TWI465801B - Active device array substrate and display panel - Google Patents
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Description
本發明是有關於一種主動元件陣列基板與顯示面板，且特別是有關於一種可提高對位機台對於定位標記之辨識度的主動元件陣列基板與應用此主動元件陣列基板的顯示面板。The present invention relates to an active device array substrate and a display panel, and more particularly to an active device array substrate capable of improving the recognition of a positioning mark by a positioning machine and a display panel using the active device array substrate.
傳統的液晶顯示面板是由彩色濾光基板(Color Filter Substrate)、薄膜電晶體陣列基板(TFT Array Substrate)以及配置於此兩基板間的液晶層(Liquid Crystal Layer)所構成。現今更提出了將彩色濾光膜直接整合於薄膜電晶體陣列基板上(Color Filter on Array,COA)或是將黑矩陣製作於薄膜電晶體陣列基板上(Black matrix on Array,BOA)的技術，係將COA基板或BOA基板與另一對向基板組立，並於兩基板間填入液晶分子，以形成液晶顯示面板。A conventional liquid crystal display panel is composed of a color filter substrate, a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer disposed between the two substrates. Nowadays, a technique of directly integrating a color filter film on a thin film transistor array substrate (COA) or a black matrix on a thin film transistor array substrate (BOA) is proposed. A COA substrate or a BOA substrate is assembled with another opposite substrate, and liquid crystal molecules are filled between the two substrates to form a liquid crystal display panel.
然而，習知在進行COA基板或BOA基板的製程或是進行液晶顯示面板的組立時，由於定位標記是形成在COA基板或BOA基板上，且COA基板或BOA基板上的黑矩陣會覆蓋定位標記，如此往往會影響到對位機台對定位標記的辨識度。尤其，為了提高液晶顯示面板的顯示對比，通常需採用高光學密度(Optical Density,OD)的材料來製作黑矩陣。然而，具有高OD值的材料因其優異的遮光效果，也將使得定位標記不易被對位機台所辨別，而影響對位的 精準度。However, it is known that when the process of the COA substrate or the BOA substrate is performed or the liquid crystal display panel is assembled, since the positioning mark is formed on the COA substrate or the BOA substrate, the black matrix on the COA substrate or the BOA substrate covers the positioning mark. This often affects the recognition of the positioning marks by the alignment machine. In particular, in order to improve the display contrast of a liquid crystal display panel, it is generally required to use a material having a high optical density (OD) to form a black matrix. However, materials with high OD values will also make the positioning marks difficult to be distinguished by the alignment machine due to their excellent shading effect, which will affect the alignment. Precision.
此外，習知存在採用單層的金屬層來製作的定位標記，以利用金屬定位標記的斜面反光來產生易於辨識的標記圖案。然而，此種利用單層金屬製作的定位標記容易因為製程上的缺陷或是製程限制，即能夠形成斜面的金屬層厚度有限，而使得標記圖案不完整或是尺寸不夠大，因而影響對位機台對標記圖案的辨識度。In addition, it is known to have a positioning mark made of a single layer of metal layer to reflect the beveled surface of the metal positioning mark to produce an easily recognizable marking pattern. However, such a positioning mark made of a single-layer metal is easily limited by process defects or process limitations, that is, the thickness of the metal layer capable of forming a bevel is limited, and the marking pattern is incomplete or the size is not large enough, thereby affecting the positioner. The recognition of the marking pattern by the table.
本發明提供一種主動元件陣列基板，可同時滿足顯示面板的高顯示對比需求與對位機台對定位標記的高辨識度需求。The invention provides an active device array substrate, which can simultaneously meet the high display contrast requirement of the display panel and the high recognition requirement of the alignment machine for the positioning mark.
本發明提供一種顯示面板，應用前述的主動元件陣列基板，而可提供優異的顯示對比，並可讓對位機台對此顯示面板上的定位標記具有良好的辨識度，進而提高製程良率。The invention provides a display panel, which can provide excellent display contrast by using the above-mentioned active device array substrate, and can make the alignment machine have good recognition degree for the positioning mark on the display panel, thereby improving the process yield.
