TWI464800B - Method for patterning surface of semiconductor substrate - Google Patents
Method for patterning surface of semiconductor substrate Download PDFInfo
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- TWI464800B TWI464800B TW100121073A TW100121073A TWI464800B TW I464800 B TWI464800 B TW I464800B TW 100121073 A TW100121073 A TW 100121073A TW 100121073 A TW100121073 A TW 100121073A TW I464800 B TWI464800 B TW I464800B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本揭露是有關於一種圖形化半導體基材表面之方法，特別是有關於一種應用於太陽能電池之表面粗糙化或於基材表面形成特定圖案的圖形化半導體基材表面方法。The present disclosure is directed to a method of patterning the surface of a semiconductor substrate, and more particularly to a method of surface patterning of a surface of a semiconductor device for roughening a surface of a solar cell or forming a specific pattern on the surface of the substrate.
近年來，由於環境污染的問題越來越嚴重，很多國家開始開發新的綠色能源來減少環境污染的問題。太陽能電池可將太陽的光能轉為電能，且這種轉換不會產生任何污染性的物質，因此太陽能電池逐漸受到重視。In recent years, as the problem of environmental pollution has become more and more serious, many countries have begun to develop new green energy sources to reduce environmental pollution. Solar cells can convert the sun's light energy into electrical energy, and this conversion does not produce any polluting substances, so solar cells are gradually gaining attention.
太陽能電池是利用半導體的光電效應直接吸收太陽光來發電。太陽能電池之發電原理是當太陽光照射在太陽能電池上時，太陽能電池會吸收太陽光能，而使太陽能電池之P型半導體與N型半導體分別產生電子與電洞，並使電子與電洞分離來形成電壓降，進而產生電流。Solar cells use the photoelectric effect of semiconductors to directly absorb sunlight to generate electricity. The principle of solar cell power generation is that when sunlight is irradiated on a solar cell, the solar cell absorbs solar energy, and the P-type semiconductor and the N-type semiconductor of the solar cell generate electrons and holes, respectively, and separate the electron from the hole. To form a voltage drop, which in turn generates a current.
在太陽能電池的製造過程中，通常會對太陽能電池的半導體基板進行表面粗糙化步驟。表面粗糙化步驟係利用化學蝕刻液來將太陽電池表面蝕刻成金字塔狀或多角錐狀的顆粒形狀。粗糙化的表面可使得太陽能電池在接收太陽光的過程中，減少因光線反射而無法吸收的太陽光，如此即可增加太陽能電池的發電效率。In the manufacturing process of a solar cell, a surface roughening step of a semiconductor substrate of a solar cell is usually performed. The surface roughening step utilizes a chemical etching solution to etch the surface of the solar cell into a pyramidal or polygonal pyramid shape. The roughened surface allows the solar cell to reduce the sunlight that cannot be absorbed by the light reflection during the process of receiving sunlight, thus increasing the power generation efficiency of the solar cell.
例如習知太陽能電池的粗糙表面為倒金字塔型態時，其表面粗糙化步驟係在半導體基板上沉積出遮罩，然後利用此遮罩來於半導體基板上蝕刻出具有倒金字塔結構的表面，接著再將遮罩移除。在習知的表面粗糙化步驟中，遮罩的沉積和移除皆需花費不少的成本與時間，如此將使得太陽能電池的製造成本與製造時間增加。For example, when the rough surface of the conventional solar cell is an inverted pyramid type, the surface roughening step is to deposit a mask on the semiconductor substrate, and then use the mask to etch a surface having an inverted pyramid structure on the semiconductor substrate, and then Then remove the mask. In the conventional surface roughening step, the deposition and removal of the mask takes a lot of cost and time, which will increase the manufacturing cost and manufacturing time of the solar cell.
本發明之一方面是在提供一種圖形化半導體基材表面之方法，其可減少傳統以曝光、顯影等製程於形成遮罩和移除時所需耗費的成本與時間，而應於太陽能電池時除可提昇製造效率外，亦可於電池表面製作出倒金字塔型態之結構。One aspect of the present invention is to provide a method of patterning the surface of a semiconductor substrate that reduces the cost and time required for conventional masking and removal processes, such as exposure, development, etc., while in the case of solar cells. In addition to improving manufacturing efficiency, an inverted pyramid pattern can also be fabricated on the surface of the battery.
