TWI540944B - 基板結構的製造方法、基板結構以及金屬構件 - Google Patents
基板結構的製造方法、基板結構以及金屬構件 Download PDFInfo
- Publication number
- TWI540944B TWI540944B TW103124155A TW103124155A TWI540944B TW I540944 B TWI540944 B TW I540944B TW 103124155 A TW103124155 A TW 103124155A TW 103124155 A TW103124155 A TW 103124155A TW I540944 B TWI540944 B TW I540944B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- metal
- protective layer
- metal substrate
- substrate structure
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C22/02—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using non-aqueous solutions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/386—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
- H05K3/387—Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
Description
本發明是有關於一種基板結構的製造方法、基板結構以及金屬構件,且特別是有關於一種具有保護層的基板結構的製造方法、基板結構以及金屬構件。
對電路板以及天線應用(antenna application)而言,特定金屬化學鍍常用以於塑膠基板上形成金屬圖案。不過,塑膠基板本身常伴隨著設置有其他的金屬構件(metal component),例如是金屬螺帽(metal nut)或是金屬嵌件(metal insert)等等。這些金屬構件具有活性金屬表面(active metal surface),因此在製作金屬圖案的化學鍍過程中,常會有金屬構件上附著額外金屬層的情形發生,造成化學鍍成本的增加以及短路的風險。舉例來說,當金屬螺帽的螺旋面上有額外金屬層,在將其他構件組裝至金屬螺帽上時,化學鍍上去的金屬層會受到擠壓而掉落,進而當成短路。而且,當非預定的區域上也形成金屬圖案時,將造成化鍍液的用
量增加,而且還會有外觀不良的問題產生。
目前已有一些方法被用來嘗試解決上述問題,例如,藉由電極施加正電荷至金屬構件上以排斥金屬離子,進而預防不必要的化學鍍發生。然而,隨著額外電荷的施加,化學鍍浴(plating bath)將變得不穩定而且也增加了鍍出(plating out)的風險。此外,上述防鍍方法也需使用昂貴的治具才能進行。因此,方便又經濟的防鍍方法,成為本領域技術人員亟欲發展的目標。
本發明提供一種金屬構件、基板結構以及基板結構的製造方法,其中透過將保護層形成於金屬基底的表面上,以達到防鍍的功能。
本發明的一種基板結構的製造方法,包括以下步驟。對一金屬基底進行一化學表面處理以於金屬基底的表面上形成一保護層。將金屬基底組裝至一基板上。於基板上形成一金屬圖案,金屬圖案與金屬基底彼此分離。
在本發明的一實施例中,上述的對金屬基底進行化學表面處理的方法包括:將金屬基底浸泡至一硫醇化合物(thiol compound)溶液中。
在本發明的一實施例中,上述的於基板上形成金屬圖案的方法包括化學鍍(electroless plating)。
本發明的一種基板結構包括一基板、一金屬圖案、一金
屬基底以及一保護層。金屬圖案設置於基板上。金屬基底設置於基板上。保護層覆蓋金屬基底的表面,且保護層化學鍵結至金屬基底的表面。
在本發明的一實施例中,上述的保護層完全覆蓋金屬基底的表面。
在本發明的一實施例中,上述的金屬基底部分內埋於基板中,且保護層位於金屬基底與基板之間。
在本發明的一實施例中,上述的金屬基底包括一金屬螺帽(metal nut)或一金屬片材(metal sheet)。
在本發明的一實施例中,上述的金屬圖案的材料包括銅、鎳、金或上述之任意組合。
在本發明的一實施例中,上述的保護層以烷硫基、芳硫基或芳烷硫基鍵結至該金屬基底的表面。
本發明的一種金屬構件包括一金屬基底以及一保護層。保護層至少包覆金屬基底的一部分表面,且保護層化學鍵結至金屬基底。
在本發明的一實施例中,上述的保護層完全覆蓋金屬基底的表面。
在本發明的一實施例中,上述的保護層以烷硫基、芳硫基或芳烷硫基鍵結至金屬基底的表面。
基於上述,本發明基板結構的製作方法可透過浸泡的方法於金屬基底上形成保護層,因此製作方法簡單。透過保護層覆
蓋金屬基底的表面,化學鍍時金屬基底表面上不會形成額外金屬層,因此可以減少化學鍍液的浪費,及因額外的金屬層所造成的外觀不良問題。
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
S10~S30‧‧‧步驟
10‧‧‧基板結構
