TWI512885B - Substrate processing device - Google Patents

Substrate processing device Download PDF

Info

Publication number
TWI512885B
TWI512885B TW102137720A TW102137720A TWI512885B TW I512885 B TWI512885 B TW I512885B TW 102137720 A TW102137720 A TW 102137720A TW 102137720 A TW102137720 A TW 102137720A TW I512885 B TWI512885 B TW I512885B
Authority
TW
Taiwan
Prior art keywords
substrate
tray
opening
processing apparatus
holder
Prior art date
Application number
TW102137720A
Other languages
Chinese (zh)
Other versions
TW201432845A (en
Inventor
Tetsuro Toda
tomoko Osaka
Takayuki Saito
Yo Tanaka
Shinji Takagi
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of TW201432845A publication Critical patent/TW201432845A/en
Application granted granted Critical
Publication of TWI512885B publication Critical patent/TWI512885B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

基板處理裝置Substrate processing device

本發明係關於對被處理基板進行濺鍍、CVD或蝕刻等之處理之真空處理裝置等之基板處理裝置，尤其關於在基板處理裝置中使用一面保持被處理基板一面進行搬運之基板托盤的基板處理裝置。The present invention relates to a substrate processing apparatus such as a vacuum processing apparatus that performs processing such as sputtering, CVD, or etching on a substrate to be processed, and more particularly to a substrate processing of a substrate tray that is transported while holding a substrate to be processed in a substrate processing apparatus. Device.

在真空處理裝置中，為了提高生產性，將複數片之基板處理同時搬運至處理室，或為了不變更裝置構成而處理外形尺寸不同的基板，使用可以保持基板並進行搬運的基板托盤。In the vacuum processing apparatus, in order to improve productivity, a plurality of substrates are processed and transported to a processing chamber at the same time, or a substrate tray having a different outer shape is processed without changing the device configuration, and a substrate tray capable of holding the substrate and transporting the substrate is used.

圖12A~12C係表示以往之基板托盤之第1例(參照專利文獻1)。圖12A~12C表示具備用以保持小基板之座孔702，呈碟形狀之基板托盤701。藉由圖12A~12C所記載之保持托盤701，像8吋、6吋這樣小的基板也可以設置在直徑12吋用基板處理裝置。12A to 12C show a first example of a conventional substrate tray (see Patent Document 1). 12A to 12C show a substrate tray 701 having a dish shape 702 for holding a small substrate. According to the holding tray 701 shown in FIGS. 12A to 12C, a substrate such as 8 吋 or 6 小的 can be provided in a substrate processing apparatus having a diameter of 12 。.

圖13A、13B係表示以往之基板搬運用托盤之第2例(參照專利文獻2)。圖13A、13B表示以具有絕緣性並且具有柔軟性之物質805構成由具有凹部802且熱傳 導性優良之物質所構成之托盤本體801之一部分表面的基板托盤801。在圖13A、13B中，803為上推用銷通過之貫通孔，804為用以吸附基板之貫通孔，806為具有耐蝕性或耐濺鍍性之物質。若藉由圖13A、13B所記載之基板搬運用托盤時，可使基板和托盤本體801之間的密接性及熱傳導性變佳，藉由使基板之溫度均勻，可以縮小電路圖案之線寬等之偏差。13A and 13B show a second example of a conventional substrate transfer tray (see Patent Document 2). 13A, 13B show that the material 805 having insulation and flexibility is constituted by having a concave portion 802 and heat transfer A substrate tray 801 on a part of the surface of the tray body 801 which is composed of a substance having excellent conductivity. In Figs. 13A and 13B, 803 is a through hole through which the push pin is pushed, 804 is a through hole for adsorbing the substrate, and 806 is a material having corrosion resistance or splash resistance. According to the substrate transfer tray shown in FIGS. 13A and 13B, the adhesion between the substrate and the tray main body 801 and the thermal conductivity can be improved, and the temperature of the substrate can be made uniform, thereby reducing the line width of the circuit pattern. Deviation.

再者，在成膜裝置等之真空處理裝置中，必須因應處理內容進行處理中之基板的溫度管理。因此，一般使用利用使用冷卻水等之溫度控制手段對保持基板或基板托盤之保持器進行溫度控制，並藉由與該保持器之熱傳導，進行基板之溫度管理之技術。Further, in the vacuum processing apparatus such as a film forming apparatus, it is necessary to perform temperature management of the substrate during processing in accordance with the processing contents. Therefore, it is generally used to control the temperature of the substrate by holding the holder of the holding substrate or the substrate tray by temperature control means using cooling water or the like, and performing heat management of the substrate by heat conduction with the holder.

但是，在真空中，比起大氣中，熱傳導效率在零件和零件之微小間隙惡化。因此，真空處理裝置，尤其在濺鍍裝置等之製程壓力低的裝置中，為了進行成膜等之真空處理中之基板之溫度管理，必須藉由例如對基板之背面或托盤之背面供給冷卻氣體等之熱傳導媒體之方法等，改善被溫度調整之保持器和基板之間之熱傳導效率。However, in a vacuum, the heat transfer efficiency deteriorates in minute gaps between parts and parts compared to the atmosphere. Therefore, in the vacuum processing apparatus, particularly in a device having a low process pressure such as a sputtering apparatus, in order to perform temperature management of the substrate in vacuum processing such as film formation, it is necessary to supply cooling gas, for example, to the back surface of the substrate or the back surface of the tray. The method of thermally conducting the medium, etc., improves the heat transfer efficiency between the temperature-adjusted holder and the substrate.

圖14係表示以往之基板搬運用托盤之第3例(參照專利文獻3)。圖14揭示有基板搬運用托盤901，其具備有在基板載置面形成對應於基板S之外形之至少一個凹部911，並在該凹部911之底面配置環狀之密封手段902；對密封手段902推壓藉由掉落至凹部911而被設置之基板S之外周緣部的推壓手段903。並且，在圖14所 記載之基板搬運用托盤901中，開設有與凹部911連通之至少一條氣體通路913a、913b，作為密封手段902而發揮功能之O型環902被形成在凹部911之底面911a，被配置在具有大於O型環902之線徑之寬度的環狀溝912。並且，在圖14中，B為螺栓，S為基板，911b為基板S背面和凹部911底面之間的空間，931為中央開口。FIG. 14 shows a third example of a conventional substrate transfer tray (see Patent Document 3). FIG. 14 discloses a substrate transfer tray 901 including at least one concave portion 911 having a shape corresponding to the substrate S on the substrate mounting surface, and a ring-shaped sealing means 902 disposed on the bottom surface of the concave portion 911; the sealing means 902 The pressing means 903 of the outer peripheral portion of the substrate S which is placed by the recess 911 is pressed. And, in Figure 14 In the substrate transfer tray 901 described above, at least one gas passage 913a and 913b communicating with the recessed portion 911 is opened, and an O-ring 902 functioning as the sealing means 902 is formed on the bottom surface 911a of the recessed portion 911, and is disposed to be larger than An annular groove 912 having a width of a wire diameter of the O-ring 902. Further, in Fig. 14, B is a bolt, S is a substrate, 911b is a space between the back surface of the substrate S and the bottom surface of the concave portion 911, and 931 is a central opening.

圖15係表示將基板收容於基板收容孔之托盤配置在基板承載器上，以高效率冷卻托盤之電漿處理裝置之第4例(參照專利文獻4)。圖15之電漿處理裝置係藉由夾緊環600所產生之推壓，依據O型環606、607A~607B密閉托盤615之下面615c和托盤支撐面628之間的空間密閉。並且，在圖15中，615a為托盤本體，615b為上面，615c為下面，615d為孔壁，615e為定位缺口，619A~619D為基板收容孔，621為基板支撐部，621a為上面，621b為前端面，623為介電體板，625為間隔物板，626為引導筒體，627為接地屏蔽，628為托盤支撐面，629A~629D為基板載置部，631為基板載置面，636為圓形開口，643為直流電壓施加機構，644為供給孔，645為導熱氣體供給機構，600為夾緊環，604、605A~605D為收容溝，606、607A~607D為O型環，608A、608B為供給孔。15 is a fourth example of a plasma processing apparatus in which a tray in which a substrate is housed in a substrate housing hole is placed on a substrate carrier and the tray is cooled with high efficiency (see Patent Document 4). The plasma processing apparatus of Fig. 15 is sealed by the clamping ring 600, and the space between the lower surface 615c of the sealed tray 615 and the tray supporting surface 628 is sealed according to the O-rings 606, 607A to 607B. Further, in Fig. 15, 615a is the tray body, 615b is the upper surface, 615c is the lower surface, 615d is the hole wall, 615e is the positioning notch, 619A-619D is the substrate receiving hole, 621 is the substrate supporting portion, 621a is the upper surface, 621b is The front end surface, 623 is a dielectric plate, 625 is a spacer plate, 626 is a guiding cylinder, 627 is a grounding shield, 628 is a tray supporting surface, 629A-629D is a substrate mounting portion, 631 is a substrate mounting surface, 636 It is a circular opening, 643 is a DC voltage applying mechanism, 644 is a supply hole, 645 is a heat conduction gas supply mechanism, 600 is a clamping ring, 604, 605A-605D are a receiving groove, and 606, 607A-607D are an O-ring, 608A 608B is a supply hole.

[先行技術文獻][Advanced technical literature] [專利文獻][Patent Literature]

專利文獻1：日本特開2008-021686號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-021686

專利文獻2：日本特開2002-313891號公報Patent Document 2: Japanese Laid-Open Patent Publication No. 2002-313891

專利文獻3：日本特開2010-177267號公報Patent Document 3: Japanese Laid-Open Patent Publication No. 2010-177267

專利文獻4：日本特開2010-225775號公報Patent Document 4: Japanese Laid-Open Patent Publication No. 2010-225775

但是，如專利文獻1般僅放置基板而不固定之基板托盤701中，雖然有可以使質量變輕之優點，但是有在搬運中基板移動之虞。在專利文獻2中，使由形成有光阻光罩之LaTiO3 等所構成之基板盛放在托盤本體801之凹部802。設置在托盤本體801之凹部802之物質805，因具有絕緣性並具有柔軟性，故藉由其絕緣性基板與托盤本體801絕緣，藉由基板帶電之靜電，基板以靜電力拉引至托盤本體801並被固定。但是，即使在專利文獻2之基板托盤中，為了使基板藉由靜電力被拉引至托盤本體801並被固定，因基板為由LaTiO3 所構成之強介電體，並且必須施加電場使其基板表面帶電，產生靜電，故在對裝置施加高頻電力之基板處理中，首先基板係被固定於托盤本體801者，並非解決在基板處理前之搬運中基板移動之問題，再者有於基板並非強介電體之時則無效果之問題。However, in the substrate tray 701 in which only the substrate is placed and not fixed as in Patent Document 1, there is an advantage that the mass can be made light, but there is a possibility that the substrate moves during transportation. In Patent Document 2, a substrate made of LaTiO 3 or the like in which a photoresist mask is formed is placed in a concave portion 802 of the tray main body 801. The substance 805 disposed in the recess 802 of the tray body 801 is insulated and flexible, so that the insulating substrate is insulated from the tray body 801, and the substrate is electrostatically pulled to the tray body by the static electricity charged by the substrate. 801 is fixed. However, even in the substrate tray of Patent Document 2, in order to cause the substrate to be drawn to the tray body 801 by electrostatic force and fixed, the substrate is a ferroelectric material composed of LaTiO 3 and an electric field must be applied thereto. Since the surface of the substrate is charged and static electricity is generated, in the substrate processing for applying high-frequency power to the device, first, the substrate is fixed to the tray body 801, and the problem of substrate movement during transportation before the substrate processing is not solved, and the substrate is further disposed on the substrate. It is not an effect when it is not a strong dielectric.

再者，為了進行成膜等之真空處理中之基板溫度管理，必須在基板之背面密封熱傳導媒體。Further, in order to perform substrate temperature management in vacuum processing such as film formation, it is necessary to seal the heat transfer medium on the back surface of the substrate.

