TWI516625B - Target assembly - Google Patents
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- TWI516625B TWI516625B TW102121733A TW102121733A TWI516625B TW I516625 B TWI516625 B TW I516625B TW 102121733 A TW102121733 A TW 102121733A TW 102121733 A TW102121733 A TW 102121733A TW I516625 B TWI516625 B TW I516625B
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- sputtering target
- backing plate
- back surface
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Description
本發明係關於在液晶顯示器等顯示元件或觸控感測器等電子元件中，被使用在用以形成薄膜電晶體(TFT)的電極材料、或對感測器的電性連接配線用的Cu合金薄膜，透過焊材而將濺鍍靶材及背襯板相接合的靶材接合體。 The present invention relates to an electrode material used for forming a thin film transistor (TFT) or an electrical connection wiring for a sensor in an electronic component such as a display element such as a liquid crystal display or a touch sensor. The alloy film is a target bonded body in which a sputtering target and a backing plate are joined by a welding material.
Cu薄膜係基於電阻低、加工較為容易等理由，形成為液晶顯示器等顯示元件的掃描電極或訊號電極、觸控感測器等電子元件的電性連接配線，被進行微細加工來加以使用。以Cu薄膜的素材而言，在純Cu中，由於與玻璃等基材的密接性差，而且容易氧化，會有表面容易變色，而且在半導體中的擴散係數大的缺點。基於此，以電性連接配線用薄膜的素材而言，一般使用Cu合金。在Cu合金薄膜中，係可改善使用如上所述之純Cu薄膜時的問題，視用途來選擇適當的添加元素，藉此可使作為配線用薄膜來使用時的功能提升。因此、關於電子元件用途，已開發出各種種類的Cu合金薄膜。 The Cu thin film is electrically connected to an electronic component such as a scan electrode, a signal electrode, or a touch sensor of a display element such as a liquid crystal display, and is used for microfabrication based on reasons such as low electric resistance and easy processing. In the case of the Cu film, in the case of pure Cu, since the adhesion to the substrate such as glass is poor and the oxidation is easy, the surface is likely to be discolored, and the diffusion coefficient in the semiconductor is large. Based on this, a Cu alloy is generally used as a material for electrically connecting the wiring film. In the Cu alloy thin film, the problem of using the pure Cu thin film as described above can be improved, and an appropriate additive element can be selected depending on the application, whereby the function as a wiring film can be improved. Therefore, various types of Cu alloy thin films have been developed for use in electronic components.
在形成Cu合金薄膜時，一般採用使用濺鍍靶材的濺鍍法。該濺鍍法係在低氣體壓力下對真空容器內導入氬等惰性氣體，在由與薄膜為相同材料所成的濺鍍靶材與基材之間施加高電壓，而使電漿放電發生。使藉由該電漿放電而被離子化的氣體(在此為氬)加速、衝撞濺鍍靶材，藉由非彈性衝撞，將濺鍍靶材的構成原子敲出，使其附著、堆積在基板上來製作薄膜的方法。 In the formation of a Cu alloy thin film, a sputtering method using a sputtering target is generally employed. In the sputtering method, an inert gas such as argon is introduced into a vacuum vessel under a low gas pressure, and a high voltage is applied between a sputtering target made of the same material as the film to cause a plasma discharge. The gas ionized by the plasma discharge (here, argon) accelerates and collides with the sputtering target, and the constituent atoms of the sputtering target are knocked out by inelastic collision to adhere and accumulate. A method of forming a film on a substrate.
在金屬薄膜的成膜法係除了濺鍍法以外，亦已知真空蒸鍍法，但是在濺鍍法中，係具有可連續形成與濺鍍靶材為相同組成的薄膜的優點。而且，尤其為金屬材料的情形下，若適用濺鍍法時，可使如稀土類元素等般不會固溶在Cu中的合金元素強制固溶在薄膜中。在工業上，即使由可大面積連續安定成膜的觀點來看，亦以濺鍍法為具優勢的成膜法。 In the film formation method of the metal thin film, a vacuum vapor deposition method is known in addition to the sputtering method, but in the sputtering method, there is an advantage that a film having the same composition as that of the sputtering target can be continuously formed. Further, in the case of a metal material in particular, when a sputtering method is applied, an alloy element which is not dissolved in Cu such as a rare earth element can be forcibly dissolved in a film. Industrially, even from the viewpoint of continuous film formation in a large area, sputtering is an advantageous film formation method.
以適用於如上所示之濺鍍法的濺鍍靶材而言，一般使用長方形狀、圓盤狀等平板狀者，濺鍍靶材係一般以其之冷卻或支持為目的而以焊料等焊接在背襯板(支持體)的狀態(靶材接合體)下被使用。 In the case of a sputtering target suitable for the sputtering method as described above, a flat shape such as a rectangular shape or a disk shape is generally used, and the sputtering target is generally soldered by solder or the like for the purpose of cooling or supporting it. It is used under the state of the backing plate (support body) (target joint).
但是，上述背襯板係如上所述，基於以成膜時所被加熱的靶材的冷卻為目的，一般使用熱傳導率高的純Cu製、Cu合金製、純Al製或Al合金製者。另一方面，安裝在上述背襯板的濺鍍靶材係由對應所形成的薄膜的金屬材料所成，為了形成電性連接配線用的Cu合金薄膜，使用以Cu合金而言，形成為與基底膜的密接性優異 的Cu合金，此外，形成為抑制基底膜或上部膜中的原子擴散的障壁膜用的Cu合金，且將預定量的Mn作為合金元素所含有的Cu-Mn合金成為主流。此外，在靶材材料與背襯板的接合，一般進行使用熱傳導性或導電性良好的低熔點焊料(例如銦基焊料或錫基焊料)等接合材的金屬接合。 However, as described above, the backing plate is generally made of pure Cu, a Cu alloy, a pure Al or an Al alloy, which is preferably made of a high thermal conductivity, for the purpose of cooling the target to be heated during film formation. On the other hand, the sputtering target attached to the backing plate is made of a metal material corresponding to the formed film, and is formed in a Cu alloy for forming a Cu alloy film for electrical connection wiring. Excellent adhesion to the base film In addition, a Cu alloy for a barrier film which suppresses atom diffusion in a base film or an upper film is formed, and a predetermined amount of Mn is used as a Cu-Mn alloy contained in an alloy element. Further, in the bonding of the target material and the backing plate, metal bonding using a bonding material such as a low melting point solder (for example, an indium-based solder or a tin-based solder) having good thermal conductivity or conductivity is generally used.
以關於Cu-Mn合金薄膜的技術而言，例如在專利文獻1係揭示針對作為液晶顯示器的電極所被使用的Cu-Mn合金薄膜，Mn優先與氧起反應，而形成抑制Cu氧化的氧化物皮膜的內容。在該技術中，係揭示使用Cu-Mn合金薄膜作為薄膜電晶體(TFT)之電極材料時的有用性。 In the technique of the Cu-Mn alloy thin film, for example, Patent Document 1 discloses that for a Cu-Mn alloy thin film used as an electrode of a liquid crystal display, Mn preferentially reacts with oxygen to form an oxide which suppresses oxidation of Cu. The content of the membrane. In this technique, the usefulness of using a Cu-Mn alloy thin film as an electrode material of a thin film transistor (TFT) is revealed.
