TWI524487B - A fabrication method of a semiconductor chip with substrate via holes and metal bumps - Google Patents

A fabrication method of a semiconductor chip with substrate via holes and metal bumps Download PDF

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Publication number
TWI524487B
TWI524487B TW102107918A TW102107918A TWI524487B TW I524487 B TWI524487 B TW I524487B TW 102107918 A TW102107918 A TW 102107918A TW 102107918 A TW102107918 A TW 102107918A TW I524487 B TWI524487 B TW I524487B
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TW
Taiwan
Prior art keywords
layer
metal
substrate
bump
alloy
Prior art date
Application number
TW102107918A
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Chinese (zh)
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TW201436144A (en
Inventor
花長煌
林志賢
Original Assignee
穩懋半導體股份有限公司
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Priority to TW102107918A priority Critical patent/TWI524487B/en
Priority to US13/968,797 priority patent/US9190374B2/en
Publication of TW201436144A publication Critical patent/TW201436144A/en
Priority to US14/883,135 priority patent/US9704829B2/en
Application granted granted Critical
Publication of TWI524487B publication Critical patent/TWI524487B/en

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Description

結合基板通孔與金屬凸塊之半導體晶片之製程方法 Process for bonding semiconductor wafers with substrate vias and metal bumps

本發明有關一種結合基板通孔與金屬凸塊之半導體晶片結構及其製程方法；運用本發明之結構，可製作覆晶式晶片之堆疊，有助於提高半導體元件之連結密度，縮小晶片尺寸以及增快訊號之傳輸速度。 The invention relates to a semiconductor wafer structure combining a substrate through hole and a metal bump and a manufacturing method thereof; and the structure of the flip chip is fabricated by using the structure of the invention, which helps to improve the connection density of the semiconductor device, reduce the size of the wafer, and Increase the transmission speed of the signal.

半導體元件的製程當中，為縮小半導體晶片之面積，進而發展出覆晶式晶片堆疊之技術。這種晶片堆疊技術通常會使用金屬凸塊之銅柱，來當作覆晶堆疊之上下晶片間之接點，並藉著金屬凸塊之銅柱來導通並傳遞訊號。第1A圖係為一習用技術之具銅柱凸塊半導體晶片之剖面結構示意圖，其中結構依次包含有一基板101、一金屬層103、一金屬凸塊105以及一半導體電子元件113；其中該半導體電子元件113係形成於該基板101之正面；且其中該金屬層103係形成於該基板101之正面，並與該半導體電子元件113接觸；而該金屬凸塊105係形成於該金屬層103之上。第1B圖係為一習用技術之具銅柱凸塊半導體晶片之覆晶式晶片堆疊之剖面結構示意圖，其主要結構與第1A圖所示之實施例大致相同，惟，在該金屬凸塊105之上，堆疊一上層晶片135；而其中該金屬凸塊105係與該上層晶片135相連接，透過該金屬凸塊105，可使該基板101上之該半導體電子元件113之訊號與該上層晶片135相連接；又在該基板101之下，另設置一模組基板 133，於該模組基板133之上，又設一接合打線137，透過該接合打線137將該半導體電子元件113之訊號連接至該模組基板133上。 In the process of semiconductor devices, in order to reduce the area of semiconductor wafers, a technology for flip chip wafer stacking has been developed. This wafer stacking technique typically uses a copper bump of metal bumps to act as a junction between the upper and lower wafers of the flip chip stack and to conduct and transmit signals through the copper bumps of the metal bumps. 1A is a schematic cross-sectional view of a conventional copper bump semiconductor wafer, wherein the structure includes a substrate 101, a metal layer 103, a metal bump 105, and a semiconductor electronic component 113. The semiconductor electronic device The element 113 is formed on the front surface of the substrate 101; and the metal layer 103 is formed on the front surface of the substrate 101 and is in contact with the semiconductor electronic component 113; and the metal bump 105 is formed on the metal layer 103. . 1B is a cross-sectional structural view of a flip-chip wafer stack having a copper pillar bump semiconductor wafer of the prior art, the main structure of which is substantially the same as that of the embodiment shown in FIG. 1A, except that the metal bump 105 is On the top, an upper layer of the wafer 135 is stacked; and the metal bumps 105 are connected to the upper layer 135. The metal bumps 105 are used to transmit the signals of the semiconductor electronic components 113 on the substrate 101 to the upper wafer. 135 phase connection; another under the substrate 101, another module substrate 133. A bonding wire 137 is further disposed on the module substrate 133, and the signal of the semiconductor electronic component 113 is connected to the module substrate 133 through the bonding wire 137.

如此之設計雖可達到3D覆晶式晶片堆疊之效果，然而，在線路的連結密度上之限制依舊很大，因而對縮小晶片尺寸依舊有限，訊號傳輸速度無法再有效提升，也因此整體晶片的耗電量依然偏高。 Although such a design can achieve the effect of 3D flip-chip wafer stacking, however, the limitation on the connection density of the line is still very large, so the size of the reduced chip is still limited, the signal transmission speed can no longer be effectively improved, and thus the overall wafer Power consumption is still high.

有鑑於此，本發明為了改善上述之缺點，本發明提出一種結合基板通孔與凸塊之半導體晶片結構及其製程方法，不但可以提供異質整合，還可提高半導體元件之連結密度，縮小晶片尺寸，增快訊號之傳輸速度，降低晶片之耗電量，並且降低材料成本。 In view of the above, in order to improve the above disadvantages, the present invention provides a semiconductor wafer structure and a method for manufacturing the same, which can provide heterogeneous integration, and can improve the connection density of the semiconductor device and reduce the size of the wafer. Increase the transmission speed of the signal, reduce the power consumption of the chip, and reduce the material cost.

本發明之主要目的在於提供一種結合基板通孔與凸塊之半導體晶片結構及其製程方法，有助於提高半導體元件之連結密度，可大幅縮小晶片尺寸，並增快訊號傳輸速度，而同時又可降低耗電量，且又能提供異質整合。 The main purpose of the present invention is to provide a semiconductor wafer structure and a method for manufacturing the same, which can improve the connection density of the semiconductor device, greatly reduce the size of the wafer, and increase the signal transmission speed, and at the same time Reduces power consumption and provides heterogeneous integration.

為了達到上述之目的，本發明提供之結合基板通孔與金屬凸塊之半導體晶片結構，包括有一基板、至少一基板通孔、至少一背面金屬層、至少一第一金屬層、至少一半導體電子元件以及至少一金屬凸塊；其中該基板通孔係貫穿該基板；其中該背面金屬層係形成於該基板之背面，且該背面金屬層係覆蓋住該基板通孔以及至少覆蓋住部分該基板之背面；其中該第一金屬層，係形成於該基板之正面，且其中至少部分該第一金屬層係於該基板通孔之頂部與該背面金屬層相接觸； 其中該半導體電子元件，係形成於該基板之正面，且部分該第一金屬層係與部分該半導體電子元件相接觸；以及其中該金屬凸塊，係形成於該第一金屬層之上。 In order to achieve the above object, the present invention provides a semiconductor wafer structure for bonding a substrate via and a metal bump, comprising a substrate, at least one substrate via, at least one back metal layer, at least one first metal layer, and at least one semiconductor electron. An element and at least one metal bump; wherein the substrate via is through the substrate; wherein the back metal layer is formed on a back surface of the substrate, and the back metal layer covers the substrate via and covers at least a portion of the substrate a back surface; wherein the first metal layer is formed on a front surface of the substrate, and wherein at least a portion of the first metal layer is in contact with the back metal layer at a top of the substrate via; The semiconductor electronic component is formed on a front surface of the substrate, and a portion of the first metal layer is in contact with a portion of the semiconductor electronic component; and wherein the metal bump is formed on the first metal layer.

於實施時，亦可在上述之結構當中，於該基板之上，更設置一保護層，使該保護層覆蓋住至少部分該基板、該半導體電子元件以及部分該第一金屬層，且該金屬凸塊以及至少部分該第一金屬層不被該保護層所覆蓋。 In the above structure, in the above structure, a protective layer may be further disposed on the substrate, so that the protective layer covers at least a portion of the substrate, the semiconductor electronic component, and a portion of the first metal layer, and the metal The bump and at least a portion of the first metal layer are not covered by the protective layer.

