TWI481179B - Self-powered uni-directional device appartus - Google Patents

Self-powered uni-directional device appartus Download PDF

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TWI481179B
TWI481179B TW102108206A TW102108206A TWI481179B TW I481179 B TWI481179 B TW I481179B TW 102108206 A TW102108206 A TW 102108206A TW 102108206 A TW102108206 A TW 102108206A TW I481179 B TWI481179 B TW I481179B
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terminal
coupled
transistor
power
diode
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TW201436443A (en
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Tung Jung Liu
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Tung Jung Liu
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Description

自我供電單向導通元件裝置 Self-powered single-conductor component device

本發明有關於自我供電主動式整流器之電路，特別是有關於交流電轉直流電之整流器裝置。 The invention relates to a circuit for a self-powered active rectifier, and more particularly to a rectifier device for alternating current to direct current.

交直流電轉換已成為現代電子產品經常使用的轉換元件之一，用來轉換交流電源成為直流電源以供各式各樣電子設備裝置的電力。 AC/DC conversion has become one of the commonly used conversion components in modern electronic products. It is used to convert AC power into DC power for a wide range of electronic equipment.

常見之交流電之來源有單相及三相，此交流訊號通常是無法提供給複雜控制電路之電源所需，因此需要交直流轉換器將之轉換成所需之特定電壓直流電，而轉換器的第一級電路就是整流器。整流器最常使用的結構是全波整流橋(full bridge rectifier)，其中所需的元件就是雙端單相導通元件。近來節能意識日熾，採用傳統二極體組成之整流器，存在最低順向導通壓降太大的問題，造成大電流通過時，產生耗能及發熱現象，不符節能需求，並且帶來高溫所造成的散熱成本提升及耐用度的疑慮，因此主動式整流器漸成主流。主動式整流器採用主動式功率元件產生極低的順向導通壓降，從而降低轉換耗能與發熱，大幅提升交直流轉 換效率。 Common AC sources are single-phase and three-phase. This AC signal is usually not available to the power supply of complex control circuits. Therefore, an AC-DC converter is required to convert it to the required specific voltage DC, and the converter The primary circuit is the rectifier. The most commonly used structure for a rectifier is a full bridge rectifier where the required components are double-ended, single-phase conduction components. Recently, the energy-saving consciousness is blazing. The rectifier composed of the traditional diode has the problem that the minimum forward voltage drop is too large, causing energy consumption and heat generation when a large current passes, which does not meet the energy saving demand and causes high temperature. Active cooling rectifiers have become mainstream due to increased cooling costs and durability concerns. The active rectifier uses an active power component to produce a very low forward voltage drop, which reduces conversion energy and heat, and greatly improves AC and DC conversion. Change efficiency.

請參照圖1A，圖1A是傳統二極體裝置之電路圖。端點P電壓高於端點N約0.7V以上，產生順向導通電流；反之，N高於P則無電流導通，然0.7V之順向壓降在導通電流大時便會產生耗能，因而發熱損失能量，此為其最大缺點。圖1B是傳統二極體裝置所組成之三相全波整流器之電路圖。PH1、PH2、PH3是三相交流電源，Vbat是整流後之電壓波形，由圖可見Vbat電壓與交流電輸入存在電壓差異，此即為所消耗之能量。因此，為減少耗能提升效率，需改為主動式元件來整流。又為了減低電路複雜度，故採用自我供電單向導通元件來實現此雙端單向導通元件。 Please refer to FIG. 1A. FIG. 1A is a circuit diagram of a conventional diode device. The voltage of the terminal P is higher than the end point N by about 0.7V, and the forward current is generated; otherwise, when N is higher than P, no current is turned on, and the forward voltage drop of 0.7V generates energy when the conduction current is large. Thus heat loses energy, which is its biggest drawback. Figure 1B is a circuit diagram of a three-phase full-wave rectifier composed of a conventional diode device. PH1, PH2, PH3 are three-phase AC power supplies, and Vbat is the voltage waveform after rectification. It can be seen from the figure that there is a voltage difference between the Vbat voltage and the AC input, which is the energy consumed. Therefore, in order to reduce energy consumption and improve efficiency, it is necessary to switch to active components for rectification. In order to reduce the complexity of the circuit, the self-powered single-conducting component is used to implement the double-ended unidirectional conduction component.

