)、操作及相關資料類型儲存於一或多組資料記錄中，其可經組態成為關係資料庫(或亦為元資料類型、分層、網路或其他類型資料庫)，其中資料記錄組織於表中。該等記錄可依據預定及可選擇之關係而彼此選擇性相關，用以例如一個表中之資料記錄與另一個表中客戶之相應記錄相關聯，且關聯或個別資料可調用以呈現於螢幕上、打印出或依據本發明之方法及系統發生其他活動。 User, operational data relationships (including operational history), operations, and related data types are stored in one or more sets of data records that can be configured into a relational database (or also metadata type, layered, networked, or Other types of databases), where data records are organized in tables. The records may be selectively correlated with each other according to a predetermined and selectable relationship, such as, for example, a data record in one table is associated with a corresponding record of a customer in another table, and the associated or individual data may be tuned for presentation on a screen. Other activities occur, printed out or in accordance with the methods and systems of the present invention.

系統可進行充分組態，且全套應用程式模板均允許個別授權 之已認證使用者對每一區域操作進行個別組態，如參考圖7所詳細描述，以及接收且儲存資料報導，提供警示及其類似舉動。熟習此項技術者將能夠輕易地使本發明之多區域爐操作系統適用於既定產物紅外線處理爐之特定需要。 The system is fully configurable and the full application template allows individual authorized authorized users to individually configure each zone operation, as described in detail with reference to Figure 7 , and to receive and store data reports, providing alerts and their Similar move. Those skilled in the art will be able to readily adapt the multi-zone furnace operating system of the present invention to the particular needs of a given product infrared processing furnace.

如圖7爐操作製程200之流程圖中所示，諸如以上表I中所示之例示性燒製操作始於典型地經由控制電腦顯示器上顯示之填寫模板對區域及一或多個既定區域內之線(諸如本文圖3及6之線A及B)進行組態202以設定帶速，因為整個爐10中帶之長度與寬度連續(圖1)，所以該帶速在所有區域及線中恆定。接著對所有區域14-22及具有多條線之區域中之個別線(此處為圖3及6之線A及B)的熱特徵進行組態，針對在爐中待燒製之特定高級材料分別預選定熱特徵。藉由使熱電偶傳輸通過爐以產生螢幕上特徵曲線顯示、根據實際運作特徵(在無產物之情況下)檢查預選定之預設特徵。 As shown in the flowchart 200 of FIG. 7 in the process furnace operation, such as shown above in Table I Exemplary of the firing operation starts typically exhibit one or more of the area and within the predetermined area to fill in the template via a display on the control computer The line (such as lines A and B of Figures 3 and 6 herein) is configured 202 to set the belt speed because the length and width of the belt in the entire furnace 10 are continuous ( Figure 1 ), so the belt speed is in all areas and lines. Constant. The thermal characteristics of all regions 14-22 and individual lines in the region with multiple lines (here, lines A and B of Figures 3 and 6 ) are then configured for the particular advanced material to be fired in the furnace. The thermal features are pre-selected separately. The pre-selected preset features are inspected by passing the thermocouple through the oven to produce a graphical display of the on-screen characteristic, based on actual operational characteristics (without product).

對於區域組態204而言，操作又使貫穿每一區域之步驟程式化，由燒盡區域206起始，其中設定引風排氣機之速率或體積(cfm)、高及低過溫警報設定及燈之高及低溫度設定值。對峰值燒製區域16之每一條線(上文圖3及6之實施例中之線A及B)進行組態208，視情況設定壓縮空氣輸入量以將燈冷卻(在使用之情況下)，及選擇燈電壓設定值(個別地或作為區域上及下區段中一或多組燈38U及/或38L陣列)以符合峰值區域16每一條線燒製晶圓所要之溫升曲線。接著，藉由設定空氣刀之壓縮空氣供給及排出(自然通風機或引風機)對淬滅區域進行組態210。藉由個別或成組設定燈電壓及氣流(其可在零至中止淬滅所需量之範圍內)對中止淬滅區域進行組態212。最終，藉由設定排氣引風機及換熱管水流對退火區域進行組態214。視情況，可設定可變空氣進入埠(側壁及/或底壁)。 For the zone configuration 204, the operation further programs the steps through each zone, starting from the burnout zone 206, where the rate or volume (cfm), high and low overtemperature alarm settings of the drafter are set. And the high and low temperature settings of the lamp. Configure 208 for each of the peak firing zones 16 (lines A and B in the embodiments of Figures 3 and 6 above), optionally setting the compressed air input to cool the lamp (in the case of use) And selecting a lamp voltage set point (either individually or as an array of one or more sets of lamps 38U and/or 38L in the upper and lower sections of the zone) to match the desired temperature rise curve for each line of the peak region 16 firing the wafer. Next, the quenching zone is configured 210 by setting the compressed air supply and discharge (natural ventilator or induced draft fan) of the air knife. The quenching zone is configured 212 by individually or in groups to set the lamp voltage and gas flow (which can range from zero to the amount required to quench the quenching). Finally, the annealing zone is configured 214 by setting the flow of the exhaust draft fan and the heat exchange tubes. Variable air inlets (side walls and/or bottom walls) can be set as appropriate.

