TWI472416B - Cutting wire provided with fixed abrasive grains each including a core coated with a hard and abrasive film - Google Patents
Cutting wire provided with fixed abrasive grains each including a core coated with a hard and abrasive film Download PDFInfo
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本發明係有關於一種具有硬質薄膜之固定磨粒電鍍切割線，其磨粒使用金屬或合金粒子鍍上鑽石薄膜或氮化硼薄膜，以電鍍或無電鍍方式將磨粒鍍於切割基材上，作為切割線具。The invention relates to a fixed abrasive grain electroplating cutting line with a hard film, wherein the abrasive grains are plated with a diamond film or a boron nitride film using metal or alloy particles, and the abrasive grains are plated on the cutting substrate by electroplating or electroless plating. As a cutting line.
近年來光電等產業興起，矽晶圓、藍寶石、瑪瑙等貴重硬脆材料需求日益增加，其中矽晶圓為積體電路(IC)發展所不可或缺之材料，其製作過程需經晶圓切割製程，切割晶圓常造成材料損耗，切割(wafer slicing)所需成本比重相當高，因此業者極需良好晶圓切割技術。In recent years, the optoelectronics and other industries have emerged, and the demand for precious hard and brittle materials such as wafers, sapphires, and agates is increasing. Among them, germanium wafers are indispensable materials for the development of integrated circuits (ICs), and the fabrication process requires wafer cutting. Processes, cutting wafers often result in material loss, and the cost of wafer slicing is quite high, so the industry is in desperate need of good wafer cutting technology.
使用線鋸切割晶圓是其中一種方法，線鋸切割依使用磨料形式，可分游離磨料(free-abrasive)和固定磨粒(fix-abrasive)。游離磨粒線是以鋼線帶動磨漿對材料進行加工，但其切割效率低、切割精密度低及廢棄磨漿易造成環境污染；固定磨料線是透過結合劑或利用電鍍、無電電鍍法將耐磨磨粒固定於鋼線材表面，其切割效率，與切割精密度高，同時克服磨漿處理問題。因此，於工業上為提高加工效率，現今多採固定磨粒切割線。One of the methods of cutting a wafer using a wire saw is to use a free-abrasive and a fixed-abrasive. The free abrasive wire is processed by steel wire to refine the material, but its cutting efficiency is low, the cutting precision is low, and the waste grinding is easy to cause environmental pollution; the fixed abrasive wire is through the bonding agent or by electroplating or electroless plating. The wear-resistant abrasive particles are fixed on the surface of the steel wire, and the cutting efficiency and cutting precision are high, and the problem of refining treatment is overcome. Therefore, in order to improve the processing efficiency in the industry, a fixed abrasive grain cutting line is frequently used today.
固定磨粒切割線之一般採用超硬的磨粒粒子(高硬度CBN氮化硼或鑽石結構的磨粒粒子)，以電鍍或樹脂結合劑於線材工具上。利用合成樹脂結合將超硬磨粒固定於線材的方式比透過電鍍方式易磨損，磨粒更易脫落，針對此問題通過電鍍方式將磨粒固定於線材切割線具雖比合成樹脂結合方式具有耐磨損，但製程時間較長。近年來為了提高電鍍切割線製程速度， 提出在超硬磨粒表面鍍上Ti、Ni、Cu等金屬覆蓋，但相對造成在電鍍過程產生磨粒粒子堆疊，不只導致多餘的磨粒容易脫落，造成磨粒的浪費外也縮短切割線具使用壽命，因此美國專利(U.S.Patent：Electrodeposited Wire Tool)電鍍切割線工具專利以控制鍍在超硬磨粒上金屬覆蓋厚度在0.1μ m以下(最好為減至0.05μ m)或控制覆蓋金屬質量小於磨粒粒子質量的10%(小於5%最佳)方式避免改質後磨粒粒子導電性太好，減少電鍍過程產生堆疊，進而提高電鍍速度達到1公尺/分鐘以上。但由於所製作線具之磨粒粒子為鑽石，在價格上昂貴且大小粒徑不均勻，加上鑽石粒子形狀無法控制，因此在切割線具上切割晶圓或藍寶石等切割損失(KerfLoss)較大、較易出現V形凹痕。其他專利則有使用鑽石粒子與金屬一起熔融形成磨粒粒子，但在形狀上還是無法控制，成本也未降低，電鍍上還是容易產生堆疊現象。The fixed abrasive cutting line generally uses super-hard abrasive particles (high hardness CBN boron nitride or diamond-structured abrasive particles) to electroplate or resin bond on the wire tool. The method of fixing the super-hard abrasive grains to the wire by using the synthetic resin is easier to wear than the electroplating method, and the abrasive grains are more likely to fall off. For this problem, the abrasive grains are fixed to the wire cutting wire by electroplating, although the synthetic resin is combined with the wear resistance. Damage, but the process time is longer. In recent years, in order to improve the processing