TWI461838B - Method and system for repairing halftone mask - Google Patents
Method and system for repairing halftone mask Download PDFInfo
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本發明關於用以修復位於半導體或薄膜電晶體液晶顯示器(TFT-LCD)之薄膜電晶體基材中之缺陷區域的方法。更具體地，本發明關於用以修復半色調遮罩的方法與系統，其可藉由修復製程來確保修復部分的均勻透射率，該修復製程包含以下步驟：使用一雷射光束從該半色調遮罩移除缺陷；在該缺陷區域上有效地形成阻斷薄膜；調整該阻斷薄膜的厚度；以及即時調整透射率。且甚至在形成一薄膜後，該方法與系統仍可提供移除遮罩中之缺陷的功能。The present invention relates to a method for repairing defective regions in a thin film transistor substrate of a semiconductor or thin film transistor liquid crystal display (TFT-LCD). More particularly, the present invention relates to a method and system for repairing a halftone mask that can ensure uniform transmission of a repaired portion by a repair process that includes the steps of using a laser beam from the halftone The mask removes the defect; the blocking film is effectively formed on the defective region; the thickness of the blocking film is adjusted; and the transmittance is adjusted in real time. And even after forming a film, the method and system can provide the function of removing defects in the mask.
液晶顯示器TFT和濾色片具有若干層，其是沈積在彼此的頂部之上，且各自藉由微影製程圖案化。由於單一層是藉由微影製程的單一循環所形成，如果能夠減少微影製程之每一循環的時間，則就處理成本而言可獲得巨大效應。不過，由於習用的光遮罩是配置為允許在一層中僅實現一圖案，以致其為不經濟的。The liquid crystal display TFT and color filter have several layers which are deposited on top of each other and are each patterned by a lithography process. Since a single layer is formed by a single cycle of the lithography process, if the time of each cycle of the lithography process can be reduced, a huge effect can be obtained in terms of processing cost. However, since the conventional light mask is configured to allow only one pattern to be realized in one layer, it is uneconomical.
為了解決習用光遮罩的這一類問題，已發展狹縫遮罩(slit mask)、灰階遮罩(gray tone mask)、半色調遮罩及其類似物。In order to solve such problems as conventional light masks, slit masks, gray tone masks, halftone masks, and the like have been developed.
狹縫遮罩利用光的散射。那就是說，狹縫遮罩利用光散射的性質，藉以使光通過比特定值更細的狹縫，以確保施加至此之波長的線性經歷能量分散。不過，對狹縫遮罩而言，由於散射通過細小狹縫的光為不均勻分佈，使暴露能量根據位置而變化，因為在餘留薄膜上依據位置形成的不規則性，使其難以在餘留薄膜上獲得均勻厚度。The slit mask utilizes the scattering of light. That is to say, the slit mask utilizes the property of light scattering whereby light passes through a slit that is thinner than a specific value to ensure that the linearity applied to the wavelength applied thereto is subjected to energy dispersion. However, for the slit mask, since the light scattered through the fine slit is unevenly distributed, the exposure energy varies depending on the position, because the irregularity formed on the remaining film depending on the position makes it difficult to A uniform thickness is obtained on the film.
灰階遮罩具有光透射部，其允許光經此完全透射；光阻斷部，其完全阻斷光；以及灰階層，一旦接受光照明，其允許減量的光通過此處。由於灰階遮罩使用通過細小圖案之光的繞射來調整光的透射量，在灰階圖案的區域超過預定尺寸的情況下，以及在灰階遮罩具有預定或更大尺寸的情況下，要獲得均勻圖案是困難的。The gray scale mask has a light transmissive portion that allows light to be completely transmitted therethrough; a light blocking portion that completely blocks light; and a gray level that allows light to pass therethrough upon receipt of light illumination. Since the grayscale mask adjusts the transmission amount of light using diffraction by light of a fine pattern, in the case where the area of the grayscale pattern exceeds a predetermined size, and in the case where the grayscale mask has a predetermined or larger size, It is difficult to obtain a uniform pattern.
半色調遮罩包括光透射部，其形成在透明基材上；光阻斷部，其完全阻斷光；以及半色調部，其調整光的透射率，以允許光的部分透射。半色調遮罩可定義為具有形成在其上之半色調部的遮罩。The halftone mask includes a light transmitting portion formed on the transparent substrate; a light blocking portion that completely blocks the light; and a halftone portion that adjusts the transmittance of the light to allow partial transmission of the light. A halftone mask can be defined as a mask having a halftone portion formed thereon.
半色調遮罩允許光均勻地通過半色調部，且因此有利地允許形成均勻的餘留薄膜。The halftone mask allows light to pass uniformly through the halftone portion, and thus advantageously allows a uniform remaining film to be formed.
半色調遮罩允許簡化遮罩形成製程，但需要用於製造遮罩的額外製程，從而增加用於製造遮罩的製程數。The halftone mask allows for a simplified masking process, but requires an additional process for making the mask, thereby increasing the number of processes used to make the mask.
那就是說，當如銷孔或類似缺陷於製造期間形成在遮罩中時，會在施加遮罩前將其修復。當修復形成在遮罩之半色調部中的缺陷時，必須藉由調整光透射率，使之適於允許通過半色調部的缺陷區域的光與通過鄰接缺陷區域之半色調部的無缺陷區域的光位於相同的位準，以維持結果薄膜的厚度均勻性。That is to say, when a pinhole or the like is formed in the mask during manufacture, it is repaired before the mask is applied. When repairing a defect formed in the halftone portion of the mask, it is necessary to adjust the light transmittance to be adapted to allow light passing through the defective region of the halftone portion and the defect-free region passing through the halftone portion of the adjacent defect region. The light is at the same level to maintain the thickness uniformity of the resulting film.
當諸如銷孔的缺陷形成在半色調遮罩的半色調部中時，通過此處的光透射量變得與半色調部的其他區域不同，從而在使用光阻或有機介電薄膜的情況下導致依位置而定的暴露能量變異，以致不規則性形成在結果薄膜的表面上，從而難以獲得均勻的薄膜厚度。就此而言，當在薄膜上形成階(step)時，由於使非期待的部分開孔，並於後製程(例如，乾燥、蝕刻、灰化等)期間成為缺陷，因此必須修復半色調部的缺陷區域。When a defect such as a pin hole is formed in a halftone portion of a halftone mask, the amount of light transmission therethrough becomes different from other regions of the halftone portion, thereby causing a case where a photoresist or an organic dielectric film is used The positional variation of the exposure energy is such that irregularities are formed on the surface of the resulting film, making it difficult to obtain a uniform film thickness. In this regard, when a step is formed on the film, since the undesired portion is opened and becomes defective during the post process (for example, drying, etching, ashing, etc.), it is necessary to repair the halftone portion. Defect area.
習用地，為了平衡半色調部之缺陷區域及與其鄰接之無缺陷區域間的透射率，修復製程藉由從半色調部移除缺陷區域，並隨後在半色調部之局部區域上進行沈積來執行。Conventionally, in order to balance the transmittance between the defective region of the halftone portion and the defect-free region adjacent thereto, the repair process is performed by removing the defective region from the halftone portion and then depositing on a partial region of the halftone portion. .
