TWI489580B - Method and apparatus for transferring substrate - Google Patents
Method and apparatus for transferring substrate Download PDFInfo
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Description
本發明是有關於一種基底傳送方法及其裝置，且特別是有關於一種在加熱板(hot plate)之間傳送晶圓的方法及其裝置。The present invention relates to a substrate transfer method and apparatus therefor, and more particularly to a method and apparatus for transferring a wafer between hot plates.
加熱板是廣泛用於加熱固體或液體的工具。對包括兩階段或更多階段不同溫度的熱製程而言，往往會使用相同對應數量的加熱板，以達到連續處理複數片基底。舉例來說，光阻再熱流(reflow)製程通常包括在不同溫度下的兩個加熱步驟，並分別使用兩個加熱板進行加熱步驟。Heating plates are tools that are widely used to heat solids or liquids. For a thermal process involving two or more stages of different temperatures, the same corresponding number of hot plates are often used to achieve continuous processing of the plurality of substrates. For example, a photoresist reflow process typically involves two heating steps at different temperatures and a heating step using two heating plates, respectively.
圖1是習知一種兩步驟熱製程的光阻再熱流製程的溫度曲線。圖案化光阻層110形成在基底100上並具有開口120，對圖案化光阻層110進行再熱流製程，以縮小開口120的尺寸。再熱流製程包括第一加熱步驟與第二加熱步驟，第一加熱步驟是介於時間點t1與t2之間且在第一溫度T1下進行，第二加熱步驟是介於時間點t3與t4之間且在第二溫度T2(>T1)下進行，其中製程包含傳送時間以在兩個加熱步驟之間將基底從第一加熱板傳送至第二加熱板。在進行第二加熱步驟之後，結果開口120a具有較小的尺寸。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a temperature profile of a conventional two-step thermal process photoresist reheat flow process. The patterned photoresist layer 110 is formed on the substrate 100 and has an opening 120 for reheating the patterned photoresist layer 110 to reduce the size of the opening 120. The reheating process includes a first heating step and a second heating step, the first heating step being between the time points t1 and t2 and at the first temperature T1, and the second heating step being between the time points t3 and t4 And at a second temperature T2 (> T1), wherein the process includes a transfer time to transfer the substrate from the first heating plate to the second heating plate between the two heating steps. After the second heating step, the resulting opening 120a has a smaller size.
一般而言，基底是藉由機器手臂而在加熱板之間移動。然而，由於利用機器手臂進行移動需要相當長的時間(約8-15秒)，在傳送時間的過程中會使有效溫度(significant temperature)下降，造成熱劑量(thermal dosage)以及結果開口的微縮與關鍵尺寸(critical dimension,CD)難以控制。此外，基底傳送太慢會使產能降低。In general, the substrate is moved between the heating plates by the robot arm. However, since it takes a long time (about 8-15 seconds) to move with the robot arm, the significant temperature is lowered during the transfer time, causing thermal dosage and miniaturization of the resulting opening. Critical dimensions (CD) are difficult to control. In addition, too slow substrate transfer can reduce throughput.
本發明提供一種基底傳送方法，以有效縮短不同板體之間的傳送時間。The present invention provides a substrate transfer method to effectively shorten the transfer time between different boards.
本發明另提供一種基底傳送裝置，可以使不同板體之間的傳送時間顯著減少。The present invention further provides a substrate transfer device that can significantly reduce the transfer time between different plates.
本發明提出一種基底傳送方法。在第一位置的第一板體表面上提供基底。將第一板體從第一位置移動至位於第二板體上部空間的第二位置。將基底自第一板體的表面升起。將第一板體自第二位置移開。接著，將基底從上部空間放到第二板體的表面上。The present invention proposes a substrate transfer method. A substrate is provided on the surface of the first plate in the first position. The first plate is moved from the first position to a second position in the upper space of the second plate. The substrate is raised from the surface of the first plate. The first plate is removed from the second position. Next, the substrate is placed from the upper space onto the surface of the second plate.
在一實施例中，上述之第一板體與第二板體為加熱板以加熱基底，加熱板的表面具有不同的加熱溫度。In one embodiment, the first plate body and the second plate body are heated plates to heat the substrate, and the surface of the heating plate has different heating temperatures.
在一實施例中，將基底自第一板體的表面升起的步驟與將基底放在第二板體的表面上的步驟是使用一組可從第二板體的表面伸長及收回之頂針。在將基底自第一板體的表面升起的步驟以及將第一板體自第二位置移開的步驟中，頂針通過第一板體中的一組間隙。In one embodiment, the step of raising the substrate from the surface of the first plate and the step of placing the substrate on the surface of the second plate are using a set of thimbles that are extendable and retractable from the surface of the second plate. . In the step of raising the substrate from the surface of the first plate and the step of moving the first plate away from the second position, the thimble passes through a set of gaps in the first plate.
