TWI527924B - Magnetron with controllable electromagnetic field - Google Patents
Magnetron with controllable electromagnetic field Download PDFInfo
- Publication number
- TWI527924B TWI527924B TW103104670A TW103104670A TWI527924B TW I527924 B TWI527924 B TW I527924B TW 103104670 A TW103104670 A TW 103104670A TW 103104670 A TW103104670 A TW 103104670A TW I527924 B TWI527924 B TW I527924B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- permanent magnet
- electromagnetic coil
- conductive substrate
- magnetron sputtering
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
本發明係關於一種濺鍍靶裝置,特別是指一種在濺鍍靶後方設有永久磁鐵、導磁鐵及電磁線圈,利用安排電磁線圈的位置及導入該線圈的電流作變化達到變化磁場之大小而達到改變電漿位置的目的,進而達成提升靶材利用率的目的。 The invention relates to a sputtering target device, in particular to a permanent magnet, a magnet and a magnetic coil disposed behind the sputtering target, and the position of the electromagnetic coil and the current introduced into the coil are changed to reach the magnitude of the changing magnetic field. The purpose of changing the position of the plasma is achieved, and the purpose of improving the utilization rate of the target is achieved.
磁控濺鍍(magnetron sputtering)是指真空濺鍍腔內在濺鍍靶材的後方安排電磁鐵或永久磁鐵以產生磁場並使得磁力線由靶材後方穿透至靶材的前方,再回到的靶材的後方之電磁鐵或永久磁鐵。電漿產生器利用磁場的導引將電漿離子氣體轟擊金屬靶材的預定區域以敲出金屬原子,再沈積金屬原子於靶材下方的工件表面上以形成薄膜。電漿氣體可以包含惰性氣體如氬氣,或者是可以和靶材反應的反應氣體。 Magnetron sputtering refers to the arrangement of an electromagnet or a permanent magnet behind a sputter target in a vacuum sputtering chamber to generate a magnetic field and cause the magnetic field line to penetrate from the rear of the target to the front of the target, and then return to the target. Electromagnet or permanent magnet at the rear of the material. The plasma generator utilizes the guidance of the magnetic field to bombard the predetermined region of the metal target to knock out the metal atoms, and then deposits metal atoms on the surface of the workpiece below the target to form a thin film. The plasma gas may contain an inert gas such as argon or a reaction gas that can react with the target.
這様的結果將使得靶材猶如一個穿隧(tunnel-like)的結構形成一電子阱(electron trap)。這種效應在穿隧形的電子阱在金屬靶材形成一封閉迴路後會更進一步強化,而變得更有效率。然而,它却使電漿形成迴路,而使得靶材猶如被穿隧般的損耗,這結果將存在靶材的利用率被顯著降低的缺點。 The result of this will cause the target to form an electron trap like a tunnel-like structure. This effect is further enhanced when the tunneled electron trap is further strengthened after the metal target forms a closed loop. However, it causes the plasma to form a loop, causing the target to be tunnel-like, which results in the disadvantage that the utilization of the target is significantly reduced.
因此,一種可移動磁場的濺鍍靶,例如日本專利JP 63-247366設計一種可移動的環狀靶,以達到靶材表面可被均勻削減目的。另中華民國專利第I299365號。揭示一可移動靶件之濺鍍裝置及方法。這個裝置需要一線性馬達來驅動靶材。 Therefore, a sputtering target of a movable magnetic field, such as Japanese Patent JP 63-247366 designs a movable annular target to achieve uniform reduction of the target surface. Another Republic of China patent No. I299365. A sputtering apparatus and method for moving a target is disclosed. This device requires a linear motor to drive the target.
