TWI515807B - 具備獨立驅動器之半導體晶粒層壓裝置 - Google Patents

具備獨立驅動器之半導體晶粒層壓裝置 Download PDF

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TWI515807B
TWI515807B TW102105666A TW102105666A TWI515807B TW I515807 B TWI515807 B TW I515807B TW 102105666 A TW102105666 A TW 102105666A TW 102105666 A TW102105666 A TW 102105666A TW I515807 B TWI515807 B TW I515807B
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Taiwan
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substrate
semiconductor die
lamination
semiconductor
panel
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TW102105666A
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TW201349363A (zh
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顧偉
呂忠
奇門 育
邱進添
邰恩勇
倪敏
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晟碟半導體（上海）有限公司
晟碟信息技術（上海）有限公司
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Publication of TW201349363A publication Critical patent/TW201349363A/zh
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Description

具備獨立驅動器之半導體晶粒層壓裝置
本發明之實施例係關於半導體裝置。
對可攜式消費性電子產品之需求之強勁增長驅動對高容量儲存裝置之需要。非揮發性半導體記憶體裝置(諸如快閃記憶體儲存卡)變得廣泛用於滿足對數位資訊儲存與交換之不斷增長的需求。此等記憶體裝置之可攜性、多功能性及堅固耐用設計連同此等記憶體裝置之高可靠性及大容量一起使得其等理想地用於廣泛多種電子裝置中，包含(例如)數位相機、數位音樂播放器、視訊遊戲主控台、個人數位助理(PDA)及蜂巢式電話。
雖然已知廣泛多種封裝組態，但快閃記憶體儲存卡通常可製造為系統級封裝(SiP)或多晶片模組(MCM)，其中複數個晶粒以一堆疊組態安裝於一基板上。在先前技術圖1與圖2中展示一習知半導體封裝20(無模製化合物)之一邊視圖。典型封裝包含安裝至一基板26之複數個半導體晶粒22、24。儘管未在圖1與圖2中展示，然半導體晶粒經形成而在晶粒之一上表面上具有晶粒接合襯墊。基板26可由夾置於上導電層與下導電層之間之一電絕緣核心形成。上導電層及/或下導電層可經蝕刻以形成包含電導線及接觸襯墊之電導圖案。將焊線焊接在半 導體晶粒22、24之晶粒接合襯墊與基板26之接觸襯墊之間以使半導體晶粒電連接至基板。基板上之電導線繼而在晶粒與一主機裝置之間提供一電路徑。一旦製成晶粒與基板之間之電連接，接著通常將總成圍封在一模製化合物中以提供一保護封裝。
已知將半導體晶粒以一偏移(先前技術圖1)或一堆疊組態(先前技術圖2)層疊於彼此之上。在圖1之偏移組態中，以一偏移堆疊晶粒使得下一下晶粒之接合襯墊保持曝露。偏移需要基板上之一更大佔用面積，其中空間係十分寶貴的。在圖2之堆疊組態中，兩個或兩個以上半導體晶粒直接堆疊於彼此之上，藉此相較於一偏移組態而在基板上佔據較少的佔用面積。然而，在一堆疊組態中，必須針對接合線30而在鄰近半導體晶粒之間提供空間。除接合線30自身高度之外，必須在接合線上方留出額外空間，因為一晶粒之接合線30與其上之下一晶粒之接觸可導致一電短路。如圖2中展示，因此已知提供一介電間隔層34以為待接合至下晶粒24上之晶粒接合襯墊之接合線30提供足夠空間。
