TWI517283B - Liquid processing device and control method of liquid processing device - Google Patents

Liquid processing device and control method of liquid processing device Download PDF

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Publication number
TWI517283B
TWI517283B TW101129731A TW101129731A TWI517283B TW I517283 B TWI517283 B TW I517283B TW 101129731 A TW101129731 A TW 101129731A TW 101129731 A TW101129731 A TW 101129731A TW I517283 B TWI517283 B TW I517283B
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Taiwan
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substrate
wafer
rotating plate
processing apparatus
liquid processing
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TW101129731A
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Chinese (zh)
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TW201324654A (en
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Nobuhiko Mouri
Shoichiro Hidaka
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

液體處理裝置及液體處理裝置之控制方法 Liquid processing device and control method of liquid processing device

本發明係有關於以液體處理半導體晶圓或平面顯示器用玻璃基板等基板的液體處理裝置、及液體處理裝置之控制方法。 The present invention relates to a liquid processing apparatus for treating a substrate such as a semiconductor wafer or a glass substrate for a flat panel display with a liquid, and a method of controlling the liquid processing apparatus.

於製造半導體積體電路及平面顯示器之製程，會對基板進行使用液體之液體處理。為了進行此種處理，有時會使用單片式基板處理之液體處理裝置，其具有：基板保持部，保持基板之外周部並加以旋轉；液體供給部，對基板保持部所保持之基板供給液體；杯體部，承接供給至基板且因基板之旋轉而飛散之液體。 In the process of manufacturing a semiconductor integrated circuit and a flat panel display, the substrate is subjected to a liquid treatment using a liquid. In order to perform such a treatment, a liquid processing apparatus for monolithic substrate processing may be used, which has a substrate holding portion that holds and rotates the outer peripheral portion of the substrate, and a liquid supply portion that supplies the liquid to the substrate held by the substrate holding portion. The cup body receives the liquid supplied to the substrate and scattered by the rotation of the substrate.

[習知技術文獻] [Practical Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2010-93190號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-93190

[專利文獻2]日本特開平10-209254號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 10-209254

然而，對於降低製造成本的期待日益殷切，同時，對於在上述液體處 理裝置所進行之基板的液體處理中，減少附著至基板的異物(particles)之要求也越來越高。習知技術中，於半導體晶圓(以下，僅稱作晶圓)，從晶圓之周緣起例如約5mm寬度之區域，比其更內側之處形成有半導體元件(晶片)；但為得到更多晶片，其寬度逐漸減少到例如約2mm。因此，就連在晶圓邊緣附近，也產生減少異物之必要性。 However, expectations for lowering manufacturing costs are growing, and at the same time, for the above liquids In the liquid processing of the substrate by the device, the requirements for reducing the particles adhering to the substrate are also increasing. In the conventional technology, in a semiconductor wafer (hereinafter, simply referred to as a wafer), a semiconductor element (wafer) is formed in a region having a width of, for example, about 5 mm from the periphery of the wafer, more than the inside thereof; Multi-wafers whose width is gradually reduced to, for example, about 2 mm. Therefore, even in the vicinity of the edge of the wafer, there is a need to reduce foreign matter.

就晶圓邊緣附近產生異物之原因而言，可列舉：供給至晶圓之液體，附著於液體所供給之面(電路形成面)之相反側的面、或是包含於液體之異物殘留在相反側的面(與電路形成面相反側的面)。如此所產生之異物，雖可藉由洗淨相反側的面來減少，但會造成工序數量增加，進而導致製造成本增加，故非上策。又，於洗淨相反側的面(與電路形成面相反側的面)時，此時所使用之液體有可能附著至頂面(電路形成面)，這麼一來有可能又會需要再度進行頂面之洗淨。因此，需要在單片式基板處理之液體處理裝置，減少液體附著至相反側的面之情形發生。 The reason why foreign matter is generated in the vicinity of the edge of the wafer is that the liquid supplied to the wafer adheres to the surface on the opposite side of the surface (circuit forming surface) to which the liquid is supplied, or the foreign matter contained in the liquid remains on the opposite side. Side surface (surface opposite to the circuit forming surface). The foreign matter generated in this way can be reduced by washing the surface on the opposite side, but the number of processes is increased, which in turn leads to an increase in manufacturing cost, which is not the best policy. Further, when the surface on the opposite side (the surface opposite to the circuit forming surface) is washed, the liquid used at this time may adhere to the top surface (circuit forming surface), and thus it may be necessary to perform the top again. Wash the face. Therefore, there is a need for a liquid processing apparatus that processes a single-piece substrate to reduce the occurrence of liquid adhesion to the opposite side surface.

本發明，係有鑑於上述背景所研發，而提供一種單片式基板處理之液體處理裝置及液體處理方法，其可避免液體附著在與洗淨面相反側的面上。 The present invention has been made in view of the above circumstances, and provides a liquid processing apparatus and a liquid processing method for monolithic substrate processing, which can prevent liquid from adhering to a surface on the opposite side to a cleaning surface.

若根據本發明之第1態樣，提供一種液體處理裝置，包括：旋轉板，藉由旋轉驅動部而旋轉；基板支持部，沿著該旋轉板之周緣設置，支持基板的周緣；導引部，設於該基板支持部的上端，將該基板導引至該基板支持部；以及供給部，對於由該基板支持部支持該周緣之該基板，從上方供給液體；該導引部，沿著該旋轉板的周向至少設置3個以上，且相較於藉由該基板支持部支持該周緣之該基板的表面，具有更高的高度。 According to a first aspect of the present invention, a liquid processing apparatus includes: a rotating plate that is rotated by a rotary driving portion; and a substrate supporting portion that is disposed along a circumference of the rotating plate to support a periphery of the substrate; and a guiding portion Provided at an upper end of the substrate supporting portion to guide the substrate to the substrate supporting portion; and a supply portion for supplying the liquid from the upper side of the substrate supporting the peripheral edge of the substrate supporting portion; the guiding portion along the guiding portion The rotating plate has at least three or more circumferential directions, and has a higher height than the surface of the substrate which supports the peripheral edge by the substrate supporting portion.

若根據本發明之第2態樣，提供一種液體處理裝置之控制方法，控制一種液體處理裝置，該液體處理裝置包括：旋轉板，藉由旋轉驅動部而旋轉；基板支持部，沿著該旋轉板之周緣設置，支持基板的周緣；導引部，設於該基板支持部的上端，將該基板導引至該基板支持部；以及供給部，對於 由該基板支持部支持該周緣之該基板，從上方供給液體；該導引部，沿著該旋轉板的周向至少設置3個以上，且相較於藉由該基板支持部支持該周緣之該基板的表面，具有更高的高度。該控制方法，包含：一邊以該導引部導引該基板，一邊藉由以該基板支持部之該傾斜面支持該基板之周緣，使該基板支持部支持該基板之步驟；旋轉該基板之步驟；以及對該基板供給液體之步驟。 According to a second aspect of the present invention, there is provided a method of controlling a liquid processing apparatus for controlling a liquid processing apparatus comprising: a rotating plate rotated by a rotary driving portion; and a substrate supporting portion along the rotation a periphery of the board is disposed to support a periphery of the substrate; a guiding portion is disposed at an upper end of the substrate supporting portion, guiding the substrate to the substrate supporting portion; and a supply portion for The substrate supporting the substrate is supported by the substrate supporting portion, and the liquid is supplied from above; the guiding portion is provided at least three or more along the circumferential direction of the rotating plate, and the peripheral edge is supported by the substrate supporting portion. The surface of the substrate has a higher height. The control method includes the steps of supporting the substrate by the guiding portion, supporting the substrate by the inclined surface of the substrate supporting portion, and supporting the substrate by the substrate supporting portion; rotating the substrate a step; and a step of supplying a liquid to the substrate.

根據本發明之實施形態，提供一種單片式基板處理之液體處理裝置、及液體處理方法，可以避免液體附著於與基板洗淨面相反側的面。 According to an embodiment of the present invention, there is provided a liquid processing apparatus for processing a single-piece substrate and a liquid processing method, which can prevent a liquid from adhering to a surface on a side opposite to a cleaning surface of the substrate.

