TWI517763B - Method for producing micro plasma with biocompatibility - Google Patents

Method for producing micro plasma with biocompatibility Download PDF

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TWI517763B
TWI517763B TW102108039A TW102108039A TWI517763B TW I517763 B TWI517763 B TW I517763B TW 102108039 A TW102108039 A TW 102108039A TW 102108039 A TW102108039 A TW 102108039A TW I517763 B TWI517763 B TW I517763B
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micro
plasma
microplasma
gas
temperature
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TW201436647A (en
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廖峻德
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國立成功大學
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具有生物相容性之微電漿產生方法 Biocompatible microplasma production method

本發明之主要目的係提供一種具有生物相容性之微電漿產生方法,特別是提供一種低溫、可調控性及低耗能的微電漿。 The main object of the present invention is to provide a micro-plasma production method with biocompatibility, and in particular to provide a micro-plasma with low temperature, controllability and low energy consumption.

微電漿是一種藉由提供能量,使氣體呈部分游離且具反應性的狀態,含有:熱、光、帶電粒子、中性活性物種等成分,目前微電漿技術應用在皮膚上,僅限於微電漿產生的熱效應的應用。 Microplasma is a state in which the gas is partially free and reactive by providing energy. It contains: heat, light, charged particles, neutral active species, etc. Currently, microplasma technology is applied to the skin, limited to The application of thermal effects generated by microplasma.

日常生活中幾乎人人都有皮膚外傷造成傷口的經驗,無論傷口成因為何,其傷口修復機轉大致上相似。傷口形成之後24至48小時,首先是凝血(Coagulation)及發炎(Inflammation)期,接著2至10天為細胞增殖(Proliferation)期,最後1至12個月則是重塑(Remodeling)期。 Almost everyone in daily life has experience in wounds caused by skin trauma, and the wound repair machine is roughly similar regardless of the cause of the wound. 24 to 48 hours after wound formation, first the Coagulation and Inflammation phases, followed by 2 to 10 days for the Proliferation phase and the last 1 to 12 months for the Remodeling phase.

由於雷射的熱效應會使得皮膚暫時發生脫 水、缺水,目前術後最重要的傷口照護工作就是循序漸進的做好保濕及防曬,並配合使用面膜或敷料等產品,促使受損的組織修復。汽化式侵入性的雷射傷口復原至正常狀態需約4到12週,然而,傷口復原期越長,越容易增加感染及發炎後色素沉澱等術後後遺症的機會。 Due to the thermal effect of the laser, the skin temporarily breaks off Water, water shortage, the most important wound care work after surgery is to gradually moisturize and sunscreen, and use masks or dressings to promote damaged tissue repair. It takes about 4 to 12 weeks for the vaporized invasive laser wound to return to normal. However, the longer the wound recovery period, the more likely it is to increase the chance of postoperative sequelae such as infection and post-inflammatory pigmentation.

而且,傷口復原期間經常使用的面膜或敷料含有抗菌或抗生素成分,其中,使用過多的抗生素反而不利於傷口癒合。至今尚無標準數據來規範:當皮膚接受雷射治療之後,應塗抹多少劑量的抗生素及防曬成分是適當的;在已經發表的科學期刊中有關皮膚雷射治療之後,由於皮膚失去完整性,塗擦抗生素及防曬成分極易滯留在傷口處,因過量吸收會造成皮膚敏感,甚至呈現毒性現象。 Moreover, masks or dressings often used during wound healing contain antibacterial or antibiotic ingredients, wherein the use of excessive antibiotics is not conducive to wound healing. There is no standard data to date: how many doses of antibiotics and sunscreen ingredients should be applied after the skin is treated with laser; in the published scientific journals, after skin laser treatment, due to skin loss of integrity, rubbing Antibiotics and sunscreen ingredients are easily retained in the wound, which can cause skin sensitivity and even toxicity.

病人對於皮膚雷射術後之期望效果常有落差,如何達到最佳的術後成效、最小的傷害,一直是醫療照護的終極目標。近年來,全球相關研發團隊不約而同關注傷口修復及組織新生的研究議題,微電漿醫學應用在感染性傷口癒合或在敷材改良的研究,正是最熱門的話題。雷射手術後的皮膚修護,為求達到最好的效果,最小傷害並且減低併發症,是醫療照護的終極目標。 The patient's expectation of skin laser surgery often has a gap. How to achieve the best postoperative results and minimal injury has always been the ultimate goal of medical care. In recent years, the relevant research and development teams around the world have paid close attention to the research topics of wound repair and tissue renewal. The application of microplasma medicine in the treatment of infectious wound healing or in the improvement of dressing is the hottest topic. Skin repair after laser surgery is the ultimate goal of medical care in order to achieve the best results, minimal injury and reduce complications.

