TWI466272B - A microlens forming method and a semiconductor device - Google Patents
A microlens forming method and a semiconductor device Download PDFInfo
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- TWI466272B TWI466272B TW096123363A TW96123363A TWI466272B TW I466272 B TWI466272 B TW I466272B TW 096123363 A TW096123363 A TW 096123363A TW 96123363 A TW96123363 A TW 96123363A TW I466272 B TWI466272 B TW I466272B
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- 238000000034 method Methods 0.000 title claims description 56
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000005530 etching Methods 0.000 claims description 258
- 239000000463 material Substances 0.000 claims description 118
- 238000012545 processing Methods 0.000 claims description 90
- 239000011368 organic material Substances 0.000 claims description 17
- 229910010272 inorganic material Inorganic materials 0.000 claims description 15
- 239000011147 inorganic material Substances 0.000 claims description 15
- 238000003384 imaging method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000003362 replicative effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 133
- 150000003254 radicals Chemical class 0.000 description 41
- 238000000151 deposition Methods 0.000 description 23
- 230000008021 deposition Effects 0.000 description 22
- 238000010586 diagram Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- -1 cycloolefin maleic anhydride Chemical class 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 206010010071 Coma Diseases 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- HCVDENZMQSPJRI-UHFFFAOYSA-N 3,3,4-triethyldodecane Chemical compound CCCCCCCCC(CC)C(CC)(CC)CC HCVDENZMQSPJRI-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005678 polyethylene based resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000000475 sunscreen effect Effects 0.000 description 1
- 239000000516 sunscreening agent Substances 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Ophthalmology & Optometry (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
Description
本發明是關於形成例如CCD固體攝像元件或液晶顯示元件等的作為晶片上透鏡等來使用的微透鏡之技術。The present invention relates to a technique of forming a microlens used as a wafer-on-lens or the like, such as a CCD solid-state imaging element or a liquid crystal display element.
CCD固體攝像元件或MOS型固體攝像元件，為了要增多對像素的入射光量來使感度提高，而以形成微透鏡來提高對感光部的聚光度的方式構成，對應於各像素之微透鏡則是例如呈矩陣配列。然後，為了要提高CCD或CMOS感測器的感度，要求增大微透鏡的面積來增多聚光點的光量。因此，必須縮窄相互間相鄰之微透鏡彼此間的間隔，具體上必須如第16圖所示，將縱向或橫向並排之微透鏡100彼此間的隔離間隔D1與相互間對角位置上之微透鏡100的隔離間隔D2予以縮窄或是無距離。In order to increase the sensitivity of the CCD solid-state imaging device or the MOS solid-state imaging device, the CCD solid-state imaging device or the MOS-type solid-state imaging device is configured to increase the sensitivity of the light-receiving portion by forming a microlens, and the microlens corresponding to each pixel is For example, it is arranged in a matrix. Then, in order to increase the sensitivity of the CCD or CMOS sensor, it is required to increase the area of the microlens to increase the amount of light at the condensing point. Therefore, it is necessary to narrow the interval between the mutually adjacent microlenses, and specifically, as shown in FIG. 16, the longitudinally or laterally spaced microlenses 100 are spaced apart from each other by a distance D1 and a diagonal position therebetween. The isolation interval D2 of the microlens 100 is narrowed or has no distance.
這種微透鏡100係藉由材料來使透過性優異的波長區域或可以聚光的區域有所不同，透鏡材料最好是依照該用途來選用有機材料之外，可以自由選擇氮化矽膜或氧化矽膜的無機材料等的無機材料。然則，為了要形成微透鏡100，使用例如如第17(a)圖所示由下側起依序使感光部或導電膜所形成的下層部分101、與透鏡材料層102、與由抗蝕膜所形成之遮罩層103層積在一起的半導體晶圓(以下，簡稱為「晶圓」)W。然後，將遮罩層103如同圖所示形成為透鏡形狀，藉由處理氣體的電漿來蝕刻遮罩層103及透鏡材料層102，如第17(b)圖所示，將遮罩層103的透鏡形狀複製在透鏡材料層102來形成微透鏡100。The microlens 100 is made of a material having a wavelength region excellent in transparency or a region where light can be concentrated. The lens material is preferably selected from an organic material in accordance with the use, and the tantalum nitride film or the film can be freely selected. An inorganic material such as an inorganic material of a ruthenium oxide film. However, in order to form the microlens 100, for example, the lower layer portion 101 formed of the photosensitive portion or the conductive film from the lower side as shown in Fig. 17(a), the lens material layer 102, and the resist film are used. A semiconductor wafer (hereinafter simply referred to as "wafer") W in which the formed mask layer 103 is laminated is formed. Then, the mask layer 103 is formed into a lens shape as shown in the figure, and the mask layer 103 and the lens material layer 102 are etched by the plasma of the processing gas. As shown in FIG. 17(b), the mask layer 103 is formed. The lens shape is replicated in the lens material layer 102 to form the microlens 100.
此處，前述遮罩層103係藉由光學光刻製程(photolithography)進行圖案處理，形成為透鏡形狀，但會因曝光製程之後的熱處理而引起軟化。因而，透鏡彼此間相接近設置，就會因前述軟化，而該表面張力致使透鏡彼此間相接觸，透鏡形狀因此變形。因而，遮罩層103則是透鏡彼此間隔著例如0.2~05μm程度的間隔作為D1來配置，使透鏡彼此間不會相接觸，又相互間對角位置上的透鏡彼此間成為例如1μm程度的間隔作為D2。於是，也會在被複製到透鏡材料層102之微透鏡100彼此間，形成對應於該D1和D2的間隔。Here, the mask layer 103 is patterned by photolithography to form a lens shape, but is softened by heat treatment after the exposure process. Therefore, the lenses are disposed close to each other, and the surface tension causes the lenses to contact each other due to the aforementioned softening, and the lens shape is thus deformed. Therefore, the mask layer 103 is disposed such that the lenses are spaced apart from each other by, for example, an interval of 0.2 to 05 μm, so that the lenses do not come into contact with each other, and the lenses at diagonal positions of each other are spaced apart by, for example, 1 μm. As D2. Thus, the intervals corresponding to the D1 and D2 are also formed between the microlenses 100 copied to the lens material layer 102.
然而，透鏡材料層102由無機材料所構成的情況，被複製到透鏡材料層102之微透鏡100彼此間的間隔D1和D2，會有如第17圖中以間隔D1代表所表示，變成大於被形成在遮罩層的間隔d1和d2(以下，稱為初期間隔d1和d2)的問題。However, in the case where the lens material layer 102 is composed of an inorganic material, the intervals D1 and D2 which are copied to the microlenses 100 of the lens material layer 102, as indicated by the interval D1 in FIG. 17, become larger than being formed. The problem of the intervals d1 and d2 of the mask layer (hereinafter, referred to as the initial intervals d1 and d2).
此處，例如使用氮化矽膜來作為透鏡材料之微透鏡的形成方法，作為縮窄微透鏡彼此間的距離之手法，在日本專利文獻1中已有揭示該技術。該技術的透徵為：使用SF6 氣體和CHF3 氣體來作為處理氣體，並且調節該兩種氣體的流量，將遮罩層及由Si3 N4 膜所形成之透鏡材料層的2層予以蝕刻處理，使堆積物堆積在被形成在遮罩層之透鏡的側壁來縮窄透鏡彼此間的距離，複製此形狀，藉此來縮窄微透鏡彼此間的間隔。Here, for example, a method of forming a microlens using a tantalum nitride film as a lens material is disclosed in Japanese Patent Laid-Open No. Hei. The technique reveals that SF 6 gas and CHF 3 gas are used as the processing gas, and the flow rates of the two gases are adjusted, and the mask layer and the two layers of the lens material layer formed of the Si 3 N 4 film are applied. The etching treatment causes deposits to accumulate on the side walls of the lens formed on the mask layer to narrow the distance between the lenses, and to replicate the shape, thereby narrowing the gap between the microlenses.
然而，依據本發明團隊的驗證，被認為即使依照該文獻的手法，仍無法充分縮窄間隔D1和D2，視為並不足以達到解決本發明的課題。然後，這情形變成對於使用無機材料的微透鏡之固體攝像元件提高感度造成阻礙的一個要因，因而，無法充分確保依照用途自由選擇有機材料或無機材料來作為微透鏡的材料之材料選擇的自由度。However, according to the verification by the team of the present invention, it is considered that even if the intervals D1 and D2 are not sufficiently narrowed according to the method of the document, it is considered that it is not enough to solve the problem of the present invention. Then, this situation becomes a factor that hinders the sensitivity of the solid-state imaging element using the microlens of the inorganic material, and thus, the degree of freedom in material selection as a material of the microlens freely selecting the organic material or the inorganic material according to the use cannot be sufficiently ensured. .
專利文獻1：日本專利特開2005－101232號公報Patent Document 1: Japanese Patent Laid-Open Publication No. 2005-101232
本發明係鑑於上述問題而形成，其目的是提供有關可以控制透鏡的形狀，藉由此方式可以使表面積很大但縮窄相鄰之微透鏡彼此間的間隔的微透鏡之形成方法、及具備有這種微透鏡之半導體裝置的技術。The present invention has been made in view of the above problems, and an object thereof is to provide a method of forming a microlens capable of controlling a shape of a lens, thereby making it possible to make a large surface area but narrowing a space between adjacent microlenses, and A technique of a semiconductor device having such a microlens.
因而，本發明的微透鏡之形成方法，其透徵為，包括有以下的步驟：在基板上，形成由無機材料所形成之透鏡材料層的步驟；及接著，在該透鏡材料層上，形成由有機材料所形成之中間層的步驟；及接著，在該透鏡材料層上，形成由有機材料所形成之遮罩層的步驟；及接著，在前述遮罩層形成透鏡形狀的過程；及接著，對前述遮罩層和中間層，進行蝕刻處理，將遮罩層的透鏡形狀複製到前述中間層的步驟；及接著，使用含有SF6 氣體和CHF3 氣體之處理氣體，對前述中間層和透鏡材料層，進行蝕刻處理，將中間層的透鏡形狀複製到前述透鏡材料層，形成透鏡的步驟。Therefore, the method for forming a microlens of the present invention comprises the steps of: forming a layer of a lens material formed of an inorganic material on a substrate; and subsequently forming a layer of the lens material a step of forming an intermediate layer of an organic material; and, subsequently, forming a mask layer formed of an organic material on the lens material layer; and subsequently, forming a lens shape in the mask layer; and then And etching the mask layer and the intermediate layer to reproduce the lens shape of the mask layer to the intermediate layer; and then, using the processing gas containing SF 6 gas and CHF 3 gas, the intermediate layer and The lens material layer is subjected to an etching process to copy the lens shape of the intermediate layer to the lens material layer to form a lens.
前述透鏡材料層係由從氮化矽膜和氧化矽膜、以及氮氧化矽膜所選出之膜所形成，前述遮罩層及中間層進行蝕刻的步驟則是使用含有碳和氟的氣體來作為處理氣體。另外，前述遮罩層可以由抗蝕膜所形成，也可以由以與中間層相同種類的有機材料所形成之膜所形成。The lens material layer is formed of a film selected from a tantalum nitride film and a hafnium oxide film, and a hafnium oxynitride film. The step of etching the mask layer and the intermediate layer is to use a gas containing carbon and fluorine as a gas. Process the gas. Further, the mask layer may be formed of a resist film or may be formed of a film formed of the same type of organic material as the intermediate layer.
另外，當前述透鏡材料層為氮化矽膜時，前述中間層及透鏡材料層進行蝕刻的步驟，最好是在前述透鏡材料層的蝕刻速度除以中間層的蝕刻速度所獲得之蝕刻選擇比變成1.0以上且1.6以下的蝕刻條件下進行，再更好是在蝕刻選擇比變成1.4以上且1.6以下的蝕刻條件下進行。另外，當前述透鏡材料層為氧化矽膜時，前述中間層及透鏡材料層進行蝕刻的步驟，最好是在前述透鏡材料層的蝕刻速度除以中間層的蝕刻速度所獲得之蝕刻選擇比變成1.7以上的蝕刻條件下進行，再更好是蝕刻選擇比變成1.8以上的蝕刻條件下進行。此處，前述蝕刻選擇比係經由調整例如SF6 氣體和CHF3 氣體的流量比來控制。In addition, when the lens material layer is a tantalum nitride film, the step of etching the intermediate layer and the lens material layer is preferably an etching selectivity obtained by dividing an etching rate of the lens material layer by an etching rate of the intermediate layer. It is carried out under etching conditions of 1.0 or more and 1.6 or less, and more preferably under etching conditions in which the etching selectivity is 1.4 or more and 1.6 or less. In addition, when the lens material layer is a hafnium oxide film, the etching process of the intermediate layer and the lens material layer is preferably performed by dividing an etching rate of the lens material layer by an etching rate of the intermediate layer. It is carried out under the etching conditions of 1.7 or more, and more preferably under the etching conditions in which the etching selectivity is 1.8 or more. Here, the aforementioned etching selection ratio is controlled by adjusting a flow ratio of, for example, SF 6 gas and CHF 3 gas.
前述微透鏡可以作為以對應於固體攝像元件呈行列狀並排的複數個的各個感光部的方式設置之聚光用的微透鏡來使用。另外，本發明的半導體裝置，其特徵為：具備有以既述的方法進行成膜之微透鏡。The microlens can be used as a condensing microlens provided so as to correspond to a plurality of photosensitive portions in which solid-state imaging elements are arranged in a matrix. Further, a semiconductor device of the present invention is characterized in that it has a microlens formed by a method described above.
依據本發明，由後述的實施例就會明白，可以進行透鏡形狀的控制，藉由此方式，可以形成表面積很大的微透鏡，而可以縮窄相鄰微透鏡彼此間的間隔。According to the present invention, it will be understood from the later-described embodiments that the lens shape can be controlled, whereby the microlenses having a large surface area can be formed, and the interval between adjacent microlenses can be narrowed.
