TWI466347B - A light-emitting element having a high heat dissipation characteristic, and a light-emitting element manufactured by the method - Google Patents
A light-emitting element having a high heat dissipation characteristic, and a light-emitting element manufactured by the method Download PDFInfo
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Description
本發明是有關於一種發光元件的製作方法及以該方法製作出的發光元件，特別是指一種用發光二極體晶片(LED Chip)作為發光光源的發光元件的製作方法及以該方法製作出的發光元件。The present invention relates to a method for fabricating a light-emitting device and a light-emitting device produced by the method, and more particularly to a method for fabricating a light-emitting device using a light-emitting diode chip (LED chip) as a light-emitting source and manufacturing the method Light-emitting elements.
參閱圖1，一般而言，採用發光二極體晶片100作為發光光源的發光元件1包含一可導熱並與外界電連接的基板11、該在提供電能時產生光的發光二極體晶片100，及一位於該基板11和該發光二極體晶片100之間而用以將該發光二極體晶片100黏設於該基板11上的接合材12。Referring to FIG. 1, in general, a light-emitting element 1 using a light-emitting diode chip 100 as a light-emitting source includes a substrate 11 that is thermally conductive and electrically connected to the outside, and a light-emitting diode chip 100 that generates light when power is supplied. And a bonding material 12 between the substrate 11 and the LED wafer 100 for bonding the LED wafer 100 to the substrate 11.
當自外界對該發光二極體晶片100提供電能時，該發光二極體晶片100以光電效應作動發光，其中，該發光二極體晶片100發出的光主要經過一主要發光面101而向上射出至外界，部分自側周面102漏出的光則散逸，或再經過該基板11形態的設計而反射後實質朝所需的方向，例如向上行進，同時，該發光二極體晶片100作動時所產生的廢熱則經過該接合材12、該基板11而導離該發光二極體晶片100本身，從而避免因廢熱而使溫度過高影響到該發光二極體晶片100的電子-電洞復合機制，進而縮短整體發光元件1的工作壽命。When the light emitting diode 100 is supplied with electric energy from the outside, the light emitting diode chip 100 emits light by a photoelectric effect, wherein the light emitted by the light emitting diode chip 100 is mainly emitted through a main light emitting surface 101. To the outside, part of the light leaking from the side peripheral surface 102 is dissipated, or is further reflected by the design of the substrate 11 and substantially reflected in a desired direction, for example, upward, and simultaneously generated when the LED chip 100 is activated. The waste heat is conducted away from the LED body 100 through the bonding material 12 and the substrate 11, thereby avoiding the excessive temperature influence of the electron-hole recombination mechanism of the LED wafer 100 due to waste heat. Further, the operational life of the entire light-emitting element 1 is shortened.
另外，目前的發光元件1則是透過封裝製程，也就是分別製作出該發光二極體晶片100和基板11後，再將該發光 二極體晶片100藉接合材12黏固於該基板11上而製作得到。In addition, the current light-emitting element 1 is processed through a packaging process, that is, after the light-emitting diode wafer 100 and the substrate 11 are separately fabricated, and then the light-emitting device is used. The diode wafer 100 is produced by bonding the bonding material 12 to the substrate 11.
無論就結構，或是封裝製程而言，上述的發光元件1確實可以滿足目前的生產或是實際應用需求，但是，這類發光元件1在構造上皆因採用該接合材12將該發光二極體晶片100黏固於該基板11，因而熱傳導會受限於層體間的接觸界面及各層體不同的熱傳導係數等因素，直接影響到發光元件1的發光表現與工作壽命，且該接合材12會掩覆該發光二極體晶片100的側周面102，而影響到該發光二極體晶片100自該側周面102漏出的光量，同時，在進行以該接合材12黏固該發光二極體晶片100的作業過程中，接合材12極易因為堆擠、壓置而形成孔洞(voids)，進而破壞熱傳導的介面，大幅影響散熱功效，進而導致元件1的工作壽命提早結束。Regardless of the structure or the packaging process, the above-mentioned light-emitting element 1 can indeed meet the current production or practical application requirements. However, such a light-emitting element 1 is structurally constructed by using the bonding material 12 to form the light-emitting diode. The bulk wafer 100 is adhered to the substrate 11 , and thus the heat conduction is limited by the contact interface between the layers and the different heat transfer coefficients of the layers, which directly affects the light-emitting performance and the working life of the light-emitting element 1 , and the bonding material 12 The side peripheral surface 102 of the LED wafer 100 is masked, and the amount of light leaking from the side peripheral surface 102 of the LED wafer 100 is affected, and at the same time, the light is adhered by the bonding material 12 During the operation of the polar body wafer 100, the bonding material 12 is extremely easy to form voids due to stacking and pressing, thereby destroying the interface of heat conduction, greatly affecting the heat dissipation effect, and thus the working life of the component 1 is terminated early.