在一實施例中，本發明之基底傳送方法更包括下列步驟。將基底自第二板體的表面升起。將第三板體移動至基底與第二板體之間的空間。將基底放在第三板體的表面上。將第三板體自第二板體的上部空間移至第三位置。第一板體與第二板體可以是加熱板以加熱基底，加熱板的表面具有不同的加熱溫度，且第三板體為冷卻板以冷卻基底。In one embodiment, the substrate transfer method of the present invention further comprises the following steps. The substrate is raised from the surface of the second plate. The third plate is moved to a space between the substrate and the second plate. The substrate is placed on the surface of the third plate. The third plate body is moved from the upper space of the second plate body to the third position. The first plate and the second plate may be heating plates to heat the substrate, the surfaces of the heating plates have different heating temperatures, and the third plate is a cooling plate to cool the substrate.
在一實施例中，當使用第三板體時，將基底自第一板體的表面升起的步驟、將基底放在第二板體的表面上的步驟、將基底自第二板體表面升起的步驟、將基底放在第三板體的表面上的步驟使用一組可從第二板體的表面伸長及收回之頂針。在將基底自第一板體的表面升起的步驟以及將第一板體自第二位置移開的步驟中，頂針通過第一板體中的一組間隙；而在將第三板體移至基底與第二板體之間的空間的步驟以及將基底放在第三板體的表面上的步驟中，頂針通過第三板體中的一組間隙。In one embodiment, when the third plate is used, the step of lifting the substrate from the surface of the first plate, the step of placing the substrate on the surface of the second plate, and the step of applying the substrate from the surface of the second plate The step of raising, the step of placing the substrate on the surface of the third plate, uses a set of thimbles that are elongated and retractable from the surface of the second plate. In the step of lifting the substrate from the surface of the first plate and the step of removing the first plate from the second position, the thimble passes through a set of gaps in the first plate; and the third plate is moved The step of the space between the substrate and the second plate and the step of placing the substrate on the surface of the third plate, the thimble passes through a set of gaps in the third plate.
在一實施例中，上述所傳送的基底為晶圓。In one embodiment, the substrate being transferred is a wafer.
本發明另提出一種基底傳送裝置，其包括第一板體與第二板體，第一板體與第二板體分別具有表面以承載基底。第一板體可在第一位置與位於第二板體上部空間的第二位置之間移動。在第一位置將基底負載於第一板體上，且在第二位置將基底從第一板體上卸載並放到第二板體的表面上。The present invention further provides a substrate transfer apparatus including a first plate body and a second plate body, the first plate body and the second plate body respectively having surfaces to carry the substrate. The first plate is movable between a first position and a second position located in the upper space of the second plate. The substrate is loaded on the first plate in the first position, and the substrate is unloaded from the first plate and placed on the surface of the second plate in the second position.
在一實施例中，第一板體與第二板體為加熱板以加熱基底，且加熱板的表面具有不同的加熱溫度。In an embodiment, the first plate and the second plate are heating plates to heat the substrate, and the surfaces of the heating plates have different heating temperatures.
在一實施例中，第二板體配置有基底升降工具(substrate lifting/lowering means)。基底升降工具在第二位置將基底自第一板體的表面升起，以將基底從第一板體卸載，並使基底下降以將基底放在第二板體的表面上。在此實施例中，升降工具可包括一組可伸長及收回的頂針，第一板體中具有一組間隙，間隙會向第一板體的移動方向延伸並在第一板體的移動方向上與頂針對齊；而當第一板體在第二位置時，頂針可穿過間隙而伸長。第一板體也可配置一組頂針，當第一板體在第一位置時，頂針可穿過第一板體中的間隙而伸長，且頂針可收回。In an embodiment, the second plate body is provided with a substrate lifting/lowering means. The substrate lifting tool raises the substrate from the surface of the first plate in the second position to unload the substrate from the first plate and lower the substrate to place the substrate on the surface of the second plate. In this embodiment, the lifting tool can include a set of extensible and retractable thimbles, the first plate having a set of gaps therein, the gap extending in the direction of movement of the first plate and in the direction of movement of the first plate The top is aligned with the top; and when the first plate is in the second position, the thimble can be elongated through the gap. The first plate body can also be configured with a set of thimbles. When the first plate body is in the first position, the thimble can be extended through the gap in the first plate body, and the thimble can be retracted.
在一實施例中，上述之設備更包括具有表面以承載基底之第三板體，且第三板體可以在第二位置與第三位置之間移動，其中在將基底從第二板體卸載之後，在第二位置將基底負載於第三板體的表面上。第一板體與第二板體可以是加熱板以加熱基底，加熱板的表面具有不同的加熱溫度，且第三板體是冷卻板以冷卻基底。In an embodiment, the apparatus further includes a third plate having a surface to carry the substrate, and the third plate is movable between the second position and the third position, wherein the substrate is unloaded from the second plate Thereafter, the substrate is loaded on the surface of the third plate in the second position. The first plate and the second plate may be heating plates to heat the substrate, the surfaces of the heating plates have different heating temperatures, and the third plate is a cooling plate to cool the substrate.