首先，以例子來說明本發明的半導體裝置的一例中具備有微透鏡之CCD固體攝像元件。第1圖為前述CCD固體攝像元件的構成的一例，圖中，圖號2具備有呈行列狀並排在表面部之感光部21及垂直暫存器22之半導體基板例如Si基板。射入到前述感光部21之光藉由光電二極體來進行光電轉換，藉由垂直暫存器22傳送到輸出部(未圖示)。在該Si基板2的上層側之感光部21以外的區域，設有由例如多晶矽(polysilicon)所組成並成為傳送電極之導電膜23，在該導電膜23之上側的區域，形成有例如鋁所組成之遮光膜24。First, a CCD solid-state imaging element including a microlens in an example of the semiconductor device of the present invention will be described by way of example. 1 is an example of the configuration of the CCD solid-state imaging device. In the figure, FIG. 2 includes a semiconductor substrate such as a Si substrate in which the photosensitive portion 21 and the vertical register 22 are arranged in a matrix. The light incident on the light-receiving portion 21 is photoelectrically converted by the photodiode, and is transmitted to the output portion (not shown) by the vertical register 22. A conductive film 23 composed of, for example, polysilicon and serving as a transfer electrode is provided in a region other than the light-receiving portion 21 on the upper layer side of the Si substrate 2. On the upper side of the conductive film 23, for example, aluminum is formed. A light shielding film 24 is formed.
遮光膜24係用來一面將光射入到感光部21，一面抑制光射入到前述導電膜23，因而，在對應於遮光膜24的感光部21之區域，形成有用來讓光射入之開口部。在該遮光膜24上，形成有例如聚醯亞胺系或聚乙烯系的樹脂所組成之平坦化膜25。The light-shielding film 24 is for suppressing light from entering the conductive film 23 while injecting light into the light-receiving portion 21, and thus, in the region corresponding to the light-receiving portion 21 of the light-shielding film 24, light is incident thereon. Opening. On the light-shielding film 24, a planarizing film 25 composed of, for example, a polyimide-based or polyethylene-based resin is formed.
在前述平坦化膜25上形成有濾色層26，該濾色層26的上層，在與各別的感光部21相對應的區域，形成有由無機材料所形成之微透鏡3，該微透鏡3係用來讓光聚光到感光部21，為了要聚集更大範圍的光，而以平面上的大小大於感光部21的方式形成。A color filter layer 26 is formed on the planarizing film 25, and an upper layer of the color filter layer 26 is formed with a microlens 3 formed of an inorganic material in a region corresponding to each of the photosensitive portions 21, the microlens The 3 series is used to condense light to the light-receiving portion 21, and is formed so that the size on the plane is larger than that of the photosensitive portion 21 in order to collect a larger range of light.
接著，根據第2圖和第3圖來說明上述微透鏡3之形成方法。微透鏡3係如同上述，呈行列狀形成在成為基板的晶圓W上，在X、Y方向上所相鄰之微透鏡3彼此間之間形成有間隔D1，在斜方向上所相鄰之微透鏡3彼此間之間形成有間隔D2(參考第16圖)。本發明之目的係經由調整透鏡形狀，使前述間隔D1和間隔D2小於被形成在遮罩層33的初期間隔d1、d2，不過可以藉由縮窄間隔D1來自動地縮窄間隔D2，故以下，針對間隔D1來進行說明。Next, a method of forming the above-described microlens 3 will be described based on FIGS. 2 and 3. The microlenses 3 are formed in a matrix on the wafer W as a substrate as described above, and the microlenses 3 adjacent to each other in the X and Y directions are formed with a space D1 adjacent to each other in the oblique direction. The microlenses 3 are formed with a space D2 therebetween (refer to Fig. 16). The object of the present invention is to adjust the shape of the lens such that the interval D1 and the interval D2 are smaller than the initial intervals d1 and d2 formed in the mask layer 33. However, the interval D2 can be automatically narrowed by narrowing the interval D1. This will be described with respect to the interval D1.
首先，在Si基板2上形成感光部21及垂直暫存器22後，形成導電膜23及遮光膜24，接著，平坦化膜25與濾色層26依序來形成。然後，如第1圖所示，以例如1μm程度的厚度，在濾色層26的上層形成由無機材料例如氮化矽膜所形成之透鏡材料層31，再將中間層32與遮罩層33依該順序形成在透鏡材料層31的上層。前述中間層32係利用由有機材料所形成的膜，以例如0.5~1.5μm程度的厚度所構成，前述遮罩層33則是利用由有機材料所形成的膜，以例如0.6μm程度的厚度所構成。First, after the photosensitive portion 21 and the vertical register 22 are formed on the Si substrate 2, the conductive film 23 and the light shielding film 24 are formed, and then the planarization film 25 and the color filter layer 26 are sequentially formed. Then, as shown in Fig. 1, a lens material layer 31 formed of an inorganic material such as a tantalum nitride film is formed on the upper layer of the color filter layer 26 at a thickness of, for example, about 1 μm, and the intermediate layer 32 and the mask layer 33 are further formed. The upper layer of the lens material layer 31 is formed in this order. The intermediate layer 32 is formed of a film made of an organic material, for example, to a thickness of about 0.5 to 1.5 μm, and the mask layer 33 is formed of a film made of an organic material, for example, to a thickness of about 0.6 μm. Composition.
此處，前述氮化矽膜(silicon nitride膜)係指含有矽(Si)和氮(N)之膜，被推認主成分為Si3 N4 膜，不過以下，以「SiN膜」來進行說明。列舉該SiN膜之形成方法的一例，原料氣體採用含有矽和氮之氣體，例如二氯矽烷(SiCl2 )氣和氨(NH4 )氣，由藉由令該兩二氯矽烷氣和氨氣電漿化，令含在電漿中之矽和氮的各活性種堆積在濾色層26上所形成。Here, the silicon nitride film (silicon nitride film) is a film containing bismuth (Si) and nitrogen (N), and the main component is a Si 3 N 4 film, but the following description will be made of "SiN film". . As an example of the method for forming the SiN film, the material gas is a gas containing helium and nitrogen, such as dichlorosilane (SiCl 2 ) gas and ammonia (NH 4 ) gas, by using the dichlorosilane gas and ammonia gas. The plasma is formed by depositing various active species of cerium and nitrogen contained in the plasma on the color filter layer 26.
另外，形成中間層32之前述有機膜係稱為由有機材料例如C、H以及O所形成之有機物的膜，可以採用例如酚系抗蝕膜、丙烯基系抗蝕膜、KrF抗蝕膜、將環烯烴順丁烯二酸酐作為平台之抗蝕膜(COMA抗蝕膜)。該中間層32則是以旋轉塗布來塗佈特定的抗蝕液，以此方式，形成在透鏡材料層31上。Further, the organic film forming the intermediate layer 32 is referred to as a film of an organic material formed of an organic material such as C, H, and O, and for example, a phenol-based resist film, an acrylic-based resist film, a KrF resist film, or the like may be used. A cycloolefin maleic anhydride was used as a resist film (COMA resist film) for the platform. The intermediate layer 32 is formed by coating a specific resist liquid by spin coating, and is formed on the lens material layer 31 in this manner.
進而，前述遮罩層33可以採用KrF系抗蝕膜或I線系抗蝕膜、X線系抗蝕膜等的酚系和丙烯基系抗蝕膜、將環烯烴順丁烯二酸酐作為平台之抗蝕膜(COMA抗蝕膜)。該遮罩層33則是以旋轉塗布來塗佈特定的抗蝕液，以此方式，形成在中間層32上，之後藉由光學光刻製程(photolithography)進行圖案處理，進行熱處理來加工成如同第1圖所示之特定的透鏡形狀。Further, the mask layer 33 may be a phenol-based or acryl-based resist film such as a KrF-based resist film, an I-line resist film or an X-ray resist film, or a cycloolefin maleic anhydride. Resist film (COMA resist film). The mask layer 33 is coated with a specific resist liquid by spin coating, and is formed on the intermediate layer 32 in this manner, and then subjected to pattern processing by photolithography to perform heat treatment to be processed as if The specific lens shape shown in Fig. 1.
接著，如第2(a)圖所示，使用含有碳和氟之第1處理氣體例如CF4 氣體及C4 F8 氣體，將遮罩層33及中間層32予以蝕刻處理，藉由此方式，將遮罩層33的透鏡形狀複製到中間層32。此處，該蝕刻處理被推認為經由將CF4 氣體及C4 F8 氣體電漿化，從該兩氣體所解離出來之解離生成物中的F自由基作為蝕刻種來作用，CF自由基、(CF2 )n 自由基等作為堆積種來作用，一面同時進行F自由基的蝕刻及CF自由基等的堆積，一面逐漸進展蝕刻。此時，前述堆積種逐漸堆積在遮罩層33之透鏡形狀的周緣區域，故選擇特定的蝕刻條件的話，經由該堆積，遮罩層33的透鏡形狀可以藉由透鏡寬度變大，複製該遮罩層33，中間層32則增大透鏡寬度。Next, as shown in FIG. 2(a), the mask layer 33 and the intermediate layer 32 are etched by using a first processing gas containing carbon and fluorine, for example, CF 4 gas and C 4 F 8 gas. The lens shape of the mask layer 33 is copied to the intermediate layer 32. Here, the etching treatment is considered to be performed by plasma-oxidizing CF 4 gas and C 4 F 8 gas, and F radicals in the dissociated product dissociated from the two gases act as an etching species, CF radical, (CF 2 ) The n- radical or the like acts as a deposition species, and the etching is progressed while the F radical etching and the CF radical are deposited at the same time. At this time, the deposited species are gradually deposited on the peripheral region of the lens shape of the mask layer 33. Therefore, when a specific etching condition is selected, the lens shape of the mask layer 33 can be increased by the lens width, and the mask can be reproduced. The cover layer 33 and the intermediate layer 32 increase the lens width.
然則，蝕刻初期時，被認為如第3(a)圖中的虛線所示，變成前述間隔D1大於初期間隔d1，但原因並不明確。然而，中間層32係由含有C的有機材料所形成，進行前述蝕刻時，從中間層32產生含在堆積種的C。因此，被認為該產生的C對於前述CF自由基等的堆積不但不會妨礙反而會促進，所以隨著蝕刻進展，前述變大的間隔D1藉由前述堆積物迅速被埋填起來，透鏡形狀的擴展速度變快。However, at the initial stage of etching, it is considered that the interval D1 is larger than the initial interval d1 as indicated by a broken line in the third graph (a), but the reason is not clear. However, the intermediate layer 32 is formed of an organic material containing C, and when the etching is performed, C contained in the deposited species is generated from the intermediate layer 32. Therefore, it is considered that the C generated is not promoted by the deposition of the CF radical or the like, and the enlarged interval D1 is quickly buried by the deposit as the etching progresses, and the lens shape is formed. The expansion speed is faster.
以此方式，同時進行前述蝕刻和堆積，遮罩層33的透鏡形狀本身變大，且對中間層32的前述間隔D1埋填堆積物，則如第3(b)圖所示，中間層32的形狀逐漸變大，前述間隔D1縮窄。然後，選擇最適當的蝕刻條件，使中間層32的底邊彼此間相接觸，間隔D1則變成零，進而有關間隔D2也儘可能接近零。In this manner, the etching and deposition are simultaneously performed, the lens shape of the mask layer 33 itself becomes large, and the deposit is buried in the interval D1 of the intermediate layer 32, as shown in the third (b), the intermediate layer 32. The shape gradually becomes larger, and the aforementioned interval D1 is narrowed. Then, the most appropriate etching conditions are selected such that the bottom edges of the intermediate layer 32 are in contact with each other, and the interval D1 becomes zero, and the relevant interval D2 is also as close as possible to zero.
接著，如第2(b)圖所示，使用由SF6 氣體及CHF3 氣體所組成的第2處理氣體，將中間層32及透鏡材料層31予以蝕刻，藉由此方式，將中間層32的透鏡形狀複製到透鏡材料層31。此處，蝕刻處理則是被推認為將SF6 氣體及CHF3 氣體予以電漿化，從該兩氣體所解離出來之解離生成物中的F自由基作為蝕刻種來作用，C自由基、CF自由基、CF2 自由基、CF3 自由基等作為堆積種來作用，一面同時進行F自由基的蝕刻及C自由基等的堆積，一面逐漸進展蝕刻。Next, as shown in Fig. 2(b), the intermediate layer 32 and the lens material layer 31 are etched using a second processing gas composed of SF 6 gas and CHF 3 gas, whereby the intermediate layer 32 is formed. The lens shape is copied to the lens material layer 31. Here, in the etching treatment, it is considered that the SF 6 gas and the CHF 3 gas are plasmad, and the F radicals in the dissociated product dissociated from the two gases act as an etching species, C radical, CF The free radical, the CF 2 radical, the CF 3 radical, and the like act as a deposition species, and the etching is progressed while the F radical etching and the C radical are deposited.
此處，針對構成透鏡材料層31之SiN膜，被認為CF自由基(CF* )、CF2 自由基(CF2 * )、CF3 自由基(CF3 * )等都是依照以下的反應來作用。這些反應式中，SiF4 ↑、N2 ↑分別表示產生SiF4 氣體、N2 氣體，C↓表示在透鏡材料層31中C作為堆積種來作用。Here, the SiN film constituting the lens material layer 31 is considered to be a CF radical (CF * ), a CF 2 radical (CF 2 * ), a CF 3 radical (CF 3 * ), or the like according to the following reaction. effect. In these reaction formulas, SiF 4 ↑ and N 2 ↑ respectively indicate that SiF 4 gas and N 2 gas are generated, and C ↓ indicates that C acts as a deposition species in the lens material layer 31.
