TWI500785B - Mask plate component for large-size oled evaporation - Google Patents

Mask plate component for large-size oled evaporation Download PDF

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Publication number
TWI500785B
TWI500785B TW102132120A TW102132120A TWI500785B TW I500785 B TWI500785 B TW I500785B TW 102132120 A TW102132120 A TW 102132120A TW 102132120 A TW102132120 A TW 102132120A TW I500785 B TWI500785 B TW I500785B
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Taiwan
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mask
support
oled evaporation
size oled
evaporation according
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TW102132120A
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Chinese (zh)
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TW201410893A (en
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Chih-Ling Wei
Hsiao-Ping Kao
Wei-Ping Chang
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Kun Shan Power Stencil Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Description

大尺寸OLED蒸鍍用掩膜版組件Mask module for large size OLED evaporation

本發明是有關於電子印刷領域,更詳而言之,係關於一種大尺寸OLED蒸鍍用掩膜版組件。This invention relates to the field of electronic printing and, more particularly, to a mask assembly for large size OLED evaporation.

由於有機發光二極體(Organic Light-Emitting Diode,OLED)同時具備自發光,不需背光源、對比度高、厚度薄、視角廣、反應速度快、可用於撓曲性面板、使用溫度範圍廣、構造及製造程序較為簡單等優異之特性,被認為是下一代之平面顯示器新興應用技術。Since the Organic Light-Emitting Diode (OLED) has self-luminous light, it does not require a backlight, has high contrast, thin thickness, wide viewing angle, fast response speed, can be used for flexible panels, and has a wide temperature range. The excellent characteristics of construction and manufacturing procedures are considered to be the next generation of flat panel display emerging application technologies.

OLED生產過程中最重要之一環節是將有機層按照驅動矩陣之要求敷塗到基層上,形成關鍵之發光顯示單元。OLED是一種固體材料,其高精度塗覆技術之發展是制約OLED產品化之關鍵。目前完成這一工作,主要採用真空沉積或真空熱蒸發(VTE)之方法,其是將位於真空腔體內之有機物分子輕微加熱(蒸發),使得這些分子以薄膜之形式凝聚在溫度較低之基層上。在這一過程中需要與OLED發光顯示單元精度相適應之高精密掩膜版組件作為媒介。One of the most important aspects of the OLED production process is to apply the organic layer to the substrate in accordance with the requirements of the driving matrix to form a key light-emitting display unit. OLED is a solid material, and the development of high-precision coating technology is the key to restricting the productization of OLED. At present, this work is mainly carried out by vacuum deposition or vacuum thermal evaporation (VTE), in which the organic molecules in the vacuum chamber are slightly heated (evaporated), so that these molecules are condensed in the form of a film at a lower temperature base. on. In this process, a high-precision mask module that is compatible with the accuracy of the OLED light-emitting display unit is required as a medium.

掩膜版是由掩膜部及掩膜外框構成,圖1所示係為習知小尺寸掩膜版之結構示意圖,其包括一體成型之掩膜部11及用於固定一體成型掩膜部11之掩膜外框12。在實際應用領域中,人們希望製作出更大尺寸之掩膜版,從而滿足量產及大尺寸OLED顯示幕之製造需求,但製作大尺寸掩膜版會存在著以下問題:大尺寸面積之掩膜部由於本身之重量會出現嚴重之下垂現象。為解決這一問題,人們將掩膜部設計成由多個掩膜單元組裝而成,如圖2所示,掩膜部係由若干個掩膜單元20構成,掩膜單元20係通過兩端固定結構200固定掩膜外框上,由於掩膜單元20是通過兩端固定之方式固定,一旦相鄰兩掩膜部固定過程中出現偏差,則相互之間極易產生一定之位置偏移,從而造成OLED產品之良率難以進一步提高。The mask plate is composed of a mask portion and a mask outer frame. FIG. 1 is a schematic structural view of a conventional small-size mask plate, which comprises an integrally formed mask portion 11 and a fixed integral mask portion. 11 mask outer frame 12. In practical applications, people hope to produce masks of larger size to meet the manufacturing needs of mass production and large-size OLED display screens. However, the production of large-size masks will have the following problems: the cover of large-size areas The membrane portion may be severely drooped due to its own weight. In order to solve this problem, the mask portion is designed to be assembled by a plurality of mask units. As shown in FIG. 2, the mask portion is composed of a plurality of mask units 20, and the mask unit 20 is passed through both ends. The fixing structure 200 is fixed on the outer frame of the mask. Since the mask unit 20 is fixed by fixing both ends, once the deviation between the two adjacent mask portions is fixed, a certain positional deviation is easily generated between the two. As a result, the yield of OLED products is difficult to further improve.

