TWI497471B - LED lighting device - Google Patents
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- TWI497471B TWI497471B TW102104848A TW102104848A TWI497471B TW I497471 B TWI497471 B TW I497471B TW 102104848 A TW102104848 A TW 102104848A TW 102104848 A TW102104848 A TW 102104848A TW I497471 B TWI497471 B TW I497471B
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Description
本發明涉及一種配備有由串聯連接多個LED得到的LED列作為光源的LED照明裝置，更加詳細地說，涉及一種根據施加到LED列的電壓或流過LED列的電流來切換點亮的LED列的串聯段數的LED照明裝置。The present invention relates to an LED lighting device equipped with an LED array obtained by connecting a plurality of LEDs in series as a light source, and more particularly to an LED for switching lighting according to a voltage applied to a column of LEDs or a current flowing through a column of LEDs. The number of serial segments of the LED lighting device.
已知一種由對商用交流電源進行全波整流而得到的脈動電流或近似脈動電流的電壓波形來使LED(也稱發光二極體)點亮的照明裝置(以下稱為LED照明裝置)。該LED照明裝置配備有串聯連接多個LED得到的LED列以耐高電壓。該LED列具有閾值，當超過閾值，電流流過LED列而點亮。由於該閾值被設定為比脈動電流的峰值電壓(約140V)稍低的值，因而若商用電源的有效值為100V則將閾值設為100~120V左右。另外，個別的LED有被稱為正向電壓Vf的閾值，當施加正向電壓Vf以上的電壓，電流流過而點亮。LED列的閾值為包含在LED列中的各LED的正向電壓Vf的和。An illumination device (hereinafter referred to as an LED illumination device) that illuminates an LED (also referred to as a light-emitting diode) by a voltage waveform of a ripple current or an approximate ripple current obtained by full-wave rectification of a commercial AC power source is known. The LED lighting device is equipped with an LED column obtained by connecting a plurality of LEDs in series to withstand high voltage. The LED column has a threshold value, and when the threshold value is exceeded, current flows through the LED column to illuminate. Since the threshold value is set to a value slightly lower than the peak voltage of the ripple current (about 140 V), if the effective value of the commercial power source is 100 V, the threshold value is set to about 100 to 120 V. Further, the individual LEDs have a threshold value called a forward voltage Vf, and when a voltage equal to or higher than the forward voltage Vf is applied, a current flows and lights up. The threshold of the LED column is the sum of the forward voltages Vf of the LEDs included in the LED column.
當簡單地將脈動電流電壓施加到LED列上，LED 列僅在脈動電流電壓超過閾值電壓的期間內點亮。因此，不僅會變暗或閃爍明顯，功率因數或失真係數也會變差。另外，若為了縮短非點亮期間而減小LED列的串聯段數，則與LED列串聯地***的限流電路的功率損耗會變大因而不優選。因而，就有了根據施加到LED列的電壓或流過LED列的電流來切換點亮的LED列的串聯段數，來解決上述問題的發明(例如專利文獻1、2)。When simply applying a ripple current voltage to the LED column, the LED The column lights up only during the period in which the ripple current voltage exceeds the threshold voltage. Therefore, not only will it become dark or flicker, but the power factor or distortion coefficient will also deteriorate. Further, if the number of series-connected segments of the LED array is reduced in order to shorten the non-lighting period, the power loss of the current limiting circuit inserted in series with the LED array is increased, which is not preferable. Therefore, there is an invention that solves the above problem by switching the number of series of LED columns that are lit by the voltage applied to the LED array or the current flowing through the LED array (for example, Patent Documents 1 and 2).
專利文獻1的圖1中公開了一種將發光二極體電路15(LED列)分割成6個二極體電路17~22，基於脈動電流電壓來切換驅動開關30~35，並調整點亮的發光二極體14的個數(串聯段數)的發光二極體點亮裝置(LED照明裝置)。FIG. 1 of Patent Document 1 discloses dividing a light-emitting diode circuit 15 (LED array) into six diode circuits 17 to 22, switching drive switches 30 to 35 based on a ripple current voltage, and adjusting lighting. A light-emitting diode lighting device (LED lighting device) in which the number of light-emitting diodes 14 (the number of series segments) is increased.
如專利文獻1所述的基於脈動電流電壓來切換電流路徑的電路中，在切換路徑的瞬間流過LED列的電流大幅減少或大幅增加。即電流值變為不連續，會引起高次諧波雜訊的增加等各種問題。對此，專利文獻2的圖26所示的LED驅動電路中，通過計測流過LED列的電流，若電流超過規定值則增加LED列的串聯段數，同時也連續地增加電流。In the circuit for switching the current path based on the pulsating current voltage as described in Patent Document 1, the current flowing through the LED column at the moment of switching the path is greatly reduced or greatly increased. That is, the current value becomes discontinuous, which causes various problems such as an increase in harmonic noise. On the other hand, in the LED drive circuit shown in FIG. 26 of Patent Document 2, by measuring the current flowing through the LED array, if the current exceeds a predetermined value, the number of series of LED columns is increased, and the current is continuously increased.
