TWI463560B - Wet etching method and substrate carrier - Google Patents
Wet etching method and substrate carrier Download PDFInfo
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- TWI463560B TWI463560B TW101140116A TW101140116A TWI463560B TW I463560 B TWI463560 B TW I463560B TW 101140116 A TW101140116 A TW 101140116A TW 101140116 A TW101140116 A TW 101140116A TW I463560 B TWI463560 B TW I463560B
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Description
本發明是有關於一種蝕刻方法，且特別是有關於一種濕式蝕刻方法與基板承載裝置。The present invention relates to an etching method, and more particularly to a wet etching method and substrate carrying device.
目前的單面蝕刻技術主要有批次式(Batch Type)、串列式(In-line Type)、單面噴射式(One-side Injection Type)、以及結合串列式與單面噴射式的混合式(Hybrid Type)。批次式的單面蝕刻技術係先利用遮罩層保護住各基板沒有要進行蝕刻的一面，再將這些基板整批地浸泡在裝有蝕刻溶液的蝕刻槽內，來進行濕式蝕刻。然而，此種批次式蝕刻技術需先遮住基板之一面，因此步驟較為複雜。而且，由於蝕刻液在蝕刻槽內需填充到一定分量，因此會造成蝕刻劑浪費。此外，由於蝕刻液均裝填在同一蝕刻槽中，因此會造成蝕刻液交互汙染與濃度波動的問題。The current single-sided etching technology mainly includes Batch Type, In-line Type, One-side Injection Type, and a combination of tandem and single-sided jet. (Hybrid Type). The batch type single-sided etching technique firstly uses a mask layer to protect each substrate from the side to be etched, and then immerses the substrates in an etching bath containing an etching solution in batches for wet etching. However, such a batch etching technique needs to cover one side of the substrate first, so the steps are complicated. Moreover, since the etching liquid needs to be filled in a certain amount in the etching bath, the etchant is wasted. In addition, since the etching liquid is filled in the same etching bath, the etching liquid is contaminated and the concentration fluctuation is caused.
串列式的單面蝕刻技術同樣係將蝕刻液裝在蝕刻槽內，再於蝕刻液之液面下裝設滾輪，以承托基板。當基板放置在滾輪上時，蝕刻液可接觸並蝕刻基板之下表面與側面，但並不會接觸基板之上表面，而達成基板的單面蝕刻。然而，在此蝕刻技術中，由於蝕刻液也是裝填在蝕刻槽內，因此同樣會有蝕刻液浪費、交互汙染與濃度波動的問題。此外，蝕刻槽內的蝕刻液受到震動時，液面會產生波動，如此一來可能使得蝕刻液溢流到基板不需蝕刻的上表面，而在基板之上表面上形成蝕刻痕(Etching Mark)，故此蝕刻 技術的單面蝕刻效果不佳。The tandem single-sided etching technique also mounts an etching solution in an etching bath, and then mounts a roller under the liquid surface of the etching liquid to support the substrate. When the substrate is placed on the roller, the etching solution can contact and etch the lower surface and the side surface of the substrate, but does not contact the upper surface of the substrate, thereby achieving single-sided etching of the substrate. However, in this etching technique, since the etching liquid is also filled in the etching bath, there is also a problem of waste of etching liquid, cross contamination, and concentration fluctuation. In addition, when the etching liquid in the etching bath is subjected to vibration, the liquid surface may fluctuate, which may cause the etching liquid to overflow to the upper surface of the substrate which does not need to be etched, and form an etching mark on the upper surface of the substrate (Etching Mark). So etching The single side etching of the technology is not effective.
單面噴射式蝕刻技術係將基板設置在可旋轉之承載平台上，並在承載平台帶動基板旋轉的同時，從上方對基板之上表面施加蝕刻液的方式，來進行基板之單面蝕刻。然而，由於此種蝕刻技術係利用旋轉離心力來避免蝕刻液滲到基板之下表面，但蝕刻液的控制不易而仍可能蔓延到基板之下表面，而在基板之下表面上形成蝕刻痕。故，此蝕刻技術的單面蝕刻效果不佳。The single-sided jet etching technique is to place the substrate on a rotatable carrying platform, and to perform one-side etching of the substrate by applying an etching liquid to the upper surface of the substrate from above while the substrate is rotated by the carrying platform. However, since such an etching technique utilizes a rotating centrifugal force to prevent the etching liquid from penetrating to the lower surface of the substrate, the control of the etching liquid is not easy and may still spread to the lower surface of the substrate, and an etching mark is formed on the lower surface of the substrate. Therefore, the single-sided etching effect of this etching technique is not good.
另外，由於混合式蝕刻技術係整合串列式與單面噴射式的技術，因此也具有單面蝕刻效果不佳的問題。In addition, since the hybrid etching technique integrates the techniques of tandem and single-sided jet, it also has a problem of poor single-sided etching.
因此，本發明之一態樣就是在提供一種濕式蝕刻方法，其可有效防止蝕刻液溢流到基板之欲蝕刻表面的相對表面，而可避免蝕刻痕在此相對表面上形成。故，可確實達成基板之高品質的單面蝕刻。Accordingly, it is an aspect of the present invention to provide a wet etching method which can effectively prevent an etchant from overflowing to an opposite surface of a substrate to be etched surface, and can prevent etching marks from being formed on the opposite surface. Therefore, high-quality single-sided etching of the substrate can be surely achieved.