於實施時，亦可在上述之結構當中，介於該金屬凸塊及該第一金屬層之間，更設置至少一重佈線路層，使得該重佈線路層係在該保護層及該第一金屬層之上，且該重佈線路層係在該金屬凸塊之下，又其中該重佈線路層之結構係包括有至少一介電層、至少一介電層通孔以及至少一第二金屬層；其中該介電層，係形成於該保護層及該第一金屬層之上，且該介電層係覆蓋住部分該基板、該保護層以及部分該第一金屬層；其中該介電層通孔，係貫穿該介電層；以及其中該第二金屬層，係形成於該介電層之上，使得該第二金屬層係覆蓋住該介電層通孔以及至少覆蓋住部分該介電層，且其中至少部分該第二金屬層係於該介電層通孔之底部與部分該第一金屬層相接觸，又該金屬凸塊，係形成於該第二金屬層之上。 In implementation, in the above structure, between the metal bump and the first metal layer, at least one redistribution circuit layer is further disposed, so that the redistribution circuit layer is tied to the protective layer and the first Above the metal layer, the redistribution circuit layer is under the metal bump, and wherein the structure of the redistribution circuit layer comprises at least one dielectric layer, at least one dielectric layer via, and at least a second a metal layer; wherein the dielectric layer is formed on the protective layer and the first metal layer, and the dielectric layer covers a portion of the substrate, the protective layer, and a portion of the first metal layer; a via hole extending through the dielectric layer; and wherein the second metal layer is formed over the dielectric layer such that the second metal layer covers the dielectric layer via and covers at least a portion The dielectric layer, and wherein at least a portion of the second metal layer is in contact with a portion of the first metal layer at a bottom of the dielectric layer via, and the metal bump is formed on the second metal layer .

於實施時，前述之該基板之材料係為砷化鎵(GaAs)、碳化矽(SiC)、氮化鎵(GaN)或磷化銦(InP)。 In the implementation, the material of the substrate is GaAs, SiC, GaN or InP.

於實施時，前述之該金屬凸塊之上更鍍上一熔接金屬層，其 中構成該熔接金屬層之材料係為銦、錫、銦合金、錫合金或銦錫合金。 In implementation, the metal bump is further plated with a solder metal layer, The material constituting the welded metal layer is indium, tin, indium alloy, tin alloy or indium tin alloy.

於實施時，前述之該基板厚度係大於10μm小於300μm之間。 In the implementation, the thickness of the substrate is greater than 10 μm and less than 300 μm.

於實施時，前述之該背面金屬層之材料係為金、銅、鈀(Pd)、鎳(Ni)、銀(Ag)、鎳之合金、金銅合金、鎳金合金、鎳鈀合金、鈀金合金、金屬材料或金屬材料之合金。 In the implementation, the material of the back metal layer is gold, copper, palladium (Pd), nickel (Ni), silver (Ag), alloy of nickel, gold-copper alloy, nickel-gold alloy, nickel-palladium alloy, palladium. Alloy, metal or alloy of metal materials.

於實施時，前述之該第一金屬層之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金。 In the implementation, the material of the first metal layer is an alloy of gold, copper, gold-copper alloy, metal material or metal material.

於實施時，前述之該金屬凸塊之材料係為銅、銅合金、金屬材料或金屬材料之合金。 In the implementation, the material of the metal bump described above is an alloy of copper, a copper alloy, a metal material or a metal material.

於實施時，前述之該保護層之材料係為氮化矽(SiN)。 In the implementation, the material of the protective layer is tantalum nitride (SiN).

於實施時，前述之該介電層之材料係為介電物質聚苯噁唑(Polybenzoxazole,PBO)。 In the implementation, the material of the dielectric layer is a dielectric material, polybenzoxazole (PBO).

於實施時，前述之該第二金屬層之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金。 In the implementation, the material of the second metal layer is an alloy of gold, copper, gold-copper alloy, metal material or metal material.

本發明亦提供一種結合基板通孔與金屬凸塊之半導體晶片結構及其製程方法，包括以下步驟：於一基板之正面，形成至少一半導體電子元件；於該基板之正面，形成至少一第一金屬層；其中該部分該第一金屬層係與部分該半導體電子元件相接觸；於該第一金屬層之上，形成至少一金屬凸塊；於該基板正面，形成一防護金屬凸塊層； 其中該防護金屬凸塊層係覆蓋住該基板正面、該半導體電子元件、該第一金屬層以及該金屬凸塊；於該防護金屬凸塊層之上，形成一剝離層；其中該剝離層係覆蓋住該防護金屬凸塊層；於該剝離層之上，附著上一上基板；研磨及拋光該基板之背面；於該基板之背面，以曝光顯影及蝕刻技術製作出至少一基板通孔；其中該基板通孔係貫穿該基板；於該基板之背面鍍上至少一背面金屬層；其中該背面金屬層係覆蓋住該基板通孔以及至少覆蓋住部分該基板之背面，且其中至少部分該第一金屬層係於該基板通孔之頂部與該背面金屬層相接觸；於該基板之背面，真空吸附住一下基板；經加熱之後，使該上基板剝離該剝離層；清除該剝離層以及該防護金屬凸塊層；以及釋放真空吸附，移開該下基板。 The present invention also provides a semiconductor wafer structure for bonding a substrate via and a metal bump, and a method for fabricating the same, comprising the steps of: forming at least one semiconductor electronic component on a front surface of a substrate; forming at least one first on a front surface of the substrate a metal layer; wherein the portion of the first metal layer is in contact with a portion of the semiconductor electronic component; on the first metal layer, at least one metal bump is formed; and a protective metal bump layer is formed on the front surface of the substrate; The protective metal bump layer covers the front surface of the substrate, the semiconductor electronic component, the first metal layer and the metal bump; and a peeling layer is formed on the protective metal bump layer; wherein the peeling layer is Covering the protective metal bump layer; attaching an upper substrate to the peeling layer; grinding and polishing the back surface of the substrate; and forming at least one substrate through hole on the back surface of the substrate by exposure development and etching technology; The substrate through hole is penetrated through the substrate; the back surface of the substrate is plated with at least one back metal layer; wherein the back metal layer covers the substrate through hole and at least covers a portion of the back surface of the substrate, and at least part of the The first metal layer is in contact with the back metal layer on the top of the substrate through hole; on the back surface of the substrate, the substrate is vacuum-adsorbed; after heating, the upper substrate is peeled off the peeling layer; the peeling layer is removed and The protective metal bump layer; and releasing the vacuum adsorption to remove the lower substrate.

於實施時，亦可在上述之結構當中，於該基板正面形成該防護金屬凸塊層之前，先於該基板之上設置一保護層，使該保護層覆蓋住至少部分該基板、該半導體電子元件以及部分該第一金屬層，且該金屬凸塊以及至少部分該第一金屬層不被該保護層所覆蓋；再於該基板正面形成該防護金屬凸塊層，並使該防護金屬凸塊層係覆蓋住該基板正面、該第一金屬層、該保護層以及該金屬凸塊。 In the above structure, before the protective metal bump layer is formed on the front surface of the substrate, a protective layer is disposed on the substrate, so that the protective layer covers at least a portion of the substrate and the semiconductor electron. And the portion of the first metal layer, and the metal bump and at least a portion of the first metal layer are not covered by the protective layer; the protective metal bump layer is formed on the front surface of the substrate, and the protective metal bump is formed The layer covers the front surface of the substrate, the first metal layer, the protective layer, and the metal bump.