根據本發明之一實施例，在此圖形化半導體基材表面之方法中，首先提供高分子膜(Polymer Film)。此高分子膜具有複數個第一貫穿孔。接著，形成保護層於高分子膜之表面上以及第一貫穿孔之複數個側壁上，以形成遮罩，其中第一貫穿孔被保護層填充而形成複數個第二貫穿孔，而上述之遮罩包含高分子膜以及具有第二貫穿孔之保護層。接著，進行固定步驟，以將遮罩固定於半導體基材之表面上。然後，進行蝕刻步驟，以利用遮罩來蝕刻並以乾式或溼式蝕刻半導體基材之表面，而在表面上形成複數個凹槽。According to an embodiment of the present invention, in the method of patterning the surface of a semiconductor substrate, a polymer film is first provided. The polymer film has a plurality of first through holes. Next, a protective layer is formed on the surface of the polymer film and a plurality of sidewalls of the first through hole to form a mask, wherein the first through hole is filled by the protective layer to form a plurality of second through holes, and the above-mentioned shielding The cover includes a polymer film and a protective layer having a second through hole. Next, a fixing step is performed to fix the mask on the surface of the semiconductor substrate. Then, an etching step is performed to etch and dry or wet etch the surface of the semiconductor substrate with a mask to form a plurality of grooves on the surface.
此外，上述固定步驟係利用黏膠來將該遮罩固定於該半導體基材之該表面上，並包含一遮罩移除步驟，其中此遮罩移除步驟係利用一黏膠清除劑來將該遮罩自半導體基材之該表面上移除。In addition, the fixing step utilizes an adhesive to fix the mask to the surface of the semiconductor substrate, and includes a mask removing step, wherein the mask removing step utilizes an adhesive scavenger to The mask is removed from the surface of the semiconductor substrate.
以及，固定步驟係利用靜電力來將遮罩固定於半導體基材之表面上。相應的，更包含一遮罩移除步驟，其中此遮罩移除步驟係利用一電荷中和裝置來將遮罩自半導體基材之表面上移除。And, the fixing step uses electrostatic force to fix the mask on the surface of the semiconductor substrate. Correspondingly, a mask removal step is further included, wherein the mask removal step utilizes a charge neutralizing device to remove the mask from the surface of the semiconductor substrate.
以及，保護層係以蒸鍍或濺渡之方式來形成。And, the protective layer is formed by evaporation or splashing.
以及，第一貫穿孔為矩形凹槽。每一第一貫穿孔之一邊長係大於凹槽彼此間之一間隙的寬度。And, the first through hole is a rectangular groove. One of the lengths of each of the first through holes is greater than the width of a gap between the grooves.
以及，蝕刻步驟係利用乾式蝕刻或溼式蝕刻來進行。And, the etching step is performed by dry etching or wet etching.
以及，提供該高分子膜之步驟包含提供一原始高分子膜，其中該原始高分子膜具有複數個第三貫穿孔，而該些第一貫穿孔為該些第三貫穿孔之一部分，將該原始高分子膜置放於該半導體基材之該表面上，以根據該半導體基材之面積來裁切出該高分子膜。由以上說明可知，本發明實施例之圖形化半導體基材表面之方法係先完成遮罩上的圖案，再將此遮罩固定於半導體基材上，以完成半導體基材的蝕刻。相較於習知的表面蝕刻步驟，本發明實施例之圖形化半導體基材表面之方法不需花費大量的成本與時間來沉積與移除遮罩，因此若利用本發明實施例之圖形化半導體基材表面之方法來進行太陽能電池的表粗糙化步驟，即可節省大量的製造時間與製造成本。And the step of providing the polymer film, comprising: providing a raw polymer film, wherein the original polymer film has a plurality of third through holes, and the first through holes are a part of the third through holes, The original polymer film is placed on the surface of the semiconductor substrate to cut the polymer film according to the area of the semiconductor substrate. It can be seen from the above description that the method for patterning the surface of the semiconductor substrate in the embodiment of the present invention completes the pattern on the mask, and then fixes the mask on the semiconductor substrate to complete the etching of the semiconductor substrate. Compared to the conventional surface etching step, the method of patterning the surface of the semiconductor substrate of the embodiment of the present invention does not require a large amount of cost and time to deposit and remove the mask, and thus the patterned semiconductor using the embodiment of the present invention The method of surface of the substrate to perform the surface roughening step of the solar cell can save a lot of manufacturing time and manufacturing cost.
