TWI484574B - Method for repairing driver circuit structure - Google Patents
Method for repairing driver circuit structure Download PDFInfo
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Description
本發明係關於一種整合於顯示面板之閘極驅動電路結構(gate driver-on-array,GOA)，更特別關於一種可修補設計的閘極驅動電路結構及應用其之顯示面板。The present invention relates to a gate driver-on-array (GOA) integrated in a display panel, and more particularly to a gate drive circuit structure of a repairable design and a display panel using the same.
在科技發展日新月異的時代中，液晶顯示器已廣泛應用於電子顯示產品如電視、電腦螢幕、筆記靈電腦、行動電話或個人數位助理等。液晶顯示器具有資料驅動器、掃描驅動器、及液晶顯示面板，其中液晶顯示面板具有畫素陣列，而掃描驅動器係用以依序開啟畫素陣列中對應的畫素列，以將資料驅動器輸出之畫素資料傳送至畫素，進而顯示影像。In the era of rapid technological development, liquid crystal displays have been widely used in electronic display products such as televisions, computer screens, notebook computers, mobile phones or personal digital assistants. The liquid crystal display has a data driver, a scan driver, and a liquid crystal display panel, wherein the liquid crystal display panel has a pixel array, and the scan driver is used to sequentially open corresponding pixel columns in the pixel array to output the pixel of the data driver. The data is transferred to the pixels to display the image.
在目前眾多的面板設計中，大部份採用閘極驅動器與源極驅動器產生閘極脈衝訊號與資料訊號。在玻璃上製作電路的製程，多以低溫多晶矽(LTPS)的設計為主，主要原因是LTPS製程的多晶矽擁有較高的遷移率(mobility)，因此這種設計而成的電路可行性較高。但為了降低成本，即使是遷移率極低的非晶矽製程，也漸漸將電路設計在玻璃基板上，如閘極驅動之位移暫存器(shift register)，即所謂的整合驅動電路。In many current panel designs, most of the gate drivers and source drivers generate gate pulse signals and data signals. The process of making circuits on glass is mostly based on the design of low temperature polysilicon (LTPS). The main reason is that the polysilicon of the LTPS process has a high mobility, so the design of the circuit is highly feasible. However, in order to reduce the cost, even the amorphous germanium process with extremely low mobility has gradually designed the circuit on a glass substrate, such as a gate-driven shift register, a so-called integrated drive circuit.
將位移暫存器電路設計於玻璃基板上(GOA；Gate on array)的產品，在工廠之陣列基板端(array端)進行各道製程 時，往往因為製程穩定度的影響，使微粒(Particle)落在位移暫存器中的某一電晶體上而使整組的電路無法運作。這將會嚴重影響GOA產品的良率及成本問題。The displacement register circuit is designed on a glass substrate (GOA; Gate on array), and the process is performed on the array substrate end (array end) of the factory. At times, due to the influence of process stability, the particles fall on a certain transistor in the displacement register, so that the entire circuit cannot be operated. This will seriously affect the yield and cost of GOA products.
本發明提供一種驅動電路結構之修補方法，包括檢測驅動電路結構，找出失效電晶體；隔絕失效電晶體與第一電極線及/或第二電極線之電性連接；以及電性連接備用電晶體之源極與第一電極線及/或電性連接備用電晶體之汲極與第二電極線；其中失效電晶體與電性連接之備用電晶體的數目相同。The invention provides a repairing method for a driving circuit structure, comprising: detecting a driving circuit structure, finding a failed transistor; electrically connecting the failed transistor to the first electrode line and/or the second electrode line; and electrically connecting the standby power The source of the crystal is electrically connected to the first electrode line and/or the drain of the standby transistor and the second electrode line; wherein the number of the failed transistor is the same as the number of the standby transistors electrically connected.