簡單對專利文獻2的圖26的電路進行說明(參照圖8)。在圖8中，有由LED組1、LED組2以及LED組3構成的LED列。當流過LED列的電流少時，流過LED組1以及LED組2的電流被FETQ1旁路，LED組3中沒有電流流過(沒有點亮)。當電流增加，進行動作以使流過FETQ1的電流與流過LED組3的電流的和保持恒定。此時LED組3微弱點亮。進 而，當電流增加超過規定值，FETQ1截止，全部電流流入LED組3，LED組1、2以及LED組3都完全點亮。另外，當電流減小時進行相反的步驟。並且，電流的上限值由限流電阻R1來限制。The circuit of Fig. 26 of Patent Document 2 will be briefly described (see Fig. 8). In Fig. 8, there is an LED array composed of an LED group 1, an LED group 2, and an LED group 3. When the current flowing through the LED column is small, the current flowing through the LED group 1 and the LED group 2 is bypassed by the FET Q1, and no current flows in the LED group 3 (no lighting). When the current is increased, an action is made to keep the sum of the current flowing through the FET Q1 and the current flowing through the LED group 3 constant. At this time, the LED group 3 is slightly lit. Enter On the other hand, when the current increases beyond the prescribed value, the FET Q1 is turned off, and all the current flows into the LED group 3, and the LED groups 1, 2, and the LED group 3 are completely lit. In addition, the opposite step is performed when the current is reduced. Also, the upper limit of the current is limited by the current limiting resistor R1.
由於當由如圖8所示的專利文獻2的圖26所示的電路來使LED點亮，若脈動電流電壓變高則流過LED列的電流也增加，若脈動電流電壓變低則流過LED列的電流也減少，因而具有功率因數以及失真係數優良的特徵。When the LED is lit by the circuit shown in FIG. 26 of Patent Document 2 shown in FIG. 8, if the ripple current voltage becomes high, the current flowing through the LED column also increases, and if the ripple current voltage becomes low, it flows. The current in the LED column is also reduced, and thus has a feature of excellent power factor and distortion coefficient.
專利文獻1：專利第4581646號公報(圖1)Patent Document 1: Patent No. 4581646 (Fig. 1)
專利文獻2：國際申請W02011/020007號公報(圖26)Patent Document 2: International Application No. WO2011/020007 (Fig. 26)
然而，不僅專利文獻1的圖1所示的發光二極體電路15(LED列)，專利文獻2的圖26所示的LED組1、2、3(LED列)也都是LED列的一部分在從脈動電流電壓低的期間到高的期間的長期間內一直點亮，而LED列的其它部分僅在脈動電流電壓高的期間即短期間內點亮。即，在LED列中，既有長時間點亮並高效工作的部分，另一方面也有僅在短時間內點亮並低效工作的部分。當有低效的部分，就產生了導致裝置大型化或成本增加等的種種問題。However, not only the light-emitting diode circuit 15 (LED array) shown in FIG. 1 of Patent Document 1, but also the LED groups 1, 2, and 3 (LED columns) shown in FIG. 26 of Patent Document 2 are also part of the LED array. The light is always turned on for a long period of time from the period when the ripple current voltage is low to the high period, and the other portion of the LED array is lit only for a short period of time when the ripple current voltage is high. That is, in the LED array, there is a portion that is lit for a long time and operates efficiently, and on the other hand, a portion that is lit only for a short period of time and operates inefficiently. When there is an inefficient part, various problems such as an increase in size of the apparatus or an increase in cost are caused.
因而，本發明是鑒於上述問題而提出的，其目的在於，提供一種在配備有由串聯連接多個LED得到的LED 列作為光源，且根據施加到該LED列的電壓或電流來切換點亮的LED的個數的LED照明裝置中，包含在LED列中的LED高效地進行動作的LED照明裝置。Accordingly, the present invention has been made in view of the above problems, and an object thereof is to provide an LED provided with a plurality of LEDs connected in series An LED illumination device in which the LEDs included in the LED array are efficiently operated in the LED illumination device in which the number of LEDs to be lit is switched according to the voltage or current applied to the LED array.
本發明的LED照明裝置在配備有由串聯連接多個LED得到的LED列作為光源，並對該LED列施加脈動電流的LED照明裝置中，LED列中包括在脈動電流的週期內長期間點亮的部分和僅在短期間內點亮的部分，包含在長期間點亮的部分中的LED的元件尺寸與包含在僅在短期間內點亮的部分中的LED的元件尺寸不同。In the LED lighting device of the present invention, in an LED lighting device equipped with an LED array obtained by connecting a plurality of LEDs in series as a light source and applying a pulsating current to the LED array, the LED array includes lighting during a period of a period of the pulsating current. The portion of the LED and the portion that is illuminated only in a short period of time, the component size of the LED included in the portion illuminated in the long period is different from the component size of the LED included in the portion illuminated in only a short period of time.
(作用)(effect)
LED當電流增多，發光量增加但發光效率降低。即隨著電流的增加，LED的元件表面上的每單位面積的發光量增大，因而面積利用效率上升，而另一方面，由光放射出的能量相對投入的能量之比表示的發光效率降低。在適當地設定流過LED列的電流(也稱正向電流If)的情況下，當在LED列中使包含在長期間點亮的部分中的LED的元件尺寸變大，由於發光量多因而能夠很高地維持面積利用效率，進而電流密度下降也能夠很高地維持發光效率。此時，包含在僅在短期間內點亮的部分中的LED，由於元件尺寸小因而即使發光量少面積利用效率也高，由於每單位時間的電流量小因而發光效率良好。即對於包含在一個LED列中的LED元件，通過使包含在長期間點亮的部分中的LED的尺寸大於包含在僅在短期間內點亮的部分中的LED的尺寸，LED在兩個部分都能高效率地工作。When the LED increases in current, the amount of luminescence increases but the luminous efficiency decreases. That is, as the current increases, the amount of light per unit area on the surface of the element of the LED increases, and thus the area utilization efficiency increases, and on the other hand, the luminous efficiency expressed by the ratio of the energy emitted by the light to the input energy decreases. . In the case where the current flowing through the LED column (also referred to as forward current If) is appropriately set, when the size of the element including the LED included in the portion illuminated for a long period of time in the LED column is increased, the amount of light emission is large. The area utilization efficiency can be maintained very high, and the current density can be lowered to maintain the luminous efficiency very high. At this time, since the LED included in the portion that is lit only for a short period of time has a small element size, the area utilization efficiency is high, and the amount of current per unit time is small, so that the light-emitting efficiency is good. That is, for an LED element included in one LED column, the LED is in two parts by making the size of the LED included in the portion illuminated in the long period larger than the size of the LED included in the portion illuminated only in a short period of time Can work efficiently.