speed of electroplating and cutting lines, it is proposed to coat the surface of super-hard abrasive grains with Ti, Ni, Cu, etc., but relatively cause the accumulation of abrasive particles in the electroplating process, which not only causes the excess abrasive grains to fall off easily, resulting in The waste of abrasive grains also shortens the service life of the cutting wire. Therefore, the US Patent (Electrodeposited Wire Tool) electroplating cutting line tool patent controls the thickness of the metal coating on the super-hard abrasive particles to be less than 0.1 μm (preferably minus). Up to 0.05 μm ) or the control cover metal mass is less than 10% (less than 5% of the best) of the mass of the abrasive particles. The method avoids the conductivity of the abrasive particles after the modification is too good, reduces the stacking process, and increases the plating speed to 1 Meters per minute or more. However, since the abrasive particles of the manufactured wire are diamonds, which are expensive in price and uneven in size and particle size, and the shape of the diamond particles cannot be controlled, the cutting loss of the wafer or sapphire on the cutting wire is relatively high (KerfLoss). Large, more prone to V-shaped indentations. Other patents use diamond particles to melt together with the metal to form abrasive particles, but the shape is still uncontrollable, the cost is not reduced, and the stacking phenomenon is easy to occur on the plating.
鑽石膜從20世紀80年代初開始，一直受到世界各國的廣泛重視，並曾於20世紀80年代中葉至90年代末形成了一個全球範圍的研究熱潮。一般鑽石膜應用於光學與真空微電子器件、聲表面波器件(SAW)、抗輻射電子器件。鑽石薄膜專利大多著重於在製備鑽石膜與設備上，在使用工具只有在拋光研磨工具與鑽石膜銑刀、焊接工具、拉絲模芯、鑽石膜砂輪修整條、高精度鑽石膜軸承支架等工具上，如：德國CemeCon公司建立CCDia生產線，但一般使用鑽石當為固定磨粒，除了本身鑽石粒子價格昂貴外，需再進一步進行鑽石粒子表面改質，鍍上一層金屬層，可提高電鍍製程速度。而鑽石粒子本身形狀與大小不易控制，在使用上需進一步進行篩選，才能控制粒徑大 小較為一致，不止浪費成本也無法控制均一性的形狀。Since the early 1980s, diamond film has been widely recognized by countries all over the world, and it has formed a global research boom in the mid-1980s to the end of the 1990s. Generally, diamond films are used in optical and vacuum microelectronic devices, surface acoustic wave devices (SAW), and radiation resistant electronic devices. Most of the diamond film patents focus on the preparation of diamond films and equipment. Only tools such as polishing tools and diamond film milling cutters, welding tools, wire drawing cores, diamond film wheel dressings, high-precision diamond film bearing brackets, etc. are used. For example, the German CemeCon company establishes the CCDia production line, but generally uses diamond as a fixed abrasive grain. In addition to the expensive diamond particles itself, it is necessary to further modify the surface of the diamond particles and plate a metal layer to improve the plating process speed. The shape and size of the diamond particles themselves are not easy to control, and further screening is required in use to control the particle size. Smaller and more consistent, not only wastes costs but also controls the shape of uniformity.
因此，本發明開發具有硬質薄膜之固定磨粒電鍍切割線，磨粒使用鍍有鑽石薄膜之金屬或合金粒子，使磨粒具有高耐磨鑽石結構又具有導電性金屬結構，再以電鍍方式將此磨粒鍍在所需的切割線基材上，當為切割線具。Therefore, the present invention develops a fixed abrasive grain electroplating cutting line with a hard film, which uses a metal or alloy particle coated with a diamond film, so that the abrasive grain has a high wear-resistant diamond structure and a conductive metal structure, and then electroplated This abrasive grain is plated on the desired cutting line substrate as a cutting wire.