在專利文獻3中，因可以螺栓B對基板托盤901推壓基板S並在基板S背面密封熱傳導媒體，故有可以改善基板之溫度控制性能之優點，無在基板之處理前之搬運中基板移動之問題。但是，在專利文獻3中，推壓手段903係藉由將螺栓B螺合於形成在基板托盤901之凹部911之外周的螺絲孔而被安裝。因此，當在螺栓B形成膜時，其膜剝落，有成為微粒之原因的課題。再者，因具有構造物，故有於成膜等之基板處理時產生影響之情形(例如，處理不均勻性)。然後，為了螺合螺栓B，由於必須要有相應於基板托盤901之螺絲孔的深度，故基板托盤901變厚，有基板托盤901之熱電阻變大之問題。若在基板S背面密封熱傳導媒體，基板托盤901之熱阻也大時，於真空處理中，則難以對用以載置保持基板S之基板托盤901之被溫度控制之基板保持器(無圖示)傳達流入至基板S之熱。因此，有無取得充分之基板之溫度控制性能的問題。In Patent Document 3, since the substrate S can be pressed against the substrate tray 901 by the bolt B and the heat conductive medium is sealed on the back surface of the substrate S, there is an advantage that the temperature control performance of the substrate can be improved, and the substrate is not moved during the handling of the substrate. The problem. However, in Patent Document 3, the pressing means 903 is attached by screwing the bolt B to a screw hole formed on the outer circumference of the concave portion 911 of the substrate tray 901. Therefore, when the film is formed in the bolt B, the film is peeled off, and there is a problem that it is a cause of the fine particles. Further, since the structure is provided, there is a case where the substrate is processed during film formation or the like (for example, processing unevenness). Then, in order to screw the bolts B, since the depth of the screw holes corresponding to the substrate tray 901 is necessary, the substrate tray 901 becomes thick, and the thermal resistance of the substrate tray 901 becomes large. When the heat transfer medium is sealed on the back surface of the substrate S, and the thermal resistance of the substrate tray 901 is also large, it is difficult to heat the substrate holder 901 for holding the substrate tray 901 holding the substrate S during the vacuum processing (not shown). ) conveying the heat flowing into the substrate S. Therefore, there is a problem in that sufficient temperature control performance of the substrate is obtained.

再者，在專利文獻3中，為了拆裝基板S，必須取下螺栓B。但是，在量產裝置中，為了拆裝基板S，時而拆卸時而栓緊螺栓B，拆裝裝置之構成變成複雜，故有無法容易進行基板S之拆裝的問題。Further, in Patent Document 3, in order to attach and detach the substrate S, it is necessary to remove the bolt B. However, in the mass production apparatus, in order to attach and detach the substrate S, the bolt B is tightened at the time of disassembly, and the configuration of the detachable device becomes complicated. Therefore, there is a problem that the substrate S cannot be easily attached or detached.

再者，在專利文獻4中，托盤615之下面615c和托盤支撐面628之間的空間，因藉由O型環606、607A~607B而被密閉，故藉由熱傳導媒體所產生之冷卻性能(溫度控制)優良。但是，基板602因僅在貫通於托盤 615之厚度方向之基板收容孔619A~619D收容基板，故在搬運中有基板602移動之虞。並且，在專利文獻4中，基板602直接被載置於各個的基板載置部629A~629D之基板載置面631，並且被靜電吸附。因此，於基板602為玻璃基板之時，有基板之吸附、脫離大幅度地需要時間之虞。Further, in Patent Document 4, the space between the lower surface 615c of the tray 615 and the tray supporting surface 628 is sealed by the O-rings 606, 607A to 607B, so that the cooling performance by the heat conducting medium ( Temperature control) is excellent. However, the substrate 602 is only in the tray Since the substrate accommodating holes 619A to 619D in the thickness direction of the 615 accommodate the substrate, the substrate 602 is moved during transportation. Further, in Patent Document 4, the substrate 602 is directly placed on the substrate mounting surface 631 of each of the substrate mounting portions 629A to 629D, and is electrostatically attracted. Therefore, when the substrate 602 is a glass substrate, it takes a long time for the substrate to be adsorbed and desorbed.

本發明之目的在於提供使用例如抑制微粒之產生或構造物對基板處理之影響，並藉由熱傳導媒體所產生之冷卻性能(溫度控制)優良，並且容易對應量產裝置而進行基板拆裝之基板托盤的基板處理裝置。It is an object of the present invention to provide a substrate which is excellent in cooling performance (temperature control) by a heat transfer medium, for example, and which is easy to produce a substrate by disassembly of a particle or a substrate. A substrate processing device for a tray.

申請專利範圍第1項所記載之發明係具有：處理室；用以將保持基板之基板托盤予以保持的托盤保持器；用以對上述處理室內導入製程氣體之氣體導入部；和用以對上述處理室內進行排氣之排氣部，以對上述基板進行處理的基板處理裝置，其特徵為：上述基板托盤具備托盤本體，和包含支撐上述基板之基板支撐部的基板支撐板，上述托盤本體包含以上述基板應處理之部分露出之方式保持上述基板之周端部的基板保持部，和以藉由磁力使上述托盤本體保持上述基板支撐板之方式，被配置在較上述基板保持部外側之磁鐵，上述基板托盤經密封構件藉由上述托盤保持器被保持。The invention described in claim 1 has a processing chamber, a tray holder for holding a substrate tray holding the substrate, a gas introduction portion for introducing a process gas into the processing chamber, and A substrate processing apparatus for processing an exhaust portion in a processing chamber for processing the substrate, wherein the substrate tray includes a tray main body and a substrate supporting plate including a substrate supporting portion for supporting the substrate, wherein the tray main body includes Holding the substrate holding portion at the peripheral end portion of the substrate so that the portion to be processed of the substrate is exposed, and the magnet disposed outside the substrate holding portion so that the tray main body is held by the substrate supporting plate by magnetic force The substrate tray is held by the sealing member via the tray holder.

申請專利範圍第2項所記載之發明係如申請 專利範圍第1項所記載之發明中，設置有夾緊上述托盤本體的周邊部之夾緊環，藉由上述夾緊環所產生之推壓，上述托盤本體之下面和上述托盤保持器之托盤本體支撐面被上述密封構件密封。The invention described in item 2 of the patent application scope is as for application According to the invention of the first aspect of the invention, the clamp ring for clamping the peripheral portion of the tray main body is provided, and the lower surface of the tray main body and the tray of the tray holder are provided by the pressing force generated by the clamp ring. The body support surface is sealed by the above sealing member.

申請專利範圍第3項所記載之發明係如申請專利範圍第1項所記載之發明中，上述夾緊環被配置成夾緊與上述密封構件相向之上述托盤本體之周邊部。The invention according to claim 1, wherein the clamp ring is disposed to clamp a peripheral portion of the tray body facing the sealing member.

申請專利範圍第4項所記載之發明係如申請專利範圍第1項所記載之發明中，上述密封構件為O型環。The invention according to claim 4, wherein the sealing member is an O-ring.

申請專利範圍第5項所記載之發明係如申請專利範圍第1項所記載之發明中，在上述托盤保持器和上述基板支撐板之至少一方，設置有用以將冷卻氣體導入至與上述基板之處理面相反側之面的氣體導入孔。The invention according to claim 5, wherein at least one of the tray holder and the substrate supporting plate is provided to introduce a cooling gas to the substrate. The gas introduction hole on the surface opposite to the processing surface.

申請專利範圍第6項所記載之發明係如申請專利範圍第1項所記載之發明中，上述磁鐵被埋設在上述托盤本體，在上述托盤本體設置有具有小於上述基板之外徑之第1直徑的第1開口部，和從上述第1開口部延伸至外側之環面，和藉由上述環面與上述第1開口部連接，具有大於上述基板外徑之第2直徑的第2開口部，上述基板保持部係藉由上述第1開口部、上述第2開口部及上述環面而形成，以上述環面和上 述基板支撐部夾持上述基板，並藉由上述第2開口部限制上述基板之位置。The invention according to claim 1, wherein the magnet is embedded in the tray main body, and the tray main body is provided with a first diameter having an outer diameter smaller than the outer diameter of the substrate. a first opening portion extending from the first opening portion to the outer side, and a second opening portion having a second diameter larger than the outer diameter of the substrate by the annular surface being connected to the first opening portion. The substrate holding portion is formed by the first opening, the second opening, and the annular surface, and the ring surface and the upper surface The substrate supporting portion sandwiches the substrate, and the position of the substrate is restricted by the second opening.

申請專利範圍第7項所記載之發明係如申請專利範圍第1項所記載之發明中，上述托盤本體埋設有軛鐵。According to the invention of claim 1, the yoke is embedded in the tray body.

申請專利範圍第8項所記載之發明係如申請專利範圍第1項所記載之發明中，上述托盤本體係以非磁性材料所形成。The invention described in claim 8 is the invention described in claim 1, wherein the tray system is formed of a non-magnetic material.

若藉由本案發明之申請專利範圍第1項所記載之發明時，則有藉由磁力使托盤本體保持基板支撐板，並以基板保持部和基板支撐部保持基板，藉此抑制微粒產生或構造物對基板處理之影響，且藉由熱傳導媒體所產生之冷卻性能(溫度控制)優良，並且可以容易對應量產裝置進行基板之拆裝的效果。再者，若藉由本案之請求項1所記載之發明時，因基板托盤經密封構件而藉由托盤保持器被保持，故不會有基板托盤和托盤保持器之間的冷卻氣體洩漏，冷卻氣體洩漏路徑被限定在基板托盤和基板之間，故有冷卻性能(溫度控制)優良之效果。According to the invention of the first aspect of the invention of the present invention, the tray main body is held by the magnetic force to hold the substrate supporting plate, and the substrate holding portion and the substrate supporting portion hold the substrate, thereby suppressing generation or formation of particles. The effect of the object on the substrate processing is excellent in the cooling performance (temperature control) generated by the heat transfer medium, and the effect of disassembly and assembly of the substrate can be easily performed in accordance with the mass production apparatus. According to the invention described in claim 1 of the present invention, since the substrate tray is held by the tray holder via the sealing member, there is no leakage of cooling gas between the substrate tray and the tray holder, and cooling is performed. The gas leakage path is defined between the substrate tray and the substrate, so that the cooling performance (temperature control) is excellent.

若藉由本案發明之申請專利範圍第2項所記載之發明時，藉由夾緊托盤本體之周邊部之夾緊環之推壓，托盤本體之下面和托盤保持器之托盤本體支撐面依據密封構件被密封，故不會有基板托盤和托盤保持器之間的 冷卻氣體洩漏，冷卻氣體洩漏路徑被限定於基板托盤和基板間，故有冷卻性能(溫度控制)優良之效果。According to the invention of the second aspect of the invention of the present invention, by pressing the clamping ring of the peripheral portion of the clamping tray body, the lower surface of the tray body and the tray body supporting surface of the tray holder are sealed according to The component is sealed so there is no between the substrate tray and the tray holder The cooling gas leaks and the cooling gas leakage path is limited between the substrate tray and the substrate, so that the cooling performance (temperature control) is excellent.

若藉由本案發明之申請專利範圍第3或4項所記載之發明時，因夾緊環配置成夾緊與密封構件相向之托盤本體之周邊部，故以密封構件為支點，基板托盤變形成上側成為凸狀，並且因基板托盤和托盤保持器之間的距離不會變大，故有冷卻性能(溫度控制)優良之效果。According to the invention described in the third or fourth aspect of the invention of the present invention, since the clamp ring is disposed to clamp the peripheral portion of the tray body facing the sealing member, the substrate tray is formed by using the sealing member as a fulcrum. The upper side is convex, and since the distance between the substrate tray and the tray holder does not become large, the cooling performance (temperature control) is excellent.

若藉由本案之申請專利範圍第5項所記載之發明時，藉由在托盤保持器及基板支撐板之至少一方設置用以將冷卻氣體導入至與基板之處理面相反側之面的氣體導入孔，具有可以有效率地冷卻基板之效果。According to the invention of the fifth aspect of the invention, the gas introduction of the surface of the tray holder and the substrate supporting plate for introducing the cooling gas to the surface opposite to the processing surface of the substrate is provided in at least one of the tray holder and the substrate supporting plate. The hole has an effect of efficiently cooling the substrate.

若藉由本案之申請專利範圍第6項所記載之發明時，基板保持部藉由具有小於基板之外徑之第1直徑的第1開口部，和從上述第1開口部延伸至外側之環面，和藉由上述環面而與第1開口部連接，具有大於上述基板之外徑之第2直徑的第2開口部形成基板保持部，具有可以確實地保持基板之效果。再者，因藉由磁鐵被埋設於托盤本體，可以使基板支撐板變薄，故有可以謀求提升基板冷卻性能之效果。According to the invention of the sixth aspect of the invention, the substrate holding portion has a first opening portion having a first diameter smaller than the outer diameter of the substrate, and a ring extending from the first opening portion to the outer side. The surface is connected to the first opening by the toroidal surface, and the second opening portion having the second diameter larger than the outer diameter of the substrate forms the substrate holding portion, and has an effect of reliably holding the substrate. Further, since the substrate supporting plate can be thinned by the magnet being embedded in the tray main body, it is possible to improve the cooling performance of the substrate.