10‧‧‧基板10‧‧‧Substrate
11A‧‧‧備用電晶體11A‧‧‧Backup transistor
11B‧‧‧電晶體11B‧‧‧Optoelectronics
13A‧‧‧閘極電極層13A‧‧‧gate electrode layer
13B‧‧‧接觸墊13B‧‧‧Contact pads
14‧‧‧第一絕緣層14‧‧‧First insulation
15‧‧‧半導體層15‧‧‧Semiconductor layer
17A‧‧‧第一電極線17A‧‧‧First electrode line
17B‧‧‧第二電極線17B‧‧‧Second electrode line
19A‧‧‧備用電晶體之汲極19A‧‧‧Battery of spare transistor
19B‧‧‧電晶體之汲極19B‧‧‧Bunge of the transistor
21‧‧‧源極21‧‧‧ source
23‧‧‧第二絕緣層23‧‧‧Second insulation
100‧‧‧顯示面板100‧‧‧ display panel
102‧‧‧顯示區102‧‧‧ display area
104‧‧‧周邊線路區104‧‧‧ Peripheral area
110‧‧‧顯示畫素110‧‧‧ Display pixels
L‧‧‧備用電晶體之汲極延伸至接觸墊上方之部份的長度The length of the portion of the L•‧‧ spare transistor that extends above the contact pad
W1 ‧‧‧第二電極線之寬度W 1 ‧‧‧Width of the second electrode line
W2 ‧‧‧接觸墊寬度W 2 ‧‧‧ contact pad width
W3 ‧‧‧備用電晶體之汲極延伸至接觸墊上方之部份的寬度W 3 ‧‧‧The width of the portion of the spare transistor that extends above the contact pad
W4 ‧‧‧備用電晶體之汲極寬度W 4 ‧‧‧The width of the drain of the spare transistor
‧‧‧電晶體汲極與第二電極線電性連接的位置 ‧‧‧The position where the transistor diode is electrically connected to the second electrode line
⊕‧‧‧備用電晶體/第二電極線與連接墊電性連接的位置⊕‧‧‧The position where the spare transistor/second electrode wire is electrically connected to the connection pad
第1圖係本發明一實施例中，顯示面板之示意圖。1 is a schematic view of a display panel in an embodiment of the present invention.
第2圖係本發明一實施例中，驅動電路結構之電路圖。Fig. 2 is a circuit diagram showing the structure of a driving circuit in an embodiment of the present invention.
第3圖係本發明一實施例中，驅動電路結構之上視圖。Figure 3 is a top plan view of a drive circuit structure in an embodiment of the present invention.
第4圖係本發明一實施例中，驅動電路結構之a-b切線剖視圖。Figure 4 is a cross-sectional view taken along line a-b of the drive circuit structure in an embodiment of the present invention.
第5圖係本發明一實施例中，修復動作前的驅動電路結構之c-d切線剖視圖。Fig. 5 is a cross-sectional view taken along line c-d of the drive circuit structure before the repair operation in an embodiment of the present invention.
第6圖係本發明一實施例中，修復動作後的驅動電路結構之c-d切線剖視圖。Figure 6 is a cross-sectional view taken along line c-d of the drive circuit structure after the repair operation in an embodiment of the present invention.
第7圖係本發明一實施例中，驅動電路結構之上視圖。Figure 7 is a top plan view of a drive circuit structure in an embodiment of the present invention.
第8圖係本發明一實施例中，驅動電路結構之上視圖。Figure 8 is a top plan view showing the structure of a driving circuit in an embodiment of the present invention.
如第1圖所示，顯示面板100具有顯示區102及位於顯示區外的的周邊線路區104。顯示區102內有多個顯示畫素110，而在周邊線路區104中具有閘極驅動電路結構。閘極驅動電路結構的設計具有高的通道寬長比，有助於提升顯示面板100的解析度以及反應速率。然而，閘極驅動電路結構的電極若受到汙染物的汙染而發生短路時不易進行修補，可能使顯示面板100中部份顯示畫素110的顯示效果受到影響。因此，本發明提供一種閘極驅動電路結構(位移暫存器)的設計，使閘極驅動電路結構由多個並聯的薄膜電晶體結構所組成。即使閘極驅動電路結構中部份導電圖案因製程中產生的微粒發生短路現象，亦可對閘極驅動電路結構進行修補，使顯示面板100的良率提升，進而改善畫面品質。As shown in FIG. 1, the display panel 100 has a display area 102 and a peripheral line area 104 located outside the display area. The display area 102 has a plurality of display pixels 110 therein, and has a gate drive circuit structure in the peripheral line area 104. The design of the gate drive circuit structure has a high channel width to length ratio, which helps to improve the resolution and reaction rate of the display panel 100. However, if the electrode of the gate driving circuit structure is short-circuited by contamination of contaminants, it is difficult to repair the electrode, and the display effect of a part of the display pixel 110 in the display panel 100 may be affected. Therefore, the present invention provides a gate drive circuit structure (displacement register) design such that the gate drive circuit structure is composed of a plurality of parallel thin film transistor structures. Even if some of the conductive patterns in the gate driving circuit structure are short-circuited due to particles generated in the process, the gate driving circuit structure can be repaired, the yield of the display panel 100 is improved, and the picture quality is improved.