本發明之主要目的係在於，不只可降低鑽石磨粒成本，另外磨粒粒子之形狀與大小在製作上容易控制，同時可達到減少磨粒堆疊、增加製程速度以及提高磨粒與線基材的結合強度。The main object of the present invention is to not only reduce the cost of diamond abrasive grains, but also to control the shape and size of the abrasive particles in the production, and at the same time, to reduce the abrasive grain stacking, increase the processing speed, and improve the abrasive grains and the wire substrate. Bond strength.
為了達到上述目的，本發明具有硬質薄膜之固定磨粒電鍍切割線，係以電鍍方式於切割線基材上固定鑲嵌有多數磨粒，而各磨粒係分別包含有磨粒粒子、及一鍍於磨粒粒子外側面之硬質薄膜，而該磨粒粒子平均粒徑為1~60μ m，可選自Ti金屬或Ti合金粒子，該硬質薄膜材質為膜厚為1~40μ m之鑽石薄膜，且該硬質薄膜鍍在磨粒粒子的面積為30~90%。In order to achieve the above object, the present invention has a fixed abrasive grain plating cutting line of a hard film, which is fixedly embedded with a plurality of abrasive grains on a cutting line substrate by electroplating, and each abrasive grain system respectively contains abrasive particles and a plating plate. a hard film on the outer side surface of the abrasive particles, wherein the abrasive particles have an average particle diameter of 1 to 60 μm , and may be selected from Ti metal or Ti alloy particles, and the hard film material is a diamond having a film thickness of 1 to 40 μm . The film is formed, and the hard film is plated on the surface of the abrasive particles in an amount of 30 to 90%.
於本發明之一實施例中，該磨粒粒子與硬質薄膜表面間係形成TiC，而該TiC厚度為0.05~0.5μm。In one embodiment of the present invention, TiC is formed between the abrasive particles and the surface of the hard film, and the TiC has a thickness of 0.05 to 0.5 μm.
於本發明之一實施例中，該Ti金屬材質可為Si、Ta、Mo、W、Cr、V、Cu、Al、Fe。In an embodiment of the invention, the Ti metal material may be Si, Ta, Mo, W, Cr, V, Cu, Al, Fe.
於本發明之一實施例中，該Ti合金材質可為Si、Ta、Mo、W、Cr、V、Cu、Al、Fe等之金屬合金。In an embodiment of the present invention, the Ti alloy material may be a metal alloy of Si, Ta, Mo, W, Cr, V, Cu, Al, Fe, or the like.
於本發明之一實施例中，該磨粒粒子可為圓球狀、金字塔狀、四面體、六面體、八面體等形狀。In an embodiment of the invention, the abrasive particles may be in the shape of a sphere, a pyramid, a tetrahedron, a hexahedron, an octahedron or the like.
於本發明之一實施例中，該鑽石薄膜材質可為氮化硼、氧 化鋁。。In an embodiment of the invention, the diamond film material may be boron nitride or oxygen. Aluminum. .
於本發明之一實施例中，該金屬或合金粒子可為粗糙表面或多孔性高表面粒子。In an embodiment of the invention, the metal or alloy particles may be rough surfaces or porous high surface particles.
於本發明之一實施例中，該切割線基材係選用線徑1.6mm之琴鋼絲，且經過脫脂、活化與水洗後，先以電鍍方式先在切割線基材鍍上一層約10μm之Ni層，之後再將磨粒電鍍於切割線基材上。In an embodiment of the present invention, the cutting wire substrate is selected from a piano wire having a wire diameter of 1.6 mm, and after degreasing, activation and water washing, firstly plating a layer of about 10 μm on the cutting wire substrate by electroplating. The layer is then electroplated onto the cutting line substrate.