於實施時，亦可在上述之結構當中，於該第一金屬層之上形 成該金屬凸塊之前，先於該保護層及該第一金屬層之上設置至少一重佈線路層，其中該重佈線路層之結構係包括有：至少一介電層、至少一介電層通孔以及至少一第二金屬層；其中該介電層，係形成於該保護層及該第一金屬層之上，且該介電層係覆蓋住部分該基板、該保護層以及部分該第一金屬層；其中該介電層通孔，係貫穿該介電層；以及其中該第二金屬層，係形成於該介電層之上，使得該第二金屬層係覆蓋住該介電層通孔以及至少覆蓋住部分該介電層，且其中至少部分該第二金屬層係於該介電層通孔之底部與部分該第一金屬層相接觸；之後再於該第二金屬層之上形成該金屬凸塊；並使該防護金屬凸塊層係覆蓋住該重佈線路層、該第二金屬層、該介電層、該介電層通孔以及該金屬凸塊。 In the implementation, in the above structure, above the first metal layer Before the metal bump is formed, at least one redistribution circuit layer is disposed on the protective layer and the first metal layer, wherein the structure of the redistribution circuit layer comprises: at least one dielectric layer, at least one dielectric layer a via hole and at least a second metal layer; wherein the dielectric layer is formed on the protective layer and the first metal layer, and the dielectric layer covers a portion of the substrate, the protective layer, and a portion of the first a metal layer; wherein the dielectric layer via extends through the dielectric layer; and wherein the second metal layer is formed over the dielectric layer such that the second metal layer covers the dielectric layer The via hole covers at least a portion of the dielectric layer, and at least a portion of the second metal layer is in contact with a portion of the first metal layer at a bottom portion of the dielectric layer via hole; and then the second metal layer Forming the metal bump thereon; and covering the redistribution wiring layer, the second metal layer, the dielectric layer, the dielectric layer via, and the metal bump.

於實施時，前述之該基板之材料係為砷化鎵(GaAs)、碳化矽(SiC)、氮化鎵(GaN)或磷化銦(InP)。 In the implementation, the material of the substrate is GaAs, SiC, GaN or InP.

於實施時，前述之該金屬凸塊之上更鍍上一熔接金屬層，其中構成該熔接金屬層之材料係為銦、錫、銦合金、錫合金或銦錫合金。 In the implementation, the metal bump is further plated with a solder metal layer, wherein the material constituting the solder metal layer is indium, tin, indium alloy, tin alloy or indium tin alloy.

於實施時，前述之該基板厚度係大於10μm小於300μm之間。 In the implementation, the thickness of the substrate is greater than 10 μm and less than 300 μm.

於實施時，前述之該背面金屬層之材料係為金、銅、鈀(Pd)、鎳(Ni)、銀(Ag)、鎳之合金、金銅合金、鎳金合金、鎳鈀合金、鈀金合金、金屬材料或金屬材料之合金。 In the implementation, the material of the back metal layer is gold, copper, palladium (Pd), nickel (Ni), silver (Ag), alloy of nickel, gold-copper alloy, nickel-gold alloy, nickel-palladium alloy, palladium. Alloy, metal or alloy of metal materials.

於實施時，前述之該第一金屬層之材料係為金、銅、金銅合 金、金屬材料或金屬材料之合金。 In the implementation, the material of the first metal layer is gold, copper, gold and copper. An alloy of gold, metal or metal.

於實施時，前述之該金屬凸塊之材料係為銅、銅合金、金屬材料或金屬材料之合金。 In the implementation, the material of the metal bump described above is an alloy of copper, a copper alloy, a metal material or a metal material.

於實施時，前述之該保護層之材料係為氮化矽(SiN)。 In the implementation, the material of the protective layer is tantalum nitride (SiN).

於實施時，前述之該介電層之材料係為介電物質聚苯噁唑(Polybenzoxazole,PBO)。 In the implementation, the material of the dielectric layer is a dielectric material, polybenzoxazole (PBO).

於實施時，前述之該第二金屬層之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金。 In the implementation, the material of the second metal layer is an alloy of gold, copper, gold-copper alloy, metal material or metal material.

於實施時，前述上基板係為藍寶石基板。 In the implementation, the upper substrate is a sapphire substrate.

於實施時，前述下基板係為碳化物基板。 In the implementation, the lower substrate is a carbide substrate.

為進一步了解本發明，以下舉較佳之實施例，配合圖式、圖號，將本發明之具體構成內容及其所達成的功效詳細說明如下。 In order to further understand the present invention, the specific embodiments of the present invention and the effects achieved thereby are described in detail below with reference to the drawings and drawings.

101‧‧‧基板 101‧‧‧Substrate

103‧‧‧金屬層 103‧‧‧metal layer

105‧‧‧金屬凸塊 105‧‧‧Metal bumps

111‧‧‧熔接金屬層 111‧‧‧welded metal layer

113‧‧‧半導體電子元件 113‧‧‧Semiconductor electronic components

133‧‧‧模組基板 133‧‧‧Module substrate

135‧‧‧上層晶片 135‧‧‧Upper wafer

137‧‧‧接合打線 137‧‧‧ Bonding line

201‧‧‧基板 201‧‧‧Substrate

203‧‧‧第一金屬層 203‧‧‧First metal layer

205‧‧‧金屬凸塊 205‧‧‧Metal bumps

207‧‧‧背面金屬層 207‧‧‧Back metal layer

209‧‧‧基板通孔 209‧‧‧Substrate through hole

211‧‧‧熔接金屬層 211‧‧‧welded metal layer

213‧‧‧半導體電子元件 213‧‧‧Semiconductor electronic components

215‧‧‧保護層 215‧‧ ‧ protective layer

217‧‧‧重佈線路層 217‧‧‧Re-distribution layer

219‧‧‧介電層 219‧‧‧ dielectric layer

221‧‧‧介電層通孔 221‧‧‧Dielectric layer through hole

223‧‧‧第二金屬層 223‧‧‧Second metal layer

225‧‧‧防護金屬凸塊層 225‧‧‧Protective metal bump layer

227‧‧‧剝離層 227‧‧‧ peeling layer

229‧‧‧上基板 229‧‧‧Upper substrate

231‧‧‧下基板 231‧‧‧lower substrate

233‧‧‧模組基板 233‧‧‧Module substrate

235‧‧‧上層晶片 235‧‧‧Upper Wafer

237‧‧‧接合打線 237‧‧‧Join line

第1A圖 係為一習用技術之具銅柱凸塊半導體晶片之剖面結構示意圖。 Figure 1A is a schematic cross-sectional view of a conventional copper bump semiconductor wafer.

第1B圖 係為一習用技術之具銅柱凸塊半導體晶片之覆晶式晶片堆疊之剖面結構示意圖。 Figure 1B is a schematic cross-sectional view of a flip-chip wafer stack of a conventional copper bump semiconductor wafer.

第2A圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之剖面結構示意圖。 Fig. 2A is a schematic cross-sectional view showing the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2B圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之又一剖面結構示意圖。 2B is a schematic cross-sectional view showing another structure of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2C-1圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之再一剖面結構示意圖。 Fig. 2C-1 is a schematic cross-sectional view showing the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2C-2圖 係為本發明之結合基板通孔與金屬凸塊之半導體 晶片之又再一剖面結構示意圖。 2C-2 is a semiconductor for bonding through-substrate and metal bump of the present invention A further schematic cross-sectional view of the wafer.

第2D-1圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之又一剖面結構示意圖。 2D-1 is a schematic cross-sectional view showing another structure of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2D-2圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之又再一剖面結構示意圖。 2D-2 is a schematic cross-sectional view showing a semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2A-0圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟1剖面結構示意圖。 2A-0 is a schematic cross-sectional view of a process step 1 of a semiconductor wafer incorporating a substrate via and a metal bump of the present invention.

第2A-1圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟2、3、4剖面結構示意圖。 2A-1 is a schematic cross-sectional view showing the steps 2, 3, and 4 of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2A-2圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟5剖面結構示意圖。 2A-2 is a schematic cross-sectional view showing a process step 5 of a semiconductor wafer for bonding a substrate via and a metal bump of the present invention.

第2A-3圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟6剖面結構示意圖。 2A-3 is a schematic cross-sectional view showing a process step 6 of a semiconductor wafer for bonding a substrate via and a metal bump of the present invention.

第2A-4圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟7剖面結構示意圖。 2A-4 is a schematic cross-sectional view showing a manufacturing process of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2A-5圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟8剖面結構示意圖。 2A-5 is a schematic cross-sectional view showing a process of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第2A-6圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟9剖面結構示意圖。 2A-6 is a schematic cross-sectional view showing a process step 9 of a semiconductor wafer for bonding a substrate via and a metal bump of the present invention.

