TWI475198B - Light sensing circuit - Google Patents
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- TWI475198B TWI475198B TW102117232A TW102117232A TWI475198B TW I475198 B TWI475198 B TW I475198B TW 102117232 A TW102117232 A TW 102117232A TW 102117232 A TW102117232 A TW 102117232A TW I475198 B TWI475198 B TW I475198B
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本發明涉及一種光感測電路，尤其涉及一種光感測電路的光電晶體及其控制電路。The invention relates to a light sensing circuit, in particular to a photoelectric crystal of a light sensing circuit and a control circuit thereof.
第1圖為習知光感測電路示意圖，其中光感測電路100包含光電晶體910、電容20、讀出電晶體30以及讀取線40。光電晶體910的第一端電性耦接電容20，光電晶體910的閘極端設置以接收第一控制訊號G(n)，進而控制光電晶體910導通或截止。光電晶體910的第二端接收第二控制訊號S(n)，而讀出電晶體30的一端電性耦接電容20，另一端電性耦接讀取線40。1 is a schematic diagram of a conventional light sensing circuit, wherein the light sensing circuit 100 includes a photo transistor 910, a capacitor 20, a readout transistor 30, and a read line 40. The first end of the photo-crystal 910 is electrically coupled to the capacitor 20, and the gate of the photo-crystal 910 is disposed to receive the first control signal G(n), thereby controlling the photo-crystal 910 to be turned on or off. The second end of the photo-electric crystal 910 receives the second control signal S(n), and one end of the read-out transistor 30 is electrically coupled to the capacitor 20, and the other end is electrically coupled to the read line 40.
第2圖係為第1圖為習知光感測電路運作波形圖，圖中的波形係為第1圖中端點Va的電壓波形，其中包含了在環境光(弱光)下的電壓波形60_1，以及在光筆(強光)照射下的電壓波形60_2。在一個週期(Frame Time)中，光感測電路的運作包含了重置時段(rest)及感測時段(sensing)。在重置時段中，第一控制訊號G(n)導通光電晶體910，並且透過第二控制訊號S(n)重置端點Va的電壓準位。Figure 2 is a diagram showing the operation waveform of the conventional light sensing circuit. The waveform in the figure is the voltage waveform of the terminal Va in Fig. 1, which includes the voltage waveform 60_1 under ambient light (weak light). And a voltage waveform 60_2 under the illumination of a light pen (glare). In one frame time, the operation of the light sensing circuit includes a reset period and a sensing period (sensing). In the reset period, the first control signal G(n) turns on the photo-crystal 910, and resets the voltage level of the terminal Va through the second control signal S(n).
在感測時段中，透過控制第一控制訊號G(n)與第二控制訊號S(n)而截止或者將光電晶體910操作在導通程度較低的狀態。然而由於漏電流Id的關係，端點Va的電壓準位根據光電晶體910受到光照的程度而產生的 不同大小的漏電流Id，進而使得電容20的端點Va的電壓準位下降。最後，在感測時段結束後，便可以導通讀出電晶體30，進而根據端點Va的電壓準位而提供相應的輸出訊號Ro給讀取線40。通常而言，光電晶體910的漏電流Id的大小與其受到的光照程度成正相關，因此感測時段結束時，在環境光下的電壓波形60_1會高於在光筆照射下的電壓波形60_2。In the sensing period, the first control signal G(n) and the second control signal S(n) are controlled to be turned off or the photo transistor 910 is operated in a state in which the conduction degree is low. However, due to the relationship of the drain current Id, the voltage level of the terminal Va is generated according to the degree to which the photo transistor 910 is exposed to light. Different sizes of leakage current Id, in turn, cause the voltage level of the terminal Va of the capacitor 20 to drop. Finally, after the end of the sensing period, the readout transistor 30 can be turned on, and the corresponding output signal Ro is supplied to the read line 40 according to the voltage level of the terminal Va. In general, the magnitude of the leakage current Id of the photo-crystal 910 is positively correlated with the degree of illumination it receives, so that at the end of the sensing period, the voltage waveform 60_1 under ambient light will be higher than the voltage waveform 60_2 under the illumination of the stylus.
總結而言，透過端點Va在不同的光照程度下會提供不同的電壓的特性，因此便可以基於輸出訊號Ro來判斷光感測電路是否受到光筆的照射。因此，提高感測時段結束時環境光下的電壓波形60_1以及在光筆照射下的電壓波形60_2的電壓差，變成為提升感測的靈敏度的重要課題。In summary, through the terminal Va, different voltage characteristics are provided under different illumination levels, so that the light sensing circuit can be judged to be illuminated by the light pen based on the output signal Ro. Therefore, increasing the voltage difference between the voltage waveform 60_1 under the ambient light and the voltage waveform 60_2 under the illumination of the light pen at the end of the sensing period becomes an important issue for improving the sensitivity of the sensing.
本發明實施例的第一個技術方案係為一種光感測電路，包含電容、雙閘極光電晶體、讀出電晶體及控制電路。雙閘極光電晶體具有第一端、第二端、第一閘極與第二閘極，所述雙閘極光電晶體的第一端電性耦接所述電容。讀出電晶體電性耦接所述電容及讀取線，設置以根據所述電容儲存的電壓準位而提供輸出訊號至所述讀取線。控制電路電性耦接所述雙閘極光電晶體的第二閘極，設置以根據照射於所述控制電路的光強度而控制所述雙閘極光電晶體的第二閘極的電壓準位。The first technical solution of the embodiment of the present invention is a light sensing circuit, which comprises a capacitor, a double gate photoelectric crystal, a read transistor, and a control circuit. The double gate photo-electric crystal has a first end, a second end, a first gate and a second gate, and the first end of the double gate photo-electric crystal is electrically coupled to the capacitor. The read transistor is electrically coupled to the capacitor and the read line, and is configured to provide an output signal to the read line according to a voltage level stored by the capacitor. The control circuit is electrically coupled to the second gate of the dual gate photonic crystal, and is configured to control a voltage level of the second gate of the dual gate phototrans crystal according to the intensity of light irradiated to the control circuit.
