TWI462341B - Method for packaging light emitting diode - Google Patents
Method for packaging light emitting diode Download PDFInfo
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- TWI462341B TWI462341B TW099137731A TW99137731A TWI462341B TW I462341 B TWI462341 B TW I462341B TW 099137731 A TW099137731 A TW 099137731A TW 99137731 A TW99137731 A TW 99137731A TW I462341 B TWI462341 B TW I462341B
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Description
本發明涉及一種發光二極體封裝方法。 The invention relates to a light emitting diode packaging method.
與傳統光源相比，發光二極體具有無汞、體積小、光學特性佳等優點。隨著發光二極體發光效率的不斷提升，越來越多的發光二極體被用作光源。 Compared with the conventional light source, the light-emitting diode has the advantages of no mercury, small volume, and good optical characteristics. As the luminous efficiency of light-emitting diodes continues to increase, more and more light-emitting diodes are used as light sources.
常見的發光二極體封裝過程中，先提供一具有電極結構的封裝基板，然後在封裝基板上設置發光二極體晶粒，接著藉由打金線連接發光二極體晶粒正、負電極與封裝基板的電極結構，再藉由壓模技術在發光二極體晶粒上方形成螢光粉層及覆蓋層，以覆蓋發光二極體晶粒。然而，上述的壓模制程中的壓力容易損壞發光二極體晶粒及金線。 In a common LED package process, a package substrate having an electrode structure is provided, and then a light-emitting diode die is disposed on the package substrate, and then the positive and negative electrodes of the light-emitting diode die are connected by a gold wire. And the electrode structure of the package substrate, and then forming a phosphor powder layer and a cap layer on the light-emitting diode die by a stamper technique to cover the light-emitting diode crystal grains. However, the pressure in the above-described compression molding process easily damages the light-emitting diode crystal grains and gold wires.
有鑒於此，有必要提供一種能夠避免封裝過程中損壞晶粒及金線的發光二極體封裝方法。 In view of this, it is necessary to provide a light emitting diode packaging method capable of avoiding damage to the crystal grains and gold wires during the packaging process.
以下將以實施例說明一種能夠避免封裝過程中損壞晶粒及金線的發光二極體封裝方法。 Hereinafter, a light emitting diode packaging method capable of avoiding damage to a crystal grain and a gold wire during a packaging process will be described by way of embodiments.
一種發光二極體封裝方法，包括步驟：(a)提供一模具及一封裝基板，該模具包括相互隔離的第一、第 二收容空間，該封裝基板包括相互隔離的晶粒部及電極部，該電極部包括電極結構，第一收容空間收容晶粒部，第二收容空間收容電極部；(b)設置發光二極體晶粒在封裝基板的晶粒部上，利用導線將發光二極體晶粒的正、負極分別與封裝基板的電極結構相連接；(c)向第一收容空間內注入光波長轉換材料，以使光波長轉換材料覆蓋發光二極體晶粒；(d)連通第一、第二收容空間，並向連通後的第一、第二收容空間內注入第一透光材料以覆蓋波長轉換材料、導線以及電極部；(e)去除模具。 A method for packaging a light emitting diode, comprising the steps of: (a) providing a mold and a package substrate, the mold comprising first and second isolated from each other In the second receiving space, the package substrate includes a die portion and an electrode portion that are separated from each other, the electrode portion includes an electrode structure, the first receiving space receives the die portion, the second receiving space receives the electrode portion, and (b) the light emitting diode is disposed The die is connected to the electrode structure of the package substrate by the wire on the die portion of the package substrate, and (c) injecting the light wavelength conversion material into the first receiving space, The light wavelength conversion material is disposed to cover the light emitting diode die; (d) communicating the first and second receiving spaces, and injecting the first light transmissive material into the connected first and second receiving spaces to cover the wavelength converting material, a wire and an electrode portion; (e) removing the mold.
相較於先前技術，所述發光二極體封裝方法無需採用壓模制程製作螢光粉層及覆蓋層，能夠達到避免在封裝過程中損壞晶粒及金線、進而提高良率的效果。 Compared with the prior art, the LED package method does not need to use a stamping process to form a phosphor layer and a cover layer, thereby achieving the effect of avoiding damage to the crystal grains and gold wires during the packaging process, thereby improving the yield.
