TWI523161B

TWI523161B - Applications of liquid glass

Info

Publication number: TWI523161B
Application number: TW102132163A
Authority: TW
Inventors: 張于純
Original assignee: 張于純
Priority date: 2013-09-06
Filing date: 2013-09-06
Publication date: 2016-02-21
Also published as: TW201511193A

Description

液態玻璃之應用 Application of liquid glass

本發明係有關於一種液態玻璃之應用，尤指一種液態玻璃之應用。 The invention relates to the use of a liquid glass, in particular to the application of a liquid glass.

隨著半導體製程技術的進步，已經有愈來愈多的電子產品應用到半導體製程。 With the advancement of semiconductor process technology, more and more electronic products have been applied to semiconductor processes.

惟，傳統的半導體製程僅能使用半導體材料來做為介電層與絕緣層，而傳統的半導體材料多必須在昂貴設備中的高度真空與高溫環境下形成，且多數半導體材料的透光度不佳，使得在實際應用上受到許多限制。 However, traditional semiconductor processes can only use semiconductor materials as dielectric layers and insulating layers. Traditional semiconductor materials must be formed in high vacuum and high temperature environments in expensive equipment, and the transmittance of most semiconductor materials is not. Good, so there are many restrictions in practical applications.

雖然後來有以玻璃基板取代半導體基板之改良方式，但是要在玻璃基板上形成孔洞、凹槽或通孔均有一定的困難度、不環保(例如使用高毒性的氫氟酸)且有許多形狀上的限制。 Although there is an improved way of replacing the semiconductor substrate with a glass substrate, it is difficult to form holes, grooves or through holes in the glass substrate, which is not environmentally friendly (for example, using highly toxic hydrofluoric acid) and has many shapes. The upper limit.

因此，如何避免上述習知技術中之種種問題，並有效運用無須應用高溫製程、無須使用昂貴設備、透光度較佳且應用範圍較廣之玻璃材料，實已成為目前亟欲解決的課題。 Therefore, how to avoid various problems in the above-mentioned prior art, and effectively use glass materials that do not need to use a high-temperature process, do not need to use expensive equipment, have better light transmittance, and have a wide application range, have become a problem to be solved at present.

有鑒於上述習知技術之缺失，本發明提供一種基板之製法，係包括：於一承載板上形成複數導電柱；於該承載板上敷設包覆該等導電柱的液態玻璃層，且該液態玻璃層之頂面齊平於該等導電柱之頂端；在50至100℃間進行烘烤；照射紫外光；以及移除該承載板。 In view of the above-mentioned deficiencies of the prior art, the present invention provides a method for manufacturing a substrate, comprising: forming a plurality of conductive columns on a carrier plate; laying a liquid glass layer covering the conductive columns on the carrier plate, and the liquid The top surface of the glass layer is flush with the top end of the conductive pillars; baked at 50 to 100 ° C; irradiates ultraviolet light; and the carrier plate is removed.

本發明提供一種基板，係包括：厚度係為2至25微米的玻璃基材；以及貫穿該玻璃基材之兩表面的複數導電柱。 The present invention provides a substrate comprising: a glass substrate having a thickness of 2 to 25 microns; and a plurality of conductive columns penetrating both surfaces of the glass substrate.

本發明提供一種基板，係包括：聚亞醯胺基材，其厚度係為2至100微米；以及複數導電柱，係貫穿該聚亞醯胺基材之兩表面。 The present invention provides a substrate comprising: a polyimide substrate having a thickness of 2 to 100 microns; and a plurality of conductive pillars extending through both surfaces of the polyimide substrate.

本發明提供一種嵌埋有線路的基板之製法，係包括：於一承載板上形成線路增層結構，該線路增層結構係由至少一交互堆疊之線路層與玻璃層所構成，其中，該玻璃層之形成係依序敷設液態玻璃層、在50至100℃間進行烘烤及照射紫外光；以及移除該承載板。 The invention provides a method for manufacturing a substrate embedded with a line, comprising: forming a line build-up structure on a carrier board, wherein the line build-up structure is formed by at least one alternately stacked circuit layer and a glass layer, wherein The glass layer is formed by sequentially applying a liquid glass layer, baking at 50 to 100 ° C and irradiating ultraviolet light, and removing the carrier sheet.

