TWI531123B - Multi-frequency resonant antenna - Google Patents
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Description
本創作是關於一種天線，特別是指多頻共振天線。 This creation is about an antenna, especially a multi-frequency resonant antenna.
無線通訊技術與無線網路早以深入人類的生活中，使用者利用無線通訊裝置，諸如手機、平板電腦或筆記型電腦等可攜式行動裝置連線至雲端網路，即可執行上網功能。 Wireless communication technology and wireless networks have long penetrated into human life. Users can use the wireless communication device, such as mobile phones, tablets or notebooks, to connect to the cloud network to perform Internet access.
天線係無線通訊裝置必備的元件，一般若將天線設置在一基板之角落處，會具有最佳的收發效果。現有天線主要是製作成二維結構，亦即在一基板上設置複數個輻射段，藉由輻射段的幾何形狀、長度、寬度與連接等設計，可讓天線操作在一特定的頻帶。 Antennas are essential components of wireless communication devices. Generally, if the antenna is placed at the corner of a substrate, it will have the best transmission and reception effect. The existing antenna is mainly made into a two-dimensional structure, that is, a plurality of radiant sections are arranged on a substrate, and the antenna is operated in a specific frequency band by the design of the geometry, length, width and connection of the radiant section.
然而，二維結構的天線只能單頻操作，隨著科技的進展，現有單頻天線已不敷使用。雖然現有三維結構的天線可以達到多頻帶之操作，但三維結構天線的尺寸勢必大於二維結構天線的尺寸。基於天線安裝空間的考量，因此無線通訊裝置通常傾向使用二維結構的天線，導致無線通訊裝置的功能受到二維結構天線限制，造成應用上的困擾。 However, the two-dimensional structure of the antenna can only be operated at a single frequency. With the advancement of technology, the existing single-frequency antenna is no longer sufficient. Although the existing three-dimensional structure antenna can achieve multi-band operation, the size of the three-dimensional structure antenna is inevitably larger than that of the two-dimensional structure antenna. Based on the consideration of the antenna installation space, the wireless communication device generally tends to use the antenna of the two-dimensional structure, and the function of the wireless communication device is limited by the two-dimensional structure antenna, which causes application troubles.
本創作的主要目的是提供一種多頻共振天線，用於改善二維結構的天線僅能應用在單一頻帶導致功能受限的缺點。 The main purpose of this creation is to provide a multi-frequency resonant antenna for improving the disadvantage that the two-dimensional structure of the antenna can only be applied to a single frequency band resulting in limited functionality.
本創作多頻共振天線設於一介質基板表面的角落處，該多頻共振天線包含有：一介質基板；一系統接地層，形成在該介質基板表面，且在該介質基板的角落處具有一淨空區，該系統接地層具有一第一接地段與一第二接地段，該第一接地段係從第二接地段的側邊延伸；一信號饋入件，係設置在該介質基板上且位於該淨空區中，該信號饋入件具有一第一端與一第二端，該第一端電性連接該第一接地段；一天線本體，係設置在該介質基板上且位於該淨空區中，該天線本體包含有：一第一輻射段，具有一第一端與一第二端，該第一端電性連接該信號饋入件的第二端，第一輻射段的第二端係朝第一接地段的相反方向延伸；一第二輻射段，具有一第一端與一第二端，該第一端係與第一輻射段的第二端電性連接，該第二端係朝第二接地段的相反方向延伸；一第三輻射段，具有一第一端與一第二端，該第一端係與第二輻射段的第二端電性連接，該第二端係朝第一接地段方向延伸且與第一接地段保持一間隔；一第四輻射段，具有一第一端與一第二端，該第 一端係與第一輻射段的第二端電性連接，該第二端係朝第二接地段的方向延伸且與第二接地段保持一間隔；以及一第五輻射段，位在第一接地段與第一輻射段之間且具有一第一端與一第二端，該第一端係與第一接地段電性連接，該第二端係朝第一接地段的相反方向延伸；以及一電容晶片，係設置在該介質基板上且位於該淨空區中，該電容晶片具有一第一端與一第二端，該第一端係電性連接該第四輻射段與第五輻射段的第二端，該電容晶片的第二端電性連接該第二接地段。 The multi-frequency resonant antenna is disposed at a corner of a surface of a dielectric substrate, the multi-frequency resonant antenna comprises: a dielectric substrate; a system ground layer is formed on the surface of the dielectric substrate, and has a corner at a corner of the dielectric substrate a clearance layer, the system ground layer has a first ground segment and a second ground segment, the first ground segment extends from a side of the second ground segment; a signal feed member is disposed on the dielectric substrate The signal feeding member has a first end and a second end. The first end is electrically connected to the first grounding portion. An