在此提出一種主動元件陣列基板，其包括一基板、多個主動元件以及至少一定位標記。基板具有多個畫素區，主動元件對應於畫素區配置。定位標記配置於基板上，並且包括至少一第一金屬層以及一第二金屬層，其中第一金屬層的側壁包括一第一斜面，第二金屬層配置於第一金屬層上，並暴露出第一斜面，且第二金屬層的側壁包括一第二斜面。An active device array substrate is provided herein, including a substrate, a plurality of active components, and at least one positioning mark. The substrate has a plurality of pixel regions, and the active elements correspond to the pixel region configuration. The positioning mark is disposed on the substrate, and includes at least one first metal layer and a second metal layer, wherein the sidewall of the first metal layer includes a first slope, and the second metal layer is disposed on the first metal layer and exposed The first sloped surface, and the sidewall of the second metal layer includes a second slope.
在一實施例中，前述的定位標記包括一中央區塊以及 圍繞中央區塊配置的多個外圍區塊。In an embodiment, the aforementioned positioning mark includes a central block and A plurality of peripheral blocks arranged around the central block.
在一實施例中，前述的第一金屬層與第二金屬層具有相同的形狀，而第一斜面與第二斜面相連且共平面。In an embodiment, the first metal layer and the second metal layer have the same shape, and the first slope is connected to the second slope and is coplanar.
在一實施例中，前述的第一金屬層具有一頂面，而第二金屬層配置於頂面上，並暴露出頂面的外圍區域。In one embodiment, the aforementioned first metal layer has a top surface, and the second metal layer is disposed on the top surface and exposes a peripheral region of the top surface.
在此更提出一種顯示面板，其包括前述之主動元件陣列基板、一對向基板以及一顯示介質層，其中顯示介質層配置於主動元件陣列基板與對向基板之間。There is further provided a display panel comprising the active device array substrate, a pair of substrates and a display medium layer, wherein the display medium layer is disposed between the active device array substrate and the opposite substrate.
基於上述，前述提出的主動元件陣列基板係對黑矩陣的光穿透率與光學密度進行限定，以使對位機台對定位標記具有良好的辨識度，並可同時維持良好的顯示對比。另一方面，定位標記的結構可採用至少兩層的金屬層來構成，以增加金屬層的總厚度，使作為標記圖案的金屬斜面相對變大，提高對位機台對定位標記的辨識度。Based on the above, the active device array substrate proposed above defines the light transmittance and optical density of the black matrix, so that the alignment machine has good recognition of the positioning mark, and can maintain good display contrast at the same time. On the other hand, the structure of the positioning mark can be formed by using at least two layers of metal layers to increase the total thickness of the metal layer, so that the metal bevel as the marking pattern is relatively enlarged, and the recognition of the positioning mark by the positioning machine is improved.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
本發明提出一種主動元件陣列基板，係對黑矩陣的光穿透率與光學密度進行限定，其中對於對位機台所使用的長波長的偵測光源，黑矩陣可具有較高的光穿透率，以使對位機台對定位標記具有良好的辨識度。同時，對於顯示面板用以顯示畫面的具有較短波長的顯示光源，黑矩陣仍然具有高光學密度，以維持良好的顯示對比。藉由此種特 性的黑矩陣可同時滿足顯示面板的高顯示對比需求與對位機台對定位標記的高辨識度需求。另一方面，本發明還可以選擇對定位標記的結構進行改良，改為採用至少兩層的金屬層來構成定位標記。由於金屬層的總厚度增加，因此能夠作為標記圖案的金屬斜面也相對變大，有助於提高對位機台對定位標記的辨識度。The invention provides an active device array substrate, which defines the light transmittance and the optical density of the black matrix, wherein the black matrix can have a higher light transmittance for the long wavelength detection light source used by the alignment machine. In order to make the alignment machine have a good recognition of the positioning mark. At the same time, for a display light source with a shorter wavelength for the display panel to display a picture, the black matrix still has a high optical density to maintain good display contrast. By this special The black matrix can meet the high display contrast requirement of the display panel and the high recognition requirement of the alignment machine for the positioning mark. On the other hand, the present invention can also optionally improve the structure of the positioning mark, and instead use at least two layers of metal layers to form the positioning mark. Since the total thickness of the metal layer is increased, the metal slope which can be used as the marking pattern is also relatively large, which contributes to the improvement of the identification of the positioning mark by the positioning machine.
