TWI461302B - A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold - Google Patents
A hydrophobic layer, a method of making the same, a method for producing a hydrophobic layer, and a mold Download PDFInfo
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Description
本發明是有關於一種疏水層，特別是指一種抗化性佳且耐高溫的疏水層。The invention relates to a hydrophobic layer, in particular to a hydrophobic layer which is excellent in chemical resistance and high temperature resistance.
物品的親水性或疏水性可藉由調整物品表面的粗糙度或表面能而加以控制。例如中華民國證書號第I334879號專利即提出一種疏水層及其製法，將該疏水層製作於物品的表面，可藉由表面粗糙度的提升以及表面能的降低，而呈現疏水效果。The hydrophilicity or hydrophobicity of the article can be controlled by adjusting the roughness or surface energy of the surface of the article. For example, the Republic of China Certificate No. I334879 patent proposes a hydrophobic layer and a method for preparing the same, which can be formed on the surface of an article by a surface effect, and can exhibit a hydrophobic effect by an increase in surface roughness and a reduction in surface energy.
但是一般物品於加工製造時，經常需要經過酸、鹼、有機溶液處理，或施以高溫製程，因此需要一種對酸、鹼、有機溶液的耐受性佳，且能承受高溫加熱的疏水層，以提升疏水層在物品製作過程或使用上的穩定性。However, general articles are often processed by acid, alkali, organic solution or high-temperature process during processing, so a hydrophobic layer that is resistant to acids, alkalis, and organic solutions and can withstand high temperature heating is required. To enhance the stability of the hydrophobic layer in the production process or use of the article.
因此，本發明之目的，即在提供一種具有優良疏水性，且對酸、鹼、有機溶液的耐受性佳，並能承受高溫加熱的疏水層及其製作方法。Accordingly, it is an object of the present invention to provide a hydrophobic layer which is excellent in hydrophobicity, has good resistance to acids, alkalis, and organic solutions, and can withstand high-temperature heating, and a method for producing the same.
於是，本發明疏水層，形成於一基材表面。該疏水層的製作方法，包含以下步驟：(A)製備一基材；(B)產生一反應氣體，該反應氣體主要成分為揮發態之烷基矽烷分子；(C)施加該反應氣體於該基材的一表面，並於對應該反應氣體與該基材處施以一電漿；及(D)形成一疏水層於該基材的該表面。Thus, the hydrophobic layer of the present invention is formed on the surface of a substrate. The method for preparing the hydrophobic layer comprises the steps of: (A) preparing a substrate; (B) generating a reaction gas, the main component of the reaction gas is a volatile alkyl decane molecule; (C) applying the reaction gas to the a surface of the substrate, and a plasma is applied to the corresponding reaction gas and the substrate; and (D) a hydrophobic layer is formed on the surface of the substrate.
較佳地，該基材的材質選自半導體材料、玻璃、金屬、塑膠、橡膠、高分子聚合物、陶瓷材料、纖維材料、岩石、土質材料、膠結性材料及塗料所組成的群組。Preferably, the material of the substrate is selected from the group consisting of semiconductor materials, glass, metals, plastics, rubber, high molecular polymers, ceramic materials, fiber materials, rocks, earth materials, cementitious materials, and coatings.
較佳地，於步驟(B)該反應氣體是藉由通入一前驅氣體並與一反應溶液之揮發氣體混合而成，該前驅氣體為氮氣，該反應溶液主要成分為液態之烷基矽烷分子。Preferably, in the step (B), the reaction gas is obtained by mixing a precursor gas and mixing with a volatile gas of a reaction solution, the precursor gas is nitrogen, and the main component of the reaction solution is a liquid alkyl decane molecule. .
較佳地，於步驟(C)該電漿是由一電漿單元產生；該電漿單元包括一腔體及一連通於該腔體的噴管；步驟(C)中施以該電漿的細步驟為：通入一用以產生該電漿的製程氣體於該腔體，且施加一電壓於該噴管，使流通於該噴管中的該製程氣體解離產生該電漿，並讓該電漿從該噴管遠離該腔體的一管口導出而施加於該反應氣體與該基材。Preferably, in step (C), the plasma is generated by a plasma unit; the plasma unit includes a cavity and a nozzle connected to the cavity; and the plasma is applied in the step (C) The fine step is: introducing a process gas for generating the plasma into the cavity, and applying a voltage to the nozzle, dissociating the process gas flowing in the nozzle to generate the plasma, and allowing the The plasma is discharged from the nozzle away from a nozzle of the cavity and applied to the reaction gas and the substrate.