第2A-7圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟10剖面結構示意圖。 2A-7 is a schematic cross-sectional view showing a process step 10 of a semiconductor wafer for bonding a substrate via and a metal bump of the present invention.

第2B-0圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟A及步驟2、3、4剖面結構示意圖。 2B-0 is a schematic cross-sectional view showing a process step A and steps 2, 3, and 4 of the semiconductor wafer for bonding the substrate via and the metal bump of the present invention.

第2C-1-0圖 係為本發明之結合基板通孔與金屬凸塊之半導 體晶片之製程步驟B及步驟2、3、4剖面結構示意圖。 The second C-1-0 diagram is a semi-conducting of the through-substrate vias and the metal bumps of the present invention. Schematic diagram of the process steps B and steps 2, 3, and 4 of the bulk wafer.

第2C-2-0圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟C、D及步驟2、3、4剖面結構示意圖。 2C-2-0 is a schematic cross-sectional view showing the steps C, D and steps 2, 3 and 4 of the semiconductor wafer for bonding the substrate via and the metal bump of the present invention.

第2D-1-0圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟E、F、G、H及步驟2、3、4剖面結構示意圖。 2D-1-0 is a schematic cross-sectional view of the process steps E, F, G, H and steps 2, 3, and 4 of the semiconductor wafer for bonding the substrate via and the metal bump of the present invention.

第2D-2-0圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之製程步驟E、F、G、H、I及步驟2、3、4剖面結構示意圖。 2D-2-0 is a schematic cross-sectional view showing the steps E, F, G, H, and steps 2, 3, and 4 of the semiconductor wafer for bonding the substrate via and the metal bump of the present invention.

第2E圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之覆晶式晶片堆疊之剖面結構示意圖。 2E is a schematic cross-sectional view showing a flip-chip wafer stack of a semiconductor wafer in which a substrate via and a metal bump are bonded to the present invention.

第2F圖 係為本發明之結合基板通孔與金屬凸塊之半導體晶片之又一覆晶式晶片堆疊之剖面結構示意圖。 FIG. 2F is a schematic cross-sectional view showing a further flip-chip wafer stack of the semiconductor wafer of the substrate through-hole and the metal bump of the present invention.

第3圖係顯示本發明之結合基板通孔與金屬凸塊之半導體晶片結構及其製程方法之流程圖。 3 is a flow chart showing a semiconductor wafer structure of a substrate through-hole and a metal bump of the present invention and a method of manufacturing the same.

第2A圖係為本發明之結合基板通孔與凸塊之半導體晶片之剖面結構示意圖，其中包括一基板201，其中該基板201通常是使用砷化鎵(GaAs)、碳化矽(SiC)、氮化鎵(GaN)或磷化銦(InP)等半導體材料所構成，且該基板201厚度係大於10μm小於300μm之間；於該基板201之正面設置有至少一半導體電子元件213，其中該半導體電子元件213係為場效電晶體(FET)、異質接面雙極性電晶體(HBT)、電阻、電容或電感等各種半導體電子元件之組合；又於該基板201之正面設置有至少一第一金屬層203，其中該第一金屬層203之材料係為金、銅、金銅合金、金屬材料或 金屬材料之合金，該第一金屬層203之厚度係為大於等於3μm，且該第一金屬層203係與部分該半導體電子元件213相接觸；又於該第一金屬層203之上，設置有至少一金屬凸塊205，其中該金屬凸塊205之材料係為銅、銅合金、金屬材料或金屬材料之合金；於該基板201之背面以蝕刻技術蝕刻出至少一基板通孔209，且該基板通孔209係貫穿該基板201；再於該基板201之背面鍍上至少一背面金屬層207，使該背面金屬層207覆蓋住該基板通孔209以及至少覆蓋住部分該基板201之背面，其中該背面金屬層207之材料係為金、銅、鈀(Pd)、鎳(Ni)、銀(Ag)、鎳之合金、金銅合金、鎳金合金、鎳鈀合金、鈀金合金、金屬材料或金屬材料之合金。 2A is a schematic cross-sectional view of a semiconductor wafer incorporating through-substrate vias and bumps of the present invention, including a substrate 201, wherein the substrate 201 is typically gallium arsenide (GaAs), tantalum carbide (SiC), nitrogen. A semiconductor material such as gallium (GaN) or indium phosphide (InP) is formed, and the thickness of the substrate 201 is greater than 10 μm and less than 300 μm; at least one semiconductor electronic component 213 is disposed on the front surface of the substrate 201, wherein the semiconductor electronic The component 213 is a combination of various semiconductor electronic components such as a field effect transistor (FET), a heterojunction bipolar transistor (HBT), a resistor, a capacitor or an inductor; and at least a first metal is disposed on the front surface of the substrate 201. The layer 203, wherein the material of the first metal layer 203 is gold, copper, gold-copper alloy, metal material or An alloy of a metal material, the first metal layer 203 has a thickness of 3 μm or more, and the first metal layer 203 is in contact with a portion of the semiconductor electronic component 213; and above the first metal layer 203, At least one metal bump 205, wherein the material of the metal bump 205 is an alloy of copper, copper alloy, metal material or metal material; at least one substrate via 209 is etched on the back surface of the substrate 201 by etching technology, and The substrate through hole 209 is penetrated through the substrate 201; and at least one back metal layer 207 is plated on the back surface of the substrate 201, so that the back metal layer 207 covers the substrate through hole 209 and covers at least a portion of the back surface of the substrate 201. The material of the back metal layer 207 is gold, copper, palladium (Pd), nickel (Ni), silver (Ag), alloy of nickel, gold-copper alloy, nickel-gold alloy, nickel-palladium alloy, palladium alloy, metal material. Or an alloy of metallic materials.

請參考第2B圖，係為本發明之另一實施例之剖面結構示意圖，其主要結構與第2A圖所示之實施例大致相同，惟，在該金屬凸塊205之上，更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 Please refer to FIG. 2B , which is a cross-sectional structural view of another embodiment of the present invention. The main structure is substantially the same as that of the embodiment shown in FIG. 2A. However, the metal bump 205 is further plated. The metal layer 211 is welded, and the material constituting the fusion metal layer 211 is indium, tin, indium alloy, tin alloy or indium tin alloy.

請參考第2C-1圖，係為本發明之另一實施例之剖面結構示意圖，其主要結構與第2A圖所示之實施例大致相同，惟，在該基板201之上，更設置一保護層215，使該保護層215覆蓋住至少部分該基板201、該半導體電子元件213以及部分該第一金屬層203，且該金屬凸塊205以及至少部分該第一金屬層203不被該保護層215所覆蓋，且其中該保護層215之材料係為氮化矽(SiN)。 Please refer to FIG. 2C-1, which is a cross-sectional structural view of another embodiment of the present invention. The main structure is substantially the same as that of the embodiment shown in FIG. 2A. However, a protection is further provided on the substrate 201. The layer 215 is such that the protective layer 215 covers at least a portion of the substrate 201, the semiconductor electronic component 213, and a portion of the first metal layer 203, and the metal bump 205 and at least a portion of the first metal layer 203 are not protected by the protective layer. Covered by 215, and wherein the material of the protective layer 215 is tantalum nitride (SiN).

請參考第2C-2圖，係為本發明之另一實施例之剖面結構示意圖，其主要結構與第2C-1圖所示之實施例大致相同，惟，在該金屬凸塊205之上，更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 Please refer to FIG. 2C-2, which is a cross-sectional structural view of another embodiment of the present invention. The main structure is substantially the same as that of the embodiment shown in FIG. 2C-1. However, above the metal bump 205, Further, a fusion metal layer 211 is plated, and the material constituting the fusion metal layer 211 is indium, tin, indium alloy, tin alloy or indium tin alloy.

