TWI467777B - 光學裝置之封裝結構 - Google Patents

光學裝置之封裝結構 Download PDF

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TWI467777B
TWI467777B TW101120195A TW101120195A TWI467777B TW I467777 B TWI467777 B TW I467777B TW 101120195 A TW101120195 A TW 101120195A TW 101120195 A TW101120195 A TW 101120195A TW I467777 B TWI467777 B TW I467777B
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light
photosensitive element
optical device
package structure
light beam
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TW201351666A (zh
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En Feng Hsu
Nien Tse Chen
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Pixart Imaging Inc
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Priority to TW101120195A priority Critical patent/TWI467777B/zh
Priority to US13/865,640 priority patent/US9599745B2/en
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Priority to US15/370,600 priority patent/US10514477B2/en
Priority to US16/681,894 priority patent/US10816692B2/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01VGEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V8/00Prospecting or detecting by optical means
    • G01V8/10Detecting, e.g. by using light barriers
    • G01V8/12Detecting, e.g. by using light barriers using one transmitter and one receiver
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04Systems determining the presence of a target
    • GPHYSICS
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    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4811Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813Housing arrangements
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    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02164Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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    • H01L31/141Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier
    • H01L31/143Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the semiconductor device sensitive to radiation being without a potential-jump barrier or surface barrier the light source being a semiconductor device with at least one potential-jump barrier or surface barrier, e.g. light emitting diode
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    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Description

光學裝置之封裝結構
本發明是有關於一種封裝結構,且特別是有關於一種光學裝置之封裝結構。
圖1為習知之一種近接式光感測器之封裝結構的剖面示意圖。請參考圖1,習知之近接式光感測器100包括一發光源110、一光偵測器120以及一封裝殼體130。封裝殼體130分別具有一第一容置空間132與一第二容置空間134,其中發光源110設置於第一容置空間132,而光偵測器120設置於第二容置空間134。在近接式光感測器100中,當一物體101靠近近接式光感測器100時,則發光源110所提供之光束L1,便會被物體101所反射而傳遞回光偵測器120,從而可獲知物體101是否靠近之訊息。
然而,在近接式光感測器100中,位於第一容置空間132的發光源110係透過表面黏著的方式電連接封裝殼體130,而光偵測器120通常是透過打線接合(wire bonding)的方式與封裝殼體130電連接,如圖1所示。如此一來,第二容置空間134的尺寸(如:寬度W1)便不易縮小。
此外,由於封裝結構130更包括一遮光結構136,位於發光源110與光偵測器120之間,藉以避免發光源110所提供之光束L1直接地傳遞至光感測器120上進而無法動作。然而,藉由遮光結構136之設計與使用雖可有效地限制光線之行進路徑,但同樣地仍會造成近接式光感測器100之整體體積無法有效地被縮小。
本發明提供一種光學裝置之封裝結構,其可具有較小的尺 寸並具有較佳的光學表現。
本發明的其他目的和優點可以從本發明所揭露的技術特徵中得到進一步的了解。
為達上述之一或部份或全部目的或是其他目的,本發明之一實施例提出一種光學裝置之封裝結構,其包括一基板、一發光元件、一感光元件以及一擋光結構。發光元件配置於基板上並與基板電性連接。發光元件適於提供一光束。感光元件配置於基板上,且感光元件為一晶片尺寸封裝元件(chip scale package,CSP),其中感光元件適於接收被一物體反射後之光束。擋光結構設置於感光元件之周邊。
在本發明之一實施例中,上述的擋光結構設置於基板上並與基板實體連接。在本發明之一實施例中,光學裝置之封裝結構更包括一多層膜,設置於感光元件上,其中被物體反射後之至少部分光束適於通過多層膜而傳遞至感光元件。在本發明之一實施例中,被物體反射後之至少部分光束入射至多層膜之入射角若小於一預定角度,則光束適於通過多層膜而傳遞至感光元件。
在本發明之一實施例中,上述的擋光結構實體連接感光元件。在本發明之一實施例中,光學裝置之封裝結構更包括一多層膜,設置於感光元件上,其中被物體反射後之至少部分光束適於通過多層膜而傳遞至感光元件。在本發明之一實施例中,上述的擋光結構包括一擋光蓋,位於感光元件上方並具有一開口,其中被物體反射後之至少部分光束適於通過開口而傳遞至感光元件。在本發明之一實施例中,上述的開口暴露出部分多層膜。在本發明之一實施例中,光學裝置之封裝結構更包括一分隔牆,配置於基板上並位於感光元件與發光元件之間。在本 發明之一實施例中,被物體反射後之至少部分光束入射至多層膜之入射角若小於一預定角度,則光束適於通過多層膜而傳遞至感光元件。
在本發明之一實施例中,上述的擋光結構包括一透光材料層與一遮光材料層,透光材料層之一側與感光元件實體連接,而透光材料層之另一側則與遮光材料層實體接觸。在本發明之一實施例中,透光材料層覆蓋感光元件,且遮光材料層具有一開口,以暴露出部分透光材料層,且被物體反射後之至少部分光束適於通過開口而傳遞至感光元件。
在本發明之一實施例中,上述的發光元件為不可見光發光元件,而上述的感光元件為不可見光感光元件。
在本發明之一實施例中,上述的感光元件透過複數個導電材料而與基板電性連接,且這些導電材料位於感光元件與基板之間。
在本發明之一實施例中,上述的發光元件與上述的感光元件之間距相隔大於0.1mm小於3mm。
基於上述,本發明之光學裝置之封裝結構將感光元件採用為晶片尺寸封裝元件,而無須使用傳統打線接合的方式,從而可降低光學裝置之封裝結構之整體體積與尺寸。另外,將多層膜設置於感光元件上,除了可減少雜散光傳遞至感光元件的機會外,亦可縮小光學裝置之封裝結構之整體體積與尺寸。再者,透過適當地調整擋光結構的設計,除了可縮小光學裝置之封裝結構之整體體積與尺寸外,還可降低製作成本與製作困難度。