此處所指的光學密度為材料遮光能力的表徵，是通過材料的入射光強度與透射光強度比值的對數，等同於光穿透率倒數的對數，即光學密度OD=log10(透射光強度/入射光強度)或光學密度OD=log10(1/光穿透率)。當OD值等於0的時候，材料不吸收光線，光穿透率為100%。當OD值等於無窮大的時候，材料會吸收全部光線，光穿透率為0。The optical density referred to herein is a characteristic of the light-shielding ability of the material, which is the logarithm of the ratio of the incident light intensity to the transmitted light intensity of the material, which is equivalent to the logarithm of the reciprocal of the light transmittance, that is, the optical density OD=log10 (transmitted light intensity/incident) Light intensity) or optical density OD = log 10 (1/light transmittance). When the OD value is equal to 0, the material does not absorb light and the light transmittance is 100%. When the OD value is equal to infinity, the material absorbs all of the light and the light transmittance is zero.
以下藉由不同實施例分別說明採用特定黑矩陣以及改良之定位標記結構來提高對位機台對定位標記之辨識度的詳細方法。The detailed method of using the specific black matrix and the improved positioning mark structure to improve the recognition degree of the positioning mark by the positioning machine is respectively described by different embodiments.
圖1為依照本發明之一實施例的一種主動元件陣列基板的示意圖。如圖1所示，主動元件陣列基板100可以是COA基板或BOA基板，其中基板102上具有黑矩陣110，用以在基板102上劃分出多個陣列配置的畫素區104。多個畫素結構120分別對應於畫素區104配置，其中每個畫素結構120可包括主動元件以及其他可能存在的例如畫素電極、彩色濾光膜或儲存電容等元件。此外，基板102表面形成有一或多個定位標記130，而黑矩陣110覆蓋於定 位標記130上，其中一個製造方法就是黑矩陣110全膜塗佈覆蓋於定位標記130上，且曝光顯影後，不是覆蓋在定位標記130上方的黑矩陣110會被移除。或者是，依續覆蓋黑矩陣及光阻層於定位標記130上，且曝光顯影光阻層及蝕刻部份黑矩陣並移除光阻層後，不是覆蓋在定位標記130上方的黑矩陣110會被移除。此定位標記130可在組立或是其他製程中，供對位機台(未繪示)對基板102進行定位。1 is a schematic diagram of an active device array substrate in accordance with an embodiment of the present invention. As shown in FIG. 1 , the active device array substrate 100 may be a COA substrate or a BOA substrate, wherein the substrate 102 has a black matrix 110 thereon for dividing a plurality of arrayed pixel regions 104 on the substrate 102 . The plurality of pixel structures 120 correspond to the pixel region 104 configuration, respectively, wherein each of the pixel structures 120 may include active elements and other components such as pixel electrodes, color filter films, or storage capacitors that may be present. In addition, one or more positioning marks 130 are formed on the surface of the substrate 102, and the black matrix 110 is covered by On the bit mark 130, one of the manufacturing methods is that the black matrix 110 is coated on the positioning mark 130 by full film coating, and after exposure and development, the black matrix 110 not covering the positioning mark 130 is removed. Alternatively, after the black matrix and the photoresist layer are overlaid on the alignment mark 130, and the developed photoresist layer is exposed and the black matrix is etched and the photoresist layer is removed, the black matrix 110 not covering the alignment mark 130 is not Was removed. The positioning mark 130 can be positioned in the assembly or other process for the positioning machine (not shown) to position the substrate 102.
在此，主動元件120例如是薄膜電晶體，而定位標記130可以是由主動元件陣列基板100中的任何一或多層金屬所構成，即，定位標記130可與基板102上的其他元件同步製作。當然，本實施例的定位標記130也可以是與基板102上的其他元件分開製作，即藉由額外的步驟而被形成在基板102上。Here, the active component 120 is, for example, a thin film transistor, and the alignment mark 130 may be formed of any one or more layers of metal in the active device array substrate 100, that is, the alignment mark 130 may be fabricated in synchronization with other components on the substrate 102. Of course, the positioning mark 130 of the present embodiment may also be fabricated separately from other components on the substrate 102, that is, formed on the substrate 102 by an additional step.