Si3 N4 +12CF* → 3SiF4 ↑+2N2 ↑+12C↓Si 3 N 4 +12CF * → 3SiF 4 ↑+2N 2 ↑+12C↓
Si3 N4 +6CF2 * → 3SiF4 ↑+2N2 ↑+6C↓Si 3 N 4 +6CF 2 * → 3SiF 4 ↑+2N 2 ↑+6C↓
Si3 N4 +4CF3 * → 3SiF4 ↑+2N2 ↑+4C↓Si 3 N 4 +4CF 3 * → 3SiF 4 ↑+2N 2 ↑+4C↓
此時，由前述C自由基等所組成的堆積種，逐漸堆積在中間層32之透鏡形狀的周緣區域，所以透鏡寬度更加變大，複製該中間層32，因此透鏡材料層31的透鏡寬度變大。一方面，蝕刻初期時，變成透鏡材料層的間隔D1大於初期間隔d1，這點也與前述同樣。此處，透鏡材料層31蝕刻中，如前述的反應式所示，與C自由基起反應而產生氮氣(N2 )，不過被認為會因該N2 氣體來而妨礙到C自由基的堆積。因而，被推認為與由有機膜所形成的中間層32蝕刻作比較，利用前述堆積物來埋填透鏡材料層31的間隔D1不容易進展，透鏡形狀的擴展速度變慢。At this time, the deposited species composed of the C radical or the like is gradually deposited on the peripheral region of the lens shape of the intermediate layer 32, so that the lens width is further increased, and the intermediate layer 32 is reproduced, so that the lens width of the lens material layer 31 is changed. Big. On the other hand, at the initial stage of etching, the interval D1 of the lens material layer is larger than the initial interval d1, which is also the same as described above. Here, in the etching of the lens material layer 31, as shown in the above reaction formula, nitrogen gas (N 2 ) is generated by reaction with C radicals, but it is considered that the accumulation of C radicals is hindered by the N 2 gas. . Therefore, it is considered that the interval D1 in which the lens material layer 31 is buried by the deposit is not easily progressed as compared with the etching of the intermediate layer 32 formed of the organic film, and the expansion speed of the lens shape is slow.
然而，如前述，中間層32的間隔D1充分縮窄，又前述堆積種有逐漸堆積到中間層32之透鏡形狀的周緣區域的傾向，經由該堆積，中間層32的透鏡形狀更加變大透鏡寬度，因而複製該透鏡形狀，則如第2(c)圖、第3(c)圖所示，透鏡材料層31的透鏡形狀變成縮窄前述間隔D1。以此方式，選擇最適當的蝕刻條件，形成前述間隔D1變成零，進而有關間隔D2也儘可能接近零之微透鏡3。However, as described above, the interval D1 of the intermediate layer 32 is sufficiently narrowed, and the above-described deposition tends to gradually accumulate in the peripheral portion of the lens shape of the intermediate layer 32, and the lens shape of the intermediate layer 32 is further enlarged by the deposition. Thus, by copying the lens shape, as shown in the second (c) and third (c), the lens shape of the lens material layer 31 is narrowed by the interval D1. In this way, the most appropriate etching conditions are selected to form the aforementioned microlens 3 in which the interval D1 becomes zero, and thus the interval D2 is also as close as possible to zero.
此處，第2圖和第3圖中，微透鏡3的形狀變成半圓狀，不過也可以依據膜的種類或構成，改變該曲率，使該平面形狀變成長方形。另外，這種微透鏡3係以例如格子狀配列或蜂槽狀配列的方式配列，不過該配列間隔的X方向與Y方向，可以相同，也可以不相同。Here, in the second and third figures, the shape of the microlens 3 is semicircular, but the curvature may be changed depending on the type or configuration of the film to make the planar shape into a rectangular shape. Further, the microlenses 3 are arranged in a lattice arrangement or a bee-like arrangement, for example, but the X direction and the Y direction of the arrangement interval may be the same or different.
其次，根據第4圖來說明用來形成前述微透鏡3之電漿裝置。圖中，圖號4為氣密構成，壁部例如由鋁所構成之圓筒狀的處理室，該處理室4具備有上部室4A及大於上部室4A的下部室4B，下部室4B則是接地。Next, a plasma device for forming the aforementioned microlens 3 will be described based on Fig. 4 . In the figure, Fig. 4 is a gas-tight structure, and the wall portion is, for example, a cylindrical processing chamber made of aluminum. The processing chamber 4 is provided with an upper chamber 4A and a lower chamber 4B larger than the upper chamber 4A, and the lower chamber 4B is Ground.
處理室4內具備有兼作為用來大致呈水平支撐屬於基板的晶圓W之下部電極使用之或置台41，該載置台41則例如利用鋁來構成。另外，載置台41的表面設有利用靜電吸附力來吸附保持晶圓W之靜電夾盤42。圖中，圖號42a為靜電夾盤42的電源部。在被載置在靜電夾盤42的表面之晶圓W的周圍配置聚焦環43，以電漿產生時，經由聚焦環43，使電漿集束在載置台41上的晶圓W的方式構成。前述載置台41的構成係介於絕緣板44支撐在由導體所組成的支撐台45，介於該支撐台45，利用例如由滾珠螺桿機構46所組成之升降機構，在載置台41表面位於下部室4B的載置位置與第4圖所示的處理位置之間升降自如。圖中，圖號47為例如由不銹鋼(SUS)所構成之蛇腹(bellows)，支持台45介於該蛇腹47與處理室4相導通。The processing chamber 4 is provided with a table 41 for use as a lower electrode for supporting the wafer W belonging to the substrate substantially horizontally, and the mounting table 41 is formed of, for example, aluminum. Further, the surface of the mounting table 41 is provided with an electrostatic chuck 42 that adsorbs and holds the wafer W by electrostatic adsorption. In the figure, reference numeral 42a is a power supply portion of the electrostatic chuck 42. The focus ring 43 is disposed around the wafer W placed on the surface of the electrostatic chuck 42, and when the plasma is generated, the plasma is bundled on the wafer W on the mounting table 41 via the focus ring 43. The mounting table 41 is configured such that the insulating plate 44 is supported by a support table 45 composed of a conductor, and the support table 45 is interposed on the support table 45 by a lifting mechanism composed of, for example, a ball screw mechanism 46. The mounting position of the chamber 4B and the processing position shown in Fig. 4 are freely movable. In the figure, reference numeral 47 is, for example, a bellows composed of stainless steel (SUS), and the support table 45 is electrically connected to the processing chamber 4 via the bellows 47.
在前述載置台41的內部形成有用來令冷媒流通之冷媒室48，藉由此方式，形成為載置台41表面控制在例如40℃程度，利用該載置台41的溫度及來自電漿的受熱，使晶圓W控制在特定溫度例如60℃程度。另外，在載置台41的內部設有氣體流路49，以對靜電夾盤42與晶圓W背面之間，供應當作冷卻氣體之背面氣體，調整晶圓W的溫度的方式構成。In the inside of the mounting table 41, a refrigerant chamber 48 for circulating a refrigerant is formed. In this manner, the surface of the mounting table 41 is controlled to, for example, 40 ° C, and the temperature of the mounting table 41 and the heat from the plasma are used. The wafer W is controlled to a specific temperature such as 60 °C. Further, a gas flow path 49 is provided inside the mounting table 41, and a back surface gas serving as a cooling gas is supplied between the electrostatic chuck 42 and the back surface of the wafer W to adjust the temperature of the wafer W.
與處理室4之頂壁部分的前述載置台41相對向的區域係作為兼作為上部電極使用的氣體供應室5而構成。在該氣體供應室5的下面，形成多數個氣體流出孔5a，還在上面經由當作氣體供應手段之氣體供應路，連接作為第1處理氣體源之例如CF4 氣體源52A、及C4 F8 氣體源52B，並且連接作為第2處理氣體源之例如SF6 氣體源52C、及CHF3 氣體源52D。圖中，MA、MB、MC、MD為質量流量控制器，VA、VB、VC、VD為氣閥，藉由這些元件而構成流量調整手段。以此方式，形成為第1處理氣體或是第2處理氣體經由氣體供應室5，從氣體流出孔5a面對載置台41，大致均等地供應給該載置台41之載置面的面內全體。A region facing the above-described mounting table 41 of the top wall portion of the processing chamber 4 is configured as a gas supply chamber 5 which also serves as an upper electrode. A plurality of gas outflow holes 5a are formed under the gas supply chamber 5, and a gas supply path as a gas supply means is connected to the above, for example, CF 4 gas sources 52A and C 4 F which are sources of the first process gas are connected. The gas source 52B is connected to, for example, the SF 6 gas source 52C and the CHF 3 gas source 52D as the second processing gas source. In the figure, MA, MB, MC, and MD are mass flow controllers, and VA, VB, VC, and VD are gas valves, and these components constitute a flow rate adjusting means. In this manner, the first processing gas or the second processing gas is formed in the in-plane surface of the mounting surface of the mounting table 41 so as to be substantially uniformly supplied from the gas outflow hole 5a to the mounting table 41 via the gas supply chamber 5. .
另外，在處理是4之上部室4A的周圍，配置具備有當作磁場形成手段之複數個各向異性扇形柱狀磁鐵之雙極環形磁鐵61，形成為可以將特定的磁場例如100G施加到上部室4A內。進而，在前述載置台41，經由整合器62連接當作電漿形成用的高頻供應手段之高頻電源部63，形成為特定的頻率例如13.56 MHz的高頻電力，從該高頻電源部63供應給載置台41。以此方式，前述氣體供應室5及載置台41功能上作為一對的電極，可以在氣體供應室5與載置台41之間令高頻產生來將上述處理氣體予以電漿化。這種處理室4內形成為利用真空排氣手段54，經由壓力調整手段54A、排氣路53，直到特定的真空度為止進行排氣。圖中，圖號55為晶圓的搬運出入口，圖號56為用來開關前述搬運出入口55之閘閥。Further, a bipolar ring magnet 61 having a plurality of anisotropic sector-shaped columnar magnets as magnetic field forming means is disposed around the upper chamber 4A, so that a specific magnetic field such as 100 G can be applied to the upper portion. Inside chamber 4A. Further, the high-frequency power supply unit 63, which is a high-frequency supply means for forming a plasma, is connected to the mounting table 41 via the integrator 62, and is formed into a high-frequency power of a specific frequency, for example, 13.56 MHz, from the high-frequency power supply unit. 63 is supplied to the stage 41. In this manner, the gas supply chamber 5 and the mounting table 41 function as a pair of electrodes, and the processing gas can be plasma-generated by generating a high frequency between the gas supply chamber 5 and the mounting table 41. In the processing chamber 4, the vacuum exhausting means 54 is formed, and the exhaust gas is exhausted through the pressure adjusting means 54A and the exhaust path 53 until a specific degree of vacuum. In the figure, reference numeral 55 is a conveyance port of the wafer, and reference numeral 56 is a gate valve for opening and closing the conveyance port 55.
另外，在該電漿處理裝置10，設有當作控制手段之例如由電腦所組成之控制部57，該控制部57具備有由程式、記憶體、CPU所組成之資料處理部等，前述程式是以從控制部57來將控制訊號傳送到流量調整手段50或壓力調整手段54A等之電漿處理裝置10的各部位，對晶圓W施予電漿處理的方式組裝命令。另外，例如前述記憶體具備有寫入處理壓力、處理時間、氣體流量、電力值等之處理參數的值之區域，CPU執行程式中的各命令時，讀出這些處理參數，與該參數值相對應的控制訊號，傳送給該電漿處理裝置10的各部位。該程式(也包括有關處理參數的輸入操作或顯示之程式)，儲存在電腦記憶媒體例如軟碟、光碟、MO(磁光碟)等的記憶體58，安裝至控制部57。Further, the plasma processing apparatus 10 is provided with a control unit 57 composed of, for example, a computer as a control means, and the control unit 57 is provided with a data processing unit including a program, a memory, and a CPU. The control unit 57 transmits a control signal to each part of the plasma processing apparatus 10 such as the flow rate adjusting means 50 or the pressure adjusting means 54A, and applies a plasma to the wafer W to assemble the command. Further, for example, the memory includes an area having a value of a processing parameter such as a processing pressure, a processing time, a gas flow rate, and a power value, and when the CPU executes each command in the program, the processing parameters are read out, and the parameter value is compared with the parameter value. Corresponding control signals are transmitted to the various parts of the plasma processing apparatus 10. The program (including a program for inputting or displaying a processing parameter) is stored in a memory 58 of a computer memory medium such as a floppy disk, a compact disc, an MO (magneto-optical disc), and the like, and is attached to the control unit 57.
接著，說明利用這種電漿處理裝置10來進行之蝕刻處理。首先，開啟閘閥(未圖示)，經由晶圓搬運部(未圖示)，將該表面具備有第1圖所示的構成之晶圓W，從搬運出入口55搬入到處理室4內，對前述載置位置上的載置台41上進行收授。然後，令載置台41上升到前述處理位置為止，利用真空排氣手段54，經由壓力調整手段54A，直到特定的真空度例如5.3 Pa(40 mTorr)為止，將處理室4內予以排氣。接著，從氣體供應室5，例如分別以100 sccm、30 sccm流量來導入屬於第1處理氣體的CF4 氣體及C4 F8 氣體。Next, an etching process performed by the plasma processing apparatus 10 will be described. First, a gate valve (not shown) is opened, and the wafer W having the structure shown in FIG. 1 is provided on the surface via a wafer transfer unit (not shown), and is carried into the processing chamber 4 from the transport inlet 55. The placement on the mounting table 41 at the above-described placement position is performed. Then, the mounting table 41 is raised to the processing position, and the inside of the processing chamber 4 is exhausted by the vacuum exhausting means 54 through the pressure adjusting means 54A until a specific degree of vacuum, for example, 5.3 Pa (40 mTorr). Next, CF 4 gas and C 4 F 8 gas belonging to the first processing gas are introduced from the gas supply chamber 5 at a flow rate of, for example, 100 sccm and 30 sccm, respectively.