包含在長期間點亮的部分中的LED的元件尺寸也可以比包含在僅在短期間內點亮的部分中的LED的元件尺寸大。The element size of the LED included in the portion illuminated in the long period may also be larger than the element size of the LED included in the portion illuminated only for a short period of time.
包含在僅在短期間內點亮的部分的LED優選被集成化。The LEDs included in the portion that is lit only in a short period of time are preferably integrated.
在長期間點亮的部分與僅在短期間內點亮的部分的連接部配備有旁路電路，可以使電流從長期間點亮的部分流入到旁路電路，直到流過僅在短期間內點亮的部分的電流超過規定值。A connection portion that is lit for a long period of time and a portion that is lit only for a short period of time is provided with a bypass circuit that allows current to flow from a portion that is illuminated for a long period of time to the bypass circuit until it flows through only a short period of time The current in the lit portion exceeds the specified value.
旁路電路可以包含有耗盡型FET。The bypass circuit can include a depletion FET.
以上那樣的本發明的LED照明裝置配備有由串聯連接多個LED得到的LED列作為光源，在根據施加到該LED列的電壓或電流來切換點亮的LED的個數時，包含在LED列中的LED高效地工作。The LED lighting device of the present invention as described above is provided with an LED array obtained by connecting a plurality of LEDs in series as a light source, and is included in the LED column when the number of LEDs to be switched is switched according to a voltage or a current applied to the LED column. The LEDs work efficiently.
14‧‧‧發光二極體14‧‧‧Lighting diode
202‧‧‧配線202‧‧‧Wiring
15‧‧‧發光二極體電路15‧‧‧Lighting diode circuit
203、407、408‧‧‧LED列203, 407, 408‧‧‧LED columns
17~22‧‧‧二極體電路17~22‧‧‧Diode Circuit
204‧‧‧p型半導體區域204‧‧‧p-type semiconductor region
21‧‧‧LED基板21‧‧‧LED substrate
205‧‧‧n型半導體區域205‧‧‧n type semiconductor region
20‧‧‧半導體層疊構造20‧‧‧Semiconductor laminated structure
400‧‧‧LED照明裝置400‧‧‧LED lighting device
22‧‧‧n型半導體層22‧‧‧n type semiconductor layer
401~404‧‧‧二極體電橋401~404‧‧‧Diode Bridge
23‧‧‧發光層23‧‧‧Lighting layer
405‧‧‧橋式整流電路405‧‧‧Bridge rectifier circuit
24‧‧‧p型半導體層24‧‧‧p-type semiconductor layer
406‧‧‧商用電源406‧‧‧Commercial power supply
25‧‧‧透明導電層25‧‧‧Transparent conductive layer
430‧‧‧旁路電路430‧‧‧Bypass circuit
26‧‧‧正極側端子26‧‧‧ positive terminal
431、434‧‧‧電阻431, 434‧‧‧ resistance
27‧‧‧負極側端子27‧‧‧Negative side terminal
432‧‧‧n型M0S電晶體432‧‧‧n type MOS transistor
100‧‧‧發光部100‧‧‧Lighting Department
433‧‧‧NPN型雙極型電晶體433‧‧‧NPN bipolar transistor
101‧‧‧基板101‧‧‧Substrate
440‧‧‧恒流電路440‧‧‧Constant current circuit
102、103、104‧‧‧LED列102, 103, 104‧‧‧ LED columns
441、444、442‧‧‧電阻441, 444, 442‧‧‧ resistance
105、106、107‧‧‧端子105, 106, 107‧‧‧ terminals
443‧‧‧電晶體443‧‧‧Optoelectronics
200‧‧‧晶片200‧‧‧ wafer
600‧‧‧LED照明裝置600‧‧‧LED lighting device
201、206‧‧‧襯墊201, 206‧‧‧ pads
640‧‧‧恒流電路640‧‧‧ constant current circuit
630‧‧‧旁路電路630‧‧‧Bypass circuit
L1、L2‧‧‧值L1, L2‧‧‧ values
631、634‧‧‧保護電阻631, 634‧‧‧protective resistance
A、B‧‧‧端子A, B‧‧‧ terminals
632‧‧‧n型M0S電晶體632‧‧‧n type M0S transistor
Vf、If‧‧‧正向電壓Vf, If‧‧‧ forward voltage
640‧‧‧恒流電路640‧‧‧ constant current circuit
R1‧‧‧限流電阻R1‧‧‧ current limiting resistor
641、644‧‧‧電阻641, 644‧‧‧ resistance
I‧‧‧電流I‧‧‧current
642‧‧‧n型M0S電晶體642‧‧‧n type M0S transistor
t1~t4‧‧‧期間During the period of t1~t4‧‧
圖1是包含在本發明的實施方式中的發光部的電路圖。Fig. 1 is a circuit diagram of a light-emitting portion included in an embodiment of the present invention.
圖2是包含在如圖1所示的發光部的集成LED的俯視圖。2 is a top plan view of an integrated LED included in the light emitting portion shown in FIG. 1.
圖3是圖2所示的集成LED的電路圖。3 is a circuit diagram of the integrated LED shown in FIG. 2.