一旦自一晶圓分割晶粒，便拾取個別晶粒且將其等放置於一基板面板上(一未固化晶粒附著黏著劑層之頂上)之各自位置上。在晶粒附著於一給定基板位置處之前，使用視覺檢驗以將晶粒與各自基板位置對準。若在一給定例項中未偵測到適當對準，或識別關於該基板位置之一些其他問題，則略過該基板位置且將晶粒放置於下一基板位置處。圖3係在已將晶粒42黏著至各自基板位置44上之後一基板面板40之前兩行之一先前技術視圖。如展示，一基板位置44a已經略過且未接納一半導體晶粒42。
當晶粒最初放置於基板位置處時，晶粒附著黏著劑係B級黏著劑，其具有粘性以固持晶粒但尚未完全固化。晶粒附著黏著劑可在一層壓程序(其中將壓力及熱施加至晶粒附著黏著劑)中固化。藉由一工 作站(基板面板支撐於其上)將熱施加至基板之一底側。
藉由一層壓頭施加壓力至晶粒之一上表面，在先前技術圖4與圖5中展示層壓頭之實例。層壓頭50係包含一列層壓襯墊52之一單體件。該列中之襯墊52之數目可匹配於面板40上之一行基板中之基板位置44之數目。在所展示之實例中存在四個基板位置44及四個層壓襯墊52。舉例而言，如先前技術圖6中所展示，層壓頭50需經對準以與其上支撐基板面板40之工作站平行。若略過此步驟或並未適當地執行此步驟，則層壓頭可與基板面板成一角度偏斜。考慮到層壓頭50的單體構造，當層壓頭之一邊緣接觸基板面板之一邊緣處之晶粒時，層壓頭之相對邊緣可能未適當地接觸基板面板之相對邊緣處之晶粒。因而，單體層壓頭50可能將太多力施加於基板面板40之一邊緣上之晶粒42上，且未將足夠力施加於基板面板40之相對邊緣上之晶粒42上。
現參考先前技術圖7，亦可由於多種原因發生一些晶粒42在面板40之表面上方延伸高於其他晶粒。舉例而言，在圖7中，晶粒42a高於其他晶粒42，且晶粒42b較低。在此例項中，單體層壓頭50將對晶粒42a施加較其他晶粒42多之力，且對晶粒42b施加較其他晶粒42少之力。
現參考先前技術圖8與圖9，在一行中之各基板位置已接納一半導體晶粒的情況下，可控制藉由層壓頭施加於各晶粒上之力。舉例而言，可期望將30N之力F1施加於各半導體晶粒42上。因此，在此實例中，層壓頭可施加30N×4=120N之一反向力F2。然而，如上所述，可發生一行中之一基板位置44a並未接納一半導體晶粒42，如圖9所展示。層壓頭50仍施加120N之一向下力。然而，在此例項中，該力僅由三個半導體晶粒42承受。因而，該行中之各晶粒42上之力F3非所要地增加至120÷3=40N。
20‧‧‧半導體封裝
22‧‧‧半導體晶粒
24‧‧‧半導體晶粒/下晶粒
26‧‧‧基板
30‧‧‧接合線
34‧‧‧介電間隔層
40‧‧‧基板面板
42‧‧‧半導體晶粒/晶粒
44‧‧‧基板位置
44a‧‧‧基板位置
50‧‧‧層壓頭
52‧‧‧層壓襯墊
200‧‧‧基板面板/面板
202‧‧‧基板
202a‧‧‧基板之例項
206‧‧‧視覺檢驗標記
208‧‧‧視覺檢驗標記
215‧‧‧通孔
216‧‧‧電跡線
218‧‧‧接觸襯墊
220‧‧‧半導體晶粒/晶粒
220a‧‧‧晶粒
220b‧‧‧晶粒
230‧‧‧層壓裝置
234‧‧‧層壓單元
236‧‧‧層壓單元
238‧‧‧層壓單元
240‧‧‧層壓單元
244‧‧‧驅動汽缸
246‧‧‧進口埠
248‧‧‧排氣埠/模製化合物(圖22)
252‧‧‧臂
254‧‧‧基底
256‧‧‧層壓頭
256a‧‧‧層壓頭
256b‧‧‧層壓頭
260‧‧‧支撐件
262‧‧‧半導體裝置
264‧‧‧軌條
266‧‧‧軌條
270‧‧‧控制器
271‧‧‧活塞
272‧‧‧氣體源
273‧‧‧驅動軸
274‧‧‧第一軟管/管線
276‧‧‧第二軟管/管線
280‧‧‧壓力感測器
282‧‧‧攝影機
283‧‧‧壓力感測器
F1‧‧‧力
F2‧‧‧力
F3‧‧‧力
圖1與圖2係省略模製化合物之兩個習知半導體封裝設計之先前技術邊視圖。
圖3係具有安裝至基板例項之半導體晶粒之一基板面板之一部分之一先前技術俯視圖。
