TWI476966B - Metallic frame structure and led structure having the same - Google Patents
Metallic frame structure and led structure having the same Download PDFInfo
- Publication number
- TWI476966B TWI476966B TW101111416A TW101111416A TWI476966B TW I476966 B TWI476966 B TW I476966B TW 101111416 A TW101111416 A TW 101111416A TW 101111416 A TW101111416 A TW 101111416A TW I476966 B TWI476966 B TW I476966B
- Authority
- TW
- Taiwan
- Prior art keywords
- lead frame
- metal bracket
- blind hole
- metal
- emitting diode
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Landscapes
- Led Device Packages (AREA)
Description
本發明乃是關於一種金屬支架結構及其發光二極體結構，特別是指一種應用方形扁平無接腳封裝(Quad Flat No-lead)技術，以封裝體封裝金屬支架的發光二極體結構，以及設置於發光二極體結構內的金屬支架結構。The present invention relates to a metal stent structure and a light emitting diode structure thereof, and more particularly to a light emitting diode structure using a quad flat no-lead technology to encapsulate a metal stent in a package body. And a metal bracket structure disposed in the structure of the light emitting diode.
為著改善習知發光二極體的製程，已發展使用『方形扁平無接腳封裝』(Quad Flat No-lead,QFN)技術製造發光二極體。其金屬支架裸露於封裝體的底面，具較佳散熱效能；此外，產品也具有較薄的尺寸。In order to improve the process of the conventional light-emitting diode, a light-emitting diode has been developed using the "Quad Flat No-lead" (QFN) technology. The metal bracket is exposed on the bottom surface of the package to provide better heat dissipation performance; in addition, the product has a thinner size.
相關專利如本案申請人之中華民國專利公告號TW 551694之『表面黏著電子元件之金屬支架結構』，其在於增加膠體與金屬支架之連接強度，使產品在切割製程時，改善膠材的剝離(peeling)的問題。The related patents are the "Metal Bracket Structure of Surface Adhesive Electronic Components" of the applicant's Republic of China Patent Publication No. TW 551694, which is to increase the connection strength between the colloid and the metal support, so as to improve the peeling of the adhesive during the cutting process ( Peeling) problem.
基於上述的基礎，本發明針對QFN製程的發光二極體封裝結構，作進一步的研發改善。不僅考量承受機械剪力脫離的問題，更進一步考量多組金屬支架之間連接部(bar)因切割製程高溫所造成膠材剝離及毛邊問題。此外，QFN製程的發光二極體封裝結構由於金屬支架裸露於封裝體的底面，金屬支架的兩個導線架之間是水氣入侵最短路徑之處，產品容易因水氣入侵固晶區而導致晶片發光效率的衰退，因此本發明也考量如何改善水氣侵入的問題。Based on the above, the present invention is further developed and improved for the LED package structure of the QFN process. Not only consider the problem of mechanical shear force detachment, but also consider the problem of peeling and burrs of the joints between the sets of metal brackets due to the high temperature of the cutting process. In addition, the LED package structure of the QFN process is exposed on the bottom surface of the package, and the two lead frames of the metal bracket are the shortest path of water vapor intrusion, and the product is easily invaded by the water vapor in the solid crystal region. The luminescence efficiency of the wafer is degraded, so the present invention also considers how to improve the problem of moisture intrusion.
緣是，本發明人有感上述問題之可改善，乃潛心研究並配合學理之運用，而提出一種設計合理且有效改善上述問題之本發明。The reason is that the present inventors have felt that the above problems can be improved, and that the present invention has been deliberately studied and used in conjunction with the theory, and a present invention which is reasonable in design and effective in improving the above problems has been proposed.
本發明所要解決的技術問題，在於提供一種發光二極體結構及其金屬支架結構，利用蝕刻製程的半蝕刻方式，以設計凸型導線架，以及半蝕的盲孔以加強金屬支架與封裝體之間的結合強度。The technical problem to be solved by the present invention is to provide a light-emitting diode structure and a metal support structure thereof, and to design a convex lead frame and a semi-etched blind hole to reinforce the metal support and the package by using a half etching method of an etching process. The strength of the bond between.
此外，本發明要解決的技術問題，更在於提供一種發光二極體結構及其金屬支架結構，利用三段式結構以強化金屬支架的兩個導線架之間的電性絕緣區(即水氣入侵最短路徑)，藉由多段式結構以阻絕水氣入侵並強化膠材接著力。In addition, the technical problem to be solved by the present invention is to provide a light-emitting diode structure and a metal bracket structure thereof, which utilizes a three-stage structure to strengthen an electrical insulation region between two lead frames of a metal bracket (ie, water and gas). Invasion shortest path), with a multi-stage structure to block water intrusion and strengthen the adhesive force.
為了解決上述技術問題，根據本發明之其中一種方案，提供一種金屬支架結構，其頂面封裝一封裝體且形成一透光部，該金屬支架結構包括一金屬支架，其包括有一第一導線架及一第二導線架，其中該第一導線架朝向該第二導線架的邊緣局部突出一凸出部，其中該第一導線架與該第二導線架之間形成一電性絕緣區，其中該金屬支架具有至少一第一盲孔及至少一第二盲孔的其中之一或其組合，該第一盲孔係由該金屬支架的頂面向下凹陷形成，且該第一盲孔的位置係對應該透光部的內徑輪廓，該第二盲孔靠近該電性絕緣區。In order to solve the above problems, according to one aspect of the present invention, a metal bracket structure is provided, the top surface of which is packaged with a package body and forms a light transmitting portion, and the metal bracket structure includes a metal bracket including a first lead frame And a second lead frame, wherein the first lead frame partially protrudes toward the edge of the second lead frame by a protrusion, wherein an electrically insulating region is formed between the first lead frame and the second lead frame, wherein The metal bracket has one or a combination of at least one first blind hole and at least one second blind hole formed by a top surface of the metal bracket, and a position of the first blind hole Corresponding to the inner diameter profile of the light transmitting portion, the second blind hole is adjacent to the electrically insulating region.
此外，為了解決上述技術問題，本發明還提供一種發光二極體結構，其包括一金屬支架、至少一發光二極體晶片及一封裝體。該金屬支架包括包括有一第一導線架及一第二導線架，其中該第一導線架面向該第二導線架的邊緣突出一凸出部，該第一導線架與該第二導線架之間形成一電性絕緣區，其中該金屬支架具有至少一第一盲孔及至少一第二盲孔的其中之一或其組合，該第一盲孔係由該金屬支架的頂面向下凹陷形成，該第二盲孔靠近該電性絕緣區；該至少一發光二極體晶片設置於該金屬支架上，且電性連接於該第一導線架及該第二導線架；該封裝體包括一封裝該金屬支架的基部、及一位於該至少一發光二極體晶片上方的透光部，其中該第一盲孔的位置係對應該透光部的內徑輪廓。In addition, in order to solve the above technical problem, the present invention further provides a light emitting diode structure including a metal bracket, at least one light emitting diode chip, and a package. The metal bracket includes a first lead frame and a second lead frame, wherein the first lead frame protrudes toward the edge of the second lead frame by a protrusion, and between the first lead frame and the second lead frame Forming an electrically insulating region, wherein the metal bracket has one or a combination of at least one first blind hole and at least one second blind hole formed by a top surface of the metal bracket The second blind hole is adjacent to the electrically insulating region; the at least one light emitting diode chip is disposed on the metal bracket and electrically connected to the first lead frame and the second lead frame; the package includes a package a base portion of the metal bracket and a light transmitting portion above the at least one light emitting diode wafer, wherein the first blind hole is located at an inner diameter contour corresponding to the light transmitting portion.