當進行組態完成時，爐操作方法216示於圖7之邏輯部分(亦 應參考圖1)。在燒盡區域14中，區域中之熱電偶輸出表示感測溫度水準之信號。將此等信號與設定值進行比較218，且若該等值在設定參數內，則保持該燈功率220。然而，若該等值不屬於設定參數範圍內，則PID型控制器會調節燈功率222直至熱電偶報導固有值。 When the configuration is completed, furnace operation method 216 is shown in the logic portion of Figure 7 (see also Figure 1 ). In the burnout region 14, the thermocouple output in the region represents a signal that senses the temperature level. The signals are compared 218 to the set values, and if the values are within the set parameters, the lamp power 220 is maintained. However, if the value does not fall within the set parameter range, the PID type controller will adjust the lamp power 222 until the thermocouple reports the intrinsic value.

對於峰值區域16中之每一條個別線而言，每一條線中之每一燈或燈組之交流電壓感測器信號(或視情況存在之熱電偶信號，視情況而定)與設定參數進行比較224，且若在選定範圍內，則保持該電壓特徵226。若未保持線之電壓特徵，則PID控制器視需要調節燈之電壓228以使其回到彼線之特徵內。對於熱電偶控制，燈輸出之交流電壓控制較佳。 For each individual line in peak region 16, the AC voltage sensor signal (or thermocouple signal, as the case may be, as appropriate) for each lamp or group of each line is set with the set parameters Comparison 224, and if within the selected range, maintains the voltage characteristic 226. If the voltage characteristics of the line are not maintained, the PID controller adjusts the voltage 228 of the lamp as needed to return it to the characteristics of the line. For thermocouple control, the AC voltage control of the lamp output is preferred.

在淬滅區域18中，經由特徵分析230監測溫度。若在特徵內，則保持空氣刀之氣流232，但若不在特徵內，則調節空氣刀之廢氣或壓縮空氣值234以使溫度進入預先選定之特徵內。 In the quenching zone 18, the temperature is monitored via feature analysis 230. If within the feature, the air knife airflow 232 is maintained, but if not within the feature, the air knife exhaust or compressed air value 234 is adjusted to bring the temperature into the preselected features.

在中止淬滅區域20中，監測溫度236，且若在特徵內，則保持下游退火區域中之燈電壓及引風機之設定238，但若不在特徵內，則調節燈電壓240以使溫度回到特徵內。 In the quenching quenching zone 20, the temperature 236 is monitored, and if within the feature, the lamp voltage in the downstream annealing zone and the setting of the induced draft fan 238 are maintained, but if not within the feature, the lamp voltage 240 is adjusted to bring the temperature back Within the feature.

在退火區域22中，監測沿區域之一或多個位置之溫度，且若在特徵內242，則保持抽風機之設定244，但若不在特徵內，則調節抽風機之氣流246以使溫度回到特徵內。典型地，在此區域中不提供燈或其他熱源(除來自淬滅及/或中止淬滅區域之排出氣體外)。 In the anneal zone 22, the temperature of one or more locations along the zone is monitored, and if within the feature 242, the blower setting 244 is maintained, but if not within the feature, the blower airflow 246 is adjusted to bring the temperature back Within the feature. Typically, no lamps or other heat sources are provided in this area (except for the exhaust gases from quenching and/or quenching the quenching zone).