本發明之另一態樣是在提供一種濕式蝕刻方法，其在進行蝕刻時，可提供個別或混合蝕刻液，因此可對不同蝕刻製程的整合進行細部且進一步的微調，故可增加蝕刻製程的彈性。Another aspect of the present invention is to provide a wet etching method which can provide individual or mixed etching liquids during etching, so that the integration of different etching processes can be finely and further fine-tuned, thereby increasing the etching process. Flexibility.
本發明之又一態樣是在提供一種濕式蝕刻方法，其可精確控制消耗之蝕刻劑的量，而可減少蝕刻劑的浪費。此外，運用此濕式蝕刻方法，可避免習知技術之蝕刻液交互汙染與濃度波動的問題。Still another aspect of the present invention is to provide a wet etching method which can precisely control the amount of etchant consumed, and can reduce waste of an etchant. In addition, by using this wet etching method, the problem of cross-contamination and concentration fluctuation of the etching solution of the prior art can be avoided.
本發明之再一態樣是在提供一種基板承載裝置，其不 同承載面氣孔可導出不同氣體量，而可將蝕刻後之基板推向基板運送裝置，因此可大幅提升蝕刻製程的效率。Yet another aspect of the present invention is to provide a substrate carrying device that does not The same pore volume can be derived from the bearing surface, and the etched substrate can be pushed toward the substrate transport device, thereby greatly improving the efficiency of the etching process.
根據本發明之上述目的，提出一種濕式蝕刻方法，其包含下列步驟。使用一基板承載體之複數個承載面氣孔吸附一基板。施加一蝕刻液於基板之一第一表面上，並使用基板承載體之複數非承載面氣孔導出氣體，以防止蝕刻液溢流至基板相對於第一表面之一第二表面。移除第一表面上之蝕刻液。使用前述之承載面氣孔導出氣體，以使基板往一預定方向移動。In accordance with the above object of the present invention, a wet etching method is proposed which comprises the following steps. A substrate is adsorbed by a plurality of bearing surface air holes of a substrate carrier. An etchant is applied to one of the first surfaces of the substrate, and the gas is evacuated using a plurality of non-bearing surface pores of the substrate carrier to prevent the etchant from overflowing to the second surface of the substrate relative to the first surface. The etchant on the first surface is removed. The gas is led out using the aforementioned bearing surface air holes to move the substrate in a predetermined direction.
依據本發明之一實施例，上述之預定方向係往一基板運送裝置的方向。According to an embodiment of the invention, the predetermined direction is in the direction of a substrate transport device.
依據本發明之另一實施例，上述使用複數個承載面氣孔導出氣體之步驟更包含使這些承載面氣孔導出不同氣體量，藉以將基板推向預定方向。In accordance with another embodiment of the present invention, the step of deriving a gas using a plurality of bearing surface pores further includes directing the bearing surface pores to different amounts of gas to thereby push the substrate toward a predetermined direction.
根據本發明之上述目的，另提出一種基板承載裝置，其包含一基板承載體以及一氣體控制裝置。基板承載體具有一承載面，且包含複數個第一承載面氣孔、複數個第二承載面氣孔、複數非承載面氣孔、一第一氣體管路、一第二氣體管路以及一第三氣體管路。氣體控制裝置經由第一氣體管路、第二氣體管路與第三氣體管路分別調整前述之第一承載面氣孔、第二承載面氣孔與非承載面氣孔的進氣和出氣。According to the above object of the present invention, there is further provided a substrate carrying device comprising a substrate carrier and a gas control device. The substrate carrier has a bearing surface and includes a plurality of first bearing surface air holes, a plurality of second bearing surface air holes, a plurality of non-bearing surface air holes, a first gas line, a second gas line and a third gas Pipeline. The gas control device adjusts the intake air and the air outlet of the first bearing surface air hole, the second bearing surface air hole and the non-bearing surface air hole respectively through the first gas line, the second gas line and the third gas line.
依據本發明之一實施例，上述之第一承載面氣孔與第二承載面氣孔分別設於基板承載體之一第一區與一第二區中，第一氣體管路設於第一區之一非中央處，第二氣體管 路設於第二區之一中央處。According to an embodiment of the present invention, the first bearing surface air hole and the second bearing surface air hole are respectively disposed in one of the first area and the second area of the substrate carrier, and the first gas pipeline is disposed in the first area. a non-central, second gas tube The road is located in the center of one of the second districts.
依據本發明之另一實施例，上述之複數個第一承載面氣孔不均勻地設置在該第一區中。According to another embodiment of the present invention, the plurality of first bearing surface air holes are unevenly disposed in the first area.
依據本發明之又一實施例，上述之每一非承載面氣孔斜設於基板承載體中，以朝承載面所承載之一基板斜向導出氣體。According to still another embodiment of the present invention, each of the non-bearing surface air holes is obliquely disposed in the substrate carrier to guide the gas obliquely toward a substrate carried by the bearing surface.
依據本發明之再一實施例，上述之基板承載裝置更包含一抗摩擦緩衝層設於承載面上。According to still another embodiment of the present invention, the substrate carrying device further includes an anti-friction buffer layer disposed on the bearing surface.