圖4(a)-(b)是示出LED的構成的俯視圖以及剖面圖。4(a) to 4(b) are a plan view and a cross-sectional view showing a configuration of an LED.
圖5是用於驅動圖1所示的發光部的電路圖。Fig. 5 is a circuit diagram for driving the light-emitting portion shown in Fig. 1.
圖6(a)-(b)是圖5所示的電路的波形圖。6(a)-(b) are waveform diagrams of the circuit shown in Fig. 5.
圖7是用於驅動圖1所示的發光部的其它電路圖。Fig. 7 is another circuit diagram for driving the light-emitting portion shown in Fig. 1.
圖8是以往的LED驅動電路的電路圖。8 is a circuit diagram of a conventional LED drive circuit.
以下，參照附圖1~7詳細地對本發明優選的實施方式進行說明。另外，在附圖說明中，對相同或相當的要素附上相同的符號，省略重複的說明。並且，為了方便說明而適當變更構件的比例尺。此外，在括弧內敘述與申請專利範圍書所述的發明具體事項的關係。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 7. In the description of the drawings, the same or corresponding elements are designated by the same reference numerals, and the repeated description is omitted. Further, the scale of the member is appropriately changed for convenience of explanation. In addition, the relationship between the specific matters of the invention described in the patent application scope is described in parentheses.
通過圖1對包含於本發明的實施方式的發光部100進行說明。圖1是發光部100的電路圖。在發光部100中，基板101上有24個LED102、2個集成LED103、104和3個端子105、106、107。24個LED102串聯連接。該LED列的正極與端子107連接，負極與端子106以及集成LED104的下側端子連接。集成LED104、103串聯連接，集成LED103的上側端子與端子105連接。The light-emitting unit 100 according to the embodiment of the present invention will be described with reference to Fig. 1 . FIG. 1 is a circuit diagram of a light emitting unit 100. In the light-emitting portion 100, the substrate 101 has 24 LEDs 102, two integrated LEDs 103, 104, and three terminals 105, 106, 107. The 24 LEDs 102 are connected in series. The positive electrode of the LED array is connected to the terminal 107, and the negative electrode is connected to the terminal 106 and the lower terminal of the integrated LED 104. The integrated LEDs 104, 103 are connected in series, and the upper terminal of the integrated LED 103 is connected to the terminal 105.
在對圖1詳細說明之前先通過圖2、3對圖1所示的集成LED103、104進行說明。圖2是集成LED103、104的俯視圖，圖3是集成LED103、104的電路圖。如圖2所示，在晶片200上有襯墊201、206和6個LED203，LED203上有p型半導體區域204和n型半導體區域205。襯墊201通過配線202與左上方的LED203的p型半導體區域204連接。同樣地，襯墊206通過配線202與右下方的LED203的n型半導體區域205連接。其它，各LED203的n型半導體區域205通過配線202與相鄰的LED203的p型半導體區域204連接。The integrated LEDs 103, 104 shown in Fig. 1 will be described with reference to Figs. 2 and 3 before being explained in detail in Fig. 1. 2 is a top plan view of integrated LEDs 103, 104, and FIG. 3 is a circuit diagram of integrated LEDs 103, 104. As shown in FIG. 2, the wafer 200 has pads 201, 206 and six LEDs 203 having a p-type semiconductor region 204 and an n-type semiconductor region 205 thereon. The spacer 201 is connected to the p-type semiconductor region 204 of the upper left LED 203 through the wiring 202. Similarly, the spacer 206 is connected to the n-type semiconductor region 205 of the lower right LED 203 through the wiring 202. Otherwise, the n-type semiconductor region 205 of each of the LEDs 203 is connected to the p-type semiconductor region 204 of the adjacent LED 203 via the wiring 202.
晶片200是藍寶石等的絕緣基板，是由晶片切成的。LED203為p型半導體層層疊在n型半導體層上而成的構造，削掉p型半導體層的一部分而使n型半導體層暴露出來的是n型半導體區域205。發光層是n型半導體層和p型半導體層的邊界部，其平面形狀大致與p型半導體區域204的平面形狀相同。The wafer 200 is an insulating substrate such as sapphire and is cut from a wafer. The LED 203 has a structure in which a p-type semiconductor layer is laminated on an n-type semiconductor layer, and an n-type semiconductor region 205 is formed by cutting off a part of the p-type semiconductor layer and exposing the n-type semiconductor layer. The light-emitting layer is a boundary portion between the n-type semiconductor layer and the p-type semiconductor layer, and its planar shape is substantially the same as the planar shape of the p-type semiconductor region 204.
p型半導體區域204是LED203的正極，n型半導體區域205是LED203的負極。結果，如圖3所示，集成LED103、104為6個LED203串聯連接，襯墊201作為該二極體列的正極，襯墊206作為負極。The p-type semiconductor region 204 is the anode of the LED 203, and the n-type semiconductor region 205 is the cathode of the LED 203. As a result, as shown in FIG. 3, the integrated LEDs 103, 104 are connected in series with six LEDs 203, the pad 201 serves as the positive electrode of the diode row, and the pad 206 serves as the negative electrode.