傳統的自我供電單向導通元件整流器作法(請參照圖2A)是將單向導通二極體在功率元件逆偏壓時將電荷儲存在電容並直接供應給控制比較器，因此比較器一直處於耗電狀態。為了將此耗電降低，必須將比較器操作電流縮小，結果造成功率元件開關速度變慢的缺點。並且因應比較器一直耗電，儲能電容值勢必也要加大，造成成本增加。 The conventional self-powered single-conductor device rectifier method (please refer to FIG. 2A) is to store the charge in the capacitor and directly supply the control to the control comparator when the power component is reverse biased, so the comparator is always consumed. Electrical state. In order to reduce this power consumption, the comparator operating current must be reduced, resulting in the disadvantage that the power component switching speed is slow. And in response to the comparator has been consuming power, the value of the storage capacitor is bound to increase, resulting in increased costs.

圖2A是現今自我供電單向導通元件裝置之主要元件電路圖。藉由採用功率元件取代二極體以降低順向導通壓降，達成高效率之需求。傳統自我供電單向導通元件裝置2包括功率元件20、二極體21、電容22與比較器24。AC輸入端點P與N分別用以取代傳統二極體整流器的正極(Anode)與負極(Cathode)輸入。BD是功率元件本身內存的寄生二極體(Body Diode)。當端點N電壓高於端點P電壓並 足以導通二極體元件21，電荷便流經元件21並且儲存在電容22，此電荷用以提供比較器24之電源。比較器24的正輸入端電性耦接至P端點，而比較器24的負輸入端則耦接至N端點。比較器24的輸出端則耦接功率元件20的閘極Gate輸入以控制其開啟或關閉。簡單說，端點N電壓高於端點P時，電容器處於充電狀態，此時端點Gate低電壓，功率元件關閉；端點N電壓低於端點P時，電容器處於放電狀態，此時端點Gate高電壓，功率元件開啟，使端點P與端點N之間為低阻抗，達成高效率導通的目的。 Figure 2A is a circuit diagram of the main components of a self-powered single-conductor component device of the present invention. A high efficiency requirement is achieved by replacing the diode with a power component to reduce the forward voltage drop. The conventional self-powered single-conducting element device 2 includes a power element 20, a diode 21, a capacitor 22, and a comparator 24. The AC input terminals P and N are used to replace the Anode and Cathode inputs of the conventional diode rectifier, respectively. BD is a parasitic diode of the power component itself. When the terminal N voltage is higher than the terminal P voltage and Sufficient to turn on the diode element 21, charge flows through the element 21 and is stored in the capacitor 22, which is used to provide power to the comparator 24. The positive input of the comparator 24 is electrically coupled to the P terminal, and the negative input of the comparator 24 is coupled to the N terminal. The output of comparator 24 is coupled to the gate Gate input of power component 20 to control its turn-on or turn-off. To put it simply, when the terminal N voltage is higher than the end point P, the capacitor is in a state of charge. At this time, the terminal Gate is low voltage and the power component is turned off; when the terminal N voltage is lower than the end point P, the capacitor is in a discharged state. Point Gate high voltage, the power component is turned on, so that the low impedance between the end point P and the end point N achieves the purpose of high efficiency conduction.

請參照圖2B，圖2B為端點P到端點N弦波振幅的輸入電壓相位信號(V(P)-V(N))與電容器22所儲存的電壓V(VC)及流經功率元件以外的電流(IC)之波形圖。圖2B左半部的波形代表P-N逆接的相位信號，此時可以看到存在電流消耗(一般約1~10uA)。圖2B右半部的波形代表P-N順接的相位信號，此時可以看到不存在電流消耗(由電容提供電流給比較器)。 Referring to FIG. 2B, FIG. 2B shows the input voltage phase signal (V(P)-V(N)) of the endpoint P to the end N-wave amplitude and the voltage V(VC) stored by the capacitor 22 and flows through the power component. Waveform of current (IC) other than the current. The waveform in the left half of Fig. 2B represents the phase signal of the P-N reversal, and it can be seen that there is current consumption (generally about 1~10uA). The waveform in the right half of Figure 2B represents the phase signal of the P-N splicing, at which point it can be seen that there is no current consumption (current is supplied to the comparator by the capacitor).