有鑑於此，目前以發光二極體晶片100作為發光光源的發光元件1，無論在結構上或是製作方法上都仍需要改善。In view of this, the light-emitting element 1 using the light-emitting diode wafer 100 as a light-emitting source is still required to be improved in terms of structure or manufacturing method.
因此，本發明之目的，即在提供一種新型態的具有高散熱特性的發光元件的製作方法及該方法製得的發光元件，藉以提供業界一種迥異於現有封裝製程的發光元件的製作方法，同時，改善採用封裝製程製作得到的發光元件的散熱效率，以提昇發光元件的發光表現與工作壽命。Therefore, the object of the present invention is to provide a novel method for fabricating a light-emitting element having high heat dissipation characteristics and a light-emitting element produced by the method, thereby providing a method for fabricating a light-emitting element which is different from the existing packaging process. At the same time, the heat dissipation efficiency of the light-emitting element produced by the packaging process is improved to improve the light-emitting performance and the working life of the light-emitting element.
於是，本發明一種具有高散熱特性的發光元件的製作方法，包含一晶片暫時固置步驟、一犧牲層形成步驟、一導熱 膜形成步驟、一基底形成步驟，及一犧牲層移除步驟。Therefore, the method for fabricating a light-emitting element having high heat dissipation characteristics includes a wafer temporary fixing step, a sacrificial layer forming step, and a heat conduction A film forming step, a substrate forming step, and a sacrificial layer removing step.
該晶片暫時固置步驟將至少一包括一提供電能時自一主要出光面發光的發光二極體晶片以該主要出光面朝向一暫時固定晶粒用的暫時基板而固定於該暫時基板上。The wafer temporary fixing step fixes at least one of the light-emitting diode wafers that emit light from a main light-emitting surface when the power is supplied to the temporary substrate with the main light-emitting surface facing a temporary substrate for temporarily fixing the crystal grains.
該犧牲層形成步驟在該支撐基板上形成一層圍覆該發光二極體晶片側周面且厚度自該發光二極體晶片相反於該主要出光面的底面向該暫時基板方向遞減的犧牲層。The sacrificial layer forming step forms a sacrificial layer on the support substrate that covers a peripheral surface of the light-emitting diode wafer and has a thickness decreasing from a bottom surface of the light-emitting diode wafer opposite to the main light-emitting surface toward the temporary substrate.
該導熱膜形成步驟，以具有高熱傳導係數的材料自該發光二極體晶片的底面與該犧牲層表面向上形成一包括一主膜體及多數埋覆於該主膜體的導熱粒子的導熱膜，其中，該等導熱粒子的粒徑尺度不大於奈米尺度範圍且熱傳導係數較構成該主膜體的熱傳導係數更高。The heat conductive film forming step of forming a heat conductive film including a main film body and a plurality of heat conductive particles buried in the main film body from a bottom surface of the light emitting diode wafer and a surface of the sacrificial layer with a material having a high heat transfer coefficient Wherein the particle size scale of the thermally conductive particles is not greater than the nanometer scale range and the heat transfer coefficient is higher than the heat transfer coefficient constituting the main film body.
該基底形成步驟自該導熱膜向上形成一表面實質平行於該發光二極體晶片底面的基底，製得一由該基底、導熱膜及發光二極體晶片構成且藉該犧牲層與該暫時基板連結的發光元件。The substrate forming step is formed from the heat conductive film to a substrate substantially parallel to the bottom surface of the LED substrate, and a substrate, a heat conductive film and a light emitting diode wafer are formed, and the sacrificial layer and the temporary substrate are formed. Connected light-emitting elements.
該犧牲層移除步驟移除該犧牲層使該發光元件與該暫時基板相分離，得到該發光元件。The sacrificial layer removing step removes the sacrificial layer to separate the light emitting element from the temporary substrate to obtain the light emitting element.
此外，本發明一種具有高散熱特性的發光元件，包含一基底、一導熱膜，及至少一發光二極體晶片。In addition, the present invention has a light-emitting element having high heat dissipation characteristics, comprising a substrate, a heat conductive film, and at least one light-emitting diode wafer.
