TWI477439B - Method of transferring nanowire - Google Patents
Method of transferring nanowire Download PDFInfo
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- TWI477439B TWI477439B TW099121340A TW99121340A TWI477439B TW I477439 B TWI477439 B TW I477439B TW 099121340 A TW099121340 A TW 099121340A TW 99121340 A TW99121340 A TW 99121340A TW I477439 B TWI477439 B TW I477439B
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Description
本發明涉及奈米線,尤其涉及奈米線之獲取及集成。 The invention relates to nanowires, in particular to the acquisition and integration of nanowires.
在高度集成化浪潮的推動下,現代技術對奈米尺度功能器件的需求將越來越迫切。奈米線(nanowire)具有極高的表面積對體積比,此一維結構在表面特徵、機械性質、量子效應等方面皆有不俗的表現,因此根據不同材料的特性,其奈米線結構也相應的衍生了各種不同的應用,諸如:氣體感測器、場效電晶體以及發光元件等。 Driven by the highly integrated wave, the demand for nanoscale functional devices by modern technology will become more and more urgent. The nanowire has a very high surface area to volume ratio. This one-dimensional structure has excellent performance in surface characteristics, mechanical properties, quantum effects, etc. Therefore, according to the characteristics of different materials, the nanowire structure is also Correspondingly, various applications have been derived, such as gas sensors, field effect transistors, and light-emitting elements.
然而,在利用奈米線製作元件的難度在於,如何克服其尺寸問題並加以對位、控制是一個難點。倘若能夠控制奈米線使之大量規則排列,將會使得奈米線能夠順利的導入量產製程。目前已知的製備奈米線薄膜方法大致有:介電泳(Dielectrophoresis)、微流道(Micro-fluid channel)、吹膜(Blown film extrusion)等方法,而以上製程皆需將奈米線自成長基板取下,再均勻分散至溶劑中,屬於濕式製程,其在準備或排列上需耗費較長時間,並且在將奈米線自成長基板上取下的過程中,很容易損壞奈米線之結構而影響其功能。 However, the difficulty in making components using nanowires is that how to overcome the size problem and to align and control it is a difficult point. If you can control the nanowires to make a large number of regular arrangements, it will enable the nanowires to be smoothly introduced into the mass production process. Currently known methods for preparing nanowire films include: Dielectrophoresis, Micro-fluid channel, and Blown film extrusion, and the above processes require self-growth of the nanowires. The substrate is removed and uniformly dispersed into the solvent, which is a wet process, which takes a long time to prepare or arrange, and the nanowire is easily damaged during the process of removing the nanowire from the growth substrate. The structure affects its function.
有鑒於此,提供一種耗時短、轉移效率高之轉移奈米線之方法實 為必要。 In view of this, a method for transferring a nanowire with short time and high transfer efficiency is provided. As necessary.
一種轉移奈米線之方法,其包括以下步驟:提供一第一基板,該第一基板具有第一表面,該第一表面有基本垂直於該第一表面之奈米線陣列;提供一第二基板,該第二基板具有第二表面,該第二基板為軟性基板;將該第二基板與該第一基板相互蓋合,該第二表面朝向該第一表面;壓合該第一基板與該第二基板使得該第二基板按照一預定方向推倒該奈米線陣列,從而將其中的至少一部份奈米線轉移至該第二表面;提供一第三基板,該第三基板具有第三表面;將該第二基板與該第三基板相互蓋合,該第二表面朝向該第三表面;壓合相互蓋合的該第二基板與該第三基板,以使該第二表面之奈米線轉移至該第三表面。 A method of transferring a nanowire, comprising the steps of: providing a first substrate, the first substrate having a first surface, the first surface having an array of nanowires substantially perpendicular to the first surface; providing a second The second substrate has a second surface, the second substrate is a flexible substrate; the second substrate and the first substrate are covered with each other, the second surface faces the first surface; and the first substrate is pressed The second substrate causes the second substrate to push the nanowire array in a predetermined direction to transfer at least a portion of the nanowires to the second surface; providing a third substrate having a third substrate a third surface; the second substrate and the third substrate are covered with each other, the second surface faces the third surface; and the second substrate and the third substrate are pressed together to make the second surface The nanowire is transferred to the third surface.
相對於先前技術,本發明採用干式製程將奈米線轉移至目標基板,耗時短,轉移效率高。 Compared with the prior art, the present invention uses a dry process to transfer the nanowire to the target substrate, which is short in time and high in transfer efficiency.