有鑑於此,亟須一種低溫、無熱效應累積之方法或系統,縮短雷射治療後敏感傷口復原時間。 In view of this, there is no need for a method or system for accumulating low temperature and no thermal effect, which shortens the recovery time of sensitive wounds after laser treatment.

本發明之主要目的係提供一種具有生物相容性 之微電漿產生方法,以產生低溫、可調控成分及低耗能的微電漿降低熱效應累積於皮膚造成損傷。 The main object of the present invention is to provide a biocompatibility The micro-plasma generation method produces low-temperature, regulatable components and low-energy micro-plasma to reduce thermal effects and accumulate damage on the skin.

為達上述目的,本發明係提供一種具有生物相容性之微電漿產生方法,該方法包含下列步驟:(A)提供一裝置,該裝置包含一第一氣體貯存單元、一第二氣體貯存單元、一微電漿產生單元以及一電源供應單元;(B)將貯存於該第一氣體貯存單元中的氦氣或氬氣通入該微電漿產生單元,於預定的時間內,藉由該第一氣體來激發微電漿至穩定狀態;(C)將貯存於該第二氣體貯存單元的氧氣或氮氣通入該微電漿產生單元,而產生微電漿激發物種。其產生的崩潰電壓小。以低功率及低崩潰電壓激發微電漿,而降低平均微電漿溫度。 To achieve the above object, the present invention provides a biocompatible microplasma production method comprising the steps of: (A) providing a device comprising a first gas storage unit and a second gas storage a unit, a micro-plasma generating unit and a power supply unit; (B) passing helium or argon stored in the first gas storage unit into the micro-plasma generating unit for a predetermined time by The first gas excites the micro-plasma to a steady state; (C) passes oxygen or nitrogen stored in the second gas storage unit to the micro-plasma generating unit to generate a micro-plasma-excited species. It produces a small breakdown voltage. The micro-plasma is excited with low power and low breakdown voltage, and the average micro-plasma temperature is lowered.

在本發明步驟(A)中之該微電漿產生單元可更包含一毛細管,並在該毛細管激發微電漿而產生低溫微電漿。 The micro-plasma generating unit in the step (A) of the present invention may further comprise a capillary tube, and the micro-plasma is excited in the capillary to generate a low-temperature microplasma.

本發明所使用的微電漿激發功率較佳範圍為1~50W。 The microplasma excitation power used in the present invention preferably ranges from 1 to 50 W.

在本發明步驟(B)中,貯存於該第一氣體貯存單元中的氦氣或氬氣的流量較佳為1~10slm,更佳為1~5slm。 In the step (B) of the present invention, the flow rate of helium or argon gas stored in the first gas storage unit is preferably from 1 to 10 slm, more preferably from 1 to 5 slm.

在本發明步驟(C)中,貯存於該第二氣體貯存單元的氧氣的添加比較佳為0.1~5%,更佳為0.1~2%。 In the step (C) of the present invention, the addition of oxygen stored in the second gas storage unit is preferably from 0.1 to 5%, more preferably from 0.1 to 2%.

在本發明步驟(C)中,貯存於該第二氣體貯存單元的氮氣的添加比較佳為0.1~2%,更佳為0.1~1%。 In the step (C) of the present invention, the addition of nitrogen stored in the second gas storage unit is preferably from 0.1 to 2%, more preferably from 0.1 to 1%.

本發明的微電漿處理時間為5~300秒。 The micro-plasma treatment time of the present invention is 5 to 300 seconds.

本發明之方法可更包含於步驟(C)中設定一工作距離,其係目標物與微電漿末端之距離,該工作距離較佳 為1~12mm之範圍。 The method of the present invention may further comprise setting a working distance in the step (C), which is the distance between the target and the end of the microplasma, and the working distance is preferably It is in the range of 1~12mm.

本發明之方法可更包含一使用功率,該使用功率較佳為15~30W的範圍,更佳為17~25W。 The method of the present invention may further comprise a power used, and the power used is preferably in the range of 15 to 30 W, more preferably 17 to 25 W.

本發明之方法的步驟(A)的裝置可更包含一溫度量測系統,用以測量微電漿平均溫度,其平均溫度範圍為34~40℃。 The apparatus of step (A) of the method of the present invention may further comprise a temperature measuring system for measuring the average temperature of the micro-plasma, the average temperature of which ranges from 34 to 40 °C.

本發明之方法的步驟(A)所使用的裝置可更包含一微電漿放射光譜儀,用來定量或定性偵測微電漿激發物種種類,該微電漿激發物種可為反應性氧化物種或反應性氮化物種。 The apparatus used in the step (A) of the method of the present invention may further comprise a microplasma emission spectrometer for quantitatively or qualitatively detecting the species of the microplasma-excited species, the microplasma-exciting species may be reactive oxide species or Reactive nitrided species.

