TWI498667B - A mask substrate and a mask for manufacturing a flat panel display device - Google Patents

A mask substrate and a mask for manufacturing a flat panel display device Download PDF

Info

Publication number
TWI498667B
TWI498667B TW102138847A TW102138847A TWI498667B TW I498667 B TWI498667 B TW I498667B TW 102138847 A TW102138847 A TW 102138847A TW 102138847 A TW102138847 A TW 102138847A TW I498667 B TWI498667 B TW I498667B
Authority
TW
Taiwan
Prior art keywords
film
semi
transmittance
line
transmissive film
Prior art date
Application number
TW102138847A
Other languages
Chinese (zh)
Other versions
TW201407260A (en
Inventor
Masaru Mitsui
Michiaki Sano
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW201407260A publication Critical patent/TW201407260A/en
Application granted granted Critical
Publication of TWI498667B publication Critical patent/TWI498667B/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Description

用於製造平面顯示器裝置的光罩基底和光罩Photomask substrate and reticle for manufacturing flat panel display devices

本發明之有關於光罩基底和光罩，特別是有關於用以製造FPD之光罩基底(光罩用的基底)及使用相關光罩基底而製造的光罩(轉寫光罩)。The present invention relates to a reticle substrate and a reticle, and more particularly to a reticle substrate (a substrate for a reticle) for fabricating an FPD and a reticle (transfer reticle) fabricated using the associated reticle substrate.

近年，在大型FPD用光罩之區域中，有人嘗試使用具有半透光性膜(所謂的灰階光罩用透光性膜)的灰階光罩而削減光罩枚數(非特許文獻1)。In recent years, in the area of a large-sized FPD mask, attempts have been made to reduce the number of masks by using a gray scale mask having a semi-translucent film (a so-called translucent film for a gray scale mask) (Non-licensed document 1) ).

在此，如圖9(1)及圖10(1)所示，於透明基板上具有遮光部1、透過部2、灰階部3。灰階部3具有調整透過量之功能，例如，如圖9(1)所示，係為形成灰階光罩用半透光性膜3a’之區域；或者，如圖10(1)所示，形成灰階圖案(使用灰階光罩之大型LCD用曝光機之解析極限以下之微細遮光圖案3a及微細透過部3b)之區域。形成灰階部3之目的係降低透過上述區域之光透過量並降低來自此區域之照射量，且將與相關區域對應之光阻之顯影後之膜厚控制為所欲之值。Here, as shown in FIGS. 9(1) and 10(1), the transparent substrate has a light shielding portion 1, a transmission portion 2, and a gray scale portion 3. The gray scale portion 3 has a function of adjusting the amount of transmission, for example, as shown in Fig. 9 (1), is a region in which the semi-transmissive film 3a' for the gray scale mask is formed; or, as shown in Fig. 10 (1) A region in which a gray scale pattern (a fine light-shielding pattern 3a and a fine light-transmitting portion 3b below the analysis limit of the exposure machine for a large LCD using a gray scale mask) is formed. The purpose of forming the gray scale portion 3 is to reduce the amount of light transmitted through the region and reduce the amount of irradiation from the region, and to control the film thickness after development of the photoresist corresponding to the relevant region to a desired value.

在將大型灰階光罩搭載於平面鏡投影(mirror projection)方式或使用透鏡之透鏡方式的大型曝光裝置的情況下，由於通過灰階部3之曝光光線變得不足以作為全體之曝光量的緣故，因此隔著此灰階部3而曝光之正型光阻係僅膜厚變 薄而殘留於基板上。換句話說，由於曝光量之差異使得光阻在對應於通常之遮光部1之部分與對應於灰階部3之部分會對顯影液有不同溶解性的緣故，因此顯影後之形狀乃如圖9(2)及圖10(2)所示，例如對應於通常之遮光部1之部份1’約1μm而對應於灰階部3之部份3’約0.4~0.5μm，另外對應於透過部2之部份係成為沒有光阻之部份2’。而且，在沒有光阻之部份部份2’進行被加工基板之第1蝕刻，並藉由灰化法等而除去與灰階部3對應之薄的部份3’之光阻，且藉由在此部份進行第2蝕刻而以1枚光罩進行習知2枚光罩分量的步驟，以削減光罩枚數。In the case of a large-scale exposure apparatus in which a large-scale gray scale mask is mounted on a mirror projection method or a lens method using a lens, the exposure light passing through the gray scale portion 3 becomes insufficient for the entire exposure amount. Therefore, the positive photoresist that is exposed through the gray scale portion 3 is only changed in film thickness. It is thin and remains on the substrate. In other words, since the difference in the amount of exposure causes the photoresist to have a different solubility to the developer in the portion corresponding to the normal light-shielding portion 1 and the portion corresponding to the gray-scale portion 3, the shape after development is as shown in the figure. 9(2) and FIG. 10(2), for example, corresponding to the portion 1' of the normal light-shielding portion 1 is about 1 μm and the portion corresponding to the gray-scale portion 3 is about 0.4-0.5 μm, which corresponds to transmission. Part 2 is part of the 2' without photoresist. Further, the first etching of the substrate to be processed is performed in the portion 2' where no photoresist is formed, and the photoresist of the thin portion 3' corresponding to the gray scale portion 3 is removed by ashing or the like, and The second etching is performed in this section, and two mask components are conventionally performed by one mask to reduce the number of masks.

【非特許文獻1】月刊FPD Intelligence、P.31-35、1999年5月。[Non-licensed literature 1] Monthly FPD Intelligence, P.31-35, May 1999.

用於製造微處理器、半導體記憶體、系統LSI等半導體元件之LSI用光罩最大頂多為6英吋角左右，且多半係搭載於利用步進式曝光方式之縮小投影曝光裝置而使用。在相關之LSI用光罩中，使用矽晶圓而作為被轉寫基板，切斷成多數晶片而作為最終型態使用。在相關之LSI用光罩中，必須打破以曝光波長而決定之解析度極限，並謀求曝光波長之短波長化。在此，在LSI用光罩中，由排除透鏡系引起之色收差及提升解係度之觀點來看，使用單色之曝光光線(單一波長之曝光光線)。關於此LSI用光罩之單色之曝光波長之短波長化，係朝向超高壓水銀燈之g線(436nm)、i線(365nm)、KrF準分子雷射(248nm)、ArF準分子雷射(193nm)進行。另外，實現形成於LSI用光罩上之光罩圖案之最小線寬為0.26μm左右(形 成於晶圓上之圖案之最小線寬為0.07μm左右)。The LSI photomask for manufacturing semiconductor elements such as a microprocessor, a semiconductor memory, or a system LSI has a maximum of about 6 inches, and is mostly mounted on a reduced projection exposure apparatus using a step exposure method. In the related LSI reticle, a ruthenium wafer is used as a transfer substrate, and is cut into a plurality of wafers to be used as a final type. In the related LSI reticle, it is necessary to break the resolution limit determined by the exposure wavelength, and to shorten the wavelength of the exposure wavelength. Here, in the LSI photomask, a single-color exposure light (a single-wavelength exposure light) is used from the viewpoint of eliminating the color difference caused by the lens system and improving the degree of resolution. The short wavelength of the single-color exposure wavelength of the LSI reticle is toward the g-line (436 nm), i-line (365 nm), KrF excimer laser (248 nm), and ArF excimer laser of the ultrahigh pressure mercury lamp ( 193 nm). In addition, the minimum line width of the reticle pattern formed on the LSI photomask is about 0.26 μm (shape The minimum line width of the pattern formed on the wafer is about 0.07 μm).

相對地，在將FPD用大型光罩搭載於平面鏡投影(藉由掃瞄曝光方式之等倍投影曝光)方式之曝光裝置而使用的情況下，(1)由於僅藉由反射光學系而隔著光罩進行曝光的緣故，因此不會發生像LSI用光罩之透鏡系之存在引起之色收差的問題、及(2)以現狀而言，相較於檢討多色波曝光(具有複數個波長之多波長曝光)之影響(基於透過光或反射光之干涉或色收差之影響等)，由於比單色波曝光(單一波長曝光)確保大的曝光光強度在綜合生產面較有利的緣故，另外搭載於透鏡方式之大型曝光裝置而使用時從上述(2)之記載來看，超利用高壓水銀燈之i線~g線之廣大波長帶域而實施多色波曝光。In contrast, when the FPD is used in an exposure apparatus in which a large-sized photomask is mounted on a flat mirror projection (double-projection exposure by a scanning exposure method), (1) it is separated by only the reflection optical system. Since the mask is exposed, there is no problem that the color difference due to the existence of the lens system of the LSI mask is not generated, and (2) in comparison with the review, the multi-color wave exposure (having plural numbers) The effect of multi-wavelength exposure of wavelength (based on the interference of transmitted or reflected light or the effect of color shift), etc., because larger exposure light intensity than monochromatic wave exposure (single wavelength exposure) is advantageous in the integrated production surface. For the sake of the above-mentioned (2), the multi-color wave exposure is performed by using the wide wavelength band of the i-line to the g-line of the high-pressure mercury lamp.

另外，在FPD用大型光罩基底中，相較於小基板的情況，大尺寸基板基於製造原理上之極限面(製造方法或製造裝置之極限面)之要因、以及製造條件之變動(製程變動)之要因，而在內面及基板間容易產生諸特性(膜組成、膜質、透過率、反射率、光學濃度、蝕刻特性、其他的光學特性、膜厚等)之變異，因此有難以大量製作諸特性均一之內面及基板等特色。此特色乃是伴隨FPD之更大型化‧高精細化而增長之傾向。In addition, in the large-sized photomask substrate for FPD, the large-size substrate is based on the manufacturing principle principle (the manufacturing method or the limit surface of the manufacturing device), and the variation of the manufacturing conditions (process variation) compared to the case of the small substrate. ), the characteristics of the film (film composition, film quality, transmittance, reflectance, optical density, etching characteristics, other optical properties, film thickness, etc.) are likely to occur between the inner surface and the substrate. Features such as inner surface and substrate are uniform. This feature is a tendency to grow with the larger size and higher definition of FPD.

在此，在內面及基板間諸特性變異大的情況下，有以之缺點。Here, there are disadvantages in the case where the characteristics of the inner surface and the substrate vary greatly.

(1)諸特性之變異大的製品，以變異大這點而言，不能說是高品質；在性能面這方面來說，也不能說是良好。(1) A product with a large variation in characteristics cannot be said to be of high quality in terms of large variation; it cannot be said to be good in terms of performance.

(2)一旦諸特性變異大的話，要控制在規格內是很難的，且要大量製造控制在規格內之產品是困難且辛苦的。(2) Once the characteristics vary greatly, it is difficult to control within the specifications, and it is difficult and laborious to manufacture a large number of products controlled within the specifications.

(3)由於諸特性之變異大的緣故，容易超出規格外，而降低生產性(產量)。(3) Due to the large variation in characteristics, it is easy to exceed the specifications and reduce productivity (yield).

(4)一旦諸特性之變異大的話，為了配合此變異也必須放鬆規格。因此，無法追求高規格化，也難以對應高規格化。(4) Once the variation of the characteristics is large, the specifications must be relaxed in order to cope with this variation. Therefore, it is impossible to pursue high standardization, and it is difficult to cope with high standardization.

而且，形成於FPD用大型光罩之圖案之最小線寬為1μm左右以下，形成於被轉寫用大型玻璃基板上圖案之最小線寬為2~3μm左右，比最先端LSI之最小線寬大。但是，相較於LSI而言，FPD係作為大面積之1個FPD製品而使用，最終型態為大面積，因此多數之元件之全部必須具有功能。因此，一旦有阻害全部元件之功能的缺陷及阻害之可能性的話，則絕不容許有能想到之規格外的缺陷。如此一來，在FPD製品中，雖然必須在大面積中實現無缺陷，但是在FPD用大型光罩基板之內面及基板間諸特性之變異大的情況下，會有例如難以提升FPD用大型光罩及大面積FPD製品之品質或產量等特色。此特色乃是伴隨FPD之更大型化‧高精細化而增長之傾向。Further, the minimum line width of the pattern formed in the large-sized photomask for FPD is about 1 μm or less, and the minimum line width of the pattern formed on the large-sized glass substrate for transfer is about 2 to 3 μm, which is larger than the minimum line width of the most advanced LSI. However, compared to LSI, FPD is used as a large-area FPD product, and the final type is a large area, so all of the components must have functions. Therefore, once there is a possibility of hindering the function of all the components and the possibility of hindrance, defects outside the specifications can be never allowed. In this case, in the FPD product, it is necessary to achieve no defects in a large area. However, when the variation between the characteristics of the inner surface of the large-sized photomask substrate for FPD and the substrate is large, for example, it is difficult to increase the large size of the FPD. Features such as the quality and output of masks and large-area FPD products. This feature is a tendency to grow with the larger size and higher definition of FPD.

如以上所述，在FPD用大型光罩中，基於光罩使用環境之差異或光罩尺寸之差異等，可以說必須要求(即有檢討之必要)在LSI用光罩未要求(即無檢討之必要)之特性。As described above, in the large-sized photomask for FPD, depending on the difference in the use environment of the mask or the difference in the size of the mask, it can be said that it is required (that is, it is necessary for review). The mask for LSI is not required (ie, there is no review). The characteristics of the necessary).

關於基於上述光罩之使用環境之差異等而生之FPD用大型光罩特有之要求特性，本發明者係著眼於多色波曝光。The present inventors focused on multi-color wave exposure regarding the unique characteristics peculiar to the large reticle for FPD based on the difference in the use environment of the reticle.

