TWI515083B - Polishing pad - Google Patents
Polishing pad Download PDFInfo
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- TWI515083B TWI515083B TW102134473A TW102134473A TWI515083B TW I515083 B TWI515083 B TW I515083B TW 102134473 A TW102134473 A TW 102134473A TW 102134473 A TW102134473 A TW 102134473A TW I515083 B TWI515083 B TW I515083B
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- adsorption layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Description
本發明係關於一種研磨墊，其係使用在半導體零件、電子零件等所用之半導體晶圓等被研磨構件的研磨步驟。更詳細而言，係關於一種研磨墊，其在被研磨構件的研磨加工中，可提昇其作業效率，同時可提高研磨面的平坦性。 The present invention relates to a polishing pad which is used in a polishing step of a member to be polished such as a semiconductor wafer used for a semiconductor component or an electronic component. More specifically, it relates to a polishing pad which can improve the work efficiency in the polishing process of the member to be polished and at the same time improve the flatness of the polished surface.
半導體晶圓、顯示器用玻璃基板、硬碟用基板等半導體零件、電子零件的製造製程中，包含其表面的平坦化、鏡面化用之研磨步驟。研磨步驟中，一般係使被研磨構件固持在研磨裝置之一個平台，並將研磨墊固定在另一個平台，一邊供給研磨漿，一邊使被研磨構件與研磨墊以加壓之狀態相對地滑動而進行。 In a manufacturing process of a semiconductor component such as a semiconductor wafer, a glass substrate for a display, or a substrate for a hard disk, and an electronic component, a polishing step for planarizing and mirroring the surface is included. In the polishing step, generally, the member to be polished is held on one platform of the polishing device, and the polishing pad is fixed to the other platform, and while the slurry is supplied, the member to be polished and the polishing pad are relatively slid in a pressurized state. get on.
在此，就研磨墊對平台之固定方法而言，以往係透過黏著帶等黏著劑而黏著固定。然而，該固定方法在研磨墊的固定作業或交換作業上頗為耗時，成為大幅降低研磨步驟的作業效率之主要原因。也就是說，將研磨墊黏著固定於平台時，為了確保研磨墊的平坦度，必需一邊注意使平台與研磨墊之間不產生空氣層，一邊慢慢地貼 附。然後，平台與黏著帶之間形成空氣層時，必需將黏著帶暫時剝離並將空氣層消除後再度貼附，造成時間的損失。 Here, as for the method of fixing the polishing pad to the stage, it has been conventionally adhered and fixed by an adhesive such as an adhesive tape. However, this fixing method is quite time consuming in the fixing work or the exchange work of the polishing pad, and is a factor that greatly reduces the work efficiency of the polishing step. In other words, when the polishing pad is adhered to the platform, in order to ensure the flatness of the polishing pad, it is necessary to pay attention to the fact that no air layer is generated between the platform and the polishing pad, and the sticker is slowly attached. Attached. Then, when an air layer is formed between the platform and the adhesive tape, the adhesive tape must be temporarily peeled off and the air layer is removed and attached again, resulting in a loss of time.
又，研磨墊的交換作業中，需要將舊的研磨墊從平台剝離，但這時會有黏著劑殘留在平台之情形。此時，在固定新研磨墊之前，需要將殘留在平台的黏著劑使用溶劑等除去並清掃之步驟，交換作業成為耗時者。 Further, in the exchange work of the polishing pad, it is necessary to peel the old polishing pad from the stage, but there is a case where the adhesive remains on the stage. At this time, before the new polishing pad is fixed, the adhesive remaining on the stage needs to be removed and cleaned using a solvent or the like, and the exchange operation becomes a time consuming person.