本發明的功效在於降低微電漿溫度,以低溫作用於皮膚時,較長時間用於皮膚也不致於灼熱,針對雷射處理後的敏感皮膚,可以進行溫和的皮膚照護;同時藉由反應氣體與微電漿激發氣體分流供應,大幅降低微電漿維持所需能量,耗能很低。綜上所述,本發明的特徵為提供一種低溫、可調控成分及低耗能之微電漿產生方法;並藉由產生微電漿之裝置及上述的相關參數用的應用。 The effect of the invention is to reduce the temperature of the micro-plasma, and when applied to the skin at a low temperature, it is not applied to the skin for a long time, and can be used for the sensitive skin after the laser treatment, and can be subjected to gentle skin care; The micro-plasma excitation gas is shunted to supply, greatly reducing the energy required to maintain the micro-plasma, and the energy consumption is very low. In summary, the present invention is characterized by providing a low-temperature, controllable component and a low-energy micro-plasma generation method; and an application for generating a micro-plasma device and the above-mentioned related parameters.

1‧‧‧第一氣體貯存單元 1‧‧‧First gas storage unit

2‧‧‧第二氣體貯存單元 2‧‧‧Second gas storage unit

3‧‧‧微電漿產生單元 3‧‧‧Microplasma generating unit

4‧‧‧電源供應單元 4‧‧‧Power supply unit

5‧‧‧溫度量測系統 5‧‧‧ Temperature measurement system

6‧‧‧微電漿放射光譜儀 6‧‧‧Microplasma emission spectrometer

圖1係本發明所使用的裝置圖。 Figure 1 is a diagram of the apparatus used in the present invention.

圖2係本發明實施例1之微電漿激發功率隨著添加氮氣與溫度的關係圖。 Figure 2 is a graph showing the micropulp excitation power of Example 1 of the present invention as a function of nitrogen addition and temperature.

圖3係本發明實施例2之微電漿激發功率隨著添加氧氣 與溫度的關係圖。 3 is a microplasma excitation power according to Embodiment 2 of the present invention with the addition of oxygen Diagram of temperature.

圖4係本發明實施例2所產生的微電漿物種與添加氮氣百分比和強度之關係圖。 Figure 4 is a graph showing the relationship between the microplasma species and the percentage and strength of nitrogen added in Example 2 of the present invention.

圖5係本發明實施例2在190~550及550~1000nm主要微電漿物種的放射光譜。 5 is a radiation spectrum of main microplasma species at 190-550 and 550-1000 nm in Example 2 of the present invention.

圖6係本發明實施例2之含氮微電漿主要物種隨氮氣添加量之相對強度變化情形。 Fig. 6 is a graph showing changes in the relative strength of the main species of nitrogen-containing microplasma according to Example 2 of the present invention with the amount of nitrogen added.

圖7係本發明實施例2之氬氣的放射光譜,(a)為1.7mm及(b)為3.7mm。 Fig. 7 is a graph showing the emission spectrum of argon gas according to Example 2 of the present invention, wherein (a) is 1.7 mm and (b) is 3.7 mm.

圖8係本發明實施例2之氬氣及添加0.1%的氮氣之放射光譜,(a)為1.7mm及(b)為3.7mm。 Figure 8 is a graph showing the emission spectra of argon gas and 0.1% nitrogen gas in Example 2 of the present invention, (a) being 1.7 mm and (b) being 3.7 mm.

圖9係本發明實施例2所產生的微電漿激發物種隨激發功率之相對強度變化情形。 Figure 9 is a graph showing changes in the relative intensity of the microplasma-excited species produced by Example 2 of the present invention as a function of excitation power.

圖10係本發明實施例3之溫度量測系統所量取不同參數溫度分布狀態。 Fig. 10 is a diagram showing the state of temperature distribution of different parameters measured by the temperature measuring system of the third embodiment of the present invention.

圖11(a)至(d)係本發明實施例4以氮氣與氬氣微電漿來處理纖維母細胞L929細胞增殖。 Figures 11 (a) to (d) show the fourth embodiment of the present invention treating fibroblast L929 cell proliferation with nitrogen and argon microplasma.

圖12(a)、(c)及(e)係反向散射強度光學同調斷層影像,圖12(b)、(d)及(f)為組織影像。 Figures 12(a), (c) and (e) show backscattering intensity optical tonal tomographic images, and Figures 12(b), (d) and (f) are tissue images.

圖13(a)、(c)及(e)係反向散射強度光學同調斷層影像,圖13(b)、(d)及(f)為組織影像。 Figures 13(a), (c) and (e) show backscattering intensity optical tonal tomographic images, and Figures 13(b), (d) and (f) are tissue images.

以下係藉由具體實施例說明本發明之實施方 式,熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。此外,本發明亦可藉由其他不同具體實施例加以施行或應用,在不悖離本發明之精神下進行各種修飾與變更。 The embodiments of the present invention are described below by way of specific examples. Other advantages and utilities of the present invention will be readily apparent to those skilled in the art from this disclosure. In addition, the present invention may be embodied or modified by various other embodiments without departing from the spirit and scope of the invention.