若藉由本案之申請專利範圍第7項之發明時，因藉由在托盤本體埋設軛鐵，可以使基板托盤變薄，故有可以減少搬運機械臂等之搬運系統之負擔的效果。According to the invention of the seventh aspect of the present application, since the yoke is buried in the tray body, the substrate tray can be thinned, so that the load on the transport system such as the transfer arm can be reduced.

若藉由本案之申請專利範圍第8項所記載之發明時，藉由以非磁性材料形成托盤本體，具有可以抑制 於磁力線從軛鐵漏出之時磁力線作用至電漿處理空間之效果。According to the invention described in claim 8 of the present application, by forming the tray body with a non-magnetic material, it is possible to suppress The effect of magnetic lines of force acting on the plasma processing space when the magnetic lines of force leak from the yoke.

本發明之其他特徵及優點藉由參照附件圖面而作出的下述說明清楚可知。並且，附件圖面中，對相同或同樣之構成，賦予相同參照號碼。Other features and advantages of the present invention will become apparent from the following description taken in conjunction with the appended drawings. Further, in the attached drawings, the same reference numerals are assigned to the same or the same components.

S‧‧‧基板S‧‧‧Substrate

T‧‧‧靶材T‧‧‧ target

d1‧‧‧間隙D1‧‧‧ gap

1‧‧‧LL室1‧‧‧LL room

2‧‧‧SP室2‧‧‧SP room

3‧‧‧基板托盤3‧‧‧Substrate tray

4‧‧‧托盤保持器4‧‧‧Tray holder

5‧‧‧靶材保持器5‧‧‧target holder

6‧‧‧夾緊環6‧‧‧Clamping ring

7‧‧‧排氣部7‧‧‧Exhaust Department

8‧‧‧壓力計8‧‧‧ pressure gauge

31‧‧‧托盤本體31‧‧‧Tray body

32‧‧‧基板支撐板32‧‧‧Substrate support board

32a‧‧‧貫通孔32a‧‧‧through hole

32b‧‧‧基板支撐部32b‧‧‧Substrate support

33‧‧‧磁鐵33‧‧‧ magnet

34‧‧‧軛鐵34‧‧‧ yoke

35‧‧‧基板保持部35‧‧‧Substrate retention department

36‧‧‧開口36‧‧‧ openings

36a‧‧‧第1開口部36a‧‧‧1st opening

36b‧‧‧第2開口部36b‧‧‧2nd opening

42‧‧‧冷卻氣體導入路42‧‧‧Cooling gas introduction

80‧‧‧密封構件80‧‧‧ Sealing members

附件圖面包含在說明書中，構成其一部分，表示本發明之實施型態，與其記述皆用於說明本發明之原理。The accompanying drawings, which are incorporated in the claims

圖1為用以說明本發明之一個實施型態之成膜裝置的概略圖。Fig. 1 is a schematic view for explaining a film forming apparatus according to an embodiment of the present invention.

圖2A為用以說明基板托盤構造之第1構成例的概略剖面圖。2A is a schematic cross-sectional view for explaining a first configuration example of a substrate tray structure.

圖2B為用以說明基板托盤構造之第1構成例的概略剖面圖。2B is a schematic cross-sectional view for explaining a first configuration example of the substrate tray structure.

圖2C為用以說明基板托盤構造之第2構成例的概略剖面圖。2C is a schematic cross-sectional view for explaining a second configuration example of the substrate tray structure.

圖2D為用以說明基板托盤構造之第2構成例的概略剖面圖。2D is a schematic cross-sectional view for explaining a second configuration example of the substrate tray structure.

圖2E為用以說明以夾緊環保持基板托盤構造之第1構成例之狀態的概略剖面圖。2E is a schematic cross-sectional view for explaining a state in which the first configuration example of the substrate tray structure is held by the clamp ring.

圖2F為用以說明以夾緊環保持基板托盤構造之第1構成例之狀態的概略剖面圖。2F is a schematic cross-sectional view for explaining a state in which the first configuration example of the substrate tray structure is held by the clamp ring.

圖3A為用以例示性地說明使用單面2極磁鐵和1極磁鐵之構成例的洩漏磁場的圖示。3A is a view for exemplarily illustrating a leakage magnetic field using a configuration example of a single-sided two-pole magnet and a one-pole magnet.

圖3B為用以例示性地說明使用單面2極磁鐵和1極磁鐵之構成例的洩漏磁場的圖示。3B is a view for exemplarily illustrating a leakage magnetic field using a configuration example of a single-sided two-pole magnet and a one-pole magnet.

圖4為用以說明作為本發明之其他實施型態之基板托盤構造的概略剖面圖。Fig. 4 is a schematic cross-sectional view for explaining a structure of a substrate tray according to another embodiment of the present invention.

圖5為表示對基板托盤配置磁鐵之配置圖之一例的圖示。Fig. 5 is a view showing an example of a layout of a magnet disposed on a substrate tray;

圖6為例示基板托盤表面之洩漏磁通密度和不產生放電痕之區域的關係圖。Fig. 6 is a view showing a relationship between a leakage magnetic flux density on a surface of a substrate tray and a region where no discharge marks are generated.

圖7為例示基板溫度和基板托盤背面，即是基板托盤之磁性體和保持器之間隙尺寸之關係圖。Fig. 7 is a view showing the relationship between the substrate temperature and the back surface of the substrate tray, that is, the gap size between the magnetic body of the substrate tray and the holder.

圖8A為對托盤的基板設置方法之說明圖。Fig. 8A is an explanatory view showing a method of setting a substrate of a tray.

圖8B為對托盤的基板設置方法之說明圖。Fig. 8B is an explanatory view of a method of arranging a substrate of a tray.

圖9A為例示使用基板托盤而保持複數片之基板的狀態圖。9A is a view showing a state in which a substrate of a plurality of sheets is held using a substrate tray.

圖9B為例示使用基板托盤而保持複數片之基板的狀態圖。9B is a view showing a state in which a substrate of a plurality of sheets is held using a substrate tray.

圖10A為例示基板托盤表面之洩漏磁通密度之測定狀態之圖示。Fig. 10A is a view illustrating a state of measurement of a leakage magnetic flux density on a surface of a substrate tray.

圖10B為例示基板托盤表面之洩漏磁通密度之測定狀態之圖示。Fig. 10B is a view exemplifying a measurement state of the leakage magnetic flux density on the surface of the substrate tray.

圖11為例示使用基板托盤而在基板上成膜之後的基板托盤之表面狀態的圖示。FIG. 11 is a view illustrating a surface state of a substrate tray after film formation on a substrate using a substrate tray.

圖12A為表示以往之基板托盤之第1例(專利文獻1)的圖示。FIG. 12A is a view showing a first example (Patent Document 1) of a conventional substrate tray.

圖12B為表示以往之基板托盤之第1例(專利文獻1)的圖示。FIG. 12B is a view showing a first example (Patent Document 1) of a conventional substrate tray.

圖12C為表示以往之基板托盤之第1例(專利文獻1)的圖示。FIG. 12C is a view showing a first example (Patent Document 1) of a conventional substrate tray.

圖13A為表示以往之基板托盤之第2例(專利文獻2)的圖示。FIG. 13A is a view showing a second example (Patent Document 2) of a conventional substrate tray.

圖13B為表示以往之基板托盤之第2例(專利文獻2)的圖示。FIG. 13B is a view showing a second example (Patent Document 2) of a conventional substrate tray.

圖14為表示以往之基板托盤之第3例(專利文獻3)的圖示。FIG. 14 is a view showing a third example (Patent Document 3) of a conventional substrate tray.

圖15為表示以往之基板托盤之第4例(專利文獻4)的圖示。FIG. 15 is a view showing a fourth example (Patent Document 4) of a conventional substrate tray.

以下，針對用以實施本發明之型態，參照圖面予以說明。Hereinafter, the form for carrying out the invention will be described with reference to the drawings.

參照圖1，說明本發明之一實施型態之濺鍍裝置之構成。該濺鍍裝置包含經閘閥11而能夠連通地被連接之LL室(裝載鎖定室)1和SP室(濺鍍室)2。濺鍍裝置之SP室2具備有處理腔室21、載置保持基板S之基板托盤3之托盤保持器4、用以將濺鍍粒子成膜在基板S上之靶材T之靶材保持器5。在此，托盤保持器4及靶材保持器 5係被配置在處理腔室21內。Referring to Fig. 1, a configuration of a sputtering apparatus according to an embodiment of the present invention will be described. This sputtering apparatus includes an LL chamber (load lock chamber) 1 and an SP chamber (sputter chamber) 2 that are communicably connected via a gate valve 11. The SP chamber 2 of the sputtering apparatus is provided with a processing chamber 21, a tray holder 4 on which the substrate tray 3 holding the substrate S is placed, and a target holder for forming the target T on the substrate S by sputtering particles. 5. Here, the tray holder 4 and the target holder The 5 series is disposed in the processing chamber 21.

托盤保持器4係藉由上下機構41而能夠上下移動，成為於調整靶材T和基板S之距離(以下，稱為T/S間距離)，或搬入及搬出保持基板S之基板托盤3之時，可以藉由上下機構41上下移動。並且，在本實施形態中，針對T/S間距離或搬入及搬出基板托盤3，雖然使用上下機構41，但是即使使用實現相同功能之另外的機構亦可。在托盤保持器4之內部設置有用以冷卻托盤保持器4之無圖示之冷卻水路，而成為可以循環冷卻水。托盤保持器4係由熱傳導佳之Cu(銅)等之材料所構成，作為電極(陽極電極)而發揮功能。如圖2A、圖2C、圖2E所示般，在托盤保持器4設置用以對基板S和基板托盤3之間之間隙，及基板托盤3和托盤保持器4之間之間隙導入冷卻氣體之冷卻氣體導入路42。就以基板S和基板托盤3之間，基板托盤3和托盤保持器4之間之熱傳導媒體的冷卻氣體而言，使用例如Ar(氬)等之惰性氣體。再者，如圖1所示般，設置有環狀之夾緊環6，其具有於在托盤保持器4載置基板托盤3之時，可以抑制朝基板托盤3之周緣部、基板托盤3之背面以及托盤保持器4之表面成膜之配置或形狀。The tray holder 4 is vertically movable by the vertical mechanism 41, and is a distance between the target T and the substrate S (hereinafter referred to as a distance between T/S), or a substrate tray 3 in which the holding substrate S is carried in and out. At this time, the upper and lower mechanisms 41 can be moved up and down. Further, in the present embodiment, the vertical mechanism 41 is used for the distance between the T/S and the loading and unloading of the substrate tray 3. However, another mechanism that achieves the same function may be used. A cooling water passage (not shown) for cooling the tray holder 4 is provided inside the tray holder 4, so that the cooling water can be circulated. The tray holder 4 is made of a material such as Cu (copper) which is excellent in heat conduction, and functions as an electrode (anode electrode). As shown in FIGS. 2A, 2C, and 2E, the tray holder 4 is provided with a gap between the substrate S and the substrate tray 3, and a gap between the substrate tray 3 and the tray holder 4 to introduce a cooling gas. The cooling gas introduction path 42 is provided. For the cooling gas of the heat transfer medium between the substrate S and the substrate tray 3 and between the substrate tray 3 and the tray holder 4, an inert gas such as Ar (argon) or the like is used. Further, as shown in FIG. 1, an annular clamp ring 6 is provided which is provided to prevent the peripheral portion of the substrate tray 3 and the substrate tray 3 from being placed when the tray holder 4 is placed on the substrate tray 3. The back surface and the configuration or shape of the surface of the tray holder 4 are formed into a film.

並且，如圖2A、圖2C、圖2E所示般，基板托盤3之托盤本體31之端部(下部)31a經密封構件80(例如O型環)藉由托盤保持器4之端部(上端)4a被保持。於無O型環80之時，假設從托盤本體31和托盤保持器4之 接觸部分(圖2A、圖2C之81的部分)，從托盤本體31和基板S之接觸部分(圖2A、圖2C之82的部分)之間隙洩漏冷卻氣體。其結果，被形成在托盤本體31和托盤保持器4之間的空間中的冷卻氣體之壓力難以上升。並且，因冷卻氣體洩漏之路徑不被限定在基板托盤和基板間，故難以提升冷卻性能(溫度控制)。Further, as shown in FIGS. 2A, 2C, and 2E, the end portion (lower portion) 31a of the tray main body 31 of the substrate tray 3 is passed through the sealing member 80 (for example, an O-ring) by the end portion of the tray holder 4 (upper end) ) 4a is kept. At the time of the absence of the O-ring 80, it is assumed that the tray body 31 and the tray holder 4 are The contact portion (portion of 81 in Fig. 2A and Fig. 2C) leaks the cooling gas from the gap between the contact portion of the tray main body 31 and the substrate S (portion of 82 in Figs. 2A and 2C). As a result, the pressure of the cooling gas formed in the space between the tray main body 31 and the tray holder 4 is hard to rise. Further, since the path of the cooling gas leakage is not limited between the substrate tray and the substrate, it is difficult to improve the cooling performance (temperature control).