1‧‧‧液體處理裝置 1‧‧‧Liquid handling device

11‧‧‧搬送機構 11‧‧‧Transportation agency

11a‧‧‧保持臂部 11a‧‧‧ Keeping the arm

12‧‧‧導軌 12‧‧‧ rails

13‧‧‧載置台 13‧‧‧ mounting table

14‧‧‧搬送機構 14‧‧‧Transportation agency

14a‧‧‧保持臂部、搬送臂部 14a‧‧‧ Keep arm and transport arm

15‧‧‧導軌 15‧‧‧rail

16‧‧‧搬送室 16‧‧‧Transport room

16a‧‧‧反轉機構 16a‧‧‧Reversal mechanism

17‧‧‧控制部 17‧‧‧Control Department

21‧‧‧殼體 21‧‧‧ housing

21a‧‧‧搬送口 21a‧‧‧Transportation port

22‧‧‧杯體部 22‧‧‧ cup body

23‧‧‧晶圓保持旋轉部 23‧‧‧ wafer holding rotation

23A‧‧‧夾持部 23A‧‧‧ gripping department

23B‧‧‧偏壓構件 23B‧‧‧ biasing members

23C‧‧‧導管 23C‧‧‧ catheter

23G‧‧‧夾持機構 23G‧‧‧Clamping mechanism

23L‧‧‧槓桿構件 23L‧‧‧Leverage components

23P‧‧‧旋轉板 23P‧‧‧Rotating plate

23S‧‧‧旋轉軸 23S‧‧‧Rotary axis

23T‧‧‧旋轉軸 23T‧‧‧Rotary axis

24‧‧‧刷頭 24‧‧‧ brush head

24A‧‧‧臂部 24A‧‧‧arm

24B‧‧‧開口 24B‧‧‧ openings

24C‧‧‧導管 24C‧‧‧ catheter

40‧‧‧導引腳 40‧‧‧ lead pin

40I‧‧‧側面 40I‧‧‧ side

41‧‧‧昇降機構 41‧‧‧ Lifting mechanism

42‧‧‧臂體 42‧‧‧Body

43‧‧‧推桿構件 43‧‧‧Push member

51‧‧‧晶圓支持部 51‧‧‧ Wafer Support Department

51'‧‧‧晶圓支持部 51'‧‧‧ Wafer Support Department

51A‧‧‧頂面平坦部 51A‧‧‧Top flat

51B‧‧‧傾斜面 51B‧‧‧ sloped surface

52‧‧‧導引腳 52‧‧‧ Lead pin

52'‧‧‧導引腳 52'‧‧‧ lead pin

52B‧‧‧導引傾斜面 52B‧‧‧ Guided inclined surface

52I‧‧‧側面 52I‧‧‧ side

100‧‧‧基板處理裝置 100‧‧‧Substrate processing unit

500‧‧‧晶圓支持部 500‧‧‧ Wafer Support Department

S1‧‧‧載具站 S1‧‧‧ Vehicle Station

S2‧‧‧搬入搬出站 S2‧‧‧ moving into and out of the station

S3‧‧‧液體處理站 S3‧‧‧ Liquid handling station

C‧‧‧晶圓載具 C‧‧‧ wafer carrier

C1‧‧‧缺口部 C1‧‧‧Gap section

C2‧‧‧缺口部 C2‧‧‧ gap

G‧‧‧溝部 G‧‧‧Ditch Department

M‧‧‧馬達 M‧‧ motor

W‧‧‧晶圓 W‧‧‧ wafer

X‧‧‧方向 X‧‧‧ direction

Y‧‧‧方向 Y‧‧‧ direction

圖1係顯示組裝有本發明實施形態之液體處理裝置的基板處理裝置之概略俯視圖。 Fig. 1 is a schematic plan view showing a substrate processing apparatus in which a liquid processing apparatus according to an embodiment of the present invention is incorporated.

圖2係顯示本發明實施形態之液體處理裝置之概略側視圖。 Fig. 2 is a schematic side view showing a liquid processing apparatus according to an embodiment of the present invention.

圖3係顯示圖2之液體處理裝置之概略俯視圖。 Fig. 3 is a schematic plan view showing the liquid processing apparatus of Fig. 2.

圖4(a)(b)係用以說明圖2之液體處理裝置之晶圓支持部中的旋轉板之說明圖。 4(a) and 4(b) are explanatory views for explaining a rotary plate in the wafer support portion of the liquid processing apparatus of Fig. 2.

圖5係顯示本發明另一實施形態之液體處理裝置之概略側視圖。 Fig. 5 is a schematic side view showing a liquid processing apparatus according to another embodiment of the present invention.

圖6係顯示圖5之液體處理裝置之概略俯視圖。 Fig. 6 is a schematic plan view showing the liquid processing apparatus of Fig. 5.

圖7係顯示圖5之液體處理裝置的晶圓支持部中的旋轉板之立體圖。 Fig. 7 is a perspective view showing a rotary plate in the wafer support portion of the liquid processing apparatus of Fig. 5.

圖8係顯示圖4之旋轉板之局部剖面圖。 Figure 8 is a partial cross-sectional view showing the rotating plate of Figure 4.

圖9(a)(b)係顯示圖5之液體處理裝置的晶圓支持部所支持的晶圓之概略剖面圖。 9(a) and 9(b) are schematic cross-sectional views showing a wafer supported by a wafer support unit of the liquid processing apparatus of Fig. 5.

圖10(a)(b)係說明圖5之液體處理裝置的效果之說明圖。 Fig. 10 (a) and (b) are explanatory views for explaining the effects of the liquid processing apparatus of Fig. 5.

圖11(a)(b)係說明圖5之液體處理裝置的另一效果之說明圖。 11(a) and 11(b) are explanatory views for explaining another effect of the liquid processing apparatus of Fig. 5.

圖12係顯示圖5之液體處理裝置的晶圓支持部之變形例的圖。 Fig. 12 is a view showing a modification of the wafer support portion of the liquid processing apparatus of Fig. 5;

以下，一邊參照所附圖式，一邊說明本發明之非限定的例示實施形態。 於所附的所有圖式中，對於相同或對應之構件或零件，標註相同或對應之參考符號，並省略重複之說明。又，圖式之目的不在於顯示構件或構件間的相對比例，因此其具體之尺寸，應參酌以下之非限定實施形態，而由所屬技術領域中具有通常知識者加以決定。 Hereinafter, non-limiting exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same or corresponding reference numerals are given to the same or corresponding components, and the repeated description is omitted. Further, the drawings are not intended to show the relative proportions of members or members, and thus the specific dimensions thereof should be determined by the following non-limiting embodiments, as determined by those of ordinary skill in the art.

首先，參考圖1，說明包含本發明實施形態之液體處理裝置的基板處理裝置。圖1係顯示本發明實施形態之基板處理裝置的概略俯視圖。如圖所示，基板處理裝置100具備：載具站S1，載置有收納複數晶圓W的複數(於圖示之例為4個)晶圓載具C；搬入搬出站S2，在載具站S1及後述之液體處理站S3之間移交晶圓W；以及液體處理站S3，配置有本發明之實施形態的液體處理裝置1。 First, a substrate processing apparatus including a liquid processing apparatus according to an embodiment of the present invention will be described with reference to Fig. 1 . Fig. 1 is a schematic plan view showing a substrate processing apparatus according to an embodiment of the present invention. As shown in the figure, the substrate processing apparatus 100 includes a carrier station S1 on which a plurality of wafer carriers C (four in the illustrated example) for storing a plurality of wafers W are placed, and a loading/unloading station S2 is carried in the carrier station. The wafer W is transferred between S1 and a liquid processing station S3 to be described later, and the liquid processing station S3 is disposed with the liquid processing apparatus 1 according to the embodiment of the present invention.

搬入搬出站S2具有搬送機構11，其自晶圓載具C搬出晶圓W並載置於載置台13，又，舉起載置台13之晶圓W並搬入晶圓載具C。搬送機構11，具有保持晶圓W之保持臂部11a。搬送機構11，可以沿著於晶圓載具C之排列方向(圖中之X方向)上平行延伸之導軌12移動。又，搬送機構11，可以使保持臂部11a在垂直於X方向之方向(圖中之Y方向)及上下方向移動，並且可以使保持臂部11a在水平面內旋轉。 The loading/unloading station S2 has a transport mechanism 11 that carries the wafer W from the wafer carrier C and mounts it on the mounting table 13, and lifts the wafer W of the mounting table 13 and carries the wafer carrier C. The transport mechanism 11 has a holding arm portion 11a that holds the wafer W. The transport mechanism 11 can be moved along the guide rails 12 extending in parallel in the arrangement direction of the wafer carriers C (the X direction in the drawing). Further, the transport mechanism 11 can move the holding arm portion 11a in the direction perpendicular to the X direction (the Y direction in the drawing) and the vertical direction, and can rotate the holding arm portion 11a in the horizontal plane.

液體處理站S3具有：搬送室16，在Y方向上延伸；反轉機構16a，配置於搬送室16內之搬入搬出站S2側；以及複數個液體處理裝置1，配置於搬送室16之兩側。又，搬送室16設有搬送機構14，搬送機構14具有保持晶圓W之保持臂部14a。搬送機構14，可以沿著設於搬送室16且在Y方向上延伸的導軌15移動。又，搬送機構14，可以在X方向上移動保持臂部14a，並使其在水平面內旋轉。搬送機構14在搬入搬出站S2的移交載置台13、反轉機構16a、以及各基板處理單元1之間搬送晶圓W。反轉機構16a，將搬送機構14所搬入的晶圓W上下反轉。晶圓W，在載具站S1的晶圓載具C內，係以電路形成面朝上(正面型(face up))而收納，並在維持電路形成面朝上的狀態下， 從搬送機構11，經由載置台13，再藉由搬送機構14搬送。但是，藉由反轉機構16a，將晶圓W上下反轉，使電路形成面變成朝下(倒裝型(face down))。之後，晶圓W維持在電路形成面朝下的狀態，而由搬送機構14從反轉機構16a取出，藉由搬送機構14而搬送至液體處理裝置1。 The liquid processing station S3 has a transfer chamber 16 extending in the Y direction, a reversing mechanism 16a disposed on the loading/unloading station S2 side in the transfer chamber 16, and a plurality of liquid processing apparatuses 1 disposed on both sides of the transfer chamber 16. . Further, the transfer chamber 16 is provided with a transfer mechanism 14, and the transfer mechanism 14 has a holding arm portion 14a that holds the wafer W. The conveyance mechanism 14 is movable along the guide rail 15 provided in the conveyance chamber 16 and extending in the Y direction. Further, the conveying mechanism 14 can move the holding arm portion 14a in the X direction and rotate it in the horizontal plane. The conveyance mechanism 14 conveys the wafer W between the transfer placement table 13 of the loading/unloading station S2, the reversing mechanism 16a, and each of the substrate processing units 1. The reversing mechanism 16a reverses the wafer W carried in the transport mechanism 14 upside down. The wafer W is housed in the wafer carrier C of the carrier station S1 with the circuit forming surface facing up (face up), and while maintaining the circuit forming surface facing up, The conveyance mechanism 11 is conveyed by the conveyance mechanism 14 via the mounting table 13. However, by the reversing mechanism 16a, the wafer W is reversed upside down, and the circuit formation surface is turned downward (face down). Thereafter, the wafer W is maintained in a state in which the circuit formation surface faces downward, and is taken out from the reversing mechanism 16a by the transport mechanism 14, and transported to the liquid processing apparatus 1 by the transport mechanism 14.