本發明提供一種嵌埋有線路的基板，係包括：由至少一交互堆疊之線路層與玻璃層所構成的線路增層結構，各該玻璃層之厚度係為2至25微米。 The present invention provides a substrate embedded with a line, comprising: a line build-up structure composed of at least one alternately stacked circuit layer and a glass layer, each of the glass layers having a thickness of 2 to 25 microns.

本發明提供一種玻璃膜之製法，係包括：於一承載膜上敷設液態玻璃層；在50至100℃間進行烘烤；於該液態玻璃層之表面壓印出凹凸圖案，並照射紫外光；以及移除該承載膜。 The invention provides a method for preparing a glass film, comprising: laying a liquid glass layer on a carrier film; baking at 50 to 100 ° C; embossing a concave and convex pattern on the surface of the liquid glass layer, and irradiating ultraviolet light; And removing the carrier film.

本發明提供一種玻璃膜，係包括：一表面具有規則或不規則的凹凸圖案的玻璃板，該玻璃板之厚度係為2至25 微米。 The invention provides a glass film comprising: a glass plate having a regular or irregular concave and convex pattern on the surface, the glass plate having a thickness of 2 to 25 Micron.

由上可知，因為本發明係應用感光型液態玻璃，其操作步驟簡單、操作溫度較低、操作環境為一般大氣環境、無須昂貴設備且透光度佳，又感光型液態玻璃在成形上比較沒有形狀上的限制，故可大幅節省成本與擴大應用面。 As can be seen from the above, since the present invention is applied to photosensitive liquid glass, the operation steps are simple, the operating temperature is low, the operating environment is a general atmospheric environment, no expensive equipment is required, and the light transmittance is good, and the photosensitive liquid glass is not formed in the forming. The shape is limited, so it can save a lot of cost and expand the application.

10、20‧‧‧承載板 10, 20‧‧‧ carrier board

11‧‧‧金屬箔 11‧‧‧metal foil

11’‧‧‧第二線路層 11’‧‧‧Second circuit layer

12‧‧‧第一阻層 12‧‧‧First resistance layer

120‧‧‧第一阻層開孔 120‧‧‧First barrier opening

13‧‧‧導電柱 13‧‧‧conductive column

14、31‧‧‧液態玻璃層 14, 31‧‧‧ liquid glass layer

14’‧‧‧玻璃基材 14'‧‧‧ glass substrate

15‧‧‧導電層 15‧‧‧ Conductive layer

16‧‧‧第二阻層 16‧‧‧second barrier layer

160‧‧‧第二阻層開孔 160‧‧‧Second barrier opening

17‧‧‧第一線路層 17‧‧‧First circuit layer

21‧‧‧線路增層結構 21‧‧‧Line layering structure

211‧‧‧線路層 211‧‧‧Line layer

212‧‧‧玻璃層 212‧‧‧ glass layer

30‧‧‧承載膜 30‧‧‧ carrying film

31’‧‧‧玻璃板 31'‧‧‧ glass plate

32‧‧‧滾輪 32‧‧‧Roller

311‧‧‧凹凸圖案 311‧‧‧ concave pattern

第1A至1J圖所示者係本發明之基板及其製法的剖視圖；第2A至2C圖所示者係本發明之嵌埋有線路的基板及其製法的剖視圖；以及第3A至3D圖所示者係本發明之嵌埋有線路的基板及其製法的剖視圖。 1A to 1J are cross-sectional views showing a substrate of the present invention and a method of manufacturing the same, and FIGS. 2A to 2C are cross-sectional views showing a substrate embedded with a circuit of the present invention and a method of manufacturing the same; and FIGS. 3A to 3D; The present invention is a cross-sectional view of a substrate embedded with a circuit of the present invention and a method of manufacturing the same.