為了使主動元件陣列基板100可同時滿足顯示面板的高顯示對比需求與後續製程中對位機台對定位標記的高辨識度需求，本實施例對黑矩陣110的材料有如下的要求。首先，針對後續製程中對位機台對定位標記的高辨識度需求，假設對位機台使用長波長為λ1的偵測光源L1，則黑矩陣對於波長λ1的光穿透率需大於15%，以使足量的偵測光源L1可順利通過黑矩陣110，如此對位機台對定位標記可具有良好的辨識度。在此，長波長λ1的範圍例如是800 nm≦λ1<2500 nm，更具體為800 nm≦λ1≦1500 nm，而以現有較常見的對位機台而言，850 nm≦λ1≦1000nm。In order to enable the active device array substrate 100 to meet the high display contrast requirement of the display panel and the high recognition requirement of the alignment device for the positioning mark in the subsequent process, the present embodiment has the following requirements on the material of the black matrix 110. Firstly, for the high recognition requirement of the alignment mark on the positioning machine in the subsequent process, if the alignment machine uses the detection light source L1 with a long wavelength of λ1, the light transmittance of the black matrix for the wavelength λ1 needs to be greater than 15%. So that a sufficient amount of detection light source L1 can smoothly pass through the black matrix 110, so that the alignment machine can have good recognition of the positioning mark. Here, the range of the long wavelength λ1 is, for example, 800 nm ≦ λ1 < 2500 nm, more specifically 800 nm ≦ λ1 ≦ 1500 nm, and 850 nm ≦ λ1 ≦ 1000 nm, which is the more common alignment machine.
再者，針對顯示面板的高顯示對比需求，假設顯示面板用以顯示畫面的顯示光源L2的波長為λ2，則黑矩陣對於波長λ2的光學密度需大於2.5，以有效遮擋不必要的背光，維持良好的顯示對比。在此，顯示光源L2的波長λ2的範圍例如是380 nm≦λ2<780 nm。在另一實施例中，更可特別針對較長波段的顯示光源，例如符合500 nm≦λ2<600 nm範圍的顯示光源，來設定黑矩陣的光學密度。Furthermore, for the high display contrast requirement of the display panel, assuming that the wavelength of the display light source L2 used by the display panel to display the screen is λ2, the optical density of the black matrix for the wavelength λ2 needs to be greater than 2.5 to effectively block unnecessary backlights and maintain Good display contrast. Here, the range of the wavelength λ2 of the display light source L2 is, for example, 380 nm ≦ λ2 < 780 nm. In another embodiment, the optical density of the black matrix can be set more specifically for a longer wavelength display source, such as a display source that meets the range of 500 nm ≦ λ2 < 600 nm.
當然，前述黑矩陣對於波長λ1的光穿透率或是對於波長λ2的光學密度皆是可以依實際需求調整的數值。例如，當顯示面板的高顯示對比需求較強烈時，可以提高黑矩陣對於波長λ2的光學密度為大於3.5或更高的數值。Of course, the black matrix has a value that can be adjusted according to actual needs for the light transmittance of the wavelength λ1 or the optical density of the wavelength λ2. For example, when the high display contrast requirement of the display panel is strong, the optical density of the black matrix for the wavelength λ2 can be increased to a value greater than 3.5 or higher.
圖2為依照本發明之一實施例的一種黑矩陣材料對於各波段之光穿透率的曲線圖。如圖2所示，此種黑矩陣材料在800 nm以上的長波段範圍內具有高穿透率，使得對位機台的偵測光源能夠清楚辨識位於黑矩陣下的定位標記。另外，此種黑矩陣材料在顯示光源的波段內仍然維持低穿透率(高光學密度)，以保有良好的顯示對比。2 is a graph of light transmittance of a black matrix material for each band in accordance with an embodiment of the present invention. As shown in FIG. 2, the black matrix material has a high transmittance in a long wavelength range of 800 nm or more, so that the detecting light source of the alignment machine can clearly identify the positioning mark located under the black matrix. In addition, such a black matrix material maintains a low transmittance (high optical density) in the wavelength band of the display source to maintain good display contrast.