本發明至少具有以下有益效果：本發明可克服因切割過程受機械剪力所造成與導線架剝離的問題。本發明利用半蝕刻技術，製程更成熟，可提昇量產良率。此外，提高封裝的穩定性，增加產品可靠度和壽命。The present invention has at least the following advantageous effects: the present invention can overcome the problem of peeling off the lead frame caused by mechanical shearing force due to the cutting process. The invention utilizes the half etching technology, the process is more mature, and the mass production yield can be improved. In addition, it improves the stability of the package and increases product reliability and longevity.
為了能更進一步瞭解本發明為達成既定目的所採取之技術、方法及功效，請參閱以下有關本發明之詳細說明、圖式，相信本發明之目的、特徵與特點，當可由此得以深入且具體之瞭解，然而所附圖式與附件僅提供參考與說明用，並非用來對本發明加以限制者。In order to further understand the technology, method and effect of the present invention in order to achieve the intended purpose, reference should be made to the detailed description and drawings of the present invention. The drawings and the annexed drawings are intended to be illustrative and not to limit the invention.
請參考圖1，為本發明之發光二極體結構的立體分解示意圖。本發明之發光二極體結構100包括一金屬支架10、一晶片20、及一覆蓋該金屬支架10及該晶片20的封裝體30。金屬支架10包括有一第一導線架11及一第二導線架12。其中該晶片20以發光二極體晶片為例說明，但不限制於此。本實施例的發光二極體晶片20以導線(bonding wire)22a及22b分別電性連接於該第一導線架11及該第二導線架12；封裝體30可分為封裝該金屬支架10的基部32及位於晶片20上方的透光部34。封裝體30的材料可以是樹脂或矽膠等。然而，並不以此為限。Please refer to FIG. 1 , which is a perspective exploded view of the structure of the light emitting diode of the present invention. The LED structure 100 of the present invention includes a metal holder 10, a wafer 20, and a package 30 covering the metal holder 10 and the wafer 20. The metal bracket 10 includes a first lead frame 11 and a second lead frame 12. The wafer 20 is exemplified by a light-emitting diode wafer, but is not limited thereto. The LEDs 20 of the present embodiment are electrically connected to the first lead frame 11 and the second lead frame 12 by bonding wires 22a and 22b, respectively. The package 30 can be divided into the metal frame 10 for packaging. The base portion 32 and the light transmitting portion 34 above the wafer 20. The material of the package 30 may be a resin or silicone or the like. However, it is not limited to this.
此圖僅為示意說明，實際製造的主要過程是先在一金屬板體形成多組金屬支架10，該些多組的金屬支架10之間各以數個連接部(bar)119、129彼此連接。然後，將發光二極體晶片20以打線或覆晶的方式電性連接於該金屬支架10之後，再以該封裝體30分別封裝該些金屬支架10及該發光二極體晶片20。最後，將該多組金屬支架10分別切割分離。完成後，如圖2所示的。其中本實施例以一個發光二極體晶片20表示，然而其數量與種類並不限制於此，可以是至少一個發光二極體晶片。當發光二極體晶片選用一白光晶片時，此發光二極體結構不需透過螢光粉來混光，即為一白光的發光二極體結構。當選用藍光晶片時，可於藍光晶片上塗佈黃色螢光粉或於封裝膠內摻混黃色螢光粉來進行混光，亦可得到一個白光的發光二極體結構。當發光二極體為一紫外光晶片時，可於紫外光晶片上塗佈紅綠藍螢光粉或於封裝結構內掺混紅綠藍螢光粉來得到一白光的發光二極體結構。This figure is only for illustration. The main process of actual manufacturing is to form a plurality of metal brackets 10 in a metal plate body, and the plurality of metal brackets 10 are connected to each other by a plurality of connecting portions 119 and 129. . Then, the LEDs 20 are electrically connected to the metal holder 10 by wire bonding or flip chip bonding, and then the metal holders 10 and the LED chips 20 are respectively packaged by the package 30. Finally, the plurality of sets of metal stents 10 are separately cut and separated. After completion, as shown in Figure 2. The embodiment is represented by one LED chip 20, however, the number and kind thereof are not limited thereto, and may be at least one LED chip. When a white light wafer is selected for the light emitting diode chip, the light emitting diode structure does not need to be mixed by the fluorescent powder, that is, a white light emitting diode structure. When a blue light wafer is selected, yellow phosphor powder may be coated on the blue light wafer or yellow phosphor powder may be blended in the encapsulant for light mixing, or a white light emitting diode structure may be obtained. When the light emitting diode is an ultraviolet light wafer, the red green blue fluorescent powder may be coated on the ultraviolet light wafer or the red green blue fluorescent powder may be blended in the package structure to obtain a white light emitting diode structure.
請參考圖1及圖1A，其中圖1A為本發明之金屬支架的立體圖。該金屬支架10的第一導線架(first lead frame)11及第二導線架(second lead frame)12，構成本發明之發光二極體之金屬支架結構。本實施例的特徵之一在於該第一導線架11大體呈凸型，該第二導線架12大體呈凹型，兩者相互配合。更具體的說，該第一導線架11面向該第二導線架12的邊緣局部突出一凸出部110，該第二導線架12凹陷地形成一對應該凸出部110的凹陷部120，該第一導線架11與該第二導線架12之間形成一呈多個彎折狀的電性絕緣區G。Please refer to FIG. 1 and FIG. 1A, wherein FIG. 1A is a perspective view of a metal bracket of the present invention. The first lead frame 11 and the second lead frame 12 of the metal bracket 10 constitute a metal bracket structure of the light emitting diode of the present invention. One of the features of this embodiment is that the first lead frame 11 is substantially convex, and the second lead frame 12 is substantially concave, and the two are matched with each other. More specifically, the first lead frame 11 partially protrudes from the edge of the second lead frame 12 by a protrusion 110, and the second lead frame 12 is recessed to form a pair of recesses 120 corresponding to the protrusion 110. A plurality of bent electrical insulating regions G are formed between the first lead frame 11 and the second lead frame 12.
本實施例為著強化該金屬支架10與該封裝體30的結合強度，第一導線架11的頂面形成二第一盲孔115；此外，該第一導線架11及該第二導線架12靠近該電性絕緣區G的邊緣各形成多數個第二盲孔111a、111b、121a、121b。In this embodiment, in order to strengthen the bonding strength between the metal bracket 10 and the package body 30, the top surface of the first lead frame 11 forms two first blind holes 115. In addition, the first lead frame 11 and the second lead frame 12 are formed. A plurality of second blind holes 111a, 111b, 121a, 121b are formed adjacent to the edges of the electrically insulating region G.
本實施例中上述第一盲孔115為呈彎弧形的盲孔。該些第二盲孔為呈半圓形的盲孔。本發明所指的『盲孔』(blind vias)是指未完全貫穿導線架，『半盲孔』表示其深度大約貫穿導線架的一半厚度，故盲孔與半盲孔的差異在於多了蝕刻深度的限定。在本實施例中，該金屬支架10是使用蝕刻製程，並且為多元化半蝕製程(half-etching)結構設計，其優點在於成品尺寸控制精準，並且可降低成本。然而，本發明的該些盲孔並不限制於上述形狀。In the embodiment, the first blind hole 115 is a blind hole having a curved shape. The second blind holes are blind holes having a semicircular shape. The term "blind vias" as used in the present invention means that the lead frame is not completely penetrated, and the "semi-blind hole" means that the depth thereof is about half the thickness of the lead frame, so the difference between the blind hole and the half blind hole is that the etching is more Depth of depth. In the present embodiment, the metal bracket 10 is an etching process and is designed for a plurality of half-etching structures, which has the advantages of accurate dimensional control of the finished product and reduced cost. However, the blind holes of the present invention are not limited to the above shapes.