以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如「上」、「頂」、「齊平」、「側」、「周緣」、「凹凸」及「一」等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. At the same time, the references in this manual are "upper", "top", "flat", "side", "circumference", "bump" And the terms "a" and "the" are used to describe the scope of the invention, and the relative relationship may be changed or adjusted. The scope of implementation.

第一實施例 First embodiment

第1A至1J圖所示者，係本發明之基板及其製法的剖視圖。 1A to 1J are cross-sectional views of the substrate of the present invention and a method of manufacturing the same.

如第1A圖所示，於一承載板10上形成金屬箔11。 As shown in FIG. 1A, a metal foil 11 is formed on a carrier sheet 10.

如第1B圖所示，於該金屬箔11上形成具有複數第一阻層開孔120的第一阻層12。 As shown in FIG. 1B, a first resist layer 12 having a plurality of first resistive opening 120 is formed on the metal foil 11.

如第1C圖所示，於各該第一阻層開孔120中電鍍或沈積(例如：濺鍍、蒸鍍、金屬膏……等等)形成導電柱13，該導電柱13的側壁與該導電柱13周緣的承載板10(或金屬箔11)間之夾角係為85至90°，即該導電柱13的側壁的垂直度甚佳。 As shown in FIG. 1C, a conductive pillar 13 is formed by electroplating or deposition (for example, sputtering, evaporation, metal paste, etc.) in each of the first barrier opening 120, and the sidewall of the conductive pillar 13 is The angle between the carrier 10 (or the metal foil 11) at the periphery of the conductive post 13 is 85 to 90, that is, the verticality of the side wall of the conductive post 13 is excellent.

如第1D圖所示，移除該第一阻層12。 The first resist layer 12 is removed as shown in FIG. 1D.

如第1E圖所示，於該金屬箔11上敷設包覆該等導電柱13的液態玻璃層14，該液態玻璃層14之厚度係為2至25微米，且該液態玻璃層14之頂面齊平於該等導電柱13之頂端，並在50至100℃間進行烘烤，烘烤的溫度係較佳為70至95℃，最佳為85℃，烘烤的時間係為3至55分鐘，再照射紫外光，使該液態玻璃層14固化成玻璃基材14’。 As shown in FIG. 1E, a liquid glass layer 14 covering the conductive pillars 13 is applied to the metal foil 11, and the liquid glass layer 14 has a thickness of 2 to 25 micrometers, and the top surface of the liquid glass layer 14 is as shown in FIG. Flush at the top of the conductive pillars 13 and bake at 50 to 100 ° C. The baking temperature is preferably 70 to 95 ° C, preferably 85 ° C, and the baking time is 3 to 55. In a minute, the ultraviolet light is again irradiated to cure the liquid glass layer 14 into a glass substrate 14'.

如第1F圖所示，於該玻璃基材14’之頂面與該等導電柱13之頂端上形成導電層15。 As shown in Fig. 1F, the top surface of the glass substrate 14' and the conductive A conductive layer 15 is formed on the top end of the pillar 13.

如第1G圖所示，於該導電層15上形成具有複數第二阻層開孔160的第二阻層16。 As shown in FIG. 1G, a second resist layer 16 having a plurality of second resist opening 160 is formed on the conductive layer 15.

如第1H圖所示，於各該第二阻層開孔160中形成電性連接該導電柱13的第一線路層17。 As shown in FIG. 1H, a first wiring layer 17 electrically connected to the conductive pillars 13 is formed in each of the second barrier opening 160.

如第1I圖所示，移除該第二阻層16及其所覆蓋的導電層15。 As shown in FIG. 1I, the second resist layer 16 and the conductive layer 15 covered thereby are removed.