另一方面，步驟(C)中施以該電漿的細步驟也可以是通入一製程氣體及該反應氣體於該腔體，且施加一電壓於該噴管，使流通於該噴管中的該製程氣體與該反應氣體解離產生該電漿，並讓該電漿與該反應氣體從該噴管遠離該腔體的一管口導出而施加於該基材。On the other hand, the fine step of applying the plasma in the step (C) may also be: introducing a process gas and the reaction gas into the cavity, and applying a voltage to the nozzle to circulate in the nozzle. The process gas is dissociated from the reaction gas to produce the plasma, and the plasma and the reaction gas are led out from the nozzle away from a nozzle of the cavity and applied to the substrate.
進一步來說，該製程氣體為壓力至少5公斤/平方公分的乾燥潔淨空氣。Further, the process gas is dry clean air having a pressure of at least 5 kg/cm 2 .
較佳地，該噴管與該基材的距離為5至30釐米。Preferably, the nozzle is at a distance of 5 to 30 cm from the substrate.
較佳地，該疏水層主要由矽及氧構成。Preferably, the hydrophobic layer consists essentially of helium and oxygen.
較佳地，該步驟(A)還在該基材施予一部分覆蓋該表面的圖案層；該步驟(D)中所形成的該疏水層覆蓋該 圖案層以及該基材未受該圖案層覆蓋的部分表面；步驟(D)之後還包含一步驟(E)去除該圖案層以及覆蓋於該圖案層上的疏水層，而形成一圖案化的疏水層。Preferably, the step (A) further applies a portion of the pattern covering the surface to the substrate; the hydrophobic layer formed in the step (D) covers the layer a pattern layer and a portion of the surface of the substrate not covered by the pattern layer; step (D) further comprising a step (E) of removing the pattern layer and a hydrophobic layer overlying the pattern layer to form a patterned hydrophobic layer Floor.
進一步來說，該圖案層的材料為感光之光阻；步驟(E)是藉由一有機溶劑去除該圖案層並同時剝離該圖案層上的疏水層。Further, the material of the pattern layer is a photosensitive photoresist; the step (E) is to remove the pattern layer by an organic solvent and simultaneously peel off the hydrophobic layer on the pattern layer.
較佳地，該疏水層的厚度為300奈米至500微米。Preferably, the hydrophobic layer has a thickness of from 300 nanometers to 500 micrometers.
本發明的另一目的，在提供一種使用前述疏水層的物品。Another object of the present invention is to provide an article using the aforementioned hydrophobic layer.
於是，本發明具有疏水層的物品，包含一基材及一疏水層。其中，該基材的材質選自半導體材料、玻璃、金屬、塑膠、橡膠、高分子聚合物、陶瓷材料、纖維材料、岩石、土質材料、膠結性材料及塗料所組成的群組。該疏水層由前述製作方法製成。Thus, the article of the present invention having a hydrophobic layer comprises a substrate and a hydrophobic layer. The material of the substrate is selected from the group consisting of semiconductor materials, glass, metal, plastic, rubber, high molecular polymer, ceramic material, fiber material, rock, earth material, cement material and paint. The hydrophobic layer is made by the aforementioned production method.
本發明的再一目的，在提供一種模具的製作方法，該模具是依據疏水層而對應製成。Still another object of the present invention is to provide a method of producing a mold which is produced in accordance with a water repellent layer.
於是，本發明模具的製作方法，包含以下步驟：(A)製備一疏水層，該疏水層以前述製作方法製成；(B)藉由電鑄技術於該疏水層的表面形成一金屬層，該金屬層連接於該疏水層的表面完全貼合於該疏水層對應的表面；及(C)分離該金屬層。Thus, the method for fabricating the mold of the present invention comprises the steps of: (A) preparing a hydrophobic layer which is formed by the above-mentioned manufacturing method; and (B) forming a metal layer on the surface of the hydrophobic layer by electroforming. The metal layer is attached to the surface of the hydrophobic layer to completely conform to the corresponding surface of the hydrophobic layer; and (C) the metal layer is separated.
