TWI466596B - Plasma processing apparatus (1) - Google Patents
Plasma processing apparatus (1) Download PDFInfo
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- TWI466596B TWI466596B TW100126419A TW100126419A TWI466596B TW I466596 B TWI466596 B TW I466596B TW 100126419 A TW100126419 A TW 100126419A TW 100126419 A TW100126419 A TW 100126419A TW I466596 B TWI466596 B TW I466596B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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Description
本發明主張於2011年2月22日申請，案號為第10-2011-0015600號的韓國專利申請案的優先權的益處，此案在本文以引用之方式全部併入。The present invention claims the benefit of priority to the Korean Patent Application No. 10-2011-0015600, filed on Feb. 22, 2011, which is hereby incorporated by reference.
本發明提供一種電漿製程設備，且更特定言之，本發明係關於在電容耦合電漿(CCP)設備中改良無線電頻率轉換的效率的電漿製程設備。The present invention provides a plasma processing apparatus and, more particularly, to a plasma processing apparatus for improving the efficiency of radio frequency conversion in a capacitively coupled plasma (CCP) apparatus.
一般而言，電漿製程設備已廣泛地被使用於電漿化學氣相沈積設備、電漿噴鍍設備、電漿蝕刻設備、電漿離子注射及參雜設備等等之中，以在基板上形成薄膜。In general, plasma processing equipment has been widely used in plasma chemical vapor deposition equipment, plasma spraying equipment, plasma etching equipment, plasma ion injection and impurity equipment, etc., on the substrate. A film is formed.
提到產生電漿的方法，存在各種方法，例如電容耦合電漿(CCP)方法、電感耦合電漿(ICP)方法、電子迴旋共振(ECR)電漿方法、微波電漿方法等等。With regard to the method of producing plasma, various methods exist, such as a capacitively coupled plasma (CCP) method, an inductively coupled plasma (ICP) method, an electron cyclotron resonance (ECR) plasma method, a microwave plasma method, and the like.
在此等產生電漿的方法之中，用於產生CCP的設備包括上部電極及下部電極，且包括絕緣材料及底座板在下部電極的下方。Among the methods of generating plasma, the apparatus for generating a CCP includes an upper electrode and a lower electrode, and includes an insulating material and a base plate below the lower electrode.
然而，底座板及下部電極大多以平行的平板形成。所以，底座板及下部電極可供應作為電容且產生非預期的電場。此電場阻礙了從底座板的底部至下部電極所施加的無線電頻率(RF)流，從而降低RF轉換的效率。However, the base plate and the lower electrode are mostly formed in parallel flat plates. Therefore, the base plate and the lower electrode can be supplied as a capacitor and generate an unexpected electric field. This electric field impedes the radio frequency (RF) flow applied from the bottom to the lower electrode of the base plate, thereby reducing the efficiency of RF conversion.
因此，本發明之構想為解決以上的問題，且本發明的一態樣係提供一電漿製程設備，其中在下部電極的下方的底座板及在底座板上的下部電極或冷卻板係彼此傾斜的，使得提供至下部電極的無線電頻率(RF)之轉換效率可被改良。Accordingly, the present invention is directed to solving the above problems, and an aspect of the present invention provides a plasma processing apparatus in which a base plate below a lower electrode and a lower electrode or a cooling plate on the base plate are inclined to each other The conversion efficiency of the radio frequency (RF) supplied to the lower electrode can be improved.
在一態樣中，一電漿製程設備包括：腔室；上部電極，該上部電極係提供於該腔室的上部部分；下部電極，該下部電極係提供於該腔室的下部部分，該下部電極位於與該上部電極相對的位置；絕緣板，該絕緣板係安置於該下部電極的下方；及底座板，該底座板係提供於該絕緣板的下方，且該底座板經安置使得介於該下部電極及該底座板之間的間隔可為錐形的。In one aspect, a plasma processing apparatus includes: a chamber; an upper electrode, the upper electrode is provided in an upper portion of the chamber; and a lower electrode is provided in a lower portion of the chamber, the lower portion The electrode is located opposite to the upper electrode; the insulating plate is disposed below the lower electrode; and the base plate is provided under the insulating plate, and the base plate is disposed to be disposed The spacing between the lower electrode and the base plate may be tapered.