該基底由具有高熱傳導係數的材料構成，包括一表面界定有一中心區及一環繞該中心區的周圍區的主層體，及一自該主層體的周圍區表面向上增厚形成且其表面的法線與該主層體的中心區表面的法線夾成銳角的環圍層體。The substrate is composed of a material having a high thermal conductivity, and includes a main layer body having a central portion defining a central region and a surrounding region surrounding the central region, and a surface thickened from the surface of the main layer body and having a surface thereof The normal line of the normal layer of the main layer body is an acute angle of the surrounding layer.
該導熱膜自該基底的主層體的中心區和環圍層體的表面向上形成，包括一由具有高熱傳導係數的材料構成的主膜體，及多數散佈於該主膜體中的導熱粒子，該等導熱粒子由熱傳導係數較構成該主膜體的材料的熱傳導係數更高的材料構成，且粒徑尺度不大於奈米尺度範圍。The heat conductive film is formed upward from a central portion of the main layer body of the substrate and a surface of the surrounding layer body, and includes a main film body composed of a material having a high heat transfer coefficient, and a plurality of heat conductive particles dispersed in the main film body The heat conductive particles are composed of a material having a heat transfer coefficient higher than a heat transfer coefficient of a material constituting the main film body, and the particle size scale is not larger than a nanometer scale range.
該發光二極體晶片連接在該導熱膜對應於該中心區的區域，並自外界提供電能時發光。The light emitting diode chip is connected to a region of the heat conductive film corresponding to the central region, and emits light when power is supplied from the outside.
本發明的功效在於：提出一種新的製程直接自發光二極體晶片再加工製作得到一體成型的發光元件，而改善現有封裝製程以黏結材固置發光二極體晶片時易發生的散熱界面被破壞而散熱不佳的問題，同時藉由導熱膜和基底的一體成型更提昇散熱效果，而使得所製作的發光元件具有更佳的發光表現與實際工作壽命。The effect of the invention is to propose a new process for directly processing the self-luminous diode wafer to obtain an integrally formed light-emitting component, and improving the heat dissipation interface which is easy to occur when the existing packaging process fixes the light-emitting diode wafer with the adhesive material. The problem of poor heat dissipation and the heat-dissipating effect of the heat-dissipating film and the substrate are improved, so that the light-emitting element produced has better light-emitting performance and actual working life.
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之一個較佳實施例的詳細說明中，將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.
在本發明被詳細描述之前，要注意的是，在以下的說明內容中，類似的元件是以相同的編號來表示。Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖2、圖3，本發明一種具有高散熱基板的發光元件的製作方法的一第一較佳實施例包含一晶片暫時固置步驟21、一犧牲層形成步驟22、一導熱膜形成步驟23、一基底形成步驟24，及一犧牲層移除步驟25，適用於製作出如圖3所示的具有高散熱特性的發光元件3。Referring to FIG. 2 and FIG. 3, a first preferred embodiment of a method for fabricating a light-emitting device having a high heat dissipation substrate includes a wafer temporary fixing step 21, a sacrificial layer forming step 22, and a heat conductive film forming step 23. A substrate forming step 24 and a sacrificial layer removing step 25 are suitable for fabricating the light-emitting element 3 having high heat dissipation characteristics as shown in FIG.
先參閱圖3，以本發明的較佳實施例製作出的發光元件3包含一基底31、一導熱膜32，及至少一發光二極體晶片100。Referring to FIG. 3, a light-emitting element 3 fabricated in accordance with a preferred embodiment of the present invention includes a substrate 31, a thermally conductive film 32, and at least one light-emitting diode wafer 100.
該基底31以具有高熱傳導係數的材料，例如銅、金、銀、鎳、錫、鈦、白金、鈀、鎢、鉬等單一材料或該等材料之數種組合形式(即合金，或是多層複合疊合)形成，其形成方式請容後再續，包括一表面界定有一中心區301及一環繞該中心區301的周圍區302的主層體311，及一自該主層體311的周圍區302表面向上增厚形成且其表面的法線與該主層體311的中心區表面的法線夾成銳角θ的環圍層體312，較佳的，該環圍層體312的表面成向上凸起平滑曲面，而有利於光的反射。The substrate 31 is made of a material having a high thermal conductivity, such as a single material such as copper, gold, silver, nickel, tin, titanium, platinum, palladium, tungsten, molybdenum, or a combination thereof (ie, an alloy, or a plurality of layers). The composite laminate is formed, and the formation thereof is continued, including a main layer body 311 having a central region 301 and a surrounding region 302 surrounding the central region 301, and a periphery from the main layer body 311. The surface of the region 302 is thickened upwardly and the normal line of the surface thereof is interposed with the normal line of the surface of the central portion of the main layer body 311 at an acute angle θ. Preferably, the surface of the surrounding layer body 312 is formed. The surface is convex upwards to smooth the surface, which is beneficial to the reflection of light.