有鑑於此,本發明之目的在於提出一種大尺寸OLED蒸鍍用掩膜版組件,以解決習知技術中之種種缺陷。In view of the above, an object of the present invention is to provide a mask module for large-size OLED evaporation to solve various drawbacks in the prior art.

為達到上述目的及其他目的,本發明提供一種大尺寸OLED蒸鍍用掩膜版組件,包括掩膜外框、掩膜部、以及掩膜支撐部,其中,該掩膜部與和固定於該掩膜外框之掩膜支撐部連接;該掩膜支撐部包括N大於等於兩個支撐部單元;該支撐部單元由該支撐條構成,該掩膜部上有掩膜開口,該支撐部單元不會遮擋該掩膜開口,該掩膜開口構成掩膜圖案區。In order to achieve the above and other objects, the present invention provides a mask assembly for a large-sized OLED evaporation, including a mask outer frame, a mask portion, and a mask support portion, wherein the mask portion is fixed to the mask portion The mask support portion of the mask frame is connected; the mask support portion includes N or more than two support portion units; the support portion unit is composed of the support strip, and the mask portion has a mask opening, the support portion unit The mask opening is not obscured, and the mask opening constitutes a mask pattern area.

在本發明之一實施例中,上述之掩膜部至少有一個掩膜圖案區。In an embodiment of the invention, the mask portion has at least one mask pattern region.

在本發明之一實施例中,上述之掩膜部上任一該掩膜開口置於該支撐部中相鄰之兩個該支撐條之間,相鄰之該支撐條之間距係該掩膜開口間距的M倍,該M大於等於1且為正整數。In an embodiment of the present invention, any one of the mask openings on the mask portion is disposed between two adjacent support strips in the support portion, and the distance between the adjacent support strips is the mask opening. M times the pitch, the M is greater than or equal to 1 and is a positive integer.

在本發明之一實施例中,上述之支撐部採用具有磁性能之合金材料。優選地,該支撐部採用因瓦合金材料。In an embodiment of the invention, the support portion is made of an alloy material having magnetic properties. Preferably, the support portion is made of Invar material.

在本發明之一實施例中,上述之掩膜部採用耐磨、耐高溫、耐酸鹼且與該支撐層之間有良好附著力之材料。優選地,該掩膜部採用性能穩定之聚合高分子材料。In an embodiment of the invention, the mask portion is made of a material that is resistant to abrasion, high temperature, acid and alkali, and has good adhesion to the support layer. Preferably, the mask portion is made of a polymer polymer material having stable properties.

在本發明之一實施例中,上述之支撐部厚度之範圍係為大於等於20μm,小於等於60μm。優選地,該支撐部厚度係為20μm、或30μm、或40μm、或50μm、或60μm。In an embodiment of the invention, the thickness of the support portion is in the range of 20 μm or more and 60 μm or less. Preferably, the thickness of the support portion is 20 μm, or 30 μm, or 40 μm, or 50 μm, or 60 μm.

在本發明之一實施例中,上述之掩膜部厚度之範圍係為大於等於2μm,小於等於20μm。優選地,該掩膜部厚度係為2μm、或6μm、或10μm、或14μm、或18μm、或20μm。In an embodiment of the invention, the thickness of the mask portion is in the range of 2 μm or more and 20 μm or less. Preferably, the thickness of the mask portion is 2 μm, or 6 μm, or 10 μm, or 14 μm, or 18 μm, or 20 μm.

在本發明之一實施例中,上述之掩膜開口間距大於等於30μm,小於等於200μm。優選地,該掩膜開口間距大於等於50μm,小於等於100μm。 在本發明之一實施例中,上述之構成該支撐部相鄰該支撐部單元之間係可緊密貼合或者存在一定的支撐部單元間距。In an embodiment of the invention, the mask opening pitch is 30 μm or more and 200 μm or less. Preferably, the mask opening pitch is 50 μm or more and 100 μm or less. In an embodiment of the present invention, the support portion is configured to be in close contact with the support portion unit or has a certain support portion unit spacing.