在一實施例中，當裝置還包括第三板體時，第二板體配置有基底升降工具。基底升降工具將基底自第一板體的表面升起以將基底從第一板體卸載；使基底下降以將基底放在第二板體的表面上；將基底自第二板體的表面升起以將基底從第二板體卸載；以及在將基底自第二板體的表面升起與將第三板體移至第二位置之後，使基底下降以將基底放在第三板體的表面上。In an embodiment, when the device further includes a third plate, the second plate is configured with a substrate lifting tool. The substrate lifting tool lifts the substrate from the surface of the first plate to unload the substrate from the first plate; lowers the substrate to place the substrate on the surface of the second plate; and lifts the substrate from the surface of the second plate Ejecting the substrate from the second plate; and after lifting the substrate from the surface of the second plate and moving the third plate to the second position, lowering the substrate to place the substrate on the third plate On the surface.
在一實施例中，當裝置包括第三板體且第二板體配置有基底升降工具時，升降工具包括一組可伸長及收回的頂針，第一板體中具有一組間隙，間隙會向第一板體的移動方向延伸並在第一板體的移動方向上與頂針對齊；第三板體中具有一組間隙，間隙會向第三板體的移動方向延伸並在第三板體的移動方向上與頂針對齊；而當第一板體或第三板體在第二位置時，頂針可穿過第一板體或第三板體中的間隙而伸長。第一板體也可配置一組頂針，當第一板體在第一位置時，頂針可穿過第一板體中的間隙而伸長，且頂針可收回。第三板體也可配置一組頂針，當第三板體在第三位置時，頂針可穿過第三板體中的間隙而伸長，且頂針可收回。In an embodiment, when the device comprises a third plate body and the second plate body is provided with a base lifting tool, the lifting tool comprises a set of extensible and retractable thimbles, the first plate body having a set of gaps, the gap will be The moving direction of the first plate body extends and is aligned with the top in the moving direction of the first plate body; the third plate body has a set of gaps, and the gap extends to the moving direction of the third plate body and is in the third plate body The moving direction is aligned with the top; and when the first plate or the third plate is in the second position, the thimble can be elongated through the gap in the first plate or the third plate. The first plate body can also be configured with a set of thimbles. When the first plate body is in the first position, the thimble can be extended through the gap in the first plate body, and the thimble can be retracted. The third plate body can also be configured with a set of thimbles. When the third plate body is in the third position, the thimble can be extended through the gap in the third plate body, and the thimble can be retracted.
在一實施例中，當裝置包括第三板體時，第一板體、第二板體與第三板體會在單一方向上依序排列。在另一實施例中，第一板體與第二板體會在第一方向上排列，第二板體與第三板體會在第二方向上排列，其中第一方向與第二方向不同。In an embodiment, when the device includes the third plate body, the first plate body, the second plate body, and the third plate body are sequentially arranged in a single direction. In another embodiment, the first plate and the second plate are aligned in the first direction, and the second plate and the third plate are aligned in the second direction, wherein the first direction is different from the second direction.
在一實施例中，上述所傳送的基底為晶圓。In one embodiment, the substrate being transferred is a wafer.
由於直接使用加板體來傳送基底遠快於使用機器手臂，因此使用本發明的傳送方法或裝置可顯著減少傳送時間。如此一來，藉由將此方法應用於使用兩個或更多數量加熱板的熱製程，可使熱製程的產能獲得改善。Since the transfer of the substrate directly using the plate body is much faster than the use of the robotic arm, the transfer time can be significantly reduced using the transfer method or apparatus of the present invention. As a result, the thermal process throughput can be improved by applying this method to a thermal process using two or more heater plates.
此外，當本發明之傳送方法應用於需將基底傳送至設定在不同溫度的兩個或更多數量加熱板之間的熱製程時，基於顯著減少傳送時間而可有效減少傳送過程中溫度的下降，因而更容易控制熱劑量。因此，當熱製程為兩步驟光阻再熱流製程以縮減開口圖案時，更容易控制開口的縮減與關鍵尺寸(CD)。In addition, when the transfer method of the present invention is applied to a thermal process in which a substrate needs to be transferred between two or more heating plates set at different temperatures, the temperature drop during transfer can be effectively reduced based on a significant reduction in transfer time. Thus, it is easier to control the thermal dose. Therefore, when the thermal process is a two-step photoresist reheat process to reduce the opening pattern, it is easier to control the reduction of the opening and the critical dimension (CD).
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
下述實施例是用來進一步說明本發明，但並非用以限定本發明之範圍。舉例來說，雖然實施例中進行傳送的基底為後續預在加熱板上加熱的晶圓，但考慮到傳送機制，也可以選擇性地使用需要在任何其他種類板體上進行任何其他種類處理的任何其他種類基底。再者，雖然在各實施例中基底升降工具包括一組頂針，但在其他實施例中也可以選擇性地包括另外的機構。The following examples are intended to further illustrate the invention but are not intended to limit the scope of the invention. For example, although the substrate to be transferred in the embodiment is a wafer that is subsequently preheated on the heating plate, it is also possible to selectively use any other kind of processing on any other kind of plate in consideration of the transfer mechanism. Any other kind of substrate. Moreover, while the substrate lifting tool includes a set of thimbles in various embodiments, additional mechanisms may alternatively be included in other embodiments.