相對於此種以往的黏著劑之研磨墊，本案發明者等開發一種可容易進行研磨墊的固定/交換作業之研磨墊(專利文獻1)。該研磨墊如第2圖所示，係在研磨層的背面(平台側之面)設置有特定構成之吸附材。該吸附材如同字面，藉由其吸附作用而將研磨墊固定在平台，與以往所用之黏著劑之方式(藉黏性而固定)不同，從平台剝離時，不會殘留有殘留物。又，可容易進行剝離後之再貼附，因此可順遂地進行研磨墊之剝離/固定，並可有效率地進行交換作業。 The inventors of the present invention have developed a polishing pad which can easily perform the fixing/exchange operation of the polishing pad with respect to the polishing pad of the conventional adhesive (Patent Document 1). As shown in Fig. 2, the polishing pad is provided with an adsorbent having a specific structure on the back surface (surface on the platform side) of the polishing layer. The adsorbent material is literally, and the polishing pad is fixed to the platform by its adsorption. Unlike the adhesive used in the past (fixed by adhesion), no residue remains in the peeling from the platform. Moreover, since it can be easily attached after peeling, the peeling/fixing of the polishing pad can be performed smoothly, and the exchange work can be performed efficiently.
[專利文獻1]日本新型專利註冊第3166396號說明書 [Patent Document 1] Japanese New Patent Registration No. 3166396
由於半導體零件的高密度化、高纖細化，故對於研磨製品的高平坦度之要求逐漸嚴格。通常，對於研磨精度之要求，認為係因為被研磨材的研磨面之環境改善，尤其係研磨劑(研磨漿)之特性改善居多。 Due to the high density and high fiber refinement of semiconductor components, the requirements for high flatness of abrasive products are becoming stricter. In general, the requirements for the polishing accuracy are considered to be due to the improvement of the environment of the abrasive surface of the material to be polished, in particular, the improvement of the characteristics of the abrasive (polishing slurry).
然而，亦應考慮研磨墊的狀態對研磨精度 之影響，尤其係考慮到近年來，晶圓、顯示板的大直徑化、大面積化之進展，而僅藉研磨劑的改良而難以充分對應。在此，本發明係提供一種具備上述吸附層之研磨墊，其可幫助研磨面之高精度化，並可對應研磨面之大面積化。 However, the state of the polishing pad should also be considered for the grinding accuracy. In particular, in recent years, the progress of the increase in the diameter and the area of the wafer and the display panel has been considered, and it has been difficult to sufficiently respond only by the improvement of the polishing agent. Here, the present invention provides a polishing pad including the above-described adsorption layer, which can contribute to high precision of the polishing surface and can correspond to a large area of the polishing surface.
本發明者等為了上述目的，依據具備吸附材之依據本發明者等之研磨墊的構成，調整各構成之性狀並檢討對研磨性能之作用。尤其著眼於構成吸附材之吸附層及基材之各個特性對研磨性能之影響並進行檢討而思及本發明。 In order to achieve the above-mentioned object, the inventors of the present invention adjusted the properties of the respective compositions in accordance with the configuration of the polishing pad according to the present invention, which has an adsorbent, and examined the effect on the polishing performance. In particular, the present invention has been considered in view of the influence of the characteristics of the adsorption layer and the substrate constituting the adsorbent on the polishing performance.
也就是說，本發明係關於一種研磨墊，其係藉由將含有基材和吸附層之吸附材、與研磨層接合而成者，其中，前述吸附層係包括藉由使選自下列者的至少1種聚矽氧交聯而成的組成物：係包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷之聚矽氧、以及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷之聚矽氧，前述吸附層之表面粗糙度的平均值Sa為0.02至0.06μm。 That is, the present invention relates to a polishing pad which is obtained by bonding an adsorption material containing a substrate and an adsorption layer to an abrasive layer, wherein the adsorption layer is included by selecting from the following a composition obtained by cross-linking at least one polyfluorene oxide: a polyfluorene oxide containing a linear polyorganosiloxane having a vinyl group at both ends, and a linear chain having a vinyl group at both ends and a side chain a polyorganosiloxane of a polyorganosiloxane, a polyoxyxylene containing a branched polyorganosiloxane having a vinyl group at the terminal, and a branched polyorganosiloxane having a vinyl group at the terminal and side chains. The polysiloxane, the average value Sa of the surface roughness of the adsorption layer is 0.02 to 0.06 μm.