請參照圖2C，圖2C為採用圖2A之主動元件2取代圖1B二極體所組成之自我供電主動式整流器。由Vbat的波形可看出與輸入之交流電壓幾乎無電壓差異，因此大幅降低耗能損失。 Please refer to FIG. 2C. FIG. 2C shows a self-powered active rectifier composed of the active device 2 of FIG. 2A instead of the diode of FIG. 1B. It can be seen from the waveform of Vbat that there is almost no voltage difference with the input AC voltage, thus greatly reducing the energy loss.

然而，圖2A之裝置在整流器待機狀態時，端點N電壓高於端點P電壓，比較器24依然處於耗電狀態，造成系統不運作時會有從端點N流經二極體21及比較器24至端點P的漏電電流。此逆電壓耗電在負載為電池時將造成應用上的重大缺點，電池在待機時會一直處於耗電狀態，待機時間會減少。 However, when the device of FIG. 2A is in the rectifier standby state, the terminal N voltage is higher than the terminal P voltage, and the comparator 24 is still in a power consuming state, causing the terminal N to flow through the diode 21 when the system is not operating. The leakage current of comparator 24 to terminal P. This reverse voltage power consumption will cause a major disadvantage in the application when the load is a battery, and the battery will always be in a power-consuming state during standby, and the standby time will be reduced.

本發明實施例提供一種低耗電自我供電單向導通元件裝置，此自我供電單向導通元件裝置包括功率元件、單向導通元件、儲能元件、輸出控制開關單元與控制電路單元。 Embodiments of the present invention provide a low power consumption self-powered single-conducting component device. The self-powered single-conducting component device includes a power component, a unidirectional conduction component, an energy storage component, an output control switch unit, and a control circuit unit.

功率元件，汲極耦接於N端，源極耦接於P端，用以導通或關閉P端與N端之間電位。單向導通單元，耦接於N端與VC端之間，用以於N端電壓高於P端為逆偏壓時，導通使N端電荷傳至VC端。儲能元件，耦接於VC端與P端之間，用以逆偏壓時儲存電荷，以供應控制電路電源。輸出控制開關單元，耦接於VC端與VD端之間，以及耦接N端，用以接收N端電壓並控制VC端電壓輸出至VD端。控制電路單元，耦接於VD端與P端之間，以及耦接N端與Gate端，用以比較P端與N端二端電壓大小，並輸出Gate端控制該功率元件閘極之電路，其中當單向導通單元導通N端至VC端時，輸出控制開關單元不導通VC端至VD端。 The power component has a drain coupled to the N terminal and a source coupled to the P terminal for turning on or off the potential between the P terminal and the N terminal. The unidirectional conduction unit is coupled between the N terminal and the VC terminal for turning on the N terminal charge to the VC terminal when the N terminal voltage is higher than the P terminal. The energy storage component is coupled between the VC end and the P end to store charge during reverse bias to supply control circuit power. The output control switch unit is coupled between the VC end and the VD end, and coupled to the N end for receiving the N terminal voltage and controlling the VC terminal voltage output to the VD end. The control circuit unit is coupled between the VD terminal and the P terminal, and coupled to the N terminal and the Gate terminal, for comparing the voltages of the P terminal and the N terminal, and outputting a Gate terminal to control the circuit of the power component gate. When the one-way conduction unit turns on the N terminal to the VC terminal, the output control switch unit does not conduct the VC terminal to the VD terminal.

綜上所述，本發明所提供的低耗電自我供電單向導通元件裝置採用互補式導通控制，故可以使交流電轉直流電應用之整流單元的漏電流保持在極低的值，並使電瓶的待機時間增加。 In summary, the low-power self-powered single-conducting component device provided by the present invention adopts complementary conduction control, so that the leakage current of the rectifying unit of the alternating current to direct current application can be kept at an extremely low value, and the battery is Standby time increases.