請參閱『第1圖~第7圖』，係分別為本發明之磨粒示意圖、本發明切割線之製備機台示意圖、本發明切割線基材鍍上預鍍層之示意圖、本發明切割線基材鍍上磨粒之示意圖、本發明切割線具之示意圖、本發明切割線具之剖面狀態示意圖以及本發明第6圖a部分之局部放大示意圖。如圖所示：本發明係一種具有硬質薄膜之固定磨粒電鍍切割線，係以電鍍方式於切割線基材10上固定鑲嵌有多數磨粒20，而各磨粒20係分別包含有磨粒粒子21、及一鍍於磨粒粒子21外側面之硬質薄膜22；而製作時，係先選用多數平均粒徑為1~60μ m(以15~25μm為最佳)之磨粒粒子21，而該磨粒粒子22可選自Ti金屬或Ti合金粒子，將該磨粒粒子21先經過鹼洗除油和酸洗活化去除表面附著物之後，以化學氣相沈積法(CVD)在磨粒粒子21表面鍍上硬質薄膜22，而該硬質薄膜22材質係為膜厚為1~40μ m(以10~15μm為最佳)之鑽石薄膜，該鑽石薄膜材質可為氮化硼、氧化鋁，且該硬質薄膜22鍍在磨粒粒子的面積為30~90%，將鍍有硬質薄膜22之磨粒粒子21 在真空度10-1 ~10-4 Pa之真空爐中加熱，而加熱溫度大於800~1000℃，待時間20分鐘後，便使該磨粒粒子21與硬質薄膜22表面間係形成TiC，而該TiC厚度為0.05~0.5μm(以0.2~0.4μm為最佳)，如此，即可製成所需之磨粒20；其中該磨粒粒子21可為圓球狀、金字塔狀、四面體、六面體、八面體等形狀，且該金屬或合金粒子可為粗糙表面或多孔性高表面粒子，其中該Ti金屬材質可為Si、Ta、Mo、W、Cr、V、Cu、Al、Fe，該Ti合金材質可為Si、Ta、Mo、W、Cr、V、Cu、Al、Fe等之金屬合金。Please refer to FIG. 1 to FIG. 7 , which are schematic diagrams of the abrasive grains of the present invention, a schematic diagram of a preparation machine for the cutting line of the present invention, a schematic diagram of plating a pre-plated layer on the cutting wire substrate of the present invention, and a cutting line base of the present invention. A schematic view of the abrasive grains coated on the material, a schematic view of the cutting wire of the present invention, a schematic sectional view of the cutting wire of the present invention, and a partially enlarged schematic view of a portion of the sixth drawing of the present invention. As shown in the figure: the present invention is a fixed abrasive grain plating cutting line having a hard film, which is fixedly embedded with a plurality of abrasive grains 20 on a cutting line substrate 10 by electroplating, and each of the abrasive grains 20 includes abrasive grains. The particles 21 and a hard film 22 plated on the outer side surface of the abrasive particles 21 are formed by using a plurality of abrasive particles 21 having an average particle diameter of 1 to 60 μm (preferably 15 to 25 μm). The abrasive particles 22 may be selected from Ti metal or Ti alloy particles, and the abrasive particles 21 are first subjected to alkali washing and acid washing to remove surface deposits, and then subjected to chemical vapor deposition (CVD) on the abrasive grains. The surface of the particle 21 is plated with a hard film 22, and the material of the hard film 22 is a diamond film having a film thickness of 1 to 40 μm (optimally 10 to 15 μm), and the diamond film material may be boron nitride or aluminum oxide. And the hard film 22 is plated on the surface of the abrasive particles by 30 to 90%, and the abrasive particles 21 coated with the hard film 22 are heated in a vacuum furnace having a vacuum degree of 10 -1 to 10 -4 Pa, and the heating temperature is obtained. More than 800~1000 ° C, after 20 minutes, the Ti particles are formed between the abrasive particles 21 and the surface of the hard film 22, and the Ti The thickness of C is 0.05-0.5 μm (preferably 0.2-0.4 μm), so that the desired abrasive grains 20 can be formed; wherein the abrasive particles 21 can be spherical, pyramidal, tetrahedral, and six. a shape of a face, an octahedron, or the like, and the metal or alloy particles may be a rough surface or a porous high surface particle, wherein the Ti metal material may be Si, Ta, Mo, W, Cr, V, Cu, Al, Fe. The Ti alloy material may be a metal alloy of Si, Ta, Mo, W, Cr, V, Cu, Al, Fe or the like.