具有採用高反射元件之多線峰值燒製模組之本發明紅外線爐系統對處理諸如太陽能晶圓之高級基板材料之廣泛適用性在於該等模組提供實質處理優點，亦即由於能夠在不損害燈壽命之情況下以基本上100%額定容量操作燈達大約2倍或2倍以上加熱速率故而輸送量較快。另外，控制個別線以達到不同熱處理特徵之能力使處理可撓性程度在行業中無與倫比。 The wide applicability of the infrared oven system of the present invention having a multi-line peak firing module employing highly reflective elements to the processing of advanced substrate materials such as solar wafers provides that the modules provide substantial processing advantages, i.e., because they are capable of In the case of lamp life, the lamp is operated at a substantially 100% rated capacity for a heating rate of about 2 times or more, so that the conveying amount is faster. In addition, the ability to control individual lines to achieve different heat treatment characteristics makes processing flexibility unmatched in the industry.

一般熟習此項技術者可在不背離本發明精神之情況下在本發明之範疇內進行多次修改。舉例而言，可使用多種市售加熱元件。可採用視需要在爐全長或侷限於選定區域具有多個線分隔器之較寬帶爐。對於較寬帶而言，垂直線分隔器可由每一區域模組之底部向上延伸以在橫跨該帶寬度之一或多個點支撐該帶，從而防止下陷。PLC控制器可用以提供製程參數控制之可選擇選單，其包括(但不限於)帶速、選定基板之功率勻變、峰值溫度、尖峰區域中之停留時間、冷卻速率、冷卻空氣流速、熱交換速率及其類似參數，且基於逐線來提供。 Many modifications may be made within the scope of the invention without departing from the spirit of the invention. For example, a variety of commercially available heating elements can be used. A wider range of furnaces having a plurality of line dividers over the entire length of the furnace or limited to selected areas may be employed as desired. For wider bandwidths, a vertical line divider can be extended upwardly from the bottom of each zone module to support the zone at one or more points across the width of the zone to prevent sagging. The PLC controller can be used to provide a selectable menu of process parameter control including, but not limited to, belt speed, power ramping of selected substrates, peak temperature, dwell time in the peak region, cooling rate, cooling air flow rate, heat exchange Rate and its similar parameters, and are provided on a line-by-line basis.

12‧‧‧進行燒製之晶圓 12‧‧‧Finished wafers

13‧‧‧輸送機帶 13‧‧‧Conveyor belt

16‧‧‧尖峰區域模組 16‧‧‧ spike regional module

32a、32b‧‧‧側壁 32a, 32b‧‧‧ side wall

36‧‧‧高反射氧化鋁陶瓷板 36‧‧‧Highly reflective alumina ceramic plate

38‧‧‧摺疊高強度紅外線燈 38‧‧‧Folding high-intensity infrared lamps

42‧‧‧末端配件 42‧‧‧End fittings

47‧‧‧循環管道熱氣出口 47‧‧‧Circular duct hot gas outlet

48‧‧‧燈之電連接器 48‧‧‧Electric connector for lamp

50‧‧‧金屬外殼 50‧‧‧Metal casing

52‧‧‧耐火絕緣材料 52‧‧‧ Refractory insulation

53‧‧‧擋流板 53‧‧‧Baffle

58‧‧‧區域端壁中之輸送機帶間隙 58‧‧‧Conveyor belt gap in the end wall of the area

62‧‧‧入口冷卻空氣歧管 62‧‧‧Inlet cooling air manifold

88‧‧‧燒盡區域中紅外線燈之埠 88‧‧‧After burning the infrared light in the area

106‧‧‧縱向分隔器 106‧‧‧Vertical divider

108‧‧‧分隔壁中或外壁32a、32b上之凸緣 108‧‧‧Flange in the middle or outer wall 32a, 32b

110‧‧‧分隔壁之帽；支撐反射器36 110‧‧‧Folding wall cap; support reflector 36

112‧‧‧熱電偶 112‧‧‧ thermocouple

112a‧‧‧用於線A之熱電偶 112a‧‧‧ Thermocouple for line A

112B‧‧‧用於線B之熱電偶 112B‧‧‧ Thermocouple for line B

120‧‧‧爐區域頂板或底板 120‧‧‧Front area top or bottom plate

CL‧‧‧爐之中心線 CL‧‧‧ furnace center line

LA‧‧‧線A LA‧‧‧Line A

LB‧‧‧線B LB‧‧‧Line B

Claims (20)