電漿製程設備可進一步包含冷卻板介於下部電極及絕緣板之間，且與絕緣板接觸的冷卻板的表面係形成為錐形的，使得冷卻板的中央部分及四周部分的厚度係不同的。The plasma processing apparatus may further include a cooling plate interposed between the lower electrode and the insulating plate, and a surface of the cooling plate contacting the insulating plate is formed in a tapered shape such that a thickness of a central portion and a peripheral portion of the cooling plate are different. .
冷卻板的中央部分可比四周部分更厚。冷卻板的中央部分可比四周部分更薄。與絕緣板接觸的底座板的表面係形成為錐形的，使得底座板的中央部分及四周部分的厚度係不同的。底座板的中央部分可比四周部分更厚。底座板的中央部分可比四周部分更薄。絕緣板可包含第一絕緣板及第二絕緣板，其中該第一絕緣板包含Teflon材料，該第二絕緣板係堆疊至該第一絕緣板的底部且該第二絕緣板包含陶瓷材料。第二絕緣板在側面方向可比第一絕緣板更加延伸。第一絕緣板及第二絕緣板與彼此接觸之表面可以非對稱傾斜的圖案形成。The central portion of the cooling plate can be thicker than the surrounding portion. The central portion of the cooling plate can be thinner than the surrounding portion. The surface of the base plate that is in contact with the insulating plate is formed in a tapered shape such that the thickness of the central portion and the peripheral portion of the base plate are different. The central portion of the base plate can be thicker than the surrounding portion. The central portion of the base plate can be thinner than the surrounding portion. The insulating plate may include a first insulating plate and a second insulating plate, wherein the first insulating plate includes a Teflon material, the second insulating plate is stacked to a bottom of the first insulating plate, and the second insulating plate includes a ceramic material. The second insulating plate may extend more in the side direction than the first insulating plate. The surfaces of the first insulating plate and the second insulating plate that are in contact with each other may be formed in an asymmetrically inclined pattern.
如上所述，在根據本發明的示例性實施例的電漿製程設備中，冷卻板(或下部電極)及底座板位於絕緣板上方及下方，而將絕緣板夾於其中，該冷卻板(或下部電極)及該底座板並非平行的，而為彼此傾斜的，使得提供至下部電極的RF流可最大化地防止損失，該損失係由冷卻板及底座板之間所產生的電場所造成，從而改良RF轉換的效率。As described above, in the plasma processing apparatus according to the exemplary embodiment of the present invention, the cooling plate (or the lower electrode) and the base plate are located above and below the insulating plate, and the insulating plate is sandwiched therein, the cooling plate (or The lower electrode) and the base plate are not parallel, but are inclined to each other such that the RF flow provided to the lower electrode maximizes loss prevention caused by an electrical field generated between the cooling plate and the base plate. Thereby improving the efficiency of RF conversion.
透過參考隨附圖式的示例性實施例的詳細說明，本發明將更為顯而易見，且技術領域中之一般技術者可輕易地瞭解本發明的技術思想。而且，若決定在詳細說明中關於本發明的大眾已知的技術可使得本發明的主要思想變得模糊，則該詳細說明將被省略。The present invention will be more apparent from the detailed description of the exemplary embodiments of the drawings, and the technical idea of the invention can be easily understood by those of ordinary skill in the art. Moreover, if it is decided that the main idea of the present invention may be obscured by the technique known to the public in the detailed description, the detailed description will be omitted.
以下，本發明的示例性實施例將參考隨附圖式而詳細說明。Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
第1圖係根據本發明的第一示例性實施例圖示一電漿製程設備的視圖。如第1圖所圖示，根據本發明的第一示例性實施例的電漿製程設備包括腔室100，該腔室100內部提供反應腔室。腔室100的頂部或底部被接地。1 is a view illustrating a plasma processing apparatus according to a first exemplary embodiment of the present invention. As illustrated in FIG. 1, a plasma processing apparatus according to a first exemplary embodiment of the present invention includes a chamber 100 that internally provides a reaction chamber. The top or bottom of the chamber 100 is grounded.