本實施例提出多種可以達到前述要求的黑矩陣，其材質具有多種組成，主要成分包括金屬氧化物(如氧化銀、氧化錫等)或有機顏料(如紅色顏料、藍色顏料、黃色顏料)或兩者之混合物、可能存在的碳黑(Carbon black)、由丙二醇甲醚醋酸酯+乙酸丁基二甘醇酯+乙酸-3-甲氧基丁酯或是丙二醇甲醚醋酸酯+乙酸-3-甲氧基丁酯所形成的溶劑，以及其餘可能存在的添加物，如壓克力樹脂(聚丙烯酸)、光 起始劑、交聯劑、耦合劑等等。This embodiment proposes a plurality of black matrices which can meet the foregoing requirements, and the materials thereof have various compositions, and the main components include metal oxides (such as silver oxide, tin oxide, etc.) or organic pigments (such as red pigments, blue pigments, yellow pigments) or a mixture of the two, carbon black (Carbon black), propylene glycol methyl ether acetate + butyl diglycol acetate + 3-methoxybutyl acetate or propylene glycol methyl ether acetate + acetic acid-3 - Solvent formed by methoxybutyl ester, and other additives that may be present, such as acrylic resin (polyacrylic acid), light Starter, crosslinker, coupling agent, and the like.
下表便揭示了兩種黑矩陣可能的組成成分(wt%)：
藉由前述特性的黑矩陣可同時滿足顯示面板的高顯示對比需求與對位機台對定位標記的高辨識度需求。The black matrix with the aforementioned characteristics can simultaneously satisfy the high display contrast requirement of the display panel and the high recognition requirement of the alignment machine for the positioning mark.
然而，除了對黑矩陣的特性進行設計之外，本發明還可對定位標記的結構進行改良，以提高對位機台對定位標記的辨識度。具體作法是採用至少兩層的金屬層來構成定 位標記。由於金屬層的總厚度增加，因此能夠作為標記圖案的金屬斜面也相對變大，有助於提高對位機台對定位標記的辨識度。However, in addition to designing the characteristics of the black matrix, the present invention can also improve the structure of the positioning mark to improve the recognition of the positioning mark by the positioning machine. The specific method is to use at least two layers of metal layers to form Bit mark. Since the total thickness of the metal layer is increased, the metal slope which can be used as the marking pattern is also relatively large, which contributes to the improvement of the identification of the positioning mark by the positioning machine.
圖3A與3B分別繪示依據本發明之一實施例的一種定位標記的上視圖與側視圖。如圖3A與3B所示，定位標記300配置於基板370上，係由一第一金屬層310以及一第二金屬層320所構成。若定位標記300是與基板370上的主動元件(如薄膜電晶體)或其他元件同步製作，則此第一金屬層310以及第二金屬層320例如分別是用以形成薄膜電晶體的閘極金屬層以及源極與汲極金屬層。當然，此定位標記300也可以是與基板370上的其他元件分開製作，即藉由額外的步驟而被形成在基板370上。3A and 3B are respectively a top view and a side view of a positioning mark in accordance with an embodiment of the present invention. As shown in FIGS. 3A and 3B, the positioning mark 300 is disposed on the substrate 370 and is composed of a first metal layer 310 and a second metal layer 320. If the alignment mark 300 is formed in synchronization with an active device (such as a thin film transistor) or other components on the substrate 370, the first metal layer 310 and the second metal layer 320 are, for example, gate metals for forming a thin film transistor, respectively. Layer and source and drain metal layers. Of course, the alignment mark 300 can also be fabricated separately from other components on the substrate 370, that is, formed on the substrate 370 by an additional step.
請再參考圖3A與3B，第一金屬層310的側壁包括一第一斜面312，而第二金屬層320配置於第一金屬層310上，並暴露出第一斜面312，且第二金屬層320的側壁包括一第二斜面322。第一斜面312與第二斜面322可以反射對位機台的偵測光源L1，以形成標記圖案。為有利於對位機台的對位與辨識，定位標記300可以被設計為各種形狀。例如，在圖3A中，定位標記300包括一中央區塊302以及圍繞中央區塊302配置的多個外圍區塊304。Referring to FIGS. 3A and 3B again, the sidewall of the first metal layer 310 includes a first slope 312, and the second metal layer 320 is disposed on the first metal layer 310 and exposes the first slope 312, and the second metal layer The sidewall of the 320 includes a second slope 322. The first inclined surface 312 and the second inclined surface 322 may reflect the detecting light source L1 of the alignment machine to form a marking pattern. To facilitate alignment and identification of the alignment machine, the positioning marks 300 can be designed in a variety of shapes. For example, in FIG. 3A, the alignment mark 300 includes a central block 302 and a plurality of peripheral blocks 304 disposed around the central block 302.