請參考第2D-1圖，係為本發明之另一實施例之剖面結構示意 圖，其主要結構與第2C-1圖所示之實施例大致相同，惟，在介於該金屬凸塊205及該第一金屬層203之間，更設置至少一重佈線路層217，使得該重佈線路層217係在該保護層215及該第一金屬層203之上，且該重佈線路層217係在該金屬凸塊205之下，又其中該重佈線路層217之結構係包括有：至少一介電層219、至少一介電層通孔221以及至少一第二金屬層223，其中該介電層219，係形成於該保護層215及該第一金屬層203之上，且該介電層219係覆蓋住部分該基板201、該保護層215以及部分該第一金屬層203，其中構成該介電層219之材料係為介電物質聚苯噁唑(Polybenzoxazole,PBO)，且該介電層219之厚度為介於5μm與30μm之間；其中該介電層通孔221，係貫穿該介電層219者；且其中第二金屬層223，係形成於該介電層219之上，使得該第二金屬層223係覆蓋住該介電層通孔221以及至少覆蓋住部分該介電層219，且其中至少部分該第二金屬層223係於該介電層通孔221之底部與部分該第一金屬層203相接觸，其中構成該第二金屬層223之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金；又該金屬凸塊205，係形成於該第二金屬層223之上；藉由該重佈線路層217之設計，可以選擇將該金屬凸塊205設置在適當的位置，而電子訊號可經由該背面金屬層207、該第一金屬層203與該半導體電子元件213相連結，並再由該第一金屬層203與該第二金屬層223傳遞至該金屬凸塊205。 Please refer to FIG. 2D-1, which is a cross-sectional structure of another embodiment of the present invention. The main structure is substantially the same as that of the embodiment shown in FIG. 2C-1. However, between the metal bump 205 and the first metal layer 203, at least one redistribution circuit layer 217 is disposed. The redistribution circuit layer 217 is above the protection layer 215 and the first metal layer 203, and the redistribution circuit layer 217 is under the metal bump 205, and wherein the structure of the redistribution circuit layer 217 includes The dielectric layer 219 is formed on the protective layer 215 and the first metal layer 203, and the at least one dielectric layer 219 and the at least one second metal layer 223 are formed on the protective layer 215 and the first metal layer 203. The dielectric layer 219 covers a portion of the substrate 201, the protective layer 215, and a portion of the first metal layer 203. The material constituting the dielectric layer 219 is a dielectric material of polybenzoxazole (PBO). The dielectric layer 219 has a thickness of between 5 μm and 30 μm; wherein the dielectric layer via 221 extends through the dielectric layer 219; and wherein the second metal layer 223 is formed on the dielectric layer Above the layer 219, the second metal layer 223 covers the dielectric layer via 221 and at least covers the portion a dielectric layer 219, and at least a portion of the second metal layer 223 is in contact with a portion of the first metal layer 203 at a bottom portion of the dielectric layer via 221, wherein the material constituting the second metal layer 223 is gold An alloy of copper, gold-copper alloy, metal material or metal material; and the metal bump 205 is formed on the second metal layer 223; by the design of the redistribution circuit layer 217, the metal protrusion can be selected The block 205 is disposed at an appropriate position, and the electronic signal is coupled to the semiconductor electronic component 213 via the back metal layer 207, the first metal layer 203, and the first metal layer 203 and the second metal layer 223. Transfer to the metal bump 205.

請參考第2D-2圖，係為本發明之另一實施例之剖面結構示意圖，其主要結構與第2D-1圖所示之實施例大致相同，惟，在該金屬凸塊205之上，更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 Please refer to FIG. 2D-2, which is a cross-sectional structural diagram of another embodiment of the present invention. The main structure is substantially the same as that of the embodiment shown in FIG. 2D-1. However, above the metal bump 205, Further, a fusion metal layer 211 is plated, and the material constituting the fusion metal layer 211 is indium, tin, indium alloy, tin alloy or indium tin alloy.

第3圖係顯示本發明之結合基板通孔與凸塊之半導體晶片結構及其製程方法之流程圖。如圖所示，以製作如前述第2A圖所示之結合基 板通孔與凸塊之半導體晶片結構為例，其製程方法包括以下步驟：步驟1.請參閱第2A-0圖，於一基板201之正面，形成至少一半導體電子元件213；於該基板201之正面，形成至少一第一金屬層203，且部分該第一金屬層203係與部分該半導體電子元件213相接觸；於該第一金屬層203之上，形成至少一金屬凸塊205；其中該基板201通常是使用砷化鎵(GaAs)、碳化矽(SiC)、氮化鎵(GaN)或磷化銦(InP)等半導體材料所構成，且該基板201厚度係大於10μm小於300μm之間；其中該半導體電子元件213係為場效電晶體(FET)、異質接面雙極性電晶體(HBT)、電阻、電容或電感等各種半導體電子元件之組合；其中該第一金屬層203之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金，該第一金屬層203之厚度係為大於等於3μm；其中該金屬凸塊205之材料係為銅、銅合金、金屬材料或金屬材料之合金；步驟2.請參閱第2A-1圖，於該基板201正面，形成一防護金屬凸塊層225，使該防護金屬凸塊層225係覆蓋住該基板201之正面、該半導體電子元件213、該第一金屬層203以及該金屬凸塊205；步驟3.請參閱第2A-1圖，於該防護金屬凸塊層225之上，形成一剝離層227，使該剝離層227係覆蓋住該防護金屬凸塊層225；步驟4.請參閱第2A-1圖，於該剝離層227之上，附著上一上基板229，其中該上基板229係為藍寶石基板；步驟5.請參閱第2A-2圖，研磨及拋光該基板201之背面；步驟6.請參閱第2A-3圖，於該基板201之背面，以曝光顯影及蝕刻技 術製作出至少一基板通孔209，使該基板通孔209貫穿該基板201；步驟7.請參閱第2A-4圖，於該基板201之背面鍍上至少一背面金屬層207，使該背面金屬層207係覆蓋住該基板通孔209以及至少覆蓋住部分該基板201之背面，且其中至少部分該第一金屬層203係於該基板通孔209之頂部與該背面金屬層207相接觸；其中該背面金屬層207之材料係為金、銅、鈀(Pd)、鎳(Ni)、銀(Ag)、鎳之合金、金銅合金、鎳金合金、鎳鈀合金、鈀金合金、金屬材料或金屬材料之合金；步驟8.請參閱第2A-5圖，於該基板201之背面，真空吸附住一下基板231，其中該下基板231係為碳化物基板；步驟9.請參閱第2A-5圖及第2A-6圖，經加熱之後，使該上基板229剝離該剝離層227；清除該剝離層227以及該防護金屬凸塊層225；以及步驟10.請參閱第2A-6圖及第2A-7圖，釋放真空吸附，移開該下基板231。 3 is a flow chart showing a semiconductor wafer structure of a substrate through-hole and bump of the present invention and a method of manufacturing the same. As shown in the figure, to make a bonding group as shown in the above 2A For example, the semiconductor wafer structure of the board via hole and the bump includes the following steps: Step 1. Referring to FIG. 2A-0, at least one semiconductor electronic component 213 is formed on the front surface of a substrate 201. Forming at least a first metal layer 203, and a portion of the first metal layer 203 is in contact with a portion of the semiconductor electronic component 213; and forming at least one metal bump 205 over the first metal layer 203; The substrate 201 is generally formed of a semiconductor material such as gallium arsenide (GaAs), tantalum carbide (SiC), gallium nitride (GaN) or indium phosphide (InP), and the thickness of the substrate 201 is greater than 10 μm and less than 300 μm. The semiconductor electronic component 213 is a combination of various semiconductor electronic components such as a field effect transistor (FET), a heterojunction bipolar transistor (HBT), a resistor, a capacitor or an inductor; wherein the material of the first metal layer 203 The alloy is made of gold, copper, gold-copper alloy, metal material or metal material. The thickness of the first metal layer 203 is 3 μm or more; wherein the material of the metal bump 205 is copper, copper alloy, metal material or metal. Material combination Gold; Step 2. Referring to FIG. 2A-1, a protective metal bump layer 225 is formed on the front surface of the substrate 201 such that the protective metal bump layer 225 covers the front surface of the substrate 201 and the semiconductor electronic component 213. The first metal layer 203 and the metal bump 205; Step 3. Referring to FIG. 2A-1, a peeling layer 227 is formed on the protective metal bump layer 225, so that the peeling layer 227 is covered. The protective metal bump layer 225; step 4. Please refer to FIG. 2A-1. Above the peeling layer 227, an upper substrate 229 is attached, wherein the upper substrate 229 is a sapphire substrate; 2A-2, grinding and polishing the back surface of the substrate 201; Step 6. Referring to FIG. 2A-3, on the back side of the substrate 201, exposure development and etching techniques At least one substrate through hole 209 is formed to penetrate the substrate through hole 209; Step 7. Referring to FIG. 2A-4, at least one back metal layer 207 is plated on the back surface of the substrate 201 to make the back surface The metal layer 207 covers the substrate via 209 and covers at least a portion of the back surface of the substrate 201, and at least a portion of the first metal layer 203 is in contact with the back metal layer 207 at the top of the substrate via 209; The material of the back metal layer 207 is gold, copper, palladium (Pd), nickel (Ni), silver (Ag), alloy of nickel, gold-copper alloy, nickel-gold alloy, nickel-palladium alloy, palladium alloy, metal material. Or an alloy of a metal material; Step 8. Referring to FIG. 2A-5, on the back surface of the substrate 201, the substrate 231 is vacuum-adsorbed, wherein the lower substrate 231 is a carbide substrate; Step 9. Please refer to Section 2A- 5 and 2A-6, after heating, the upper substrate 229 is peeled off the peeling layer 227; the peeling layer 227 and the protective metal bump layer 225 are removed; and step 10. Please refer to FIG. 2A-6 and 2A-7, the vacuum adsorption is released, and the lower substrate 231 is removed.

