TWI477621B - Housing and method for making the same - Google Patents
Housing and method for making the same Download PDFInfo
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本發明涉及一種殼體及其製造方法，特別涉及一種鋁或鋁合金的殼體及其製造方法。The present invention relates to a housing and a method of manufacturing the same, and more particularly to a housing of aluminum or aluminum alloy and a method of manufacturing the same.
鋁或鋁合金目前被廣泛應用於航空、航天、汽車及微電子等工業領域。但鋁或鋁合金的標準電極電位很低，耐腐蝕差，暴露於自然環境中會引起表面快速腐蝕。Aluminum or aluminum alloys are currently widely used in the aerospace, aerospace, automotive and microelectronics industries. However, the standard electrode potential of aluminum or aluminum alloy is very low, and the corrosion resistance is poor, and exposure to the natural environment causes rapid surface corrosion.
提高鋁或鋁合金防腐蝕性的方法通常係在其表面形成保護性的塗層。傳統的陽極氧化、電沉積、化學轉化膜技術及電鍍等鋁或鋁合金的表面處理方法存在生產工藝複雜、效率低、環境污染嚴重等缺點。Methods for improving the corrosion resistance of aluminum or aluminum alloys generally result in a protective coating on the surface. Conventional anodizing, electrodeposition, chemical conversion film technology, and surface treatment methods for aluminum or aluminum alloys such as electroplating have disadvantages such as complicated production process, low efficiency, and serious environmental pollution.
真空鍍膜（PVD）為一清潔的成膜技術。然而，由於鋁或鋁合金的標準電極電位很低，且PVD塗層本身不可避免的會存在微小的孔隙，因此形成於鋁或鋁合金表面的PVD塗層容易發生電化學腐蝕，導致該PVD塗層的防腐蝕性能降低，對鋁或鋁合金的防腐蝕能力的提高有限。Vacuum coating (PVD) is a clean film forming technique. However, since the standard electrode potential of aluminum or aluminum alloy is very low, and the PVD coating itself inevitably has minute pores, the PVD coating formed on the surface of the aluminum or aluminum alloy is prone to electrochemical corrosion, resulting in the PVD coating. The corrosion resistance of the layer is lowered, and the improvement of the corrosion resistance of the aluminum or aluminum alloy is limited.
鑒於此，提供一種具有較好的耐腐蝕性的鋁或鋁合金的殼體。In view of this, a housing of aluminum or aluminum alloy having better corrosion resistance is provided.
另外，還提供一種上述殼體的製造方法。In addition, a method of manufacturing the above casing is also provided.
一種殼體，包括鋁或鋁合金基體，該殼體還包括依次形成於該鋁或鋁合金基體上的鋁膜和防腐蝕膜，該防腐蝕膜為氧化鋁梯度膜，其摻雜釓金屬離子，所述氧化鋁梯度膜中氧的原子百分含量由靠近鋁或鋁合金基體至遠離鋁或鋁合金基體的方向呈梯度增加，所述釓金屬離子的摻雜方式為離子注入。A casing comprising an aluminum or aluminum alloy substrate, the casing further comprising an aluminum film and an anti-corrosion film sequentially formed on the aluminum or aluminum alloy substrate, the anti-corrosion film being an alumina gradient film doped with a ruthenium metal ion The atomic percentage of oxygen in the alumina gradient film is gradually increased from a direction close to the aluminum or aluminum alloy matrix to a direction away from the aluminum or aluminum alloy matrix, and the doping metal ion is doped by ion implantation.
一種殼體的製造方法，其包括如下步驟：A method of manufacturing a housing, comprising the steps of:
提供鋁或鋁合金基體；Providing an aluminum or aluminum alloy substrate;
於該鋁或鋁合金基體的表面磁控濺射鋁膜；Magnetron sputtering an aluminum film on the surface of the aluminum or aluminum alloy substrate;
於鋁膜上磁控濺射氧化鋁梯度膜，該氧化鋁梯度膜中氧的原子百分含量由靠近鋁或鋁合金基體至遠離鋁或鋁合金基體的方向呈梯度增加；Magnetron sputtering an alumina gradient film on an aluminum film, the atomic percentage of oxygen in the gradient film of the aluminum oxide is increased from a direction close to the aluminum or aluminum alloy matrix to a direction away from the aluminum or aluminum alloy matrix;
於氧化鋁梯度膜離子注入釓金屬離子，形成防腐蝕膜。The ruthenium metal ions are ion-implanted into the alumina gradient film to form an anti-corrosion film.