以下，詳細說明本發明。如同上述，本發明係關於藉由限定與吸附層的平台接觸之面的表面粗糙度，而可進行適宜的研磨作業之研磨墊。具備依據本發明 者等之吸附材的研磨墊，在固定於平台時，具有吸附層作用所致之剪切力(橫方向之固定強度)高，而剝離力(縱方向之固定強度)低之特性。藉由此種對於平台之剪切力與剝離力之關係，發揮使研磨墊之交換作業容易，同時抑制研磨作業中之研磨墊偏移之效果。又，雖然說對平台之剝離力低，其僅係指相對而言之意，並非會使研磨作業中研磨墊脫落、或吸附層與平台之間產生空間之程度的微弱之力。 Hereinafter, the present invention will be described in detail. As described above, the present invention relates to a polishing pad which can perform a suitable polishing operation by defining the surface roughness of the surface in contact with the platform of the adsorption layer. Having the invention When the polishing pad of the adsorbent material is fixed to the stage, the shearing force (fixed strength in the transverse direction) due to the action of the adsorbing layer is high, and the peeling force (fixed strength in the longitudinal direction) is low. Such a relationship between the shearing force and the peeling force of the platform exerts an effect of facilitating the exchange work of the polishing pad and suppressing the offset of the polishing pad during the polishing operation. Further, although the peeling force to the platform is low, it means only a relative force, and is not a weak force which causes the polishing pad to fall off during the polishing operation or the space between the adsorption layer and the stage.
惟，依據本發明者等之檢討，吸附層與平台之界面處在如上述之狀態時，吸附層之表面粗糙度可能對研磨作業時之研磨力的面內均勻性造成微小的影響。對該面內均勻性之影響雖不大，但對研磨面要求超高纖細的平坦度時、或被研磨面的面積增大時會造成無法忽視的影響。 However, according to the review by the inventors of the present invention, when the interface between the adsorption layer and the platform is in the above state, the surface roughness of the adsorption layer may have a slight influence on the in-plane uniformity of the polishing force during the polishing operation. Although the influence on the in-plane uniformity is not large, when the polishing surface is required to have an ultra-high slender flatness or the area of the polished surface is increased, the influence cannot be ignored.
本發明之具備吸附材的研磨墊係因上述理由而限定吸附層之表面粗糙度。關於該表面粗糙度，需要為0.06μm以下。若超過0.06μm，則可能對研磨力之面內均勻性產生影響。另一方面，關於其下限值，本應不受制限，但可製造之最小值為0.02μm。又，在此之表面粗糙度係算術平均粗糙度(Ra)。 The polishing pad provided with the adsorbent of the present invention limits the surface roughness of the adsorbent layer for the above reasons. The surface roughness needs to be 0.06 μm or less. If it exceeds 0.06 μm, it may affect the in-plane uniformity of the polishing force. On the other hand, the lower limit value should not be limited, but the minimum value that can be manufactured is 0.02 μm. Further, the surface roughness here is an arithmetic mean roughness (Ra).
又，吸附層之表面粗糙度意指吸附層面內之平均，係針對吸附層之中心部、端部(外周部)等複數個部分的表面粗糙度之測定值的平均。較佳係採用針對吸附層之中心部、兩端部之3點之表面粗糙度的平均值。然後，為了發揮更適宜的研磨性能，較佳係吸附層之表面粗糙度 有均勻性。具體而言，關於吸附層之中心部之表面粗糙度(Sc)及吸附層之端部之表面粗糙度(So)，較佳係Sc與Sa之差、及So與Sa之差皆為0.02μm以下。又，關於吸附層之端部之表面粗糙度，較佳係研磨墊直徑之雙方之兩端具備前述關係。 Further, the surface roughness of the adsorption layer means an average of the measured values of the surface roughness of a plurality of portions such as the center portion and the end portion (outer peripheral portion) of the adsorption layer. It is preferable to use an average value of the surface roughness of three points at the center portion and both end portions of the adsorption layer. Then, in order to exert a more suitable polishing performance, it is preferred that the surface roughness of the adsorption layer There is uniformity. Specifically, the surface roughness (Sc) of the central portion of the adsorption layer and the surface roughness (So) of the end portion of the adsorption layer are preferably 0.02 μm from the difference between Sc and Sa, and So and Sa. the following. Further, the surface roughness of the end portion of the adsorption layer is preferably such that both ends of the polishing pad diameter have the aforementioned relationship.
