TWI470105B - Gas Reaction Continuous Cavity and Gas Reaction - Google Patents
Gas Reaction Continuous Cavity and Gas Reaction Download PDFInfo
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本發明係與用以進行氣體反應(例如硒化反應)之裝置有關，特別是關於一種氣體反應連續腔及氣體反應方法。The present invention relates to a device for performing a gas reaction (e.g., a selenization reaction), and more particularly to a gas reaction continuous chamber and a gas reaction method.
在半導體製程中，時常包含有進行氣體反應之步驟，例如CIGS(Copper Indium Gallium Selenide)太陽能電池中的銅銦鎵硒玻璃板，其玻璃基板濺鍍銅、銦、鎵、硒等材料後，需加熱至能使硒產生氣體反應(亦即硒化反應)之溫度，以於玻璃基板上合成出CIGS半導體薄膜。In the semiconductor process, there are often steps for performing a gas reaction, such as a copper indium gallium selenide glass plate in a CIGS (Copper Indium Gallium Selenide) solar cell, after the glass substrate is sputtered with materials such as copper, indium, gallium, and selenium. Heating to a temperature at which selenium can generate a gas reaction (i.e., selenization reaction) to synthesize a CIGS semiconductor film on a glass substrate.
習知進行氣體反應的方式，係將已鍍有反應材料之基板設置於一呈真空狀態或設有特定氣體(例如氮氣)之封閉腔室內，且該腔室內設有加熱器(例如紅外線加熱器)，然後，先將基板溫度從室溫升高到氣體反應所需之溫度(例如硒化反應需達攝氏500~550度)，且升溫速度不可過快以免基板破裂，氣體反應完成之後，需先將基板逐漸降溫到攝氏200度以下，才能將基板自該腔室取出，以避免基板因與室溫的溫差過大而破裂。The conventional method for performing a gas reaction is to place a substrate coated with a reaction material in a closed chamber in a vacuum state or in a specific gas (for example, nitrogen), and a heater (for example, an infrared heater) is disposed in the chamber. Then, first increase the substrate temperature from room temperature to the temperature required for the gas reaction (for example, the selenization reaction needs to reach 500-550 degrees Celsius), and the heating rate should not be too fast to avoid the substrate rupture. After the gas reaction is completed, it is required. The substrate is gradually cooled down to 200 degrees Celsius to remove the substrate from the chamber to prevent the substrate from rupturing due to excessive temperature difference from room temperature.
然而，前述之過程相當費時，而且，該腔室內必須依序完成加熱、反應及冷卻之步驟後，才能再對另一基板重複進行同樣的過程，因此其效率不佳而仍有待改進。However, the foregoing process is quite time consuming, and the steps of heating, reacting, and cooling must be sequentially performed in the chamber before the same process can be repeated for another substrate, so that the efficiency is not good and still needs to be improved.
有鑑於上述缺失，本發明之主要目的在於提供一種氣體反應連續腔，以及一種使用該氣體反應連續腔之氣體反應方法，可對受反應物進行加熱、氣體反應及冷卻之步驟，且具有良好之效率。In view of the above-mentioned deficiencies, the main object of the present invention is to provide a gas reaction continuous chamber, and a gas reaction method using the gas reaction continuous chamber, which can perform steps of heating, gas reaction and cooling of the reactant, and has good effectiveness.
為達成上述目的，本發明所提供之氣體反應連續腔包含有至少三腔室、至少四隔離裝置以及一位於該等腔室及該等隔離裝置內之輸送裝置，各該腔室係位於二該隔離裝置之間，藉以使該等腔室能呈氣密狀 態。該輸送裝置具有一前端、一後端以及能供該隔離裝置穿過之至少四空隙，該輸送裝置係用以設置一受反應物，並帶動該受反應物朝向該前端移動進而通過該等腔室。其中，該等腔室包含有依序排列之一預熱腔室、一反應腔室及一冷卻腔室，該預熱腔室、該反應腔室及該冷卻腔室分別設置一位於該輸送裝置上方之上加熱器，用以朝向該受反應物之一頂面作用而調整該受反應物之溫度，該反應腔室及該冷卻腔室分別具有一反應氣體輸入口。To achieve the above object, the gas reaction continuous chamber provided by the present invention comprises at least three chambers, at least four isolating devices, and a conveying device located in the chambers and the isolating devices, each of the chambers being located at the second Between the isolation devices, so that the chambers can be airtight state. The conveying device has a front end, a rear end and at least four gaps through which the separating device can pass, the conveying device is configured to set a reactant and drive the reactant to move toward the front end and pass through the chamber room. The chambers include a preheating chamber, a reaction chamber and a cooling chamber. The preheating chamber, the reaction chamber and the cooling chamber are respectively disposed at the conveying device. The upper upper heater is configured to adjust the temperature of the reactant to the top surface of the reactant, and the reaction chamber and the cooling chamber respectively have a reactive gas input port.