待完成磨粒20製造後，再藉由一具有清洗槽31、預鍍槽32、上磨粒槽33及增厚度槽34之機台30(如第2圖所示)，配合線徑1.6mrn琴鋼絲作為切割線基材10，而將切割線基材10由清洗槽31脫脂、活化與水洗後，由預鍍槽32以電鍍方式先在切割線基材10鍍上一層約10μm之Ni作為預鍍層11(如第3圖所示)，之後再將已備製完成之磨粒20利用上磨粒槽33將磨粒粒子21電鍍在切割線基材10上(如第4圖所示)，之後再次增度10μm之Ni作為增厚層12，最後經過熱處理溫度為200~250℃之2小時退火處理，而得到一線徑約2.1~2.3mm切割線具切割線1(如第5、6及第7圖所示)，而該電切割線具1係可依所需製成不同的直徑和長度，且該切割線具1係可裝設於不同之設備上形成不同之加工方式，如：往復循環(鋸架)式、高速帶鋸式、線切割式…等。After the completion of the abrasive grain 20, a machine table 30 (shown in FIG. 2) having a cleaning tank 31, a pre-plating tank 32, an upper abrasive grain tank 33 and a thickening tank 34 is used, and the wire diameter is 1.6 mrn. The piano wire is used as the cutting wire substrate 10, and after the cutting wire substrate 10 is degreased, activated and washed by the cleaning tank 31, a layer of about 10 μm of Ni is first plated on the cutting line substrate 10 by electroplating from the pre-plating groove 32. The pre-plated layer 11 (as shown in Fig. 3), and then the prepared abrasive grains 20 are electroplated onto the dicing substrate 10 by the upper abrasive granules 33 (as shown in Fig. 4). Then, Ni is further increased by 10 μm as the thickening layer 12, and finally annealed at a heat treatment temperature of 200 to 250 ° C for 2 hours to obtain a cutting line 1 having a wire diameter of about 2.1 to 2.3 mm (eg, 5, 6). And Figure 7), and the electric cutting wire 1 can be made into different diameters and lengths according to requirements, and the cutting wire 1 can be installed on different equipment to form different processing methods, such as : Reciprocating cycle (saw frame) type, high speed band saw type, wire cutting type, etc.
而根據本發明所提出之切割線具1，係將習用之鑽石磨粒改使用金屬或合金之磨粒粒子21鍍上一層為鑽石薄膜材質 之硬質薄膜22，不只可降低鑽石磨粒成本，另外金屬或合金之磨粒粒子21其形狀與大小在製作上容易控制；同時，因金屬或合金本身具有良好的導電性，在表面鍍上鑽石薄膜或氮化硼薄膜當為切割或磨耗結構，相對造成鍍有薄膜位置與未鍍薄膜位置間具有差異性的導電性，在電鍍過程，已結合在線基材上的磨粒也會因表面鍍有鑽石薄膜或氮化硼薄膜，在進行通電電鍍時相對於陰極金屬線基材，磨粒鑽石薄膜或氮化硼薄膜表面只有極小電流通過，所以可有效減少磨粒沈積堆疊，並同時可提高電鍍製程速度。According to the cutting tool 1 of the present invention, the conventional diamond abrasive grain is changed to a metal or alloy abrasive particle 21 to be coated with a diamond film material. The hard film 22 not only reduces the cost of diamond abrasive grains, but also the shape and size of the abrasive particles 21 of the metal or alloy are easy to control in production; at the same time, the metal or the alloy itself has good electrical conductivity and is coated with diamonds on the surface. When the film or boron nitride film is a cutting or wearing structure, it has a difference in conductivity between the film-coated position and the uncoated film position. In the electroplating process, the abrasive grains bonded to the wire substrate are also plated on the surface. There is a diamond film or a boron nitride film, and only a very small current flows through the surface of the abrasive diamond film or the boron nitride film during electroplating, so that the abrasive deposition stack can be effectively reduced and at the same time improved Electroplating process speed.
上述之實施例僅為例示性說明本發明之特點及其功效，而非用於限制本發明之實質技術內容的範圍。任何熟習此技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修飾與變化。因此，本發明之權利保護範圍，應如後述之申請專利範圍所列。The above-described embodiments are merely illustrative of the features and functions of the present invention and are not intended to limit the scope of the technical scope of the present invention. Modifications and variations of the above-described embodiments can be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the scope of the claims described below.