本實施例中該第一導線架11的該凸出部110大體呈矩形，該凸出部110的轉角各形成一斜邊，該些第二盲孔111a、111b由該凸出部110的該些斜邊向內蝕刻而成。上述第一導線架11的該些第二盲孔111a、111b與第二導線架12的該些第二盲孔121a、121b彼此相對，並且形成於該第一導線架11及該第二導線架12的頂面邊緣，該些第二盲孔111a、111b、121a、121b呈半圓形，其蝕刻深度小於該金屬支架10的一半高度。上述實施方式中，凸出部110的形狀以矩形為例，但不以此為限，凸出部的形狀可由晶片的擺放方式或晶片的形狀所定義，可依設計者而定，如多邊形或圓弧形的凸出部。第一導線架11和第二導線架12的第二盲孔111a、111b、121a、121b可為一大的半圓形盲孔和一小的半圓形盲孔的任意組合，但不以此限。In the embodiment, the protruding portion 110 of the first lead frame 11 is substantially rectangular, and the corners of the protruding portion 110 each form a beveled edge, and the second blind holes 111a, 111b are formed by the protruding portion 110. These hypotenuses are etched inward. The second blind holes 111a, 111b of the first lead frame 11 and the second blind holes 121a, 121b of the second lead frame 12 are opposite to each other, and are formed on the first lead frame 11 and the second lead frame The top edges of the second blind holes 111a, 111b, 121a, 121b are semi-circular with an etching depth less than half the height of the metal bracket 10. In the above embodiment, the shape of the protrusion 110 is exemplified by a rectangle. However, the shape of the protrusion may be defined by the placement of the wafer or the shape of the wafer, and may be determined by a designer, such as a polygon. Or a circular arc-shaped projection. The second blind holes 111a, 111b, 121a, 121b of the first lead frame 11 and the second lead frame 12 may be any combination of a large semicircular blind hole and a small semicircular blind hole, but not limit.
上述結構的優點在於，藉由凸型及凹型相配合的一對導線架11、12、以及呈多個彎折狀的該電性絕緣區G，金屬支架10與封裝體30的結合力得以加強；此外，第二盲孔111a、111b、121a、121b也可加強金屬支架10與封裝體30的結合力。相較於申請人前案的導線架之間的電性絕緣區呈一直線，本發明可以克服側向機械剪力問題，解決導線架與膠體剝離的現象。The above structure is advantageous in that the bonding force of the metal bracket 10 and the package body 30 is enhanced by the pair of lead frames 11, 12 which are matched by the convex and concave shapes, and the electrically insulating region G which is formed in a plurality of bends. In addition, the second blind holes 111a, 111b, 121a, 121b can also strengthen the bonding force of the metal bracket 10 and the package body 30. Compared with the electrical insulation zone between the lead frames of the applicant's previous case, the invention can overcome the lateral mechanical shearing problem and solve the phenomenon that the lead frame and the colloid are peeled off.
請參閱圖1A，為本發明之金屬支架另一角度的立體圖。本發明之金屬支架10的底部亦具有改良的設計，該金屬支架10的外緣底面向內凹陷形成一全周的階梯結構112、122，該全周的階梯結構112、122環繞金屬支架10底部的全部周圍。此外，該第一導線架11及該第二導線架12的底面具有多個由該階梯結構112、122向內凹陷形成的第三盲孔114、124。本實施例中，該些第三盲孔114、124為向內凹陷半圓形的半盲孔，每一金屬支架10的四個側邊各形成有二對的第三盲孔114、124。另外，本發明的金屬支架10外緣向外突出多數連接部119、129以連接另一金屬支架(圖未示)。本發明利用全周式的階梯結構112、122以及連接部119、129可以減少切割厚度及毛邊，同時減少高溫切割的時間；藉由毛邊的減少，本發明可以減少切割製程的切斷點水氣入侵問題，以及因為切割製程高溫造成的膠材剝離問題。再者，該些第三盲孔114、124可以強化第一及第二導線架11、12與封裝體30之間的結合力。Please refer to FIG. 1A, which is a perspective view of another angle of the metal bracket of the present invention. The bottom of the metal bracket 10 of the present invention also has an improved design. The outer edge of the metal bracket 10 is recessed inwardly to form a full-circumferential stepped structure 112, 122. The entire peripheral stepped structure 112, 122 surrounds the bottom of the metal bracket 10. All around. In addition, the bottom surfaces of the first lead frame 11 and the second lead frame 12 have a plurality of third blind holes 114, 124 recessed inwardly by the stepped structures 112, 122. In this embodiment, the third blind holes 114 and 124 are semi-blind holes that are recessed inwardly into a semicircle, and the four side edges of each of the metal brackets 10 are formed with two pairs of third blind holes 114 and 124. In addition, the outer edge of the metal bracket 10 of the present invention protrudes outwardly from the plurality of connecting portions 119, 129 to connect another metal bracket (not shown). The invention utilizes the full-circumferential stepped structures 112, 122 and the connecting portions 119, 129 to reduce the cutting thickness and the burrs, and at the same time reduce the time of high-temperature cutting; by the reduction of the burrs, the invention can reduce the cutting point of the cutting process Intrusion problems, as well as stripping problems caused by high temperatures in the cutting process. Moreover, the third blind holes 114, 124 can strengthen the bonding force between the first and second lead frames 11, 12 and the package body 30.
值得注意的是，第三盲孔114、124的位置係根據連接部119、129的位置而對稱存在。亦即第三盲孔114、124位於連接部119、129的兩側，使得封裝體30咬合於連接部119兩側之第三盲孔114內，並咬合於連接部129兩側之第三盲孔124內，藉此更加有助於第一、第二導線架11、12與封裝體30的結合力。換言之，當切割兩個金屬支架10之間的連接部119、129時，位於第三盲孔114、124內的封裝體30可抓牢第一及第二導線架11、12，使得封裝體30不易與金屬支架10剝離(peeling)。It is to be noted that the positions of the third blind holes 114, 124 are symmetrically present depending on the positions of the connecting portions 119, 129. That is, the third blind holes 114 and 124 are located on both sides of the connecting portions 119 and 129 such that the package body 30 is engaged in the third blind hole 114 on both sides of the connecting portion 119 and is engaged in the third blindness on both sides of the connecting portion 129. In the hole 124, the bonding force between the first and second lead frames 11, 12 and the package 30 is further facilitated. In other words, when the connecting portions 119, 129 between the two metal brackets 10 are cut, the package 30 located in the third blind holes 114, 124 can grip the first and second lead frames 11, 12, so that the package 30 It is not easy to peel with the metal bracket 10.