如第2圖所示，係整合於顯示面板中之驅動電路結構的電路圖，可作為顯示面板之閘極驅動電路(gate on array，簡稱GOA)或位移暫存器(shift register)。驅動電路結構包括複數個電晶體11B，每一電晶體11B之源極電性連接至第一電極線17A，且每一電晶體11B之汲極電性連接至第二電極線17B。上述驅動電路結構更包括備用電晶體11A，且備用電晶體11A之源極與第一電極線17A無電性連接關係。當某一電晶體11B受到微粒污染失效時，可切斷受污染之電晶體11B之源極與第一電極線17A之電性連接，並電性連接備用電晶體11A之源極與第一電極線。如此一來，修復後的驅動電路結構之電晶體數目仍維持應有數目而不會減少。舉例來說，若驅動電路結構之電晶體11B數目為8且備用電晶體11A數目為4，製程後有2個電晶 體11B受微粒污染，則可隔絕2個受污染的電晶體11B之源極與第一電極線17A之電性連接，並電性連接2個備用電晶體之源極與第一電極線17A。如此一來，修復後的驅動電路結構之電晶體數目仍維持8個。As shown in FIG. 2, the circuit diagram of the driving circuit structure integrated in the display panel can be used as a gate on array (GOA) or a shift register of the display panel. The driving circuit structure includes a plurality of transistors 11B, the source of each of the transistors 11B is electrically connected to the first electrode line 17A, and the drain of each of the transistors 11B is electrically connected to the second electrode line 17B. The driving circuit structure further includes a backup transistor 11A, and the source of the standby transistor 11A is electrically connected to the first electrode line 17A. When a certain transistor 11B is damaged by particle contamination, the source of the contaminated transistor 11B can be electrically connected to the first electrode line 17A, and the source and the first electrode of the standby transistor 11A can be electrically connected. line. As a result, the number of transistors in the repaired driver circuit structure remains as expected without being reduced. For example, if the number of the transistors 11B of the driving circuit structure is 8 and the number of the standby transistors 11A is 4, there are 2 electric crystals after the process. When the body 11B is contaminated by the particles, the source of the two contaminated transistors 11B can be electrically connected to the first electrode line 17A, and the source of the two backup transistors can be electrically connected to the first electrode line 17A. As a result, the number of transistors in the repaired drive circuit structure is maintained at eight.
備用電晶體11A的數目取決於製程良率的控制，當製程的微粒數目越少，備用電晶體11A占驅動電路結構之比例越低。一般來說，若備用電晶體11A太少，則可能無法完全頂替受污染的電晶體11B。但若備用電晶體11A太多，則會增加成本。在本發明一實施例中，備用電晶體11A的位置均位於驅動電路末端。在本發明另一實施例中，備用電晶體11A係插置於電晶體11B之間。The number of spare transistors 11A depends on the control of the process yield. The smaller the number of particles in the process, the lower the ratio of the standby transistor 11A to the structure of the drive circuit. In general, if the backup transistor 11A is too small, the contaminated transistor 11B may not be completely replaced. However, if the spare transistor 11A is too much, the cost will increase. In an embodiment of the invention, the position of the backup transistor 11A is located at the end of the drive circuit. In another embodiment of the invention, the backup transistor 11A is interposed between the transistors 11B.
上述修復中，除了隔絕受污染之電晶體11B之源極與第一電極線17A之電性連接外，可進一步隔絕其汲極與第二電極線17B之電性連接。In the above repair, in addition to insulating the electrical connection between the source of the contaminated transistor 11B and the first electrode line 17A, the electrical connection between the drain and the second electrode line 17B can be further insulated.
在第2圖中，修復前的備用電晶體11A之源極與第一電極線17A未電性連接。但在本發明另一實施例中，修復前的備用電晶體11A之汲極與第二電極線17B未電性連接。在本發明另一實施例中，修復前的備用電晶體11A之源極與汲極均未電性連接第一電極線17A與17B。不論採用上述何種模式，重點在於修復前之備用電晶體11A無法作用，而修復後之備用電晶體11A之源極與汲極會電性連接第一電極線17A及第二電極線17B，以頂替電性隔絕之電晶體11B。In Fig. 2, the source of the backup transistor 11A before repair is not electrically connected to the first electrode line 17A. However, in another embodiment of the present invention, the drain of the backup transistor 11A before repair is not electrically connected to the second electrode line 17B. In another embodiment of the present invention, the source and the drain of the standby transistor 11A before repair are not electrically connected to the first electrode lines 17A and 17B. Regardless of which mode is used, the focus is on the backup transistor 11A before the repair, and the source and the drain of the repaired standby transistor 11A are electrically connected to the first electrode line 17A and the second electrode line 17B. The electrically isolated transistor 11B is replaced.
如第3圖所示，係上述之驅動電路結構的上視圖，其a-b方向之切線如第4圖所示，而c-d方向之切線如第5圖所 示。值得注意的是，第3圖之驅動電路結構僅用以說明而非限縮本發明，只要能完成第2圖之電路佈局即可。舉例來說，第3圖之電路驅動結構之基板上依序為閘極層、半導體層、源極/汲極層。但在本發明其他實施例中，基板上依序為源極/汲極層、半導體層、及閘極層。As shown in Fig. 3, in the upper view of the above-described driving circuit structure, the tangent line in the a-b direction is as shown in Fig. 4, and the tangent line in the c-d direction is as shown in Fig. 5. Show. It should be noted that the driving circuit structure of FIG. 3 is only for illustrating and not limiting the present invention, as long as the circuit layout of FIG. 2 can be completed. For example, the substrate of the circuit driving structure of FIG. 3 is sequentially a gate layer, a semiconductor layer, and a source/drain layer. However, in other embodiments of the present invention, the substrate is sequentially a source/drain layer, a semiconductor layer, and a gate layer.