關於吸附層之材質，基本上與應用上述依據本發明者等之以往的研磨墊者相同。也就是說，積層下述組成物而形成，該組成物係藉由使選自由包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含在兩末端及側鏈具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧、包含僅在末端具有乙烯基之分支狀聚有機矽氧烷之聚矽氧、以及包含在末端及側鏈具有乙烯基之分支狀聚有機矽氧烷之聚矽氧之至少1種聚矽氧交聯而成者。 The material of the adsorption layer is basically the same as that of the conventional polishing pad according to the present inventors. That is, a composition is formed by laminating a polyoxyl selected from a linear polyorganosiloxane having a vinyl group only at both ends, and is contained at both ends and side chains. a polyfluorene oxide having a linear linear polyorganosiloxane of a vinyl group, a polyoxyloxy group containing a branched polyorganosiloxane having a vinyl group only at the terminal, and a branch having a vinyl group at the terminal and the side chain The polyorganosiloxane is formed by crosslinking at least one polyfluorene oxygen.
就上述聚矽氧之具體例而言，直鏈狀聚有機矽氧烷之例可列舉[化1]之化合物。又，分支狀聚有機矽氧烷之例可列舉[化2]之化合物。 In the specific example of the above polyfluorene oxide, a compound of the linear polyorganosiloxane may be exemplified by [Chemical Formula 1]. Further, examples of the branched polyorganosiloxane include compounds of [Chem. 2].
[化1]、[化2]中，就取代基(R)之具體例而言，可列舉甲基、乙基、丙基等烷基，苯基、甲苯基等芳香基、或者與該等基之碳原子鍵結之部分或全部的氫原子經鹵原子、氰基等取代之同種或異種之未經取代或經取代的脂肪族不飽和基除外之1價烴基。較佳係至少50莫耳%為甲基。取代基可為異種或同種。又，該聚矽氧烷可為單獨或2種以上之混合物。 In the specific examples of the substituent (R), an alkyl group such as a methyl group, an ethyl group or a propyl group, an aromatic group such as a phenyl group or a tolyl group, or the like may be mentioned. A monovalent hydrocarbon group in which a part or all of hydrogen atoms of a carbon atom bonded to a carbon atom, a cyano group or the like are substituted with an unsubstituted or substituted aliphatic unsaturated group substituted with a halogen atom, a cyano group or the like. Preferably at least 50 mole percent is methyl. The substituents may be heterologous or homologous. Further, the polyoxyalkylene oxide may be used singly or in combination of two or more kinds.
又，構成吸附層之聚矽氧之數量平均分子量為30000至100000者具有適宜之吸附作用。惟，表面粗糙度之調整中，應用之聚矽氧之數量平均分子量與製造階段之鍛燒溫度會造成影響。為了容易發揮適宜的表面粗糙度，聚矽氧之數量平均分子量較佳係30000至60000。 Further, the number average molecular weight of the polyfluorene oxide constituting the adsorption layer is from 30,000 to 100,000, and has a suitable adsorption effect. However, in the adjustment of the surface roughness, the number average molecular weight of the applied polyoxane and the calcination temperature in the manufacturing stage may be affected. In order to easily exert a suitable surface roughness, the number average molecular weight of polyoxymethylene is preferably from 30,000 to 60,000.