本發明所提供之使用如前述之氣體反應連續腔的氣體反應方法包含有下列步驟：a)將一受反應物設置於該輸送裝置，該受反應物之頂面具有反應材料；b)在該預熱腔室內將該受反應物加熱至一第一溫度；c)使該受反應物進入該反應腔室，該反應腔室內設有反應氣體；d)將該受反應物加熱至一能使該反應材料產生氣體反應之第二溫度；e)使該受反應物進入該冷卻腔室，該冷卻腔室內設有反應氣體；以及f)將該受反應物冷卻至一第三溫度。The gas reaction method of the present invention for using a gas reaction continuous chamber as described above comprises the steps of: a) placing a reactant on the transport device, the top surface of the reactant having a reactive material; b) Heating the reactant to a first temperature in the preheating chamber; c) allowing the reactant to enter the reaction chamber, wherein the reaction chamber is provided with a reaction gas; d) heating the reactant to a level The reaction material generates a second temperature of the gas reaction; e) causing the reactant to enter the cooling chamber, the cooling chamber is provided with a reaction gas; and f) cooling the reactant to a third temperature.
藉此，該受反應物係依序在預熱腔室、反應腔室及冷卻腔室分別進行加熱、氣體反應及冷卻之步驟，而且，完成氣體反應之受反應物通過反應腔室及冷卻腔室的過程中，該反應腔室及該冷卻腔室內的反應氣體可避免受反應物上仍為氣態之反應材料過度散逸。如此一來，該氣體反應連續腔及該氣體反應方法不但可使受反應物之氣體反應效果良好；而且，預熱腔室、反應腔室及冷卻腔室內的加熱器可分別維持在符合其功能之溫度，因而可較快速地將受反應物調節至各階段所需之溫度；再者，預熱腔室、反應腔室及冷卻腔室可同時分別供不同的受反應物進行不同之步驟，意即，不需等到一受反應物完成所有步驟才讓另一受反應物開始進行該等步驟，因此，本發明所提供之氣體反應連續腔及氣體反應方法具有較習用者更高之效率。Thereby, the reactants are sequentially subjected to heating, gas reaction and cooling steps in the preheating chamber, the reaction chamber and the cooling chamber, respectively, and the reactants for completing the gas reaction pass through the reaction chamber and the cooling chamber. During the chamber, the reaction chamber and the reaction gas in the cooling chamber can avoid excessive dissipation of the reaction material which is still gaseous on the reactant. In this way, the gas reaction continuous chamber and the gas reaction method can not only make the gas reaction effect of the reactants good; further, the heaters in the preheating chamber, the reaction chamber and the cooling chamber can be respectively maintained in accordance with the functions thereof. The temperature, so that the reactants can be adjusted to the temperature required for each stage more quickly; in addition, the preheating chamber, the reaction chamber and the cooling chamber can simultaneously perform different steps for different reactants, That is, it is not necessary to wait for one reactant to complete all the steps to allow another reactant to start the steps. Therefore, the gas reaction continuous chamber and gas reaction method provided by the present invention have higher efficiency than the conventional one.
有關本發明所提供之氣體反應連續腔及氣體反應方法的詳細構造、特點、組裝或使用方式，將於後續的實施方式詳細說明中予以描述。然而，在本發明領域中具有通常知識者應能瞭解，該等詳細說明以及實施本發明所列舉的特定實施例，僅係用於說明本發明，並非用以限制本發明之專利申請範圍。Detailed construction, features, assembly or use of the gas reaction continuous chamber and gas reaction method provided by the present invention will be described in the detailed description of the subsequent embodiments. However, it should be understood by those of ordinary skill in the art that the present invention is not limited by the scope of the invention.