第3圖之驅動電路結構之形成方法如下，請一併參考第4及5圖。首先，提供基板10。基板10材質可為透光材質如玻璃、石英或其它透明材質、不透光材質如陶瓷、晶圓或其它不透明材質、或可撓性材質如塑膠、橡膠、聚酯、聚碳酸酯或其它可撓性材質。接著形成第一導電層(未圖示)於基板10上，其材質可為金屬如鈦、鉭、銀、金、鉑、銅、鋁、鉬、釹、鎢、鉻、銠、錸、釕、鈷、其他合適金屬、或上述合金；金屬氧化物如銦錫氧化物(indium tin oxide,ITO)、銦 鋅氧化物(indium zinc oxide,IZO)、或上述之多層結構。接著進行微影製程及蝕刻步驟以圖案化第一導電層，以定義閘極電極層13A及接觸墊13B。如第3圖所示，閘極電極層13A與接觸墊相隔一段距離且不電性連接。The method of forming the driving circuit structure of Fig. 3 is as follows, please refer to Figs. 4 and 5 together. First, the substrate 10 is provided. The substrate 10 may be made of a transparent material such as glass, quartz or other transparent material, an opaque material such as ceramic, wafer or other opaque material, or a flexible material such as plastic, rubber, polyester, polycarbonate or the like. Flexible material. Then, a first conductive layer (not shown) is formed on the substrate 10, and the material thereof may be metal such as titanium, tantalum, silver, gold, platinum, copper, aluminum, molybdenum, niobium, tungsten, chromium, lanthanum, cerium, lanthanum, Cobalt, other suitable metals, or alloys of the above; metal oxides such as indium tin oxide (ITO), indium zinc oxide (IZO), or a multilayer structure as described above. A lithography process and an etching step are then performed to pattern the first conductive layer to define the gate electrode layer 13A and the contact pad 13B. As shown in FIG. 3, the gate electrode layer 13A is spaced apart from the contact pads and is not electrically connected.
接著形成第一絕緣層14於閘極電極層13A及接觸墊13B上，之後形成半導體層15於閘極電極層13A上之第一絕緣層14上。第一絕緣層14之材質可為有機材質如光阻、有機矽化合物、或其它有機材質、無機材質如氮化矽、氧化矽、氮氧化矽、碳氧化矽、碳化矽或其他無機材質、或上述材質之組合。半導體層15一般為半導體材料如非晶矽、多晶矽、微晶矽、單晶矽、或上述材料之組合，其形成方式可為化學氣相沉積法 (CVD)、電漿增強化學氣相沉積法(PECVD)、快速昇溫式化學氣相沉積法(RTCVD)、超高真空化學氣相沉積法(UHV/CVD)、或分子束磊晶成長法(MBE)。Next, a first insulating layer 14 is formed on the gate electrode layer 13A and the contact pad 13B, and then a semiconductor layer 15 is formed on the first insulating layer 14 on the gate electrode layer 13A. The material of the first insulating layer 14 may be organic materials such as photoresist, organic germanium compound, or other organic materials, inorganic materials such as tantalum nitride, hafnium oxide, tantalum oxynitride, tantalum carbonitride, tantalum carbide or other inorganic materials, or A combination of the above materials. The semiconductor layer 15 is generally a semiconductor material such as amorphous germanium, polycrystalline germanium, microcrystalline germanium, single crystal germanium, or a combination of the above materials, which may be formed by chemical vapor deposition. (CVD), plasma enhanced chemical vapor deposition (PECVD), rapid temperature chemical vapor deposition (RTCVD), ultra high vacuum chemical vapor deposition (UHV/CVD), or molecular beam epitaxy ( MBE).