請參照第1圖，其係繪示依照本發明之一實施方式的一種基板承載裝置的剖面示意圖。在此實施方式中，基板承載裝置100可用以承載欲進行處理的基板，例如欲進行單面濕式蝕刻基板。在一實施例中，此基板可例如為太陽能電池基板。Please refer to FIG. 1 , which is a cross-sectional view of a substrate carrying device according to an embodiment of the present invention. In this embodiment, the substrate carrier device 100 can be used to carry a substrate to be processed, for example, to wet-etch a single-sided substrate. In an embodiment, the substrate can be, for example, a solar cell substrate.
基板承載裝置100主要包含基板承載體102與氣體控制裝置104。基板承載體102具有適用以承載基板之承載面106。在基板承載體102應用在蝕刻製程的實施例中，基板承載體102之材料可選用耐腐蝕材料，例如鐵氟龍與不鏽鋼。基板承載體102包含數個第一承載面氣孔108、數個第二承載面氣孔110、數個非承載面氣孔118、一第一氣體管路120、一第二氣體管路122以及一第三氣體管路124。第一承載面氣孔108與第二承載面氣孔110的一端開口均在承載面106，而可從承載面106進氣或出氣。在一實施例中，基板承載體102可區分成第一區112與第二區 114，其中第一區112相對而言為基板進入基板承載體102的區域，第二區114為基板離開基板承載體102的區域。第一承載面氣孔108設於基板承載體102之第一區112中，而第二承載面氣孔110則設於基板承載體102之第二區114中。The substrate carrying device 100 mainly includes a substrate carrier 102 and a gas control device 104. The substrate carrier 102 has a bearing surface 106 adapted to carry a substrate. In embodiments where the substrate carrier 102 is applied to an etch process, the material of the substrate carrier 102 may be selected from corrosion resistant materials such as Teflon and stainless steel. The substrate carrier 102 includes a plurality of first bearing surface air holes 108, a plurality of second bearing surface air holes 110, a plurality of non-bearing surface air holes 118, a first gas line 120, a second gas line 122, and a third Gas line 124. Both the first bearing surface air hole 108 and the second bearing surface air hole 110 have an opening at the bearing surface 106, and may be inflated or vented from the bearing surface 106. In an embodiment, the substrate carrier 102 can be divided into a first region 112 and a second region. 114, wherein the first region 112 is a region where the substrate enters the substrate carrier 102, and the second region 114 is a region where the substrate leaves the substrate carrier 102. The first bearing surface air hole 108 is disposed in the first region 112 of the substrate carrier 102, and the second bearing surface air hole 110 is disposed in the second region 114 of the substrate carrier 102.
請參照第2圖，其係繪示依照本發明之一實施方式的一種基板承載裝置的上視示意圖。在一實施例中，第一承載面氣孔108以不均勻的方式設置在基板承載體102之第一區112中。舉例而言，如第2圖所示，愈接近基板進入基板承載體102之一邊，第一承載面氣孔108的排列愈密集；而較遠離基板進入基板承載體102之一邊，第一承載面氣孔108的排列較疏鬆。另一方面，第二承載面氣孔110可以均勻的方式或是不均勻的方式設置在基板承載體102之第二區114中。在一例子中，第二承載面氣孔110可均勻地排列在第二區114中，且第二承載面氣孔110之排列密度密度較佳係小於第一承載面氣孔108在接近基板進入基板承載體102之一邊的排列密度。Referring to FIG. 2, a schematic top view of a substrate carrying device according to an embodiment of the present invention is shown. In an embodiment, the first bearing surface air vent 108 is disposed in the first region 112 of the substrate carrier 102 in a non-uniform manner. For example, as shown in FIG. 2, the closer the substrate enters one side of the substrate carrier 102, the denser the arrangement of the first bearing surface air holes 108; and the farther away from the substrate into one side of the substrate carrier 102, the first bearing surface air holes The arrangement of 108 is loose. On the other hand, the second bearing surface air holes 110 may be disposed in the second region 114 of the substrate carrier 102 in a uniform manner or in a non-uniform manner. In an example, the second bearing surface air holes 110 may be evenly arranged in the second area 114, and the second carrier surface air holes 110 preferably have a density density smaller than the first bearing surface air holes 108 in the proximity of the substrate into the substrate carrier. The density of the arrangement of one side of 102.
在另一實施例中，第一承載面氣孔108也可以均勻的方式設置在基板承載體102之第一區112中。在又一實施例中，所有的第一承載面氣孔108與第二承載面氣孔110可以均勻的方式設置在基板承載體102之整個基板承載體102中。In another embodiment, the first bearing surface air holes 108 may also be disposed in the first region 112 of the substrate carrier 102 in a uniform manner. In still another embodiment, all of the first bearing surface air holes 108 and the second bearing surface air holes 110 may be disposed in the entire substrate carrier 102 of the substrate carrier 102 in a uniform manner.
請再次參照第1圖，在基板承載體102中，非承載面氣孔118的二端開口均非位在承載面106中。在一實施例中，非承載面氣孔118之一端開口位於側面126中，另一 端開口則位於基板承載體102之表面128中。其中，側面126與承載面106相鄰，表面128和承載面106相對。每一非承載面氣孔118傾斜地設於基板承載體102中，且經由非承載面氣孔118位於基板承載體102之側面126中的開口，非承載面氣孔118可朝承載面106所承載之基板而斜向導出氣體。在本實施方式中，非承載面氣孔118在基板承載體102之側面126的開口位置與非承載面氣孔118之傾斜角度可根據實際之製程需求來設計。Referring again to FIG. 1, in the substrate carrier 102, the two end openings of the non-bearing surface air holes 118 are not located in the bearing surface 106. In one embodiment, one end opening of the non-load bearing surface vent 118 is located in the side 126, and the other The end opening is located in the surface 128 of the substrate carrier 102. Wherein the side surface 126 is adjacent to the bearing surface 106 and the surface 128 is opposite the bearing surface 106. Each non-bearing surface air hole 118 is obliquely disposed in the substrate carrier 102, and is located in the opening in the side 126 of the substrate carrier 102 via the non-bearing surface air hole 118. The non-bearing surface air hole 118 can face the substrate carried by the bearing surface 106. The gas is exported obliquely. In the present embodiment, the angle of inclination of the non-bearing surface air hole 118 between the opening position of the side surface 126 of the substrate carrier 102 and the non-bearing surface air hole 118 can be designed according to actual process requirements.