一方面，從高頻電源部63，將特定的頻率例如13.56 MHz的高頻，例如以1400 W的電力，供應給載置台41。藉由此方式，在屬於上部電極之氣體供應室5與屬於下部電極之載置台41之間形成高頻電場。此處，上部室4A內則利用雙極環形磁鐵61來形成水平磁場，所以會在晶圓W存在的處理空間形成垂直交錯電磁場，利用藉此所產生之電子的漂移來生成磁控管放電。然後，利用磁控管放電，使第1處理氣體電漿化，利用該電漿，如同前述蝕刻晶圓W上的遮罩層33及中間層32。On the other hand, from the high-frequency power supply unit 63, a specific frequency, for example, a high frequency of 13.56 MHz, for example, 1400 W of electric power, is supplied to the stage 41. In this way, a high-frequency electric field is formed between the gas supply chamber 5 belonging to the upper electrode and the mounting table 41 belonging to the lower electrode. Here, since the horizontal magnetic field is formed by the bipolar ring magnet 61 in the upper chamber 4A, a vertical staggered electromagnetic field is formed in the processing space where the wafer W exists, and the magnetron discharge is generated by the drift of the electrons generated thereby. Then, the first processing gas is plasma-formed by magnetron discharge, and the mask layer 33 and the intermediate layer 32 on the wafer W are etched using the plasma.
接著，第1處理氣體停止導入，利用真空排氣手段54，經由壓力調整手段54A，直到特定的真空度例如2.65Pa(20mTorr)為止，將處理室4內予以排氣。接著，從氣體供應室5，例如分別以30sccm、60sccm流量來導入屬於第2處理氣體的SF6 氣體及CHF3 氣體。Then, the first processing gas is stopped and introduced into the processing chamber 4 by the vacuum exhausting means 54 through the pressure adjusting means 54A until a specific degree of vacuum is, for example, 2.65 Pa (20 mTorr). Next, SF 6 gas and CHF 3 gas belonging to the second processing gas are introduced from the gas supply chamber 5 at a flow rate of, for example, 30 sccm and 60 sccm, respectively.
一方面，從高頻電源部63，將特定的頻率例如13.56MHz的高頻，例如以400W的電力，供應給載置台41。藉由此方式，如同前述在晶圓W存在的處理空間生成磁控管放電。然後，利用磁控管放電，使第2處理氣體電漿化，利用該電漿，如同前述蝕刻晶圓W上的中間層32及透鏡材料層31。以此方式，表面形成有微透鏡3的晶圓W，利用晶圓搬運部(未圖示)，經由搬運出入口55，搬出到處理室4的外部。On the other hand, the high-frequency power supply unit 63 supplies a high frequency, for example, a high frequency of 13.56 MHz, for example, 400 W, to the mounting table 41. In this way, a magnetron discharge is generated in the processing space in which the wafer W exists as described above. Then, the second processing gas is plasma-formed by magnetron discharge, and the plasma is used to etch the intermediate layer 32 and the lens material layer 31 on the wafer W as described above. In this manner, the wafer W on which the microlenses 3 are formed on the surface is carried out to the outside of the processing chamber 4 via the transfer inlet 55 by the wafer transfer unit (not shown).
以上，上述的實施形態中，在遮罩層33與透鏡材料層31之間設置中間層32，首先，在特定的條件下，使用遮罩層33來蝕刻由有機材料所組成之中間層32，增大該中間層32的透鏡形狀之後，使用該中間層32來作為遮罩，蝕刻由無機材料所組成之透鏡材料層31。因而，導致透鏡形狀大於遮罩層33之中間層32的形狀複製到透鏡材料層31，以此方式，可以形成透鏡形狀大於遮罩層33之微透鏡3。藉由此方式，可以比初期間隔d1還要更縮窄微透鏡3的間隔D1，選擇蝕刻條件的話，可以形成間隔D1為零，間隔D2儘可能接近零之微透鏡3。As described above, in the above embodiment, the intermediate layer 32 is provided between the mask layer 33 and the lens material layer 31. First, under the specific conditions, the mask layer 33 is used to etch the intermediate layer 32 composed of an organic material. After the lens shape of the intermediate layer 32 is increased, the intermediate layer 32 is used as a mask to etch the lens material layer 31 composed of an inorganic material. Thus, the shape of the intermediate layer 32 which causes the lens shape to be larger than the mask layer 33 is copied to the lens material layer 31, and in this way, the microlens 3 having a lens shape larger than the mask layer 33 can be formed. In this way, the interval D1 of the microlenses 3 can be narrowed more than the initial interval d1, and if the etching conditions are selected, the microlens 3 having the interval D1 of zero and the interval D2 as close as possible to zero can be formed.
此處，假如針對不設置中間層32，將遮罩層33與由SiN膜所組成之透鏡材料層31予以層積，使用含有SF6 氣體及CHF3 氣體之處理氣體來形成微透鏡3的情況進行探討，如同前述，SiN膜蝕刻則會因N2 氣體的存在而防礙C自由基等的堆積，成膜性比有機膜蝕刻還要小，所以前述堆積物填入蝕刻初期擴張之透鏡材料層31的間隔D1不容易進展。Here, if the intermediate layer 32 is not provided, the mask layer 33 and the lens material layer 31 composed of the SiN film are laminated, and the processing gas using the SF 6 gas and the CHF 3 gas is used to form the microlens 3 As described above, the SiN film etching hinders the deposition of C radicals or the like due to the presence of N 2 gas, and the film formation property is smaller than that of the organic film etching, so that the deposit is filled with the lens material which is expanded at the initial stage of etching. The interval D1 of the layer 31 is not easy to progress.
此時，也考慮到藉由長時間進行蝕刻處理，令成膜性增加，並令前述堆積物填入前述間隔D1進展，不過前述SiN膜，為了要確保膜厚的高面內均等性，1μm程度的膜厚為極限，具有無法超過該膜厚的背景，無法加長蝕刻時間。受到這樣限制之膜厚當中，因無法令成膜性增加，所以被推認為比遮罩層33的初期間隔d1還要更縮窄微透鏡3的間隔D1會有困難。In this case, it is also considered that the film formation property is increased by the etching treatment for a long period of time, and the deposit is filled in the interval D1. However, in order to ensure high in-plane uniformity of the film thickness, the SiN film is 1 μm. The film thickness of the degree is the limit, and the background cannot exceed the film thickness, and the etching time cannot be lengthened. Among the film thicknesses thus restricted, since the film formation property cannot be increased, it is considered that it is difficult to narrow the interval D1 of the microlenses 3 more than the initial interval d1 of the mask layer 33.
此處，該透鏡材料層31蝕刻係經由控制透鏡材料層31對於中間層32的蝕刻選擇比(((透鏡材料層31的蝕刻速度)/(中間層32的蝕刻速度))，以下稱為「蝕刻選擇比」)，由後述的實施例能明白，可以控制微透鏡3的透鏡形狀。Here, the lens material layer 31 is etched by controlling the etching selectivity ratio of the lens material layer 31 to the intermediate layer 32 (((etching speed of the lens material layer 31) / (etching speed of the intermediate layer 32)), hereinafter referred to as " The etching selection ratio") can be understood from the examples described later, and the lens shape of the microlens 3 can be controlled.
此時，該蝕刻選擇比可以經由調整SF6 氣體及CHF3 氣體的流量比來進行控制。也就是透鏡材料層31蝕刻係如同前述，從該SF6 氣體及CHF3 氣體所解離出來之解離生成物中的F自由基作為蝕刻種來作用，C自由基等作為堆積種來作用，所以經由調整這些F自由基的量及C自由基等的量，就可以調整蝕刻性或堆積性，藉由此方式，可以進行蝕刻選擇比的控制。At this time, the etching selection ratio can be controlled by adjusting the flow ratio of the SF 6 gas and the CHF 3 gas. In other words, the etching of the lens material layer 31 is as described above, and the F radicals in the dissociated product dissociated from the SF 6 gas and the CHF 3 gas act as an etching species, and C radicals or the like act as a deposition species, so that By adjusting the amount of these F radicals and the amount of C radicals or the like, the etching property or the deposition property can be adjusted, and in this way, the etching selectivity can be controlled.
然後，由後述的實施被認定：前述蝕刻選擇比很小，則相對於蝕刻性的堆積性變小，一方面前述蝕刻選擇比很大，則相對於蝕刻性的堆積性變大，而透鏡形狀變大、前述蝕刻選擇比過度變大，則相對於蝕刻性的堆積性過度變大，蝕刻速度降低，而會發生蝕刻停止、蝕刻選擇比會對晶圓面內之蝕刻速度的均等性造成影響，因而必須根據這些因素來求取蝕刻選擇比的適當範圍。Then, it is confirmed that the deposition selectivity is small, and the deposition property with respect to etchability is small. On the other hand, when the etching selectivity is large, the deposition property with respect to etching property is large, and the lens shape is large. When the etching selectivity is excessively large, the deposition property with respect to the etching property is excessively increased, the etching rate is lowered, and etching is stopped, and the etching selectivity ratio affects the uniformity of the etching rate in the wafer surface. Therefore, the appropriate range of the etching selectivity ratio must be obtained based on these factors.
因而，在衡量生產線上的流量的處理時間內，控制透鏡形狀，而且在提高透鏡形狀的狀態下，形成微透鏡3，最好是在前述蝕刻選擇比成為1.0以上且1.6以下的蝕刻條件下，進行蝕刻處理，尤其蝕刻選擇比為1.4以上且1.6以下的範圍的話，可以形成具備有與初期間隔d1相同程度或更小的間隔D1之微透鏡3，進而經由壓縮蝕刻選擇比，可以形成間隔D1為零，間隔D2儘可能接近零之微透鏡。Therefore, in the processing time for measuring the flow rate on the production line, the shape of the lens is controlled, and the microlens 3 is formed in a state in which the shape of the lens is increased, preferably under the etching conditions in which the etching selectivity is 1.0 or more and 1.6 or less. When the etching treatment is performed, in particular, when the etching selectivity is in the range of 1.4 or more and 1.6 or less, the microlens 3 having the interval D1 which is equal to or smaller than the initial interval d1 can be formed, and the interval can be formed by the compression etching selection ratio. Zero, the microlens with the interval D2 as close as possible to zero.
另外，藉由控制供應到處理容器4內之高頻電力的供應量或處理容器4內的處理壓力，如同後述也可以控制透鏡形狀，又可以調整間隔D1的大小。該理由被推認為因藉由變化前述高頻電力的供應量或處理壓力，變化施加給SF6 氣體及CHF3 氣體的能量，藉由此方式使從SF6 氣體及CHF3 氣體所解離出來之解離生成物中的F自由基或C自由基等的產生量不相同，故即使SF6 氣體與CHF3 氣體的流量比相同，對蝕刻有幫助之F自由基的量或對堆積有幫助之C自由基等的量仍會變化之故。因此，在透鏡材料層31的蝕刻速度變成大於中間層32的蝕刻速度的蝕刻條件下進行蝕刻，最好是用來縮窄間隔D1，藉由調整蝕刻選擇比、高頻電力的供應量或處理壓力等之蝕刻處理的參數，可以形成透鏡形狀的調整範圍變大，間隔D1或間隔D2接近零或為零之微透鏡3。Further, by controlling the supply amount of the high-frequency power supplied into the processing container 4 or the processing pressure in the processing container 4, the lens shape can be controlled as will be described later, and the size of the interval D1 can be adjusted. This reason is considered to be because the energy supplied to the SF 6 gas and the CHF 3 gas is changed by changing the supply amount or the processing pressure of the high-frequency power, thereby dissociating the gas from the SF 6 gas and the CHF 3 gas. Since the amount of generation of F radicals, C radicals, and the like in the dissociation product is different, even if the flow ratio of the SF 6 gas to the CHF 3 gas is the same, the amount of F radicals that contribute to the etching or the accumulation of C is helpful. The amount of free radicals and the like will still change. Therefore, etching is performed under etching conditions in which the etching rate of the lens material layer 31 becomes larger than the etching rate of the intermediate layer 32, and it is preferable to narrow the interval D1 by adjusting the etching selection ratio, the supply amount of the high-frequency power, or the processing. The parameters of the etching process such as pressure can form the microlens 3 in which the adjustment range of the lens shape becomes large, and the interval D1 or the interval D2 approaches zero or zero.
以上，本發明中，應用由有機材料所形成的遮罩層33及中間層32、以及由無機材料所組成的透鏡材料層31之3層構造，來形成微透鏡，所以經選擇蝕刻條件，可以形成能夠控制透鏡形狀，而透鏡寬度大於遮罩層33的透鏡形狀，相鄰透鏡彼此間的透鏡間距離(間隔D1)為0~0.1μm程度之極小的由無機材料所組成之微透鏡3。這種微透鏡3因對感光部21的聚光度很大，所以可以確保很高的感度。As described above, in the present invention, the three layers of the mask layer 33 and the intermediate layer 32 formed of an organic material and the lens material layer 31 composed of an inorganic material are used to form the microlens, so that the etching conditions can be selected. A microlens 3 composed of an inorganic material which is capable of controlling the lens shape and having a lens width larger than that of the mask layer 33 and having an inter-lens distance (interval D1) between adjacent lenses of 0 to 0.1 μm is formed. Since the microlens 3 has a large concentration of the light-receiving portion 21, it is possible to ensure high sensitivity.
如此由無機材料所形成之微透鏡3可以達到實用化，所以提高依照目的的波長區域，從有機材料或無機材料來自由選擇微透鏡3的材料之材料選擇的自由度。另外，預測經由將由不同材料所形成的微透鏡3，橫跨複數層設置在固體攝像元件，也能夠藉由各微透鏡3來選擇性進行各別特定波長領域的聚光，補償各別的不足夠波長領域。The microlens 3 formed of such an inorganic material can be put into practical use, so that the wavelength region according to the purpose is improved, and the degree of freedom of selection of the material of the material from which the microlens 3 is selected from the organic material or the inorganic material is increased. Further, it is predicted that by providing the microlenses 3 made of different materials and arranging the plurality of layers on the solid-state imaging element, it is also possible to selectively condense the respective specific wavelength regions by the respective microlenses 3, thereby compensating for the respective A sufficient wavelength field.