本發明實施例的第二個技術方案係為一種光感測電路，包含電容、雙閘極光電晶體、讀出電晶體及控制電路。雙閘極光電晶體具有第一端、第二端、第一閘極與第二閘極。雙閘極光電晶體的第一端電性耦接所述電容，設置以響應於照射於雙閘極光電晶體的光強度、雙閘極光電晶體的第一閘極與第二端的電壓差及雙閘極光電晶體的第二閘極與第二端的 電壓差而控制流經雙閘極光電晶體的第一端及第二端的漏電流，進而改變電容儲存的電位。讀出電晶體電性耦接電容及讀取線，設置以根據電容儲存的電壓準位而提供輸出訊號至讀取線。控制電路電性耦接雙閘極光電晶體的第二閘極，設置以根據照射於控制電路的光強度而控制雙閘極光電晶體的第二閘極與第二端的電壓差。A second technical solution of the embodiment of the present invention is a light sensing circuit including a capacitor, a dual gate photo transistor, a read transistor, and a control circuit. The dual gate photo transistor has a first end, a second end, a first gate and a second gate. The first end of the dual-gate photo-electric crystal is electrically coupled to the capacitor, and is disposed in response to a light intensity of the double-gate photoelectric crystal, a voltage difference between the first gate and the second end of the double-gate photoelectric crystal, and a double The second gate of the gate photodiode and the second end The voltage difference controls the leakage current flowing through the first end and the second end of the double gate phototransistor, thereby changing the potential stored in the capacitor. The readout transistor electrically couples the capacitor and the read line, and is configured to provide an output signal to the read line according to the voltage level stored by the capacitor. The control circuit is electrically coupled to the second gate of the dual gate photonic crystal, and is configured to control a voltage difference between the second gate and the second end of the dual gate phototrans crystal according to the intensity of the light irradiated to the control circuit.
本發明實施例的第三個技術方案係為一種光感測電路，包含電容、雙閘極光電晶體、讀出電晶體及控制電路。雙閘極光電晶體具有第一端、第二端、第一閘極與第二閘極。雙閘極光電晶體的第一端電性耦接電容，設置以根據照射於雙閘極光電晶體的光強度、雙閘極光電晶體的第一閘極的電壓及雙閘極光電晶體的第二閘極電壓而控制流經雙閘極光電晶體的第一端及第二端的漏電流，進而改變電容儲存的電壓準位。讀出電晶體電性耦接電容及讀取線，設置以根據電容儲存的電壓準位而提供輸出訊號至讀取線。控制電路電性耦接雙閘極光電晶體的第二閘極，設置以根據照射於控制電路的光強度而控制雙閘極光電晶體的第二閘極的電壓，進而根據照射於控制電路的光強度而控制雙閘極光電晶體的漏電流的大小。A third technical solution of the embodiment of the present invention is a light sensing circuit including a capacitor, a double gate photoelectric crystal, a read transistor, and a control circuit. The dual gate photo transistor has a first end, a second end, a first gate and a second gate. The first end of the dual gate phototransistor is electrically coupled to the capacitor according to the intensity of the light irradiated to the double gate phototransistor, the voltage of the first gate of the double gate phototransistor, and the second of the double gate phototransistor The gate voltage controls the leakage current flowing through the first end and the second end of the double gate photo-electric crystal, thereby changing the voltage level of the capacitor storage. The readout transistor electrically couples the capacitor and the read line, and is configured to provide an output signal to the read line according to the voltage level stored by the capacitor. The control circuit is electrically coupled to the second gate of the double gate photoelectric crystal, and is configured to control the voltage of the second gate of the double gate photoelectric crystal according to the light intensity irradiated to the control circuit, and further, according to the light irradiated to the control circuit The intensity controls the amount of leakage current of the double gate phototransistor.
根據本發明第一至第三個技術方案的一種特定的實施例，其中控制電路包含光敏元件，光敏元件的第一端電性耦接雙閘極光電晶體的第二閘極，光敏元件的第二端設置以接收導通電壓，光敏元件設置以根據照射於光敏元件的光強度而決定是否提供導通電壓給雙閘極電晶體的第二閘極。According to a specific embodiment of the first to third technical solutions of the present invention, wherein the control circuit comprises a photosensitive element, the first end of the photosensitive element is electrically coupled to the second gate of the double gate photoelectric crystal, and the photosensitive element The two ends are arranged to receive a turn-on voltage, and the photosensitive element is arranged to determine whether to provide a turn-on voltage to the second gate of the double gate transistor according to the intensity of the light irradiated to the photosensitive element.
根據本發明第一至第三個技術方案的一種特定的實施例，其中控制電路包含光敏元件，光敏元件的第一端電性耦接雙閘極光電晶體的 第二閘極，光敏元件的第二端設置以接收一導通電壓，光敏元件設置以根據照射於光敏元件的光強度而控制雙閘極光電晶體的第二閘極的電壓準位。According to a specific embodiment of the first to third technical solutions of the present invention, wherein the control circuit comprises a photosensitive element, the first end of the photosensitive element is electrically coupled to the double gate photoelectric crystal The second gate, the second end of the photosensitive element is arranged to receive a conduction voltage, and the photosensitive element is arranged to control the voltage level of the second gate of the double gate photoelectric crystal according to the intensity of the light irradiated to the photosensitive element.
根據本發明第一至第三個技術方案的一種特定的實施例，其中控制電路包含第一電晶體，第一電晶體的第一端電性耦接雙閘極光電晶體的第二閘極，第一電晶體的第二端設置以接收導通電壓，第一電晶體設置以根據照射於第一電晶體的光強度而控制雙閘極光電晶體的第二閘極的電壓準位。According to a specific embodiment of the first to third technical solutions of the present invention, the control circuit includes a first transistor, and the first end of the first transistor is electrically coupled to the second gate of the double gate phototransistor, The second end of the first transistor is configured to receive a turn-on voltage, and the first transistor is configured to control a voltage level of the second gate of the dual gate photodiode according to the intensity of light that is incident on the first transistor.
在上述特定的實施例中，其中第一電晶體的第一閘極電性耦接雙閘極光電晶體的第二閘極。In the above specific embodiment, the first gate of the first transistor is electrically coupled to the second gate of the dual gate photo transistor.
根據本發明第一至第三個技術方案的一種特定的實施例，其中雙閘極光電晶體的漏電流與照射於控制電路的光強度成正相關。According to a particular embodiment of the first to third technical solutions of the present invention, the leakage current of the double gate photovoltaic crystal is positively correlated with the intensity of the light incident on the control circuit.