請同時參照第1圖與第2a-2f圖，第1圖係繪示根據本發明實施例之圖形化半導體基材表面之方法100的流程示意圖，第2a-2f圖係繪示對應圖形化半導體基材表面之方法100之各步驟的半成品剖面結構示意圖。在圖形化半導體基材表面之方法100中，首先進行高分子膜提供步驟110，以提供高分子膜210，如第2a-2b圖所示，其中第2a圖係繪示高分子膜210的上視圖，第2b圖係繪示沿著第2a圖中之切線A-A’觀察所得之高分子膜210的剖面結構示意圖。Referring to FIG. 1 and FIG. 2a-2f, FIG. 1 is a schematic flow chart of a method 100 for patterning a surface of a semiconductor substrate according to an embodiment of the present invention, and FIGS. 2a-2f are diagrams showing corresponding graphic semiconductors. A schematic cross-sectional view of a semi-finished product of each step of the method 100 of the substrate surface. In the method 100 of patterning the surface of a semiconductor substrate, a polymer film providing step 110 is first performed to provide a polymer film 210, as shown in FIG. 2a-2b, wherein the second layer is shown on the polymer film 210. In the view, Fig. 2b is a schematic cross-sectional view showing the polymer film 210 observed along the tangential line A-A' in Fig. 2a.
高分子膜210之剖面結構示意圖，高分子膜210具有複數個貫穿孔212，貫穿孔212可為矩形之貫穿孔，但本發明之實施例並不受限於此。在本發明之其它實施例中，貫穿孔212可為圓形貫穿孔。A schematic cross-sectional view of the polymer film 210. The polymer film 210 has a plurality of through holes 212, and the through holes 212 may be rectangular through holes, but the embodiment of the present invention is not limited thereto. In other embodiments of the invention, the through hole 212 may be a circular through hole.
另外，貫穿孔212之間的間隙寬度係遠小於貫穿孔212本身的截面積。例如，當貫穿孔212為矩形貫穿孔時，貫穿孔212之間的間隙寬度W遠小於貫穿孔212之邊長L，如此可使所有貫穿孔212在高分子膜210上所佔的面積遠大於所有間隙所佔的面積。又例如，當貫穿孔212為圓形貫穿孔時，貫穿孔212之間的間隙寬度遠小於貫穿孔212之半徑，如此可使所有貫穿孔212在高分子膜210上所佔的面積遠大於所有間隙所佔的面積。另外，上述高分子膜210之材質亦可採用聚亞醯氨(Polyimide)、聚碳酸酯(Poly-carbonate)、乙烯對苯二甲酸酯(PET)、聚乙烯(PE)、尼龍、鐵氟龍等熱塑型塑料薄膜，並具有可撓曲之捲繞性質。並且，上述高分子膜210之厚度可為100奈米(nm)~1000微米(um)。In addition, the gap width between the through holes 212 is much smaller than the cross-sectional area of the through hole 212 itself. For example, when the through hole 212 is a rectangular through hole, the gap width W between the through holes 212 is much smaller than the side length L of the through hole 212, so that the area occupied by all the through holes 212 on the polymer film 210 is much larger than The area occupied by all gaps. For example, when the through hole 212 is a circular through hole, the gap width between the through holes 212 is much smaller than the radius of the through hole 212, so that the area of all the through holes 212 on the polymer film 210 is much larger than that of all. The area occupied by the gap. In addition, the material of the polymer film 210 may be polyimide, poly-carbonate, ethylene terephthalate (PET), polyethylene (PE), nylon, or iron fluoride. Thermoplastic plastic film such as dragon, and has flexible winding properties. Further, the polymer film 210 may have a thickness of from 100 nanometers (nm) to 1000 micrometers (um).