圖4係用於將半導體晶粒層壓至基板面板之一單體層壓頭之一先前技術透視圖。
圖5係包含層壓襯墊之一單體層壓頭之一先前技術仰視圖。
圖6係與一基板面板不平行之一單體層壓頭之一先前技術邊視圖。
圖7係試圖將不同厚度之晶粒層壓至一基板面板之一單體層壓頭之一先前技術邊視圖。
圖8與圖9係使用一習知單體層壓頭施加至半導體晶粒之力之先前技術邊視圖。
圖10係展示根據本發明之一半導體裝置總成之一流程圖。
圖11係展示根據本發明之一實施例之晶粒附著步驟之更多細節之一流程圖。
圖12係根據本發明之一實施例之一基板面板之一俯視圖。
圖13係來自圖12之基板面板之一行基板之一俯視圖。
圖14係來自圖13之該行基板之一基板之一俯視圖。
圖15係來自如圖13中之基板面板且進一步包含半導體晶粒之一行基板之一俯視圖。
圖16係根據本發明之實施例用於將一行半導體晶粒獨立層壓至基板面板上之一層壓裝置之一透視圖。
圖17係根據本發明之實施例之一層壓單元之一層壓汽缸之一橫截面視圖。
圖18係根據本發明之實施例用於控制層壓裝置之操作之一控制 器之一方塊圖。
圖19係根據本發明之實施例將不同厚度之半導體晶粒層壓至一基板面板上之一層壓裝置之一邊視圖。
圖20係圖解說明藉由根據本發明之實施例之一層壓裝置施加於一行半導體晶粒上之力之一邊視圖。
圖21係根據本發明之實施例將半導體晶粒層壓至一基板面板上之一層壓裝置之一邊視圖，其中層壓單元並不平行於基板面板。
圖22係根據本發明而形成之一半導體裝置之一邊視圖。
現將參考圖10至圖22描述關於一種用於將一行半導體晶粒獨立層壓至一基板面板上之層壓裝置之實施例。應理解本發明可以許多不同形式體現且不應解釋為受限於本文闡述之實施例。實情係，提供此等實施例使得本發明將係透徹而完整且將本發明完全傳達至熟習此項技術者。實際上，本發明旨在涵蓋包含在如藉由隨附申請專利範圍所定義之本發明之範疇及精神內之此等實施例之替代例、修改及等效物。此外，在本發明之以下詳細描述中，為了提供本發明之一透徹理解而闡述許多具體細節。然而，一般技術者將清楚本發明可在無此等具體細節之情況下加以實踐。
如本文中可使用之術語「頂部」與「底部」及「上」與「下」係為便利及闡釋性目的且並不意味限制本發明之描述，因為引用項可交換位置。
現將參考圖10與圖11之流程圖及圖12至圖22之俯視圖、邊視圖及透視圖解釋本技術之一實施例。圖12係包含複數個基板202之一基板面板200之一俯視圖。面板200允許將基板202同時成批處理為若干個半導體裝置262(圖22)以達成規模經濟。基板面板200上之基板202之列數(沿基板面板之一長度之x方向上)及行數(跨基板面板之一寬度之y 方向上)僅藉由實例展示且基板202之列數及/或行數在進一步實施例中可有所變化。
在圖13(相對於圖12旋轉90°)中展示一單行基板202且在圖14中之俯視圖中展示一個別基板202之一實例。一基板202可係多種不同晶片載體介質，包含一印刷電路板(PCB)、一導線框或一捲帶式自動接合(TAB)捲帶。在基板202係一PCB的情況下，基板可由多種導電層形成，各導電層藉由一介電核心分離。基板202中之層數在替代實施例中可有所變化。
再參考圖10之流程圖，在一步驟100中，基板202經鑽孔以界定基板202中之貫穿通孔215。提供通孔215(在圖14中對一些通孔編號)以在基板202之不同層之間傳遞信號。通孔215之數目及位置藉由實例展示，且基板可包含比圖中展示更多之通孔215，且該等通孔215可位於不同於圖中所展示之位置中。
在步驟104中，接著可在設置於(諸)核心上之一或多個導電層中形成電導圖案。頂部導電層與底部導電層中之電導圖案可藉由多種方法形成，包含(例如)藉由絲網及光微影。在圖14中之頂層中展示一電導圖案之一實例。應理解剩餘導電層之一或多者亦可具有亦界定於其中之電導圖案。
基板202中之(該等)電導圖案可包含電跡線216及接觸襯墊218(在圖中對一些接觸襯墊進行編號)。跡線216及接觸襯墊218係藉由實例展示，且基板202可包含多於圖中所展示之跡線及/或接觸襯墊，且該等跡線及/或接觸襯墊可呈不同於圖中所展示之配置。可在電導圖案中提供其他結構，諸如(舉例而言)用於測試半導體裝置262之操作之測試接針。
