TWI498038B - Infrared radiation device - Google Patents
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/10—Arrangements of light sources specially adapted for spectrometry or colorimetry
- G01J3/108—Arrangements of light sources specially adapted for spectrometry or colorimetry for measurement in the infrared range
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Resistance Heating (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
本發明係關於紅外線放射元件。The present invention relates to an infrared radiation element.
自以往，已有研究開發利用MEMS(micro electro mechanical systems，微機電系統)之製造技術等方式製造的紅外線放射元件。此種紅外線放射元件可用來作為氣體偵測器或光學分析裝置等之紅外光源(紅外線源)。In the past, infrared radiation elements manufactured by methods such as manufacturing technology of MEMS (micro electro mechanical systems) have been researched and developed. Such an infrared radiation element can be used as an infrared light source (infrared source) of a gas detector or an optical analysis device.
就此種紅外線放射元件而言，已有人提案例如圖4及圖5所示構成的紅外線放射元件70(文獻1[日本國公開專利公報第平11-274553號])。In the case of such an infrared radiation element, for example, an infrared radiation element 70 having a configuration as shown in FIG. 4 and FIG. 5 has been proposed (Document 1 [Japanese Laid-Open Patent Publication No. Hei 11-274553]).
紅外線放射元件70包含由n-型矽所構成的元件基板21。此元件基板21設有：孔洞22，從一面21a側梯形地貫穿至相反面21b側。紅外線放射元件70在元件基板21的一面21a側形成有由p型半導體所構成的帶狀之隔膜部23，以封阻孔洞22的一邊之開口面。紅外線放射元件70在隔膜部23的表面形成有由n型半導體所構成的發熱部74，在發熱部74的表面兩端設有由金屬材料所構成的第1、第2電極55、56。The infrared radiation element 70 includes an element substrate 21 composed of an n-type crucible. The element substrate 21 is provided with a hole 22 penetrating from the one surface 21a side to the opposite surface 21b side. In the infrared radiation element 70, a strip-shaped diaphragm portion 23 made of a p-type semiconductor is formed on the one surface 21a side of the element substrate 21 to block the opening surface of one side of the hole 22. In the infrared radiation element 70, a heat generating portion 74 made of an n-type semiconductor is formed on the surface of the diaphragm portion 23, and first and second electrodes 55 and 56 made of a metal material are provided on both ends of the surface of the heat generating portion 74.
上述的紅外線放射元件70在第1電極55與第2電極56之間施加有電壓時，電流在發熱部74流動，使發熱部74發熱而放射紅外線。When the voltage is applied between the first electrode 55 and the second electrode 56 in the infrared radiation element 70 described above, a current flows in the heat generating portion 74, and the heat generating portion 74 generates heat to emit infrared rays.
紅外線放射元件70在元件基板21的一面21a側及隔膜部23的表面受 到矽氧化膜27所覆蓋，不僅是表面保護之目的，且為了促進紅外線放射。The infrared radiation element 70 is subjected to the surface 21a side of the element substrate 21 and the surface of the diaphragm portion 23 Covering the tantalum oxide film 27 is not only a purpose of surface protection, but also to promote infrared radiation.
在上述的紅外線放射元件70中，使發熱部74的中央部74a之寬度變廣，使兩端部74b、74c的寬度變窄。藉此，紅外線放射元件70在發熱部74中溫度成為相對高溫的高溫部之區域變廣，紅外線的放射密度增大。In the infrared radiation element 70 described above, the width of the central portion 74a of the heat generating portion 74 is widened, and the widths of the both end portions 74b and 74c are narrowed. As a result, the infrared radiation element 70 is widened in the heat generating portion 74 in a region where the temperature is relatively high in the high temperature portion, and the radiation density of the infrared rays is increased.
另外，已知在將紅外線放射元件用來作為例如分光式氣體偵測器用之紅外光源時，可對於紅外線放射元件進行間歇性驅動來間歇性放射紅外線，並利用鎖相放大器對於偵測紅外線的受光元件之輸出進行增幅，藉以提昇氣體偵測器之輸出的S/N比。Further, it is known that when an infrared radiation element is used as an infrared light source for a spectroscopic gas detector, for example, an infrared radiation element can be intermittently driven to intermittently emit infrared rays, and a lock-in amplifier can be used to detect infrared light. The output of the component is increased to increase the S/N ratio of the output of the gas detector.
又，在上述的紅外線放射元件70中，源自於動作中產生的熱應力，隔膜部23中，應力容易集中於重疊在孔洞22的上述一邊之開口面的矩形區域之角落部。因此，在紅外線放射元件70中，達成高輸出化或間歇性放射紅外線的截波速度之高速化時，隔膜部23將有可能以隔膜部23的上述矩形區域之角落部作為起點而破損。Further, in the infrared radiation element 70 described above, the stress is easily concentrated in the corner portion of the rectangular region which is superposed on the opening surface of the one side of the hole 22 in the diaphragm portion 23 due to the thermal stress generated during the operation. Therefore, in the infrared radiation element 70, when the high-speed or high-speed interception speed of the intermittent infrared ray is increased, the diaphragm portion 23 may be broken by using the corner portion of the rectangular portion of the diaphragm portion 23 as a starting point.
又，在上述的紅外線放射元件70中，在元件基板21的一面21a側對於硼進行離子注入施加退火，藉以形成有隔膜部23。因此，在紅外線放射元件70中，隔膜部23的熱傳導率係推量為與元件基板21的熱傳導率同等，推量為隔膜部23的熱阻小、難以更進一步高輸出化。Further, in the above-described infrared radiation element 70, boron is ion-implanted and annealed on the surface 21a side of the element substrate 21, whereby the diaphragm portion 23 is formed. Therefore, in the infrared radiation element 70, the thermal conductivity of the diaphragm portion 23 is equal to the thermal conductivity of the element substrate 21, and the thermal resistance of the diaphragm portion 23 is small, and it is difficult to further increase the output.
本發明有鑑於上述事由，其目的在於提供一種紅外線放射元件，可達成高輸出化，且能達成可靠度之提昇。The present invention has been made in view of the above circumstances, and an object thereof is to provide an infrared radiation element which can achieve high output and can achieve an improvement in reliability.
本發明之第1形態之紅外線放射元件包含；基板；開口部；第1絕緣層；發熱體層；第2絕緣層；及通電部。該基板具有正交於厚度方向的一表面。該開口部在該厚度方向上貫穿該基板。該第1絕緣層在該基板的該 一表面配置成覆蓋該開口部。該發熱體層配置在該第1絕緣層中的與該基板相反側，俾在平行於該一表面的基準面中位於該開口部之內側。該第2絕緣層在該第1絕緣層中的與該基板相反側配置成覆蓋該發熱體層。該通電部配置在該第2絕緣層中的與該基板相反側，並電性連接於該發熱體層。該開口部的形狀係在該基準面內具有角。該通電部具有在該厚度方向上與該開口部之該角重疊的補強部。An infrared radiation element according to a first aspect of the present invention includes: a substrate; an opening; a first insulating layer; a heat generating layer; a second insulating layer; and an energizing portion. The substrate has a surface that is orthogonal to the thickness direction. The opening penetrates the substrate in the thickness direction. The first insulating layer is on the substrate A surface is disposed to cover the opening. The heat generating body layer is disposed on the opposite side of the first insulating layer from the substrate, and is located inside the opening in a reference plane parallel to the one surface. The second insulating layer is disposed to cover the heat generating body layer on the side opposite to the substrate in the first insulating layer. The energizing portion is disposed on the opposite side of the second insulating layer from the substrate, and is electrically connected to the heating element layer. The shape of the opening has an angle in the reference plane. The energizing portion has a reinforcing portion that overlaps the corner of the opening in the thickness direction.
本發明之第2形態之紅外線放射元件係如第1形態，其中，該第1絕緣層、該第2絕緣層、及該發熱體層，就整體而言具有拉伸應力。According to a first aspect of the present invention, in the first aspect, the first insulating layer, the second insulating layer, and the heating element layer have tensile stress as a whole.
本發明之第3形態之紅外線放射元件係如第1或第2形態，其中，該通電部包含：電極；及配線。該電極配置在該基板上，俾在該基準面中位於該開口部的外側。該配線將該電極電性連接至該發熱體層。The infrared radiation element according to a third aspect of the present invention is the first or second aspect, wherein the current-carrying portion includes: an electrode; and a wiring. The electrode is disposed on the substrate, and the crucible is located outside the opening in the reference surface. The wiring electrically connects the electrode to the heating element layer.
本發明之第4形態之紅外線放射元件係如第3形態中，其中，該開口部係具有4個該角的矩形或正方形。該通電部具有分別對應於該4個角的4個該補強部。According to a third aspect of the present invention, in the infrared radiation element of the fourth aspect, the opening has a rectangular or square shape having the four corners. The energizing portion has four reinforcing portions corresponding to the four corners.
本發明之第5形態之紅外線放射元件係如第4形態，其中，該通電部具有4個該配線。該4條配線分別包含對應的4個該補強部。According to a fourth aspect of the invention, the infrared radiation element of the fifth aspect of the invention is characterized in that the current-carrying portion has four such wirings. Each of the four wires includes four corresponding reinforcing portions.
本發明之第6形態之紅外線放射元件係如第5形態，其中，該電極包含第1電極與第2電極。該第1電極及該第2電極在該基準面內沿著該開口部的一邊之既定方向上配置於該開口部的兩側。該第1電極連接至分別對應於該4個角之中靠近該第1電極的2個角之該配線。該第2電極連接至分別對應於該4個角之中靠近該第2電極的2個角之該配線。According to a fifth aspect of the present invention, in the infrared radiation device of the sixth aspect, the electrode includes the first electrode and the second electrode. The first electrode and the second electrode are disposed on both sides of the opening in a predetermined direction along one side of the opening in the reference plane. The first electrode is connected to the wiring corresponding to two corners of the four corners adjacent to the first electrode. The second electrode is connected to the wiring corresponding to two corners of the four corners adjacent to the second electrode.
本發明之第7形態之紅外線放射元件係如第6形態，其中，該配線具有連接至該電極的端部。該端部越靠近該電極時寬度越大。該端部係該補強部。According to a seventh aspect of the present invention, in the infrared radiation device of the seventh aspect, the wiring has an end portion connected to the electrode. The closer the end is to the electrode, the greater the width. The end portion is the reinforcing portion.
本發明之第8形態之紅外線放射元件係如第7形態，其中，該端部係側面為凹面。According to a seventh aspect of the invention, the infrared radiation element according to the eighth aspect of the invention is characterized in that the side surface of the end portion is a concave surface.
本發明之第9形態之紅外線放射元件係如第5~第8形態其中任1者，其中，該發熱體層係在該基準面中具有4個第2角的矩形或正方形。該發熱體層在該基準面中具有分別與該開口部之四邊平行的四邊。該4條配線分別在該基準面中形成為通過該發熱體層的該第2角與最靠近此第2角的該開口部之該角的直線狀。In the infrared radiation element according to the ninth aspect of the present invention, the heating element layer is a rectangle or a square having four second corners in the reference surface. The heating element layer has four sides parallel to the four sides of the opening in the reference surface. Each of the four wires is formed in a linear shape passing through the corner of the second corner of the heat generating body layer and the opening portion closest to the second corner.
本發明之第10形態之紅外線放射元件係如第4形態，其中，該開口部係具有4個該角的矩形或正方形。該電極包含第1電極與第2電極。該第1，電極及該第2電極在該基準面中配置於沿著該開口部的一邊之既定方向的該開口部之兩側。該第1電極包含分別對應於該4個角之中靠近該第1電極的2個角之該補強部。該第2電極包含分別對應於該4個角之中靠近該第2電極的2個角之該補強部。The infrared radiation element according to a tenth aspect of the present invention is the fourth aspect, wherein the opening has a rectangular or square shape having the four corners. The electrode includes a first electrode and a second electrode. In the first, the electrode and the second electrode are disposed on both sides of the opening in a predetermined direction along one side of the opening in the reference surface. The first electrode includes the reinforcing portion corresponding to two corners of the four corners adjacent to the first electrode. The second electrode includes the reinforcing portions corresponding to the two corners of the four corners adjacent to the second electrode.
本發明之第11形態之紅外線放射元件係如第3~第10形態其中任1者，其中，該配線係藉由高熔點材料來形成。The infrared radiation element according to the eleventh aspect of the present invention is any one of the third to tenth aspects, wherein the wiring is formed of a high melting point material.
本發明之第12形態之紅外線放射元件係如第11形態，其中，該發熱體層藉由具有該高熔點材料以上之熔點的材料來形成。An infrared radiation element according to a twelfth aspect of the present invention is the eleventh aspect, wherein the heat generating body layer is formed of a material having a melting point or higher than the high melting point material.