習知技術的再一的實施例可以參見中華民國專利第I391514,這個專利所揭示的磁控濺鍍靶,請參見圖1所示的立體局部剖面圖。請參閱圖1所示的一種磁控濺鍍機200包含一載板210、一磁鐵組220、一內部線圈230、一外部線圈240、一中間磁環250、一靶材260以及一導磁鐵環270,磁鐵組220係設置於載板210之承載表面211上,以提供磁場源,內部線圈230係繞於一永久磁鐵221上。永久磁鐵221外側更包含一外部磁鐵環222,內部線圈230係繞設於永久磁鐵221以增強磁場源,內部線圈230之較佳匝數約為40匝,外部線圈240設置於磁鐵組220外側以改變軸向磁場最低點位置,外部線圈240之匝數約為900匝,該中間磁環250係設置於磁鐵組220之該永久磁鐵221與該外部磁鐵環222之間以增強中間的磁場並改變該磁控濺鍍機200內磁場的大小,導磁鐵環270係設置於該靶材260之該第一表面261,以便徑向引導磁場之磁力線方向,使得磁場方向平行於該靶材260,此外,導磁鐵環270係對應於中間磁環250。外部磁鐵環222比中間磁環250高。利用中間磁環250、導磁鐵環270及外部線圈240等元件,以達到磁力線繞行方向不會過度集中於該靶材260之部分區域,導致靶材260被蝕刻穿透而提高靶材260的使用期限之目的。 A further embodiment of the prior art can be found in the Republic of China Patent No. I391514, the magnetron sputtering target disclosed in this patent, see the perspective partial cross-sectional view shown in FIG. Referring to FIG. 1 , a magnetron sputtering machine 200 includes a carrier 210 , a magnet group 220 , an internal coil 230 , an external coil 240 , an intermediate magnetic ring 250 , a target 260 , and a conductive magnet ring . 270, the magnet group 220 is disposed on the bearing surface 211 of the carrier 210 to provide a magnetic field source, and the inner coil 230 is wound around a permanent magnet 221. The outer side of the permanent magnet 221 further includes an outer magnet ring 222. The inner coil 230 is wound around the permanent magnet 221 to enhance the magnetic field source. The inner coil 230 has a preferred number of turns of about 40 匝, and the outer coil 240 is disposed outside the magnet group 220. The position of the lowest point of the axial magnetic field is changed, and the number of turns of the outer coil 240 is about 900 匝. The intermediate magnetic ring 250 is disposed between the permanent magnet 221 of the magnet group 220 and the outer magnet ring 222 to enhance the magnetic field in the middle and change The size of the magnetic field in the magnetron sputtering machine 200 is disposed on the first surface 261 of the target 260 to radially guide the magnetic field lines of the magnetic field such that the magnetic field direction is parallel to the target 260. The magnet ring 270 corresponds to the intermediate magnetic ring 250. The outer magnet ring 222 is taller than the intermediate magnetic ring 250. An element such as the intermediate magnetic ring 250, the magnetizing ring 270, and the outer coil 240 is used to achieve that the direction of the magnetic flux is not excessively concentrated in a portion of the target 260, causing the target 260 to be etched through to improve the target 260. The purpose of the term of use.
習知技術的濺鍍靶的再一的實施例可以參見美國專利US第6338781號,該專利由Sichmann等人所獲得。請參照圖2所示為半個陰極(含靶材)的結構圖,另一半個陰極(含靶材)與圖2的結構圖是以迴轉軸44為中心,呈鏡像對稱的(未圖示)。如圖2所示,半個陰極的結構圖包含第一導磁軛鐵21,第二導磁軛鐵21’,兩者間以一永久磁鐵9所連接。 第二導磁軛鐵21’又連接一鞋型導磁材料14。螺栓20則連接於第一導磁軛鐵21。 A further embodiment of a prior art sputtering target can be found in U.S. Patent No. 6,337,781, issued to Sichmann et al. Please refer to FIG. 2 for a structural diagram of a half cathode (including a target), and the other half of the cathode (including the target) and the structural diagram of FIG. 2 are mirror-symmetrical with respect to the rotary axis 44 (not shown). ). As shown in Fig. 2, the structural view of the half cathode includes a first yoke yoke 21 and a second yoke yoke 21' which are connected by a permanent magnet 9. The second yoke iron 21' is in turn coupled to a shoe-type magnetically permeable material 14. The bolt 20 is connected to the first yoke iron 21.
第一導磁軛鐵21和第二導磁軛鐵21’之間的空間容置一濺鍍靶8,而濺鍍靶8的上方則另有兩個線圈76、77。在兩個線圈76、77中間則是一鐵心,它也是導磁材料同時提供遮蔽功能,它遮蔽了靶空間(target space;即靶和待濺鍍基板27之間的空隙)84對抗永久磁鐵9的短路磁力線(shields the target space 84 against the short circuit magnetic field lines of the magnet 9),因此,磁場變化可因相當低的電流注入於電磁線圈而產生。圖2同時示對應的磁力線路徑分佈。 A space between the first yoke yoke 21 and the second yoke 21' is accommodated with a sputtering target 8, and two coils 76, 77 are provided above the sputtering target 8. Between the two coils 76, 77 is a core which also provides a shielding function for the magnetically permeable material, which shields the target space (the gap between the target and the substrate 27 to be sputtered) 84 against the permanent magnet 9 The short circuit magnetic field lines of the magnets (shelds the target space 84 against the short circuit magnetic field lines of the magnet 9), therefore, the magnetic field changes can be generated by injecting a relatively low current into the electromagnetic coil. Figure 2 also shows the corresponding magnetic field line distribution.
上述的習知技術省却了靶材移動的驅動裝置,但得有外、內圈永久磁鐵(它們的高度不同)及內、外圈電磁鐵。電磁鐵沒有冷却裝置。 The above-mentioned prior art eliminates the driving means for moving the target, but has external and inner ring permanent magnets (their heights are different) and inner and outer ring electromagnets. The electromagnet has no cooling device.