10‧‧‧氣體反應連續腔10‧‧‧ gas reaction continuous cavity
12‧‧‧輸送裝置12‧‧‧Conveyor
122‧‧‧前端122‧‧‧ front end
124‧‧‧後端124‧‧‧ Backend
126‧‧‧圓柱126‧‧‧Cylinder
128‧‧‧空隙128‧‧‧ gap
14‧‧‧第一隔離裝置14‧‧‧First isolation device
16‧‧‧預熱腔室16‧‧‧Preheating chamber
18‧‧‧第二隔離裝置18‧‧‧Second isolation device
20‧‧‧反應腔室20‧‧‧Reaction chamber
202‧‧‧反應氣體輸入口202‧‧‧Reaction gas input
22‧‧‧第三隔離裝置22‧‧‧ Third isolation device
24‧‧‧冷卻腔室24‧‧‧Cooling chamber
242‧‧‧反應氣體輸入口242‧‧‧Reactive gas input port
26‧‧‧第四隔離裝置26‧‧‧4th isolation device
28‧‧‧受反應物28‧‧‧Reacted matter
282‧‧‧頂面282‧‧‧ top surface
284‧‧‧底面284‧‧‧ bottom
30‧‧‧氣密閥門30‧‧‧Airtight valve
32‧‧‧風刀單元32‧‧‧Air knife unit
34‧‧‧上加熱器34‧‧‧Upper heater
36‧‧‧下加熱器36‧‧‧ Lower heater
38‧‧‧遮蓋裝置38‧‧‧ Covering device
40‧‧‧頂高單元40‧‧‧ top height unit
42‧‧‧蓋體42‧‧‧ cover
44‧‧‧驅動器44‧‧‧ drive
46‧‧‧移動平台46‧‧‧Mobile platform
48‧‧‧支撐桿48‧‧‧Support rod
50‧‧‧反應空間50‧‧‧Reaction space
60‧‧‧氣體反應連續腔60‧‧‧ gas reaction continuous cavity
62‧‧‧反應腔室62‧‧‧Reaction chamber
622‧‧‧反應氣體輸入口622‧‧‧Reactive gas input port
64‧‧‧冷卻腔室64‧‧‧Cooling chamber
P1‧‧‧頂高位置P1‧‧‧ top position
P2‧‧‧遮蓋位置P2‧‧‧ Covering position
第1圖為本發明一第一較佳實施例所提供之氣體反應連續腔之示意圖，並顯示一受反應物位於該氣體反應連續腔之一預熱腔室，且該氣體反應連續腔之一遮蓋裝置的蓋體係位於一頂高位置；第2圖概為第1圖之局部放大圖，惟顯示該遮蓋裝置之蓋體位於一遮蓋位置，且該受反應物係受該蓋體遮蓋；第3圖至第6圖係類同於第1圖，惟分別顯示使用該氣體反應連續腔之氣體反應方法的不同步驟；以及第7圖為本發明一第二較佳實施例所提供之氣體反應連續腔之示意圖。1 is a schematic view of a gas reaction continuous chamber provided by a first preferred embodiment of the present invention, and shows that a reactant is located in a preheating chamber of the gas reaction continuous chamber, and one of the gas reaction continuous chambers The cover system of the cover device is located at a top position; FIG. 2 is a partial enlarged view of the first view, but the cover of the cover device is located at a cover position, and the subject is covered by the cover; 3 to 6 are similar to Fig. 1, but show different steps of the gas reaction method using the gas reaction continuous chamber, respectively; and Fig. 7 is a gas reaction provided by a second preferred embodiment of the present invention. Schematic diagram of a continuous cavity.
請先參閱第1圖，本發明一第一較佳實施例所提供之氣體反應連續腔10包含有一輸送裝置12，以及依序連接之一第一隔離裝置14、一預熱腔室16、一第二隔離裝置18、一反應腔室20、一第三隔離裝置22、一冷卻腔室24及一第四隔離裝置26，且該輸送裝置12係位於該等腔室16、20、24及該等隔離裝置14、18、22、26內。Referring to FIG. 1 , a gas reaction continuous chamber 10 according to a first preferred embodiment of the present invention includes a conveying device 12 and a first isolation device 14 , a preheating chamber 16 , and a a second isolation device 18, a reaction chamber 20, a third isolation device 22, a cooling chamber 24 and a fourth isolation device 26, and the delivery device 12 is located in the chambers 16, 20, 24 and Within the isolation devices 14, 18, 22, 26.
該輸送裝置12具有一前端122及一後端124，該輸送裝置12係用以設置一受反應物28，且主要係用以帶動該受反應物28朝向該前端122移動進而通過該等腔室16、20、24；然而，該輸送裝置12亦可(但不限於)具有能帶動該受反應物28朝向該後端122移動之功能。The conveying device 12 has a front end 122 and a rear end 124. The conveying device 12 is configured to set a reactant 28 and is mainly used to drive the reactant 28 to move toward the front end 122 and pass through the chambers. 16, 20, 24; however, the transport device 12 can also, but is not limited to, have the function of driving the reactant 28 toward the rear end 122.
在本實施例中，該輸送裝置12包含有多數平行排列之圓柱126，該等圓柱126之材質可為(但不限於)能耐高溫之石英陶瓷，每兩相鄰圓柱126之間具有一空隙128，該等圓柱126朝順時針方向旋轉時能帶動該受反應物28朝向該前端122移動，該等圓柱126朝逆時針方向旋轉時能帶動該受反應物28朝向該後端124移動。In this embodiment, the conveying device 12 includes a plurality of parallel-arranged cylinders 126. The material of the cylinders 126 may be, but not limited to, a quartz ceramic capable of withstanding high temperatures, and a gap 128 between each two adjacent cylinders 126. When the cylinders 126 rotate in the clockwise direction, the reactants 28 can be moved toward the front end 122. When the cylinders 126 rotate in the counterclockwise direction, the reactants 28 can be moved toward the rear end 124.