首先，複數個波長之曝光(多色波曝光)處理之優點係曝光光強度較單一波長之曝光(單色波曝光)之情況大。例如，與僅僅i線、或僅僅g線之單色波曝光相比，以包含h線且橫跨i線至g線之波長帶域之光進行曝光則其曝光光強度較大。因此，可以提升元件之生產性。First, the advantage of exposure (multi-color wave exposure) of a plurality of wavelengths is that the exposure light intensity is larger than that of a single wavelength exposure (monochrome exposure). For example, exposure light having a h-line and a wavelength band spanning the i-line to the g-line is exposed to a larger intensity than a monochromatic wave or only a g-line monochromatic wave exposure. Therefore, the productivity of the component can be improved.

例如，有很多利用等倍曝光法而製造FPD裝置等大型顯示器元件的情況。相較於在LSI元件等製造中所使用之縮小曝光法而言，在等倍曝光法中由於照射在元件面之曝光光線之入射強度小的緣故，因此藉由利用複數個波長而得到補強照射在元件面之曝光光線之入射強度的優點。For example, there are many cases where large display elements such as FPD devices are manufactured by the double exposure method. Compared with the reduction exposure method used in the manufacture of an LSI device or the like, in the double magnification method, since the incident intensity of the exposure light irradiated on the element surface is small, the reinforcing radiation is obtained by using a plurality of wavelengths. The advantage of the incident intensity of the exposed light on the component side.

本申請案之目的係有鑑於伴隨多色波曝光所發生之問題點而提出對策。The purpose of this application is to propose countermeasures in view of the problems that occur with exposure to polychromatic waves.

本發明者係著眼於FPD用大型光罩中特有之多色波曝光，而研究關於適合此多色波曝光之FPD用大型光罩中特有之要求特性。The present inventors focused on the multi-color wave exposure unique to the FPD large-sized photomask, and studied the characteristic characteristics unique to the large-sized photomask for FPD suitable for the multi-color wave exposure.

結果，明瞭以下事項。As a result, the following matters were clarified.

(1)由作為曝光光源之超高壓水銀燈所放射之i線、h線、g線之曝光光強度(相對強度)係大略相等。更詳細地說，雖然i線、h線、g線之曝光光強度(相對強度)大略相等，但是相較於兩端之i、g線之強度而言中央之h線之強度約略較低(參照圖1)。(1) The exposure light intensity (relative intensity) of the i-line, the h-line, and the g-line radiated by the ultrahigh pressure mercury lamp as an exposure light source is substantially equal. In more detail, although the exposure light intensities (relative intensities) of the i-line, the h-line, and the g-line are slightly equal, the intensity of the central h-line is about slightly lower than the intensity of the i and g-lines at both ends ( Refer to Figure 1).

換句話說，以相對強度而言，i線、h線、g線係有必要同等重視，而關於在隔著光罩之曝光時因應相對強度而發現之作用(例如，光阻之感光作用等)也有必要同等重視。In other words, in terms of relative intensity, it is necessary to pay equal attention to the i-line, the h-line, and the g-line system, and to find the effect due to the relative strength when exposed to the photomask (for example, the photosensitivity of the photoresist, etc.) ) It is also necessary to pay equal attention.

在此，一旦考慮灰階光罩用半透光性膜(半透光性膜)之透過率(半透過率)的話，半透光性膜之透過率(即半透過率)T之分光曲線係波長λ之函數，以T=f(λ)表示。此半透光性膜之透過率(即半透過率)T之分光曲線主要由膜材料、膜組成、膜質、製造條件、製造裝置等決定。Here, once the transmittance (semi-transmission rate) of the semi-transmissive film (semi-transmissive film) for the gray scale mask is considered, the transmittance of the translucent film (ie, the semi-transmission rate) T is divided. A function of the wavelength λ, expressed as T = f(λ). The spectral curve of the transmittance (i.e., the half transmittance) of the semi-transmissive film is mainly determined by the film material, the film composition, the film quality, the production conditions, the manufacturing apparatus, and the like.

另一方面，半透光性膜之透過率(即半透過率)T係以T=I/Io...式(1)表示(式(1)中，T：半透光性膜之透過率(即半透過率)、Io：入射光強度、I：透過光強度)。On the other hand, the transmittance (i.e., the semi-transmissivity) T of the semi-transmissive film is expressed by T = I / Io (1) (in the formula (1), T: the translucency of the semi-translucent film Rate (ie, half transmittance), Io: incident light intensity, I: transmitted light intensity).

由以上可知，i線、h線、g線之相對強度係相等，因此i線、h線、g線之入射光強度Io相等；假如不管i線、h線、g線之波長，半透光性膜之透過率(即半透過率)T相等的話，則由上述(1)式可知相對於i線、h線、g線之透過光強度I也相等；較佳者，上述特性應由例如光阻之感光作用之易於模擬的程度等觀點來考量。It can be seen from the above that the relative intensities of the i-line, the h-line, and the g-line are equal, so the incident light intensity Io of the i-line, the h-line, and the g-line is equal; if the wavelengths of the i-line, the h-line, and the g-line are half-transparent, When the transmittance (i.e., the half transmittance) T of the film is equal, the transmitted light intensity I with respect to the i-line, the h-line, and the g-line is also equal to the above equation (1). Preferably, the above characteristics are, for example, The degree to which the photosensitivity of the photoresist is easily simulated is considered.

換句話說，在縱軸：半透光性膜之透過率(即半透過率)T-橫軸：波長λ之分光曲線中，在i線~g線之廣大波長帶域中，以具有平坦分光特性之分光透過率線(即與橫軸相對之傾斜的小分光透過率線)者較佳。相對於半透光性膜之透過率(即半透過率)之分光透過率線之橫軸的傾斜度雖然因縱軸刻度之取法而變動(變化)，但是縱軸之刻度相同的話比較有可能。In other words, in the longitudinal axis: the transmittance of the semi-transmissive film (ie, the half transmittance) T-horizon axis: the wavelength λ, in the broad wavelength band of the i-th to g-line, The split light transmission line of the spectral characteristic (i.e., the oblique small transmittance light transmittance line opposite to the horizontal axis) is preferable. The inclination of the horizontal axis of the split light transmittance line with respect to the transmittance of the semi-transmissive film (that is, the half transmittance) is varied (changed) by the vertical axis scale, but the scale of the vertical axis is the same. .

(2)相對於i線、h線、g線具有大約相等之半透光性膜之透過率(即半透過率)的膜係可以實際製造。(2) A film system having a transmittance (i.e., a half transmittance) of an approximately equal half-transmissive film with respect to the i-line, the h-line, and the g-line can be actually manufactured.

(3)在使用於多色波曝光之大型FPD用光罩中， 藉由將相對於相對強度約略相等之i線、h線、g線而言具有約略相等之半透光性膜之透過率(即半透過率)的膜實際地應用於光罩基底及光罩，相較於適用相對於i線、h線、g線之半透光性膜之透過率(即半透過率)之變動幅度大的膜的情況下，易於大量地製作內面及基板間半透光性膜之透過率(即半透過率)均一之產品，因此可以促進光罩基底高品質化及提升產出等，所以可以促進大面積FPD製品之高品質化或提升產出等。(3) In a large FPD reticle for multi-color wave exposure, A film having a transmittance (i.e., a half transmittance) of a substantially uniform semi-transmissive film with respect to i lines, h lines, and g lines which are approximately equal in relative strength is practically applied to a mask substrate and a mask. In the case of a film having a large variation in transmittance (i.e., semi-transmissivity) with respect to the semi-transmissive film of the i-line, the h-line, and the g-line, it is easy to produce the inner surface and the inter-substrate half in a large amount. Since the transmittance of the light-transmitting film (that is, the semi-transmission rate) is uniform, the quality of the mask base can be improved and the output can be improved, so that the quality of the large-area FPD product can be promoted or the output can be improved.

(4)與上述(1)、(3)相關，比起進行考量多色波曝光之影響(透過光之干涉之影響等)之膜設計而言，則作成相對於i線、h線、g線具有約略相等之半透光性膜之透過率(即半透過率)的膜設計係有益於光罩基底及FPD製品本身之高品質化及產出提升等。(4) In relation to the above (1) and (3), compared with the i-line, the h-line, and the g, the film design that considers the influence of the multi-color wave exposure (the influence of the interference of the transmitted light, etc.) The film design of the line having a transmittance of approximately equal light transmissive film (i.e., semi-transmissivity) is beneficial to the high quality and output improvement of the reticle substrate and the FPD article itself.

(5)與上述(1)、(3)、(4)相關，為了至少相對於i線、h線、g線具有約略相等之半透光性膜之透過率(即半透過率)，則經光學設計並製作之分光透過率線之傾斜為平坦的膜係以在較包含i線~g線更廣的波長帶域中分光透過率線之傾斜為平坦之膜(例如，在橫跨波長330nm~470nm之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度為未滿10%(甚至未滿5%)而經光學設計並製作的膜)者較佳，且因應製造條件之變動(製程變動)、或隨之而生之膜組成之變動或膜質(物性)之變動等而透光性膜之透過率(即半透過率)之變動幅度H小(參照圖7(1))，因此，易於大量地製造(參照圖8(2))更均一的產品(較規格k、k’更嚴格之光罩基底或光罩)，另外，易於進一步提升位於規格k、k’內之 光罩基底或光罩的產出並大量地製造(參照圖7(2))。(5) In connection with the above (1), (3), and (4), in order to have a transmittance (i.e., a half transmittance) of the semi-transmissive film which is approximately equal to at least the i-line, the h-line, and the g-line, The optically designed and fabricated spectral transmittance line is inclined to a flat film system to split the light transmittance line into a flat film in a wavelength band wider than the i-line to the g-line (for example, at a wavelength across the wavelength) In the wavelength range of 330 nm to 470 nm, the transmittance of the semi-transmissive film (ie, the half transmittance) is preferably less than 10% (or even less than 5%) and is optically designed and fabricated. And the variation range H of the transmittance (ie, the half transmittance) of the light transmissive film is small in response to fluctuations in manufacturing conditions (changes in the process), or changes in the film composition or changes in film quality (physical properties). Referring to Fig. 7 (1)), therefore, it is easy to mass-produce (refer to Fig. 8 (2)) a more uniform product (a reticle base or a reticle which is more strict than the specifications k, k'), and further, it is easy to further enhance the lie. Within the specifications k, k' The reticle base or the reticle is produced and manufactured in large quantities (refer to Fig. 7 (2)).

相對地，在上述波長帶域中，一旦傾斜嚴重且分光透過率之變動幅度H’大的話(參照圖7(2))，在很的少的製程變動下，分光透過率線會向上下左右偏移，因而造成諸特性之均一性變差(參照圖8(1))，另外因為分光透過率線之偏移，則落在規格k、k’外之比例也增加的緣故，因此難以製造且生產性也不良(參照圖7(2))。因此，以現實來說，相對於平坦的情況而言，不放鬆規格k、k’則無法提高生產性而製造。In contrast, in the above-mentioned wavelength band, when the inclination is severe and the fluctuation width H′ of the spectral transmittance is large (see FIG. 7( 2 )), the spectral transmittance line will go up and down with a small number of process variations. Since the offset is degraded, the uniformity of the characteristics is deteriorated (see Fig. 8 (1)), and the shift of the spectral transmittance line is increased, and the ratio falling outside the specifications k and k' is also increased, so that it is difficult to manufacture. Moreover, productivity is also poor (refer to Fig. 7 (2)). Therefore, in reality, in the case of flatness, the specifications k and k' are not relaxed, and the productivity cannot be improved.

一旦位於上述波長帶域之分光透過率線之變動幅度h’原本就大的話，則分光透過率線之偏移前後之變動幅度H’也變大(參照圖7(1))。相對地，一旦位於上述波長帶域之分光透過率線之變動幅度h’原本就小的話，則偏移前後之變動幅度H也變小(參照圖7(1))。這是因為在由製程變動而導致分光透過率線向上下左右偏移的情況下，以偏移前之最低值與偏移後之最大值所構成之變動幅度H’比分光透過率線之傾斜為平坦之情況下的變動幅度H(假定向上下左右方向之偏移量相同的情況下)大的緣故(參照圖7(1))。When the fluctuation width h' of the spectral transmittance line located in the wavelength band is originally large, the fluctuation width H' before and after the dispersion of the spectral transmittance line is also large (see Fig. 7 (1)). On the other hand, when the fluctuation width h' of the spectral transmittance line located in the wavelength band is originally small, the fluctuation width H before and after the offset is also small (see Fig. 7 (1)). This is because when the spectral transmittance line is shifted upward, downward, and leftward by the process variation, the fluctuation width H' formed by the lowest value before the offset and the maximum value after the offset is inclined from the spectral transmittance line. In the case of being flat, the fluctuation width H (assuming that the amounts of shift in the up, down, left, and right directions are the same) is large (see FIG. 7(1)).

另外，一旦分光透過率線之傾斜嚴重的話(一旦變動幅度大的話)，則相對於規格值k、k’之容限(margin)m’難取，另外一旦為了配合變動幅度之上限而決定取充分的容限m’的話，則規格值k’變得過於差(參照圖7(2))。相對地，一旦分光透過率線之傾斜為平坦的話，則可以將相對於變動幅度之上限之容限m取得較大(使具有餘裕)(參照圖7(2))。In addition, once the inclination of the spectral transmittance line is severe (when the fluctuation range is large), the margin m' with respect to the specification values k and k' is difficult to obtain, and it is determined to match the upper limit of the fluctuation range. When the tolerance m' is sufficient, the specification value k' becomes too poor (see Fig. 7 (2)). On the other hand, when the inclination of the spectral transmittance line is flat, the tolerance m with respect to the upper limit of the fluctuation width can be made large (with a margin) (see FIG. 7 (2)).

