TWI511396B - 雷射二極體組件 - Google Patents

雷射二極體組件 Download PDF

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Publication number
TWI511396B
TWI511396B TW102107997A TW102107997A TWI511396B TW I511396 B TWI511396 B TW I511396B TW 102107997 A TW102107997 A TW 102107997A TW 102107997 A TW102107997 A TW 102107997A TW I511396 B TWI511396 B TW I511396B
Authority
TW
Taiwan
Prior art keywords
laser diode
layer
protective layer
housing
diode assembly
Prior art date
Application number
TW102107997A
Other languages
English (en)
Chinese (zh)
Other versions
TW201342752A (zh
Inventor
Alfred Lell
Clemens Vierheilig
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW201342752A publication Critical patent/TW201342752A/zh
Application granted granted Critical
Publication of TWI511396B publication Critical patent/TWI511396B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW102107997A 2012-03-19 2013-03-07 雷射二極體組件 TWI511396B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201210102305 DE102012102305A1 (de) 2012-03-19 2012-03-19 Laserdiodenvorrichtung

Publications (2)

Publication Number Publication Date
TW201342752A TW201342752A (zh) 2013-10-16
TWI511396B true TWI511396B (zh) 2015-12-01

Family

ID=49043864

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102107997A TWI511396B (zh) 2012-03-19 2013-03-07 雷射二極體組件

Country Status (3)

Country Link
CN (2) CN103326232B (de)
DE (1) DE102012102305A1 (de)
TW (1) TWI511396B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9300112B2 (en) 2013-12-18 2016-03-29 Lumentum Operations Llc Packaged laser diode and method of packaging a laser diode
DE102017112223A1 (de) 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
JP2020004783A (ja) * 2018-06-26 2020-01-09 セイコーエプソン株式会社 面発光レーザー、面発光レーザーの製造方法、光信号伝送装置、ロボットおよび原子発振器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021337A (en) * 2008-07-10 2010-06-01 Hamaoka Toshiba Electronics Corp Semiconductor laser device
CN102214894A (zh) * 2010-04-06 2011-10-12 三菱电机株式会社 半导体激光器装置及其制造方法

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NL257131A (de) 1959-10-23
JP2560131B2 (ja) * 1990-05-23 1996-12-04 ローム株式会社 半導体レーザ装置
TW289872B (de) * 1992-12-24 1996-11-01 Sharp Kk
US6590920B1 (en) * 1998-10-08 2003-07-08 Adc Telecommunications, Inc. Semiconductor lasers having single crystal mirror layers grown directly on facet
JP2001135745A (ja) * 1999-11-05 2001-05-18 Shinko Electric Ind Co Ltd 半導体パッケージ用ステム、半導体パッケージ用アイレット、及び半導体パッケージ用アイレットの製造方法
JP4514376B2 (ja) * 2001-09-27 2010-07-28 シャープ株式会社 窒化物半導体レーザ装置
JP2004006824A (ja) * 2002-04-17 2004-01-08 Nichia Chem Ind Ltd 光半導体用パッケージ及びその製造方法
JP2005019973A (ja) * 2003-05-30 2005-01-20 Shinko Electric Ind Co Ltd 光半導体素子用ステムの製造方法
JP2005101073A (ja) * 2003-09-22 2005-04-14 Neomax Material:Kk 半導体素子パッケージのステムおよび同ステム用クラッド材
JP4649172B2 (ja) * 2004-11-09 2011-03-09 新光電気工業株式会社 半導体パッケージ用ステムの製造方法
DE102005053274A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Mehrzahl von Halbleiterchips und Halbleiterbauelement
EP1976004B1 (de) * 2005-12-28 2017-02-15 A.L.M.T. Corp. Halbleiterelement-anbringsubstrat, halbleiteranordnung damit und prozess zur herstellung eines halbleiterelement-anbringsubstrats
US7670886B2 (en) * 2006-06-22 2010-03-02 Tpo Displays Corp. Method for fabricating polysilicon film
US7759764B2 (en) * 2006-10-31 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Elevated bipolar transistor structure
JP5670009B2 (ja) * 2007-02-26 2015-02-18 日亜化学工業株式会社 窒化物半導体レーザ素子
JP5150149B2 (ja) * 2007-07-03 2013-02-20 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
JP5014967B2 (ja) * 2007-12-06 2012-08-29 シャープ株式会社 発光素子及び発光素子の製造方法
CN201417884Y (zh) * 2009-05-19 2010-03-03 唐福云 激光二极管外壳封装管座
JP5383313B2 (ja) * 2009-05-20 2014-01-08 パナソニック株式会社 窒化物半導体発光装置
JP2011060932A (ja) * 2009-09-09 2011-03-24 Panasonic Corp 窒化物半導体発光装置
JP5368957B2 (ja) * 2009-12-04 2013-12-18 シャープ株式会社 半導体レーザチップの製造方法
JP5707772B2 (ja) * 2010-08-06 2015-04-30 日亜化学工業株式会社 窒化物半導体レーザ素子及びその製造方法
JP5369304B2 (ja) * 2010-09-30 2013-12-18 ソイテック 原子層堆積によって半導体材料を形成するためのシステム及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201021337A (en) * 2008-07-10 2010-06-01 Hamaoka Toshiba Electronics Corp Semiconductor laser device
CN102214894A (zh) * 2010-04-06 2011-10-12 三菱电机株式会社 半导体激光器装置及其制造方法

Also Published As

Publication number Publication date
CN105207052A (zh) 2015-12-30
DE102012102305A1 (de) 2013-09-19
CN103326232A (zh) 2013-09-25
CN103326232B (zh) 2015-09-16
TW201342752A (zh) 2013-10-16

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