該第一隔離裝置14、該第二隔離裝置18、該第三隔離裝置22及該第四隔離裝置26分別包含有一氣密閥門30及一風刀單元32，各該氣密閥門30關閉時係穿過該輸送裝置12之空隙128，各該腔室16、18、24 在其二側之氣密閥門30皆關閉時係呈氣密狀態，各該氣密閥門30開啟時可供受反應物28通過，該等風刀單元32係用以使該等腔室16、20、24即使在氣密閥門30開啟時仍不相互連通且亦不與外部環境連通，以避免影響各該腔室16、20、24內的溫度及氣體濃度。該氣密閥門30及該風刀單元32皆具有能使腔室16、18、24呈氣密狀態之功能，因此各該隔離裝置14、18、22、26只要包含有該氣密閥門30及該風刀單元32二者至少其中之一即可。The first isolating device 14, the second isolating device 18, the third isolating device 22, and the fourth isolating device 26 respectively include an airtight valve 30 and a air knife unit 32, each of which is closed when the airtight valve 30 is closed Passing through the gap 128 of the delivery device 12, each of the chambers 16, 18, 24 When the airtight valves 30 on both sides thereof are closed, they are in an airtight state, and each of the airtight valves 30 is open for receiving the reactants 28, and the air knife units 32 are used to make the chambers 16, 20, 24 are not in communication with each other even when the hermetic valve 30 is open, and are not in communication with the external environment to avoid affecting the temperature and gas concentration in each of the chambers 16, 20, 24. The airtight valve 30 and the air knife unit 32 all have the function of making the chambers 16, 18, 24 airtight. Therefore, each of the isolation devices 14, 18, 22, 26 includes the airtight valve 30 and At least one of the air knife units 32 may be used.
該預熱腔室16、該反應腔室20及該冷卻腔室24原先係呈真空狀態，或者亦可充以氮氣。此外，該反應腔室20及該冷卻腔室24分別具有一反應氣體輸入口202、242，係用以供一反應氣體源(圖中未示)利用飽和蒸氣壓而將反應氣體(例如，欲進行硒化反應時，該反應氣體即為硒蒸氣)輸入至反應腔室20及冷卻腔室24。值得一提的是，在各該腔室16、20、24原先已充設氮氣的情況下，反應氣體需先與氮氣混合，以利用氮氣作為攜帶氣體(carrier gas)而一同與反應氣體自各該反應氣體輸入口202、242輸入至反應腔室20及冷卻腔室24。The preheating chamber 16, the reaction chamber 20, and the cooling chamber 24 are originally in a vacuum state, or may be filled with nitrogen. In addition, the reaction chamber 20 and the cooling chamber 24 respectively have a reactive gas input port 202, 242 for supplying a reactive gas source (not shown) to the reaction gas by using a saturated vapor pressure (for example, When the selenization reaction is carried out, the reaction gas is selenium vapor) is input to the reaction chamber 20 and the cooling chamber 24. It is worth mentioning that in the case where each of the chambers 16, 20, 24 is originally filled with nitrogen gas, the reaction gas is first mixed with nitrogen gas to utilize nitrogen as a carrier gas together with the reaction gas. The reaction gas input ports 202, 242 are input to the reaction chamber 20 and the cooling chamber 24.
該預熱腔室16、該反應腔室20及該冷卻腔室24分別設置複數位於輸送裝置12上方之上加熱器34，以及複數位於輸送裝置12下方之下加熱器36。該等上加熱器34可為(但不限於)紅外線加熱器，係用以朝向受反應物28之頂面282作用而調整受反應物28之溫度。該等下加熱器36可為(但不限於)紅外線加熱器，係用以透過輸送裝置12之空隙128而朝向受反應物28之底面284作用而調整受反應物28之溫度。The preheating chamber 16, the reaction chamber 20 and the cooling chamber 24 are respectively provided with a heater 34 above the conveying device 12 and a heater 36 below the conveying device 12. The upper heaters 34 can be, but are not limited to, infrared heaters that act to adjust the temperature of the reactants 28 toward the top surface 282 of the reactant 28 . The lower heaters 36 can be, but are not limited to, infrared heaters for adjusting the temperature of the reactants 28 by the action of the voids 128 of the delivery device 12 toward the bottom surface 284 of the reactant 28 .