然後，本發明中，關於與吸附層一起構成吸附材之基材的物性，較佳係設定為一定限制。基材係指 用以確保薄的含有有機物之吸附層的處理性之支撐構件。因此，基材原本並非考慮研磨墊之研磨性能而應用者，但依據本發明者等，藉由針對基材應用斷裂強度及斷裂伸度之適宜者，可發揮更適宜的研磨性能。在此，應設定之基材之物性係斷裂強度及斷裂伸度，較佳係斷裂強度為210至290MPa、斷裂伸度為80至130%。更佳係斷裂強度為210至240MPa、斷裂伸度為110至130%。又，該拉伸強度係乾燥時所測定之值。 In the present invention, the physical properties of the base material constituting the adsorbent material together with the adsorption layer are preferably set to be a certain limit. Substrate A support member for ensuring the handling of a thin organic-containing adsorption layer. Therefore, the substrate is not intended to be used in consideration of the polishing performance of the polishing pad. However, according to the present inventors, it is possible to exert a suitable polishing performance by applying a suitable breaking strength and elongation at break to the substrate. Here, the physical properties of the substrate to be set are the breaking strength and the elongation at break, and the breaking strength is preferably 210 to 290 MPa and the elongation at break is 80 to 130%. More preferably, the breaking strength is 210 to 240 MPa, and the elongation at break is 110 to 130%. Further, the tensile strength is a value measured at the time of drying.
基材係應用具有上述斷裂強度、斷裂伸度之片狀樹脂材料。具體而言，係聚酯、聚乙烯、聚苯乙烯、聚丙烯、耐綸、胺甲酸乙酯、聚二氯亞乙烯、聚氯乙烯等樹脂。較佳係聚酯系樹脂材料，聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)，特佳係PET。基材可為單層亦可為複數樹脂之多層構造。 As the substrate, a sheet-like resin material having the above-described breaking strength and elongation at break is used. Specifically, it is a resin such as polyester, polyethylene, polystyrene, polypropylene, nylon, urethane, polydivinylidene chloride or polyvinyl chloride. Preferred are polyester-based resin materials, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and particularly preferred PET. The substrate may be a single layer or a multilayer structure of a plurality of resins.
吸附材係由吸附層與基材所構成，吸附層之厚度較佳係20至30μm。又，基材之厚度較佳係50至200μm。基材與吸附層較佳係密著接合。 The adsorbent material is composed of an adsorption layer and a substrate, and the thickness of the adsorption layer is preferably 20 to 30 μm. Further, the thickness of the substrate is preferably from 50 to 200 μm. The substrate and the adsorption layer are preferably intimately bonded.
吸附材之製作，是將欲成為吸附層之含有聚矽氧成分之塗布液塗布在基材並鍛燒使聚有機矽氧烷交聯而形成吸附層。塗布液包含上述直鏈狀、分支狀聚有機矽氧烷化合物與交聯劑。交聯劑宜為公知者，例如可列舉有機氫聚矽氧烷。有機氫聚矽氧烷係1分子中至少具有3個與矽原子鍵結之氫原子者，實用上來看，較佳係含有總量之50重量%之分子中具有2個≡SiH鍵者，其餘為分子 中至少3個≡SiH鍵者。 The adsorbent material is produced by coating a coating liquid containing a polyfluorene-containing component to be an adsorption layer on a substrate and calcining to crosslink the polyorganosiloxane to form an adsorption layer. The coating liquid contains the above linear or branched polyorganosiloxane compound and a crosslinking agent. The crosslinking agent is preferably a known one, and examples thereof include an organic hydrogen polyoxyalkylene oxide. The organohydrogen polyoxyalkylene has at least three hydrogen atoms bonded to a ruthenium atom in one molecule, and practically, it is preferable to contain two ≡SiH bonds in 50% by weight of the total amount, and the rest Molecule At least 3 ≡SiH keys.
塗布液可含有交聯反應所用之鉑系觸媒。鉑系觸媒適宜使用公知者，例如可列舉四氯鉑酸、六氯鉑酸等氯鉑酸，氯鉑酸之醇化合物、醛化合物或者氯鉑酸與各種烯烴之錯鹽等。又，塗布液可為無溶劑型、溶劑型、乳劑型之任一形態。使用溶劑型塗布液時，較佳係塗布後乾燥而除去溶媒。塗布液塗布後之鍛燒，較佳係於120至180℃加熱60至150秒。 The coating liquid may contain a platinum-based catalyst used in the crosslinking reaction. A platinum-based catalyst is suitably used, and examples thereof include chloroplatinic acid such as tetrachloroplatinic acid and hexachloroplatinic acid, an alcohol compound of chloroplatinic acid, an aldehyde compound, or a wrong salt of chloroplatinic acid and various olefins. Further, the coating liquid may be in any form of a solventless type, a solvent type, or an emulsion type. When a solvent-based coating liquid is used, it is preferably dried after coating to remove the solvent. The calcination after application of the coating liquid is preferably carried out at 120 to 180 ° C for 60 to 150 seconds.