另外，兩個加熱板的排列方向、第二加熱板與冷卻板的排列方向不一定相同或是相互垂直。不可動加熱板的高度也可以接近於可動加熱板與可動冷卻板在其原始位置的高度。而且，可動加熱板與冷卻板不僅可以水平移動，也可以利用不同的機構稍微垂直移動以越過第二加熱板。In addition, the arrangement direction of the two heating plates and the arrangement direction of the second heating plate and the cooling plate are not necessarily the same or perpendicular to each other. The height of the non-movable heating plate can also be close to the height of the movable heating plate and the movable cooling plate at their original positions. Moreover, the movable heating plate and the cooling plate can be moved not only horizontally but also slightly vertically by different mechanisms to pass over the second heating plate.
此外，雖然任一實施例中的熱製程使用兩個加熱板分別進行兩次加熱步驟，本發明的基底傳送方法可容易地應用於使用三個或更多數量加熱板的任何熱製程，以進行三次或更多次加熱步驟，其中一個或多個加熱板可以移動。Further, although the thermal process in any of the embodiments uses two heating plates to perform two heating steps separately, the substrate transfer method of the present invention can be easily applied to any thermal process using three or more heating plates for performing Three or more heating steps in which one or more of the heating plates can be moved.
圖2是依照本發明第一實施例之使用兩個加熱板的熱製程設備的上視示意圖與沿著A-A’線段的剖面示意圖。Figure 2 is a top plan view and a cross-sectional view along line A-A' of a thermal process apparatus using two heating plates in accordance with a first embodiment of the present invention.
請參照圖2，設備200包括第一加熱板210、第二加熱板220、冷卻板230以及兩個軌道240，其中第一加熱板210、第二加熱板220以及冷卻板230在單一方向上依序排列。第一加熱板210配置有可以伸長(虛線輪廓)及收回(實線部)的三根頂針212，第二加熱板220配置有可以伸長(虛線輪廓)及收回(實線部)的三根頂針222，冷卻板230配置有可以伸長(虛線輪廓)及收回(實線部)的三根頂針232。第一加熱板210中具有兩個間隙214，且三根頂針212可以穿過間隙214而伸長。冷卻板230中具有兩個間隙234，且三根頂針232可以穿過間隙234而伸長。Referring to FIG. 2, the apparatus 200 includes a first heating plate 210, a second heating plate 220, a cooling plate 230, and two rails 240, wherein the first heating plate 210, the second heating plate 220, and the cooling plate 230 are in a single direction. Ordering. The first heating plate 210 is provided with three thimbles 212 that can be extended (dashed outline) and retracted (solid line), and the second heating plate 220 is provided with three thimbles 222 that can be extended (dashed outline) and retracted (solid line). The cooling plate 230 is provided with three ejector pins 232 which are extensible (dashed outline) and retracted (solid line). There are two gaps 214 in the first heating plate 210, and the three thimbles 212 can be elongated through the gap 214. There are two gaps 234 in the cooling plate 230, and the three thimbles 232 can be elongated through the gap 234.
第一加熱板210可以沿著軌道240移動至第二加熱板220上方，接著再移動回去。第一加熱板210中的各間隙214會向第一加熱板210的移動方向延伸，且第二加熱板220的頂針222會在移動方向上對齊第一加熱板210中的間隙214。如此一來，當第一加熱板210在第二加熱板220上方時，頂針222可以穿過間隙214而伸長以接觸基底(未繪示)；而當頂針222伸長且第一加熱板210被移動至第二加熱板220上方時，間隙214使頂針222得以通過。The first heating plate 210 can be moved along the rail 240 above the second heating plate 220 and then moved back. Each gap 214 in the first heating plate 210 extends toward the moving direction of the first heating plate 210, and the thimble 222 of the second heating plate 220 aligns the gap 214 in the first heating plate 210 in the moving direction. As such, when the first heating plate 210 is above the second heating plate 220, the thimble 222 can be elongated through the gap 214 to contact the substrate (not shown); and when the thimble 222 is extended and the first heating plate 210 is moved The gap 214 allows the ejector pin 222 to pass over the second heating plate 220.