值得一提的是，各該腔室16、20、24內之上、下加熱器34、36的數量並無限制而可依需求設置，而且，各該腔室16、20、24內亦可不設置下加熱器36，該輸送裝置12亦不限為如本實施例所提供之由很多圓柱126構成而形成有很多空隙128之形式，只要具有至少四空隙以供隔離裝置14、18、22、26穿過即可。惟，設有下加熱器36之實施態樣可使受反應物28之溫度更快速地被調節至各階段需求之溫度。It is worth mentioning that the number of upper and lower heaters 34, 36 in each of the chambers 16, 20, 24 is not limited and can be set according to requirements, and each chamber 16, 20, 24 may not The lower heater 36 is disposed, and the conveying device 12 is not limited to being formed by a plurality of cylinders 126 as provided in the embodiment, and has a plurality of voids 128 as long as it has at least four gaps for the isolating devices 14, 18, 22, 26 can pass. However, the embodiment in which the lower heater 36 is provided allows the temperature of the reactant 28 to be adjusted more rapidly to the temperature required for each stage.
該反應腔室20更設置一遮蓋裝置38，該遮蓋裝置38包含有一頂高單元40及一蓋體42，該頂高單元40包含有一驅動器44、一受該驅動器44驅動而上下移動之移動平台46，以及固設於該移動平台46上之四支撐桿48，該蓋體42係可分離地設置於該等支撐桿48上。藉此，該蓋 體42能受該頂高單元40帶動而於一頂高位置P1(如第1圖所示)與一遮蓋位置P2(如第2圖所示)之間移動，該蓋體42位於頂高位置P1時係與輸送裝置12相隔可供受反應物28通過之距離，該蓋體42位於遮蓋位置P2時係蓋設於受反應物28之頂面282，且該蓋體42與受反應物28之頂面282之間形成一反應空間50。The cover chamber 38 further includes a cover device 38. The cover device 38 includes a top height unit 40 and a cover body 42. The top height unit 40 includes a driver 44 and a mobile platform driven by the driver 44 to move up and down. 46, and four support rods 48 fixed on the moving platform 46, the cover body 42 is detachably disposed on the support rods 48. Thereby, the cover The body 42 can be moved by the top height unit 40 to move between a top height position P1 (as shown in FIG. 1) and a cover position P2 (shown in FIG. 2), and the cover 42 is at the top height position. P1 is separated from the conveying device 12 by the distance through which the reactant 28 passes. When the cover 42 is located at the covering position P2, it is disposed on the top surface 282 of the reactant 28, and the cover 42 and the reactant 28 are A reaction space 50 is formed between the top surfaces 282.
使用如前述之氣體反應連續腔10的氣體反應方法包含有下列步驟：The gas reaction method using the gas reaction continuous chamber 10 as described above includes the following steps:
a)將受反應物28設置於輸送裝置12，該受反應物28之頂面282具有反應材料。a) The reactant 28 is placed in the delivery device 12, and the top surface 282 of the reactant 28 has a reactive material.
舉例而言，該受反應物28可為鍍有銅、銦、鎵、硒等材料之玻璃基板，其中硒係位於最上層而顯露於頂面282且即為該反應材料，下述之步驟可使原本的固態硒產生氣體反應(亦即硒化反應)，進而在玻璃基板上合成出CIGS半導體薄膜。For example, the reactant 28 may be a glass substrate coated with a material such as copper, indium, gallium, selenium or the like, wherein the selenium is located at the uppermost layer and is exposed on the top surface 282 and is the reactive material. The following steps may be used. The original solid selenium is reacted with a gas (that is, a selenization reaction), and a CIGS semiconductor film is synthesized on a glass substrate.
b)在該預熱腔室16內將受反應物28加熱至一第一溫度。b) heating the reactant 28 to a first temperature within the preheating chamber 16.
延續前述例子，欲進行硒化反應之受反應物28可在此步驟中加熱至大約攝氏210度，亦即接近硒的熔點。值得一提的是，為了避免受反應物28因升溫速度過快而造成其玻璃基板破裂，該輸送裝置12可在步驟a)與步驟b)之間先反覆前後移動，以帶動受反應物28反覆通過第一隔離裝置14進而反覆進出預熱腔室16，藉以使受反應物28在一開始先緩慢升溫。Continuing the foregoing example, the reactant 28 to be subjected to the selenization reaction can be heated in this step to about 210 degrees Celsius, that is, close to the melting point of selenium. It is worth mentioning that, in order to avoid the glass substrate from being ruptured due to the excessive temperature rise rate of the reactants 28, the conveying device 12 can be moved back and forth between step a) and step b) to drive the reactants 28 . The preheating chamber 16 is repeatedly passed back and forth through the first isolating device 14 to cause the reactant 28 to slowly warm up at the beginning.
c)如第3圖所示，使受反應物28進入反應腔室20，該反應腔室20內設有反應氣體。延續前述例子，該反應氣體即為硒蒸氣。c) As shown in Fig. 3, the reactant 28 is introduced into the reaction chamber 20, and a reaction gas is provided in the reaction chamber 20. Continuing the foregoing example, the reaction gas is selenium vapor.