然而，在沈積方法中，於局部區域調整透射率的困難導致修復區域以及半色調部之相鄰區域之間存在透射率差，從而導致沈積薄膜之階加寬的問題。沈積層之加寬的階在後製程(例如，乾燥、蝕刻、灰化等)期間使不需要的部分開孔，從而仍導致位於遮罩中的缺陷。尤其，透射率變異隨著沈積條件而增加，使其難以確保修復區域具有與其相鄰區域相同的透射率位準。However, in the deposition method, the difficulty in adjusting the transmittance in the local region causes a difference in transmittance between the repaired region and the adjacent region of the halftone portion, resulting in a problem of the step width of the deposited film. The widened steps of the deposited layer open the unwanted portions during the post process (eg, drying, etching, ashing, etc.), thereby still causing defects in the mask. In particular, the transmittance variation increases with deposition conditions, making it difficult to ensure that the repaired region has the same transmittance level as its adjacent region.
本發明之構想是解決相關技術的上述問題，且本發明之一目的在於提供一種用於修復半色調遮罩的方法與系統，其可藉由執行修復製程來確保修復部分的均勻透射率，該修復製程包含以下步驟：使用雷射光束從該半色調遮罩移除缺陷；在該缺陷區域上有效地形成阻斷薄膜；調整該阻斷薄膜的厚度；以及即時調整透射率；且甚至在形成薄膜後，本發明之方法與系統仍可提供從該半色調遮罩移除缺陷的功能。The idea of the present invention is to solve the above problems of the related art, and an object of the present invention is to provide a method and system for repairing a halftone mask which can ensure uniform transmittance of a repaired portion by performing a repair process, The repair process includes the steps of: removing a defect from the halftone mask using a laser beam; forming a barrier film on the defect area; adjusting the thickness of the barrier film; and adjusting the transmittance instantaneously; and even forming After the film, the method and system of the present invention can still provide the ability to remove defects from the halftone mask.
根據本發明之一態樣，玆提供一種半色調遮罩的修復方法，其藉由透過雷射光束輻射至原料而將該原料沉積在半色調遮罩上之半色調部的缺陷部分上，以修復該缺陷部分。According to an aspect of the present invention, there is provided a repair method of a halftone mask which deposits a raw material on a defective portion of a halftone portion on a halftone mask by radiating a laser beam to a raw material to Fix the defective part.
該方法可包含以下步驟：從該半色調部移除該缺陷部分；沈積半色調薄膜於該半色調部的一部分上，其中該缺陷部分係由該部分移除。The method may include the steps of: removing the defective portion from the halftone portion; depositing a halftone film on a portion of the halftone portion, wherein the defective portion is removed by the portion.
藉由雷射輻射來沈積半色調薄膜的原料可包括選自Cr、Cu、Ag、Au、Al、Co、Fe、Mo、Ni、Pb、Ti、W、Zn、Si、O、N以及C中之至少一個。The raw material for depositing a halftone film by laser irradiation may include a material selected from the group consisting of Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, and C. At least one of them.
使用原料沈積的半色調薄膜可由選自Mox Oy 、Mo+Si、Mo+Six Ny 、Mo+SiO2 、Wx Oy 、W+Si、W+Six Ny 、W+SiO2 、Cr、Cr+W+SiO2 、Cr+W+Six Ny 、Crx Oy 、Cr+Si、Cr+Six Ny 、Cr+SiO2 、Cr+Mo+Six Ny 、Cr+Mo+SiO2 、Cr+Mo+W+Six Ny 以及Cr+Mo+W+SiO2 中之一材料構成。以此成分，半色調薄膜甚至在清潔製程後仍可保持牢固地附接。此外，在使用該原料以外，在缺陷部分上的沈積可包含以下步驟：在該缺陷部分上沈積Mo或W；以及在該沈積薄膜上再沈積Si、SiO2 和Six Ny 的其中之一。The halftone film deposited using the raw material may be selected from the group consisting of Mo x O y , Mo + Si, Mo + Si x N y , Mo + SiO 2 , W x O y , W + Si, W + Si x N y , W + SiO 2 , Cr, Cr+W+SiO 2 , Cr+W+Si x N y , Cr x O y , Cr+Si, Cr+Si x N y , Cr+SiO 2 , Cr+Mo+Si x N y , It is composed of one of Cr+Mo+SiO 2 , Cr+Mo+W+Si x N y and Cr+Mo+W+SiO 2 . With this composition, the halftone film remains firmly attached even after the cleaning process. Further, in addition to using the raw material, the deposition on the defective portion may include the steps of depositing Mo or W on the defective portion; and depositing one of Si, SiO 2 and Si x N y on the deposited film .
從半色調部移除缺陷部分可包含以下步驟：根據一圖案移除該缺陷部分，該圖案匹配缺陷部分之圖案，以增強製程效率。Removing the defective portion from the halftone portion may include the step of removing the defective portion according to a pattern that matches the pattern of the defective portion to enhance process efficiency.
使用雷射光束移除缺陷部分可包含以下步驟：使用一光學鄰近校正(OPC)遮罩移除缺陷部分，以補足於該雷射光束之圓形邊緣的尺寸。Removing the defective portion using the laser beam can include the step of removing the defective portion using an optical proximity correction (OPC) mask to complement the size of the circular edge of the laser beam.
移除缺陷部分可包含以下步驟：相對雷射光束之源執行邊緣鎖定，以防止自半色調部移除無缺陷部分。Removing the defective portion may include the step of performing edge locking with respect to the source of the laser beam to prevent removal of the defect free portion from the halftone portion.
該方法可進一步包含以下步驟：藉由在使用該原料沈積該半色調薄膜後量測透射率，以調整該半色調薄膜的透射率。可重複調整透射率直到透射率滿足預設條件，從而改善製程效率為止。調整透射率可以0.01至10%的範圍來執行。The method may further comprise the step of adjusting the transmittance of the halftone film by measuring the transmittance after depositing the halftone film using the raw material. The transmittance can be adjusted repeatedly until the transmittance meets the preset conditions, thereby improving the process efficiency. The adjustment of the transmittance can be performed in the range of 0.01 to 10%.
移除該缺陷部分與沈積該半色調薄膜可使用具有400 nm或更小波長的雷射光束執行。Removing the defective portion and depositing the halftone film can be performed using a laser beam having a wavelength of 400 nm or less.
沈積該半色調薄膜可使用具有1 Hz至10 kHz之脈衝重複比的雷射光束執行。Depositing the halftone film can be performed using a laser beam having a pulse repetition ratio of 1 Hz to 10 kHz.
在沈積該半色調薄膜期間，可使用載氣供應原料，而載氣通量可為50至500 sccm。During the deposition of the halftone film, a carrier gas supply material may be used, and the carrier gas flux may be 50 to 500 sccm.
可以20至80℃的溫度供應原料，以降低原料的蒸氣壓力。The raw material may be supplied at a temperature of 20 to 80 ° C to lower the vapor pressure of the raw material.