最後形成第二導電層(未圖示)於半導體層15上及第一絕緣層14上，其材質可為金屬如鈦、鉭、銀、金、鉑、銅、鋁、鉬、釹、鎢、鉻、銠、錸、釕、鈷、或其它金屬、上述之合金、或上述之多層結構。接著進行微影製程及蝕刻步驟以圖案化第二導電層，以定義第一電極線17A、電晶體11B與備用電晶體11A之源極21、第二電極線17B、備用電晶體11A之汲極19A、及電晶體11B之汲極19B。由第2圖可知，第一電極線17A電性連接電晶體11B與備用電晶體11A之源極21，而第二電極線17B僅電性連接電晶體11B之汲極19B。如第3圖所示，備用電晶體11A係位於電晶體11B之外側，且接觸墊13B位於第二電極線17B之末端側。第二電極線17B與部份接觸墊13B重疊，且備用電晶體11A之汲極19A延伸至部份接觸墊13B上方。為了使後續之雷射焊接(laser welding)能順利電性連接接觸墊13B、第二電極線17B、及備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份，備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份的寬度W3 大於備用電晶體11A之汲極19A的寬度W4 ，且備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份的長度L、接觸墊13B的寬度W2 、及第二電極線17B的寬度W1 相同。Finally, a second conductive layer (not shown) is formed on the semiconductor layer 15 and the first insulating layer 14, and the material thereof may be metal such as titanium, tantalum, silver, gold, platinum, copper, aluminum, molybdenum, tantalum, tungsten, Chromium, ruthenium, osmium, iridium, cobalt, or other metals, alloys of the above, or multilayer structures as described above. Then, a lithography process and an etching step are performed to pattern the second conductive layer to define the first electrode line 17A, the transistor 11B, the source 21 of the backup transistor 11A, the second electrode line 17B, and the drain of the backup transistor 11A. 19A, and the drain 19B of the transistor 11B. As can be seen from Fig. 2, the first electrode line 17A is electrically connected to the source 21 of the standby transistor 11A, and the second electrode line 17B is electrically connected only to the drain 19B of the transistor 11B. As shown in Fig. 3, the backup transistor 11A is located on the outer side of the transistor 11B, and the contact pad 13B is located on the end side of the second electrode line 17B. The second electrode line 17B overlaps with a portion of the contact pads 13B, and the drain 19A of the backup transistor 11A extends over the partial contact pads 13B. In order to enable subsequent laser welding to smoothly electrically connect the contact pad 13B, the second electrode line 17B, and the drain electrode 19A of the backup transistor 11A to a portion above the contact pad 13B, the backup transistor 11A The width W 3 of the portion of the drain electrode 19A extending above the contact pad 13B is larger than the width W 4 of the drain 19A of the standby transistor 11A, and the length of the portion of the drain electrode 19A of the standby transistor 11A extending above the contact pad 13B L, the width W 2 of the contact pad 13B, and the width W 1 of the second electrode line 17B are the same.
最後，形成第二絕緣層23覆蓋上述結構，且第二絕緣層23之材質選擇及形成方法類似第一絕緣層14，兩者可採用相同或不同材質。至此則完成本發明一實施例之驅動電路結 構。Finally, the second insulating layer 23 is formed to cover the above structure, and the material selection and formation method of the second insulating layer 23 is similar to the first insulating layer 14, and the two materials may be the same or different materials. So far, the driving circuit junction of one embodiment of the present invention is completed. Structure.
在完成上述結構後，可採用影像比對等方式確認電晶體11B是否遭到污染。若某一電晶體11B遭到污染，可採用雷射剝除的方式切斷受到微粒污染的電晶體11B之汲極19B與第二電極線17B的電性連接部份，並以雷射焊接(laser welding)等方式電性連接第二電極線17B與備用電晶體11A之汲極19A與接觸墊13B重疊的部份⊕。第5及6圖分別為雷射焊接步驟前後的結構。以雷射燒穿備用電晶體11A之汲極19A以及第二電極線17B之末端側與接觸墊13B之間的第一絕緣層14，同時熔融備用電晶體11A之汲極19A以及第二電極線17B之末端側以電性連接接觸墊13B。After the above structure is completed, it is possible to confirm whether or not the transistor 11B is contaminated by an image comparison method or the like. If a certain transistor 11B is contaminated, the electrical connection portion between the drain electrode 19B and the second electrode line 17B of the transistor 11B contaminated by the particles may be cut by laser stripping. And the portion of the second electrode line 17B and the drain electrode 19A of the backup transistor 11A overlapping the contact pad 13B is electrically connected by laser welding or the like. Figures 5 and 6 show the structure before and after the laser welding step. The first insulating layer 14 between the drain electrode 19A of the backup transistor 11A and the end side of the second electrode line 17B and the contact pad 13B is fired by the laser while melting the drain 19A and the second electrode line of the standby transistor 11A. The end side of 17B is electrically connected to the contact pad 13B.