請參考圖1及圖2，本實施例於該第一導線架11的頂面向下凹陷形成二個第一盲孔115，其位於透光部34的內徑輪廓，亦即第一盲孔115只要落在透光部34內徑即可，較佳為順著透光部34的輪廓而設置第一盲孔115。此實施例上述透過該些第一盲孔115，本發明可加強金屬支架10與透光部34的底部邊緣形成環狀結構，以增加結合強度。然而，該些第一盲孔115並不限制形成於第一導線架11，只要是形成於該金屬支架10的頂面，較佳的是對應於透光部34的內徑輪廓，後面將以不同實施例舉例說明。Referring to FIG. 1 and FIG. 2 , in the embodiment, two first blind holes 115 are formed in the top surface of the first lead frame 11 and are located on the inner diameter of the light transmitting portion 34 , that is, the first blind hole 115 . It suffices to fall within the inner diameter of the light transmitting portion 34, and it is preferable to provide the first blind hole 115 along the contour of the light transmitting portion 34. In this embodiment, the first blind hole 115 is penetrated through the first blind hole 115. The metal frame 10 of the present invention can form a ring structure with the bottom edge of the light transmitting portion 34 to increase the bonding strength. However, the first blind holes 115 are not limited to be formed on the first lead frame 11, as long as they are formed on the top surface of the metal bracket 10, preferably corresponding to the inner diameter contour of the light transmitting portion 34, Different embodiments are illustrated.
請參考圖1、圖1A及圖3，本實施例的該金屬支架10還形成多個貫穿孔117、127，其位於第一導線架11和第二導線架12的直角轉角處及透光部34的外圍。以該貫穿孔117的圖式說明，其形狀略呈倒T形，圖1顯示一較窄且外露於第一導線架11頂面的上孔部1171，圖1A及圖3顯示一較寬且外露於第一導線架11底面的下孔部1172，亦即下孔部1172的孔徑大於上孔部1171的孔徑。當封裝體30填入該貫穿孔117時，如同貫穿孔117、127之T型般咬合在金屬架10。本實施例透過T形的貫穿孔117、127，可以增加封裝體30咬合金屬支架10的強度，並且可減緩水氣侵入。Referring to FIG. 1 , FIG. 1A and FIG. 3 , the metal bracket 10 of the embodiment further defines a plurality of through holes 117 and 127 at right angles of the first lead frame 11 and the second lead frame 12 and the transparent portion. The periphery of 34. The shape of the through hole 117 is slightly inverted T-shaped. FIG. 1 shows an upper hole portion 1171 which is narrow and exposed on the top surface of the first lead frame 11. FIG. 1A and FIG. 3 show a wide and The lower hole portion 1172 exposed on the bottom surface of the first lead frame 11, that is, the hole diameter of the lower hole portion 1172 is larger than the hole diameter of the upper hole portion 1171. When the package body 30 is filled in the through hole 117, it is engaged with the metal frame 10 like the T-type of the through holes 117, 127. In this embodiment, the through-holes 117, 127 of the T-shape can increase the strength of the package 30 to engage the metal bracket 10, and can reduce the intrusion of moisture.
請繼續參考圖1及圖1A，本實施例的發光二極體結構具有另一特徵如下，該第一導線架11及該第二導線架12靠近該電性絕緣區G的頂面邊緣各凹陷形成一上凹槽113、123，該第一導線架11及該第二導線架12靠近該電性絕緣區G的底面邊緣各凹陷形成一下凹槽116、126。上述的上凹槽113、123及下凹槽116、126為局部蝕刻該些導線架11、12的表面而成。With reference to FIG. 1 and FIG. 1A , the LED structure of the present embodiment has another feature. The first lead frame 11 and the second lead frame 12 are recessed near the top edge of the electrically insulating region G. An upper recess 113, 123 is formed, and the first lead frame 11 and the second lead frame 12 are recessed adjacent to the bottom edge of the electrically insulating region G to form a recess 116, 126. The upper grooves 113, 123 and the lower grooves 116, 126 are formed by partially etching the surfaces of the lead frames 11, 12.
請參閱圖4及圖4A，圖4為本發明的俯視圖，圖4A為沿著圖4中AA線的剖視圖。本實施例的上凹槽的113、123剖面呈彎弧狀，該下凹槽116、126的剖面呈矩形狀。其中上述二個上凹槽113、123之間的寬度大於該電性絕緣區G的寬度，上述二個下凹槽116、126之間的寬度大於該電性絕緣區G的寬度，實際上，上述二個下凹槽116、126之間的寬度又大於上述二個上凹槽113、123之間的寬度，藉此本發明形成一阻絕水氣入侵的多段式結構，其位於金屬支架10的頂面與底面之間且位於該電性絕緣區G的兩側。由於發光二極體結構100水氣入侵到內部最短的路徑乃是位於該電性絕緣區G，特別是容易由其底面侵入。本發明藉由上述的結構，設計三段式的結構，透過三段不同寬度結構以強化電性絕緣區G的隔絕水氣的性能，並且可強化封裝體30與金屬支架10的接著力。值得注意的是，該下凹槽116、126的剖面亦可成彎弧狀，並不限於矩形結構。4 and FIG. 4A, FIG. 4 is a plan view of the present invention, and FIG. 4A is a cross-sectional view taken along line AA of FIG. The upper grooves 113 and 123 of the present embodiment have a curved cross section, and the lower grooves 116 and 126 have a rectangular cross section. The width between the two upper grooves 113, 123 is greater than the width of the electrically insulating region G, and the width between the two lower grooves 116, 126 is greater than the width of the electrically insulating region G. The width between the two lower grooves 116, 126 is greater than the width between the two upper grooves 113, 123, whereby the present invention forms a multi-segment structure for resisting moisture intrusion, which is located on the metal bracket 10. Between the top surface and the bottom surface and on both sides of the electrically insulating region G. Since the shortest path of the water vapor intrusion into the interior of the light-emitting diode structure 100 is located in the electrically insulating region G, in particular, it is easily invaded by the bottom surface thereof. According to the above structure, the present invention designs a three-stage structure, and transmits three different width structures to strengthen the moisture-insulating property of the electrical insulating region G, and can strengthen the adhesion of the package 30 and the metal bracket 10. It should be noted that the cross section of the lower grooves 116, 126 may also be curved, and is not limited to a rectangular structure.
請參閱圖5，為本發明之發光二極體結構第二實施例的立體圖。與上述實施例的差異之一在於，此第二實施例的發光二極體結構100’具有一覆晶式發光二極體晶片20’，其底面直接電性接觸第一導線架11’及第二導線架12’，藉此可以減少導線的耗材成本，並減少金屬支架10與封裝體30之間因熱膨脹係數(CTE)造成熱應力而斷線的情形。Please refer to FIG. 5, which is a perspective view of a second embodiment of the structure of the light emitting diode of the present invention. One of the differences from the above embodiment is that the LED structure 100' of the second embodiment has a flip-chip LED chip 20', the bottom surface of which directly electrically contacts the first lead frame 11' and the first The two lead frames 12' can thereby reduce the consumable cost of the wires and reduce the disconnection between the metal bracket 10 and the package 30 due to thermal stress caused by thermal expansion coefficient (CTE).
請參閱圖6及圖6A，為本發明之發光二極體結構第三實施例的立體圖，及沿著圖6中AA線的剖視圖。本實施例與上述實施例的差異在於，封裝體30”包括一不透明的基部32”及一透明的透光部34”。不透明基部32”的材料可為一白色塑料，其包覆相同於上述二個實施例的第一導線架11及第二導線架12，由於基部32”呈不透明，因此圖6未顯示上述的盲孔結構。如圖6A所示，第一盲孔115係由不透明的基部32”所包覆，可增加第一導線架11和基部32”的結合性。另外，透光部34”的材料可為一矽膠(silicone)。6 and FIG. 6A are perspective views of a third embodiment of the structure of the light emitting diode of the present invention, and a cross-sectional view taken along line AA of FIG. 6. The difference between this embodiment and the above embodiment is that the package body 30" includes an opaque base portion 32" and a transparent transparent portion 34". The material of the opaque base portion 32" may be a white plastic, and the cladding is the same as the above. In the first lead frame 11 and the second lead frame 12 of the two embodiments, since the base portion 32" is opaque, the blind hole structure described above is not shown in Fig. 6. As shown in Fig. 6A, the first blind hole 115 is opaque. The base portion 32" is coated to increase the bonding of the first lead frame 11 and the base portion 32. In addition, the material of the light transmitting portion 34" may be a silicone.