根據本發明第一至第三個技術方案的一種特定的實施例，其中雙閘極光電晶體第二閘極的電壓準位與照射於控制電路的光強度成正相關。According to a particular embodiment of the first to third technical solutions of the present invention, wherein the voltage level of the second gate of the dual gate phototransistor is positively correlated with the intensity of the light incident on the control circuit.
根據本發明第一至第三個技術方案的一種特定的實施例，其中雙閘極光電晶體的第一閘極設置以接收第一控制訊號，雙閘極光電晶體的第二端設置以接收的第二控制訊號，雙閘極光電晶體還設置以根據第一控制訊號而致能，進而透過雙閘極光電晶體的第二端接收的第二控制訊號而重置電容儲存的電壓準位。According to a particular embodiment of the first to third technical solutions of the present invention, wherein the first gate of the dual gate phototransistor is configured to receive the first control signal, and the second end of the dual gate phototransistor is configured to receive The second control signal is further configured to be enabled according to the first control signal to reset the voltage level of the capacitor storage through the second control signal received by the second end of the dual gate phototransistor.
根據本發明第一至第三個技術方案的一種特定的實施例，其中讀出電晶體的閘極端設置以接收第三控制訊號，以根據第三控制訊號而 導通讀出電晶體，進而根據電容儲存的電壓準位而提供輸出訊號至讀取線。A specific embodiment of the first to third technical solutions of the present invention, wherein the gate terminal of the read transistor is configured to receive the third control signal to be based on the third control signal The readout transistor is turned on, and the output signal is supplied to the read line according to the voltage level stored in the capacitor.
本發明各實施例的技術方案透過根據照射於控制電路的光 強度而控制雙閘極光電晶體的第二閘極電壓，因此使得雙閘極光電晶體在弱光環境下其漏電流僅略微的提升，而在強光的環境下，雙閘極光電晶體則明顯的增加，最終使得本發明各實施例的光感測電路能夠提供在強光與弱光環境下，差異較大的輸出訊號。The technical solution of each embodiment of the present invention transmits light according to illumination to the control circuit The second gate voltage of the double gate photo-electric crystal is controlled by the intensity, so that the leakage current of the double-gate photoelectric crystal is only slightly increased in the low-light environment, and in the environment of strong light, the double-gate photoelectric crystal is obviously The increase ultimately enables the light sensing circuits of the various embodiments of the present invention to provide output signals that differ greatly in both strong and low light environments.
10‧‧‧光電晶體10‧‧‧Photoelectric crystal
20‧‧‧電容20‧‧‧ Capacitance
30‧‧‧讀出電晶體30‧‧‧Reading the transistor
40‧‧‧讀取線40‧‧‧Reading line
50‧‧‧控制電路50‧‧‧Control circuit
60_1、60_2、70_1、70_2‧‧‧電壓波形60_1, 60_2, 70_1, 70_2‧‧‧ voltage waveforms
100、300、500、600、800‧‧‧光感測電路100, 300, 500, 600, 800‧‧‧ optical sensing circuits
111‧‧‧半導體層111‧‧‧Semiconductor layer
112‧‧‧第一端112‧‧‧ first end
113‧‧‧第二端113‧‧‧ second end
121‧‧‧第一閘極121‧‧‧First Gate
122‧‧‧第二閘極122‧‧‧second gate
510‧‧‧光敏元件510‧‧‧Photosensitive elements
520、530‧‧‧電晶體520, 530‧‧‧Optoelectronics
531‧‧‧第一閘極531‧‧‧first gate
532‧‧‧第二閘極532‧‧‧second gate
910‧‧‧光電晶體910‧‧‧Photoelectric crystal
dv1、dv2‧‧‧電壓差Dv1, dv2‧‧‧ voltage difference
Va‧‧‧端點Va‧‧ Endpoint
第1圖係為習知光感測電路示意圖；第2圖係為第1圖為習知光感測電路運作波形圖；第3圖係為本發明光感測電路第一實施例示意圖；第4圖係為習知光感測電路與本發明實施例光感測電路運作波形比較圖；第5圖係為本發明光感測電路第二實施例示意圖；第6圖係為本發明光感測電路第三實施例示意圖；第7圖係為雙閘極光電晶體實施例結構示意圖；第8圖係為本發明光感測電路第四實施例示意圖。1 is a schematic diagram of a conventional light sensing circuit; FIG. 2 is a waveform diagram of a conventional light sensing circuit; FIG. 3 is a schematic view of a first embodiment of the light sensing circuit of the present invention; FIG. 5 is a schematic diagram of a second embodiment of the optical sensing circuit of the present invention; FIG. 6 is a third embodiment of the optical sensing circuit of the present invention; FIG. 7 is a schematic structural view of an embodiment of a dual gate photocrystal; FIG. 8 is a schematic view of a fourth embodiment of the photo sensing circuit of the present invention.
在通篇說明書與申請專利範圍所使用之用詞(terms)，除有特別註明，通常具有每個用詞使用在此領域中的通常意義。在此所使用的用詞「實質上(substantially)」、「大約(around)」、「約(about)」或「近乎(approximately)」應大體上意味在給定值或範圍的20%以內，較佳係在10% 以內。此外，若使用「電(性)耦接」或「電(性)連接」一詞在此係包含直接及間接的電氣連接手段。相同的，若使用「耦接」或「連接」一詞在此係包含直接及間接的連接或耦接手段。The terms used throughout the specification and patent application, unless otherwise noted, generally have the usual meaning of each term used in the art. The terms "substantially", "around", "about" or "approximately" as used herein shall generally mean within 20% of a given value or range, Preferably at 10% Within. In addition, the term "electrical coupling" or "electrical connection" is used herein to include both direct and indirect electrical connections. In the same way, the use of the terms "coupled" or "connected" is used in this context to include both direct and indirect connection or coupling means.
除此之外，在通篇說明書與申請專利範圍中，若有類似「根據參數A而影響結果B的的描述」，無特別註明時，參數A可以僅為影響結果B的多個參數其中之一或者參數A可以是影響結果B的唯一參數。在通篇說明書與申請專利範圍中，若使用「設置以/用以執行某功能」來形容一元件，並非指該元件僅具有所述的功能，換言之，所述的功能可能僅為該元件的多個功能之一。In addition, in the scope of the general specification and the patent application, if there is a description similar to "the influence of the result B according to the parameter A", the parameter A may only be a plurality of parameters affecting the result B unless otherwise specified. One or parameter A can be the only parameter that affects result B. In the context of the specification and the patent application, the use of "set to / to perform a function" to describe an element does not mean that the element has only the described function. In other words, the function may be only the element. One of several features.