根據本發明之另一態樣，玆提供一種半色調遮罩之修復系統。In accordance with another aspect of the present invention, a halftone mask repair system is provided.
該系統可包括腔室，其用於沈積薄膜；原料產生/供應單元，其供應原料至該腔室中；以及光學系統，其使用雷射光束離子化該原料，以在該腔室內於半色調遮罩之缺陷部分上沈積半色調薄膜。The system may include a chamber for depositing a film; a raw material generating/supplying unit that supplies the raw material into the chamber; and an optical system that ionizes the raw material using a laser beam to be halftone in the chamber A halftone film is deposited on the defective portion of the mask.
該光學系統可包括雷射源以及雷射頭單元。The optical system can include a laser source and a laser head unit.
該雷射源可發射具有400 nm或更小波長的雷射光束，或可發射具有1 Hz至10 kHz之脈衝重複比的雷射光束。The laser source can emit a laser beam having a wavelength of 400 nm or less, or can emit a laser beam having a pulse repetition ratio of 1 Hz to 10 kHz.
該原料產生/供應單元可包括原料產生部，其配置以允許有效供應原料，並儲存欲供應至該腔室的原料且昇華該原料，以混合該昇華原料與載氣；以及溫度控制單元，其使載氣或原料維持在其昇華溫度或更高溫度。The raw material production/supply unit may include a raw material generating portion configured to allow efficient supply of the raw material, and store the raw material to be supplied to the chamber and sublimate the raw material to mix the sublimated raw material and the carrier gas; and a temperature control unit The carrier gas or feedstock is maintained at its sublimation temperature or higher.
該系統可包括複數個原料產生部，以同時供應二或多種原料。The system can include a plurality of feedstock generating portions to supply two or more feedstocks simultaneously.
該溫度控制單元可包括加熱器，其加熱該原料；溫度感測器，其偵測該加熱器的溫度；以及溫度控制器，其根據該溫度感測器偵測的溫度來控制該加熱器的溫度。The temperature control unit may include a heater that heats the material, a temperature sensor that detects the temperature of the heater, and a temperature controller that controls the heater based on the temperature detected by the temperature sensor temperature.
該原料產生/供應單元可連接到至少一個載氣供應單元，其供應攜帶該原料至該腔室中的載氣。The feedstock generation/supply unit can be coupled to at least one carrier gas supply unit that supplies a carrier gas that carries the feedstock into the chamber.
該半色調修復系統可進一步包括淨化氣體供應單元，其透過淨化管供應淨化氣體至該腔室中，以純化該腔室中之剩餘原料。The halftone repair system may further include a purge gas supply unit that supplies purge gas to the chamber through the purge tube to purify the remaining material in the chamber.
該半色調修復系統可進一步包括剩餘氣體排放單元，其於該腔室中之反應後，從該腔室排出剩餘氣體至外側。The halftone repair system may further include a residual gas discharge unit that discharges residual gas from the chamber to the outside after the reaction in the chamber.
該剩餘氣體排放單元可包括材料收集器，其從該腔室排出之該剩餘氣體收集材料；熱處理部，其透過熱處理分離該材料收集器未從該剩餘氣體分離之材料；過濾器，其過濾已通過該材料收集器和該熱處理部的排放氣體；幫浦，其抽泵已通過該過濾器的排放氣體；以及排放壓力/通量控制器，其調整該幫浦的壓力。The residual gas discharge unit may include a material collector that discharges the remaining gas collection material from the chamber; a heat treatment portion that separates a material from which the material collector is not separated from the remaining gas by heat treatment; a filter that filters An exhaust gas passing through the material collector and the heat treatment portion; a pump that discharges the exhaust gas that has passed through the filter; and a discharge pressure/flux controller that adjusts the pressure of the pump.
該原料可包括選自Cr、Cu、Ag、Au、Al、Co、Fe、Mo、Ni、Pb、Ti、W、Zn、Si、O、N以及C中之至少一個。The raw material may include at least one selected from the group consisting of Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, and C.
該半色調薄膜可由選自Mox Oy 、Mo+Si、Mo+Six Ny 、Mo+SiO2 、Wx Oy 、W+Si、W+Six Ny 、W+SiO2 、Cr、Cr+W+SiO2 、Cr+W+Six Ny 、Crx Oy 、Cr+Si、Cr+Six Ny 、Cr+SiO2 、Cr+Mo+Six Ny 、Cr+Mo+SiO2 、Cr+Mo+W+Six Ny 以及Cr+Mo+W+SiO2 中的材料構成。The halftone film may be selected from the group consisting of Mo x O y , Mo + Si, Mo + Si x N y , Mo + SiO 2 , W x O y , W + Si, W + Si x N y , W + SiO 2 , Cr , Cr+W+SiO 2 , Cr+W+Si x N y , Cr x O y , Cr+Si, Cr+Si x N y , Cr+SiO 2 , Cr+Mo+Si x N y , Cr+Mo Material composition in +SiO 2 , Cr + Mo + W + Si x N y and Cr + Mo + W + SiO 2 .
本發明的示範實施例現將參照伴隨圖式詳細敘述。Exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
本發明之標的為修復半色調遮罩之半色調部上之主動區域(active region)或缺陷部分(缺陷)上之明顯缺陷，其藉由以下方式來實行：以有效地移除缺陷部分，並以雷射光束照射原料(舉例來說，金屬材料)，以用該原料來補足移除區域。換言之，半色調遮罩之半色調部上的缺陷部分是藉由透過使雷射光束輻射原料而沈積半色調薄膜(阻斷薄膜)在缺陷部分上來修復。The subject matter of the present invention is to repair significant defects in the active region or defective portion (defect) on the halftone portion of the halftone mask, which is carried out by: effectively removing the defective portion, and A raw material (for example, a metallic material) is irradiated with a laser beam to supplement the removed area with the raw material. In other words, the defective portion on the halftone portion of the halftone mask is repaired by depositing a halftone film (blocking film) on the defective portion by irradiating the laser beam with the raw material.
尤其，為了修復半色調遮罩之半色調部上的缺陷部分，藉由在半色調部上決定缺陷部分的準確位置，來初步具體指定缺陷部分，隨後並進行1)從半色調部移除缺陷部分，以及2)將半色調薄膜沉積於半色調部的移除區域上，缺陷部分係自移除區域移除。In particular, in order to repair a defective portion on the halftone portion of the halftone mask, the defective portion is initially specified by determining the exact position of the defective portion on the halftone portion, and then 1) removing the defect from the halftone portion Part, and 2) depositing a halftone film on the removed area of the halftone portion, the defective portion being removed from the removed area.
參照第1及2圖，缺陷部分的位置是藉由確認缺陷部分來確認，使用雷射光束將半色調薄膜沈積在缺陷部分上，並量測透射率，從而完成修復製程。Referring to Figures 1 and 2, the position of the defective portion is confirmed by confirming the defective portion, and a halftone film is deposited on the defective portion using a laser beam, and the transmittance is measured, thereby completing the repair process.