有鑑於此,本發明之一目的便是要提供一技術使用內外永久磁石與一圈的電磁線圈,變化導入線圈的電流,達到變化磁場之目的,進而可使靶材的靶面侵蝕範圍擴大,有效消除靶面不均勻的侵蝕,特別是靶材邊綠的鍍膜可以更均勻。 In view of the above, an object of the present invention is to provide a technique for using an inner and outer permanent magnet and a coil of electromagnetic coil to change the current introduced into the coil to achieve the purpose of changing the magnetic field, thereby further expanding the target surface erosion range of the target. Effectively eliminates uneven erosion of the target surface, especially the green coating of the target side can be more uniform.
本發明之一目的是提供一種磁控濺鍍陰極,電漿團能在控制線圈電流大小及周期而位移位置,以達到提高靶材利用率之目的。 It is an object of the present invention to provide a magnetron sputtering cathode which can control the current magnitude and period of the coil to be displaced to achieve the purpose of improving the utilization of the target.
本發明所揭露之磁控濺鍍陰極,一種磁控濺鍍陰極,至少包含:一導磁基板;一封閉的第一永久磁鐵環,座於該導磁基板的外圍上;一第二永久磁鐵座於該導磁基板中心,第二永久磁鐵與第一永久磁鐵的N極相對於該靶面為相反方向;一封閉的電磁線圈設於導磁基板上,且相對於第二永久磁鐵而言。電磁線圈鄰接於第一永久磁鐵環,該電磁線圈 導入的電流周期變化以變化電漿團的位置以轟擊該靶材;電磁線圈的範圍在靶外圍至三分之二靶寬之間;一冷却銅底板設於第二永久磁鐵條、第一永久磁鐵環所包圍的空間內且在該封閉的電磁線圈上;及一靶材設於該冷却銅底板上。冷却銅底板是由位於導磁基板的至少一支撐柱所支撐。 The magnetron sputtering cathode disclosed in the present invention comprises a magnetron sputtering cathode comprising at least: a magnetically conductive substrate; a closed first permanent magnet ring seated on a periphery of the magnetically conductive substrate; and a second permanent magnet Sitting at the center of the magnetically permeable substrate, the N-pole of the second permanent magnet and the first permanent magnet are opposite to the target surface; a closed electromagnetic coil is disposed on the magnetically permeable substrate and is opposite to the second permanent magnet . The electromagnetic coil is adjacent to the first permanent magnet ring, and the electromagnetic coil The introduced current period changes to change the position of the plasma mass to bombard the target; the electromagnetic coil ranges from the periphery of the target to two-thirds of the target width; a cooling copper bottom plate is disposed on the second permanent magnet strip, the first permanent a space surrounded by the magnet ring and on the closed electromagnetic coil; and a target disposed on the cooling copper base plate. The cooled copper substrate is supported by at least one support post on the magnetically permeable substrate.
在另一實施例中,導磁基板具有單位階梯形狀,即中間部位有一平台,平台中心可以設置第二永久磁鐵,平台之其它部分支撐冷却銅底板(省掉了支撐柱)。一如第一實施例第一永久磁鐵是在整個導磁基板的外圍,並且第一永久磁鐵及第二永久磁鐵的N極(磁北極)相對於靶面是相反的。電腦模擬的實驗顯示,電磁線圈導入的電流周期變化可以變化電漿團的位置,本發明所提供的技術,電漿團的位置因電流變化而移動比已知的技術(Sichmann)提高至少35%的移動量,也因此,電漿移動效率可提高10%以上。 In another embodiment, the magnetically permeable substrate has a unit step shape, that is, a platform is provided at the intermediate portion, a second permanent magnet may be disposed at the center of the platform, and the other portion of the platform supports the cooling copper base plate (the support column is omitted). As in the first embodiment, the first permanent magnet is on the periphery of the entire magnetic conductive substrate, and the N poles (magnetic north poles) of the first permanent magnet and the second permanent magnet are opposite with respect to the target surface. Computer simulation experiments show that the current cycle change introduced by the electromagnetic coil can change the position of the plasma mass. According to the technology provided by the present invention, the position of the plasma mass moves by the current change by at least 35% compared with the known technology (Sichmann). The amount of movement, therefore, plasma efficiency can be increased by more than 10%.