antenna body is disposed on the dielectric substrate and located in the clearing space. The antenna body includes: a first radiating section having a first end and a second end, the first end electrically connected to the second end of the signal feeding member, and the second end of the first radiating section The end portion extends in a direction opposite to the first grounding portion; a second radiating portion has a first end and a second end, the first end is electrically connected to the second end of the first radiating portion, the second The end extension extends in the opposite direction of the second ground segment; a third The first segment is electrically connected to the second end of the second radiating segment, and the second end extends toward the first ground segment and is connected to the first ground segment. Maintaining an interval; a fourth radiant section having a first end and a second end, the One end is electrically connected to the second end of the first radiating section, the second end extends toward the second grounding section and is spaced apart from the second grounding section; and a fifth radiating section is located at the first end Between the ground and the first radiating section, and having a first end and a second end, the first end is electrically connected to the first grounding section, and the second end extends in an opposite direction of the first grounding section; a capacitor chip disposed on the dielectric substrate and located in the clearance area, the capacitor wafer having a first end and a second end, the first end electrically connecting the fourth radiating section and the fifth radiating section The second end of the capacitor chip is electrically connected to the second ground segment.
根據本創作的結構，第一輻射段、第四輻射段、電容晶片與系統接地層構成一低頻路徑，當低頻信號從信號饋入件進入本創作時，低頻信號係沿著低頻路徑共振；此外，第一輻射段、第二輻射段與第三輻射段構成一高頻路徑，當高頻信號從信號饋入件進入本創作時，高頻信號係沿著高頻路徑共振，使本創作可同時應用在低頻頻帶與高頻頻帶，解決現有天線僅能操作再單一頻帶的缺點，且系統接地層、信號饋入件、天線本體與電容晶片係位在同一平面上而能實現平面化的要求。 According to the structure of the present invention, the first radiating section, the fourth radiating section, the capacitor chip and the system ground layer form a low frequency path, and when the low frequency signal enters the creation from the signal feeding member, the low frequency signal resonates along the low frequency path; The first radiant section, the second radiant section and the third radiant section form a high frequency path. When the high frequency signal enters the creation from the signal feeding component, the high frequency signal resonates along the high frequency path, so that the creation can be At the same time, it is applied in the low frequency band and the high frequency band, and solves the shortcoming that the existing antenna can only operate a single frequency band, and the system ground layer, the signal feeding member, the antenna body and the capacitor chip are located on the same plane, and can realize the planarization requirement. .
10‧‧‧介質基板 10‧‧‧Media substrate
11‧‧‧系統接地層 11‧‧‧System Grounding Layer
12‧‧‧天線本體 12‧‧‧Antenna body
111‧‧‧第一接地段 111‧‧‧First grounding section
112‧‧‧第二接地段 112‧‧‧Second grounding section
113‧‧‧淨空區 113‧‧‧ clearance area
120‧‧‧信號饋入件 120‧‧‧Signal feeds
121‧‧‧第一輻射段 121‧‧‧First radiant section
122‧‧‧第二輻射段 122‧‧‧second radiant section
123‧‧‧第三輻射段 123‧‧‧third radiant section
124‧‧‧第四輻射段 124‧‧‧fourth radiant section
125‧‧‧第五輻射段 125‧‧‧ fifth radiant section
126‧‧‧電容晶片 126‧‧‧Capacitor chip
127‧‧‧匹配元件 127‧‧‧Matching components
圖1：本創作第一較佳實施例的上視示意圖。 Figure 1 is a top plan view of a first preferred embodiment of the present invention.