具體地，載入欲修復的半色調遮罩，以決定在其上之缺陷部分的位置(S1)。接著，將缺陷層，也就是，缺陷部分，從半色調遮罩移除(S4)。接下來，半色調薄膜沈積在半色調遮罩的移除部分上，以使其具有之透射率，與相鄰移除部分之半色調部的其他部分相同(S5)。在此基本製程中，可執行圖案匹配與邊緣鎖定，以確保更有效的修復(S2、S3)。換言之，步驟S2和步驟S3可依需要增加或刪除。Specifically, the halftone mask to be repaired is loaded to determine the position of the defective portion thereon (S1). Next, the defect layer, that is, the defective portion, is removed from the halftone mask (S4). Next, a halftone film is deposited on the removed portion of the halftone mask so as to have the same transmittance as the other portions of the halftone portion of the adjacent removed portion (S5). In this basic process, pattern matching and edge locking can be performed to ensure more efficient repair (S2, S3). In other words, step S2 and step S3 can be added or deleted as needed.
缺陷部分的移除是使用雷射光束執行。特別地，當缺陷部分具有1 μm或更小的細小尺寸時，較佳地使用OPC遮罩，以防止由於雷射光束之固有性質而以圓形移除薄膜。The removal of the defective portion is performed using a laser beam. In particular, when the defective portion has a fine size of 1 μm or less, an OPC mask is preferably used to prevent the film from being removed in a circular shape due to the inherent properties of the laser beam.
執行圖案匹配，以允許在從半色調部移除時，以與遮罩中之現存圖案相同的圖案移除缺陷部分。此步驟是為了防止移除非必要部分，同時達成修復效率的目的而執行。在此步驟中，如第2圖所示，將半色調遮罩之缺陷部分的圖案複製，以獲得該圖案的形狀，以便缺陷部分可根據該圖案的形狀移除，或以便薄膜沈積可根據該形狀完成。Pattern matching is performed to allow the defective portion to be removed in the same pattern as the existing pattern in the mask when removed from the halftone portion. This step is performed to prevent the removal of unnecessary parts while achieving the purpose of repair efficiency. In this step, as shown in FIG. 2, the pattern of the defective portion of the halftone mask is copied to obtain the shape of the pattern so that the defective portion can be removed according to the shape of the pattern, or so that film deposition can be performed according to the pattern The shape is complete.
邊緣鎖定為匹配現存圖案之邊緣與將從半色調遮罩移除之缺陷部分之邊緣的製程，其用於在移除缺陷部分的步驟中準確調整雷射光束的輻射區域。The edge lock is a process for matching the edge of the existing pattern with the edge of the defective portion that will be removed from the halftone mask, which is used to accurately adjust the radiation area of the laser beam in the step of removing the defective portion.
接著，藉由量測沈積薄膜(阻斷薄膜)的透射率來決定沈積薄膜的透射率是否具有參照半色調遮罩之鄰接無缺陷部分之透射率而設定的適當值，且若決定沈積薄膜的透射率不具有適當值，則重複上述步驟(S6)。透射率的量測為即時執行，且當沈積薄膜的透射率達到適當值時，製程完成(S7)。Next, by measuring the transmittance of the deposited film (blocking film) to determine whether the transmittance of the deposited film has an appropriate value set with reference to the transmittance of the adjacent defect-free portion of the halftone mask, and if it is decided to deposit the film If the transmittance does not have an appropriate value, the above step (S6) is repeated. The measurement of the transmittance is performed immediately, and when the transmittance of the deposited film reaches an appropriate value, the process is completed (S7).
接下來，移除缺陷部分(S4)並透過離子沈積沈積半色調(HT)薄膜，以在移除部分上形成阻斷薄膜(S5)將參照第3圖更詳細敘述。Next, the defective portion (S4) is removed and a halftone (HT) film is deposited by ion deposition to form a blocking film (S5) on the removed portion, which will be described in more detail with reference to FIG.
以雷射為基礎的沈積製程是使用下列原理執行：藉由輻射至原料的雷射打斷原料中之金屬元素與配位基之間的鍵結，以允許金屬元素從原料分離，並以薄膜形狀沈積在靶材上。The laser-based deposition process is performed using the following principle: breaking the bond between the metal element and the ligand in the raw material by laser radiation to the raw material to allow the metal element to be separated from the raw material and to be a thin film The shape is deposited on the target.
在本發明中，缺陷部分的移除與半色調遮罩中的沈積是使用雷射光束執行，且雷射光束的輻射是使用光學系統執行，該光學系統包括雷射源、雷射頭單元及類似物。為了從半色調部移除缺陷部分，使用具有某些頻率的雷射光束。由於以15微微秒(ps)或更小的脈衝寬度移除剩餘薄膜不會有熱現象，較佳的是使用具有盡可能短之波長的雷射光束。更佳的是使用不提供熱現象之具有400 nm波長的雷射光束或具有1 Hz至10 kHz之快速脈衝重複比的雷射光束。還有，更佳的是可使用具有1 kHz至10 kHz之快速脈衝重複比的雷射光束。In the present invention, the removal of the defective portion and the deposition in the halftone mask are performed using a laser beam, and the radiation of the laser beam is performed using an optical system including a laser source, a laser head unit, and analog. In order to remove the defective portion from the halftone portion, a laser beam having a certain frequency is used. Since the remaining film is removed with a pulse width of 15 picoseconds (ps) or less, there is no thermal phenomenon, and it is preferable to use a laser beam having a wavelength as short as possible. More preferably, a laser beam having a wavelength of 400 nm or a laser beam having a fast pulse repetition ratio of 1 Hz to 10 kHz which does not provide a thermal phenomenon is used. Also, it is more preferable to use a laser beam having a fast pulse repetition ratio of 1 kHz to 10 kHz.
在本發明中，移除部分的沈積基本上包含以下步驟：供應原料至移除部分(T3)；以及使用雷射光束在移除部分上沈積薄膜(T4)。對更有效的製程而言，可依需要供應淨化氣體或保護氣體(T1、T2)，且當製程完成時，阻斷原料供應(T5)，以完成製程(T6)。須了解的是，可執行製程直到透過沈積部分的透射率量測決定沈積部分的透射率達到適當值為止。In the present invention, the deposition of the removed portion basically comprises the steps of: supplying the raw material to the removed portion (T3); and depositing the thin film (T4) on the removed portion using the laser beam. For more efficient processes, purge gas or shielding gas (T1, T2) may be supplied as needed, and when the process is completed, the feedstock supply (T5) is blocked to complete the process (T6). It should be understood that the process can be performed until the transmittance of the deposited portion reaches the appropriate value by the transmittance measurement through the deposited portion.
原料可由金屬材料組成。在此情況下，原料具有低蒸氣壓力，以允許原料的慢速分解是理想的。進一步，原料的慢分解導致阻斷薄膜的厚度逐漸增加，其導致密度增加。The raw material may be composed of a metal material. In this case, it is desirable that the feedstock has a low vapor pressure to allow slow decomposition of the feedstock. Further, the slow decomposition of the raw material causes a gradual increase in the thickness of the barrier film, which results in an increase in density.