冷卻板230可以在相同於第一加熱板210移動方向的方向上沿著軌道240移動至第二加熱板220上方，接著再移動回去。冷卻板230中的各間隙234會向冷卻板230的移動方向延伸，且第二加熱板220的頂針222會在移動方向上對齊冷卻板230中的間隙234。因此，當冷卻板230在第二加熱板220上方時，頂針222可以穿過間隙234而伸長以接觸基底(未繪示)；而當頂針222伸長且冷卻板230被移動至第二加熱板220上方時，間隙234使頂針222得以通過。The cooling plate 230 may be moved along the rail 240 to the second heating plate 220 in the same direction as the moving direction of the first heating plate 210, and then moved back. Each gap 234 in the cooling plate 230 may extend toward the moving direction of the cooling plate 230, and the thimble 222 of the second heating plate 220 may align with the gap 234 in the cooling plate 230 in the moving direction. Therefore, when the cooling plate 230 is above the second heating plate 220, the thimble 222 can be elongated through the gap 234 to contact the substrate (not shown); and when the thimble 222 is elongated and the cooling plate 230 is moved to the second heating plate 220 Above the gap 234 allows the thimble 222 to pass.
圖3A至圖3I說明依照第一實施例之使用兩個加熱板的熱製程，其中熱製程使用如圖2所示之設備200。3A through 3I illustrate a thermal process using two heating plates in accordance with a first embodiment, wherein the thermal process uses apparatus 200 as shown in FIG.
請參照圖3A，在初始狀態時，可動第一加熱板210與可動冷卻板230皆保持在其原始位置，且全部的頂針212、222、232都是收回的。Referring to FIG. 3A, in the initial state, both the movable first heating plate 210 and the movable cooling plate 230 are maintained in their original positions, and all of the ejector pins 212, 222, 232 are retracted.
請參照圖2與圖3B，第一加熱板210的頂針212穿過第一加熱板210中的間隙214而伸長。利用如機器手臂之承載裝置將晶圓10放在頂針212上，晶圓10上例如是具有預進行再熱流之圖案化光阻層。圖案化光阻層中具有預進行尺寸縮減的開口(如圖1所示)，其中開口例如是接觸窗開口。Referring to FIGS. 2 and 3B, the thimble 212 of the first heating plate 210 is elongated through the gap 214 in the first heating plate 210. The wafer 10 is placed on a thimble 212 by a carrier such as a robotic arm, for example, a patterned photoresist layer having a pre-heat reflow. The patterned photoresist layer has an opening that is pre-sized to shrink (as shown in Figure 1), wherein the opening is, for example, a contact opening.
請參照圖3C，收回第一加熱板210的頂針212以將晶圓10放在第一加熱板210上，並在第一溫度下對晶圓10進行持續第一期間的第一加熱步驟。Referring to FIG. 3C, the ejector pin 212 of the first heating plate 210 is retracted to place the wafer 10 on the first heating plate 210, and the wafer 10 is subjected to a first heating step for a first period at a first temperature.
請參照圖2與圖3D，在第一加熱步驟完成之後，第一加熱板210連同其上的晶圓10被移動至第二加熱板220的上方，且第二加熱板220的頂針222會穿過第一加熱板210中的間隙214而伸長，以將晶圓10自第一加熱板210的表面升起。Referring to FIG. 2 and FIG. 3D, after the first heating step is completed, the first heating plate 210 together with the wafer 10 thereon is moved above the second heating plate 220, and the thimble 222 of the second heating plate 220 is worn. The gap 214 in the first heating plate 210 is elongated to lift the wafer 10 from the surface of the first heating plate 210.
請參照圖2與圖3E，第一加熱板210被移回其原始位置，其中第二加熱板220的頂針222會通過第一加熱板210中的間隙214。接著，收回頂針222以將晶圓10放在第二加熱板220，並在第二溫度下對晶圓10進行持續第二期間的第二加熱步驟。此外，在將第一加熱板210移回其原始位置之後，另一片晶圓10’也可以被傳送至第一加熱板210，而能夠在晶圓10進行第二加熱步驟的同時對晶圓10’進行第一加熱步驟。如此一來，可以達到連續處理複數片基底的效果。Referring to FIGS. 2 and 3E, the first heating plate 210 is moved back to its original position, wherein the thimble 222 of the second heating plate 220 passes through the gap 214 in the first heating plate 210. Next, the thimble 222 is retracted to place the wafer 10 on the second heating plate 220, and the wafer 10 is subjected to a second heating step for a second period at a second temperature. In addition, after the first heating plate 210 is moved back to its original position, another wafer 10' may also be transferred to the first heating plate 210, and the wafer 10 can be applied to the wafer 10 while performing the second heating step. 'A first heating step is performed. In this way, the effect of continuously processing a plurality of substrates can be achieved.
如圖3D與3E所示，將晶圓10傳送至第二加熱板220所需的時間僅僅約0.5-1秒，遠少於使用機器手臂所需的時間(~8-15秒)。As shown in Figures 3D and 3E, the time required to transfer wafer 10 to second heating plate 220 is only about 0.5-1 second, which is much less than the time required to use the robotic arm (~8-15 seconds).