較佳地，步驟(B)包含以下細步驟：(B1)藉由物理氣相沉積技術或金屬鍍膜技術覆蓋一金屬起始層於該疏水層的表面；及(B2)藉由電化學沉積技術於該金屬起始層 上形成該金屬層。Preferably, step (B) comprises the following fine steps: (B1) covering a metal starting layer on the surface of the hydrophobic layer by physical vapor deposition or metallization; and (B2) by electrochemical deposition Starting layer of the metal The metal layer is formed thereon.
本發明之功效在於：由揮發態之烷基矽烷分子經電漿處理而形成的疏水層具有優良的疏水性、抗化性及耐溫性，而提升疏水層在物品製造加工過程的穩定性，並提升其耐用程度。此外，由疏水層對應製作的模具能將該疏水層的粗糙表面形貌轉印至一可固化之塑性材料，而增進該塑性材料的疏水性。The effect of the invention is that the hydrophobic layer formed by the plasma treatment of the volatile alkyl decane molecules has excellent hydrophobicity, chemical resistance and temperature resistance, and enhances the stability of the hydrophobic layer during the manufacturing process of the article. And improve its durability. In addition, the mold made by the hydrophobic layer can transfer the rough surface topography of the hydrophobic layer to a curable plastic material to enhance the hydrophobicity of the plastic material.
有關本發明之前述及其他技術內容、特點與功效，在以下配合參考圖式之二個較佳實施例的詳細說明中，將可清楚地呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings.
參閱圖1至圖2為本發明疏水層12及其製作方法的一較佳實施例。1 to 2 show a preferred embodiment of the hydrophobic layer 12 of the present invention and a method of fabricating the same.
步驟S1：準備一物品1，該物品1可以是行動電話、積體電路晶片、玻璃瓶等，但不以此為限。物品1具有一基材11，基材11的材質選自半導體材料、玻璃、金屬、塑膠、橡膠、高分子聚合物、陶瓷材料、纖維材料、岩石(如大理石、花崗石)、土質材料(如磚、瓦、黏土)、膠結性材料(如水泥、混凝土、瀝青及石膏)及塗料(如油漆及亮光漆)所組成的群組。Step S1: Prepare an item 1, which may be a mobile phone, an integrated circuit chip, a glass bottle, etc., but is not limited thereto. The article 1 has a substrate 11 made of a semiconductor material, glass, metal, plastic, rubber, polymer, ceramic material, fiber material, rock (such as marble, granite), earth material ( Groups of bricks, tiles, clay, cementitious materials (such as cement, concrete, asphalt, and gypsum) and coatings (such as paints and varnishes).
執行下一步驟前，可視需要對基材11進行表面清潔處理。舉例來說，若基材11的材質為矽，可透過RCA(Radio corporation of America)清潔技術去除基材11表面的有機物、氧化物及金屬離子等不潔物質。但上述基材 11的清潔步驟並非必要的執行步驟。The substrate 11 may be surface cleaned as needed before performing the next step. For example, if the material of the substrate 11 is 矽, unclean substances such as organic substances, oxides, and metal ions on the surface of the substrate 11 can be removed by RCA (Radio Corporation of America) cleaning technology. But the above substrate The cleaning step of 11 is not a necessary step.
步驟S2：產生一主要成分為揮發態之烷基矽烷分子的反應氣體3。該反應氣體3是藉由通入一前驅氣體並與一反應溶液之揮發氣體混合而成。此處，該前驅氣體為氮氣，該反應溶液主要成分為液態之烷基矽烷分子Step S2: generating a reaction gas 3 in which a main component is a volatile alkyl decane molecule. The reaction gas 3 is formed by introducing a precursor gas and mixing it with a volatile gas of a reaction solution. Here, the precursor gas is nitrogen, and the main component of the reaction solution is a liquid alkyl decane molecule.
具體來說，將包含液態烷基矽烷分子的反應溶液盛裝在一密閉容器中(圖中未繪製)，並通入氮氣於該密閉容器，揮發的氣態烷基矽烷分子與氮氣混合後即為用以形成疏水層12的反應氣體3。Specifically, the reaction solution containing the liquid alkyl decane molecule is contained in a closed container (not shown), and nitrogen gas is introduced into the closed container, and the volatilized gaseous alkyl decane molecule is mixed with nitrogen gas to be used. To form the reaction gas 3 of the hydrophobic layer 12.