為讓本發明之上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之一較佳實施例的詳細說明中,將可清楚的呈現。以下實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。
圖2為本發明一實施例之光學裝置之封裝結構的示意圖。本實施例之光學裝置之封裝結構200可以近接式光感測器之架構作為說明,具體而言,光學裝置之封裝結構200包括一基板210、一發光元件220、一感光元件230以及一擋光結構240。發光元件220配置於基板210上並與基板210電性連接。發光元件220適於提供一光束L1。在本實施例中,發光元件220可為發光二極體或是雷射二極體,其中由於發光二極體之成本較為低廉,因此本實施例之發光元件220是以發光二極體作為舉例說明,但不限於此。若為使光學裝置之封裝結構200可提供較長之可操作距離且不考量成本之問題,發光元件220亦可採用雷射二極體。另外,為避免使用者觀察到發光元件220之光線,本實施例之發光元件220是以不可見光作為舉例說明,其中較佳地為紅外光之發光元件220,但不限於此。
此外,當發光元件220採用發光二極體時,為了有效地降低或縮小光學裝置之封裝結構200之整體體積與尺寸,發光元件220可採用表面黏著型(Surface Mounted Technology,SMT)之發光元件,而與基板210之電連接,其中基板210可以是一電路板(circuit board)或是一導線支架(lead frame)之類的基板。
在光學裝置之封裝結構200中,感光元件230配置於基板210上,且感光元件230適於接收被一物體201反射後之光束L1’。特別的是,為了有效地降低或縮小光學裝置之封裝結構200 之整體體積與尺寸,感光元件230可以是一晶片尺寸封裝元件(chip scale package,CSP),其中晶片尺寸封裝(CSP)技術是將晶片封裝後,尺寸不大於原晶片之1.2倍的封裝技術。具體而言,本實施例所謂之晶片尺寸封裝元件,係指以各種方式封裝後的感光元件230,其封裝體邊長較內含晶片邊長大20%以內,或封裝體的面積是內含晶片面積的1.5倍以內。換言之,本實施例之感光元件230透過使用晶片尺寸封裝(CSP)技術,可將感光元件230之封裝尺寸縮至原來的1/4至1/10,以配合現時輕、薄、短、小的產品趨勢。
另外,為了避免傳統使用打線接合(wire bonding)的方式連接感光元件230與基板210,而造成整體封裝尺寸不易縮小,本實施例之感光元件230係可透過複數個導電材料232而與基板210電性連接,且這些導電材料232介於感光元件230與基板210之間,如圖2所示。在本實施例中,這些導電材料232可為錫球。
請繼續參考圖2,為了避免發光元件220所提供之光束L1直接地傳遞至感光元件220上,而導致光學裝置之封裝結構200無法動作(如:判斷是否有物體接近),因此,擋光結構240設置於感光元件230之周邊,其中擋光結構240可以是設置於基板210上並與基板210實體連接,如圖2所示。需要說明的是,由於感光元件230為晶片尺寸封裝元件,且感光元件230可透過導電材料232直接地與基板210電性連接,而無須使用傳統打線接合的方式,從而可使感光元件230與擋光結構240之間的距離相當地靠近(無須考量到打線接合所需之空間),進一步地降低光學裝置之封裝結構200之整體體積與尺寸。
圖3A為本發明另一實施例之光學裝置之封裝結構的示意 圖。請同時參考圖2與圖3A,本實施例之光學裝置之封裝結構300與前述光學裝置之封裝結構200採用相似之結構,二者不同之處在於:光學裝置之封裝結構300更包括一多層膜310,其中多層膜310設置於感光元件230上,且被物體201反射後之至少部分光束L1’適於通過多層膜310而傳遞至感光元件230。
具體而言,多層膜310係可藉由不同折射率之膜層312堆疊,以濾除非特定波長之光線,從而可使特定波長之光束L1’可穿透,其中偏離法線N1之入射光線的可穿透波長會是特定波長之波長偏移量。舉例來說,若多層膜310之堆疊膜層312是設計波長680nm可通過時,係代表波長680nm之入射光束L1’之入射角θ為0度時可通過,而當越偏離法線時(即入射角θ大於0度時),則代表其他波長(如:670 nm~690nm)可通過多層膜310而傳遞至感光元件230上。換言之,本實施例之多層膜310係可為一種IR pass之濾光元件。