在本發明中,名詞「低溫」的意義為:在生物醫學領域,用於人體皮膚組織時,依據人類皮膚生理學,恆溫動物之中心體溫為37.0±2℃以維持正常生理功能,當體溫超過43℃或低於24~25℃會致使生物體產生不可逆的病理變化。當著輕薄衣物靜態活動於27~29℃之環境,皮膚感覺到舒適之體表的溫度為31~34℃,分佈於皮膚真皮層的冷覺接受器(cold receptors)在7~40℃會被活化,而在30~50℃時溫覺接受器(warmth receptors)則會被活化。 In the present invention, the meaning of the term "low temperature" is: in the field of biomedicine, when used for human skin tissue, according to human skin physiology, the central body temperature of the warm-blooded animal is 37.0 ± 2 ° C to maintain normal physiological functions, when the body temperature exceeds At 43 ° C or lower than 24 ~ 25 ° C will cause irreversible pathological changes in the organism. In the light and thin clothing static activity in the environment of 27 ~ 29 ° C, the skin feels comfortable body surface temperature is 31 ~ 34 ° C, cold receptors distributed in the skin dermis (cold receptors) will be 7 ~ 40 ° C will be Activation, and warmth receptors are activated at 30 to 50 °C.

在本發明中,名詞「低溫微電漿」意指用於平均溫度31~34℃之微電漿用於人體皮膚,此時人體不會產生不舒適的感覺,其不舒適感意指過熱或過冷致使痛覺接受器活化導致疼痛感。當皮膚有傷口時,因發炎反應,該部位會達到體溫37.0±2℃以上。因此,本發明之裝置的輸出溫度以介於此溫度為原則。此外,一般常用使用的低溫非熱微電漿指在100℃以下。 In the present invention, the term "low temperature microplasma" means that microplasma for an average temperature of 31 to 34 ° C is used for human skin, in which case the human body does not feel uncomfortable, and the discomfort means overheating or Too cold causes the pain receptor to activate causing pain. When the skin has a wound, the body will reach a body temperature of 37.0 ± 2 ° C or more due to an inflammatory reaction. Therefore, the output temperature of the apparatus of the present invention is based on this temperature. In addition, the commonly used low temperature non-thermal microplasma refers to below 100 °C.

在本發明中,微電漿穩定狀態定義為微電漿熱柱(plasma plume)發光穩定,熱柱不會閃爍,氣體流量控制器顯示數值穩定,其穩定所需時間10至15秒。 In the present invention, the microplasma steady state is defined as the plasma plume is stable in luminescence, the hot column does not flicker, and the gas flow controller shows a stable value, which takes 10 to 15 seconds to stabilize.

實施例1 Example 1

本發明之實施例1係產生生物相容性之微電漿 方法,該方法包括下列步驟:提供包含該第一氣體貯存單元1、該第二氣體貯存單元2、微電漿產生單元3及電源供應單元4之裝置;其裝置如圖1所示。將貯存於該第一氣體貯存器1中的該第一氣體通入該微電漿產生單元3中,使第一氣體激發微電漿,於10至15秒後微電漿達穩定狀態,其中第一氣體為氬氣。接著,將貯存於該第二氣體貯存器2中的該第二氣體通入該微電漿產生單元3中,而產生微電漿激發物種。最後經由該微電漿放射光譜儀6所量測的放射光譜來辨別微電漿激發物種。 Example 1 of the present invention produces a biocompatible microplasma The method comprises the steps of: providing a device comprising the first gas storage unit 1, the second gas storage unit 2, the micro-plasma generating unit 3, and the power supply unit 4; the apparatus is as shown in FIG. Discharging the first gas stored in the first gas reservoir 1 into the micro-plasma generating unit 3, causing the first gas to excite the micro-plasma, and after 10 to 15 seconds, the micro-plasma reaches a steady state, wherein The first gas is argon. Next, the second gas stored in the second gas reservoir 2 is passed into the micro-plasma generating unit 3 to generate a micro-plasma-excited species. Finally, the microplasma-excited species are identified by the emission spectrum measured by the microplasma spectrometer 6.

本實施例1中之第二氣體為氮氣,其添加百分比為0%、0.1%、0.5%及2%。微電漿激發功率為15、16、17、18、19、20及25W。 The second gas in the first embodiment is nitrogen, and the percentages thereof are 0%, 0.1%, 0.5%, and 2%. The microplasma excitation power is 15, 16, 17, 18, 19, 20, and 25W.