在本發明之一實施例中,上述之支撐部單元間距係可為該掩膜開口間距的m倍,m為不小於零的整數。In an embodiment of the invention, the support unit spacing may be m times the spacing of the mask openings, and m is an integer not less than zero.

基於上述,根據本發明提供之大尺寸OLED蒸鍍用掩膜版組件,該支撐部可以支撐起該掩膜部,該支撐部固定於掩膜框架上,而該掩膜部固定於該支撐部上,使得該掩膜部相互之間位置確定,如此相對彌補,可以製作滿足高精度,大尺寸OLED屏蒸鍍用之掩膜版。Based on the above, according to the mask module assembly for large-size OLED evaporation provided by the present invention, the support portion can support the mask portion, the support portion is fixed on the mask frame, and the mask portion is fixed to the support portion. In the above, the position of the mask portions is determined relative to each other, so that the masks for high-precision, large-size OLED screen vapor deposition can be produced.

相對於習知掩膜版,可以製作更高PPI(即Pixels per inch所表示之係每英寸所擁有之圖元(pixel)數目)之OLED顯示幕(複合掩膜版主體上每英寸所擁有之開口數量與OLED顯示幕之PPI相對應)。例如:習知掩膜版之開口中心間距為150um時,其對應之PPI=2.54cm/150um≈169;而當本發明中兩條構成掩膜支撐部之支撐條3220之中心間距d1為150um時(如圖6),大尺寸OLED蒸鍍用掩膜版主體之實際PPI為PPI=2.54cm/d3=2.54cm/75um≈339,由此制得之OLED屏亦為339PPI,如此將超越人眼所能看到之極限300PPI。Compared to the conventional mask, an OLED display screen with a higher PPI (the number of pixels per inch represented by Pixels per inch) can be produced (each layer of the composite mask body is owned by each inch). The number of openings corresponds to the PPI of the OLED display screen). For example, when the distance between the center of the opening of the mask is 150 um, the corresponding PPI is 2.54 cm/150 um 169; and when the center distance d1 of the two supporting strips 3220 constituting the mask supporting portion is 150 um in the present invention, (Figure 6), the actual PPI of the mask body for large-size OLED evaporation is PPI=2.54cm/d3=2.54cm/75um≈339, and the OLED screen thus produced is also 339PPI, which will surpass people. The limit of 300 PPI can be seen by the eye.

習知掩膜版之構成材質為金屬合金,本發明中將金屬合金材料作為支撐層,其上與掩膜圖案對應之區域與習知掩膜版相比,內部金屬材料大量減少,雖然增加有機材料構成之掩膜層,但其質量相對較輕,從而使得複合掩膜版之總體質量減少。在以相同之張力將複合掩膜版固定於外框上時,複合掩膜版之內部下垂量也將會減小。The material of the conventional mask is made of a metal alloy. In the present invention, the metal alloy material is used as a support layer, and the area corresponding to the mask pattern is substantially reduced compared with the conventional mask, although the organic material is increased. The material constitutes a mask layer, but its quality is relatively light, resulting in a reduction in the overall quality of the composite mask. When the composite mask is fixed to the outer frame with the same tension, the internal sag of the composite mask will also decrease.

為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。本發明亦可藉由其它不同的具體實施例加以施行或應用,本說明書中的各項細節亦可基於不同觀點與應用,在不悖離本發明之精神下進行各種修飾與變更。The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

須知,本說明書所附圖式中所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上、下”、“一”及“底部”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。It is to be understood that the structure, the proportions, the size, and the like, which are illustrated in the specification of the present specification, are only used for the purpose of understanding and reading by those skilled in the art, and are not intended to limit the present invention. The qualifications of the implementation are not technically meaningful, and any modification of the structure, change of the proportional relationship or adjustment of the size shall remain in the presence of the effects and the objectives that can be achieved without affecting the invention. The technical content disclosed in the present invention can be covered. In the meantime, the terms "upper, lower", "one" and "bottom" are used in the description for convenience of description, and are not intended to limit the scope of the invention. Changes or adjustments are considered to be within the scope of the invention, without departing from the scope of the invention.