該導熱膜32自該基底31的主層體311的中心區301和環圍層體312的表面向上形成，包括一由具有高熱傳導係數的材料構成的主膜體321，及多數散佈於該主膜體321中的導熱粒子322，構成該主膜體321的材料是例如銅、金、銀、鋁，等單一材料或該等材料所成的合金，該等導熱粒子322由熱傳導係數較構成該主膜體321的材料的熱傳導係數更高的材料所構成，例如鑽石粉末、奈米碳管、石墨粉等或該等物質的組合構成，且粒徑尺度不大於奈米尺度範圍，在本例中，該等導熱粒子322是鑽石粉末；另外，該導熱膜32的主膜體321的構成材料還可以佐以提升附著性或光反射等的材料，如鎳、鈦、鉭等單一材料或合金材料，而同時有利於附著、光的反射與熱的傳遞，此外，導熱粒子322 亦可以是薄膜樣式形成如鑽石膜、類鑽膜、石墨烯、或其組合的型態，此部分技術細節請容後一併詳述。The heat conductive film 32 is formed upward from the surface of the central region 301 and the surrounding layer body 312 of the main layer body 311 of the substrate 31, and includes a main film body 321 composed of a material having a high heat transfer coefficient, and most of the main film body 321 is dispersed in the main The heat conductive particles 322 in the film body 321 and the material constituting the main film body 321 are a single material such as copper, gold, silver or aluminum, or an alloy formed by the materials, and the heat conductive particles 322 are composed of a heat transfer coefficient. The material of the main film body 321 is composed of a material having a higher heat transfer coefficient, such as a diamond powder, a carbon nanotube, a graphite powder, or the like, or a combination of the materials, and the particle size scale is not larger than the nanometer scale range, in this example. The heat conductive particles 322 are diamond powders. In addition, the constituent material of the main film body 321 of the heat conductive film 32 may also be a material for improving adhesion or light reflection, such as a single material or alloy such as nickel, titanium or tantalum. Material, while at the same time facilitating adhesion, reflection of light and heat transfer, in addition, thermally conductive particles 322 It is also possible to form a film pattern such as a diamond film, a diamond-like film, graphene, or a combination thereof, and the technical details of this part will be described in detail later.
該發光二極體晶片100一體連接在該導熱膜32並對應位於於該中心區301的區域上，包括一自外界提供電能時發光的主要發光面101、一側周面102，及一相反於該主要發光面101的底面103。The light emitting diode chip 100 is integrally connected to the heat conducting film 32 and corresponding to the area of the central area 301, and includes a main light emitting surface 101, a side peripheral surface 102 that emits light when externally supplying electric energy, and a reverse The bottom surface 103 of the main light-emitting surface 101.
當自外界對該發光二極體晶片100提供電能時(一般是再銲打銲線(圖未示出)而透過銲線提供，由於此等技術已為業界所周知，且並非本發明重點所在，故省略之)，該發光二極體100以光電效應產生光，發出的光主要自其主要出光面101向上向外射出，部分經側周面102漏出的光則經對應於該基底31的環圍層體312所成的平滑曲面的態樣而成的導熱膜32而被反射集中後實質朝上行進，因而得以提高發光元件3的整體發光亮度；同時，該發光二極體晶片100作動產生光時所產生的廢熱，則直接透過一體形成的導熱膜32、基底31而導離該發光二極體晶片100本身，特別是該導熱膜32中還含有粒徑為奈米尺度、且熱傳導係數較該主膜體321更高的導熱粒子322，所以更能快速導熱，使該發光二極體晶片100能更穩定、有效的作動，進而提昇發光元件3整體的發光表現與工作壽命。When the light-emitting diode chip 100 is supplied with electrical energy from the outside (generally re-welded wire (not shown) and supplied through the wire, these techniques are well known in the art and are not the focus of the present invention. Therefore, the light-emitting diode 100 generates light by a photoelectric effect, and the emitted light is mainly emitted upward and outward from the main light-emitting surface 101, and some of the light leaked through the side peripheral surface 102 passes through the ring corresponding to the substrate 31. The heat conductive film 32 formed by the smooth curved surface formed by the surrounding body 312 is reflected and concentrated and travels substantially upward, thereby improving the overall light-emitting luminance of the light-emitting element 3; at the same time, the light-emitting diode wafer 100 is activated. The waste heat generated by the light is directly guided away from the light-emitting diode wafer 100 itself through the integrally formed heat conductive film 32 and the substrate 31. In particular, the heat conductive film 32 also has a particle size of nanometer scale and a heat transfer coefficient. The heat conductive particles 322 are higher than the main film body 321 , so that the heat conduction is more rapid, and the light emitting diode chip 100 can be more stably and effectively operated, thereby improving the overall light emitting performance and working life of the light emitting element 3 .