第一氣體管路120之一端位於基板承載體102之第一區112中，另一端位於氣體控制裝置104中，且第一氣體管路120與第一承載面氣孔108互相連通。第二氣體管路122之一端位於基板承載體102之第二區114中，另一端位於氣體控制裝置104中，且第二氣體管路122與第二承載面氣孔110互相連通。第三氣體管路124之一端與非承載面氣孔118接合，另一端位於氣體控制裝置104中，且第三氣體管路124與非承載面氣孔118互相連通。One end of the first gas line 120 is located in the first region 112 of the substrate carrier 102, the other end is located in the gas control device 104, and the first gas line 120 and the first bearing surface air hole 108 are in communication with each other. One end of the second gas line 122 is located in the second region 114 of the substrate carrier 102, the other end is located in the gas control device 104, and the second gas line 122 and the second bearing surface air hole 110 are in communication with each other. One end of the third gas line 124 is joined to the non-bearing surface air hole 118, the other end is located in the gas control device 104, and the third gas line 124 and the non-bearing surface air hole 118 are in communication with each other.
因此，氣體控制裝置104可經由第一氣體管路120、第二氣體管路122與第三氣體管路124，分別調整第一承載面氣孔108、第二承載面氣孔110與非承載面氣孔118的進氣與出氣。Therefore, the gas control device 104 can adjust the first bearing surface air hole 108, the second bearing surface air hole 110 and the non-bearing surface air hole 118 via the first gas line 120, the second gas line 122 and the third gas line 124, respectively. Intake and out.
在一實施例中，如第1圖與第2圖所示，第一氣體管路120之一端可設於基板承載體102之第一區112的非中央處，而第二氣體管路122之一端可設於基板承載體102之第二區114的中央處。藉由這樣的設計，可調控基板承載體102之承載面106的進氣與抽氣的分布。在另一實施 例中，第一氣體管路120之一端亦可設於基板承載體102之第一區112的中央處，而第二氣體管路122之一端可設於基板承載體102之第二區114的中央處或非中央處。In one embodiment, as shown in FIGS. 1 and 2, one end of the first gas line 120 may be disposed at a non-center of the first region 112 of the substrate carrier 102, and the second gas line 122 One end may be provided at the center of the second region 114 of the substrate carrier 102. With such a design, the distribution of intake and exhaust of the bearing surface 106 of the substrate carrier 102 can be regulated. In another implementation For example, one end of the first gas line 120 may be disposed at the center of the first region 112 of the substrate carrier 102, and one end of the second gas line 122 may be disposed at the second region 114 of the substrate carrier 102. Central or non-central.
在一實施例中，基板承載裝置100更可根據製程需求，而選擇性地包含一抗摩擦緩衝層116，其中此抗摩擦緩衝層116設置在基板承載體102之承載面106上。此抗摩擦緩衝層116可使基板更滑順地進入與移出承載面106。In an embodiment, the substrate carrying device 100 further includes an anti-friction buffer layer 116 disposed on the bearing surface 106 of the substrate carrier 102 according to process requirements. This anti-friction buffer layer 116 allows the substrate to enter and exit the load bearing surface 106 more smoothly.
基板承載裝置100可應用於基板之單面濕式蝕刻製程中。請參照第3圖至第5圖，其係繪示依照本發明之一實施方式的一種濕式蝕刻方法的流程圖。在此實施方式中，進行基板之單面濕式蝕刻時，先將基板承載裝置100設置在由化學罩144所定義出的反應室154中。此化學罩144包含廢液排出裝置142，可將反應室154內的蝕刻廢液排出化學罩144。在基板承載裝置100之前後二側可配置有基板運送裝置138。在一實施例中，如第3圖所示，基板運送裝置138可為滾輪。然而，基板運送裝置138並不限於滾輪，而可為其他可運送基板的輸送裝置。舉例而言，基板運送裝置138可為輸送帶或輸送台。The substrate carrier device 100 can be applied to a one-sided wet etching process of a substrate. Please refer to FIG. 3 to FIG. 5 , which are flowcharts of a wet etching method according to an embodiment of the present invention. In this embodiment, when the single-sided wet etching of the substrate is performed, the substrate carrying device 100 is first placed in the reaction chamber 154 defined by the chemical mask 144. The chemical shield 144 includes a waste liquid discharge device 142 that discharges the etching waste liquid in the reaction chamber 154 from the chemical mask 144. A substrate transport device 138 may be disposed on the rear two sides before the substrate carrying device 100. In one embodiment, as shown in FIG. 3, the substrate transport device 138 can be a roller. However, the substrate transport device 138 is not limited to a roller, but may be another transport device that can transport the substrate. For example, the substrate transport device 138 can be a conveyor belt or a transport station.