本實施例的基部32”形成一環狀的反射面322以及一穿過該電性絕緣區G的凸肋324。更具體的說，該凸肋324穿過局部的該三段式結構，並且突出於第一導線架11及第二導線架12的頂面，剖面狀形成如同鉚釘的形狀。值得注意的是，高於第一導線架11和第二導線架12頂面的凸肋結構可為一梯形結構，此梯形結構如同塞子般塞在電性絕緣區G的上方，有助於阻擋水氣入侵晶片20區域，提高此發光二極體結構100”的信賴性。上述環狀的反射面322有助於發光二極體晶片20之光線的聚集；此外，此種結構不僅形成更佳的防水結構，並且更加強該封裝體30”與第一導線架11及第二導線架12之間的結合力。然而，本實施例的凸肋324不限於上述形狀，例如凸肋324也可以是平整而未突出於第一導線架11及第二導線架12的頂面。The base portion 32" of the present embodiment forms an annular reflecting surface 322 and a rib 324 passing through the electrically insulating region G. More specifically, the rib 324 passes through the partial three-segment structure, and The top surface of the first lead frame 11 and the second lead frame 12 are protruded and formed in a shape like a rivet. It is noted that the rib structure higher than the top surface of the first lead frame 11 and the second lead frame 12 may be As a trapezoidal structure, the trapezoidal structure is plugged over the electrically insulating region G like a plug, which helps to block the intrusion of moisture into the region of the wafer 20, thereby improving the reliability of the LED structure 100". The above-mentioned annular reflecting surface 322 contributes to the accumulation of light of the LED substrate 20; moreover, this structure not only forms a better waterproof structure, but also strengthens the package 30" and the first lead frame 11 and The bonding force between the two lead frames 12. However, the rib 324 of the embodiment is not limited to the above shape, for example, the rib 324 may be flat without protruding from the top surface of the first lead frame 11 and the second lead frame 12. .
請參考圖7及圖8，為本發明之發光二極體結構第四實施例的立體圖。相較於第一實施例，此實施例簡化地突顯本發明的特徵。金屬支架10a具有凸型的第一導線架11a及凹型的第二導線架12a，以加強封裝體30與金屬支架10a之間的結合力。其中第一導線架11a朝向該第二導線架12a的邊緣局部地突出該凸出部110。此外，第一導線架11a的頂面具有兩個第一盲孔115，其座落在透光部34的內徑輪廓，以加強與封裝體30之間的結合力。類似於第一實施例，該金屬支架10a的外緣底面向內凹陷形成一全周的階梯結構112、122；該第一導線架11a及該第二導線架12a靠近該電性絕緣區G的底面邊緣各凹陷形成一下凹槽116、126。和第一實施例相比，此發光二極體結構簡化了第二盲孔(即座落在金屬支架邊緣的半圓形盲孔)、第三盲孔(即位於連接部兩側的半圓形的盲孔)，及如圖4A的多段式結構，可簡化蝕刻製程。這裡，僅示意用透明的封裝材料封裝金屬支架10a，但不以此限。也可同第三實施例，封裝體30可包含不透光的基部和透明的透光部等。Please refer to FIG. 7 and FIG. 8 , which are perspective views of a fourth embodiment of the structure of the light emitting diode of the present invention. This embodiment simplifies highlighting features of the present invention as compared to the first embodiment. The metal bracket 10a has a convex first lead frame 11a and a concave second lead frame 12a to reinforce the bonding force between the package 30 and the metal bracket 10a. The first lead frame 11a partially protrudes the protruding portion 110 toward the edge of the second lead frame 12a. Further, the top surface of the first lead frame 11a has two first blind holes 115 which are seated on the inner diameter profile of the light transmitting portion 34 to reinforce the bonding force with the package body 30. Similar to the first embodiment, the outer edge of the metal bracket 10a is recessed inwardly to form a full-circumferential stepped structure 112, 122; the first lead frame 11a and the second lead frame 12a are adjacent to the electrically insulating region G. Each of the bottom edges is recessed to form a recess 116, 126. Compared with the first embodiment, the LED structure simplifies the second blind hole (ie, a semi-circular blind hole seated on the edge of the metal bracket) and the third blind hole (ie, a semicircle on both sides of the connecting portion) The blind via), and the multi-segment structure of Figure 4A, simplifies the etching process. Here, it is only illustrated that the metal holder 10a is encapsulated with a transparent encapsulating material, but is not limited thereto. Also in the third embodiment, the package 30 may include a light-impermeable base, a transparent light-transmitting portion, and the like.
請參考圖9及圖10，為本發明之發光二極體結構第五實施例的立體圖。相較於第一實施例，此實施例的金屬支架10b具有凸型的第一導線架11b及第二導線架12b，兩個導線架11b及12b的形狀相對稱，且形成呈工字型的電性絕緣區G。或者說，電性絕緣區G的兩端略呈Y形狀，此設計的優點在於Y型區可增加塑料面積且避免剪力破壞。由於第一導線架11b及第二導線架12b面積相當，不僅更容易打線發光二極體晶片20於金屬支架10b上；此外，此種金屬支架10b更適合於覆晶型的發光二極體晶片20。每一導線架的頂面各具有一較大的第一盲孔115b、125b及一對的圓形的盲孔117b及127b座落在金屬支架10b的直角轉角處。此實施例除了具有第一實施例的優點，此外，封裝體30可以平衡地結合於第一導線架11b及第二導線架12b，不論是頂面或底面。這裡，封裝體30僅示意用透明的封裝材料封裝金屬支架10a，但不以此限。也可同第三實施例，封裝體30可包含不透光的基部和透明的透光部等。Please refer to FIG. 9 and FIG. 10, which are perspective views of a fifth embodiment of the structure of the light emitting diode of the present invention. Compared with the first embodiment, the metal bracket 10b of this embodiment has a convex first lead frame 11b and a second lead frame 12b. The two lead frames 11b and 12b are symmetrical in shape and formed in an I-shape. Electrical insulation zone G. In other words, the two ends of the electrically insulating region G are slightly Y-shaped. The advantage of this design is that the Y-shaped region can increase the plastic area and avoid shear damage. Since the first lead frame 11b and the second lead frame 12b have the same area, it is not only easier to wire the LED body 20 on the metal holder 10b; in addition, the metal holder 10b is more suitable for the flip-chip type LED chip. 20. Each of the lead frames has a larger first blind hole 115b, 125b and a pair of circular blind holes 117b and 127b seated at right angles of the metal bracket 10b. In addition to the advantages of the first embodiment, the embodiment 30 can be balancedly coupled to the first lead frame 11b and the second lead frame 12b, whether it is a top surface or a bottom surface. Here, the package 30 is only intended to encapsulate the metal holder 10a with a transparent encapsulating material, but is not limited thereto. Also in the third embodiment, the package 30 may include a light-impermeable base, a transparent light-transmitting portion, and the like.
本實施例的第一導線架11b及第二導線架12b底部各具有一焊墊118b、128b，兩焊墊118b、128b的形狀也是相對稱，其優點為可平均分佈焊錫，達到熱平衡狀態。The bottoms of the first lead frame 11b and the second lead frame 12b of the present embodiment each have a pad 118b, 128b. The shapes of the two pads 118b and 128b are also symmetrical. The advantage is that the solder can be evenly distributed to achieve a thermal equilibrium state.