本發明所述殼體的製造方法，在鋁或鋁合金基體上依次形成的鋁膜和防腐蝕膜，該防腐蝕膜為藉由離子注入摻雜釓(Gd)金屬離子的氧化鋁梯度膜該，鋁膜和防腐蝕膜的複合膜層可顯著提高所述殼體的耐腐蝕性，且該殼體的製造工藝簡單、幾乎無環境污染。In the method for manufacturing a casing according to the present invention, an aluminum film and an anti-corrosion film are sequentially formed on an aluminum or aluminum alloy substrate, and the anti-corrosion film is an alumina gradient film doped with yttrium (Gd) metal ions by ion implantation. The composite film layer of the aluminum film and the anti-corrosion film can significantly improve the corrosion resistance of the casing, and the manufacturing process of the casing is simple and almost no environmental pollution.
請參閱圖1，本發明一較佳實施例的殼體10包括鋁或鋁合金基體11、依次形成於該鋁或鋁合金基體11表面的鋁膜13、防腐蝕膜15，該防腐蝕膜15為氧化鋁梯度膜，該氧化鋁梯度膜摻雜有釓金屬離子，所述釓金屬離子的摻雜方式為離子注入。Referring to FIG. 1 , a housing 10 according to a preferred embodiment of the present invention includes an aluminum or aluminum alloy substrate 11 , an aluminum film 13 sequentially formed on the surface of the aluminum or aluminum alloy substrate 11 , and an anti-corrosion film 15 . The aluminum oxide gradient film is doped with cerium metal ions, and the cerium metal ions are doped by ion implantation.
所述防腐蝕膜15的厚度為0.5~2.0μm。所述防腐蝕膜15藉由磁控濺射鍍膜法形成。The anti-corrosion film 15 has a thickness of 0.5 to 2.0 μm. The anticorrosive film 15 is formed by a magnetron sputtering coating method.
所述鋁膜13的形成用以增強所述防腐蝕膜15與鋁或鋁合金基體11之間的結合力。所述鋁膜13的厚度為100~300nm。The aluminum film 13 is formed to enhance the bonding force between the anti-corrosion film 15 and the aluminum or aluminum alloy substrate 11. The aluminum film 13 has a thickness of 100 to 300 nm.
所述殼體10的製造方法主要包括如下步驟：The manufacturing method of the housing 10 mainly includes the following steps:
提供鋁或鋁合金基體11，該鋁或鋁合金基體11可以藉由沖壓成型得到，其具有待製得的殼體10的結構。An aluminum or aluminum alloy substrate 11 is provided which can be obtained by press forming having the structure of the casing 10 to be produced.
將所述鋁或鋁合金基體11放入盛裝有乙醇或丙酮溶液的超聲波清洗器中進行震動清洗，以除去鋁或鋁合金基體11表面的雜質和油污。清洗完畢後烘乾備用。The aluminum or aluminum alloy substrate 11 is placed in an ultrasonic cleaner containing an ethanol or acetone solution for vibration cleaning to remove impurities and oil stains on the surface of the aluminum or aluminum alloy substrate 11. After cleaning, dry and set aside.
對經上述處理後的鋁或鋁合金基體11的表面進行氬氣電漿清洗，進一步去除鋁或鋁合金基體11表面的油污，以改善鋁或鋁合金基體11表面與後續塗層的結合力。The surface of the aluminum or aluminum alloy substrate 11 subjected to the above treatment is subjected to argon plasma cleaning to further remove the oil stain on the surface of the aluminum or aluminum alloy substrate 11 to improve the adhesion of the surface of the aluminum or aluminum alloy substrate 11 to the subsequent coating.