此外，在專利文獻2係揭示對於因來自作為光記錄層之保護層所使用的ZnS的S擴散而發生的Cu的硫化，在Cu-Mn合金薄膜，係抑制界面反應的內容。 Further, Patent Document 2 discloses that vulcanization of Cu occurs due to S diffusion from ZnS used as a protective layer of the optical recording layer, and the interface reaction is suppressed in the Cu-Mn alloy thin film.
另一方面，在專利文獻3中係揭示一種提升濺鍍靶材與焊材的潤濕性，而使濺鍍靶材與背襯板的接合強度增大之濺鍍靶材之製造方法。 On the other hand, Patent Document 3 discloses a method of manufacturing a sputtering target which enhances the wettability of a sputtering target and a welding material, and which increases the bonding strength between the sputtering target and the backing plate.
[專利文獻1]日本專利第4065959號公報 [Patent Document 1] Japanese Patent No. 4065959
[專利文獻2]日本專利第4603044號公報 [Patent Document 2] Japanese Patent No. 4603044
[專利文獻3]日本專利第2970729號公報 [Patent Document 3] Japanese Patent No. 2970729
藉由金屬接合所為之濺鍍靶材與背襯板的接合係藉由將濺鍍靶材與背襯板的各個加熱，在欲接合的面的各個面塗佈經熔融的焊材，使已塗佈焊材的面彼此疊合來進行。但是，若濺鍍靶材如Cu-Mn合金般由含有Mn者所成時，在經熔融的焊材中，濺鍍靶材中的Mn會染出，而產生在焊材表面濃化的現象，此由本發明人等的研究可清楚得知。 The bonding of the sputtering target and the backing plate by the metal bonding is performed by applying the molten solder material to each surface of the surface to be joined by heating each of the sputtering target and the backing plate. The surfaces on which the welding consumables are applied are superposed on each other. However, when a sputtering target such as a Cu-Mn alloy is formed of Mn-containing alloy, Mn in the sputtering target is dyed in the molten welding material, and the surface of the welding material is concentrated. This is clearly known from the study by the present inventors.
在焊材表面濃化的Mn容易被氧化，因此形成氧化膜。若在焊材表面形成有氧化膜的狀態下進行藉由焊接所為之接合時，氧化膜由於與焊材的潤濕性差，因此在使濺鍍靶材與背襯板疊合時，會在焊材中產生孔隙(氣泡)。該孔隙部分係熱傳導性差，因此在藉由濺鍍所為之成膜中，會產生濺鍍靶材的局部溫度上升，容易產生成形膜厚在面內的不均一。此外，若產生濺鍍靶材的溫度上升，焊材溶出，由濺鍍靶材與背襯板的界面溢出而造成異常放電的原因，會有無法進行安定成膜的問題。溢出的焊材係亦造成附著在玻璃基板而發生微粒或飛濺的原因。 The Mn concentrated on the surface of the solder material is easily oxidized, and thus an oxide film is formed. When bonding is performed by welding in a state in which an oxide film is formed on the surface of the solder material, the oxide film is inferior in wettability to the solder material, and therefore, when the sputtering target and the backing plate are laminated, welding is performed. Pores (bubbles) are produced in the material. Since the pore portion is inferior in thermal conductivity, the local temperature of the sputtering target increases in the film formation by sputtering, and the unevenness of the thickness of the formed film in the plane is likely to occur. Further, when the temperature at which the sputtering target is generated rises, the solder material is eluted, and the interface between the sputtering target and the backing plate overflows to cause abnormal discharge, and there is a problem that stable film formation cannot be performed. Spilled welding consumables also cause microparticles or splashes that adhere to the glass substrate.
關於至此為止形成Cu-Mn合金薄膜的技術，已有各種被提出，但是關於在焊材中所產生的孔隙(氣泡)的問題，均完全未被察覺。例如在如上述專利文獻1所示之技術中，濺鍍靶材中的合金元素係在焊材中擴散，與背襯板相貼合，在焊材中發生孔隙(氣泡)般的系列， 被預測會產生無法進行安定成膜的問題。 Various techniques for forming a Cu-Mn alloy thin film have been proposed so far, but the problems of voids (bubbles) generated in the consumables are completely undetected. For example, in the technique disclosed in Patent Document 1, the alloying elements in the sputtering target are diffused in the welding material, and are bonded to the backing plate, and a series of pores (bubbles) are formed in the welding material. It is predicted that there will be a problem that it is impossible to form a film.
此外，在專利文獻2的技術中，實際上未使用濺鍍靶材來進行Cu-Mn合金薄膜的成膜，對於擬似性所製作的Cu-Mn合金鑄錠被覆ZnS，因此關於實際上接合在背襯板來濺鍍時的課題，並未被掌握。 Further, in the technique of Patent Document 2, the sputtering target is not actually used to form a Cu-Mn alloy thin film, and the Cu-Mn alloy ingot produced for the pseudo-likeness is coated with ZnS, so that the bonding is actually performed. The problem of sputtering on the backing plate has not been mastered.
本發明係著重在如上所述之情形而研創者，其目的在提供使用Cu-Mn合金濺鍍靶材來濺鍍而成膜時，防止成形膜厚在面內的不均一而可形成厚度均一的薄膜的靶材接合體。此外，本發明之其他目的在提供防止因焊材溶出所造成的異常放電而可進行安定的成膜，並且可防止微粒或飛濺的發生的靶材接合體。 The present invention has been focused on the above-mentioned circumstances, and its object is to provide a uniform thickness in the in-plane when the film is sputter-deposited using a Cu-Mn alloy sputtering target. The target joint of the film. Further, another object of the present invention is to provide a target bonded body which can prevent film formation due to abnormal discharge due to elution of a solder material and which can prevent filming or splashing.
可達成上述目的之本發明之靶材接合體係在以下具有要旨：具備有：濺鍍靶材、背襯板、及焊材，濺鍍靶材的背面透過焊材而與背襯板相接合的靶材接合體，其中前述濺鍍靶材係含有2~30原子%的Mn的Cu-Mn合金，並且存在於前述焊材中的孔隙對濺鍍靶材背面的投影面積的合計，相對於濺鍍靶材背面的接合區域全體的面積為16%以下。藉由採用如此構成，可提供一種防止成形膜厚在面內的不均一而可形成厚度均一的薄膜的靶材接合體。 The target joining system of the present invention which achieves the above object has the following gist: a sputtering target, a backing plate, and a welding material, and the back surface of the sputtering target is bonded to the backing plate through the welding material. a target bonded body, wherein the sputtering target is a Cu-Mn alloy containing 2 to 30 atom% of Mn, and a total of a projected area of the pores in the solder material to the back surface of the sputtering target is relative to the sputtering The entire area of the joint region on the back surface of the plating target is 16% or less. By adopting such a configuration, it is possible to provide a target bonded body which can prevent a film thickness from being uneven in the surface and can form a film having a uniform thickness.