在本實施例中，第一金屬層310與第二金屬層320可以具有相同的圖案，且第一金屬層310的第一斜面312例如與第二金屬層320的第二斜面322相連且共平面。當然，本發明之定位標記的結構並不限於此。在圖4所繪示的另 一實施例中，第一金屬層310具有一頂面314，而第二金屬層320配置於頂面314上，並暴露出頂面314的外圍區域。In this embodiment, the first metal layer 310 and the second metal layer 320 may have the same pattern, and the first slope 312 of the first metal layer 310 is connected to the second slope 322 of the second metal layer 320, for example, and is coplanar. . Of course, the structure of the positioning mark of the present invention is not limited thereto. The other one shown in Figure 4 In one embodiment, the first metal layer 310 has a top surface 314 and the second metal layer 320 is disposed on the top surface 314 and exposes a peripheral region of the top surface 314.
前述實施例之圖3A、3B與圖4所繪示的定位標記結構可以單獨實施，或是可應用於圖1所示的主動元件陣列基板上，以搭配黑矩陣材料的選擇，來得到更佳的機台對位效果與顯示對比。The positioning mark structure shown in FIG. 3A, FIG. 3B and FIG. 4 of the foregoing embodiment may be implemented separately or may be applied to the active device array substrate shown in FIG. 1 to better match the selection of the black matrix material. The machine alignment effect is compared with the display.
此外，圖5更繪示應用前述多個實施例之主動元件陣列基板以及定位標記結構的顯示面板。如圖5所示，顯示面板500包括一主動元件陣列基板510、一對向基板520以及一顯示介質層530。此主動元件陣列基板510例如是一薄膜電晶體陣列基板，並且可以是COA基板或BOA基板，其採用前述多個實施例的技術內容，選用特定的黑矩陣材料、定位標記結構或是兩者的結合，以達到更佳的機台對位效果與顯示對比。此外，因應主動元件陣列基板510可能為COA基板或BOA基板，對向基板520可以具有共用電極或是彩色濾光片。顯示介質層530例如是液晶層，其配置於主動元件陣列基板510與對向基板520之間，以作為顯示光閥。In addition, FIG. 5 further illustrates a display panel to which the active device array substrate and the positioning mark structure of the foregoing various embodiments are applied. As shown in FIG. 5, the display panel 500 includes an active device array substrate 510, a pair of substrates 520, and a display medium layer 530. The active device array substrate 510 is, for example, a thin film transistor array substrate, and may be a COA substrate or a BOA substrate, which adopts the technical contents of the foregoing various embodiments, and selects a specific black matrix material, a positioning mark structure, or both. Combine to achieve better machine alignment and display contrast. In addition, the active substrate array substrate 510 may be a COA substrate or a BOA substrate, and the opposite substrate 520 may have a common electrode or a color filter. The display medium layer 530 is, for example, a liquid crystal layer disposed between the active device array substrate 510 and the opposite substrate 520 as a display light valve.