200‧‧‧磁控濺鍍機 200‧‧‧Magnetic Sputtering Machine
210‧‧‧載板 210‧‧‧ Carrier Board
230、76、77‧‧‧內部線圈 230, 76, 77‧‧‧ internal coil
220‧‧‧磁鐵組 220‧‧‧ Magnet group
150、240‧‧‧外部線圈 150, 240‧‧‧ external coil
250‧‧‧中間磁環 250‧‧‧Intermediate magnetic ring
8、140、260‧‧‧靶材 8, 140, 260‧ ‧ targets
270‧‧‧導磁鐵環 270‧‧‧Guide magnet ring
211‧‧‧載板之承載表面 211‧‧‧ carrying surface of the carrier
9、221‧‧‧永久磁鐵 9, 221‧‧‧ permanent magnet
222‧‧‧外部磁鐵環 222‧‧‧External magnet ring
261‧‧‧靶材之該第一表面 261‧‧‧ the first surface of the target
44‧‧‧迴轉軸 44‧‧‧Rotary axis
21‧‧‧第一導磁軛鐵 21‧‧‧First yoke iron
21’‧‧‧第二導磁軛鐵 21’‧‧‧Second magnetic yoke
100’‧‧‧導磁基板的平台部位 100'‧‧‧ Platform part of the magnetically conductive substrate
14‧‧‧鞋型導磁材料 14‧‧‧Shoe type magnetically permeable materials
20‧‧‧螺栓 20‧‧‧ bolt
27‧‧‧待濺鍍基板 27‧‧‧ Spilled substrate
84‧‧‧靶空間 84‧‧‧ Target space
100‧‧‧導磁基板 100‧‧‧magnetic substrate
110‧‧‧第一永久磁鐵 110‧‧‧First permanent magnet
120‧‧‧第二永久磁鐵 120‧‧‧Second permanent magnet
130‧‧‧冷却銅基板 130‧‧‧Cooled copper substrate
160‧‧‧冷却管路 160‧‧‧Cooling line
170‧‧‧電漿團 170‧‧‧Electric pulp group
180‧‧‧靶面磁力線水平處 180‧‧‧Target magnetic field line level
175‧‧‧箭頭方向 175‧‧‧ arrow direction
190、191、192‧‧‧磁通密度對距離之曲線`125支撐座 190, 191, 192‧‧‧ magnetic flux density versus distance curve `125 support
90、91、92‧‧‧分別為電流0A、14A、-14A之磁通密度靶材表面分佈關係曲線 90, 91, 92‧‧‧ are the surface distribution curves of magnetic flux density targets of currents 0A, 14A, and -14A, respectively
圖1示習知的濺鍍陰極;圖2示習知的濺鍍靶結構及磁力線路徑;圖3A示依據本發明的第一實施例所設計之濺鍍靶結構示意圖;圖3B示依據本發明的第一實施例所設計之濺鍍靶結構俯視示意圖;圖3C示依據本發明的第二實施例所設計之濺鍍靶結構橫截 面示意圖;圖4A、圖4B及圖4C分別示本發明的之濺鍍靶在電磁線圈電流零、低電流、高電流時之電漿團位置;圖5A、圖5B及圖5C分別示本發明的之濺鍍靶電磁線圈電流I=0,I=14A及I=-14A時所模擬之磁力線路徑;圖6示本發明的之濺鍍靶受電磁線圈電流變化所產生電漿團移動距離;圖7示習知濺鍍靶(半個陰極之結構)。 1 shows a conventional sputtering cathode; FIG. 2 shows a conventional sputtering target structure and a magnetic line path; FIG. 3A shows a schematic diagram of a sputtering target designed according to the first embodiment of the present invention; FIG. 3B shows a schematic diagram of the sputtering target according to the present invention; A top view of a sputtering target structure designed in a first embodiment; FIG. 3C shows a cross-section of a sputtering target structure designed in accordance with a second embodiment of the present invention 4A, FIG. 4B and FIG. 4C respectively show the position of the plasma ball of the sputtering target of the present invention at zero current, low current and high current of the electromagnetic coil; FIG. 5A, FIG. 5B and FIG. The magnetic flux path simulated by the sputtering target electromagnetic coil current I=0, I=14A and I=-14A; FIG. 6 shows the moving distance of the plasma generated by the sputtering target of the present invention caused by the change of the electromagnetic coil current; Fig. 7 shows a conventional sputtering target (structure of a half cathode).
圖8A、圖8B及圖8C示習知濺鍍靶,線圈電流分別為0、14A、-14A時磁力線模擬結果。 8A, 8B, and 8C show magnetic field line simulation results of a conventional sputtering target with coil currents of 0, 14A, and -14A, respectively.
圖9A及圖9B示依據本發明的再一實施例,電磁線圈位於導磁基板上不同的位置,B⊥=0的位置隨電磁線圈所在位置而變化。 9A and 9B show, according to still another embodiment of the present invention, the electromagnetic coil is located at different positions on the magnetically permeable substrate, and the position of B ⊥ = 0 varies with the position of the electromagnetic coil.