為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，但是此等說明與所附圖示僅係用來說明本發明，而非對本發明的權利範圍作 任何的限制。 The detailed description of the present invention and the accompanying drawings are to be understood as Scope Any restrictions.

1‧‧‧傳統二極體單向導通裝置 1‧‧‧Traditional diode single-directional device

2‧‧‧傳統主動式單向導通元件之電路圖裝置 2‧‧‧Circuit diagram device for traditional active one-way conduction components

3‧‧‧低耗電主動式單向導通元件之電路圖裝置 3‧‧‧Circuit diagram device for low-power active active one-way conduction components

4‧‧‧低耗電主動式單向導通元件之電路圖實施例 4‧‧‧Circuit diagram embodiment of low-power active active one-way-through components

20、30、40‧‧‧功率元件 20, 30, 40‧‧‧ Power components

21、31、41‧‧‧單向導通元件 21, 31, 41‧‧‧ unidirectional components

22、32、42‧‧‧儲能元件 22, 32, 42‧‧‧ energy storage components

24、34、44‧‧‧控制電路單元 24, 34, 44‧‧‧ Control circuit unit

33、43‧‧‧輸出控制開關單元 33, 43‧‧‧ Output control switch unit

P‧‧‧正極(Anode)端 P‧‧‧Anode

N‧‧‧負極(Cathode)端 N‧‧‧Cathode end

Gate‧‧‧功率元件閘極 Gate‧‧‧Power Element Gate

VC‧‧‧儲能元件正電荷端 VC‧‧‧ energy storage component positive charge terminal

VD‧‧‧控制電路單元電源端 VD‧‧‧ control circuit unit power supply end

IC‧‧‧逆向電流(功率元件除外) IC‧‧‧Reverse current (except power components)

BD‧‧‧功率元件之寄生二極體 Parasitic diodes for BD‧‧‧ power components

圖1A是二極體單向導通裝置之電路圖。 Figure 1A is a circuit diagram of a diode unidirectional conduction device.

圖1B為採用二極體所組成之三相交流整流器電路圖及波形圖。 FIG. 1B is a circuit diagram and a waveform diagram of a three-phase AC rectifier composed of a diode.

圖2A為傳統主動式單向導通元件之電路圖。 2A is a circuit diagram of a conventional active one-way conduction element.

圖2B為傳統主動式單向導通元件之操作電壓及電流說明圖。 2B is an explanatory diagram of operating voltage and current of a conventional active one-way conduction element.

圖2C為採用傳統主動式單向導通元件所組成之三相交流整流器電路圖及波形圖。 FIG. 2C is a circuit diagram and a waveform diagram of a three-phase AC rectifier composed of a conventional active one-way conduction component.

圖3A為本發明之低耗電主動式單向導通元件裝置之電路圖。 3A is a circuit diagram of a low power consumption active one-way conduction device of the present invention.

圖3B為低耗電主動式單向導通元件之操作電壓及電流說明圖。 FIG. 3B is an explanatory diagram of operating voltage and current of a low power active active one-way conducting component.

圖4A為本發明實施例之低耗電主動式單向導通元件裝置之電路圖。 4A is a circuit diagram of a low power consumption active single-conducting component device according to an embodiment of the present invention.

圖4B為採用低耗電主動式單向導通元件所組成之三相交流整流器電路圖及波形圖。 FIG. 4B is a circuit diagram and a waveform diagram of a three-phase AC rectifier composed of a low-power active active single-conducting component.

〔低耗電自我供電單向導通元件裝置之實施例〕 [Embodiment of low-power self-powered single-conducting component device]

本發明實施例提供一種低耗電自我供電單向導通元件裝置，此自我供電單向導通元件裝置用以組成主動式整流器，請參照圖3A，裝置3包括功率元件30、單向導通 元件31、儲能元件32、輸出控制開關單元33與控制電路單元34。 The embodiment of the present invention provides a low-power self-powered single-conducting component device. The self-powered single-conducting component device is used to form an active rectifier. Referring to FIG. 3A, the device 3 includes a power component 30 and a single-pass. The element 31, the energy storage element 32, the output control switch unit 33 and the control circuit unit 34.