此外，本發明之靶材接合體係在以下亦具有要旨：具備有：濺鍍靶材、背襯板、及焊材，濺鍍靶材的 背面透過焊材而與背襯板相接合的靶材接合體，其中前述濺鍍靶材係含有2~30原子%的Mn的Cu-Mn合金，並且存在於前述焊材中的接合端部的各孔隙對濺鍍靶材背面的投影面積，相對於濺鍍靶材背面的接合區域全體的面積為0.2%以下。在此，接合端部意指由濺鍍靶材的兩端部(實際上為全周部)，至濺鍍靶材的直徑的5%內側的部分為止的區域。藉由採用如此構成，可提供一種防止因焊材溶出所造成的異常放電而可進行安定的成膜，並且可防止微粒或飛濺發生的靶材接合體。 In addition, the target bonding system of the present invention also has the following gist: a sputtering target, a backing plate, a welding material, and a sputtering target. a target bonded body in which a back surface is bonded to a backing plate through a solder material, wherein the sputtering target is a Cu-Mn alloy containing 2 to 30 atom% of Mn, and is present at a joint end portion of the solder material The area of projection of each of the pores on the back surface of the sputtering target is 0.2% or less with respect to the entire area of the bonding region on the back surface of the sputtering target. Here, the joint end portion means a region from the both end portions of the sputtering target (actually, the entire circumference portion) to the portion inside the 5% of the diameter of the sputtering target. By adopting such a configuration, it is possible to provide a target bonded body capable of preventing film formation due to abnormal discharge due to elution of the solder material and preventing the occurrence of particles or spatter.
此外，本發明之靶材接合體係在以下亦具有要旨：具備有：濺鍍靶材、背襯板、及焊材，濺鍍靶材的背面透過焊材而與背襯板相接合的靶材接合體，其中前述濺鍍靶材係含有2~30原子%的Mn的Cu-Mn合金，並且存在於前述焊材中的孔隙對濺鍍靶材背面的投影面積的合計，相對於濺鍍靶材背面的接合區域全體的面積為16%以下，而且存在於前述焊材中的接合端部的各孔隙對濺鍍靶材背面的投影面積，相對於濺鍍靶材背面的接合區域全體的面積為0.2%以下。與上述同樣地，接合端部意指由濺鍍靶材的兩端部(實際上為全周部)，至濺鍍靶材的直徑的5%內側的部分為止的區域。藉由採用如此構成，可兼具上述兩特性。 Further, the target joining system of the present invention has the following gist: a sputtering target, a backing plate, and a welding material, and the back surface of the sputtering target is penetrated with the welding material to be bonded to the backing plate. a bonded body, wherein the sputtering target is a Cu-Mn alloy containing 2 to 30 atom% of Mn, and the total area of the voids present in the solder material on the back surface of the sputtering target is relative to the sputtering target The area of the entire joint area on the back surface of the material is 16% or less, and the area of the projection of each of the joint ends in the welding material on the back surface of the sputtering target is larger than the area of the joint area on the back surface of the sputtering target. It is 0.2% or less. Similarly to the above, the joint end portion means a region from the both end portions of the sputtering target (actually, the entire circumference portion) to the portion inside the 5% of the diameter of the sputtering target. By adopting such a configuration, both of the above characteristics can be achieved.
在本發明之靶材接合體中，以較佳使用的焊材而言，列舉銦基焊料或錫基焊料等。 In the target joined body of the present invention, an indium-based solder or a tin-based solder or the like is used as a preferred solder material.
此外，背襯板係選自由銅、銅合金、鋁及鋁 合金所成群組的至少1種亦為較佳之實施態樣。 In addition, the backing plate is selected from the group consisting of copper, copper alloy, aluminum and aluminum. At least one of the groups of alloys is also a preferred embodiment.
藉由本發明，將存在於焊材中的孔隙對濺鍍靶材背面的投影面積的合計，規定為相對於濺鍍靶材背面的接合區域全體的面積為預定的比例，因此當濺鍍而成膜時，可防止成形膜厚在面內的不均一而可形成厚度均一的薄膜。此外，在本發明中，藉由將存在於焊材中的各孔隙對濺鍍靶材背面的投影面積，規定為相對於濺鍍靶材背面的接合區域全體的面積為預定的比例，藉此可在濺鍍而成膜時，防止因焊材溶出所造成的異常放電而可進行安定的成膜，並且可防止微粒或飛濺發生。 According to the present invention, the total area of the projection area of the pores present in the consumable material on the back surface of the sputtering target is set to a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target, so that sputtering is performed. In the case of a film, it is possible to prevent a film thickness from being uneven in the plane and to form a film having a uniform thickness. Further, in the present invention, the area of projection of each of the pores present in the consumable material on the back surface of the sputtering target is defined as a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target. When the film is formed by sputtering, it is possible to prevent stable discharge due to abnormal discharge due to the elution of the solder material, and to prevent generation of particles or spatter.
1‧‧‧靶材接合體 1‧‧‧target joint
2‧‧‧濺鍍靶材 2‧‧‧Splating target
3‧‧‧背襯板 3‧‧‧Backing board
4‧‧‧焊材 4‧‧‧welding materials
4a‧‧‧經熔融的焊材 4a‧‧‧fused welding consumables
5‧‧‧孔隙 5‧‧‧ pores
6‧‧‧堰堤 6‧‧‧堰
8‧‧‧注入器 8‧‧‧Injector
9‧‧‧振動台 9‧‧‧ shaking table
圖1係以模式顯示靶材接合體的完成品的概略說明圖(剖面圖)。 Fig. 1 is a schematic explanatory view (cross-sectional view) showing a finished product of a target joined body in a mode.
圖2係以模式顯示將濺鍍靶材透過經熔融的焊材而配置在背襯板上的狀態的概略說明圖(剖面圖)。 2 is a schematic explanatory view (cross-sectional view) showing a state in which a sputtering target is placed on a backing plate by passing a molten welding material in a mode.
圖3係以模式顯示將濺鍍靶材透過經熔融的焊材而配置在背襯板上的其他狀態的概略說明圖(剖面圖)。 Fig. 3 is a schematic explanatory view (cross-sectional view) showing another state in which a sputtering target is placed on a backing plate through a molten welding material.
圖4係以模式顯示將濺鍍靶材透過經熔融的焊材而配置在背襯板上的另外其他狀態的概略說明圖(剖面圖)。 Fig. 4 is a schematic explanatory view (cross-sectional view) showing another state in which a sputtering target is placed on a backing plate through a molten welding material.