另,在本發明的描述中,需要說明的是,除非另有明確之規定和限定,術語“聯接”、“連通”、“相連”、“連接”應做廣義理解,例如,可以係固定連接,一體地連接,也可以係可拆卸連接;可以係兩個組件內部之連通;可以係直接相連,也可以通過中間媒介間接相連,對於本領域之普通技術人員而言,可以具體情況理解上述術語在本發明中之具體含義。In addition, in the description of the present invention, it should be noted that the terms "coupled", "connected", "connected", and "connected" are to be understood broadly, and may be fixedly connected, for example, unless explicitly stated and defined otherwise. , integrally connected, may also be detachable connection; may be internal communication between two components; may be directly connected, or may be indirectly connected through an intermediate medium, for those skilled in the art, the above terms can be understood in specific circumstances The specific meaning in the present invention.

本發明的發明構思如下,由於習知掩膜繃網技術中在生產大尺寸面板會出現大尺寸掩膜版下垂的問題,當尺寸越大,掩膜版下垂的問題對產品之精度、質量都會造成很大影響,同時降低良品率。本發明提供之大尺寸OLED蒸鍍用掩膜版組件通過對大尺寸OLED蒸鍍用掩膜版組件中之掩膜層進行材料結構上之改進,減少其原有之支撐功能,僅具有圖案功能,加設單獨之支撐部以增加大尺寸OLED蒸鍍用掩膜版組件之整體剛度,亦即,強化整體的結構強度。使用整體更加輕便之材料作為掩膜部和支撐部之材料,使掩膜部和支撐部的整體重量減輕,也減少了大尺寸OLED蒸鍍用掩膜版組件可能之下垂量,同時在精確固定支撐部之後貼合上掩膜部,使其定位更加精確,從而使製造更大尺寸面板更加容易實現。The inventive concept of the present invention is as follows. As a result of the conventional mask stretching technology, a large-size mask may sag in the production of a large-sized panel. When the size is larger, the problem of the sag of the mask is correct for the accuracy and quality of the product. Great impact, while reducing the yield. The mask module for large-size OLED evaporation provided by the present invention reduces the original supporting function by modifying the mask layer in the mask module of the large-size OLED evaporation, and has only the pattern function. A separate support portion is added to increase the overall rigidity of the mask module assembly for large-size OLED evaporation, that is, to strengthen the overall structural strength. The use of the overall lighter material as the material of the mask portion and the support portion reduces the overall weight of the mask portion and the support portion, and also reduces the possible drop amount of the mask module for large-size OLED evaporation, while accurately fixing The support portion is then attached to the mask portion to make it more precise, making it easier to manufacture larger-sized panels.

下面將參照附圖來描述本發明之掩膜框架及其對應之掩膜組件,圖3所示係本發明該大尺寸OLED蒸鍍用掩膜版之正面示意圖;圖4係為對應圖3中A-A截線的截面示意圖;圖5為本發明大尺寸OLED蒸鍍用掩膜版之背面示意圖;圖6係為圖5中元件符號50所標註區域的放大結構示意圖。The mask frame of the present invention and its corresponding mask assembly will be described below with reference to the accompanying drawings. FIG. 3 is a front view of the mask for the large-size OLED evaporation of the present invention; FIG. 4 is corresponding to FIG. FIG. 5 is a schematic view showing the back surface of the mask for large-size OLED evaporation according to the present invention; and FIG. 6 is a schematic enlarged view of the area marked by the component symbol 50 in FIG.

根據本發明之實施例,提供一種大尺寸OLED蒸鍍用掩膜版組件,如圖3至圖6所示,本發明所提供的一種大尺寸OLED蒸鍍用掩膜版組件,包括有掩膜外框30、掩膜部31以及支撐部32,其中,該掩膜部31與和固定於該掩膜外框30之該支撐部32連接;該支撐部32包括至少兩個的支撐部單元320。其中,支撐部單元320係由支撐條3200所構成,掩膜部31上有掩膜開口310,該支撐部單元320並不會遮擋該掩膜開口310,俾令該掩膜開口310構成該掩膜部31上之掩膜圖案區。According to an embodiment of the present invention, a mask module for large-size OLED evaporation is provided. As shown in FIG. 3 to FIG. 6 , a mask module for large-size OLED evaporation provided by the present invention includes a mask. The outer frame 30, the mask portion 31 and the support portion 32, wherein the mask portion 31 is connected to the support portion 32 fixed to the mask outer frame 30; the support portion 32 includes at least two support portion units 320 . The support unit 320 is formed by the support strip 3200. The mask portion 31 has a mask opening 310. The support portion 320 does not block the mask opening 310, so that the mask opening 310 constitutes the mask. A mask pattern area on the film portion 31.