以上，前述第1處理氣體可以使用從CF4 氣體、SF6 氣體、C2 F6 氣體、C3 F8 氣體所選出的氣體、與從C4 F8 氣體、C5 F8 氣體、C4 F8 氣體、C2 F6 氣體、C3 F8 氣體所選出的氣體組合起來之氣體。另外，第2處理氣體可以是以氧(O2 )氣組合在SF6 氣體及CHF3 氣體中的方式形成。As described above, the first processing gas may be a gas selected from CF 4 gas, SF 6 gas, C 2 F 6 gas, C 3 F 8 gas, and C 4 F 8 gas, C 5 F 8 gas, C 4 . A gas in which a gas selected from F 8 gas, C 2 F 6 gas, and C 3 F 8 gas is combined. Further, the second processing gas may be formed by combining oxygen (O 2 ) gas in the SF 6 gas and the CHF 3 gas.
另外，前述中間層32及遮罩層33都是由有機材料所構成，不過該兩層也可以由相同種類的膜來構成，還可以利用不同種類的膜來構成。該兩層由相同的膜構成的情況，前述遮罩層33及中間層32則是由例如酚系抗蝕膜、丙烯基系抗蝕膜、KrF抗蝕膜、將環烯烴順丁烯二酸酐作為平台之抗蝕膜(COMA抗蝕膜)所構成。此情況下，遮罩層33與中間層32的蝕刻選擇比變成相同，所以遮罩層33的形狀直接複製到中間層32，對於透鏡形狀容易進行控制的這點則具有效果。Further, the intermediate layer 32 and the mask layer 33 are both made of an organic material, but the two layers may be formed of the same type of film or may be formed of different types of films. In the case where the two layers are composed of the same film, the mask layer 33 and the intermediate layer 32 are, for example, a phenol-based resist film, an acrylic-based resist film, a KrF resist film, and a cycloolefin maleic anhydride. It is composed of a resist film (COMA resist film) as a platform. In this case, since the etching selection ratio of the mask layer 33 and the intermediate layer 32 becomes the same, the shape of the mask layer 33 is directly copied to the intermediate layer 32, and the lens shape is easily controlled.
進而，前述中間層32也可以形成1層以上的複數層，這些層可以由相同種類的有機膜或不同種類的有機膜形成。設置層積複數層的中間層，中間層32的透鏡形狀之調整的幅度則會變大，複製這形狀的話，針對微透鏡3的透鏡形狀，調整的幅度也會變大。Further, the intermediate layer 32 may be formed of a plurality of layers of one or more layers, and these layers may be formed of the same type of organic film or different types of organic films. When the intermediate layer of the plurality of laminated layers is provided, the width of the adjustment of the lens shape of the intermediate layer 32 is increased. When the shape is reproduced, the amplitude of the adjustment of the lens shape of the microlens 3 is also increased.
進而，形成透鏡材料層31的無機材料，可以使用氧化矽膜或氮氧化矽膜等。此處，針對使用氧化矽膜來作為透鏡材料層31的情況進行說明。該氧化矽膜係指含有矽和氧(O)的膜，一般所熟知的是二氧化矽膜(SiO2 膜)，所以此處則以SiO2 膜來進行說明。首先，列舉SiO2 膜之形成方法的一例，用來形成SiO2 膜的原料氣體係使用例如四乙基矽烷氣體(tetraethylorthosilicate,Si(OC2 H5 )4 )等之有機來源的蒸氣及氧氣，令該四乙基矽烷氣體及氧氣電漿化，利用含在電漿中的矽和氧之各種活性種，使例如4μm膜厚的SiO2 膜形成在前述濾色層26的上面。Further, as the inorganic material forming the lens material layer 31, a ruthenium oxide film or a ruthenium oxynitride film or the like can be used. Here, a case where a hafnium oxide film is used as the lens material layer 31 will be described. The ruthenium oxide film refers to a film containing ruthenium and oxygen (O), and a ruthenium dioxide film (SiO 2 film) is generally known. Therefore, the SiO 2 film will be described here. First, it cited example of a method of forming the SiO 2 film, the raw material gas for forming the SiO 2 film system tetraethyl Silane gas (tetraethylorthosilicate, (OC 2 H 5 ) 4 Si) , etc. vapor and oxygen derived from an organic e.g., The tetraethyl decane gas and oxygen are plasma-formed, and a SiO 2 film having a film thickness of, for example, 4 μm is formed on the color filter layer 26 by using various active species of cerium and oxygen contained in the plasma.
然後，由SiO2 膜所組成之透鏡材料層31的蝕刻處理則是與SiN膜的蝕刻處理同樣，被推論為將SF6 氣體及CF3 氣體予以電漿化，從該兩氣體所解離出來之解離生成物中的F自由基作為蝕刻種來作用，C自由基、CF自由基、CF2 自由基、CF3 自由基等作為堆積種來作用，一面同時進行F自由基的蝕刻及CF自由基等的堆積，一面逐漸進展蝕刻。Then, the etching treatment of the lens material layer 31 composed of the SiO 2 film is the same as the etching treatment of the SiN film, and it is inferred that the SF 6 gas and the CF 3 gas are plasma-treated and dissociated from the two gases. The F radical in the dissociation product acts as an etching species, and C radicals, CF radicals, CF 2 radicals, and CF 3 radicals act as a deposition species, and simultaneously perform F radical etching and CF radicals. When the stacking is done, the etching progresses gradually.
此時，針對SiO2 膜，被認為CF自由基(CF＊ )、CF2 自由基(CF2 ＊ )、CF3 自由基(CF2 ＊ )等都是依照以下的反應來作用。At this time, it is considered that the CF radical (CF * ), the CF 2 radical (CF 2 * ), the CF 3 radical (CF 2 * ), and the like act on the SiO 2 film in accordance with the following reaction.
3/4SiO2 ＋CF3 ＊ → 3/4SiF4 ＋CO＋1/2O 1/2SiO2 ＋CF2 ＊ → 1/2SiF4 ＋CO 1/4SiO2 ＋CF＊ → 1/4SiF4 ＋1/2CO＋1/2C3/4SiO 2 +CF 3 * → 3/4SiF 4 +CO+1/2O 1/2SiO 2 +CF 2 * → 1/2SiF 4 +CO 1/4SiO 2 +CF * → 1/4SiF 4 +1/2CO+1/2C
如此，SiO2 膜蝕刻被認為產生O及CO，並且C作為堆積成分來放出，利用該O或CO的影響，使成膜性小於蝕刻屬於有機膜的中間層32的情況，不過該O或CO被推認為妨礙C自由基等堆積的程度小於SiN膜蝕刻時所產生的N2 氣體。另外，由後述的實施例能夠明白，不會發生蝕刻選擇比過度變大而不進展時刻的現象，所以預測隨著蝕刻選擇比的增加，能夠形成很大透鏡形狀。Thus, the SiO 2 film etching is considered to generate O and CO, and C is released as a deposition component, and the film formation property is made smaller than the etching of the intermediate layer 32 belonging to the organic film by the influence of the O or CO, but the O or CO It is thought that the degree of deposition of C radicals or the like is hindered to be smaller than that of the N 2 gas generated when the SiN film is etched. Further, as will be understood from the examples described later, the phenomenon that the etching selection ratio is excessively increased and the timing is not advanced does not occur. Therefore, it is predicted that a large lens shape can be formed as the etching selectivity ratio increases.
因而，透鏡材料層31為SiO2 膜的情況，在前述蝕刻選擇比變成1.7以上的蝕刻條件下進行蝕刻處理，在衡量生產線上的流量的處理時間內，透鏡形狀可以控制在所要的範圍的狀態下，可以形成透鏡3，選擇蝕刻條件，就可以形成間隔D1小於初期間隔d1，進而間隔D1為零，間隔D2儘可能接近零之微透鏡。另外，以該蝕刻選擇比來進行蝕刻的情況，由後述的實施例能夠明白，蝕刻速度的面內均等性良好。Therefore, in the case where the lens material layer 31 is a SiO 2 film, the etching process is performed under the etching conditions in which the etching selectivity ratio becomes 1.7 or more, and the lens shape can be controlled to a desired range in the processing time for measuring the flow rate on the production line. Next, the lens 3 can be formed, and the etching conditions can be selected to form a microlens having an interval D1 smaller than the initial interval d1 and further having an interval D1 of zero and the interval D2 being as close as possible to zero. Further, in the case where the etching is performed by the etching selection ratio, it can be understood from the examples described later that the in-plane uniformity of the etching rate is good.
如此，透鏡材料層31為SiN膜、SiO2 膜的情況，選擇蝕刻條件，就可以形成間隔D1、D2為零或儘可能接近零的微透鏡3，因而被推認為將氮氧化矽膜作為材料來形成微透鏡3的情況也會獲得同樣的效果。該氮氧化矽膜為含有矽和氮和氧的膜，此處則是SiON膜，不過SiON膜係使用例如含有矽和氮和氧的處理氣體，藉由電漿CVD(chemical vapor deposition)法所形成。As described above, in the case where the lens material layer 31 is a SiN film or a SiO 2 film, the microlens 3 having the interval D1, D2 being zero or as close as possible to zero can be formed by selecting etching conditions, and thus it is considered that the yttrium oxynitride film is used as a material. The same effect can be obtained also in the case of forming the microlens 3. The ruthenium oxynitride film is a film containing ruthenium and nitrogen and oxygen, and here is a SiON film. However, the SiON film is made of, for example, a treatment gas containing ruthenium and nitrogen and oxygen by a chemical vapor deposition method. form.
另外，本發明的微透鏡，也可以使用第5(a)圖或第5(b)圖所示的構造之形成在CCD固體攝像元件或CMOS感測器上之微透鏡3。第5(a)圖為除了形成在表面的微透鏡3之外還具備有層內微透鏡27的例子，該層內微透鏡27係在第1圖的構造中被形成在濾色層26的下層。圖中，圖號28為形成在層內微透鏡27的表面之平坦化膜(也有只有濾色層26的情況)，其他的構造則與第1圖所示的構造相同。這種構造係表面的微透鏡3以本發明的手法所形成。另外，第5(b)圖為在第1圖的構造中在遮光膜24的上層直接形成微透鏡3的例子，該表面的微透鏡3係以本發明的手法所形成。Further, in the microlens of the present invention, the microlens 3 formed on the CCD solid-state imaging device or the CMOS sensor may be used as shown in the fifth (a) or fifth (b) configuration. Fig. 5(a) shows an example in which an in-layer microlens 27 is provided in addition to the microlens 3 formed on the surface, and the intra-layer microlens 27 is formed in the color filter layer 26 in the configuration of Fig. 1. Lower level. In the figure, reference numeral 28 is a planarizing film formed on the surface of the intra-layer microlens 27 (in the case where only the color filter layer 26 is present), and other structures are the same as those shown in Fig. 1. The microlens 3 of such a structure is formed by the method of the present invention. Further, Fig. 5(b) shows an example in which the microlens 3 is directly formed on the upper layer of the light shielding film 24 in the structure of Fig. 1, and the microlens 3 on the surface is formed by the method of the present invention.
以下，針對為了要確認本發明的效果之實施例進行說明。以下的實驗中，如第1圖所示，使用：在Si基板2上形成有感光部21、垂直暫存器22、導電膜23以及遮光膜24，再在該上方，從下側起依序形成有平坦化膜25、濾色層26、透鏡材料層31、中間層32以及形成為特定的透鏡形狀之遮罩層33之晶圓W。蝕刻裝置則是採用上述第4圖所示的電漿蝕刻裝置。Hereinafter, an embodiment for confirming the effects of the present invention will be described. In the following experiment, as shown in Fig. 1, a photosensitive portion 21, a vertical register 22, a conductive film 23, and a light shielding film 24 are formed on the Si substrate 2, and then the upper side is sequentially arranged from the lower side. A wafer W having a planarizing film 25, a color filter layer 26, a lens material layer 31, an intermediate layer 32, and a mask layer 33 formed into a specific lens shape is formed. The etching apparatus uses the plasma etching apparatus shown in Fig. 4 described above.
如第6(a)圖所示，針對在膜厚1μm之透鏡材料層31的上面，依序形成有由酚系抗蝕膜所形成之中間層32、及由酚系抗蝕膜所形成，被形成為特定的透鏡形狀之遮罩層33之8英吋的晶圓W，在以下的條件下進行蝕刻，針對遮罩層33、中間層32、透鏡材料層31(微透鏡3)之各別的透鏡形狀，使用掃描型電子顯微鏡(SEM)來將該平面形狀予以照像，根據該照像，分別針對遮罩層33、中間層32、透鏡材料層31，測定間隔D1。利用前述SEM照像的照片(以下，稱為「SEM照片」)所呈現的形狀、及前述間隔D1一併顯示在第6(a)圖中。As shown in Fig. 6(a), an intermediate layer 32 formed of a phenol-based resist film and a phenol-based resist film are formed on the upper surface of the lens material layer 31 having a film thickness of 1 μm. The 8-inch wafer W of the mask layer 33 formed into a specific lens shape is etched under the following conditions, and is applied to each of the mask layer 33, the intermediate layer 32, and the lens material layer 31 (microlens 3). The other lens shape was photographed using a scanning electron microscope (SEM), and the interval D1 was measured for the mask layer 33, the intermediate layer 32, and the lens material layer 31 based on the photograph. The shape represented by the photograph of the SEM photograph (hereinafter referred to as "SEM photograph") and the above-described interval D1 are collectively shown in Fig. 6(a).