上部電極110係提供於腔室100的上部部分，且下部電極130係提供於腔室100的下部部分。上部電極110可與接地電極或匹配單元連接。The upper electrode 110 is provided in an upper portion of the chamber 100, and the lower electrode 130 is provided in a lower portion of the chamber 100. The upper electrode 110 can be connected to a ground electrode or a matching unit.
再者，上部電極110係提供氣體供應單元120，以供應製程氣體用於激發電漿且進行製程。儘管未圖示，連接至氣體供應單元120的上部電極110可具有噴淋頭結構，使得製程氣體可均勻地供應至反應腔室的內部。Furthermore, the upper electrode 110 is provided with a gas supply unit 120 for supplying a process gas for exciting the plasma and performing a process. Although not illustrated, the upper electrode 110 connected to the gas supply unit 120 may have a showerhead structure such that the process gas may be uniformly supplied to the inside of the reaction chamber.
下部電極130係提供於腔室100的下部部分。儘管未圖示，靜電夾頭(electrostatic chuck，ESC)可提供於下部電極130上。因此，接受電漿製程的基板係坐落於ESC上。The lower electrode 130 is provided in a lower portion of the chamber 100. Although not shown, an electrostatic chuck (ESC) may be provided on the lower electrode 130. Therefore, the substrate subjected to the plasma process is located on the ESC.
同時，冷卻板140係提供於下部電極130的下方。冷卻板140與通道142連接，而冷媒流通過該通道142，且冷媒管道143與通道142連接且循環從外部供應的冷媒。冷卻板140供以冷卻下部電極130，且當基板接受電漿製程時，冷卻板140防止下部電極被加熱於預設溫度或更高溫度。At the same time, the cooling plate 140 is provided below the lower electrode 130. The cooling plate 140 is connected to the passage 142, and the refrigerant flow passes through the passage 142, and the refrigerant pipe 143 is connected to the passage 142 and circulates the refrigerant supplied from the outside. The cooling plate 140 is provided to cool the lower electrode 130, and when the substrate is subjected to a plasma process, the cooling plate 140 prevents the lower electrode from being heated to a preset temperature or higher.
因此被使用作為冷媒的氦氣及其他冷卻氣體可供應至冷卻板140的通道142，或者水或類似的液體冷媒可供應至通道142。再者，絕緣板150、151係提供於冷卻板140的下方，且底座板160係提供於絕緣板150、151的下方。此處，底座板160被接地。Therefore, helium gas and other cooling gas used as a refrigerant may be supplied to the passage 142 of the cooling plate 140, or water or the like liquid refrigerant may be supplied to the passage 142. Furthermore, the insulating plates 150, 151 are provided below the cooling plate 140, and the base plate 160 is provided below the insulating plates 150, 151. Here, the base plate 160 is grounded.
絕緣板150、151包括位於冷卻板140下方的第一絕緣板150，及第二絕緣板151，該第二絕緣板151堆疊且位於絕緣板150下方。第一絕緣板150可以強化的Teflon製成，例如聚四氟乙烯(PTFE)，且第二絕緣板151以陶瓷製成。The insulating plates 150, 151 include a first insulating plate 150 under the cooling plate 140, and a second insulating plate 151 stacked and below the insulating plate 150. The first insulating sheet 150 may be made of reinforced Teflon, such as polytetrafluoroethylene (PTFE), and the second insulating sheet 151 is made of ceramic.
同時，第二絕緣板151的側面部分比第一絕緣板150的側面部分在寬度上更加延伸。隨著第二絕緣板151的成形，在基板所坐落的板四周的電磁場變得較弱，且因此能夠防止寄生電漿在板的四周產生。At the same time, the side portion of the second insulating sheet 151 extends more in width than the side portion of the first insulating sheet 150. As the second insulating sheet 151 is formed, the electromagnetic field around the board in which the substrate sits is weakened, and thus it is possible to prevent the parasitic plasma from being generated around the board.