欲製作如前述第2B圖所示之結合基板通孔與凸塊之半導體晶片結構，如前述第3圖所示之10步驟之外，尚須於步驟1之後，步驟2之前，需增加以下步驟：步驟A.請參閱第2B-0圖，於該金屬凸塊205之上更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 To fabricate the semiconductor wafer structure of the substrate via and bump as shown in FIG. 2B, as in the 10 steps shown in FIG. 3, it is necessary to add the following steps after step 1 and before step 2. Step A. Referring to FIG. 2B-0, a metal frit 211 is further plated on the metal bump 205, wherein the material constituting the solder metal layer 211 is indium, tin, indium alloy, tin alloy or Indium tin alloy.

欲製作如前述第2C-1圖所示之結合基板通孔與凸塊之半導體晶片結構，如前述第3圖所示之10步驟之外，尚須於步驟1之後，步驟2 之前，需增加以下步驟：步驟B.請參閱第2C-1-0圖，於該基板201之上，更設置一保護層215，使該保護層215覆蓋住至少部分該基板201、該半導體電子元件213以及部分該第一金屬層203，且該金屬凸塊205以及至少部分該第一金屬層203不被該保護層215所覆蓋；其中該保護層215之材料係為氮化矽(SiN)；且其中步驟2.該防護金屬凸塊層225係覆蓋住該基板201正面、該第一金屬層203、該保護層215以及該金屬凸塊205。 To fabricate the semiconductor wafer structure of the substrate via and the bump as shown in the above 2C-1, as in the 10 steps shown in FIG. 3, after step 1, step 2 is required. Previously, the following steps are added: Step B. Referring to FIG. 2C-1-0, a protective layer 215 is further disposed on the substrate 201, so that the protective layer 215 covers at least a portion of the substrate 201 and the semiconductor electron. The element 213 and a portion of the first metal layer 203, and the metal bump 205 and at least a portion of the first metal layer 203 are not covered by the protective layer 215; wherein the material of the protective layer 215 is tantalum nitride (SiN) And wherein the protective metal bump layer 225 covers the front surface of the substrate 201, the first metal layer 203, the protective layer 215, and the metal bump 205.

欲製作如前述第2C-2圖所示之結合基板通孔與凸塊之半導體晶片結構，如前述第3圖所示之10步驟之外，尚須於步驟1之後，步驟2之前，需增加以下步驟：步驟C.請參閱第2C-2-0圖，於該基板201之上，更設置一保護層215，使該保護層215覆蓋住至少部分該基板201、該半導體電子元件213以及部分該第一金屬層203，且該金屬凸塊205以及至少部分該第一金屬層203不被該保護層215所覆蓋；其中該保護層215之材料係為氮化矽(SiN)；步驟D.請參閱第2C-2-0圖，於該金屬凸塊205之上更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 To fabricate the semiconductor wafer structure of the substrate via and the bump as shown in the above 2C-2, as in the 10 steps shown in FIG. 3, it is necessary to add after step 1 and before step 2. The following steps: Step C. Referring to FIG. 2C-2-0, a protective layer 215 is further disposed on the substrate 201, so that the protective layer 215 covers at least a portion of the substrate 201, the semiconductor electronic component 213, and a portion thereof. The first metal layer 203, and the metal bump 205 and at least a portion of the first metal layer 203 are not covered by the protective layer 215; wherein the material of the protective layer 215 is tantalum nitride (SiN); Referring to FIG. 2C-2-0, a metal frit 211 is further plated on the metal bump 205, wherein the material constituting the solder metal layer 211 is indium, tin, indium alloy, tin alloy or indium tin. alloy.

且其中步驟2.該防護金屬凸塊層225係覆蓋住該基板201正面、該第一金屬層203、該保護層215以及該金屬凸塊205。 And wherein the protective metal bump layer 225 covers the front surface of the substrate 201, the first metal layer 203, the protective layer 215, and the metal bump 205.

欲製作如前述第2D-1圖所示之結合基板通孔與凸塊之半導體晶片結構，如前述第3圖所示之10步驟之外，尚須將步驟1修改為以下步驟：步驟E.請參閱第2D-1-0圖，於一基板201之正面，形成至少一半導體電子元件213；於該基板201之正面，形成至少一第一金屬層203，且部分該第一金屬層203係與部分該半導體電子元件213相接觸；步驟F.請參閱第2D-1-0圖，於該基板201之上，更設置一保護層215，使該保護層215覆蓋住至少部分該基板201、該半導體電子元件213以及部分該第一金屬層203，且該金屬凸塊205以及至少部分該第一金屬層203不被該保護層215所覆蓋；其中該保護層215之材料係為氮化矽(SiN)；步驟G.請參閱第2D-1-0圖，於該保護層215以及該第一金屬層203之上，更設置至少一重佈線路層217，其中該重佈線路層217之結構係包括有：至少一介電層219，係形成於該保護層215及該第一金屬層203之上，且該介電層219係覆蓋住部分該基板201、該保護層215以及部分該第一金屬層203；其中構成該介電層219之材料係為介電物質聚苯噁唑(Polybenzoxazole,PBO)，且該介電層219之厚度為介於5μm與30μm之間；至少一介電層通孔221，係貫穿該介電層219；以及至少一第二金屬層223，係形成於該介電層219之上，使得該第 二金屬層223係覆蓋住該介電層通孔221以及至少覆蓋住部分該介電層219，且其中至少部分該第二金屬層223係於該介電層通孔221之底部與部分該第一金屬層203相接觸；其中構成該第二金屬層223之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金；步驟H.請參閱第2D-1-0圖，於該第二金屬層223之上，形成至少一金屬凸塊205；且其中步驟2.該防護金屬凸塊層225係覆蓋住該重佈線路層217、該第二金屬層223、該介電層219、該介電層通孔221以及該金屬凸塊205。 In order to fabricate the semiconductor wafer structure of the substrate via and the bump as shown in the above 2D-1, as in the 10 steps shown in FIG. 3 above, the step 1 must be modified to the following steps: Step E. Referring to FIG. 2D-1-0, at least one semiconductor electronic component 213 is formed on a front surface of a substrate 201. At least a first metal layer 203 is formed on a front surface of the substrate 201, and a portion of the first metal layer 203 is formed. Contacting a portion of the semiconductor electronic component 213; Step F. Referring to FIG. 2D-1-0, a protective layer 215 is further disposed on the substrate 201, so that the protective layer 215 covers at least a portion of the substrate 201, The semiconductor electronic component 213 and a portion of the first metal layer 203, and the metal bump 205 and at least a portion of the first metal layer 203 are not covered by the protective layer 215; wherein the material of the protective layer 215 is tantalum nitride (SiN); Step G. Please refer to FIG. 2D-1-0. On the protective layer 215 and the first metal layer 203, at least one redistribution wiring layer 217 is further disposed, wherein the structure of the redistribution wiring layer 217 The system includes: at least one dielectric layer 219 formed on the protective layer 215 and the first a metal layer 203, and the dielectric layer 219 covers a portion of the substrate 201, the protective layer 215 and a portion of the first metal layer 203; wherein the material constituting the dielectric layer 219 is a dielectric material polyphenylene a polybenzoxazole (PBO), wherein the dielectric layer 219 has a thickness of between 5 μm and 30 μm; at least one dielectric via 221 extends through the dielectric layer 219; and at least a second metal layer 223 Formed on the dielectric layer 219 such that the first a second metal layer 223 covering the dielectric layer via 221 and covering at least a portion of the dielectric layer 219, wherein at least a portion of the second metal layer 223 is attached to a bottom portion and a portion of the dielectric layer via 221 A metal layer 203 is in contact with each other; wherein the material constituting the second metal layer 223 is an alloy of gold, copper, gold-copper alloy, metal material or metal material; and step H. Please refer to FIG. 2D-1-0, Above the two metal layers 223, at least one metal bump 205 is formed; and wherein the protective metal bump layer 225 covers the redistribution wiring layer 217, the second metal layer 223, the dielectric layer 219, The dielectric layer via 221 and the metal bump 205.

