TWI528736B - 具三線纏繞線圈式分配器之注入鎖定射頻接收機 - Google Patents
具三線纏繞線圈式分配器之注入鎖定射頻接收機 Download PDFInfo
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- 238000002347 injection Methods 0.000 claims description 16
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- 239000003990 capacitor Substances 0.000 claims description 11
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims description 5
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- 239000002184 metal Substances 0.000 description 11
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/10—Frequency-modulated carrier systems, i.e. using frequency-shift keying
- H04L27/14—Demodulator circuits; Receiver circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0074—Locking of an oscillator by injecting an input signal directly into the oscillator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0023—Balun circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/30—Circuits for homodyne or synchrodyne receivers
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- Signal Processing (AREA)
- Superheterodyne Receivers (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Circuits Of Receivers In General (AREA)
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Description
本發明係關於注入鎖定射頻接收機,特別是具三線纏繞線圈式分配器之注入鎖定射頻接收機。
習知數位調制訊號之射頻接收機解調,例如一正交解調接收機,歸屬於同調解調系統。其將接收訊號分成同相解調路徑與非同相解調路徑,並使用本地振盪單元作接收訊號的同步,因此其有穩定的解調品質與高靈敏度的射頻操作特性,但此習知架構必需使用一本地振盪單元而導致需要較高的功率消耗的要求,因此不適合於短距離無線通訊系統之低功率消耗的規格要求。
對於頻率解調技術,習知注入鎖定技術亦可達到頻率解調目標,經由頻率與振幅的轉換,習知注入鎖定式接收機可對頻率調變之數位調制格式進行解調,但此接收機之解調頻寬將受限於注入鎖定頻寬。由上述的習知注入鎖定技術得知,使用注入鎖定振盪器技術可對於頻率調變(FM)、振幅鍵移調變(ASK)與頻率鍵移調變(FSK)等數位調制格式作非同調之解調。但以上架構皆受限於注入鎖定振盪器之注入鎖定頻寬,故難以達到無線通訊系統之高靈敏度的規格要求。
因此,有必要提供一種創新且具進步性的具三線纏繞線圈式分配器之注入鎖定射頻接收機,以解決上述問題。
本發明提供一種具三線纏繞線圈式分配器之注入鎖定射頻接收機,包括:一個三線纏繞線圈式分配器、一注入鎖定式振盪器及一乘法器。該三線纏繞線圈式分配器具有一個一次側線圈、一個二次側線圈及一個三次側線圈,該三線纏繞線圈式分配器接收一射頻輸入訊號,並輸入至該一次側線圈,該二次側線圈輸出一第一差動訊號,該三次側線圈輸出一第二差動訊號。該注入鎖定式振盪器連接該二次側線圈,依據該第一差動訊號,產生一振盪電流差動訊號。該乘法器連接該三次側線圈及該注入鎖定式振盪器,依據該第二差動訊號及該振盪電流差動訊號,產生一振幅訊號。