10‧‧‧第一基板 10‧‧‧First substrate
100‧‧‧第一表面 100‧‧‧ first surface
102‧‧‧奈米線陣列 102‧‧‧Nano line array
1020‧‧‧奈米線 1020‧‧‧Neon line
20‧‧‧第二基板 20‧‧‧second substrate
200‧‧‧第二表面 200‧‧‧ second surface
30‧‧‧滾輪裝置 30‧‧‧Roller device
31‧‧‧第一滾輪 31‧‧‧First wheel
32‧‧‧第二滾輪 32‧‧‧Second wheel
33‧‧‧傳送帶 33‧‧‧Conveyor belt
40‧‧‧第三基板 40‧‧‧ third substrate
400‧‧‧第三表面 400‧‧‧ third surface
圖1係本發明實施例提供的第一基板以及第二基板之示意圖,第一基板垂直生長有奈米線陣列。 FIG. 1 is a schematic diagram of a first substrate and a second substrate according to an embodiment of the present invention, wherein a first substrate vertically grows with a nanowire array.
圖2係將該第一基板和該第二基板通過滾輪裝置壓合的示意圖。 2 is a schematic view of the first substrate and the second substrate being pressed by a roller device.
圖3係該第二基板轉印有該第一基板上的奈米線的效果示意圖。 FIG. 3 is a schematic view showing the effect of the second substrate on which the nanowires on the first substrate are transferred.
圖4係將第二基板上的奈米線轉移到第三基板上的步驟示意圖。 Figure 4 is a schematic view showing the steps of transferring the nanowires on the second substrate onto the third substrate.
下面將結合圖式對本發明作進一步詳細說明。 The invention will now be described in further detail with reference to the drawings.
請參閱圖1至圖4,本發明實施例提供的轉移奈米線之方法包括以下步驟: 提供一第一基板10,該第一基板10具有一平坦的第一表面100,該第一表面100有基本垂直於該第一表面100之奈米線陣列102奈米線陣列102包括大量的有序或無序排列的奈米線1020。該第一基板10可以是矽基板。 Referring to FIG. 1 to FIG. 4, the method for transferring a nanowire according to an embodiment of the present invention includes the following steps: A first substrate 10 is provided. The first substrate 10 has a flat first surface 100. The first surface 100 has a nanowire array 102 substantially perpendicular to the first surface 100. The nanowire array 102 includes a large number of Ordered or unordered nanowires 1020. The first substrate 10 may be a germanium substrate.
提供一第二基板20,該第二基板20具有一平坦的第二表面200,該第二基板20為軟性基板,該軟性基板採用軟性材料製作,優選地,採用具有惰性和疏水性的聚甲基丙烯酸甲酯製作。 A second substrate 20 is provided. The second substrate 20 has a flat second surface 200. The second substrate 20 is a flexible substrate. The flexible substrate is made of a soft material. Preferably, the substrate is made of inert and hydrophobic. Made of methyl acrylate.
將該第二基板20與該第一基板10相互蓋合,該第二表面200朝向該第一表面100。 The second substrate 20 and the first substrate 10 are covered with each other, and the second surface 200 faces the first surface 100.
使用滾輪裝置30壓合相互蓋合的該第一基板10與該第二基板20。本實施例中,滾輪裝置30包括第一滾輪31,第二滾輪32和傳送帶33。該第一滾輪31帶動該傳送帶33移動,該第二滾輪32位於該傳送帶33上方,當相互蓋合的第一基板10和第二基板20移動至該第二滾輪32下方時,第二滾輪32對該第二基板20和該第一基板10施壓,使該第二基板20和該第一基板10進一步貼合,並推倒垂直生長於該第一基板10上的奈米線陣列102,同時,在壓合過程中藉由該第二基板20的黏滯力將該奈米線陣列102中的至少一部份奈米線,或者整個奈米線陣列轉印於該第二表面200。由於滾輪裝置30的滾動方向確定,因此該奈米線陣列102受到的壓力的方向確定,因此其傾倒的方向確定。 The first substrate 10 and the second substrate 20 that are covered by each other are pressed by the roller device 30. In the present embodiment, the roller device 30 includes a first roller 31, a second roller 32, and a conveyor belt 33. The first roller 31 drives the conveyor belt 33 to move. The second roller 32 is located above the conveyor belt 33. When the first substrate 10 and the second substrate 20 that are covered by each other move below the second roller 32, the second roller 32 Pressing the second substrate 20 and the first substrate 10 to further adhere the second substrate 20 and the first substrate 10, and pushing down the nanowire array 102 vertically grown on the first substrate 10 while At least a portion of the nanowires in the array of nanowires 102, or the entire array of nanowires, are transferred to the second surface 200 by the viscous force of the second substrate 20 during the lamination process. Since the rolling direction of the roller device 30 is determined, the direction of the pressure received by the nanowire array 102 is determined, and thus the direction in which it is tilted is determined.