藉由設置O型環80，不會有冷卻氣體從托盤本體31和托盤保持器4之接觸部分(圖2A、圖2C之81的部分)洩漏之情形，冷卻氣體洩漏之路徑被限定在托盤本體31和基板S之接觸部分(圖2A、圖2C之82的部分)。其結果，於導入冷卻氣體之時，在托盤本體31和托盤保持器4之的空間的冷卻氣體之壓力容易上升，提升冷卻性能。By providing the O-ring 80, there is no leakage of cooling gas from the contact portion of the tray body 31 and the tray holder 4 (portion of 81 of FIGS. 2A and 2C), and the path of the cooling gas leakage is limited to the tray body. The contact portion of 31 and the substrate S (portion of 82 of Fig. 2A, Fig. 2C). As a result, when the cooling gas is introduced, the pressure of the cooling gas in the space between the tray main body 31 and the tray holder 4 is likely to rise, and the cooling performance is improved.

在圖2A、圖2C、圖2E中，表示在托盤保持器4之端部(上端)4a設置收容溝，在該收容溝內收容O型環之例，但是即使在基板托盤3之托盤本體31之端部(下部)31a和托盤保持器4之端部(上端)4a之間，設置鐵氟龍(註冊商標)等之密封構件亦可取得相同之效果。作為密封構件，若為可真空密封基板托盤3和托盤保持器4之間者即可，即使為O型環以外者亦可。圖2A、圖2C、圖2E係表示在托盤保持器4之端部(上端)4a設置收容溝，在該收容溝內收容O型環之例，但是即使在托盤本體31之端部(下端)31a設置收容溝，將O型環收容在該收容溝內亦可。2A, 2C, and 2E show an example in which an accommodation groove is provided at an end portion (upper end) 4a of the tray holder 4, and an O-ring is accommodated in the accommodation groove, but the tray body 31 of the substrate tray 3 is provided. The same effect can be obtained by providing a sealing member such as Teflon (registered trademark) between the end portion (lower portion) 31a and the end portion (upper end) 4a of the tray holder 4. The sealing member may be a vacuum seal between the substrate tray 3 and the tray holder 4, and may be an O-ring. 2A, 2C, and 2E show an example in which an accommodation groove is provided at an end portion (upper end) 4a of the tray holder 4, and an O-ring is accommodated in the accommodation groove, but the end portion (lower end) of the tray main body 31 is provided. 31a is provided with a receiving groove, and the O-ring may be housed in the receiving groove.

夾緊環6係被固定於夾緊環支撐棒61。在夾緊環支持棒61安裝有夾緊環上下驅動機構62，夾緊環6係藉由夾緊環上下驅動機構62，成為可以上下移動。The clamp ring 6 is fixed to the clamp ring support rod 61. A clamp ring up-and-down drive mechanism 62 is attached to the clamp ring support rod 61, and the clamp ring 6 is vertically movable by the clamp ring up-and-down drive mechanism 62.

在本實施形態中，藉由夾緊環6在基板托盤3之周邊部使托盤保持器4夾緊基板托盤3。依此，可以抑制冷卻氣體從基板托盤3和托盤保持器4之間洩漏，可以更提高基板S之冷卻性能。藉由夾緊環6之基板托盤3之夾緊係可以藉由例如以夾緊環6與基板托盤3接觸之方式使夾緊環上下機構62上下移動。如同圖2E之83所示般，夾緊環6以配置成夾緊與密封構件80相向之托盤本體31之周邊部為佳。如同圖2F之84所示般，於夾緊環6推壓密封構件80之外周之時，應考慮以密封構件80為支點變形成托盤本體31上側成為凸狀。當產生如此之變形時，有托盤保持器4和基板支撐板32之間的間隙d1變大，藉由冷卻氣體從基板S傳達至基板支撐板32，還有從基板支撐板32傳達至托盤保持器4之熱傳導效率下降，基板S之冷卻效率下降的可能性。In the present embodiment, the tray holder 4 is clamped to the substrate tray 3 by the clamp ring 6 at the peripheral portion of the substrate tray 3. According to this, leakage of the cooling gas from between the substrate tray 3 and the tray holder 4 can be suppressed, and the cooling performance of the substrate S can be further improved. The clamping ring upper and lower mechanism 62 can be moved up and down by, for example, the clamping ring 6 is in contact with the substrate tray 3 by the clamping mechanism of the substrate tray 3 of the clamping ring 6. As shown in 83 of FIG. 2E, the clamp ring 6 is preferably configured to clamp the peripheral portion of the tray body 31 facing the sealing member 80. As shown in FIG. 2F, 84, when the clamp ring 6 pushes the outer periphery of the seal member 80, it is considered that the upper side of the tray body 31 is formed into a convex shape by using the seal member 80 as a fulcrum. When such a deformation occurs, the gap d1 between the tray holder 4 and the substrate supporting plate 32 becomes large, and the cooling gas is transmitted from the substrate S to the substrate supporting plate 32, and also from the substrate supporting plate 32 to the tray holding. The heat transfer efficiency of the device 4 is lowered, and the cooling efficiency of the substrate S is lowered.

靶材保持器5係由金屬製構件所構成，作為電極(陰極電極)而發揮功能。靶材保持器5係藉由無圖示之絕緣體而被保持，自處理腔室21被電性絕緣。靶材保持器5經用以進行連接有阻抗匹配之匹配機(M.Box)51而連接有高頻電源52，成為能夠從高頻電源52對靶材保持器5施加高頻電力。並且，即使因應靶材T之種類等，將直流電源連接於靶材保持器5，將直流電力施加於靶材T 亦可。The target holder 5 is made of a metal member and functions as an electrode (cathode electrode). The target holder 5 is held by an insulator (not shown) and electrically insulated from the processing chamber 21. The target holder 5 is connected to the high-frequency power source 52 via a matching machine (M. Box) 51 to which impedance matching is connected, so that high-frequency power can be applied from the high-frequency power source 52 to the target holder 5. Further, even if the type of the target T or the like is used, the DC power source is connected to the target holder 5, and DC power is applied to the target T. Also.

在處理腔室21設置有導入製程氣體(例如氬等之惰性氣體和氧)之氣體導入手段6。氣體導入手段6包含例如濺鍍氣體(例如Ar)導入手段61和反應性氣體(例如氧)導入手段62。並且，在處理腔室21經氣體流導閥設置有排氣部7。排氣部7得以包含例如併用用以進行處理腔室21之排氣的TMP(渦輪分子泵)和低溫泵的第1排氣系統71，和由用以降低TMP之背壓的RP(旋轉泵)所構成之第2排氣系統72。並且，第1排氣系統71和第2排氣系統得以經第1閥73而連接。再者，在處理腔室21經第2閥75而連接有由RP(旋轉泵)所構成之第3排氣系統74。再者，在處理腔室21，連接有用以測定處理室內之壓力的壓力計8(例如，薄膜壓力計)。The processing chamber 21 is provided with a gas introduction means 6 for introducing a process gas (for example, an inert gas such as argon or oxygen). The gas introduction means 6 includes, for example, a sputtering gas (for example, Ar) introduction means 61 and a reactive gas (for example, oxygen) introduction means 62. Further, an exhaust portion 7 is provided in the processing chamber 21 via a gas flow guiding valve. The exhaust portion 7 can include, for example, a TMP (turbomolecular pump) for performing the exhaust of the processing chamber 21 and a first exhaust system 71 of the cryopump, and an RP (rotary pump) for reducing the back pressure of the TMP. The second exhaust system 72 is configured. Further, the first exhaust system 71 and the second exhaust system are connected via the first valve 73. Further, a third exhaust system 74 composed of an RP (rotary pump) is connected to the processing chamber 21 via the second valve 75. Further, in the processing chamber 21, a pressure gauge 8 (for example, a film pressure gauge) for measuring the pressure in the processing chamber is connected.

在靶材T和基板托盤3之間的空間，藉由於成膜動作中被施加於靶材保持器5之電力形成電漿。將藉由該靶材T、保持基板托盤3之托盤保持器4及處理腔室21之壁所包圍之空間稱為「製程空間」。即使在處理腔室21之壁設置無圖示之屏蔽亦可。在LL室1經由從RP(旋轉泵)等之大氣壓能夠排氣之泵12所構成之第4排氣系統經第3閥13而連接，持有無圖示之排氣機構。LL室1係為了將保持基板S之基板托盤3搬出搬入至SP室2而被使用。In the space between the target T and the substrate tray 3, plasma is formed by the electric power applied to the target holder 5 during the film forming operation. The space surrounded by the target T, the tray holder 4 holding the substrate tray 3, and the wall of the processing chamber 21 is referred to as a "process space." Even if a shield (not shown) is provided on the wall of the processing chamber 21, it may be provided. The fourth exhaust system including the pump 12 capable of exhausting from the atmospheric pressure such as RP (rotary pump) is connected to the LL chamber 1 via the third valve 13, and an exhaust mechanism (not shown) is provided. The LL chamber 1 is used to carry out the substrate tray 3 holding the substrate S and carry it into the SP chamber 2.

接著，說明基板托盤3之構成的說明。圖2A、圖2C、圖2E表示作為本發明之一個實施型態的基板 托盤3之構成的剖面圖。基板托盤3包含托盤本體31，和具備有支撐基板S之基板支撐部32b的基板支撐板32。基板支撐板32為磁性板。在托盤本體31形成有開口36。托盤本體31係在開口36之端部具備有保持基板S之周端部的基板保持部35。開口36具有：具有小於基板S之外徑的第1直徑的第1開口部36a，和從第1開口部36a延伸之環面36r，和藉由環面36r而與第1開口部36a連接，具有大於基板S之外徑的第2直徑的第2開口部36b。換言之，基板保持部35包含第1開口部36a、第2開口部36b及環面36r。基板S係由基板保持部35之環面36r和基板支撐板32之基板支撐部32b所夾持。基板S之位置係藉由具有大於基板S之外徑的第2直徑的第2開口部36b而被限制。依此，基板S確實被保持。即是，可以降低如超過基板相對第1開口部36a之中心軸容許之限度而被偏移保持，且於基板之處理時後述冷卻氣體洩漏，或部分性地過度隱藏基板周邊部而無法處理原本應被處理之基板周邊部般的危險性。再者，因藉由磁鐵被埋設於托盤本體31，可以使基板支撐板32薄化，故可以提升基板冷卻性能。基板S之應處理部分通過第1開口部36a而露出。Next, a description will be given of the configuration of the substrate tray 3. 2A, 2C, and 2E show a substrate as an embodiment of the present invention. A cross-sectional view of the structure of the tray 3. The substrate tray 3 includes a tray body 31 and a substrate supporting plate 32 provided with a substrate supporting portion 32b that supports the substrate S. The substrate support plate 32 is a magnetic plate. An opening 36 is formed in the tray body 31. The tray main body 31 is provided with a substrate holding portion 35 that holds a peripheral end portion of the substrate S at an end portion of the opening 36. The opening 36 has a first opening portion 36a having a first diameter smaller than the outer diameter of the substrate S, and a toroidal surface 36r extending from the first opening portion 36a, and being connected to the first opening portion 36a by the toroidal surface 36r. The second opening portion 36b having a second diameter larger than the outer diameter of the substrate S. In other words, the substrate holding portion 35 includes the first opening portion 36a, the second opening portion 36b, and the annular surface 36r. The substrate S is sandwiched by the ring surface 36r of the substrate holding portion 35 and the substrate supporting portion 32b of the substrate supporting plate 32. The position of the substrate S is restricted by the second opening portion 36b having a second diameter larger than the outer diameter of the substrate S. Accordingly, the substrate S is surely held. In other words, it is possible to reduce the tolerance of the substrate beyond the allowable limit of the central axis of the first opening 36a, and the cooling gas may be leaked later during the processing of the substrate, or the peripheral portion of the substrate may be partially hidden and the original cannot be processed. The danger of the peripheral part of the substrate to be treated. Furthermore, since the substrate support plate 32 can be thinned by the magnet being embedded in the tray main body 31, the substrate cooling performance can be improved. The portion to be processed of the substrate S is exposed through the first opening portion 36a.

基板支撐板32係由磁性材料所構成。就以構成基板支撐板32之磁性材料而言，以難以生鏽之不銹鋼等為佳，具體而言，以SUS430等為佳。因基板托盤3從大氣中被取出，故不僅磁性材料，以具有防鏽性為重要。The substrate support plate 32 is made of a magnetic material. The magnetic material constituting the substrate supporting plate 32 is preferably stainless steel or the like which is difficult to rust, and specifically, SUS430 or the like is preferable. Since the substrate tray 3 is taken out from the atmosphere, it is important not only for the magnetic material but also for the rust prevention property.