下文依本發明特舉實施例配合所附圖式作詳細說明，但所提供之實施例並非設置以限制本發明所涵蓋的範圍。The invention is described in detail below with reference to the accompanying drawings, which are not intended to limit the scope of the invention.
第3圖係為本發明光感測電路第一實施例示意圖。光感測電路300包含電容20、雙閘極光電晶體10、讀出電晶體30及控制電路50。雙閘極光電晶體10具有第一端112、第二端113、第一閘極121與第二閘極122。雙閘極光電晶體10的第一端112電性耦接電容20，設置以根據照射於雙閘極光電晶體10的光強度、雙閘極光電晶體的第一閘極121與第二端113的電壓差及雙閘極光電晶體的第二閘極122與第二端113的電壓差而控制流經雙閘極光電晶體10第一端112及第二端113的漏電流，進而改變電容20儲存的電壓準位。Figure 3 is a schematic view of a first embodiment of the light sensing circuit of the present invention. The light sensing circuit 300 includes a capacitor 20, a dual gate photo transistor 10, a readout transistor 30, and a control circuit 50. The dual gate phototransistor 10 has a first end 112, a second end 113, a first gate 121 and a second gate 122. The first end 112 of the dual gate photo-electric crystal 10 is electrically coupled to the capacitor 20, and is disposed according to the light intensity of the double-gate photo-crystal 10, the first gate 121 and the second end 113 of the double-gate photoelectric crystal. The voltage difference and the voltage difference between the second gate 122 and the second terminal 113 of the double gate phototransistor control the leakage current flowing through the first end 112 and the second end 113 of the double gate phototransistor 10, thereby changing the capacitance 20 to be stored. Voltage level.
讀出電晶體30電性耦接電容20及讀取線40，設置以根據電容20儲存的電壓準位而提供輸出訊號Ro至讀取線40。控制電路50電性耦接雙閘極光電晶體10的第二閘極122，設置以根據照射於控制電路50的光強度而 控制雙閘極光電晶體10的第二閘極122與第二端113的電壓差。電容20的一端電性耦接雙閘極光電晶體10的第一端112，另一端可以接收一定電壓，例如可以接地。The read transistor 30 is electrically coupled to the capacitor 20 and the read line 40, and is configured to provide an output signal Ro to the read line 40 according to the voltage level stored by the capacitor 20. The control circuit 50 is electrically coupled to the second gate 122 of the dual gate phototransistor 10, and is disposed to be based on the intensity of light that is incident on the control circuit 50. The voltage difference between the second gate 122 and the second terminal 113 of the dual gate phototransistor 10 is controlled. One end of the capacitor 20 is electrically coupled to the first end 112 of the dual gate phototransistor 10, and the other end can receive a certain voltage, for example, can be grounded.
舉例而言，控制電路50具有光敏元件510，光敏元件510的一端電性耦接雙閘極光電晶體10的第二閘極122，光敏元件510的另一端設置以接收導通電壓Von。光敏元件510設置以根據照射在光敏元件510的光強度，進而決定光敏元件510導通或斷開，或者根據照射在光敏元件510的光強度，進而決定光敏元件510導通程度。更具體的說，當照射在光敏元件510的光強度高於一預定的值，則光敏元件510便會導通，進而將光敏元件510另一端所接收的導通電壓Von提供給雙閘極光電晶體10的第二閘極122，因此，便能夠增加雙閘極光電晶體10的漏電流。For example, the control circuit 50 has a photosensitive element 510. One end of the photosensitive element 510 is electrically coupled to the second gate 122 of the dual gate phototransistor 10. The other end of the photosensitive element 510 is disposed to receive the turn-on voltage Von. The photosensitive member 510 is disposed to determine whether the photosensitive member 510 is turned on or off according to the intensity of light irradiated to the photosensitive member 510, or depending on the intensity of light irradiated to the photosensitive member 510, thereby determining the degree of conduction of the photosensitive member 510. More specifically, when the light intensity irradiated to the photosensitive member 510 is higher than a predetermined value, the photosensitive member 510 is turned on, and the on-voltage Von received at the other end of the photosensitive member 510 is supplied to the double gate photovoltaic crystal 10. The second gate 122, therefore, can increase the leakage current of the dual gate photo transistor 10.
除此之外，光感測電路300的雙閘極光電晶體10的第一閘極121設置以接收第一控制訊號G(n)，進而控制雙閘極光電晶體10導通或截止。而雙閘極光電晶體10的第二閘極122則電性耦接控制電路50，雙閘極光電晶體10的第二端113接收第二控制訊號S(n)；而讀出電晶體30的一端電性耦接電容20，另一端電性耦接讀取線40。In addition, the first gate 121 of the dual gate phototransistor 10 of the photo sensing circuit 300 is arranged to receive the first control signal G(n), thereby controlling the dual gate phototransistor 10 to be turned on or off. The second gate 122 of the dual gate photo transistor 10 is electrically coupled to the control circuit 50. The second terminal 113 of the dual gate photo transistor 10 receives the second control signal S(n); and the readout transistor 30 One end is electrically coupled to the capacitor 20 and the other end is electrically coupled to the read line 40.
第4圖為習知光感測電路與本發明實施例光感測電路運作波形比較圖，電壓波形60_1、60_2、70_1及70_2分別為習知光感測電路在環境光下的電壓波形、習知光感測電路在光筆照射下的電壓波形、本發明實施例光感測電路在環境光下的電壓波形及本發明實施例光感測電路在光筆照射下的電壓波形，且上述各波形為端點Va的電壓波形。4 is a comparison diagram of the operation waveforms of the conventional light sensing circuit and the light sensing circuit of the embodiment of the present invention. The voltage waveforms 60_1, 60_2, 70_1, and 70_2 are respectively voltage waveforms of the conventional light sensing circuit under ambient light, and the conventional light sensing circuit is The voltage waveform of the light pen illumination, the voltage waveform of the light sensing circuit of the embodiment of the present invention under ambient light, and the voltage waveform of the light sensing circuit of the embodiment of the present invention under the illumination of the light pen, and the waveforms of the above waveforms are the voltage waveform of the end point Va. .