再次回到圖1對發光部100進行說明。由於集成LED103、104是LED203(參照圖2、3)串聯連接而成的，作為發光部100，從端子107向著端子105地形成LED列。由於LED102是單個的晶片或組件品，元件尺寸比LED203大。另外，所謂元件尺寸，其與LED102、203的半導體層的面積或發光層的面積相當。在這裡，具體地對LED的發光層的面積進行說明。圖4是LED102的俯視圖以及剖面圖。圖4(a)示出了LED102的俯視圖，圖4(b)示出了圖4(a)的A-A的剖面圖。如圖4(b)所示，LED102在由藍寶石構成的LED基板21上配備有包含發光層的半導體層疊構造20。半導體層疊構造20由n型半導體層22、發光層23、p型半導體層24構成。在n型半導體層22上設有負極側端子27，在p型半導體層24上隔著由ITO構成的透明導電層25設有正極側端子26，通過在正極側端子26與負極側端子27之間施加閾值以 上的電壓來使發光層23發光。如圖8所示，本實施例中的元件尺寸與發光層23的面積相當。Returning to Fig. 1 again, the light emitting unit 100 will be described. Since the integrated LEDs 103 and 104 are formed by connecting the LEDs 203 (see FIGS. 2 and 3) in series, as the light-emitting unit 100, LED rows are formed from the terminals 107 toward the terminals 105. Since the LED 102 is a single wafer or component, the component size is larger than the LED 203. Further, the element size corresponds to the area of the semiconductor layer of the LEDs 102 and 203 or the area of the light-emitting layer. Here, the area of the light-emitting layer of the LED will be specifically described. 4 is a plan view and a cross-sectional view of the LED 102. 4(a) shows a plan view of the LED 102, and FIG. 4(b) shows a cross-sectional view of A-A of FIG. 4(a). As shown in FIG. 4(b), the LED 102 is provided with a semiconductor laminated structure 20 including a light-emitting layer on an LED substrate 21 made of sapphire. The semiconductor multilayer structure 20 is composed of an n-type semiconductor layer 22, a light-emitting layer 23, and a p-type semiconductor layer 24. A negative electrode side terminal 27 is provided on the n-type semiconductor layer 22, and a positive electrode side terminal 26 is provided on the p-type semiconductor layer 24 via a transparent conductive layer 25 made of ITO, and the positive electrode side terminal 26 and the negative electrode side terminal 27 are provided. Apply a threshold between The upper voltage causes the light-emitting layer 23 to emit light. As shown in FIG. 8, the element size in this embodiment is equivalent to the area of the light-emitting layer 23.
然後，通過圖5對本實施方式中的LED照明裝置400進行說明。圖5是用於驅動圖1所示的發光部100的電路圖。LED照明裝置400與商用電源406連接，除發光部100，還配備有橋式整流電路405、旁路電路430、恒流電路440。Next, the LED lighting device 400 in the present embodiment will be described with reference to Fig. 5 . FIG. 5 is a circuit diagram for driving the light emitting unit 100 shown in FIG. 1. The LED lighting device 400 is connected to the commercial power source 406, and is provided with a bridge rectifier circuit 405, a bypass circuit 430, and a constant current circuit 440 in addition to the light emitting unit 100.
發光部100由LED102串聯連接而成的部分LED列407和LED203串聯連接而成的部分LED列408構成。圖中示出：部分LED列407相當於在圖1中串聯連接的24個LED102的LED列，正極連接於端子107、負極連接於端子106。部分LED列408與圖1中串聯連接的集成LED103和集成LED104相當，由12個圖2、3所示的LED203串聯連接而成。另外，圖中用黑框圍住部分LED列408是表示部分LED408列由集成LED103、104構成。又，將LED203畫得比LED102小是表示LED203的元件尺寸比LED102的元件尺寸小。還示出了：部分LED列408的正極與圖1所示的端子106相連接，負極與端子105相連接。The light-emitting unit 100 is composed of a partial LED array 407 in which a part of the LED array 407 in which the LEDs 102 are connected in series, and a partial LED array 408 in which the LEDs 203 are connected in series. The figure shows that the partial LED array 407 corresponds to the LED array of 24 LEDs 102 connected in series in FIG. 1, the positive electrode is connected to the terminal 107, and the negative electrode is connected to the terminal 106. The partial LED array 408 is equivalent to the integrated LED 103 and the integrated LED 104 connected in series in FIG. 1, and is connected in series by 12 LEDs 203 shown in FIGS. In addition, enclosing the partial LED array 408 with a black frame in the figure indicates that the partial LED 408 column is composed of integrated LEDs 103, 104. Further, drawing the LED 203 smaller than the LED 102 means that the element size of the LED 203 is smaller than the element size of the LED 102. It is also shown that the positive pole of the partial LED array 408 is connected to the terminal 106 shown in FIG. 1, and the negative pole is connected to the terminal 105.
橋式整流電路405為由4個二極體401~404構成的二極體電橋，二極體電橋的交流輸入側連接到商用電源406。端子A和端子B分別為橋式整流電路405的電流流出側的端子和電流流過側的端子。端子A與部分LED列407的端子107連接，端子B與旁路電路430的-側端子連接。The bridge rectifier circuit 405 is a diode bridge composed of four diodes 401 to 404, and the AC input side of the diode bridge is connected to the commercial power source 406. The terminal A and the terminal B are a terminal on the current outflow side of the bridge rectifier circuit 405 and a terminal on the current flowing side, respectively. The terminal A is connected to the terminal 107 of the partial LED column 407, and the terminal B is connected to the -side terminal of the bypass circuit 430.