圖2：本創作第一較佳實施例的側視示意圖。 Figure 2 is a side elevational view of the first preferred embodiment of the present invention.
圖3：本創作第一較佳實施例的平面示意圖。 Figure 3 is a plan view showing the first preferred embodiment of the present invention.
圖4：本創作第二較佳實施例的平面示意圖。 Figure 4 is a plan view showing a second preferred embodiment of the present invention.
圖5：本創作等效LC共振迴路示意圖。 Figure 5: Schematic diagram of the equivalent LC resonance circuit of this creation.
圖6：第二接地段長度與低頻頻帶、高頻頻帶波形圖。 Figure 6: Waveform diagram of the length of the second ground segment and the low frequency band and high frequency band.
圖7：電容晶片電容量與低頻頻帶波形圖。 Figure 7: Capacitor chip capacitance and low frequency band waveforms.
圖8：電容晶片電容量與低頻頻帶、高頻頻帶波形圖。 Figure 8: Capacitor chip capacitance and low frequency band, high frequency band waveform diagram.
圖9：本創作等效PIFA示意圖。 Figure 9: Schematic diagram of the equivalent PIFA of this creation.
圖10：第三輻射段寬度與低頻頻帶、高頻頻帶波形圖。 Figure 10: Waveform of the third radiant section width and low frequency band, high frequency band.
圖11：第三輻射段寬度與低頻頻帶、高頻頻帶波形圖。 Figure 11: Waveform of the third radiant section width and low frequency band, high frequency band.
圖12：匹配元件與低頻頻帶、高頻頻帶波形圖。 Figure 12: Waveform diagram of matching components and low frequency band, high frequency band.
請參考圖1至圖3所示，本創作多頻共振天線包含有一介質基板10、一系統接地層11、一信號饋入件120、一天線本體12與一電容晶片126。 Referring to FIG. 1 to FIG. 3 , the multi-frequency resonant antenna comprises a dielectric substrate 10 , a system ground layer 11 , a signal feeding component 120 , an antenna body 12 and a capacitor wafer 126 .
該系統接地層11形成在該介質基板10上且在在介質基板10的角落處具有未接地的一淨空區113。本較較佳實施例中，該系統接地層11具有一第一接地段111與一第二接地段112，該第一接地段111係從第二接地段112的側邊延伸。 The system ground layer 11 is formed on the dielectric substrate 10 and has a clearing region 113 that is not grounded at a corner of the dielectric substrate 10. In the preferred embodiment, the system ground layer 11 has a first ground segment 111 and a second ground segment 112 extending from the sides of the second ground segment 112.
該信號饋入件120係設置在該介質基板10上且位於該淨空區113中，該信號饋入件120具有一第一端與一第二端，該第一端電性連接該第一接地段111。該信號饋入件120可為同軸傳輸線、微帶線、共平面波導或SMA接頭。 The signal feeding member 120 is disposed on the dielectric substrate 10 and located in the clearance area 113. The signal feeding member 120 has a first end and a second end. The first end is electrically connected to the first connection. Lot 111. The signal feedthrough 120 can be a coaxial transmission line, a microstrip line, a coplanar waveguide, or an SMA connector.
該天線本體12係設置在該介質基板10的表面且位在該淨空區113中。該天線本體12包含有一第一輻射段121、一第二輻射段122、一第三輻射段123、一第四輻 射段124與一第五輻射段125，如圖4所示，於第二較佳實施例中，該天線本體12可進一步包含一匹配元件127。 The antenna body 12 is disposed on a surface of the dielectric substrate 10 and is located in the clearance area 113. The antenna body 12 includes a first radiating section 121, a second radiating section 122, a third radiating section 123, and a fourth spoke. The segment 124 and a fifth segment 125 are shown in FIG. 4. In the second preferred embodiment, the antenna body 12 further includes a matching component 127.