基板面板200可進一步包含基板202輪廓外部之視覺檢驗標記206及/或208。標記206/208之形狀經提供使得其等可藉由如下文解釋之一 視覺檢驗攝影機予以識別。然而，標記206及/或208之形狀僅藉由實例展示，且在進一步實施例中可係其他形狀。在下文更詳細解釋視覺檢驗標記206、208之使用。
再次參考圖10，在步驟108中，接著可在一自動光學檢驗(AOI)中檢驗基板202。一旦經檢驗，在步驟112中，便可將一焊料遮罩層施加至基板202之上表面及/或下表面。(該等)焊料遮罩層係由聚合物形成，該聚合物為電導圖案之銅跡線提供一保護塗層且防止焊料滲出曝露接觸襯墊及測試接針，藉此防止短路。
在形成焊料遮罩層後，在步驟114中，可在一已知電解電鍍、無電或薄膜沈積程序中使用Ni/Au層或類似物電鍍頂層與底層上之電導圖案(包含例如接觸襯墊218)之曝露部分。
在步驟116中，可在一自動檢驗程序中檢驗及測試基板202，且在步驟120中，該基板可經歷用於檢查電操作且針對污染、劃痕及褪色之一最終視覺檢驗。
假設一基板202通過檢驗，則在步驟122中，接著可將一或多個半導體晶粒附著至基板202之頂表面。分別參考圖11之流程圖及圖15之俯視圖、圖16之透視圖以及圖17之橫截面邊視圖解釋晶粒附著步驟122之進一步細節。在步驟142中，將一晶粒附著黏著劑層施加至一基板之表面。晶粒附著黏著劑可作為一B級黏著劑而施加，其具有粘性且係半固體而尚未固化至一完全固體c級。可使用之一晶粒附著黏著劑之一實例係由在中國上海設有總部之Henkel China製成，隸屬品牌名Ablestik。
在步驟144中，一取放機器人(未展示)將一半導體晶粒220載送至基板面板200，且將該半導體晶粒220定位於基板202上之B級晶粒附著黏著劑上，如圖15中之該行基板中所展示。該取放機器人包含一或多個定位攝影機，該一或多定位攝影機偵測鄰近於各基板202之視覺 檢驗標記206、208之位置。此允許晶粒220在x及y方向上正確地定位於基板上。
若視覺定位攝影機無法偵測標記206及/或208，或偵測到關於一基板202之一給定例項之一些其他問題，則取放機器人略過該例項(在該例項處不放置晶粒220)且移動至一基板202之下一例項。因此，在圖15之實例中，基板202之一例項202a並未接納一晶粒220，而該行基板中的剩餘例項接納一晶粒220。
在將晶粒220放置於基板202上後，將熱及壓力施加於晶粒220及基板202以使晶粒附著黏著劑固化至一C級固體。一旦晶粒附著黏著劑固化至其C級，便將晶粒220固定地附著至基板202。基板面板200係支撐於包含一加熱元件之一工作站(未展示)上。在步驟146中，加熱基板以加熱晶粒附著黏著劑。
結合步驟146，執行一層壓步驟148，其中將壓力施加於晶粒之一頂表面以固化黏著劑同時將晶粒壓抵於基板。根據本技術，可使用包含獨立層壓頭之一層壓裝置將壓力獨立施加至晶粒及基板之多個例項。
現將參考圖16至圖18解釋根據本技術之一層壓裝置230之一實例。圖16展示具有基板202之四個例項之一行之一基板面板200之一實例。在此實施例中，層壓裝置230包含四個層壓單元234、236、238及240，其等之各者匹配於該行中之基板202及晶粒220之各例項之位置。應理解，一行基板可包含多於或少於四個基板，且層壓裝置230可包含對應數目個更多或更少層壓單元。在進一步實施例中，層壓裝置230上的層壓單元數目可少於面板200上之一行基板中之基板202之數目。
層壓單元234、236、238及240之各者可彼此相同。因而，對層壓單元234之以下描述可適用於層壓裝置230中其他層壓單元之各者。 在所展示之實施例中，層壓單元234可藉由一氣動致動器驅動。然而，應理解可採用用於致動層壓單元234之部分以將壓力施加於一晶粒220之一頂表面上之其他致動器。此等額外致動器包含螺線管及其他電磁馬達。
在使用氣動致動器的情況下，層壓單元234可包含一驅動汽缸244，該驅動汽缸244包含一進口埠246及一排氣埠248。一第一軟管274(圖18)可連接至進口埠246，其中該第一軟管選擇性地連接至一加壓氣體源272。一第二軟管276可類似地連接至排氣埠248，其中該第二軟管選擇性地連接至一加壓氣體源(其可係源272或係一不同源)。