在本發明另一實施例中，第一電極線17A可位於閘極電極層13A及半導體層15以外的部份。如此一來，備用電晶體11A之源極21可選擇性的與第一電極線17A電性隔絕，並延用第二電極線17B與接觸墊13B之設計：第一電極線17A與部份另一接觸墊(未圖示)重疊，且備用電晶體11A之源極21延伸至部份另一接觸墊(未圖示)上方。此時備用電晶體11A係位於電晶體11B之外側，且另一接觸墊(未圖示)位於第一電極線17A之末端側。第一電極線17A與部份另一接觸墊(未圖示)重疊，且備用電晶體11A之源極21延伸至部份另一接觸墊(未圖示)上方。為了使後續之雷射焊接(laser welding)能順利電性連接另一接觸墊(未圖示)、第一電極線17A、及備用電晶體11A之源極21延伸至另一接觸墊(未圖示)上方之部份，備用電晶體11A之源極21延伸至另一接觸墊(未圖示)上方之部份的寬度大於備用 電晶體11A之源極21的寬度，且備用電晶體11A之汲極19A延伸至另一接觸墊(未圖示)上方之部份的長度、另一接觸墊的寬度、及第一電極線17A的寬度相同。在完成上述結構後，可採用影像比對等方式確認電晶體11B是否遭到污染。若某一電晶體11B遭到污染，可採用雷射剝除的方式切斷受到微粒污染的電晶體11B之源極21與第一電極線17A連接的位置(未圖示)，並以雷射焊接(laser welding)等方式電性連接第一電極線17A與備用電晶體11A之源極21與另一接觸墊(未圖示)重疊的部份(未圖示)。與第5及6圖中雷射焊接步驟前後的結構類似，以雷射燒穿備用電晶體11A之源極21以及第一電極線17A之末端側與另一接觸墊(未圖示)之間的第一絕緣層14，同時熔融備用電晶體11A之源極21以及第一電極線17A之末端側以電性連接另一接觸墊(未圖示)。可以理解的是，若備用電晶體11A之源極21與第一電極線17A電性隔絕並採用另一接觸墊，則第二電極線17B可電性連接備用電晶體11A之汲極19A且不採用接觸墊13B之設計。In another embodiment of the present invention, the first electrode line 17A may be located at a portion other than the gate electrode layer 13A and the semiconductor layer 15. In this way, the source 21 of the standby transistor 11A is selectively electrically isolated from the first electrode line 17A, and the design of the second electrode line 17B and the contact pad 13B is extended: the first electrode line 17A and a portion of the other A contact pad (not shown) overlaps and the source 21 of the backup transistor 11A extends over a portion of another contact pad (not shown). At this time, the standby transistor 11A is located on the outer side of the transistor 11B, and the other contact pad (not shown) is located on the end side of the first electrode line 17A. The first electrode line 17A overlaps with a portion of another contact pad (not shown), and the source 21 of the backup transistor 11A extends over a portion of another contact pad (not shown). In order to enable subsequent laser welding to smoothly electrically connect another contact pad (not shown), the first electrode line 17A, and the source 21 of the backup transistor 11A to another contact pad (not shown) The portion above the display, the width of the portion of the source 21 of the standby transistor 11A extending over the other contact pad (not shown) is greater than the spare portion. The width of the source 21 of the transistor 11A, and the length of the portion of the backup transistor 11A that extends above the other contact pad (not shown), the width of the other contact pad, and the first electrode line 17A The width is the same. After the above structure is completed, it is possible to confirm whether or not the transistor 11B is contaminated by an image comparison method or the like. If a certain transistor 11B is contaminated, the position where the source 21 of the transistor 11B contaminated by the particles is connected to the first electrode line 17A (not shown) can be cut by laser stripping, and the laser is irradiated. A portion (not shown) in which the source electrode 21 of the first electrode line 17A and the backup transistor 11A overlaps with another contact pad (not shown) is electrically connected by means of laser welding or the like. Similar to the structure before and after the laser welding step in FIGS. 5 and 6, the source 21 of the standby transistor 11A and the end side of the first electrode line 17A and the other contact pad (not shown) are laser-fired. The first insulating layer 14 simultaneously melts the source 21 of the standby transistor 11A and the end side of the first electrode line 17A to electrically connect another contact pad (not shown). It can be understood that if the source 21 of the backup transistor 11A is electrically isolated from the first electrode line 17A and another contact pad is used, the second electrode line 17B can be electrically connected to the drain 19A of the standby transistor 11A. The design of the contact pad 13B is employed.