要特別說明的是，本實施例使用的前驅氣體為氮氣，但不以此為限，也可以是氬氣、大氣等氣體，只要不與氣態烷基矽烷分子產生化學反應即可。It should be particularly noted that the precursor gas used in the present embodiment is nitrogen gas, but not limited thereto, and may be a gas such as argon gas or atmosphere, as long as it does not chemically react with the gaseous alkyl decane molecule.
步驟S3：通過一導氣管22施加該反應氣體3於基材11的一表面，並於對應於反應氣體3與基材11接觸處施以一電漿5，而使反應氣體3解離、改質並沉積薄膜於基材11表面，而形成疏水層12。Step S3: applying the reactive gas 3 to a surface of the substrate 11 through an air guiding tube 22, and applying a plasma 5 corresponding to the contact of the reactive gas 3 with the substrate 11, thereby dissociating and modifying the reactive gas 3 A film is deposited on the surface of the substrate 11 to form a hydrophobic layer 12.
此處，電漿5是由一電漿單元21產生。電漿單元21包括一腔體211及一連通於該腔體211的噴管212。通入一用以產生電漿5的製程氣體4於腔體211後，施加一電壓於噴管212，使流通於噴管212中的製程氣體4解離產生電漿5，該電漿5從噴管212遠離該腔體211的一管口213導出並施加於反應氣體3與基材11接觸處。Here, the plasma 5 is produced by a plasma unit 21. The plasma unit 21 includes a cavity 211 and a nozzle 212 connected to the cavity 211. After a process gas 4 for generating the plasma 5 is introduced into the cavity 211, a voltage is applied to the nozzle 212 to dissociate the process gas 4 flowing through the nozzle 212 to generate a plasma 5, which is sprayed from the plasma 5 The tube 212 is led away from a nozzle 213 of the cavity 211 and applied to the contact of the reaction gas 3 with the substrate 11.
上述過程中，製程氣體4為壓力至少5公斤/平方公分的乾燥潔淨空氣(Clean dry air，CDA)，且噴管212與 基材11的距離為5至30釐米，具體數值視需要而定。In the above process, the process gas 4 is a dry clean air (CDA) having a pressure of at least 5 kg/cm 2 , and the nozzle 212 is The distance of the substrate 11 is 5 to 30 cm, and specific values are determined as needed.
要特別說明的是，上述反應氣體3也可以直接通入電漿單元21的腔體211，並與製程氣體4混合後透過高電壓解離產生電漿5，而在基材11表面形成疏水層12。It should be particularly noted that the above-mentioned reaction gas 3 can also be directly introduced into the cavity 211 of the plasma unit 21, mixed with the process gas 4, and then dissociated by high voltage to generate the plasma 5, and a hydrophobic layer 12 is formed on the surface of the substrate 11.
步驟S4：疏水層12經由步驟S3而形成於基材11表面。其中，疏水層12的厚度由施加反應氣體3與電漿5的時間決定，較佳的厚度為300奈米至500微米，但不以此為限。Step S4: The hydrophobic layer 12 is formed on the surface of the substrate 11 via the step S3. The thickness of the hydrophobic layer 12 is determined by the time during which the reactive gas 3 and the plasma 5 are applied, and the thickness is preferably from 300 nm to 500 μm, but not limited thereto.
參照表一為疏水層12的特性檢測結果。由表一可知，疏水層12主要由矽及氧構成，其表面的粗糙程度以及其疏水基有效增加疏水性，且於酸、鹼、有機溶液與高 溫處理後仍具有優良之疏水性，而能增進基材11的表面疏水性。Refer to Table 1 for the characteristic test results of the hydrophobic layer 12. As can be seen from Table 1, the hydrophobic layer 12 is mainly composed of niobium and oxygen, and the surface roughness and the hydrophobic group thereof effectively increase the hydrophobicity, and are high in acid, alkali, organic solution and high. After the temperature treatment, it still has excellent hydrophobicity, and the surface hydrophobicity of the substrate 11 can be improved.