光感測電路300的運作方式與光感測電路100類似，在一個週 期(Frame Time)中，光感測電路的運作包含了重置時段(rest)及感測時段(sensing)。在重置時段中，第一控制訊號G(n)導通雙閘極光電晶體10，並且透過第二控制訊號S(n)重置端點Va的電壓準位。在感測時段中，透過控制第一控制訊號G(n)與第二控制訊號S(n)而截止或者將光電晶體10操作在導通程度較低的狀態。然而由於漏電流的關係，端點Va的電壓準位根據雙閘極光電晶體10受到光照的程度而產生的不同大小的漏電流，進而使得端點Va的電壓準位下降而產生不同的電壓準位。最後，在感測時段結束後，便可以導通讀出電晶體30，進而根據端點Va的電壓準位而提供相應的輸出訊號Ro給讀取線40。通常而言，光電晶體10的漏電流的大小與其受到的光照程度成正相關，因此感測時段結束時，在環境光下的電壓波形70_1會高於在光筆照射下的電壓波形70_2。The light sensing circuit 300 operates in a similar manner to the light sensing circuit 100, in one week. In the Frame Time, the operation of the light sensing circuit includes a reset period (rest) and a sensing period (sensing). In the reset period, the first control signal G(n) turns on the dual gate phototransistor 10, and resets the voltage level of the terminal Va through the second control signal S(n). In the sensing period, the first control signal G(n) and the second control signal S(n) are controlled to be turned off or the photo-crystal 10 is operated in a state in which the conduction degree is low. However, due to the leakage current, the voltage level of the terminal Va is different according to the degree of illumination of the double gate photo-electric crystal 10, and the voltage level of the terminal Va is lowered to generate different voltage levels. Bit. Finally, after the end of the sensing period, the readout transistor 30 can be turned on, and the corresponding output signal Ro is supplied to the read line 40 according to the voltage level of the terminal Va. In general, the magnitude of the leakage current of the photo-crystal 10 is positively correlated with the degree of illumination it receives, so that at the end of the sensing period, the voltage waveform 70_1 under ambient light will be higher than the voltage waveform 70_2 under the illumination of the stylus.
第4圖中由於雙閘極光電晶體10具有雙閘極，其在感測時段時，於環境光(低光源)的照射下，控制電路50響應於低光源而控制第二閘極122的電壓為較低的電壓準位，或者是直接將第二閘極122設置於浮接的狀態，因此雙閘極光電晶體10的漏電流僅會略大於習之光感測電路100的漏電流。是故光感測電路300在環境光的照射下，提供的輸出訊號Ro僅會略低於光感測電路100在環境光的照射下提供的輸出訊號Ro。In Fig. 4, since the double gate photo-electric crystal 10 has a double gate, the control circuit 50 controls the voltage of the second gate 122 in response to the low light source under illumination of ambient light (low light source) during the sensing period. The lower the voltage level, or the second gate 122 is directly placed in the floating state, so the leakage current of the double gate photo-electric crystal 10 is only slightly larger than the leakage current of the light sensing circuit 100. Therefore, the output signal Ro provided by the light sensing circuit 300 under ambient light is only slightly lower than the output signal Ro provided by the light sensing circuit 100 under the illumination of ambient light.
然而到了強光照射(例如光筆照射)的情況下，控制電路50響應於強光源而控制第二閘極122的電壓為較高的電壓準位，或者是將導通電壓Von提供給雙閘極光電晶體10的第二閘極122。因此雙閘極光電晶體10的漏電流會遠遠的增大。相較於習知的光感測電路100，在強光照射(例如光筆照射)的情況下，光感測電路300的漏電流會遠遠大於光感測電路100的漏電 流，是故光感測電路300在強光照射(例如光筆照射)的照射下，提供的輸出訊號Ro會遠低於光感測電路100在強光照射(例如光筆照射)的照射下提供的輸出訊號Ro。However, in the case of strong light illumination (for example, light pen illumination), the control circuit 50 controls the voltage of the second gate 122 to a higher voltage level in response to a strong light source, or provides the on-voltage Von to the double gate photoelectric The second gate 122 of the crystal 10. Therefore, the leakage current of the double gate photo transistor 10 is far greater. Compared with the conventional light sensing circuit 100, in the case of strong light irradiation (for example, light pen irradiation), the leakage current of the light sensing circuit 300 is much larger than the leakage current of the light sensing circuit 100. The flow is such that the output signal Ro provided by the light sensing circuit 300 under intense light illumination (for example, light pen illumination) is much lower than that provided by the light sensing circuit 100 under illumination of strong light (for example, light pen illumination). Output signal Ro.
第4圖中電壓差dv1係為習知光感測電路100在強光(如光筆)與弱光(如環境光)照射下，感測時段結束時端點Va的電壓差，電壓差dv2係為光感測電路300在強光(如光筆)與弱光(如環境光)照射下，感測時段結束時端點Va的電壓差。可以明顯的發現電壓差dv2大於電壓差dv1，此外由於輸出訊號Ro又是對應於感測時段結束時端點Va的電壓，光感測電路300提供的輸出訊號Ro在強光與弱光照射下的差異會大於習知光感測電路100。總結而言，光感測電路300相較於習知光感測電路100，更能夠分辨強光與弱光照射的不同。The voltage difference dv1 in FIG. 4 is the voltage difference of the terminal Va at the end of the sensing period of the conventional light sensing circuit 100 under the illumination of strong light (such as a light pen) and low light (such as ambient light), and the voltage difference dv2 is light. The sensing circuit 300 senses the voltage difference of the end point Va at the end of the sensing period under illumination of strong light (such as a light pen) and low light (such as ambient light). It can be clearly found that the voltage difference dv2 is greater than the voltage difference dv1, and since the output signal Ro is corresponding to the voltage of the terminal Va at the end of the sensing period, the output signal Ro provided by the light sensing circuit 300 is illuminated by strong light and low light. The difference will be greater than the conventional light sensing circuit 100. In summary, the light sensing circuit 300 is more capable of distinguishing the difference between strong light and low light illumination than the conventional light sensing circuit 100.
