TWI487128B

TWI487128B - Innivated nanocrystalline silicon thin film solar cell

Info

Publication number: TWI487128B
Application number: TW099127917A
Authority: TW
Inventors: Yong Zhi Chen; Tzu Ching Hsu; Min Chuan Wang; Der Jun Jan; Chi Fong Ai
Original assignee: Iner Aec Executive Yuan
Priority date: 2010-08-20
Filing date: 2010-08-20
Publication date: 2015-06-01
Also published as: TW201210034A

Description

一種新穎的堆疊式奈米晶矽薄膜太陽電池結構Novel stacked nanocrystalline silicon solar cell structure

一種新穎的堆疊式奈米晶矽薄膜太陽電池結構，藉由不同奈米晶矽之晶粒大小之變化，於元件內形成不同能隙之吸收層，分段吸收太陽光譜上之光能以轉換為電能。A novel stacked nanocrystalline silicon solar cell structure, which forms absorption layers of different energy gaps in the element by different crystal grain sizes of different nanocrystalline crystals, and absorbs light energy in the solar spectrum in stages to convert For electric energy.

為了使矽薄膜太陽電池可充分利用整個太陽光譜，其中一種方法為堆疊不同能隙之子元件於同一個太陽電池元件中，其實施方式主要分為兩種：第一種為非晶矽與微晶矽之堆疊，然而該方法會面臨非晶矽劣化及電流匹配之問題；第二種方法為在非晶矽薄膜中摻雜鍺，以鍺含量調整能隙大小，然而該方法由於摻雜氣體(鍺化物)之使用，不論在原料或製程設備上都將提升生產成本。In order to make the tantalum solar cell fully utilize the entire solar spectrum, one of the methods is to stack the sub-components of different energy gaps into the same solar cell element. The implementation is mainly divided into two types: the first one is amorphous germanium and microcrystalline. Stacking, however, this method faces the problem of amorphous germanium degradation and current matching; the second method is to dope germanium in the amorphous germanium film, and adjust the energy gap size with germanium content, however, the method is due to doping gas ( The use of telluride) will increase production costs in both raw materials and process equipment.

一種新穎的堆疊式奈米晶矽薄膜太陽電池結構，其包含有：一基板；一第一透明導電層，係形成於基板之上；一第一半導體層，係形成於該第一透明導電層之上；一第二半導體層，係形成於該第一半導體層之上，其奈米晶矽之晶粒尺寸小於該第一半導體層之奈米晶矽之晶粒尺寸；一第三半導體層，係形成於該第二半導體層之上，其奈米晶矽之晶粒尺寸小於該第二半導體層之奈米晶矽之晶粒尺寸；一第二透明導電層，係形成於該第三半導體層之上。A novel stacked nanocrystalline thin film solar cell structure comprising: a substrate; a first transparent conductive layer formed on the substrate; a first semiconductor layer formed on the first transparent conductive layer a second semiconductor layer formed on the first semiconductor layer, the nanocrystalline crystal grain size of which is smaller than the crystal grain size of the nanocrystalline germanium of the first semiconductor layer; a third semiconductor layer Formed on the second semiconductor layer, the crystal grain size of the nanocrystalline germanium is smaller than the grain size of the nanocrystalline germanium of the second semiconductor layer; a second transparent conductive layer is formed in the third Above the semiconductor layer.

以下將參照隨附之圖式來描述本發明為達成目的所使用的技術手段與功效，而以下圖式所列舉之實施例僅為輔助說明，以利　貴審查委員瞭解，但本案之技術手段並不限於所列舉圖式。The technical means and efficacy of the present invention for achieving the object will be described below with reference to the accompanying drawings, and the embodiments listed in the following drawings are only for the purpose of explanation, and are to be understood by the reviewing committee, but the technical means of the present invention are not Limited to the listed figures.

再請參閱圖一所示，係為一種新穎的堆疊式奈米晶矽薄膜太陽電池結構示意圖，其包含有：一基板10。Referring to FIG. 1 again, it is a schematic diagram of a novel stacked nanocrystalline silicon solar cell structure, which comprises: a substrate 10.

一第一透明導電層11，係形成於基板之上。A first transparent conductive layer 11 is formed on the substrate.

一第一半導體層12，係形成於該第一透明導電層11之上，其係依序由n型、i型、p型奈米晶矽構成，其中i型奈米晶矽之晶粒尺寸為>15nm。A first semiconductor layer 12 is formed on the first transparent conductive layer 11 and is sequentially composed of n-type, i-type, and p-type nanocrystals, wherein the grain size of the i-type nanocrystals Is >15nm.

一第二半導體層13，係形成於該第一半導體層12之上，其係依序由n型、i型、p型奈米晶矽構成，其中i型奈米晶矽之晶粒尺寸為5~15nm，小於該第一半導體層12之i型奈米晶矽之晶粒尺寸。A second semiconductor layer 13 is formed on the first semiconductor layer 12, and is sequentially composed of n-type, i-type, and p-type nanocrystals, wherein the grain size of the i-type nanocrystal is 5~15 nm, which is smaller than the grain size of the i-type nanocrystals of the first semiconductor layer 12.

一第三半導體層14，係形成於該第二半導體層13之上，其係依序由n型、i型、p型奈米晶矽構成，其中i型奈米晶矽之晶粒尺寸為<5nm，小於該第二半導體層13之i型奈米晶矽之晶粒尺寸。A third semiconductor layer 14 is formed on the second semiconductor layer 13, which is sequentially composed of n-type, i-type, and p-type nanocrystals, wherein the grain size of the i-type nanocrystal is <5 nm, smaller than the grain size of the i-type nanocrystal of the second semiconductor layer 13.