參照圖3。舉例來說，物品1可以是一個包含一封裝殼13及多根接腳14的積體電路晶片。一般積體電路晶片會藉由銲錫而固定於一電路板(圖中未繪製)，在焊錫迴焊(reflow)的加熱過程中，位於接腳14底端的焊錫表面張力降低，並藉由毛細現象沿接腳14向上爬升至封裝殼13處，而導致銲錫損傷封裝殼13的潛在風險，此即為「爬錫」現象。若藉由前述方法將疏水層12分別製作於接腳14介於其底端與封裝殼13之間的部位，由於疏水層12具有高溫耐受性且銲錫無法附著於疏水層12表面，而能在焊錫迴焊(reflow)的加熱過程中避免爬錫現象，以提升製程良率。Refer to Figure 3. For example, the article 1 can be an integrated circuit chip including a package case 13 and a plurality of pins 14. Generally, the integrated circuit chip is fixed to a circuit board by soldering (not shown). During the solder reflow heating process, the surface tension of the solder at the bottom end of the pin 14 is reduced, and by capillary phenomenon. As the pin 14 climbs up to the package casing 13, the solder risks damage the package casing 13, which is a phenomenon of "climbing". If the hydrophobic layer 12 is separately formed between the bottom end of the pin 14 and the package case 13 by the foregoing method, since the hydrophobic layer 12 has high temperature resistance and the solder cannot adhere to the surface of the hydrophobic layer 12, Avoid soldering during the heating process of solder reflow to improve process yield.
參照圖4。此外，物品1也可以是一個行動電話。將疏水層12製作於行動電話表面，藉由其疏水性可增進行動電話的防水程度並保持其清潔。Refer to Figure 4. In addition, item 1 can also be a mobile phone. The hydrophobic layer 12 is formed on the surface of the mobile phone, and its hydrophobicity enhances the waterproofness of the mobile phone and keeps it clean.
要特別說明的是，上述積體電路晶片、行動電話僅用於舉例說明，不能以此限制疏水層12的應用領域，只要物品1的基材11材質匹配於疏水層12即可。It should be particularly noted that the above-described integrated circuit chip and mobile phone are for illustrative purposes only, and the application field of the hydrophobic layer 12 cannot be limited thereto, as long as the material of the substrate 11 of the article 1 is matched to the hydrophobic layer 12.
參照圖1、圖5與圖6。本發明第二較佳實施例與第一較佳實施例的差異在於，該疏水層12還進一步藉由半導體技術界定出對應的形狀，詳細內容說明如下。1 , 5 and 6 are referred to. The difference between the second preferred embodiment of the present invention and the first preferred embodiment is that the hydrophobic layer 12 is further defined by a semiconductor technology, and the details are as follows.
步驟F1：參照圖5a，藉由微影技術(Photolithography)在基材11表面形成一部分覆蓋該表面 的圖案層15。此處，圖案層15的材質為感光之光阻。Step F1: Referring to FIG. 5a, a part of the surface of the substrate 11 is covered by the photolithography to cover the surface. Pattern layer 15. Here, the material of the pattern layer 15 is a photosensitive photoresist.
步驟F2：參照圖5b，藉由前述製作疏水層12的方法，在圖案層15以及基材11未受圖案層15覆蓋的部分表面覆蓋一層疏水層12。Step F2: Referring to FIG. 5b, a portion of the surface of the pattern layer 15 and the substrate 11 not covered by the pattern layer 15 is covered with a hydrophobic layer 12 by the method of producing the hydrophobic layer 12 as described above.
步驟F3：藉由一有機溶劑去除圖案層15並同時剝離圖案層15上的疏水層12。此處，該有機溶劑為丙酮，但不以此為限，只要能去除圖案層15即可。Step F3: The pattern layer 15 is removed by an organic solvent and the hydrophobic layer 12 on the pattern layer 15 is simultaneously peeled off. Here, the organic solvent is acetone, but it is not limited thereto as long as the pattern layer 15 can be removed.
步驟F4：參照圖5c，完成一藉由圖案層15而界定出特定形狀的圖案化疏水層12。Step F4: Referring to Figure 5c, a patterned hydrophobic layer 12 of a particular shape is defined by the pattern layer 15.
如前述說明，依據步驟S1~S3可製作出抗化性及耐溫性佳的疏水層12，且由步驟F1~F4可進一步藉由半導體製程技術製作出圖案化的疏水層12，而增進疏水層12的應用範圍。As described above, the hydrophobic layer 12 having good chemical resistance and temperature resistance can be produced according to the steps S1 to S3, and the patterned hydrophobic layer 12 can be further formed by the semiconductor process technology from the steps F1 to F4, and the hydrophobic layer 12 is enhanced. The scope of application.