提供一鍍膜機100，該真空鍍膜機100包括一鍍膜室20及連接於鍍膜室20的一真空泵30，真空泵30用以對鍍膜室20抽真空。該鍍膜室20內設有轉架(未圖示)、相對設置的二鋁靶22，轉架帶動鋁或鋁合金基體11沿圓形的軌跡21公轉，且鋁或鋁合金基體11在沿軌跡21公轉時亦自轉。A coating machine 100 is provided. The vacuum coating machine 100 includes a coating chamber 20 and a vacuum pump 30 connected to the coating chamber 20. The vacuum pump 30 is used to evacuate the coating chamber 20. The coating chamber 20 is provided with a turret (not shown) and a relatively disposed two-aluminum target 22, and the turret drives the aluminum or aluminum alloy base 11 to revolve along a circular trajectory 21, and the aluminum or aluminum alloy substrate 11 is along the trajectory. It also rotates when it is 21 revolutions.
該電漿清洗的具體操作及工藝參數可為：對該鍍膜室20進行抽真空處理至本底真空度為8.0×10-3 Pa，以300~500sccm（標準狀態毫升/分鐘）的流量向鍍膜室20內通入純度為99.999%的氬氣（工作氣體），於鋁或鋁合金基體11上施加-300~-800V的偏壓，在所述鍍膜室20中形成高頻電壓，使所述氬氣產生氬氣電漿對鋁或鋁合金基體11的表面進行物理轟擊，而達到對鋁或鋁合金基體11表面清洗的目的。所述氬氣電漿清洗的時間為3~10min。The specific operation and process parameters of the plasma cleaning may be: vacuuming the coating chamber 20 to a background vacuum of 8.0×10 −3 Pa, and applying a flow rate of 300 to 500 sccm (standard state ML/min). An argon gas (working gas) having a purity of 99.999% is introduced into the chamber 20, and a bias voltage of -300 to -800 V is applied to the aluminum or aluminum alloy substrate 11, and a high-frequency voltage is formed in the coating chamber 20, so that The argon gas produces an argon plasma to physically bombard the surface of the aluminum or aluminum alloy substrate 11 to achieve the purpose of cleaning the surface of the aluminum or aluminum alloy substrate 11. The argon plasma cleaning time is 3 to 10 minutes.
採用磁控濺射的方式在鋁或鋁合金基體11表面依次形成鋁膜13及防腐蝕膜15。形成該鋁膜13工藝參數為：在所述電漿清洗完成後，通入高純氬氣（99.999％）100~300sccm，開啟鋁靶22，設置鋁靶22功率為2~8kw，調節鋁或鋁合金基體11的偏壓為-300~-500V，在鋁或鋁合金基體11表面沉積鋁膜13，沉積5~10分鐘。An aluminum film 13 and an anti-corrosion film 15 are sequentially formed on the surface of the aluminum or aluminum alloy substrate 11 by magnetron sputtering. The process parameter for forming the aluminum film 13 is: after the plasma cleaning is completed, high-purity argon gas (99.999%) is passed through 100~300sccm, the aluminum target 22 is turned on, and the power of the aluminum target 22 is set to 2~8kw, and the aluminum or aluminum is adjusted. The aluminum alloy substrate 11 has a bias voltage of -300 to -500 V, and an aluminum film 13 is deposited on the surface of the aluminum or aluminum alloy substrate 11 for 5 to 10 minutes.
製備防腐蝕膜15，該防腐蝕膜15為摻雜釓(Gd)金屬離子的氧化鋁梯度膜，所述釓金屬離子的摻雜方式為離子注入。An anti-corrosion film 15 is prepared. The anti-corrosion film 15 is an aluminum oxide gradient film doped with yttrium (Gd) metal ions, and the doping metal ion is doped by ion implantation.
氧化鋁梯度膜的製備工藝：以氬氣為工作氣體，向所述鍍膜室中通入初始流量為10~20sccm的反應氣體氧氣，於鋁或鋁合金基體11上施加-150~-500V的偏壓，在沉積該氧化鋁梯度膜的過程中，每沉積10~15min將氧氣的流量增大10~20sccm，使O原子在防腐蝕膜15中的原子百分含量由靠近鋁或鋁合金基體11至遠離鋁或鋁合金基體11的方向呈梯度增加。沉積時間為30~90min。The preparation process of the alumina gradient film: using argon gas as the working gas, introducing a reaction gas oxygen having an initial flow rate of 10-20 sccm into the coating chamber, and applying a bias of -150 to -500 V on the aluminum or aluminum alloy substrate 11. In the process of depositing the alumina gradient film, the flow rate of oxygen is increased by 10-20 sccm every 10-15 min, so that the atomic percentage of O atom in the anti-corrosion film 15 is close to the aluminum or aluminum alloy substrate 11 The direction increases away from the direction of the aluminum or aluminum alloy substrate 11. The deposition time is 30~90min.