在托盤本體31，因在托盤本體31保持基板支撐板32，故在較基板保持部35外側配設有磁鐵33。在圖2A、圖2C、圖2E之例中，於托盤本體31之內部埋入複數單面2極之磁鐵33。設為單面2極之磁鐵係因為比起單面1極之磁鐵，用以將基板支撐板32保持在托盤本體31之吸附力強，可以抑制磁場洩漏至製程空間。針對該點，使用圖3A、3B予以說明。圖3A係於在托盤本體31埋設2組單面2極之磁鐵33之構成例，圖3B係在托盤本體31埋設2組單面1極磁鐵33之構成例。如圖3A所示般，於單面2極磁鐵33之時，在製程空間產生之洩漏磁場，比單面1極磁鐵33之時小。因此，可以使抑制磁場朝後述製程空間洩漏之軛鐵34之厚度變薄，具有可以謀求基板托盤3之輕量化的技術意義。In the tray main body 31, since the substrate support plate 32 is held by the tray main body 31, the magnet 33 is disposed outside the substrate holding portion 35. In the example of FIGS. 2A, 2C, and 2E, a plurality of single-sided two-pole magnets 33 are embedded in the tray body 31. The magnet having one side and two poles has a strong adsorption force for holding the substrate supporting plate 32 on the tray main body 31 compared to the one-sided one-pole magnet, and it is possible to suppress the magnetic field from leaking into the process space. This point will be described using FIGS. 3A and 3B. 3A is a configuration example in which two sets of single-pole two-pole magnets 33 are embedded in the tray main body 31, and FIG. 3B is a configuration example in which two sets of single-sided one-pole magnets 33 are embedded in the tray main body 31. As shown in FIG. 3A, when the single-sided two-pole magnet 33 is used, the leakage magnetic field generated in the process space is smaller than that of the single-sided one-pole magnet 33. Therefore, the thickness of the yoke 34 that suppresses the leakage of the magnetic field to the process space described later can be made thin, and the technical significance of reducing the weight of the substrate tray 3 can be achieved.

於圖3A之構成例中，在N極和S極相鄰之位置配置。從N極產生之磁力線33a拉到隔壁之S極而使封閉。此時，因為N極和S極之配置為接近，故托盤表面之洩漏磁通密度小。另外，於圖3B之構成例中，比起圖3A之構成例，N極和S極分離。此時，從N極產生之磁力線33b與圖3A之構成例相同，被拉到S極而使封閉，但是因位置分離，故比起圖3A之構成例，產生在托盤表面之洩漏磁通密度容易變大。如圖3A之構成例所示般，當產生在托盤表面之洩漏磁通密度小時，在托盤表面不殘留下異常的放電痕。In the configuration example of FIG. 3A, the N pole and the S pole are disposed adjacent to each other. The magnetic field line 33a generated from the N pole is pulled to the S pole of the partition wall to be closed. At this time, since the arrangement of the N pole and the S pole is close, the leakage magnetic flux density on the surface of the tray is small. Further, in the configuration example of Fig. 3B, the N pole and the S pole are separated from each other as compared with the configuration example of Fig. 3A. At this time, the magnetic flux 33b generated from the N pole is the same as the configuration example of Fig. 3A, and is pulled to the S pole to be closed, but due to the positional separation, the leakage magnetic flux density at the surface of the tray is generated as compared with the configuration example of Fig. 3A. It is easy to get bigger. As shown in the configuration example of Fig. 3A, when the leakage magnetic flux density generated on the surface of the tray is small, no abnormal discharge marks remain on the surface of the tray.

接著，參照圖4，說明使用軛鐵34之實施型 態。在圖4之構成例中，在磁鐵33之製程空間側設置有軛鐵34，抑制磁場朝製程空間洩漏。軛鐵34之材質為了抑制磁場朝製程空間洩漏，若為透磁率高之材料時即可，適合使用例如SUS430等。就以托盤本體31內中之磁鐵33和軛鐵34之固定方法而言，雖然使用例如接著劑(具體而言，環氧系接著劑)等之接著，但是若為在基板托盤3之使用條件下被容許之固定方法，即使為其他方法(例如螺絲固定)亦可。磁鐵33之兩個面中無軛鐵34之面與基板支撐板32接觸，成為可以與托盤本體31拆裝之構成。並且，磁鐵33之兩個面中無軛鐵34之面不一定要與基板支撐板32接觸，若可以藉由基板支撐板32和磁鐵33之吸附力，在托盤本體31和基板支撐板32保持基板S即可。Next, an embodiment using the yoke 34 will be described with reference to FIG. state. In the configuration example of Fig. 4, a yoke 34 is provided on the process space side of the magnet 33 to suppress leakage of magnetic fields into the process space. The material of the yoke 34 may be a material having a high magnetic permeability in order to suppress leakage of the magnetic field into the process space, and for example, SUS430 or the like is preferably used. In the method of fixing the magnet 33 and the yoke 34 in the tray main body 31, for example, an adhesive (specifically, an epoxy-based adhesive) or the like is used, but the use condition of the substrate tray 3 is used. The fixed method allowed underneath, even for other methods (such as screw fixing). The surface of the yoke-free iron 34 on both surfaces of the magnet 33 is in contact with the substrate supporting plate 32, and is configured to be detachable from the tray main body 31. Further, the faces of the yokeless iron 34 in the two faces of the magnet 33 do not have to be in contact with the substrate supporting plate 32, and can be held in the tray body 31 and the substrate supporting plate 32 by the adsorption force of the substrate supporting plate 32 and the magnet 33. The substrate S can be used.

在基板支撐板32具有複數從基板支撐板32之托盤保持器4側貫通至基板S側之貫通孔32a，冷卻氣體經該貫通孔32a被導入至基板支撐板32和基板S之間，可以提升基板S和基板支撐板32之間的熱傳導率。冷卻氣體係通過在保持基板托盤3之托盤保持器4之基板保持面43上開口之冷卻氣體導入路42，而被導入至托盤保持器4和基板支撐板32之間的間隙d1。因藉由該冷卻氣體從基板S朝基板支撐板32，又從基板支撐板32朝托盤保持器4之熱傳導效率變佳，故基板S之冷卻效率上升。The substrate supporting plate 32 has a plurality of through holes 32a penetrating from the tray holder 4 side of the substrate supporting plate 32 to the substrate S side, and the cooling gas is introduced into the substrate supporting plate 32 and the substrate S through the through holes 32a, which can be lifted. Thermal conductivity between the substrate S and the substrate support plate 32. The cooling gas system is introduced into the gap d1 between the tray holder 4 and the substrate supporting plate 32 by the cooling gas introduction path 42 that is opened on the substrate holding surface 43 of the tray holder 4 holding the substrate tray 3. Since the heat transfer efficiency of the cooling gas from the substrate S to the substrate supporting plate 32 and from the substrate supporting plate 32 toward the tray holder 4 is improved, the cooling efficiency of the substrate S is increased.

雖然托盤本體31即使以非磁性材料形成亦 可，但是以磁性材料構成托盤本體31，亦可以抑制磁場朝製程空間洩漏。但是，當以磁性材料構成托盤本體31時，因重量增加，故對用以搬運基板托盤3之機械臂等之托盤搬運裝置增加負擔。再者，亦可以非磁性材料形成托盤本體31全體，省略軛鐵34。為了省略軛鐵34，並且抑制磁場朝製程空間洩漏，若增厚托盤本體31即可。但是，於增厚托盤本體31之時，基板托盤3之重量增加。因此，為了一面抑制磁場朝製程空間洩漏，一面謀求基板托盤3之輕量化，以非磁性材料構成托盤本體31，在磁鐵33和非磁鐵材料之托盤本體31之間配置軛鐵34之圖4般的構成為佳。就以托盤本體3使用之非磁性材料而言，以輕量材料為佳，可以使用Ti(鈦)、碳、氧化鋁、陶磁、Mg合金、Al、Al合金等。其中，因又以Ti(鈦)、碳、氧化鋁耐熱性為優，故於大電力之濺鍍成膜裝置等朝托盤之熱量流入高之時，尤其為佳。Although the tray body 31 is formed of a non-magnetic material, However, the tray body 31 is made of a magnetic material, and the magnetic field can be suppressed from leaking toward the process space. However, when the tray main body 31 is made of a magnetic material, the weight is increased, so that a burden is placed on the pallet conveying device for transporting the robot arm or the like of the substrate pallet 3. Further, the entire tray main body 31 may be formed of a non-magnetic material, and the yoke 34 may be omitted. In order to omit the yoke 34 and suppress the magnetic field from leaking into the process space, the tray body 31 may be thickened. However, when the tray body 31 is thickened, the weight of the substrate tray 3 is increased. Therefore, in order to suppress the leakage of the magnetic field into the process space, the substrate tray 3 is made lighter, the tray main body 31 is made of a non-magnetic material, and the yoke 34 is disposed between the magnet 33 and the tray main body 31 of the non-magnetic material. The composition is better. As the non-magnetic material used for the tray body 3, a lightweight material is preferable, and Ti (titanium), carbon, alumina, ceramic, Mg alloy, Al, Al alloy or the like can be used. Among them, since Ti (titanium), carbon, and aluminum oxide are excellent in heat resistance, it is particularly preferable when the heat of the tray is high in the sputtering apparatus such as a large power.

圖5表示磁鐵33之配置例。在基板S之周圍每次排列3個單面2極之磁鐵33，該係大概以對基板S旋轉對稱地配置3組。磁鐵33為厚度薄的圓柱狀，在圓形面具有N極和S極。磁鐵33之N極和S極之境界線大約被配置成朝向基板S之中心。如此一來，因可以平衡佳地保持基板S，故為最佳。並且，用以平衡佳地保持基板S之複數之磁鐵33之配置，並不限定於此，即使例如將一個單面2極磁鐵33以旋轉對稱地配置在三處，即是以三個磁鐵33構成此亦可，即使將一個單面2極磁鐵旋轉 對稱地配置在兩處，即是以兩個磁鐵構成此亦可。並且，若為了平衡佳地保持基板S旋轉對稱地配置，即使磁鐵33之N極和S極之境界線被配置成大約朝向基板S之中心亦可。再者，磁鐵不僅圓形，亦可以使用棒狀、圓弧狀等者。FIG. 5 shows an example of the arrangement of the magnets 33. Three single-sided two-pole magnets 33 are arranged around the substrate S, and three sets of the magnets 33 are arranged in a rotationally symmetric manner with respect to the substrate S. The magnet 33 has a cylindrical shape with a small thickness and has an N pole and an S pole on a circular surface. The boundary between the N pole and the S pole of the magnet 33 is disposed approximately toward the center of the substrate S. In this way, it is preferable because the substrate S can be held in a well-balanced manner. Further, the arrangement of the magnets 33 for balancing the plurality of substrates S is preferably not limited thereto. For example, even if one single-sided two-pole magnet 33 is arranged in three rotational symmetry, three magnets 33 are provided. This is also possible, even if a single-sided 2-pole magnet is rotated It is symmetrically arranged in two places, that is, it is composed of two magnets. Further, in order to keep the substrate S rotationally symmetrically arranged in a balanced manner, even if the boundary between the N pole and the S pole of the magnet 33 is disposed approximately toward the center of the substrate S. Further, the magnet is not only circular, but also a rod shape, an arc shape, or the like.

再者，藉由將N極和S極之雙方之磁極朝向基板支撐板32，對基板支撐板32之吸附力變高，基板保持性能優良。再者，藉由為單面2極磁鐵33，可以一面維持基板保持性能一面降低磁場朝基板托盤3表面洩漏。Further, by bringing the magnetic poles of both the N pole and the S pole toward the substrate supporting plate 32, the adsorption force to the substrate supporting plate 32 is increased, and the substrate holding performance is excellent. Further, by using the single-sided two-pole magnet 33, it is possible to reduce the leakage of the magnetic field toward the surface of the substrate tray 3 while maintaining the substrate holding performance.

例如，如圖5所示般，於使用複數之磁鐵33而保持基板S之構成之時，以配置成N極和S極交互般為佳。藉由設為複數之磁鐵33，保持性能變高。並且，若配置成N極和S極成為交互，則可以更提高該性能。For example, as shown in FIG. 5, when a plurality of magnets 33 are used to hold the substrate S, it is preferable to arrange the N-pole and the S-pole to interact. By maintaining the plurality of magnets 33, the holding performance becomes high. Further, if the N pole and the S pole are arranged to interact, the performance can be further improved.