此外，請先參照第4圖，反應室154內可配置偵測器140、氣體噴射器146與蝕刻液噴射器148。偵測器140設於基板運送裝置138與基板130進入基板承載體102之一邊之間，來感測進入基板承載體102上方之基板130的邊緣。氣體噴射器146可移動地配置在基板承載體102之上方。藉由一邊移動一邊朝基板承載體102上之基板130吹氣的方式，可將基板130上之蝕刻液150自基板130上移 除。另外，蝕刻液噴射器148可移動或不可移動地設於基板承載體102之上方，以對基板承載體102上之基板130施加蝕刻液150。In addition, referring to FIG. 4, the detector 140, the gas injector 146, and the etchant ejector 148 may be disposed in the reaction chamber 154. The detector 140 is disposed between the substrate carrying device 138 and the substrate 130 entering one side of the substrate carrier 102 to sense the edge of the substrate 130 that enters the substrate carrier 102. The gas injector 146 is movably disposed above the substrate carrier 102. The etching liquid 150 on the substrate 130 can be moved from the substrate 130 by blowing while moving toward the substrate 130 on the substrate carrier 102 while moving. except. In addition, the etchant ejector 148 is movably or non-movably disposed above the substrate carrier 102 to apply an etchant 150 to the substrate 130 on the substrate carrier 102.
請再次參照第3圖，基板運送裝置138將基板130運送至反應室154中時，在偵測器140第一次偵測到基板130之邊緣時，氣體控制裝置104透過第一氣體管路120與第二氣體管路122來供應氣體至基板承載體102，以承托基板130，使基板130以漂浮的方式進入基板承載體102之承載面106上方。如此一來，可避免基板130與承載面106之間產生摩擦，藉此可將基板130更順暢地運送至承載面106上。Referring again to FIG. 3, when the substrate transport device 138 transports the substrate 130 into the reaction chamber 154, the gas control device 104 passes through the first gas line 120 when the detector 140 first detects the edge of the substrate 130. The gas is supplied to the substrate carrier 102 with the second gas line 122 to support the substrate 130 such that the substrate 130 enters the bearing surface 106 of the substrate carrier 102 in a floating manner. In this way, friction between the substrate 130 and the carrying surface 106 can be avoided, whereby the substrate 130 can be more smoothly transported onto the carrying surface 106.
而當偵測器140第二次偵測到基板130之邊緣時，此時基板130已運送至蝕刻位置。在此同時，氣體控制裝置104先停止透過第一氣體管路120與第二氣體管路122來對基板承載體102供應氣體，再透過第一氣體管路120與第二氣體管路122來對基板承載體102進行抽氣。由於第一氣體管路120和第二氣體管路122分別與第一承載面氣孔108和第二承載面氣孔110連通，故此時第一承載面氣孔108和第二承載面氣孔110可吸附住基板130，而將基板130固定在承載面106上。When the detector 140 detects the edge of the substrate 130 for the second time, the substrate 130 has been transported to the etching position. At the same time, the gas control device 104 first stops the supply of gas to the substrate carrier 102 through the first gas line 120 and the second gas line 122, and then passes through the first gas line 120 and the second gas line 122. The substrate carrier 102 performs pumping. Since the first gas line 120 and the second gas line 122 are respectively connected to the first bearing surface air hole 108 and the second bearing surface air hole 110, the first bearing surface air hole 108 and the second bearing surface air hole 110 can adsorb the substrate at this time. 130, and the substrate 130 is fixed on the carrying surface 106.
接下來，氣體控制裝置104透過第三氣體管路124將氣體供應至非承載面氣孔118，以從非承載面氣孔118導出氣體。如第4圖所示，從非承載面氣孔118導出之氣體會噴向基板130之第二表面136的周緣。在此同時，利用蝕刻液噴射器148施加蝕刻液150於基板130之第一表面132 上。其中，基板130之第一表面132與第二表面136位於基板130之相對二側，基板130之第三表面134則接合第一表面132之外邊緣與第二表面136之外邊緣。Next, the gas control device 104 supplies gas to the non-load bearing surface vents 118 through the third gas line 124 to conduct gas from the non-bearing surface vents 118. As shown in FIG. 4, the gas derived from the non-bearing surface air holes 118 is sprayed toward the periphery of the second surface 136 of the substrate 130. At the same time, the etchant 150 is applied to the first surface 132 of the substrate 130 by the etchant ejector 148. on. The first surface 132 and the second surface 136 of the substrate 130 are located on opposite sides of the substrate 130, and the third surface 134 of the substrate 130 is joined to the outer edge of the first surface 132 and the outer edge of the second surface 136.
由於非承載面氣孔118導出之氣體會噴向基板130之第二表面136的周緣，因此可防止蝕刻液150溢流到基板130之第二表面136。如此一來，可使蝕刻液150僅與基板130之第一表面132和第三表面134接觸，而僅蝕刻基板130之第一表面132和第三表面134，順利完成基板130之單面蝕刻製程。藉由非承載面氣孔118的設計，可確實避免蝕刻痕在基板130之第二表面136產生。Since the gas derived from the non-load bearing surface vent 118 is sprayed toward the periphery of the second surface 136 of the substrate 130, the etchant 150 can be prevented from overflowing to the second surface 136 of the substrate 130. In this way, the etchant 150 can be brought into contact with only the first surface 132 and the third surface 134 of the substrate 130, and only the first surface 132 and the third surface 134 of the substrate 130 are etched, and the single-sided etching process of the substrate 130 is successfully completed. . By the design of the non-load bearing surface air holes 118, it is possible to surely avoid the occurrence of etching marks on the second surface 136 of the substrate 130.