欲製作如前述第2D-2圖所示之結合基板通孔與凸塊之半導體晶片結構，其步驟如前述製作第2D-1圖之結構，除了需修改第3圖所示之10步驟中之步驟1成為步驟E、步驟F、步驟G、步驟H之外，尚須於步驟H之後，步驟2之前，增加以下步驟：步驟I.請參閱第2D-2-0圖，於該金屬凸塊205之上更鍍上一熔接金屬層211，其中構成該熔接金屬層211之材料係為銦、錫、銦合金、錫合金或銦錫合金。 To fabricate a semiconductor wafer structure for bonding through-substrate vias and bumps as shown in the above 2D-2, the steps of fabricating the structure of FIG. 2D-1 are as described above, except that the 10 steps shown in FIG. 3 need to be modified. Step 1 becomes step E, step F, step G, and step H. After step H, before step 2, the following steps are added: step I. Please refer to figure 2D-2-0 for the metal bump. A fused metal layer 211 is further plated on the 205, wherein the material constituting the fused metal layer 211 is indium, tin, indium alloy, tin alloy or indium tin alloy.

第2E圖係為本發明之結合基板通孔與凸塊之半導體晶片之覆晶式晶片堆疊之剖面結構示意圖，其主要結構與第2C-1圖以及所示之實施例大致相同，惟，於該金屬凸塊205之上焊接一上層晶片235，而其中該金屬凸塊205係與該上層晶片235相連接，且其中該上層晶片235包含有其他的半導體電子元件；電子訊號可經由該背面金屬層207、該第一 金屬層203與該半導體電子元件213相連結，並再由該第一金屬層203傳遞至該金屬凸塊205，接著再透過該金屬凸塊205將電子訊號傳遞至該上層晶片235所包含的半導體電子元件；又於該背面金屬層207之下，設置一模組基板233，於該模組基板233之上，又設至少一接合打線237，透過該接合打線237可將該半導體電子元件213之訊號連接至該模組基板233上。 2E is a cross-sectional structural view of a flip-chip wafer stack of a semiconductor wafer incorporating a substrate via and a bump, and the main structure thereof is substantially the same as that of the embodiment 2C-1 and the illustrated embodiment, but An upper wafer 235 is soldered over the metal bump 205, wherein the metal bump 205 is connected to the upper wafer 235, and wherein the upper wafer 235 includes other semiconductor electronic components; the electronic signal can pass through the back metal Layer 207, the first The metal layer 203 is coupled to the semiconductor electronic component 213, and then transferred to the metal bump 205 by the first metal layer 203, and then the electronic signal is transmitted through the metal bump 205 to the semiconductor included in the upper wafer 235. An electronic component is disposed under the back metal layer 207, and a module substrate 233 is disposed on the module substrate 233. At least one bonding wire 237 is disposed on the module substrate 233. The semiconductor electronic component 213 can be disposed through the bonding wire 237. The signal is connected to the module substrate 233.

第2F圖係為本發明之結合基板通孔與凸塊之半導體晶片之覆晶式晶片堆疊之剖面結構示意圖，其主要結構與第2D-1圖以及所示之實施例大致相同，惟，於該金屬凸塊205之上焊接一上層晶片235，而其中該金屬凸塊205係與該上層晶片235相連接，且其中該上層晶片235包含有其他的半導體電子元件；藉由該重佈線路層217之設計，可以選擇將該金屬凸塊205設置在適當的位置，搭配該上層晶片235與該金屬凸塊205相對應之焊接點；而電子訊號可經由該背面金屬層207、該第一金屬層203與該半導體電子元件213相連結，並再由該第一金屬層203與該第二金屬層223傳遞至該金屬凸塊205，接著再透過該金屬凸塊205將電子訊號傳輸至該上層晶片235所包含的半導體電子元件；又於該背面金屬層207之下，設置一模組基板233，於該模組基板233之上，又設至少一接合打線237，透過該接合打線237可將該半導體電子元件213之訊號連接至該模組基板233上。 2F is a schematic cross-sectional structural view of a flip-chip wafer stack of a semiconductor wafer incorporating a substrate via and a bump, and the main structure thereof is substantially the same as that of the second D-1 and the illustrated embodiment, but An upper layer wafer 235 is soldered over the metal bump 205, wherein the metal bump 205 is connected to the upper layer wafer 235, and wherein the upper layer wafer 235 includes other semiconductor electronic components; The design of the 217 may be such that the metal bump 205 is disposed at an appropriate position to match the soldering point of the upper wafer 235 corresponding to the metal bump 205; and the electronic signal can pass through the back metal layer 207, the first metal The layer 203 is coupled to the semiconductor electronic component 213, and then transferred to the metal bump 205 by the first metal layer 203 and the second metal layer 223, and then the electronic signal is transmitted to the upper layer through the metal bump 205. a semiconductor electronic component included in the chip 235; a module substrate 233 is disposed under the back metal layer 207, and at least one bonding wire 237 is disposed on the module substrate 233. 237 may be connected to the module substrate 233 on the signal 213 of semiconductor electronic components.

綜上所述，本發明透過運用本發明之結合基板通孔與凸塊之半導體晶片結構及其製程方法，有助於提高半導體元件之連結密度，可大幅縮小晶片尺寸，並增快訊號傳輸速度，而同時又可降低耗電量，且又能提供異質整合，因此本發明確實可達到預期之目的，並具有良好製程穩定性及元件可靠度等優點。其確具產業利用之價值，爰依法提出專利申請。 In summary, the present invention can improve the connection density of semiconductor components by using the semiconductor wafer structure of the substrate through-hole and bump of the present invention and the manufacturing method thereof, thereby greatly reducing the chip size and increasing the signal transmission speed. At the same time, the power consumption can be reduced, and heterogeneous integration can be provided. Therefore, the present invention can achieve the intended purpose, and has the advantages of good process stability and component reliability. It does have the value of industrial use, and patent applications are filed according to law.