在位於上述波長帶域之分光透過率線之變動幅度大之膜的情況下，即使有分光透過率線之變動幅度內之變化(例如，傾斜變化或線偏移等)，也由於當作由同一個膜所製造而管理、認定的緣故，所以較不好(參照圖8(1))。In the case of a film having a large fluctuation range of the spectral transmittance line in the wavelength band, even if there is a change in the fluctuation range of the spectral transmittance line (for example, a tilt change or a line shift), It is not easy to manage and identify the same film, so it is not good (refer to Figure 8 (1)).

(6)與上述(2)相關，在發現可以實際地製造相對於i線、h線、g線且具有約略相同之半透光性膜之透過率(即半透過率)的膜的課程中，明瞭以下事項。(6) In connection with the above (2), it has been found that a film which can actually manufacture a film having a transmittance (i.e., a half transmittance) of an approximately semi-transmissive film with respect to an i-line, an h-line, and a g-line is obtained. The following matters have been clarified.

(i)由於鉻氧化膜系之灰階光罩用半透光性膜(例如，CrO膜等)等膜中含有O的緣故(由於膜中之O多的緣故)，因此在比包含橫跨i線~g線之波長帶域更廣的波長帶域中，基本上分光透過率線之傾斜(對於橫軸λ之傾斜大)大，分光透過率之變動幅度變大。(i) O is contained in a film such as a semi-transmissive film (for example, a CrO film) for a gray scale mask of a chromium oxide film (due to O in the film), so In the wavelength band having a wider wavelength band of the i-th line to the g-line, the inclination of the spectral transmittance line (larger inclination to the horizontal axis λ) is large, and the variation range of the spectral transmittance increases.

(ii)相較於鉻氧化膜系半透光性膜而言，在鉻氮化膜系半透光性膜(例如，CrN、CrCN、CrON)中，雖然在比包含橫跨i線~g線之波長帶域更廣的波長帶域中，基本上分光透過率線之傾斜緩和且平坦(對於橫軸λ之傾斜小)，但是為了達成光罩基底及FPD本身之高品質化或易於大量地製造更均一之產品(規格嚴之產品)等目的，則不僅不論何種鉻氮化膜系半透光性膜也可以達成相關目的，還必須發現並使用滿足可以達成相關目的之預定條件之鉻氮化膜系半透光性膜。換句話說，即使是膜材料相同之鉻氮化膜系，即使膜材料相同，也會因為膜組成之調整、製造條件、製造裝置等之選定及控制、膜質之控制(藉由上述參數進行)等之差異而有滿足預定條件與不滿足預定條件的情況。(ii) in the chrome nitride film-based semi-transmissive film (for example, CrN, CrCN, CrON), although the ratio exceeds the i-line to g in comparison with the chrome oxide film-based semi-transmissive film. In the wider wavelength band of the wavelength band of the line, the inclination of the spectral transmittance line is moderate and flat (the inclination to the horizontal axis λ is small), but in order to achieve high quality or easy mass of the mask base and the FPD itself For the purpose of manufacturing a more uniform product (a product with strict specifications), not only the chrome nitride film, but also a semi-transmissive film can achieve related purposes, and must also find and use predetermined conditions that meet the relevant objectives. The chromium nitride film is a semi-transmissive film. In other words, even if the film material is the same as the chrome nitride film, even if the film material is the same, the film composition is adjusted, the manufacturing conditions, the selection and control of the manufacturing device, and the control of the film quality (by the above parameters). The difference is equal to the case where the predetermined condition is satisfied and the predetermined condition is not satisfied.

(iii)關於MoSi系之灰階光罩用半透光性膜，相較於鉻氧化膜系半透光性膜而言，在比包含橫跨i線~g線之波長帶域更廣的波長帶域中，基本上分光透過率線之傾斜也緩和且平坦。但是，為了達成光罩基底及FPD本身之高品質化或易於大量地製造更均一之產品(規格嚴之產品)等目的，則不僅不論何種MoSi系半透光性膜也可以達成相關目的，還必須發現並使用滿足可以達成相關目的之預定條件之MoSi系半透光性膜。換句話說，即使是膜材料相同之MoSi，即使膜材料相同，也會因為膜組成之調整、製造條件、製造裝置等之選定及控制、膜質之控制(藉由上述參數進行)等之差異而有滿足預定條件與不滿足預定條件的情況。就可以滿足預定之條件且達成上述目的之MoSi系半透光性膜而言，適合者例如是MoSi4 、MoSi2 等半透光性膜。而且，相對於MoSi4 半透光性膜而言，MoSi2 半透光性膜在將橫軸之刻度弄成相同而比較之際，由於在比包含橫跨i線~g線之波長帶域更廣的波長帶域中分光透過率線之傾斜係變得更平坦的緣故，因此較不好。(iii) The semi-transmissive film for the gray-scale mask of the MoSi system is wider than the wavelength band including the cross-i line to the g-line, compared to the chrome oxide film-translucent film. In the wavelength band, the tilt of the substantially split transmittance line is also moderate and flat. However, in order to achieve high quality of the mask base and the FPD itself, or to easily manufacture a more uniform product (a product having a strict specification), it is possible to achieve a related purpose regardless of the MoSi-based semi-transmissive film. It is also necessary to find and use a MoSi-based semi-transmissive film which satisfies predetermined conditions for achieving the relevant purpose. In other words, even if the film material is the same, even if the film material is the same, the film composition is adjusted, the manufacturing conditions, the selection and control of the manufacturing device, and the control of the film quality (by the above parameters) are different. There are cases where the predetermined condition is satisfied and the predetermined condition is not satisfied. The MoSi-based semi-transmissive film which satisfies the predetermined conditions and achieves the above object is suitably a semi-transmissive film such as MoSi 4 or MoSi 2 . Further, with respect to the MoSi 4 semi-transmissive film, the MoSi 2 semi-transmissive film is compared in the wavelength range including the i-line to the g-line in comparison with the scale of the horizontal axis being the same. The inclination of the spectral transmittance line in the wider wavelength band becomes flatter, which is not preferable.

本發明方法係具有以下之構成。The method of the present invention has the following constitution.

(構成1)一種用於製造FPD裝置的光罩基底，係於透光性基板上製造至少具有灰階光罩用半透光性膜之FPD裝置，其中灰階光罩具有調整透過量之功能；其特徵在於：前述灰階光罩用半透光性膜係一種在橫跨由超高壓水銀燈放射之至少i線至g線的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於5%以下之範圍的 膜。(Configuration 1) A reticle substrate for fabricating an FPD device, which is a FPD device having at least a semi-transmissive film for a gray scale mask on a light-transmitting substrate, wherein the gray-scale reticle has a function of adjusting the amount of transmission The semi-transmissive film for the gray scale mask is a transmittance of the semi-transmissive film in a wavelength band spanning at least the i-line to the g-line radiated by the ultra-high pressure mercury lamp (ie, The variation of the semi-transmission rate is controlled within the range of 5% or less. membrane.

(構成2)一種用於製造FPD裝置的光罩基底，係於透光性基板上製造至少具有灰階光罩用半透光性膜之FPD裝置，其中灰階光罩具有調整透過量之功能；其特徵在於：前述灰階光罩用半透光性膜係一種在橫跨330nm~470nm的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於10%以下之範圍的膜。(Configuration 2) A reticle substrate for fabricating an FPD device, which is a FPD device having at least a semi-transmissive film for a gray scale reticle on a light-transmissive substrate, wherein the gray-scale reticle has a function of adjusting the amount of transmission The semi-transmissive film for the gray scale mask is characterized in that the variation range of the transmittance (ie, the half transmittance) of the semi-transmissive film is controlled in a wavelength band spanning from 330 nm to 470 nm. A film in the range of 10% or less.

(構成3)如構成2所述之用於製造FPD裝置的光罩基底，其中前述灰階光罩用半透光性膜係一種在橫跨330nm~470nm的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於5%以下之範圍的膜。(Construction 3) The photomask substrate for fabricating an FPD device according to the second aspect, wherein the semi-transmissive film for the gray scale mask is a semi-transparent property in a wavelength band spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (ie, the half transmittance) of the film is controlled to a film of a range of 5% or less.

(構成4)如構成1至3中任一項所述之用於製造FPD裝置的光罩基底，其中灰階光罩用半透光性膜係一種必須滿足上述要件並經光學設計而製作之氮化鉻膜系的半透光性膜。(Attachment 4) The reticle substrate for fabricating an FPD device according to any one of 1 to 3, wherein the semi-transmissive film for the gray scale reticle is a film which must satisfy the above requirements and is optically designed. A semi-translucent film of a chromium nitride film.

(構成5)如構成1至3中任一項所述之用於製造FPD裝置的光罩基底，其中灰階光罩用半透光性膜係一種必須滿足上述要件並經光學設計而製作之MoSi系的半透光性膜。(Claim 5) The reticle substrate for manufacturing an FPD device according to any one of Embodiments 1 to 3, wherein the semi-transmissive film for the gray scale reticle is one which must satisfy the above requirements and is optically designed. A semi-translucent film of MoSi type.

(構成6)一種光罩基底，係於透光性基板上至少具有半透光性膜，其中前述半透光性膜具有調整透過量之功能；前述光罩基底係一種前述半透光性膜經圖案化處理而成為光罩後於製造元件之際藉由包含複數個波長之曝光 光線而進行曝光處理之光罩用的光罩基底；其特徵在於：前述半透光性膜係一種在橫跨由超高壓水銀燈放射之至少i線至g線的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於5%以下之範圍的膜。(Configuration 6) A reticle substrate having at least a semi-transmissive film on a light-transmitting substrate, wherein the semi-transmissive film has a function of adjusting a transmittance; and the reticle substrate is a semi-transmissive film After being patterned to become a mask, the exposure of the component is performed by including a plurality of wavelengths. a reticle substrate for a photomask that is exposed to light; wherein the semi-transmissive film is a semi-transmissive light in a wavelength band spanning at least the i-line to the g-line radiated by the ultra-high pressure mercury lamp The fluctuation range of the transmittance (that is, the half transmittance) of the film is controlled to a film of a range of 5% or less.

(構成7)一種用於製造FPD裝置之光罩，係使用構成1至5中任一項所述之光罩基底而製造，且至少具有灰階光罩用半透光性膜。(Configuration 7) A photomask for manufacturing an FPD device manufactured by using the photomask substrate according to any one of 1 to 5, and having at least a semi-transmissive film for a gray scale mask.

(構成8)一種光罩，係使用構成6所述之光罩基底而製造。(Configuration 8) A photomask manufactured by using the photomask substrate of the configuration 6.

根據本發明的話，可以提供適用於多色波曝光之FPD用大型光罩及光罩基底。According to the present invention, it is possible to provide a large reticle and a reticle substrate for FPD suitable for multicolor wave exposure.

以下，更詳細地說明本發明。Hereinafter, the present invention will be described in more detail.

在本發明之用於製造FPD裝置之光罩基底及光罩中，前述灰階光罩用半透光性膜係一種在橫跨由超高壓水銀燈放射之至少i線至g線的波長帶域中將半透光性膜之透過率(半透過率)之變動幅度控制於5%以下之範圍的膜，藉此，相對於i線、h線、g線之灰階光罩用半透光性膜的透過率(亦即半透過率)係與波長無關且幾乎相等(例如，半透光性膜之透過率(亦即半透過率)之差異係未滿5%)(構成1)。In the reticle substrate and the reticle of the present invention for manufacturing an FPD device, the semi-transmissive film for the gray scale reticle is a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The film is controlled to have a variation range of the transmittance (semi-transmissivity) of the semi-transmissive film in a range of 5% or less, whereby the gray-scale mask for the i-line, the h-line, and the g-line is semi-transparent. The transmittance (i.e., the half transmittance) of the film is almost independent of the wavelength (for example, the difference in transmittance (i.e., half transmittance) of the semi-transmissive film is less than 5%) (constitution 1).

在本發明中，滿足上述要件之灰階光罩用透光性膜乃是除了選擇可以滿足上述要件之膜材料之外，並考慮到膜組成之調整、製造條件、製造裝置等之選定及控制，且於確認藉由膜質之控制(藉由上述參數進行)等可以滿足上述要件後 而得到。即使膜材料相同，也會因為膜組成之調整、製造條件、製造裝置等之選定及控制、膜質之控制(藉由上述參數進行)等之差異而有滿足上述要件與不滿足上述要件的問題。In the present invention, the light transmissive film for a gray scale mask which satisfies the above requirements is selected and controlled in consideration of adjustment of film composition, manufacturing conditions, manufacturing apparatus, etc., in addition to selecting a film material which satisfies the above requirements. And after confirming that the above requirements are satisfied by the control of the film quality (by the above parameters) And get it. Even if the film materials are the same, there are problems in that the above requirements and the above-mentioned requirements are satisfied because of differences in film composition adjustment, manufacturing conditions, selection and control of manufacturing apparatuses, control of film quality (by the above parameters), and the like.

在本發明中，前述灰階光罩用半透光性膜係一種為了在上述狀況下於至少橫跨由超高壓水銀燈放射之i線至g線的波長帶域中半透光性膜之透過率(亦即半透過率)之變動幅度未滿5%且相對於i線、h線、g線之半透光性膜的透過率(亦即半透過率)與波長無關且幾乎相等而進行光學設計並製作的膜。In the present invention, the semi-transmissive film for the gray scale mask is a permeation film for a transmissive film in a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp under the above-described conditions. The rate of change (that is, the half transmittance) is less than 5%, and the transmittance (that is, the half transmittance) of the semi-transmissive film of the i-line, the h-line, and the g-line is almost equal to the wavelength and is almost equal. Optically designed and fabricated film.

在本發明之用於製造FPD裝置之光罩基底及光罩中，較佳者，前述灰階光罩用半透光性膜係一種在橫跨330nm~470nm的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於10%以下之範圍的膜(構成2)。In the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the gray ray mask is a semi-transmissive film which is semi-transparent in a wavelength band spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (that is, the semi-transmission rate) of the film is controlled to a film of 10% or less (constitution 2).