第3圖之驅動電路結構僅含有一個備用電晶體11A。在發明另一實施例中，可含有兩個以上的備用電晶體11A如第7圖。當超過一個電晶體11B受微粒污染而失效時，第7圖之驅動電路結構可提供一個以上的備用電晶體11A以取代一個以上的失效電晶體11B。經影像比對後，以雷射剝除法隔絕失效電晶體11B之汲極19B與第二電極線17B的連接部份，並以雷射焊接法電性連接第二電極線17B及備用電晶體11A之汲極19A與接觸墊13B重疊的部份⊕。可以理解的是，電性連接的備 用電晶體數目取決於失效的電晶體數目。以第7圖為例，若失效之電晶體11B只有一個，則只需電性連接較左側之備用電晶體11A，而不需進一步電性連接右側之備用電晶體。同樣地，第7圖之第一電極線17A可位於閘極電極層13A及半導體層15之外，如此一來，備用電晶體11A可不電性連接第一電極線17A並採用另一接觸墊(未圖示)之設計如前述。為簡潔起見在此不另行描述對應另一接觸墊(未圖示)之設計及相關修復步驟，請參考前述內容。The drive circuit structure of Fig. 3 contains only one spare transistor 11A. In another embodiment of the invention, more than two spare transistors 11A may be included as shown in FIG. When more than one transistor 11B fails due to particulate contamination, the drive circuit structure of FIG. 7 can provide more than one spare transistor 11A in place of more than one failed transistor 11B. After the image comparison, the connection portion between the drain electrode 19B of the failed transistor 11B and the second electrode line 17B is separated by laser stripping. And the portion of the second electrode line 17B and the drain electrode 19A of the backup transistor 11A overlapping the contact pad 13B is electrically connected by a laser welding method. It will be appreciated that the number of spare transistors that are electrically connected depends on the number of failed transistors. Taking Fig. 7 as an example, if there is only one transistor 11B that fails, it is only necessary to electrically connect the standby transistor 11A on the left side without further electrically connecting the standby transistor on the right side. Similarly, the first electrode line 17A of FIG. 7 may be located outside the gate electrode layer 13A and the semiconductor layer 15, so that the backup transistor 11A may be electrically connected to the first electrode line 17A and adopt another contact pad ( The design is not shown) as described above. For the sake of brevity, the design of the other contact pad (not shown) and related repair steps will not be described herein, please refer to the foregoing.
雖然第7圖之驅動電路結構可提供複數個備用電晶體，但此設計有個缺點：若有一個電晶體11B及較左側之備用電晶體11A受到污染時，仍需電性連接較左側之備用電晶體11A才能電性連接較右側之備用電晶體11A，而無法單單電性連接較右側之備用電晶體11A。如此一來，必需額外切斷左側失效之備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份與汲極19A連接部份。Although the driving circuit structure of FIG. 7 can provide a plurality of spare transistors, this design has a disadvantage: if one of the transistors 11B and the left side of the standby transistor 11A are contaminated, it is still necessary to electrically connect to the left side. The transistor 11A can be electrically connected to the standby transistor 11A on the right side, and cannot be electrically connected to the standby transistor 11A on the right side. In this way, it is necessary to additionally cut off the left side of the left-side failed backup transistor 11A and the portion of the drain 19A extending above the contact pad 13B and the connection portion of the drain 19A. .
為了解決上述備用電晶體也可能遭到污染的問題，本發明提供了一種繞線結構及對應之接觸墊結構如第8圖所示。在第8圖中，備用電晶體11A係夾設於電晶體11B間，且第二電極線17B與接觸墊13B重疊之部份具有繞線結構。繞線結構具有凸部及凹部，且繞線結構之凸部凸出第二電極線17B，且繞線部份之凹部與該接觸墊13B重疊。為了使後續之雷射焊接(laser welding)能順利電性連接接觸墊13B、第二電極線17B、及備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份，備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份的 寬度W3 大於備用電晶體11A之汲極19A的寬度W4 ，且備用電晶體11A之汲極19A延伸至該接觸墊13B上方之部份的長度L小於第二電極線17B的寬度W1 。In order to solve the problem that the above-mentioned standby transistor may also be contaminated, the present invention provides a winding structure and a corresponding contact pad structure as shown in FIG. In Fig. 8, the standby transistor 11A is interposed between the transistors 11B, and the portion where the second electrode line 17B overlaps the contact pad 13B has a winding structure. The winding structure has a convex portion and a concave portion, and the convex portion of the winding structure protrudes from the second electrode line 17B, and the concave portion of the winding portion overlaps with the contact pad 13B. In order to enable subsequent laser welding to smoothly electrically connect the contact pad 13B, the second electrode line 17B, and the drain electrode 19A of the backup transistor 11A to a portion above the contact pad 13B, the backup transistor 11A The width W 3 of the portion of the drain 19A extending over the contact pad 13B is greater than the width W 4 of the drain 19A of the backup transistor 11A, and the drain 19A of the backup transistor 11A extends to a portion above the contact pad 13B. The length L is smaller than the width W 1 of the second electrode line 17B.