請參照圖3B，說明端點P與端點N電壓逆偏壓與正偏壓時之電荷導通狀況。當端點N電壓高於端點P電壓(PN逆接)並足以導通單向導通元件31，電荷便流經元件31並且儲存在儲能元件32，此時輸出控制開關單元33不導通。當端點N電壓下降，端點P電壓相對上升(PN順接)，此時儲能元件32的電壓高過端點N電壓，將導通輸出控制開關單元33，將儲能元件32之電荷輸出用以提供控制電路單元34所需之電源。輸出控制開關單元33之控制端耦接至端點N，且元件31與單元33同時只有一個會導通。此設計可使端點N電壓高於端點P之逆偏壓時不會有持續耗電產生。控制電路單元34輸入端耦接至P端點及N端點用以比較其電壓大小，將比較結果輸出耦接功率元件30的閘極Gate輸入以控制其開啟或關閉。 Referring to FIG. 3B, the charge conduction state of the terminal P and the terminal N voltage reverse bias and positive bias voltage will be described. When the terminal N voltage is higher than the terminal P voltage (PN reversed) and is sufficient to turn on the unidirectional conduction element 31, the charge flows through the element 31 and is stored in the energy storage element 32, at which time the output control switching unit 33 is not conducting. When the voltage of the terminal N drops, the voltage of the terminal P rises relatively (PN is compliant), and at this time, the voltage of the energy storage element 32 is higher than the voltage of the terminal N, which will turn on the output control switch unit 33, and output the charge of the energy storage element 32. Used to provide the power required to control the circuit unit 34. The control terminal of the output control switch unit 33 is coupled to the terminal N, and only one of the component 31 and the cell 33 is turned on at the same time. This design allows the end-point N voltage to be higher than the reverse bias of the terminal P without sustained power consumption. The input end of the control circuit unit 34 is coupled to the P end point and the N end point for comparing the voltage levels thereof, and the comparison result output is coupled to the gate Gate input of the power element 30 to control its on or off.

〔自我供電單向導通元件裝置之另一實施例〕 [Another embodiment of the self-powered single-conducting device device]

請參照圖4A，圖4A為本發明實施例之低耗電自我供電單向導通元件裝置之電路圖。裝置4包括功率元件40、二極體41、電容42、PMOS開關43與比較器44。交流電輸入端點P與N分別用以取代傳統二極體整流器的正極(Anode)與負極(Cathode)輸入。BD是功率元件本身內存的寄生二極體(Body Diode)。當端點N電壓高於端點P電壓並足以導通二極體元件41，電荷便流經元件41並且儲存在電容42，當端點N電壓下降，端點P電壓相對上升(PN順接)，此時電容42的電壓高過端點N電壓，將導通PMOS開關 43，將電容42之電荷輸出用以提供比較器44所需之電源。此時比較器44的正輸入端點P電壓高於端點N，因此輸出Gate高電位並導通功率元件40，達成端點P與端點N之間的低導通阻抗，達成極低導通阻抗之單向導通元件。 Please refer to FIG. 4A. FIG. 4A is a circuit diagram of a low power consumption self-powered single-conducting component device according to an embodiment of the present invention. The device 4 includes a power element 40, a diode 41, a capacitor 42, a PMOS switch 43, and a comparator 44. The AC input terminals P and N are used to replace the Anode and Cathode inputs of the conventional diode rectifier, respectively. BD is a parasitic diode of the power component itself. When the terminal N voltage is higher than the terminal P voltage and is sufficient to turn on the diode element 41, the charge flows through the element 41 and is stored in the capacitor 42. When the terminal N voltage drops, the terminal P voltage rises relatively (PN is compliant). At this time, the voltage of the capacitor 42 is higher than the voltage of the terminal N, and the PMOS switch will be turned on. 43. The charge output of capacitor 42 is used to provide the power required by comparator 44. At this time, the positive input terminal P voltage of the comparator 44 is higher than the terminal N, so the output Gate is high and the power element 40 is turned on to achieve a low on-resistance between the terminal P and the terminal N, achieving a very low on-resistance. Single-conductor component.