因此，載氣較佳的是以50至500 sccm的通量供應，且更佳的是以20至80℃的溫度供應原料，以降低原料的蒸氣壓力。Therefore, the carrier gas is preferably supplied in a flux of 50 to 500 sccm, and more preferably at a temperature of 20 to 80 ° C to lower the vapor pressure of the raw material.
當為了修復半色調部而沈積阻斷薄膜時，厚度會為了調整阻斷薄膜的透射率而調整。必須使透射率保持在相鄰此處之半色調遮罩之無缺陷區域的0.5%或更小的範圍內。用於透射率調整的參數可包括雷射功率、溫度、通量、掃描重複時間等。須了解的是，可選擇這些參數中的一或多個來調整透射率。When the barrier film is deposited to repair the halftone portion, the thickness is adjusted to adjust the transmittance of the barrier film. The transmittance must be maintained within 0.5% or less of the defect-free region of the halftone mask adjacent thereto. Parameters for transmittance adjustment may include laser power, temperature, flux, scan repetition time, and the like. It will be appreciated that one or more of these parameters may be selected to adjust the transmittance.
在本發明中，薄膜厚度是為了準確調整透射率而調整。在用於灰階遮罩之習用的修復方法中，由於厚度調整是藉由透射或阻斷通過目標部分的光來執行，對修復缺陷部分的薄膜而言，具有預定厚度或更厚的厚度，便足以阻斷光。In the present invention, the film thickness is adjusted in order to accurately adjust the transmittance. In a conventional repair method for a gray scale mask, since the thickness adjustment is performed by transmitting or blocking light passing through the target portion, the film repairing the defective portion has a thickness of a predetermined thickness or more, It is enough to block the light.
反之，製造商生產之10至90%的半色調遮罩是依據線/間隔寬度(line/space width)而具有彼此不同的厚度，其中線/間隔寬度是在設計主動區域時決定。因此，需要厚度調整。Conversely, the manufacturer's 10 to 90% halftone masks have different thicknesses from each other depending on the line/space width, where the line/space width is determined when the active area is designed. Therefore, thickness adjustment is required.
本發明利用如下文所述之用於厚度調整的參數。The present invention utilizes parameters for thickness adjustment as described below.
首先，可調整雷射光束的波長、功率強度、脈衝重複率與脈衝寬度。或者，可調整攜帶原料之載氣的通量。舉例來說，可調整惰性氣體(例如，Ar、He等)的通量。First, the wavelength, power intensity, pulse repetition rate, and pulse width of the laser beam can be adjusted. Alternatively, the flux of the carrier gas carrying the material can be adjusted. For example, the flux of an inert gas (eg, Ar, He, etc.) can be adjusted.
或者，厚度調整可藉由使用具有低蒸氣壓力的原料或藉由調整原料溫度、原料在反應腔室內之真空區域的滯留時間、沈積區域上的掃描速度或沈積區域上的狹縫尺寸來獲得。Alternatively, the thickness adjustment can be obtained by using a raw material having a low vapor pressure or by adjusting the temperature of the raw material, the residence time of the vacuum region of the raw material in the reaction chamber, the scanning speed on the deposition region, or the slit size on the deposition region.
尤其，在一實施例中，可調整關於原料的參數，以最大化沈積效率。In particular, in an embodiment, parameters regarding the feedstock can be adjusted to maximize deposition efficiency.
在一實施例中，原料可包括選自Cr、Cu、Ag、Au、Al、Co、Fe、Mo、Ni、Pb、Ti、W、Zn、Si、O、N以及C中的至少一個。舉例來說，可使用諸如Cr+Mo、Cr+W、Cr+Mo+W、Cu+Mo、Cu+W、Cu+Mo+W、Mo+Si以及W+Si等的組合作為原料。In an embodiment, the raw material may include at least one selected from the group consisting of Cr, Cu, Ag, Au, Al, Co, Fe, Mo, Ni, Pb, Ti, W, Zn, Si, O, N, and C. For example, a combination such as Cr+Mo, Cr+W, Cr+Mo+W, Cu+Mo, Cu+W, Cu+Mo+W, Mo+Si, and W+Si may be used as a raw material.
進一步地，使用雷射沈積的半色調薄膜可由選自Mox Oy 、Mo+Si、Mo+Six Ny 、Mo+SiO2 、Wx Oy 、W+Si、W+Six Ny 、W+SiO2 、Cr、Cr+W+SiO2 、Cr+W+Six Ny 、Crx Oy 、Cr+Si、Cr+Six Ny 、Cr+SiO2 、Cr+Mo+Six Ny 、Cr+Mo+SiO2 、Cr+Mo+W+Six Ny 以及Cr+Mo+W+SiO2 中的材料構成。尤其，在將諸如Mo及W之單一成分用於沈積的情況下，所沈積的單一成分在修復後的清潔製程期間從薄膜分離。不過，當諸如Mo+Si、Mo+Six Ny 、Mo+SiO2 、W+Si、W+Six Ny 以及W+SiO2 的結合原料用於沈積時，所沈積的結合原料可充分耐受修復後的清潔製程，且不會遭受如單一成分的此類問題，從而保證沈積後之穩定狀態。Further, the halftone film deposited using laser may be selected from the group consisting of Mo x O y , Mo + Si, Mo + Si x N y , Mo + SiO 2 , W x O y , W + Si, W + Si x N y , W+SiO 2 , Cr, Cr+W+SiO 2 , Cr+W+Si x N y , Cr x O y , Cr+Si, Cr+Si x N y , Cr+SiO 2 , Cr+Mo+Si The material composition of x N y , Cr+Mo+SiO 2 , Cr+Mo+W+Si x N y and Cr+Mo+W+SiO 2 . In particular, where a single component such as Mo and W is used for deposition, the deposited single component is separated from the film during the cleaning process after repair. However, when a bonding raw material such as Mo+Si, Mo+Si x N y , Mo+SiO 2 , W+Si, W+Si x N y and W+SiO 2 is used for deposition, the deposited bonding raw material may be sufficient It is resistant to the repair process after repair and does not suffer from such problems as a single component, thus ensuring a stable state after deposition.
或者，當Cr、Mo或W沈積在缺陷部分上，且Si、SiO2 和Six Ny 中之一接著沈積在沈積薄膜上時，沈積薄膜呈現抗清潔製程的耐受性。尤其，由於MoSi相對Ghi線(Ghi-line)和I線(I-line)(紫外光照射波長)呈現不同透射率，由MoSi構成的沈積薄膜呈現優於先前沈積薄膜的性質。Alternatively, when Cr, Mo or W is deposited on the defective portion, and one of Si, SiO 2 and Si x N y is subsequently deposited on the deposited film, the deposited film exhibits resistance to a cleaning process. In particular, since MoSi exhibits different transmittances with respect to Ghi-line and I-line (ultraviolet light irradiation wavelength), a deposited film composed of MoSi exhibits properties superior to those of previously deposited films.
接下來，一種根據本發明之實施例的用於執行半色調遮罩之修復製程的系統將參照第4及5圖敘述。Next, a system for performing a halftone mask repair process according to an embodiment of the present invention will be described with reference to FIGS. 4 and 5.