請參照圖2與圖3F，在第二加熱步驟完成之後，第二加熱板220的頂針222會伸長以將晶圓10自第二加熱板220升起。冷卻板230會移動至第二加熱板220與晶圓10之間，其中第二加熱板220的頂針222會通過冷卻板230中的間隙234。冷卻板230的溫度通常會被設定在小範圍內。Referring to FIG. 2 and FIG. 3F, after the second heating step is completed, the ejector pin 222 of the second heating plate 220 is elongated to lift the wafer 10 from the second heating plate 220. The cooling plate 230 will move between the second heating plate 220 and the wafer 10, wherein the thimble 222 of the second heating plate 220 will pass through the gap 234 in the cooling plate 230. The temperature of the cooling plate 230 is usually set to a small range.
請參照圖3G，收回頂針222以將晶圓10放在冷卻板230上，接著冷卻板230被移回其原始位置。之後，對晶圓10進行持續第三期間的冷卻步驟。Referring to Figure 3G, the thimble 222 is retracted to place the wafer 10 on the cooling plate 230, and then the cooling plate 230 is moved back to its original position. Thereafter, the wafer 10 is subjected to a cooling step for the third period.
當晶圓10上例如是具有預進行再熱流之圖案化光阻層時，第一溫度通常約125-135℃，第一期間約45-120秒，第二溫度約145-160℃，第二期間約45-120秒，冷卻板230的溫度約20-23℃，第三期間約45-120秒。When the wafer 10 is, for example, a patterned photoresist layer having a preheating reflow, the first temperature is typically about 125-135 ° C, the first period is about 45-120 seconds, and the second temperature is about 145-160 ° C. During the period of about 45-120 seconds, the temperature of the cooling plate 230 is about 20-23 ° C, and the third period is about 45-120 seconds.
請參照圖2與圖3H，在冷卻步驟完成之後，冷卻板230的頂針232會穿過冷卻板230中的間隙234而伸長，以將晶圓10自冷卻板230升起。Referring to FIG. 2 and FIG. 3H, after the cooling step is completed, the thimble 232 of the cooling plate 230 is elongated through the gap 234 in the cooling plate 230 to lift the wafer 10 from the cooling plate 230.
請參照圖3I，自冷卻板230升起的晶圓10例如會被機器手臂傳送到其他地方(未繪示)，且收回頂針232以使設備回到如圖3A所示之初始狀態。Referring to FIG. 3I, the wafer 10 raised from the cooling plate 230 is, for example, transferred to another place (not shown) by the robot arm, and the ejector pin 232 is retracted to return the device to the initial state as shown in FIG. 3A.
雖然在上述第一實施例中的第一加熱板、第二加熱板與冷卻板是在單一方向上依序排列，但第一加熱板與第二加熱板的排列方向可選擇性地不同於第二加熱板與冷卻板的排列方向。圖4是依照本發明第二實施例之使用兩個加熱板的此種熱製程設備400的上視示意圖，其中第一加熱板410與第二加熱板420的排列方向垂直於第二加熱板420與冷卻板430的排列方向。Although the first heating plate, the second heating plate and the cooling plate in the first embodiment are sequentially arranged in a single direction, the arrangement direction of the first heating plate and the second heating plate may be selectively different from the first The arrangement direction of the two heating plates and the cooling plates. 4 is a top plan view of such a thermal processing apparatus 400 using two heating plates in accordance with a second embodiment of the present invention, wherein the first heating plate 410 and the second heating plate 420 are arranged perpendicular to the second heating plate 420. The direction in which the cooling plates 430 are arranged.
請參照圖4，第一加熱板410配置有三根頂針412，第二加熱板420配置有三根頂針422，冷卻板430配置有三根頂針432，其中頂針412、422、432可以如前述的伸長及收回。第一加熱板410中具有兩個間隙414，且三根頂針412可穿過間隙而伸長。冷卻板430中具有三個間隙434，且三根頂針432可穿過間隙434而伸長。Referring to FIG. 4, the first heating plate 410 is provided with three thimbles 412, the second heating plate 420 is provided with three thimbles 422, and the cooling plate 430 is provided with three thimbles 432, wherein the thimbles 412, 422, 432 can be extended and retracted as described above. . The first heating plate 410 has two gaps 414 therein, and the three thimbles 412 can be elongated through the gap. There are three gaps 434 in the cooling plate 430, and the three thimbles 432 can be elongated through the gap 434.
第一加熱板410可以沿著軌道440移動至第二加熱板420上方，接著再移動回去。第一加熱板410中的各間隙414會向第一加熱板410的移動方向延伸，且第二加熱板420的頂針422會在移動方向上對齊第一加熱板410中的間隙414。因此，當第一加熱板410在第二加熱板420上方時，頂針422可以穿過間隙414而伸長以接觸基底(未繪示)；而當頂針422伸長且第一加熱板410被移動至第二加熱板420上方時，間隙414使頂針422得以通過。The first heating plate 410 can be moved along the rail 440 above the second heating plate 420 and then moved back. Each gap 414 in the first heating plate 410 extends toward the moving direction of the first heating plate 410, and the thimble 422 of the second heating plate 420 aligns the gap 414 in the first heating plate 410 in the moving direction. Therefore, when the first heating plate 410 is above the second heating plate 420, the thimble 422 can be elongated through the gap 414 to contact the substrate (not shown); and when the thimble 422 is elongated and the first heating plate 410 is moved to the first When the upper portion of the heating plate 420 is above, the gap 414 allows the thimble 422 to pass.