根據本發明之實施例,該掩膜部31至少具有一個掩膜圖案區。According to an embodiment of the invention, the mask portion 31 has at least one mask pattern region.

根據本發明之實施例,該掩膜部31上任一該掩膜開口310置於該支撐部單元320中相鄰之兩個該支撐條3200之間,相鄰之該支撐條間距d1係該掩膜開口間距d3的M倍,該M大於等於1且為正整數,如圖6所示。According to an embodiment of the present invention, any one of the mask openings 310 on the mask portion 31 is disposed between two adjacent support strips 3200 in the support portion unit 320, and the adjacent support strip spacing d1 is the mask. M times the film opening pitch d3, which is greater than or equal to 1 and is a positive integer, as shown in FIG.

根據本發明之一些實施例,該支撐條3200均勻分佈排列。According to some embodiments of the invention, the support strips 3200 are evenly distributed.

根據本發明之實施例,該支撐部32採用具有磁性能之合金材料。優選地,該支撐部32採用因瓦合金材料。According to an embodiment of the invention, the support portion 32 is made of an alloy material having magnetic properties. Preferably, the support portion 32 is made of Invar material.

根據本發明之實施例,該掩膜部31採用耐磨、耐高溫、耐酸鹼且與該支撐層之間有良好附著力之材料。優選地,該掩膜部31採用性能穩定之聚合高分子材料。According to an embodiment of the present invention, the mask portion 31 is made of a material that is resistant to abrasion, high temperature, acid and alkali, and has good adhesion to the support layer. Preferably, the mask portion 31 is made of a polymer polymer material having stable properties.

根據本發明之實施例,該支撐部厚度h2大於等於20μm,小於等於60μm,如圖4所示。According to an embodiment of the present invention, the thickness h2 of the support portion is 20 μm or more and 60 μm or less, as shown in FIG.

根據本發明之一些實施例,該支撐部厚度h2為20μm或30μm或40μm或50μm或60μm,如圖4所示。According to some embodiments of the invention, the support portion thickness h2 is 20 μm or 30 μm or 40 μm or 50 μm or 60 μm, as shown in FIG.

根據本發明之實施例,該掩膜部厚度h1大於等於2μm,小於等於20μm,如圖4所示。According to an embodiment of the present invention, the thickness h1 of the mask portion is 2 μm or more and 20 μm or less, as shown in FIG.

根據本發明之一些實施例,該掩膜部厚度h1為2μm或6μm或10μm或14μm或18μm或20μm,如圖4所示。According to some embodiments of the invention, the mask portion thickness h1 is 2 μm or 6 μm or 10 μm or 14 μm or 18 μm or 20 μm, as shown in FIG.

根據本發明之一個實施例,該掩膜部厚度h1為6μm,該支撐部厚度h2為30μm,如圖4所示。According to an embodiment of the present invention, the mask portion has a thickness h1 of 6 μm and the support portion has a thickness h2 of 30 μm as shown in FIG.

根據本發明之實施例,該掩膜開口間距d3大於等於30μm小於等於200μm,如圖6所示。According to an embodiment of the present invention, the mask opening pitch d3 is greater than or equal to 30 μm and less than or equal to 200 μm, as shown in FIG.

優選地,該掩膜開口間距d3大於等於50μm小於等於100μm,如圖6所示。Preferably, the mask opening pitch d3 is 50 μm or more and 100 μm or less, as shown in FIG. 6.

於又一實施態樣中,該掩膜開口間距亦可为75μm。In still another embodiment, the mask opening pitch may also be 75 μm.

根據本發明之一個實施例,該掩膜開口間距d3為75μm,如圖6所示。According to an embodiment of the present invention, the mask opening pitch d3 is 75 μm as shown in FIG.

根據本發明之實施例,構成該支撐部32相鄰該支撐部單元320之間可以貼合或者存在一定之支撐部單元間距d2,如圖6所示。According to the embodiment of the present invention, the support portion 32 may be adjacent to the support portion unit 320 or may have a certain support portion unit spacing d2 as shown in FIG.

優選地,其特徵在於,該支撐部單元間距d2係該掩膜開口間距d3的m倍,m為不小於零的整數,如圖6所示。Preferably, the support portion cell pitch d2 is m times the mask opening pitch d3, and m is an integer not less than zero, as shown in FIG.