本發明之第13形態之紅外線放射元件係如第12形態，其中，該配線係藉由鉭來形成。該發熱體層係藉由氮化鉭來形成。The infrared radiation element according to a thirteenth aspect of the present invention is the twelfth aspect, wherein the wiring is formed by ruthenium. The heating element layer is formed by tantalum nitride.
本發明之第14形態之紅外線放射元件係如第1~第13形態其中任1者，其中，該第1絕緣層及該第2絕緣層具有熱絕緣性及電絕緣性。該發熱體層構成為藉由通電而放射紅外線。該第1絕緣層、該發熱體層、及該第2絕緣層構成為薄膜構造部。該薄膜構造部包含：隔膜部，配置於該開 口部上；支持部，配置於該基板上並連結於該隔膜部。The infrared radiation element according to a fourteenth aspect of the present invention, wherein the first insulating layer and the second insulating layer have thermal insulation properties and electrical insulation properties. The heating element layer is configured to emit infrared rays by energization. The first insulating layer, the heating element layer, and the second insulating layer are configured as a thin film structure portion. The film structure portion includes a diaphragm portion and is disposed at the opening The support portion is disposed on the substrate and coupled to the diaphragm portion.
1、70‧‧‧紅外線放射元件1, 70‧‧‧ Infrared radiation components
2‧‧‧基板2‧‧‧Substrate
2a‧‧‧開口部2a‧‧‧ openings
2b‧‧‧一表面2b‧‧‧ a surface
2c‧‧‧另一表面2c‧‧‧ another surface
3‧‧‧第1絕緣層3‧‧‧1st insulation layer
4‧‧‧發熱體層4‧‧‧Fever body layer
4a‧‧‧放射區域4a‧‧‧radiation area
4b‧‧‧接觸區域4b‧‧‧Contact area
5‧‧‧第2絕緣層5‧‧‧2nd insulation layer
5a‧‧‧接觸孔5a‧‧‧Contact hole
6‧‧‧薄膜構造部6‧‧‧Film Construction Department
6D‧‧‧隔膜部6D‧‧‧diaphragm department
6S‧‧‧支持部6S‧‧‧Support Department
7、7A、7B‧‧‧接觸部7, 7A, 7B‧‧‧Contacts
8、81~86‧‧‧配線8, 81~86‧‧‧ wiring
8a‧‧‧一端部(第1端部)8a‧‧‧One end (1st end)
8b‧‧‧另一端部(第2端部)8b‧‧‧Other end (2nd end)
9、9A、9B‧‧‧電極9, 9A, 9B‧‧‧ electrodes
9a‧‧‧接墊部9a‧‧‧Pushing Department
9b‧‧‧延伸設置部9b‧‧‧Extension Settings Department
9c、9c1~9c4‧‧‧補強部9c, 9c1~9c4‧‧‧ reinforcement
10‧‧‧側面10‧‧‧ side
11‧‧‧通電部11‧‧‧Electricity Department
20~24‧‧‧角20~24‧‧‧ corner
21‧‧‧元件基板21‧‧‧ element substrate
21a‧‧‧一面21a‧‧‧ side
21b‧‧‧相反面21b‧‧‧ opposite side
22‧‧‧孔洞22‧‧‧ holes
23‧‧‧隔膜部23‧‧‧ Diaphragm department
27‧‧‧矽氧化膜27‧‧‧矽Oxide film
40~44‧‧‧第2角40~44‧‧‧2nd corner
55‧‧‧第1電極55‧‧‧1st electrode
56‧‧‧第2電極56‧‧‧2nd electrode
60~64‧‧‧角落部60~64‧‧‧ corner
74‧‧‧發熱部74‧‧‧Fever Department
74a‧‧‧中央部74a‧‧‧Central Department
74b、74c‧‧‧兩端部74b, 74c‧‧‧ both ends
圖1(a)係實施形態1的紅外線放射元件之概略俯視圖，圖1(b)係圖1(a)的A-A線段剖視圖。Fig. 1(a) is a schematic plan view of the infrared radiation element of the first embodiment, and Fig. 1(b) is a cross-sectional view taken along line A-A of Fig. 1(a).
圖2(a)係實施形態2的紅外線放射元件之概略俯視圖，圖2(b)係圖2(a)的B-B線段剖視圖。Fig. 2 (a) is a schematic plan view of the infrared radiation element of the second embodiment, and Fig. 2 (b) is a cross-sectional view taken along line B-B of Fig. 2 (a).
圖3(a)係實施形態3的紅外線放射元件之概略俯視圖，圖3(b)係圖3(a)的C-C線段剖視圖。Fig. 3 (a) is a schematic plan view of the infrared radiation element of the third embodiment, and Fig. 3 (b) is a cross-sectional view taken along line C-C of Fig. 3 (a).
圖4係習知例的紅外線放射元件之俯視圖。Fig. 4 is a plan view showing a conventional infrared radiation element.
圖5係圖4的G-G線段剖視圖。Figure 5 is a cross-sectional view taken along line G-G of Figure 4.
(實施形態1)(Embodiment 1)
以下依據圖1來說明本實施形態之紅外線放射元件1。Hereinafter, the infrared radiation element 1 of the present embodiment will be described with reference to Fig. 1 .
紅外線放射元件1包含：基板2；以及薄膜構造部6，具有在該基板2的一表面(圖1(b)中的頂面)2b側形成的第1絕緣層3、發熱體層4、及第2絕緣層5之疊層構造。The infrared radiation element 1 includes a substrate 2 and a film structure portion 6 having a first insulating layer 3, a heat generating layer 4, and a first surface formed on one surface (top surface in FIG. 1(b)) 2b of the substrate 2. 2 laminated structure of the insulating layer 5.
薄膜構造部6從靠近基板2之側起，依照順序疊層有：第1絕緣層3、發熱體層4、第2絕緣層5。The film structure portion 6 is laminated with the first insulating layer 3, the heat generating body layer 4, and the second insulating layer 5 in order from the side close to the substrate 2.
又，紅外線放射元件1包含：開孔部(開口部)2a，貫穿基板2的厚度方向，開口形狀為矩形；成對之電極9(9A)、9(9B)，電性連接至發熱體層4；及配線8(81~84)，將各電極9分別與發熱體層4加以電性連接。Further, the infrared radiation element 1 includes an opening portion (opening portion) 2a that penetrates the thickness direction of the substrate 2 and has a rectangular opening shape, and the pair of electrodes 9 (9A) and 9 (9B) are electrically connected to the heating element layer 4 And wirings 8 (81 to 84), and each of the electrodes 9 is electrically connected to the heating element layer 4, respectively.
又，紅外線放射元件1中，薄膜構造部6包含：鄰接於開口部2a的矩 形之隔膜部6D；及圍繞隔膜部6D的框架狀之支持部6S。Further, in the infrared radiation element 1, the film structure portion 6 includes a moment adjacent to the opening portion 2a. a diaphragm portion 6D having a shape; and a frame-shaped support portion 6S surrounding the diaphragm portion 6D.
隔膜部6D在中央部具有第1絕緣層3、發熱體層4及第2絕緣層5之疊層構造。隔膜部6D的周部與支持部6S具有第1絕緣層3及第2絕緣層5之疊層構造。The diaphragm portion 6D has a laminated structure of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 at the center portion. The peripheral portion of the diaphragm portion 6D and the support portion 6S have a laminated structure of the first insulating layer 3 and the second insulating layer 5.
亦即，第1絕緣層3、發熱體層4、及第2絕緣層5構成了薄膜構造部6。薄膜構造部6具有：隔膜部6D，配置於開口部2a上；支持部6S，配置於基板2上並連結於隔膜部6D。That is, the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 constitute the film structure portion 6. The film structure portion 6 has a diaphragm portion 6D disposed on the opening portion 2a, and a support portion 6S disposed on the substrate 2 and coupled to the diaphragm portion 6D.
又，紅外線放射元件1中，各電極9配置於支持部6S，由各配線8與各電極9所構成的通電部11通過隔膜部6D的各角落部60(61~64)上。Further, in the infrared radiation element 1, each electrode 9 is disposed in the support portion 6S, and the energization portion 11 composed of each of the wirings 8 and the respective electrodes 9 passes through the corner portions 60 (61 to 64) of the diaphragm portion 6D.
紅外線放射元件1藉由給予發熱體層4的通電而從發熱體層4放射紅外線。The infrared radiation element 1 emits infrared rays from the heating element layer 4 by energization of the heating element layer 4.
以下詳細說明紅外線放射元件1之各構成要素。Hereinafter, each component of the infrared radiation element 1 will be described in detail.
基板2具有正交於厚度方向(圖1(b)中的上下方向)的兩面，即一表面(圖1(b)中的頂面)2b及另一表面(圖1(b)中的底面)2c。例如，一表面2b及另一表面2c係平面。基板2係藉由(100)面的單晶矽基板來形成該一表面2b，但不限於此，亦可係藉由(110)面的單晶矽基板來形成。又，基板2不限於單晶矽基板，亦可係多晶矽基板，也可係矽基板以外。基板2的材料宜為熱傳導率大於第1絕緣層3之材料且熱容量大的材料。The substrate 2 has two faces orthogonal to the thickness direction (up and down direction in FIG. 1(b)), that is, one surface (top surface in FIG. 1(b)) 2b and the other surface (bottom surface in FIG. 1(b)) ) 2c. For example, one surface 2b and the other surface 2c are planar. The substrate 2 is formed by a single crystal germanium substrate of a (100) plane, but is not limited thereto, and may be formed of a single crystal germanium substrate of a (110) plane. Further, the substrate 2 is not limited to a single crystal germanium substrate, and may be a polycrystalline germanium substrate or a germanium substrate. The material of the substrate 2 is preferably a material having a thermal conductivity higher than that of the material of the first insulating layer 3 and having a large heat capacity.
基板2的外周形狀係矩形。基板2的外形尺寸並無特別限定，例如宜設定在10mm2 以下(10mm×10mm以下)。The outer peripheral shape of the substrate 2 is rectangular. The outer shape of the substrate 2 is not particularly limited, and is preferably set to, for example, 10 mm 2 or less (10 mm × 10 mm or less).
開口部2a形成為在厚度方向貫穿基板2。開口部2a係如下形狀：在平行於基板2的一表面2b之基準面內具有角20。例如，開口部2a係具有4個角20(21~24)的矩形或正方形。尤其，在本實施形態中，基板2係將開口部2a的開口形狀定為矩形。The opening 2a is formed to penetrate the substrate 2 in the thickness direction. The opening portion 2a has a shape having an angle 20 in a reference plane parallel to a surface 2b of the substrate 2. For example, the opening portion 2a has a rectangular shape or a square shape of four corners 20 (21 to 24). In particular, in the present embodiment, the substrate 2 has a rectangular shape in which the opening portion 2a has an opening shape.
薄膜構造部6形成在基板2的一表面2b，俾覆蓋開口部2a。因此，隔膜部6D的4個角落部60(61~64)係隔膜部6D中分別與開口部2a的角20(21~24)於厚度方向(圖1(b)中的上下方向)上重疊的部位。The film structure portion 6 is formed on one surface 2b of the substrate 2, and covers the opening portion 2a. Therefore, the four corner portions 60 (61 to 64) of the diaphragm portion 6D are overlapped with the corners 20 (21 to 24) of the opening portion 2a in the thickness direction (the vertical direction in FIG. 1(b)). The part.
基板2的開口部2a形成為如下形狀：在另一表面2c側(圖1(b)中的下側)的開口面積大於一表面2b側。在此，基板2的開口部2a形成為如下形狀：越離開薄膜構造部6的第1絕緣層3時，開口面積越緩緩變大。基板2的開口部2a亦可藉由對於基板2進行蝕刻來形成。The opening portion 2a of the substrate 2 is formed in a shape in which the opening area on the other surface 2c side (the lower side in FIG. 1(b)) is larger than the one surface 2b side. Here, the opening 2a of the substrate 2 is formed in such a shape that the opening area becomes gradually larger as it goes away from the first insulating layer 3 of the film structure portion 6. The opening 2a of the substrate 2 can also be formed by etching the substrate 2.
採用一表面2b為(100)面的單晶矽基板來作為基板2時，基板2的開口部2a可藉由使用鹼性溶液作為蝕刻液的異向性蝕刻來形成。When a single crystal germanium substrate having a surface 2b of (100) plane is used as the substrate 2, the opening 2a of the substrate 2 can be formed by anisotropic etching using an alkaline solution as an etching liquid.
又，紅外線放射元件1在製造時形成開口部2a之際的遮罩層係由無機材料所構成時，亦可於基板2的另一表面2c側留下遮罩層。另，就遮罩層而言，例如可採用矽氧化膜與矽氮化膜之疊層膜等。Further, when the infrared ray element 1 is formed of an inorganic material when the opening portion 2a is formed at the time of production, the mask layer may be left on the other surface 2c side of the substrate 2. Further, as the mask layer, for example, a laminated film of a tantalum oxide film and a tantalum nitride film or the like can be used.