冷卻板430可以在垂直於第一加熱板410移動方向的方向上沿著軌道450移動至第二加熱板420上方，接著再移動回去。冷卻板430中的各間隙434會向冷卻板430的移動方向延伸，且第二加熱板420的頂針422會在移動方向上對齊冷卻板430中的間隙434。因此，當冷卻板430在第二加熱板420上方時，頂針422可穿過間隙434而伸長以接觸基底(未繪示)；而當頂針422伸長且冷卻板430被移動至第二加熱板420上方時，間隙434使頂針422得以通過。The cooling plate 430 can be moved along the rail 450 to the position above the second heating plate 420 in a direction perpendicular to the moving direction of the first heating plate 410, and then moved back. Each gap 434 in the cooling plate 430 will extend toward the moving direction of the cooling plate 430, and the thimble 422 of the second heating plate 420 will align with the gap 434 in the cooling plate 430 in the moving direction. Therefore, when the cooling plate 430 is above the second heating plate 420, the thimble 422 can be elongated through the gap 434 to contact the substrate (not shown); and when the thimble 422 is elongated and the cooling plate 430 is moved to the second heating plate 420 Above the gap 434 allows the thimble 422 to pass.
此外，雖然基底是先在可動加熱板上被加熱，基底可選擇性地先在不可動加熱板上被加熱。圖5A至圖5E說明依照本發明第三實施例之使用兩個加熱板的熱製程，其中所使用的設備包括可動第一加熱板510與第二加熱板520。第一加熱板510與第二加熱板520分別配置有頂針512、522，頂針512、522在機械上類似於第一實施例所述之頂針212、222。可動冷卻板還可以配置在緊鄰第一加熱板510之後且高於第一加熱板510，以從第一加熱板510承接並冷卻基底。或者，不可動冷卻板可以配置在緊鄰第一加熱板510之後且低於第一加熱板510，第一加熱板因而可傳送基底至冷卻板以冷卻基底。Further, although the substrate is first heated on the movable heating plate, the substrate can be selectively heated first on the non-movable heating plate. 5A through 5E illustrate a thermal process using two heating plates in accordance with a third embodiment of the present invention, wherein the apparatus used includes a movable first heating plate 510 and a second heating plate 520. The first heating plate 510 and the second heating plate 520 are respectively provided with ejector pins 512, 522 which are mechanically similar to the thimbles 212, 222 described in the first embodiment. The movable cooling plate may also be disposed immediately after the first heating plate 510 and above the first heating plate 510 to receive and cool the substrate from the first heating plate 510. Alternatively, the non-movable cooling plate may be disposed immediately after and below the first heating plate 510, which may thereby transfer the substrate to the cooling plate to cool the substrate.
請參照圖5A，在初始狀態時，可動第一加熱板510保持在其原始位置，且全部的頂針512、522都是收回的。Referring to FIG. 5A, in the initial state, the movable first heating plate 510 is held in its original position, and all of the ejector pins 512, 522 are retracted.
請參照圖5B，第二加熱板520的頂針522會伸長，並利用如機器手臂之承載裝置將晶圓10放在頂針522上。Referring to FIG. 5B, the ejector pin 522 of the second heating plate 520 is elongated, and the wafer 10 is placed on the ejector pin 522 by a carrier such as a robot arm.
請參照圖5C，收回第二加熱板520的頂針522以將晶圓10放在第二加熱板520上，並在第二加熱板520上進行第一加熱步驟。Referring to FIG. 5C, the ejector pin 522 of the second heating plate 520 is retracted to place the wafer 10 on the second heating plate 520, and a first heating step is performed on the second heating plate 520.
請參照圖5D，在第一加熱步驟之後，頂針522會伸長以將晶圓10自第二加熱板520升起。將第一加熱板510移動至第二加熱板520與晶圓10之間，其中頂針522會通過第一加熱板510中的間隙(未繪示)，就像第一實施例所述之頂針222通過冷卻板230中的間隙234。Referring to FIG. 5D, after the first heating step, the thimble 522 is elongated to lift the wafer 10 from the second heating plate 520. The first heating plate 510 is moved between the second heating plate 520 and the wafer 10, wherein the thimble 522 passes through a gap (not shown) in the first heating plate 510, like the thimble 222 of the first embodiment. Passing through the gap 234 in the cooling plate 230.
請參照圖5D與圖5E，收回頂針522以將晶圓10放在第一加熱板510上，接著第一加熱板510連同其上的晶圓10移動回到其原始位置，以進行第二加熱步驟。5D and 5E, the ejector pin 522 is retracted to place the wafer 10 on the first heating plate 510, and then the first heating plate 510 is moved back to its original position along with the wafer 10 thereon for the second heating. step.