本發明之研磨墊係將研磨層接合於吸附材而形成。研磨層應用一般研磨墊所應用之研磨布。例如可應用耐綸、聚胺甲酸乙酯、聚對苯二甲酸乙二酯等所形成之不織布、發泡成形體等。又，其表面(研磨面)之形狀不限於平坦者，可適宜地形成用以保持研磨劑之溝等。成為研磨層之研磨布的厚度係使用0.5至3mm。 The polishing pad of the present invention is formed by bonding an abrasive layer to an adsorbent. The polishing layer is applied to a polishing cloth to which a general polishing pad is applied. For example, a nonwoven fabric, a foam molded body, or the like formed of nylon, polyurethane, polyethylene terephthalate or the like can be applied. Moreover, the shape of the surface (polishing surface) is not limited to a flat shape, and a groove for holding the polishing agent or the like can be suitably formed. The thickness of the polishing cloth to be the polishing layer is 0.5 to 3 mm.
研磨層與基材之接合方法可為公知方法，例如只要使用接著劑、黏著劑等將兩者接合即可。 The bonding method of the polishing layer and the substrate may be a known method, and for example, it may be bonded by using an adhesive, an adhesive or the like.
本發明之研磨墊，藉由吸附層之應用，而可提昇研磨墊之交換、固定作業之作業性，並且可謀求研磨面之高精度化。 According to the application of the adsorption layer, the polishing pad of the present invention can improve the workability of the polishing pad for exchange and fixation, and can achieve high precision of the polishing surface.
第1圖係本實施形態所使用之研磨裝置的示意圖。 Fig. 1 is a schematic view of a polishing apparatus used in the present embodiment.
第2圖係說明具備吸附材之研磨墊之構成之圖。 Fig. 2 is a view showing the configuration of a polishing pad having an adsorbent.
以下說明本發明之適宜的實施形態。本實施形態中，將構成相異之複數吸附材接合在研磨層製作研磨墊，評估該等之研磨特性。 Preferred embodiments of the present invention will be described below. In the present embodiment, a plurality of adsorbing materials having different compositions are bonded to a polishing layer to prepare a polishing pad, and the polishing properties are evaluated.
(吸附材之製作) (production of adsorbent material)
在含有各種樹脂材料(PET、PEN、PVC)之基材(厚度50μm、尺寸φ 810mm)，塗布含有由聚有機矽氧烷所成之聚矽氧成分之塗布液。塗布液係於包含僅在兩末端具有乙烯基之直鏈狀聚有機矽氧烷之聚矽氧(分子量30000)100重量份中含有交聯劑0.6重量份、鉑觸媒2重量份之無溶劑型聚矽氧液。將該塗布液塗布於基材之後，於150至160℃鍛燒100秒使聚矽氧交聯並形成吸附層。交聯後之吸附層的厚度皆為25μm。 A coating liquid containing a polyoxymethylene component made of polyorganosiloxane was applied to a substrate (thickness: 50 μm, size: φ 810 mm) containing various resin materials (PET, PEN, PVC). The coating liquid is a solvent-free solution containing 0.6 parts by weight of a crosslinking agent and 2 parts by weight of a platinum catalyst in 100 parts by weight of polyfluorene (molecular weight: 30,000) containing a linear polyorganosiloxane having a vinyl group at both ends. Type polyoxyl solution. After the coating liquid was applied to a substrate, it was calcined at 150 to 160 ° C for 100 seconds to crosslink the polyfluorene oxide and form an adsorption layer. The thickness of the adsorbed layer after crosslinking was 25 μm.