100、100a‧‧‧金屬構件
110、110a‧‧‧金屬基底
120‧‧‧硫醇化合物溶液
130‧‧‧保護層
200‧‧‧基板
300‧‧‧金屬圖案
310‧‧‧銅層
320‧‧‧鎳層
330‧‧‧金層
A-A’‧‧‧剖線
圖1為本發明一實施例的基板結構的製作步驟流程圖。
圖2至圖6為圖1的基板結構的製作流程示意圖。
圖1為本發明一實施例的基板結構的製作步驟流程圖。圖2至圖6為圖1的基板結構的製作流程示意圖。圖4為圖3的剖面示意圖。圖6為圖5的剖面示意圖。首先,請參照圖1以及圖2,進行步驟S10,對一金屬基底110進行一化學表面處理。上述化學表面處理例如是將金屬基底110浸泡在一硫醇化合物溶液120中,以於金屬基底110的表面上形成一保護層130。
金屬基底110可以是用於設置在基板(例如是機殼、電路板等等)上的金屬嵌件(metal insert),其可以是鎖固裝置或是其他具有特定功能的裝置。舉例來說,金屬基底110可以是金屬螺帽(metal nut)或金屬片材(metal sheet)等等。圖2中繪示金
屬螺帽為例說明,其具有螺紋,適於讓螺釘固鎖於此。但本發明不以此為此。金屬基底110的材料例如是黃銅(brass)或鎳(nickel)。
硫醇化合物溶液120例如是將硫醇化合物溶於溶劑之中所形成,但本發明不排除硫醇化合物溶液120可以更包括其他成分。本實施例的硫醇化合物具有疏水性骨幹(backbone),其例如是選自由辛葵硫醇、十八烷硫醇(Octadecanethiol)、壬烷硫醇(Nonanethiol)、1-十六烷硫醇(1-Hexadecanethiol)、1-丁烷硫醇(1-Butanethiol)、三級壬基硫醇(tert-Nonyl mercaptan)、苄基硫醇(Benzyl mercaptan)以及硫酚(Thiophenol)所組成的群組。溶劑例如是酒精或是其他可溶解上述硫醇化合物的適當溶劑。
舉例而言,可將金屬基底110浸泡在硫醇化合物溶液120(例如是辛葵硫醇溶液)中約10分鐘,溶液溫度約為40℃。接著,將金屬基底110取出以水潤洗後,於70℃下乾燥20分鐘後,保護層130將覆蓋金屬基底110的表面,藉此形成一金屬構件100。金屬構件100包括金屬基底110以及位在金屬基底110表面上的保護層130。保護層130可以完全覆蓋金屬基底110的表面,或是僅覆蓋金屬基底110的一部分表面。本實施例是透過浸泡的方法於金屬基底110上形成保護層130,因此不需使用額外的治具也不需使用樹脂塗佈於金屬基板110的表面上。
當金屬基底110浸泡在硫醇化合物溶液120中的硫醇基將與金屬基底110的表面的金屬原子產生反應,而以烷硫基、芳硫基或是芳烷硫基的形式鍵結至金屬基底110的表面,其中硫原
子將與金屬原子產生化學鍵結。即,保護層130化學鍵結至金屬基底110的表面。如此一來,硫醇化合物可於金屬基底110的表面形成緻細的一保護層130,保護層130為電性絕緣且具有疏水性質。保護層130具有良好的耐化學性(chemical resistant)以及耐熱性(thermal resistant)。保護層130的厚度例如是0.1至5奈米(nm)。由於保護層130的厚度相當的薄,當金屬基底110為金屬螺帽時,皆著在螺紋上的保護層130也不易影響到螺紋的尺寸大小,因此後續將螺釘與螺帽組裝時,也不易發生螺釘與螺帽尺寸不合的現象。此外,保護層130是電性絕緣的,因此就算是保護層130在鎖固的過程中發生碎屑掉落的情形,也不會在電子裝置中發生短路的現象。
請參照圖1、圖3以及圖4,進行步驟S20,將金屬構件100(即已配置有保護層130的金屬基底110)組裝至一基板200上。基板200的材料例如是塑膠。可透過熱熔法(hot melting method)或是透過模內射出成型法(insert mold method)將金屬構件100部分內埋至基板200中。其中,透過模內射出成型法組裝時,可以進一步減少熱熔法所可能產生的基板200變形的可能性並增加金屬構件與基板的結合性。基板200暴露出金屬構件100的一部分表面。保護層130至少覆蓋基板200所暴露出的金屬基底110的表面。在本實施例中,保護層130例如是完全覆蓋金屬基底110的表面,因此保護層130可位於基板200與金屬基底110之間,使基板200不與金屬基底110接觸。但本發明不限於此。
在其他實施例中,保護層130也僅可以覆蓋基板200所暴露出的金屬基底110的表面,因此內埋在基板200中的金屬基底110例如是與基板200接觸的。換言之,在前一步驟中,金屬基底110可以僅針對被基板200暴露出的表面進行化學表面處理。如圖3與圖4所示,金屬構件100可以是覆蓋有保護層130的金屬螺帽,或者基板200上也可以配置有金屬構件100a,其例如是以金屬片材作為金屬基底110a,且金屬基底110a的表面上覆蓋有保護層130。
接著,請參照圖5以及圖6,進行步驟S30,於基板200上形成一金屬圖案300,金屬圖案300與金屬基底110彼此分離。金屬圖案300例如是天線、接點(pad)或其他由金屬層所構成的電子元件。金屬圖案300的材料包括銅、鎳、金、銀或上述之任意組合。形成金屬圖案300的方法包括化學鍍。在本實施例中,可透過化學鍍(electroless plating)於基板200上形成金屬圖案。本實施例的金屬圖案300例如是天線,其包括多層導電層。首先,可於基板200上形成銅層310,其具有良好的導電性。接著,於銅層310上形成鎳層320,其具有良好的抗刮性。接著,於鎳層320上形成金層330,其可以減少鎳層320的氧化。但本發明不限於此。金屬圖案300也可以是只包括單層導電層。