而且，用於提供RF至下部電極130的RF施加線180係延伸穿透底座板160、絕緣板150及151及冷卻板140，且安裝孔170係從底座板160向上穿透至下部電極130的底部而形成，以便安置RF施加線180。再者，絕緣材料190係在安裝孔170之中提供於RF施加線180的內部四周。Moreover, the RF application line 180 for providing RF to the lower electrode 130 extends through the base plate 160, the insulating plates 150 and 151, and the cooling plate 140, and the mounting hole 170 penetrates upward from the base plate 160 to the lower electrode 130. A bottom is formed to accommodate the RF application line 180. Further, an insulating material 190 is provided around the inside of the RF application line 180 in the mounting hole 170.
同時，與下部電極130接觸的冷卻板140的頂部表面係平坦的，但冷卻板140的底部表面141係傾斜的。此形狀造成冷卻板140的中央部分較薄且冷卻板140的四周部分較厚。At the same time, the top surface of the cooling plate 140 in contact with the lower electrode 130 is flat, but the bottom surface 141 of the cooling plate 140 is inclined. This shape causes the central portion of the cooling plate 140 to be thin and the peripheral portion of the cooling plate 140 to be thick.
而且，與絕緣板150、151接觸的底座板160的頂部表面161係傾斜的，但底座板160的底部表面係平坦的。所以，底座板160具有薄的中央部分及厚的四周部分。Moreover, the top surface 161 of the base plate 160 that is in contact with the insulating plates 150, 151 is inclined, but the bottom surface of the base plate 160 is flat. Therefore, the base plate 160 has a thin central portion and a thick peripheral portion.
亦即，冷卻板140及底座板160並非平行板的結構，但為彼此傾斜的，使得介於冷卻板140及底座板160之間的間隔可被形成為錐形的。此處，傾斜的角度θ可為從5度至45度的範圍。That is, the cooling plate 140 and the base plate 160 are not parallel plate structures, but are inclined to each other such that the interval between the cooling plate 140 and the base plate 160 can be formed into a tapered shape. Here, the angle θ of the inclination may be a range from 5 degrees to 45 degrees.
因為冷卻板140及底座板160並非平行而為彼此傾斜的，所以RF能量轉換的效率可藉由在冷卻板140及底座板160之間產生的電場而被最低限度地降低。Since the cooling plate 140 and the base plate 160 are not inclined parallel to each other, the efficiency of RF energy conversion can be minimized by the electric field generated between the cooling plate 140 and the base plate 160.
換言之，若冷卻板140及底座板160係彼此平行而具有絕緣板150、151介於其中，冷卻板140及底座板160可操作為電容的類型。In other words, if the cooling plate 140 and the base plate 160 are parallel to each other with the insulating plates 150, 151 interposed therebetween, the cooling plate 140 and the base plate 160 can operate as a type of capacitor.
在此情況中，電場係形成於冷卻板140及底座板160之間，且電場妨礙流向下部電極130的RF，從而降低RF轉換的效率。在傳統的CCP製程設備中，顯示RF轉換效率的30%的損失係由產生於冷卻板及底座板之間的電場所造成。In this case, an electric field is formed between the cooling plate 140 and the base plate 160, and the electric field hinders the RF flowing to the lower electrode 130, thereby reducing the efficiency of RF conversion. In conventional CCP process equipment, a 30% loss in RF conversion efficiency is shown to result from the electrical location created between the cooling plate and the base plate.
為了減少RF轉換效率的損失，RF供應功率的強度可被增加。然而，若增加RF供應功率的強度，則在以介電材料製成的絕緣板150、151中的極化電流亦變得更大。因此，增加RF供應功率係無效的。In order to reduce the loss of RF conversion efficiency, the intensity of the RF supply power can be increased. However, if the intensity of the RF supply power is increased, the polarization current in the insulating plates 150, 151 made of a dielectric material also becomes larger. Therefore, increasing the RF supply power is ineffective.