上述具有高散熱特性的發光元件3，在透過以下的製作方法的較佳實施例的詳細說明後，當可更加清楚的明白。The above-described light-emitting element 3 having high heat-dissipating characteristics can be more clearly understood after the detailed description of the preferred embodiment of the following manufacturing method.
參閱圖2、圖4，本發明具有高散熱特性的發光元件的製作方法的較佳實施例是先進行該晶片暫時固置步驟21， 將該發光二極體晶片100以該主要出光面101朝向一暫時固定晶片用的暫時基板41而暫時固定於該暫時基板41上；在本例中是用玻璃基板作為暫時基板41，並以例如蠟42等物(圖未示出)暫時固置。Referring to FIG. 2 and FIG. 4, in a preferred embodiment of the method for fabricating a light-emitting device having high heat dissipation characteristics, the wafer temporary fixing step 21 is performed first. The light-emitting diode wafer 100 is temporarily fixed to the temporary substrate 41 with the main light-emitting surface 101 facing a temporary substrate 41 for temporarily fixing a wafer; in this example, a glass substrate is used as the temporary substrate 41, and for example, The wax 42 or the like (not shown) is temporarily fixed.
參閱圖2、圖5，然後進行犧牲層形成步驟22，以高分子聚合物，例如具感光性之光阻材料，並利用旋轉塗佈之轉速控制的方式在該暫時基板41上形成一層圍覆該塊發光二極體晶片100側周面102的犧牲層43，其中，由於旋轉塗佈的轉速以及光阻材料本身的內聚力之故，可以控制該犧牲層43形成自該發光二極體晶片100的頂緣向該暫時基板41方向的厚度連續並成平滑凹弧面地遞減的態樣。Referring to FIG. 2 and FIG. 5, a sacrificial layer forming step 22 is then performed to form a layer on the temporary substrate 41 by using a polymer, such as a photosensitive photoresist material, and controlling the rotation speed of the spin coating. The sacrificial layer 43 of the peripheral surface 102 of the light-emitting diode wafer 100, wherein the sacrificial layer 43 can be controlled to be formed from the light-emitting diode wafer 100 due to the rotational speed of the spin coating and the cohesive force of the photoresist material itself. The thickness of the top edge in the direction toward the temporary substrate 41 is continuous and decreases in a smooth concave curved surface.
參閱圖2、圖6，接著進行導熱膜形成步驟23，以具有高熱傳導係數的材料(或是同時具有高熱傳導係數與高反射係數的材料)自該發光二極體晶片100的底面103與該犧牲層43表面向上形成該主膜體321，且在該主膜體321堆積形成的過程中散佈該等導熱粒子322於該主膜體321中，而使得該主膜體321和該等導熱粒子322形成該導熱膜32。Referring to FIG. 2 and FIG. 6, a thermally conductive film forming step 23 is further performed to obtain a material having a high thermal conductivity (or a material having both a high thermal conductivity and a high reflection coefficient) from the bottom surface 103 of the LED substrate 100. The main film body 321 is formed on the surface of the sacrificial layer 43, and the heat conductive particles 322 are dispersed in the main film body 321 during the deposition of the main film body 321, so that the main film body 321 and the heat conductive particles are The heat conductive film 32 is formed 322.