〔中間層32的蝕刻條件〕處理氣體 ：CF4 /C4 F8 ＝100/30 sccm高頻電源的電力 ：1400 W處理壓力 ：5.3 Pa(40 mTorr)載置台的設定溫度 ：0℃處理時間 ：利用EPD(電漿發光光譜分析儀的終點檢測位置裝置)，進行199秒的蝕刻。此處，蝕刻時的終點則是根據CF自由基的發光光譜強度(波長260 nm)與CN自由基的發光光譜強度(波長387.2 nm)的比率等的運算結果來進行檢測，停止蝕刻[etching conditions of the intermediate layer 32] Processing gas: CF 4 /C 4 F 8 =100/30 sccm Power of the high-frequency power source: 1400 W Processing pressure: 5.3 Pa (40 mTorr) Setting temperature of the mounting table: 0 ° C processing time : Etching was performed for 199 seconds using EPD (End Point Detection Position Device of Plasma Light Emitting Spectrum Analyzer). Here, the end point at the time of etching is detected based on the calculation result of the ratio of the emission intensity (wavelength 260 nm) of the CF radical to the emission intensity of the CN radical (wavelength: 387.2 nm), and the etching is stopped.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：SF6 /CHF3 /O3 ＝60/50/25 sccm蝕刻選擇比 ：0.95高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻750 nm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: SF 6 /CHF 3 /O 3 =60/50/25 sccm Etching Selection Ratio: 0.95 High Frequency Power Supply: 400 W Processing Pressure: 2.65 Pa (20 mTorr) Set temperature of the set: 0 ° C processing time: until the lens material layer 31 is etched 750 nm, stop etching
(比較例1)如第6(b)圖所示，針對在膜厚1μm之透鏡材料層31的上面，依序形成由酚系抗蝕膜所形成，呈特定的形狀形成之遮罩膜33之晶圓W，在以下的條件下進行蝕刻，再以掃描型電子顯微鏡(SEM)，針對遮罩膜33、透鏡材料層31之透鏡形狀的平面形狀進行照像，根據該照片，針對遮罩膜33、透鏡材料層31測定間隔D1。該SEM照片所呈現的形狀、及前述間隔D1一併顯示在第6(b)圖中。(Comparative Example 1) As shown in Fig. 6(b), a mask film 33 formed of a phenol-based resist film and formed into a specific shape is formed in order on the upper surface of the lens material layer 31 having a film thickness of 1 μm. The wafer W is etched under the following conditions, and the planar shape of the lens shape of the mask film 33 and the lens material layer 31 is photographed by a scanning electron microscope (SEM), and the mask is masked according to the photograph. The film 33 and the lens material layer 31 measure the interval D1. The shape of the SEM photograph and the interval D1 are shown together in the sixth (b) diagram.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：SF6 /CHF3 ＝60/60 sccm蝕刻選擇比 ：1.09高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：40℃處理時間 ：直到透鏡材料層31蝕刻750 nm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: SF 6 /CHF 3 = 60/60 sccm Etching Selection Ratio: 1.09 High-frequency power supply: 400 W Processing pressure: 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 40 ° C processing time: until the lens material layer 31 is etched 750 nm, stop etching
(實驗結果)有關前述間隔D1(d1)，實施例1中，遮罩膜33為320 nm，中間層32為100 nm，微透鏡3為358 nm，比較例1中，遮罩膜33為500 nm，微透鏡3為700 nm。因此，被認定：前述間隔D1則是實施例1中微透鏡3比遮罩膜33大約寬1.1倍，相對於此比較例1中微透鏡3比遮罩膜33大約寬1.4倍。(Experimental Results) Regarding the aforementioned interval D1 (d1), in the embodiment 1, the mask film 33 was 320 nm, the intermediate layer 32 was 100 nm, and the microlens 3 was 358 nm. In Comparative Example 1, the mask film 33 was 500. Nm, the microlens 3 is 700 nm. Therefore, it was confirmed that the above-described interval D1 is that the microlens 3 in the first embodiment is about 1.1 times wider than the mask film 33, and the microlens 3 in the comparative example 1 is about 1.4 times wider than the mask film 33.
此處，有關蝕刻選擇比，實施例1為0.95，比較例1為1.09，比較例1較大，蝕刻選擇比較大則堆積性較強，透鏡形狀容易變大，但也因而被認定實施例1可以增大透鏡形狀，縮窄間隔D1，因此本發明的有效性被理解。另外，也確認：實施例1中之中間層32的間隔D1變成窄於遮罩膜33的間隔D1。Here, the etching selection ratio is 0.95 in the first embodiment and 1.09 in the comparative example 1, and the comparative example 1 is large. When the etching selection is relatively large, the deposition property is strong, and the lens shape is likely to be large, but the example 1 is also recognized. The lens shape can be increased to narrow the interval D1, so the effectiveness of the present invention is understood. Further, it was also confirmed that the interval D1 of the intermediate layer 32 in the first embodiment became narrower than the interval D1 of the mask film 33.
針對與實施例1－1同樣的晶圓W，在0.95~1.75的範圍改變蝕刻選擇比，對透鏡材料層31進行蝕刻，至於遮罩膜33、中間層32、透鏡材料層31，則針對平面形狀及剖面形狀進行SEM照片的照像，觀察透鏡形狀的變化，並且根據SEM照片，測定各別的間隔D1(d1)及蝕刻深度。With respect to the wafer W similar to that of Example 1-1, the etching selectivity was changed in the range of 0.95 to 1.75, and the lens material layer 31 was etched. As for the mask film 33, the intermediate layer 32, and the lens material layer 31, the plane was oriented. The shape and the cross-sectional shape were photographed in an SEM photograph, and the change in the shape of the lens was observed, and the respective intervals D1 (d1) and etching depth were measured based on the SEM photograph.
此處，蝕刻深度(蝕刻量)則是成為透鏡材料層(SiN膜)31之蝕刻量的指標，由第7(a)圖所示的中間層32進行蝕刻後之透鏡材料層31的厚度X、與第7(b)圖所示的透鏡材料層31進行蝕刻後之透鏡材料層31的厚度Y的差異(X－Y)來算出。此時，前述厚度X、Y為沒有形成透鏡形狀的區域之厚度。另外，本實施例中，利用電漿發光光譜將蝕刻終點檢測出來，藉此來進行中間層32的蝕刻，也會有中間層32結束蝕刻時，透鏡材料層31的表面部若干受到蝕刻的情況，第7(a)圖則是表示透鏡材料層31的表面受到蝕刻的狀態。另外，依照蝕刻條件也會有中間層32與透鏡材料層31的間隔D1並不是零的情況，此處則是讓該兩層持有特定間隔D1的狀態。將該SEM照片上所呈現的形狀及前述間隔D1及蝕刻深度，一併顯示在第8圖中。另外，有關蝕刻選擇比與間隔D1的關係性則顯示在第9圖中。Here, the etching depth (etching amount) is an index of the etching amount of the lens material layer (SiN film) 31, and the thickness X of the lens material layer 31 after etching by the intermediate layer 32 shown in Fig. 7(a) The difference (X-Y) between the thicknesses Y of the lens material layers 31 after the etching of the lens material layer 31 shown in Fig. 7(b) is calculated. At this time, the thicknesses X and Y are the thicknesses of the region where the lens shape is not formed. Further, in the present embodiment, the etching end point is detected by the plasma emission spectrum, whereby the etching of the intermediate layer 32 is performed, and when the intermediate layer 32 is finished etching, the surface portion of the lens material layer 31 is etched a little. The seventh (a)th diagram shows a state in which the surface of the lens material layer 31 is etched. Further, depending on the etching conditions, the interval D1 between the intermediate layer 32 and the lens material layer 31 may not be zero, and here, the two layers are held at a specific interval D1. The shape presented on the SEM photograph, the interval D1 and the etching depth are collectively shown in Fig. 8. Further, the relationship between the etching selection ratio and the interval D1 is shown in Fig. 9.
〔中間層32的蝕刻條件〕在與實施例1－1相同條件下進行。[Etching conditions of the intermediate layer 32] were carried out under the same conditions as in Example 1-1.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：如下述蝕刻選擇比 ：如下述高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻750 nm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: Etching Selection Ratio as follows: Power of the following high-frequency power source: 400 W Processing pressure: 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 0 ° C Processing time: up to the lens The material layer 31 is etched at 750 nm, and the etching is stopped.
蝕刻選擇比係藉由改變處理氣體的流量比來進行控制。蝕刻選擇比與處理氣體的流量比的關係如以下所述。The etch selectivity ratio is controlled by varying the flow ratio of the process gas. The relationship between the etching selection ratio and the flow rate ratio of the processing gas is as follows.
選擇比0.95：SF6 /CHF3 /O2 ＝60/50/25 sccm選擇比1.42：SF6 /CHF3 ＝30/60 sccm選擇比1.59：SF6 /CHF3 ＝28/60 sccm選擇比1.66：SF6 /CHF3 ＝29/60 sccm選擇比1.75：SF6 /CHF3 ＝25/60 sccmSelect ratio 0.95: SF 6 /CHF 3 /O 2 =60/50/25 sccm select ratio 1.42: SF 6 /CHF 3 =30/60 sccm select ratio 1.59: SF 6 /CHF 3 =28/60 sccm select ratio 1.66 :SF 6 /CHF 3 =29/60 sccm selection ratio 1.75: SF 6 /CHF 3 =25/60 sccm
被認定依據第8圖及第9圖來調整蝕刻選擇比，透鏡形狀會變化，可以控制間隔D1。利用該結果，蝕刻選擇比為0.95時，間隔D1變成大於初期間隔d1，但確認：隨著蝕刻選擇比的增加，前述間隔D1會變小、一方面蝕刻選擇比為1.66以上時，會發生透鏡材料層31的蝕刻深度達不到目標值的750 nm左右，且蝕刻不進展的現象。如此，蝕刻選擇比過度變大則蝕刻不進展，被推認為因F自由基的蝕刻也進展，且這以上則C自由基等的堆積就會進展，所以堆積量相對於蝕刻量的比率過度變大，發生蝕刻停止之故。It is assumed that the etching selection ratio is adjusted according to Figs. 8 and 9 and the lens shape is changed to control the interval D1. With this result, when the etching selectivity ratio is 0.95, the interval D1 becomes larger than the initial interval d1, but it is confirmed that the lens D1 becomes smaller as the etching selectivity ratio increases, and the lens occurs when the etching selectivity ratio is 1.66 or more. The etching depth of the material layer 31 is less than about 750 nm of the target value, and the etching does not progress. When the etching selectivity is excessively large, the etching does not progress, and it is considered that the etching of the F radicals progresses, and the deposition of C radicals or the like progresses, and the ratio of the deposition amount to the etching amount is excessively changed. Large, the etching stops.
藉由此方式，併用第9圖的數據，理解：為了要形成一面確保一定程度的蝕刻量，一面具有比初期間隔d1還要更窄的間隔D1之微透鏡3，最好是在蝕刻選擇比成為1.0以上且1.6以下的條件下，進行中間層32及微透鏡3的蝕刻、尤其蝕刻選擇比為1.4以上且1.6以下的範圍的話，間隔D1變成小於150 nm，可以將微透鏡3的間隔D1形成為與中間層32相同程度或更窄，則更理想。By this means, and using the data of Fig. 9, it is understood that in order to form a microlens 3 having a spacing D1 which is narrower than the initial interval d1 while ensuring a certain degree of etching amount, it is preferable to etch the selection ratio. When the etching of the intermediate layer 32 and the microlens 3 is performed under the conditions of 1.0 or more and 1.6 or less, in particular, when the etching selectivity is in the range of 1.4 or more and 1.6 or less, the interval D1 becomes less than 150 nm, and the interval D1 of the microlenses 3 can be obtained. It is more desirable to form the same degree or narrower as the intermediate layer 32.
針對與實施例1－1同樣的晶圓W，在0.86~3.25的範圍改變蝕刻選擇比，進行透鏡材料層31的蝕刻，針對透鏡材料層31的蝕刻速度、及蝕刻速度的面內均等性進行測定。前述蝕刻速度為表示經由前述晶圓面內的25部位所測定出來之蝕刻速度的平均值，蝕刻速度的面內均等性為表示經由前述晶圓面內的25部位所測定出來之蝕刻速度的偏差除以蝕刻速度的絕對值之值，且表示該值越接近零則蝕刻速度的面內均等性越高。此外，中間層32及透鏡材料層31的蝕刻條件則如以下所述。With respect to the wafer W similar to that of Example 1-1, the etching selectivity was changed in the range of 0.86 to 3.25, and the etching of the lens material layer 31 was performed, and the etching rate of the lens material layer 31 and the in-plane uniformity of the etching rate were performed. Determination. The etching rate is an average value of the etching rate measured through the 25 portions in the wafer surface, and the in-plane uniformity of the etching rate indicates the deviation of the etching rate measured through the 25 portions in the wafer surface. Divided by the value of the absolute value of the etch rate, and indicates that the closer the value is to zero, the higher the in-plane uniformity of the etch rate. Further, the etching conditions of the intermediate layer 32 and the lens material layer 31 are as follows.
〔中間層32的蝕刻條件〕在與實施例1－1相同條件下進行。[Etching conditions of the intermediate layer 32] were carried out under the same conditions as in Example 1-1.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：如下述蝕刻選擇比 ：如下述高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻750 nm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: Etching Selection Ratio as follows: Power of the following high-frequency power source: 400 W Processing pressure: 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 0 ° C Processing time: up to the lens The material layer 31 is etched at 750 nm, and the etching is stopped.
蝕刻選擇比係藉由改變處理氣體的流量比來進行控制。蝕刻選擇比與處理氣體的流量比的關係如以下所述。The etch selectivity ratio is controlled by varying the flow ratio of the process gas. The relationship between the etching selection ratio and the flow rate ratio of the processing gas is as follows.