當將濺鍍靶材與背襯板透過接合材而形成為靶材接合體時，使用銦基(In基)焊料或錫基(Sn基)焊料等低熔點金屬作為接合材，進行加熱處理而將低熔點金屬熔融而使靶材材料熔接。此時，若使用Cu-Mn合金作為濺鍍靶材時，所含有的Mn會溶出於焊材中，而在焊材表面形成氧化膜，因此在靶材與背襯板的貼合工程中，形成為容易在焊材中產生孔隙的狀態。如此狀態會導致如上所述之各種問題。 When the sputtering target and the backing plate are passed through the bonding material to form a target bonded body, a low melting point metal such as an indium-based (In-based) solder or a tin-based (Sn-based) solder is used as a bonding material, and heat treatment is performed. The low melting point metal is melted to weld the target material. At this time, when a Cu-Mn alloy is used as the sputtering target, the contained Mn is dissolved in the welding material, and an oxide film is formed on the surface of the welding material. Therefore, in the bonding work between the target and the backing plate, It is formed in a state in which pores are easily generated in the consumable. Such a state can cause various problems as described above.
上述問題至今完全未被察覺，當將Cu-Mn合金以外的濺鍍靶材與背襯板接合時，被設為並不會發生任何問題。 The above problem has not been completely noticed until now, and when a sputtering target other than the Cu-Mn alloy is bonded to the backing plate, it is set so as not to cause any problem.
本發明人等針對可解決如上所示之問題的靶材接合體的構成不斷精心研究。結果發現若在濺鍍靶材材料與背襯板透過接合材而被接合的靶材接合體中，將(a)存在於焊材中的孔隙對濺鍍靶材背面的投影面積的合計、或(b)存在於焊材中的各孔隙對濺鍍靶材背面的投影面積，以相對於濺鍍靶材背面的接合區域全體的面積為預定的比例的方式進行控制，即完美達成上述目的，以致完成本發明。 The inventors of the present invention have continually studied carefully the composition of a target joined body that can solve the problems as described above. As a result, it was found that (a) the total area of the projection of the pores present in the consumable material on the back surface of the sputter target, or the target joint body to which the sputter target material and the backing plate are joined by the bonding material, or (b) the projected area of each of the pores present in the consumable material on the back surface of the sputter target is controlled so as to be a predetermined ratio with respect to the entire area of the joint region on the back surface of the sputter target, that is, the above object is perfectly achieved. The invention is thus completed.
圖1係以模式顯示靶材接合體的完成品的概略說明圖(剖面圖)。本發明之靶材接合體1係形成為濺鍍靶材2與背襯板3透過焊材4而相接合的構成。其中，在圖1中，為方便說明起見，焊材4係顯示呈凝固的狀 態，關於會存在於其中的孔隙，並未圖示。 Fig. 1 is a schematic explanatory view (cross-sectional view) showing a finished product of a target joined body in a mode. The target bonded body 1 of the present invention has a configuration in which the sputtering target 2 and the backing plate 3 are joined to each other through the welding material 4. Here, in FIG. 1, for the convenience of explanation, the welding material 4 is shown to be solidified. State, the pores that will exist in it, are not shown.
在本發明之靶材接合體1中，存在於焊材4中的孔隙對濺鍍靶材2背面的投影面積意指由圖1的上方觀看焊材4時的孔隙面積(平面視面積)，該面積合計相對濺鍍靶材2背面的接合區域全體的面積的比例(以下有時僅稱之為「投影面積率」)為16%以下。之所以將該投影面積率規定為16%以下係基於若投影面積率變高時，濺鍍時的濺鍍靶材2的均一冷卻惡化，成膜速度在濺鍍靶材2內會成為不均一之故。較佳之投射面積率為10%以下，更佳為7%以下。其中，若孔隙朝投影方向重疊2個而存在時，「投影面積的合計」係設為可將2個孔隙同時投影所形成的影子的面積。 In the target assembly 1 of the present invention, the projected area of the pores present in the consumable 4 to the back surface of the sputtering target 2 means the void area (planar viewing area) when the consumable 4 is viewed from above in FIG. The ratio of the total area to the area of the entire joint area on the back surface of the sputtering target 2 (hereinafter sometimes referred to as "projected area ratio") is 16% or less. The reason why the projected area ratio is 16% or less is that when the projected area ratio is increased, the uniform cooling of the sputtering target 2 during sputtering is deteriorated, and the deposition rate becomes uneven in the sputtering target 2 . The reason. A preferred projected area ratio is 10% or less, more preferably 7% or less. In the case where the apertures overlap in the projection direction, the "total of the projected area" is an area of a shadow formed by simultaneously projecting two apertures.
為了將投影面積率控制成如上所述，當將濺鍍靶材2及背襯板3以經熔融的焊材(參照後述圖2的4a)進行接合時，若例如使濺鍍靶材2上下動(泵送)(參照後述圖2)，使經熔融的焊材4a中的孔隙5消除即可。藉由該方法來減小投影面積率時，當上下動時，例如藉由浮力，容易將焊材中的孔隙排出至大氣中，因此較佳為將焊材(例如銦基焊料)的溫度保持在黏性降低的175℃以上，另外實施泵送次數10次以上等來進行控制。 In order to control the projected area ratio as described above, when the sputtering target 2 and the backing plate 3 are joined by a molten solder material (refer to 4a of FIG. 2 described later), for example, the sputtering target 2 is placed up and down. The movement (pumping) (refer to FIG. 2 described later) may be performed to eliminate the pores 5 in the molten welding material 4a. When the projection area ratio is reduced by this method, it is easy to discharge the pores in the solder material to the atmosphere when moving up and down, for example, by buoyancy, so it is preferable to maintain the temperature of the solder material (for example, indium-based solder). The pressure is reduced at 175 ° C or higher, and the number of pumping times is 10 or more times to perform control.
此外，當將經熔融的焊材4a注入至濺鍍靶材2與背襯板3之間時，亦可使用注入器8，將經熔融的焊材4a噴射、注入在濺鍍靶材2與背襯板3間(參照後述圖3)。在藉由如此方法來減小投影面積率時，當使用注 入器來噴射、注入焊材時，例如將注入器中的焊材(例如銦基焊料)的溫度保持在175℃以上而使黏性降低，且使焊材中的氣泡自然地浮起而去除。之後，為了置換濺鍍靶材與背襯板的界面的焊材，較佳為將注入器中的焊材押出量加減控制。 Further, when the molten welding material 4a is injected between the sputtering target 2 and the backing plate 3, the melted welding material 4a may be sprayed and injected into the sputtering target 2 using the injector 8. The backing sheets 3 are provided (refer to FIG. 3 described later). When using this method to reduce the projected area ratio, when using the note When the injector is used to spray and inject the welding material, for example, the temperature of the welding material (for example, indium-based solder) in the injector is maintained at 175° C. or higher to lower the viscosity, and the bubbles in the welding material are naturally floated and removed. . Thereafter, in order to replace the welding material at the interface between the sputtering target and the backing plate, it is preferable to control the amount of the welding material in the injector.
或者，當將濺鍍靶材2與背襯板3以經熔融的焊材4a相接合時，亦可將背襯板3載置於振動台9(參照後述圖4)，使濺鍍靶材2一體擺動，藉此消除經熔融的焊材4a中的孔隙5(參照後述圖4)。藉由如此方法來減小投影面積率時，若將濺鍍靶材2擺動時，較佳為例如將焊材(例如銦基焊料)的溫度保持在175℃以上而使黏性降低，以使濺鍍靶材傾斜3°以上進行擺動的時間來進行控制。 Alternatively, when the sputtering target 2 and the backing plate 3 are joined by the molten welding material 4a, the backing plate 3 may be placed on the vibration table 9 (see FIG. 4 described later) to cause the sputtering target. 2 integrally swings, thereby eliminating the voids 5 in the molten solder material 4a (refer to FIG. 4 described later). When the projection area ratio is reduced by such a method, when the sputtering target 2 is swung, it is preferable to maintain the temperature of the solder material (for example, indium-based solder) at 175 ° C or higher to lower the viscosity. The sputtering target is controlled by tilting for 3° or more to swing.