第1絕緣層3具有熱絕緣性及電絕緣性。第1絕緣層3在基板2的一表面2b配置成覆蓋開口部2a。第1絕緣層3例如係由基板2側的矽氧化膜，及疊層在與該矽氧化膜中的基板2側為相反側的矽氮化膜所構成。The first insulating layer 3 has thermal insulation properties and electrical insulation properties. The first insulating layer 3 is disposed on one surface 2b of the substrate 2 so as to cover the opening 2a. The first insulating layer 3 is made of, for example, a tantalum oxide film on the substrate 2 side, and a tantalum nitride film laminated on the side opposite to the substrate 2 side of the tantalum oxide film.
又，第1絕緣層3宜具有拉伸應力(殘留拉伸應力)。換言之，第1絕緣層3宜不具有壓縮應力(殘留壓縮應力)。所以，第1絕緣層3形成為具有拉伸應力。另，形成具有拉伸應力之絕緣層的方法係眾所皆知，故省略說明。Further, the first insulating layer 3 preferably has a tensile stress (residual tensile stress). In other words, the first insulating layer 3 preferably does not have a compressive stress (residual compressive stress). Therefore, the first insulating layer 3 is formed to have tensile stress. Further, a method of forming an insulating layer having tensile stress is well known, and description thereof will be omitted.
尤其，第1絕緣層3、第2絕緣層5、及發熱體層4，就整體而言宜具有拉伸應力(殘留拉伸應力)。亦即，利用第1絕緣層3、第2絕緣層5、及發熱體層4所構成的部位宜具有拉伸應力。In particular, the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 preferably have tensile stress (residual tensile stress) as a whole. In other words, the portion formed by the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 preferably has tensile stress.
例如，第1絕緣層3、第2絕緣層5、及發熱體層4亦可分別具有拉伸 應力。另，不必使第1絕緣層3、第2絕緣層5、及發熱體層4全部具有拉伸應力。亦即，只要第1絕緣層3、第2絕緣層5、發熱體層4就整體而言具有拉伸應力，則第1絕緣層3、第2絕緣層5、及發熱體層4其中任何者亦可具有壓縮應力，也可不具有壓縮應力或拉伸應力。For example, the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 may each have an extension stress. Further, it is not necessary to have tensile stress in all of the first insulating layer 3, the second insulating layer 5, and the heating element layer 4. In other words, as long as the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 have tensile stress as a whole, any of the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 may be used. It has compressive stress and may not have compressive stress or tensile stress.
例如，即使第1絕緣層3具有拉伸應力、第2絕緣層5不具有應力、發熱體層4具有壓縮應力，只要第1絕緣層3、第2絕緣層5、發熱體層4整體而言具有拉伸應力就好。For example, even if the first insulating layer 3 has tensile stress, the second insulating layer 5 does not have stress, and the heating element layer 4 has compressive stress, the first insulating layer 3, the second insulating layer 5, and the heating element layer 4 as a whole have a pull. Stretching stress is good.
第1絕緣層3不限於矽氧化膜與矽氮化膜之疊層膜，例如可係矽氧化膜或矽氮化膜的單層構造，也可係藉由其他材料所構成的單層構造或2層以上的疊層構造。The first insulating layer 3 is not limited to a laminated film of a tantalum oxide film and a tantalum nitride film, and may be, for example, a single layer structure of a tantalum oxide film or a tantalum nitride film, or may be a single layer structure composed of other materials or Two or more laminated structures.
第1絕緣層3亦具有作為在紅外線放射元件1的製造時從基板2的另一表面2c側蝕刻基板2來形成開口部2a之際的蝕刻阻擋層之功能。The first insulating layer 3 also functions as an etching stopper when the substrate 2 is etched from the other surface 2c side of the substrate 2 to form the opening 2a at the time of manufacture of the infrared ray element 1.
發熱體層4構成為藉由通電而放射紅外線。發熱體層4配置在第1絕緣層3中的與基板2為相反側(圖1(b)中的上側)，俾在平行於基板2的一表面2b之基準面中位於開口部2a的內側。例如，發熱體層4在基準面配置於開口部2a的中央部分。The heating body layer 4 is configured to emit infrared rays by energization. The heating element layer 4 is disposed on the opposite side of the substrate 2 in the first insulating layer 3 (upper side in FIG. 1(b)), and is located inside the opening 2a in a reference plane parallel to the surface 2b of the substrate 2. For example, the heating element layer 4 is disposed on the reference surface in the central portion of the opening 2a.
例如，發熱體層4係在基準面具有4個角(第2角)40(41~44)的矩形或正方形。發熱體層4在基準面具有分別與開口部2a的四邊平行的四邊。在本實施形態中，發熱體層4係將俯視形狀定為矩形。For example, the heating element layer 4 is a rectangle or a square having four corners (second angles) 40 (41 to 44) on the reference plane. The heating body layer 4 has four sides parallel to the four sides of the opening 2a on the reference surface. In the present embodiment, the heating element layer 4 has a rectangular shape in plan view.
發熱體層4的俯視尺寸設定為小於第1絕緣層3中臨於開口部2a的表面的俯視尺寸。亦即，發熱體層4的俯視尺寸係設定為小於隔膜部6D的俯視尺寸。在此，隔膜部6D的俯視尺寸並無特別限定，例如宜設定在5mm2 以下。The planar view of the heating element layer 4 is set to be smaller than the planar size of the surface of the first insulating layer 3 that is adjacent to the opening 2a. That is, the size of the heat generating layer 4 in plan view is set to be smaller than the plan view size of the diaphragm portion 6D. Here, the size of the diaphragm portion 6D in plan view is not particularly limited, and is preferably set to, for example, 5 mm 2 or less.
發熱體層4的俯視尺寸宜為如下：將排除插設於配線8的端部(一端部)8a與發熱體層4之間將兩者加以電性連接的接觸部7所重疊的接觸區域4b後的放射區域4a之俯視尺寸設定在3mm2 以下。The heat generating layer 4 is preferably in a plan view such that the contact region 4b in which the contact portion 7 electrically connected between the end portion (one end portion) 8a of the wiring 8 and the heat generating body layer 4 is electrically connected is excluded. The plan view size of the radiation area 4a is set to 3 mm 2 or less.
發熱體層4的材料採用氮化鉭。亦即，發熱體層4係由氮化鉭層所構成。發熱體層4的材料不限於氮化鉭，例如亦可採用氮化鈦、鎳鉻、鎢、鈦、釷、鉑、鋯、鉻、釩、銠、鉿、釕、硼、銥、鈮、鉬、鉭、鋨、錸、鎳、鈥、鈷、鉺、釔、鐵、鈧、銩、鈀、鎦等。The material of the heating body layer 4 is tantalum nitride. That is, the heating body layer 4 is composed of a tantalum nitride layer. The material of the heating body layer 4 is not limited to tantalum nitride, and for example, titanium nitride, nickel chromium, tungsten, titanium, tantalum, platinum, zirconium, chromium, vanadium, niobium, tantalum, niobium, boron, lanthanum, cerium, molybdenum, or the like may also be used.钽, 锇, 铼, nickel, lanthanum, cobalt, lanthanum, cerium, iron, lanthanum, cerium, palladium, lanthanum, etc.
又，就發熱體層4的材料而言，亦可採用導電性多晶矽。亦即，發熱體層4亦可藉由導電性多晶矽層來構成。針對發熱體層4，從高溫下化學性穩定且薄膜電阻的設計容易性之觀點而言，宜採用氮化鉭層或者導電性多晶矽層。Further, as the material of the heating body layer 4, a conductive polysilicon can also be used. That is, the heating body layer 4 can also be formed by a conductive polysilicon layer. The heat generating layer 4 is preferably a tantalum nitride layer or a conductive polysilicon layer from the viewpoint of chemical stability at a high temperature and ease of design of the sheet resistance.
氮化鉭層可藉由改變其組成來改變薄膜電阻。The tantalum nitride layer can change the sheet resistance by changing its composition.
導電性多晶矽層可藉由改變雜質濃度等來改變薄膜電阻。導電性多晶矽層可藉由高濃度摻雜有n型雜質或p型雜質的n型多晶矽層或p型多晶矽層來構成。The conductive polysilicon layer can change the sheet resistance by changing the impurity concentration or the like. The conductive polysilicon layer can be formed by an n-type polysilicon layer or a p-type polysilicon layer doped with an n-type impurity or a p-type impurity at a high concentration.
將導電性多晶矽層定為n型多晶矽層，並採用例如磷來作為n型雜質時，只要將雜質濃度適當設定在1×1018 cm-3 ~5×1020 cm-3 左右的範圍即可。When the conductive polycrystalline germanium layer is an n-type polycrystalline germanium layer and phosphorus is used as the n-type impurity, the impurity concentration may be appropriately set within a range of about 1 × 10 18 cm -3 to 5 × 10 20 cm -3 . .
又，將導電性多晶矽層定為p型多晶矽層，並採用例如硼來作為p型雜質時，只要將雜質濃度適當設定在1×1018 cm-3 ~1×1020 cm-3 左右的範圍即可。Further, when the conductive polycrystalline germanium layer is a p-type polycrystalline germanium layer and boron is used as a p-type impurity, for example, the impurity concentration is appropriately set to a range of about 1 × 10 18 cm -3 to 1 × 10 20 cm -3 . Just fine.
另，就發熱體層4的材料而言，從防止源自於伴隨著基板2與發熱體層4之線膨脹係數差異的熱應力使得發熱體層4受到破壞之觀點而言，宜為與基板2的材料之線膨脹係數差異小的材料。In addition, as for the material of the heating body layer 4, from the viewpoint of preventing thermal stress caused by the difference in linear expansion coefficient between the substrate 2 and the heating element layer 4 from being damaged, the material of the substrate 2 is preferable. A material with a small difference in linear expansion coefficient.
在紅外線放射元件1中從發熱體層4放射的紅外線之峰頂波長λ依存於發熱體層4的溫度。在此，若將發熱體層4的絶對溫度定為T[K]，將峰頂波長定為λ[μm]，則峰頂波長λ成為λ=2898/T，發熱體層4的絶對溫度T與從發熱體層4放射的紅外線之峰頂波長λ之關係滿足維恩位移定律。總而言之，在紅外線放射元件1中，發熱體層4構成黑體。藉此，將紅外線放射元件1推測為，發熱體層4的單位面積於單位時間所放射的全能量E大致正比於T4者(亦即，推測為滿足史蒂芬-波茲曼定律者)。The peak top wavelength λ of the infrared rays emitted from the heating element layer 4 in the infrared radiation element 1 depends on the temperature of the heating element layer 4. Here, when the absolute temperature of the heating element layer 4 is set to T[K] and the peak top wavelength is set to λ [μm], the peak top wavelength λ becomes λ=2898/T, and the absolute temperature T of the heating element layer 4 and the The relationship between the peak wavelength λ of the infrared rays emitted from the heating body layer 4 satisfies the Wien's displacement law. In summary, in the infrared radiation element 1, the heating element layer 4 constitutes a black body. Thereby, the infrared radiation element 1 is presumed to be that the total energy E emitted per unit area of the heating element layer 4 per unit time is substantially proportional to T4 (that is, it is estimated that the Steve-Bozemann law is satisfied).
紅外線放射元件1係例如可藉由調整從未圖示的外部電源給予成對之電極9、9間的輸入電力，來改變於發熱體層4產生的焦耳熱，改變發熱體層4之溫度。所以，紅外線放射元件1可因應於給予發熱體層4的輸入電力來改變發熱體層4的溫度，又，可利用改變發熱體層4之溫度來改變從發熱體層4放射的紅外線之峰頂波長λ。The infrared radiation element 1 can change the Joule heat generated in the heating element layer 4 by, for example, adjusting the input power between the pair of electrodes 9 and 9 by an external power source (not shown), and change the temperature of the heating element layer 4. Therefore, the infrared radiation element 1 can change the temperature of the heat generating body layer 4 in response to the input power given to the heat generating body layer 4, and can change the peak top wavelength λ of the infrared light emitted from the heat generating body layer 4 by changing the temperature of the heat generating body layer 4.
又，在本實施形態之紅外線放射元件1中，越提高發熱體層4的溫度可越增加紅外線的放射量。因此，紅外線放射元件1可使用在廣範圍的紅外線波長段作為高輸出的紅外線光源。例如，將紅外線放射元件1使用作為氣體偵測器之紅外光源時，藉由將接受紅外線的偵測器之光學濾片設計成使不同波長的多數紅外線穿透，而能利用氣體偵測器來偵測多種類的氣體。Further, in the infrared radiation element 1 of the present embodiment, the amount of infrared radiation can be increased as the temperature of the heating element layer 4 is increased. Therefore, the infrared radiation element 1 can be used as a high-output infrared light source over a wide range of infrared wavelength bands. For example, when the infrared radiation element 1 is used as an infrared light source of a gas detector, a gas detector can be utilized by designing an optical filter that receives an infrared ray detector to penetrate most of the infrared rays of different wavelengths. Detect multiple types of gases.