在本實施例中，此時可如第2圖所示地將該遮蓋裝置38之蓋體42蓋設於受反應物28之頂面282。請參閱第4圖，該頂高單元40在將蓋體42帶動至如第2圖所示之遮蓋位置P2之後，該移動平台46可再向下移動一段距離，以帶動該等支撐桿48向下移動並與蓋體42分離，然後，該受反應物28再連同蓋體42一起移動至反應腔室20內的上、下加熱器34、36之間(如第5圖所示)，以進行下述e)之加熱步驟。然而，該遮蓋裝置38並不限為蓋體42能隨受反應物28一起移動之設計；例如，該遮蓋裝置38可設置於一上加熱器34下方，則受反應物28被蓋體42遮蓋後不需移動即 可進行加熱。In the present embodiment, the lid 42 of the covering device 38 can be placed on the top surface 282 of the reactant 28 as shown in Fig. 2 at this time. Referring to FIG. 4, after the cover unit 42 is driven to the cover position P2 as shown in FIG. 2, the moving platform 46 can be further moved downward by a distance to drive the support bars 48 to Moving downward and separating from the cover 42, then, the reactant 28 is moved together with the cover 42 to between the upper and lower heaters 34, 36 in the reaction chamber 20 (as shown in Fig. 5), The heating step of e) below was carried out. However, the covering device 38 is not limited to the design that the cover 42 can move with the reactants 28; for example, the covering device 38 can be disposed under an upper heater 34, and the reactant 28 is covered by the cover 42. No need to move after It can be heated.
值得一提的是，由於上加熱器34係透過蓋體42而對受反應物28之頂面282進行加熱，因此，該蓋體42之較佳材質為石英玻璃，藉由其可透光之特性，上加熱器34之輻射熱可直接對受反應物28之頂面282作用；然而，該蓋體42亦可為不透光但導熱性佳之材質，例如石墨，使得上加熱器34之輻射熱透過蓋體42傳導而間接對受反應物28加熱。It is worth mentioning that since the upper heater 34 heats the top surface 282 of the reactant 28 through the cover 42 , the preferred material of the cover 42 is quartz glass, which is transparent to light. Characteristic, the radiant heat of the upper heater 34 can directly act on the top surface 282 of the reactant 28; however, the cover 42 can also be a material that is opaque but has good thermal conductivity, such as graphite, so that the radiant heat of the upper heater 34 is transmitted. The cover 42 conducts and indirectly heats the reactant 28.
d)將受反應物28加熱至一能使該反應材料產生氣體反應之第二溫度。延續前述例子，該第二溫度大約為攝氏500~550度，以使受反應物上的固態硒產生硒化反應。d) heating the reactant 28 to a second temperature which causes the reaction material to react with the gas. Continuing the foregoing example, the second temperature is about 500-550 degrees Celsius to cause selenization of the solid selenium on the reactant.
在此步驟中，由於該蓋體42係蓋設於受反應物28之頂面282，因此受反應物28上的反應材料加熱後產生之蒸氣會被限制於該反應空間50，使得該反應空間50很快達到飽和蒸氣壓，因此該反應材料會很快地產生氣體反應。In this step, since the cover 42 is disposed on the top surface 282 of the reactant 28, the vapor generated by the reaction material on the reactant 28 is heated to be limited to the reaction space 50, so that the reaction space The saturated vapor pressure is quickly reached by 50, so the reaction material will quickly generate a gas reaction.
在本實施例中，在進行下述之步驟e)之前需先使該遮蓋裝置38之蓋體42離開受反應物28之頂面282，此步驟可先使受反應物28連同蓋體42一起移動至如第4圖所示之位置，再利用該頂高裝置40將該蓋體42帶動至該頂高位置P1(如第3圖所示)。In this embodiment, the cover 42 of the covering device 38 needs to be removed from the top surface 282 of the reactant 28 before performing the following step e). This step may first bring the reactant 28 together with the cover 42. Moving to the position shown in Fig. 4, the lid 42 is brought to the top position P1 by the top device 40 (as shown in Fig. 3).
e)如第6圖所示，使受反應物28進入冷卻腔室24，該冷卻腔室24內設有反應氣體。延續前述例子，該反應氣體即為硒蒸氣。e) As shown in Fig. 6, the reactant 28 is introduced into the cooling chamber 24, in which the reaction gas is disposed. Continuing the foregoing example, the reaction gas is selenium vapor.