又，在基板處理裝置100，設有控制各種零件及構件的控制部17，基板處理裝置100及液體處理裝置1在控制部17之控制下動作，實施例如後述之液體處理裝置的控制方法。 Further, the substrate processing apparatus 100 is provided with a control unit 17 that controls various components and members. The substrate processing apparatus 100 and the liquid processing apparatus 1 operate under the control of the control unit 17, and a control method of a liquid processing apparatus to be described later is implemented.

在具備上述結構的基板處理裝置100中，搬送機構11從載置於載具站S1之晶圓載具C取出晶圓W，藉由搬送機構11而載置於載置台13。載置台13上的晶圓W，則藉由液體處理站S3內的搬送機構14，搬入反轉機構16a，在此受到上下反轉，再度由搬送機構14搬入至液體處理裝置1。在液體處理裝置1，晶圓W之頂面(與電路形成面相反側的面)由指定之洗淨液加以洗淨，例如以純水將洗淨液沖走，乾燥晶圓W之頂面。當晶圓W頂面乾燥後，晶圓W以與搬入時相反之路徑(步驟)而搬回晶圓載具C。又，在洗淨一片晶圓W之當中，其他晶圓W依序搬送往其他液體處理裝置1，進行洗淨。 In the substrate processing apparatus 100 having the above configuration, the transport mechanism 11 takes out the wafer W from the wafer carrier C placed on the carrier station S1, and mounts it on the mounting table 13 by the transport mechanism 11. The wafer W on the mounting table 13 is carried into the reversing mechanism 16a by the transport mechanism 14 in the liquid processing station S3, and is vertically reversed, and is again carried by the transport mechanism 14 to the liquid processing apparatus 1. In the liquid processing apparatus 1, the top surface of the wafer W (the surface opposite to the circuit formation surface) is washed by a designated cleaning liquid, for example, the cleaning liquid is washed away with pure water, and the top surface of the wafer W is dried. . After the top surface of the wafer W is dried, the wafer W is returned to the wafer carrier C in a path (step) opposite to that at the time of loading. Further, among the wafers W to be cleaned, the other wafers W are sequentially transported to the other liquid processing apparatus 1 and washed.

接著，一邊參考圖2到圖4，一邊說明本發明之實施形態的液體處理裝置1。如圖所示，液體處理裝置1，具備：殼體21，幾近方形；杯體部22，設於殼體21內之幾近中央部，於頂面有開口，略呈圓筒形狀；晶圓保持旋轉部23，配置於杯體部22之內側，可以保持晶圓W並且可以加以旋轉；以及刷頭24，對保持在晶圓保持旋轉部23之晶圓W供給液體，並且與晶圓W之頂面接觸而洗淨晶圓W之頂面。 Next, a liquid processing apparatus 1 according to an embodiment of the present invention will be described with reference to Figs. 2 to 4 . As shown in the figure, the liquid processing apparatus 1 includes a housing 21 which is nearly square. The cup portion 22 is disposed at a nearly central portion of the housing 21 and has an opening on the top surface thereof, which is slightly cylindrical. The circular holding rotating portion 23 is disposed inside the cup portion 22 to hold the wafer W and can be rotated; and the brush head 24 supplies the liquid to the wafer W held by the wafer holding rotating portion 23, and the wafer The top surface of the wafer W is cleaned by contact with the top surface of the W.

在殼體21，形成有搬送口21a，藉由搬送機構14之保持臂部14a(圖1)而將晶圓W搬入殼體21或自殼體21搬出。於搬送口21a，設有未圖示之閘門，於搬入搬出時閘門會開啟，而於處理時閘門會關上，以封閉搬送口21a。 The casing 21 is formed with a conveyance port 21a, and the wafer W is carried into or carried out from the casing 21 by the holding arm portion 14a (FIG. 1) of the conveying mechanism 14. A gate (not shown) is provided in the transfer port 21a, and the gate is opened when loading and unloading, and the gate is closed at the time of processing to close the transfer port 21a.

杯體部22，藉由未圖示之昇降機構，而可以在殼體21內，於圖2中虛線所示之上方位置、以及實線所示之下方位置之間，上下移動。於搬入搬出 晶圓W時，藉由杯體部22位處下方位置，而不會干擾晶圓W之搬入搬出；於處理晶圓W時，藉由杯體部22位處上方位置，而承接對晶圓W所供給之液體，並由未圖示之排液機構排出液體。 The cup body 22 can be moved up and down between the upper position indicated by a broken line in FIG. 2 and the lower position indicated by a solid line in the casing 21 by an elevating mechanism (not shown). Move in and out When the wafer W is disposed, the position of the cup portion 22 is lower than that of the wafer portion 22, and the wafer W is not disturbed. When the wafer W is processed, the wafer is received by the upper portion of the cup portion 22 The liquid supplied by W is discharged from a liquid discharge mechanism (not shown).

參見圖2，晶圓保持旋轉部23具備：旋轉軸23S，連接於配置在殼體21下方之馬達M並且旋轉；以及旋轉板23P，以底面之約略中央部安裝於旋轉軸23S。 Referring to Fig. 2, the wafer holding rotating portion 23 includes a rotating shaft 23S connected to a motor M disposed under the casing 21 and rotated, and a rotating plate 23P attached to the rotating shaft 23S at a substantially central portion of the bottom surface.

於旋轉軸23S，形成有貫通其中央部的導管23C。從導管23C之下端，可以係由例如氮氣供給源供給氮(N2)氣。如後所述，在晶圓保持旋轉部23之旋轉板23P，與晶圓保持旋轉部23所保持的晶圓W之間，形成有空間；經過了導管23C的N2氣體，從導管23C之上端流出至此空間，朝向外周流動。晶圓保持旋轉部23乃至晶圓W一旦旋轉，旋轉板23P與晶圓W之間的空間，相較於晶圓W上方之空間，會成為負壓。如此一來，晶圓W之中心部會撓曲，晶圓W頂面之平坦性會惡化，液體處理之均一性也會有惡化之虞。然而，由於有對該空間供給N2氣體，而可以抑制晶圓W之中心部的撓曲。又，由於係由旋轉板23P與晶圓W之間的空間吹出N2氣體，因此對於供給至晶圓W頂面的液體流竄到底面而附著的情形，可得減少之效果。 A duct 23C penetrating through the center portion thereof is formed in the rotating shaft 23S. From the lower end of the conduit 23C, nitrogen (N 2 ) gas may be supplied from, for example, a nitrogen supply source. As will be described later, a space is formed between the rotating plate 23P of the wafer holding rotating portion 23 and the wafer W held by the wafer holding rotating portion 23; the N 2 gas that has passed through the conduit 23C is from the conduit 23C. The upper end flows out to this space and flows toward the periphery. When the wafer holding rotating portion 23 or the wafer W is rotated, the space between the rotating plate 23P and the wafer W becomes a negative pressure compared to the space above the wafer W. As a result, the center portion of the wafer W is deflected, the flatness of the top surface of the wafer W is deteriorated, and the uniformity of liquid processing is also deteriorated. However, since the N 2 gas is supplied to the space, the deflection of the center portion of the wafer W can be suppressed. Further, since the N 2 gas is blown from the space between the rotating plate 23P and the wafer W, the effect of reducing the adhesion of the liquid supplied to the top surface of the wafer W to the bottom surface can be obtained.

刷頭24係由臂部24A支持，該臂部24A可在水平面內旋動，並可上下移動。在臂部24A內，形成有導管24C，對晶圓W供給之液體就在該導管24C內流動。於臂部24A旋動下降，刷頭24與晶圓W之頂面接觸的同時(或稍早)，來自指定之液體供給源的液體(例如去離子水)，於導管24C內流動，從設於刷頭24根基端之開口24B供給至晶圓W的頂面。藉此，由於刷頭24與晶圓W之頂面接觸，故在洗淨晶圓W之頂面的同時，刷頭24所去除下來的異物或殘留物等可以藉由液體沖走。刷頭24，例如可藉由將複數之塑膠線綑成圓柱狀來構成。塑膠製的線，例如可由：PP(polypropylene，聚丙烯)、PVC(polyvinyl chloride，聚氯乙烯)、胺甲酸乙酯、尼龍製作。 The brush head 24 is supported by an arm portion 24A that is rotatable in a horizontal plane and movable up and down. A duct 24C is formed in the arm portion 24A, and the liquid supplied to the wafer W flows in the duct 24C. When the arm portion 24A is rotated and lowered, and the brush head 24 is in contact with the top surface of the wafer W (or earlier), a liquid (for example, deionized water) from a specified liquid supply source flows in the conduit 24C. The opening 24B at the base end of the brush head 24 is supplied to the top surface of the wafer W. Thereby, since the brush head 24 is in contact with the top surface of the wafer W, the foreign matter or residue removed by the brush head 24 can be washed away by the liquid while cleaning the top surface of the wafer W. The brush head 24 can be constructed, for example, by bundling a plurality of plastic wires into a cylindrical shape. The plastic wire can be made, for example, of PP (polypropylene), PVC (polyvinyl chloride), urethane, or nylon.