以上述膜而言，例如，可以是MoSix(X>2)膜(例如，MoSi3膜或MoSi4 膜等)。The film may be, for example, a MoSix (X>2) film (for example, a MoSi3 film or a MoSi 4 film, etc.).

另外，在本發明之用於製造FPD裝置之光罩基底及光罩中，較佳者，前述灰階光罩用半透光性膜係一種在橫跨330nm~470nm的波長帶域中將半透光性膜之透過率(亦即半透過率)之變動幅度控制於5%以下之範圍的膜(構成3)。In addition, in the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray-scale reticle is a half-wavelength region spanning from 330 nm to 470 nm. The fluctuation range of the transmittance (that is, the half transmittance) of the light-transmitting film is controlled to a film of a range of 5% or less (constitution 3).

以上述膜而言，例如，可以是CrN膜或MoSi2 膜；另外，也可以是Ta、Ti、W、Mo、Zr等金屬膜、或上述金屬彼此之合金膜或上述金屬與其他金屬之合金膜(以其他金屬而言，可以是Cr、Ni)、包含上述金屬或合金與矽的膜。The film may be, for example, a CrN film or a MoSi 2 film; or a metal film such as Ta, Ti, W, Mo, or Zr, or an alloy film of the above metals or an alloy of the above metal and other metals. The film (in other metals, may be Cr, Ni), a film containing the above metal or alloy and ruthenium.

在本發明之用於製造FPD裝置之光罩基底及光罩 中，至少包含以不同順序而在透光性基板上具有灰階光罩用半透光性膜與遮光性膜的態樣。換句話說，所謂半透光性膜係包含因應個別目的而遮斷曝光波長以形成遮光性膜的態樣。具體而言，例如，如圖3(1)所示，依序於透光性基板10上形成灰階光罩用半透光性膜11與遮光性膜12，並對上述膜施以圖案化製程，而形成灰階光罩用半透光性膜圖案與遮光性膜圖案以構成半透光性膜下置的形式；或者，如圖3(2)所示，依序於透光性基板上形成遮光性膜與灰階光罩用半透光性膜，並對上述膜施以圖案化製程，而形成遮光性膜圖案與灰階光罩用半透光性膜圖案以構成半透光性膜上置的形式。Photomask substrate and reticle for manufacturing FPD device of the present invention The method includes at least a semi-transmissive film for a gray scale mask and a light-shielding film on the light-transmitting substrate in a different order. In other words, the semi-translucent film system includes a state in which the exposure wavelength is blocked to form a light-shielding film for individual purposes. Specifically, for example, as shown in FIG. 3 (1), the semi-transmissive film 11 and the light-shielding film 12 for the gray scale mask are sequentially formed on the light-transmitting substrate 10, and the film is patterned. a process of forming a semi-transmissive film pattern and a light-shielding film pattern for a gray scale mask to form a semi-transmissive film underlying; or, as shown in FIG. 3 (2), sequentially on the light-transmitting substrate Forming a light-shielding film and a semi-transmissive film for a gray scale mask, and applying a patterning process to the film to form a light-shielding film pattern and a semi-transmissive film pattern for a gray scale mask to form a semi-transparent film The form of the upper membrane.

在此，以光半透過膜之材料而言，並不限於由Mo與Si所構成之MoSi系材料，而可以是金屬及矽(MSi、M：Mo、Ni、W、Zr、Ti、Cr等過渡金屬)、氧化氮化之金屬及矽(MSiON)、氧化碳化之金屬及矽(MSiCO)、氧化氮化碳化之金屬及矽(MSiCON)、氧化之金屬及矽(MSiO)、氮化之金屬及矽(MSiN)等；另外，也可以是Ta、Ti、W、Mo、Zr等金屬膜、或上述金屬彼此之合金膜或上述金屬與其他金屬之合金膜(以其他金屬而言，可以是Cr、Ni)、包含上述金屬或合金與矽的材料。Here, the material of the light semi-transmissive film is not limited to a MoSi-based material composed of Mo and Si, and may be metal and germanium (MSi, M: Mo, Ni, W, Zr, Ti, Cr, etc.) Transition metal), oxynitride metal and lanthanum (MSiON), oxidized carbonized metal and lanthanum (MSiCO), oxynitride carbonized metal and lanthanum (MSiCON), oxidized metal and lanthanum (MSiO), nitrided metal And 矽 (MSiN), etc.; or a metal film such as Ta, Ti, W, Mo, or Zr, or an alloy film of the above metals or an alloy film of the above metal and other metals (other metals may be Cr, Ni), a material containing the above metal or alloy and tantalum.

另外，以遮光性膜之材料而言，例如，可以是與光半透過膜之蝕刻特性相異之材料，且在構成半透光性膜之金屬為Mo的情況下，較佳者為鉻、鉻之氧化物、鉻之氮化物、鉻之碳化物、鉻之氟化物、包含上述至少1個之材料；同樣地，在半透光性膜為鉻氮化膜系材料所構成的情況下，較佳者為 鉻、鉻之氧化物、鉻之碳化物、鉻之氟化物、包含上述至少1個之材料。Further, the material of the light-shielding film may be, for example, a material different from the etching property of the light semi-transmissive film, and in the case where the metal constituting the semi-transmissive film is Mo, it is preferably chromium. a chromium oxide, a chromium nitride, a chromium carbide, a chromium fluoride, or a material containing at least one of the above; and similarly, when the semi-transmissive film is a chromium nitride film-based material, Preferred is Chromium, chromium oxide, chromium carbide, chromium fluoride, and at least one of the above materials.

在本發明之用於製造FPD裝置之光罩基底及光罩中，較佳者，前述灰階光罩用半透光性膜係一種必須滿足上述要件並經光學設計而製作之氮化鉻膜系的半透光性膜。(構成4)。In the reticle substrate and the reticle for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray scale reticle is a chromium nitride film which must be optically designed to satisfy the above requirements. A semi-translucent film. (Construction 4).

另外，在本發明之用於製造FPD裝置之光罩基底及光罩中，較佳者，前述灰階光罩用半透光性膜係一種必須滿足上述要件並經光學設計而製作之MoSi系的半透光性膜。(構成5)。Further, in the reticle substrate and the photomask for manufacturing the FPD device of the present invention, preferably, the semi-transmissive film for the gray scale reticle is a MoSi system which must satisfy the above requirements and is optically designed. Semi-translucent film. (Constituent 5).

如此作的理由乃在於上述材料相較於其他材料而言，更容易藉由膜組成之調整、製造條件、製造裝置等之選定及控制、膜質之控制(藉由上述參數進行)等而滿足上述要件的緣故。The reason for this is that the above materials are more easily satisfied by the adjustment of the film composition, the manufacturing conditions, the selection and control of the manufacturing apparatus, the control of the film quality (by the above parameters), etc., compared with other materials. The reason for the requirements.

鉻氮化膜系之灰階光罩用半透光性膜係適於圖3(2)所示之半透光性膜上置形式。另外，MoSi系之灰階光罩用半透光性膜係適於圖3(1)所示之半透光性膜下置形式。The semi-translucent film for a gray scale mask of a chromium nitride film system is suitable for the semi-transmissive film topping form shown in Fig. 3 (2). Further, the semi-translucent film for a gray-scale photomask of the MoSi type is suitable for the semi-transmissive film underlying form shown in Fig. 3 (1).

在本發明之用於製造FPD裝置之光罩基底及光罩中，灰階光罩用半透光性膜之透過率(即半透過率)係選擇15~65%之範圍內之值作為目標值，並藉由膜厚控制而得到目標值之半透光性膜之透過率(即半透過率)。In the reticle base and the reticle for manufacturing the FPD device of the present invention, the transmittance (ie, the semi-transmission rate) of the semi-transmissive film for the gray-scale reticle is selected as a target within a range of 15 to 65%. The value, and the transmittance of the semi-transmissive film (i.e., the half transmittance) of the target value is obtained by the film thickness control.

在本發明中，以超高壓水銀燈而言，雖然以具有例如圖1所示之特性為例作為說明，但是本發明並不限定於此。In the present invention, the ultrahigh pressure mercury lamp is described by taking, for example, the characteristics shown in Fig. 1, but the present invention is not limited thereto.

另外，以透光性基板而言，可以是合成石英、蘇 打石灰(sodalime)玻璃、無鹼玻璃等基板。In addition, in the case of a light-transmitting substrate, it may be synthetic quartz or sul A substrate such as sodalime glass or alkali-free glass.

在本發明中，以用於製造FPD裝置之光罩基底及光罩而言，可以是用於製造LCD(液晶顯示器)、電漿顯示器、有機EL顯示器等FPD裝置的光罩基底及光罩。In the present invention, the reticle substrate and the reticle for manufacturing the FPD device may be a reticle substrate and a reticle for manufacturing an FPD device such as an LCD (Liquid Crystal Display), a plasma display, or an organic EL display.

在此，以LCD製造用光罩而言，包含LCD之製造所需全部的光罩，例如包含用於形成TFT(薄膜電晶體)、特別是TFT通道部或接觸洞部、低溫多晶矽TFT、彩色濾光片、反射板(黑色矩陣)等。以其他顯示元件製造用光罩而言，包含有機EL顯示器、電漿顯示器等製造所需之全部的光罩。Here, in the case of a photomask for LCD manufacturing, all of the photomasks required for the manufacture of the LCD include, for example, formation of a TFT (thin film transistor), particularly a TFT channel portion or a contact hole portion, a low temperature polysilicon TFT, and color. Filter, reflector (black matrix), etc. Other photomasks for manufacturing display elements include all photomasks required for the manufacture of organic EL displays, plasma displays, and the like.

用於製造FPD裝置之光罩係使用本發明用於製造FPD裝置之光罩基底而製造，且至少具有灰階光罩用半透光性膜(構成6)。A reticle for manufacturing an FPD device is manufactured using the reticle substrate of the present invention for manufacturing an FPD device, and has at least a semi-transmissive film for a gray scale reticle (constitution 6).

本發明之光罩基底係於透光性基板上至少具有半透光性膜，其中前述半透光性膜具有調整透過量之功能；前述光罩基底係一種前述半透光性膜經圖案化處理而成為光罩後於製造元件之際藉由包含複數個波長之曝光光線而進行曝光處理之光罩用的光罩基底；其特徵在於：前述半透光性膜係一種在橫跨由超高壓水銀燈放射之至少i線至g線的波長帶域中將半透光性膜之透過率之變動幅度控制於5%以下之範圍的膜(構成6)。The reticle substrate of the present invention has at least a semi-transmissive film on the light-transmitting substrate, wherein the semi-transmissive film has a function of adjusting the amount of transmission; and the reticle substrate is patterned by the semi-transmissive film. a mask base for a photomask that is subjected to exposure processing by exposing a plurality of wavelengths of exposure light after being processed as a mask; characterized in that the semi-transmissive film is a type The film of the range of the transmittance of the semi-transmissive film in the wavelength band of at least the i-line to the g-line of the high-pressure mercury lamp is controlled to a range of 5% or less (constitution 6).

本發明之光罩基底、相對於i線、h線、g線之灰階光罩用半透光性膜的透過率(亦即半透過率)係與波長無關且幾乎相等(例如，半透光性膜之透過率(亦即半透過率)之差 異係未滿5%)，藉此可以多提供適於多色波曝光之光罩基底及光罩。The transmittance of the semi-transmissive film for the gray-scale mask of the photomask base of the present invention with respect to the i-line, the h-line, and the g-line (that is, the semi-transmission rate) is almost independent of the wavelength (for example, semi-transparent). The difference between the transmittance (ie, the half transmittance) of the photo film The difference is less than 5%), whereby the reticle substrate and the reticle suitable for multi-color wave exposure can be provided.

詳細而言，藉由上述構成，即使在半透光性膜之成膜中之製造條件(成膜條件)變動的情況下，而分光透過率(各波長之透過率)變化少，可以提高規格內之光罩基底或光罩的產率。另外，如此控制之膜，相對於隨著製程變動之分光透過率曲線之上下左右方向之偏移，分光透過率(各波長之透過率)少有大變動，而分光透過率(各波長之透過率)之均一性良好。In the above configuration, even when the manufacturing conditions (film formation conditions) in the film formation of the semi-transmissive film fluctuate, the spectral transmittance (transmittance of each wavelength) changes little, and the specification can be improved. The yield of the reticle substrate or reticle. Further, in the film thus controlled, the spectral transmittance (transmittance of each wavelength) is largely changed with respect to the shift in the upper and lower directions of the spectral transmittance curve which varies with the process, and the spectral transmittance (transmission of each wavelength) Rate) The homogeneity is good.

另外，本發明之光罩基底及光罩係適於作為與等倍曝光處理之曝光機對應之光罩基底、光罩。Further, the reticle base and the reticle of the present invention are suitable as a reticle base and a reticle corresponding to the exposure machine of the double exposure processing.

另外，本發明之光罩基底及光罩係適於作為與照明光學系為反射光學式而構成之曝光裝置對應之光罩基底、光罩。Further, the mask base and the mask of the present invention are suitable as a mask base and a mask corresponding to an exposure apparatus in which the illumination optical system is a reflective optical type.

另外，本發明之光罩基底及光罩係適於作為330nm×450nm矩形以上之大型光罩、及與此光罩對應之大型光罩基底。以此大型光罩之用途而言，可以是顯示器元件製造用光罩，例如FPD裝置製造用光罩等。Further, the mask base and the mask of the present invention are suitable as a large-sized mask having a rectangular shape of 330 nm × 450 nm or more, and a large-sized mask base corresponding to the mask. The use of the large-sized photomask may be a photomask for manufacturing a display element, for example, a photomask for manufacturing an FPD device.