圖17係一驅動汽缸244內部之一橫截面視圖。可將加壓氣體供應至進口埠246，而排氣埠248對環境壓力開放。在此情況中，向下驅動一活塞271。活塞271繼而連接至一驅動軸273，該驅動軸273與活塞271一起向下驅動。如下文所解釋，驅動軸273連接至向下施加一力於單個晶粒220上之一臂252。提供至進口埠246之加壓氣體量控制藉由該臂施加於晶粒220上之力。可使向下力維持一預定時間週期，舉例而言(諸如)五秒，但在進一步實施例中可使向下力維持一更長或更短週期。
在預定時間週期期滿後，可使進口埠246之壓力對環境壓力開放，且將一壓力施加於排氣埠248。在此情況下，活塞271及驅動軸273可向上移動，從而自晶粒220移除臂。應理解在進一步實施例中，驅動汽缸244可使用其他氣動方案及組件進行操作，包含(例如)氣動螺線管閥。
再次參考圖16，驅動軸273自驅動汽缸244延伸且連接至一臂252。臂252終接在一基底254中，該基底254具有附接至其之一層壓頭256。基底254及層壓頭256匹配用於面板200上之晶粒220面積。如上所述，在將加壓氣體施加至進口埠246之後，臂252、基底254及層壓頭256向下移動使得層壓頭256將一力向下施加於其上定位層壓襯墊之 晶粒220上。在實施例中，層壓頭256可由一順應材料形成，諸如(但不限於)橡膠。在進一步實施例中，層壓頭256可由其他材料形成，且通常可廣泛地定義為與一半導體晶粒直接接觸以抵靠該半導體晶粒施加一力之化合物。
將層壓單元234、236、238及240之各者安裝至一支撐件，諸如支撐件260。為了允許層壓單元一起對準於面板200上之一行半導體晶粒220，支撐件260可經安裝以在基板面板之x-y平面中平移。針對此目的已知支撐件260可安裝至之平移工作台。在下文更詳細解釋平移支撐件260以使各層壓單元之層壓頭對準於一行晶粒220。
圖18係圖解說明層壓單元234、236、238及240之操作之一方塊圖。一控制器270可針對彼此獨立之層壓單元234、236、238及240之各者提供控制信號且接收回饋信號以實施一閉環回饋系統。控制器270與氣體源272通信以設定藉由源272經由各層壓單元之管線274及276提供至氣動汽缸244之氣體之壓力。層壓單元234、236、238及240之各者彼此獨立操作，且控制器270可自一或多個氣體源272提供不同壓力給不同層壓單元及/或持續不同時間長度。
特定言之，層壓單元234、236、238及240之各者包含用於感測藉由層壓頭256施加於一半導體晶粒220上之一壓力之一壓力感測器283(在圖18中示意性地展示)。此資訊一秒鐘可多次(然在進一步實施例中可以更大或更小頻率遞送壓力讀數)中繼至控制器270。
如先前技術中所述，一些半導體晶粒可能厚於其他半導體晶粒或以其他方式在基板面板之表面上方延伸高於其他半導體晶粒。舉例而言，圖19展示延伸高於其他晶粒220b之一晶粒220a。由於各自層壓單元上之層壓頭256下降且施加壓力於一行晶粒中之晶粒上，故較高晶粒220a上之層壓頭256a將比較低晶粒220b上之層壓頭256b更早地達到所要目標力。舉例而言，一目標力可係30N，但在進一步實施例中 目標力可大於或小於30N。
各層壓單元上之壓力感測器280獨立於其他層壓單元量測壓力。各壓力感測器280將壓力讀數傳回至控制器270，且當一給定壓力感測器指示已達到目標力時，控制器可停止針對該層壓單元進一步向下移動層壓頭。因此，在圖19之實例中，具有層壓頭256a之層壓單元236可先於具有層壓頭256b之層壓單元238停止其向下移動。以此方式，即使在晶粒延伸於面板200之表面上方不同高度處的情況下，控制器270仍可彼此獨立地控制層壓單元使得各層壓頭256對其相關聯之晶粒220提供相同目標力。
如上所述，基板面板可包含視覺檢驗標記206及/或208，層壓單元234、236、238及240之一或多者可進一步包含一攝影機282(圖18中示意性地展示)，該攝影機282用於使該行層壓單元234、236、238及240對準於基板面板200之x-y平面中之該行晶粒220。如上所述，一支撐件260可經安裝以在面板200之x-y平面中平移。攝影機282可偵測支撐件260及層壓單元234、236、238及240相對於視覺檢驗標記206及/或208之位置，且重新定位支撐件260及層壓單元。此允許各層壓單元之層壓頭256一起對準於該行晶粒中之各自晶粒220上方。