旁路電路430由電阻431、434、n型M0S電晶體432(以下稱為FET)、NPN型雙極型電晶體433(以下稱為電晶 體)構成。旁路電路430的+側端子為電阻431的上端與FET432的漏極的連接部，-側端子為電晶體433的發射極與電阻434的下端的連接部。電流檢測端子為FET432的源極、電晶體433的基極以及電阻434的上端的連接部。+側端子與部分LED列407、408的端子106連接，-側端子與橋式整流電路405的端子B連接。電流檢測端子與恒流電路440的-側端子連接，從恒流電路440流入的電流經由電阻434和電晶體433流向橋式整流電路405的端子B。The bypass circuit 430 is composed of resistors 431 and 434, an n-type MOS transistor 432 (hereinafter referred to as FET), and an NPN-type bipolar transistor 433 (hereinafter referred to as a transistor). Body). The + side terminal of the bypass circuit 430 is a connection portion between the upper end of the resistor 431 and the drain of the FET 432, and the - side terminal is a connection portion between the emitter of the transistor 433 and the lower end of the resistor 434. The current detecting terminal is a source of the FET 432, a base of the transistor 433, and a connection portion of the upper end of the resistor 434. The + side terminal is connected to the terminal 106 of the partial LED arrays 407, 408, and the - side terminal is connected to the terminal B of the bridge rectifier circuit 405. The current detecting terminal is connected to the - side terminal of the constant current circuit 440, and the current flowing from the constant current circuit 440 flows to the terminal B of the bridge rectifier circuit 405 via the resistor 434 and the transistor 433.
恒流電路440由電阻441、444、FET442、電晶體443構成。恒流電路440的+側端子為電阻441的上端與FET442的漏極的連接部，並與部分LED列408的端子105連接。-側端子為電晶體443的發射極與電阻444的下端的連接部，並與旁路電路430的電流檢測端子連接。The constant current circuit 440 is composed of resistors 441, 444, FET 442, and transistor 443. The + side terminal of the constant current circuit 440 is a connection portion between the upper end of the resistor 441 and the drain of the FET 442, and is connected to the terminal 105 of the partial LED array 408. The side terminal is a connection portion between the emitter of the transistor 443 and the lower end of the resistor 444, and is connected to the current detecting terminal of the bypass circuit 430.
然後，採用圖6對圖5的電路的動作進行說明。圖6(a)是示出圖5的電路中，以橋式整流電路405的端子B為基準的情況下的端子A的電壓波形的波形圖，圖6(b)是示出圖5的電路中，從端子A流向端子B的電流波形的波形圖。(a)示出了脈動電流的一個週期，(a)和(b)的時間軸一致。(b)的電流波形中存在沒有電流流過的期間t1，電流急劇上升的期間t2，電流達到恒定的期間t3，電流再次上升經恒流狀態後下降的期間t4。另外，若脈動電流電壓的上升和下降以波峰為中心地對稱，則電流波形也大致對稱。Next, the operation of the circuit of Fig. 5 will be described using Fig. 6 . 6(a) is a waveform diagram showing a voltage waveform of the terminal A in the case where the terminal B of the bridge rectifier circuit 405 is used as a reference, and FIG. 6(b) is a circuit diagram showing the circuit of FIG. A waveform diagram of a current waveform flowing from the terminal A to the terminal B. (a) shows one cycle of the ripple current, and the time axes of (a) and (b) coincide. In the current waveform of (b), there is a period t1 during which no current flows, a period t2 during which the current suddenly rises, and a period t3 during which the current reaches a constant period, and the current rises again in a constant current state and then falls in a period t4. Further, if the rise and fall of the ripple current voltage are symmetrical about the peak, the current waveform is also substantially symmetrical.
然後，通過與圖6比較來對圖5的電路進行說明。期間t1中，由於脈動電流電壓比部分LED列407的閾值低而 沒有電流I流過。由於LED102的正向電壓為3V左右，期間t1為脈動電流電壓從0V升到70V前後的期間。其後，在期間t2中隨著脈動電流電壓的上升電流I也急劇上升。期間t1中由於電流檢測用的電阻434的上端的電壓沒達到0.6V，因而FET432為ON狀態。Next, the circuit of FIG. 5 will be described by comparison with FIG. 6. In the period t1, since the ripple current voltage is lower than the threshold of the partial LED column 407 No current I flows. Since the forward voltage of the LED 102 is about 3 V, the period t1 is a period before and after the ripple current voltage rises from 0 V to 70 V. Thereafter, in the period t2, the current I increases sharply as the ripple current voltage rises. In the period t1, since the voltage at the upper end of the current detecting resistor 434 does not reach 0.6 V, the FET 432 is in an ON state.
當電流I達到規定的值L1且電阻434的上端的電壓達到0.6V，期間t3開始。期間t3中，為了使電晶體433的基極-發射極之間電壓維持在0.6V，需要回饋並使電流I為恒流。在期間t3的最後的部分，脈動電流電壓高於部分LED列407的閾值與部分LED列408的閾值的和，部分LED列408中也有電流流過。此時進行控制以使流過FET432和部分LED列408的電流的和為恒定。When the current I reaches the prescribed value L1 and the voltage at the upper end of the resistor 434 reaches 0.6 V, the period t3 starts. In the period t3, in order to maintain the voltage between the base and the emitter of the transistor 433 at 0.6 V, it is necessary to feed back and make the current I a constant current. In the last portion of the period t3, the ripple current voltage is higher than the sum of the threshold of the partial LED column 407 and the threshold of the partial LED column 408, and a current flows in the partial LED array 408. Control is now performed such that the sum of the currents flowing through the FET 432 and the partial LED column 408 is constant.
進一步地，當脈動電流電壓上升，期間t4開始。當期間t4開始，流過部分LED列408的電流增加且電阻434的上端的電壓上升。結果，電晶體433飽和，FET432達到0FF狀態。進一步地，當脈動電流電壓上升，恒流電路440開始動作，將電流I定為恒定值L2。另外，當脈動電流電壓下降時，沿著相反的路徑進行。Further, when the ripple current voltage rises, the period t4 starts. When the period t4 starts, the current flowing through the partial LED column 408 increases and the voltage at the upper end of the resistor 434 rises. As a result, the transistor 433 is saturated and the FET 432 reaches the 0FF state. Further, when the ripple current voltage rises, the constant current circuit 440 starts to operate, and the current I is set to a constant value L2. In addition, when the ripple current voltage drops, it proceeds along the opposite path.