第2絕緣層5具有熱絕緣性及電絕緣性。第2絕緣層5在第1絕緣層3中的與基板2相反側(圖1(b)中的上側)配置成覆蓋發熱體層4。第2絕緣層5例如藉由矽氮化膜來構成。第2絕緣層5不限於此，亦可例如藉由矽氧化膜所構成，也可具有矽氧化膜與矽氮化膜之疊層構造。第2絕緣層5宜對於給予發熱體層4通電時從發熱體層4放射的期望波長甚至波長段的紅外線之穿透率高，但不一定要使穿透率100%。The second insulating layer 5 has thermal insulation properties and electrical insulation properties. The second insulating layer 5 is disposed so as to cover the heating element layer 4 on the side opposite to the substrate 2 (upper side in FIG. 1(b)) of the first insulating layer 3. The second insulating layer 5 is formed of, for example, a tantalum nitride film. The second insulating layer 5 is not limited thereto, and may be formed of, for example, a tantalum oxide film, or may have a laminated structure of a tantalum oxide film and a tantalum nitride film. The second insulating layer 5 preferably has a high transmittance of infrared rays of a desired wavelength or even a wavelength band radiated from the heating element layer 4 when the heating element layer 4 is energized, but the transmittance is not necessarily made 100%.
此外，發熱體層4宜設定有薄膜電阻，以抑制與第2絕緣層5所接的 氣體(例如空氣、氮氣等)之阻抗不匹配所致的紅外線之放射率降低。Further, the heating element layer 4 is preferably provided with a sheet resistance to suppress connection with the second insulating layer 5. The emissivity of the infrared rays due to the impedance mismatch of the gas (for example, air, nitrogen, etc.) is lowered.
例如，採用氮化鉭作為發熱體層4的材料時，可利用在藉由反應性濺鍍法而成膜出作為發熱體層4之基礎的氮化鉭層時的氮氣之分壓，來控制發熱體層4的薄膜電阻。總而言之，紅外線放射元件1在採用氮化鉭作為發熱體層4的材料時，可藉由改變氮化鉭層的組成來改變發熱體層4的薄膜電阻。For example, when tantalum nitride is used as the material of the heating element layer 4, the partial pressure of nitrogen gas when the tantalum nitride layer which is the basis of the heating element layer 4 is formed by the reactive sputtering method can be used to control the heating element layer. 4 sheet resistance. In summary, when the infrared radiation element 1 uses tantalum nitride as the material of the heat generating body layer 4, the sheet resistance of the heat generating body layer 4 can be changed by changing the composition of the tantalum nitride layer.
又，紅外線放射元件1在採用導電性多晶矽作為發熱體層4的材料時，可藉由改變作為發熱體層4之基礎的導電性多晶矽層之雜質濃度等來改變發熱體層4的薄膜電阻。就控制導電性多晶矽層之雜質濃度的方法而言，有在形成非摻雜的多晶矽層之後摻雜雜質的方法、於成膜時摻雜雜質的方法等。Further, when the conductive polysilicon is used as the material of the heating element layer 4, the infrared radiation element 1 can change the sheet resistance of the heating element layer 4 by changing the impurity concentration of the conductive polysilicon layer which is the basis of the heating element layer 4. As a method of controlling the impurity concentration of the conductive polysilicon layer, there are a method of doping impurities after forming a non-doped polysilicon layer, a method of doping impurities at the time of film formation, and the like.
紅外線放射元件1在第2絕緣層5與空氣即氣體相接的環境下，將薄膜電阻定為189Ω/□(189Ω/sq.)，可藉由與空氣之阻抗匹配，使紅外線的放射率為最大(50%)。The infrared radiation element 1 sets the sheet resistance to 189 Ω/□ (189 Ω/sq.) in an environment in which the second insulating layer 5 is in contact with air, that is, the radiation of the infrared ray is matched by the impedance of the air. Maximum (50%).
所以，為了抑制放射率的降低並確保有例如40%以上的放射率，只要將發熱體層4的薄膜電阻設定在73~493Ω/□的範圍即可。另，若將在期望使用溫度使放射率成為最大的薄膜電阻稱為規定薄膜電阻，則在期望使用溫度的發熱體層4之薄膜電阻宜設定在規定薄膜電阻±10%的範圍。Therefore, in order to suppress the decrease in emissivity and ensure an emissivity of, for example, 40% or more, the sheet resistance of the heating element layer 4 may be set in the range of 73 to 493 Ω/□. When the sheet resistance at which the emissivity is maximized at the desired use temperature is referred to as a predetermined sheet resistance, the sheet resistance of the heating element layer 4 at a desired use temperature is preferably set within a range of ±10% of the predetermined sheet resistance.
又，紅外線放射元件1宜考慮到由第1絕緣層3、發熱體層4、及第2絕緣層5所構成的三明治結構之應力平衡來分別設定第1絕緣層3及第2絕緣層5之材料或厚度等。藉此，紅外線放射元件1可提昇上述三明治結構之應力平衡，並能進一步抑制此三明治結構的翹曲或破損而能達到機械強度的進一步提昇。Further, the infrared radiation element 1 should preferably set the materials of the first insulating layer 3 and the second insulating layer 5 in consideration of the stress balance of the sandwich structure composed of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5. Or thickness, etc. Thereby, the infrared radiation element 1 can improve the stress balance of the sandwich structure described above, and can further suppress the warpage or breakage of the sandwich structure, thereby achieving further improvement in mechanical strength.
上述發熱體層4的厚度，從達成發熱體層4之低熱容量化的觀點而言， 宜定為0.2μm以下。The thickness of the heating element layer 4 is from the viewpoint of achieving a low heat capacity of the heating element layer 4, Should be set to 0.2μm or less.
第1絕緣層3的厚度、發熱體層4的厚度、及第2絕緣層5的厚度之總計厚度，從達成第1絕緣層3、發熱體層4、及第2絕緣層5之疊層構造的低熱容量化之觀點而言，例如宜設定在0.1μm~1μm左右的範圍，較佳者定為0.7μm以下。The total thickness of the thickness of the first insulating layer 3, the thickness of the heating element layer 4, and the thickness of the second insulating layer 5 is low from the laminated structure of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5. From the viewpoint of heat capacity, for example, it is preferably set to a range of about 0.1 μm to 1 μm, and preferably 0.7 μm or less.
紅外線放射元件1更具有：接觸部7，形成在發熱體層4中的與第1絕緣層3相反側(圖1(b)中的上側)。尤其，在本實施形態中形成有成對之接觸部7。成對之接觸部7(7A)、7(7B)在基板2的上述一表面2b側，形成為與發熱體層4的周部(圖1(a)中的左右兩端部)相接的形式。各接觸部7通過形成於第2絕緣層5的接觸孔5a而形成於發熱體層4上，與發熱體層4電性連接。在此，各接觸部7係與發熱體層4成為歐姆接觸。亦即，接觸部7係形成為與發熱體層4進行歐姆接觸。The infrared radiation element 1 further includes a contact portion 7 formed on the opposite side of the first insulating layer 3 in the heat generating body layer 4 (upper side in FIG. 1(b)). In particular, in the present embodiment, a pair of contact portions 7 are formed. The pair of contact portions 7 (7A) and 7 (7B) are formed on the side of the one surface 2b of the substrate 2 so as to be in contact with the peripheral portion of the heat generating body layer 4 (left and right end portions in Fig. 1(a)). . Each of the contact portions 7 is formed on the heating element layer 4 through the contact hole 5a formed in the second insulating layer 5, and is electrically connected to the heating element layer 4. Here, each contact portion 7 is in ohmic contact with the heating element layer 4. That is, the contact portion 7 is formed in ohmic contact with the heat generating body layer 4.
紅外線放射元件1中，發熱體層4的俯視形狀係矩形，並將成對之接觸部7、7的俯視形狀定為分別沿著發熱體層4的平行之2個邊的帶狀形狀。進一步說明時，紅外線放射元件1係將成對之接觸部7、7的俯視形狀定為沿著正交於成對之電極9、9的排列方向之各邊的帶狀形狀。In the infrared radiation element 1, the heat generating body layer 4 has a rectangular shape in plan view, and the planar shape of the pair of contact portions 7 and 7 is defined as a strip shape along two parallel sides of the heat generating body layer 4. Further, in the infrared radiation element 1 , the planar shape of the pair of contact portions 7 and 7 is defined as a strip shape along each side orthogonal to the arrangement direction of the pair of electrodes 9 and 9.
就各接觸部7的材料而言，如後所述，宜使用高熔點材料。例如，接觸部7係藉由鉭來形成。另，接觸部7的材料不一定要係高熔點材料，亦可係鋁或鋁合金(例如Al-Si、Al-Cu)。各接觸部7的材料並無特別限定，例如亦可採用金、銅等。又，各接觸部7只要至少與發熱體層4相接的部分係可與發熱體層4歐姆接觸的材料即可，不限於單層構造，亦可係多層構造。例如，各接觸部7亦可作為在厚度方向上從發熱體層4側依序疊層有第1層、第2層、第3層的3層構造，將接於發熱體層4的第1層之材料定為高熔點金屬(例如鉻等)，將第2層之材料定為鎳，將第3層之材料定為金。As the material of each contact portion 7, as will be described later, a high melting point material is preferably used. For example, the contact portion 7 is formed by ruthenium. Further, the material of the contact portion 7 does not have to be a high melting point material, and may be aluminum or an aluminum alloy (for example, Al-Si, Al-Cu). The material of each contact portion 7 is not particularly limited, and for example, gold, copper, or the like can also be used. Further, each of the contact portions 7 may be a material that is in contact with the heating element layer 4 at least in an ohmic contact with the heating element layer 4, and is not limited to a single layer structure, and may have a multilayer structure. For example, each of the contact portions 7 may have a three-layer structure in which the first layer, the second layer, and the third layer are sequentially laminated from the side of the heat generating body layer 4 in the thickness direction, and the first layer of the heat generating layer 4 is connected. The material is designated as a high melting point metal (e.g., chromium, etc.), the material of the second layer is designated as nickel, and the material of the third layer is designated as gold.
電極9包含第1電極9(9A)與第2電極9(9B)。各電極9(9A、9B)如上述方式配置於支持部6S。亦即，電極9配置於基板2上，俾在基準面中位於開口部2a的外側。亦即，電極9配置於基板2上在厚度方向與開口部2a不重疊的區域(與支持部6S重疊、不與隔膜部6D重疊的區域)。The electrode 9 includes a first electrode 9 (9A) and a second electrode 9 (9B). Each of the electrodes 9 (9A, 9B) is disposed in the support portion 6S as described above. That is, the electrode 9 is disposed on the substrate 2, and the crucible is located outside the opening 2a in the reference plane. In other words, the electrode 9 is disposed on a region of the substrate 2 that does not overlap the opening portion 2a in the thickness direction (a region that overlaps the support portion 6S and does not overlap the diaphragm portion 6D).
第1電極9A與第2電極9B在基準面內沿著開口部2a的一邊之既定方向(圖1(a)中的左右方向)上配置於開口部2a的兩側。又，各電極9形成有以俯視中正交於兩電極9的排列方向之方向定為長邊方向的方塊狀(長方形狀)形狀。又，各電極9將長度尺寸設定為橫越隔膜部6D的2個對角線之延長線。The first electrode 9A and the second electrode 9B are disposed on both sides of the opening 2a in a predetermined direction (the horizontal direction in FIG. 1(a)) along one side of the opening 2a in the reference plane. Further, each of the electrodes 9 is formed in a square (rectangular) shape which is defined as a longitudinal direction in a direction orthogonal to the direction in which the electrodes 9 are arranged in plan view. Further, each electrode 9 has a length dimension that is an extension of two diagonal lines across the diaphragm portion 6D.