接著，進行保護層形成步驟120，以於高分子膜210之表面上形成保護層220，以提供遮罩200。在本實施例中，保護層220可為氮化物或氧化物，係可利用物理之濺鍍或蒸鍍之方式來形成，但本發明之實施例並不受限於此，亦可採用化學氣相沈積等類似方式為之。並且，此保護層220之厚度可為1nm~100um。Next, a protective layer forming step 120 is performed to form a protective layer 220 on the surface of the polymer film 210 to provide the mask 200. In this embodiment, the protective layer 220 may be a nitride or an oxide, which may be formed by physical sputtering or evaporation. However, embodiments of the present invention are not limited thereto, and chemical gas may also be used. Phase deposition and the like are similar. Moreover, the thickness of the protective layer 220 may be 1 nm to 100 um.
如第2c圖所示，在保護層形成步驟120中，保護層220之一部份會覆蓋在高分子膜210之上表面，而另一部分則會覆蓋在貫穿孔212之側壁上，如此貫穿孔212之截面積會縮減而變成貫穿遮罩200之貫穿孔222。As shown in FIG. 2c, in the protective layer forming step 120, one portion of the protective layer 220 covers the upper surface of the polymer film 210, and the other portion covers the sidewall of the through hole 212, such that the through hole The cross-sectional area of 212 is reduced to become a through hole 222 through the mask 200.
值得注意的是，在保護層形成步驟120中，即便貫穿孔222具有較小的截面積，但其邊長或半徑仍遠大於貫穿孔222間的間隙寬度。例如，當矩形之貫穿孔212被保護層220填充而變成貫穿孔222後，貫穿孔222之邊長仍應遠大於貫穿孔222之間的間隙寬度。又例如，當圓形之貫穿孔212被保護層220填充而變成貫穿孔222後，貫穿孔222之半徑仍應遠大於貫穿孔222之間的間隙寬度。It should be noted that in the protective layer forming step 120, even if the through hole 222 has a small cross-sectional area, its side length or radius is still much larger than the gap width between the through holes 222. For example, when the rectangular through hole 212 is filled by the protective layer 220 to become the through hole 222, the side length of the through hole 222 should be much larger than the gap width between the through holes 222. For another example, when the circular through hole 212 is filled by the protective layer 220 to become the through hole 222, the radius of the through hole 222 should be much larger than the gap width between the through holes 222.
在保護層形成步驟120後，接著進行固定步驟130，以將遮罩200固定於半導體基材300之表面上，如第2d圖所示。在本實施例中，遮罩200係利用黏膠來固定在半導體基材300上，但本發明之實施例並不受限於此。在本發明之其他實施例中，遮罩200亦可利用靜電力來固定在半導體基材300上，而此該遮罩移除步驟係利用一電荷中和裝置，例如靜電手環來將遮罩自半導體基材之表面上移除。此外，除上述所採用之黏膠與靜電力外，亦可以凡得瓦力(van der Waals' forces)作為遮罩200附著於半導體基材300的表面上之方式，當然其中所利用的分子間引力，係可經過材質之研究設計後而可達到此一需求。After the protective layer forming step 120, a fixing step 130 is then performed to fix the mask 200 to the surface of the semiconductor substrate 300 as shown in Fig. 2d. In the present embodiment, the mask 200 is fixed to the semiconductor substrate 300 by means of an adhesive, but the embodiment of the present invention is not limited thereto. In other embodiments of the present invention, the mask 200 may also be attached to the semiconductor substrate 300 by electrostatic force, and the mask removal step utilizes a charge neutralizing device, such as an electrostatic wristband, to mask the mask. Removed from the surface of the semiconductor substrate. In addition, in addition to the above-mentioned adhesive and electrostatic force, van der Waals' forces can also be used as a way for the mask 200 to adhere to the surface of the semiconductor substrate 300, of course, the intermolecular utilized Gravity can be achieved through the research and design of materials.