但是，藉由具有軛鐵34，降低基板托盤3之表面中之洩漏磁通密度，但是從提升成膜特性之點來看較理想為降低至該洩漏磁場強度對成膜不引起具有影響的異常放電的程度為佳。However, by having the yoke 34, the leakage magnetic flux density in the surface of the substrate tray 3 is lowered, but from the viewpoint of improving the film formation property, it is preferable to reduce the abnormality to the filming magnetic field which does not affect the film formation. The degree of discharge is good.

圖6係表示軛鐵34之厚度和托盤本體31之表面之洩漏磁通密度之關係。在本實施型態中，軛鐵厚度和托盤本體31之表面之洩漏磁通密度之關係成為曲線201般，例如於軛鐵厚度為0.3mm之時，洩漏磁通密度為130Gauss，於軛鐵厚度為0.6mm之時，洩漏磁通密度為30Gauss。在洩漏磁通密度超過100Gauss之區域中，在托盤表面殘留放電痕。但是在洩漏磁通密度為100Gauss以 下之區域不殘留放電痕。在一例中，在軛鐵厚度為0.3mm且洩漏磁通密度為130Gauss之時，在托盤表面產生放電痕，但是於軛鐵厚度為0.6mm且洩漏磁通密度為30Gauss之時，托盤表面看不見放電痕。Fig. 6 shows the relationship between the thickness of the yoke 34 and the leakage magnetic flux density of the surface of the tray body 31. In the present embodiment, the relationship between the thickness of the yoke and the leakage magnetic flux density of the surface of the tray body 31 is as shown by the curve 201. For example, when the thickness of the yoke is 0.3 mm, the leakage magnetic flux density is 130 Gauss, and the thickness of the yoke is At 0.6 mm, the leakage flux density is 30 Gauss. In the region where the leakage magnetic flux density exceeds 100 Gauss, a discharge mark remains on the surface of the tray. But at a leakage flux density of 100 Gauss No discharge marks remain in the area below. In one example, when the yoke thickness is 0.3 mm and the leakage magnetic flux density is 130 Gauss, a discharge mark is generated on the surface of the tray, but when the thickness of the yoke is 0.6 mm and the leakage magnetic flux density is 30 Gauss, the surface of the tray is invisible. Discharge marks.

圖9A、9B係使用本實施型態之基板托盤3而保持8片之基板S之情形。圖9A係將當作基板壓環而發揮功能之上述基板支撐板32一體成形成可以保持8片之基板S。圖9B係在8片之每個基板S上形成當作基板壓環而發揮功能之上述基板支撐板32。洩漏磁通密度之測定係如圖10B所示般，在磁鐵33之正上方，磁鐵33和磁鐵33之間進行。軛鐵34之厚度越厚越降低洩漏磁場。為了成膜，不在托盤表面產生不理想之放電，以洩漏磁場為100高斯以下之區域為佳。並且，托盤本體31之表面中之洩漏磁通密度，係在托盤表面藉由測定垂直磁通密度大約成為0高斯之地點中之水平磁通密度而評估。9A and 9B show a case where eight substrates S are held by using the substrate tray 3 of the present embodiment. Fig. 9A is a view in which the substrate supporting plate 32 functioning as a substrate pressing ring is integrally formed into a substrate S capable of holding eight sheets. Fig. 9B shows the substrate supporting plate 32 which functions as a substrate pressing ring on each of the eight substrates S. The measurement of the leakage magnetic flux density is performed between the magnet 33 and the magnet 33 directly above the magnet 33 as shown in Fig. 10B. The thicker the yoke 34 is, the lower the leakage magnetic field is. In order to form a film, an undesired discharge is not generated on the surface of the tray, and it is preferable that the leakage magnetic field is 100 gauss or less. Further, the leakage magnetic flux density in the surface of the tray body 31 is evaluated on the surface of the tray by measuring the horizontal magnetic flux density in a position where the perpendicular magnetic flux density becomes approximately 0 gauss.

更詳細而言，於單面2極磁鐵33埋設一組在托盤本體31之時，藉由以高斯計測定從托盤上面觀看之時之磁鐵33之N極和S極之間的垂直磁通密度大約為0高斯之地點的托盤表面中之水平磁通密度，進行評估。就以高斯計而言，使用東陽特克尼卡公司製5180型高斯計。磁通密度之測定係依據在室溫藉由基板支撐板32保持藍寶石基板S之狀態下進行。再者，如圖10A、圖10B所示般，在托盤本體31以每次3組，120度之等間隔埋設單面2極磁鐵33之時，藉由高斯計測定從托盤上面觀 看之時之一個單面2極磁鐵33之N極和S極之間中之垂直磁通密度大約成為0高斯之地點，3組之單面2極磁鐵33之各個之磁鐵之間中之垂直磁通密度大約成為0高斯之地點的托盤表面中之水平磁通密度，進行評估。More specifically, when a single-sided 2-pole magnet 33 is embedded in the tray body 31, the perpendicular magnetic flux density between the N-pole and the S-pole of the magnet 33 when viewed from the top of the tray is measured by a Gauss meter. The horizontal flux density in the surface of the tray at approximately 0 gauss is evaluated. In the case of Gauss meter, a 5180 type Gauss meter manufactured by Dongyang Tecnik Corporation was used. The measurement of the magnetic flux density is performed in a state where the sapphire substrate S is held by the substrate supporting plate 32 at room temperature. Further, as shown in FIG. 10A and FIG. 10B, when the single-sided two-pole magnet 33 is embedded in the tray main body 31 at intervals of three groups of 120 degrees, the top view of the tray is measured by a Gauss meter. When viewed, the vertical magnetic flux density between the N pole and the S pole of a single-sided 2-pole magnet 33 is approximately 0 gauss, and the vertical between the magnets of the single-sided 2-pole magnet 33 of the three groups The magnetic flux density in the surface of the tray where the magnetic flux density is approximately 0 gauss is evaluated.

圖7係表示基板溫度和基板托盤3之背面(即是基板托盤3之基板支撐板32之背面)和托盤保持器4之間之間隙尺寸d1之關係。因防止在基板S上之某保護樹脂由於溫度而形狀變化，故以基板溫度為100℃以下為佳。藉由實驗結果，在間隙尺寸d1為0.15mm中，基板溫度大約為90℃。當間隙尺寸d1變寬成0.7mm時，基板溫度上升至大約150℃。以後，隨著間隙尺寸d1變寬，基板溫度上升，於2.5mm之時上升至大約190℃。從該實驗結果，可知如圖7所示般，基板溫度成為100℃以下之間隙尺寸d1為0.3mm以下。因此，為了提高冷卻效果，基板支撐板32和托盤保持器4之間的間隙d1越小越佳。在此，為了將基板溫度設成100℃以下，基板支撐板32和托盤保持器4之間的距離d1以0.3mm以下為佳。針對該點，使用圖2C予以說明。冷卻氣體(Ar)係經冷卻氣體導入孔42、貫通孔32a而被導入至基板S之背面側。再者，為了防止冷卻氣體(Ar)從托盤本體31擴散至SP室2內之製程空間，托盤本體31之端部(下端)31a和托盤保持器4之端部(上端)4a被固定成取得高的氣密性為佳。另外，托盤本體31之中央部31b和托盤保持器4之中央部4b若為可以將冷卻氣體(Ar)導入至基板S之背面側之程度 的間隙即可。從以上之點來看，基板支撐板32和托盤保持器4之間的間隙d1以0.3mm以下為佳。7 is a view showing the relationship between the substrate temperature and the gap size d1 between the back surface of the substrate tray 3 (that is, the back surface of the substrate support plate 32 of the substrate tray 3) and the tray holder 4. Since the shape of the protective resin on the substrate S is changed due to the temperature, the substrate temperature is preferably 100 ° C or lower. As a result of the experiment, in the gap size d1 of 0.15 mm, the substrate temperature was approximately 90 °C. When the gap size d1 is widened to 0.7 mm, the substrate temperature rises to about 150 °C. Thereafter, as the gap size d1 becomes wider, the substrate temperature rises and rises to about 190 ° C at 2.5 mm. From the results of the experiment, it is understood that the gap size d1 at which the substrate temperature is 100 ° C or lower is 0.3 mm or less as shown in FIG. 7 . Therefore, in order to improve the cooling effect, the smaller the gap d1 between the substrate supporting plate 32 and the tray holder 4, the better. Here, in order to set the substrate temperature to 100 ° C or lower, the distance d1 between the substrate supporting plate 32 and the tray holder 4 is preferably 0.3 mm or less. This point is explained using FIG. 2C. The cooling gas (Ar) is introduced into the back surface side of the substrate S through the cooling gas introduction hole 42 and the through hole 32a. Further, in order to prevent the cooling gas (Ar) from diffusing from the tray main body 31 into the process space in the SP chamber 2, the end portion (lower end) 31a of the tray main body 31 and the end portion (upper end) 4a of the tray holder 4 are fixed to be obtained. High air tightness is preferred. Further, the central portion 31b of the tray main body 31 and the central portion 4b of the tray holder 4 are such that the cooling gas (Ar) can be introduced to the back side of the substrate S. The gap can be. From the above point of view, the gap d1 between the substrate supporting plate 32 and the tray holder 4 is preferably 0.3 mm or less.

因冷卻基板之性能提升，故間隙d1越小越佳。但是，當基板支撐板32較托盤本體31之端部31a突出時，因冷卻氣體擴散至SP室2內之製程空間，故若決定d1之最小值，使成為在將基板支撐板32安裝在托盤本體31之狀態下考慮到設成無較端部31a突出之部分所需之設計公差的尺寸即可。再者，在本實施型態中，雖然使用Ar(氬)當作冷卻氣體，但是即使使用He(氦)或氫等之其他冷卻氣體亦可。Since the performance of the cooling substrate is improved, the smaller the gap d1 is, the better. However, when the substrate supporting plate 32 protrudes from the end portion 31a of the tray main body 31, since the cooling gas is diffused into the processing space in the SP chamber 2, if the minimum value of d1 is determined, the substrate supporting plate 32 is mounted on the tray. In the state of the body 31, the size of the design tolerance required for the portion where the end portion 31a is not protruded may be considered. Further, in the present embodiment, Ar (argon) is used as the cooling gas, but other cooling gases such as He (hydrogen) or hydrogen may be used.

接著，針對對基板托盤3安裝基板S及基板支撐板32之方法，使用圖8A、圖8B予以說明。相對於基板托盤3之基板S及基板支撐板32之設置，可以機械臂自動性地進行。首先，當裝填複數片基板S之卡匣102盛放在卡匣用裝載埠103b時，卡匣102藉由輸送帶104被搬運至基板取出位置105。當卡匣102被配置在基板取出位置105時，基板升降機構106從下方上升，所有之基板S升起。之後，藉由具備有無圖示之真空吸盤機構的6軸機械臂107，基板S之背面藉由真空吸盤被吸附保持。之後，進行偵測基板S之中心、定向之位置。Next, a method of attaching the substrate S and the substrate supporting plate 32 to the substrate tray 3 will be described with reference to FIGS. 8A and 8B. The mounting of the substrate S and the substrate supporting plate 32 with respect to the substrate tray 3 can be automatically performed by a robot arm. First, when the cassette 102 loaded with the plurality of substrates S is placed on the cassette loading cassette 103b, the cassette 102 is transported to the substrate take-out position 105 by the transport belt 104. When the cassette 102 is placed at the substrate take-out position 105, the substrate elevating mechanism 106 rises from below, and all of the substrates S rise. Thereafter, the back surface of the substrate S is suction-held by a vacuum chuck by a 6-axis robot 107 having a vacuum chuck mechanism (not shown). Thereafter, the position of the center and the orientation of the substrate S is detected.

與基板搬運動作並行，被填裝於托盤用機械臂108a、108b之基板托盤3，藉由具備無圖示之真空吸盤機構的6軸機械臂110被吸附保持，被搬運至用以進行基板S和基板支撐板32之設置的工作台111。此時也進 行偵測基板托盤3之中心、位置。In parallel with the substrate transfer operation, the substrate tray 3 loaded in the tray robots 108a and 108b is sucked and held by a 6-axis robot 110 having a vacuum chuck mechanism (not shown), and is transported to perform the substrate S. And a table 111 provided with the substrate support plate 32. Also progressing at this time The center and position of the substrate tray 3 are detected.