值得一提的是，該受反應物28上的反應材料在產生氣體反應之後仍為氣態，因此，該受反應物28在不受蓋體42遮蓋之下從第3圖所示之位置移動至冷卻腔室24的過程中，需藉由反應腔室20內的反應氣體而防止受反應物28上的氣態反應材料散逸；同樣地，該受反應物28位於冷卻腔室24內且溫度仍高的情況下，亦需藉由反應腔室24內的反應氣體而防止受反應物28上的氣態反應材料散逸。It is worth mentioning that the reaction material on the reactant 28 is still in a gaseous state after the gas reaction is generated, and therefore, the reactant 28 is moved from the position shown in FIG. 3 to the position not covered by the cover 42 to During the cooling of the chamber 24, the gaseous reactant material on the reactant 28 is prevented from being dissipated by the reaction gas in the reaction chamber 20; likewise, the reactant 28 is located in the cooling chamber 24 and the temperature is still high. In the case of the reaction gas in the reaction chamber 24, the gaseous reaction material on the reactant 28 is also prevented from being dissipated.
本發明所提供之氣體反應連續腔亦可不包含有該遮蓋裝置38，則該氣體反應方法即無如前述之關於遮蓋裝置的步驟。然而，該遮蓋裝置38能使該受反應物28產生氣體反應之效率高且效果良好，並能減少反應材料及反應氣體的使用量。The gas reaction continuous chamber provided by the present invention may also not include the covering device 38, and the gas reaction method is not as described above with respect to the covering device. However, the covering device 38 can make the gas reaction of the reactant 28 highly efficient and effective, and can reduce the amount of the reaction material and the reaction gas used.
f)將受反應物28冷卻至一第三溫度。延續前述例子，該第 二溫度為攝氏200度以下，藉此，受反應物28離開冷卻腔室24而進入外部環境時，受反應物28之玻璃基板可避免因與室溫之溫差過大而破裂。f) cooling the reactant 28 to a third temperature. Continuing the above example, the first The second temperature is 200 degrees Celsius or less, whereby when the reactant 28 leaves the cooling chamber 24 and enters the external environment, the glass substrate of the reactant 28 can be prevented from being broken due to excessive temperature difference from room temperature.
藉由前述內容可得知，該受反應物28係依序在預熱腔室16、反應腔室20及冷卻腔室24分別進行加熱、氣體反應及冷卻之步驟，因此，該預熱腔室16、該反應腔室20及該冷卻腔室24內的上、下加熱器34、36可分別維持在符合其功能之溫度，而不需如習用者配合不同步驟而大幅改變其溫度；藉此，本發明可較快速地將受反應物28調節至各階段所需之溫度。而且，該預熱腔室16、該反應腔室20及該冷卻腔室24可同時分別供不同的受反應物28進行不同之步驟，意即，不需等到一受反應物完成所有步驟才讓另一受反應物開始進行該等步驟，因此，本發明所提供之氣體反應連續腔及氣體反應方法具有較習用者更高之效率。As can be seen from the foregoing, the reactant 28 is sequentially subjected to steps of heating, gas reaction, and cooling in the preheating chamber 16, the reaction chamber 20, and the cooling chamber 24, and thus, the preheating chamber 16. The reaction chambers 20 and the upper and lower heaters 34, 36 in the cooling chamber 24 can be maintained at temperatures consistent with their functions, respectively, without requiring the user to substantially change their temperature in conjunction with different steps; The present invention allows for faster adjustment of the reactant 28 to the temperature required for each stage. Moreover, the preheating chamber 16, the reaction chamber 20, and the cooling chamber 24 can simultaneously perform different steps for different reactants 28, that is, without waiting for a reactant to complete all steps. The other reactants begin the steps, and therefore, the gas reaction continuous chamber and gas reaction methods provided by the present invention have higher efficiency than conventional ones.
值得一提的是，本發明所提供之氣體反應連續腔並不限於僅有前述之三腔室16、20、24，而能具有三個以上的腔室，且各該腔室係位於二隔離裝置之間(亦即有四個以上的隔離裝置)而能達到氣密狀態，例如下述之本發明一第二較佳實施例所提供者。It is worth mentioning that the gas reaction continuous cavity provided by the present invention is not limited to only the three chambers 16, 20, 24 described above, but can have more than three chambers, and each of the chambers is located at two isolations. An airtight state can be achieved between the devices (i.e., there are more than four isolation devices), such as those provided by a second preferred embodiment of the invention described below.
請參閱第7圖，本發明之第二較佳實施例所提供的氣體反應連續腔60中，該反應腔室20及該冷卻腔室24之間更有另一反應腔室62，該反應腔室62之功用係類同於該反應腔室20，惟該反應腔室62之反應氣體輸入口622係用以供與該反應腔室20內不同的反應氣體進入該反應腔室62，使得同一受反應物28在該反應腔室20內完成一種氣體反應之後能再接續著在該反應腔室62內進行另一種氣體反應。Referring to FIG. 7, in the gas reaction continuous chamber 60 provided by the second preferred embodiment of the present invention, another reaction chamber 62 is further disposed between the reaction chamber 20 and the cooling chamber 24, and the reaction chamber is further provided. The function of the chamber 62 is the same as that of the reaction chamber 20, but the reaction gas input port 622 of the reaction chamber 62 is used to supply a different reaction gas into the reaction chamber 62 from the reaction chamber 20, so that the same After the reactant 28 completes a gas reaction in the reaction chamber 20, another gas reaction can be carried out in the reaction chamber 62.