又上述說明與圖式僅是用以說明本發明之實施例，凡熟於此業技藝之人士，仍可做等效的局部變化與修飾，其並未脫離本發明之技術與精神。 The above description and drawings are merely illustrative of the embodiments of the present invention, and those of ordinary skill in the art can

201‧‧‧基板 201‧‧‧Substrate

203‧‧‧第一金屬層 203‧‧‧First metal layer

205‧‧‧金屬凸塊 205‧‧‧Metal bumps

207‧‧‧背面金屬層 207‧‧‧Back metal layer

209‧‧‧基板通孔 209‧‧‧Substrate through hole

213‧‧‧半導體電子元件 213‧‧‧Semiconductor electronic components

Claims (14)

一種結合基板通孔與金屬凸塊之半導體晶片之製程方法，包括以下步驟：於一基板之正面，形成至少一半導體電子元件；於該基板之正面，形成至少一第一金屬層，且部分該第一金屬層係與部分該半導體電子元件相接觸；於該第一金屬層之上，形成至少一金屬凸塊；於該基板正面，形成一防護金屬凸塊層，使該防護金屬凸塊層係覆蓋住該基板正面、該半導體電子元件、該第一金屬層以及該金屬凸塊；於該防護金屬凸塊層之上，形成一剝離層，使該剝離層係覆蓋住該防護金屬凸塊層；於該剝離層之上，附著上一上基板；研磨及拋光該基板之背面；於該基板之背面，以曝光顯影及蝕刻技術製作出至少一基板通孔，使該基板通孔貫穿該基板；於該基板之背面鍍上至少一背面金屬層，使該背面金屬層係覆蓋住該基板通孔以及至少覆蓋住部分該基板之背面，且其中至少部分該第一金屬層係於該基板通孔之頂部與該背面金屬層相接觸；於該基板之背面，真空吸附住一下基板；經加熱之後，使該上基板剝離該剝離層；清除該剝離層以及該防護金屬凸塊層；以及釋放真空吸附，移開該下基板。 A method for fabricating a semiconductor wafer with a substrate via and a metal bump, comprising the steps of: forming at least one semiconductor electronic component on a front surface of a substrate; forming at least a first metal layer on a front surface of the substrate, and partially The first metal layer is in contact with a portion of the semiconductor electronic component; at least one metal bump is formed on the first metal layer; and a protective metal bump layer is formed on the front surface of the substrate to make the protective metal bump layer Covering the front surface of the substrate, the semiconductor electronic component, the first metal layer and the metal bump; forming a peeling layer on the protective metal bump layer, so that the peeling layer covers the protective metal bump a layer; an upper substrate is attached to the peeling layer; a back surface of the substrate is polished and polished; and at least one substrate through hole is formed on the back surface of the substrate by exposure development and etching technology, so that the substrate through hole penetrates through the substrate a substrate; at least one back metal layer is plated on the back surface of the substrate, such that the back metal layer covers the substrate through hole and at least covers a portion of the back surface of the substrate; At least a portion of the first metal layer is in contact with the back metal layer at the top of the substrate via; on the back side of the substrate, the substrate is vacuum-adsorbed; after heating, the upper substrate is peeled off the peeling layer; The peeling layer and the protective metal bump layer; and releasing vacuum adsorption to remove the lower substrate. 如申請專利範圍第1項所述之製程方法，進一步包括以下步驟： 於該基板正面形成該防護金屬凸塊層之前，先於該基板之上設置一保護層，使該保護層覆蓋住至少部分該基板、該半導體電子元件以及部分該第一金屬層，且該金屬凸塊以及至少部分該第一金屬層不被該保護層所覆蓋；再於該基板正面形成該防護金屬凸塊層，並使該防護金屬凸塊層係覆蓋住該基板正面、該第一金屬層、該保護層以及該金屬凸塊。 The method of processing described in claim 1 further includes the following steps: Before forming the protective metal bump layer on the front surface of the substrate, a protective layer is disposed on the substrate, so that the protective layer covers at least a portion of the substrate, the semiconductor electronic component, and a portion of the first metal layer, and the metal The bump and at least a portion of the first metal layer are not covered by the protective layer; the protective metal bump layer is formed on the front surface of the substrate, and the protective metal bump layer covers the front surface of the substrate, the first metal a layer, the protective layer, and the metal bump. 如申請專利範圍第2項所述之製程方法，其中構成該保護層之材料係為氮化矽(SiN)。 The process according to claim 2, wherein the material constituting the protective layer is tantalum nitride (SiN). 如申請專利範圍第2項所述之製程方法，進一步包括以下步驟：於該第一金屬層之上形成該金屬凸塊之前，先於該保護層及該第一金屬層之上設置至少一重佈線路層，其中該重佈線路層之結構係包括有：至少一介電層，係形成於該保護層及該第一金屬層之上，且該介電層係覆蓋住部分該基板、該保護層以及部分該第一金屬層者；至少一介電層通孔，係貫穿該介電層者；以及至少一第二金屬層，係形成於該介電層之上，使得該第二金屬層係覆蓋住該介電層通孔以及至少覆蓋住部分該介電層，且其中至少部分該第二金屬層係於該介電層通孔之底部與部分該第一金屬層相接觸；之後再於該第二金屬層之上形成該金屬凸塊；並使該防護金屬凸塊層覆蓋住該重佈線路層、該第二金屬層、該介電層、該介電層通孔以及該金屬凸塊。 The method of claim 2, further comprising the step of: providing at least one rewiring before the protective layer and the first metal layer before forming the metal bump on the first metal layer The circuit layer, wherein the structure of the redistribution circuit layer comprises: at least one dielectric layer formed on the protective layer and the first metal layer, and the dielectric layer covers part of the substrate, the protection a layer and a portion of the first metal layer; at least one dielectric layer via extending through the dielectric layer; and at least a second metal layer formed over the dielectric layer such that the second metal layer Covering the dielectric layer via and covering at least a portion of the dielectric layer, and wherein at least a portion of the second metal layer is in contact with a portion of the first metal layer at a bottom of the dielectric layer via; Forming the metal bump on the second metal layer; and covering the redistribution wiring layer, the second metal layer, the dielectric layer, the dielectric layer via hole, and the metal Bump. 如申請專利範圍第4項所述之製程方法，其中構成該介電層之材料係為介電物質聚苯噁唑(Polybenzoxazole,PBO)。 The process of claim 4, wherein the material constituting the dielectric layer is a dielectric material, polybenzoxazole (PBO). 如申請專利範圍第4項所述之製程方法，其中構成該第二金屬層之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金者。 The process of claim 4, wherein the material constituting the second metal layer is an alloy of gold, copper, gold-copper alloy, metal material or metal material. 如申請專利範圍第1項所述之製程方法，其中構成該基板之材料係為砷化鎵(GaAs)、碳化矽(SiC)、氮化鎵(GaN)或磷化銦(InP)。 The process according to claim 1, wherein the material constituting the substrate is gallium arsenide (GaAs), tantalum carbide (SiC), gallium nitride (GaN) or indium phosphide (InP). 如申請專利範圍第1項所述之製程方法，於該金屬凸塊之上更鍍上一熔接金屬層，其中構成該熔接金屬層之材料係為銦、錫、銦合金、錫合金或銦錫合金。 The method of claim 1, wherein the metal bump is further plated with a solder metal layer, wherein the material constituting the solder metal layer is indium, tin, indium alloy, tin alloy or indium tin. alloy. 如申請專利範圍第1項所述之製程方法，其中該基板厚度係大於10μm小於300μm之間。 The process of claim 1, wherein the substrate thickness is greater than 10 μm and less than 300 μm. 如申請專利範圍第1項所述之製程方法，其中構成該背面金屬層之材料係為金、銅、鈀(Pd)、鎳(Ni)、銀(Ag)、鎳之合金、金銅合金、鎳金合金、鎳鈀合金、鈀金合金、金屬材料或金屬材料之合金者。 The process of claim 1, wherein the material constituting the back metal layer is gold, copper, palladium (Pd), nickel (Ni), silver (Ag), alloy of nickel, gold-copper alloy, nickel. Gold alloy, nickel-palladium alloy, palladium-gold alloy, metal material or alloy of metal materials. 如申請專利範圍第1項所述之製程方法，其中構成該第一金屬層之材料係為金、銅、金銅合金、金屬材料或金屬材料之合金者。 The process of claim 1, wherein the material constituting the first metal layer is an alloy of gold, copper, gold-copper alloy, metal material or metal material. 如申請專利範圍第1項所述之製程方法，其中構成該金屬凸塊之材料係為銅、銅合金、金屬材料或金屬材料之合金者。 The process of claim 1, wherein the material constituting the metal bump is an alloy of copper, a copper alloy, a metal material or a metal material. 如申請專利範圍第1項所述之製程方法，其中該上基板係為藍寶石基板。 The process of claim 1, wherein the upper substrate is a sapphire substrate. 如申請專利範圍第1項所述之製程方法，其中該下基板係為碳化物基板。 The process of claim 1, wherein the lower substrate is a carbide substrate.
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