綜上所述，本發明提出了主動元件陣列基板與應用此主動元件陣列基板的顯示面板，其採用的黑矩陣對於對位機台所使用的長波長的偵測光源具有較高的光穿透率，以使對位機台對定位標記具有良好的辨識度。此外，黑矩陣對於顯示面板用以顯示畫面的具有較短波長的顯示光源仍 然保有高光學密度，因而可維持良好的顯示對比。此外，本發明還可對定位標記的結構進行改良，採用兩層以上的金屬層來構成定位標記，加大能夠作為標記圖案的金屬斜面，以提高對位機台對定位標記的辨識度。In summary, the present invention provides an active device array substrate and a display panel using the active device array substrate, wherein the black matrix has a high light transmittance for the long wavelength detection light source used by the alignment machine. In order to make the alignment machine have a good recognition of the positioning mark. In addition, the black matrix still has a display light source with a shorter wavelength for displaying a picture on the display panel. It maintains a high optical density and thus maintains a good display contrast. In addition, the present invention can also improve the structure of the positioning mark, and use two or more metal layers to form the positioning mark, and increase the metal inclined surface which can be used as the marking pattern to improve the recognition degree of the positioning mark by the positioning machine.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧主動元件陣列基板100‧‧‧Active component array substrate
102‧‧‧基板102‧‧‧Substrate
104‧‧‧畫素區104‧‧‧Photo area
110‧‧‧黑矩陣110‧‧‧Black matrix
120‧‧‧畫素結構120‧‧‧ pixel structure
130‧‧‧定位標記130‧‧‧ Positioning Mark
L1‧‧‧偵測光源L1‧‧‧Detecting light source
L2‧‧‧顯示光源L2‧‧‧ display light source
300‧‧‧定位標記300‧‧‧ Positioning Mark
302‧‧‧中央區塊302‧‧‧Central Block
304‧‧‧外圍區塊304‧‧‧ peripheral blocks
310‧‧‧第一金屬層310‧‧‧First metal layer
312‧‧‧第一斜面312‧‧‧ first slope
314‧‧‧第一金屬層的頂面314‧‧‧ top surface of the first metal layer
320‧‧‧第二金屬層320‧‧‧Second metal layer
322‧‧‧第二斜面322‧‧‧second slope
370‧‧‧基板370‧‧‧Substrate
500‧‧‧顯示面板500‧‧‧ display panel
510‧‧‧主動元件陣列基板510‧‧‧Active component array substrate
520‧‧‧對向基板520‧‧‧ opposite substrate
530‧‧‧顯示介質層530‧‧‧Display media layer
圖1為依照本發明之一實施例的一種主動元件陣列基板的示意圖。1 is a schematic diagram of an active device array substrate in accordance with an embodiment of the present invention.
圖2為依照本發明之一實施例的一種黑矩陣材料對於各波段之光穿透率的曲線圖。2 is a graph of light transmittance of a black matrix material for each band in accordance with an embodiment of the present invention.
圖3A與3B分別為依據本發明之一實施例的一種定位標記的上視圖與側視圖。3A and 3B are top and side views, respectively, of a positioning mark in accordance with an embodiment of the present invention.
圖4為依據本發明之另一實施例的一種定位標記的側視圖。4 is a side elevational view of a positioning mark in accordance with another embodiment of the present invention.
圖5繪示依據本發明之一實施例的一種顯示面板。FIG. 5 illustrates a display panel in accordance with an embodiment of the present invention.
100‧‧‧主動元件陣列基板100‧‧‧Active component array substrate
102‧‧‧基板102‧‧‧Substrate
104‧‧‧畫素區104‧‧‧Photo area
110‧‧‧黑矩陣110‧‧‧Black matrix
120‧‧‧畫素結構120‧‧‧ pixel structure
130‧‧‧定位標記130‧‧‧ Positioning Mark
L1‧‧‧偵測光源L1‧‧‧Detecting light source
L2‧‧‧顯示光源L2‧‧‧ display light source
Claims (11)
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| TW589471B (en) * | 2001-08-29 | 2004-06-01 | Seiko Epson Corp | Electrooptical device and electronic apparatus |
| TW200538792A (en) * | 2004-05-11 | 2005-12-01 | Seiko Epson Corp | Droplet ejecting apparatus, electro-optic device, electronic apparatus, and droplet ejecting method |
| US20080254704A1 (en) * | 2007-04-13 | 2008-10-16 | Nikon Corporation | Method and apparatus for manufacturing display devices |
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| TW589471B (en) * | 2001-08-29 | 2004-06-01 | Seiko Epson Corp | Electrooptical device and electronic apparatus |
| TW200538792A (en) * | 2004-05-11 | 2005-12-01 | Seiko Epson Corp | Droplet ejecting apparatus, electro-optic device, electronic apparatus, and droplet ejecting method |
| US20080254704A1 (en) * | 2007-04-13 | 2008-10-16 | Nikon Corporation | Method and apparatus for manufacturing display devices |
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