(研磨墊之製作) (Production of polishing pad)
成為研磨層之研磨布係汎用型麂皮風之研磨布(型號7355-000F)，係毛長(nap length)450μm、厚度1.37mm之圓形研磨布。將研磨層與吸附材接著並一體化成為研磨墊。研磨層與吸附材之接著係使用丙烯酸系接著劑而接合。 The polishing cloth to be an abrasive layer is a general-purpose type smear-type abrasive cloth (model 7355-000F), and is a circular abrasive cloth having a nap length of 450 μm and a thickness of 1.37 mm. The polishing layer and the adsorbent are then joined and integrated into a polishing pad. The adhesion between the polishing layer and the adsorbent is bonded using an acrylic adhesive.
針對所製造之複數種研磨墊，測定吸附層之表面粗糙度。表面粗糙度之測定係依據JIS B0601-1994，使用表面粗糙度測定器，以搬送速度0.1mm/秒、截取(cutoff)值0.08mm、測定長度1.6mm×5測定。然後，表面粗糙度測定後，使用各研磨墊進行矽晶圓之研磨，評估研磨特性。此評估內容係如下述。 The surface roughness of the adsorbed layer was measured for the plurality of polishing pads produced. The surface roughness was measured in accordance with JIS B0601-1994 using a surface roughness measuring instrument at a conveying speed of 0.1 mm/sec, a cutoff value of 0.08 mm, and a measuring length of 1.6 mm × 5. Then, after the surface roughness was measured, the polishing pad was polished using each polishing pad to evaluate the polishing characteristics. This evaluation is as follows.
(研磨傷痕評估) (grinding scar evaluation)
將研磨墊貼附於第1圖所示之研磨裝置之平台，實際研磨作為被研磨構件之矽晶圓(φ 8吋)。研磨步驟中，將研磨漿(將Glanzox(Fujimi Incorporated股份有限公司製)以純水稀釋30倍)滴入(流量150ml/分鐘)研磨層中。其他研磨條件係如同下述。 The polishing pad was attached to the stage of the polishing apparatus shown in Fig. 1, and the wafer (φ 8 吋) as the member to be polished was actually polished. In the polishing step, a slurry (Glanzox (manufactured by Fujimi Incorporated) diluted 30 times with pure water) was dropped into a polishing layer (flow rate: 150 ml/min). Other grinding conditions are as follows.
．研磨壓力：0.163kgf/cm2。 . Grinding pressure: 0.163 kgf/cm 2 .
研磨墊之旋轉速度：45rpm Rotating pad rotation speed: 45rpm
被研磨構件之旋轉速度：47rpm。 Rotation speed of the member to be polished: 47 rpm.
．頭部之搖動速度：250mm/分鐘。 . Shaking speed of the head: 250mm/min.
．研磨時間：3分鐘 . Grinding time: 3 minutes
研磨後，將晶圓之被研磨面以純水洗淨，在無塵狀態乾燥後，觀察研磨面，計算傷痕的大小與數量，從100分滿分以減分法評估。此時，大的傷痕減分較大。關於評估結果，將95分以上100分以下作為「◎」，將90分以上未達95分作為「○」，將85分以上未達90分作為「△」，進一步將未達85分作為「×」。 After the polishing, the polished surface of the wafer was washed with pure water, and after drying in a dust-free state, the polished surface was observed, and the size and number of the flaws were counted, and the score was evaluated from the 100 points. At this time, the large scar is reduced by a large amount. As for the evaluation result, 95 points or more and 100 points or less are referred to as "◎", 90 points or more is less than 95 points as "○", and 85 points or more is less than 90 points as "△", and further less than 85 points is regarded as " ×".