如第1J圖所示，移除該承載板10，並將該金屬箔11圖案化成為電性連接該導電柱13的第二線路層11’。 As shown in Fig. 1J, the carrier 10 is removed and the metal foil 11 is patterned into a second wiring layer 11' electrically connected to the conductive pillars 13.

要補充說明的是，本實施例之金屬箔11、第一阻層12、導電層15與第二阻層16係視需要而設置，並非必要之構件。 It should be noted that the metal foil 11, the first resist layer 12, the conductive layer 15 and the second resist layer 16 of the present embodiment are provided as needed, and are not essential components.

本發明復提供一種基板，係包括：玻璃基材14’，其厚度係為2至25微米；以及複數導電柱13，係貫穿該玻璃基材14’之兩表面。 The present invention provides a substrate comprising: a glass substrate 14' having a thickness of 2 to 25 microns; and a plurality of conductive pillars 13 extending through both surfaces of the glass substrate 14'.

於前述之基板中，該導電柱13的側壁與玻璃基材14’的表面間之夾角係為85至95°。 In the foregoing substrate, the angle between the side wall of the conductive post 13 and the surface of the glass substrate 14' is 85 to 95°.

要補充說明的是，本實施例之基板可為中介板(interposer)，且本實施例之玻璃基材14’亦可改用聚亞醯胺(polyimide)基材取代之，其厚度係為2至100微米，較佳為2至25微米，該聚亞醯胺基材之其他特徵係相同於該玻璃基材14’，故不在此贅述。 It should be noted that the substrate of the embodiment may be an interposer, and the glass substrate 14 ′ of the embodiment may be replaced by a polyimide substrate, and the thickness thereof is 2 Up to 100 microns, preferably 2 to 25 microns, other features of the polyimide substrate are identical to the glass substrate 14' and are not described herein.

第二實施例 Second embodiment

第2A至2C圖所示者，係本發明之嵌埋有線路的基板及其製法的剖視圖。 2A to 2C are cross-sectional views showing a substrate embedded with a circuit of the present invention and a method of manufacturing the same.

如第2A圖所示，提供一承載板20。 As shown in Fig. 2A, a carrier plate 20 is provided.

如第2B圖所示，於該承載板20上形成線路增層結構21，該線路增層結構21係由至少一交互堆疊之線路層211與玻璃層212所構成，其中，該玻璃層212之形成係依序敷設液態玻璃層、在50至100℃間進行烘烤及照射紫外光，烘烤的溫度係較佳為70℃至95℃，最佳為85℃，烘烤的時間係為3至55分鐘，依該玻璃層212之厚度而定，各該玻璃層212之厚度係為2至25微米。 As shown in FIG. 2B, a line build-up structure 21 is formed on the carrier board 20, and the line build-up structure 21 is composed of at least one alternately stacked circuit layer 211 and a glass layer 212, wherein the glass layer 212 The forming system sequentially lays a liquid glass layer, bakes and irradiates ultraviolet light at 50 to 100 ° C, and the baking temperature is preferably 70 ° C to 95 ° C, preferably 85 ° C, and the baking time is 3 Up to 55 minutes, depending on the thickness of the glass layer 212, each of the glass layers 212 has a thickness of 2 to 25 microns.

如第2C圖所示，移除該承載板20。 The carrier plate 20 is removed as shown in FIG. 2C.

本發明復提供一種嵌埋有線路的基板，係包括：線路增層結構21，係由至少一交互堆疊之線路層211與玻璃層212所構成，各該玻璃層212之厚度係為2至25微米。 The present invention provides a substrate embedded with a line, comprising: a line build-up structure 21, which is composed of at least one alternately stacked circuit layer 211 and a glass layer 212, each of the glass layers 212 having a thickness of 2 to 25. Micron.

要補充說明的是，本實施例之嵌埋有線路的基板可為核心板，且可直接取代習知之矽中介板，以直接在核心板中進行線路重佈。 It should be noted that the substrate embedded with the circuit in this embodiment may be a core board, and may directly replace the conventional slab interposer to perform line redistribution directly in the core board.