參考圖3，旋轉板23P具備圓板形狀，其所具備之外徑，比杯體部22之 內徑小，比晶圓W之外徑大。又，如圖4(a)所示，旋轉板23P具有：晶圓支持部500，其具有沿著外周緣配置之圓環形狀；3個導引腳40，設於晶圓支持部500上，以幾近120°之角度間隔而彼此分離；夾持部23A，推抵著晶圓W的邊緣。導引腳40，藉由朝向旋轉板23P之中心的側面40I(圖4(b))而導引晶圓W的周緣，藉由晶圓支持部500而將晶圓W支持在旋轉板23P上之適切位置上。又，導引腳40所具備的高度，係導引腳40之頂面位於比晶圓支持部500所支持之晶圓W的頂面還要高的位置。由導引腳40所導引，且由晶圓支持部500所支持之晶圓W，受到夾持部23A之夾持。藉此，晶圓W相對於旋轉板23P不會偏移，而可藉由旋轉板23P旋轉。 Referring to FIG. 3, the rotating plate 23P has a circular plate shape, and has an outer diameter which is smaller than that of the cup portion 22. The inner diameter is small and larger than the outer diameter of the wafer W. Further, as shown in FIG. 4(a), the rotating plate 23P has a wafer supporting portion 500 having a circular ring shape arranged along the outer periphery, and three lead pins 40 provided on the wafer supporting portion 500. They are separated from each other at an angular interval of approximately 120°; the nip portion 23A is pushed against the edge of the wafer W. The lead pin 40 guides the periphery of the wafer W by the side surface 40I (FIG. 4(b)) toward the center of the rotating plate 23P, and the wafer W is supported on the rotating plate 23P by the wafer supporting portion 500. The appropriate position. Further, the height of the lead pin 40 is such that the top surface of the lead pin 40 is located higher than the top surface of the wafer W supported by the wafer support unit 500. The wafer W guided by the lead pin 40 and supported by the wafer support portion 500 is sandwiched by the nip portion 23A. Thereby, the wafer W is not displaced with respect to the rotating plate 23P, but can be rotated by the rotating plate 23P.

接著，一邊參考圖5到圖9，一邊說明本發明之另一實施形態的液體處理裝置1。於本實施形態之液體處理裝置1，具有與上述實施形態之晶圓保持旋轉部23相異之晶圓保持旋轉部23。以下，主要針對本實施形態之液體處理裝置1與前述實施形態之液體處理裝置1的相異點，加以說明；至於相同結構之部分，則省略說明。 Next, a liquid processing apparatus 1 according to another embodiment of the present invention will be described with reference to Figs. 5 to 9 . The liquid processing apparatus 1 of the present embodiment has a wafer holding rotating portion 23 that is different from the wafer holding rotating portion 23 of the above-described embodiment. Hereinafter, the difference between the liquid processing apparatus 1 of the present embodiment and the liquid processing apparatus 1 of the above-described embodiment will be mainly described, and the description of the same components will be omitted.

於本實施形態，晶圓保持旋轉部23，具有3個(圖5中僅繪示2個)夾持機構23G，該等夾持機構23G，安裝於旋轉板23P的下方周緣，其藉由推抵晶圓W之邊緣而夾持晶圓W。如圖6所示，前述之3個夾持機構23G彼此間，以例如120°之角度，間隔配置。 In the present embodiment, the wafer holding rotating portion 23 has three (only two of which are shown in FIG. 5) holding mechanisms 23G, and the holding mechanisms 23G are attached to the lower periphery of the rotating plate 23P by pushing The wafer W is held against the edge of the wafer W. As shown in Fig. 6, the three holding mechanisms 23G are disposed at intervals of, for example, an angle of 120°.

再度參看圖5，各夾持機構23G，具有：槓桿構件23L，其藉由旋轉軸23T而可以轉動；以及夾持部23A，其藉由槓桿構件23L往箭頭Y所示方向轉動，而可以接觸晶圓W之邊緣。於各槓桿構件23L之遠端部下方，設有可以使槓桿構件23L之遠端部上下移動之推桿構件43。推桿構件43安裝於臂體42，臂體42藉由昇降機構41(圖5)而上下移動。關於夾持機構23G之動作，容後詳述。 Referring again to Fig. 5, each of the gripping mechanisms 23G has a lever member 23L which is rotatable by a rotation shaft 23T, and a grip portion 23A which is rotatable by a lever member 23L in a direction indicated by an arrow Y to be contacted. The edge of the wafer W. Below the distal end portion of each of the lever members 23L, a pusher member 43 that can move the distal end portion of the lever member 23L up and down is provided. The pusher member 43 is attached to the arm body 42, and the arm body 42 is moved up and down by the elevating mechanism 41 (Fig. 5). The operation of the clamping mechanism 23G will be described in detail later.

又，本實施形態之旋轉板23P具有大致呈圓形的頂面形狀，其周圍形成有缺口部C1及C2。缺口部C1及C2，以幾近60°之角度間隔而交互配置。缺 口部C1，使得安裝於旋轉板23P下方之夾持機構23G之夾持部23A，可以突出至旋轉板23P上方。又，缺口部C2，係對應於設置在搬送機構14之保持臂部14a(圖1)的晶圓保持爪(未圖示)而設，並使晶圓保持爪可以上下穿越旋轉板23P。 Further, the rotary plate 23P of the present embodiment has a substantially circular top surface shape, and cutout portions C1 and C2 are formed around the rotary plate 23P. The notch portions C1 and C2 are alternately arranged at an angular interval of approximately 60°. lack The mouth portion C1 allows the nip portion 23A of the chucking mechanism 23G attached to the lower portion of the rotary plate 23P to protrude above the rotary plate 23P. Further, the notch portion C2 is provided corresponding to the wafer holding claws (not shown) provided in the holding arm portion 14a (FIG. 1) of the conveying mechanism 14, and allows the wafer holding claws to vertically pass through the rotating plate 23P.

又，參考圖7，於旋轉板23P之頂面，設置有沿著周緣延伸的複數個晶圓支持部51。此種晶圓支持部51，可以係配合旋轉板23P的缺口部C1及C2，將前述實施形態的晶圓支持部500切割出缺口而形成。此處省略圖示，晶圓支持部51之兩端，以例如螺絲等安裝於旋轉板23P。藉由以兩端加以固定，可以提高晶圓支持部51的安裝精度。又，各晶圓支持部51，如圖8所示，具有：頂面平坦部51A，以及朝向旋轉板23P之中央傾斜的傾斜面51B。傾斜面51B之外周緣(頂面平坦部51A與傾斜面51B間的境界)，沿著比晶圓W之直徑還大的第1圓之圓周而設置，傾斜面51B的內周緣，以與第1圓同心之圓，沿著比晶圓W之直徑還小的第2圓之圓周而設置。因此，將晶圓W載置於旋轉板23P時，晶圓W，藉由其邊緣與傾斜面51B接觸而受到支持(請參考圖8)。此時，晶圓W，係與旋轉板23P的頂面分開。 Further, referring to Fig. 7, a plurality of wafer support portions 51 extending along the periphery are provided on the top surface of the rotary plate 23P. The wafer support portion 51 can be formed by cutting the notch portions C1 and C2 of the rotary plate 23P and cutting the wafer support portion 500 of the above-described embodiment. Although not shown in the figure, both ends of the wafer support portion 51 are attached to the rotary plate 23P by, for example, a screw. By fixing at both ends, the mounting accuracy of the wafer support portion 51 can be improved. Further, as shown in FIG. 8, each wafer supporting portion 51 has a top surface flat portion 51A and an inclined surface 51B that is inclined toward the center of the rotating plate 23P. The outer periphery of the inclined surface 51B (the boundary between the top flat portion 51A and the inclined surface 51B) is provided along the circumference of the first circle larger than the diameter of the wafer W, and the inner circumference of the inclined surface 51B is A circle of concentric circles is provided along the circumference of the second circle which is smaller than the diameter of the wafer W. Therefore, when the wafer W is placed on the rotating plate 23P, the wafer W is supported by the contact of the edge with the inclined surface 51B (please refer to FIG. 8). At this time, the wafer W is separated from the top surface of the rotating plate 23P.

又，於晶圓支持部51的頂面平坦部51A，設有導引腳52。導引腳52的側面52I，以其下端與晶圓支持部51之傾斜面51B的外周緣相接。又，導引腳52，形成有朝向旋轉板23P之中央而傾斜的導引傾斜面52B。將晶圓W從保持臂部14a(圖1)載置至晶圓支持部51時，晶圓W的邊緣一旦與導引傾斜面52B接觸，就會受到導引而使晶圓W的邊緣順著導引傾斜面52B滑落，帶動晶圓W之移動，藉此晶圓W得以定位，而由晶圓支持部51所支持。 Further, a lead pin 52 is provided on the top flat portion 51A of the wafer support portion 51. The side surface 52I of the lead pin 52 is connected at its lower end to the outer peripheral edge of the inclined surface 51B of the wafer support portion 51. Further, the lead pin 52 is formed with a guide inclined surface 52B that is inclined toward the center of the rotating plate 23P. When the wafer W is placed on the wafer supporting portion 51 from the holding arm portion 14a (FIG. 1), once the edge of the wafer W comes into contact with the guiding inclined surface 52B, it is guided to make the edge of the wafer W smooth. The guide inclined surface 52B slides down to drive the movement of the wafer W, whereby the wafer W is positioned and supported by the wafer support portion 51.

另外，導引腳52所具備之高度，係導引腳52之頂面，位處在比複數晶圓支持部51所支持之晶圓W的頂面還要高的位置。 Further, the height of the lead pin 52 is the top surface of the lead pin 52, and the position is higher than the top surface of the wafer W supported by the plurality of wafer supporting portions 51.

又，如圖7所示，設於晶圓支持部51的導引腳52，與夾持機構23G的夾持部23A，在幾近中央部，形成有沿著與旋轉板23之周緣交叉的方向延伸的溝部G。當液體供給至晶圓支持部51B所支持之晶圓W的頂面時，該液體會經過溝部G，而可以向晶圓W之外部排出。因此，可減少液體滯留在導引腳 52或夾持部23A之部分的情形，可以減少因液體滯留所可能產生之水痕發生。 Further, as shown in FIG. 7, the lead pin 52 provided in the wafer support portion 51 and the sandwiching portion 23A of the clamp mechanism 23G are formed to intersect the peripheral edge of the rotary plate 23 at a substantially central portion. The groove portion G extending in the direction. When the liquid is supplied to the top surface of the wafer W supported by the wafer support portion 51B, the liquid passes through the groove portion G and can be discharged to the outside of the wafer W. Therefore, liquid retention can be reduced at the lead In the case of 52 or a portion of the grip portion 23A, it is possible to reduce the occurrence of water marks which may occur due to liquid retention.