一行晶粒中之晶粒220之間之間隔通常係固定且已知的。因而，層壓單元可使其等間隔相對於彼此固定且在支撐件260上一起移動，使得當一層壓頭256在一晶粒220上方對準時，剩餘層壓頭256在其等各自晶粒220上方類似地對準。應理解各層壓單元234、236、238及240可安裝於一支撐件260上，使得在進一步實施例中各層壓單元可相對於其他層壓臂進行獨立x-y定位。
雖然在圖18中示意性地展示一單個攝影機282，但在進一步實施例中，層壓單元之一或多者可包含一個以上攝影機以幫助將層壓單元234、236、238及240對準於基板面板200上之視覺檢驗標記206。
再次參考圖11中之步驟148，藉由各自層壓頭256將目標壓力施加至一行中之晶粒220之各者達一預定時間週期，諸如(舉例而言)五秒(在進一步實施例中，時間可長於或短於五秒)。由於在一晶粒220上可相對於其他晶粒更快地獲得一目標壓力，故施加至一行中之各自晶粒之壓力未必皆同時結束。然而，一旦已將目標壓力施加至該行中之各晶粒達預定時間週期，各晶粒220與基板202之間之晶粒附著黏著劑便可完全固化至一C級黏著劑。此時，晶粒附著黏著劑相對難溶且不熔融，且晶粒穩固地層壓至基板上。
在已完成將一整行晶粒層壓於面板200上之後，面板可前進使得下一行晶粒可定位於層壓單元下方。接著，如上所述般在層壓頭之熱及壓力下層壓下一行晶粒220。如圖16中展示，可以允許基板面板前進之方式將基板面板支撐在軌條264及266之間使得各行晶粒220可連續放置於層壓單元下方。
儘管圖16展示對應於一整行晶粒220之一單列層壓單元234、236、238及240，但應理解可提供一列以上層壓單元使得多行晶粒220得以同時層壓。此外，代替具有對應於一行半導體晶粒之層壓單元，層壓單元可對應於一列半導體晶粒。在此實施例中，層壓裝置可層壓一列晶粒220，接著平移至下一列，且以此類推直至已層壓面板200之全部列。亦預期一列中所存在之層壓單元可少於面板200上之一行中所存在的基板。在此實施例中，層壓單元234、236、238及240及/或基板面板200將經裝備以在x方向及y方向兩者上平移。
如上所述，層壓裝置230之一特徵在於一行晶粒中之各自晶粒220可彼此獨立地層壓至其等各自基板上。此允許將針對一行中之各晶粒220之層壓程序彼此獨立地控制於目標壓力及持續時間。
如上所述，可因多種原因發生一行基板中之一或多個基板未接納一半導體晶粒。在習知單體層壓頭中，此導致該行中之半導體晶粒 承受比預期更大之一力。然而，運用本技術之可獨立操作層壓頭，可解決此問題。圖20圖解說明其中一行中之基板之一者未接納一晶粒220之一實例。然而，由於各層壓頭256係獨立控制，其等之各者可施加一所要目標力F1，與藉由基板202及晶粒220之一相等反向力F1匹配。在圖20之實例中，層壓頭256a並未施加任何力。一行中之全部晶粒通常可接收相同目標力F1。然而，若需要，本技術允許可控地施加不同力至一行中之不同晶粒220。
如在背景章節中亦描述，一單體層壓頭通常需要將單體頭定向成平行於基板面板之一對準步驟。使用本技術可省略此步驟之原因在於，即使層壓裝置230係非平行的，亦可獨立控制各頭256。因此，如圖21中所示，至多，一單個層壓頭在其各自晶粒上方可具有一略微偏斜。一層壓頭256之未對準並不影響任何其他層壓頭256之對準。由於層壓頭256係由一順應材料形成，故即使在一層壓單元與一半導體晶粒220略微成角度之情況下，層壓頭亦可抵靠晶粒220平放，如圖21中所示。
上文已描述用於將一半導體晶粒220層壓至一基板202上之層壓裝置230。層壓裝置230亦可用於將一第一半導體晶粒220層壓至一第二半導體晶粒220上，及用於將全部半導體晶粒220彼此層壓成一晶粒堆疊。因此，舉例而言，層壓裝置可用於：將一單個晶粒層壓至一基板；將兩個晶粒彼此層壓且層壓至基板；將四個晶粒彼此層壓且層壓至基板；將八個晶粒彼此層壓且層壓至基板等等。在實例中，此等晶粒可係快閃記憶體晶粒。一控制器晶粒可使用層壓裝置230進一步層壓至基板或晶粒堆疊。舉例而言，控制器晶粒可係一ASIC。