第三實施例 Third embodiment

第3A至3D圖所示者，係本發明之玻璃膜及其製法的剖視圖。 3A to 3D are cross-sectional views of the glass film of the present invention and a process for producing the same.

如第3A圖所示，於一承載膜30上敷設液態玻璃層31，並在50至100℃間進行烘烤，烘烤的溫度係較佳為70℃至95℃，最佳為85℃，烘烤的時間係為3至55分鐘，依該液態玻璃層31之厚度而定，該液態玻璃層31之厚度係為2至25微米。 As shown in FIG. 3A, a liquid glass layer 31 is applied to a carrier film 30 and baked at 50 to 100 ° C. The baking temperature is preferably 70 ° C to 95 ° C, preferably 85 ° C. The baking time is 3 to 55 minutes. Depending on the thickness of the liquid glass layer 31, the liquid glass layer 31 has a thickness of 2 to 25 microns.

如第3B至3C圖所示，藉由滾輪32於該液態玻璃層31之表面壓印出不規則或規則的凹凸圖案311，並以紫外光經由該承載膜30去照射該液態玻璃層31，使該液態玻璃層31固化成玻璃板31’。 As shown in FIGS. 3B to 3C, an irregular or regular concave-convex pattern 311 is embossed on the surface of the liquid glass layer 31 by the roller 32, and the liquid glass layer 31 is irradiated with ultraviolet light through the carrier film 30, The liquid glass layer 31 is cured into a glass plate 31'.

如第3D圖所示，移除該承載膜30。 The carrier film 30 is removed as shown in FIG. 3D.

本發明復提供一種玻璃膜，係包括：玻璃板31’，其一表面具有不規則或規則的凹凸圖案311，該玻璃板31’之厚度係為2至25微米。 The present invention provides a glass film comprising: a glass plate 31' having a surface having an irregular or regular concave-convex pattern 311, the glass plate 31' having a thickness of 2 to 25 μm.

要補充說明的是，該承載膜上可先形成有一剝離層，再敷設該液態玻璃層，以方便最終移除該承載膜，且本實施例之玻璃膜可應用於螢幕保護、螢幕抗眩及顯示器光源的聚光或散光。 It should be added that the carrier film may be first formed with a peeling layer, and then the liquid glass layer is laid to facilitate the final removal of the carrier film, and the glass film of the embodiment can be applied to screen protection, screen anti-glare and Concentration or astigmatism of the display source.

綜上所述，相較於習知技術，由於本發明係應用感光型液態玻璃，其操作步驟簡單、操作溫度較低、操作環境為一般大氣環境、無須昂貴設備且透光度佳，故可有效節省成本；此外，感光型液態玻璃之成形方便，幾乎沒有任何形狀上的限制，所以可達成高垂直度的通孔與極薄的厚度，應用面很廣。 In summary, compared with the prior art, the present invention is applied to a photosensitive liquid glass, which has a simple operation procedure, a low operating temperature, an operating environment of a general atmospheric environment, no expensive equipment, and good light transmittance. In addition, the photosensitive liquid glass is easy to form and has almost no shape limitation, so that a high verticality through hole and an extremely thin thickness can be achieved, and the application surface is wide.

上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as follows. Listed around.

11’‧‧‧第二線路層 11’‧‧‧Second circuit layer

13‧‧‧導電柱 13‧‧‧conductive column

14’‧‧‧玻璃基材 14'‧‧‧ glass substrate

15‧‧‧導電層 15‧‧‧ Conductive layer

17‧‧‧第一線路層 17‧‧‧First circuit layer

Claims

一種基板之製法，係包括：於一承載板上形成複數導電柱；於該承載板上敷設包覆該等導電柱的液態玻璃層，且該液態玻璃層之頂面齊平於該等導電柱之頂端；在50至100℃間進行烘烤；照射紫外光；以及移除該承載板。 A method for manufacturing a substrate, comprising: forming a plurality of conductive columns on a carrier plate; laying a liquid glass layer covering the conductive columns on the carrier plate, and top surfaces of the liquid glass layers are flush with the conductive columns Topping; baking between 50 and 100 ° C; illuminating ultraviolet light; and removing the carrier.