請參照圖4B，圖4B為採用圖4A之主動元件4取代圖1B二極體所組成之自我供電主動式整流器。由Vbat的波形可看出與輸入之交流電壓幾乎無電壓差異，因此大幅降低耗能損失。 Please refer to FIG. 4B. FIG. 4B is a self-powered active rectifier composed of the active device 4 of FIG. 4A instead of the diode of FIG. 1B. It can be seen from the waveform of Vbat that there is almost no voltage difference with the input AC voltage, thus greatly reducing the energy loss.

本實施例(圖4A)中之單向導通元件41可以使用二極體來實現，但本發明並不因此限定。單向導通元件41亦可以是其他的元件，例如，稽納二極體Zener diode。 The unidirectional conduction element 41 in this embodiment (Fig. 4A) can be implemented using a diode, but the invention is not limited thereto. The unidirectional conduction element 41 can also be other components, such as a Zener diode.

本實施例(圖4A)中之功率元件40可以使用MOSFET金氧半場效電晶體來實現，但本發明並不因此限定。功率元件40亦可以是其他的元件，例如，絕緣柵雙極電晶體IGBT。 The power device 40 in this embodiment (Fig. 4A) can be implemented using a MOSFET MOS field effect transistor, but the invention is not so limited. Power component 40 can also be other components, such as an insulated gate bipolar transistor IGBT.

以上所述僅為本發明之實施例，其並非用以侷限本發明之專利範圍。 The above description is only an embodiment of the present invention, and is not intended to limit the scope of the invention.

3‧‧‧自我供電單向導通元件裝置 3‧‧‧ Self-powered single-conducting component device

30‧‧‧功率元件 30‧‧‧Power components

31‧‧‧單向導通元件 31‧‧‧One-way communication components

32‧‧‧儲能元件 32‧‧‧ Energy storage components

33‧‧‧儲能輸出控制開關單元 33‧‧‧ Energy storage output control switch unit

34‧‧‧控制電路單元 34‧‧‧Control circuit unit

Claims (8)