為使本發明之上述目的、特徵和優點能更明顯易懂,下文依本發明設計的磁控靶材的一較佳實施例,並配合所附相關圖式,作詳細說明如下。 In order to make the above objects, features and advantages of the present invention more comprehensible, a preferred embodiment of a magnetron target designed in accordance with the present invention, together with the accompanying drawings, is described in detail below.
如圖3A所示為依據本發明的第一實施例所繪製的一圓環型或磁控濺鍍靶的剖面示意圖。一導磁基板100上有一封閉的第一永久磁鐵環110,座於該導磁基板100的外圍上;一第二永久磁鐵120座於該導磁基板中心。第二永久磁鐵120可以是磁鐵條或者也可以是封閉迴路的磁鐵。 第二永久磁鐵120與第一永久磁鐵環110的N極相對於靶面為相反方向。即當第一永久磁鐵環110朝外的磁極是N極時,第二永久磁鐵120朝外的磁極就是S極。反之,當第一永久磁鐵環110朝外的磁極是S極時,第二永久磁鐵120朝外的磁極就是N極。一封閉的電磁線圈150設於導磁基板100上。在一較佳實施例中,電磁線圈150儘可能靠近於第一永久磁鐵環110。即在靶材的外緣。電磁線圈150的範圍由靶材的外緣至2/3靶材寬度;冷却銅底板130(冷却水管路未圖示)設於第二永久磁鐵120、第一永久磁鐵環110所包圍的空間內且在電磁線圈150上由一支撐柱(或支撐座)125所支撐。一靶材140設於冷却銅底板130上。支撐柱125的高度與電磁線圈150的高度相當或略高。 3A is a schematic cross-sectional view of a toroidal or magnetron sputtering target according to a first embodiment of the present invention. A magnetically conductive substrate 100 has a closed first permanent magnet ring 110 mounted on the periphery of the magnetically permeable substrate 100. A second permanent magnet 120 is seated in the center of the magnetically permeable substrate. The second permanent magnet 120 may be a magnet strip or a magnet that may be a closed loop. The second permanent magnet 120 and the N pole of the first permanent magnet ring 110 are opposite to each other with respect to the target surface. That is, when the magnetic pole of the first permanent magnet ring 110 facing outward is the N pole, the magnetic pole of the second permanent magnet 120 facing outward is the S pole. On the other hand, when the magnetic pole of the first permanent magnet ring 110 facing outward is the S pole, the magnetic pole of the second permanent magnet 120 facing outward is the N pole. A closed electromagnetic coil 150 is disposed on the magnetic conductive substrate 100. In a preferred embodiment, the electromagnetic coil 150 is as close as possible to the first permanent magnet ring 110. That is, at the outer edge of the target. The electromagnetic coil 150 ranges from the outer edge of the target to the 2/3 target width; the cooling copper bottom plate 130 (the cooling water line is not shown) is disposed in the space surrounded by the second permanent magnet 120 and the first permanent magnet ring 110. And supported by a support column (or support base) 125 on the electromagnetic coil 150. A target 140 is disposed on the cooling copper base plate 130. The height of the support post 125 is comparable to or slightly higher than the height of the electromagnetic coil 150.
圖3B示依據本發明的第一實施例所繪製的俯視圖。圖3B示第一永久磁鐵環110是座於導磁基板100上、然後是電磁線圈150、支撐柱125,在中間的是第二永久磁鐵120,也是一磁鐵環,而冷却銅底板130則是位於支撐柱125上。 Figure 3B shows a top view taken in accordance with a first embodiment of the present invention. FIG. 3B shows that the first permanent magnet ring 110 is seated on the magnetic conductive substrate 100, then the electromagnetic coil 150 and the support post 125. In the middle is the second permanent magnet 120, which is also a magnet ring, and the cooling copper base plate 130 is Located on the support column 125.
本發明中,並不特別限制導磁基板100的形狀,例如,在另一實施例中,如圖3C所示,為方便於同時冷却電磁線圈150及靶材140的冷却銅底板130可以不需要特別設立支撐柱125下,又獲得簡易支撐,可將導磁基板100單位階梯形狀,即中間部位有一較高的平台100’,如圖5所示。第一永久磁鐵環110,座於導磁基板100的外圍上;一第二永久磁鐵120座於該導磁基板平台100’中間。導磁基板平台100’可用以支撐冷却銅底板130。導磁基板平台100’旁擺設電磁線圈150。而導磁基板平台100’ 的下方則設有冷却管路160。 In the present invention, the shape of the magnetic conductive substrate 100 is not particularly limited. For example, in another embodiment, as shown in FIG. 3C, the cooling copper base plate 130 for facilitating simultaneous cooling of the electromagnetic coil 150 and the target 140 may not be required. In particular, under the support column 125, and simple support is obtained, the magnetic conductive substrate 100 can be formed in a stepped shape, that is, the middle portion has a higher platform 100', as shown in FIG. The first permanent magnet ring 110 is seated on the periphery of the magnetic conductive substrate 100; a second permanent magnet 120 is seated in the middle of the magnetic conductive substrate platform 100'. A magnetically permeable substrate platform 100' can be used to support the cooled copper substrate 130. An electromagnetic coil 150 is disposed beside the magnetic substrate platform 100'. And the magnetic substrate platform 100' Below it is provided a cooling line 160.