在如上所述之晶粒附著及層壓之後，接著，在步驟126中可將該一或多個半導體晶粒焊線接合至基板202。在步驟128中，半導體裝置262可經歷一電漿清洗程序以移除微粒並改良表面之可濕性以允許用 於保護半導體晶粒及焊線之一模製化合物之更加流動性質。
在晶粒220已安裝且焊線接合至基板202之後，在步驟132中可將晶粒220及焊線囊封於一模製化合物249中(圖22)。在實施例中，可使用(例如)已知來自日本之Nitto Denko Corp.之環氧樹脂藉由轉移模製或FFT(flow free thin)壓縮模製形成該模製化合物。
在囊封之後，在步驟134中可自面板200單一化半導體裝置262以形成如圖22中所示之製成半導體裝置262。在實施例中，裝置262可係一快閃記憶體裝置，然在進一步實施例中裝置262可係其他半導體封裝。
各裝置262可藉由多種切割方法之任一者單一化，包含鋸切、水刀切割、雷射切割、水導雷射切割、乾式介質切割及金剛石塗層線切割。雖然直線切割將界定一大致矩形或正方形裝置262，但應理解在本發明之進一步實施例中，裝置262可具有除矩形及正方形以外之形狀。
一旦切割成裝置262，在步驟138中便可測試裝置以判定封裝是否正常運作。如此項技術中所知，此測試可包含電氣測試、預燒及其他測試。在步驟140中可視情況將裝置圍封在一蓋內。
總而言之，在一實施例中，本技術係關於一種用於將半導體晶粒層壓至一基板面板上之基板上之層壓裝置，該層壓裝置包括：複數個層壓單元，該複數個層壓單元中之各層壓單元包含一致動器及一層壓頭，該致動器致動該層壓頭以施加一力於一半導體晶粒上，其中彼此獨立地致動複數個層壓單元之層壓頭。
在另一實施例中，本技術係關於一種用於將半導體晶粒層壓至一基板面板上之基板上之層壓裝置，該層壓裝置包括：一列層壓單元，該列層壓單元中之各層壓單元包含一致動器及一層壓頭，該致動器致動該層壓頭以施加一預定力於一半導體晶粒上達一預定時間週期，其中一第一層壓頭抵靠一第一半導體晶粒之預定力及/或預定時 間係獨立於一第二層壓頭抵靠一第二半導體晶粒之預定力及/或預定時間而控制。
在一進一步實施例中，本技術係關於一種半導體裝置面板，其包括：基板之第一例項、第二例項及第三例項，該第一例項與該第二例項沿該面板上之一列基板彼此鄰近，且該第一例項與該第三例項沿該面板上之一行基板彼此鄰近；第一半導體晶粒、第二半導體晶粒及第三半導體晶粒，其等分別層壓至基板之該第一例項、該第二例項及該第三例項上，使用一力及時間之至少一者層壓該第一半導體晶粒，層壓該第一半導體晶粒所使用之該力及時間係獨立於層壓該第二半導體晶粒及該第三半導體晶粒所使用之一力及時間。
在另一實施例中，本技術係關於一種自一半導體裝置面板單一化之半導體裝置，該半導體裝置包括：一基板；及一半導體晶粒，層壓該半導體晶粒至該基板上所使用之一力係獨立於層壓一第二半導體晶粒至一第二基板上所使用之一力地被控制，該第二半導體晶粒及該第二基板經定位而在該面板上之一列中鄰近於該基板及該半導體晶粒，且層壓該半導體晶粒至該基板上所使用之一力係獨立於層壓一第三半導體晶粒至一第三基板上所使用之一力地被控制，該第三半導體晶粒及該第三基板經定位而在該面板上之一行中鄰近於該基板及該半導體晶粒。
為圖解及描述之目的已呈現本發明之前述詳細描述。並不旨在詳盡性或將本發明限於所揭示之精確形式。鑑於上述教示，許多修改及變動係可能的。選取所描述之實施例以最佳地解釋本發明之原理及其實際應用，以藉此使其他熟習此項技術者能夠在多種實施例中且在如適於預期特定用途之多種修改下最佳地利用本發明。希望藉由隨附申請專利範圍定義本發明之範疇。
200‧‧‧基板面板
220‧‧‧半導體晶粒/晶粒
230‧‧‧層壓裝置
234‧‧‧層壓單元
236‧‧‧層壓單元
238‧‧‧層壓單元
240‧‧‧層壓單元
244‧‧‧驅動汽缸
246‧‧‧進口埠
248‧‧‧排氣埠
252‧‧‧臂
254‧‧‧基底
256‧‧‧層壓頭
260‧‧‧支撐件
264‧‧‧軌條
266‧‧‧軌條

Claims (19)

  1. 一種用於將半導體晶粒層壓至一基板面板上之基板上之層壓裝置，該層壓裝置包括：複數個層壓單元，該複數個層壓單元中之各層壓單元包含一致動器及一層壓頭，該致動器致動該層壓頭以施加一力於一半導體晶粒上，其中該複數個層壓單元之該等層壓頭係彼此獨立地致動；及一控制器，該控制器彼此獨立地控制該等層壓單元。