在本發明之靶材接合體1中，存在於焊材4中，尤其至少存在於接合端部中的各孔隙對濺鍍靶材2背面的投影面積，相對於濺鍍靶材背面的接合區域全體的面積為0.2%以下亦為有用。上述「接合端部」意指由圖1所示之濺鍍靶材2的兩端(實際上為全周部)至朝內側5%(L1/L0×100)為止的區域。至少存在於接合端部中的各孔隙對濺鍍靶材背面的投影面積(以下有時將各孔隙對濺鍍靶材背面的投影面積稱為「各孔隙的大小」)，相對於濺鍍靶材背面的接合區域全體的面積，為0.2%以下，藉此防止因焊材溶出所造成的異常放電而可進行安定的成膜，並且可防止微粒或飛濺發生。各孔隙的大小對上 述特性造成影響的係成為在接合端部的影響較大者。因此，在上述區域中，若各孔隙的大小成為「0.2%以下」，則在中心部的各孔隙的大小亦可大於0.2%。各孔隙的大小較佳為0.1%以下，更佳為未達0.1%(測定界限)。 In the target joint body 1 of the present invention, it is present in the welding material 4, in particular, at least the projected area of each of the pores in the joint end portion against the back surface of the sputtering target 2, with respect to the joint area of the back surface of the sputtering target It is also useful to have an area of 0.2% or less. The above-mentioned "joining end portion" means a region from both ends (actually the entire circumference portion) of the sputtering target 2 shown in FIG. 1 to the inner side of 5% (L 1 /L 0 ×100). At least the projected area of each of the pores in the joint end portion on the back surface of the sputtering target (hereinafter, the projected area of each pore to the back surface of the sputtering target is referred to as "the size of each pore"), relative to the sputtering target The area of the entire joint area on the back surface of the material is 0.2% or less, thereby preventing stable discharge due to abnormal discharge due to the elution of the solder material, and preventing generation of particles or spatter. The influence of the size of each pore on the above characteristics is a greater influence on the joint end. Therefore, in the above region, if the size of each pore is "0.2% or less", the size of each pore in the center portion may be more than 0.2%. The size of each pore is preferably 0.1% or less, more preferably less than 0.1% (measurement limit).
其中，為了將各孔隙的大小如上所述進行控制，基本上若形成與控制投影面積率時相同即可，但是若至少在接合端部進行達成上述控制的控制即可。具體而言，濺鍍靶材與背襯板相貼合時，將焊材(例如銦基焊料)的溫度保持為175℃以上，使所產生的孔隙，控制濺鍍靶材的泵送次數、或藉由注入器所致之焊材的押出量、或使濺鍍靶材傾斜進行擺動的時間即可。 However, in order to control the size of each of the apertures as described above, it is basically the same as the case where the projected area ratio is controlled. However, the control for achieving the above control may be performed at least at the joint end. Specifically, when the sputtering target is bonded to the backing plate, the temperature of the welding material (for example, indium-based solder) is maintained at 175° C. or higher, the generated pores are controlled, and the number of pumping of the sputtering target is controlled. Alternatively, the amount of the welding material to be ejected by the injector or the time during which the sputtering target is tilted may be swung.
本發明中所使用的濺鍍靶材係含有2~30原子%之Mn的Cu-Mn合金。Mn係為了在濺鍍靶材形成氧化物皮膜層所含有者。為了使藉由Mn所達成的效果發揮，Mn含有量可為0.1原子%左右以上，隨著Mn含有量的增大，上述效果亦會變大。接著，隨著Mn含有量的增大，形成為孔隙容易生成的狀態。在本發明中雖使上述效果發揮，但是以容易生成孔隙的Mn含有量而言，將其下限規定為2原子%。較佳為5原子%以上，更佳為10原子%以上。 The sputtering target used in the present invention is a Cu-Mn alloy containing 2 to 30 atom% of Mn. Mn is included in order to form an oxide film layer on a sputtering target. In order to exhibit the effect achieved by Mn, the Mn content may be about 0.1 atom% or more, and as the Mn content increases, the above effect also increases. Then, as the Mn content increases, a state in which pores are easily formed is formed. In the present invention, the above effects are exhibited, but the lower limit of the Mn content which is likely to generate pores is 2 atom%. It is preferably 5 atom% or more, more preferably 10 atom% or more.
但是，若Mn含有量過剩時，相對地Cu量變少，Cu-Mn合金的導電率會降低，作為電性連接配線用的功能不易被發揮，因此必須設為30原子%以下。較佳為25原子%以下，更佳為20原子%以下。 However, when the Mn content is excessive, a relatively small amount of C u, the conductivity of the Cu-Mn alloy is reduced, as the electrical connection wiring is not easy to play function, it is necessary to be 30 atomic% or less. It is preferably 25 atom% or less, more preferably 20 atom% or less.
在本發明中所使用的濺鍍靶材亦可含有不會妨礙其特性的程度的其他成分。以如此之成分而言，列舉例如Zn、Ni、Mg、Ti、Al等，可容許含有該等成分的1種以上至2原子%為止(殘部為Cu及不可避免不純物)。 The sputtering target used in the present invention may contain other components to the extent that it does not impede its characteristics. In the case of such a component, for example, Zn, Ni, Mg, Ti, Al, or the like can be contained, and one or more and 2 atom% of the components are allowed to be contained (the residue is Cu and unavoidable impurities).
關於本發明中所使用的背襯板，並未特別限定，可使用各種周知的背襯板。例如以耐熱性、導電性、熱傳導性優異的背襯板而言，使用含有選自由銅、各種銅合金、鋁、各種鋁合金所成群組的至少1種的背襯板。而且，在背襯板亦可設有冷卻水水路等冷卻手段等。 The backing sheet used in the present invention is not particularly limited, and various well-known backing sheets can be used. For example, a backing plate having excellent heat resistance, electrical conductivity, and thermal conductivity is used, and a backing plate containing at least one selected from the group consisting of copper, various copper alloys, aluminum, and various aluminum alloys is used. Further, a cooling means such as a cooling water channel may be provided on the backing plate.
關於在本發明中所使用的焊材，可使用自以往所被使用的低熔點焊料(例如銦基焊料或錫基焊料等金屬)等。具體而言，列舉52質量%In-48質量%Sn、97質量%In-3質量%Ag等銦基焊料、或91質量%Sn-9質量%Zn等錫基焊料等。 As the welding material used in the present invention, a low melting point solder (for example, a metal such as an indium-based solder or a tin-based solder) used in the past can be used. Specifically, an indium-based solder such as 52% by mass of In-48% by mass, 97% by mass of In-3% by mass, or a tin-based solder such as 91% by mass of Sn-9 mass% Zn or the like is used.