該第一輻射段121具有一第一端與一第二端，該第一端電性連接該信號饋入件120的第二端，第一輻射段121的第二端係朝第一接地段111的相反方向延伸。 The first radiating section 121 has a first end and a second end. The first end is electrically connected to the second end of the signal feeding member 120. The second end of the first radiating section 121 is opposite to the first grounding section. 111 extends in the opposite direction.
該第二輻射段122具有一第一端與一第二端，該第一端係與第一輻射段121的第二端電性連接，該第二端係朝第二接地段112的相反方向延伸。 The second radiating section 122 has a first end and a second end. The first end is electrically connected to the second end of the first radiating section 121, and the second end is opposite to the second grounding section 112. extend.
該第三輻射段123具有一第一端與一第二端，該第一端係與第二輻射段122的第二端電性連接，該第二端係朝第一接地段111方向延伸且與第一接地段111保持一間隔。 The third radiating section 123 has a first end and a second end. The first end is electrically connected to the second end of the second radiating section 122, and the second end extends toward the first grounding section 111. A gap is maintained with the first ground segment 111.
該第四輻射段124具有一第一端與一第二端，該第一端係與第一輻射段121的第二端電性連接，該第二端係朝第二接地段112的方向延伸且與第二接地段112保持一間隔。 The fourth radiating section 124 has a first end and a second end. The first end is electrically connected to the second end of the first radiating section 121, and the second end extends toward the second grounding section 112. And maintaining a gap with the second ground segment 112.
該第五輻射段125位在第一接地段111與第一輻射段121之間且具有一第一端與一第二端，該第一端係與第一接地段111電性連接，該第二端係朝第一接地段111的相反方向延伸。 The fifth radiating section 125 is located between the first grounding section 111 and the first radiating section 121 and has a first end and a second end. The first end is electrically connected to the first grounding section 111. The two ends extend in opposite directions of the first ground segment 111.
該匹配元件127連接在該第一輻射段121與第五輻射段125之間。 The matching element 127 is connected between the first radiating section 121 and the fifth radiating section 125.
該電容晶片126係設置在該介質基板10上且位於該淨空區113中，該電容晶片126具有一第一端與一第二端，該第一端係電性連接該第四輻射段124與第五輻 射段的第二端，該電容晶片126的第二端電性連接該第二接地段112的邊緣處。 The capacitor chip 126 is disposed on the dielectric substrate 10 and located in the clearance area 113. The capacitor wafer 126 has a first end and a second end. The first end is electrically connected to the fourth radiating section 124. Fifth spoke The second end of the capacitor chip 126 is electrically connected to the edge of the second ground segment 112.
本創作可操作在低頻共振模態或高頻共振模態。 This creation can operate in low frequency resonant mode or high frequency resonant mode.
(一)低頻共振模態 (1) Low frequency resonance mode
請參考圖5所示，當低頻信號進入信號饋入件120後，第一輻射段121、第四輻射段124、電容晶片126與系統接地層11等效為LC共振迴路，如圖3所示，藉由調整第二接地段112的長度(L)，可調整低頻操作頻帶。請參考圖6所示之波形圖，在低頻(約2.5GHz)中，當第二接地段112的長度分別為6mm、5.5mm與5mm時，低頻操作頻帶係逐漸提高。 Referring to FIG. 5, after the low frequency signal enters the signal feeding member 120, the first radiating section 121, the fourth radiating section 124, the capacitor wafer 126 and the system ground layer 11 are equivalent to an LC resonant loop, as shown in FIG. By adjusting the length (L) of the second ground segment 112, the low frequency operating band can be adjusted. Referring to the waveform diagram shown in FIG. 6, in the low frequency (about 2.5 GHz), when the lengths of the second ground segments 112 are 6 mm, 5.5 mm, and 5 mm, respectively, the low frequency operation band is gradually increased.