配線8形成為將電極9電性連接至發熱體層4。配線8在發熱體層4與各電極9之間每者設置2個。亦即，通電部11包含4條配線8(81~84)。4條配線8分別在基準面中形成為通過發熱體層4之第2角40與最靠近該第2角40的開口部2a之角(第1角)20的直線狀。亦即，配線81、82、83、84分別通過發熱體層4之第2角41、42、43、44，與最靠近該第2角41、41、42、43的開口部2a之角21、22、23、24。在本實施形態中，開口部2a及發熱體層4係相似形狀，中心的位置彼此相等。因此，配線8係沿著隔膜部6D的對角線來配置。The wiring 8 is formed to electrically connect the electrode 9 to the heat generating body layer 4. The wiring 8 is provided between the heating element layer 4 and each of the electrodes 9 in two. That is, the energizing portion 11 includes four wirings 8 (81 to 84). Each of the four wirings 8 is formed in a linear shape passing through the second corner 40 of the heat generating body layer 4 and the corner (first corner) 20 closest to the opening 2a of the second corner 40 in the reference plane. That is, the wirings 81, 82, 83, and 84 pass through the second corners 41, 42, 43, and 44 of the heating element layer 4, respectively, and the corner 21 of the opening 2a closest to the second corners 41, 41, 42, and 43, 22, 23, 24. In the present embodiment, the opening portion 2a and the heat generating body layer 4 have similar shapes, and the positions of the centers are equal to each other. Therefore, the wiring 8 is arranged along the diagonal line of the diaphragm portion 6D.
各配線8為長邊方向的一端部(第1端部)8a與接觸部7連接，另一端部(第2端部)8b與電極9連接。亦即，配線8經由接觸部7而電性連接至發熱體層4。Each of the wires 8 is connected to the contact portion 7 at one end portion (first end portion) 8a in the longitudinal direction, and the other end portion (second end portion) 8b is connected to the electrode 9. That is, the wiring 8 is electrically connected to the heat generating body layer 4 via the contact portion 7.
配線8的線寬度(寬度尺寸)定為固定。例如分別為：配線81的第1端部8a連接於接觸部7A的一端(圖1(a)中的上端)，配線82的第1端部8a連接於接觸部7A的另一端(圖1(a)中的下端)。且分別為：配線83的第1端部8a連接於接觸部7B的一端(圖1(a)中的上端)，配線84的第1端部8a連接於接觸部7B的另一端(圖1(a)中的下端)。The line width (width size) of the wiring 8 is fixed. For example, the first end portion 8a of the wiring 81 is connected to one end of the contact portion 7A (upper end in FIG. 1(a)), and the first end portion 8a of the wiring 82 is connected to the other end of the contact portion 7A (FIG. 1 (FIG. 1) The lower end of a)). Further, the first end portion 8a of the wiring 83 is connected to one end of the contact portion 7B (upper end in FIG. 1(a)), and the first end portion 8a of the wiring 84 is connected to the other end of the contact portion 7B (FIG. 1 (FIG. 1) The lower end of a)).
如圖1(a)所示，第1電極9A連接至分別對應於4個角20之中最靠近第1電極9A的2個角21、22之配線81、82。第2電極9B連接至分別對應於4個角20之中最靠近第2電極9B的2個角23、24之配線83、84。另，對應於角20的配線8，定義為通過角20上的配線8(在厚度方向上與角20重疊的配線8)。As shown in FIG. 1(a), the first electrode 9A is connected to the wirings 81 and 82 corresponding to the two corners 21 and 22 of the four corners 20 which are closest to the first electrode 9A. The second electrode 9B is connected to the wirings 83 and 84 corresponding to the two corners 23 and 24 of the four corners 20 which are closest to the second electrode 9B. Further, the wiring 8 corresponding to the corner 20 is defined as a wiring 8 passing through the corner 20 (the wiring 8 overlapping the corner 20 in the thickness direction).
本實施形態的紅外線放射元件1為由配線8與電極9所構成的通電部11通過隔膜部6D的各角落部上。在此，在本實施形態的紅外線放射元件1中，4條配線8(81~84)的另一端部(第2端部)8b通過隔膜部6D的4個角落部60(61~64)上。In the infrared radiation element 1 of the present embodiment, the energizing portion 11 composed of the wiring 8 and the electrode 9 passes through each corner portion of the diaphragm portion 6D. Here, in the infrared radiation element 1 of the present embodiment, the other end portion (second end portion) 8b of the four wirings 8 (81 to 84) passes through the four corner portions 60 (61 to 64) of the diaphragm portion 6D. .
如此，本實施形態之紅外線放射元件1包含：通電部11，配置於第2絕緣層5中的與基板2相反側(圖1(b)中的上側)，並電性連接於發熱體層4。在本實施形態中，配線8的第2端部8b成為在厚度方向與開口部2a之角20(亦即，隔膜部6D的角落部60)重疊的補強部。亦即，4條配線8分別包含對應的4個補強部(第2端部8b)。所以，通電部11具有分別對應於4個角20(21、22、23、24)的4個補強部(第2端部8b)。As described above, the infrared radiation element 1 of the present embodiment includes the energization portion 11 and is disposed on the opposite side of the substrate 2 (the upper side in FIG. 1(b)) of the second insulating layer 5, and is electrically connected to the heating element layer 4. In the present embodiment, the second end portion 8b of the wiring 8 is a reinforcing portion that overlaps the corner 20 of the opening portion 2a (that is, the corner portion 60 of the diaphragm portion 6D) in the thickness direction. That is, each of the four wires 8 includes four corresponding reinforcing portions (second end portions 8b). Therefore, the energizing portion 11 has four reinforcing portions (second end portions 8b) corresponding to the four corners 20 (21, 22, 23, 24).
各配線8及各電極9藉由與各接觸部7相同的材料來形成，宜設定成相同的層構造、相同的厚度。藉此，紅外線放射元件1可將各配線8及各電極9與各接觸部7同時形成。Each of the wirings 8 and the electrodes 9 is formed of the same material as each of the contact portions 7, and is preferably set to have the same layer structure and the same thickness. Thereby, the infrared radiation element 1 can simultaneously form the respective wirings 8 and the respective electrodes 9 and the respective contact portions 7.
各電極9構成了接墊。因此，電極9的厚度宜設定在0.5~2μm左右的範圍。Each electrode 9 constitutes a pad. Therefore, the thickness of the electrode 9 is preferably set in the range of about 0.5 to 2 μm.
在紅外線放射元件1的製造中，例如只要在基板2的上述一表面2b側依序逐次形成第1絕緣層3、發熱體層4、及第2絕緣層5之後，在第2絕緣層5形成接觸孔5a，其後形成各接觸部7、各配線8及各電極9，再於基板2形成開口部2a即可。In the manufacture of the infrared radiation element 1, for example, the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 are sequentially formed on the one surface 2b side of the substrate 2, and then the second insulating layer 5 is brought into contact. The hole 5a is formed with each contact portion 7, each wiring 8 and each electrode 9, and the opening portion 2a is formed on the substrate 2.
第1絕緣層3之矽氧化膜的形成方法，例如可採用熱氧化法或CVD(Chemical Vapor Deposition，化學氣相沉積)法等薄膜形成技術，宜為熱氧化法。又，第1絕緣層3之矽氮化膜的形成方法可利用CVD法等薄膜形成技術，宜為LPCVD(Low Pressure Chemical Vapor Deposition，低壓化學氣相沉積)法。As a method of forming the tantalum oxide film of the first insulating layer 3, for example, a thin film forming technique such as a thermal oxidation method or a CVD (Chemical Vapor Deposition) method may be employed, and a thermal oxidation method is preferred. Further, the method for forming the tantalum nitride film of the first insulating layer 3 can be a thin film forming technique such as a CVD method, and is preferably a LPCVD (Low Pressure Chemical Vapor Deposition) method.
發熱體層4的形成方法，例如可使用濺鍍法、蒸鍍法或CVD法等薄膜形成技術，以及利用光微影技術及蝕刻技術的加工技術。As a method of forming the heating body layer 4, for example, a film forming technique such as a sputtering method, a vapor deposition method, or a CVD method, or a processing technique using a photolithography technique and an etching technique can be used.
第2絕緣層5的形成方法，例如可使用CVD法等薄膜形成技術，以及利用光微影技術及蝕刻技術的加工技術。就形成第2絕緣層5時的CVD法而言，宜為電漿CVD法。As a method of forming the second insulating layer 5, for example, a thin film forming technique such as a CVD method or a processing technique using a photolithography technique and an etching technique can be used. The CVD method in forming the second insulating layer 5 is preferably a plasma CVD method.
在形成接觸孔5a時，只要利用光微影技術及蝕刻技術即可。When the contact hole 5a is formed, it is only necessary to use a photolithography technique and an etching technique.
又，在形成各接觸部7、各配線8及各電極9時，例如可使用濺鍍法、蒸鍍法及CVD法等薄膜形成技術，以及利用光微影技術及蝕刻技術的加工技術。Further, when forming each of the contact portions 7, the respective wirings 8, and the respective electrodes 9, for example, a thin film forming technique such as a sputtering method, a vapor deposition method, or a CVD method, or a processing technique using a photolithography technique and an etching technique can be used.
又，在形成開口部2a時，只要藉由將基板2的另一表面2c側之矽氧化膜與矽氮化膜之疊層膜(未圖示)作為遮罩層，並從另一表面2c側蝕刻基板2來形成即可。Further, when the opening 2a is formed, a laminated film (not shown) of a tantalum oxide film and a tantalum nitride film on the other surface 2c side of the substrate 2 is used as a mask layer, and from the other surface 2c. The substrate 2 may be etched side by side.
在形成遮罩層時，例如，首先，在與第1絕緣層3之矽氧化膜的形成同時，於基板2的另一表面2c側形成作為遮罩層之基礎的矽氧化膜，並在與第1絕緣層3之矽氮化膜的形成同時，於基板2的另一表面2c側形成矽氮化膜。作為遮罩層之基礎的矽氧化膜與矽氮化膜之疊層膜的圖案化只要利用光微影技術及蝕刻技術即可。When the mask layer is formed, for example, first, a tantalum oxide film as a foundation of the mask layer is formed on the other surface 2c side of the substrate 2 at the same time as the formation of the tantalum oxide film of the first insulating layer 3, and At the same time as the formation of the tantalum nitride film of the first insulating layer 3, a tantalum nitride film is formed on the other surface 2c side of the substrate 2. The patterning of the laminated film of the tantalum oxide film and the tantalum nitride film, which is the basis of the mask layer, may be performed by photolithography and etching.
在本實施形態的紅外線放射元件1之製造方法中，於開口部2a的形成 時，利用第1絕緣層3作為蝕刻阻擋層，可藉以提高第1絕緣層3的厚度之精度，並且可防止基板2的一部分或殘渣殘留於第1絕緣層3中的開口部2a側。在此製造方法中，可抑制每個紅外線放射元件1的第1絕緣層3之機械強度的偏差，及第1絕緣層3的隔膜部6D整體之熱容量的偏差。In the method of manufacturing the infrared radiation element 1 of the present embodiment, the formation of the opening 2a In the case where the first insulating layer 3 is used as the etching stopper, the thickness of the first insulating layer 3 can be improved, and a part of the substrate 2 or the residue can be prevented from remaining on the opening 2a side of the first insulating layer 3. In this manufacturing method, variations in the mechanical strength of the first insulating layer 3 of each of the infrared radiation elements 1 and variations in the heat capacity of the entire diaphragm portion 6D of the first insulating layer 3 can be suppressed.
在上述紅外線放射元件1的製造中，只要在晶圓層級下進行在開口部2a的形成結束之前的製程，並在形成開口部2a之後分離成各個紅外線放射元件1即可。亦即，在紅外線放射元件1的製造中，例如只要準備作為基板2之基礎的矽晶圓，並在該矽晶圓依照上述製造方法形成多數之紅外線偵測元件1，其後分離成各個紅外線偵測元件1即可。In the manufacture of the infrared radiation element 1 described above, the process before the formation of the opening 2a is completed at the wafer level, and the infrared radiation element 1 may be separated after forming the opening 2a. In other words, in the manufacture of the infrared radiation element 1, for example, a germanium wafer as a base of the substrate 2 is prepared, and a plurality of infrared detecting elements 1 are formed in the germanium wafer according to the above-described manufacturing method, and then separated into individual infrared rays. The component 1 can be detected.
從上述的紅外線放射元件1之製造方法可知，紅外線放射元件1可利用MEMS的製造技術來製造。As is apparent from the above-described method of manufacturing the infrared radiation element 1, the infrared radiation element 1 can be manufactured by the manufacturing technique of MEMS.