參照第4圖，修復系統包括載氣供應單元100，其供應可攜帶用於修復半色調遮罩之原料的載氣；原料產生/供應單元200，其混合原料與載氣，並供應該混合物；以及光學系統500，其輻射用於修復的雷射光束。為了改善製程效率，該系統可進一步包括淨化氣體供應單元300，其供應淨化氣體，以純化腔室300的內部空間；保護氣體供應單元400，其供應保護氣體，以防止原料從腔室排出。該系統可進一步包括剩餘氣體排出單元700，其在用於修復的原料於腔室中反應後，從腔室將剩餘氣體排出至外側。Referring to FIG. 4, the repairing system includes a carrier gas supply unit 100 that supplies a carrier gas that can carry a raw material for repairing a halftone mask; a raw material generating/supplying unit 200 that mixes the raw material with a carrier gas and supplies the mixture; And an optical system 500 that radiates a laser beam for repair. In order to improve process efficiency, the system may further include a purge gas supply unit 300 that supplies purge gas to purify the internal space of the chamber 300, and a shield gas supply unit 400 that supplies a shielding gas to prevent the feedstock from being discharged from the chamber. The system may further include a residual gas discharge unit 700 that discharges the remaining gas from the chamber to the outside after the raw material for repair is reacted in the chamber.
系統的個別部件將參照第5圖更詳細敘述，第5圖為根據本發明之一實施例之修復系統的方塊圖。The individual components of the system will be described in more detail with reference to Figure 5, which is a block diagram of a repair system in accordance with an embodiment of the present invention.
在系統中，載氣從載氣供應單元100透過管件供應至原料產生部210，並與原料混合，其轉而透過管件供應至腔室600中，並遭受透過光學系統500的雷射光束輻射，以便使阻斷薄膜透過離子化沈積在半色調遮罩之缺陷部分上。此製程可依據量測的透射率重複。接著，剩餘氣體透過剩餘氣體排出單元700從腔室600排放至外側。In the system, a carrier gas is supplied from the carrier gas supply unit 100 through the pipe member to the raw material generating portion 210, and mixed with the raw material, which is then supplied into the chamber 600 through the pipe member, and is subjected to laser beam irradiation through the optical system 500, In order to cause the barrier film to be deposited by ionization on the defective portion of the halftone mask. This process can be repeated based on the measured transmittance. Then, the remaining gas is discharged from the chamber 600 to the outside through the remaining gas discharge unit 700.
系統之個別部件的操作將詳細敘述。The operation of the individual components of the system will be described in detail.
載氣供應單元100供應用於攜帶原料的載氣，並連接至位於儲存原料之原料產生/供應單元200中的原料產生部210。接著，載氣從載氣供應單元100供應給原料產生部210，並與原料混合，以攜帶原料至腔室600中。連接至載氣供應單元100的管件設置在其一端並具有閥110，其依需要阻斷氣體供應，且通量控制器120設置在閥110的後端，以控制通量。The carrier gas supply unit 100 supplies a carrier gas for carrying a raw material, and is connected to the raw material generating portion 210 located in the raw material production/supply unit 200 that stores the raw material. Next, the carrier gas is supplied from the carrier gas supply unit 100 to the raw material generating portion 210, and mixed with the raw material to carry the raw material into the chamber 600. A pipe connected to the carrier gas supply unit 100 is provided at one end thereof and has a valve 110 that blocks the gas supply as needed, and a flux controller 120 is disposed at the rear end of the valve 110 to control the flux.
閥110、111較佳的是設置在通量控制器120的前和後側，以防止氣體逆流。理想的是，提供此類通量控制器至下文所述的各個淨化氣體供應單元300和保護氣體供應單元400。此處，這些元件是如第5圖所示般連接至管件。管件可進一步包括其他閥和加熱器。Valves 110, 111 are preferably disposed on the front and rear sides of flux controller 120 to prevent backflow of gas. It is desirable to provide such a flux controller to each of the purge gas supply unit 300 and the shield gas supply unit 400 described below. Here, these elements are connected to the tube as shown in Fig. 5. The tubular member may further include other valves and heaters.
該系統可包括一或多個載氣供應單元100，每一個皆透過管件連接至原料產生部210。如第5圖所示，當三個載氣供應單元分別連接至三個原料產生部時，三或多種原料可同時或個別地用在腔室中。The system may include one or more carrier gas supply units 100, each connected to a feedstock generating portion 210 through a tubular member. As shown in Fig. 5, when three carrier gas supply units are respectively connected to the three raw material generating portions, three or more kinds of raw materials may be used in the chamber simultaneously or individually.
原料產生部210儲存用於沈積薄膜的材料，並可包括加熱器，用以加熱材料至昇華溫度或更高的溫度；溫度感測器，用以偵測加熱器加熱之材料的溫度；以及溫度控制單元，其包括溫度控制器(未顯示)，用以根據溫度感測器偵測的溫度控制加熱器的溫度。The material generating portion 210 stores a material for depositing a thin film, and may include a heater for heating the material to a sublimation temperature or higher; a temperature sensor for detecting a temperature of the material heated by the heater; and a temperature A control unit includes a temperature controller (not shown) for controlling the temperature of the heater based on the temperature detected by the temperature sensor.
由載氣供應單元供應的載氣可為諸如氮氣的惰性氣體(可與下文所述的淨化氣體和保護氣體相同)。閥可配置在位於腔室前部之載氣注入管線的一端，以便當閥開啟時，原料立即注入腔室之中。進一步地，載氣經此從載氣供應單元注入腔室中的管件數目，可依據原料數目設定，以防止原料彼此混合。The carrier gas supplied from the carrier gas supply unit may be an inert gas such as nitrogen (which may be the same as the purge gas and the shielding gas described below). The valve can be disposed at one end of the carrier gas injection line at the front of the chamber so that when the valve is opened, the material is immediately injected into the chamber. Further, the number of tubes through which the carrier gas is injected into the chamber from the carrier gas supply unit can be set according to the number of raw materials to prevent the raw materials from mixing with each other.
淨化氣體供應單元300可透過管件供應淨化氣體至位於原料產生部210和腔室600之間的管件。此管件是連接至下文所述的熱處理部而未通過腔室。The purge gas supply unit 300 can supply the purge gas through the tube to the tube located between the raw material generating portion 210 and the chamber 600. This tube is connected to the heat treatment portion described below without passing through the chamber.
儲存在原料產生部210中的材料藉由加熱器(未顯示)加熱與氣化，接著與透過位於原料產生單元中之氣體噴嘴(未顯示)注入的載氣混合，從而提供原料。The material stored in the raw material generating portion 210 is heated and vaporized by a heater (not shown), and then mixed with a carrier gas injected through a gas nozzle (not shown) located in the raw material generating unit, thereby supplying a raw material.