接著，一邊參考圖9，一邊說明夾持機構23G的功能。圖9係沿著圖7之I一I線的局部剖面圖。又，圖9(a)顯示出例如將晶圓W配置於旋轉板23P上，緊接在那之後的晶圓W與夾持機構23G。如圖所示，藉由圖7(a)中虛線所示之晶圓支持部51的傾斜面51B，以支持晶圓W的邊緣。此時，藉由昇降機構41(圖5)，臂體42往上方移動，推桿構件43將夾持機構23G之槓桿構件23L之遠端往上方推上去。因此，設置於槓桿構件23L之另一端(以旋轉軸23T所支持之端部)的夾持部23A，往外部傾斜。在此，如圖9(b)所示，臂體42一往下方移動，槓桿構件23L藉由設於旋轉板23P之底面的偏壓構件23B以及自己本身的重量，而以旋轉軸23T為中心，順時針旋轉。夾持部23A受其帶動，推抵晶圓W之邊緣。藉由3個夾持機構23G的夾持部23A推抵邊緣，以夾持晶圓W。在此狀態下，馬達M(圖5)一旦旋轉，旋轉板23P，以及安裝在其上的夾持機構23G就會旋轉，而在旋轉板23P上由晶圓支持部51B支持之下，夾持機構23G所夾持的晶圓W就會旋轉。 Next, the function of the chucking mechanism 23G will be described with reference to Fig. 9 . Figure 9 is a partial cross-sectional view taken along line I-I of Figure 7. Further, Fig. 9(a) shows, for example, the wafer W disposed on the rotating plate 23P, and the wafer W and the chucking mechanism 23G immediately after that. As shown in the figure, the inclined surface 51B of the wafer supporting portion 51 shown by the broken line in Fig. 7(a) is used to support the edge of the wafer W. At this time, the arm body 42 is moved upward by the elevating mechanism 41 (FIG. 5), and the pusher member 43 pushes up the distal end of the lever member 23L of the gripping mechanism 23G upward. Therefore, the nip portion 23A provided at the other end of the lever member 23L (the end portion supported by the rotation shaft 23T) is inclined to the outside. Here, as shown in FIG. 9(b), the arm body 42 is moved downward, and the lever member 23L is centered on the rotating shaft 23T by the biasing member 23B provided on the bottom surface of the rotating plate 23P and its own weight. ,clockwise rotation. The nip portion 23A is driven to push against the edge of the wafer W. The wafer W is held by the nip portion 23A of the three clamping mechanisms 23G pushing against the edge. In this state, once the motor M (Fig. 5) is rotated, the rotary plate 23P, and the clamp mechanism 23G mounted thereon are rotated, and are supported by the wafer support portion 51B on the rotary plate 23P, and held. The wafer W held by the mechanism 23G is rotated.

接著，針對本發明之實施形態的液體處理裝置1的動作(液體處理裝置之控制方法)，適度參考前文中所參考過的圖式，加以說明。又，於以下，係以參考圖5到圖9而說明過的液體處理裝置1為例進行說明。又，如上所述，晶圓W係藉由液體處理站S3的反轉機構16a而上下反轉，並在晶圓W之電路形成面朝下的狀態下，搬入液體處理裝置1。於以下的說明中，提到晶圓W之頂面時，係意指與晶圓W之電路形成面相反側的面。 Next, the operation of the liquid processing apparatus 1 (the method of controlling the liquid processing apparatus) according to the embodiment of the present invention will be described with reference to the drawings referred to in the foregoing. In the following description, the liquid processing apparatus 1 described with reference to FIGS. 5 to 9 will be described as an example. Further, as described above, the wafer W is vertically inverted by the reversing mechanism 16a of the liquid processing station S3, and is carried into the liquid processing apparatus 1 while the circuit forming surface of the wafer W faces downward. In the following description, when referring to the top surface of the wafer W, it means a surface on the opposite side to the circuit forming surface of the wafer W.

首先，杯體部22下降到圖5中實線所示之下方位置，又，藉由昇降機構41而使臂體42及推桿構件43往上方移動，將夾持機構23的槓桿構件23L推上去。藉此，夾持部23A朝外側打開，確保載置晶圓W的空間。 First, the cup portion 22 is lowered to the lower position shown by the solid line in Fig. 5, and the arm member 42 and the pusher member 43 are moved upward by the elevating mechanism 41, and the lever member 23L of the chucking mechanism 23 is pushed. Go up. Thereby, the nip portion 23A is opened to the outside, and the space on which the wafer W is placed is secured.

接著，殼體21之搬送口21a會開啟，藉由搬送機構14之保持臂部14a，將晶圓W從搬送口21a搬入殼體21內，在晶圓保持旋轉部23上方停止。接著，保持臂部14a會下降，晶圓W就從保持臂部14a移交至晶圓保持旋轉部23。此 時，晶圓W藉由導引腳52之導引，而由設於旋轉板23P周緣之頂面的晶圓支持部51所支持。具體而言，藉由使晶圓W的邊緣橫跨晶圓支持部51的所有傾斜面51B(圖7，圖8)而與傾斜面51B接觸，以支持晶圓W。 Then, the conveyance port 21a of the casing 21 is opened, and the wafer W is carried into the casing 21 from the conveyance port 21a by the holding arm portion 14a of the conveyance mechanism 14, and is stopped above the wafer holding rotation portion 23. Then, the holding arm portion 14a is lowered, and the wafer W is transferred from the holding arm portion 14a to the wafer holding rotating portion 23. this At the time, the wafer W is guided by the lead pin 52 and supported by the wafer support portion 51 provided on the top surface of the peripheral edge of the rotary plate 23P. Specifically, the wafer W is supported by bringing the edge of the wafer W across the inclined surface 51B (FIG. 7, FIG. 8) of the wafer support portion 51 to the inclined surface 51B.

保持臂部14a從搬送口21a退出到外部後，透過昇降機構41(圖5)而使臂體42及推桿構件43移動至下方，藉此，槓桿構件23L會轉動，其結果，夾持部23A會抵住晶圓W的邊緣。藉此，在由晶圓支持部51所支持的狀態下，晶圓W會由夾持機構23G所夾持。一旦杯體部22位於圖5所示之上方位置，就會透過馬達M而開始旋轉軸23S及旋轉板23P之旋轉。藉此，由晶圓支持部51所支持並由夾持機構23所夾持的晶圓W也會旋轉。晶圓W之旋轉速度，例如可以係每分鐘旋轉(rpm)500到2000rpm。此時，從旋轉軸23S內所形成的導管23C，會對晶圓W與旋轉板23P之間的空間供給例如N2氣體。 After the arm portion 14a is withdrawn from the transport port 21a to the outside, the arm member 42 and the pusher member 43 are moved downward by the elevating mechanism 41 (FIG. 5), whereby the lever member 23L is rotated, and as a result, the grip portion is moved. 23A will resist the edge of wafer W. Thereby, the wafer W is sandwiched by the chucking mechanism 23G in a state supported by the wafer support unit 51. Once the cup portion 22 is located at the upper position shown in FIG. 5, the rotation of the rotating shaft 23S and the rotating plate 23P is started by the motor M. Thereby, the wafer W supported by the wafer supporting portion 51 and held by the chucking mechanism 23 also rotates. The rotational speed of the wafer W can be, for example, 500 to 2000 rpm per minute (rpm). At this time, for example, N 2 gas is supplied to the space between the wafer W and the rotating plate 23P from the duct 23C formed in the rotating shaft 23S.

接著，刷頭24之臂部24A旋動，刷頭24移動到圖5中虛線所示位置，朝向晶圓W之頂面下降。刷頭24的前端與晶圓W之頂面接觸之同時(或就在接觸之前)，從刷頭24之開口部24B供給例如DIW(去離子水)。該DIW，藉由晶圓W之旋轉，而在晶圓W之頂面上，朝向晶圓W之邊緣擴散，從晶圓W之邊緣流出至外部。 Next, the arm portion 24A of the brush head 24 is rotated, and the brush head 24 is moved to the position shown by the broken line in Fig. 5, and is lowered toward the top surface of the wafer W. When the leading end of the brush head 24 is in contact with the top surface of the wafer W (or just before the contact), for example, DIW (deionized water) is supplied from the opening portion 24B of the head 24. The DIW is spread toward the edge of the wafer W on the top surface of the wafer W by the rotation of the wafer W, and flows out from the edge of the wafer W to the outside.

之後，刷頭24，藉由臂部24A之旋動，朝向晶圓W之邊緣移動。藉由晶圓W之旋轉與刷頭24之移動，刷頭24接觸晶圓W之整面，同時藉由刷頭24去除之異物或雜質，會由DIW沖走。 Thereafter, the brush head 24 is moved toward the edge of the wafer W by the rotation of the arm portion 24A. By the rotation of the wafer W and the movement of the brush head 24, the brush head 24 contacts the entire surface of the wafer W, while the foreign matter or impurities removed by the brush head 24 are washed away by the DIW.

刷頭24，從晶圓W的邊緣往外移動後，就停止DIW之供給，同時乾燥晶圓W的頂面。之後，藉由與搬入晶圓W時之步驟相反的步驟，而將晶圓W搬出至殼體21的外部。 After the brush head 24 is moved outward from the edge of the wafer W, the supply of the DIW is stopped and the top surface of the wafer W is dried. Thereafter, the wafer W is carried out to the outside of the casing 21 by a step reverse to the step of loading the wafer W.