另外，本發明適於作為與灰階光罩對應之光罩基底。Additionally, the present invention is suitable as a reticle substrate corresponding to a gray scale reticle.

本發明之光罩係使用上述本發明之光罩基底而製造，至少具有半透光性膜圖案(構成8)。The photomask of the present invention is produced by using the above-described photomask substrate of the present invention, and has at least a semi-transmissive film pattern (construction 8).

關於本發明之光罩基底及光罩(構成6及構成8)的其他事項，係與上述本發明之光罩基底及光罩(構成1~5及 構成7)所說明之事項相同。Other matters relating to the reticle base and the reticle (the constituting 6 and the struct 8) of the present invention are the reticle base and the reticle of the present invention (constituting 1 to 5 and The items described in Structure 7) are the same.

1‧‧‧遮光部1‧‧‧Lighting Department

2‧‧‧透過部2‧‧‧Transmission Department

3‧‧‧灰階部3‧‧‧ Grayscale Department

3a‧‧‧微細遮光圖案3a‧‧‧Micro shading pattern

3b‧‧‧微細透過部3b‧‧‧Micro-transmission department

3a’‧‧‧半透光性膜3a'‧‧‧ semi-transmissive film

10‧‧‧透光性基板10‧‧‧Transmissive substrate

11‧‧‧半透光性膜11‧‧‧ Semi-transmissive film

12‧‧‧遮光性膜12‧‧‧ opaque film

[圖1]作為曝光光源之超高壓水銀燈之分光分布的示意圖。[Fig. 1] Schematic diagram of the spectral distribution of an ultrahigh pressure mercury lamp as an exposure light source.

[圖2]實施例1中作成之半透光性膜之分光透過率的示意圖。Fig. 2 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 1.

[圖3](1)、(2)用於說明光罩之態樣的圖。3 (1) and (2) are views for explaining a state of a photomask.

[圖4]實施例2中作成之半透光性膜之分光透過率的示意圖。Fig. 4 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 2.

[圖5]實施例2中作成之其它半透光性膜之分光透過率的示意圖。Fig. 5 is a view showing the spectral transmittance of the other semi-transmissive film produced in Example 2.

[圖6]實施例2中作成之其它半透光性膜之分光透過率的示意圖。Fig. 6 is a view showing the spectral transmittance of the other semi-transmissive film produced in Example 2.

[圖7](1)、(2)用於說明半透光性膜之分光透過率線之舉動的圖。Fig. 7 (1) and (2) are views for explaining the behavior of the spectral transmittance line of the semi-translucent film.

[圖8](1)、(2)用於說明半透光性膜之分光透過率線之舉動的圖。8] (1) and (2) are views for explaining the behavior of the spectral transmittance line of the semi-translucent film.

[圖9](1)、(2)用於說明具有半透光性膜之灰階光罩說明圖；(1)為部分平面圖；(2)為部份剖面圖。[Fig. 9] (1) and (2) are explanatory views for explaining a gray scale mask having a semi-translucent film; (1) is a partial plan view; (2) is a partial sectional view.

[圖10](1)、(2)用於說明具有解析度極限以下之微細遮光圖案之灰階光罩的圖；(1)為部分平面圖；(2)為部份剖面圖。[Fig. 10] (1) and (2) are diagrams for explaining a gray scale mask having a fine light-shielding pattern having a resolution limit or less; (1) is a partial plan view; (2) is a partial cross-sectional view.

[圖11]實施例4中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 11 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 4 across the wavelength band from the i-line to the g-line.

[圖12]實施例4中作成之半透光性膜位於波長介於 200nm~800nm間之波長帶域之分光透過率的示意圖。[Fig. 12] The semi-transmissive film formed in Example 4 is located at a wavelength Schematic diagram of the spectral transmittance of the wavelength band between 200 nm and 800 nm.

[圖13]實施例5中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 13 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 5 across the wavelength band from the i-line to the g-line.

[圖14]實施例5中作成之半透光性膜位於波長介於200nm~800nm間之波長帶域之分光透過率的示意圖。Fig. 14 is a view showing the spectral transmittance of a semi-transmissive film produced in Example 5 in a wavelength band between 200 nm and 800 nm.

[圖15]實施例6中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 15 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 6 across the wavelength band from the i-line to the g-line.

[圖16]實施例6中作成之半透光性膜位於波長介於200nm~800nm間之波長帶域之分光透過率的示意圖。Fig. 16 is a view showing the spectral transmittance of a semi-transmissive film formed in Example 6 in a wavelength band having a wavelength between 200 nm and 800 nm.

[圖17]實施例7中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 17 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 7 across the wavelength band from the i-line to the g-line.

[圖18]實施例7中作成之半透光性膜位於波長介於200nm~800nm間之波長帶域之分光透過率的示意圖。Fig. 18 is a view showing the spectral transmittance of a semi-transmissive film produced in Example 7 in a wavelength band between 200 nm and 800 nm.

[圖19]實施例8中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 19 is a view showing the spectral transmittance of the semi-transmissive film formed in Example 8 across the wavelength band from the i-line to the g-line.

[圖20]實施例8中作成之半透光性膜位於波長介於200nm~800nm間之波長帶域之分光透過率的示意圖。20 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 8 in a wavelength band between 200 nm and 800 nm.

[圖21]實施例9中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 21 is a view showing the spectral transmittance of a semi-transmissive film formed in Example 9 across a wavelength band from the i-line to the g-line.

[圖22]實施例9中作成之半透光性膜位於波長介於200nm~800nm間之波長帶域之分光透過率的示意圖。Fig. 22 is a schematic view showing the spectral transmittance of a semi-transmissive film produced in Example 9 in a wavelength band between 200 nm and 800 nm.

[圖23]比較例2中作成之半透光性膜橫跨i線至g線之波長帶域之分光透過率的示意圖。Fig. 23 is a view showing the spectral transmittance of the semi-transmissive film produced in Comparative Example 2 across the wavelength band from the i-line to the g-line.

[圖24]比較例2中作成之半透光性膜位於波長介於 200nm~800nm間之波長帶域之分光透過率的示意圖。[Fig. 24] The semi-transmissive film produced in Comparative Example 2 is located at a wavelength Schematic diagram of the spectral transmittance of the wavelength band between 200 nm and 800 nm.

以下，基於實施例而進一步詳細說明本發明。Hereinafter, the present invention will be described in further detail based on examples.

(實施例1)(Example 1)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Cr靶材，以Ar與N2 氣體作為濺鍍氣體而階段性地變化CrN半透光性膜為100埃(試料1)、80埃(試料2)、50埃(試料3)、30埃(試料4)以製作複數個試料。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, the Cr target was used to change the CrN semi-transmissive film to 100 angstroms (sample 1), 80 angstroms (sample 2), and 50 angstroms (sample 3) using Ar and N 2 gas as a sputtering gas. ), 30 angstroms (sample 4) to make a plurality of samples.

其中，試料2之分光透過率線如圖2之A所示；試料3之分光透過率線如圖2之B所示。D係顯示QZ之分光透過率。分光透過率係藉由分光光度計(日立製作所社製：U-4100)而測定。The split light transmittance line of the sample 2 is as shown in FIG. 2A; the split light transmittance line of the sample 3 is as shown in FIG. The D system shows the spectral transmittance of QZ. The spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

關於圖2所示之試料2之分光透過率線A及試料3之分光透過率線B，在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度係在未滿5%之範圍內。The split light transmittance line A of the sample 2 shown in FIG. 2 and the split light transmittance line B of the sample 3 are semi-translucent film in a wavelength band spanning at least the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The variation in transmittance (ie, semi-transmission rate) is within 5%.

另外，關於圖2所示之試料2之分光透過率線A及試料3之分光透過率線B，即使在橫跨波長330nm~470nm之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度也在未滿5%之範圍內。Further, regarding the spectral transmittance line A of the sample 2 shown in FIG. 2 and the spectral transmittance line B of the sample 3, the transmittance of the semi-transmissive film is in the wavelength band spanning the wavelength of 330 nm to 470 nm (ie, The half-transmission rate is also within the range of less than 5%.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率 (即半透過率)之變動幅度之範圍內。When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner (the average position is 9 positions), the transmittance of the semi-transmissive film is known. Within the range of the range of variation (ie, semi-transmission rate).

而且可以確認，在CrN半透光性膜之膜厚介於20~250埃之範圍內，設定任意之膜厚所製作之任一膜皆位於上述半透光性膜之透過率(即半透過率)之變動幅度之範圍內。Further, it can be confirmed that the film thickness of the CrN semi-transmissive film is in the range of 20 to 250 angstroms, and any film produced by setting an arbitrary film thickness is located at the transmittance of the semi-transmissive film (that is, the half transmittance). Within the range of the extent of the change.

(比較例1)(Comparative Example 1)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Cr靶材，以Ar與O2氣體作為濺鍍氣體而階段性地變化CrO半透光性膜為100埃(試料1’)、250埃(試料2’)、400埃(試料3’)、500埃(試料4’)以製作複數個試料。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, the Cr target was used to change the CrO semi-transmissive film to 100 angstroms (sample 1'), 250 angstroms (sample 2'), and 400 angstroms by using Ar and O 2 gas as a sputtering gas. 3'), 500 angstroms (sample 4') to make a plurality of samples.

其中，試料3’之分光透過率線如圖2之C所示。Here, the spectral transmittance line of the sample 3' is as shown in Fig. 2C.

關於圖2所示之試料3’之分光透過率線C，在至少橫跨由超高壓水銀燈放射之i線至g線的波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度為6%以上。Regarding the spectral transmittance line C of the sample 3' shown in Fig. 2, the transmittance of the semi-transmissive film (i.e., the half transmittance) is at least across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The change range is 6% or more.

另外，關於第2圖所示之試料3’之分光透過率線C，在橫跨波長330nm~470nm之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度約12%以上。Further, regarding the spectral transmittance line C of the sample 3' shown in Fig. 2, the transmittance of the semi-transmissive film (i.e., the half transmittance) is varied in the wavelength band spanning the wavelength of 330 nm to 470 nm. 12% or more.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，在很少的製程變動下，分光透過率線C向上下左右偏移，因此半透光性膜之透過率(即半透過率)之變動幅度增加2~3%左右。When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner (the average position is 9 positions), it can be known that the light transmittance transmission line C is shifted upward and downward by a small number of process variations, so that the translucency is semi-transparent. The variation in the transmittance (ie, the half transmittance) of the film is increased by about 2 to 3%.

而且可以確認，在CrO半透光性膜之膜厚介於100~500埃之範圍內，設定任意之膜厚所製作之任一膜皆位於 實施例1之半透光性膜之透過率(即半透過率)之變動幅度之範圍外。Further, it was confirmed that any film produced by setting an arbitrary film thickness is located in a range in which the film thickness of the CrO semi-transmissive film is in the range of 100 to 500 Å. The range of variation of the transmittance (i.e., the half transmittance) of the semi-transmissive film of Example 1 was outside the range.

(基底及光罩之製作)(Production of substrate and mask)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而形成Cr系遮光膜(製作光罩基底)，並進行此Cr系遮光膜之圖案化製程。在此，Cr系遮光膜之成膜係使用Cr靶材，並以Ar與CH4 氣體為濺鍍氣體而形成620~570埃CrC膜。A large-sized glass substrate (synthesized quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a Cr-based light-shielding film (making a photomask base) using a large-line sputtering apparatus, and a patterning process of the Cr-based light-shielding film was performed. Here, the Cr-based light-shielding film is formed by using a Cr target, and an Ar and CH 4 gas is used as a sputtering gas to form a 620-570 angstrom CrC film.

接著，灰階光罩用半透光性膜係與上述實施例1及比較例1同樣地成膜(製作光罩基底)，並進行此灰階光罩用半透光性膜之圖案化。Next, the gray scale mask was formed into a film (making a mask base) in the same manner as in the above-described Example 1 and Comparative Example 1, and the semi-transmissive film for the gray scale mask was patterned.

如上所述，製作圖3(2)所示之半透光性膜上置形式之FPD用大型光罩。As described above, a large-sized photomask for FPD having a semi-transmissive film topping type as shown in Fig. 3 (2) was produced.

結果，以灰階光罩用半透光性膜而言，確認在使用實施例1之膜的情況下較使用比較例1之膜的情況更有益於光罩之高品質化並提升產率等。As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the use of the film of Example 1 is more advantageous for the quality of the mask and the productivity, etc., than when the film of Comparative Example 1 is used. .

(實施例2)(Example 2)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Mo：Si=20：80(原子%比)之靶材，以Ar與He氣體作為濺鍍氣體而階段性地變化由Mo與矽組成之灰階光罩用半透光性膜(MoSi4 )為100埃(試料5)、50埃(試6)、30埃(試料7)以製作複數個試料。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a semi-transparent color of a gray scale mask composed of Mo and yttrium is changed stepwise using a target of Mo:Si=20:80 (atomic% ratio) using Ar and He gases as sputtering gases. The film (MoSi 4 ) was 100 angstroms (sample 5), 50 angstroms (test 6), and 30 angstroms (sample 7) to prepare a plurality of samples.

試料5之分光透過率線如圖4所示；試料6之分光透 過率線如圖5所示；試料7之分光透過率線如圖6所示。分光透過率係藉由分光光度計(日立製作所社製：U-4100)而測定。The light transmittance line of sample 5 is shown in Figure 4; The over-rate line is shown in Figure 5; the split-light transmission line of sample 7 is shown in Figure 6. The spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料5在未滿3.9%之範圍內；試料6在未滿4.6%之範圍內；試料7在未滿3.1%之範圍內。The variation range of the transmittance (ie, the half transmittance) of the semi-transmissive film is at least in the range of the wavelength range from the i-line to the g-line radiated by the ultra-high pressure mercury lamp, as follows: Sample 5 is in the range of less than 3.9%. Inside; sample 6 is in the range of less than 4.6%; sample 7 is in the range of less than 3.1%.