除此之外，參閱圖7至圖9，由於疏水層12具有粗糙表面(如圖7)而增進其疏水性，因此本發明還提供一種複製疏水層12表面形貌的模具6。藉由該模具6於可固化之塑性材料(如聚二甲基矽氧烷，PDMS)的表面進行壓印，能將疏水層12的表面形貌轉印至塑性材料的表面，而增進該塑性材料的疏水性。In addition, referring to Figs. 7 to 9, since the hydrophobic layer 12 has a rough surface (Fig. 7) to enhance its hydrophobicity, the present invention also provides a mold 6 for replicating the surface topography of the hydrophobic layer 12. By embossing the surface of the mold 6 on a curable plastic material (such as polydimethyl siloxane, PDMS), the surface topography of the hydrophobic layer 12 can be transferred to the surface of the plastic material to enhance the plasticity. The hydrophobicity of the material.
以下為製作模具6的步驟。The following is the step of making the mold 6.
步驟M1：參照圖9a，以前述步驟S1~S3或步驟F1~F4製備一疏水層12。Step M1: Referring to FIG. 9a, a hydrophobic layer 12 is prepared by the aforementioned steps S1 to S3 or steps F1 to F4.
步驟M2：於疏水層12表面形成模具6(如圖9b)。Step M2: Forming a mold 6 on the surface of the hydrophobic layer 12 (Fig. 9b).
此步驟是以精密電鑄技術(Electroforming)製作模 具6。具體來說，先在疏水層12的表面121藉由物理氣相沉積技術(例如蒸鍍技術或濺鍍技術)或其他金屬鍍膜技術覆蓋一層金屬起始層(Seed layer)。舉例來說，該金屬起始層可以是鉻/銅或鈦/銅等雙層金屬，但不以此為限。This step is based on precision electroforming (Electroforming) With 6. Specifically, a layer of a metal seed layer is first coated on the surface 121 of the hydrophobic layer 12 by physical vapor deposition techniques (eg, evaporation techniques or sputtering techniques) or other metallization techniques. For example, the metal starting layer may be a double-layer metal such as chromium/copper or titanium/copper, but is not limited thereto.
接著，藉由電化學沉積技術(Electrochemical deposition)於該金屬起始層上沉積一層較厚的金屬層，而形成模具6。模具6的材質可以是鎳、鎳鈷合金或銅，但不以此為限。Next, a thick metal layer is deposited on the metal starting layer by Electrochemical Deposition to form the mold 6. The material of the mold 6 may be nickel, nickel cobalt alloy or copper, but not limited thereto.
在電化學沉積的過程中，模具6是從疏水層12的表面121逐漸沉積金屬而形成，因此模具6的表面61形貌互補於疏水層12的表面121，而能執行轉印的功能。In the process of electrochemical deposition, the mold 6 is formed by gradually depositing metal from the surface 121 of the hydrophobic layer 12, so that the surface 61 of the mold 6 is complementary in appearance to the surface 121 of the hydrophobic layer 12, and the transfer function can be performed.
步驟M3：將模具6從疏水層12的表面121分離，而製得模具6(如圖9c)。Step M3: The mold 6 is separated from the surface 121 of the hydrophobic layer 12 to produce a mold 6 (Fig. 9c).
將模具6的表面61於塑性材料表面進行壓印、固化後，塑性材料的表面會形成互補於模具6之表面61的形貌，此作法的功效相當於將疏水層12之表面121的形貌轉印至塑性材料的表面，而使該塑性材料藉由表面粗糙度的增加而提升其疏水性。After the surface 61 of the mold 6 is embossed and solidified on the surface of the plastic material, the surface of the plastic material forms a topography complementary to the surface 61 of the mold 6. The effect of this method is equivalent to the appearance of the surface 121 of the hydrophobic layer 12. Transfer to the surface of the plastic material to increase the hydrophobicity of the plastic material by increasing the surface roughness.