請參考圖11及圖12，為本發明之發光二極體結構第六實施例的立體圖。此實施例的金屬支架10c具有凸型的第一導線架11c及凹型的第二導線架12c，第一導線架11c突出的凸出部110c較平緩。每一導線架11c、12c的頂面各具有二個呈彎弧形、以及一對圓形的盲孔117c及127c座落在金屬支架10c的直角轉角處。該些第一盲孔115c、125c對稱地分佈於透光部34的內徑輪廓且環繞著發光二極體晶片20，藉此以增加封裝體30和金屬支架10c的結合性。Please refer to FIG. 11 and FIG. 12, which are perspective views of a sixth embodiment of the structure of the light emitting diode of the present invention. The metal bracket 10c of this embodiment has a convex first lead frame 11c and a concave second lead frame 12c, and the protruding portion 110c protruding from the first lead frame 11c is relatively flat. Each of the lead frames 11c, 12c has two curved top surfaces each having a curved shape, and a pair of circular blind holes 117c and 127c are seated at right angles of the metal bracket 10c. The first blind holes 115c, 125c are symmetrically distributed on the inner diameter profile of the light transmitting portion 34 and surround the light emitting diode wafer 20, thereby increasing the bonding of the package body 30 and the metal bracket 10c.
相較於前面的實施例，第一導線架11c的面積較大於第二導線架12c，第一導線架11c的底面具有二個焊墊118，第二導線架12c具有一個焊墊128。由於第一導線架11c有兩個焊墊118，故位於兩個焊墊118間的間隙也會有封裝膠的存在，進一步增加金屬支架10c和封裝膠30的結合強度。這裡，封裝體30僅示意用透明的封裝材料封裝金屬支架10a，但不以此限。也可同第三實施例，封裝體30可包含不透光的基部和透明的透光部等。Compared with the previous embodiment, the first lead frame 11c has a larger area than the second lead frame 12c, the bottom surface of the first lead frame 11c has two pads 118, and the second lead frame 12c has a pad 128. Since the first lead frame 11c has two pads 118, the gap between the two pads 118 also has the presence of the encapsulant, which further increases the bonding strength of the metal holder 10c and the encapsulant 30. Here, the package 30 is only intended to encapsulate the metal holder 10a with a transparent encapsulating material, but is not limited thereto. Also in the third embodiment, the package 30 may include a light-impermeable base, a transparent light-transmitting portion, and the like.
金屬支架10c的底面共有三個焊墊118及128，更方便焊接並傳導餘熱至電路板。從另一面描述，該第一導線架11c及該第二導線架12c靠近電性絕緣區G的底面邊緣的下凹槽116d、126d具有平直的邊緣。換言之，金屬支架10c的底面在三個焊墊118及128之間形成二個對稱的直線凹槽，使得封裝體30與金屬支架10c底面的結合力更平衡。此外，三塊焊墊可平均分佈焊錫，達到熱平衡狀態，且其中焊墊之間更具有與塑料結合的作用力。The bottom surface of the metal bracket 10c has three pads 118 and 128, which are more convenient for soldering and conduction of residual heat to the circuit board. From the other side, the lower lead grooves 116d, 126d of the first lead frame 11c and the second lead frame 12c near the bottom edge of the electrically insulating region G have straight edges. In other words, the bottom surface of the metal bracket 10c forms two symmetrical linear grooves between the three pads 118 and 128, so that the bonding force between the package body 30 and the bottom surface of the metal bracket 10c is more balanced. In addition, the three pads can distribute the solder evenly to achieve thermal equilibrium, and the pads have a force to bond with the plastic.
請參考圖13及圖14，為本發明之發光二極體結構第七實施例的立體圖。此實施例的金屬支架10d具大體呈鑽石形的第一導線架11d及第二導線架12d。從另一面描述，兩個導線架11d、12d大體呈五邊形。與前述實施例差異點在於，位於第一導線架11d及第二導線架12d之間的電性絕緣區G穿過金屬支架10d的兩相鄰的側邊，因此本實施例的電性絕緣區G的長度都小於前述實施例。其優點在於水氣可入侵之範圍更小。Please refer to FIG. 13 and FIG. 14 , which are perspective views of a seventh embodiment of the structure of the light emitting diode of the present invention. The metal bracket 10d of this embodiment has a first lead frame 11d and a second lead frame 12d which are substantially diamond-shaped. From the other side, the two lead frames 11d, 12d are generally pentagonal. The difference from the foregoing embodiment is that the electrically insulating region G between the first lead frame 11d and the second lead frame 12d passes through two adjacent sides of the metal bracket 10d, so the electrical insulating region of the embodiment The length of G is smaller than the foregoing embodiment. The advantage is that the range of water vapor intrusion is smaller.
此外，第一盲孔115d可為一彎弧狀，且對稱性的設置在第一導線架11d且環繞著發光二極體晶片20，藉此以增加封裝體30和金屬支架10d的結合性。再者，第一導線架11d更具有三個T型貫穿孔117，第二導線架僅具有一個T型貫穿孔127，較佳位置座落在第一導線架11d和第二導線架12d的直角轉角處，用以增加封裝體30和金屬支架10d的結合性。In addition, the first blind hole 115d may be curved and symmetrically disposed on the first lead frame 11d and surrounding the light emitting diode wafer 20, thereby increasing the bonding of the package 30 and the metal bracket 10d. Furthermore, the first lead frame 11d further has three T-shaped through holes 117, and the second lead frame has only one T-shaped through hole 127, and the preferred position is located at right angles of the first lead frame 11d and the second lead frame 12d. The corner is used to increase the bonding of the package 30 and the metal bracket 10d.
還有，第一導線架11d及第二導線架12d的底面外緣具有全周的階梯結構112d、122d，及由全周的階梯結構112d、122d向內凹陷形成第三盲孔114d、124d，此實施例的第三盲孔的形狀可為一半圓形或呈狹長形，狹長型的第三盲孔分別位於金屬支架10d的四個邊緣的中間，半圓型的第三盲孔分別位於金屬支架10d之四個轉角角落的兩側。藉此可以更平衡且加強封裝體30與金屬支架10d的結合力。兩個導線架11d、12d面向電性絕緣區G的邊緣下方形成下凹槽116d、126d，各自連通於階梯結構112d、122d。本實施例中，第三盲孔的較佳位置為連接部的兩側附近，其形狀可為狹長型或半圓型，因此對稱連接部的左右側可為半圓型盲孔或狹長型盲孔的任意組合。Further, the outer edges of the bottom surface of the first lead frame 11d and the second lead frame 12d have the entire circumference of the stepped structures 112d, 122d, and the third blind holes 114d, 124d are recessed inwardly by the entire step structures 112d, 122d. The third blind hole of this embodiment may have a semicircular shape or an elongated shape, and the elongated third blind holes are respectively located in the middle of the four edges of the metal bracket 10d, and the semicircular third blind holes are respectively located on the metal bracket. The sides of the corner corners of the four corners of 10d. Thereby, the bonding force of the package 30 and the metal bracket 10d can be more balanced and strengthened. The two lead frames 11d, 12d are formed below the edge of the electrically insulating region G to form lower grooves 116d, 126d, each of which communicates with the stepped structures 112d, 122d. In this embodiment, the preferred position of the third blind hole is near the two sides of the connecting portion, and the shape thereof may be an elongated shape or a semicircular shape, so that the left and right sides of the symmetric connecting portion may be a semicircular blind hole or a narrow blind hole. random combination.