圖2係在實施例1之條件下,添加的氮氣與溫度之關係圖。圖2係在微電漿激發功率為15、16、17、18、19、20及25W下,添加0%、0.1%、0.5%及2%氮氣與溫度的關係圖。由圖2的結果可得知,在15~25W的激發功率下,本實施例所產生的微電漿溫度在30~54℃的範圍之間,可產生31~34℃之間的低溫微電漿。 Figure 2 is a graph showing the relationship between nitrogen added and temperature under the conditions of Example 1. Figure 2 is a graph showing the relationship between 0%, 0.1%, 0.5%, and 2% nitrogen and temperature at a micropulp excitation power of 15, 16, 17, 18, 19, 20, and 25W. It can be seen from the results of FIG. 2 that the micro-plasma temperature generated in this embodiment is between 30 and 54 ° C at an excitation power of 15 to 25 W, and can generate a low-temperature micro-electricity between 31 and 34 ° C. Pulp.

實施例2 Example 2

在本發明之實施例2中,除了第二氣體的設定條件與實施例1不同之外,其餘步驟皆與實施例1相同。實施例2之第二氣體為氧氣,其添加百分比為0%、0.1%、0.5%及2%。 In the second embodiment of the present invention, the remaining steps are the same as those in the first embodiment except that the setting conditions of the second gas are different from those in the first embodiment. The second gas of Example 2 was oxygen with a percentage of addition of 0%, 0.1%, 0.5% and 2%.

圖3係在實施例2之條件下,添加的氧氣與溫 度之關係圖。由圖3的結果可得知隨著添加氧的百分比與激發功率,可產生本發明所需要的低溫微電漿。圖3係在微電漿激發功率為15、16、17、18、19、20及25W下,添加0%、0.1%、0.5%及2%氧氣與溫度的關係圖。圖4係在實施例1的條件下,所產生的微電漿物種與添加氮氣百分比和強度之關係圖,所激發出的物種為NO、OH、Ar及O。由圖4可知不同添加氮氣百分比會產生不同的強度的激發物種,因此可調整微電漿成分。 Figure 3 is the oxygen and temperature added under the conditions of Example 2. Relationship diagram. From the results of Figure 3, it can be seen that with the percentage of added oxygen and the excitation power, the low temperature microplasma required by the present invention can be produced. Figure 3 is a plot of 0%, 0.1%, 0.5%, and 2% oxygen versus temperature for microplasma excitation powers of 15, 16, 17, 18, 19, 20, and 25W. Figure 4 is a graph showing the relationship between the generated microplasma species and the percentage and strength of nitrogen added under the conditions of Example 1, and the excited species are NO, OH, Ar and O. It can be seen from Fig. 4 that different percentages of added nitrogen will produce excited species of different strengths, so the micro-plasma composition can be adjusted.

圖5為在實施例1的條件下,在190~550及550~1000nm主要微電漿物種的放射光譜。圖6為在實施例1的條件下,含氮微電漿主要物種Ar(750nm)、O(777nm)、OH(306nm)、NH(336nm)以及NO(236nm)隨氮氣添加量之相對強度變化情形,其中氮氣添加量為0至0.5%。 Figure 5 is a graph showing the emission spectra of major microplasma species at 190-550 and 550-1000 nm under the conditions of Example 1. 6 is a graph showing the relative intensity changes of nitrogen-containing microplasma main species Ar (750 nm), O (777 nm), OH (306 nm), NH (336 nm), and NO (236 nm) with nitrogen addition amount under the conditions of Example 1. In the case, the amount of nitrogen added is from 0 to 0.5%.

圖7為氬氣的放射光譜,(a)為1.7mm及(b)為3.7mm。圖8為氬氣及添加0.1%的氮氣之放射光譜,(a)為1.7mm及(b)為3.7mm。圖9為在實施例1的條件下,所產生的微電漿激發物種,NO、OH、Ar及O,隨激發功率之相對強度變化情形,其中(a)為純氬氣的情況下,(b)為氬氣與添加0.1%氮氣的條件下,由圖3至9可知本發明所產生的微電漿為可調控成分及低耗能的微電漿。 Fig. 7 is a radiation spectrum of argon gas, (a) being 1.7 mm and (b) being 3.7 mm. Figure 8 is a radiation spectrum of argon gas and 0.1% nitrogen gas, (a) being 1.7 mm and (b) being 3.7 mm. Figure 9 is a graph showing the relative intensity changes of the excited micro-plasma excited species, NO, OH, Ar and O, under the conditions of Example 1, with (a) pure argon ( b) Under the condition of argon gas and addition of 0.1% nitrogen gas, it can be seen from Figs. 3 to 9 that the microplasma produced by the present invention is a controllable component and a low-energy microplasma.