以上所述的本實施方式，在根據脈動電流電壓來控制包含在LED列中的LED的點亮個數的情況下，計測流過LED列的電流I，當電流I為規定的值以下時，僅使部分LED列407點亮(更準確地說，在期間t3結束的時刻部分LED408微弱點亮)，當電流I超過規定的值，使部分LED407和部分LED列408一起點亮。即在從脈動電流電壓低的期間 經高的期間直到再次低的期間這樣長期間內點亮的LED被包含在部分LED列407中，僅在脈動電流電壓高的期間內點亮的LED被包含在部分LED列408中。In the above-described embodiment, when the number of lighting of the LEDs included in the LED array is controlled based on the ripple current voltage, the current I flowing through the LED array is measured, and when the current I is equal to or less than a predetermined value, Only a part of the LED array 407 is lit (more precisely, at the time when the period t3 ends, the LED 408 is slightly lit), and when the current I exceeds a prescribed value, the partial LED 407 and the partial LED array 408 are lit together. That is, during the period from the pulsating current voltage is low The LED that is lit for a long period of time during the period from the high period to the low period is included in the partial LED array 407, and the LED that is lit only during the period in which the ripple current voltage is high is included in the partial LED array 408.
本實施方式中，對僅在脈動電流電壓高的期間內點亮的LED203進行集成化。這樣做的話，安裝面積變小並減化製造程序。然而，僅在脈動電流電壓高的期間內點亮的LED，由於只要元件尺寸小就能得到本發明的效果，因而可以在各個晶片上各形成一個LED，也可以進行封裝化。並且，當對LED203進行集成化，能夠更進一步地推進LED203的小型化。據此，若LED102也小型化，則LED203的集成化對正向電流If小的LED照明裝置(低功率型的LED照明裝置)有效。並且，LED102也可以集成化。但LED102由於長期間發光，在優選為在基板101(圖1參照)內分散的情況下最好不進行集成化。In the present embodiment, the LEDs 203 that are turned on only during the period in which the ripple current voltage is high are integrated. In doing so, the installation area is reduced and the manufacturing process is reduced. However, the LED which is lit only during the period in which the pulsating current voltage is high can obtain the effect of the present invention as long as the element size is small, so that one LED can be formed on each wafer or packaged. Further, when the LEDs 203 are integrated, the miniaturization of the LEDs 203 can be further advanced. According to this, when the LEDs 102 are also miniaturized, the integration of the LEDs 203 is effective for an LED illumination device (low-power type LED illumination device) having a small forward current If. Also, the LEDs 102 can be integrated. However, in the case where the LEDs 102 emit light for a long period of time, it is preferable not to integrate them when it is preferable to disperse in the substrate 101 (refer to FIG. 1).
本實施方式雖然以包含在長期間點亮的部分中的LED102的元件尺寸比包含在僅在短期間內點亮的部分中的LED203的元件尺寸大的情況為例進行了說明，但不限於此，只要包含在長期間點亮的部分中的LED102的元件尺寸與包含在僅在短期間內點亮的部分中的LED203的元件尺寸不相同即可。In the present embodiment, the case where the element size of the LED 102 included in the portion that is illuminated for a long period of time is larger than the element size of the LED 203 included in the portion that is lit only for a short period of time is described as an example, but is not limited thereto. As long as the element size of the LED 102 included in the portion illuminated for a long period of time is different from the element size of the LED 203 included in the portion illuminated only for a short period of time.
本實施方式中雖然為了切換LED列的串聯段數而檢測電流，但也可以為了串聯段數的切換而檢測電壓。然而，在通過檢測電壓來切換串聯段數的方式中，有可能會在串聯段數的切換時電流波形具有尖的波峰並誘發高次 諧波雜訊。對此，若像本實施形態的那樣監視電流，使電流跟隨電壓的增減而變動，則能夠達到一個對於高次諧波雜訊、功率因數、失真係數均良好的狀態。In the present embodiment, the current is detected in order to switch the number of series of LED columns, but the voltage may be detected for switching the number of series segments. However, in the manner of switching the number of series segments by detecting the voltage, there is a possibility that the current waveform has a sharp peak at the switching of the number of series segments and induces a high order. Harmonic noise. On the other hand, when the current is monitored and the current follows the voltage increase and decrease as in the present embodiment, it is possible to achieve a state in which the harmonic noise, the power factor, and the distortion coefficient are good.
並且，本實施方式由於假設有效值為100V的電源作為商用交流電源，因而將LED102、203的串聯段數定為36段。在商用電源為200V~240V的情況下也可以將串聯段數定為60~80段。Further, in the present embodiment, since a power source having an effective value of 100 V is assumed to be a commercial AC power source, the number of series of LEDs 102 and 203 is set to 36 segments. In the case of a commercial power supply of 200V to 240V, the number of series segments can be set to 60 to 80 segments.
本實施方式中，如圖5所示，將LED列分割成部分LED列407和部分LED列408。然而，分割LED列的數量不限於2，例如也可以將LED列分割成3個部分LED列。在該情況下，也可以使包含在最長地點亮的部分LED列中的LED的元件尺寸為最大，使包含在較長地點亮的部分LED列中的LED的元件尺寸為中間的值，使包含在僅在最短期間內點亮的部分LED列中的LED的元件尺寸為最小。In the present embodiment, as shown in FIG. 5, the LED array is divided into a partial LED array 407 and a partial LED array 408. However, the number of divided LED columns is not limited to two, and for example, the LED column may be divided into three partial LED columns. In this case, the element size of the LED included in the longest illuminated partial LED array may be maximized, and the element size of the LED included in the long-lit partial LED array may be an intermediate value to include The component size of the LEDs in the partial LED columns that are illuminated only in the shortest period of time is minimal.