詳細來說,被物體201反射後之至少部分光束L1’入射至多層膜310之入射角θ若小於一預定角度,則光束L1’適於通過多層膜310而傳遞至感光元件230,如圖3B所示,其中圖3B為圖3A之光學裝置之封裝結構的局部放大圖。詳細來說,當特定波長範圍之光束L1’入射至多層膜310之入射角θ越小(即光束L1’越靠近法線N1時),則特定波長範圍之光束L1’較容易通過多層膜310而傳遞至感光元件230,反之,當特定波長範圍之光束L1’入射至多層膜310之入射角θ越大(即光束L1’越遠離法線N1時),則特定波長範圍之光束L1’便無法通過多層膜310而傳遞至感光元件230。值得一提的是,上述之特定波長範圍係可指發光元件220所提供之光束L1’之波長,而適當高度之擋光結構240將可侷限入射至多層膜310之光束 L1’的入射角θ,從而可更有效地濾除非特定波長範圍之光束L1’,並使特定波長範圍之光束L1’通過多層膜310而傳遞至感光元件230上。在一實施例中,擋光結構240之高度為大於發光元件以及感光元件之高度,並小於5mm。
基於上述可知,本實施例之光學裝置之封裝結構300除了可具有上述光學裝置之封裝結構200所提及之優點外,亦可透過多層膜310的使用,減少雜散光傳遞至感光元件230的機會,從而可提升光學裝置之封裝結構300之光學感測表現。
圖4為本發明又一實施例之光學裝置之封裝結構的示意圖。請同時參考圖4與圖3,本實施例之光學裝置之封裝結構400與前述光學裝置之封裝結構300採用相似之結構,二者不同之處在於:擋光結構410實體連接感光元件230,但不與基板210實體連接。具體而言,本實施例主要是將擋光結構410設置於感光元件230之周邊並與感光元件230實體連接,如此一來便無須於基板210上設置前述的擋光結構240。意即,當感光元件230設置於基板210時,該擋光結構240便會隨著感光元件230而同時被設置於基板210之上。如此將可更進一步地縮小光學裝置之封裝結構400之整體體積與尺寸。
基於上述可知,本實施例之光學裝置之封裝結構400除了可具有上述光學裝置之封裝結構200、300所提及之優點外,亦可透過將擋光結構410實體連接感光元件230的設計,而更進一步地縮小光學裝置之封裝結構400之整體體積與尺寸。
圖5為本發明再一實施例之光學裝置之封裝結構的示意圖。請同時參考圖5與圖4,本實施例之光學裝置之封裝結構500與前述光學裝置之封裝結構400採用相似之結構,二者不同之處在於:擋光結構410還包括一擋光蓋412,其中擋光蓋412位 於感光元件230上方並具有一暴露出部分多層膜310的開口412a,而被物體201反射後之至少部分光束L1’適於通過開口412a而傳遞至感光元件230。在本實施例中,光學裝置之封裝結構500除了可具有上述光學裝置之封裝結構200~400所提及之優點外,亦可設置具有開口412a之擋光蓋412於感光元件230之上方,進而可更有效地減少雜散光傳遞至感光元件230上。
圖6為本發明更一實施例之光學裝置之封裝結構的示意圖。請同時參考圖6與圖5,本實施例之光學裝置之封裝結構600與前述光學裝置之封裝結構500採用相似之結構,二者不同之處在於:光學裝置之封裝結構600更包括一分隔牆610,其中分隔牆610配置於基板210上並位於感光元件230與發光元件220之間,用以降低發光元件220所提供之光束L1直接地從側面傳遞至感光元件230之可能性,同時亦可減少雜散光傳遞至感光元件230上。除此之外,本實施例之光學裝置之封裝結構600亦具有前述光學裝置之封裝結構200~500所提及之優點,在此便不再贅述。
圖7為本發明還一實施例之光學裝置之封裝結構的示意圖。請同時參考圖7與圖4,本實施例之光學裝置之封裝結構700與前述光學裝置之封裝結構400採用相似之結構,二者不同之處在於:本實施例之擋光結構710包括一透光材料層712與一遮光材料層714,其中透光材料層712之一側712a與感光元件230實體連接,而透光材料層712之另一側712b則與遮光材料層714實體接觸。在本實施例中,可先使用透光材料(如:透明膠材)形成於感光元件230之周邊以形成如圖7所繪示之透光材料層712,之後再利用塗佈或貼附的方式將遮光材料(如:黑色樹酯)形成於透光材料層之外側712b。又或者是,可 先形成如圖7所繪示之擋光結構710後,再將擋光結構710與感光元件230連接(如:貼附),上述皆為可實施之範例,但不限於此,此部分可依據使用者而略微調整。基於上述可知,本實施例之光學裝置之封裝結構700可具有上述光學裝置之封裝結構200~400所提及之優點,在此便不再贅述。
圖8為本發明尚一實施例之光學裝置之封裝結構的示意圖。請同時參考圖8與圖7,本實施例之光學裝置之封裝結構800與前述光學裝置之封裝結構700採用相似之結構,二者不同之處在於:透光材料層712’覆蓋感光元件230,且遮光材料層714’具有一開口714a,以暴露出部分透光材料層712’,其中被物體201反射後之至少部分光束L1’適於通過開口714a而傳遞至感光元件230,如圖8所示。在本實施例中,可先使用透光封裝膠材直接地形成於感光元件230上以形成如圖8所繪示之透光材料層712’,之後再利用塗佈或貼附的方式將遮光材料(如:黑色樹酯)形成於透光材料層712’之外側,如圖8所繪示。同樣地,本實施例之光學裝置之封裝結構800可具有上述光學裝置之封裝結構200~400所提及之優點,在此便不再贅述。