構成支撐部32之支撐部單元320在開口310矩陣區域設置成由支撐條3200構成之開口區域,如圖6所示,構成之開口區域之支撐條3200位置不與掩膜部31上之開口310位置重合,作為優選,該支撐條3200均勻分布排列,且相鄰兩支撐條3200間之間距d1與掩膜部31上相鄰兩列開口310間之間距d3有如下關係:d1=n*d3(n=1,2,3,4……)。The support unit 320 constituting the support portion 32 is disposed in a matrix region of the opening 310 as an open region formed by the support strip 3200. As shown in FIG. 6, the support strip 3200 constituting the open region is not positioned with the opening 310 on the mask portion 31. The positions of the support bars 3200 are evenly distributed, and the distance d1 between the adjacent two support bars 3200 and the distance d3 between the adjacent two rows of openings 310 on the mask portion 31 have the following relationship: d1=n*d3 (n=1, 2, 3, 4...).

進一步,如圖6所示,構成掩膜支撐部相鄰兩支撐部單元之間存在一定之間距,作為優選,其間距d2與d3有如下關係:d2=n*d3(n=0,1,2,3,4……)。Further, as shown in FIG. 6, there is a certain distance between adjacent support unit units constituting the mask support portion. Preferably, the pitch d2 and d3 have the following relationship: d2=n*d3 (n=0,1, 2,3,4...).

任何提及“一個實施例”、“實施例”、“示意性實施例”等意指結合該實施例描述之具體構件、結構或者特點包含於本發明之至少一個實施例中。在本說明書各處之該示意性表述不一定指之係相同之實施例。而且,當結合任何實施例描述具體構件、結構或者特點時,所主張的是,結合其他之實施例實現這樣之構件、結構或者特點均落在本發明之保護範圍內。Any reference to "an embodiment", "an embodiment", "an exemplary embodiment" or the like means that a particular component, structure or feature described in connection with the embodiment is included in at least one embodiment of the invention. The illustrative representations throughout the specification are not necessarily referring to the same embodiments. Further, when a specific component, structure, or feature is described in connection with any embodiment, it is claimed that such a component, structure, or feature may be implemented within the scope of the present invention.

儘管參照本發明之多個示意性實施例對本發明之具體實施方式進行了詳細之描述,但是必須理解,本領域技術人員可以設計出多種其他之改進和實施例,這些改進和實施例將落在本發明原理之精神和範圍之內。具體而言,在前述公開、附圖以及申請專利範圍之內,可以在零部件和/或者從屬組合佈局之佈置方面作出合理之變形和改進,而不會脫離本發明之精神。While the embodiments of the present invention have been described in detail with reference to the exemplary embodiments of the embodiments of the invention, it will be understood that many modifications and embodiments It is within the spirit and scope of the principles of the invention. In particular, it is possible to make reasonable modifications and improvements in the arrangement of parts and/or sub-combination arrangements without departing from the spirit of the invention.

11...為掩膜部11. . . Masking department

12...為用於固定一體成型掩膜部11的掩膜外框12. . . a mask frame for fixing the integrally formed mask portion 11

20...為掩膜單元20. . . Mask unit

200...為掩膜單元的兩端200. . . Both ends of the mask unit

30...為掩膜外框30. . . Masking frame

31...為掩膜部31. . . Masking department

32...為支撐部32. . . For the support

320...為支撐部單元320. . . Support unit

h1...為掩膜部厚度H1. . . Mask thickness

h2...為支撐部厚度H2. . . Support thickness

50...為待放大部分50. . . For the part to be enlarged

3200...為支撐條3200. . . Support bar

310...為掩膜開口310. . . Mask opening

d1...為支撐條間距D1. . . Support strip spacing

d2...為支撐單元間距D2. . . Support unit spacing

d3...為掩膜開囗間距D3. . . Masking spacing

圖1所示係為習知小尺寸掩膜版的結構示意圖; 圖2所示係為習知由若干個掩膜單元構成掩膜部的示意圖; 圖3所示係為本發明大尺寸OLED蒸鍍用掩膜版的正面示意圖; 圖4係為對應圖3中A-A方向截切的截面示意圖; 圖5係為本發明大尺寸OLED蒸鍍用掩膜版的背面示意圖;以及 圖6係為圖5中以元件符號50所標註區域的放大結構示意圖。1 is a schematic view showing the structure of a conventional small-sized mask; FIG. 2 is a schematic view showing a mask portion formed by a plurality of mask units; FIG. 3 is a large-size OLED steaming according to the present invention. FIG. 4 is a schematic cross-sectional view of the mask for the large-size OLED evaporation according to the present invention; FIG. 5 is a schematic view of the back side of the mask for the large-size OLED evaporation of FIG. 3; 5 is an enlarged schematic view of a region marked by the component symbol 50.