所述氧化鋁梯度膜在其形成過程中可形成Al-O相，增強所述氧化鋁梯度膜的緻密性，以提高所述殼體10的耐腐蝕性。The alumina gradient film may form an Al-O phase during its formation, enhancing the density of the alumina gradient film to improve the corrosion resistance of the casing 10.
所述氧化鋁梯度膜中O的原子百分含量由靠近鋁或鋁合金基體11至遠離鋁或鋁合金基體11的方向呈梯度增加，可降低防腐蝕膜15與鋁膜13之間晶格不匹配的程度，有利於將濺射氧化鋁梯度膜的過程中產生的殘餘應力向鋁或鋁合金基體11方向傳遞；又因為在氧化鋁梯度膜和鋁或鋁合金基體11之間沉積了塑性較好的鋁膜13，可改善氧化鋁梯度膜與鋁或鋁合金基體11之間的介面錯配度，当氧化鋁梯度膜中的殘餘應力較大時，可以借助於該鋁膜13以及鋁或鋁合金基體11的局部塑性變形實現殘餘應力的釋放，從而減少氧化鋁梯度膜內的殘餘應力，使殼體10不易發生應力腐蝕，以提高所述殼體10的耐腐蝕性。所述應力腐蝕是指在殘餘或/和外加應力及腐蝕介質的作用下，引起的金屬失效現象。The atomic percentage of O in the alumina gradient film is increased in a gradient from the aluminum or aluminum alloy substrate 11 to the direction away from the aluminum or aluminum alloy substrate 11, which can reduce the lattice between the anti-corrosion film 15 and the aluminum film 13. The degree of matching facilitates the transfer of residual stress generated during the sputtering of the alumina gradient film toward the aluminum or aluminum alloy substrate 11; and because of the plasticity deposited between the alumina gradient film and the aluminum or aluminum alloy substrate 11 The good aluminum film 13 can improve the interface mismatch between the alumina gradient film and the aluminum or aluminum alloy substrate 11. When the residual stress in the alumina gradient film is large, the aluminum film 13 and aluminum or The local plastic deformation of the aluminum alloy base 11 realizes the release of residual stress, thereby reducing the residual stress in the alumina gradient film, making the casing 10 less susceptible to stress corrosion, thereby improving the corrosion resistance of the casing 10. The stress corrosion refers to a metal failure phenomenon caused by residual or/and external stress and corrosive medium.
完成氧化鋁梯度膜的沉積後，於該防氧化鋁梯度膜表面注入釓金屬離子。所述的注入釓金屬離子的過程是：將鍍覆有所述鋁膜13及氧化鋁梯度膜的鋁或鋁合金基體11置於強流金屬離子注入機(MEVVA)（未圖示）中，該離子注入機中採用釓金屬靶材，該離子注入機首先將釓金屬進行電離，使其產生釓金屬離子蒸氣，並經高壓電場加速使該釓金屬離子蒸氣形成具有幾萬甚至幾百萬電子伏特能量的釓金屬離子束，射入氧化鋁梯度膜的表面，與氧化鋁梯度膜表層中及其表面的原子或分子發生的物理反應，使該氧化鋁梯度膜中注入有釓金屬離子，形成所述防腐蝕層15。After the deposition of the alumina gradient film is completed, the base metal ions are implanted on the surface of the alumina-resistant gradient film. The process of implanting the base metal ions is: placing the aluminum or aluminum alloy substrate 11 plated with the aluminum film 13 and the aluminum oxide gradient film in a high-current metal ion implanter (MEVVA) (not shown). The ion implanter uses a base metal target, which first ionizes the base metal to generate a base metal ion vapor, and accelerates the high pressure electric field to form the base metal ion vapor with tens of thousands or even millions of electrons. The strontium metal ion beam of volt energy is injected into the surface of the alumina gradient film, and physically reacts with atoms or molecules in the surface of the alumina gradient film and the surface thereof, so that the aluminum oxide gradient film is implanted with bismuth metal ions to form The anti-corrosion layer 15.