具體而言,可將基板200浸至化學鍍液中進行化學電鍍,以於基板200形成金屬圖案300。此時,由於保護層130覆蓋在金屬基板110的表面上,而金屬圖案300不會形成於保護層130上,
因此金屬圖案300不會鍍在金屬基底上110而達到防鍍的功能。換言之,金屬圖案300只會形成在預定形成的位置上,而不會形成在金屬基底110上。如此一來,不會浪費化學鍍液的用量,可以進一步節省成本,並避免因額外金屬層造成外觀上的影響。再者,本實施例是先將金屬構件100與基板200組裝後,再進行化學鍍金屬圖案300的製程。若是金屬構件100與基板200的組裝過程不順利時,失敗品上尚未電鍍上金屬,因此可以減少組裝失敗時所需負擔的製作成本。
至此,可大致完成基板結構10的製作。請再參照圖5以及圖6,基板結構10包括一基板200、一金屬圖案300、一金屬基底110以及一保護層130。金屬圖案300設置於基板200上。金屬基底110設置於基板200上。保護層130覆蓋金屬基底110的表面,且保護層130化學鍵結至金屬基底110的表面。
綜上所述,本發明基板結構的製作方法可透過浸泡的方法於金屬基底上形成保護層,不需使用額外的治具也不需額外塗佈樹脂,因此製作方法簡單。以化學鍍法形成金屬圖案時,透過保護層覆蓋金屬基底的表面,金屬基底表面上不會形成額外的金屬層,因此可以減少化鍍液的浪費,以節省成本,並避免因額外金屬層造成外觀上的影響。
10‧‧‧基板結構
100、100a‧‧‧金屬構件
110、110a‧‧‧金屬基底
130‧‧‧保護層
200‧‧‧基板
300‧‧‧金屬圖案
310‧‧‧銅層
320‧‧‧鎳層
330‧‧‧金層
A-A’‧‧‧剖線
Claims (9)
- 一種基板結構的製造方法,包括:對一金屬基底進行一化學表面處理以於該金屬基底的表面上形成一保護層,其中該保護層完全覆蓋該金屬基底的表面;將該金屬基底組裝至一基板上,其中該金屬基底部分內埋於該基板中,且該保護層位於該金屬基底與該基板之間;以及於該基板上形成一金屬圖案,該金屬圖案與該金屬基底彼此分離。
- 如申請專利範圍第1項所述的基板結構的製造方法,其中對該金屬基底進行該化學表面處理的方法包括:將該金屬基底浸泡至一硫醇化合物溶液中。
- 如申請專利範圍第1項所述的基板結構的製造方法,其中於該基板上形成該金屬圖案的方法包括化學鍍。
- 一種基板結構,包括:一基板;一金屬圖案,設置於該基板上;一金屬基底,設置於該基板上;以及一保護層,完全覆蓋該金屬基底的表面,且該保護層化學鍵結至該金屬基底的表面,其中該金屬基底部分內埋於該基板中,且該保護層位於該金屬基底與該基板之間。
- 如申請專利範圍第4項所述的基板結構,其中該金屬基底包括一金屬螺帽或一金屬片材。
- 如申請專利範圍第4項所述的基板結構,其中該金屬圖案的材料包括銅、鎳、金或上述之任意組合。
- 如申請專利範圍第4項所述的基板結構,其中該保護層以烷硫基、芳硫基或芳烷硫基鍵結至該金屬基底的表面。
- 一種金屬構件,包括:一金屬基底;以及一保護層,完全覆蓋該金屬基底的表面,且該保護層化學鍵結至該金屬基底。
- 如申請專利範圍第8項所述的金屬構件,其中該保護層以烷硫基、芳硫基或芳烷硫基鍵結至該金屬基底的表面。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103124155A TWI540944B (zh) | 2014-07-14 | 2014-07-14 | 基板結構的製造方法、基板結構以及金屬構件 |
US14/719,329 US9790609B2 (en) | 2014-07-14 | 2015-05-22 | Manufacturing method of substrate structure, substrate structure and metal component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103124155A TWI540944B (zh) | 2014-07-14 | 2014-07-14 | 基板結構的製造方法、基板結構以及金屬構件 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201603669A TW201603669A (zh) | 2016-01-16 |
TWI540944B true TWI540944B (zh) | 2016-07-01 |
Family
ID=55068650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103124155A TWI540944B (zh) | 2014-07-14 | 2014-07-14 | 基板結構的製造方法、基板結構以及金屬構件 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9790609B2 (zh) |