此外，該等反應腔室20、62及該冷卻腔室24之間可更有另一冷卻腔室64，該冷卻腔室64之功用係類同於該冷卻腔室24，惟該冷卻腔室64係用以使完成氣體反應而溫度相當高之受反應物28先初步降溫後，再到該冷卻腔室24內進一步降溫；延續前述該第一較佳實施例中所舉之例子，該受反應物28能在該冷卻腔室64內先由大約攝氏500~550度降溫至大約攝氏400~450度，再進入該冷卻腔室24而降溫至攝氏200度以下；如此一來，各該冷卻腔室64、24內的加熱器溫度變化幅度會較小，因此可提高降溫效率。不論氣體反應連續腔僅具有單一反應腔室，或者具有複數反應腔室，都可利用複數冷卻腔室而達到多階段式降溫，以提高降溫效率。In addition, there may be another cooling chamber 64 between the reaction chambers 20, 62 and the cooling chamber 24. The cooling chamber 64 functions similarly to the cooling chamber 24, but the cooling chamber The 64 series is used to cause the reactants 28 having a relatively high temperature to complete the gas reaction to be initially cooled, and then further cooled in the cooling chamber 24; continuing the example of the first preferred embodiment, the The reactant 28 can be cooled in the cooling chamber 64 from about 500 to 550 degrees Celsius to about 400 to 450 degrees Celsius, and then enters the cooling chamber 24 to be cooled down to 200 degrees Celsius; thus, the cooling is performed. The temperature variation of the heaters in the chambers 64, 24 will be small, so that the cooling efficiency can be improved. Regardless of whether the gas reaction continuous chamber has only a single reaction chamber or has a plurality of reaction chambers, a plurality of cooling chambers can be utilized to achieve multi-stage cooling to improve the cooling efficiency.
最後，必須再次說明，本發明於前揭實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。Finally, it is to be noted that the constituent elements disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention, and alternative or variations of other equivalent elements should also be the scope of the patent application of the present application. Covered.
10‧‧‧氣體反應連續腔10‧‧‧ gas reaction continuous cavity
12‧‧‧輸送裝置12‧‧‧Conveyor
122‧‧‧前端122‧‧‧ front end
124‧‧‧後端124‧‧‧ Backend
126‧‧‧圓柱126‧‧‧Cylinder
128‧‧‧空隙128‧‧‧ gap
14‧‧‧第一隔離裝置14‧‧‧First isolation device
16‧‧‧預熱腔室16‧‧‧Preheating chamber
18‧‧‧第二隔離裝置18‧‧‧Second isolation device
20‧‧‧反應腔室20‧‧‧Reaction chamber
202‧‧‧反應氣體輸入口202‧‧‧Reaction gas input
22‧‧‧第三隔離裝置22‧‧‧ Third isolation device
24‧‧‧冷卻腔室24‧‧‧Cooling chamber
242‧‧‧反應氣體輸入口242‧‧‧Reactive gas input port
26‧‧‧第四隔離裝置26‧‧‧4th isolation device
28‧‧‧受反應物28‧‧‧Reacted matter
282‧‧‧頂面282‧‧‧ top surface
284‧‧‧底面284‧‧‧ bottom
30‧‧‧氣密閥門30‧‧‧Airtight valve
32‧‧‧風刀單元32‧‧‧Air knife unit
34‧‧‧上加熱器34‧‧‧Upper heater
36‧‧‧下加熱器36‧‧‧ Lower heater
38‧‧‧遮蓋裝置38‧‧‧ Covering device
40‧‧‧頂高單元40‧‧‧ top height unit
42‧‧‧蓋體42‧‧‧ cover
44‧‧‧驅動器44‧‧‧ drive
46‧‧‧移動平台46‧‧‧Mobile platform
48‧‧‧支撐桿48‧‧‧Support rod
P1‧‧‧頂高位置P1‧‧‧ top position
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| CN104233213A (en) * | 2013-06-20 | 2014-12-24 | 生阳新材料科技（宁波）有限公司 | Gas reaction continuous cavity and gas reaction method |
| CN106277816B (en) * | 2016-07-29 | 2019-08-23 | 爱发科豪威光电薄膜科技(深圳)有限公司 | Coating film production line multistage atmosphere isolation device |
| CN110394570A (en) * | 2018-04-24 | 2019-11-01 | 君泰创新（北京）科技有限公司 | Welding method and system |
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| EP0368900B1 (en) * | 1987-06-24 | 1994-09-21 | Advanced Semiconductor Materials America, Inc. | Improved reaction chambers and methods for cvd |
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|---|---|
| TW201447008A (en) | 2014-12-16 |
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