10‧‧‧模具 10‧‧‧Mold
11‧‧‧底板 11‧‧‧floor
12‧‧‧圍牆 12‧‧‧Wall
13‧‧‧擋牆 13‧‧‧Retaining wall
100‧‧‧收容腔 100‧‧‧ containment chamber
110‧‧‧第一承載部 110‧‧‧First load bearing department
112‧‧‧第二承載部 112‧‧‧Second load bearing department
114、200‧‧‧環狀貫孔 114, 200‧‧‧ annular through holes
130‧‧‧內側壁 130‧‧‧ inner side wall
132‧‧‧外側壁 132‧‧‧Outer side wall
1001‧‧‧第一收容空間 1001‧‧‧First containment space
1002‧‧‧第二收容空間 1002‧‧‧Second containment space
20‧‧‧封裝基板 20‧‧‧Package substrate
21‧‧‧晶粒部 21‧‧‧Grade Department
22‧‧‧電極部 22‧‧‧Electrode
220‧‧‧電極結構 220‧‧‧Electrode structure
222‧‧‧外接電極 222‧‧‧External electrode
30‧‧‧發光二極體晶粒 30‧‧‧Light-emitting diode grains
40‧‧‧導線 40‧‧‧ wire
50‧‧‧光波長轉換材料 50‧‧‧Light wavelength conversion material
60‧‧‧第一透光材料 60‧‧‧First light transmissive material
70‧‧‧第二透光材料 70‧‧‧Second light-transmitting material
圖1係本發明第一實施例提供的發光二極體封裝方法流程圖。 FIG. 1 is a flow chart of a method for packaging a light emitting diode according to a first embodiment of the present invention.
圖2係本發明第一實施例提供的模具的拆解狀態剖視圖。 Fig. 2 is a cross-sectional view showing the disassembled state of the mold according to the first embodiment of the present invention.
圖3係本發明第一實施例提供的模具的組合狀態俯視圖。 Fig. 3 is a plan view showing a combined state of a mold according to a first embodiment of the present invention.
圖4係本發明第一實施例提供的模具的組合狀態剖視圖。 Fig. 4 is a cross-sectional view showing a combined state of a mold according to a first embodiment of the present invention.
圖5係本發明第一實施例提供的封裝基板的剖視圖。 FIG. 5 is a cross-sectional view of a package substrate according to a first embodiment of the present invention.
圖6係本發明第一實施例將封裝基板置入模具的示意圖。 Figure 6 is a schematic view showing the first embodiment of the present invention in which a package substrate is placed in a mold.
圖7係本發明第一實施例將發光二極體晶粒固定在封裝基板上的 示意圖。 7 is a view showing a first embodiment of the present invention for fixing a light emitting diode die on a package substrate; schematic diagram.
圖8係本發明第一實施例向收容空間注入光波長轉換材料的示意圖。 Fig. 8 is a schematic view showing the injection of a light wavelength conversion material into a housing space according to the first embodiment of the present invention.
圖9係本發明第一實施例將收容空間內擋牆退出的示意圖。 Figure 9 is a schematic view showing the first embodiment of the present invention for withdrawing the retaining wall in the accommodating space.
圖10係本發明第一實施例向收容空間內注入透光材料的示意圖。 Figure 10 is a schematic view showing the injection of a light-transmitting material into a housing space according to the first embodiment of the present invention.
圖11係本發明第一實施例分離模具與封裝基板的示意圖。 Figure 11 is a schematic view showing a separation mold and a package substrate in the first embodiment of the present invention.
圖12係本發明第二實施例提供的發光二極體封裝方法流程圖。 FIG. 12 is a flow chart of a method for packaging a light emitting diode according to a second embodiment of the present invention.
圖13A係本發明第三實施例提供的發光二極體封裝方法流程圖。 FIG. 13 is a flow chart of a method for packaging a light emitting diode according to a third embodiment of the present invention.
圖13B~圖13E係本發明第三實施例提供的發光二極體封裝方法示意圖。 13B to FIG. 13E are schematic diagrams showing a method of packaging a light emitting diode according to a third embodiment of the present invention.
圖14係本發明第四實施例提供的發光二極體封裝方法流程圖。 FIG. 14 is a flow chart of a method for packaging a light emitting diode according to a fourth embodiment of the present invention.
圖15係本發明改進實施例提供的在封裝基板上形成貼片式電極結構的示意圖。 15 is a schematic view showing the formation of a patch electrode structure on a package substrate according to a modified embodiment of the present invention.
圖16A~圖16C係本發明第五實施例提供的發光二極體封裝方法示意圖。 16A to FIG. 16C are schematic diagrams showing a method of packaging a light emitting diode according to a fifth embodiment of the present invention.
圖16D係依本發明第五實施例的封裝方法製作的發光二極體結構示意圖。 16D is a schematic view showing the structure of a light emitting diode fabricated by the packaging method according to the fifth embodiment of the present invention.