如以上之說明，藉由本發明之實施形態的液體處理裝置1，當晶圓W從搬送臂14a(圖1)移交到晶圓保持旋轉部23的時候，晶圓W係由導引腳52所導引，並以晶圓W的邊緣與旋轉板23P上之晶圓支持部51的傾斜面51B接觸的方式，受到支持。當旋轉板23P旋轉，刷頭24下降，同時液體從刷頭24的開口供給到晶圓W上，液體會在晶圓W的頂面朝外部擴散而流動。此時， 由於晶圓W的邊緣與晶圓支持部51之傾斜面51B接觸，因此可以抑制液體附著至晶圓W底面的情形。 As described above, in the liquid processing apparatus 1 according to the embodiment of the present invention, when the wafer W is transferred from the transfer arm 14a (FIG. 1) to the wafer holding rotating portion 23, the wafer W is guided by the lead 52. The guide is supported so that the edge of the wafer W comes into contact with the inclined surface 51B of the wafer support portion 51 on the rotary plate 23P. When the rotary plate 23P is rotated, the brush head 24 is lowered, and liquid is supplied from the opening of the brush head 24 to the wafer W, and the liquid diffuses and flows outward on the top surface of the wafer W. at this time, Since the edge of the wafer W is in contact with the inclined surface 51B of the wafer support portion 51, it is possible to suppress the adhesion of liquid to the bottom surface of the wafer W.

例如如圖10(a)所示，當係沿著旋轉板23P之周向的晶圓支持部51'及導引腳52'的長度幾乎相等的情形(晶圓支持部51'並非在導引腳52'之兩側方向延伸之情形)，在晶圓W頂面流動的液體，會衝撞導引腳52之側面52I並飛散，而從旋轉板23P與晶圓W之間隙流竄到晶圓W的底面，附著於晶圓W之底面(請參考圖中箭頭A')。一旦晶圓W之底面附著了液體，液體中的異物會有殘存在晶圓W底面之虞。晶圓W底面的異物，有時會導致如下情形：在接下來晶圓W所搬送到的半導體製造裝置污染其晶圓支持部，或是在晶圓載具內污染相鄰的其他晶圓之表面。另一方面，在晶圓W之頂面，由於存在有於頂面流動之液體的液膜，所以液體中的異物，不易殘存在晶圓W的頂面。 For example, as shown in FIG. 10(a), when the lengths of the wafer supporting portion 51' and the lead pin 52' along the circumferential direction of the rotating plate 23P are almost equal (the wafer supporting portion 51' is not guided When the legs 52' extend in the direction of both sides, the liquid flowing on the top surface of the wafer W will collide with the side surface 52I of the lead pin 52 and scatter, and flow from the gap between the rotating plate 23P and the wafer W to the wafer W. The bottom surface is attached to the bottom surface of the wafer W (refer to arrow A' in the figure). Once the liquid adheres to the bottom surface of the wafer W, foreign matter in the liquid may remain on the bottom surface of the wafer W. The foreign matter on the bottom surface of the wafer W may sometimes cause the semiconductor manufacturing device transported by the wafer W to contaminate the wafer support portion or contaminate the surface of the adjacent other wafer in the wafer carrier. . On the other hand, on the top surface of the wafer W, since there is a liquid film of the liquid flowing on the top surface, foreign matter in the liquid does not easily remain on the top surface of the wafer W.

然而，在本發明的實施形態，晶圓支持部51比導引腳52還長，就連於導引腳52之側方，晶圓W的邊緣亦與晶圓支持部51之傾斜面51B接觸。再者，晶圓支持部51，設置成與旋轉板23P之間不會形成間隙。因此，如圖10(b)所示，可以抑制衝撞導引腳52側面52I而飛散的液體流竄到晶圓W之底面並附著的情形。亦即，若依據本發明之實施形態，可以降低前述污染。又，藉由在晶圓支持部51的傾斜面51B之外周具備頂面平坦部51A，在晶圓W頂面流動的液體，其流動可以毫不失序地流出至晶圓W外部。又，藉由使晶圓支持部51的長度較長，可以使導管23C對晶圓W與旋轉板23P之間供給之N2從空間吹出的部分變窄，得以加快N2的流速。藉此，即使是晶圓W之邊緣未與傾斜面51B接觸的部分，也可以防止液體流竄到晶圓W的底面並附著的情形。 However, in the embodiment of the present invention, the wafer supporting portion 51 is longer than the guiding pin 52 and is connected to the side of the guiding pin 52, and the edge of the wafer W is also in contact with the inclined surface 51B of the wafer supporting portion 51. . Further, the wafer supporting portion 51 is provided so as not to form a gap with the rotating plate 23P. Therefore, as shown in FIG. 10(b), it is possible to suppress the flow of the liquid scattered on the side surface 52I of the guide pin 52 to the bottom surface of the wafer W and to adhere thereto. That is, according to the embodiment of the present invention, the aforementioned contamination can be reduced. Further, by providing the top surface flat portion 51A on the outer circumference of the inclined surface 51B of the wafer support portion 51, the liquid flowing on the top surface of the wafer W can flow out to the outside of the wafer W without disorder. Further, by making the length of the wafer supporting portion 51 long, the portion of the conduit 23C that blows N 2 supplied from the space between the wafer W and the rotating plate 23P can be narrowed, and the flow velocity of N 2 can be increased. Thereby, even in a portion where the edge of the wafer W is not in contact with the inclined surface 51B, it is possible to prevent the liquid from flowing to the bottom surface of the wafer W and adhering thereto.

又，就液體處理裝置1之效果而言，已在前文中以參考圖5到圖9所說明之液體處理裝置1為例進行過說明，但在參考圖2到圖4而說明之液體處理裝置1中也一樣，液體會在晶圓W之頂面流動，抑制衝撞到導引部40而附著於晶圓W背面的情形，因此也可以得到相同的效果。 Further, as for the effect of the liquid processing apparatus 1, the liquid processing apparatus 1 described above with reference to FIGS. 5 to 9 has been described as an example, but the liquid processing apparatus described with reference to FIGS. 2 to 4 In the same manner as in the case of 1, the liquid flows on the top surface of the wafer W, and the collision with the guide portion 40 is suppressed to adhere to the back surface of the wafer W. Therefore, the same effect can be obtained.

又，於參考圖5到圖9而說明之液體處理裝置1，藉由傾斜面51B而在較大的範圍支持著晶圓W的邊緣，因此可以減少晶圓W的翹曲。將用以確認晶圓W之翹曲減少而進行之實驗的結果，示於圖11。圖11(a)係用以比較者，所示內容係將圖10(a)所示之晶圓支持部51'及導引腳52'，以約120°的角度間隔設置3個時，以刷頭24洗淨晶圓W之頂面後的異物分佈圖；圖11(b)所示內容，係本發明之實施形態的液體處理裝置1(從圖5到圖9)之刷頭24洗淨晶圓W頂面後的異物分佈圖。 Moreover, the liquid processing apparatus 1 described with reference to FIGS. 5 to 9 supports the edge of the wafer W in a large range by the inclined surface 51B, so that the warpage of the wafer W can be reduced. The result of the experiment conducted to confirm the decrease in warpage of the wafer W is shown in FIG. Fig. 11(a) is for comparison, and the content shown is that when the wafer support portion 51' and the lead pin 52' shown in Fig. 10(a) are arranged at an angular interval of about 120 degrees, The foreign matter distribution diagram after the brush head 24 washes the top surface of the wafer W; the content shown in FIG. 11(b) is the brush head 24 of the liquid processing apparatus 1 (from FIG. 5 to FIG. 9) according to the embodiment of the present invention. The distribution of foreign matter after the top surface of the net wafer W.

由圖11(a)可知，雖然在略呈三葉形狀的範圍內，異物較少，但在該範圍之外側，卻有大量的異物。推測此種分佈，係由於下述原因而產生：亦即，晶圓W之邊緣中，由短的晶圓支持部所支持的部分，晶圓W幾乎不會翹曲，因此刷頭24可充分按壓以減少異物，然而相對於此，於該部分之間的區域，晶圓W會有較大的翹曲，因此刷頭24對於旋轉之晶圓W的頂面之按壓力，在全周面上並非固定，無法充分減少異物。 As can be seen from Fig. 11(a), although the foreign matter is small in the range of the slightly triangular shape, there are a large amount of foreign matter on the outer side of the range. It is presumed that such a distribution is caused by the fact that, in the edge of the wafer W, the portion supported by the short wafer support portion, the wafer W hardly warps, so the brush head 24 can be sufficiently Pressing to reduce foreign matter, but in contrast, the wafer W has a large warpage in the region between the portions, so the pressing force of the brush head 24 on the top surface of the rotating wafer W is on the entire circumference. It is not fixed and cannot completely reduce foreign matter.

另一方面，於本發明之實施形態的液體處理裝置1，如圖11(b)所示，於晶圓W的頂面全體，異物都同樣地少。推測其原因，是由於晶圓W之邊緣由傾斜面51B支持著較大的範圍，因此晶圓W的平坦性良好之故。更進一步地，藉由傾斜面51B而在較大的範圍支持著晶圓W的邊緣，因此刷頭24之按壓力所對晶圓W施加的力量可以得到分散，而得以抑制在晶圓W的邊緣產生損傷的情形。 On the other hand, in the liquid processing apparatus 1 according to the embodiment of the present invention, as shown in FIG. 11(b), foreign matter is similarly small in the entire top surface of the wafer W. The reason is presumed to be because the edge of the wafer W is supported by the inclined surface 51B in a large range, so that the flatness of the wafer W is good. Further, the edge of the wafer W is supported in a larger range by the inclined surface 51B, so that the pressing force applied to the wafer W by the pressing force of the brush head 24 can be dispersed and suppressed on the wafer W. The situation where the edge is damaged.

又，在參考圖2到圖4所說明之液體處理裝置1中，晶圓W也係沿著周緣而在較大的範圍受到支持，因此亦可得與上述相同之減少異物的效果。 Further, in the liquid processing apparatus 1 described with reference to Figs. 2 to 4, the wafer W is also supported over a wide range along the circumference, and therefore the same effect of reducing foreign matter as described above can be obtained.

以上，參酌實施形態而對本發明進行說明，但本發明並不限定於上述實施形態，可參照所附之專利申請範圍，進行各種變形或變更。 The present invention has been described above with reference to the embodiments, but the present invention is not limited to the embodiments described above, and various modifications and changes can be made without departing from the scope of the appended claims.