一種熱處理爐模組，其具有單一連續輸送機帶用以以並排關係線路、以一縱向製程路徑方向傳輸多個太陽能電池晶圓通過該爐之多個處理區域，該模組包含以下之操作性組合：a. 一沿一水平之大體中心線分隔而形成一上部及一下部之紅外線燈加熱模組，該模組經組態以涵蓋該輸送機帶之全部側寬，其中間隙供該輸送機帶自其穿過，該等模組部分包括協同突出以提供間隙之端壁，承載太陽能電池晶圓之該輸送機帶可以該縱向路徑方向穿過該間隙，分別自該爐之上游區域穿入且進入下游區域；b. 該模組包括至少一個經安置以在該模組內產生個別線之縱向分隔壁，該等線中之每一者與該輸送機帶上之該等晶圓之一線路相對應，該分隔壁達不到該輸送機帶之水平路徑即終止以允許其傳輸間隙，c. 安置於該模組之該上部及該下部中之至少一者之至少一條線中的至少一個高反射氧化鋁陶瓷元件，該高反射元件有一面指向該輸送機帶上傳輸之一晶圓的一表面；d. 至少一個與該高反射元件表面隔開且處於該表面與該晶圓中間之高強度摺疊管狀紅外線燈，該燈具有一取向垂直於藉由該輸送機帶實現之晶圓傳輸之縱向的管長度、一摺疊內部末端及具有連接電源之導線的並排外部末端；及e. 夾持該摺疊管狀燈呈與該高反射元件隔開之關係的構件，以將高強度紅外線輻射自該等燈有效導引至傳輸通過該製程區域之晶圓之至少一個表面上。 A heat treatment furnace module having a single continuous conveyor belt for transporting a plurality of solar cell wafers through a plurality of processing regions of the furnace in a longitudinal process path in a side-by-side relationship, the module comprising the following operability Combination: a. An upper and lower infrared lamp heating module is formed along a horizontal centerline of a horizontal level, the module is configured to cover all side widths of the conveyor belt, wherein the gap is for the conveyor With the strap passing therethrough, the module portions include end walls that cooperate to protrude to provide a gap, and the conveyor belt carrying the solar cell wafer can pass through the gap in the longitudinal path direction, respectively penetrating from the upstream region of the furnace And entering the downstream region; b. the module includes at least one longitudinal dividing wall disposed to create individual lines within the module, each of the lines and one of the wafers carried by the conveyor Corresponding to the line, the partition wall does not reach the horizontal path of the conveyor belt, that is, terminates to allow the transmission gap, c. is disposed in at least one of the upper portion and the lower portion of the module. At least one highly reflective alumina ceramic component having a surface directed toward a surface of a wafer on which the conveyor belt is transported; d. at least one surface spaced from the surface of the highly reflective component and on the surface a high-strength folded tubular infrared lamp having a longitudinally oriented tube length oriented perpendicular to the wafer transfer by the conveyor belt, a folded inner end, and side-by-side outer ends having wires connected to the power source; and e. The folded tubular lamp is clamped in a spaced relationship from the highly reflective member to effectively direct high intensity infrared radiation from the lamps to at least one surface of the wafer transported through the process region. 如申請專利範圍第1項之熱處理爐模組，其中該輸送機帶經組態以在呈隔開之左右並排關係的線路中傳輸晶圓對，且該模組包括取向實質上與該模組之縱向垂直中心線一致之一分隔器以提供兩條線，即與該左晶圓 線路及右晶圓線路相對應之一左線及一右線。 The heat treatment furnace module of claim 1, wherein the conveyor belt is configured to transport a wafer pair in a line spaced apart in a side-by-side relationship, and the module includes an orientation substantially related to the module The vertical vertical centerline is aligned with one of the dividers to provide two wires, ie, the left wafer The line and the right wafer line correspond to one of the left line and the right line. 如申請專利範圍第2項之熱處理爐模組，其中至少一個摺疊管狀紅外線燈安置於該模組之至少一部分中以照射傳輸通過該模組之晶圓之每一條線。 For example, in the heat treatment furnace module of claim 2, at least one folded tubular infrared lamp is disposed in at least a portion of the module to illuminate each line of the wafer transmitted through the module. 如申請專利範圍第3項之熱處理爐模組，其中該等夾持構件在接近該管狀燈內部摺疊末端處對其進行支撐。 