請參見圖1，本發明實施例提供的發光二級管制作方法包括以下步驟。 Referring to FIG. 1, a method for fabricating a light-emitting diode according to an embodiment of the present invention includes the following steps.
第一步，提供一模具及一封裝基板，該模具包括相互隔離的第一 、第二收容空間，該封裝基板包括相互隔離的晶粒部及電極部，該電極部包括電極結構，第一收容空間收容晶粒部，第二收容空間收容電極部。 a first step of providing a mold and a package substrate, the mold including the first isolated from each other The second receiving space includes a die portion and an electrode portion that are separated from each other. The electrode portion includes an electrode structure. The first receiving space accommodates the die portion, and the second receiving space houses the electrode portion.
請一併參見圖2及圖3，本實施例提供的模具10包括底板11、圍牆12及一擋牆13。 Referring to FIG. 2 and FIG. 3 together, the mold 10 provided in this embodiment includes a bottom plate 11, a wall 12 and a retaining wall 13.
該底板11的形狀可為圓形。矩形等，且該底板11的尺寸大於待封裝發光二極體晶粒的尺寸，圖2僅示出底板11的剖面結構。本實施例中，該底板11呈矩形平板狀。該底板進一步包括第一承載部110、第二承載部112以及環狀貫孔114。該第二承載部112環繞該第一承載部110分佈，從而該第一承載部110位於第二承載部112中心。該環狀貫孔114位於第一承載部110與第二承載部112之間，從而環狀貫孔114將第一承載部110與第二承載部112相互分離。 The bottom plate 11 may have a circular shape. A rectangle or the like, and the size of the bottom plate 11 is larger than the size of the light-emitting diode die to be packaged, and FIG. 2 only shows the cross-sectional structure of the bottom plate 11. In this embodiment, the bottom plate 11 has a rectangular flat plate shape. The bottom plate further includes a first bearing portion 110, a second bearing portion 112, and an annular through hole 114. The second carrier portion 112 is distributed around the first carrier portion 110 such that the first carrier portion 110 is located at the center of the second carrier portion 112. The annular through hole 114 is located between the first carrying portion 110 and the second carrying portion 112 such that the annular through hole 114 separates the first carrying portion 110 from the second carrying portion 112.
該圍牆12位於底板11的四周邊緣處，並向底板11的一側凸起，從而與底板11圍成所述收容腔100。 The wall 12 is located at the peripheral edge of the bottom plate 11 and protrudes toward one side of the bottom plate 11 to enclose the receiving cavity 100 with the bottom plate 11.
該擋牆13的形狀與底板11上的環狀貫孔114相同，即該擋牆13也呈環狀。該擋牆13的尺寸(如厚度、口徑等)與環狀貫孔114相同或比環狀貫孔114略小，從而該擋牆13可組裝入該環狀貫孔114內。並且，該擋牆13能夠進一步貫穿過環狀貫孔114而伸入收容腔100。參見圖4，擋牆13經由環狀貫孔114伸入收容腔100後將收容腔100分割為相互隔離的第一收容空間1001、第二收容空間1002。其中，擋牆13的內側壁130與底板11的第一承載部110圍成所述第一收容空間1001，而擋牆13的外側壁132與底板11的第二承載部112以及圍牆12共同圍成所述第二收容空間1002。 The shape of the retaining wall 13 is the same as that of the annular through hole 114 in the bottom plate 11, that is, the retaining wall 13 is also annular. The size (such as thickness, caliber, etc.) of the retaining wall 13 is the same as or slightly smaller than the annular through hole 114, so that the retaining wall 13 can be assembled into the annular through hole 114. Moreover, the retaining wall 13 can further extend through the annular through hole 114 and into the receiving cavity 100. Referring to FIG. 4 , the retaining wall 13 extends into the receiving cavity 100 through the annular through hole 114 , and then divides the receiving cavity 100 into the first receiving space 1001 and the second receiving space 1002 that are separated from each other. The inner side wall 130 of the retaining wall 13 and the first receiving portion 110 of the bottom plate 11 enclose the first receiving space 1001, and the outer side wall 132 of the retaining wall 13 is surrounded by the second carrying portion 112 of the bottom plate 11 and the surrounding wall 12. The second receiving space 1002 is formed.
請參見圖5，本實施例提供的封裝基板20包括晶粒部21以及電極部22。 Referring to FIG. 5 , the package substrate 20 provided in this embodiment includes a die portion 21 and an electrode portion 22 .
該晶粒部21用於承載待封裝的發光二極體晶粒，因此該晶粒部21的尺寸等於或者大於所述待封裝發光二極體晶粒。 The die portion 21 is configured to carry the light emitting diode die to be packaged, and thus the die portion 21 has a size equal to or larger than the light emitting diode die to be packaged.