  2. 如請求項1之層壓裝置，其中該致動器係一氣動致動器。
  3. 如請求項1之層壓裝置，其中該等層壓頭之各者可經控制以施加一力於一半導體晶粒上，藉由一第一層壓頭施加於一第一半導體晶粒上之一力係獨立於藉由一第二層壓頭施加於一第二半導體晶粒上之一力而控制。
  4. 如請求項1之層壓裝置，其中該等層壓頭之各者可經控制以施加一力於一半導體晶粒上達一預定時間週期，藉由一第一層壓頭將所施加之力施加於一第一半導體晶粒上之一第一時間週期係獨立於藉由一第二層壓頭將所施加之力施加於一第二半導體晶粒上之一第二時間週期而控制。
  5. 如請求項1之層壓裝置，其中該基板面板包含沿該基板面板之一長度定向之複數列基板及跨該基板面板之寬度定向之複數行，該複數個層壓單元沿一行基板定向。
  6. 如請求項5之層壓裝置，其中並非該行中之全部該等基板接納一半導體晶粒，該層壓裝置中之各層壓頭施加一預定目標壓力於該行基板中之該半導體晶粒上。
  7. 如請求項1之層壓裝置，其中該基板面板包含沿該基板面板之一長度定向之複數列基板及跨該基板面板之寬度定向之複數行，該複數個層壓單元沿一列基板定向。
  8. 一種用於將半導體晶粒層壓至一基板面板上之基板上之層壓裝置，該層壓裝置包括：一列層壓單元，該列層壓單元中之各層壓單元包含一致動器及一層壓頭，該致動器致動該層壓頭以施加一預定力於一半導體晶粒上達一預定時間週期，其中一第一層壓頭抵靠一第一半導體晶粒之預定力及/或預定時間係獨立於一第二層壓頭抵靠一第二半導體晶粒之預定力及/或預定時間而控制。
  9. 如請求項8之層壓裝置，其進一步包括各層壓單元上之一壓力感測器，一第一層壓單元上之一第一壓力感測器獨立於一第二層壓單元上之一第二壓力感測器而量測一半導體晶粒上之該第一層壓頭之一壓力。
  10. 如請求項8之層壓裝置，其中該基板面板包含視覺檢驗標記，該列層壓單元包含用於識別該等視覺檢驗標記以將該列層壓單元定位至複數個半導體晶粒之至少一攝影機。
  11. 如請求項8之層壓裝置，其中該列層壓單元經安裝以平行於該基板面板之一x-y平面而平移。
  12. 如請求項11之層壓裝置，其中該列層壓單元經安裝以一起平移。
  13. 一種半導體裝置之面板，其包括：基板之第一例項、第二例項及第三例項，該第一例項及該第二例項沿該面板上之一列基板彼此鄰近，且該第一例項及該第三例項沿該面板上之一行基板彼此鄰近；第一半導體晶粒、第二半導體晶粒及第三半導體晶粒，其等分別層壓至基板之該第一例項、該第二例項及該第三例項，使 用一力及時間之至少一者層壓該第一半導體晶粒，層壓該第一半導體晶粒所使用之該力及時間係獨立於層壓該第二半導體晶粒及該第三半導體晶粒所使用之一力及時間。
  14. 如請求項13之半導體裝置面板，其中該第一半導體晶粒、該第二半導體晶粒及該第三半導體晶粒藉由焊線電耦合至基板之該第一例項、該第二例項及該第三例項。
  15. 如請求項13之半導體裝置面板，其中該第一半導體晶粒、該第二半導體晶粒及該第三半導體晶粒係使用一模製化合物囊封於該面板上。
  16. 一種自半導體裝置之一面板單一化之半導體裝置，該半導體裝置包括：一基板；及一半導體晶粒，層壓該半導體晶粒至該基板上所使用之一力係獨立於層壓一第二半導體晶粒至一第二基板上所使用之一力地被控制，該第二半導體晶粒及該第二基板經定位而在該面板上之一列中鄰近於該基板及該半導體晶粒，且層壓該半導體晶粒至該基板上所使用之一力係獨立於層壓一第三半導體晶粒至一第三基板上所使用之一力地被控制，該第三半導體晶粒及該第三基板經定位而在該面板上之一行中鄰近於該基板及該半導體晶粒。
  17. 如請求項16之半導體裝置，其中該半導體晶粒係藉由焊線電耦合至該基板。
  18. 如請求項16之半導體裝置，其中該半導體晶粒係使用一模製化合物囊封於該基板上。
  19. 如請求項16之半導體裝置，其中該半導體裝置係一快閃記憶體裝置。
TW102105666A 2012-05-07 2013-02-18 具備獨立驅動器之半導體晶粒層壓裝置 TWI515807B (zh)

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