由上述之實施例1和2可知添加不同的第二氣體,微電漿物種的變化情形,因而可由實施例之結果得知微電漿中產生的放射光波長及微電漿激發物種的種類。此外,由實施例1和2之結果可知,添加少量的第二氣體即可控制 微電漿激發物種的產生。 It can be seen from the above-mentioned Embodiments 1 and 2 that the change of the micro-plasma species by adding different second gases is known, and thus the wavelength of the emitted light generated in the micro-plasma and the kind of the micro-plasma-excited species can be known from the results of the examples. Further, as is apparent from the results of Examples 1 and 2, it is possible to control by adding a small amount of the second gas. Microplasma stimulates the production of species.

實施例3 Example 3

在本發明之實施例3中,除了激發功率為19、21、23、25、27、29及31之外,所有條件皆與實施例1相同,並進一步增加溫度測量系統5。在工作距離為別為3mm、6mm及9mm下,在激發功率為19、21、23、25、27、29及31時,量測微電漿所產生的溫度,所測量的溫度結果如表1所示。 In Embodiment 3 of the present invention, except for the excitation powers of 19, 21, 23, 25, 27, 29 and 31, all the conditions are the same as in Embodiment 1, and the temperature measuring system 5 is further added. When the working distance is other than 3mm, 6mm and 9mm, when the excitation power is 19, 21, 23, 25, 27, 29 and 31, the temperature generated by the micro-plasma is measured. The measured temperature results are shown in Table 1. Shown.

溫度單位為攝氏溫度(℃),外加功率單位為瓦特(Watts)。 The temperature unit is Celsius (°C) and the applied power is Watts.

由實施例3所測得的結果可以選擇適合人體的溫度參數。造成溫度變化為功率、工作距離及所添加的氣體。圖10為藉由溫度量測系統所量取不同參數溫度分布狀態。 From the results measured in Example 3, temperature parameters suitable for the human body can be selected. The temperature changes are the power, the working distance and the added gas. Figure 10 shows the temperature distribution of different parameters measured by the temperature measurement system.

實施例4 Example 4

在本發明之實施例4中,除了第二氣體為0.5%之氮氣、激發功率為17W、工作距離為9mm及微電漿處理時間為5至15秒之外,其餘條件皆與實施例1相同。實施例4係將所激發的微電漿應用於纖維母細胞上。 In the fourth embodiment of the present invention, the conditions are the same as those in the embodiment 1 except that the second gas is 0.5% nitrogen gas, the excitation power is 17 W, the working distance is 9 mm, and the micro-plasma treatment time is 5 to 15 seconds. . Example 4 applied the excited microplasma to the fibroblasts.

比較例1 Comparative example 1

比較例1為纖維母細胞沒有使用實施例4所激發的微電漿來進行處理。 Comparative Example 1 was that the fibroblasts were not treated with the microplasma excited by Example 4.

圖11(a)及(b)以氮氣與氬氣微電漿來處理纖維母細胞L929細胞增殖:(a)在5、10或15秒時,藉由氮氣與氬氣微電漿,比較L929細胞增殖與未經由微電漿處理的比較例1,比較0小時與48小時,在48小時時細胞數目幾乎增加3倍。(b)相反地,於氣體流動處理,在纖維母細胞L929細胞數目並沒觀察到有重大的變化。於圖11(c)及(d)中,在微顯影術下以氮氣與氬氣微電漿處理來激發的L929細胞移動:(c)在6及12小時之後,以氮氣與氬氣微電漿處理,擷取顯示細胞移動之代表性的影像。(d)在5、10及15秒下,以氮氣與氬氣微電漿來處理纖維母細胞L929,與6小時後的比較例1做比較,纖維母細胞L929大量增加。 Figure 11 (a) and (b) treatment of fibroblast L929 cell proliferation with nitrogen and argon micro-plasma: (a) at 5, 10 or 15 seconds, by micro-plasma with nitrogen and argon, compare L929 Cell proliferation was compared to Comparative Example 1, which was not treated by microplasma, comparing 0 hours and 48 hours, and the number of cells was almost tripled at 48 hours. (b) Conversely, in the gas flow treatment, no significant changes were observed in the number of cells of the fibroblast L929. In Figures 11 (c) and (d), L929 cells were excited by micro-plasma treatment with nitrogen and argon micro-plasma: (c) after 6 and 12 hours, with nitrogen and argon micro-electricity The slurry is processed to capture a representative image showing the movement of the cells. (d) The fibroblast L929 was treated with nitrogen and argon microplasma at 5, 10 and 15 seconds, and compared with Comparative Example 1 after 6 hours, the fibroblast L929 was greatly increased.