注入釓金屬離子的參數為：離子注入機的真空度為1×10-4 Pa，離子源電壓為30~100kV，離子束流強度為0.1~5mA，控制釓金屬離子注入劑量在1×1016 ions/cm2 到1×1018 ions/cm2 之間。The parameters for injecting bismuth metal ions are: the vacuum degree of the ion implanter is 1×10 -4 Pa, the ion source voltage is 30~100kV, the ion beam current intensity is 0.1~5mA, and the control cesium metal ion implantation dose is 1×10 16 Ion/cm 2 to 1 × 10 18 ions/cm 2 .
所述釓（Gd）金屬離子與所述氧化鋁梯度膜中的原子為冶金結合，因此，該注入的釓金屬離子不易脫落，且由於是在高能離子注入的條件下形成，該釓（Gd）金屬注入氧化鋁梯度膜中後形成為非晶態層，由於非晶態結構具有各向同性、表面無晶界、無位錯、偏析，均相體系等特點，故，經離子注入釓（Gd）金屬離子後的氧化鋁梯度膜使殼體10在腐蝕性介質中不易形成腐蝕微電池，發生電化學腐蝕的可能性小，大大提高了殼體10的耐蝕性。The ruthenium (Gd) metal ions are metallurgically bonded to atoms in the alumina gradient film, and therefore, the implanted ruthenium metal ions are not easily detached, and since they are formed under high energy ion implantation conditions, the ruthenium (Gd) is formed. After the metal is implanted into the alumina gradient film, it is formed into an amorphous layer. Since the amorphous structure has the characteristics of isotropy, no grain boundary at the surface, no dislocation, segregation, homogeneous system, etc., ion implantation (Gd) The alumina gradient film after the metal ions makes the casing 10 less likely to form a corrosive microbattery in the corrosive medium, and the possibility of electrochemical corrosion is small, and the corrosion resistance of the casing 10 is greatly improved.
以下結合具體實施例對殼體10的製備方法及殼體10進行說明：The method for preparing the housing 10 and the housing 10 will be described below in conjunction with specific embodiments:
實施例1Example 1
電漿清洗：氬氣流量為280sccm，鋁或鋁合金基體11的偏壓為-300V，電漿清洗的時間為9分鐘；Plasma cleaning: argon gas flow rate is 280sccm, aluminum or aluminum alloy substrate 11 has a bias voltage of -300V, and plasma cleaning time is 9 minutes;
濺鍍鋁膜13：以鋁靶22為靶材，通入氬氣100sccm，設置鋁靶22功率為2kw，設置鋁或鋁合金基體11的偏壓為-500V，沉積5分鐘；Sputtering aluminum film 13: using aluminum target 22 as a target, argon gas is introduced into 100 sccm, the power of the aluminum target 22 is set to 2 kw, and the bias of the aluminum or aluminum alloy substrate 11 is set to -500 V, and deposition is performed for 5 minutes;
製備防腐蝕層15：濺鍍氧化鋁梯度膜，以氬氣為工作氣體，其流量為100sccm，以氧氣為反應氣體，設置氧氣的初始流量分別為10sccm，在鋁或鋁合金基體11上施加-500V的偏壓；每沉積10min將氧氣的流量增大10sccm，沉積時間控制為30min；The anti-corrosion layer 15 is prepared: a sputtering alumina gradient film, argon gas as a working gas, a flow rate of 100 sccm, oxygen as a reaction gas, and an initial flow rate of oxygen of 10 sccm, respectively, is applied on the aluminum or aluminum alloy substrate 11 - 500V bias; the flow rate of oxygen is increased by 10sccm every 10min, and the deposition time is controlled to 30min;
於氧化鋁梯度膜注入釓金屬離子：設置真空度為1×10-4 Pa，離子源電壓為30kV，離子束流強度為0.1mA，控制釓金屬離子注入劑量為1×1016 ions/cm2 。Injecting ruthenium metal ions into the alumina gradient film: setting the vacuum degree to 1×10 -4 Pa, the ion source voltage to 30 kV, the ion beam current intensity to 0.1 mA, and controlling the ruthenium metal ion implantation dose to be 1×10 16 ions/cm 2 .