第5圖係為本發明光感測電路第二實施例示意圖。光感測電路500亦包含電容20、雙閘極光電晶體10、讀出電晶體30及控制電路50。而且雙閘極光電晶體10具有第一端112、第二端113、第一閘極121與第二閘極122，雙閘極光電晶體10的第一端112電性耦接電容20，設置以根據照射於雙閘極光電晶體10的光強度、雙閘極光電晶體的第一閘極121與第二端113的電壓差及雙閘極光電晶體的第二閘極122與第二端113的電壓差而控制流經雙閘極光電晶體10第一端112及第二端113的漏電流，進而改變電容20儲存的電壓準位。Figure 5 is a schematic view showing a second embodiment of the light sensing circuit of the present invention. The light sensing circuit 500 also includes a capacitor 20, a dual gate photo transistor 10, a readout transistor 30, and a control circuit 50. The double-gate photo-electric crystal 10 has a first end 112, a second end 113, a first gate 121 and a second gate 122. The first end 112 of the dual-gate photo-electric crystal 10 is electrically coupled to the capacitor 20, and is disposed. According to the light intensity irradiated to the double gate photo-electric crystal 10, the voltage difference between the first gate 121 and the second end 113 of the double gate photo-electric crystal, and the second gate 122 and the second end 113 of the double-gate photoelectric crystal The leakage current of the first terminal 112 and the second terminal 113 of the double gate phototransistor 10 is controlled by the voltage difference, thereby changing the voltage level stored by the capacitor 20.
讀出電晶體30電性耦接電容20及讀取線40，設置以根據電容20儲存的電壓準位而提供輸出訊號Ro至讀取線40。控制電路50電性耦接雙閘極光電晶體10的第二閘極122，設置以根據照射於控制電路50的光強度而 控制雙閘極光電晶體10的第二閘極122與第二端113的電壓差。除此之外，光感測電路500的作動與光感測電路300亦大致相同，其運作的波形請一併參考第4圖與第5圖，在此不另外贅述。The read transistor 30 is electrically coupled to the capacitor 20 and the read line 40, and is configured to provide an output signal Ro to the read line 40 according to the voltage level stored by the capacitor 20. The control circuit 50 is electrically coupled to the second gate 122 of the dual gate phototransistor 10, and is disposed to be based on the intensity of light that is incident on the control circuit 50. The voltage difference between the second gate 122 and the second terminal 113 of the dual gate phototransistor 10 is controlled. In addition, the operation of the light sensing circuit 500 is substantially the same as that of the light sensing circuit 300. For the waveform of the operation, please refer to FIG. 4 and FIG. 5 together, and no further details are provided herein.
與第3圖的光感測電路300不同的是，光感測電路500的控制電路50包含電晶體520，電晶體520的一端電性耦接雙閘極光電晶體10的第二閘極122，電晶體520的另一端設置以接收導通電壓Von。電晶體520設置以根據照射在電晶體520的光強度，進而決定電晶體520導通或斷開，或者根據照射在電晶體520的光強度，進而決定電晶體520導通程度或者漏電流的大小。更具體的說，當照射在電晶體520的光強度越高，電晶體520的漏電流便會越大，雙閘極光電晶體10的第二閘極122的電壓準位便會越接近導通電壓Von，而雙閘極光電晶體10的第二閘極122越接近導通電壓Von，雙閘極光電晶體10的漏電流便會越大。The control circuit 50 of the light sensing circuit 500 includes a transistor 520. One end of the transistor 520 is electrically coupled to the second gate 122 of the dual gate photo transistor 10, The other end of the transistor 520 is disposed to receive the turn-on voltage Von. The transistor 520 is disposed to determine whether the transistor 520 is turned on or off according to the intensity of light applied to the transistor 520, or to determine the degree of conduction or leakage current of the transistor 520 according to the intensity of light applied to the transistor 520. More specifically, the higher the light intensity irradiated on the transistor 520, the larger the leakage current of the transistor 520, and the closer the voltage level of the second gate 122 of the double gate phototransistor 10 is to the turn-on voltage. Von, and the closer the second gate 122 of the double gate phototransistor 10 is to the turn-on voltage Von, the larger the leakage current of the double gate photo transistor 10.
由於雙閘極光電晶體10的第二閘極122的電壓準位隨著光照強度而改變，隨著光照強度的調整，雙閘極光電晶體10的漏電流亦隨著呈正相關的變化，且其變化更甚於習知的光感測電路100。如第4圖所示，光感測電路500亦如光感測電路300，光感測電路500提供的輸出訊號Ro在強光與弱光照射下的差異會大於習知光感測電路100。總結而言，光感測電路500相較於習知光感測電路100，更能夠分辨強光與弱光照射的不同。Since the voltage level of the second gate 122 of the double gate phototransistor 10 changes with the illumination intensity, the leakage current of the double gate phototransistor 10 changes with a positive correlation as the illumination intensity is adjusted, and The change is more than the conventional light sensing circuit 100. As shown in FIG. 4, the light sensing circuit 500 is also like the light sensing circuit 300. The output signal Ro provided by the light sensing circuit 500 is greater than that of the conventional light sensing circuit 100 under the illumination of strong light and low light. In summary, the light sensing circuit 500 is more capable of distinguishing the difference between strong light and low light illumination than the conventional light sensing circuit 100.
第6圖係為本發明光感測電路第三實施例示意圖。光感測電路600亦包含電容20、雙閘極光電晶體10、讀出電晶體30及控制電路50。而且雙閘極光電晶體10具有第一端112、第二端113、第一閘極121與第二閘極122，雙閘極光電晶體10的第一端112電性耦接電容20，設置以根據照射於 雙閘極光電晶體10的光強度、雙閘極光電晶體的第一閘極121與第二端113的電壓差及雙閘極光電晶體的第二閘極122與第二端113的電壓差而控制流經雙閘極光電晶體10第一端112及第二端113的漏電流，進而改變電容20儲存的電壓準位。讀出電晶體30，電性耦接電容20及讀取線40，設置以根據電容20儲存的電壓準位而提供輸出訊號Ro至讀取線40。Figure 6 is a schematic view showing a third embodiment of the light sensing circuit of the present invention. The light sensing circuit 600 also includes a capacitor 20, a dual gate photo transistor 10, a readout transistor 30, and a control circuit 50. The double-gate photo-electric crystal 10 has a first end 112, a second end 113, a first gate 121 and a second gate 122. The first end 112 of the dual-gate photo-electric crystal 10 is electrically coupled to the capacitor 20, and is disposed. According to the illumination The light intensity of the double gate phototransistor 10, the voltage difference between the first gate 121 and the second end 113 of the double gate phototransistor, and the voltage difference between the second gate 122 and the second terminal 113 of the dual gate photodiode The leakage current flowing through the first end 112 and the second end 113 of the double gate photo-electric crystal 10 is controlled to change the voltage level stored by the capacitor 20. The read transistor 30 is electrically coupled to the capacitor 20 and the read line 40 and is arranged to provide an output signal Ro to the read line 40 according to the voltage level stored by the capacitor 20.