實施例5 Example 5

本發明之實施例5係以正常健康的C57BL/6雄性老鼠進行實驗,步驟如下:將小鼠全身麻醉後,將其背部剃毛,以雷射(如表二之雷射能量參數)在小鼠背部創造傷口,傷口形成後立即給予微電漿處理,處理條件為1 分鐘/次/天,共1天,傷口小鼠之日常照護為單隻飼養在一個鼠籠,給予充足食物及飲水,飼育條件符合國立成功大學實驗動物照護與使用委員會(NCKU IACUC)規定。 Example 5 of the present invention was carried out in a normal healthy C57BL/6 male mouse by the following steps: after the general anesthesia of the mouse, the back was shaved with a laser (such as the laser energy parameter of Table 2) at a small angle. The wound is created on the back of the mouse, and the microplasma is treated immediately after the wound is formed. The treatment condition is 1 Minutes/time/day for a total of 1 day, the daily care of wounded mice is kept in a single cage, given adequate food and water, and the breeding conditions are in accordance with the National University of Survival Laboratory Animal Care and Use Committee (NCKU IACUC).

實施例5之微電漿激發的功率為25至35W之間,先以純氬氣5slm激發微電漿,待10至15秒微電漿穩定後,再混合0.1%純氮氣、功率為17至25W、工作距離3.7mm及微電漿處理時間1分鐘/次/天。 The micro-plasma excitation power of Example 5 is between 25 and 35 W. The micro-plasma is excited by pure argon gas 5 slm. After 10 to 15 seconds, the micro-plasma is stabilized, and then 0.1% pure nitrogen gas is mixed, and the power is 17 to 25 W. , working distance 3.7mm and micro-plasma treatment time 1 minute / time / day.

實施例6 Example 6

本發明施實例6係以正常健康的C57BL/6雄性老鼠進行實驗,其步驟除了處理條件為1分鐘/次/天,共3天外,其餘步驟皆與實施例5相同,且實施例6之微電漿參數與實施例5相同。 Example 6 of the present invention was carried out in a normal healthy C57BL/6 male mouse, except that the treatment conditions were 1 minute/time/day for 3 days, and the other steps were the same as in Example 5, and Example 6 was slightly The plasma parameters were the same as in Example 5.

比較例2 Comparative example 2

以正常健康的C57BL/6雄性老鼠進行實驗,將小鼠全身麻醉後,將其背部剃毛,以雷射(如表二之雷射能量參數)在小鼠背部創造傷口,未給予微電漿處理。 The mice were routinely anesthetized with normal healthy C57BL/6 mice. After the mice were anesthetized, the backs were shaved and a laser (such as the laser energy parameters of Table 2) was used to create wounds on the back of the mice. Microplasma was not given. deal with.

圖12(a)、(c)及(e)為反向散射強度光學同調斷層影像(backscattered intensity OCT image),圖12(b)、(d)及(f)為組織影像。圖12(a)及(b)為雷射所造成的傷口,圖12(c)及(d)為以微電漿處理雷射所造成的傷口1次,圖12(e)及(f)為以微電漿處理雷射所造成的傷口3次,共觀察3天。 12(a), (c) and (e) are backscattered intensity OCT images, and FIGS. 12(b), (d) and (f) are tissue images. Figure 12 (a) and (b) are the wounds caused by the laser, and Figures 12 (c) and (d) are the wounds caused by the micro-plasma treatment of the laser, Figure 12 (e) and (f) The wound caused by laser treatment with micro-plasma was observed 3 times for a total of 3 days.

圖13(a)、(c)及(e)為反向散射強度光學同調斷層影像(backscattered intensity OCT image),圖13(b)、(d)及(f)為組織影像。圖13(a)及(b)為雷射所造成的傷口,圖13(c)及(d)為以微電漿處理雷射所造成的傷口1次,圖13(e)及(f)為以微電漿處理雷射所造成的傷口3次,共觀察7天。 13(a), (c) and (e) are backscattered intensity OCT images, and FIGS. 13(b), (d) and (f) are tissue images. Figure 13 (a) and (b) are the wounds caused by the laser, and Figures 13 (c) and (d) are the wounds caused by the micro-plasma treatment of the laser, Figure 13 (e) and (f) The wound caused by laser treatment with micro-plasma was observed 3 times for a total of 7 days.

由實施例5及6的結果可知本發明所產生的微電漿具有生物相容性,在用於傷口的處理及組織細胞上。 From the results of Examples 5 and 6, it is understood that the microplasma produced by the present invention is biocompatible and is used for treatment of wounds and tissue cells.

上述實施例僅係為了方便說明而舉例而已,本發明所主張之權利範圍自應以申請專利範圍所述為準,而非僅限於上述實施例。 The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

本發明應用在雷射傷口修復,使用溫和的、與人體溫度相近的微電漿系統,協助處理雷射治療後造成的敏感傷口,縮短雷射術後皮膚回復至最佳狀態的時間。針對工商繁忙而又想有效且快速改善皮膚問題的現代人及期 待回春之皮膚老化者,能有所助益。本發明致力於達到使患者在接受微電漿療程時是無痛的,並能舒適、快速的就完成傷口照護的步驟,綜上所述本發明具有產業利用性。 The invention is applied to laser wound repair, using a mild micro-plasma system similar to human body temperature, assisting in dealing with sensitive wounds caused by laser treatment, and shortening the time for the skin to return to the optimal state after laser surgery. Modern people and people who want to effectively and quickly improve skin problems for busy businesses The skin aging person to be rejuvenated can help. The present invention is directed to the steps of enabling a patient to be painless when receiving a microplasma treatment, and to complete the wound care comfortably and quickly. In summary, the present invention has industrial applicability.