在到此為止已說明的LED照明裝置400中，旁路電路430以及恒流電路440採用了增強型的FET電晶體432、442。與此相對地，若FET為耗盡型則能夠簡化電路。因而，通過圖7對採用耗盡型FET的本發明的另一實施方式的LED照明裝置600進行說明。圖7是用於驅動圖1所示的發光部100的電路圖。圖7相對於圖5僅旁路電路630、恒流電路640不相同。In the LED illumination device 400 described so far, the bypass circuit 430 and the constant current circuit 440 employ enhanced FET transistors 432 and 442. On the other hand, if the FET is of a depletion type, the circuit can be simplified. Thus, an LED lighting device 600 according to another embodiment of the present invention using a depletion mode FET will be described with reference to FIG. FIG. 7 is a circuit diagram for driving the light emitting unit 100 shown in FIG. 1. 7 is different from the bypass circuit 630 and the constant current circuit 640 with respect to FIG.
旁路電路630由電阻631、634、耗盡型的n型M0S電晶體632(以下稱為FET)構成。電阻631是用於保護FET632的柵極不受電湧影響的保護電阻，電阻634是用於檢測電流 的電阻。當流過電阻634的電流變大，切斷FET632的源極一漏極間的電流。The bypass circuit 630 is composed of resistors 631 and 634, and a depletion type n-type MOS transistor 632 (hereinafter referred to as FET). The resistor 631 is a protection resistor for protecting the gate of the FET 632 from the surge, and the resistor 634 is for detecting the current. The resistance. When the current flowing through the resistor 634 becomes large, the current between the source and the drain of the FET 632 is cut off.
恒流電路640由電阻641、644、耗盡型的n型M0S電晶體642(以下稱為FET)構成。電阻641為用於保護FET642的柵極不受電湧影響的保護電阻，電阻644為用於檢測電流的電阻。為使流過電阻644的電流為恒定，FET632需要回饋。The constant current circuit 640 is composed of resistors 641 and 644 and a depletion type n-type MOS transistor 642 (hereinafter referred to as FET). The resistor 641 is a protection resistor for protecting the gate of the FET 642 from a surge, and the resistor 644 is a resistor for detecting a current. In order for the current flowing through resistor 644 to be constant, FET 632 needs to be fed back.
100‧‧‧發光部100‧‧‧Lighting Department
102‧‧‧LED列102‧‧‧LED column
105、106、107‧‧‧端子105, 106, 107‧‧‧ terminals
203、407、408‧‧‧LED列203, 407, 408‧‧‧LED columns
400‧‧‧LED照明裝置400‧‧‧LED lighting device
401~404‧‧‧二極體電橋401~404‧‧‧Diode Bridge
405‧‧‧橋式整流電路405‧‧‧Bridge rectifier circuit
406‧‧‧商用電源406‧‧‧Commercial power supply
430‧‧‧旁路電路430‧‧‧Bypass circuit
431、434‧‧‧電阻431, 434‧‧‧ resistance
432‧‧‧n型M0S電晶體432‧‧‧n type MOS transistor
433‧‧‧NPN型雙極型電晶體433‧‧‧NPN bipolar transistor
440‧‧‧恒流電路440‧‧‧Constant current circuit
441、444、442‧‧‧電阻441, 444, 442‧‧‧ resistance
443‧‧‧電晶體443‧‧‧Optoelectronics
A、B‧‧‧端子A, B‧‧‧ terminals
I‧‧‧電流I‧‧‧current
Claims (10)
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| TW102104848A TWI497471B (en) | 2013-02-07 | 2013-02-07 | LED lighting device |
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| TW102104848A TWI497471B (en) | 2013-02-07 | 2013-02-07 | LED lighting device |
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| TWI497471B true TWI497471B (en) | 2015-08-21 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4641081A (en) * | 1984-02-28 | 1987-02-03 | Sharp Kabushiki Kaisha | Semiconductor circuit of MOS transistors for generation of reference voltage |
| US20100060175A1 (en) * | 2008-09-09 | 2010-03-11 | Exclara Inc. | Apparatus, Method and System for Providing Power to Solid State Lighting |
| US20110062888A1 (en) * | 2004-12-01 | 2011-03-17 | Bondy Montgomery C | Energy saving extra-low voltage dimmer and security lighting system wherein fixture control is local to the illuminated area |
| TW201143518A (en) * | 2010-05-31 | 2011-12-01 | Sunonwealth Electr Mach Ind Co | Power-supply-detectable lamp |
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2013
- 2013-02-07 TW TW102104848A patent/TWI497471B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4641081A (en) * | 1984-02-28 | 1987-02-03 | Sharp Kabushiki Kaisha | Semiconductor circuit of MOS transistors for generation of reference voltage |
| US20110062888A1 (en) * | 2004-12-01 | 2011-03-17 | Bondy Montgomery C | Energy saving extra-low voltage dimmer and security lighting system wherein fixture control is local to the illuminated area |
| US20100060175A1 (en) * | 2008-09-09 | 2010-03-11 | Exclara Inc. | Apparatus, Method and System for Providing Power to Solid State Lighting |
| TW201143518A (en) * | 2010-05-31 | 2011-12-01 | Sunonwealth Electr Mach Ind Co | Power-supply-detectable lamp |
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