由於直接使用加熱板來傳送基底遠快於使用機器手臂，因此使用本發明的傳送方法可顯著減少傳送時間，使得熱製程的產能獲得改善。舉例來說，在只包括兩個每次60秒的加熱步驟的熱製程中，且熱製程使用兩個加熱板以如圖3E所示之連續方式處理複數片晶圓(10、10’)，使用機器手臂的每片基底平均處理時間約68-75秒，使用可動加熱板的每片基底平均處理時間約60.5-61秒，而使用可動加熱板與機器手臂的傳送時間分別約為0.5-1與8-15秒。因此，使用可動加熱板可有助於使熱製程的產能增加約11-24%((1/60.5-1/75)/(1/75)24%，(1/61-1/68)/(1/68)11%)。Since the use of the heating plate to transfer the substrate is much faster than the use of the robot arm, the transfer method of the present invention can significantly reduce the transfer time, resulting in an improvement in the throughput of the thermal process. For example, in a thermal process that includes only two heating steps of 60 seconds each time, and the thermal process uses two heating plates to process a plurality of wafers (10, 10') in a continuous manner as shown in FIG. 3E, The average processing time per substrate using the robot arm is about 68-75 seconds, the average processing time per substrate using the movable heating plate is about 60.5-61 seconds, and the transfer time using the movable heating plate and the robot arm is about 0.5-1, respectively. With 8-15 seconds. Therefore, the use of a movable heating plate can help increase the capacity of the thermal process by approximately 11-24% ((1/60.5-1/75)/(1/75) 24%, (1/61-1/68)/(1/68) 11%).
再者，當本發明之傳送方法應用於需將基底傳送至設定在不同溫度的兩個或更多數量加熱板之間的熱製程時，基於顯著減少傳送時間而可有效減少傳送過程中溫度的下降，因而更容易控制熱劑量。因此，當熱製程為兩步驟光阻再熱流製程以縮減開口圖案時，更容易控制開口的縮減與關鍵尺寸(CD)。Furthermore, when the transfer method of the present invention is applied to a thermal process in which a substrate needs to be transferred between two or more heating plates set at different temperatures, the temperature during transfer can be effectively reduced based on a significant reduction in transfer time. Drops, making it easier to control the thermal dose. Therefore, when the thermal process is a two-step photoresist reheat process to reduce the opening pattern, it is easier to control the reduction of the opening and the critical dimension (CD).
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10、10’．．．晶圓10, 10’. . . Wafer
100．．．基底100. . . Base
110．．．圖案化光阻層110. . . Patterned photoresist layer
120．．．開口120. . . Opening
120a．．．結果開口120a. . . Result opening
200、400．．．設備200, 400. . . device
210、410、510．．．第一加熱板210, 410, 510. . . First heating plate
220、420、520．．．第二加熱板220, 420, 520. . . Second heating plate
230、430．．．冷卻板230,430. . . Cooling plate
240、440、450．．．軌道240, 440, 450. . . track
212、222、232、412、422、432、512、522．．．頂針212, 222, 232, 412, 422, 432, 512, 522. . . thimble
214、234、414、434．．．間隙214, 234, 414, 434. . . gap
T1．．．第一溫度T1. . . First temperature
T2．．．第二溫度T2. . . Second temperature
t1、t2、t3、t4．．．時間點T1, t2, t3, t4. . . Time point
圖1是習知一種兩步驟熱製程的光阻再熱流製程的溫度曲線。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a temperature profile of a conventional two-step thermal process photoresist reheat flow process.
圖2是依照本發明第一實施例之使用兩個加熱板的熱製程設備的上視示意圖與沿著A-A’線段的剖面示意圖。Figure 2 is a top plan view and a cross-sectional view along line A-A' of a thermal process apparatus using two heating plates in accordance with a first embodiment of the present invention.
圖3A至圖3I說明依照本發明第一實施例之使用兩個加熱板的熱製程。3A through 3I illustrate a thermal process using two heating plates in accordance with a first embodiment of the present invention.
圖4是依照本發明第二實施例之使用兩個加熱板的熱製程設備的上視示意圖。4 is a top plan view of a thermal process apparatus using two heating plates in accordance with a second embodiment of the present invention.
圖5A至圖5E說明依照本發明第三實施例之使用兩個加熱板的熱製程。5A through 5E illustrate a thermal process using two heating plates in accordance with a third embodiment of the present invention.
200．．．設備200. . . device
210．．．第一加熱板210. . . First heating plate
220．．．第二加熱板220. . . Second heating plate
230．．．冷卻板230. . . Cooling plate
240．．．軌道240. . . track
212、222、232．．．頂針212, 222, 232. . . thimble
214、234．．．間隙214, 234. . . gap
Claims (13)
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| TWI489580B true TWI489580B (en) | 2015-06-21 |
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| CN101142656A (en) * | 2004-12-22 | 2008-03-12 | 应用材料公司 | Cluster tool architecture for processing a substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101142656A (en) * | 2004-12-22 | 2008-03-12 | 应用材料公司 | Cluster tool architecture for processing a substrate |
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