一第二透明導電層15，係形成於該第三半導體層14之上。A second transparent conductive layer 15 is formed on the third semiconductor layer 14.

由於不同之奈米晶矽之晶粒尺寸產生不同之量子侷限效應，導致於各半導體層吸收能隙不同：該第一半導體層12吸收之能隙小於該第二半導體層13吸收之能隙，該第二半導體層13吸收之能隙小於該第三半導體層14，當陽光照入該太陽電池結構，首先由能隙最高之該第三半導體層14吸收藍色及其以下波長之陽光，接著由該第二半導體層13吸收中間波段之綠光，最後由該第一半導體層12吸收紅色及其以上波長之陽光。Since the grain size of the different nanocrystalline crystals has different quantum confinement effects, the absorption gaps of the semiconductor layers are different: the energy gap absorbed by the first semiconductor layer 12 is smaller than the energy gap absorbed by the second semiconductor layer 13, The second semiconductor layer 13 absorbs less than the third semiconductor layer 14. When sunlight enters the solar cell structure, the third semiconductor layer 14 having the highest energy gap first absorbs sunlight of blue and below wavelengths, and then The second semiconductor layer 13 absorbs green light in the intermediate wavelength band, and finally the first semiconductor layer 12 absorbs sunlight of red and above.

再請參閱圖二所示，係為奈米晶矽之晶粒尺寸對能隙之關係圖，由圖可看出當奈米晶矽之晶粒尺寸越大則能隙越小。Referring to FIG. 2 again, it is the relationship between the grain size and the energy gap of the nanocrystalline crystal. It can be seen from the figure that the smaller the crystal grain size of the nanocrystalline crystal, the smaller the energy gap.

惟以上所述者，僅為本發明之實施例而已，當不能以之限定本發明所實施之範圍。即大凡依本發明權利要求所作之均等變化與修飾，皆應仍屬於本發明專利涵蓋之範圍內，謹請　貴審查委員明鑑，並祈惠准，是所至禱。However, the above description is only for the embodiments of the present invention, and the scope of the invention is not limited thereto. That is, the equivalent changes and modifications made in accordance with the claims of the present invention should still fall within the scope of the patent of the present invention. I would like to ask your review committee to give a clear understanding and pray for it.

1．．．新穎的堆疊式奈米晶矽薄膜太陽電池結構1. . . Novel stacked nanocrystalline silicon solar cell structure

10．．．基板10. . . Substrate

11．．．第一透明導電層11. . . First transparent conductive layer

12．．．第一半導體層12. . . First semiconductor layer

13．．．第二半導體層13. . . Second semiconductor layer

14．．．第三半導體層14. . . Third semiconductor layer

15．．．第二透明導電層15. . . Second transparent conductive layer

圖一係為一種新穎的堆疊式奈米晶矽薄膜太陽電池結構示意圖Figure 1 is a schematic diagram of a novel stacked nanocrystalline silicon solar cell structure.

圖二係為奈米晶矽之晶粒尺寸對能隙之關係圖Figure 2 is the relationship between the grain size and the energy gap of nanocrystalline germanium.

10．．．基板10. . . Substrate

11．．．第一透明導電層11. . . First transparent conductive layer

12．．．第一半導體層12. . . First semiconductor layer

13．．．第二半導體層13. . . Second semiconductor layer

14．．．第三半導體層14. . . Third semiconductor layer

15．．．第二透明導電層15. . . Second transparent conductive layer

Claims

一種新穎的堆疊式奈米晶矽薄膜太陽電池結構，其包含有：一基板；一第一透明導電層，係形成於基板之上；一第一半導體層，係形成於該第一透明導電層之上；一第二半導體層，係形成於該第一半導體層之上，其奈米晶矽之晶粒尺寸小於該第一半導體層之奈米晶矽之晶粒尺寸；一第三半導體層，係形成於該第二半導體層之上，其奈米晶矽之晶粒尺寸小於該第二半導體層之奈米晶矽之晶粒尺寸；一第二透明導電層，係形成於該第三半導體層之上。其中該第一半導體層之i型奈米晶矽之晶粒尺寸為>15nm，該第二半導體層之i型奈米晶矽之晶粒尺寸為5~15nm，該第三半導體層之i型奈米晶矽之晶粒尺寸為<5nm。 A novel stacked nanocrystalline thin film solar cell structure comprising: a substrate; a first transparent conductive layer formed on the substrate; a first semiconductor layer formed on the first transparent conductive layer a second semiconductor layer formed on the first semiconductor layer, the nanocrystalline crystal grain size of which is smaller than the crystal grain size of the nanocrystalline germanium of the first semiconductor layer; a third semiconductor layer Formed on the second semiconductor layer, the crystal grain size of the nanocrystalline germanium is smaller than the grain size of the nanocrystalline germanium of the second semiconductor layer; a second transparent conductive layer is formed in the third Above the semiconductor layer. Wherein the grain size of the i-type nanocrystalline germanium of the first semiconductor layer is >15 nm, the grain size of the i-type nanocrystalline germanium of the second semiconductor layer is 5-15 nm, and the i-type of the third semiconductor layer The grain size of the nanocrystalline crystal is <5 nm.

如申請專利範圍第1項所述之一種新穎的堆疊式奈米晶矽薄膜太陽電池結構，其中該第一半導體層、該第二半導體層及該第三半導體層係依序由n型、i型、p型奈米晶矽構成。The novel stacked nanocrystalline thin film solar cell structure according to claim 1, wherein the first semiconductor layer, the second semiconductor layer and the third semiconductor layer are sequentially n-type, i Type, p-type nanocrystalline crystal.