以導熱粒子322為鑽石粉末、主膜體321的構成材料是銅為例，本步驟是先將鑽石粉末混合於電解液中而成鑽石粉末為懸浮顆粒的懸浮液，之後開始進行電鍍製程，由於鑽石粉末懸浮於電解液中，因此，當利用電鍍方式形成該主膜體321時，銅離子會被還原成銅原子而自該犧牲層43向上逐漸堆積，此時也會同步且隨機地將電鍍液中懸浮的鑽石粉末包覆，而最終形成導熱粒子322散佈於主膜體321中的導熱 膜32；或是，本步驟也可以先電鍍沉積出一層極薄的銅箔，繼之將鑽石粉末噴覆於銅箔上，或是採用例如化學氣相沉積方式於銅箔上形成多數鑽石結晶後，再沉積一層掩覆該等鑽石結晶粉末的銅箔，如此重複進行多次，而可於最終形成導熱粒子322散佈於主膜體321中的導熱膜32。另外，本步驟還可以先用例如化學氣相沉積方式(CVD)於該發光二極體晶片100底面103與該犧牲層43上形成多數鑽石結晶顆粒作為導熱粒子322，甚至沉積成整片鑽石膜態樣後，再配合上述電鍍方式形成該導熱膜32，以增進該導熱膜32的熱傳導功效。Taking the heat conductive particles 322 as a diamond powder and the main film body 321 as a constituent material of copper, in this step, the diamond powder is first mixed in the electrolytic solution to form a suspension of the diamond powder as a suspended particle, and then the plating process is started. The diamond powder is suspended in the electrolyte. Therefore, when the main film body 321 is formed by electroplating, copper ions are reduced to copper atoms and gradually accumulate upward from the sacrificial layer 43. At this time, plating is also performed synchronously and randomly. The diamond powder suspended in the liquid is coated, and finally the heat conduction of the heat conductive particles 322 dispersed in the main film body 321 is formed. Membrane 32; or, in this step, a very thin copper foil may be electroplated first, followed by spraying the diamond powder on the copper foil, or forming a majority diamond crystal on the copper foil by, for example, chemical vapor deposition. Thereafter, a copper foil covering the diamond crystal powder is deposited, and this is repeated a plurality of times, and the heat conductive film 32 in which the heat conductive particles 322 are dispersed in the main film body 321 can be finally formed. In addition, in this step, a plurality of diamond crystal particles are formed on the bottom surface 103 of the LED substrate 100 and the sacrificial layer 43 as heat conductive particles 322 by, for example, chemical vapor deposition (CVD), or even a whole diamond film. After the state, the heat conductive film 32 is formed in combination with the above plating method to enhance the heat conduction effect of the heat conductive film 32.
參閱圖2、圖7，然後進行該基底形成步驟24，以具有高熱傳導係數的材料(或是同時具有高反射係數與高熱傳導係數的材料)自該導熱膜32向上增厚形成表面實質平行於該發光二極體晶片100底面103的基底31，即製得藉該犧牲層43與暫時基板41連結的發光元件3；在此，本步驟採電鍍方式自該導熱膜32向上增厚形成。Referring to FIG. 2 and FIG. 7, the substrate forming step 24 is then performed, and a material having a high thermal conductivity (or a material having both a high reflectance and a high thermal conductivity) is thickened upward from the thermally conductive film 32 to form a surface substantially parallel to the surface. The base 31 of the bottom surface 103 of the LED body 100 is formed by the light-emitting element 3 connected to the temporary substrate 41 by the sacrificial layer 43. Here, the plating method is formed by thickening the heat-transfer film 32 upward.
參閱圖2，最後進行犧牲層移除步驟25，蝕刻移除該犧牲層43而使該暫時基板41與該發光元件3相分離，即完成具有高散熱特性的發光元件3的製作。Referring to FIG. 2, a sacrificial layer removal step 25 is finally performed, and the sacrificial layer 43 is removed by etching to separate the temporary substrate 41 from the light-emitting element 3, that is, the fabrication of the light-emitting element 3 having high heat dissipation characteristics is completed.
參閱圖2、圖8，當實施本發明一種具有高散熱基板的發光元件的製作方法的較佳實施例時，進一步地於該導熱膜形成步驟23中，先於該發光二極體晶片100的底面103與該犧牲層43表面向上形成一由類鑽物質例如石墨烯、鑽石結晶顆粒，或鑽石薄膜等其中之一或此等之組合構成的晶種 結構323時，可以簡易地以該晶種結構323作為晶種(seed)而向上進行增厚以形成該主膜體321，而製作得到類似於圖3所示，但該導熱膜32還包括形成在該發光二極體晶片100和該主膜體321之間且由類鑽物質構成的晶種結構323的發光元件3’。藉由該晶種結構323的形成，可以讓該導熱膜形成步驟23的實施更為簡易、可控，而易於導入實際製程。Referring to FIG. 2 and FIG. 8 , when a preferred embodiment of the method for fabricating a light-emitting device having a high heat-dissipating substrate is implemented, further in the thermally conductive film forming step 23, prior to the light-emitting diode wafer 100 The bottom surface 103 and the surface of the sacrificial layer 43 form a seed crystal formed by one of or a combination of a diamond-like substance such as graphene, diamond crystal particles, or a diamond film. In the case of the structure 323, the seed crystal structure 323 can be simply used as a seed to be thickened upward to form the main film body 321, and is produced similarly to that shown in FIG. 3, but the heat conductive film 32 further includes a formation. A light-emitting element 3' of a seed crystal structure 323 composed of a diamond-like substance between the light-emitting diode wafer 100 and the main film body 321. By the formation of the seed crystal structure 323, the implementation of the thermally conductive film forming step 23 can be made simpler and controllable, and can be easily introduced into an actual process.