另外，在橫跨波長330nm~470nm之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料5在未滿6.0%之範圍內；試料6在未滿8.5%之範圍內；試料7在未滿5.8%之範圍內。Further, in the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film (i.e., the half transmittance) is as follows: sample 5 is in the range of less than 6.0%; sample 6 is not Within the range of 8.5%; sample 7 is within the range of 5.8%.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且確認，在MoSi4 膜之膜厚介於20~250埃之範圍內，設定任意之膜厚所製作之膜係任一半透光性膜之透過率(即半透過率)之變動幅度位於試料6以下之範圍內。Further, it has been confirmed that the film thickness of the MoSi 4 film is in the range of 20 to 250 angstroms, and the transmittance of the semi-transmissive film (that is, the half transmittance) of the film system formed by setting the film thickness of any film thickness is located in the sample 6 Within the scope below.

(實施例3)(Example 3)

相較於上述之實施例2而言，除了Mo：Si=1：2(原子%比)不同以外，其餘與實施例2相同，而進行複數個透過率之灰階光罩用半透光性膜之成膜。Compared with the second embodiment described above, the semi-transparency of the gray scale mask for a plurality of transmittances is the same as that of the second embodiment except that Mo:Si=1:2 (atomic% ratio) is different. Film formation.

結果可以得知，在MoSi2 膜之膜厚為15~200埃之範圍內，設定任意之膜厚所製作之膜係在橫跨i線至g線之波長帶域中任一半透光性膜之透過率(即半透過率)之變動幅度小於4%。As a result, it was found that the film formed by setting an arbitrary film thickness in the range of the film thickness of the MoSi 2 film of 15 to 200 angstroms is one of the semi-transmissive films in the wavelength band across the i-line to the g-line. The transmittance (ie, the half transmittance) varies by less than 4%.

由實施例2及3之結果可以知道，將橫軸之刻度弄成相同而比較時，相對於MoSi4 半透光性膜而言，由於MoSi2 半透光性膜在較包含i線~g線之波長帶域更廣的波長帶域中係分光透過率線之傾斜更平坦的緣故，所以較好。As can be seen from the results of Examples 2 and 3, when the scales on the horizontal axis are the same, the MoSi 2 semi-transmissive film is more included in the i-line to g than the MoSi 4 semi-translucent film. It is preferable that the wavelength band of the line has a wider slope in the wavelength band of the light-transmitting transmittance line.

(基底及光罩之製作)(Production of substrate and mask)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而依序形成MoSi系之灰階光罩用半透光性膜、Cr系遮光膜，以製作FPD用大型光罩基底。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) is used to form a semi-transmissive film for a gray-scale mask of a MoSi system and a Cr-based light-shielding film by using a large-scale on-line sputtering apparatus. The FPD uses a large reticle base.

在此，MoSi系之灰階光罩用半透光性膜之成膜係與上述實施例2或3相同。Here, the film formation system of the semi-translucent film for the gray scale mask of the MoSi system is the same as that of the above-described second or third embodiment.

另外，Cr系遮光膜之成膜乃是在大型線上濺鍍裝置內連續配置之3個空間(濺鍍室)個別配置Cr靶材而連續成膜；首先，以Ar與N2 氣體為濺鍍氣體而形成CrN膜150埃；接著，以Ar與CH4 氣體為濺鍍氣體而形成CrC膜650埃；接著，以Ar與NO氣體為濺鍍氣體而形成CrON膜250埃。In addition, the film formation of the Cr-based light-shielding film is performed by separately arranging a Cr target in three spaces (sputtering chambers) continuously arranged in the large-scale on-line sputtering apparatus, and firstly forming a film by Ar and N 2 gas. A CrN film of 150 Å was formed by a gas; then, a CrC film of 650 Å was formed by using Ar and CH 4 gas as a sputtering gas; and then a CrON film of 250 Å was formed by using Ar and NO gas as a sputtering gas.

在進行Cr系遮光膜之圖案化製程後，進行MoSi系灰階光罩用半透光性膜之圖案化製程，以製作如圖3(1)所示之半透光性膜下置形式之FPD用大型光罩。After the patterning process of the Cr-based light-shielding film is performed, a patterning process of the semi-transmissive film for the MoSi-based gray scale mask is performed to produce a semi-transmissive film underlying form as shown in FIG. 3 (1). Large reticle for FPD.

結果，以灰階光罩用半透光性膜而言，確認在使用實施例2、3之膜的情況下較使用比較例1之膜的情況更有益於光罩之高品質化並提升產率等。As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the film of the examples 2 and 3 was used more preferably than the film of the comparative example 1, and the quality of the mask was improved and the yield was improved. Rate and so on.

(實施例4)(Example 4)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸 850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Ta靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由Ta所組成之灰階光罩用半透光性膜，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-4)、約40%(試料T-5)、約20%(試料T-6)。For large glass substrates (synthetic quartz (QZ) 10mm thick, size 850 mm × 1200 mm) A large-line on-line sputtering apparatus was used to form a film of a semi-transparent film for a gray scale mask. Specifically, a Ta target material is used, and a semi-transmissive film for a gray scale mask composed of Ta is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples, wherein The transmittance (i.e., the half transmittance) of the semi-transmissive film formed by the film at least across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp is about 60% (sample T-4) ), about 40% (sample T-5), about 20% (sample T-6).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖11所示。The spectral transmittance line of each of the above samples is shown in Fig. 11 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度如下：試料T-4在未滿0.4%之範圍內；試料T-5在未滿0.2%之範圍內；試料T-6在未滿0.4%之範圍內，幾乎呈現平坦狀態。The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-4 is in the range of less than 0.4%. The sample T-5 was in the range of less than 0.2%; the sample T-6 was almost flat in the range of less than 0.4%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖12所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度位於未滿2.0%之範圍內。In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 2.0%.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且可以確認，在成膜後之半透光性膜(Ta)之 透過率(即半透過率)係介於約20%~約60%膜厚之範圍內，設定任意之膜厚所製作之膜係任一半透光性膜之透過率(即半透過率)之變動幅度皆位於試料T-4之範圍內。Moreover, it can be confirmed that the semi-transmissive film (Ta) after film formation The transmittance (ie, the half transmittance) is in the range of about 20% to about 60% of the film thickness, and the transmittance (ie, the half transmittance) of any semi-transmissive film of the film system produced by setting the film thickness is set. The range of variation is within the range of sample T-4.

(實施例5)(Example 5)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Ti靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由Ti所組成之灰階光罩用半透光性膜(Ti)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-8)、約40%(試料T-9)、約20%(試料T-10)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Ti target is used, and a semi-transmissive film (Ti) for a gray scale mask composed of Ti is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-8), about 40% (sample T-9), about 20% (sample T-10).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖13所示。The spectral transmittance line of each of the above samples is shown in Fig. 13 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料T-8在未滿1.7%之範圍內；試料T-9在未滿1.5%之範圍內；試料T-10在未滿0.3%之範圍內，大體上平坦。The variation in transmittance (ie, semi-transmission) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: sample T-8 is less than 1.7%. Within the range; sample T-9 is in the range of less than 1.5%; sample T-10 is substantially flat within the range of less than 0.3%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖14所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係分別 在未滿5.0%之範圍內。但是，如圖14所示，在短波長側透過率上昇的情況下，隨著透過率變高(膜厚變薄)而透過率上昇之波峰向長波長測移動，位於橫跨i線至g線之波長帶域之半透光性膜之透過率(即半透過率)之變動幅度有變大的傾向。In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittances of the semi-transmissive films of the above samples (ie, the half transmittance) are respectively varied. Within the range of less than 5.0%. However, as shown in FIG. 14 , when the transmittance increases on the short-wavelength side, the peak in which the transmittance increases as the transmittance increases (the film thickness becomes thinner) moves toward the long wavelength, and is located across the i-line to the g. The variation range of the transmittance (i.e., the half transmittance) of the semi-transmissive film in the wavelength band of the line tends to increase.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且可以確認，在成膜後之半透光性膜(Ti)之透過率(即半透過率)係介於約20%~約60%膜厚之範圍內，設定任意之膜厚所製作之膜係任一上述半透光性膜之透過率(即半透過率)之變動幅度皆位於上述各試料之範圍內。Further, it was confirmed that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Ti) after film formation is in the range of about 20% to about 60% of the film thickness, and the film thickness is set to any thickness. The range of variation of the transmittance (i.e., the half transmittance) of any of the above-mentioned semi-transmissive films is within the range of each of the above samples.

(實施例6)(Example 6)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用W靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由W所組成之灰階光罩用半透光性膜(W)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-11)、約40%(試料T-12)、約20%(試料T-13)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a W-target is used, and a semi-transmissive film (W) for a gray scale mask composed of W is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-11), about 40% (sample T-12), about 20% (sample T-13).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖15所示。The spectral transmittance line of each of the above samples is shown in Fig. 15 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料試料T-11在未滿1.8%之範圍內；試料T-12在未滿1.5%之範圍內；試料T-10在未滿1.1%之範圍內，大體上平坦。The variation in the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-11 is less than 1.8%. Within the range of the sample T-12 is less than 1.5%; the sample T-10 is substantially flat within the range of less than 1.1%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖16所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係在未滿4.0%之範圍內，但是，如圖16所示，即使與實施例4、5相比，隨著向長波長側移動而傾斜變大若干。In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 4.0%, but as shown in FIG. It is shown that the inclination becomes larger as moving to the longer wavelength side than in the fourth and fifth embodiments.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且可以確認，在成膜後之半透光性膜(W)之透過率(即半透過率)變成約20%~約60%之膜厚的範圍內，設定任意之膜厚所製作之膜係任一上述半透光性膜之透過率(即半透過率)之變動幅度皆位於上述各試料之範圍內。Further, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of the semi-transmissive film (W) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(實施例7)(Example 7)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Mo靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由Mo所組成之灰階光罩用半透光性膜(Mo)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜 後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-14)、約40%(試料T-15)、約20%(試料T-16)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Mo target is used, and a semi-transmissive film (Mo) for a gray scale mask composed of Mo is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. Forming the film into a film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp The transmittance (i.e., semi-transmission ratio) of the latter semi-transmissive film was about 60% (sample T-14), about 40% (sample T-15), and about 20% (sample T-16).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖17所示。The spectral transmittance line of each of the above samples is shown in Fig. 17 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料試料T-14在未滿2.1%之範圍內；試料T-15在未滿2.4%之範圍內；試料T-16在未滿1.8%之範圍內，大體上平坦。In the wavelength band across the i-line to the g-line radiated by the ultra-high pressure mercury lamp, the transmittances of the semi-transmissive film (ie, the semi-transmission rate) are as follows: sample sample T-14 is less than 2.1%. Within the range of the sample; the sample T-15 is in the range of less than 2.4%; the sample T-16 is substantially flat within the range of less than 1.8%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖18所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係在未滿5.0%之範圍內，但是，如圖18所示，即使與實施例6相比，隨著向長波長側移動而傾斜變大若干。In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (that is, the half transmittance) is within a range of less than 5.0%, but as shown in FIG. It is shown that the inclination becomes larger as it moves toward the longer wavelength side than in the sixth embodiment.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，任一上述半透光性膜之透過率(即半透過率)之變動幅度位於各範圍內。When the inner faces of a plurality of (between the substrates: 100) are inspected in the same manner, it is known that the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within each range. .

而且可以得知，在成膜後之半透光性膜(Mo)之透過率(即半透過率)介於約20%~約60%之膜厚範圍內，設定任意之膜厚而製作之膜中任一之半透光性膜之透過率(即半透過率)之變動幅度係落在上述各試料之範圍內。Further, it can be understood that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Mo) after film formation is in the range of about 20% to about 60%, and an arbitrary film thickness is set and produced. The variation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films in the film falls within the range of each of the above samples.