如以上所說明，本實施形態的紅外線放射元件1包含：基板2；薄膜構造部6，具有發熱體層4；開口部2a，貫穿基板2的厚度方向，開口形狀為矩形；成對之電極9、9，電性連接於發熱體層4；及配線8，將各電極9分別與發熱體層4電性連接。並且，薄膜構造部6包含：臨於開口部2a的矩形之隔膜部6D；及圍繞隔膜部6D的框架狀之支持部6S。又，紅外線放射元件1為，隔膜部6D在中央部具有第1絕緣層3、發熱體層4、及第2絕緣層5之疊層構造，隔膜部6D的周部與支持部6S具有第1絕緣層3及第2絕緣層5之疊層構造，各電極9配置於支持部6S，由各配線8與各電極9所構成的通電部通過隔膜部6D的各角落部上。As described above, the infrared radiation element 1 of the present embodiment includes the substrate 2, the thin film structure portion 6 having the heat generating body layer 4, and the opening portion 2a having a rectangular shape in the thickness direction of the substrate 2; the pair of electrodes 9, 9. Electrically connected to the heating element layer 4; and the wiring 8 is electrically connected to each of the electrodes 9 and the heating element layer 4. Further, the film structure portion 6 includes a rectangular diaphragm portion 6D that is adjacent to the opening portion 2a, and a frame-shaped support portion 6S that surrounds the diaphragm portion 6D. Further, in the infrared radiation element 1, the diaphragm portion 6D has a laminated structure of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 at the center portion, and the peripheral portion of the diaphragm portion 6D and the support portion 6S have the first insulation. In the laminated structure of the layer 3 and the second insulating layer 5, each of the electrodes 9 is disposed in the support portion 6S, and the energized portions formed by the respective wires 8 and the respective electrodes 9 pass through the respective corner portions of the diaphragm portion 6D.
換言之，本實施形態的紅外線放射元件1具有以下的第1特徵。在第1特徵中，紅外線放射元件1包含：基板2；開口部2a；第1絕緣層3；發熱體層4；第2絕緣層5；及通電部11。基板2具有正交於厚度方向(圖1(b)中的上下方向)的一表面2b。開口部2a在厚度方向(圖1(b)中的上下方向)上貫穿基板2。第1絕緣層3在基板2的一表面2b配置成覆蓋開口部2a。發熱體層4配置於第1絕緣層3中的與基板2相反側(圖1(b)中的上側)，俾 在平行於基板2的一表面2b之基準面中位於開口部2a的內側。第2絕緣層5在第1絕緣層3中的與基板2相反側配置成覆蓋發熱體層4。通電部11配置於第2絕緣層5中的與基板2相反側，電性連接於發熱體層4。開口部2a係如下形狀：在平行於一表面2b的基準面內具有角(第1角)20。通電部11具有在厚度方向與開口部2a的角20重疊的補強部(在本實施形態中為配線8的第2端部8b)。In other words, the infrared radiation element 1 of the present embodiment has the following first feature. In the first feature, the infrared radiation element 1 includes a substrate 2, an opening 2a, a first insulating layer 3, a heating element layer 4, a second insulating layer 5, and an energizing portion 11. The substrate 2 has a surface 2b orthogonal to the thickness direction (up and down direction in Fig. 1(b)). The opening 2a penetrates the substrate 2 in the thickness direction (the vertical direction in FIG. 1(b)). The first insulating layer 3 is disposed on one surface 2b of the substrate 2 so as to cover the opening 2a. The heating body layer 4 is disposed on the opposite side of the substrate 2 in the first insulating layer 3 (upper side in FIG. 1(b)), The reference surface parallel to the surface 2b of the substrate 2 is located inside the opening portion 2a. The second insulating layer 5 is disposed so as to cover the heating element layer 4 on the side opposite to the substrate 2 in the first insulating layer 3. The energizing portion 11 is disposed on the opposite side of the substrate 2 in the second insulating layer 5, and is electrically connected to the heating element layer 4. The opening 2a has a shape having an angle (first angle) 20 in a reference plane parallel to one surface 2b. The energizing portion 11 has a reinforcing portion that overlaps the corner 20 of the opening portion 2a in the thickness direction (in the present embodiment, the second end portion 8b of the wiring 8).
又，本實施形態的紅外線放射元件1在第1特徵以外還具有以下第2~10特徵。另，以下的第2~10特徵係任意特徵。Further, the infrared radiation element 1 of the present embodiment has the following second to tenth features in addition to the first feature. In addition, the following 2nd to 10th features are arbitrary features.
第2特徵係如第1特徵，其中第1絕緣層3、發熱體層4、及第2絕緣層5就整體而言具有拉伸應力。The second feature is the first feature, wherein the first insulating layer 3, the heating element layer 4, and the second insulating layer 5 have tensile stress as a whole.
第3特徵係如第1或第2特徵，其中通電部11包含：電極9；及配線8。電極9配置基板2上，且在基準面位於開口部2a的外側。配線8使電極9電性連接於發熱體層4。The third feature is the first or second feature, wherein the energizing portion 11 includes the electrode 9 and the wiring 8. The electrode 9 is disposed on the substrate 2 and is located outside the opening 2a on the reference surface. The wiring 8 electrically connects the electrode 9 to the heating element layer 4.
第4特徵係如第3特徵，其中開口部2a係具有4個角20(21~24)的矩形或正方形。通電部11具有分別對應於4個角21~24的4個補強部(在本實施形態為配線81~84的第2端部8b)。The fourth feature is the third feature, wherein the opening 2a has a rectangular or square shape of four corners 20 (21 to 24). The energizing portion 11 has four reinforcing portions (the second end portions 8b of the wirings 81 to 84 in the present embodiment) corresponding to the four corners 21 to 24, respectively.
第5特徵係如第4特徵，其中通電部11具有4條配線8(81~84)。4條配線81~84分別包含對應的4個補強部(在本實施形態為第2端部8b)。The fifth feature is the fourth feature, wherein the energizing portion 11 has four wires 8 (81 to 84). Each of the four wirings 81 to 84 includes four corresponding reinforcing portions (in the present embodiment, the second end portion 8b).
第6特徵係如第5特徵，其中電極9包含第1電極9(9A)與第2電極9(9B)。第1電極9A與第2電極9B在基準面內沿著開口部2a的一邊之既定方向(圖1(a)中的左右方向)上配置於開口部2a的兩側。第1電極9A連接至分別對應於4個角20之中接近第1電極9A之2個角21、22的配線81、82。第2電極9B連接至分別對應於4個角20之中靠近第2電極9B之2個角23、24的配線83、84。The sixth feature is the fifth feature, wherein the electrode 9 includes the first electrode 9 (9A) and the second electrode 9 (9B). The first electrode 9A and the second electrode 9B are disposed on both sides of the opening 2a in a predetermined direction (the horizontal direction in FIG. 1(a)) along one side of the opening 2a in the reference plane. The first electrode 9A is connected to the wirings 81 and 82 corresponding to the two corners 21 and 22 of the first electrode 9A among the four corners 20, respectively. The second electrode 9B is connected to the wirings 83 and 84 respectively corresponding to the two corners 23 and 24 of the second electrode 9B among the four corners 20.
第7特徵係如第5或第6特徵，其中發熱體層4係在基準面中具有4個角(第2角)40(41~44)的矩形或正方形。發熱體層4在基準面中具有分別與開口部2a的四邊平行的四邊。4條配線8(81~84)分別形成在基準面通過發熱體層4的第2角40與最靠近該第2角40的開口部2a之角20的直線狀。The seventh feature is the fifth or sixth feature, wherein the heat generating body layer 4 is a rectangle or a square having four corners (second angle) 40 (41 to 44) in the reference plane. The heating body layer 4 has four sides parallel to the four sides of the opening 2a in the reference plane. The four wirings 8 (81 to 84) are formed in a linear shape in which the reference surface passes through the second corner 40 of the heating element layer 4 and the corner 20 of the opening 2a closest to the second angle 40.
第8特徵係如第1~第7特徵的其中任一者，其中藉由高熔點材料來形成配線8。The eighth feature is any one of the first to seventh features, wherein the wiring 8 is formed by a high melting point material.
第9特徵係如第8特徵，其中藉由具有高熔點材料以上之熔點的材料來形成發熱體層4。The ninth feature is the eighth feature, wherein the heat generating body layer 4 is formed by a material having a melting point higher than a material having a high melting point.
第10特徵係如第9特徵，其中藉由鉭來形成配線8。並藉由氮化鉭來形成發熱體層4。The tenth feature is the ninth feature in which the wiring 8 is formed by ruthenium. The heating element layer 4 is formed by tantalum nitride.
第11特徵係如第1~第10特徵的其中任一者，其中第1絕緣層3及第2絕緣層5具有熱絕緣性及電絕緣性。發熱體層4構成為藉由通電來放射紅外線。第1絕緣層3、發熱體層4、及第2絕緣層5構成為薄膜構造部6。薄膜構造部6具有：隔膜部6D，配置於開口部2a上；及支持部6S，配置基板2上並連結於隔膜部6D。The eleventh feature is any one of the first to tenth aspects, wherein the first insulating layer 3 and the second insulating layer 5 have thermal insulation properties and electrical insulation properties. The heating body layer 4 is configured to emit infrared rays by energization. The first insulating layer 3, the heating element layer 4, and the second insulating layer 5 are configured as a thin film structure portion 6. The film structure portion 6 has a diaphragm portion 6D disposed on the opening portion 2a, and a support portion 6S on which the substrate 2 is placed and connected to the diaphragm portion 6D.
並且，本實施形態之紅外線放射元件1，可藉由在第1絕緣層3上形成有發熱體層4來提高熱絕緣性而能達成高輸出化，且藉由通電部通過隔膜部6D的各角落部上，利用通電部來補強隔膜部6D而能達成可靠度之提昇。亦即，本實施形態的紅外線放射元件1中，能達成高輸出化，且能達成可靠度之提昇。Further, in the infrared radiation element 1 of the present embodiment, the heat generating layer 4 is formed on the first insulating layer 3, whereby the heat insulating property can be improved, and the output can be increased, and the energized portion can pass through the corners of the diaphragm portion 6D. In the upper portion, the diaphragm portion 6D is reinforced by the energizing portion, and the reliability can be improved. In other words, in the infrared radiation element 1 of the present embodiment, high output can be achieved, and reliability can be improved.
又，紅外線放射元件1因為可藉由通電部11來補強隔膜部6D，所以不必另外形成補強膜來補強隔膜部6D，而能達成低成本化。Further, since the infrared radiation element 1 can reinforce the diaphragm portion 6D by the energizing portion 11, it is not necessary to separately form the reinforcing film to reinforce the diaphragm portion 6D, and the cost can be reduced.
又，將電極7與接墊9加以連接的2條配線8，分別連接至正交於俯視中成對之接墊9、9的排列方向之方向中的發熱體層4之兩端部。藉此，本實施形態之紅外線放射元件1因為在發熱體層4、與各電極9之間每者具有2條配線8，相較於每者1條配線8之情況而言，能達成在發熱體層4流動的電流之電流密度的均勻化。Further, the two wires 8 connecting the electrode 7 and the pad 9 are respectively connected to both end portions of the heat generating body layer 4 in the direction orthogonal to the direction in which the pads 9 and 9 of the pair of pads 9 and 9 are arranged in plan view. Thus, the infrared radiation element 1 of the present embodiment has two wirings 8 between the heating element layer 4 and each of the electrodes 9, and can be realized in the heating element layer as compared with each of the wirings 8 4 The uniformity of the current density of the flowing current.
又，紅外線放射元件1中，隔膜部6D伴隨著發熱體層4的膨脹、收縮而變形，對於各配線8等施加機械性應力。但是，在本實施形態的紅外線放射元件1中，因為每者具有2個將發熱體層4與電極9加以連接的配線8，所以即使2條配線8之中的一個斷線也能使用，而能達成可靠度之提昇及長壽命化。In the infrared radiation element 1, the diaphragm portion 6D is deformed by expansion and contraction of the heating element layer 4, and mechanical stress is applied to each of the wirings 8 and the like. However, in the infrared radiation element 1 of the present embodiment, since each of the two wirings 8 that connect the heating element layer 4 and the electrode 9 is provided, even if one of the two wirings 8 is broken, it can be used. Achieve reliability and long life.
又，紅外線放射元件1中，因為隔膜部6D係第1絕緣層3、發熱體層4、及第2絕緣層5之疊層構造，所以可減低隔膜部6D的熱容量，且能藉由如上述方式來設定發熱體層4的薄膜電阻以抑制發熱體層4的放射率之降低。Further, in the infrared radiation element 1, since the diaphragm portion 6D is a laminated structure of the first insulating layer 3, the heating element layer 4, and the second insulating layer 5, the heat capacity of the diaphragm portion 6D can be reduced, and the above-described manner can be achieved. The sheet resistance of the heating body layer 4 is set to suppress the decrease in the emissivity of the heating body layer 4.
所以，在本實施形態之紅外線放射元件1中，能夠低耗電化及使回應速度之高速化。另，紅外線放射元件1中，可藉由減低基板2的上述一表面側之疊層構造的熱容量，使發熱體層4對於給予成對之電極9、9間的電壓波形而言的溫度變化之回應變快而使發熱體層4的溫度變得容易上昇，而能達成高輸出化及回應速度之高速化。Therefore, in the infrared radiation element 1 of the present embodiment, it is possible to reduce power consumption and speed up the response speed. Further, in the infrared radiation element 1, the heat capacity of the laminated structure of the one surface side of the substrate 2 can be reduced, and the temperature change of the heating element layer 4 with respect to the voltage waveform between the pair of electrodes 9 and 9 can be returned. The strain is increased, and the temperature of the heating body layer 4 is easily increased, and the high output and the response speed can be increased.