以此方式產生的原料透過配置在原料產生部210內側的氣體排氣機(gas exhauster)排出，並注入腔室之中。此處，加熱器的溫度使用溫度感測器由溫度控制器(未顯示)控制。用於注入載氣的管件亦設有加熱器與溫度感測器，其控制原料溫度，以便原料溫度不至於降低到低於昇華溫度，且其控制氣體量，因為氣體的蒸氣壓力會依溫度變化。The raw material generated in this manner is discharged through a gas exhauster disposed inside the raw material generating portion 210, and is injected into the chamber. Here, the temperature of the heater is controlled by a temperature controller (not shown) using a temperature sensor. The pipe for injecting the carrier gas is also provided with a heater and a temperature sensor, which controls the temperature of the raw material so that the temperature of the raw material is not lowered below the sublimation temperature, and the amount of the gas is controlled because the vapor pressure of the gas changes depending on the temperature. .
注入腔室600的原料是用於在遮罩的缺陷部分上沈積阻斷層，淨化氣體是朝光學窗注入，以防止在雷射光束輻射至此的光學窗上形成薄膜，且保護氣體形成空氣幕，以防止原料洩漏。The material of the injection chamber 600 is for depositing a barrier layer on the defective portion of the mask, and the purge gas is injected toward the optical window to prevent the formation of a thin film on the optical window to which the laser beam is radiated, and the protective gas forms an air curtain. To prevent material leakage.
在半色調遮罩之缺陷部分上的沈積之後，參與薄膜沈積的剩餘氣體透過剩餘氣體排出單元700排放。After deposition on the defective portion of the halftone mask, the remaining gas participating in the film deposition is discharged through the remaining gas discharge unit 700.
剩餘氣體排出單元700可包括材料收集器710，其使用冷卻器從腔室排出的剩餘氣體收集材料；熱處理部720透過熱處理分離未被材料收集器710從剩餘氣體中分離的材料；過濾器730、740，其過濾已通過材料收集器和熱處理部的排放氣體，以分離金屬粒子；幫浦750，其透過連接至腔室的剩餘氣體排放管線以固定或更大的壓力抽泵腔室中的剩餘氣體；以及排放通量控制器，其藉由控制幫浦壓力來調整剩餘氣體排放管線的排放壓力。須了解的是，這些個別部件連接至排放管線。過濾器包括主要過濾器730，其用於過濾大粒子；以及次要過濾器740，其用於過濾細微粒子。熱處理部720是由加熱器構成。The remaining gas discharge unit 700 may include a material collector 710 that uses the remaining gas collection material discharged from the chamber by the cooler; the heat treatment portion 720 separates the material that is not separated from the remaining gas by the material collector 710 by heat treatment; the filter 730, 740, which filters the exhaust gas that has passed through the material collector and the heat treatment portion to separate the metal particles; the pump 750, which drains the remaining in the pump chamber through a residual gas discharge line connected to the chamber at a fixed or greater pressure a gas; and a discharge flux controller that adjusts a discharge pressure of the remaining gas discharge line by controlling the pressure of the pump. It should be understood that these individual components are connected to the discharge line. The filter includes a primary filter 730 for filtering large particles and a secondary filter 740 for filtering fine particles. The heat treatment unit 720 is composed of a heater.
在根據此實施例的系統中，氣體供應單元是連接至用於供應氣體給腔室的管件，且每一管件設有加熱器，以加熱原料至昇華溫度或更高的溫度。典型地，原料可加熱至比原料昇華溫度高約10℃。In the system according to this embodiment, the gas supply unit is connected to the tubes for supplying the gas to the chamber, and each of the tubes is provided with a heater to heat the raw material to a sublimation temperature or higher. Typically, the feedstock can be heated to about 10 ° C above the sublimation temperature of the feedstock.
就其本身而言，注入氣體是藉由加熱器加熱，致使載氣可與昇華原料混合，且致使當淨化氣體或保護氣體到達腔室時，氣體可有效地與原料混合。For its part, the injected gas is heated by the heater so that the carrier gas can be mixed with the sublimation material, and the gas can be effectively mixed with the raw material when the purge gas or the shielding gas reaches the chamber.
雖然在此實施例中，用於淨化氣體和保護氣體的氣體供應單元是分別由載氣供應單元形成，氣體可從共用的供應單元供應，因為惰性氣體或氮氣通常可用作載氣、淨化氣體和保護氣體。換言之，在惰性氣體或氮氣從氣體供應單元供應至腔室中之後，惰性氣體或氮氣可透過不同管件供應至腔室中，以作用如不同氣體。Although in this embodiment, the gas supply units for purifying the gas and the shielding gas are respectively formed by the carrier gas supply unit, the gas may be supplied from the common supply unit because the inert gas or nitrogen gas is generally used as the carrier gas and the purge gas. And shielding gas. In other words, after an inert gas or nitrogen gas is supplied from the gas supply unit to the chamber, an inert gas or nitrogen gas can be supplied to the chamber through different tubes to act as a different gas.
第6和7圖顯示第5圖所示之修復系統之光學系統500和腔室600的範例。在各圖式中，類似元件是以類似的元件符號表示。在本發明中，整體光學系統500是為了使雷射光束照射到供應至腔室600中之原料的目的而設置，以沈積原料在半色調遮罩的缺陷部分上。Figures 6 and 7 show an example of the optical system 500 and chamber 600 of the repair system shown in Figure 5. In the various figures, like elements are represented by like element symbols. In the present invention, the integral optical system 500 is provided for the purpose of irradiating a laser beam to the material supplied into the chamber 600 to deposit the material on the defective portion of the halftone mask.
參照第6圖，光學系統500包括複數個分束器S，其位於輻射雷射光束之雷射頭單元下方的雷射光束之輻射路徑上；狹縫遮罩510，其控制雷射光束；管透鏡540；物鏡550；腔室C，其具有光學窗；基材560；自動對焦520；CCD攝影機530(「CCD攝影機」是指「電荷耦合元件攝 影機(Charge-coupled device camera)」)；以及複數個燈L1、L2、L3。Referring to Figure 6, the optical system 500 includes a plurality of beam splitters S located on the radiation path of the laser beam below the laser head unit of the radiation laser beam; a slit mask 510 that controls the laser beam; Lens 540; objective lens 550; chamber C with optical window; substrate 560; autofocus 520; CCD camera 530 ("CCD camera" means "charge coupled device photo (Charge-coupled device camera)"; and a plurality of lights L1, L2, L3.
參照第7圖，光學系統利用Dep雷射(「Dep雷射」是指「沈積雷射(Deposition laser)」和Zap雷射(「Zap雷射」是指「修正雷射(Zapping laser)」)作為雷射，且除了第6圖所示之光學系統部件外，其進一步包括雷射光束產生器Q1、Q2。Referring to Figure 7, the optical system utilizes a Dep laser ("Dep laser" means "Deposition laser" and Zap laser ("Zap laser" means "Zapping laser") As the laser, and in addition to the optical system components shown in Fig. 6, it further includes laser beam generators Q1, Q2.