(面內均勻性評估) (in-plane uniformity evaluation)
進行研磨後之矽晶圓表面之氧化膜的膜厚測定，評估研磨面之均勻性。氧化膜的膜厚測定係使用干擾式膜厚測定裝置(大塚電子公司製)。面內均勻性係使用矽晶圓上堆積有1μm熱氧化膜之樣品，以與上述相同研磨條件進行研磨1分鐘，從晶圓上的特定位置25點之研磨前後之膜厚測定值求得研磨速度最大值(Rmax)與研磨速度最小值 (Rmin)，依據下述式計算出面內均勻性。關於評估結果，將5%以下者作為「◎」，將超過5%且8%以下者作為「○」，將10%以下者作為「△」，將超過10%者作為「×」。 The film thickness of the oxide film on the surface of the wafer after the polishing was measured, and the uniformity of the polished surface was evaluated. For the measurement of the film thickness of the oxide film, an interference type film thickness measuring device (manufactured by Otsuka Electronics Co., Ltd.) was used. The in-plane uniformity was obtained by polishing a sample having a thermal oxide film of 1 μm deposited on a wafer, and polishing it for 1 minute under the same polishing conditions as described above, and obtaining a roughness from a film thickness measurement value before and after polishing at a specific position on the wafer at 25 points. The maximum velocity (R max ) and the minimum polishing velocity (R min ) were calculated for in-plane uniformity according to the following formula. For the evaluation results, 5% or less will be referred to as "◎", those exceeding 5% and 8% or less will be referred to as "○", 10% or less will be referred to as "△", and those exceeding 10% will be referred to as "X".
[數1]面內均勻性(%)=(Rmax-Rmin)/(Rmax+Rmin)×100 [Number 1] In-plane uniformity (%) = (R max - R min ) / (R max + R min ) × 100
以上評估結果顯示於表1。又，亦針對作為比較例之以往的附有吸附材之研磨墊進行以上物性測定及研磨特性評估。 The above evaluation results are shown in Table 1. Moreover, the above physical property measurement and polishing property evaluation were also performed about the conventional polishing pad with the adsorption material as a comparative example.
從表1可確認，為了使傷痕評估與面內均勻性雙方皆可接受，作為其必要條件，必需限制吸附層之表面粗糙度之平均。此係因比較例之傷痕評估雖為良好，但面內均勻性差。然後，為了使面內均勻性成為更高精度者，需要求確保吸附層之表面粗糙度之均勻性，較佳係中心部(Sc)與端部(So)之差較小者。再者，若使針對吸附層之基材之斷裂強度、斷裂伸度為適宜者，則顯示出更佳研磨特性。 It can be confirmed from Table 1 that in order to make both the flaw evaluation and the in-plane uniformity acceptable, it is necessary to limit the average of the surface roughness of the adsorption layer as a necessary condition. This is because the scar evaluation of the comparative example is good, but the in-plane uniformity is poor. Then, in order to make the in-plane uniformity more precise, it is necessary to ensure uniformity of the surface roughness of the adsorption layer, and it is preferable that the difference between the center portion (Sc) and the end portion (So) is small. Further, if the breaking strength and the elongation at break of the substrate for the adsorption layer are appropriate, it is preferable to exhibit better polishing characteristics.
如同以上說明，本發明之研磨墊一邊具備因吸附材的設置而得之便利性，並可形成平坦性優良之高品質研磨面。若依據本發明，則對於大直徑化、大面積化有所進展之晶圓、顯示板，亦可形成高精度研磨面。 As described above, the polishing pad of the present invention has the convenience of being provided by the adsorption material, and can form a high-quality polished surface excellent in flatness. According to the present invention, it is possible to form a high-precision polishing surface for a wafer or a display panel having a large diameter and a large area.
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| JP6917058B2 (en) * | 2017-06-06 | 2021-08-11 | 丸石産業株式会社 | Polishing method using a polishing pad provided with an adsorption layer |
| WO2019012391A1 (en) * | 2017-07-11 | 2019-01-17 | 3M Innovative Properties Company | Abrasive articles including conformable coatings and polishing system therefrom |
| JP7026942B2 (en) * | 2018-04-26 | 2022-03-01 | 丸石産業株式会社 | Underlay for polishing pad and polishing method using the underlay |
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| JP7403174B2 (en) * | 2019-03-20 | 2023-12-22 | 丸石産業株式会社 | Surface plate for polishing equipment, polishing equipment, and polishing method |
| JPWO2021157597A1 (en) | 2020-02-07 | 2021-08-12 | ||
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