The heat treatment furnace module of claim 3, wherein the clamping members support the inner end of the tubular lamp near the folded end thereof. 如申請專利範圍第4項之熱處理爐模組，其中該摺疊燈之該等外部末端向該模組外伸出以自該爐之僅一側連接至其電源。 The heat treatment furnace module of claim 4, wherein the outer ends of the folding lamp protrude outside the module to be connected to the power source from only one side of the furnace. 如申請專利範圍第1項之熱處理爐模組，其中該輸送機帶經組態以沿兩條以上並排線傳輸晶圓，且該模組經組態而具有分隔器以產生一條與該皮帶上之每一晶圓線路相對應之線。 The heat treatment furnace module of claim 1, wherein the conveyor belt is configured to transport wafers along more than two side by side lines, and the module is configured to have a divider to produce a strip and the belt Each of the wafer lines corresponds to a line. 如申請專利範圍第1項之熱處理爐模組，其中個別控制該模組之每一條線中每一燈之功率以對該輸送機帶上傳輸通過該模組之晶圓之每一該線路產生預選定之熱特徵。 For example, in the heat treatment furnace module of claim 1, wherein each of the lamps of each of the modules is individually controlled to generate a power for each of the wires of the conveyor that is transported through the module. Pre-selected thermal characteristics. 如申請專利範圍第7項之熱處理爐模組，其中該模組包括為一爐控制器提供一感測溫度信號之一熱電偶。 The heat treatment furnace module of claim 7, wherein the module comprises a thermocouple for sensing a temperature signal for a furnace controller. 如申請專利範圍第4項之熱處理爐模組，其中該夾持構件包括一安置於該分隔器之一側壁上之凸緣，且該分隔器頂部有一比該分隔器之厚度寬之石英條。 A heat treatment furnace module according to claim 4, wherein the clamping member comprises a flange disposed on a side wall of the separator, and the top of the separator has a quartz strip wider than the thickness of the separator. 一種紅外線燈加熱型熱處理爐，其具有單一連續輸送機帶用以以並排關係線路、以一縱向製程路徑方向傳輸多個太陽能電池晶圓通過該爐之多個處理區域，該熱處理爐包含以下之操作性組合：a. 該爐之至少一個區域包含一沿一水平之大體中心線分隔而形成一上部及一下部之紅外線燈加熱模組，該模組經組態以涵蓋該輸送機帶之全部側寬，其中間隙供該輸送機帶自其穿過，該等模組部分包括協同突出以提 供間隙之端壁，承載太陽能電池晶圓之該輸送機帶可以該縱向路徑方向穿過該間隙，分別自該爐之上游區域穿入且進入下游區域；b. 該模組包括至少一個經安置以在該模組內產生個別線之縱向分隔壁，該等線中之每一者與該輸送機帶上之該等晶圓之一線路相對應，該分隔壁達不到該輸送機帶之水平路徑即終止以允許其傳輸間隙，c. 安置於該模組之該上部及該下部中之至少一者之至少一條線中的至少一個高反射氧化鋁陶瓷元件，該高反射元件有一面指向該輸送機帶上傳輸之一晶圓的一表面；d. 至少一個與該高反射元件表面隔開且處於該表面與該晶圓中間之高強度摺疊管狀紅外線燈，該燈具有一取向垂直於藉由該輸送機帶實現之晶圓傳輸之縱向的管長度、一摺疊內部末端及具有連接電源之導線的並排外部末端；及e. 夾持該摺疊管狀燈呈與該高反射元件隔開之關係的構件，以將高強度紅外線輻射自該等燈有效導引至傳輸通過該製程區域之晶圓之至少一個表面上。 An infrared lamp heating type heat treatment furnace having a single continuous conveyor belt for transporting a plurality of solar cell wafers through a plurality of processing regions of the furnace in a longitudinal process path in a side-by-side relationship, the heat treatment furnace comprising the following Operational combination: a. At least one region of the furnace comprises an infrared lamp heating module that is separated along a horizontal centerline to form an upper and a lower portion, the module being configured to cover all of the conveyor belt Side width, wherein the gap is for the conveyor belt to pass through, and the module portions include synergistic protrusions to An end wall for the gap, the conveyor belt carrying the solar cell wafer may pass through the gap in the longitudinal path direction, respectively penetrating from the upstream region of the furnace and entering the downstream region; b. the module includes at least one disposed Forming a longitudinal dividing wall of individual lines within the module, each of the lines corresponding to one of the lines of the wafer on the conveyor belt, the dividing wall not meeting the conveyor belt The horizontal path terminates to allow it to transmit a gap, c. at least one highly reflective alumina ceramic component disposed in at least one of at least one of the upper portion and the