因此，根據本發明的一示例性實施例，介於冷卻板140及底座板160之間的間隔係形成為部分變得較寬或較窄，從而最小化RF轉換效率的損失。Therefore, according to an exemplary embodiment of the present invention, the interval between the cooling plate 140 and the base plate 160 is formed to be partially wider or narrower, thereby minimizing the loss of RF conversion efficiency.
在介於冷卻板140及底座板160之間的間隔變得較寬的情況下，介於冷卻板140及底座板160之間的電容，隨著如下式1所顯示的間隔的一加寬的距離，而變得較弱，從而弱化電場。In the case where the interval between the cooling plate 140 and the base plate 160 becomes wider, the capacitance between the cooling plate 140 and the base plate 160 is a widened interval as shown by the following Equation 1. The distance becomes weaker, thereby weakening the electric field.
「等式1」"Equation 1"
C =ε╳(A /d ) C = ε╳( A / d )
(其中，ε：介電常數，A：電極的相對面積，及d：介於電極之間的距離)(where ε: dielectric constant, A: relative area of the electrode, and d: distance between the electrodes)
因此，RF轉換效率的損失可藉由將冷卻板140及底座板160彼此隔離相距更遠而減少。Therefore, the loss of RF conversion efficiency can be reduced by isolating the cooling plate 140 and the base plate 160 from each other further apart.
同時，隨著介於冷卻板140及底座板160之間的間隔變得更寬，一部分介於冷卻板140及底座板160之間的間隔變得更窄。在此窄的部分中，發生極化電流被集中的現象，亦即，電荷被集中。At the same time, as the interval between the cooling plate 140 and the base plate 160 becomes wider, a portion of the interval between the cooling plate 140 and the base plate 160 becomes narrower. In this narrow portion, a phenomenon in which polarization current is concentrated, that is, charges are concentrated.
然而，此電荷的集中造成電場匹配至靜止波。此靜止波稱為駐波，其中來自冷卻板140及底座板160的相對表面所反射，且以彼此相反的方向傳播的相對電磁波的交流分量，係被抵銷。所以，RF轉換效率在窄的間隔中藉由靜止波而未被降低。However, this concentration of charge causes the electric field to match to the stationary wave. This stationary wave is referred to as a standing wave in which the opposing surfaces from the cooling plate 140 and the base plate 160 are reflected, and the AC component of the relative electromagnetic waves propagating in opposite directions to each other is cancelled. Therefore, the RF conversion efficiency is not lowered by the stationary wave in a narrow interval.
為了作成靜止波，需要根據冷卻板140及底座板160的面積及厚度，而調整較窄部分的間隔中的設計。此間隔的設計可取決於裝備的規模及電極的面積而多方面地被調整。In order to create a stationary wave, it is necessary to adjust the design in the interval between the narrow portions depending on the area and thickness of the cooling plate 140 and the base plate 160. The design of this interval can be adjusted in many ways depending on the size of the equipment and the area of the electrodes.
如上所述，在根據第一示例性實施例的電漿製程設備中，介於冷卻板140及底座板160之間的間隔在該間隔中央部分變得較寬，且在該間隔四周部分變得較窄，且中央部分朝向四周部分而傾斜。As described above, in the plasma processing apparatus according to the first exemplary embodiment, the interval between the cooling plate 140 and the base plate 160 becomes wider at the central portion of the interval, and becomes partially around the interval. It is narrow and the central portion is inclined toward the surrounding portion.
再者，***冷卻板140及底座板160之間的絕緣板150係經成型而相對應於介於冷卻板140及底座板160之間的間隔。Furthermore, the insulating plate 150 inserted between the cooling plate 140 and the base plate 160 is shaped to correspond to the interval between the cooling plate 140 and the base plate 160.
或者，介於冷卻板及底座板之間的間隔可有變化地傾斜。Alternatively, the spacing between the cooling plate and the base plate may be variably inclined.