又，紅外線放射元件1中，從單晶矽基板形成基板2，並利用矽氧化膜與矽氮化膜來構成第1絕緣層3。藉此，紅外線放射元件1因為基板2的熱容量及熱傳導率分別比第1絕緣層3更大，基板2具有作為散熱器的功能，所以能達成小型化、對於輸入電力而言的回應速度之高速化、紅外線的放射特性之穩定性的提昇。Further, in the infrared radiation element 1, the substrate 2 is formed from a single crystal germanium substrate, and the first insulating layer 3 is formed by a tantalum oxide film and a tantalum nitride film. In the infrared radiation element 1, since the heat capacity and the thermal conductivity of the substrate 2 are larger than those of the first insulating layer 3, and the substrate 2 has a function as a heat sink, it is possible to achieve a reduction in size and a high speed of response to input power. The stability of the radiation characteristics of the infrared rays is improved.
又，在紅外線放射元件1中，就發熱體層4的材料而言，採用比矽更高熔點的氮化鉭，只要構成隔膜體之非發熱體層4的構件(在實施形態1為第1絕緣層3、第2絕緣層5、接觸部7、及配線8)係比發熱體層4更高熔點，即能使發熱體層4的溫度上升昇直到構成基板2的矽之最高使用溫度(稍微低於矽的熔點之溫度)，相較於紅外線發光二極體而言，能大幅增加紅外線的放射量。Further, in the infrared radiation element 1, the material of the heating element layer 4 is a tantalum nitride having a higher melting point than that of the crucible, and the member which constitutes the non-heating body layer 4 of the diaphragm body (in the first embodiment, the first insulating layer) 3. The second insulating layer 5, the contact portion 7, and the wiring 8) have a higher melting point than the heating element layer 4, that is, the temperature of the heating element layer 4 rises up to the maximum use temperature of the crucible constituting the substrate 2 (slightly lower than 矽) The temperature of the melting point) can greatly increase the amount of infrared radiation compared to the infrared light-emitting diode.
又，紅外線放射元件1只要在各接觸部7中至少將接於發熱體層4的部位利用比矽更高熔點的金屬來形成，即能使發熱體層4的溫度上升而不受到各接觸部7的材料所制約。Further, the infrared radiation element 1 is formed by using at least a portion of the contact portion 7 that is connected to the heating element layer 4 with a metal having a higher melting point than that of the contact portion 7, that is, the temperature of the heating element layer 4 can be raised without being affected by the respective contact portions 7. Restricted by materials.
亦即，就構成隔膜體(隔膜部6D、發熱體層4、第2絕緣層5、接觸部7、及配線8)之非發熱體層4的構件(隔膜部6D、第2絕緣層5、接觸部7、及配線8)之材料而言，只要使用熔點比發熱體層4更高的材料，即能使發熱體層4的溫度上昇直到稍微低於發熱體層4的熔點之溫度。另，在此的發熱體層4之溫度係指發熱體層4的中心附近(重心附近)之溫度。In other words, the member (the diaphragm portion 6D, the second insulating layer 5, and the contact portion) constituting the non-heating body layer 4 of the diaphragm body (the diaphragm portion 6D, the heating element layer 4, the second insulating layer 5, the contact portion 7, and the wiring 8) 7. As for the material of the wiring 8), as long as a material having a higher melting point than the heating element layer 4 is used, the temperature of the heating body layer 4 can be raised to a temperature slightly lower than the melting point of the heating element layer 4. The temperature of the heating element layer 4 herein refers to the temperature in the vicinity of the center of the heating element layer 4 (near the center of gravity).
發熱體層4係利用高熔點材料(例如氮化鉭)來形成時，構成隔膜體之其他構件的材料(第1絕緣層3、第2絕緣層5、接觸部7、及配線8)宜同樣利用高熔點材料來形成。When the heating element layer 4 is formed of a high melting point material (for example, tantalum nitride), the materials constituting the other members of the diaphragm body (the first insulating layer 3, the second insulating layer 5, the contact portion 7, and the wiring 8) should be similarly utilized. High melting point materials are formed.
用於第1絕緣層3及第2絕緣層5的高熔點材料，例如係具有高熔點的絕緣物(二氧化矽、氮化矽)。The high melting point material used for the first insulating layer 3 and the second insulating layer 5 is, for example, an insulator having high melting point (cerium oxide or tantalum nitride).
用於接觸部7及配線8的高熔點材料，例如從具有高熔點的金屬(鉭、鎢、鉬等)、具有高熔點的貴金屬(鉑、釕、銥等)、及具有高熔點的導電性材料(單晶矽、多晶矽、單晶鍺、導電性碳)中選擇。尤其，配線8宜利用鉭來形成。又，接觸部7宜利用鉭來形成。另，配線8係利用具有高熔點的貴金屬來形成時，即使在配線8有一部分露出之情況下，也能抑制發熱體層4之溫度上昇時配線8受到氧化而電阻改變之情形。The high melting point material for the contact portion 7 and the wiring 8 is, for example, a metal having a high melting point (tantalum, tungsten, molybdenum, etc.), a noble metal having a high melting point (platinum, rhodium, ruthenium, etc.), and a conductivity having a high melting point. The material (single crystal germanium, polycrystalline germanium, single crystal germanium, conductive carbon) is selected. In particular, the wiring 8 is preferably formed using tantalum. Further, the contact portion 7 is preferably formed by using a crucible. When the wiring 8 is formed of a noble metal having a high melting point, even when a part of the wiring 8 is exposed, it is possible to suppress the wiring 8 from being oxidized and changing the electric resistance when the temperature of the heating element layer 4 rises.
另，高熔點材料只要具有比基板2之材料更高的熔點即可。例如，基板2的材料為矽時，高熔點材料採用熔點比矽更高的材料。Further, the high melting point material may have a higher melting point than the material of the substrate 2. For example, when the material of the substrate 2 is tantalum, the high melting point material uses a material having a higher melting point than ruthenium.
又，構成隔膜體的構件之中，非發熱體層4的構件係比發熱體層4更低熔點時，可使發熱體層4之溫度(發熱體層4的中心附近之溫度)，上昇直到比構成隔膜體的構件之中熔點最小的材料之熔點稍微低的溫度。Further, among the members constituting the diaphragm body, when the member of the non-heating body layer 4 has a lower melting point than the heating element layer 4, the temperature of the heating element layer 4 (temperature near the center of the heating element layer 4) can be raised until the ratio constitutes the diaphragm body. Among the components, the melting point of the material having the lowest melting point is slightly lower.
在此，發熱體層4中，越靠近發熱體層4之周部的部位放熱越大。又，發熱體層4越靠近基板2的開口部2a之緣部的部位越容易大幅放熱。因此，發熱體層4的周部之溫度，比發熱體層4的中心之溫度更低。並且，接觸於發熱體層4之周部的接觸部7及配線8在接觸於發熱體層4的部位或其附近成為與發熱體層4之周部大致相同的溫度。Here, in the heat generating body layer 4, the heat release to the portion closer to the peripheral portion of the heat generating body layer 4 is increased. Further, the portion of the heat generating body layer 4 that is closer to the edge portion of the opening portion 2a of the substrate 2 is more likely to emit heat. Therefore, the temperature of the peripheral portion of the heating element layer 4 is lower than the temperature of the center of the heating element layer 4. Further, the contact portion 7 and the wiring 8 that are in contact with the peripheral portion of the heating element layer 4 have substantially the same temperature as the peripheral portion of the heating element layer 4 at or near the portion in contact with the heating element layer 4.
但是，如上所述，因為發熱體層4的周部之溫度稍微低於發熱體層4的中心附近之溫度，所以只要將發熱體層4的中心附近之溫度設定在比構成隔膜體的材料之中熔點最小的材料之熔點稍低的溫度，即能穩定使用紅外線放射元件1。However, as described above, since the temperature of the peripheral portion of the heat generating body layer 4 is slightly lower than the temperature near the center of the heat generating body layer 4, the temperature near the center of the heat generating body layer 4 is set to be the smallest among the materials constituting the diaphragm body. The infrared melting element 1 can be stably used at a temperature at which the melting point of the material is slightly lower.
紅外線放射元件1中，發熱體層4、接觸部7、配線8、及電極9宜將俯視中正交於成對之電極9、9的排列方向之紅外線放射元件1的中心線作為對稱軸來配置成線對稱。藉此，紅外線放射元件1能達成機械強度的進一步提昇，並且能抑制發熱體層4之溫度的面內偏差。In the infrared radiation element 1, the heating element layer 4, the contact portion 7, the wiring 8, and the electrode 9 are preferably arranged such that the center line of the infrared radiation element 1 orthogonal to the arrangement direction of the pair of electrodes 9 and 9 in the plan view is an axis of symmetry. Line symmetrical. Thereby, the infrared radiation element 1 can achieve further improvement in mechanical strength, and can suppress the in-plane variation of the temperature of the heating element layer 4.
(實施形態2)(Embodiment 2)
以下依據圖2來說明本實施形態之紅外線放射元件1。本實施形態之紅外線放射元件1係配線8及電極9的形狀與實施形態1之紅外線放射元件1不同。另，與實施形態1相同的構成要素係標註相同符號並省略說明。Hereinafter, the infrared radiation element 1 of the present embodiment will be described with reference to Fig. 2 . The shape of the infrared radiation element 1 wiring 8 and the electrode 9 of the present embodiment is different from that of the infrared radiation element 1 of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals and will not be described.
配線8形成為如下形狀：另一端部8b越離開發熱體層4並靠近電極9 時寬度尺寸越大且兩側面10為凹曲面狀。亦即，配線8的端部(第2端部)8b越靠近電極9時寬度越大。又，配線8的第2端部8b中，其側面10係凹面。在本實施形態中，第2端部8b的兩側面10係凹面。The wiring 8 is formed in a shape in which the other end portion 8b is separated from the heat generating body layer 4 and is close to the electrode 9 The larger the width dimension and the two side faces 10 are concave curved. That is, the width of the end portion (second end portion) 8b of the wiring 8 is larger as it approaches the electrode 9. Further, in the second end portion 8b of the wiring 8, the side surface 10 is a concave surface. In the present embodiment, both side faces 10 of the second end portion 8b are concave.
並且，配線8中，另一端部8b通過隔膜部6的角落部60上。亦即，配線8配置成如下：在厚度方向上，另一端部8b與隔膜部6的角落部60(開口部2a的角20)重疊。配線8的端部(第2端部)8b構成補強部。Further, in the wiring 8, the other end portion 8b passes through the corner portion 60 of the diaphragm portion 6. That is, the wiring 8 is disposed such that the other end portion 8b overlaps the corner portion 60 of the diaphragm portion 6 (the corner 20 of the opening portion 2a) in the thickness direction. The end portion (second end portion) 8b of the wiring 8 constitutes a reinforcing portion.
又，各電極9包含：方塊狀之接墊部9a，將俯視中正交於兩電極9的排列方向之方向定為長邊方向；2個延伸設置部9b，分別從接墊部9a之長邊方向的兩端部往上述排列方向延伸設置。在此，上述配線8中上述另一端部的一邊的側面延續至接墊部9a，另一邊的側面延續至延伸設置部9b。Further, each of the electrodes 9 includes a square-shaped pad portion 9a, and a direction orthogonal to the direction in which the electrodes 9 are arranged in plan view is defined as a longitudinal direction; and two extending portions 9b are respectively formed from the pad portion 9a. Both end portions in the longitudinal direction extend in the above-described arrangement direction. Here, the side surface of one side of the other end portion of the wiring 8 continues to the pad portion 9a, and the other side surface continues to the extending portion 9b.
以上所述的本實施形態之紅外線放射元件1中，配線8係於發熱體層4與各電極9之間每者設置2個，與發熱體層4側的一端部8a相反側的電極9側之另一端部8b形成為如下形狀：越離開發熱體層4並靠近電極9時寬度尺寸越大，且兩側面10為凹曲面狀，另一端部8b通過角落部60上。In the infrared radiation element 1 of the present embodiment, the wiring 8 is provided between the heating element layer 4 and each of the electrodes 9 and the electrode 9 side opposite to the one end portion 8a on the heating element layer 4 side. The one end portion 8b is formed in a shape in which the width dimension is larger as it goes away from the heat generating body layer 4 and close to the electrode 9, and the both side faces 10 have a concave curved shape, and the other end portion 8b passes through the corner portion 60.