利用本發明之三線纏繞線圈式分配器,分別輸入該第一差動訊號及該第二差動訊號至該注入鎖定式振盪器及該乘法器,可達到高靈敏度的頻率鍵移解調操作,且該二次側線圈可為該注入鎖定式振盪器之諧振電感,以實現高體積化與微小化之特點。另外,利用本發明之三線纏繞線圈式分配器可降低放大器之使用數量,以減少整體注入鎖定射頻接收機之功率消耗,且降低系統複雜度,故本發明之注入鎖定射頻接收機適合短距離無線通訊或無線感測等應用。
參考圖1,其顯示本發明具三線纏繞線圈式分配器之注入鎖定射頻接收機之電路方塊示意圖。本發明具三線纏繞線圈式分配器之注入鎖定射頻接收機10包括:一個三線纏
繞線圈式分配器20、一注入鎖定式振盪器30及一乘法器40。該三線纏繞線圈式分配器20具有一個一次側線圈21、一個二次側線圈22及一個三次側線圈23,該三線纏繞線圈式分配器20接收一射頻輸入訊號,並輸入至該一次側線圈21,該二次側線圈22輸出一第一差動訊號,該三次側線圈23輸出一第二差動訊號。在本實施例中,該第一差動訊號及該第二差動訊號係為等振幅之差動訊號,且表示為+I inj 與-I inj 。
該注入鎖定式振盪器30連接該二次側線圈22,依據該第一差動訊號,產生一振盪電流差動訊號(+I osc 與-I osc )。該乘法器40連接該三次側線圈23及該注入鎖定式振盪器30,依據該第二差動訊號及該振盪電流差動訊號,產生一振幅訊號。
本發明之注入鎖定射頻接收機10另包括一天線50、一帶通濾波器60及一放大器70,該天線50、該帶通濾波器60及該放大器70串聯連接,該天線50用以接收一射頻接收訊號,並輸入至該帶通濾波器60,以濾除雜訊及干擾訊號,再輸入該放大器70,以放大該射頻接收訊號為該射頻輸入訊號。在本實施例中,該放大器70為一低雜訊放大器。
本發明之注入鎖定射頻接收機10另包括一低通濾波器80,連接至該乘法器40,依據該振幅訊號,產生一輸出訊號Vout。
本發明注入鎖定射頻接收機10之三線纏繞線圈式分配器20分別輸入該第一差動訊號及該第二差動訊號至該注入鎖
定式振盪器及該乘法器,可達到高靈敏度的頻率鍵移解調操作,且該二次側線圈22亦可作為該注入鎖定式振盪器30之諧振電感,以實現高體積化與微小化之特點。另外,利用本發明之三線纏繞線圈式分配器20可降低放大器之使用數量,以減少整體注入鎖定射頻接收機之功率消耗,且降低系統複雜度,故本發明之注入鎖定射頻接收機10適合短距離無線通訊或無線感測等應用。
參考圖2,其顯示本發明三線纏繞線圈式分配器之繞線結構示意圖。參考圖3,其顯示本發明三線纏繞線圈式分配器之等效電路示意圖。配合參考圖2及圖3,該三線纏繞線圈式分配器20經由電磁耦合路徑k pt 與k ps 將該一次側線圈21之訊號分別耦合並饋入至該二次側線圈22與該三次側線圈23。該一次側線圈21包括一次側金屬纏繞線段211及雙埠端點212、213,其中一端點213為交流接地端點,另一端點212輸入該射頻輸入訊號。
該二次側線圈22包括二次側金屬纏繞線段221、222、雙埠端點223、224及一中間抽頭端點225,該二次側線圈22之雙埠端點223、224輸出該第一差動訊號,該二次側線圈之中間抽頭端點225連接一直流偏壓。且該二次側線圈22另包括一金屬線段226,連接至該中間抽頭端點225。
該三次側線圈23包括三次側纏繞金屬線段231、232、雙埠端點233、234及一中間抽頭端點235,該三次側線圈23之雙埠端點233、234輸出該第二差動訊號,該三次側線圈23之中間抽頭端點235為交流接地端點。且該三次側線圈
23另包括一金屬線段236,連接至該中間抽頭端點235。另外,該三線纏繞線圈式分配器20另包括二接地金屬環24、25。
參考圖4,其顯示本發明注入鎖定射頻接收機之電路示意圖。該放大器70包括一N型金氧半場效電晶體705及一P型金氧半場效電晶體706,以組成一互補式電流再利用低雜訊放大器架構。該放大器70另包括一電阻703,連接至該N型金氧半場效電晶體705與P型金氧半場效電晶體706之基體端,在適當的設計之下,可降低該N型金氧半場效電晶體705與P型金氧半場效電晶體706之臨界電壓,使該放大器70操作在0.8伏特的操作電壓707。
另外,該放大器70另包括一迴授電阻702係作為阻抗匹配與雜訊匹配之設計。當射頻接收訊號由輸入端點饋入至該放大器70後,在適當的操作下進行訊號功率放大,並輸出射頻輸入訊號至該三線纏繞線圈式分配器20之該一次側線圈21,進行訊號傳遞。訊號以電磁耦合路徑k ps 與k pt ,分別饋入至該二次側線圈22及該三次側線圈23,該二次側線圈22及該三次側線圈23分別輸出等振幅之差動訊號+I inj 與-I inj 各自饋入至該注入鎖定式振盪器30與該乘法器40。