該電極部22環繞晶粒部21分佈。該電極部22上形成有電極結構220，該電極結構220用於與後續待封裝的發光二極體晶粒的正、負極相連，以從外界獲取電能並將電能提供給該發光二極體晶粒。 The electrode portion 22 is distributed around the crystal grain portion 21. An electrode structure 220 is formed on the electrode portion 22 for connecting with the positive and negative electrodes of the light-emitting diode chip to be packaged later to obtain electric energy from the outside and supply the electric energy to the light-emitting diode crystal. grain.
該晶粒部21與電極部22之間形成有環狀貫孔200，該環狀貫孔200將晶粒部21與電極部22分割成相互分離的兩個部分，並且該環狀貫孔200與環狀貫孔114的形狀和尺寸均相同。 An annular through hole 200 is formed between the die portion 21 and the electrode portion 22, and the annular through hole 200 divides the die portion 21 and the electrode portion 22 into two portions separated from each other, and the annular through hole 200 The shape and size of the annular through hole 114 are the same.
參見圖6，將封裝基板20設置在模具10中時，該晶粒部21被收容在第一收容空間1001內並與底板11的第一承載部110接觸；電極部22被收容在第二收容空間1002內並與底板11的第二承載部112接觸；該封裝基板20的環狀貫孔200與模具10的環狀貫孔114相互正對並貫通，擋牆13貫穿過環狀貫孔114、200並將環狀貫孔114、200填滿。 Referring to FIG. 6 , when the package substrate 20 is disposed in the mold 10 , the die portion 21 is received in the first receiving space 1001 and is in contact with the first bearing portion 110 of the bottom plate 11; the electrode portion 22 is received in the second receiving portion. The space 1002 is in contact with the second bearing portion 112 of the bottom plate 11; the annular through hole 200 of the package substrate 20 and the annular through hole 114 of the mold 10 face each other and penetrate, and the retaining wall 13 extends through the annular through hole 114. , 200 and fill the annular through holes 114, 200.
第二步，設置發光二極體晶粒在封裝基板的晶粒部上，利用導線將發光二極體晶粒的正、負極分別與封裝基板的電極結構相連接。 In the second step, the light emitting diode die is disposed on the die portion of the package substrate, and the positive and negative electrodes of the light emitting diode die are respectively connected to the electrode structure of the package substrate by using the wire.
參見圖7，本步驟將待封裝的發光二極體晶粒30設置在第一收容空間1001內、封裝基板20的晶粒部21上，再藉由打線連接(Wire Bonding)將發光二極體晶粒30的正、負極分別與第二收容空間 1002內、封裝基板20的電極結構220藉由導線40相連接。本實施例中，所述導線採用金線。 Referring to FIG. 7, in this step, the LED die 30 to be packaged is disposed in the first receiving space 1001, on the die portion 21 of the package substrate 20, and then the LED is connected by wire bonding. The positive and negative poles of the die 30 and the second receiving space respectively In 1002, the electrode structure 220 of the package substrate 20 is connected by wires 40. In this embodiment, the wire is made of gold wire.
第三步，向第一收容空間內注入光波長轉換材料，以使光波長轉換材料覆蓋發光二極體晶粒。 In the third step, the light wavelength conversion material is injected into the first receiving space to cover the light emitting diode grains.
參見圖8，本步驟向第一收容空間1001內注入液態的光波長轉換材料50，繼而固化該光波長轉換材料50。光波長轉換材料50固化後，可覆蓋導線40與發光二極體晶粒30電極的連接處，從而在進行光波長轉換的同時還可起到強化導線40連接強度的作用。本實施例中，所述光波長轉換材料50為螢光粉，該螢光粉的材質可根據不同光波長產品的需求而適當調整。 Referring to FIG. 8, this step injects a liquid light wavelength conversion material 50 into the first receiving space 1001, and then solidifies the light wavelength converting material 50. After the light wavelength conversion material 50 is cured, the connection between the wire 40 and the electrode of the light-emitting diode die 30 can be covered, thereby further enhancing the connection strength of the wire 40 while performing wavelength conversion of the light. In this embodiment, the optical wavelength conversion material 50 is a fluorescent powder, and the material of the fluorescent powder can be appropriately adjusted according to the requirements of products of different optical wavelengths.