例如，在上述實施形態中，係針對於液體處理裝置1設有刷頭24，並以 刷頭24洗淨晶圓W之頂面的情形加以說明，但並不限定於使用刷頭24之洗淨。例如，亦可設置清淨氣體用的導管、以及去離子水(DIW)用的導管，而在液體處理裝置1設置藉由清淨氣體來噴射DIW噴霧的二流體噴嘴，藉此以取代刷頭24，處理晶圓W之頂面。當然，使用僅供給液體之液體供給噴嘴亦無妨。 For example, in the above embodiment, the brush head 24 is provided for the liquid processing apparatus 1, and The case where the brush head 24 washes the top surface of the wafer W will be described, but the cleaning is not limited to the use of the brush head 24. For example, a conduit for a clean gas and a conduit for deionized water (DIW) may be provided, and in the liquid treatment device 1, a two-fluid nozzle that sprays a DIW spray by a clean gas is provided, thereby replacing the brush head 24, The top surface of the wafer W is processed. Of course, it is also possible to use a liquid supply nozzle that supplies only liquid.

再者，亦可使用裝設有超音波振盪子的液體供給噴嘴，以取代刷頭24或二流體噴嘴等(該超音波振盪子係裝設於噴吐液體至晶圓W頂面之噴吐部)。若使用該液體供給噴嘴，藉由超音波振盪子所發出之例如15~400kHz的千赫頻帶、或是1.5MHz或3.0MHz的兆赫頻帶之高頻率，而在液體中有微細之氣泡產生、破裂，促進液體分子之振盪，因此可以提高液體處理效率、洗淨效率。 Further, a liquid supply nozzle equipped with an ultrasonic oscillator may be used instead of the brush head 24 or the two-fluid nozzle (the ultrasonic oscillator is mounted on the ejection portion of the ejection liquid to the top surface of the wafer W). . If the liquid supply nozzle is used, fine bubbles are generated and ruptured in the liquid by a high frequency such as a kilohertz band of 15 to 400 kHz or a megahertz band of 1.5 MHz or 3.0 MHz which is emitted by the ultrasonic oscillator. It promotes the oscillation of liquid molecules, thereby improving liquid handling efficiency and washing efficiency.

又，於上述之實施形態，對於晶圓W，係藉由旋轉板23P上的晶圓支持部51，以晶圓W中的電路形成面朝下(倒裝型)的方式加以支持，但於本發明之實施形態的液體處理裝置1，亦可係將電路形成面朝上(正面型)的方式保持晶圓W，例如使用二流體噴嘴處理電路形成面。即使在此情形，也可以避免液體附著至晶圓W之底面，因此可以減少底面之異物。 Further, in the above-described embodiment, the wafer W is supported by the wafer supporting portion 51 on the rotating plate 23P so that the circuit forming surface of the wafer W faces downward (flip-chip type). In the liquid processing apparatus 1 according to the embodiment of the present invention, the wafer W may be held such that the circuit forming surface faces upward (front side), and the surface is formed by, for example, a two-fluid nozzle processing circuit. Even in this case, it is possible to prevent the liquid from adhering to the bottom surface of the wafer W, so that the foreign matter on the bottom surface can be reduced.

於上述之實施形態，在旋轉板23P設有缺口部C2，但缺口部C2之設置僅係用以對應在液體處理裝置1的殼體21內搬送晶圓W之搬送臂部14a的晶圓保持爪，並非不可或缺之結構。例如，在搬送臂部14a與晶圓保持旋轉部23之間移交晶圓W時，若是使用貫穿旋轉板23P而上下移動之3個昇降銷之情形，則搬送臂部14a不需要晶圓保持爪，因此，也就不需要在旋轉板23P形成缺口部C2。 In the above embodiment, the notch portion C2 is provided in the rotary plate 23P, but the notch portion C2 is provided only for the wafer holding of the transfer arm portion 14a for transporting the wafer W in the casing 21 of the liquid processing apparatus 1. Claws are not indispensable structures. For example, when the wafer W is transferred between the transfer arm portion 14a and the wafer holding rotary portion 23, the transfer arm portion 14a does not require the wafer holding claw when the three lift pins are moved up and down through the rotary plate 23P. Therefore, it is not necessary to form the notch portion C2 in the rotary plate 23P.

又，晶圓支持部51的形狀，並不限定於圖示者，亦可作種種變形。如圖12所示，例如配置在旋轉板23P上的晶圓支持部51，亦可沿著旋轉板23P之旋轉方向，在前端側具備銳角形狀。如此一來，可以預防隨著旋轉板23P之旋轉而引起之晶圓支持部51造成的亂流，因此可以使晶圓W頂面的液體 流向外部而不飛散。 Further, the shape of the wafer support portion 51 is not limited to those shown in the drawings, and various modifications are possible. As shown in FIG. 12, for example, the wafer support portion 51 disposed on the rotary plate 23P may have an acute-angle shape on the distal end side along the rotation direction of the rotary plate 23P. In this way, turbulence caused by the wafer support portion 51 caused by the rotation of the rotating plate 23P can be prevented, so that the liquid on the top surface of the wafer W can be made. Flow to the outside without scattering.

又，晶圓支持部51，以及夾持機構23G的夾持部23A之間的間隔，能設置得越窄越好。如此一來，液體在晶圓W的頂面流動，衝撞夾持部23A，而從晶圓支持部51與夾持部23A之間鑽進去，附著在晶圓W的底面的情形，就可以減少。因此，在晶圓W底面邊緣附近產生異物的情形，可更有效地減少。又，由於在晶圓W之頂面，形成有液體形成的液膜，所以異物幾乎不會殘存在晶圓W的頂面上。 Moreover, the interval between the wafer support portion 51 and the sandwiching portion 23A of the clamp mechanism 23G can be set as narrow as possible. As a result, the liquid flows on the top surface of the wafer W, collides with the nip portion 23A, and is drilled between the wafer support portion 51 and the nip portion 23A, and adheres to the bottom surface of the wafer W, thereby reducing the liquid. . Therefore, the occurrence of foreign matter in the vicinity of the edge of the bottom surface of the wafer W can be more effectively reduced. Further, since a liquid film formed of a liquid is formed on the top surface of the wafer W, foreign matter hardly remains on the top surface of the wafer W.

又，於上述之實施形態，係以夾持機構23G之夾持部23A推抵晶圓W之邊緣以夾持晶圓W，但若係一邊以低速(例如10rpm到50rpm之程度)旋轉晶圓W、一邊對晶圓W之頂面供給DIW以洗淨頂面等情形，則不需要夾持機構23G之夾持，因此，液體處理裝置1亦可不設置夾持機構23G。 Further, in the above embodiment, the nip portion 23A of the chucking mechanism 23G is pressed against the edge of the wafer W to sandwich the wafer W, but the wafer is rotated at a low speed (for example, 10 rpm to 50 rpm). W. When the DIW is supplied to the top surface of the wafer W to wash the top surface, the clamping mechanism 23G is not required. Therefore, the liquid processing apparatus 1 may not be provided with the clamping mechanism 23G.

又，於上述之實施形態，雖設有6個晶圓支持部51，然而並不限定於此，亦可設置所需數量之晶圓支持部51。又，亦可在旋轉板23P上相鄰之2個晶圓支持部51之間，沿著旋轉板23P周緣(包含缺口部C2)設置***部。在此情形，***部之高度，較佳係小於晶圓支持部51所支持之晶圓W與旋轉板23P之間的間隔。藉此，***部與晶圓W之間的間隔，會比晶圓W與旋轉板23P之間的間隔還窄，所以在晶圓W與旋轉板23P之間的空間流動之N2氣體，能更加高速地吹出。因此，液體在2個晶圓支持部51之間的晶圓W底面附著的情形，可以減少。 Further, in the above embodiment, the six wafer supporting portions 51 are provided. However, the present invention is not limited thereto, and a desired number of wafer supporting portions 51 may be provided. Further, a ridge portion may be provided along the peripheral edge (including the notch portion C2) of the rotating plate 23P between the adjacent two wafer supporting portions 51 on the rotating plate 23P. In this case, the height of the ridge portion is preferably smaller than the interval between the wafer W supported by the wafer support portion 51 and the rotating plate 23P. Thereby, the interval between the ridge portion and the wafer W is narrower than the interval between the wafer W and the rotating plate 23P, so that the N 2 gas flowing in the space between the wafer W and the rotating plate 23P can Blow out at a higher speed. Therefore, the case where the liquid adheres to the bottom surface of the wafer W between the two wafer supporting portions 51 can be reduced.

又，於上述之實施形態，係以對半導體晶圓進行液體處理的情形為例，進行說明，但在對FPD(平面顯示器)用之玻璃基板進行液體處理之情形，亦可適用本發明。 Further, in the above-described embodiment, the case where the semiconductor wafer is subjected to liquid processing will be described as an example. However, the present invention can also be applied to the case where the glass substrate for the FPD (planar display) is subjected to liquid treatment.