如果奈米線陣列102內的奈米線1020有序排列,由於奈米線陣列102的傾倒方向確定,因此可使得轉移至該第二表面200的所有奈米線亦呈有序排列。被轉移至該第二表面200的奈米線平躺在該第二表面200。 If the nanowires 1020 in the nanowire array 102 are in an ordered arrangement, since the tilting direction of the nanowire array 102 is determined, all of the nanowires transferred to the second surface 200 can also be ordered. The nanowires transferred to the second surface 200 lie flat on the second surface 200.
本發明實施例採用的第一基板10及第二基板20的作用面(即第一表面100和第二表面200)均平坦,以保證被轉移的奈米線的數量和面積較大。 The active surfaces of the first substrate 10 and the second substrate 20 (ie, the first surface 100 and the second surface 200) used in the embodiments of the present invention are both flat to ensure a large number and area of the transferred nanowires.
為了使盡可能多的奈米線1020可以被轉移到第二表面200,可以重複上述步驟,使得原本未被推倒或者未被轉移的奈米線1020被推倒或者被轉移。 In order to allow as many nanowires 1020 as possible to be transferred to the second surface 200, the above steps may be repeated such that the nanowires 1020 that were not originally pushed or transferred are pushed down or transferred.
進一步地,提供一第三基板40,該第三基板40可以為需要使用奈米線的目標基板。該第三基板40具有一平坦的第三表面400。該第三基板40可以為硬式基板,例如二氧化矽基板,亦可以是可挠性基板。 Further, a third substrate 40 is provided, and the third substrate 40 may be a target substrate that requires a nanowire. The third substrate 40 has a flat third surface 400. The third substrate 40 may be a hard substrate such as a ceria substrate or a flexible substrate.
類似將第二基板20和該第一基板10,將該第二基板20與該第三基板40相互蓋合,該第二表面200朝向該第三表面400。可以使用滾輪壓合相互蓋合的該第二基板20與該第三基板40,以使該第二表面200之奈米線轉移至該第三表面400,也可以其他方式向壓合的第二基板20和第三基板40施壓。 Similarly, the second substrate 20 and the first substrate 10 are used to cover the second substrate 20 and the third substrate 40. The second surface 200 faces the third surface 400. The second substrate 20 and the third substrate 40 that are mutually covered may be pressed by a roller to transfer the nanowire of the second surface 200 to the third surface 400, or may be pressed to the second surface in other manners. The substrate 20 and the third substrate 40 are pressed.
本發明提供之轉移奈米線之方法為干式製程,無須將奈米線陣列從其生長基板上取下並均勻分散至溶劑中,從而避免破壞預期的奈米線的表面特性,而且,本發明可轉移的奈米線基本上為有序排列,因此可減少重新排列奈米線的時間,轉移效率高。 The method for transferring the nanowires provided by the invention is a dry process, which does not need to remove the nanowire array from the growth substrate and uniformly disperse into the solvent, thereby avoiding destroying the surface characteristics of the expected nanowire, and The transferable nanowires are basically arranged in an orderly manner, so that the time for rearranging the nanowires can be reduced, and the transfer efficiency is high.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
10‧‧‧第一基板 10‧‧‧First substrate
20‧‧‧第二基板 20‧‧‧second substrate
30‧‧‧滾輪裝置 30‧‧‧Roller device
31‧‧‧第一滾輪 31‧‧‧First wheel
32‧‧‧第二滾輪 32‧‧‧Second wheel
33‧‧‧傳送帶 33‧‧‧Conveyor belt
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US20060188721A1 (en) * | 2005-02-22 | 2006-08-24 | Eastman Kodak Company | Adhesive transfer method of carbon nanotube layer |
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