此步驟中，在注入光波長轉換材料50之前，先根據擋牆13的內側壁130與發光二極體晶粒之間的距離適當調整擋牆13頂部134距離封裝基板晶粒部21的高度，然後將第一收容空間1001內注滿光波長轉換材料50，即可更精確地控制後續形成的光波長轉換材料50的厚度、均勻度，滿足更精確的光波長、色溫要求，進而達到理想的混光效果。 In this step, before the light wavelength conversion material 50 is injected, the height of the top portion 134 of the retaining wall 13 from the package substrate die portion 21 is appropriately adjusted according to the distance between the inner sidewall 130 of the retaining wall 13 and the light emitting diode die. Then, the first accommodating space 1001 is filled with the light wavelength conversion material 50, so that the thickness and uniformity of the subsequently formed light wavelength conversion material 50 can be more precisely controlled, and the more precise optical wavelength and color temperature requirements can be satisfied, thereby achieving an ideal Mixed light effect.
需要說明的是，該第一收容空間1001並非必須被注滿光波長轉換材料50，為防止光波長轉換材料50造成溢出，通常第一收容空間1001內會預留部分未被光波長轉換材料50填滿的空間。 It should be noted that the first accommodating space 1001 does not have to be filled with the light wavelength conversion material 50. In order to prevent the light wavelength conversion material 50 from overflowing, a portion of the first accommodating space 1001 is not reserved for the optical wavelength conversion material 50. Fill the space.
第四步，連通第一、第二收容空間，並向連通後的第一、第二收容空間內注入第一透光材料以覆蓋波長轉換材料、導線以及電極部。 In the fourth step, the first and second receiving spaces are connected, and the first light transmissive material is injected into the connected first and second receiving spaces to cover the wavelength converting material, the wires and the electrode portions.
參見圖9及圖10，此步驟將伸入收容腔100的擋牆13從收容腔100 中退出，使擋牆13的頂部134與第一承載部110、第二承載部112的上表面持平。從而，圖8中所示的第一收容空間1001未被光波長轉換材料50填滿的空間與第二收容空間1002相連通。 Referring to FIG. 9 and FIG. 10, this step will extend into the retaining wall 13 of the receiving cavity 100 from the receiving cavity 100. The middle exit 134 is such that the top 134 of the retaining wall 13 is flush with the upper surfaces of the first carrying portion 110 and the second carrying portion 112. Therefore, the space in which the first accommodating space 1001 shown in FIG. 8 is not filled by the light wavelength conversion material 50 is in communication with the second accommodating space 1002.
第一透光材料60可為樹脂或玻璃，將該第一透光材料60加熱至熔融狀態再注入連通後的第一收容空間1001、第二收容空間1002內，從而覆蓋導線40、光波長轉換材料50以及電極部22。該第一透光材料60在不影響光傳播的前提下，對導線40、光波長轉換材料50以及電極部22進行保護。 The first light transmissive material 60 may be a resin or a glass, and the first light transmissive material 60 is heated to a molten state and injected into the first receiving space 1001 and the second receiving space 1002, thereby covering the wire 40 and converting the wavelength of the light. Material 50 and electrode portion 22. The first light transmissive material 60 protects the wire 40, the light wavelength conversion material 50, and the electrode portion 22 without affecting light propagation.
第五步，去除模具。 In the fifth step, the mold is removed.
參見圖11，將模具10與封裝基板20相互分離，也即分離模具10的第一承載部110與封裝基板20的晶粒部21、第二承載部112與封裝基板20的電極部22相互分離，即可獲得封裝完畢的發光二級光晶片。 Referring to FIG. 11, the mold 10 and the package substrate 20 are separated from each other, that is, the first carrier portion 110 of the separation mold 10 and the die portion 21 of the package substrate 20, the second carrier portion 112, and the electrode portion 22 of the package substrate 20 are separated from each other. The packaged light-emitting secondary optical wafer can be obtained.
相對於現有技術，所述發光二極體封裝方法無需採用壓模制程製作螢光粉層及覆蓋層，能夠達到避免在封裝過程中損壞晶粒及金線、進而提高良率的效果。 Compared with the prior art, the LED package method does not need to use a stamping process to form a phosphor layer and a cover layer, thereby achieving the effect of avoiding damage to the crystal grains and gold wires during the packaging process, thereby improving the yield.