值得一提的是,由於本實施例之光學裝置之封裝結構200~800整體尺寸相較於傳統光學裝置之封裝結構100整體尺寸將可大大被縮小,因此,上述的發光元件210與上述的感光元件230之間距W1至少可落在0.1mm~3mm之間。
綜上所述,本發明之光學裝置之封裝結構至少具有以下優點。首先,感光元件為晶片尺寸封裝元件,且無須使用傳統打線接合的方式,從而可降低光學裝置之封裝結構之整體體積與尺寸。另外,將多層膜設置於感光元件上,除了可減少雜散光傳遞至感光元件的機會外,亦可縮小光學裝置之封裝結構之整體體積 與尺寸。再者,透過適當地調整擋光結構的設計,除了可縮小光學裝置之封裝結構之整體體積與尺寸外,還可降低製作成本與製作困難度。
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。另外本發明的任一實施例或申請專利範圍不須達成本發明所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本發明之權利範圍。
100‧‧‧近接式光感測器
101‧‧‧物體
110‧‧‧發光源
120‧‧‧光偵測器
130‧‧‧封裝殼體
132‧‧‧第一容置空間
134‧‧‧第二容置空間
136‧‧‧遮光結構
200~800‧‧‧光學裝置之封裝結構
201‧‧‧物體
210‧‧‧基板
220‧‧‧發光元件
230‧‧‧感光元件
232‧‧‧導電材料
240、410、710、710’‧‧‧擋光結構
310‧‧‧多層膜
412‧‧‧擋光蓋
412a、714a‧‧‧開口
610‧‧‧分隔牆
712、712’‧‧‧透光材料層
714、714’‧‧‧遮光材料層
712a‧‧‧內側
712b‧‧‧外側
L1‧‧‧光束
L1’‧‧‧光束
θ‧‧‧入射角
N1‧‧‧法線
圖1為習知之一種近接式光感測器之封裝結構的剖面示意圖。
圖2為本發明一實施例之光學裝置之封裝結構的示意圖。
圖3A為本發明另一實施例之光學裝置之封裝結構的示意圖。
圖3B為圖3A之光學裝置之封裝結構的局部放大圖。
圖4為本發明又一實施例之光學裝置之封裝結構的示意圖。
圖5為本發明再一實施例之光學裝置之封裝結構的示意圖。
圖6為本發明更一實施例之光學裝置之封裝結構的示意圖。
圖7為本發明還一實施例之光學裝置之封裝結構的示意圖。
圖8為本發明尚一實施例之光學裝置之封裝結構的示意圖。
200‧‧‧光學裝置之封裝結構
201‧‧‧物體
210‧‧‧基板
220‧‧‧發光元件
230‧‧‧感光元件
232‧‧‧導電材料
240‧‧‧擋光結構
L1‧‧‧光束
L1’‧‧‧光束

Claims (8)

  1. 一種光學裝置之封裝結構,包括:一基板;一發光元件,配置於該基板上並與該基板電性連接,且該發光元件適於提供一光束;一感光元件,配置於該基板上,且該感光元件為一晶片尺寸封裝元件(chip scale package,CSP),其中該感光元件適於接收被一物體反射後之該光束;以及一擋光結構,設置於該感光元件之周邊,其中該擋光結構實體連接該感光元件。
  2. 如申請專利範圍第1項所述之光學裝置之封裝結構,更包括:一多層膜,設置於該感光元件上,其中被該物體反射後之至少部分該光束適於通過該多層膜而傳遞至該感光元件。
  3. 如申請專利範圍第2項所述之光學裝置之封裝結構,其中該擋光結構包括:一擋光蓋,位於該感光元件上方並具有一開口,其中被該物體反射後之至少部分該光束適於通過該開口而傳遞至該感光元件。
  4. 如申請專利範圍第3項所述之光學裝置之封裝結構,其中該開口暴露出部分該多層膜。
  5. 如申請專利範圍第3項所述之光學裝置之封裝結構,更包括:一分隔牆,配置於該基板上並位於該感光元件與該發光元件之間。
  6. 如申請專利範圍第2項所述之光學裝置之封裝結構,其中被該物體反射後之至少部分該光束入射至該多層膜之入射角若小於一預定角度,則該光束適於通過該多層膜而傳遞至該感光元件。
  7. 如申請專利範圍第1項所述之光學裝置之封裝結構,其中該擋光結構包括一透光材料層與一遮光材料層,該透光材料層之一側與該感光元件實體連接,而該透光材料層之另一側則與該遮光材料層實體接觸。
  8. 如申請專利範圍第7項所述之光學裝置之封裝結構,其中該透光材料層覆蓋該感光元件,且該遮光材料層具有一開口,以暴露出部分該透光材料層,且被該物體反射後之至少部分該光束適於通過該開口而傳遞至該感光元件。
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