lower portion of the module, the high reflective element having one side pointing The conveyor belt carries a surface of one of the wafers; d. at least one high-strength folded tubular infrared lamp spaced from the surface of the highly reflective element and intermediate the surface and the wafer, the lamp having an orientation perpendicular to the borrowing a longitudinal tube length of the wafer transfer by the conveyor belt, a folded inner end, and side-by-side outer ends having wires connected to the power source; and e. clamping the folded tubular lamp with the high reflective element The relationship between the open member, to such a high intensity infrared radiation lamps from the active pilot to the transmission path through a wafer made of at least one area of the upper surface. 如申請專利範圍第10項之紅外線燈加熱型處理爐，其中提供該多線模組用於一尖峰燒製區域。 An infrared lamp heating type processing furnace according to claim 10, wherein the multi-line module is provided for a spike firing zone. 如申請專利範圍第11項之紅外線燈加熱型熱處理爐，其包括該尖峰燒製區域之上游、一燒盡區域及一乾燥區域中之至少一者。 The infrared lamp heating type heat treatment furnace of claim 11, comprising at least one of an upstream of the peak firing zone, a burnout zone, and a dry zone. 如申請專利範圍第11項之紅外線燈加熱型熱處理爐，其在該尖峰燒製區域之下游包括一回火區域。 An infrared lamp heating type heat treatment furnace according to claim 11 which includes a tempering zone downstream of the peak firing zone. 如申請專利範圍第11項之紅外線燈加熱型熱處理爐，其中該爐在該尖峰燒製區域與該回火區域之中間包括一淬滅區域及一中止淬滅區域中之至少一者。 An infrared lamp heating type heat treatment furnace according to claim 11, wherein the furnace includes at least one of a quenching region and a quenching quenching region between the peak firing region and the tempering region. 如申請專利範圍第14項之紅外線燈加熱型熱處理爐，其中該淬滅區 域包括當該輸送機帶上之產物離開該尖峰燒製區域時使其溫度迅速降低之至少一個空氣刀總成，且其中該中止淬滅區域包括至少一個紅外線燈以中止該產物之冷卻，為該回火區域中之回火做準備。 Such as the infrared lamp heating type heat treatment furnace of claim 14 of the patent scope, wherein the quenching zone The field includes at least one air knife assembly that rapidly lowers temperature of the product on the conveyor belt as it exits the spike firing zone, and wherein the discontinuous quenching zone includes at least one infrared lamp to stop cooling of the product, Prepare for tempering in the tempering zone. 如申請專利範圍第10項之紅外線燈加熱型熱處理爐，其包括一控制器用於控制該尖峰燒製區域模組之每一條線中該輸送機帶之行進速率及該等紅外線燈中之每一者的功率，以在整個該爐區域提供可選擇熱加熱特徵。 An infrared lamp heating type heat treatment furnace according to claim 10, comprising a controller for controlling a traveling speed of the conveyor belt in each line of the spike firing zone module and each of the infrared lamps The power of the person to provide optional thermal heating characteristics throughout the furnace area. 一種在紅外線燈加熱爐中熱處理太陽能電池晶圓之方法，該等紅外線燈加熱爐具有單一連續輸送機帶用以以並排關係線路、以一縱向製程路徑方向傳輸多個太陽能電池晶圓通過該爐之多個處理區域，該方法包含以下步驟：a. 向該爐之至少一個區域提供具有一沿一水平之大體中心線分隔而形成一上部及一下部之紅外線燈加熱模組，該模組經組態以涵蓋該輸送機帶之全部側寬，其中間隙供該輸送機帶自其穿過，該等模組部分包括協同突出以提供間隙之端壁，承載太陽能電池晶圓之該輸送機帶可以該縱向路徑方向穿過該間隙，分別自該爐之上游區域穿入且進入下游區域；b. 在該模組中提供至少一個在該模組內產生個別線之縱向分隔壁，該等線中之每一者與該輸送機帶上之該等晶圓之一線路相對應，該分隔壁達不到該輸送機帶之水平路徑即終止以允許其傳輸間隙；c. 在該模組之該上部及該下部中之至少一者之至少一條線中提供至少一個高反射氧化鋁陶瓷元件，該高反射元件有一面指向該輸送機帶上傳輸之一晶圓的一表面；d. 提供至少一個與該高反射元件表面隔開且處於該表面與該晶圓中間之高強度摺疊管狀紅外線燈，該燈具有一取向垂直於藉由該輸送機帶實現之晶圓傳輸之縱向的管長度，且該燈具有一摺疊內部末端及具有連接電源之導線的並排外部末端； e. 夾持該摺疊管狀燈呈與該高反射元件隔開之關係，以將高強度紅外線輻射自該等燈有效導引至傳輸通過該製程區域之晶圓之至少一個表面上；及f. 控制該模組之每一條線中該輸送機帶的行進速率及該等紅外線燈中之每一者的功率以在整個該爐之該等區域中產生可選擇熱加熱特徵。 