在完成上述結構後，可採用影像比對等方式確認電晶體11B是否遭到污染。若某一電晶體11B遭到污染，可採用雷射剝除的方式切斷受到微粒污染的電晶體11B之汲極19B與第二電極線17B的電性連接部份，並以雷射焊接等方式電性連接第二電極線17B與接觸墊13B重疊的部份⊕，以及備用電晶體11A之汲極19A與接觸墊13B重疊的部份⊕。電性連接備用電晶體11A之汲極19A與該第二電極線17B之雷射焊接步驟可參考c-d切線之剖面圖如第5-6圖所示，係以雷射燒穿備用電晶體11A之汲極19A與接觸墊13B之間，以及第二電極線17B之繞線結構凹部與接觸墊13B之間的第一絕緣層14，同時熔融部份備用電晶體11A之汲極19A與第二電極線17B之繞線結構凹部以電性連接接觸墊13B。After the above structure is completed, it is possible to confirm whether or not the transistor 11B is contaminated by an image comparison method or the like. If a certain transistor 11B is contaminated, the electrical connection portion between the drain electrode 19B and the second electrode line 17B of the transistor 11B contaminated by the particles may be cut by laser stripping. And a portion of the second electrode line 17B overlapping the contact pad 13B and a portion ⊕ where the drain electrode 19A of the backup transistor 11A overlaps the contact pad 13B are electrically connected by laser welding or the like. The laser welding step of electrically connecting the drain electrode 19A of the standby transistor 11A and the second electrode line 17B can be referred to the sectional view of the cd tangential line as shown in FIGS. 5-6, and the laser is used to burn through the standby transistor 11A. The first insulating layer 14 between the drain 19A and the contact pad 13B, and between the winding structure recess of the second electrode line 17B and the contact pad 13B, while melting the drain 19A and the second electrode of the portion of the standby transistor 11A The winding structure recess of the wire 17B electrically connects the contact pads 13B.
當採用上述繞線設計時，可形成各自獨立的複數個備用電晶體11A。即使有部份備用電晶體11A受到微粒污染，仍可電性連接未受微粒污染之備用電晶體11A、第二電極線17B、及連接墊13B。如此一來，不需額外電性連接受污染之備用電晶體11A後，再切斷受污染之備用電晶體11A之汲極19A延伸至接觸墊13B上方之部份與汲極19A的連接部份，如第7圖所示。同樣地，第8圖之第一電極線17A可位於閘極電極層13A及半導體層15之外，並具有類似第二電極線17B之繞線結構。如此一來，位於電晶體11B之間的備用電晶體11A可不電性 連接第一電極線17A並採用另一接觸墊(未圖示)之設計如前述。為簡潔起見在此不另行描述對應另一接觸墊(未圖示)之設計及相關修復步驟，請參考前述內容。When the above-described winding design is employed, a plurality of independent backup transistors 11A can be formed independently. Even if a part of the backup transistor 11A is contaminated by particles, the standby transistor 11A, the second electrode line 17B, and the connection pad 13B which are not contaminated by the particles can be electrically connected. In this way, after the contaminated spare transistor 11A is not additionally electrically connected, the drain 19A of the contaminated spare transistor 11A is extended to the connection portion between the portion above the contact pad 13B and the drain 19A. As shown in Figure 7. Similarly, the first electrode line 17A of FIG. 8 may be located outside the gate electrode layer 13A and the semiconductor layer 15, and has a winding structure similar to the second electrode line 17B. As a result, the backup transistor 11A located between the transistors 11B can be electrically connected to the first electrode line 17A and adopts a design of another contact pad (not shown) as described above. For the sake of brevity, the design of the other contact pad (not shown) and related repair steps will not be described herein, please refer to the foregoing.
在本發明又一實施例中，可視情況需要將第8圖之繞線結構搭配第3或7圖之設計。經由上述之驅動電路結構及對應之修補方法，可確保修補後之電晶體數目不會因修補動作減少，並有效提升良率。In still another embodiment of the present invention, the winding structure of FIG. 8 may be matched with the design of FIG. 3 or 7 as the case may be. Through the above-mentioned driving circuit structure and the corresponding repairing method, it is ensured that the number of transistors after repairing is not reduced by the repairing action, and the yield is effectively improved.
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the invention has been described above in terms of several preferred embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
3A‧‧‧閘極電極層3A‧‧‧gate electrode layer
11A‧‧‧電晶體11A‧‧‧O crystal
11B‧‧‧備用電晶體11B‧‧‧Backup transistor
17A‧‧‧第一電極線17A‧‧‧First electrode line
17B‧‧‧第二電極線17B‧‧‧Second electrode line
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| TW200518474A (en) * | 2003-09-30 | 2005-06-01 | Rohm Co Ltd | D/a converter circuit, organic el drive circuit and organic el display device |
| US20090174649A1 (en) * | 2008-01-08 | 2009-07-09 | Dong-Gyu Kim | Liquid crystal display and control method for charging subpixels thereof |
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| TW200518474A (en) * | 2003-09-30 | 2005-06-01 | Rohm Co Ltd | D/a converter circuit, organic el drive circuit and organic el display device |
| US20090174649A1 (en) * | 2008-01-08 | 2009-07-09 | Dong-Gyu Kim | Liquid crystal display and control method for charging subpixels thereof |
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