另外，由於第一導線架11d的底部具有較大的面積，可有效地傳導晶片20的熱。這裡，封裝體30僅示意用透明的封裝材料封裝金屬支架10d，但不以此限。也可同第三實施例，封裝體30可包含不透光的基部和透明的透光部等。In addition, since the bottom of the first lead frame 11d has a large area, the heat of the wafer 20 can be efficiently conducted. Here, the package 30 is only intended to encapsulate the metal holder 10d with a transparent encapsulating material, but is not limited thereto. Also in the third embodiment, the package 30 may include a light-impermeable base, a transparent light-transmitting portion, and the like.
請參閱圖15及圖16，為本發明之發光二極體結構第八實施例的立體圖。此實施例的結構類似於第三實施例，封裝體30”包括一不透明的基部32”及一透明的透光部34”。差異點在於，不透明基部32”的厚度等於金屬支架10e的厚度，亦即基部32”切齊於金屬支架10e的頂面與底面。由圖式可以看出，金屬支架10e的第一導線架11e及第二導線架12e的外形，相似於第四實施例的金屬支架。第一導線架11e的頂面具有兩個第一盲孔115，其座落在透光部34的內徑輪廓，以加強與透光部34”之間的結合力。另外，由其頂面與底面相比較，該金屬支架10e的外緣底面向內凹陷而形成全周的階梯結構112、122，該第一導線架11a及該第二導線架12a靠近該電性絕緣區G的底面邊緣各凹陷形成下凹槽116、126。本實施例與第三實施例相比，少了環狀反射面322，故可減少塑料使用並進一步降低發光二極體結構的總高度。此外，本實施例使用不透光的基部包覆金屬支架並切齊金屬支架頂面和底面，和第四實施例相比，進一步強化了封裝體和金屬支架結合的機械強度。是以，透過本發明發光二極體結構及其金屬支架結構，具有至少如下述之特點及功能：15 and FIG. 16 are perspective views of an eighth embodiment of the structure of the light emitting diode of the present invention. The structure of this embodiment is similar to that of the third embodiment, and the package body 30" includes an opaque base portion 32" and a transparent light transmitting portion 34". The difference is that the thickness of the opaque base portion 32" is equal to the thickness of the metal bracket 10e. That is, the base portion 32" is aligned with the top surface and the bottom surface of the metal bracket 10e. As can be seen from the drawing, the shape of the first lead frame 11e and the second lead frame 12e of the metal bracket 10e is similar to that of the fourth embodiment. The top surface of the first lead frame 11e has two first blind holes 115 which are seated on the inner diameter contour of the light transmitting portion 34 to reinforce the bonding force with the light transmitting portion 34". In addition, the bottom edge of the outer periphery of the metal bracket 10e is recessed to form a full-circumferential stepped structure 112, 122, and the first lead frame 11a and the second lead frame 12a are close to the electrical property. The bottom edges of the insulating regions G are each recessed to form lower recesses 116, 126. Compared with the third embodiment, this embodiment reduces the annular reflecting surface 322, so that the use of plastic can be reduced and the total height of the light emitting diode structure can be further reduced. In addition, the present embodiment coats the metal bracket with the opaque base and cuts the top and bottom surfaces of the metal bracket, and further strengthens the mechanical strength of the joint of the package and the metal bracket as compared with the fourth embodiment. Therefore, the light-emitting diode structure and the metal stent structure thereof of the present invention have at least the following features and functions:
一、藉由凸型及凹型的導線架11、12，以及第二盲孔111a、111b、121a、121b，克服因切割過程受機械剪力所造成封裝體30與導線架11、12剝離的問題。1. By the convex and concave lead frames 11, 12 and the second blind holes 111a, 111b, 121a, 121b, the problem of peeling of the package 30 and the lead frames 11 and 12 caused by mechanical shearing force during the cutting process is overcome. .
二、藉由全周的階梯結構112、122，減少切割厚度，節省刀具磨耗及毛邊的產生，進而使得尺寸更為精確，並改善吃錫良率。Second, by the step structure 112, 122 of the whole week, the cutting thickness is reduced, the tool wear and the generation of the burrs are saved, thereby making the size more precise and improving the tin yield.
三、藉由導線架的第三盲孔114、124、第一盲孔115結構、T型貫穿孔117、127，有效強化導線架與封裝體30的結合力。3. The third blind holes 114 and 124 of the lead frame, the first blind hole 115 structure, and the T-shaped through holes 117 and 127 effectively strengthen the bonding force between the lead frame and the package 30.
四、藉由多組的金屬支架10之間的連接部119、129，減少切割製程因切斷點而造成的水氣入侵問題。4. By the connection portions 119 and 129 between the plurality of sets of metal brackets 10, the water vapor intrusion problem caused by the cutting point of the cutting process is reduced.
五、透過多段式結構來強化電性絕緣區，延長水氣入侵路徑並強化導線架和膠材(或塑料)結合力。5. Strengthen the electrical insulation zone through a multi-stage structure, extend the water and gas intrusion path and strengthen the bonding force between the lead frame and the glue (or plastic).
六、選用覆晶式晶片時，可減少導線耗材成本及因不同材料的熱膨脹係數不同造成熱應力而導致斷線的問題。6. When flip chip wafers are selected, the cost of wire consumables and the thermal stress caused by different thermal expansion coefficients of different materials may be reduced.
七、本發明利用半蝕刻技術，製程更成熟，可提昇量產良率。此外，提高封裝的穩定性，增加產品可靠度和壽命。7. The invention utilizes the semi-etching technology, the process is more mature, and the mass production yield can be improved. In addition, it improves the stability of the package and increases product reliability and longevity.
惟以上所述僅為本發明之較佳可行實施例，非因此即侷限本發明之專利範圍，故舉凡運用本發明說明書及圖式內容所為之等效技術變化，均同理皆包含於本發明之範圍內，合予陳明。However, the above description is only a preferred embodiment of the present invention, and thus the scope of the present invention is not limited thereto, and the equivalent technical changes of the present specification and the contents of the drawings are all included in the present invention. Within the scope of the agreement, Chen Ming.
100、100’、100”．．．發光二極體結構100, 100', 100"... light-emitting diode structure
10、10’、10a、10b、10c、10d、10e．．．金屬支架10, 10', 10a, 10b, 10c, 10d, 10e. . . Metal bracket
11、11’、11a、11b、11c、11d、11e．．．第一導線架11, 11', 11a, 11b, 11c, 11d, 11e. . . First lead frame
12、12’、12a、12b、12c、12d、12e．．．第二導線架12, 12', 12a, 12b, 12c, 12d, 12e. . . Second lead frame
110．．．凸出部110. . . Protrusion
120．．．凹陷部120. . . Depression
111a、111b、121a、121b．．．第二盲孔111a, 111b, 121a, 121b. . . Second blind hole
112、112d、122、122d．．．階梯結構112, 112d, 122, 122d. . . Step structure
113、123．．．上凹槽113, 123. . . Upper groove
114、124、114d、124d．．．第三盲孔114, 124, 114d, 124d. . . Third blind hole
115、115b、115c、115d．．．第一盲孔115, 115b, 115c, 115d. . . First blind hole
125、125b、125c．．．第一盲孔125, 125b, 125c. . . First blind hole
116、126、116d、126d．．．下凹槽116, 126, 116d, 126d. . . Lower groove
117、127．．．貫穿孔117, 127. . . Through hole
117b、127b．．．盲孔117b, 127b. . . Blind hole
1171．．．上孔部1171. . . Upper hole
1172．．．下孔部1172. . . Lower hole
118,118b,128,128b．．．焊墊118, 118b, 128, 128b. . . Solder pad
119、129．．．連接部119, 129. . . Connection
G．．．電性絕緣區G. . . Electrical insulation zone
20、20’．．．發光二極體晶片20, 20’. . . Light-emitting diode chip
22a、22b．．．導線22a, 22b. . . wire
30、30”．．．封裝體30, 30"... package
32、32”．．．基部32, 32"... base
322．．．反射面322. . . Reflective surface
324．．．凸肋324. . . Rib
34、34”．．．透光部34, 34"...transmission department
圖1為本發明之發光二極體結構第一實施例的立體分解示意圖。1 is a perspective exploded view of a first embodiment of a light emitting diode structure of the present invention.