亦即，本實施形態的紅外線放射元件1係於第4特徵加上以下的第12及第13特徵。在第12特徵中，配線8具有：端部(第2端部)8b，連接於電極9。端部(第2端部)8b越靠近電極9時寬度越大。端部(第2端部)8b係補強部。第13特徵係如第8特徵，其中端部(第2端部)8b係側面10為凹面。另，第13特徵係任意特徵。又，本實施形態的紅外線放射元件1亦可具有至少1個第5~第11特徵。That is, the infrared radiation element 1 of the present embodiment is based on the fourth feature plus the following 12th and 13th features. In the twelfth feature, the wiring 8 has an end portion (second end portion) 8b and is connected to the electrode 9. The closer the end portion (second end portion) 8b is to the electrode 9, the larger the width. The end portion (second end portion) 8b is a reinforcing portion. The thirteenth feature is the eighth feature, wherein the end portion (second end portion) 8b is a concave surface on the side surface 10. In addition, the 13th feature is an arbitrary feature. Further, the infrared radiation element 1 of the present embodiment may have at least one fifth to eleventh feature.
如此，在本實施形態之紅外線放射元件1中，配線8的另一端部8b形成為如下形狀：越離開發熱體層4並靠近電極9時寬度尺寸越大，且兩側面10為凹曲面狀；且上述另一端部通過隔膜部6D的角落部60上。As described above, in the infrared radiation element 1 of the present embodiment, the other end portion 8b of the wiring 8 is formed in a shape in which the width dimension is larger as it goes away from the heating element layer 4 and close to the electrode 9, and the both side surfaces 10 are concave curved surfaces; The other end portion passes through the corner portion 60 of the diaphragm portion 6D.
因此，可使各配線8及隔膜部6D之角落部60中的應力分散，而能提 升各配線8及隔膜部6D的機械強度。所以，紅外線放射元件1能達成可靠度的進一步提昇。Therefore, the stress in the corner portions 60 of the respective wirings 8 and the diaphragm portion 6D can be dispersed, and The mechanical strength of each of the wires 8 and the diaphragm portion 6D is increased. Therefore, the infrared radiation element 1 can achieve further improvement in reliability.
(實施形態3)(Embodiment 3)
以下依據圖3來說明本實施形態之紅外線放射元件1。Hereinafter, the infrared radiation element 1 of the present embodiment will be described with reference to Fig. 3 .
本實施形態之紅外線放射元件1係配線8的配置及電極9之形狀與實施形態1的紅外線放射元件1不同。另，與實施形態1相同的構成要素係標註相同符號並省略說明。The arrangement of the infrared radiation element 1 wiring 8 of the present embodiment and the shape of the electrode 9 are different from those of the infrared radiation element 1 of the first embodiment. The same components as those in the first embodiment are denoted by the same reference numerals and will not be described.
本實施形態的紅外線放射元件1中，將發熱體層4與各電極9每者藉由1條配線8(85、86)加以連接。亦即，電極9A藉由配線85來電性連接至發熱體層4。又，電極9B藉由配線86來電性連接至發熱體層4。In the infrared radiation element 1 of the present embodiment, the heating element layer 4 and each of the electrodes 9 are connected by one wiring 8 (85, 86). That is, the electrode 9A is electrically connected to the heat generating body layer 4 by the wiring 85. Further, the electrode 9B is electrically connected to the heat generating body layer 4 by the wiring 86.
在此，各配線8(85、86)沿著成對之電極9A、9B的排列方向(圖3(a)中的左右方向)配置。又，紅外線放射元件1將各配線8(85、86)配置成連結2條配線85、86的直線通過俯視中的發熱體層4之中心。Here, each of the wirings 8 (85, 86) is arranged along the direction in which the paired electrodes 9A, 9B are arranged (the horizontal direction in FIG. 3(a)). Moreover, the infrared radiation element 1 arranges the respective wirings 8 (85, 86) so that the straight line connecting the two wirings 85 and 86 passes through the center of the heating element layer 4 in plan view.
第1電極9A與第2電極9B在基準面中配置於沿著開口部2a的一邊之既定方向(圖3(a)中的左右方向)上的開口部2a之兩側。又，各電極9包含：方塊狀的接墊部9a，將俯視中正交於兩電極9的排列方向(上述既定方向)之方向定為長邊方向(圖3(a)中的上下方向)；2個延伸設置部9b，分別從接墊部9a的長邊方向兩端部往上記排列方向延伸設置。The first electrode 9A and the second electrode 9B are disposed on both sides of the opening 2a in a predetermined direction (the horizontal direction in FIG. 3( a )) along one side of the opening 2 a on the reference surface. Further, each of the electrodes 9 includes a square-shaped pad portion 9a, and the direction orthogonal to the arrangement direction of the electrodes 9 (the predetermined direction) in the plan view is defined as the longitudinal direction (the vertical direction in FIG. 3(a)). The two extending portions 9b are extended from the both end portions in the longitudinal direction of the pad portion 9a in the upward arrangement direction.
在此，各電極9具有：三角形狀的補強部9c，延續至接墊部9a及延伸設置部9b，並通過隔膜部6D的角落部。Here, each of the electrodes 9 has a triangular-shaped reinforcing portion 9c that continues to the pad portion 9a and the extending portion 9b and passes through the corner portion of the diaphragm portion 6D.
亦即，第1電極9A在接墊部9a及2個延伸設置部9b以外，還包含分別對應於4個角20之中靠近第1電極9A的2個角21、22之補強部9c(9c1、9c2)。同樣地，第2電極9B在接墊部9a及2個延伸設置部9b以外，還包含分別對應於4個角20之中靠近第2電極9B的2個角23、24之補強部 9c(9c3、9c4)。In other words, the first electrode 9A includes a reinforcing portion 9c (9c1) corresponding to the two corners 21 and 22 of the four corners 20, which are adjacent to the first electrode 9A, in addition to the pad portion 9a and the two extending portions 9b. , 9c2). Similarly, the second electrode 9B includes, in addition to the pad portion 9a and the two extending portions 9b, a reinforcing portion corresponding to the two corners 23 and 24 of the four corners 20, which are adjacent to the second electrode 9B. 9c (9c3, 9c4).
以上所述的本實施形態之紅外線放射元件1係於第3特徵加上以下第14特徵。在第14特徵中，開口部2a係具有4個角20(21~24)的矩形或正方形。電極9包含第1電極9A與第2電極9B。第1電極9A與第2電極9B在基準面(平行於基板2的一表面2b之面)中配置於沿著開口部2a的一邊之既定方向(圖3(a)中的左右方向)上的開口部2a之兩側。第1電極9A包含分別對應於4個角20(21~24)之中靠近第1電極9A的2個角21、22之補強部9c1、9c2。第2電極9B包含分別對應於4個角21~24之中靠近第2電極9B的2個角23、24之補強部9c3、9c4。另，本實施形態之紅外線放射元件1亦可至少具有1個第4~11特徵。The infrared radiation element 1 of the present embodiment described above is based on the third feature plus the following fourteenth feature. In the fourteenth feature, the opening portion 2a has a rectangular shape or a square shape of four corners 20 (21 to 24). The electrode 9 includes a first electrode 9A and a second electrode 9B. The first electrode 9A and the second electrode 9B are disposed on a reference plane (surface parallel to one surface 2b of the substrate 2) in a predetermined direction along the one side of the opening 2a (left-right direction in FIG. 3(a)). Both sides of the opening 2a. The first electrode 9A includes reinforcing portions 9c1 and 9c2 corresponding to the two corners 21 and 22 of the first electrode 9A among the four corners 20 (21 to 24). The second electrode 9B includes reinforcing portions 9c3 and 9c4 corresponding to the two corners 23 and 24 of the four corners 21 to 24 which are adjacent to the second electrode 9B. Further, the infrared radiation element 1 of the present embodiment may have at least one fourth to eleventh feature.
並且，本實施形態之紅外線放射元件1藉由在第1絕緣層3上形成有發熱體層4，而能提高熱絕緣性而達成高輸出化，且通電部11通過隔膜部6D的各角落部60上，藉以利用通電部11來補強隔膜部6D，而能達成可靠度之提昇。In the infrared radiation element 1 of the present embodiment, the heat generating layer 4 is formed on the first insulating layer 3, whereby the heat insulating property can be improved and the output can be increased, and the energizing portion 11 passes through the corner portions 60 of the diaphragm portion 6D. In the above, the diaphragm portion 6D is reinforced by the energizing portion 11, and the reliability can be improved.
又，紅外線放射元件1因為可藉由通電部11來補強隔膜部6D，所以不須另外形成補強膜來補強隔膜部6D，而能達成低成本化。Further, since the infrared radiation element 1 can reinforce the diaphragm portion 6D by the energizing portion 11, it is not necessary to separately form the reinforcing film to reinforce the diaphragm portion 6D, and the cost can be reduced.
各實施形態的紅外線放射元件1不限於氣體偵測器用的紅外光源，例如，可使用在紅外光通信用的紅外光源、分光分析用的紅外光源等。The infrared radiation element 1 of each embodiment is not limited to an infrared light source for a gas detector, and for example, an infrared light source for infrared light communication, an infrared light source for spectroscopic analysis, or the like can be used.
1‧‧‧紅外線放射元件1‧‧‧Infrared emitting elements
2‧‧‧基板2‧‧‧Substrate
2a‧‧‧開口部2a‧‧‧ openings
2b‧‧‧一表面2b‧‧‧ a surface
2c‧‧‧另一表面2c‧‧‧ another surface
3‧‧‧第1絕緣層3‧‧‧1st insulation layer
4‧‧‧發熱體層4‧‧‧Fever body layer
4a‧‧‧放射區域4a‧‧‧radiation area
4b‧‧‧接觸區域4b‧‧‧Contact area
5‧‧‧第2絕緣層5‧‧‧2nd insulation layer
5a‧‧‧接觸孔5a‧‧‧Contact hole
6‧‧‧薄膜構造部6‧‧‧Film Construction Department
6D‧‧‧隔膜部6D‧‧‧diaphragm department
6S‧‧‧支持部6S‧‧‧Support Department
7、7A、7B‧‧‧接觸部7, 7A, 7B‧‧‧Contacts
8、81~86‧‧‧配線8, 81~86‧‧‧ wiring
8a‧‧‧一端部(第1端部)8a‧‧‧One end (1st end)
8b‧‧‧另一端部(第2端部)8b‧‧‧Other end (2nd end)
9、9A、9B‧‧‧電極9, 9A, 9B‧‧‧ electrodes
11‧‧‧通電部11‧‧‧Electricity Department
20~24‧‧‧角20~24‧‧‧ corner
40~44‧‧‧第2角40~44‧‧‧2nd corner
60~64‧‧‧角落部60~64‧‧‧ corner
Claims (14)
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| JP2012127335 | 2012-06-04 |
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| TW201401917A TW201401917A (en) | 2014-01-01 |
| TWI498038B true TWI498038B (en) | 2015-08-21 |
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| TW102108580A TWI498038B (en) | 2012-06-04 | 2013-03-12 | Infrared radiation device |
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| JP (1) | JP5884053B2 (en) |
| TW (1) | TWI498038B (en) |
| WO (1) | WO2013183203A1 (en) |
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| JP6202440B2 (en) * | 2014-01-20 | 2017-09-27 | パナソニックＩｐマネジメント株式会社 | Infrared gas sensor |
| EP3595403A1 (en) | 2018-07-13 | 2020-01-15 | Matthias Imboden | High-temperature infrared radiator element and methods |
| CA3079443A1 (en) | 2020-01-15 | 2021-07-15 | Matthias Imboden | Metrology device, system and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000236110A (en) * | 1999-02-15 | 2000-08-29 | Anritsu Corp | Infrared emitting element |
| US20060060788A1 (en) * | 2004-09-06 | 2006-03-23 | Denso Corporation | Infrared sensor, infrared gas detector and infrared ray source |
| JP2010230453A (en) * | 2009-03-26 | 2010-10-14 | Panasonic Electric Works Co Ltd | Infrared radiation element |
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| JP3994955B2 (en) * | 2003-10-07 | 2007-10-24 | 株式会社デンソー | Infrared light source |
| JP4396464B2 (en) * | 2003-10-27 | 2010-01-13 | パナソニック電工株式会社 | Infrared radiation element and gas sensor using the same |
| JP4534597B2 (en) * | 2004-05-25 | 2010-09-01 | パナソニック電工株式会社 | Infrared radiation element |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000236110A (en) * | 1999-02-15 | 2000-08-29 | Anritsu Corp | Infrared emitting element |
| US20060060788A1 (en) * | 2004-09-06 | 2006-03-23 | Denso Corporation | Infrared sensor, infrared gas detector and infrared ray source |
| JP2010230453A (en) * | 2009-03-26 | 2010-10-14 | Panasonic Electric Works Co Ltd | Infrared radiation element |
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| WO2013183203A1 (en) | 2013-12-12 |
| TW201401917A (en) | 2014-01-01 |
| JPWO2013183203A1 (en) | 2016-01-28 |
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