藉由6軸機械臂107而被保持之基板S係對被載置於工作台111之基板托盤3配置成成膜之面成為下方。當在基板托盤3設置基板S時，用以保持基板S之基板支撐板32藉由機械臂113被保持，相對於既已設置有基板S之基板托盤3被設置。當完成對基板托盤3設置基板S及基板支撐板32時，藉由6軸機械臂110，吸附保持基板托盤3之背面，使基板托盤3翻面而成為成膜面朝為上方，搬運至成膜處理裝置之裝載埠114。The substrate S held by the six-axis robot arm 107 is placed below the surface on which the substrate tray 3 placed on the table 111 is placed to be formed. When the substrate S is placed on the substrate tray 3, the substrate supporting plate 32 for holding the substrate S is held by the robot arm 113, and is disposed with respect to the substrate tray 3 on which the substrate S is already provided. When the substrate S and the substrate support plate 32 are provided on the substrate tray 3, the back surface of the substrate tray 3 is sucked and held by the 6-axis robot arm 110, and the substrate tray 3 is turned over to form a film formation surface upward, and transported to the front. The membrane processing device is loaded with a crucible 114.

完成成膜處理之基板托盤3係以與上述相反之程序進行基板支撐板32和基板S之拆除，當最終基板S被裝填至基板卡匣102之時，藉由輸送帶104被搬運至卡匣用卸載埠103a，並可以回收。The substrate tray 3 which has been subjected to the film forming process is subjected to removal of the substrate supporting plate 32 and the substrate S by a procedure reverse to the above, and when the final substrate S is loaded to the substrate cassette 102, it is carried to the cassette by the conveying belt 104. Unload 埠103a and recycle it.

安裝基板S之基板托盤3被搬運至LL室內1。LL室內1被排氣至低真空區域。於排氣完成後，基板托盤3從LL室1被搬運至SP室2，藉由夾緊環6和托盤保持器4被固定。SP室2被排氣至高真空區域，之後進行SP(濺鍍)處理。SP處理係將製程氣體例如Ar和O2 之混合氣體導入至SP室2而將SP室2設成規定之壓力後，對靶材保持器5輸入電力，進行至經過規定時間為止。此時，冷卻氣體通過托盤保持器4內之冷卻氣體導入路42而被導入至基板托盤3之背面和托盤保持器4之間之間隙d1(基板托盤3之基板支撐板32之兩個面之中，與基板保持面相反側之面和托盤保持器4之間的間隙)。冷卻氣體 又從該間隙d1通過被設置在基板托盤3之基板支撐板32的貫通孔32a而被導入至基板S和基板支撐板32之間的空間。藉由導入之冷卻氣體一面冷卻基板S一面進行成膜。於成膜結束之後，電力、添加氣體、冷卻氣體之供給被停止，基板托盤3從SP室2被搬運至LL室1，而在LL室1內進行排氣，基板托盤3被取出。The substrate tray 3 on which the substrate S is mounted is transported to the LL chamber 1. The LL chamber 1 is vented to a low vacuum region. After the exhaust is completed, the substrate tray 3 is transported from the LL chamber 1 to the SP chamber 2, and is fixed by the clamp ring 6 and the tray holder 4. The SP chamber 2 is evacuated to a high vacuum region, followed by SP (sputtering) treatment. In the SP process, a process gas such as a mixed gas of Ar and O 2 is introduced into the SP chamber 2, and the SP chamber 2 is set to a predetermined pressure, and then electric power is input to the target holder 5 until a predetermined time elapses. At this time, the cooling gas is introduced into the gap d1 between the back surface of the substrate tray 3 and the tray holder 4 through the cooling gas introduction path 42 in the tray holder 4 (the both sides of the substrate support plate 32 of the substrate tray 3) The gap between the surface on the opposite side to the substrate holding surface and the tray holder 4). The cooling gas is introduced into the space between the substrate S and the substrate supporting plate 32 from the gap d1 through the through hole 32a provided in the substrate supporting plate 32 of the substrate tray 3. Film formation is performed while cooling the substrate S by the introduced cooling gas. After the film formation is completed, the supply of the electric power, the additive gas, and the cooling gas is stopped, and the substrate tray 3 is transported from the SP chamber 2 to the LL chamber 1, and exhausted in the LL chamber 1, and the substrate tray 3 is taken out.

保持基板S之基板托盤3係從LL室1被取出，之後在大氣中基板S從基板托盤3被取下。在本實施型態中，因藉由作用於托盤本體31之磁鐵33和基板支撐板32之間的磁力保持基板，故容易拆卸基板S，也容易進行自動化，因此可以設定便宜之拆卸裝置。再者，提高生產量。因此，在量產裝置中為合適。圖11係表示成膜裝置中之基板托盤之表面側的狀態。在圖11所示之基板托盤中，為了縮小洩漏磁通密度，將磁鐵33和軛鐵34之厚度予以最佳化之結果，無確認到放電痕。The substrate tray 3 holding the substrate S is taken out from the LL chamber 1, and then the substrate S is removed from the substrate tray 3 in the atmosphere. In the present embodiment, since the substrate is held by the magnetic force acting between the magnet 33 of the tray main body 31 and the substrate supporting plate 32, the substrate S can be easily detached and automation can be easily performed, so that an inexpensive detaching device can be set. Furthermore, increase production. Therefore, it is suitable in a mass production apparatus. Fig. 11 is a view showing a state of the surface side of the substrate tray in the film forming apparatus. In the substrate tray shown in Fig. 11, in order to reduce the leakage magnetic flux density, the thickness of the magnet 33 and the yoke 34 was optimized, and no discharge marks were observed.

如上述說明般，在本發明中，有藉由磁力使托盤本體保持基板支撐板，並以基板保持部和基板支撐部保持基板，藉此抑制微粒產生或構造物對基板處理之影響，且藉由熱傳導媒體所致之冷卻性能(溫度控制)優良，並且可以容易對應量產裝置進行基板之拆裝的效果。並且，因基板托盤經密封構件而被保持於托盤保持器，故不會有基板托盤和托盤保持器之間的冷卻氣體洩漏，冷卻氣體洩漏路徑被限定在基板托盤和基板之間，故有冷卻性能(溫度控制)優良之效果。藉由夾緊托盤本體之周邊部之夾 緊環之推壓，托盤本體之下面和托盤保持器之托盤本體支撐面依據密封構件被密封，故不會有基板托盤和托盤保持器之間的冷卻氣體洩漏，冷卻氣體洩漏路徑被限定於基板托盤和基板間，故有冷卻性能(溫度控制)優良之效果。因夾緊環配置成夾緊與密封構件相向之托盤本體之周邊部，故以密封構件為支點，基板托盤變形成上側成為凸狀，並且因托盤本體和托盤保持器之間的距離不會變大，故有冷卻性能(溫度控制)優良之效果。藉由在托盤保持器及或基板支撐板各設置用以將冷卻氣體導入至與基板之處理面相反側之面的氣體導入孔，具有可以有效率地冷卻基板之效果。As described above, in the present invention, the tray body is held by the magnetic force to hold the substrate supporting plate, and the substrate is held by the substrate holding portion and the substrate supporting portion, thereby suppressing the generation of particles or the influence of the structure on the substrate processing, and borrowing The cooling performance (temperature control) by the heat transfer medium is excellent, and the effect of disassembly and assembly of the substrate can be easily performed corresponding to the mass production apparatus. Further, since the substrate tray is held by the tray holder via the sealing member, there is no leakage of the cooling gas between the substrate tray and the tray holder, and the cooling gas leakage path is limited between the substrate tray and the substrate, so that there is cooling Excellent performance (temperature control). By clamping the periphery of the tray body The pressing of the tight ring, the lower surface of the tray body and the tray body supporting surface of the tray holder are sealed according to the sealing member, so that there is no leakage of cooling gas between the substrate tray and the tray holder, and the cooling gas leakage path is limited to the substrate. There is an excellent cooling performance (temperature control) between the tray and the substrate. Since the clamp ring is disposed to clamp the peripheral portion of the tray body facing the sealing member, the sealing member is used as a fulcrum, the upper side of the substrate tray is formed into a convex shape, and the distance between the tray body and the tray holder does not change. Large, so there is an excellent cooling performance (temperature control). By providing a gas introduction hole for introducing a cooling gas to the surface opposite to the processing surface of the substrate on each of the tray holder and the substrate supporting plate, there is an effect that the substrate can be efficiently cooled.

並且，藉由形成具有擁有小於基板之外徑之第1直徑的第1開口部，和與第1開口部連接且具有大於上述基板之外徑之第2直徑的第2開口部的基板保持部，可以藉由基板保持部和基板支撐板確實地夾持基板的效果。Further, a substrate holding portion having a first opening having a first diameter smaller than the outer diameter of the substrate and a second opening having a second diameter larger than the outer diameter of the substrate is formed. The effect of reliably holding the substrate by the substrate holding portion and the substrate supporting plate can be achieved.

因藉由在托盤本體埋設磁鐵還有軛鐵，可以使基板支撐板32變薄，故有可以謀求提升基板冷卻性能的效果。Since the substrate supporting plate 32 can be thinned by embedding the magnet and the yoke in the tray body, it is possible to improve the cooling performance of the substrate.

藉由在托盤本體之至少一部分埋設非磁性材料板，並在非磁性材料板和磁鐵之間設置軛鐵，具有可以抑制於磁力線從軛鐵漏出之時磁力線作用至電漿處理空間的效果。By embedding a non-magnetic material plate in at least a portion of the tray body and providing a yoke between the non-magnetic material plate and the magnet, it is possible to suppress the magnetic field lines from acting on the plasma processing space when the magnetic lines of force leak from the yoke.

藉由以非磁性材料形成托盤本體，具有可以 抑制於磁力線從軛鐵漏出之時磁力線作用至電漿處理空間之效果。By forming the tray body with a non-magnetic material, it is possible to The effect of the magnetic lines of force acting on the plasma processing space when the magnetic lines of force leak from the yoke is suppressed.

因藉由以Ti(鈦)、碳或氧化鋁形成托盤本體，可以減輕基板托盤，故可以減少搬運機械臂等之搬運系統之負擔。並且，再者，藉由以Ti(鈦)、碳、氧化鋁形成托盤本體，因可以使基板托盤成為耐熱性優良者，故有尤其適合從電漿朝基板托盤的熱量流入大的大電力之濺鍍成膜的效果。Since the tray body can be formed by forming the tray body with Ti (titanium), carbon or alumina, the burden on the conveyance system such as the transfer robot can be reduced. Further, by forming the tray body with Ti (titanium), carbon, or aluminum oxide, the substrate tray can be made excellent in heat resistance, and therefore it is particularly suitable for inflowing large amounts of electric power from the plasma to the substrate tray. The effect of sputtering film formation.

藉由設為在基板支撐板之側出現N極和S極之磁極，在與基板支撐板相反側出現S極和N極之磁極之單面2極磁鐵，因可以使N極和S極之雙方之磁極朝向基板支撐板側，故對於基板支撐板之吸附力變高，有謀求提升基板保持性能之效果。並且，藉由設為單面2極磁鐵，具有可以維持基板保持性能一面降低磁場漏出至托盤表面的效果。By forming the magnetic poles of the N pole and the S pole on the side of the substrate supporting plate, a single-sided two-pole magnet of the magnetic poles of the S pole and the N pole appears on the opposite side of the substrate supporting plate, so that the N pole and the S pole can be made. Since the magnetic poles of both sides face the substrate support plate side, the adsorption force to the substrate support plate becomes high, and there is an effect of improving the substrate holding performance. Further, by providing a single-sided two-pole magnet, it is possible to reduce the leakage of the magnetic field to the surface of the tray while maintaining the substrate holding performance.

藉由在基板之處理面側之托盤本體表面中，將軛鐵之厚度設定成磁通密度成為100高斯以下，有可以抑制在基板處理裝置上產生異常放電的效果。By setting the thickness of the yoke to a magnetic flux density of 100 gauss or less in the surface of the tray main body on the processing surface side of the substrate, it is possible to suppress the occurrence of abnormal discharge in the substrate processing apparatus.

藉由將單面2極磁鐵以複數N極和S極交互之方式等角度地配置在基板之周圍，具有可以提高基板之保持性能的效果。By arranging the single-sided two-pole magnets at equal angles around the substrate in such a manner that the plurality of N-poles and the S-poles interact with each other, the effect of improving the holding performance of the substrate can be improved.

藉由使用具有基板托盤之基板處理裝置，具有可以抑制微粒之產生或構造物對基板處理之影響，並實現藉由熱傳導媒體之冷卻性能(溫度控制)優良之基板處理 裝置的效果。By using a substrate processing apparatus having a substrate tray, it is possible to suppress the influence of generation of particles or the influence of a structure on a substrate, and to realize substrate processing excellent in cooling performance (temperature control) by a heat conduction medium. The effect of the device.

藉由在托盤保持器和上述基板支撐板各設置用以將冷卻氣體導入至與基板之處理面相反側之面的氣體導入孔，具有可以有效率地冷卻基板之效果。By providing a gas introduction hole for introducing a cooling gas to the surface opposite to the processing surface of the substrate, each of the tray holder and the substrate supporting plate has an effect of efficiently cooling the substrate.