參見圖12，本發明第二實施例還提供一種發光二極體封裝方法，其包括步驟： Referring to FIG. 12, a second embodiment of the present invention further provides a method for packaging a light emitting diode, comprising the steps of:
第一步，提供一模具及一封裝基板，該模具包括相互隔離的第一、第二收容空間，該封裝基板包括相互隔離的晶粒部及電極部，該電極部包括電極結構，第一收容空間收容晶粒部，第二收容空間收容電極部，該封裝基板經由焊料與模具第一、第二收容空間底部相結合而固定； 本步驟在第一實施例將封裝基板20置入模具10之前，先在模具10的第一收容空間1001底部的第一承載部110上、第二收容空間1002底部的第二承載部112上塗覆低熔點焊料，再將封裝基板20的晶粒部21與電極部22分別置入第一收容空間1001、第二收容空間1002內，再加熱熔化該焊料繼而冷卻焊料，以藉由焊料將封裝基板20的晶粒部21與電極部22分別固定在第一承載部110、第二承載部112上。 The first step is to provide a mold and a package substrate, the mold includes first and second receiving spaces separated from each other, the package substrate includes a die portion and an electrode portion separated from each other, the electrode portion includes an electrode structure, and the first receiving portion The space accommodates the die portion, and the second receiving space houses the electrode portion, and the package substrate is fixed by the solder in combination with the bottoms of the first and second receiving spaces of the mold; This step is applied to the first carrier portion 110 at the bottom of the first receiving space 1001 of the mold 10 and the second carrier portion 112 at the bottom of the second receiving space 1002 before the package substrate 20 is placed in the mold 10 in the first embodiment. The low melting point solder is placed in the first receiving space 1001 and the second receiving space 1002 of the package portion 20, and then the solder is heated and melted to cool the solder to encapsulate the substrate by solder. The die portion 21 and the electrode portion 22 of the 20 are fixed to the first carrier portion 110 and the second carrier portion 112, respectively.
第二步，設置發光二極體晶粒在封裝基板的晶粒部上，利用導線將發光二極體晶粒的正、負極分別與封裝基板的電極結構相連接；第三步，向第一收容空間內注入光波長轉換材料，以使光波長轉換材料覆蓋發光二極體晶粒；第四步，連通第一、第二收容空間，並向連通後的第一、第二收容空間內注入第一透光材料以覆蓋波長轉換材料、導線、以及電極部；第五步，加熱焊料，去除模具。 In the second step, the illuminating diode die is disposed on the die portion of the package substrate, and the positive and negative electrodes of the luminescent diode die are respectively connected to the electrode structure of the package substrate by using the wire; The light wavelength conversion material is injected into the accommodating space to cover the light emitting diode dies; the fourth step is to connect the first and second accommodating spaces, and inject into the connected first and second accommodating spaces. The first light transmissive material covers the wavelength conversion material, the wires, and the electrode portion; in the fifth step, the solder is heated to remove the mold.
去除模具10時，可先加熱第一承載部110、第二承載部112的底部使焊料熔化，在焊料熔化時即可將封裝基板20的晶粒部21、電極部22與模具10的第一承載部110、第二承載部112分離。 When the mold 10 is removed, the bottom of the first carrier portion 110 and the second carrier portion 112 may be heated to melt the solder, and the die portion 21 of the package substrate 20, the electrode portion 22, and the first portion of the mold 10 may be melted when the solder is melted. The carrying portion 110 and the second carrying portion 112 are separated.
本發明第二實施例的第二步~第五步的操作細節可參照第一實施例各相應步驟實施，並且本發明第二實施例採用低熔點焊料對封裝基板20達成固定的作用，而在後續脫模工藝中直接藉由加熱模具10即可分離模具10與封裝基板20，該種封裝基板固定方法具有 方便、快捷的效果。 The operation details of the second to fifth steps of the second embodiment of the present invention can be implemented with reference to the respective steps of the first embodiment, and the second embodiment of the present invention uses the low melting point solder to achieve a fixed effect on the package substrate 20, and In the subsequent demolding process, the mold 10 and the package substrate 20 can be separated by directly heating the mold 10, and the package substrate fixing method has Convenient and fast results.