控制電路50電性耦接雙閘極光電晶體10的第二閘極122，設置以根據照射於控制電路50的光強度而控制雙閘極光電晶體10的第二閘極122與第二端113的電壓差。除此之外，光感測電路600的作動與光感測電路300及光感測電路500亦大致相同，其運作的波形請一併參考第4圖與第6圖，在此不另外贅述。The control circuit 50 is electrically coupled to the second gate 122 of the dual gate phototransistor 10, and is configured to control the second gate 122 and the second end 113 of the dual gate phototransistor 10 according to the intensity of the light irradiated to the control circuit 50. The voltage difference. In addition, the operation of the light sensing circuit 600 is substantially the same as that of the light sensing circuit 300 and the light sensing circuit 500. For the waveform of the operation, please refer to FIG. 4 and FIG. 6 together, and no further details are provided herein.
與第5圖的光感測電路500不同的是，光感測電路600的控制電路50包含電晶體530，電晶體530的一端電性耦接雙閘極光電晶體10的第二閘極122，電晶體530的另一端設置以接收導通電壓Von。此外，電晶體530的第一閘極531電性耦接雙閘極光電晶體10的第二閘極122，電晶體530還可以更具有第二閘極532，第二閘極532可以例如為接地。The control circuit 50 of the photo-sensing circuit 600 includes a transistor 530. One end of the transistor 530 is electrically coupled to the second gate 122 of the dual-gate photo-electric crystal 10, The other end of the transistor 530 is disposed to receive the turn-on voltage Von. In addition, the first gate 531 of the transistor 530 is electrically coupled to the second gate 122 of the dual gate phototransistor 10. The transistor 530 may further have a second gate 532. The second gate 532 may be grounded, for example. .
電晶體530設置以根據照射在電晶體530的光強度，進而決定電晶體530導通或斷開，或者根據照射在電晶體530的光強度，進而決定電晶體530導通程度或者漏電流的大小。更具體的說，當照射在電晶體530的光強度越高，電晶體530的漏電流便會越大，雙閘極光電晶體10的第二閘極122的電壓準位便會越接近導通電壓Von，雙閘極光電晶體10的第二閘極122越接近導通電壓Von，雙閘極光電晶體10的漏電流便會越大。The transistor 530 is arranged to determine whether the transistor 530 is turned on or off according to the intensity of the light irradiated on the transistor 530, or depending on the intensity of the light irradiated on the transistor 530, thereby determining the degree of conduction of the transistor 530 or the magnitude of the leakage current. More specifically, the higher the light intensity irradiated on the transistor 530, the larger the leakage current of the transistor 530, and the closer the voltage level of the second gate 122 of the double gate phototransistor 10 is to the turn-on voltage. Von, the closer the second gate 122 of the double gate phototransistor 10 is to the turn-on voltage Von, the larger the leakage current of the double gate photo transistor 10.
除此之外，當雙閘極光電晶體10的第二閘極122電壓準位越 接近導通電壓Von，由於電晶體530的第一閘極531電性耦接雙閘極光電晶體10的第二閘極122，當雙閘極光電晶體10的第二閘極122越接近導通電壓Von，電晶體530的第一閘極531的電壓準位亦越接近導通電壓Von。隨著電晶體530的第一閘極531的電壓準位越接近導通電壓Von，便會改變電晶體530的工作區間，使得電晶體530的漏電流增加。簡言之，透過將電晶體530的第一閘極531電性耦接雙閘極光電晶體10的第二閘極122，電晶體530根據被光照射強度而產生正向漏電流改變的現象，會相較於電晶體520而更加明顯。In addition, when the voltage of the second gate 122 of the double gate phototransistor 10 is higher, As the first gate 531 of the transistor 530 is electrically coupled to the second gate 122 of the dual gate phototransistor 10, the second gate 122 of the dual gate phototransistor 10 is closer to the turn-on voltage Von. The voltage level of the first gate 531 of the transistor 530 is also closer to the turn-on voltage Von. As the voltage level of the first gate 531 of the transistor 530 approaches the on-voltage Von, the operating interval of the transistor 530 is changed, so that the leakage current of the transistor 530 is increased. In short, by electrically coupling the first gate 531 of the transistor 530 to the second gate 122 of the double gate phototransistor 10, the transistor 530 changes the forward leakage current according to the intensity of the light irradiation. This will be more pronounced than the transistor 520.
由於雙閘極光電晶體10的第二閘極122的電壓準位隨著光照強度而改變，隨著光照強度的調整，雙閘極光電晶體10的漏電流亦隨著呈正相關的變化，且其變化更甚於習知的光感測電路100。如第4圖所示，光感測電路600亦如光感測電路500，光感測電路600提供的輸出訊號Ro在強光與弱光照射下的差異會大於習知光感測電路100。總結而言，光感測電路500相較於習知光感測電路100，更能夠分辨強光與弱光照射的不同。Since the voltage level of the second gate 122 of the double gate phototransistor 10 changes with the illumination intensity, the leakage current of the double gate phototransistor 10 changes with a positive correlation as the illumination intensity is adjusted, and The change is more than the conventional light sensing circuit 100. As shown in FIG. 4, the light sensing circuit 600 is also like the light sensing circuit 500. The output signal Ro provided by the light sensing circuit 600 is greater than that of the conventional light sensing circuit 100 under the illumination of strong light and low light. In summary, the light sensing circuit 500 is more capable of distinguishing the difference between strong light and low light illumination than the conventional light sensing circuit 100.