實施例2Example 2
電漿清洗：氬氣流量為230sccm，金屬鋁或鋁合金基體11的偏壓為-480V，電漿清洗的時間為7分鐘；Plasma cleaning: argon gas flow rate is 230sccm, metal aluminum or aluminum alloy substrate 11 has a bias voltage of -480V, and plasma cleaning time is 7 minutes;
濺鍍鋁膜13：以鋁靶22為靶材，通入氬氣200sccm，設置鋁靶22功率為5kw，設置鋁或鋁合金基體11的偏壓為-400V，沉積7分鐘；Sputtering aluminum film 13: using aluminum target 22 as a target, argon gas 200sccm, aluminum target 22 power is set to 5kw, aluminum or aluminum alloy substrate 11 is set to -400V, deposition for 7 minutes;
製備防腐蝕層15：濺鍍氧化鋁梯度膜，以氬氣為工作氣體，其流量為200sccm，以氧氣為反應氣體，設置氧氣的初始流量分別為15sccm，在鋁或鋁合金基體11上施加-300V的偏壓；每沉積12min將氧氣的流量增大15sccm，沉積時間控制為60min；The anti-corrosion layer 15 is prepared: a sputtering alumina gradient film, argon gas as a working gas, a flow rate of 200 sccm, oxygen as a reaction gas, and an initial flow rate of oxygen of 15 sccm, respectively, is applied on the aluminum or aluminum alloy substrate 11 - 300V bias; the flow rate of oxygen is increased by 15sccm every 12min, and the deposition time is controlled to 60min;
於氧化鋁梯度膜注入釓金屬離子：設置真空度為1×10-4 Pa，離子源電壓為60kV，離子束流強度為2mA，控制釓金屬離子注入劑量在1×1017 ions/cm2 。The ruthenium metal ions were implanted into the alumina gradient film: the degree of vacuum was set to 1 × 10 -4 Pa, the ion source voltage was 60 kV, the ion beam current intensity was 2 mA, and the ruthenium metal ion implantation dose was controlled at 1 × 10 17 ions/cm 2 .
實施例3Example 3
電漿清洗：氬氣流量為160sccm，鋁或鋁合金基體11的偏壓為-400V，電漿清洗的時間為6分鐘；Plasma cleaning: argon gas flow rate is 160sccm, aluminum or aluminum alloy substrate 11 has a bias voltage of -400V, and plasma cleaning time is 6 minutes;
濺鍍鋁膜13：以鋁靶22為靶材，通入氬氣300sccm，設置鋁靶22功率為8kw，設置鋁或鋁合金基體11的偏壓為-300V，沉積10分鐘；Sputtered aluminum film 13: with aluminum target 22 as a target, argon gas 300sccm, set aluminum target 22 power is 8kw, set aluminum or aluminum alloy substrate 11 bias is -300V, deposition 10 minutes;
製備防腐蝕層15：濺鍍氧化鋁梯度膜，以氬氣為工作氣體，其流量為300sccm，以氧氣為反應氣體，設置氧氣的初始流量分別為20sccm，在鋁或鋁合金基體11上施加-150V的偏壓；每沉積15min將氧氣的流量增大20sccm，沉積時間控制為90min；The anti-corrosion layer 15 is prepared: a sputtering alumina gradient film, argon gas as a working gas, a flow rate of 300 sccm, oxygen as a reaction gas, and an initial flow rate of oxygen of 20 sccm, respectively, is applied on the aluminum or aluminum alloy substrate 11 - 150V bias; the flow rate of oxygen is increased by 20sccm every 15min, and the deposition time is controlled to 90min;
於氧化鋁梯度膜注入釓金屬離子的工藝參數為：設置真空度為1×10-4 Pa，離子源電壓為100kV，離子束流強度為5mA，控制釓金屬離子注入劑量1×1018 ions/cm2 。The process parameters for injecting ruthenium metal ions into the alumina gradient film are: setting the vacuum degree to 1×10 -4 Pa, the ion source voltage to 100 kV, the ion beam current intensity to 5 mA, and controlling the bismuth metal ion implantation dose to 1×10 18 ions/ Cm 2 .