該注入鎖定式振盪器30包括:一主動埠、一基體偏壓網路及一諧振埠。該主動埠包括二N型金氧半場效電晶體301、302及二第一電阻303、304,二第一電阻303、304分別連接至二N型金氧半場效電晶體301、302之閘極。該基體偏壓網路包括二第二電阻305、306及二第一電容307、
308,其中第二電阻305及第一電容307串聯連接,且第二電阻306及第一電容308串聯連接,分別對二N型金氧半場效電晶體301、302之基體進行偏壓。該諧振埠包括二可變電容311、312及該二次側線圈22,二可變電容311、312之控制電壓由一偏壓電壓313所控制。該注入鎖定式振盪器30之操作電壓係由該直流偏壓314所控制,該直流偏壓314連接該二次側線圈22之中間抽頭端點。
在本實施例中,該乘法器40為一吉伯特細胞開關級電路,且該乘法器40堆疊至該注入鎖定式振盪器30之上,形成直流再利用之注入鎖定式自我振盪混頻器90。
該乘法器40包括:四N型場效電晶體401、402、403、404及二負載電阻405、406。該乘法器40具有一第一N型場效電晶體401、一第二N型場效電晶體402、一第三N型場效電晶體403及一第四N型場效電晶體404。該第一N型場效電晶體401及第二N型場效電晶體402之閘極連接,且連接至該三次側線圈23之雙埠端點之其中一埠端點233。該第三N型場效電晶體403及該第四N型場效電晶體404之閘極連接,且連接至該三次側線圈23之雙埠端點之另一埠端點234。該第一N型場效電晶體401及該第三N型場效電晶體403之源極連接,且該第二N型場效電晶體402及該第四N型場效電晶體404之源極連接,其分別連接至該注入鎖定式振盪器30之該振盪電流差動訊號。
二負載電阻405、406連接至一直流電壓407,且分別連接至該第一N型場效電晶體401及該第四N型場效電晶體
404之汲極,及該第二N型場效電晶體402及該第三N型場效電晶體403之汲極。
本發明注入鎖定射頻接收機10另包括二偏壓電阻501、502,分別連接至二偏壓電壓503、504,且分別連接至該三次側線圈23之雙埠端點233、234。
相較於習知頻率鍵移調解調接收機,如正交解調接收機,本發明之注入鎖定射頻接收機不需要透過額外的載波回復電路即可對數位調制訊號進行解調,因此架構上相對簡單,適合超低功耗、高能源效率接收機之實現。
本發明注入鎖定射頻接收機之頻率解調核心電路在架構上採用電流再利用之注入鎖定式自我振盪混頻堆疊結構,並搭配三線纏繞線圈式分配器,且注入鎖定式自我振盪混頻器操作於次臨界區,以提高整體接收機之解調靈敏度。本發明之注入鎖定射頻接收機因具有高靈敏度操作的射頻特性表現,因此其可降低後端之基頻電路對於訊號處理的負擔並可提高整體訊號的解調品質。
本發明之注入鎖定射頻接收機具有低功率消耗與高靈敏度的優異射頻特性,並具有架構的簡單與易於積體電路與微小化的獨特性能,故適合實踐於短距離無線通訊系統之射頻前端接收機上。
惟上述實施例僅為說明本發明之原理及其功效,而非用以限制本發明。因此,習於此技術之人士對上述實施例進行修改及變化仍不脫本發明之精神。本發明之權利範圍應如後述之申請專利範圍所列。
10‧‧‧本發明注入鎖定射頻接收機
20‧‧‧三線纏繞線圈式分配器
21‧‧‧一次側線圈
22‧‧‧二次側線圈
23‧‧‧三次側線圈
24、25‧‧‧接地金屬環
30‧‧‧注入鎖定式振盪器
40‧‧‧乘法器
50‧‧‧天線
60‧‧‧帶通濾波器
70‧‧‧放大器
80‧‧‧低通濾波器
90‧‧‧注入鎖定式自我振盪混頻器
211‧‧‧一次側金屬纏繞線段
212、213‧‧‧雙埠端點
221、222‧‧‧二次側金屬纏繞線段
223、224‧‧‧雙埠端點
225‧‧‧中間抽頭端點
226‧‧‧金屬線段
231、232‧‧‧三次側纏繞金屬線段
233、234‧‧‧雙埠端點
235‧‧‧中間抽頭端點
236‧‧‧金屬線段
301、302‧‧‧N型金氧半場效電晶體
303、304‧‧‧第一電阻
305、306‧‧‧第二電阻
307、308‧‧‧第一電容
311、312‧‧‧可變電容
313‧‧‧偏壓電壓
314‧‧‧直流偏壓
401‧‧‧第一N型場效電晶體
402‧‧‧第二N型場效電晶體
403‧‧‧第三N型場效電晶體
404‧‧‧第四N型場效電晶體
405、406‧‧‧負載電阻
407‧‧‧直流電壓
501、502‧‧‧偏壓電阻
503、504‧‧‧偏壓電壓