低頻操作頻帶的調整除了透過前述改變第二接地段112的長度外，還可改變電容晶片126的電容量，請參考圖7所示，細實線代表電容晶片126的電容量C1為最高，虛線代表的電容量C2為最低，隨著電容晶片126的電容量增加，低頻操作頻帶逐漸降低。 The adjustment of the low frequency operation band can change the capacitance of the capacitor wafer 126 in addition to the length of the second ground segment 112. Referring to FIG. 7, the thin solid line represents the highest capacitance C1 of the capacitor wafer 126, and the dotted line The representative capacitance C2 is the lowest, and as the capacitance of the capacitor wafer 126 increases, the low frequency operation frequency band gradually decreases.
此外，請參考圖8所示，粗實線代表電容晶片126的電容量C3最高，兩點鍊線代表的電容量C4最低，由圖8可以觀察出，當電容晶片126的電容量改變時，高頻之操作頻率亦隨之改變，且為非線性的改變。例如當電容晶片126的電容量最高時雖然具有最高的低頻頻帶，其高頻頻帶係落在最高與最低高頻頻帶之間。 In addition, referring to FIG. 8, the thick solid line represents the highest capacitance C3 of the capacitor wafer 126, and the two-point chain line represents the lowest capacitance C4. As can be observed from FIG. 8, when the capacitance of the capacitor wafer 126 is changed, The operating frequency of the high frequency also changes, and it is a nonlinear change. For example, when the capacitance of the capacitor wafer 126 is the highest, although it has the highest low frequency band, its high frequency band falls between the highest and lowest high frequency bands.
(二)高頻共振模態 (2) High frequency resonant mode
請參考圖9，當高頻信號進入信號饋入件120 後，第一輻射段121、第二輻射段122與第三輻射段123等效為平面倒F型天線(PIFA,Planar Inverted-F Antenna,PIFA)，藉由調整第三輻射段123的寬度(W)，可調整高頻的操作頻帶。請參考圖10所示之波形圖，舉例來說，當第三輻射段123的寬度為一預設寬度L時，操作頻段約為5.75GHz；當第三輻射段123的寬度比預設寬度寬0.3mm時，操作頻段約為5.5GHz；當第三輻射段123的寬度比預設寬度寬0.6mm時，操作頻段約為5.25GHz，當第三輻射段123的寬度比預設寬度少0.3mm時，操作頻段約為6GHz；當第三輻射段123的寬度比預設寬度少0.6mm時，操作頻段約為6.3GHz。 Please refer to FIG. 9 , when the high frequency signal enters the signal feed 120 Thereafter, the first radiating section 121, the second radiating section 122 and the third radiating section 123 are equivalent to a Planar Inverted-F Antenna (PIFA), by adjusting the width of the third radiating section 123 ( W), the operating frequency band of the high frequency can be adjusted. Please refer to the waveform diagram shown in FIG. 10. For example, when the width of the third radiating section 123 is a preset width L, the operating frequency band is about 5.75 GHz; when the width of the third radiating section 123 is wider than the preset width. At 0.3 mm, the operating frequency band is about 5.5 GHz; when the width of the third radiant section 123 is 0.6 mm wider than the preset width, the operating frequency band is about 5.25 GHz, and the width of the third radiant section 123 is 0.3 mm less than the preset width. At the time, the operating frequency band is about 6 GHz; when the width of the third radiant section 123 is 0.6 mm less than the preset width, the operating frequency band is about 6.3 GHz.