並且，藉由在基板支撐板和托盤保持器之基板支撐器之間設置0.3mm以下之間隙d1，使熱傳導媒體(冷卻氣體)流至該間隙d1，具有可以提高基板之冷卻性能的效果。尤其，藉由將該部分之間隙設成0.3mm以下，可以更降低基板之溫度，尤其在基板上設置剝離用之光阻圖案等之樹脂圖案之時，具有可以以不受到損傷之溫度即是100℃以下來進行成膜之效果。Further, by providing a gap d1 of 0.3 mm or less between the substrate supporting plate and the substrate holder of the tray holder, the heat transfer medium (cooling gas) flows to the gap d1, and the cooling performance of the substrate can be improved. In particular, by setting the gap of the portion to 0.3 mm or less, the temperature of the substrate can be further lowered, and in particular, when a resin pattern such as a resist pattern for peeling is provided on the substrate, the temperature at which the damage can be prevented is The effect of film formation is performed at 100 ° C or lower.

本發明並不限制於上述實施型態，只要在不脫離本發明之精神及範圍，可做各種變更及變形。因此，為了向公眾告知本發明之範圍，附上以下之申請專利範圍。The present invention is not limited to the above-described embodiments, and various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, in order to inform the public of the scope of the invention, the following patent application scope is attached.

本發明係以2012年10月22日所提出之日本國專利申請特願2012-232705號及2013年5月31日提出之國際出願PCT/JP2013/003462為基礎而主張優先權，在此援用其記載內容之全部。The present invention claims priority based on the Japanese Patent Application No. 2012-232705, filed on October 22, 2012, and the International Patent Application PCT/JP2013/003462, filed on May 31, 2013, which is incorporated herein by reference. Record all the contents.

S‧‧‧基板S‧‧‧Substrate

d1‧‧‧間隙D1‧‧‧ gap

3‧‧‧基板托盤3‧‧‧Substrate tray

4‧‧‧托盤保持器4‧‧‧Tray holder

4a‧‧‧端部4a‧‧‧End

4b‧‧‧中央部4b‧‧‧Central Department

31‧‧‧托盤本體31‧‧‧Tray body

31a‧‧‧端部31a‧‧‧End

31b‧‧‧中央部31b‧‧‧Central Department

32‧‧‧基板支撐板32‧‧‧Substrate support board

32a‧‧‧貫通孔32a‧‧‧through hole

32b‧‧‧基板支撐部32b‧‧‧Substrate support

33‧‧‧磁鐵33‧‧‧ magnet

35‧‧‧基板保持部35‧‧‧Substrate retention department

36‧‧‧開口36‧‧‧ openings

36a‧‧‧第1開口部36a‧‧‧1st opening

36b‧‧‧第2開口部36b‧‧‧2nd opening

36r‧‧‧環面36r‧‧‧Torus

42‧‧‧冷卻氣體導入路42‧‧‧Cooling gas introduction

43‧‧‧基板保持面43‧‧‧ substrate holding surface

80‧‧‧O型環80‧‧‧O-ring

81‧‧‧托盤本體和托盤保持器之接觸部分81‧‧‧Contact part of the tray body and the tray holder

82‧‧‧托盤本體和基板之接觸部分82‧‧‧Contact part of the tray body and the substrate

Claims (10)

一種基板處理裝置，具有：處理室；用以將保持基板之基板托盤予以保持的托盤保持器；用以對上述處理室內導入製程氣體之氣體導入部；和用以對上述處理室內進行排氣之排氣部，以對上述基板進行處理，該基板處理裝置之特徵為：上述基板托盤具備托盤本體，和包含支撐上述基板之基板支撐部的基板支撐板，上述托盤本體包含以上述基板應處理之部分露出之方式保持上述基板之周端部的基板保持部，和以藉由磁力使上述托盤本體保持上述基板支撐板之方式，被配置在較上述基板保持部外側之磁鐵，上述基板托盤經密封構件藉由上述托盤保持器被保持。 A substrate processing apparatus comprising: a processing chamber; a tray holder for holding a substrate tray holding the substrate; a gas introduction portion for introducing a process gas into the processing chamber; and exhausting the processing chamber The substrate processing apparatus is characterized in that the substrate processing tray is provided with a tray main body and a substrate supporting plate including a substrate supporting portion for supporting the substrate, and the tray main body includes the substrate to be processed. The substrate holding portion at the peripheral end portion of the substrate is partially exposed, and the magnet is disposed outside the substrate holding portion so that the tray main body holds the substrate supporting plate by magnetic force, and the substrate tray is sealed The member is held by the tray holder described above. 如申請專利範圍第1項所記載之基板處理裝置，其中設置有夾緊上述托盤本體的周邊部之夾緊環，藉由上述夾緊環所產生之推壓，上述托盤本體之下面和上述托盤保持器之托盤本體支撐面被上述密封構件密封。 The substrate processing apparatus according to claim 1, wherein a clamping ring that clamps a peripheral portion of the tray body is provided, and the lower surface of the tray body and the tray are pressed by the clamping ring. The tray body support surface of the holder is sealed by the above-described sealing member. 如申請專利範圍第1項所記載之基板處理裝置，其中上述夾緊環被配置成夾緊與上述密封構件相向之上述托盤本體之周邊部。 The substrate processing apparatus according to claim 1, wherein the clamp ring is disposed to clamp a peripheral portion of the tray body facing the sealing member. 如申請專利範圍第1項所記載之基板處理裝置，其 中上述密封構件為O型環。 The substrate processing apparatus according to claim 1, wherein The above sealing member is an O-ring. 如申請專利範圍第1項所記載之基板處理裝置，其中在上述托盤保持器和上述基板支撐板之至少一方，設置有用以將冷卻氣體導入至與上述基板之處理面相反側之面的氣體導入孔。 The substrate processing apparatus according to the first aspect of the invention, wherein at least one of the tray holder and the substrate supporting plate is provided with a gas introduction for introducing a cooling gas onto a surface opposite to a processing surface of the substrate hole. 如申請專利範圍第1項所記載之基板處理裝置，其中上述磁鐵被埋設在上述托盤本體，在上述托盤本體設置有具有小於上述基板之外徑之第1直徑的第1開口部，和從上述第1開口部延伸至外側之環面，和藉由上述環面與上述第1開口部連接，具有大於上述基板外徑之第2直徑的第2開口部，上述基板保持部係藉由上述第1開口部、上述第2開口部及上述環面而形成，以上述環面和上述基板支撐部夾持上述基板，並藉由上述第2開口部限制上述基板之位置。 The substrate processing apparatus according to claim 1, wherein the magnet is embedded in the tray main body, and the tray main body is provided with a first opening having a first diameter smaller than an outer diameter of the substrate, and a first opening extending to the outer annular surface, and a second opening having a second diameter larger than the outer diameter of the substrate by the annular surface being connected to the first opening, wherein the substrate holding portion is The opening portion, the second opening portion, and the annular surface are formed by sandwiching the substrate with the ring surface and the substrate supporting portion, and the position of the substrate is restricted by the second opening portion. 如申請專利範圍第1項所記載之基板處理裝置，其中在上述托盤本體埋設有軛鐵。 The substrate processing apparatus according to claim 1, wherein the yoke is embedded in the tray body. 如申請專利範圍第1項所記載之基板處理裝置，其中上述托盤本體系由非磁性材料所形成。 The substrate processing apparatus according to claim 1, wherein the tray system is formed of a non-magnetic material. 如申請專利範圍第1項所記載之基板處理裝置，其 中在上述托盤本體設置有：具有小於上述基板之外徑的第1直徑的第1開口部；和從上述第1開口部延伸至外側的環面；和藉由上述環面與上述第1開口部連接且具有大於上述基板之外徑的第2直徑的第2開口部，上述基板保持部係藉由上述第1開口部、上述第2開口部及上述環面所形成，以上述環面和上述基板支撐部夾持上述基板，且藉由上述第2開口部限制上述基板之位置。 The substrate processing apparatus according to claim 1, wherein The tray body is provided with: a first opening having a first diameter smaller than an outer diameter of the substrate; and a toroid extending from the first opening to the outer side; and the toroid and the first opening a second opening having a second diameter that is larger than the outer diameter of the substrate, wherein the substrate holding portion is formed by the first opening, the second opening, and the annular surface, and the torus is The substrate supporting portion sandwiches the substrate, and the position of the substrate is restricted by the second opening. 如申請專利範圍第1項所記載之基板處理裝置，其中在上述托盤本體設置有限制上述基板之位置的開口部。The substrate processing apparatus according to claim 1, wherein the tray body is provided with an opening that restricts a position of the substrate.
TW102137720A 2012-10-22 2013-10-18 Substrate processing device TWI512885B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012232705 2012-10-22
PCT/JP2013/003462 WO2014064860A1 (en) 2012-10-22 2013-05-31 Substrate processing apparatus

Publications (2)

Publication Number Publication Date
TW201432845A TW201432845A (en) 2014-08-16
TWI512885B true TWI512885B (en) 2015-12-11

Family

ID=50544249

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102137720A TWI512885B (en) 2012-10-22 2013-10-18 Substrate processing device

Country Status (5)

Country Link
JP (1) JP6126620B2 (en)
KR (1) KR101785178B1 (en)
CN (1) CN104737283B (en)
TW (1) TWI512885B (en)
WO (1) WO2014064860A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI661510B (en) * 2017-09-06 2019-06-01 京鼎精密科技股份有限公司 Wafer supporting device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097604B (en) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 Processing chamber
CN106048536A (en) * 2016-06-06 2016-10-26 京东方科技集团股份有限公司 Evaporation device and machining method for to-be-evaporated base plate
KR101980004B1 (en) * 2017-09-22 2019-08-28 주식회사 야스 Substrate Fitting Unit For Minimizing Gap Between Mask Sheet and the Substrate
KR20210091557A (en) * 2020-01-14 2021-07-22 한국알박(주) Magnet clamp for tray

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186074A (en) * 1994-12-28 1996-07-16 Hitachi Ltd Sputtering device
JP2002540011A (en) * 1998-12-22 2002-11-26 ステアーグ ミクロテヒ ゲゼルシャフト ミット ベシュレンクテル ハフツング Substrate carrier
TW201129708A (en) * 2009-09-24 2011-09-01 Tokyo Electron Ltd Structure of mounting table, and plasma film-forming apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4095613B2 (en) * 2005-01-13 2008-06-04 大日本スクリーン製造株式会社 Substrate holding device
JP2010062317A (en) * 2008-09-03 2010-03-18 Tokyo Electron Ltd Tray for substrate mounting

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186074A (en) * 1994-12-28 1996-07-16 Hitachi Ltd Sputtering device
JP2002540011A (en) * 1998-12-22 2002-11-26 ステアーグ ミクロテヒ ゲゼルシャフト ミット ベシュレンクテル ハフツング Substrate carrier
TW201129708A (en) * 2009-09-24 2011-09-01 Tokyo Electron Ltd Structure of mounting table, and plasma film-forming apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI661510B (en) * 2017-09-06 2019-06-01 京鼎精密科技股份有限公司 Wafer supporting device

Also Published As

Publication number Publication date
TW201432845A (en) 2014-08-16
WO2014064860A1 (en) 2014-05-01
KR20150070379A (en) 2015-06-24
JPWO2014064860A1 (en) 2016-09-05
KR101785178B1 (en) 2017-11-06
CN104737283A (en) 2015-06-24
JP6126620B2 (en) 2017-05-10
CN104737283B (en) 2017-06-30

Similar Documents

Publication Publication Date Title
TWI503921B (en) A substrate tray and a substrate processing device using the tray
TWI512885B (en) Substrate processing device
US7815782B2 (en) PVD target
US6719886B2 (en) Method and apparatus for ionized physical vapor deposition
JP5192492B2 (en) Vacuum processing apparatus, method for manufacturing image display apparatus using the vacuum processing apparatus, and electronic device manufactured by the vacuum processing apparatus
US11996315B2 (en) Thin substrate handling via edge clamping
TW202114015A (en) Multisubstrate processing system
JP5527894B2 (en) Sputtering equipment
TW202224090A (en) Wafer holder for generating stable bias voltage and thin film deposition equipment using the same
JP2023534646A (en) A method for moving a substrate processing module and a workpiece
JP4185179B2 (en) Sputtering equipment
CN215251141U (en) Thin film deposition apparatus and wafer carrier plate for generating stable bias voltage
US20230212735A1 (en) Substrate processing system
WO2021002141A1 (en) Suction device and vacuum process device
CN114959620A (en) Thin film deposition equipment and wafer bearing disc thereof
JP2006233236A (en) Substrate stand for film deposition apparatus, film deposition apparatus and film deposition method
JP2009088101A (en) Electrostatic chuck system and method of testing vacuum film forming apparatus