702‧‧‧迴授電阻
703‧‧‧電阻
705‧‧‧N型金氧半場效電晶體
706‧‧‧P型金氧半場效電晶體
707‧‧‧操作電壓
圖1顯示本發明具三線纏繞線圈式分配器之注入鎖定射頻接收機之電路方塊示意圖;圖2顯示本發明三線纏繞線圈式分配器之繞線結構示意圖;圖3顯示本發明三線纏繞線圈式分配器之等效電路示意圖;及圖4顯示本發明注入鎖定射頻接收機之電路示意圖。
10‧‧‧本發明注入鎖定射頻接收機
20‧‧‧三線纏繞線圈式分配器
21‧‧‧一次側線圈
22‧‧‧二次側線圈
23‧‧‧三次側線圈
30‧‧‧注入鎖定式振盪器
40‧‧‧乘法器
50‧‧‧天線
60‧‧‧帶通濾波器
70‧‧‧放大器
80‧‧‧低通濾波器
Claims (9)
- 一種具三線纏繞線圈式分配器之注入鎖定射頻接收機,包括:一個三線纏繞線圈式分配器,具有一個一次側線圈、一個二次側線圈及一個三次側線圈,該三線纏繞線圈式分配器接收一射頻輸入訊號,並輸入至該一次側線圈,該二次側線圈輸出一第一差動訊號,該三次側線圈輸出一第二差動訊號;一注入鎖定式振盪器,連接該二次側線圈,依據該第一差動訊號,產生一振盪電流差動訊號;及一乘法器,連接該三次側線圈及該注入鎖定式振盪器,依據該第二差動訊號及該振盪電流差動訊號,產生一振幅訊號。
- 如請求項1之注入鎖定射頻接收機,另包括一天線、一帶通濾波器及一放大器,該天線、該帶通濾波器及該放大器串聯連接,該天線用以接收一射頻接收訊號,並輸入至該帶通濾波器,以濾除雜訊及干擾訊號,再輸入該放大器,以放大該射頻接收訊號為該射頻輸入訊號。
- 如請求項1之注入鎖定射頻接收機,其中該一次側線圈包括雙埠端點,其中一端點為交流接地端點,另一端點輸入該射頻輸入訊號;該二次側線圈包括雙埠端點及一中間抽頭端點,該二次側線圈之雙埠端點輸出該第一差動訊號,該二次側線圈之中間抽頭端點連接一直流偏壓;該三次側線圈包括雙埠端點及一中間抽頭端點,該 三次側線圈之雙埠端點輸出該第二差動訊號,該三次側線圈之中間抽頭端點為交流接地端點。
- 如請求項1之注入鎖定射頻接收機,其中該注入鎖定式振盪器包括:一主動埠,包括二N型金氧半場效電晶體及二第一電阻,二第一電阻分別連接至二N型金氧半場效電晶體之閘極;一基體偏壓網路,包括二第二電阻及二第一電容,其中第二電阻及第一電容串聯連接,分別對二N型金氧半場效電晶體之基體進行偏壓;及一諧振埠,包括二可變電容及該二次側線圈,二可變電容之控制電壓由一偏壓電壓所控制。
- 如請求項3之注入鎖定射頻接收機,其中該注入鎖定式振盪器之操作電壓係由該直流偏壓所控制,該直流偏壓連接該二次側線圈之中間抽頭端點。
- 如請求項1之注入鎖定射頻接收機,其中該乘法器為一吉伯特細胞開關級電路,該乘法器堆疊至該注入鎖定式振盪器,以形成一注入鎖定式自我振盪混頻器。
- 如請求項3之注入鎖定射頻接收機,其中該乘法器包括:四N型場效電晶體,具有一第一N型場效電晶體、一第二N型場效電晶體、一第三N型場效電晶體及一第四N型場效電晶體,該第一N型場效電晶體及第二N型場效電晶體之閘極連接,且連接至該三次側線圈之雙埠端點之其 中一埠端點,該第三N型場效電晶體及該第四N型場效電晶體之閘極連接,且連接至該三次側線圈之雙埠端點之另一埠端點;該第一N型場效電晶體及該第三N型場效電晶體之源極連接,且該第二N型場效電晶體及該第四N型場效電晶體之源極連接,其分別連接至該注入鎖定式振盪器之該振盪電流差動訊號;及二負載電阻,連接至一直流電壓,且分別連接至該第一N型場效電晶體及該第四N型場效電晶體之汲極,及該第二N型場效電晶體及該第三N型場效電晶體之汲極。
- 如請求項3之注入鎖定射頻接收機,另包括二偏壓電阻,分別連接至二偏壓電壓,且分別連接至該三次側線圈之雙埠端點。
- 如請求項1之注入鎖定射頻接收機,另包括一低通濾波器,連接至該乘法器,依據該振幅訊號,產生一輸出訊號。
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US13/870,433 US9049080B2 (en) | 2012-11-19 | 2013-04-25 | Injection-locked RF receiver having trifilar transformer splitter |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI744822B (zh) * | 2016-12-29 | 2021-11-01 | 美商天工方案公司 | 前端系統及相關裝置、積體電路、模組及方法 |