在固定步驟130後，接著進行蝕刻步驟140，以利用遮罩200來蝕刻半導體基材300之表面，如第2e圖所示。在本發明之實施例中，蝕刻步驟140可利用乾式蝕刻或溼式蝕刻來進行，但本發明之實施例並不受限於此。在蝕刻步驟140中，由於遮罩200的具有保護層220，因此蝕刻液不會對遮罩200進行蝕刻，而僅會根據遮罩之貫穿孔212的形狀來對半導體基材300進行蝕刻。當貫穿孔212為矩形貫穿孔時，貫穿孔212的形狀也應為矩形，因此在半導體基材300的表面上會形成倒金字塔狀的凹槽310。又，當貫穿孔212為圓形貫穿孔時，貫穿孔212的形狀也應為圓形，因此在半導體基材300的表面上會形成倒圓錐狀的凹槽310。After the fixing step 130, an etching step 140 is then performed to etch the surface of the semiconductor substrate 300 using the mask 200, as shown in FIG. 2e. In an embodiment of the invention, the etching step 140 may be performed using dry etching or wet etching, but embodiments of the invention are not limited thereto. In the etching step 140, since the mask 200 has the protective layer 220, the etching liquid does not etch the mask 200, and only the semiconductor substrate 300 is etched according to the shape of the through hole 212 of the mask. When the through hole 212 is a rectangular through hole, the shape of the through hole 212 should also be rectangular, so that an inverted pyramid-shaped groove 310 is formed on the surface of the semiconductor substrate 300. Further, when the through hole 212 is a circular through hole, the shape of the through hole 212 should also be circular, and thus an inverted conical groove 310 is formed on the surface of the semiconductor substrate 300.
在蝕刻步驟140後，接著進行遮罩移除步驟150，以將遮罩200自半導體基材300的表面上移除，如第2f圖所示。在本實施例中，遮罩200係利用黏膠來黏貼在半導體基材300上，因此可利用相應的黏膠清除劑來將粘膠去除，使遮罩200能簡易地從半導體基材300上移除。在本發明之另一實施例中，遮罩200係利用靜電力來黏貼在半導體基材300上，因此可利用靜電中和裝置來將靜電力去除，使遮罩200能簡易地從半導體基材300上移除。值得注意的是，若黏膠、靜電力或凡得瓦力的固定力不強，亦可用手來直接移除遮罩200，而不需其他用來減輕固定力的輔具。當然，於大量生產時，亦可採用自動化之機器、設備來移除此遮罩200。After the etching step 140, a mask removal step 150 is then performed to remove the mask 200 from the surface of the semiconductor substrate 300, as shown in Figure 2f. In the present embodiment, the mask 200 is adhered to the semiconductor substrate 300 by using an adhesive, so that the corresponding adhesive remover can be used to remove the adhesive, so that the mask 200 can be easily removed from the semiconductor substrate 300. Remove. In another embodiment of the present invention, the mask 200 is adhered to the semiconductor substrate 300 by electrostatic force, so that the electrostatic neutralization device can be used to remove the electrostatic force, so that the mask 200 can be easily removed from the semiconductor substrate. Removed on 300. It is worth noting that if the adhesive force of the adhesive, electrostatic force or van der Waals force is not strong, the mask 200 can be directly removed by hand without other auxiliary means for reducing the fixing force. Of course, in mass production, automated masks and equipment can also be used to remove the mask 200.
由上述說明可知，本發明實施例之圖形化半導體基材表面之方法100係先完成遮罩上的圖案，再利用黏膠或靜電力等方式將此遮罩固定於半導體基材上，以完成半導體基材的蝕刻，如此，遮罩的形成與移除可較習知技術更為簡便。若利用本發明實施例之圖形化半導體基材表面之方法來於太陽能電池之表面上形成粗糙結構，即可降低太陽能電池的製造成本與製造時間。It can be seen from the above description that the method 100 for patterning the surface of a semiconductor substrate in the embodiment of the present invention first completes the pattern on the mask, and then fixes the mask on the semiconductor substrate by means of adhesive or electrostatic force to complete The etching of the semiconductor substrate, as such, the formation and removal of the mask can be made easier than conventional techniques. If the method of patterning the surface of the semiconductor substrate of the embodiment of the present invention is used to form a rough structure on the surface of the solar cell, the manufacturing cost and manufacturing time of the solar cell can be reduced.
值得注意的是，本發明實施例之圖形化半導體基材表面之方法100不僅可應用於太陽能電池的製作，亦可應用於其他半導體裝置的製作。It should be noted that the method 100 for patterning the surface of a semiconductor substrate in the embodiment of the present invention can be applied not only to the fabrication of solar cells, but also to the fabrication of other semiconductor devices.