本發明之靶材接合體係可利用下述順序來製作。首先，例如對經熔解鑄造的Cu-Mn合金的鑄錠施行機械加工，藉此製作板狀的濺鍍靶材。將該所製作的濺鍍靶材，使用焊材而接合在背襯板而形成為靶材接合體。 The target joining system of the present invention can be produced by the following procedure. First, for example, an ingot of a melt-cast Cu-Mn alloy is machined to prepare a plate-shaped sputtering target. The produced sputtering target was bonded to the backing plate using a welding material to form a target bonded body.
接著，將如上所製作的靶材接合體安裝在作為真空裝置的濺鍍裝置，在背襯板與和其相對向的基板之間施加電場，藉此在濺鍍靶材與基板之間形成電漿，使電漿中的陽離子衝撞濺鍍靶材，藉此敲出構成濺鍍靶材的原子，使對應濺鍍靶材的組成的薄膜均一堆積在相對向的基 板上。 Next, the target bonded body produced as above is mounted on a sputtering apparatus as a vacuum device, and an electric field is applied between the backing plate and the substrate opposed thereto, thereby forming electricity between the sputtering target and the substrate. The slurry causes the cation in the plasma to collide with the sputtering target, thereby knocking out the atoms constituting the sputtering target, so that the film corresponding to the composition of the sputtering target is uniformly deposited on the opposite base. On the board.
以下列舉實施例，更加具體說明本發明，惟本發明當然並非受到下述實施例限制，當然亦可在適於前後述之主旨的範圍適當施加變更來實施，該等均包含在本發明之技術範圍內。 The present invention is not limited by the following examples, but the present invention is of course not limited by the following examples, and may be appropriately modified and applied in the scope of the subject matter described above, which are all included in the technology of the present invention. Within the scope.
將經熔解鑄造的Cu-10原子%Mn合金的鑄錠進行熱間壓延(壓延溫度：700℃、壓下率：80%)，切斷後，施行機械加工，加工成直徑：100mm×厚度5mm的圓盤狀，形成為濺鍍靶材2(Cu-Mn合金靶材)。將該濺鍍靶材2、及純銅製的背襯板3(尺寸：直徑126mm×厚度7mm)，使用純銦焊材相貼合而接合，以製作靶材接合體1。 The cast ingot of the cast-cast Cu-10 atom% Mn alloy was subjected to hot rolling (rolling temperature: 700 ° C, reduction ratio: 80%), and after cutting, it was machined to have a diameter of 100 mm × a thickness of 5 mm. The disk shape is formed as a sputtering target 2 (Cu-Mn alloy target). The sputtering target 2 and the backing plate 3 made of pure copper (size: diameter: 126 mm × thickness: 7 mm) were bonded together by using a pure indium welding material to form a target joined body 1.
於圖2(概略說明圖)中模式顯示將濺鍍靶材2透過經熔融的焊材(熔融狀態的焊材)4a而配置在背襯板3上的狀態。貼合後，在經熔融的焊材4a中係含有孔隙5(氣泡)，但是在透過經熔融的焊材4a而將濺鍍靶材2載置在背襯板3上的狀態下，使濺鍍靶材2上下動12次(圖2中以箭號A表示)，消除經熔融的焊材4a中的孔隙5，來控制孔隙5的投影面積率及孔隙5的大小。其中，圖2中，6係表示焊材止留用的堰堤。 In the mode shown in FIG. 2 (schematic diagram), the sputtering target 2 is placed on the backing plate 3 through the molten welding material (welding material in a molten state) 4a. After the bonding, the pores 5 (bubbles) are contained in the molten welding material 4a, but the sputtering target 2 is placed on the backing plate 3 through the molten welding material 4a, and splashed. The plating target 2 is moved up and down 12 times (indicated by an arrow A in Fig. 2) to eliminate the voids 5 in the molten solder material 4a, thereby controlling the projected area ratio of the pores 5 and the size of the pores 5. In addition, in FIG. 2, 6 is a banknote for retaining a welding material.
將靶材接合體1冷卻至經熔融的焊材4a凝固的溫度為止，由靶材接合體1去除溢出的焊材4，形成為完成品(實驗例1)。靶材接合體1的完成品係如前述圖1(概略說明圖)所示。在該靶材接合體1中，使用水浸式的超音波檢測裝置(「超音波透視裝置HIS-2」商品名，Krautkramer公司製)，測定孔隙的投影面積率及各孔隙的大小。 The target joined body 1 is cooled to a temperature at which the molten solder material 4a is solidified, and the overflowed welding material 4 is removed from the target joined body 1 to form a finished product (Experimental Example 1). The finished product of the target joined body 1 is as shown in Fig. 1 (schematic illustration). In the target bonded body 1, a water immersion ultrasonic detecting device ("Voice fluoroscopy device HIS-2", manufactured by Krautkramer Co., Ltd.) was used, and the projected area ratio of the pores and the size of each pore were measured.
此時關於孔隙的投影面積率，藉由上述超音波檢測裝置來感測藉由孔隙所致之反射回波，測定孔隙的投影面積，計算出相對於濺鍍靶材2背面面積全體的比例。此外，關於各孔隙的大小，在由濺鍍靶材2的兩端(實際上為全周部)至5mm內側為止的區域(接合端部)，測定各孔隙的投影面積的最大值，且計算出相對於該濺鍍靶材背面面積全體的比例(在接合端部的各孔隙的大小)。 At this time, with respect to the projected area ratio of the aperture, the ultrasonic echo detecting means senses the reflected echo by the aperture, measures the projected area of the aperture, and calculates the ratio with respect to the entire back surface area of the sputtering target 2. Further, regarding the size of each of the pores, the maximum value of the projected area of each of the pores is measured in a region (joining end portion) from both ends (actually the entire circumference portion) of the sputtering target 2 to the inner side of 5 mm, and calculation is performed. The ratio (the size of each pore at the joint end portion) to the entire back surface area of the sputtering target.
與實驗例1同樣地，將濺鍍靶材2(Cu-Mn合金靶材)進行機械加工，將此與純銅製的背襯板3(尺寸：直徑126mm×厚度7mm)，使用純銦焊材相貼合而接合，製作出靶材接合體1。此時，如圖3(概略說明圖)所示，將經熔融的焊材4a，使用注入器8而噴射、注入至濺鍍靶材2與背襯板3之間，使經熔融的焊材4a中的孔隙5(氣泡)消除，控制孔隙的投影面積率、及在接合端部的 各孔隙的大小。 In the same manner as in Experimental Example 1, the sputtering target 2 (Cu-Mn alloy target) was machined to a pure copper backing plate 3 (size: diameter: 126 mm × thickness: 7 mm), and pure indium welding material was used. The target bonded body 1 was produced by bonding and bonding. At this time, as shown in FIG. 3 (schematic illustration), the molten welding material 4a is sprayed and injected between the sputtering target 2 and the backing plate 3 using the injector 8, and the molten welding material is melted. The void 5 (bubble) in 4a is eliminated, the projected area ratio of the controlled pores, and the joint end portion The size of each pore.