US11682649B2 (en) | 2017-03-10 | 2023-06-20 | Skyworks Solutions, Inc. | Radio frequency modules |
US11984857B2 (en) | 2015-12-30 | 2024-05-14 | Skyworks Solutions, Inc. | Impedance transformation circuit for amplifier |
US12003025B2 (en) | 2016-04-19 | 2024-06-04 | Skyworks Solutions, Inc. | Selectively shielded radio frequency modules |
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TWI497956B (zh) * | 2013-11-19 | 2015-08-21 | Univ Nat Chi Nan | Frequency shift keying receiving device |
GB201705913D0 (en) | 2017-04-12 | 2017-05-24 | Novelda As | Filter |
US11569340B2 (en) | 2019-03-12 | 2023-01-31 | Analog Devices, Inc. | Fully symmetrical laterally coupled transformer for signal and power isolation |
TWI785757B (zh) * | 2021-08-24 | 2022-12-01 | 逢甲大學 | 電晶體及其放大器 |
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US3646421A (en) * | 1970-02-25 | 1972-02-29 | Eastern Co | Wind direction indicator synchro system |
FR2687228B1 (fr) * | 1992-02-12 | 1994-05-06 | Schlumberger Services Petroliers | Procede et dispositif de diagraphie pour l'etude de caracteristiques geometriques d'un forage. |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US11984857B2 (en) | 2015-12-30 | 2024-05-14 | Skyworks Solutions, Inc. | Impedance transformation circuit for amplifier |
US12003025B2 (en) | 2016-04-19 | 2024-06-04 | Skyworks Solutions, Inc. | Selectively shielded radio frequency modules |
TWI744822B (zh) * | 2016-12-29 | 2021-11-01 | 美商天工方案公司 | 前端系統及相關裝置、積體電路、模組及方法 |
US11864295B2 (en) | 2016-12-29 | 2024-01-02 | Skyworks Solutions, Inc. | Selectively shielded radio frequency module with multi-mode stacked power amplifier stage |
US11682649B2 (en) | 2017-03-10 | 2023-06-20 | Skyworks Solutions, Inc. | Radio frequency modules |
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US20140140443A1 (en) | 2014-05-22 |
US9049080B2 (en) | 2015-06-02 |
TW201421918A (zh) | 2014-06-01 |
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