請同時參照第3圖與第4a-4b圖，第3圖係繪示根據本發明實施例之高分子膜提供步驟110的流程示意圖，第4a圖係繪示高分子膜500的結構示意圖，第4b圖係繪示原始高分子膜500的裁切示意圖。由上述說明可知，在本發明實施例之圖形化半導體基材表面之方法中，遮罩並非如習知技術一般直接形成在半導體基材上，因此本實施例之高分子膜提供步驟110提供了一種簡便的高分子膜製造步驟，以進一步改善圖形化半導體基材表面之方法100。Referring to FIG. 3 and FIG. 4a-4b, FIG. 3 is a schematic flow chart showing the step 110 of providing a polymer film according to an embodiment of the present invention, and FIG. 4a is a schematic view showing the structure of the polymer film 500. 4b is a schematic view showing the cutting of the original polymer film 500. It can be seen from the above description that in the method for patterning the surface of the semiconductor substrate in the embodiment of the present invention, the mask is not directly formed on the semiconductor substrate as in the prior art, so the polymer film providing step 110 of the embodiment provides A simple polymer film manufacturing step to further improve the method 100 of patterning a semiconductor substrate surface.
在高分子膜提供步驟110中，首先進行高分子膜提供步驟112，以提供原始的高分子膜500。此原始高分子膜500將於後續的步驟中被裁切成多張高分子膜210，如前述第2a圖所。又如第4a圖所示，原始高分子膜500亦具有多個貫穿孔212，且原始高分子膜500所具有的貫穿孔數量遠大於高分子膜210。接著，進行裁切步驟114，以將原始高分子膜500置放於半導體基材300上，並根據半導體基材300的面積/尺寸來裁切原始高分子膜500，如此即可提供合適置放於半導體基材300的高分子膜210。In the polymer film supply step 110, the polymer film supply step 112 is first performed to provide the original polymer film 500. The original polymer film 500 is cut into a plurality of polymer films 210 in a subsequent step, as shown in the aforementioned Fig. 2a. Further, as shown in FIG. 4a, the original polymer film 500 also has a plurality of through holes 212, and the original polymer film 500 has a number of through holes much larger than that of the polymer film 210. Next, a cutting step 114 is performed to place the original polymer film 500 on the semiconductor substrate 300, and the original polymer film 500 is cut according to the area/size of the semiconductor substrate 300, so that proper placement can be provided. The polymer film 210 of the semiconductor substrate 300.
此外，亦可不採裁切之方式進行，即將上述已捲繞好之原始高分子膜500拉出後，與半導體基材300上下相互對位後，附著固定於半導體基材300上面，並進行後續相關製程。當然，此原始高分子膜500係為已預先做了如上述保護層220之氮化物或氧化物的型態。並且，上述原始高分子膜500上之多個貫穿孔212係可預先以微米壓印、沖孔、水刀或雷射切割等方式先行加工處理。Alternatively, the raw polymer film 500 that has been wound up may be pulled out, and then aligned with the semiconductor substrate 300, and then adhered and fixed to the semiconductor substrate 300, and then carried out. Related processes. Of course, the original polymer film 500 is in a form in which the nitride or oxide of the protective layer 220 has been previously prepared. Further, the plurality of through holes 212 in the original polymer film 500 may be processed in advance by micron imprinting, punching, water jetting or laser cutting.
再者，上述步驟中，亦可採用半導體基材300在上，原始高分子膜500在下之附著固定方式進行，並經過酸/鹼液之蝕刻以得到所欲之表面粗糙結構。Furthermore, in the above steps, the semiconductor substrate 300 may be used, and the original polymer film 500 may be adhered to the underlying layer, and subjected to acid/alkali etching to obtain a desired surface roughness.
此外，本發明之技術除上述應用於太陽能電池表面粗糙化之外，亦可應用於其他相關半導體基材表面上來形成所設計之特定圖案，從而進行相關之製作。In addition, the technology of the present invention can be applied to the surface of other related semiconductor substrates to form a specific pattern to be designed in addition to the above-described application to the surface roughening of the solar cell, thereby performing related fabrication.
雖然本發明已以數個實施例揭露如上，然其並非用以限定本發明，在本發明所屬技術領域中任何具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the invention has been described above in terms of several embodiments, it is not intended to limit the scope of the invention, and the invention may be practiced in various embodiments without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the appended claims.