參見圖13A，本發明第三實施例還提供一種發光二極體封裝方法，其包括步驟：第一步，提供一模具及一封裝基板，該模具包括相互隔離的第一、第二收容空間，該封裝基板包括相互隔離的晶粒部及電極部，該電極部包括電極結構，第一收容空間收容晶粒部，第二收容空間收容電極部；第二步，設置發光二極體晶粒在封裝基板的晶粒部上，利用導線將發光二極體晶粒的正、負極分別與封裝基板的電極結構相連接；第三步，向第一收容空間內注入光波長轉換材料，以使光波長轉換材料覆蓋發光二極體晶粒；第四步，向第二收容空間注入第二透光材料，以使第二透光材料覆蓋封裝基板的電極結構；第五步，連通第一、第二收容空間，並向連通後的第一、第二收容空間內注入第一透光材料以覆蓋波長轉換材料、第二透光材料及導線；第六步，去除模具。 Referring to FIG. 13A, a third embodiment of the present invention further provides a method for packaging a light emitting diode, comprising the steps of: providing a mold and a package substrate, wherein the mold includes first and second receiving spaces separated from each other; The package substrate includes a die portion and an electrode portion that are separated from each other. The electrode portion includes an electrode structure. The first receiving space accommodates the die portion, and the second receiving space houses the electrode portion. In the second step, the light emitting diode die is disposed. On the die portion of the package substrate, the positive and negative electrodes of the light emitting diode die are respectively connected to the electrode structure of the package substrate by using a wire; and in the third step, the light wavelength conversion material is injected into the first receiving space to make the light The wavelength conversion material covers the light emitting diode die; in the fourth step, the second light transmissive material is injected into the second receiving space, so that the second light transmissive material covers the electrode structure of the package substrate; The second receiving space is filled with the first light transmissive material to cover the wavelength converting material, the second light transmissive material and the wire; and the sixth step is to remove the mold.
參見圖13B~圖13E，本第三實施例提供的方法，其第四步在注入第一透光材料之前先向第二收容空間注入第二透光材料70，以使第二透光材料70覆蓋封裝基板20的電極結構220，從而可額外加強導線40與封裝基板電極結構220的連接強度。 Referring to FIG. 13B to FIG. 13E , in the fourth embodiment, the fourth step of injecting the second light transmissive material 70 into the second receiving space before injecting the first light transmissive material, so that the second light transmissive material 70 is The electrode structure 220 of the package substrate 20 is covered, so that the connection strength of the wire 40 to the package substrate electrode structure 220 can be additionally enhanced.
本發明第三實施例除第四步外的其他各步驟操作細節可參照第一實施例各相應步驟實施。 The details of the operation of each step other than the fourth step of the third embodiment of the present invention can be implemented with reference to the respective steps of the first embodiment.
參見圖14，本發明第四實施例還提供一種發光二極體封裝方法，其包括步驟： Referring to FIG. 14, a fourth embodiment of the present invention further provides a method for packaging a light emitting diode, comprising the steps of:
第一步，提供一模具及一封裝基板，該模具包括相互隔離的第一、第二收容空間，該封裝基板包括相互隔離的晶粒部及電極部，該電極部包括電極結構，第一收容空間收容晶粒部，第二收容空間收容電極部，該封裝基板經由焊料與模具第一、第二收容空間底部相結合而固定；該步驟的操作細節可參照本發明第二實施例的第一步實施。 The first step is to provide a mold and a package substrate, the mold includes first and second receiving spaces separated from each other, the package substrate includes a die portion and an electrode portion separated from each other, the electrode portion includes an electrode structure, and the first receiving portion The space accommodating the die portion, the second receiving space accommodating the electrode portion, and the package substrate is fixed by the solder in combination with the bottoms of the first and second receiving spaces of the mold; the operation details of the step may refer to the first embodiment of the second embodiment of the present invention. Step by step.
第二步，設置發光二極體晶粒在封裝基板的晶粒部上，利用導線將發光二極體晶粒的正、負極分別與封裝基板的電極結構相連接；第三步，向第一收容空間內注入光波長轉換材料，以使光波長轉換材料覆蓋發光二極體晶粒；第四步，向第二收容空間注入第二透光材料，以使第二透光材料覆蓋封裝基板的電極結構；第五步，連通第一、第二收容空間，並向連通後的第一、第二收容空間內注入第一透光材料以覆蓋波長轉換材料、第二透光材料及導線；第六步，加熱焊料，去除模具。 In the second step, the illuminating diode die is disposed on the die portion of the package substrate, and the positive and negative electrodes of the luminescent diode die are respectively connected to the electrode structure of the package substrate by using the wire; Injecting a light wavelength conversion material into the receiving space to cover the light emitting diode die; and in the fourth step, injecting the second light transmissive material into the second receiving space, so that the second light transmissive material covers the package substrate The electrode structure; the fifth step, connecting the first and second receiving spaces, and injecting the first light transmissive material into the connected first and second receiving spaces to cover the wavelength converting material, the second light transmitting material and the wire; Six steps, heating the solder and removing the mold.
第二步~第六步的操作細節與本發明第三實施例的相應步驟相同 。 The operation details of the second to sixth steps are the same as the corresponding steps of the third embodiment of the present invention. .
本發明第四實施例提供的發光二極體封裝方法，能夠兼具第二、三實施例的優點。 The LED package method according to the fourth embodiment of the present invention can combine the advantages of the second and third embodiments.