為了在半色調遮罩於薄膜沈積後具有缺陷時執行後修復製程，腔室C可具有穿透薄膜功能(through-pellicle function)，其允許腔室沿雷射通過線移動。在習用的遮罩製程中，由於在修復遮罩缺陷後會將薄膜附接至遮罩作為保護膜，因而會產生當這一類保護膜附接至遮罩後便再也無法修復遮罩的問題。然而，在本發明中，由於雷射光束具有透射通過用於保護膜之材料的波長，因而有可能在保護膜附接至遮罩後修復遮罩。舉例來說，在半色調遮罩的缺陷部分上沈積原料後，便執行附接保護膜的製程。接著，如果發現在半色調薄膜中有缺陷，腔室會沿雷射通過線移動預定距離，且雷射光束會輻射至半色調薄膜的缺陷，以修復半色調薄膜。腔室移動，致使薄膜附接至***於遮罩和欲附接之薄膜間的薄膜附接框架，且致使當腔室位於現行位置時，修復製程無法實行。In order to perform a post-repair process when the halftone mask has defects after film deposition, the chamber C may have a through-pellicle function that allows the chamber to move along the laser through the line. In the conventional masking process, since the film is attached to the mask as a protective film after repairing the mask defect, there is a problem that the mask can no longer be repaired after the protective film is attached to the mask. . However, in the present invention, since the laser beam has a wavelength transmitted through the material for the protective film, it is possible to repair the mask after the protective film is attached to the mask. For example, after the material is deposited on the defective portion of the halftone mask, the process of attaching the protective film is performed. Then, if it is found to be defective in the halftone film, the chamber is moved along the laser through the line by a predetermined distance, and the laser beam is radiated to the defect of the halftone film to repair the halftone film. The chamber is moved such that the film is attached to the film attachment frame interposed between the mask and the film to be attached, and the repair process is rendered inoperable when the chamber is in the current position.
根據本發明的實施例，執行修復製程的方法與系統包含以下步驟：使用雷射光束從半色調遮罩移除缺陷；在 缺陷區域上有效形成阻斷薄膜；調整阻斷薄膜的厚度；以及即時調整透射率，同時提供即使在薄膜形成後仍能移除缺陷的功能，從而確保修復部分的均勻透射率；保證在修復後透過移除開口缺陷以修復半色調遮罩的穩定性；以及降低製造成本。In accordance with an embodiment of the present invention, a method and system for performing a repair process includes the steps of: removing a defect from a halftone mask using a laser beam; Effectively forming a barrier film on the defect area; adjusting the thickness of the barrier film; and instantly adjusting the transmittance while providing a function of removing defects even after the film is formed, thereby ensuring uniform transmittance of the repaired portion; Repair the stability of the halftone mask by removing open defects; and reduce manufacturing costs.
雖然已連同圖式提供某些實施例來說明本發明，熟悉此技術者當明白僅經由說明的方式給予實施例，且其不同的修改、變化、變更與等同物可在不偏離本發明之精神和範圍的情況下完成。本發明的範圍應該僅受到伴隨之申請專利範圍的限制。While the invention has been described in connection with the embodiments of the present invention, the embodiments of the invention And the scope of the case is completed. The scope of the invention should be limited only by the scope of the accompanying claims.
100．．．載氣供應單元100. . . Carrier gas supply unit
110、111．．．閥110, 111. . . valve
120．．．通量控制器120. . . Flux controller
200．．．原料產生/供應單元200. . . Raw material production/supply unit
210．．．原料產生部210. . . Raw material production department
300．．．淨化氣體供應單元300. . . Purified gas supply unit
400．．．保護氣體供應單元400. . . Protective gas supply unit
500．．．光學系統500. . . Optical system
510．．．狹縫遮罩510. . . Slit mask
520．．．自動對焦520. . . auto focus
521．．．反射照明521. . . Reflective lighting
530．．．CCD攝影機530. . . CCD camera
540．．．管透鏡540. . . Tube lens
550．．．物鏡550. . . Objective lens
560．．．基材560. . . Substrate
600．．．腔室600. . . Chamber
700．．．剩餘氣體排出單元700. . . Residual gas discharge unit
710．．．材料收集器710. . . Material collector
720．．．熱處理部720. . . Heat treatment department
730、740．．．過濾器730, 740. . . filter
750．．．幫浦750. . . Pump
C．．．腔室C. . . Chamber
L．．．燈L. . . light
L1~L3．．．燈L1~L3. . . light
Q1~Q2．．．雷射光束產生器Q1~Q2. . . Laser beam generator
S．．．分束器S. . . Beam splitter
S1~S7．．．步驟S1~S7. . . step
T1~T6．．．步驟T1~T6. . . step
由連結隨附圖式的發明詳述當可益發明白本發明之上述和其他目標、特徵與優點，其中：The above and other objects, features and advantages of the present invention will become apparent from the <RTIgt;
第1圖為根據本發明之一實施例之修復半色調遮罩之製程的流程圖；1 is a flow chart of a process for repairing a halftone mask according to an embodiment of the present invention;
第2圖為根據本發明之實施例之製程中的圖案匹配步驟的流程圖；2 is a flow chart showing a pattern matching step in a process according to an embodiment of the present invention;
第3圖為根據本發明之一實施例之包括修復系統中之原料供應步驟之修復製程的流程圖；3 is a flow chart of a repair process including a raw material supply step in a repair system according to an embodiment of the present invention;
第4和5圖為根據本發明之一實施例的用於執行修復製程之系統的方塊圖；以及4 and 5 are block diagrams of a system for performing a repair process in accordance with an embodiment of the present invention;
第6和7圖顯示根據本發明之實施例之修復系統之光學系統的範例。Figures 6 and 7 show an example of an optical system of a repair system in accordance with an embodiment of the present invention.
100．．．載氣供應單元100. . . Carrier gas supply unit
110、111．．．閥110, 111. . . valve
120．．．通量控制器120. . . Flux controller
200．．．原料產生/供應單元200. . . Raw material production/supply unit
210．．．原料產生部210. . . Raw material production department
300．．．淨化氣體供應單元300. . . Purified gas supply unit
400．．．保護氣體供應單元400. . . Protective gas supply unit
500．．．光學系統500. . . Optical system
600．．．腔室600. . . Chamber
700．．．剩餘氣體排出單元700. . . Residual gas discharge unit
710．．．材料收集器710. . . Material collector
720．．．熱處理部720. . . Heat treatment department
730．．．過濾器730. . . filter
740．．．過濾器740. . . filter
750．．．幫浦750. . . Pump
Claims (27)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748975A (en) * | 1972-01-03 | 1973-07-31 | Rca Corp | Apparatus for and method of correcting a defective photomask |
| TW400566B (en) * | 1996-11-26 | 2000-08-01 | Dainippon Printing Co Ltd | Method for repairing photomask by removing residual defect in said photomask |
| TW201013303A (en) * | 2008-09-26 | 2010-04-01 | Charm & Ci Co Ltd | Apparatus and method for repairing a mask |
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2010
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3748975A (en) * | 1972-01-03 | 1973-07-31 | Rca Corp | Apparatus for and method of correcting a defective photomask |
| TW400566B (en) * | 1996-11-26 | 2000-08-01 | Dainippon Printing Co Ltd | Method for repairing photomask by removing residual defect in said photomask |
| TW201013303A (en) * | 2008-09-26 | 2010-04-01 | Charm & Ci Co Ltd | Apparatus and method for repairing a mask |
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