如申請專利範圍第1項所述之基板之製法，其中，烘烤的溫度較佳為70℃至95℃。 The method for producing a substrate according to claim 1, wherein the baking temperature is preferably from 70 ° C to 95 ° C.

如申請專利範圍第1項所述之基板之製法，其中，烘烤的時間係為3至55分鐘。 The method for producing a substrate according to claim 1, wherein the baking time is 3 to 55 minutes.

如申請專利範圍第1項所述之基板之製法，其中，該液態玻璃層之厚度係為2至25微米。 The method of preparing a substrate according to claim 1, wherein the liquid glass layer has a thickness of 2 to 25 μm.

如申請專利範圍第1項所述之基板之製法，其中，形成該等導電柱之方式係以電鍍或沈積為之。 The method of fabricating a substrate according to claim 1, wherein the conductive pillars are formed by electroplating or deposition.

如申請專利範圍第1項所述之基板之製法，其中，形成該等導電柱之步驟係包括：於該承載板上形成具有複數阻層開孔的阻層；於各該阻層開孔中形成該導電柱；以及移除該阻層。 The method for manufacturing a substrate according to claim 1, wherein the step of forming the conductive pillars comprises: forming a resist layer having a plurality of barrier openings on the carrier plate; and forming openings in the barrier layers Forming the conductive pillar; and removing the resist layer.

如申請專利範圍第1項所述之基板之製法，其中，該導電柱的側壁與該導電柱周緣的承載板間之夾角係為85至90°。 The method for manufacturing a substrate according to claim 1, wherein an angle between a sidewall of the conductive pillar and a carrier of the periphery of the conductive pillar is 85 to 90°.

一種以如申請專利範圍第1至7項中任一項所述之製法所製成之基板，係包括：玻璃基材，其係由該液態玻璃層經烘烤及照射紫外光後所形成者，且其厚度係為2至25微米；以及複數導電柱，係貫穿該玻璃基材之兩表面。 A substrate produced by the method according to any one of claims 1 to 7, comprising: a glass substrate formed by baking and irradiating ultraviolet light to the liquid glass layer. And having a thickness of 2 to 25 microns; and a plurality of conductive columns extending through both surfaces of the glass substrate.

如申請專利範圍第8項所述之基板，其中，該導電柱的側壁與玻璃基材的表面間之夾角係為85至95°。 The substrate of claim 8, wherein an angle between a sidewall of the conductive pillar and a surface of the glass substrate is 85 to 95°.

如申請專利範圍第8項所述之基板，係包括：替代玻璃基材之聚亞醯胺基材，其厚度係為2至100微米；以及複數導電柱，係貫穿該聚亞醯胺基材之兩表面。 The substrate of claim 8, comprising: a polyimide substrate instead of a glass substrate, the thickness of which is 2 to 100 micrometers; and a plurality of conductive pillars extending through the polyimide substrate The two surfaces.

如申請專利範圍第10項所述之基板，其中，該導電柱的側壁與聚亞醯胺基材的表面間之夾角係為85至95°。 The substrate of claim 10, wherein the side wall of the conductive pillar and the surface of the polyimide substrate are at an angle of 85 to 95°.

如申請專利範圍第10項所述之基板，其中，該聚亞醯胺基材之厚度係為2至25微米。 The substrate of claim 10, wherein the polyimide substrate has a thickness of 2 to 25 μm.

一種嵌埋有線路的基板之製法，係包括：於一承載板上形成線路增層結構，該線路增層結構係由至少一交互堆疊之線路層與玻璃層所構成，其中，該玻璃層之形成係依序敷設液態玻璃層、在50至100℃間進行烘烤及照射紫外光；以及移除該承載板。 A method for manufacturing a substrate embedded with a line, comprising: forming a line build-up structure on a carrier board, wherein the line build-up structure is formed by at least one alternately stacked circuit layer and a glass layer, wherein the glass layer The forming system sequentially lays a liquid glass layer, bakes and irradiates ultraviolet light at 50 to 100 ° C; and removes the carrier sheet.