30...掩膜外框30. . . Mask frame

31...掩膜部31. . . Mask part

32...支撐部32. . . Support

320...支撐部單元320. . . Support unit

h1...掩膜部厚度H1. . . Mask thickness

h2...支撐部厚度H2. . . Support thickness

Claims (14)

一種大尺寸OLED蒸鍍用掩膜版組件,包括掩膜外框、掩膜部、以及支撐部,其中,該掩膜部與和固定於該掩膜外框之該支撐部連接;該支撐部包括至少兩個支撐部單元;該支撐部單元由支撐條構成,該掩膜部上有掩膜開口,該支撐部單元不會遮擋該掩膜開口,該掩膜開口構成掩膜圖案區,而該支撐部厚度之範圍係介於20μm至60μm之間。 A mask assembly for a large-size OLED evaporation, comprising a mask outer frame, a mask portion, and a support portion, wherein the mask portion is connected to the support portion fixed to the mask outer frame; the support portion Including at least two support units; the support unit is composed of a support strip having a mask opening, the support unit does not block the mask opening, and the mask opening constitutes a mask pattern area, and The thickness of the support ranges from 20 μm to 60 μm. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部至少有一個掩膜圖案區。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein the mask portion has at least one mask pattern region. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部上任一該掩膜開口置於該支撐部中相鄰之兩個該支撐條之間,相鄰之該支撐條之間距係大於等於該掩膜開口間距一倍的正整數倍。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein any one of the mask openings on the mask portion is disposed between two adjacent support strips in the support portion, The distance between the adjacent support strips is greater than or equal to a positive integer multiple of the distance between the mask openings. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該支撐部採用具有磁性能之合金材料。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein the support portion is made of an alloy material having magnetic properties. 如申請專利範圍第4項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該支撐部採用因瓦合金材料。 The mask module assembly for large-size OLED evaporation according to claim 4, wherein the support portion is made of Invar material. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部採用耐磨、耐高溫、耐酸鹼且與該支撐層之間有良好附著力之材料。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein the mask portion is made of a material that is resistant to abrasion, high temperature, acid and alkali, and has good adhesion to the support layer. . 如申請專利範圍第6項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部採用性能穩定之聚合高分子材料。 The mask module for large-size OLED evaporation according to claim 6, wherein the mask portion is a polymer polymer material having stable properties. 如申請專利範圍第7項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該支撐部厚度係為20μm、或30μm、或40μm、或50μm、或60μm。 The mask module assembly for large-size OLED evaporation according to claim 7, wherein the support portion has a thickness of 20 μm, or 30 μm, or 40 μm, or 50 μm, or 60 μm. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部厚度之範圍係介於2μm至20μm之間。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein the mask portion has a thickness ranging from 2 μm to 20 μm. 如申請專利範圍第9項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜部厚度係為2μm、或6μm、或10μm、或14μm、或18μm、或20μm。 The mask module for large-size OLED evaporation according to claim 9, wherein the mask portion has a thickness of 2 μm, or 6 μm, or 10 μm, or 14 μm, or 18 μm, or 20 μm. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜開口之間距係介於30μm至200μm之間。 The mask module assembly for large-size OLED evaporation according to claim 1, wherein the distance between the mask openings is between 30 μm and 200 μm. 如申請專利範圍第11項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該掩膜開口之間距係介於50μm至100μm之間。 The mask module assembly for large-size OLED evaporation according to claim 11, wherein the distance between the mask openings is between 50 μm and 100 μm. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,構成該支撐部的相鄰支撐部單元間係緊密貼合或者存在有間距。 The mask module assembly for large-size OLED evaporation according to the first aspect of the invention, wherein the adjacent support unit units constituting the support portion are closely adhered or have a pitch. 如申請專利範圍第1項所述之大尺寸OLED蒸鍍用掩膜版組件,其中,該支撐部單元的間距係大於該掩膜開口間距不小於零的整數倍。The mask module assembly for large-size OLED evaporation according to claim 1, wherein the spacing of the support unit is greater than an integral multiple of the mask opening pitch of not less than zero.
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