參閱圖2、圖9，再者，還可於該導熱膜形成步驟23實施時，先於該發光二極體晶片100的底面103與該犧牲層43表面向上形成至少一用以反射光的反射層324(圖示中繪示二反射層324作說明)，再由類鑽物質例如石墨烯、鑽石結晶顆粒，或鑽石薄膜等其中之一或此等之組合構成的晶種結構323，再以該晶種結構323作為晶種以向上形成該主膜體321，而製作得到如圖9所示，整體發光亮度更高的發光元件3”。至於形成反射層324的過程，可以選用光反射係數具有相對高、低差異的介電材料(且須同時具有高導熱係數)交錯堆疊，或是以反射係數高的金屬或合金材料鍍膜形成，由於此等過程並非本發明的研究重點所在，故在此不再詳細敘述。Referring to FIG. 2 and FIG. 9 , in addition, when the thermal conductive film forming step 23 is performed, at least one reflection for reflecting light is formed on the bottom surface 103 of the LED substrate 100 and the surface of the sacrificial layer 43 upward. a layer 324 (illustrated as a two-reflection layer 324 is illustrated), and then a seed crystal structure 323 composed of one of or a combination of a diamond-like substance such as graphene, diamond crystal particles, or a diamond film, and The seed crystal structure 323 serves as a seed crystal to form the main film body 321 upward, thereby producing a light-emitting element 3" having a higher overall luminance as shown in FIG. 9. As for the process of forming the reflective layer 324, a light reflection coefficient can be selected. A dielectric material having relatively high and low differences (and having a high thermal conductivity) is staggered or formed by coating a metal or alloy material having a high reflection coefficient. Since these processes are not the focus of the present invention, This will not be described in detail.
在此要補充說明的是，該基底31的成型除了電鍍(包括有電方式或無電方式)之外，其他例如物理性或是化學性鍍膜等等都是可以實施的選擇。再者，本發明還可以簡單地設計改變發光二極體晶片100的數目與種類，而提高所成發光元件的發光亮度，或是發出混光，特別是白光的發光元件，由於此等變化方式僅在於發光二極體晶片的選擇而已， 故在此不再一一舉例說明。It is to be noted here that the molding of the substrate 31 is an alternative to electroplating (including electrical or electroless plating), such as physical or chemical coating. Furthermore, the present invention can also be easily designed to change the number and type of the LED chips 100, to increase the luminance of the light-emitting elements, or to emit light, especially white light, due to such variations. Only in the choice of light-emitting diode chips, Therefore, no more examples are given here.
綜合上述的說明可知，本發明主要是提出完整的製作方法製作一種以發光二極體晶片100作為光源的發光元件3，藉著製程上的設計，使基底31、導熱膜32與發光二極體晶片100一體連接成型，並藉由導熱膜32中佈設更有助於導熱的導熱粒子322，以徹底改善現有的以發光二極體晶片100為光源的發光元件1作動時的散熱問題，進而提昇發光元件1的出光表現與工作壽命，確實達到本發明的創作目的。In summary, the present invention mainly provides a complete manufacturing method for fabricating a light-emitting element 3 using a light-emitting diode wafer 100 as a light source. The substrate 31, the heat-conductive film 32 and the light-emitting diode are designed by a process design. The wafer 100 is integrally molded, and the heat conductive particles 322 which are more conductive to the heat are disposed in the heat conductive film 32 to completely improve the heat dissipation problem of the existing light emitting element 1 using the light emitting diode chip 100 as a light source, thereby improving The light-emitting performance and working life of the light-emitting element 1 truly achieve the inventive object of the present invention.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
100‧‧‧發光二極體晶片100‧‧‧Light Diode Wafer
101‧‧‧主要發光面101‧‧‧ main light emitting surface
102‧‧‧側周面102‧‧‧ side circumference
103‧‧‧底面103‧‧‧ bottom
1‧‧‧發光元件1‧‧‧Lighting elements
11‧‧‧基板11‧‧‧Substrate
12‧‧‧接合材12‧‧‧Material
21‧‧‧晶片暫時固置步驟21‧‧‧ wafer temporary fixation step