100．．．圖形化半導體基材表面之方法100. . . Method of patterning the surface of a semiconductor substrate
110．．．高分子膜提供步驟110. . . Polymer film supply step
112．．．原始高分子膜提供步驟112. . . Original polymer film providing step
114．．．裁切步驟114. . . Cutting step
120．．．保護層形成步驟120. . . Protective layer forming step
130．．．固定步驟130. . . Fixed step
140．．．蝕刻步驟140. . . Etching step
150．．．遮罩移除步驟150. . . Mask removal step
200．．．遮罩200. . . Mask
210．．．高分子膜210. . . Polymer film
212．．．貫穿孔212. . . Through hole
220．．．保護層220. . . The protective layer
222．．．貫穿孔222. . . Through hole
300．．．半導體基材300. . . Semiconductor substrate
310．．．凹槽310. . . Groove
500．．．原始高分子膜500. . . Original polymer film
A-A’．．．切線A-A’. . . Tangent
L．．．貫穿孔邊長L. . . Through hole length
W．．．間隙寬度W. . . Gap width
為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，上文特舉數個較佳實施例，並配合所附圖式，作詳細說明如下：The above and other objects, features, and advantages of the present invention will become more apparent and understood.
第1圖係繪示根據本發明實施例之圖形化半導體基材表面之方法的流程示意圖。1 is a flow chart showing a method of patterning a surface of a semiconductor substrate in accordance with an embodiment of the present invention.
第2a-2f圖係繪示根據本發明實施例之對應圖形化半導體基材表面之方法之各步驟的半成品剖面結構示意圖。2a-2f are schematic cross-sectional views showing the steps of a semi-finished product corresponding to the steps of the method for patterning the surface of a semiconductor substrate in accordance with an embodiment of the present invention.
第3圖係繪示根據本發明實施例之高分子膜提供步驟的流程示意圖。Fig. 3 is a flow chart showing the steps of providing a polymer film according to an embodiment of the present invention.
第4a圖係繪示根據本發明實施例之原始高分子膜的結構示意圖。Fig. 4a is a schematic view showing the structure of an original polymer film according to an embodiment of the present invention.
第4b圖係繪示根據本發明實施例之原始高分子膜的裁切示意圖。Figure 4b is a schematic view showing the cutting of the original polymer film according to an embodiment of the present invention.
100．．．圖形化半導體基材表面之方法100. . . Method of patterning the surface of a semiconductor substrate
110．．．高分子膜提供步驟110. . . Polymer film supply step
120．．．保護層形成步驟120. . . Protective layer forming step
130．．．固定步驟130. . . Fixed step
140．．．蝕刻步驟140. . . Etching step
150．．．遮罩移除步驟150. . . Mask removal step
Claims (10)
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI259330B (en) * | 2003-09-29 | 2006-08-01 | Sony Corp | Stencil mask, production method thereof, exposure apparatus, exposure method and electronic device production method |
| TWI263457B (en) * | 2004-03-31 | 2006-10-01 | Seiko Epson Corp | Mask, method for manufacturing a mask, method for manufacturing an electro-optical device, and electronic equipment |
| TW200719415A (en) * | 2005-11-08 | 2007-05-16 | Ls Cable Ltd | Dual printing mask for screen printing |
| TW200804097A (en) * | 2006-04-07 | 2008-01-16 | Mitsubishi Paper Mills Ltd | Method for manufacturing screen printing mask with resin, and screen printing mask with resin |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI259330B (en) * | 2003-09-29 | 2006-08-01 | Sony Corp | Stencil mask, production method thereof, exposure apparatus, exposure method and electronic device production method |
| TWI263457B (en) * | 2004-03-31 | 2006-10-01 | Seiko Epson Corp | Mask, method for manufacturing a mask, method for manufacturing an electro-optical device, and electronic equipment |
| TW200719415A (en) * | 2005-11-08 | 2007-05-16 | Ls Cable Ltd | Dual printing mask for screen printing |
| TW200804097A (en) * | 2006-04-07 | 2008-01-16 | Mitsubishi Paper Mills Ltd | Method for manufacturing screen printing mask with resin, and screen printing mask with resin |
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