一種自我供電單向導通元件裝置，用以將交流電轉換為直流電整流器之主要元件，包括：一功率元件，汲極耦接於N端，源極耦接於P端，用以導通或關閉P端與N端之間電位；一單向導通元件，耦接於N端與VC端之間，用以於N端電壓高於P端為逆偏壓時，導通使N端電荷傳至VC端；一儲能元件，耦接於VC端與P端之間，用以逆偏壓時儲存電荷，以供應控制電路電源；一輸出控制開關單元，耦接於VC端與VD端之間，以及耦接N端，用以接收N端電壓並控制VC端電壓輸出至VD端；以及一控制電路單元，耦接於VD端與P端之間，以及耦接N端與功率元件閘極端，用以比較P端與N端二端電壓大小，並控制該功率元件是否導通P端與N端之電路；其中當該單向導通單元導通N端至VC端時，該輸出控制開關單元不導通VC端至VD端。 A self-powered single-conducting component device for converting alternating current into a main component of a direct current rectifier includes: a power component, a drain coupled to the N terminal, and a source coupled to the P terminal for turning the P terminal on or off a potential between the N terminal and the N terminal; coupled between the N terminal and the VC terminal, when the N terminal voltage is higher than the P terminal is reverse biased, the N terminal charge is transmitted to the VC terminal; An energy storage component is coupled between the VC end and the P end to store a charge during reverse bias to supply a control circuit power supply; an output control switch unit coupled between the VC end and the VD end, and coupled Connected to the N terminal for receiving the N terminal voltage and controlling the VC terminal voltage output to the VD terminal; and a control circuit unit coupled between the VD terminal and the P terminal, and coupled to the N terminal and the power component gate terminal for Comparing the voltages of the P terminal and the N terminal, and controlling whether the power component turns on the P terminal and the N terminal circuit; wherein when the unidirectional conduction cell turns on the N terminal to the VC terminal, the output control switch unit does not conduct the VC terminal To the VD end. 如申請專利範圍第1項所述之自我供電單向導通元件裝置，其中當該N端電壓低於VC端時，該輸出控制開關單元導通VC端至VD端。 The self-powered single-conducting device device of claim 1, wherein the output control switch unit turns on the VC terminal to the VD terminal when the N-terminal voltage is lower than the VC terminal. 如申請專利範圍第1項所述之自我供電單向導通元件裝置，該控制電路單元更包括：一比較器，電性耦接於N端與P端，用以比較其電壓大小，並控制該功率元件之開啟或關閉，其中該比較器的負 輸入端耦接N端，該比較器的正輸入端耦接P端，該比較器的輸出端耦接該功率元件閘極。 The control circuit unit further includes: a comparator electrically coupled to the N terminal and the P terminal for comparing the voltage magnitude and controlling the device, as described in claim 1 Turning the power component on or off, where the comparator is negative The input end is coupled to the N terminal, the positive input end of the comparator is coupled to the P end, and the output end of the comparator is coupled to the power element gate. 如申請專利範圍第1項所述之自我供電單向導通元件裝置，其中該功率元件為第一電晶體，且該第一電晶體具有一寄生二極體，該寄生二極體的陰極端耦接於N端，該寄生二極體的陽極端耦接於P端，其中該第一電晶體為金氧半場效電晶體或絕緣柵雙極電晶體。 The self-powered single-conducting device device of claim 1, wherein the power device is a first transistor, and the first transistor has a parasitic diode, and the cathode end of the parasitic diode is coupled Connected to the N terminal, the anode end of the parasitic diode is coupled to the P terminal, wherein the first transistor is a gold oxide half field effect transistor or an insulated gate bipolar transistor. 如申請專利範圍第1項所述之自我供電單向導通元件裝置，其中該儲能元件為電容，其中該單向導通元件為二極體，該二極體的陽極端耦接於N端，該二極體的陰極端耦接於該輸出控制開關單元及該儲能元件。 The device of claim 1 , wherein the energy storage component is a capacitor, wherein the unidirectional conduction component is a diode, and an anode end of the diode is coupled to the N terminal. The cathode end of the diode is coupled to the output control switch unit and the energy storage component. 如申請專利範圍第5項所述之自我供電單向導通元件裝置，其中該二極體為稽納二極體。 The device of claim 5, wherein the diode is an arrester diode. 如申請專利範圍第5項所述之自我供電單向導通元件裝置，其中該輸出控制開關單元為第二電晶體，該第二電晶體的一第一端耦接於N端，該第二電晶體的一第二端耦接於該二極體的陰極端，該第二電晶體的一第三端耦接於該控制電路單元的電源輸入端。 The device of claim 5, wherein the output control switch unit is a second transistor, and a first end of the second transistor is coupled to the N terminal, the second A second end of the crystal is coupled to the cathode end of the diode, and a third end of the second transistor is coupled to the power input end of the control circuit unit. 如申請專利範圍第7項所述之自我供電單向導通元件裝置，其中該第二電晶體為P通道電晶體，該第二電晶體的該第一端為閘極端，該第二電晶體的該第二端為源極端，該第二電晶體的該第三端為汲極端。 The self-powered single-conducting device device of claim 7, wherein the second transistor is a P-channel transistor, the first end of the second transistor is a gate terminal, and the second transistor is The second end is a source terminal, and the third end of the second transistor is a 汲 terminal.
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CN1289476A (en) * 1998-12-02 2001-03-28 精工爱普生株式会社 Power supply device, power supply method, portable electronic apparatus, and electronic timepiece
TW200640125A (en) * 2005-05-13 2006-11-16 Winbond Electronics Corp Differential amplifier and low drop-out regulator with thereof

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Publication number Priority date Publication date Assignee Title
CN1289476A (en) * 1998-12-02 2001-03-28 精工爱普生株式会社 Power supply device, power supply method, portable electronic apparatus, and electronic timepiece
TW200640125A (en) * 2005-05-13 2006-11-16 Winbond Electronics Corp Differential amplifier and low drop-out regulator with thereof

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