在本實施方式中，藉由設計非承載面氣孔118在基板承載體102之側面126的開口位置、與非承載面氣孔118之傾斜角度，以及控制非承載面氣孔118導出之氣體量，來有效防止蝕刻液150溢流至基板130之第二表面136，進而可使基板承載體102所承載之基板達到良好之單面蝕刻。此外，由於非承載面氣孔118在基板承載體102之側面126的開口位置、與非承載面氣孔118之傾斜角度均係在基板承載體102製作時已固定，因此在濕式蝕刻製程期間，可透過調整從非承載面氣孔118導出之氣體量，更有效地防止蝕刻液150進入基板130之第二表面136。In the present embodiment, by designing the non-bearing surface air hole 118 at the opening position of the side surface 126 of the substrate carrier 102, the inclination angle with the non-bearing surface air hole 118, and controlling the amount of gas derived from the non-bearing surface air hole 118, it is effective. The etchant 150 is prevented from overflowing to the second surface 136 of the substrate 130, so that the substrate carried by the substrate carrier 102 can be subjected to good single-sided etching. In addition, since the opening position of the non-bearing surface air hole 118 on the side surface 126 of the substrate carrier 102 and the inclination angle of the non-bearing surface air hole 118 are fixed when the substrate carrier 102 is fabricated, during the wet etching process, By adjusting the amount of gas that is drawn from the non-load bearing surface vents 118, the etchant 150 is more effectively prevented from entering the second surface 136 of the substrate 130.
接著，如第4圖所示，完成基板130之第一表面132和第三表面134的蝕刻後，可利用氣體噴射器146在基板130之第一表面132的上方來回移動噴氣，以移除第一表面132上的蝕刻液150。Next, as shown in FIG. 4, after the etching of the first surface 132 and the third surface 134 of the substrate 130 is completed, the gas jet 146 may be used to move the jet back and forth over the first surface 132 of the substrate 130 to remove the An etchant 150 on a surface 132.
隨後，如第5圖所示，氣體控制裝置104先停止透過 第三氣體管路124來供應非承載面氣孔118氣體，並停止透過第一氣體管路120與第二氣體管路122來對基板承載體102抽氣。接著，轉而透過第一氣體管路120與第二氣體管路122來對基板承載體102供應氣體，藉以透過第一承載面氣孔108與第二承載面氣孔110來導出氣體，而將基板130自承載面106上抬升。Subsequently, as shown in Fig. 5, the gas control device 104 stops transmitting first. The third gas line 124 supplies the non-bearing surface pores 118 gas and stops the first gas line 120 and the second gas line 122 from pumping the substrate carrier 102. Then, the substrate carrier 102 is supplied with gas through the first gas line 120 and the second gas line 122, thereby diffusing the gas through the first bearing surface air hole 108 and the second bearing surface air hole 110, and the substrate 130 is extracted. Lifted from the load bearing surface 106.
在一實施例中，使用第一承載面氣孔108與第二承載面氣孔110來導出氣體以抬升基板130時，氣體控制裝置104可供應第一承載面氣孔108與第二承載面氣孔110不同的氣體量。舉例而言，氣體控制裝置104供給第一承載面氣孔108的氣體量較第二承載面氣孔110的氣體量大。在另一實施例中，氣體控制裝置104亦可供應第一承載面氣孔108與第二承載面氣孔110同樣流量的氣體。In an embodiment, when the first bearing surface air hole 108 and the second bearing surface air hole 110 are used to derive the gas to lift the substrate 130, the gas control device 104 can supply the first bearing surface air hole 108 differently from the second bearing surface air hole 110. The amount of gas. For example, the amount of gas supplied to the first bearing surface air hole 108 by the gas control device 104 is larger than the amount of gas of the second bearing surface air hole 110. In another embodiment, the gas control device 104 may also supply a gas having the same flow rate of the first bearing surface air hole 108 and the second bearing surface air hole 110.