1‧‧‧液體處理裝置 1‧‧‧Liquid handling device

21‧‧‧殼體 21‧‧‧ housing

21a‧‧‧搬送口 21a‧‧‧Transportation port

22‧‧‧杯體部 22‧‧‧ cup body

23A‧‧‧夾持部 23A‧‧‧ gripping department

23P‧‧‧旋轉板 23P‧‧‧Rotating plate

23S‧‧‧旋轉軸 23S‧‧‧Rotary axis

42‧‧‧臂體 42‧‧‧Body

43‧‧‧推桿構件 43‧‧‧Push member

51‧‧‧晶圓支持部 51‧‧‧ Wafer Support Department

52‧‧‧導引腳 52‧‧‧ Lead pin

C1‧‧‧缺口部 C1‧‧‧Gap section

C2‧‧‧缺口部 C2‧‧‧ gap

W‧‧‧晶圓 W‧‧‧ wafer

Claims (16)

一種液體處理裝置，包括：旋轉板，藉由旋轉驅動部加以旋轉；基板支持部，沿著該旋轉板之周緣設置，支持基板的周緣；導引部，設於該基板支持部的上端，且相較於藉由該基板支持部支持該周緣之該基板的表面，具有更高的高度，將該基板導引至該基板支持部；供給部，對於由該基板支持部支持該周緣之該基板，從上方供給液體；以及夾持部，設於該旋轉板之周緣，藉由推抵該基板而夾持該基板；該基板支持部與該導引部沿著該旋轉板之周緣設置於一個該夾持部的兩側，由該夾持部與該基板支持部及該導引部所構成之群組，沿著該旋轉板的周向至少設置3個以上。 A liquid processing apparatus comprising: a rotating plate rotated by a rotary driving portion; a substrate supporting portion disposed along a circumference of the rotating plate to support a periphery of the substrate; and a guiding portion disposed at an upper end of the substrate supporting portion, and Comparing the surface of the substrate supporting the periphery by the substrate supporting portion to a higher height, guiding the substrate to the substrate supporting portion; the supplying portion for the substrate supporting the periphery by the substrate supporting portion a liquid is supplied from above; and a clamping portion is disposed on a periphery of the rotating plate to sandwich the substrate by pushing against the substrate; the substrate supporting portion and the guiding portion are disposed along a circumference of the rotating plate The both sides of the holding portion are provided at least three or more along the circumferential direction of the rotating plate by the group of the holding portion and the substrate supporting portion and the guiding portion. 如申請專利範圍第1項之液體處理裝置，其中，該基板支持部之沿著該旋轉板周向的長度，比該導引部之沿著該旋轉板周向的長度更長。 The liquid processing apparatus according to claim 1, wherein a length of the substrate supporting portion along a circumferential direction of the rotating plate is longer than a length of the guiding portion along a circumferential direction of the rotating plate. 如申請專利範圍第1或2項之液體處理裝置，其中，該基板支持部，與該旋轉板之間不形成間隙。 The liquid processing apparatus according to claim 1 or 2, wherein the substrate supporting portion does not form a gap with the rotating plate. 如申請專利範圍第1或2項之液體處理裝置，其中，該基板支持部，具有朝向該旋轉板之中心的方向傾斜之傾斜面。 The liquid processing apparatus according to claim 1 or 2, wherein the substrate supporting portion has an inclined surface that is inclined toward a direction of a center of the rotating plate. 如申請專利範圍第1或2項之液體處理裝置，其中，該基板支持部，於該傾斜面之外周具有頂面平坦部。 The liquid processing apparatus according to claim 1 or 2, wherein the substrate supporting portion has a top surface flat portion on the outer circumference of the inclined surface. 如申請專利範圍第1或2項之液體處理裝置，其中，該導引部，具有朝向該旋轉板之中心的方向傾斜之導引面。 The liquid processing apparatus according to claim 1 or 2, wherein the guiding portion has a guiding surface that is inclined toward a direction of a center of the rotating plate. 如申請專利範圍第1或2項之液體處理裝置，其中，該旋轉板及該基板支持部具有第1缺口部，該第1缺口部所設置之位置，係對應於在與該基板支持部之間用來接收或遞交該基板之搬送臂所具 備之保持該基板用之基板保持爪，以供該晶圓保持爪上下穿越。 The liquid processing apparatus according to claim 1 or 2, wherein the rotating plate and the substrate supporting portion have a first notch portion, and the first notch portion is disposed at a position corresponding to the substrate supporting portion a transfer arm for receiving or delivering the substrate A substrate holding claw for holding the substrate is provided for the wafer holding claw to pass up and down. 如申請專利範圍第1或2項之液體處理裝置，其中，該基板支持部，具備第2缺口部，其設有基板夾持機構，該基板夾持機構包含推抵部，從側向抵住該基板支持部所支持之該基板的周緣。 The liquid processing apparatus according to claim 1 or 2, wherein the substrate supporting portion includes a second notch portion provided with a substrate holding mechanism, and the substrate holding mechanism includes a pushing portion that is laterally opposed The periphery of the substrate supported by the substrate support portion. 如申請專利範圍第7項之液體處理裝置，其中，與該第1缺口部相鄰之該基板支持部，其在該旋轉板之旋轉方向上游側的端部具有銳角形狀。 The liquid processing apparatus according to claim 7, wherein the substrate supporting portion adjacent to the first notch portion has an acute-angled shape at an end portion on the upstream side in the rotation direction of the rotating plate. 如申請專利範圍第1或2項之液體處理裝置，其中，更具備旋轉軸部，其沿著該旋轉板之旋轉中心延伸並連接於該旋轉驅動部，以將該旋轉驅動部之旋轉力傳達至該旋轉板；於該旋轉軸部設有供給管，以將氣體供給至該旋轉板與由該基板支持部支持該周緣的該基板之間。 The liquid processing apparatus according to claim 1 or 2, further comprising a rotating shaft portion extending along a rotation center of the rotating plate and coupled to the rotation driving portion to transmit a rotational force of the rotation driving portion To the rotating plate, a supply pipe is provided in the rotating shaft portion to supply gas between the rotating plate and the substrate supported by the substrate supporting portion. 如申請專利範圍第1或2項之液體處理裝置，其中，該供給部包括接觸於該基板之頂面用以洗淨該頂面的洗淨構件。 The liquid processing apparatus according to claim 1 or 2, wherein the supply portion includes a cleaning member that contacts the top surface of the substrate to clean the top surface. 一種液體處理裝置之控制方法，該液體處理裝置包括：旋轉板，藉由旋轉驅動部而旋轉；基板支持部，具有朝向該旋轉板之中心的方向傾斜之傾斜面，且沿著該旋轉板之周緣設置，用來支持基板的周緣；導引部，設於該基板支持部的上端，且相較於藉由該基板支持部支持該周緣之該基板的表面，具有更高的高度，將該基板導引至該基板支持部；供給部，對於由該基板支持部支持該周緣之該基板，從上方供給液體；以及夾持部，設於該旋轉板之周緣，藉由推抵該基板而夾持該基板；該基板支持部與該導引部沿著該旋轉板之周緣設置於一個該夾持部的兩側，由該夾持部與該基板支持部及該導引部所構成之群組，沿著該旋轉板的周向至少設置3個以上； 該液體處理裝置之控制方法，包含：一邊以該導引部導引該基板，一邊藉由以該基板支持部之該傾斜面支持該基板之周緣，使該基板支持部支持該基板之步驟；藉由該夾持部夾持該基板之步驟；旋轉該基板之步驟；以及對該基板供給液體之步驟。 A method of controlling a liquid processing apparatus, the liquid processing apparatus comprising: a rotating plate rotated by a rotation driving portion; the substrate supporting portion having an inclined surface inclined toward a direction of a center of the rotating plate, and along the rotating plate a peripheral edge for supporting a periphery of the substrate; a guiding portion disposed at an upper end of the substrate supporting portion and having a higher height than a surface of the substrate supporting the periphery by the substrate supporting portion The substrate is guided to the substrate supporting portion; the supply portion supplies the liquid from the upper side to the substrate supporting the peripheral edge of the substrate supporting portion; and the clamping portion is provided on the periphery of the rotating plate by pushing against the substrate Holding the substrate; the substrate supporting portion and the guiding portion are disposed on one side of the clamping portion along a circumference of the rotating plate, and the clamping portion and the substrate supporting portion and the guiding portion are formed Groups, at least three or more along the circumferential direction of the rotating plate; The method for controlling the liquid processing apparatus includes the step of supporting the substrate by the guiding portion while supporting the substrate by supporting the substrate with the inclined surface of the substrate supporting portion; a step of clamping the substrate by the clamping portion; a step of rotating the substrate; and a step of supplying a liquid to the substrate. 如申請專利範圍第12項之液體處理裝置之控制方法，其中，前述以該基板支持部支持該基板之步驟，包含使基板保持爪穿越缺口部之步驟，該缺口部設置於該旋轉板及該基板支持部，其設置係對應於在與該基板支持部之間接收或遞交該基板之搬送臂所具備之保持該基板的該基板保持爪。 The method of controlling a liquid processing apparatus according to claim 12, wherein the step of supporting the substrate by the substrate supporting portion includes a step of passing the substrate holding claw through the notch portion, the notch portion being disposed on the rotating plate and the rotating plate The substrate supporting portion is provided to correspond to the substrate holding claw provided in the transfer arm that receives or delivers the substrate between the substrate supporting portion and holds the substrate. 如申請專利範圍第12或13項之液體處理裝置之控制方法，其中，前述以該基板支持部支持該基板之步驟，包含藉由從側向推抵該基板支持部所支持之該基板的周緣以夾持該基板之步驟。 The method of controlling a liquid processing apparatus according to claim 12 or 13, wherein the step of supporting the substrate by the substrate supporting portion comprises: pushing a peripheral edge of the substrate supported by the substrate supporting portion from a lateral direction The step of clamping the substrate. 如申請專利範圍第12或13項之液體處理裝置之控制方法，其中，前述供給液體之步驟，包含使洗淨該基板頂面之洗淨構件，接觸該基板支持部所支持之該基板之該頂面的步驟。 The method for controlling a liquid processing apparatus according to claim 12, wherein the step of supplying the liquid includes: cleaning the cleaning member on the top surface of the substrate, contacting the substrate supported by the substrate supporting portion; Top steps. 如申請專利範圍第12或13項之液體處理裝置之控制方法，其中，更包含：將惰性氣體供給至由該基板支持部所支持之該基板與該旋轉板之間的空間之步驟。 The method of controlling a liquid processing apparatus according to claim 12 or 13, further comprising the step of supplying an inert gas to a space between the substrate supported by the substrate supporting portion and the rotating plate.
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