A method for heat-treating a solar cell wafer in an infrared lamp heating furnace, the infrared lamp heating furnace having a single continuous conveyor belt for transporting a plurality of solar cell wafers in a longitudinal process path in a side-by-side relationship The plurality of processing regions, the method comprising the steps of: a. providing an infrared lamp heating module having an upper portion and a lower portion separated by at least one horizontal center line along at least one region of the furnace, the module being Configuring to cover the full side width of the conveyor belt, wherein the gap is for the conveyor belt to pass therethrough, the module portions including end walls that cooperate to provide clearance, the conveyor belt carrying the solar cell wafer The longitudinal path may pass through the gap, respectively penetrating from the upstream region of the furnace and into the downstream region; b. providing at least one longitudinal dividing wall in the module that produces individual lines in the module, the lines Each of which corresponds to one of the lines of the wafer on the conveyor belt, the partition wall not reaching the horizontal path of the conveyor belt, ie terminating to allow its transmission a gap; c. providing at least one highly reflective alumina ceramic component in at least one of the upper portion and the lower portion of the module, the high reflective component having one side directed toward the conveyor belt a surface of a circle; d. providing at least one high-strength folded tubular infrared lamp spaced from the surface of the highly reflective element and intermediate the surface and the wafer, the lamp having an orientation perpendicular to the crystal realized by the conveyor belt a longitudinally long tube length of the circular transmission, and the luminaire has a folded inner end and side-by-side outer ends having wires connected to the power source; e. clamping the folded tubular lamp in spaced relation to the high reflective element to effectively direct high intensity infrared radiation from the lamps to at least one surface of the wafer transported through the process region; and f. The rate of travel of the conveyor belt and the power of each of the infrared lamps in each of the lines of the module is controlled to produce selectable thermal heating features throughout the area of the furnace. 如申請專利範圍第17項在紅外線燈加熱爐中熱處理太陽能電池晶圓之方法，其包括以下步驟：提供經組態以在間隔之左右並排關係之線路中傳輸晶圓對之該輸送機帶，及提供經組態而具有取向與該模組之縱向垂直中心線實質上一致之單一分隔器之該模組以具有兩條線，即與該左晶圓線路及右晶圓線路相對應之一左線及一右線。 A method of heat treating a solar cell wafer in an infrared lamp heating furnace, as in claim 17, comprising the steps of: providing the conveyor belt configured to transport the wafer pair in a side-by-side relationship between the intervals, And providing the module configured to have a single divider oriented substantially identical to a longitudinal vertical centerline of the module to have two lines, one corresponding to the left and right wafer lines Left line and one right line. 如申請專利範圍第18項在紅外線燈加熱爐中熱處理太陽能電池晶圓之方法，其包括在該模組之至少一個部分中提供至少一個摺疊管狀紅外線燈以照射傳輸通過該模組之晶圓之每一條線之步驟。 A method of heat treating a solar cell wafer in an infrared lamp heating furnace according to claim 18, comprising providing at least one folded tubular infrared lamp in at least one portion of the module to illuminate a wafer transmitted through the module The steps of each line. 如申請專利範圍第19項在紅外線燈加熱爐中熱處理太陽能電池晶圓之方法，其包括將來自該模組之一感測溫度信號作為輸入提供給該控制步驟之步驟。 A method of heat treating a solar cell wafer in an infrared lamp heating furnace according to claim 19, comprising the step of providing a sensing temperature signal from the module as an input to the controlling step.