電磁線圈150由一電源供應器提供電流,(正向及逆向的電流交替變化。本發明利用導入於電磁線圈150的電流周期性變化,配合第一永久磁鐵環110及第二永久磁鐵環110及導磁基板100即可達到移動磁場,進而達成移動電漿團的位置的目的而使得電漿轟擊靶材140時大範圍的移動,進而使靶材平均消耗。 The electromagnetic coil 150 is supplied with current by a power supply. (The forward and reverse currents alternately change. The present invention uses the current introduced into the electromagnetic coil 150 to periodically change, and cooperates with the first permanent magnet ring 110 and the second permanent magnet ring 110 and The magnetically permeable substrate 100 can reach the moving magnetic field, thereby achieving the purpose of moving the position of the plasma regenerator, so that the plasma bombards the target 140 in a wide range of movement, and the target is consumed on average.
利用所導入直流電於磁控濺鍍靶的電磁線圈150,將會改變電漿團170密集位置,請參考圖4A~圖4C。圖示當電流為0、低電流增加至高電流,電漿團170由靶外圈(電磁線圈150所在位置)向靶材中心(遠離電磁線圈150所在位置)靠攏。 Utilizing the imported direct current to the electromagnetic coil 150 of the magnetron sputtering target will change the dense position of the plasma mass 170, please refer to FIG. 4A to FIG. 4C. When the current is 0 and the low current is increased to a high current, the plasma mass 170 is brought closer to the center of the target (the position away from the electromagnetic coil 150) from the target outer ring (the position where the electromagnetic coil 150 is located).
另,以線圈電流=0A(安培)、14A及-14A,線徑2mm之銅質線圈,線圈數230,在上述條件下模擬線圈電流所產生磁力線路徑變化,請參考圖5A(I=0)、圖5B(I=14A)及圖5C(I=-14A)。 In addition, with a coil current = 0A (amperes), 14A and -14A, a copper coil with a wire diameter of 2 mm, the number of coils 230, under the above conditions, the magnetic field path changes caused by the analog coil current, please refer to Figure 5A (I = 0) Figure 5B (I = 14A) and Figure 5C (I = -14A).
當(I=0)時,磁力線各集中於第一永久磁鐵110及第二永久磁鐵120處,如圖5A所示。 When (I = 0), the magnetic lines of force are concentrated at the first permanent magnet 110 and the second permanent magnet 120, as shown in Fig. 5A.
當(I=14A)時,磁力線受線圈影響而壓縮變形集中於第一永久磁鐵110,壓縮方向如圖5B的箭頭175所示(由第一永久磁鐵110朝向靶面及第二永久磁鐵120)。靶面磁力線水平處180(磁場垂直分量B⊥=0)往內側(第二永久磁鐵120所在位置)。 When (I=14A), the magnetic lines of force are affected by the coil and the compression deformation is concentrated on the first permanent magnet 110, and the compression direction is as shown by an arrow 175 in FIG. 5B (the first permanent magnet 110 faces the target surface and the second permanent magnet 120). . The horizontal line of the target magnetic field line 180 (the vertical component of the magnetic field B ⊥ = 0) is on the inner side (the position where the second permanent magnet 120 is located).
當(I=-14A)時,磁力線受線圈影響而壓縮變形集中於第一永久磁鐵110及及第二永久磁鐵120,也產生了一壓縮方向如圖5C的箭頭175所示(由Z形軛鐵100、100’交接處朝向靶面及第一永久磁鐵110)。靶面磁力線水平處180往外側(第一永久磁鐵110所在位置)移動。 When (I=-14A), the magnetic lines of force are affected by the coil and the compression deformation is concentrated on the first permanent magnet 110 and the second permanent magnet 120, and a compression direction is also generated as indicated by an arrow 175 in FIG. 5C (by the Z-shaped yoke) The iron 100, 100' junction faces the target surface and the first permanent magnet 110). The target magnetic field line level 180 moves to the outside (the position where the first permanent magnet 110 is located).
請參考圖6所繪的磁通密度與靶材表面分佈關係圖,90、91、92分別為線圈電流變化0、14A、-14A的模擬曲線。該關係圖係依據圖5的磁力線分佈圖所繪製,圖示顯示磁場垂直分量B⊥=0的區域,因線圈電流變化0、14A、-14A而導引電漿移動的範圍可以長達38.6mm。 Please refer to the relationship between the magnetic flux density and the surface distribution of the target, and 90, 91, and 92 are the simulation curves of coil current changes 0, 14A, and -14A, respectively. The relationship diagram is drawn according to the magnetic field line diagram of FIG. 5. The figure shows the area where the vertical component of the magnetic field B ⊥ = 0, and the range of the guided plasma movement can be as long as 38.6 mm due to the change of the coil current 0, 14A, -14A. .