22‧‧‧犧牲層形成步驟22‧‧‧Sacrificial layer formation steps
23‧‧‧導熱膜形成步驟23‧‧‧ Thermal film formation steps
24‧‧‧基底形成步驟24‧‧‧Base formation steps
25‧‧‧犧牲層移除步驟25‧‧‧ Sacrifice layer removal steps
3‧‧‧發光元件3‧‧‧Lighting elements
31‧‧‧基底31‧‧‧Base
311‧‧‧主層體311‧‧‧Main layer
312‧‧‧環圍層體312‧‧‧environment
301‧‧‧中心區301‧‧‧Central District
302‧‧‧周圍區302‧‧‧ surrounding area
32‧‧‧導熱膜32‧‧‧thermal film
321‧‧‧主膜體321‧‧‧Main membrane body
322‧‧‧導熱粒子322‧‧‧thermal particles
323‧‧‧晶種結構323‧‧‧ seed structure
324‧‧‧反射層324‧‧‧reflective layer
θ‧‧‧銳角Θ‧‧‧ acute angle
41‧‧‧暫時基板41‧‧‧ Temporary substrate
42‧‧‧蠟42‧‧‧Wax
43‧‧‧犧牲層43‧‧‧ Sacrifice layer
圖1是一示意圖，說明現有的以發光二極體晶片作為光源的發光元件；圖2是一流程圖，說明本發明一種具有高散熱特性的發光元件的製作方法的一較佳實施例；圖3是一示意圖，說明實施圖2的較佳實施例所製作出的發光元件；圖4是一示意圖，說明實施本發明的較佳實施例的一晶片暫時固置步驟得到的半成品；圖5是一示意圖，說明實施本發明的較佳實施例的一犧牲層形成步驟得到的半成品； 圖6是一示意圖，說明實施本發明的較佳實施例的一導熱膜形成步驟得到的半成品；圖7是一示意圖，說明實施本發明的較佳實施例的一基底形成步驟得到的半成品；圖8是一示意圖，說明實施本發明一種具有高散熱特性的發光元件的製作方法的較佳實施例時，更動一導熱膜形成步驟所製作出的另一發光元件；及圖9是一示意圖，說明實施本發明一種具有高散熱特性的發光元件的製作方法的較佳實施例時，更動一導熱膜形成步驟所製作出的又一發光元件。1 is a schematic view showing a conventional light-emitting element using a light-emitting diode chip as a light source; FIG. 2 is a flow chart illustrating a preferred embodiment of a method for fabricating a light-emitting element having high heat dissipation characteristics according to the present invention; 3 is a schematic view showing the light-emitting element produced by the preferred embodiment of FIG. 2; FIG. 4 is a schematic view showing a semi-finished product obtained by a temporary mounting step of a preferred embodiment of the present invention; FIG. a schematic view showing a semi-finished product obtained by performing a sacrificial layer forming step of a preferred embodiment of the present invention; Figure 6 is a schematic view showing a semi-finished product obtained by a heat conductive film forming step of a preferred embodiment of the present invention; and Figure 7 is a schematic view showing a semi-finished product obtained by a substrate forming step of a preferred embodiment of the present invention; 8 is a schematic view showing a preferred embodiment of a method for fabricating a light-emitting element having high heat dissipation characteristics according to the present invention, further illuminating another light-emitting element produced by a heat-conductive film forming step; and FIG. 9 is a schematic view illustrating In a preferred embodiment of the method of fabricating a light-emitting device having high heat dissipation characteristics, a further light-emitting element produced by a thermally conductive film forming step is further modified.
21‧‧‧晶片暫時固置步驟21‧‧‧ wafer temporary fixation step
22‧‧‧犧牲層形成步驟22‧‧‧Sacrificial layer formation steps
23‧‧‧導熱膜形成步驟23‧‧‧ Thermal film formation steps
24‧‧‧基底形成步驟24‧‧‧Base formation steps
25‧‧‧犧牲層移除步驟25‧‧‧ Sacrifice layer removal steps
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| TW201133945A (en) * | 2010-01-12 | 2011-10-01 | jian-min Song | Diamond LED devices and associated methods |
| TW201220445A (en) * | 2010-09-21 | 2012-05-16 | Ritedia Corp | Diamond particle mololayer heat spreaders and associated methods |
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| TW201133945A (en) * | 2010-01-12 | 2011-10-01 | jian-min Song | Diamond LED devices and associated methods |
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