TW (1) | TWI540944B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI739245B (zh) * | 2019-03-12 | 2021-09-11 | 仁寶電腦工業股份有限公司 | 殼體結構及其製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4231976B2 (ja) * | 2000-03-30 | 2009-03-04 | 日本ゼオン株式会社 | 硬化性組成物及び多層回路基板 |
JP4154325B2 (ja) * | 2003-12-19 | 2008-09-24 | 株式会社日立産機システム | 電気回路モジュール |
KR100976320B1 (ko) * | 2005-07-08 | 2010-08-16 | 가부시키가이샤 크리에이티브 테크놀러지 | 정전척 및 정전척용 전극 시트 |
US8535616B2 (en) * | 2005-08-02 | 2013-09-17 | Moxtek, Inc. | Sub-wavelength metallic apertures as light enhancement devices |
CN103477728B (zh) | 2011-03-30 | 2016-05-18 | 富士胶片株式会社 | 印刷配线基板及其制造方法、印刷配线基板用的金属表面处理液以及集成电路封装基板 |
US8900990B2 (en) * | 2012-12-31 | 2014-12-02 | Stmicroelectronics, Inc. | System and method of combining damascenes and subtract metal etch for advanced back end of line interconnections |
-
2014
- 2014-07-14 TW TW103124155A patent/TWI540944B/zh active
-
2015
- 2015-05-22 US US14/719,329 patent/US9790609B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201603669A (zh) | 2016-01-16 |
US9790609B2 (en) | 2017-10-17 |
US20160014907A1 (en) | 2016-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2007180089A (ja) | 回路導体パターンを有する樹脂成形部品の製造方法 | |
US20150021070A1 (en) | Wiring board and method for manufacturing wiring board | |
TWI699143B (zh) | 印刷電路板及製造印刷電路板之方法 | |
KR101287761B1 (ko) | 인쇄회로기판 및 그의 제조방법 | |
KR102464950B1 (ko) | 회로기판 | |
TWI540944B (zh) | 基板結構的製造方法、基板結構以及金屬構件 | |
KR20160079413A (ko) | 인쇄회로기판 및 그 제조방법 | |
TWI606763B (zh) | 電路板及其製作方法 | |
JP5165723B2 (ja) | 回路基板およびその製造方法 | |
KR101742433B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
TW201315304A (zh) | 印刷電路板及其製造方法 | |
JP2011139010A5 (zh) | ||
CN106298692A (zh) | 芯片封装基板、芯片封装结构及其制作方法 | |
CN105307378B (zh) | 基板结构的制造方法、基板结构以及金属构件 | |
KR102457304B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
KR100712669B1 (ko) | 은 하지도금을 이용한 휘스커 방지용 표면처리방법 | |
KR102108433B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
KR102119807B1 (ko) | 인쇄회로기판 및 그의 제조 방법 | |
TWI395523B (zh) | 電路板結構及其製法 | |
KR20160120906A (ko) | 스퍼터링 방법 | |
JP6760683B2 (ja) | 電極構造体 | |
KR20040110734A (ko) | 필름 캐리어 테이프 및 그 제조방법 | |
JP2015090981A (ja) | プリント回路基板用ソルダレジスト、これを用いたプリント回路基板およびその製造方法 | |
TW201936030A (zh) | 卷對卷柔性線路板及其快速加工方法 | |
KR20130046723A (ko) | 인쇄회로기판의 제조방법 |