圖1A為本發明之金屬支架的立體圖。1A is a perspective view of a metal bracket of the present invention.
圖2為本發明之發光二極體結構的立體圖。2 is a perspective view showing the structure of a light emitting diode of the present invention.
圖3為本發明之發光二極體結構的另一立體圖。3 is another perspective view of the structure of the light emitting diode of the present invention.
圖4為本發明之發光二極體結構的俯視圖。4 is a plan view showing the structure of the light emitting diode of the present invention.
圖4A為沿著圖4中AA線的剖視圖。4A is a cross-sectional view taken along line AA of FIG. 4.
圖5為本發明之發光二極體結構第二實施例的立體圖。Fig. 5 is a perspective view showing a second embodiment of the structure of the light emitting diode of the present invention.
圖6為本發明之發光二極體結構第三實施例的立體圖。Fig. 6 is a perspective view showing a third embodiment of the structure of the light emitting diode of the present invention.
圖6A為沿著圖6中AA線的剖視圖。Fig. 6A is a cross-sectional view taken along line AA of Fig. 6.
圖7及圖8為本發明之發光二極體結構第四實施例的立體圖。7 and 8 are perspective views of a fourth embodiment of the structure of the light emitting diode of the present invention.
圖9及圖10為本發明之發光二極體結構第五實施例的立體圖。9 and 10 are perspective views of a fifth embodiment of the structure of the light emitting diode of the present invention.
圖11及圖12為本發明之發光二極體結構第六實施例的立體圖。11 and 12 are perspective views of a sixth embodiment of the structure of the light emitting diode of the present invention.
圖13及圖14為本發明之發光二極體結構第七實施例的立體圖。13 and 14 are perspective views of a seventh embodiment of the structure of the light-emitting diode of the present invention.
圖15及圖16為本發明之發光二極體結構第八實施例的立體圖。15 and 16 are perspective views of an eighth embodiment of the structure of the light emitting diode of the present invention.
100．．．發光二極體結構100. . . Light-emitting diode structure
10．．．金屬支架10. . . Metal bracket
11．．．第一導線架11. . . First lead frame
110．．．凸出部110. . . Protrusion
12．．．第二導線架12. . . Second lead frame
120．．．凹陷部120. . . Depression
G．．．電性絕緣區G. . . Electrical insulation zone
20．．．發光二極體晶片20. . . Light-emitting diode chip
30．．．封裝體30. . . Package
32．．．基部32. . . Base
34．．．透光部34. . . Translucent part
Claims (20)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101111416A TWI476966B (en) | 2012-03-30 | 2012-03-30 | Metallic frame structure and led structure having the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101111416A TWI476966B (en) | 2012-03-30 | 2012-03-30 | Metallic frame structure and led structure having the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201340421A TW201340421A (en) | 2013-10-01 |
| TWI476966B true TWI476966B (en) | 2015-03-11 |
Family
ID=49771057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101111416A TWI476966B (en) | 2012-03-30 | 2012-03-30 | Metallic frame structure and led structure having the same |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI476966B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109904147B (en) * | 2014-09-05 | 2023-04-11 | 光宝光电(常州)有限公司 | Substrate and light emitting device comprising same |
| TWI640074B (en) * | 2015-06-22 | 2018-11-01 | 順德工業股份有限公司 | Lead frame and method of manufacturing same |
| TWI650883B (en) * | 2017-03-27 | 2019-02-11 | 隆達電子股份有限公司 | Light emitting diode device and package bracket thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020066905A1 (en) * | 2000-06-20 | 2002-06-06 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
| US6576989B1 (en) * | 2000-11-28 | 2003-06-10 | National Semiconductor Corporation | Locking of mold compound to conductive substrate panels |
| US20050263861A1 (en) * | 2004-05-25 | 2005-12-01 | Stats Chippac Ltd. | Integrated circuit leadframe and fabrication method therefor |
| US20080012036A1 (en) * | 2006-07-13 | 2008-01-17 | Loh Ban P | Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices |
| US7964934B1 (en) * | 2007-05-22 | 2011-06-21 | National Semiconductor Corporation | Fuse target and method of forming the fuse target in a copper process flow |
-
2012
- 2012-03-30 TW TW101111416A patent/TWI476966B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020066905A1 (en) * | 2000-06-20 | 2002-06-06 | Bily Wang | Wing-shaped surface mount package for light emitting diodes |
| US6576989B1 (en) * | 2000-11-28 | 2003-06-10 | National Semiconductor Corporation | Locking of mold compound to conductive substrate panels |
| US20050263861A1 (en) * | 2004-05-25 | 2005-12-01 | Stats Chippac Ltd. | Integrated circuit leadframe and fabrication method therefor |
| US20080012036A1 (en) * | 2006-07-13 | 2008-01-17 | Loh Ban P | Leadframe-based packages for solid state light emitting devices and methods of forming leadframe-based packages for solid state light emitting devices |
| US7964934B1 (en) * | 2007-05-22 | 2011-06-21 | National Semiconductor Corporation | Fuse target and method of forming the fuse target in a copper process flow |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201340421A (en) | 2013-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI462251B (en) | Leadframe having a heat sink supporting part, fabricating method of the light emitting diode package using the same and light emitting diode package fabricated by the method | |
| CN103367619B (en) | Metal standoff structure and light emitting diode construction | |
| TWI476962B (en) | Light emitting device | |
| US8866166B2 (en) | Solid state lighting device | |
| JP5209881B2 (en) | Lead frame and light emitting device package using the same | |
| US9653656B2 (en) | LED packages and related methods | |
| TWI505519B (en) | Light-emitting diode light bar and the method for manufacturing the same | |
| CN103545420B (en) | Semiconductor light-emitting apparatus | |
| JP2017536700A (en) | Light emitting diode (LED) components including LED dies that are directly attached to the lead frame | |
| JP2012134531A (en) | Light emitting device | |
| US20150171282A1 (en) | Resin package and light emitting device | |
| TWI476963B (en) | A light emitting diode package | |
| TWI555227B (en) | Side view light emitting diode and method for manufacturing the same | |
| US8735933B2 (en) | Light emitting diode package and method of manufacturing the same | |
| KR100999746B1 (en) | Lighting emitting device package and fabrication method thereof | |
| TWI509848B (en) | Led package and method for manufacturing the same | |
| TWI476966B (en) | Metallic frame structure and led structure having the same | |
| TWI509834B (en) | Led package and method for manufacturing the same | |
| TW201442298A (en) | LED package and method for manufacturing the same | |
| JP7512012B2 (en) | Optical semiconductor device | |
| TWI536619B (en) | Led | |
| TWI425683B (en) | Led manufacturing method | |
| TWI415307B (en) | Method for manufacturing led package structure | |
| TW201401560A (en) | Lighting-emitting diode and method for manufacturing the same | |
| TW201438189A (en) | Light emitting device and light emitting semiconductor package substrate thereof |