由上述可知，第三輻射段123的寬度與高頻操作頻段成反比，即第三輻射段123的寬度越窄，高頻操作頻段越高。此外，請參考圖11所示，粗實線代表第三輻射段123的寬度最長(Lmax)，兩點鍊線代表第三輻射段123的寬度最短(Lmin)，由圖11可以觀察出，當第三輻射段123的寬度改變時，雖然高頻操作頻帶隨之改變，但低頻操作頻帶係沒有受到影響。 It can be seen from the above that the width of the third radiating section 123 is inversely proportional to the high frequency operating frequency band, that is, the narrower the width of the third radiating section 123, the higher the high frequency operating frequency band. In addition, referring to FIG. 11, the thick solid line represents the longest width (Lmax) of the third radiating section 123, and the two-point chain line represents the shortest width (Lmin) of the third radiating section 123, which can be observed from FIG. When the width of the third radiating section 123 is changed, although the high frequency operating band is changed, the low frequency operating band is not affected.
該匹配元件127可為短路元件或電感元件，匹配元件127在低頻共振模態與高頻共振模態係有阻抗匹配的作用。請參考圖12所示的波形圖，當匹配元件127為短路元件時，高頻操作頻帶約為5.55GHz；當匹配元件127為1nH的電感元件時，高頻操作頻帶約為5.4GHz；當匹配元件127為3nH的電感元件時，高頻操作頻帶約為5.1GHz。 The matching component 127 can be a shorting component or an inductive component, and the matching component 127 has an impedance matching effect on the low frequency resonant mode and the high frequency resonant mode. Referring to the waveform diagram shown in FIG. 12, when the matching component 127 is a short-circuit component, the high-frequency operation band is about 5.55 GHz; when the matching component 127 is a 1 n-H inductor component, the high-frequency operation band is about 5.4 GHz; When the element 127 is an inductor element of 3 nH, the high frequency operation band is about 5.1 GHz.
綜上所述，本創作能在有限的空間內實現，且 匹配元件127可在低頻與高頻共振模態達到阻抗匹配的效果，且透過調整第二接地段111的長度、電容晶片126的電容量與第三輻射段123的寬度，可分別改變低頻與高頻操作頻帶，操作頻帶的設計較為彈性，而可符合各種操作需求。 In summary, the creation can be implemented in a limited space, and The matching component 127 can achieve an impedance matching effect in the low frequency and high frequency resonant modes, and can change the low frequency and the high respectively by adjusting the length of the second ground segment 111, the capacitance of the capacitor wafer 126, and the width of the third radiating segment 123. In the frequency operation band, the design of the operating frequency band is relatively flexible, and can meet various operational requirements.
10‧‧‧介質基板 10‧‧‧Media substrate
11‧‧‧系統接地層 11‧‧‧System Grounding Layer
12‧‧‧天線本體 12‧‧‧Antenna body
111‧‧‧第一接地段 111‧‧‧First grounding section
112‧‧‧第二接地段 112‧‧‧Second grounding section
113‧‧‧淨空區 113‧‧‧ clearance area
120‧‧‧信號饋入件 120‧‧‧Signal feeds
121‧‧‧第一輻射段 121‧‧‧First radiant section
122‧‧‧第二輻射段 122‧‧‧second radiant section
123‧‧‧第三輻射段 123‧‧‧third radiant section
124‧‧‧第四輻射段 124‧‧‧fourth radiant section
125‧‧‧第五輻射段 125‧‧‧ fifth radiant section
126‧‧‧電容晶片 126‧‧‧Capacitor chip
Claims (7)
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| TW102126637A TWI531123B (en) | 2013-07-25 | 2013-07-25 | Multi-frequency resonant antenna |
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| Application Number | Priority Date | Filing Date | Title |
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| TW102126637A TWI531123B (en) | 2013-07-25 | 2013-07-25 | Multi-frequency resonant antenna |
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| TW201505261A TW201505261A (en) | 2015-02-01 |
| TWI531123B true TWI531123B (en) | 2016-04-21 |
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| TW102126637A TWI531123B (en) | 2013-07-25 | 2013-07-25 | Multi-frequency resonant antenna |
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