在一示範例子中，第一氣體管路120之一端設於基板承載體102之第一區112的偏基板130進入的一邊，且第一承載面氣孔108在第一區112之偏基板130進入的一邊的排列密度較高，而第二氣體管路122之一端設於第二區114之中央處，且第二承載面氣孔110在第二區114的排列均勻。亦即，所有第一承載面氣孔108與第二承載面氣孔110可並非均勻排列在基板承載體102中。因此，所有第一承載面氣孔108在第一區112中的排氣分布不同於所有第二承載面氣孔110在第二區114中的排氣分布，也就是所有第一承載面氣孔108與第二承載面氣孔110在承載面106的排氣分布不均勻。於是，基板130在第一區112的部分受到第一承載面氣孔108抬升的高度會較在第二區 114的部分受到第二承載面氣孔110抬升的高度高。而且，愈接近基板承載體102之基板進入的一邊，基板130被抬升的高度愈高。如此一來，基板130可以具有小傾斜角的方式被抬起。此時，再加上基板130本身重量的影響，可將基板130推向一預定方向152，而使基板130朝此預定方向152移動。在本實施方式中，此預定方向152為朝向將基板130運離基板承載體102的基板運送裝置138的方向。In an exemplary embodiment, one end of the first gas line 120 is disposed on one side of the offset substrate 130 of the first region 112 of the substrate carrier 102, and the first bearing surface air hole 108 enters the substrate 130 of the first region 112. The arrangement density of one side of the second gas line 122 is set at the center of the second area 114, and the arrangement of the second bearing surface pores 110 in the second area 114 is uniform. That is, all of the first bearing surface air holes 108 and the second bearing surface air holes 110 may not be uniformly arranged in the substrate carrier 102. Therefore, the exhaust distribution of all the first bearing surface air holes 108 in the first region 112 is different from the distribution of the exhaust gases in the second region 114 of all the second bearing surface air holes 110, that is, all the first bearing surface air holes 108 and the first The exhaust of the two bearing surface air holes 110 on the bearing surface 106 is uneven. Thus, the portion of the substrate 130 that is lifted by the first bearing surface air hole 108 in the portion of the first region 112 is higher than the second region. The portion of 114 is elevated by the height of the second bearing surface air vent 110. Moreover, the closer to the side where the substrate of the substrate carrier 102 enters, the higher the height at which the substrate 130 is lifted. As such, the substrate 130 can be lifted in a manner with a small angle of inclination. At this time, in addition to the influence of the weight of the substrate 130 itself, the substrate 130 can be pushed toward a predetermined direction 152 to move the substrate 130 toward the predetermined direction 152. In the present embodiment, the predetermined direction 152 is a direction toward the substrate transport device 138 that transports the substrate 130 away from the substrate carrier 102.
在另一示範例子中，第一氣體管路120之一端與第二氣體管路122之一端分別設於基板承載體102之第一區112與第二區114的中央處，且第一承載面氣孔108與第二承載面氣孔110分別在第一區112和第二區114中均勻排列。此時，氣體控制裝置104可藉由供應較大之氣體量予第一氣體管路120，以及較小之氣體量予第二氣體管路122的方式，來達到使基板130在第一區112的部分受到第一承載面氣孔108抬升的高度較在第二區114的部分受到第二承載面氣孔110抬升的高度高的效果。In another exemplary embodiment, one end of the first gas line 120 and one end of the second gas line 122 are respectively disposed at the center of the first region 112 and the second region 114 of the substrate carrier 102, and the first bearing surface The air holes 108 and the second bearing surface air holes 110 are evenly arranged in the first region 112 and the second region 114, respectively. At this time, the gas control device 104 can achieve the substrate 130 in the first region 112 by supplying a larger amount of gas to the first gas line 120 and a smaller amount of gas to the second gas line 122. The portion that is lifted by the first bearing surface air hole 108 has a higher height than the portion of the second portion 114 that is lifted by the second bearing surface air hole 110.
當基板130之第二表面136抵觸在基板運送裝置138上時，基板運送裝置138即可將完成單面蝕刻之基板130運送至下一處理站。藉由調整第一承載面氣孔108與第二承載面氣孔110的導出氣體量，可將基板130自動載出基板承載體102之承載面106，因此可提升製程效率。When the second surface 136 of the substrate 130 is in contact with the substrate transport device 138, the substrate transport device 138 can transport the completed single-sided etched substrate 130 to the next processing station. By adjusting the amount of the derivatized gas of the first bearing surface air hole 108 and the second bearing surface air hole 110, the substrate 130 can be automatically carried out of the bearing surface 106 of the substrate carrier 102, thereby improving the process efficiency.
由上述之實施方式可知，運用本發明之濕式蝕刻方法與基板承載裝置之一優點為可有效防止蝕刻液溢流到基板之欲蝕刻表面的相對表面，而可避免蝕刻痕在此相對表面 上形成。因此，可確實達成基板之高品質的單面蝕刻。It can be seen from the above embodiments that one of the advantages of the wet etching method and the substrate carrying device of the present invention is that the etching liquid can be effectively prevented from overflowing to the opposite surface of the substrate to be etched, and the etching marks can be avoided on the opposite surface. Formed on. Therefore, high-quality single-sided etching of the substrate can be surely achieved.
由上述之實施方式可知，運用本發明之濕式蝕刻方法的另一優點為在進行蝕刻時，可提供個別或混合蝕刻液，因此可對不同蝕刻製程的整合進行細部且進一步的微調，故可增加蝕刻製程的彈性。It can be seen from the above embodiments that another advantage of the wet etching method of the present invention is that an individual or mixed etching liquid can be provided during etching, so that the integration of different etching processes can be finely and further fine-tuned. Increase the flexibility of the etching process.
由上述之實施方式可知，運用本發明之濕式蝕刻方法的又一優點為此方法可精確控制消耗之蝕刻劑的量，而可減少蝕刻劑的浪費。此外，運用此濕式蝕刻方法，可避免習知技術之蝕刻液交互汙染與濃度波動的問題。It is apparent from the above-described embodiments that another advantage of the wet etching method of the present invention is that the method can precisely control the amount of etchant consumed, and the waste of the etchant can be reduced. In addition, by using this wet etching method, the problem of cross-contamination and concentration fluctuation of the etching solution of the prior art can be avoided.