(實施例8)(Example 8)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Ti：W=1：1(原子%比)之靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由Ti與W所組成之灰階光罩用半透光性膜(TiW)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-23)、約40%(試料T-24)、約20%(試料T-25)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a target of Ti:W=1:1 (atomic% ratio) is used, and Ar gas is used as a sputtering gas to form a gray-scale mask composed of Ti and W, respectively, under a film thickness. a photo film (TiW) for producing a plurality of samples, wherein the film is formed to penetrate the semi-transmissive film after forming a film in at least a wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The rate (i.e., the half transmittance) was about 60% (sample T-23), about 40% (sample T-24), and about 20% (sample T-25).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖19所示。The spectral transmittance line of each of the above samples is shown in Fig. 19 in the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料試料T-23在未滿0.26%之範圍內；試料T-24在未滿1.47%之範圍內；試料T-25在未滿0.66%之範圍內，幾乎平坦。The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is as follows: the sample T-23 is less than 0.26%. Within the range of the sample; the sample T-24 is in the range of less than 1.47%; the sample T-25 is almost flat within the range of less than 0.66%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖20所示。Further, the spectral transmittance line of each of the above samples in the wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係分別在未滿3.0%之範圍內。但是，如圖20所示，在短波長側透過率上昇的情況下，隨著透過率變高(膜厚變薄)而透過率上昇之波峰向長波長測移動，位於橫跨i線至g線之波長帶域之半透 光性膜之透過率(即半透過率)之變動幅度有變大的傾向。In the wavelength band spanning the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 3.0%. However, as shown in FIG. 20, when the transmittance on the short-wavelength side increases, as the transmittance increases (the film thickness becomes thinner), the peak of the transmittance increases toward the long-wavelength measurement, and is located across the i-line to the g. Semi-transparent wavelength band The variation range of the transmittance (that is, the half transmittance) of the photo film tends to increase.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且可以確認，在成膜後之半透光性膜(TiW)之透過率(即半透過率)變成約20%~約60%之膜厚的範圍內，設定任意之膜厚所製作之膜係任一上述半透光性膜之透過率(即半透過率)之變動幅度皆位於上述各試料之範圍內。In addition, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of a semi-transmissive film (TiW) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(實施例9)(Example 9)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用W：Si=1：2(原子%比)之靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由W與Si所組成之灰階光罩用半透光性膜(WSi)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-20)、約40%(試料T-21)、約20%(試料T-22)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a target of W:Si=1:2 (atomic% ratio) is used, and Ar gas is used as a sputtering gas, and a gray scale mask composed of W and Si is formed to be semipermeable at a film thickness. a photo film (WSi) for producing a plurality of samples, wherein the film is formed to penetrate the semi-transmissive film after forming a film in at least a wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp. The rate (i.e., the half transmittance) was about 60% (sample T-20), about 40% (sample T-21), and about 20% (sample T-22).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖21所示。The spectral transmittance line of each of the above samples is shown in Fig. 21 across the wavelength band from the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如 下：試料試料T-20在未滿2.6%之範圍內；試料T-21在未滿2.8%之範圍內；試料T-22在未滿2.5%之範圍內，大體上平坦。In the wavelength band across the i-line to the g-line radiated by the ultra-high pressure mercury lamp, the transmittance of the semi-transmissive film (ie, the semi-transmission rate) varies as follows. Bottom: The sample T-20 is in the range of less than 2.6%; the sample T-21 is in the range of less than 2.8%; the sample T-22 is substantially flat in the range of less than 2.5%.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖22所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係分別在未滿5.0%之範圍內。但是，如圖22所示，隨著向長波長測移動而傾斜變大若干。In the wavelength band across the wavelength of 330 nm to 470 nm, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is within a range of less than 5.0%. However, as shown in FIG. 22, the inclination becomes larger as moving toward the long wavelength measurement.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，皆在上述半透光性膜之透過率(即半透過率)之變動幅度之各範圍內。When inspecting the inner faces of a plurality of (inter-substrates: 100) in the same manner, it is known that all of them are within the range of the variation range of the transmittance (that is, the half transmittance) of the semi-transmissive film. .

而且可以確認，在成膜後之半透光性膜(WSi)之透過率(即半透過率)變成約20%~約60%之膜厚的範圍內，設定任意之膜厚所製作之膜係任一上述半透光性膜之透過率(即半透過率)之變動幅度皆位於上述各試料之範圍內。Further, it was confirmed that the film produced by setting an arbitrary film thickness within a range of a film thickness of the semi-transmissive film (WSi) after film formation (that is, a semi-transmissivity) of about 20% to about 60% The fluctuation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films is within the range of each of the above samples.

(比較例2)(Comparative Example 2)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而進行灰階光罩用半透光性膜之成膜。具體而言，使用Si靶材，以Ar氣體作為濺鍍氣體而在一膜厚下分別形成由Si所組成之灰階光罩用半透光性膜(Si)，以製作複數個試料，其中使得所成之膜在至少橫跨由超高壓水銀燈放射之i線至g線之波長帶域中成膜後之半透光性膜之透過率(即半透過率)分別為約60%(試料T-17)、約40%(試料T-18)、約20%(試料T-19)。A large-sized glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) was used to form a film of a semi-transmissive film for a gray scale mask using a large-scale on-line sputtering apparatus. Specifically, a Si target is used, and a semi-transmissive film (Si) for a gray scale mask composed of Si is formed under a film thickness using Ar gas as a sputtering gas to prepare a plurality of samples. The transmittance (ie, the half transmittance) of the semi-transmissive film formed by forming the film at least across the wavelength band from the i-line to the g-line radiated by the ultra-high pressure mercury lamp is about 60% (sample) T-17), about 40% (sample T-18), about 20% (sample T-19).

關於上述各試料，藉由分光光度計(日立製作所社製：U-4100)而測定分光透過率。With respect to each of the above samples, the spectral transmittance was measured by a spectrophotometer (manufactured by Hitachi, Ltd.: U-4100).

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，上述各試料之分光透過率線如圖23所示。The spectral transmittance line of each of the above samples is shown in Fig. 23 in the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp.

在橫跨由超高壓水銀燈放射之i線至g線之波長帶域中，半透光性膜之透過率(即半透過率)之變動幅度分別如下：試料T-17：13.0%、試料T-18：13.4%、試料T-19：9.7%；即使與比較例1相比，半透光性膜之透過率(即半透過率)之變動幅度也大。In the wavelength band across the i-line to the g-line radiated by the ultrahigh pressure mercury lamp, the transmittances of the translucent film (ie, the half transmittance) are as follows: sample T-17: 13.0%, sample T -18: 13.4%, sample T-19: 9.7%; even when compared with Comparative Example 1, the transmittance of the semi-transmissive film (i.e., the half transmittance) was large.

另外，位在橫跨波長200nm~800nm之波長帶域中之上述各試料之分光透過率線如圖24所示。Further, the spectral transmittance line of each of the above-mentioned samples located in a wavelength band spanning the wavelength of 200 nm to 800 nm is as shown in FIG.

在橫跨波長330nm~470nm之波長帶域中，上述各試料之半透光性膜之透過率(即半透過率)之變動幅度係分別約20%左右，即使與比較例1相比，半透光性膜之透過率(即半透過率)之變動幅度算大。In the wavelength range of 330 nm to 470 nm across the wavelength range, the transmittance of the semi-transmissive film of each of the above samples (i.e., the half transmittance) is about 20%, respectively, even if compared with Comparative Example 1, The transmittance of the light transmissive film (i.e., the half transmittance) is large.

同樣地檢查複數枚(基板間：100枚)之內面(均等9個位置)的時候可以知道，在很少的製程變動下，圖23所示之分光透過率線向上下左右偏移，因此半透光性膜之透過率(即半透過率)之變動幅度增加3~5%左右。Similarly, when examining the inner faces of a plurality of (between the two substrates) (equal to nine positions), it can be known that the spectral transmittance lines shown in FIG. 23 are shifted upward and downward, with little process variation, so The variation of the transmittance (ie, the half transmittance) of the semi-transmissive film is increased by about 3 to 5%.

而且可以得知，在成膜後之半透光性膜(Si)之透過率(即半透過率)介於約20%~約60%之膜厚範圍內，設定任意之膜厚而製作之膜中任一之半透光性膜之透過率(即半透過率)之變動幅度係落在實施例1~9之半透光性膜之透過率(即半透過率)之變動幅度之範圍外。Further, it can be seen that the transmittance (i.e., the half transmittance) of the semi-transmissive film (Si) after film formation is in the range of about 20% to about 60%, and an arbitrary film thickness is set and produced. The variation range of the transmittance (i.e., the half transmittance) of any of the semi-transmissive films in the film falls within the range of the variation of the transmittance (i.e., the half transmittance) of the semi-transmissive film of Examples 1 to 9. outer.

(基底及光罩之製作)(Production of substrate and mask)

於大型玻璃基板(合成石英(QZ)10mm厚、尺寸850mm×1200mm)上使用大型線上濺鍍裝置而依序形成灰階光罩用半透光性膜、Cr系遮光膜，以製作FPD用大型光罩基底。A large-scale glass substrate (synthetic quartz (QZ) 10 mm thick, size 850 mm × 1200 mm) is used to form a semi-transmissive film for a gray scale mask and a Cr-based light-shielding film by using a large-scale on-line sputtering apparatus to produce a large FPD. Photomask base.

在此，灰階光罩用半透光性膜之成膜係與上述實施例4~9之各條件相同。Here, the film formation system of the semi-transmissive film for the gray scale mask is the same as the conditions of the above-described Examples 4 to 9.

另外，Cr系遮光膜之成膜乃是在大型線上濺鍍裝置內連續配置之3個空間(濺鍍室)個別配置Cr靶材而連續成膜；首先，以Ar與N2 氣體為濺鍍氣體而形成CrN膜150埃；接著，以Ar與CH4 氣體為濺鍍氣體而形成CrC膜650埃；接著，以Ar與NO氣體為濺鍍氣體而形成CrON膜250埃。In addition, the film formation of the Cr-based light-shielding film is performed by separately arranging a Cr target in three spaces (sputtering chambers) continuously arranged in the large-scale on-line sputtering apparatus, and firstly forming a film by Ar and N 2 gas. A CrN film of 150 Å was formed by a gas; then, a CrC film of 650 Å was formed by using Ar and CH 4 gas as a sputtering gas; and then a CrON film of 250 Å was formed by using Ar and NO gas as a sputtering gas.

在進行Cr系遮光膜之圖案化製程後，進行灰階光罩用半透光性膜之圖案化製程，以製作如圖3(1)所示之半透光性膜下置形式之FPD用大型光罩。After the patterning process of the Cr-based light-shielding film is performed, a patterning process of the semi-transmissive film for the gray scale mask is performed to fabricate the FPD for the semi-transmissive film under the form shown in FIG. 3 (1). Large reticle.

結果，以灰階光罩用半透光性膜而言，確認在使用實施例4~9之膜的情況下較使用比較例1~2之膜的情況更有益於光罩之高品質化並提升產率等。As a result, in the case of using the semi-transmissive film for the gray scale mask, it was confirmed that the use of the films of Examples 4 to 9 is more advantageous for the quality of the mask than when the films of Comparative Examples 1 to 2 are used. Improve productivity and so on.

以上，雖然揭露較佳實施例而說明本發明，但是本發明並不限定於上述實施例。Hereinabove, the present invention has been described while exposing the preferred embodiments, but the present invention is not limited to the above embodiments.

Claims (13)