需要說明的是，在本發明第一、第二、第三、第四實施例提供的發光二極體封裝方法中，去除模具10之後，還可再在封裝基板電極部22的未形成有第一透光材料60的一側形成與封裝基板電極結構220電連接的外接電極222。如圖15所示，該外接電極222可延伸至封裝基板20的側面，進而與電極結構220相連接，從而使得封裝後得到的發光二極體晶片適用於表面貼裝工藝(SMT，Surface Mounting Technology)。 It should be noted that, in the LED package method provided by the first, second, third, and fourth embodiments of the present invention, after the mold 10 is removed, the package substrate electrode portion 22 may not be formed. One side of a light transmissive material 60 forms an external electrode 222 that is electrically connected to the package substrate electrode structure 220. As shown in FIG. 15 , the external electrode 222 can extend to the side of the package substrate 20 and be connected to the electrode structure 220 , so that the packaged LED chip is suitable for the surface mount process (SMT, Surface Mounting Technology). ).
參見圖16A~圖16C，本發明第五實施例還進一步提供一種具有強化電極結構的發光二極體封裝方法，該方法與第一實施例提供的方法步驟大體相同，其區別在於，在第四步連通第一、第二收容空間時，該擋牆13的頂部134與封裝基板20的上表面持平，然後再注入第一透光材料60。 Referring to FIG. 16A to FIG. 16C , a fifth embodiment of the present invention further provides a method for packaging a light emitting diode having a reinforced electrode structure, which is substantially the same as the method steps provided by the first embodiment, and the difference is that in the fourth When the first and second receiving spaces are connected, the top 134 of the retaining wall 13 is flush with the upper surface of the package substrate 20, and then the first light transmissive material 60 is injected.
以此方法，封裝基板20的環形貫孔200未被第一透光材料60填充，繼而可在封裝基板20未形成有第一透光材料60的一側形成伸入環形貫孔200的外接電極222，該外接電極222連接至晶粒部21的底部、電極部22、並延伸至封裝基板20的側面以與電極結構220相連接，如圖16D所示。該種外接電極222的結構可以進一步加強發光二極體封裝的結構強度。 In this way, the annular through hole 200 of the package substrate 20 is not filled by the first light transmissive material 60, and then the external electrode extending into the annular through hole 200 can be formed on the side of the package substrate 20 where the first light transmissive material 60 is not formed. 222, the external electrode 222 is connected to the bottom of the die portion 21, the electrode portion 22, and extends to the side of the package substrate 20 to be connected to the electrode structure 220, as shown in FIG. 16D. The structure of the external electrode 222 can further enhance the structural strength of the LED package.
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，舉凡熟悉本案技藝之人 士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之申請專利範圍內。 In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. However, the above is only a preferred embodiment of the present invention, and those skilled in the art will be familiar with the present invention. Equivalent modifications or variations made in accordance with the spirit of the invention are intended to be included within the scope of the following claims.
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| US5019892A (en) * | 1988-02-18 | 1991-05-28 | Amp Incorporated | Chip carrier with accumulator |
| US5998878A (en) * | 1995-07-13 | 1999-12-07 | Eastman Kodak Company | Image sensor assembly and packaging method |
| US6399418B1 (en) * | 2001-07-26 | 2002-06-04 | Amkor Technology, Inc. | Method for forming a reduced thickness packaged electronic device |
| TW200720404A (en) * | 2005-09-22 | 2007-06-01 | Mitsubishi Chem Corp | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
| TW201027005A (en) * | 2008-11-21 | 2010-07-16 | Xicato Inc | Light emitting diode module with three part color matching |
| TW201027796A (en) * | 2008-09-29 | 2010-07-16 | Seiko Instr Inc | Light emitting device and method of manufacturing the same |
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|---|---|---|---|---|
| US5019892A (en) * | 1988-02-18 | 1991-05-28 | Amp Incorporated | Chip carrier with accumulator |
| US5998878A (en) * | 1995-07-13 | 1999-12-07 | Eastman Kodak Company | Image sensor assembly and packaging method |
| US6399418B1 (en) * | 2001-07-26 | 2002-06-04 | Amkor Technology, Inc. | Method for forming a reduced thickness packaged electronic device |
| TW200720404A (en) * | 2005-09-22 | 2007-06-01 | Mitsubishi Chem Corp | Member for semiconductor light emitting device and method for manufacturing such member, and semiconductor light emitting device using such member |
| TW201027796A (en) * | 2008-09-29 | 2010-07-16 | Seiko Instr Inc | Light emitting device and method of manufacturing the same |
| TW201027005A (en) * | 2008-11-21 | 2010-07-16 | Xicato Inc | Light emitting diode module with three part color matching |
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