將靶材接合體1冷卻至經熔融的焊材4a凝固的溫度為止，去除由靶材接合體1溢出的焊材4，形成為完成品(實驗例2)。靶材接合體1的完成品係如前述圖1(概略說明圖)所示。在該靶材接合體1中，與實驗例1同樣地，測定孔隙的投影面積率、及在接合端部的各孔隙的大小。 The target material assembly 1 is cooled to a temperature at which the molten solder material 4a is solidified, and the solder material 4 overflowing from the target material assembly 1 is removed to form a finished product (Experimental Example 2). The finished product of the target joined body 1 is as shown in Fig. 1 (schematic illustration). In the target bonded body 1, the projected area ratio of the voids and the size of each pore at the joint end portion were measured in the same manner as in Experimental Example 1.
與實驗例1同樣地，將濺鍍靶材2(Cu-Mn合金靶材)進行機械加工，將此與純銅製的背襯板3(尺寸：直徑126mm×厚度7mm)，使用純銦焊材相貼合而接合，製作出靶材接合體1。此時，為了將經熔融的焊材4a中的孔隙(氣孔)消除，如圖4(概略說明圖)所示，在使經熔融的焊材4a介在於濺鍍靶材2與背襯板3之間的狀態下，在振動台9上一體擺動，使經熔融的焊材4a中的孔隙5(氣泡)消除，實施擺動10秒鐘，藉此控制孔隙的投影面積率、及在接合端部的各孔隙的大小。 In the same manner as in Experimental Example 1, the sputtering target 2 (Cu-Mn alloy target) was machined to a pure copper backing plate 3 (size: diameter: 126 mm × thickness: 7 mm), and pure indium welding material was used. The target bonded body 1 was produced by bonding and bonding. At this time, in order to eliminate voids (pores) in the molten solder material 4a, as shown in FIG. 4 (schematic diagram), the molten solder material 4a is placed between the sputtering target 2 and the backing plate 3 In the state between the two, the vibration table 9 is integrally oscillated to eliminate the pores 5 (bubbles) in the molten welding material 4a, and the oscillation is performed for 10 seconds, thereby controlling the projected area ratio of the pores and the joint end portion. The size of each pore.
將靶材接合體1冷卻至經熔融的焊材4a凝固的溫度為止，將由靶材接合體1溢出的焊材4去除，形成為完成品(實驗例3)。靶材接合體1的完成品係如前述圖1(概略說明圖)所示。在該靶材接合體1中，與實驗例1同樣地，測定孔隙的投影面積率、及在接合端部的各孔隙的大小。 The target material assembly 1 is cooled to a temperature at which the molten welding material 4a is solidified, and the welding material 4 overflowing from the target assembly 1 is removed to form a finished product (Experimental Example 3). The finished product of the target joined body 1 is as shown in Fig. 1 (schematic illustration). In the target bonded body 1, the projected area ratio of the voids and the size of each pore at the joint end portion were measured in the same manner as in Experimental Example 1.
與實驗例1同樣地，將濺鍍靶材2(Cu-Mn合金靶材)進行機械加工，將此與純銅製的背襯板3(尺寸：直徑126mm×厚度7mm)，使用純銦焊材相貼合而接合，製作出各種靶材接合體1(實驗例4~6)。此時，針對實驗例4，完全不進行使經熔融的焊材4a中的孔隙(氣孔)消除的作業(實驗例1~3的任一者所記載的作業)，將濺鍍靶材2(Cu-Mn合金靶材)與背襯板3相接合。此外，針對實驗例5，藉由實施5秒鐘在振動台上的擺動，將焊材中的孔隙(氣孔)消除，針對實驗例6，進行藉由僅實施一次靶材泵送來使焊材中的孔隙(氣孔)消除的作業。 In the same manner as in Experimental Example 1, the sputtering target 2 (Cu-Mn alloy target) was machined to a pure copper backing plate 3 (size: diameter: 126 mm × thickness: 7 mm), and pure indium welding material was used. Each of the target bonded bodies 1 (Experimental Examples 4 to 6) was produced by bonding them together. At this time, in the experimental example 4, the operation of eliminating the pores (pores) in the molten welding material 4a (the operation described in any of Experimental Examples 1 to 3) was not performed, and the sputtering target 2 was The Cu-Mn alloy target is bonded to the backing plate 3. Further, in Experimental Example 5, the pores (pores) in the consumables were removed by swinging on the vibrating table for 5 seconds, and in Experimental Example 6, the target material was pumped by performing only one target pumping. The operation of the pores (pores) is eliminated.
將各靶材接合體1冷卻至經熔融的焊材4a凝固的溫度為止，將由靶材接合體1溢出的焊材4去除，形成為完成品(實驗例4~6)。靶材接合體1的完成品係如前述圖1(概略說明圖)所示。在該等靶材接合體1中，與實驗例1同樣地，測定孔隙的投影面積率、及在接合端部的各孔隙的大小。 Each of the target bonded bodies 1 is cooled to a temperature at which the molten solder material 4a is solidified, and the solder material 4 overflowing from the target bonded body 1 is removed to form a finished product (Experimental Examples 4 to 6). The finished product of the target joined body 1 is as shown in Fig. 1 (schematic illustration). In the target bonded body 1, the projected area ratio of the voids and the size of each pore at the joint end portion were measured in the same manner as in Experimental Example 1.
將上述實驗例1~6的各靶材接合體1裝設在磁控管DC濺鍍裝置，以DC電力：260W、壓力：2mTorr，進行濺鍍。實施10分鐘的預濺鍍之後，以成膜時間1分鐘，將厚度約300nm的膜成膜在 50mm的玻璃基板，作為初始的特性(初期特性)，在8部位測定由 基板的中心為20mm的距離中的膜厚。 Each of the target bonded bodies 1 of the above Experimental Examples 1 to 6 was mounted on a magnetron DC sputtering apparatus, and sputtering was performed with a DC power of 260 W and a pressure of 2 mTorr. After 10 minutes of pre-sputtering, a film having a thickness of about 300 nm was formed at a film formation time of 1 minute. The 50 mm glass substrate was measured for the film thickness at a distance of 20 mm from the center of the substrate as the initial characteristics (initial characteristics).
之後，以相同條件，進行2小時的放電，再度以成膜時間1分鐘，將厚度約300nm的膜成膜在 50mm的玻璃基板，在8部位測定由基板的中心為20mm的距離中的膜厚。將初始的8部位的膜厚中的最大值與最小值的差、與2小時放電後的相同8部位的膜厚中的最大值與最小值的差相比較，若2小時放電後的8部位的膜厚中的最大值與最小值的差，相對於初始的8部位的膜厚中的最大值與最小值的差，變化1.3倍以上時，判斷出有發生膜厚偏差(若未達1.3倍，則沒有發生膜厚偏差)。 Thereafter, the discharge was performed for 2 hours under the same conditions, and the film having a thickness of about 300 nm was film-formed again at a film formation time of 1 minute. The film thickness of the glass substrate of 50 mm was measured at the distance of 20 mm from the center of the substrate at 8 points. The difference between the maximum value and the minimum value in the film thickness of the initial eight portions is compared with the difference between the maximum value and the minimum value in the film thicknesses of the same eight portions after the two-hour discharge, and the eight portions after the two-hour discharge When the difference between the maximum value and the minimum value in the film thickness is changed by 1.3 times or more with respect to the difference between the maximum value and the minimum value in the film thickness of the initial eight portions, it is judged that the film thickness deviation occurs (if less than 1.3) When the ratio is doubled, no film thickness deviation occurs.