一種用於製造平面顯示器(FPD)裝置的光罩基底，於透光性基板上製造至少具有半透光性膜之平面顯示器裝置，其中前述半透光性膜具有調整透過量之功能，前述光罩基底係一種前述半透光性膜經圖案化處理而成為光罩後於製造元件之際藉由包含複數個波長之曝光光線而進行曝光處理之光罩用的光罩基底；其特徵在於：前述半透光性膜係一種在橫跨至少i線至g線的波長帶域中將透過率之變動幅度控制於5%以下之範圍的膜，於以前述半透光性膜之透過率為縱軸，以波長為橫軸之分光透過率線，於i線至g線的波長帶域中，與前述分光透過率線之橫軸相對之傾斜為向右上方上昇，前述半透光性膜之膜厚為15~250埃。 A reticle substrate for manufacturing a flat panel display (FPD) device for fabricating a flat display device having at least a semi-transmissive film on a light-transmissive substrate, wherein the semi-transmissive film has a function of adjusting a transmittance, the light The cover substrate is a reticle substrate for a reticle that is subjected to exposure processing by a plurality of wavelengths of exposure light after the patterning process of the semi-transmissive film is formed into a reticle, and is characterized by: The semi-translucent film is a film that controls a variation range of a transmittance in a wavelength band spanning at least an i-line to a g-line to a range of 5% or less, and a transmittance of the semi-transmissive film. The vertical axis, the spectral transmittance line having the wavelength on the horizontal axis, is inclined upward in the wavelength band from the i-axis to the g-line in the wavelength band from the i-ray to the g-line, and the semi-transmissive film is raised toward the upper right side. The film thickness is 15 to 250 angstroms. 如申請專利範圍第1項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜係由金屬及矽(MSi)、氧化氮化之金屬及矽(MSiON)、氧化碳化之金屬及矽(MSiCO)、氧化氮化碳化之金屬及矽(MSiCON)、氧化之金屬及矽(MSiO)或氮化之金屬及矽(MSiN)組成之膜，其中M：Mo、Ni、W、Zr、Ti、Cr。 The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is made of metal and germanium (MSi), oxynitride metal and germanium (MSiON), and oxidized carbonized. Metal and cerium (MSiCO), carbonitride carbonitized metal and cerium (MSiCON), oxidized metal and cerium (MSiO) or nitrided metal and cerium (MSiN) film, of which M: Mo, Ni, W, Zr, Ti, Cr. 如申請專利範圍第2項所述之用於製造平面顯示器裝置的光罩基底，在前述半透光性膜上具備遮光性膜，前述遮光性膜係由包含鉻、鉻之氧化物、鉻之氮化物、鉻之碳化物或鉻之氟化物之材料組成。 The photomask substrate for manufacturing a flat panel display device according to claim 2, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride. 如申請專利範圍第1項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜係由鉬及矽(MoSi)、氧化氮化之鉬及矽(MoSiON)、氧化碳化之鉬及矽(MoSiCO)、氧化氮化碳化之鉬及矽(MoSiCON)、氧化之鉬及矽(MoSiO)或氮化之鉬及矽(MoSiN)組成之膜。 The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is made of molybdenum and hafnium (MoSi), zirconia molybdenum and niobium (MoSiON), and oxidized carbonized. A film composed of molybdenum and niobium (MoSiCO), oxidized and nitrided molybdenum and niobium (MoSiCON), oxidized molybdenum and niobium (MoSiO) or nitrided molybdenum and niobium (MoSiN). 如申請專利範圍第4項所述之用於製造平面顯示器裝置的光罩基底，在前述半透光性膜上具備遮光性膜，前述遮光性膜係由包含鉻、鉻之氧化物、鉻之氮化物、鉻之碳化物或鉻之氟化物之材料組成。 The photomask substrate for manufacturing a flat panel display device according to claim 4, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride. 如申請專利範圍第1項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜為：由選自CrN膜、Ta、Ti、W、Mo或Zr之金屬組成之膜、由選自Ta、Ti、W、Mo及Zr中2種以上金屬組成之合金膜、由選自Ta、Ti、W、Mo或Zr之金屬與Cr或Ni組成之合金膜、由Ta及Si組成之膜、或由選自Ta、Ti、W、Mo及Zr中2種以上金屬之合金與Si組成之膜。 The photomask substrate for manufacturing a flat panel display device according to claim 1, wherein the semi-transmissive film is a film composed of a metal selected from the group consisting of CrN film, Ta, Ti, W, Mo or Zr, An alloy film composed of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr, an alloy film composed of a metal selected from the group consisting of Ta, Ti, W, Mo, or Zr and Cr or Ni, composed of Ta and Si A film or a film composed of an alloy of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr and Si. 一種用於製造平面顯示器裝置的光罩基底，於透光性基板上製造至少具有半透光性膜之平面顯示器裝置，其中前述半透光性膜具有調整透過量之功能，前述光罩基底係一種前述半透光性膜經圖案化處理而成為光罩後於製造元件之際藉由包含複數個波長之曝光光線而進行曝光處理之光罩用的光罩基底；其特徵在於：前述半透光性膜為一種在橫跨330nm~470nm的波長帶域中將半透光性膜之透過率之變動幅度控制於10%以下之範圍 的膜，於以前述半透光性膜之透過率為縱軸，以波長為橫軸之分光透過率線，於橫跨波長330nm~470nm的波長帶域中，與前述分光透過率線之橫軸相對之傾斜為向右上方上昇，前述半透光性膜之膜厚為15~250埃。 A reticle substrate for manufacturing a flat panel display device, wherein a transmissive substrate has a flat display device having at least a semi-transmissive film, wherein the semi-transmissive film has a function of adjusting a transmittance, and the reticle substrate is A reticle substrate for a reticle that is subjected to exposure processing by patterning a translucent film to form a reticle and then exposing the light to a plurality of wavelengths at the time of manufacturing the element; The photo film is a range in which the variation range of the transmittance of the semi-transmissive film is controlled to 10% or less in a wavelength band spanning from 330 nm to 470 nm. The film has a transmittance of the semi-transmissive film on the vertical axis and a wavelength on the horizontal axis as a spectral transmittance line in a wavelength band spanning a wavelength of 330 nm to 470 nm, and a cross-section of the spectral transmittance line. The axis is inclined upward to the upper right, and the film thickness of the semi-transmissive film is 15 to 250 angstroms. 如申請專利範圍第7項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜係由金屬及矽(MSi)、氧化氮化之金屬及矽(MSiON)、氧化碳化之金屬及矽(MSiCO)、氧化氮化碳化之金屬及矽(MSiCON)、氧化之金屬及矽(MSiO)或氮化之金屬及矽(MSiN)組成之膜，其中M：Mo、Ni、W、Zr、Ti、Cr。 The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is made of metal and germanium (MSi), oxynitride metal and germanium (MSiON), and oxidized carbonized. Metal and cerium (MSiCO), carbonitride carbonitized metal and cerium (MSiCON), oxidized metal and cerium (MSiO) or nitrided metal and cerium (MSiN) film, of which M: Mo, Ni, W, Zr, Ti, Cr. 如申請專利範圍第8項所述之用於製造平面顯示器裝置的光罩基底，在前述半透光性膜上具備遮光性膜，前述遮光性膜係由包含鉻、鉻之氧化物、鉻之氮化物、鉻之碳化物或鉻之氟化物之材料組成。 The photomask substrate for manufacturing a flat panel display device according to claim 8, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride. 如申請專利範圍第7項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜係由鉬及矽(MoSi)、氧化氮化之鉬及矽(MoSiON)、氧化碳化之鉬及矽(MoSiCO)、氧化氮化碳化之鉬及矽(MoSiCON)、氧化之鉬及矽(MoSiO)或氮化之鉬及矽(MoSiN)組成之膜。 The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is made of molybdenum and niobium (MoSi), zirconia molybdenum and niobium (MoSiON), and oxidized carbonized. A film composed of molybdenum and niobium (MoSiCO), oxidized and nitrided molybdenum and niobium (MoSiCON), oxidized molybdenum and niobium (MoSiO) or nitrided molybdenum and niobium (MoSiN). 如申請專利範圍第10項所述之用於製造平面顯示器裝置的光罩基底，在前述半透光性膜上具備遮光性膜，前述遮光性膜係由包含鉻、鉻之氧化物、鉻之氮化物、鉻之碳化物或鉻之氟化物之材料組成。 The photomask substrate for manufacturing a flat panel display device according to claim 10, wherein the semi-transmissive film is provided with a light-shielding film containing chromium, chromium oxide, and chromium. A material consisting of nitride, chromium carbide or chromium fluoride. 如申請專利範圍第7項所述之用於製造平面顯示器裝置的光罩基底，前述半透光性膜為：由選自CrN膜、Ta、Ti、W、Mo或Zr之金屬組成之膜、由選自Ta、Ti、W、Mo及Zr中2種以上金屬組成之合金膜、由選自Ta、Ti、W、Mo或Zr之金屬與Cr或Ni組成之合金膜、由Ta及Si組成之膜、或由選自Ta、Ti、W、Mo及Zr中2種以上金屬之合金與Si組成之膜。 The photomask substrate for manufacturing a flat panel display device according to claim 7, wherein the semi-transmissive film is a film composed of a metal selected from the group consisting of CrN film, Ta, Ti, W, Mo or Zr, An alloy film composed of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr, an alloy film composed of a metal selected from the group consisting of Ta, Ti, W, Mo, or Zr and Cr or Ni, composed of Ta and Si A film or a film composed of an alloy of two or more metals selected from the group consisting of Ta, Ti, W, Mo, and Zr and Si. 一種用於製造平面顯示器裝置之光罩，使用申請專利範圍第1至12項中任一項所述之光罩基底而製造，且至少具有半透光性膜之圖案。A reticle for manufacturing a flat-panel display device, which is manufactured using the reticle substrate of any one of claims 1 to 12, and having at least a pattern of a semi-translucent film.
TW102138847A 2005-12-26 2006-12-26 A mask substrate and a mask for manufacturing a flat panel display device TWI498667B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005371970 2005-12-26
JP2006348984A JP4516560B2 (en) 2005-12-26 2006-12-26 Mask blank and photomask

Publications (2)

Publication Number Publication Date
TW201407260A TW201407260A (en) 2014-02-16
TWI498667B true TWI498667B (en) 2015-09-01

Family

ID=38454326

Family Applications (3)

Application Number Title Priority Date Filing Date
TW104124008A TWI569092B (en) 2005-12-26 2006-12-26 A mask substrate and a mask for manufacturing a flat panel display device
TW102138847A TWI498667B (en) 2005-12-26 2006-12-26 A mask substrate and a mask for manufacturing a flat panel display device
TW95148957A TWI417644B (en) 2005-12-26 2006-12-26 Mask base and mask

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW104124008A TWI569092B (en) 2005-12-26 2006-12-26 A mask substrate and a mask for manufacturing a flat panel display device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW95148957A TWI417644B (en) 2005-12-26 2006-12-26 Mask base and mask

Country Status (2)

Country Link
JP (1) JP4516560B2 (en)
TW (3) TWI569092B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008052120A (en) * 2006-08-25 2008-03-06 Hoya Corp Mask blank, photomask, and method for manufacturing same
JP5407125B2 (en) * 2007-08-29 2014-02-05 大日本印刷株式会社 Gradation mask
JP4934237B2 (en) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 Gray-tone mask manufacturing method, gray-tone mask, and pattern transfer method
JP4934236B2 (en) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 Gray tone mask blank, gray tone mask manufacturing method, gray tone mask, and pattern transfer method
JP2009086383A (en) * 2007-09-29 2009-04-23 Hoya Corp Gray tone mask, pattern transfer method and gray tone mask blank
JP5097528B2 (en) * 2007-12-18 2012-12-12 Ｈｏｙａ株式会社 Multi-tone photomask
JP5336226B2 (en) * 2008-02-26 2013-11-06 Ｈｏｙａ株式会社 Multi-tone photomask manufacturing method
JP5215019B2 (en) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 Multi-tone photomask, manufacturing method thereof, and pattern transfer method
JP2010044149A (en) * 2008-08-11 2010-02-25 Hoya Corp Multi-gradation photomask, pattern transfer method, and manufacturing method of display unit using multi-gradation photomask
JP5121020B2 (en) * 2008-09-26 2013-01-16 Ｈｏｙａ株式会社 Multi-tone photomask, photomask blank, and pattern transfer method
WO2010150355A1 (en) * 2009-06-23 2010-12-29 Hoya株式会社 Multilevel gradation photomask
JP7037919B2 (en) 2017-11-14 2022-03-17 アルバック成膜株式会社 Mask blank, halftone mask and its manufacturing method
JP2024004082A (en) 2022-06-28 2024-01-16 Hoya株式会社 Mask blank, mask for transcription, method for manufacturing mask for transcription, and method for manufacturing display device
JP2024006605A (en) 2022-07-04 2024-01-17 Hoya株式会社 Mask blank, mask for transcription, method for manufacturing mask for transcription, and method for manufacturing display device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026820A (en) * 1996-07-11 1998-01-27 Toppan Printing Co Ltd Halftone phase shift mask blank, and halftone phase shift mask
JP2005037933A (en) * 2003-06-30 2005-02-10 Hoya Corp Method for manufacturing gray tone mask and gray tone mask

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01214859A (en) * 1988-02-24 1989-08-29 Hitachi Ltd Mask
KR100295385B1 (en) * 1993-04-09 2001-09-17 기타지마 요시토시 Halftone Phase Shift Photomask, Blanks for Halftone Phase Shift Photomask and Manufacturing Method thereof
JP3262302B2 (en) * 1993-04-09 2002-03-04 大日本印刷株式会社 Phase shift photomask, blank for phase shift photomask, and method of manufacturing the same
KR100311704B1 (en) * 1993-08-17 2001-12-15 기타오카 다카시 Halftone Phase Shift Photomask, Blanks for Halftone Phase Shift Photomask and Manufacturing Method of the Blanks
TW358170B (en) * 1997-06-10 1999-05-11 Taiwan Semiconductor Mfg Co Ltd Semi-transparent phase shift mask structure and the manufacturing method
JPH11125896A (en) * 1997-08-19 1999-05-11 Toppan Printing Co Ltd Photomask blank and photomask
TW479159B (en) * 2001-02-09 2002-03-11 Nanya Technology Corp Interlacing phase shift mask and its manufacturing method
JP2003029393A (en) * 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
JP2003195483A (en) * 2001-12-28 2003-07-09 Hoya Corp Photomask blank, photomask and method for manufacturing the same
JP2003322947A (en) * 2002-04-26 2003-11-14 Hoya Corp Halftone phase shifting mask blank and halftone phase shifting mask
GB0215243D0 (en) * 2002-07-02 2002-08-14 Koninkl Philips Electronics Nv Mask and manufacturing method using mask
JP2004177683A (en) * 2002-11-27 2004-06-24 Clariant (Japan) Kk Method for forming pattern by using ultrahigh heat-resistant positive photosensitive composition
KR101049624B1 (en) * 2003-02-03 2011-07-15 호야 가부시키가이샤 Photomask blank, photomask, and pattern transfer method using photomask
KR101135246B1 (en) * 2003-04-09 2012-06-07 호야 가부시키가이샤 Method of producing photomask and photomask blank
JP4385690B2 (en) * 2003-09-09 2009-12-16 凸版印刷株式会社 Exposure mask for manufacturing liquid crystal display element and method for manufacturing the same
JP4919220B2 (en) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 Gray tone mask
JP4961990B2 (en) * 2005-12-14 2012-06-27 大日本印刷株式会社 Mask blank and gradation mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1026820A (en) * 1996-07-11 1998-01-27 Toppan Printing Co Ltd Halftone phase shift mask blank, and halftone phase shift mask
JP2005037933A (en) * 2003-06-30 2005-02-10 Hoya Corp Method for manufacturing gray tone mask and gray tone mask

Also Published As

Publication number Publication date
JP2007199700A (en) 2007-08-09
TW201407260A (en) 2014-02-16
JP4516560B2 (en) 2010-08-04
TW200732829A (en) 2007-09-01
TW201541186A (en) 2015-11-01
TWI417644B (en) 2013-12-01
TWI569092B (en) 2017-02-01

Similar Documents

Publication Publication Date Title
TWI498667B (en) A mask substrate and a mask for manufacturing a flat panel display device
TWI422961B (en) Photomask and method of manufacturing the same, method of transferring a pattern, and method of manufacturing a display device
JP3093632U (en) Halftone phase shift mask blank
KR101151685B1 (en) Blankmask and photomask
TWI584058B (en) Large-size phase shift mask and producing method of same
JP4906888B2 (en) Mask blank and photomask
KR101024477B1 (en) Mask blank and photomask
KR101333931B1 (en) Mask blank, and photomask
JP4726010B2 (en) Mask blank and photomask
TWI417645B (en) Mask mask and mask, and its manufacturing methods
TWI448816B (en) Gray tone mask blank, method of manufacturing a gray tone mask, gray tone mask, and method of transferring a pattern
US7648804B2 (en) Mask and fabrication method thereof and application thereof
TW201019045A (en) Multi-tone photomask, pattern transfer method and method of producing a display device using the multi-tone photomask
JP5004283B2 (en) FPD device manufacturing mask blank, FPD device manufacturing mask blank design method, and FPD device manufacturing mask manufacturing method
KR101430763B1 (en) Mask blank and photomask
KR101056592B1 (en) Mask Blanks and Photomasks
KR101543288B1 (en) Multi-gray scale photomask, photomask blank and pattern transcription method
JP5414079B2 (en) FPD device manufacturing mask blank, photomask, and FPD device manufacturing mask blank design method