選擇比0.86：SF6 /CHF3 /O2 ＝60/25/30 sccm選擇比0.95：SF6 /CHF3 /O2 ＝60/50/25 sccm選擇比1.42：SF6 /CHF3 ＝30/60 sccm選擇比1.59：SF6 /CHF3 ＝28/60 sccm選擇比1.66：SF6 /CHF3 ＝29/60 sccm選擇比1.75：SF6 /CHF3 ＝25/60 sccm選擇比2.17：SF6 /CHF3 ＝20/60 sccm選擇比3.25：SF6 /CHF3 ＝15/60 sccmSelectivity ratio 0.86: SF 6 /CHF 3 /O 2 =60/25/30 sccm Selectivity ratio 0.95:SF 6 /CHF 3 /O 2 =60/50/25 sccm Selectivity ratio 1.42: SF 6 /CHF 3 =30/ 60 sccm selection ratio 1.59: SF 6 /CHF 3 =28/60 sccm selection ratio 1.66: SF 6 /CHF 3 =29/60 sccm selection ratio 1.75: SF 6 /CHF 3 =25/60 sccm selection ratio 2.17: SF 6 /CHF 3 =20/60 sccm selection ratio 3.25: SF 6 /CHF 3 =15/60 sccm
處理氣體的流量比與蝕刻選擇比的關係、蝕刻速度、蝕刻速度的面內均等性一併顯示在第10圖中。經由該結果，認定蝕刻選擇比變成1.75以上，蝕刻速度的面內均等性就會急遽惡化，經由在蝕刻選擇比成為1.0~1.6的條件下進行中間層32及微透鏡3的蝕刻，確認可以確保透鏡形狀的較高面內均等性。The flow rate of the process gas is shown in Fig. 10 together with the relationship between the etching selectivity, the etching rate, and the in-plane uniformity of the etching rate. By the result, it is confirmed that the etching selectivity is 1.75 or more, and the in-plane uniformity of the etching rate is rapidly deteriorated, and etching of the intermediate layer 32 and the microlens 3 is performed under the condition that the etching selectivity is 1.0 to 1.6, and it is confirmed that the etching can be ensured. Higher in-plane uniformity of lens shape.
針對在膜厚4.2μm之透鏡材料層31的上面，依序形成有由酚系抗蝕膜所形成之中間層32、及被形成為特定的透鏡形狀之由酚系抗蝕膜所形成的遮罩層33之6英吋的晶圓W，在1.63~2.06的範圍改變蝕刻選擇比，進行透鏡材料層31的蝕刻，至於遮罩膜33、中間層32、微透鏡3，則針對平面形狀及剖面形狀進行SEM照片的照像，觀察透鏡形狀的變化，並且根據SEM形狀，測定各別的間隔D1(d1)。將該SEM照片上的形狀及間隔D1一併顯示在第11圖中。另外，有關蝕刻選擇比與間隔D1的關係性則顯示在第12圖中。On the upper surface of the lens material layer 31 having a film thickness of 4.2 μm, an intermediate layer 32 formed of a phenol-based resist film and a mask formed of a phenol-based resist film formed into a specific lens shape are sequentially formed. The 6-inch wafer W of the cap layer 33 changes the etching selectivity ratio in the range of 1.63 to 2.06, and etches the lens material layer 31. As for the mask film 33, the intermediate layer 32, and the microlens 3, the planar shape and The cross-sectional shape was photographed in an SEM photograph, and the change in the shape of the lens was observed, and the respective interval D1 (d1) was measured in accordance with the SEM shape. The shape and the interval D1 on the SEM photograph are collectively shown in Fig. 11. Further, the relationship between the etching selection ratio and the interval D1 is shown in Fig. 12.
〔中間層32的蝕刻條件〕處理氣體 ：CF4 /C4 F8 ＝100/30 sccm高頻電源的電力 ：1200 W處理壓力 ：5.3 Pa(40 mTorr)載置台的設定溫度 ：0℃處理時間 ：利用EPD，進行139秒的蝕刻，蝕刻時的終點則是根據CO自由基的發光光譜強度(波長226 nm)與CF自由基的發光光譜強度(波長260 nm)的比率之運算結果來進行檢測，停止蝕刻[etching conditions of the intermediate layer 32] Process gas: CF 4 /C 4 F 8 =100/30 sccm Power of the high-frequency power source: 1200 W Processing pressure: 5.3 Pa (40 mTorr) Setting temperature of the mounting table: 0 ° C processing time : EDT is used for 139 seconds of etching, and the end point of etching is detected based on the calculation result of the ratio of the luminescence intensity of the CO radical (wavelength 226 nm) to the luminescence intensity of the CF radical (wavelength 260 nm). Stop etching
〔透鏡材料層31的蝕刻條件〕處理氣體 ：如下述蝕刻選擇比 ：如下述高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻2.8 μm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: Etching Selection Ratio as follows: Power of the following high-frequency power source: 400 W Processing pressure: 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 0 ° C Processing time: up to the lens The material layer 31 is etched until 2.8 μm, and the etching is stopped.
蝕刻選擇比係藉由改變處理氣體的流量比來進行控制。蝕刻選擇比與處理氣體的流量比的關係如以下所述。The etch selectivity ratio is controlled by varying the flow ratio of the process gas. The relationship between the etching selection ratio and the flow rate ratio of the processing gas is as follows.
選擇比1.63：SF6 /CHF3 ＝12/60 sccm選擇比1.80：SF6 /CHF3 ＝10/60 sccm選擇比2.06：SF6 /CHF3 ＝8/60 sccmSelect ratio 1.63: SF 6 /CHF 3 =12/60 sccm select ratio 1.80: SF 6 /CHF 3 =10/60 sccm select ratio 2.06: SF 6 /CHF 3 =8/60 sccm
被認定依據第11圖及第12圖來調整蝕刻選擇比，透鏡形狀會變化，可以控制間隔D1。利用該結果，被認定：蝕刻選擇比為1.8以上的話，間隔D1變成500 nm以下，蝕刻選擇比為1.8以上的話，則與初期間隔d1大致相同程度，隨著蝕刻選擇比的增加，前述間隔D1會變小、與透鏡材料層31為SiN膜的情況不相同，即使蝕刻選擇比增加仍可以確保蝕刻量。如此，透鏡材料層31為SiO2 膜的情況，被推為即使蝕刻選擇比變大，堆積量相對於蝕刻量的比率仍不會過度變高，不會發生蝕刻停止。It is determined that the etching selection ratio is adjusted according to FIGS. 11 and 12, and the lens shape is changed to control the interval D1. When the etching selectivity is 1.8 or more, the interval D1 becomes 500 nm or less, and when the etching selectivity is 1.8 or more, the initial interval d1 is substantially the same, and the interval D1 increases as the etching selectivity ratio increases. It will become smaller, unlike the case where the lens material layer 31 is a SiN film, and the etching amount can be secured even if the etching selectivity ratio is increased. As described above, in the case where the lens material layer 31 is an SiO 2 film, even if the etching selectivity ratio is increased, the ratio of the deposition amount to the etching amount does not become excessively high, and etching stops do not occur.
因此，從第12圖的近似曲線，被認定：為了要形成具有與初期間隔d1相同程度或更窄的間隔D1之微透鏡3，最好是在蝕刻選擇比成為1.8以上的條件下，進行中間層32及微透鏡3的蝕刻，還預測：蝕刻選擇比變成2.2以上，就可以將間隔D1變成零。Therefore, from the approximate curve of Fig. 12, it is considered that in order to form the microlens 3 having the interval D1 which is the same degree or narrower than the initial interval d1, it is preferable to carry out the middle under the condition that the etching selectivity ratio is 1.8 or more. The etching of the layer 32 and the microlens 3 also predicts that the interval D1 becomes zero when the etching selectivity ratio becomes 2.2 or more.
針對與實施例2－1同樣的晶圓W，在1.63~2.06的範圍改變蝕刻選擇比，進行透鏡材料層31的蝕刻，針對透鏡材料層31的蝕刻速度、及蝕刻速度的面內均等性進行測定。前述蝕刻速度及蝕刻速度的面內均等性，係以前述晶圓面內的9個部位測定前述蝕刻速度，利用與實施例1－3同樣的手法來算出。此外，中間層32及透鏡材料層31的蝕刻條件如以下所述。With respect to the wafer W similar to that of Example 2-1, the etching selectivity was changed in the range of 1.63 to 2.06, and the etching of the lens material layer 31 was performed, and the etching rate of the lens material layer 31 and the in-plane uniformity of the etching rate were performed. Determination. The in-plane uniformity of the etching rate and the etching rate was measured by measuring the etching rate at nine locations in the wafer surface, and using the same method as in Example 1-3. Further, the etching conditions of the intermediate layer 32 and the lens material layer 31 are as follows.
〔中間層32的蝕刻條件〕在與實施例1－1相同的條件下進行[Etching conditions of the intermediate layer 32] were carried out under the same conditions as in Example 1-1.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：如下述蝕刻選擇比 ：如下述高頻電源的電力 ：400 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻2.8 μm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: Etching Selection Ratio as follows: Power of the following high-frequency power source: 400 W Processing pressure: 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 0 ° C Processing time: up to the lens The material layer 31 is etched until 2.8 μm, and the etching is stopped.
蝕刻選擇比係藉由改變處理氣體的流量比來進行控制。蝕刻選擇比與處理氣體的流量比的關係與實施例2－1相同。The etch selectivity ratio is controlled by varying the flow ratio of the process gas. The relationship between the etching selection ratio and the flow rate ratio of the processing gas was the same as in Example 2-1.
處理氣體的流量比與蝕刻選擇比的關係、蝕刻速度、蝕刻速度的面內均等性一併顯示在第13圖中。經由該結果，被確認：蝕刻選擇比為1.63~2.06的範圍，則蝕刻速度的面內均等性良好。The flow rate of the process gas is shown in Fig. 13 together with the relationship between the etching selectivity and the in-plane uniformity of the etching rate and the etching rate. From this result, it was confirmed that the etching selectivity was in the range of 1.63 to 2.06, and the in-plane uniformity of the etching rate was good.
針對實施例2－1的晶圓W，將蝕刻選擇比固定在1.6，改變高頻電力的供應量來進行蝕刻，針對所獲得的微透鏡3測定間隔D1，再測定該間隔D1的高頻電力依存性、及透鏡材料層31的蝕刻速度和蝕刻速度的面內均等性。關於前述蝕刻速度及蝕刻速度的面內均等性則是利用與實施例2－2同樣的手法來進行測定。此外，蝕刻條件如以下所述。With respect to the wafer W of Example 2-1, the etching selectivity was fixed at 1.6, the supply amount of the high-frequency power was changed, etching was performed, the interval D1 was measured for the obtained microlens 3, and the high-frequency power of the interval D1 was measured. Dependence, and the in-plane uniformity of the etching rate of the lens material layer 31 and the etching rate. The in-plane uniformity of the etching rate and the etching rate was measured by the same method as in Example 2-2. Further, the etching conditions are as follows.
〔中間層32的蝕刻條件〕在與實施例1－1相同條件下進行。[Etching conditions of the intermediate layer 32] were carried out under the same conditions as in Example 1-1.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：SF6 /CHF3 ＝12/60 sccm蝕刻選擇比 ：1.6高頻電源的電力 ：400 W、800 W處理壓力 ：2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻2.8 μm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: SF 6 /CHF 3 = 12/60 sccm Etching Selection Ratio: 1.6 Power of High Frequency Power Supply: 400 W, 800 W Processing Pressure: 2.65 Pa (20 mTorr) of the mounting table Setting temperature: 0 ° C processing time: until the lens material layer 31 is etched by 2.8 μm, the etching is stopped.
將該結果顯示在第14圖中。第14圖中，縱軸為間隔D1，橫軸為高頻電力的供應量。另外，電力供應量為400 W時的蝕刻速度為186.4 nm/min，蝕刻速度的面內均等性為±4.5%，電力供應量為800 W時的蝕刻速度為339.6 nm/min，蝕刻速度的面內均等性為±3.9%。因此，被認定：令高頻電力的供應量變化，藉此可以調整透鏡形狀也可以調整間隔D1、可以調整蝕刻速度和刻速度的面內均等性、蝕刻選擇比為1.6的情況，間隔D1則是電力供應量為800 W時比電力供應量為400 W時還要更窄，也提高前述刻速度的面內均等性。This result is shown in Fig. 14. In Fig. 14, the vertical axis represents the interval D1, and the horizontal axis represents the supply amount of high-frequency power. In addition, the etching rate at the power supply of 400 W is 186.4 nm/min, the in-plane uniformity of the etching rate is ±4.5%, and the etching rate at the power supply of 800 W is 339.6 nm/min. The internal consistency is ±3.9%. Therefore, it is determined that the supply amount of the high-frequency power is changed, whereby the lens shape can be adjusted, the interval D1 can be adjusted, the in-plane uniformity of the etching rate and the engraving speed can be adjusted, and the etching selectivity ratio can be adjusted to 1.6, and the interval D1 can be adjusted. When the power supply is 800 W, it is narrower than when the power supply is 400 W, and the in-plane uniformity of the aforementioned engraving speed is also improved.
針對實施例2－1的晶圓W，將蝕刻選擇比固定在1.6，改變處理壓力的值來進行蝕刻，針對所獲得的微透鏡3測定間隔D1，再測定該間隔D1的處理壓力依存性、及透鏡材料層31的蝕刻速度和蝕刻速度的面內均等性。關於前述蝕刻速度及蝕刻速度的面內均等性則是利用與實施例2－2同樣的手法來進行測定。此外，蝕刻條件如以下所述。With respect to the wafer W of Example 2-1, the etching selectivity was fixed at 1.6, the value of the processing pressure was changed, etching was performed, the interval D1 was measured for the obtained microlens 3, and the processing pressure dependency of the interval D1 was measured. And the in-plane uniformity of the etching rate and the etching rate of the lens material layer 31. The in-plane uniformity of the etching rate and the etching rate was measured by the same method as in Example 2-2. Further, the etching conditions are as follows.