1‧‧‧切割線具1‧‧‧ cutting line
10‧‧‧切割線基材10‧‧‧ Cutting line substrate
11‧‧‧預鍍層11‧‧‧Pre-plated
12‧‧‧增厚層12‧‧‧ Thickening layer
20‧‧‧磨粒20‧‧‧ abrasive grain
21‧‧‧磨粒粒子21‧‧‧ abrasive particles
22‧‧‧硬質薄膜22‧‧‧hard film
30‧‧‧機台30‧‧‧ machine
31‧‧‧清洗槽31‧‧‧cleaning tank
32‧‧‧預鍍槽32‧‧‧Preplating tank
33‧‧‧上磨粒槽33‧‧‧Upper grinding groove
34‧‧‧增厚度槽34‧‧‧ Thickening groove
第1圖，係為本發明之磨粒示意圖。Fig. 1 is a schematic view of the abrasive grains of the present invention.
第2圖，係為本發明切割線之製備機台示意圖。Figure 2 is a schematic view of the preparation machine for the cutting line of the present invention.
第3圖，係為本發明切割線基材鍍上預鍍層之示意圖。Figure 3 is a schematic view showing the plating of the cutting line substrate of the present invention.
第4圖，係為本發明切割線基材鍍上磨粒之示意圖。Fig. 4 is a schematic view showing the abrasive grain of the cutting wire substrate of the present invention.
第5圖，係為本發明切割線具之示意圖。Figure 5 is a schematic view of the cutting wire of the present invention.
第6圖，係為本發明切割線具之剖面狀態示意圖。。Figure 6 is a schematic view showing the cross-sectional state of the cutting wire of the present invention. .
第7圖，係為本發明第6圖a部分之局部放大示意圖。Fig. 7 is a partially enlarged schematic view showing a portion of Fig. 6a of the present invention.
1‧‧‧切割線具1‧‧‧ cutting line
10‧‧‧切割線基材10‧‧‧ Cutting line substrate
11‧‧‧預鍍層11‧‧‧Pre-plated
12‧‧‧增厚層12‧‧‧ Thickening layer
20‧‧‧磨粒20‧‧‧ abrasive grain
21‧‧‧磨粒粒子21‧‧‧ abrasive particles
22‧‧‧硬質薄膜22‧‧‧hard film
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100132488A TWI472416B (en) | 2011-09-08 | 2011-09-08 | Cutting wire provided with fixed abrasive grains each including a core coated with a hard and abrasive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100132488A TWI472416B (en) | 2011-09-08 | 2011-09-08 | Cutting wire provided with fixed abrasive grains each including a core coated with a hard and abrasive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201311413A TW201311413A (en) | 2013-03-16 |
| TWI472416B true TWI472416B (en) | 2015-02-11 |
Family
ID=48482292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100132488A TWI472416B (en) | 2011-09-08 | 2011-09-08 | Cutting wire provided with fixed abrasive grains each including a core coated with a hard and abrasive film |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI472416B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332663A (en) * | 1998-03-11 | 2002-01-23 | 诺顿公司 | Superabrasive wire saw and method for making the saw |
| CN101090804A (en) * | 2005-12-27 | 2007-12-19 | 日本精细钢铁株式会社 | Fixed abrasive wire |
| CN101596749A (en) * | 2009-06-26 | 2009-12-09 | 江苏中博钻石科技有限公司 | The preparation method of brazed diamond wire saw |
| CN101998894A (en) * | 2008-04-11 | 2011-03-30 | 联合材料公司 | Electrodeposited wire tool and method of producing same |
-
2011
- 2011-09-08 TW TW100132488A patent/TWI472416B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1332663A (en) * | 1998-03-11 | 2002-01-23 | 诺顿公司 | Superabrasive wire saw and method for making the saw |
| CN101090804A (en) * | 2005-12-27 | 2007-12-19 | 日本精细钢铁株式会社 | Fixed abrasive wire |
| CN101998894A (en) * | 2008-04-11 | 2011-03-30 | 联合材料公司 | Electrodeposited wire tool and method of producing same |
| CN101596749A (en) * | 2009-06-26 | 2009-12-09 | 江苏中博钻石科技有限公司 | The preparation method of brazed diamond wire saw |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201311413A (en) | 2013-03-16 |
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