如申請專利範圍第13項所述之嵌埋有線路的基板之製法，其中，烘烤的溫度較佳為70℃至95℃。 The method for manufacturing a substrate embedded with a line according to claim 13, wherein the baking temperature is preferably from 70 ° C to 95 ° C.

如申請專利範圍第13項所述之嵌埋有線路的基板之製法，其中，烘烤的時間係為3至55分鐘，依照該玻璃層之厚度而定。 The system for embedding a circuit embedded substrate as described in claim 13 The method wherein the baking time is from 3 to 55 minutes, depending on the thickness of the glass layer.

如申請專利範圍第13項所述之嵌埋有線路的基板之製法，其中，各該玻璃層之厚度係為2至25微米。 The method of fabricating a circuit-embedded substrate according to claim 13, wherein each of the glass layers has a thickness of 2 to 25 μm.

一種以如申請專利範圍第13至16項中任一項所述之製法所製成之嵌埋有線路的基板，係包括：線路增層結構，係由至少一交互堆疊之線路層與玻璃層所構成，各該玻璃層之厚度係為2至25微米，其中，各該玻璃層係由該液態玻璃層經烘烤及照射紫外光後所形成者。 A circuit-embedded substrate made by the method of any one of claims 13 to 16, comprising: a line build-up structure consisting of at least one alternately stacked circuit layer and a glass layer The thickness of each of the glass layers is 2 to 25 micrometers, wherein each of the glass layers is formed by baking and irradiating ultraviolet light to the liquid glass layer.

一種玻璃膜之製法，係包括：於一承載膜上敷設液態玻璃層；在50至100℃間進行烘烤；於該液態玻璃層之表面壓印出凹凸圖案，並照射紫外光；以及移除該承載膜。 A method for preparing a glass film comprises: applying a liquid glass layer on a carrier film; baking at 50 to 100 ° C; embossing a concave and convex pattern on the surface of the liquid glass layer, and irradiating ultraviolet light; and removing The carrier film.

如申請專利範圍第18項所述之玻璃膜之製法，其中，烘烤的溫度較佳為70℃至95℃。 The method for producing a glass film according to claim 18, wherein the baking temperature is preferably from 70 ° C to 95 ° C.

如申請專利範圍第18項所述之玻璃膜之製法，其中，烘烤的時間係為3至55分鐘，依照該液態玻璃層的厚度而定。 The method for producing a glass film according to claim 18, wherein the baking time is from 3 to 55 minutes, depending on the thickness of the liquid glass layer.

如申請專利範圍第18項所述之玻璃膜之製法，其中，該液態玻璃層之厚度係為2至25微米。 The method for producing a glass film according to claim 18, wherein the liquid glass layer has a thickness of 2 to 25 μm.

如申請專利範圍第18項所述之玻璃膜之製法，其中，該壓印步驟係以滾輪為之。 The method for preparing a glass film according to claim 18, wherein The embossing step is performed by a roller.

一種以如申請專利範圍第18至22項中任一項所述之製法所製成之玻璃膜，係包括：玻璃板，其一表面具有規則或不規則的凹凸圖案，該玻璃板之厚度係為2至25微米，其中，該玻璃板係由該液態玻璃層經烘烤後，於該液態玻璃層之表面壓印出凹凸圖案，並照射紫外光後所形成者。 A glass film produced by the method according to any one of claims 18 to 22, comprising: a glass plate having a surface having a regular or irregular concave-convex pattern, the thickness of the glass plate being It is 2 to 25 micrometers, wherein the glass plate is formed by baking the liquid glass layer, embossing a concave-convex pattern on the surface of the liquid glass layer, and irradiating the ultraviolet light.