第2圖係根據本發明的第二示例性實施例圖示一電漿製程設備的視圖，第3圖係根據本發明的第三示例性實施例圖示一電漿製程設備的視圖，第4圖係根據本發明的第四示例性實施例圖示一電漿製程設備的視圖，且第5圖係根據本發明的第五示例性實施例圖示一電漿製程設備的視圖。2 is a view illustrating a plasma processing apparatus according to a second exemplary embodiment of the present invention, and FIG. 3 is a view illustrating a plasma processing apparatus according to a third exemplary embodiment of the present invention, 4th The drawing illustrates a view of a plasma processing apparatus according to a fourth exemplary embodiment of the present invention, and FIG. 5 illustrates a view of a plasma processing apparatus according to a fifth exemplary embodiment of the present invention.
在第2圖中，冷卻板240的底部表面係傾斜的，底座板260的頂部表面係形成為平坦的，且第一絕緣板250及第二絕緣板251係形成為相對應於冷卻板240的底部形狀。在第2圖的情況中，冷卻板240及底座板260之間的間隔亦形成為倒V的形狀。再者，若第二示例性實施例的錐形的角度比第一示例性實施例的錐形的角度更大，則此設計可為更有效率。In FIG. 2, the bottom surface of the cooling plate 240 is inclined, the top surface of the base plate 260 is formed flat, and the first insulating plate 250 and the second insulating plate 251 are formed to correspond to the cooling plate 240. Bottom shape. In the case of Fig. 2, the interval between the cooling plate 240 and the base plate 260 is also formed into an inverted V shape. Furthermore, if the angle of the taper of the second exemplary embodiment is larger than the angle of the taper of the first exemplary embodiment, this design may be more efficient.
在第3圖的第三示例性實施例中，介於冷卻板340及底座板360之間的間隔，在中央部分變得較窄，且在四周部分變得較寬，且第一絕緣板350及第二絕緣板351被形成為相對應於冷卻板340及底座板360的形狀。同樣地，此配置可促成改良RF轉換的效率。In the third exemplary embodiment of FIG. 3, the interval between the cooling plate 340 and the base plate 360 becomes narrower at the central portion, and becomes wider at the peripheral portion, and the first insulating plate 350 The second insulating plate 351 is formed in a shape corresponding to the cooling plate 340 and the base plate 360. As such, this configuration can result in improved efficiency of RF conversion.
在第4圖的第四示例性實施例中，相對於第3圖，僅冷卻板440的底部表面係傾斜的，底座板460的頂部表面係形成為平坦的，且第一絕緣板450及第二絕緣板451係形成為相對應於冷卻板440的形狀。在第4圖的情況中，介於冷卻板440及底座板460之間的間隔亦形成為V的形狀，且此設計因此能夠最小化RF轉換效率的損失。In the fourth exemplary embodiment of FIG. 4, with respect to FIG. 3, only the bottom surface of the cooling plate 440 is inclined, the top surface of the base plate 460 is formed to be flat, and the first insulating plate 450 and the first The two insulating plates 451 are formed in a shape corresponding to the cooling plate 440. In the case of Fig. 4, the interval between the cooling plate 440 and the base plate 460 is also formed into a V shape, and this design can therefore minimize the loss of RF conversion efficiency.
在第5圖的第五示例性實施例中，突出而傾斜向下的突起形成於冷卻板540的底部表面的至少兩個點，形成第二絕緣板551的中央部分而具有鑽石的形狀，延伸鑽石形狀的周圍以具有大致三角形的形狀。再者，第一絕緣板550係填充於第二絕緣板551及冷卻板540之間。在第5圖的情況中，介於冷卻板540及底座板560之間的間隔包括複數個錐形的部分，使得RF轉換效率的損失可被減少。In the fifth exemplary embodiment of FIG. 5, the protrusions protruding obliquely downward are formed at at least two points of the bottom surface of the cooling plate 540, forming a central portion of the second insulating plate 551 to have a diamond shape, extending The shape of the diamond is surrounded by a substantially triangular shape. Furthermore, the first insulating sheet 550 is filled between the second insulating sheet 551 and the cooling plate 540. In the case of Fig. 5, the interval between the cooling plate 540 and the base plate 560 includes a plurality of tapered portions, so that the loss of RF conversion efficiency can be reduced.