另為比較本發明所所揭示的陰極結構和Sichmann所揭示的陰極結構的差異性,本發明另以Sichmann所揭示的陰極結構作模擬,圖7所示為Sichmann所揭示的半個陰極結構。圖8A、圖8B及圖8C示線圈電流分別為0、14A、-14A時模擬結果。依據模擬結果,可以求出電漿移動範圍在26.4mm。 In addition, in order to compare the difference between the cathode structure disclosed by the present invention and the cathode structure disclosed by Sichmann, the present invention is additionally simulated by the cathode structure disclosed by Sichmann, and the half cathode structure disclosed by Sichmann is shown in FIG. 8A, 8B, and 8C show simulation results when the coil currents are 0, 14A, and -14A, respectively. According to the simulation results, the plasma movement range can be determined to be 26.4 mm.
表格一係將Sichmann陰極靶和本發明之陰極靶在電漿因電流變化可移動範圍(A)、磁通量(B)及電漿移動效率A/B作一比較。 Table 1 compares the Sichmann cathode target with the cathode target of the present invention in the plasma movable range (A), magnetic flux (B), and plasma moving efficiency A/B.
由上述模擬結果,可知本發明的陰極靶,可達到提高電漿移動範圍及電漿移動效率。 From the above simulation results, it is understood that the cathode target of the present invention can achieve a higher plasma moving range and a plasma moving efficiency.
上述的實施例中,電磁線圈150是座於靶材的邊緣至三分之二靶材寬的範圍。是最佳的實施例。本發明之一次佳的實施例中,電磁線圈150的位置則偏向靶材內側,它將使得磁場B⊥=0的位置同步偏向內側,請參見圖9。換言之,B⊥=0的位置隨電磁線圈所在位置而變化。 In the above embodiment, the electromagnetic coil 150 is in the range of the edge of the target to two-thirds of the target width. It is the best embodiment. In a preferred embodiment of the invention, the position of the electromagnetic coil 150 is biased toward the inside of the target, which will cause the position of the magnetic field B ⊥ = 0 to be shifted inwardly, see FIG. In other words, the position of B ⊥ = 0 varies with the position of the electromagnetic coil.
本發明具有以下的優點: The invention has the following advantages:
(a).只需一圈封閉的電磁線圈,又因電磁線圈封閉於冷却銅板Z形(即前述的單位階梯形狀)導磁基板100,100’,第一永久磁鐵110所產生的容置空間內。因此,冷却銅板既可冷却線圈也可冷却靶材。 (a). Only one closed electromagnetic coil is required, and the electromagnetic coil is enclosed in the Z-shaped (i.e., the unit step shape described above) of the cooling copper plate, and the magnetic conductive substrate 100, 100' is placed in the accommodating space generated by the first permanent magnet 110. Therefore, the cooling copper plate can both cool the coil and cool the target.
(b).習知技術濺鍍機磁場由靶材下方穿越進入腔體,靶材厚度受限,約在1公分以內,以免影響磁場強度。本發明磁場由靶材兩側橫越,散熱良好的平面金屬靶厚度可達3cm。 (b). The magnetic field of the conventional technology sputtering machine passes through the bottom of the target into the cavity, and the thickness of the target is limited to about 1 cm, so as not to affect the magnetic field strength. The magnetic field of the invention is traversed from both sides of the target, and the planar metal target with good heat dissipation can reach a thickness of 3 cm.
(c).相較於Sichmann的習知技術,本發明的電漿移動範圍比習知技術增加35%,也因此,電漿移動效率可提高10%以上,靶材可更均勻消耗,而提高靶材利用率。 (c) Compared with the conventional technique of Sichmann, the plasma moving range of the present invention is increased by 35% compared with the prior art, and therefore, the plasma moving efficiency can be increased by more than 10%, and the target can be more uniformly consumed and improved. Target utilization.
(d).部分習知技術需要磁控機構位移或轉動的機構,本發明不需要這様的機構,要的只是變化線圈電流大小與周期就可達到提高靶材利用率的效果。沒有位移或轉動的機構,使得結構簡單,易於封真空,方便維修。 (d). Some conventional techniques require a mechanism for displacement or rotation of the magnetron mechanism. The present invention does not require such a mechanism, and it is only necessary to vary the coil current magnitude and period to achieve an effect of improving the utilization of the target. The mechanism without displacement or rotation makes the structure simple, easy to seal the vacuum, and convenient for maintenance.