本發明較佳實施方式的殼體10的製造方法，在鋁或鋁合金基體11上依次形成鋁膜13及防腐蝕膜15，該防腐蝕膜15為氧化鋁梯度膜，其離子注入有釓(Gd)金屬離子。該鋁膜13、防腐蝕膜15組成的複合膜層顯著地提高了所述殼體10的耐腐蝕性，且該製造工藝簡單、幾乎無環境污染。In the manufacturing method of the casing 10 according to the preferred embodiment of the present invention, an aluminum film 13 and an anti-corrosion film 15 are sequentially formed on the aluminum or aluminum alloy substrate 11, and the anti-corrosion film 15 is an alumina gradient film, and the ion implantation is performed by ruthenium ( Gd) metal ions. The composite film layer composed of the aluminum film 13 and the anti-corrosion film 15 remarkably improves the corrosion resistance of the casing 10, and the manufacturing process is simple and almost free from environmental pollution.
10．．．殼體10. . . case
11．．．鋁或鋁合金基體11. . . Aluminum or aluminum alloy substrate
13．．．鋁膜13. . . Aluminum film
15．．．防腐蝕膜15. . . Anti-corrosion film
100．．．鍍膜機100. . . Coating machine
20．．．鍍膜室20. . . Coating chamber
21．．．軌跡twenty one. . . Trajectory
22．．．鋁靶twenty two. . . Aluminum target
30．．．真空泵30. . . Vacuum pump
圖1係本發明較佳實施方式殼體的剖視示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a housing of a preferred embodiment of the present invention.
圖2係圖1殼體的製作過程中所用鍍膜機俯視示意圖。2 is a top plan view of the coating machine used in the manufacturing process of the housing of FIG. 1.
10．．．殼體10. . . case
11．．．鋁或鋁合金基體11. . . Aluminum or aluminum alloy substrate
13．．．鋁膜13. . . Aluminum film
15．．．防腐蝕膜15. . . Anti-corrosion film
Claims (8)
提供鋁或鋁合金基體；
於該鋁或鋁合金基體的表面磁控濺射鋁膜；
於鋁膜上磁控濺射氧化鋁梯度膜，該氧化鋁梯度膜中氧的原子百分含量由靠近鋁或鋁合金基體至遠離鋁或鋁合金基體的方向呈梯度增加；
於氧化鋁梯度膜離子注入釓金屬離子，形成防腐蝕膜。A method of manufacturing a housing, comprising the steps of:
Providing an aluminum or aluminum alloy substrate;
Magnetron sputtering an aluminum film on the surface of the aluminum or aluminum alloy substrate;
Magnetron sputtering an alumina gradient film on an aluminum film, the atomic percentage of oxygen in the gradient film of the aluminum oxide is increased from a direction close to the aluminum or aluminum alloy matrix to a direction away from the aluminum or aluminum alloy matrix;
The ruthenium metal ions are ion-implanted into the alumina gradient film to form an anti-corrosion film.
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| TW100103215A TWI477621B (en) | 2011-01-28 | 2011-01-28 | Housing and method for making the same |
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| TW100103215A TWI477621B (en) | 2011-01-28 | 2011-01-28 | Housing and method for making the same |
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| TWI477621B true TWI477621B (en) | 2015-03-21 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159618A (en) * | 1997-06-10 | 2000-12-12 | Commissariat A L'energie Atomique | Multi-layer material with an anti-erosion, anti-abrasion, and anti-wear coating on a substrate made of aluminum, magnesium or their alloys |
| US20060093833A1 (en) * | 2002-03-05 | 2006-05-04 | Dirk Meyer | Components having crystalline coatings of the aluminum oxide/silicon oxide system and method for the production thereof |
| US20080110760A1 (en) * | 2002-01-08 | 2008-05-15 | Applied Materials, Inc. | Process chamber component having yttrium-aluminum coating |
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2011
- 2011-01-28 TW TW100103215A patent/TWI477621B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159618A (en) * | 1997-06-10 | 2000-12-12 | Commissariat A L'energie Atomique | Multi-layer material with an anti-erosion, anti-abrasion, and anti-wear coating on a substrate made of aluminum, magnesium or their alloys |
| US20080110760A1 (en) * | 2002-01-08 | 2008-05-15 | Applied Materials, Inc. | Process chamber component having yttrium-aluminum coating |
| US20060093833A1 (en) * | 2002-03-05 | 2006-05-04 | Dirk Meyer | Components having crystalline coatings of the aluminum oxide/silicon oxide system and method for the production thereof |
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