〔中間層32的蝕刻條件〕在與實施例1－1相同條件下進行。[Etching conditions of the intermediate layer 32] were carried out under the same conditions as in Example 1-1.
〔透鏡材料層31的蝕刻條件〕處理氣體 ：SF6 /CHF3 ＝10 sccm/60 sccm蝕刻選擇比 ：1.6高頻電源的電力 ：800 W處理壓力 ：1.94 Pa(15 mTorr)、2.65 Pa(20 mTorr)載置台的設定溫度 ：0℃處理時間 ：直到透鏡材料層31蝕刻2.8 μm為止進行，停止蝕刻[Etching Conditions of Lens Material Layer 31] Process Gas: SF 6 /CHF 3 = 10 sccm / 60 sccm Etching Selection Ratio: 1.6 Power of High Frequency Power Supply: 800 W Processing Pressure: 1.94 Pa (15 mTorr), 2.65 Pa (20 mTorr) Setting temperature of the mounting table: 0° C. Processing time: Until the lens material layer 31 is etched by 2.8 μm, the etching is stopped.
將該結果顯示在第15圖中。第15圖中，縱軸為間隔D1，橫軸為處理壓力。另外，處理壓力為1.94 Pa時的蝕刻速度為339.6 nm/min，刻速度的面內均等性為±3.9%，處理壓力為2.65 Pa時的蝕刻速度為323.0 nm/min，刻速度的面內均等性為±4.3%。因此，被認定：令處理壓力變化，藉此可以調整透鏡形狀而可以調整間隔D1的大小、可以調整蝕刻速度和刻速度的面內均等性、蝕刻選擇比為1.6的情況，處理壓力為1.94 Pa時間隔D1變窄，也提高前述刻速度的面內均等性。This result is shown in Fig. 15. In Fig. 15, the vertical axis represents the interval D1, and the horizontal axis represents the processing pressure. In addition, the etching rate at the processing pressure of 1.94 Pa was 339.6 nm/min, the in-plane uniformity of the engraving speed was ±3.9%, and the etching rate at the processing pressure of 2.65 Pa was 323.0 nm/min, and the in-plane uniformity of the engraving speed was equal. The sex is ±4.3%. Therefore, it is determined that the processing pressure is changed, whereby the lens shape can be adjusted, the size of the interval D1 can be adjusted, the in-plane uniformity of the etching rate and the engraving speed can be adjusted, and the etching selectivity ratio can be adjusted to 1.6, and the processing pressure is 1.94 Pa. The time interval D1 is narrowed, and the in-plane uniformity of the aforementioned engraving speed is also improved.
如此，透鏡形狀或前述面內均等性，依賴高頻電力的供應量或處理壓力，係如前述，隨著高頻電力的供應量或處理壓力的增加，F自由基的量增加，結果推認為因有助於蝕刻之F的量與有助於堆積之C等的量之比例變化，這點反映到透鏡形狀或前述刻速度的面內均等性之故。另外，透鏡材料層31為SiN膜的情況，有關間隔D1與高頻電力的供應量或處理壓力的關係則未進行實驗，不過預測：會獲得與透鏡材料層31為SiO2 膜的情況同樣的結果。Thus, the lens shape or the in-plane uniformity depends on the supply amount of high-frequency power or the processing pressure. As described above, as the supply amount of high-frequency power or the processing pressure increases, the amount of F radicals increases, and as a result, it is estimated that This is reflected in the in-plane uniformity of the lens shape or the aforementioned engraving speed due to the change in the ratio of the amount of F which contributes to the etching to the amount of C which contributes to the deposition. Further, in the case where the lens material layer 31 is a SiN film, the relationship between the interval D1 and the supply amount of the high-frequency power or the processing pressure is not tested, but it is predicted that the lens material layer 31 is the same as the SiO 2 film. result.
以上，本發明的蝕刻處理只是以上述的電漿處理裝置來實施，也能夠以藉由其他的方式來令電漿產生的裝置來實施。進而，本發明不只能夠用於形成CCD固體攝像元件，還能夠用於形成MOS型固體攝像元件或液晶顯示元件所應用的微透鏡。進而，本發明的方法不只用於形成最表面的微透鏡，也有效用於形成層內透鏡；除了使用半導體晶圓之外，也可以使用玻璃基板來作為形成本發明的微透鏡的基板。As described above, the etching treatment of the present invention is carried out only by the above-described plasma processing apparatus, and can also be carried out by means of other means for generating plasma. Further, the present invention can be used not only for forming a CCD solid-state imaging device but also for forming a microlens to which a MOS type solid-state imaging element or a liquid crystal display element is applied. Further, the method of the present invention is not only used to form the outermost surface microlens, but is also effective for forming an in-layer lens; in addition to the use of a semiconductor wafer, a glass substrate can be used as a substrate for forming the microlens of the present invention.
21．．．感光部twenty one. . . Photosensitive unit
22．．．垂直暫存器twenty two. . . Vertical register
23．．．導電膜twenty three. . . Conductive film
24．．．遮光膜twenty four. . . Sunscreen
25．．．平坦化膜25. . . Planar film
26．．．濾色層26. . . Filter layer
3．．．微透鏡3. . . Microlens
31．．．透鏡材料層31. . . Lens material layer
32．．．中間層32. . . middle layer
33．．．遮罩膜33. . . Mask film
4．．．處理室4. . . Processing room
41．．．載置台41. . . Mounting table
42．．．靜電夾盤42. . . Electrostatic chuck
5．．．氣體供應室5. . . Gas supply room
50．．．流量調整手段50. . . Traffic adjustment means
52A．．．CF4 氣體源52A. . . CF 4 gas source
52B．．．C4 F8 氣體源52B. . . C 4 F 8 gas source
52C．．．SF6 氣體源52C. . . SF 6 gas source
52D．．．CHF3 氣體源52D. . . CHF 3 gas source
54．．．真空排氣手段54. . . Vacuum exhaust
54A．．．壓力調整手段54A. . . Pressure adjustment
61．．．雙極環形磁體61. . . Bipolar ring magnet
63．．．高頻電源部63. . . High frequency power supply unit
第1圖為表示具備有本發明的微透鏡之CCD固體攝像元件的一個例子之剖面圖。Fig. 1 is a cross-sectional view showing an example of a CCD solid-state image sensor including the microlens of the present invention.
第2圖為表示前述微透鏡的形成方法之過程圖。Fig. 2 is a process diagram showing a method of forming the aforementioned microlens.
第3圖為表示前述微透鏡的形成方法之過程圖。Fig. 3 is a process diagram showing a method of forming the aforementioned microlens.
第4圖為表示用來實施形成前述微透鏡的蝕刻過程之磁控管RIE電漿蝕刻裝置的一個例子之剖面圖。Fig. 4 is a cross-sectional view showing an example of a magnetron RIE plasma etching apparatus for performing an etching process for forming the aforementioned microlens.
第5圖為表示具備有本發明的微透鏡之CCD固體攝像元件的其他例子之剖面圖。Fig. 5 is a cross-sectional view showing another example of a CCD solid-state image sensor including the microlens of the present invention.
第6圖為表示呈現實施例1－1的結果之微透鏡的平面形狀及間隔D1之特性圖。Fig. 6 is a characteristic diagram showing the planar shape and the interval D1 of the microlens showing the results of Example 1-1.
第7圖為用來說明蝕刻深度之剖面圖。Fig. 7 is a cross-sectional view for explaining the etching depth.
第8圖為表示呈現實施例1－2的結果之微透鏡的平面形狀及剖面形狀與間隔D1與蝕刻深度之特性圖。Fig. 8 is a characteristic diagram showing the planar shape and cross-sectional shape of the microlens showing the results of Example 1-2, and the interval D1 and the etching depth.
第9圖為表示呈現實施例1－2的結果之間隔D1與蝕刻選擇比的關係之特性圖。Fig. 9 is a characteristic diagram showing the relationship between the interval D1 of the result of the embodiment 1-2 and the etching selection ratio.
第10圖為表示呈現實施例1－3的結果之蝕刻選擇比與蝕刻速度與刻速度的面內均等性之特性圖。Fig. 10 is a characteristic diagram showing the in-plane uniformity of the etching selectivity ratio and the etching rate and the engraving speed of the results of the examples 1-3.
第11圖為表示呈現實施例2－1的結果之微透鏡的平面形狀及剖面形狀與間隔D1之特性圖。Fig. 11 is a characteristic diagram showing the planar shape, the cross-sectional shape, and the interval D1 of the microlens showing the results of Example 2-1.
第12圖為表示呈現實施例2－1的結果之間隔D1與蝕刻選擇比的關係之特性圖。Fig. 12 is a characteristic diagram showing the relationship between the interval D1 of the result of the embodiment 2-1 and the etching selection ratio.
第13圖為表示呈現實施例2－2的結果之蝕刻選擇比與蝕刻速度與刻速度的面內均等性之特性圖。Fig. 13 is a characteristic diagram showing the in-plane uniformity of the etching selectivity ratio and the etching rate and the engraving speed of the results of the embodiment 2-2.
第14圖為表示呈現實施例2－3的結果之間隔D1與高頻電力的供應量的關係之特性圖。Fig. 14 is a characteristic diagram showing the relationship between the interval D1 of the result of the embodiment 2-3 and the supply amount of the high-frequency power.
第15圖為表示呈現實施例2－4的結果之間隔D1與處理壓力的關係之特性圖。Fig. 15 is a characteristic diagram showing the relationship between the interval D1 showing the result of Example 2-4 and the processing pressure.
第16圖為表示習知的微透鏡的形成方法之平面圖。Fig. 16 is a plan view showing a conventional method of forming a microlens.
第17圖為表示習知的微透鏡的形成方法之剖面圖。Fig. 17 is a cross-sectional view showing a conventional method of forming a microlens.
3．．．微透鏡3. . . Microlens
26．．．濾色層26. . . Filter layer
31．．．透鏡材料層31. . . Lens material layer
32．．．中間層32. . . middle layer
33．．．遮罩膜33. . . Mask film
Claims (7)
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| JP2006178502A JP4826362B2 (en) | 2006-06-28 | 2006-06-28 | Method for forming a microlens |
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| TW200810099A TW200810099A (en) | 2008-02-16 |
| TWI466272B true TWI466272B (en) | 2014-12-21 |
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| TW096123363A TWI466272B (en) | 2006-06-28 | 2007-06-27 | A microlens forming method and a semiconductor device |
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| JP (1) | JP4826362B2 (en) |
| KR (2) | KR20080002638A (en) |
| CN (1) | CN101097846A (en) |
| TW (1) | TWI466272B (en) |
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| TWI747513B (en) * | 2020-08-11 | 2021-11-21 | 奇景光電股份有限公司 | Optical element and wafer level optical module |
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| JP2008159748A (en) * | 2006-12-22 | 2008-07-10 | Toppan Printing Co Ltd | Method for manufacturing solid-state image sensing device and solid-state image sensing device |
| CN101949518A (en) * | 2010-09-29 | 2011-01-19 | 上海铭源光源发展有限公司 | Manufacturing method for fly lens structure |
| JP5372102B2 (en) | 2011-02-09 | 2013-12-18 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
| JP2013077740A (en) | 2011-09-30 | 2013-04-25 | Sony Corp | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus |
| WO2013181140A2 (en) * | 2012-05-30 | 2013-12-05 | Mattson Technology, Inc. | Method for forming microlenses |
| TWI669809B (en) | 2012-05-30 | 2019-08-21 | 日商新力股份有限公司 | Imaging element, imaging device, manufacturing device and method |
| JP6099345B2 (en) * | 2012-09-27 | 2017-03-22 | シャープ株式会社 | LENS AND ITS MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, ELECTRONIC INFORMATION DEVICE |
| US20140183334A1 (en) * | 2013-01-03 | 2014-07-03 | Visera Technologies Company Limited | Image sensor for light field device and manufacturing method thereof |
| JP2015065268A (en) | 2013-09-25 | 2015-04-09 | ソニー株式会社 | Lens array and manufacturing method thereof, solid state image sensor and electronic apparatus |
| US10665627B2 (en) | 2017-11-15 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens |
| JPWO2020122032A1 (en) * | 2018-12-13 | 2021-10-28 | 凸版印刷株式会社 | Manufacturing method of solid-state image sensor and solid-state image sensor |
| CN110107841B (en) * | 2019-03-13 | 2023-11-10 | 赣州市众恒光电科技有限公司 | Protection industrial and mining lamp with changeable light emitting angle |
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| US20050061772A1 (en) * | 2003-09-24 | 2005-03-24 | Tokyo Electron Limited | Method for forming micro lenses |
| TW200614495A (en) * | 2004-06-23 | 2006-05-01 | Toppan Printing Co Ltd | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device |
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| JP2002110952A (en) * | 2000-10-02 | 2002-04-12 | Sony Corp | Method for forming on-chip microlens and method for manufacturing solid-state imaging element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050061772A1 (en) * | 2003-09-24 | 2005-03-24 | Tokyo Electron Limited | Method for forming micro lenses |
| TW200614495A (en) * | 2004-06-23 | 2006-05-01 | Toppan Printing Co Ltd | Solid state imaging device, manufacturing method of the same, and substrate for solid state imaging device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI747513B (en) * | 2020-08-11 | 2021-11-21 | 奇景光電股份有限公司 | Optical element and wafer level optical module |
| US11808959B2 (en) | 2020-08-11 | 2023-11-07 | Himax Technologies Limited | Optical element and wafer level optical module |
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| KR20080002638A (en) | 2008-01-04 |
| TW200810099A (en) | 2008-02-16 |
| KR20090014134A (en) | 2009-02-06 |
| JP2008009079A (en) | 2008-01-17 |
| CN101097846A (en) | 2008-01-02 |
| JP4826362B2 (en) | 2011-11-30 |
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