(e).整體結構可適用於磁控濺鍍與電弧離子鍍,而磁場調控對於電弧離子鍍可以提高弧斑在靶面上移動速率與範圍,降低熔滴顆粒的發生。 (e) The overall structure can be applied to magnetron sputtering and arc ion plating, while magnetic field regulation can increase the moving rate and range of the arc spot on the target surface and reduce the occurrence of droplet particles.
以上所述僅為本發明之一較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其他未脫離本發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。 The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included. Within the scope of the patent application.
100‧‧‧導磁基板 100‧‧‧magnetic substrate
110‧‧‧第一永久磁鐵 110‧‧‧First permanent magnet
120‧‧‧第二永久磁鐵 120‧‧‧Second permanent magnet
130‧‧‧冷却銅基板 130‧‧‧Cooled copper substrate
160‧‧‧冷却管路 160‧‧‧Cooling line
140‧‧‧靶材 140‧‧‧ Target
Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103104670A TWI527924B (en) | 2014-02-12 | 2014-02-12 | Magnetron with controllable electromagnetic field |
CN201510070776.5A CN104831246B (en) | 2014-02-12 | 2015-02-11 | Electromagnetic Control Sputtering Cathode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103104670A TWI527924B (en) | 2014-02-12 | 2014-02-12 | Magnetron with controllable electromagnetic field |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201531578A TW201531578A (en) | 2015-08-16 |
TWI527924B true TWI527924B (en) | 2016-04-01 |
Family
ID=53809439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103104670A TWI527924B (en) | 2014-02-12 | 2014-02-12 | Magnetron with controllable electromagnetic field |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN104831246B (en) |
TW (1) | TWI527924B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109504946B (en) * | 2018-12-20 | 2020-12-01 | 兰州空间技术物理研究所 | Angle-adjustable electromagnetic coil for planar rectangular magnetron sputtering cathode |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262028A (en) * | 1992-06-01 | 1993-11-16 | Sierra Applied Sciences, Inc. | Planar magnetron sputtering magnet assembly |
JP4422801B2 (en) * | 1996-12-21 | 2010-02-24 | ジングルス・テヒノロギース・アクチェンゲゼルシャフト | Cathode sputtering equipment |
TWI391514B (en) * | 2009-07-16 | 2013-04-01 | Univ Nat Sun Yat Sen | Magnetron sputter |
TW201120229A (en) * | 2009-12-04 | 2011-06-16 | Ind Tech Res Inst | Structure for increasing utilization rate of target |
-
2014
- 2014-02-12 TW TW103104670A patent/TWI527924B/en active
-
2015
- 2015-02-11 CN CN201510070776.5A patent/CN104831246B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
TW201531578A (en) | 2015-08-16 |
CN104831246A (en) | 2015-08-12 |
CN104831246B (en) | 2017-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8398834B2 (en) | Target utilization improvement for rotatable magnetrons | |
US9580797B2 (en) | Magnetic-field-generating apparatus for magnetron sputtering | |
US20110220494A1 (en) | Methods and apparatus for magnetron metallization for semiconductor fabrication | |
US8673124B2 (en) | Magnet unit and magnetron sputtering apparatus | |
CN110791742A (en) | Magnetic source structure of magnetron sputtering cathode and method for adjusting magnetic field by using magnetic source structure | |
JP2009293089A (en) | Sputtering system | |
TWI607106B (en) | Magnetic field generating device for magnetron sputtering | |
TWI527924B (en) | Magnetron with controllable electromagnetic field | |
US20100213048A1 (en) | Magnetron sputtering cathode, magnetron sputtering apparatus, and method of manufacturing magnetic device | |
CN211112196U (en) | Magnetic source structure of magnetron sputtering cathode | |
TW202100787A (en) | Sputtering apparatus, thin-film forming method | |
US9607813B2 (en) | Magnetic field generation apparatus and sputtering apparatus | |
JP2010248576A (en) | Magnetron sputtering apparatus | |
JP5080294B2 (en) | Ion gun and film forming apparatus | |
CN109371372A (en) | A kind of balancing fields Sputting film-plating apparatus | |
CN111996504A (en) | Ferromagnetic target magnetron sputtering device | |
TWI391514B (en) | Magnetron sputter | |
JP2835462B2 (en) | Sputtering equipment | |
JPH04276069A (en) | Method and device for sputtering | |
CN111996505B (en) | Device for magnetron sputtering ferromagnetic target | |
CN204727942U (en) | A kind of hipims target | |
JP2005068468A (en) | Target for magnetron sputtering, and magnetron sputtering system | |
KR101629131B1 (en) | Arc-type evaporation source | |
CN114086140B (en) | Variable magnetic track type device, vacuum coating equipment and vacuum coating method | |
JP2002069637A (en) | Magnetron sputtering device |