此外，由於透過將電晶體530的第一閘極531電性耦接雙閘極光電晶體10的第二閘極122，電晶體530根據被光照射強度而產生正向漏電流改變的現象，會相較於電晶體520而更加明顯。因此雙閘極光電晶體10的第二閘極122的電壓準位隨著光照強度而改變的現象相較於光感測電路500亦更明顯，所以光感測電路600相較於光感測電路500，可以具有更好的感測效果。In addition, since the first gate 531 of the transistor 530 is electrically coupled to the second gate 122 of the double gate photo-electric crystal 10, the transistor 530 changes the forward leakage current according to the intensity of the light irradiation. It is more pronounced than the transistor 520. Therefore, the phenomenon that the voltage level of the second gate 122 of the double gate phototransistor 10 changes with the light intensity is more obvious than that of the light sensing circuit 500, so the light sensing circuit 600 is compared with the light sensing circuit. 500, can have a better sensing effect.
第7圖係為雙閘極光電晶體實施例結構示意圖。雙閘極光電晶體10適用於光感測電路300、500、600、800，但亦僅為雙閘極光電晶體 10一種實施示例。本領域的技術人員應該能夠理解還有其他的雙閘極光電晶體10的實施方式，舉例而言，透過四道光罩製造技術或者超視角高清晰技術(Advanced Hyper-Viewing Angle,AHVA)來製作。雙閘極光電晶體10包含第一閘極(如上閘極)121、第二閘極(如下閘極)122、半導體層111、第一端112及第二端113。半導體層111夾於第一閘極121與第二閘極122之間，第一閘極121與第二閘極122能夠分別控制半導體層111行成的通道，進而控制第一端112及第二端113之間的電流路徑。Figure 7 is a schematic view showing the structure of a double gate photovoltaic crystal embodiment. The dual gate photonic crystal 10 is suitable for the light sensing circuits 300, 500, 600, 800, but is also only a double gate photonic crystal 10 An example of implementation. Those skilled in the art will appreciate that there are other embodiments of the dual gate photovoltaic crystal 10, for example, fabricated by four reticle fabrication techniques or Advanced Hyper-Viewing Angle (AHVA). The dual gate phototransistor 10 includes a first gate (such as a gate) 121, a second gate (such as a gate) 122, a semiconductor layer 111, a first end 112, and a second end 113. The semiconductor layer 111 is sandwiched between the first gate 121 and the second gate 122. The first gate 121 and the second gate 122 can respectively control the channels formed by the semiconductor layer 111, thereby controlling the first end 112 and the second. The current path between terminals 113.
第8圖係為本發明光感測電路第四實施例示意圖。與光感測電路800與光感測電路300、500、600不同的是雙閘極光電晶體10的第二閘極122直接接收導通電壓Von。因此不管在強光或者弱光照射的情況下，雙閘極光電晶體10的漏電流都會遠大於習知的光感測電路100。是故光感測電路300、500、600相較於光感測電路800，光感測電路300、500、600提供的輸出訊號Ro在強光與弱光照射下的差異會大於光感測電路800。Figure 8 is a schematic view showing a fourth embodiment of the light sensing circuit of the present invention. Unlike the light sensing circuit 800 and the light sensing circuits 300, 500, 600, the second gate 122 of the dual gate photo transistor 10 directly receives the turn-on voltage Von. Therefore, the leakage current of the double gate photo-electric crystal 10 is much larger than that of the conventional photo-sensing circuit 100 regardless of whether it is illuminated by strong light or low light. Therefore, the light sensing circuits 300, 500, and 600 are compared with the light sensing circuit 800, and the output signal Ro provided by the light sensing circuits 300, 500, and 600 is greater than that of the light sensing circuit under the illumination of strong light and low light. 800.
總結而言，本發明各實施例透過控制電路50根據照射於控制電路50的光強度而控制雙閘極光電晶體10的第二閘極122電壓，因此使得雙閘極光電晶體10在弱光環境下其漏電流僅略微的提升，而在強光的環境下，雙閘極光電晶體10則明顯的增加，最終使得本發明各實施例的光感測電路能夠提供在強光與弱光環境下差異較大的輸出訊號。In summary, embodiments of the present invention control the voltage of the second gate 122 of the dual gate phototransistor 10 through the control circuit 50 according to the intensity of the light that is incident on the control circuit 50, thus causing the dual gate photodiode 10 to be in a low light environment. Under the bright light environment, the double gate photo-electric crystal 10 is obviously increased, and finally the light sensing circuit of the embodiments of the present invention can be provided under the conditions of strong light and low light. Large difference output signal.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
10‧‧‧光電晶體10‧‧‧Photoelectric crystal
20‧‧‧電容20‧‧‧ Capacitance
30‧‧‧讀出電晶體30‧‧‧Reading the transistor
40‧‧‧讀取線40‧‧‧Reading line
50‧‧‧控制電路50‧‧‧Control circuit
300‧‧‧光感測電路300‧‧‧Light sensing circuit
112‧‧‧第一端112‧‧‧ first end
113‧‧‧第二端113‧‧‧ second end
121‧‧‧第一閘極121‧‧‧First Gate
122‧‧‧第二閘極122‧‧‧second gate
510‧‧‧光敏元件510‧‧‧Photosensitive elements
Va‧‧‧端點Va‧‧ Endpoint
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| CN103762251B (en) * | 2014-01-22 | 2016-03-30 | 中山大学 | A kind of bigrid photo tft, image element circuit and pel array |
| TWI539344B (en) * | 2014-07-21 | 2016-06-21 | 友達光電股份有限公司 | Optical sensor circuit |
| TWI587699B (en) * | 2015-06-02 | 2017-06-11 | 國立中山大學 | Light sensing circuit and control method thereof |
| CN105573000B (en) | 2016-03-25 | 2019-05-03 | 京东方科技集团股份有限公司 | TFT and production method, array substrate, display panel and driving method, display device |
| CN108519151B (en) * | 2018-03-23 | 2020-05-05 | 京东方科技集团股份有限公司 | Photodetection circuit, photodetection method, and photodetection device |
| CN109768055B (en) * | 2019-01-23 | 2022-06-10 | 京东方科技集团股份有限公司 | Photosensitive device, preparation method thereof, display substrate and light intensity detection method |
| TWI699516B (en) * | 2019-07-31 | 2020-07-21 | 友達光電股份有限公司 | Optical sensing circuit and method for determining light color by using the same |
| TWI738422B (en) * | 2020-07-16 | 2021-09-01 | 友達光電股份有限公司 | Pixel circuit for touch sensing and optical sensing |
| CN114171542B (en) * | 2021-12-06 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | Display panel and mobile terminal |
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