此外，結束2小時放電後對玻璃基板的成膜後，亦針對在濺鍍靶材與背襯板的界面是否有焊材溶出加以調査。將該等結果，連同孔隙的投影面積率、在接合端部的各孔隙的大小(孔隙的最大面積率)一起顯示於下述表1。 Further, after the film formation on the glass substrate after the completion of the discharge for 2 hours, it was also investigated whether or not the solder material was eluted at the interface between the sputtering target and the backing plate. These results are shown in Table 1 below together with the projected area ratio of the pores and the size of each pore at the joint end (the maximum area ratio of the pores).
由該結果可考察如下。首先，可知如實驗例4及實驗例6所示，若孔隙的投影面積率超過16%時，會發生膜厚偏差，但是如實驗例1~3、5所示投影面積率為16%以下時，並不會發生膜厚偏差。關於產生如此現象的理由。可考慮如下。亦即，在成膜初期，濺鍍靶材全體被認為會透過經水冷的背襯板而被均一地冷卻，但是若孔隙的投影面積率變大時，會被認為孔隙近傍的濺鍍靶材局部形成冷卻不足，濺鍍靶材表面的溫度會局部上升。已知若濺鍍靶材的溫度上升，濺鍍率(亦即成膜速度)會降低，可認為因該影響而發生膜厚偏差。 From this result, it can be examined as follows. First, as shown in Experimental Example 4 and Experimental Example 6, when the projected area ratio of the pores exceeds 16%, the film thickness variation occurs. However, as shown in Experimental Examples 1 to 3 and 5, the projected area ratio is 16% or less. , film thickness deviation does not occur. The reason for this phenomenon. Consider the following. That is, in the initial stage of film formation, the entire sputtering target is considered to be uniformly cooled through the water-cooled backing plate, but if the projected area ratio of the pores becomes large, the sputtering target which is considered to be close to the pores is considered. The local formation is insufficiently cooled, and the temperature of the surface of the sputtering target locally rises. It is known that if the temperature of the sputtering target rises, the sputtering rate (that is, the film formation rate) is lowered, and it is considered that the film thickness variation occurs due to the influence.
此外，如實驗例4及實驗例5所示，若在濺鍍靶材端5mm區域的孔隙的最大面積率超過0.2%時，基於與上述同樣的理由，濺鍍靶材會局部溫度上升，因此被認為焊材會由靶材接合體的接合端部溶出。相對於此，若在接合端部的各孔隙的大小為0.2%以下(實驗例1~3、6)，被認為並不會發生焊材溶出般的靶材局部溫度上升。 Further, as shown in the experimental example 4 and the experimental example 5, when the maximum area ratio of the pores in the region of 5 mm of the sputtering target end exceeds 0.2%, the sputtering target locally increases in temperature for the same reason as described above. It is considered that the consumable material is eluted from the joint end portion of the target joined body. On the other hand, when the size of each pore at the joint end portion is 0.2% or less (Experimental Examples 1 to 3 and 6), it is considered that the local temperature rise of the target such as the elution of the solder material does not occur.
參照詳細且特定的實施態樣來說明本申請案，惟在未脫離本發明之精神與範圍的情形下，可施加各種變更或修正，對該領域熟習該項技術者為清楚可知。 The present application is described with reference to the detailed and specific embodiments thereof, and various changes and modifications may be made without departing from the spirit and scope of the invention.
本申請案係根據2012年6月26日申請的日本專利申請(特願2012-143497)者，其內容作為參照而被編入於此。 The present application is based on Japanese Patent Application No. 2012-143497, filed on Jun.
藉由本發明，將存在於焊材中的孔隙對濺鍍靶材背面的投影面積的合計，規定為相對於濺鍍靶材背面的接合區域全體的面積為預定的比例，因此在濺鍍而成膜時，可防止成形膜厚在面內的不均一而形成厚度均一的薄膜。此外，在本發明中，將存在於焊材中的各孔隙對濺鍍靶材背面的投影面積，規定為相對於濺鍍靶材背面的接合區域全體的面積為預定的比例，藉此在濺鍍而成膜時，可防止因焊材溶出所造成的異常放電而可進行安定的成膜，並且可防止微粒或飛濺發生。 According to the present invention, the total area of the projections of the pores present in the consumable material on the back surface of the sputtering target is set to a predetermined ratio with respect to the entire area of the bonding region on the back surface of the sputtering target, and thus is formed by sputtering. In the case of a film, it is possible to prevent the film thickness from being uneven in the plane to form a film having a uniform thickness. Further, in the present invention, the projected area of each of the pores present in the consumable material on the back surface of the sputter target is defined as a predetermined ratio with respect to the entire area of the joint region on the back surface of the sputter target, thereby being splashed. When the film is formed by plating, it is possible to prevent stable discharge due to abnormal discharge due to the elution of the solder material, and to prevent generation of particles or spatter.
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| JP2012143497A JP5952653B2 (en) | 2012-06-26 | 2012-06-26 | Target assembly |
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| KR (1) | KR20150013876A (en) |
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| US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
| JP6677853B1 (en) | 2019-02-07 | 2020-04-08 | 住友化学株式会社 | Sputtering target, method for joining target material and backing plate, and method for manufacturing sputtering target |
| KR20230072292A (en) | 2021-11-17 | 2023-05-24 | 바짐테크놀로지 주식회사 | Sputtering target assembly |
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| JPS6228066A (en) * | 1985-07-26 | 1987-02-06 | Tanaka Kikinzoku Kogyo Kk | Production of target for sputtering |
| US5230462A (en) * | 1992-07-08 | 1993-07-27 | Materials Research Corporation | Method of soldering a sputtering target to a backing member |
| JPH06128735A (en) * | 1992-10-20 | 1994-05-10 | Mitsubishi Kasei Corp | Production of sputtering target |
| US7626665B2 (en) * | 2004-08-31 | 2009-12-01 | Tohoku University | Copper alloys and liquid-crystal display device |
| JP4955008B2 (en) * | 2006-10-03 | 2012-06-20 | Ｊｘ日鉱日石金属株式会社 | Cu-Mn alloy sputtering target and semiconductor wiring |
| JP5387118B2 (en) * | 2008-06-10 | 2014-01-15 | 東ソー株式会社 | Cylindrical sputtering target and manufacturing method thereof |
| JP5420328B2 (en) * | 2008-08-01 | 2014-02-19 | 三菱マテリアル株式会社 | Sputtering target for forming wiring films for flat panel displays |
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| CN104411861A (en) | 2015-03-11 |
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