1‧‧‧第一氣體貯存單元 1‧‧‧First gas storage unit

2‧‧‧第二氣體貯存單元 2‧‧‧Second gas storage unit

3‧‧‧微電漿產生單元 3‧‧‧Microplasma generating unit

4‧‧‧電源供應單元 4‧‧‧Power supply unit

5‧‧‧溫度測量系統 5‧‧‧Temperature measurement system

6‧‧‧微電漿放射光譜儀 6‧‧‧Microplasma emission spectrometer

Claims (12)

一種具有生物相容性之微電漿產生方法,該方法包含下列步驟:(A)提供一裝置,該裝置包含一第一氣體貯存單元、一第二氣體貯存單元、一微電漿產生單元以及一電源供應單元;(B)將貯存於該第一氣體貯存單元中的氦氣或氬氣通入該微電漿產生單元,於預定的時間內,藉由該第一氣體來激發微電漿至穩定狀態;以及(C)將貯存於該第二氣體貯存單元的氮氣通入該微電漿產生單元,而產生微電漿激發物種;其中,該微電漿激發功率為15~25W,且該氮氣的添加百分比為0.1~2%。 A biocompatible microplasma production method comprising the steps of: (A) providing a device comprising a first gas storage unit, a second gas storage unit, a micro-plasma generating unit, and a power supply unit; (B) passing helium or argon stored in the first gas storage unit into the micro-plasma generating unit to excite the micro-plasma by the first gas for a predetermined time And (C) passing nitrogen stored in the second gas storage unit into the micro-plasma generating unit to generate a micro-plasma-excited species; wherein the micro-plasma excitation power is 15 to 25 W, and The percentage of nitrogen added is 0.1 to 2%. 如申請專利範圍第1項所述之方法,其中,步驟(A)中之該微電漿產生單元更包含一毛細管,並在該毛細管激發微電漿而產生低溫微電漿。 The method of claim 1, wherein the micro-plasma generating unit in the step (A) further comprises a capillary tube, and the micro-plasma is excited in the capillary to generate a low-temperature micro-plasma. 如申請專利範圍第1項所述之方法,其中,步驟(A)之該第一氣體貯存單元更包含一氣體流量顯示器,該氣體流量顯示器用以顯示激發微電漿的穩定狀態。 The method of claim 1, wherein the first gas storage unit of step (A) further comprises a gas flow display for displaying a steady state of the excited microplasma. 如申請專利範圍第1項所述之方法,其中,該氬氣的流量為1~10slm。 The method of claim 1, wherein the flow rate of the argon gas is 1 to 10 slm. 如申請專利範圍第4項所述之方法,其中,該氬氣的流量為1~5slm。 The method of claim 4, wherein the flow rate of the argon gas is 1 to 5 slm. 如申請專利範圍第1項所述之方法,其中,該氮氣的 添加百分比為0.1~1%。 The method of claim 1, wherein the nitrogen gas The percentage added is 0.1~1%. 如申請專利範圍第1項所述之方法,其中,微電漿處理時間為5~300秒。 The method of claim 1, wherein the micro-plasma treatment time is 5 to 300 seconds. 如申請專利範圍第1項所述之方法,其中,該方法更包含於步驟(C)中設定一工作距離,其係該目標物與該微電漿末端之距離。 The method of claim 1, wherein the method further comprises setting a working distance in the step (C), which is the distance between the target and the end of the microplasma. 如申請專利範圍第8項所述之方法,其中,該工作距離為1~12mm之範圍。 The method of claim 8, wherein the working distance is in the range of 1 to 12 mm. 如申請專利範圍第1項所述之方法,其中,步驟(A)的裝置更包含一溫度量測系統,用以測量微電漿溫度,其溫度範圍為34~40℃。 The method of claim 1, wherein the apparatus of step (A) further comprises a temperature measuring system for measuring the micro-plasma temperature, wherein the temperature ranges from 34 to 40 °C. 如申請專利範圍第1項所述之方法,其中,步驟(A)所使用的裝置更包含一微電漿放射光譜儀,用來定量或定性偵測微電漿激發物種種類。 The method of claim 1, wherein the apparatus used in the step (A) further comprises a micro-plasma emission spectrometer for quantitatively or qualitatively detecting the species of the micro-plasma-excited species. 如申請專利範圍第11項所述之方法,其中,該微電漿激發物種為反應性氧化物種或反應性氮化物種。 The method of claim 11, wherein the microplasma-excited species is a reactive oxide species or a reactive nitride species.
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