在上述本發明的示例性實施例中，冷卻板140、240、340、440、540及底座板160、260、360、460、560位於絕緣板150的上方及下方，而將絕緣板150夾於其中，該冷卻板140、240、340、440、540及該底座板160、260、360、460、560並非平行，而以各種方法彼此傾斜，使得提供至下部電極的RF轉換可最大化地防止損失，該損失係由介於冷卻板140、240、340、440、540及底座板160、260、360、460、560之間所產生的電場而造成，從而改良RF轉換的效率且以高的效率提供電漿製程設備。本發明的此等示例性實施例係更有效率地可用於電容耦合電漿(CCP)製程設備。In the above exemplary embodiment of the present invention, the cooling plates 140, 240, 340, 440, 540 and the base plates 160, 260, 360, 460, 560 are located above and below the insulating plate 150, and the insulating plate 150 is sandwiched Wherein, the cooling plates 140, 240, 340, 440, 540 and the base plates 160, 260, 360, 460, 560 are not parallel, but are inclined to each other in various ways, so that RF conversion provided to the lower electrode can be prevented to the maximum Loss, which is caused by the electric field generated between the cooling plates 140, 240, 340, 440, 540 and the base plates 160, 260, 360, 460, 560, thereby improving the efficiency of RF conversion and high efficiency Provide plasma processing equipment. These exemplary embodiments of the present invention are more efficiently applicable to capacitively coupled plasma (CCP) process equipment.
儘管已參考此處的示例性實施例特別圖示且說明本發明，但熟習該項技術者應瞭解可對形式及細節作成各種改變，而不悖離由隨附申請專利範圍所界定的本發明的精神及範疇。示例性實施例應僅考慮為說明之用而非限制的目的。所以，本發明的範疇並非由本發明的實施方式所界定，但由隨附的申請專利範圍所界定，且在範疇之中的所有差別將被理解為包括於本發明之中。Although the present invention has been particularly shown and described with reference to the exemplary embodiments of the present invention, it will be understood by those skilled in the art Spirit and scope. The exemplary embodiments should be considered for purposes of illustration and not limitation. Therefore, the scope of the invention is not to be construed as being limited by the scope of the invention, but the scope of the invention is defined by the appended claims.
100．．．腔室100. . . Chamber
110．．．上部電極110. . . Upper electrode
120．．．氣體供應單元120. . . Gas supply unit
130．．．下部電極130. . . Lower electrode
140．．．冷卻板140. . . Cooling plate
141．．．底部表面141. . . Bottom surface
142．．．通道142. . . aisle
143．．．冷媒管道143. . . Refrigerant pipe
150．．．絕緣板150. . . Insulation board
151．．．絕緣板151. . . Insulation board
160．．．底座板160. . . Base plate
161．．．頂部表面161. . . Top surface
170．．．安裝孔170. . . Mounting holes
180．．．RF施加線180. . . RF application line
190．．．絕緣材料190. . . Insulation Materials
240．．．冷卻板240. . . Cooling plate
250．．．第一絕緣板250. . . First insulation board
251．．．第二絕緣板251. . . Second insulation board
260．．．底座板260. . . Base plate
340．．．冷卻板340. . . Cooling plate
350．．．第一絕緣板350. . . First insulation board
351．．．第二絕緣板351. . . Second insulation board
360．．．底座板360. . . Base plate
440．．．冷卻板440. . . Cooling plate
450．．．第一絕緣板450. . . First insulation board
451．．．第二絕緣板451. . . Second insulation board
460．．．底座板460. . . Base plate
540．．．冷卻板540. . . Cooling plate
550．．．第一絕緣板550. . . First insulation board
551．．．第二絕緣板551. . . Second insulation board
560．．．底座板560. . . Base plate
第1圖係根據本發明的第一示例性實施例圖示一電漿製程設備的視圖。1 is a view illustrating a plasma processing apparatus according to a first exemplary embodiment of the present invention.
第2圖係根據本發明的第二示例性實施例圖示一電漿製程設備的視圖。Fig. 2 is a view showing a plasma processing apparatus according to a second exemplary embodiment of the present invention.