由上述之實施方式可知，本發明之再一優點為基板承載裝置之不同承載面氣孔可導出不同氣體量，而可將蝕刻後之基板推向基板運送裝置，因此可大幅提升蝕刻製程的效率。It can be seen from the above embodiments that another advantage of the present invention is that the different bearing surface pores of the substrate carrying device can derive different gas amounts, and the etched substrate can be pushed toward the substrate transport device, thereby greatly improving the efficiency of the etching process.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何在此技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described above by way of example, it is not intended to be construed as a limitation of the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧基板承載裝置100‧‧‧Substrate carrier
102‧‧‧基板承載體102‧‧‧Substrate carrier
104‧‧‧氣體控制裝置104‧‧‧ gas control device
106‧‧‧承載面106‧‧‧ bearing surface
108‧‧‧一承載面氣孔108‧‧‧ a bearing surface vent
110‧‧‧第二承載面氣孔110‧‧‧Second bearing surface vent
112‧‧‧第一區112‧‧‧First District
114‧‧‧第二區114‧‧‧Second District
116‧‧‧抗摩擦緩衝層116‧‧‧Anti-friction buffer layer
118‧‧‧非承載面氣孔118‧‧‧ Non-bearing surface vents
120‧‧‧第一氣體管路120‧‧‧First gas line
122‧‧‧第二氣體管路122‧‧‧Second gas pipeline
124‧‧‧第三氣體管路124‧‧‧ Third gas pipeline
126‧‧‧側面126‧‧‧ side
128‧‧‧表面128‧‧‧ surface
130‧‧‧基板130‧‧‧Substrate
132‧‧‧第一表面132‧‧‧ first surface
134‧‧‧第三表面134‧‧‧ third surface
136‧‧‧第二表面136‧‧‧ second surface
138‧‧‧基板運送裝置138‧‧‧Substrate transport device
140‧‧‧偵測器140‧‧‧Detector
142‧‧‧廢液排出裝置142‧‧‧Waste discharge device
144‧‧‧化學罩144‧‧‧chemical cover
146‧‧‧氣體噴射器146‧‧‧ gas injector
148‧‧‧蝕刻液噴射器148‧‧‧etching liquid ejector
150‧‧‧蝕刻液150‧‧‧etching solution
152‧‧‧預定方向152‧‧‧Predetermined direction
154‧‧‧反應室154‧‧‧Reaction room
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂，所附圖式之說明如下：第1圖係繪示依照本發明之一實施方式的一種基板承載裝置的剖面示意圖。The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; schematic diagram.
第2圖係繪示依照本發明之一實施方式的一種基板承 載裝置的上視示意圖。2 is a perspective view of a substrate according to an embodiment of the present invention. A top view of the carrier.
第3圖至第5圖係繪示依照本發明之一實施方式的一種濕式蝕刻方法的流程圖。3 to 5 are flow charts showing a wet etching method in accordance with an embodiment of the present invention.
100‧‧‧基板承載裝置100‧‧‧Substrate carrier
102‧‧‧基板承載體102‧‧‧Substrate carrier
104‧‧‧氣體控制裝置104‧‧‧ gas control device
106‧‧‧承載面106‧‧‧ bearing surface
108‧‧‧一承載面氣孔108‧‧‧ a bearing surface vent
110‧‧‧第二承載面氣孔110‧‧‧Second bearing surface vent
112‧‧‧第一區112‧‧‧First District
114‧‧‧第二區114‧‧‧Second District
116‧‧‧抗摩擦緩衝層116‧‧‧Anti-friction buffer layer
118‧‧‧非承載面氣孔118‧‧‧ Non-bearing surface vents
120‧‧‧第一氣體管路120‧‧‧First gas line
122‧‧‧第二氣體管路122‧‧‧Second gas pipeline
124‧‧‧第三氣體管路124‧‧‧ Third gas pipeline
126‧‧‧側面126‧‧‧ side
128‧‧‧表面128‧‧‧ surface
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101140116A TWI463560B (en) | 2012-10-30 | 2012-10-30 | Wet etching method and substrate carrier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101140116A TWI463560B (en) | 2012-10-30 | 2012-10-30 | Wet etching method and substrate carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201417164A TW201417164A (en) | 2014-05-01 |
| TWI463560B true TWI463560B (en) | 2014-12-01 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| TW101140116A TWI463560B (en) | 2012-10-30 | 2012-10-30 | Wet etching method and substrate carrier |
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| Country | Link |
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| TW (1) | TWI463560B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611490B (en) * | 2017-01-20 | 2018-01-11 | Wet etching processing system and method for detecting etch rate change |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112349583A (en) * | 2020-10-27 | 2021-02-09 | 西安奕斯伟硅片技术有限公司 | Silicon wafer etching method, DOSD detection method and silicon wafer etching device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201140737A (en) * | 2010-01-12 | 2011-11-16 | Semes Co Ltd | Apparatus for processing a substrate |
| TW201207928A (en) * | 2010-08-10 | 2012-02-16 | Rena Gmbh | Process and apparatus for texturizing a flat semiconductor substrate |
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2012
- 2012-10-30 TW TW101140116A patent/TWI463560B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201140737A (en) * | 2010-01-12 | 2011-11-16 | Semes Co Ltd | Apparatus for processing a substrate |
| TW201207928A (en) * | 2010-08-10 | 2012-02-16 | Rena Gmbh | Process and apparatus for texturizing a flat semiconductor substrate |
Non-Patent Citations (1)
| Title |
|---|
| TWＭ288004 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611490B (en) * | 2017-01-20 | 2018-01-11 | Wet etching processing system and method for detecting etch rate change |
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| TW201417164A (en) | 2014-05-01 |
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