第3圖係根據本發明的第三示例性實施例圖示一電漿製程設備的視圖。Figure 3 is a view illustrating a plasma processing apparatus in accordance with a third exemplary embodiment of the present invention.
第4圖係根據本發明的第四示例性實施例圖示一電漿製程設備的視圖。Fig. 4 is a view showing a plasma processing apparatus according to a fourth exemplary embodiment of the present invention.
第5圖係根據本發明的第五示例性實施例圖示一電漿製程設備的視圖。Fig. 5 is a view showing a plasma processing apparatus according to a fifth exemplary embodiment of the present invention.
100．．．腔室100. . . Chamber
110．．．上部電極110. . . Upper electrode
120．．．氣體供應單元120. . . Gas supply unit
130．．．下部電極130. . . Lower electrode
140．．．冷卻板140. . . Cooling plate
141．．．底部表面141. . . Bottom surface
142．．．通道142. . . aisle
143．．．冷媒管道143. . . Refrigerant pipe
150．．．絕緣板150. . . Insulation board
151．．．絕緣板151. . . Insulation board
160．．．底座板160. . . Base plate
161．．．頂部表面161. . . Top surface
170．．．安裝孔170. . . Mounting holes
180．．．RF施加線180. . . RF application line
190．．．絕緣材料190. . . Insulation Materials
Claims (10)
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| KR1020110015600A KR101196422B1 (en) | 2011-02-22 | 2011-02-22 | Plasma processing apparatus |
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| TWI466596B true TWI466596B (en) | 2014-12-21 |
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| KR (1) | KR101196422B1 (en) |
| CN (1) | CN102646569B (en) |
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| US20220189746A1 (en) * | 2020-12-16 | 2022-06-16 | Samsung Electronics Co., Ltd. | Semiconductor processing equipment including electrostatic chuck for plasma processing |
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| US10049862B2 (en) * | 2015-04-17 | 2018-08-14 | Lam Research Corporation | Chamber with vertical support stem for symmetric conductance and RF delivery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074298B2 (en) * | 2002-05-17 | 2006-07-11 | Applied Materials | High density plasma CVD chamber |
| US20080129185A1 (en) * | 2006-06-12 | 2008-06-05 | The Board Of Trustees Of The University Of Illinois | Low voltage microcavity plasma device and addressable arrays |
| TW200947583A (en) * | 2007-09-05 | 2009-11-16 | Advanced Display Proc Eng Co | Lower electrode assembly for processing substrates |
| TW201031280A (en) * | 2008-07-23 | 2010-08-16 | Applied Materials Inc | Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring |
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| US6228438B1 (en) * | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
| JP4707588B2 (en) * | 2006-03-16 | 2011-06-22 | 東京エレクトロン株式会社 | Plasma processing apparatus and electrodes used therefor |
| JP5643528B2 (en) * | 2009-03-30 | 2014-12-17 | 東京エレクトロン株式会社 | Substrate processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7074298B2 (en) * | 2002-05-17 | 2006-07-11 | Applied Materials | High density plasma CVD chamber |
| US20080129185A1 (en) * | 2006-06-12 | 2008-06-05 | The Board Of Trustees Of The University Of Illinois | Low voltage microcavity plasma device and addressable arrays |
| TW200947583A (en) * | 2007-09-05 | 2009-11-16 | Advanced Display Proc Eng Co | Lower electrode assembly for processing substrates |
| TW201031280A (en) * | 2008-07-23 | 2010-08-16 | Applied Materials Inc | Workpiece support for a plasma reactor with controlled apportionment of RF power to a process kit ring |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220189746A1 (en) * | 2020-12-16 | 2022-06-16 | Samsung Electronics Co., Ltd. | Semiconductor processing equipment including electrostatic chuck for plasma processing |
| US11862440B2 (en) * | 2020-12-16 | 2024-01-02 | Samsung Electronics Co., Ltd. | Semiconductor processing equipment including electrostatic chuck for plasma processing |
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| KR101196422B1 (en) | 2012-11-01 |
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| CN102646569A (en) | 2012-08-22 |
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