綜上所述，藉由揮發態之烷基矽烷分子經電漿5處理而形成的疏水層12具有優良的疏水性、抗化性及高溫耐受性，而能提升疏水層12在各式物品1的製造過程中的穩定性，並提升其耐用程度。此外，由於疏水層12具有優良的抗化性，而能藉由半導體技術製作出圖案化的 疏水層12，以增進其應用範圍。再者，由疏水層12對應製作的模具6能將疏水層12的粗糙表面形貌轉印至可固化之塑性材料的表面，而進一步增進該塑性材料的疏水性。In summary, the hydrophobic layer 12 formed by treating the alkyl decane molecules in a volatile state by the plasma 5 has excellent hydrophobicity, chemical resistance and high temperature tolerance, and can enhance the hydrophobic layer 12 in various articles. The stability of the manufacturing process of 1 and enhance its durability. In addition, since the hydrophobic layer 12 has excellent chemical resistance, it can be patterned by semiconductor technology. The hydrophobic layer 12 is used to enhance its application range. Furthermore, the mold 6 produced by the hydrophobic layer 12 can transfer the rough surface topography of the hydrophobic layer 12 to the surface of the curable plastic material, thereby further enhancing the hydrophobicity of the plastic material.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
1‧‧‧物品1‧‧‧ Items
11‧‧‧基材11‧‧‧Substrate
12‧‧‧疏水層12‧‧‧hydrophobic layer
121‧‧‧表面121‧‧‧ surface
13‧‧‧封裝殼13‧‧‧Packing
14‧‧‧接腳14‧‧‧ pins
15‧‧‧圖案層15‧‧‧pattern layer
21‧‧‧電漿單元21‧‧‧Plastic unit
211‧‧‧腔體211‧‧‧ cavity
212‧‧‧噴管212‧‧‧ nozzle
213‧‧‧管口213‧‧‧ mouth
22‧‧‧導氣管22‧‧‧ air duct
3‧‧‧反應氣體3‧‧‧Reactive gas
4‧‧‧製程氣體4‧‧‧Process Gas
5‧‧‧電漿5‧‧‧ Plasma
6‧‧‧模具6‧‧‧Mold
61‧‧‧表面61‧‧‧ surface
S1~S4‧‧‧流程步驟S1~S4‧‧‧ Process steps
F1~F4‧‧‧流程步驟F1~F4‧‧‧ process steps
M1~M3‧‧‧流程步驟M1~M3‧‧‧ process steps
圖1是一示意圖，說明本發明疏水層之製作方法的一較佳實施例；圖2是該疏水層的製作流程圖；圖3及圖4是該疏水層的應用示意圖；圖5是製作一圖案化疏水層的示意圖；圖6是製作該圖案化疏水層的流程圖；圖7是該疏水層的電顯圖；圖8是由該疏水層製作一模具的流程圖；及圖9是製作該模具的示意圖。1 is a schematic view showing a preferred embodiment of a method for fabricating a hydrophobic layer of the present invention; FIG. 2 is a flow chart for fabricating the hydrophobic layer; FIG. 3 and FIG. 4 are schematic diagrams of application of the hydrophobic layer; Schematic diagram of the patterned hydrophobic layer; FIG. 6 is a flow chart for fabricating the patterned hydrophobic layer; FIG. 7 is an electrical display of the hydrophobic layer; FIG. 8 is a flow chart for fabricating a mold from the hydrophobic layer; A schematic of the mold.
S1~S4‧‧‧流程步驟S1~S4‧‧‧ Process steps
Claims (20)
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030082924A1 (en) * | 2001-10-25 | 2003-05-01 | Ebrahim Andideh | Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface |
| TW590997B (en) * | 1999-05-15 | 2004-06-11 | Merck Patent Gmbh | Process and composition for the production of hydrophobic layers on fluoride layers |
| TW200827415A (en) * | 2006-12-26 | 2008-07-01 | Ind Tech Res Inst | Surface treatment composition, a material and a hydrophobic film fabricated from the same |
| TW200929359A (en) * | 2007-10-05 | 2009-07-01 | Nec Electronics Corp | Method for manufacturing hydrophobized porous membrane |
| TWI315646B (en) * | 2003-09-25 | 2009-10-01 | Ritdisplay Corp | Organic electroluminescent panel with hydrophobic layer |
| US8178447B1 (en) * | 2010-11-29 | 2012-05-15 | National Taiwan University Of Science And Technology | Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW590997B (en) * | 1999-05-15 | 2004-06-11 | Merck Patent Gmbh | Process and composition for the production of hydrophobic layers on fluoride layers |
| US20030082924A1 (en) * | 2001-10-25 | 2003-05-01 | Ebrahim Andideh | Method of making a semiconductor device by converting a hydrophobic surface of a dielectric layer to a hydrophilic surface |
| TWI315646B (en) * | 2003-09-25 | 2009-10-01 | Ritdisplay Corp | Organic electroluminescent panel with hydrophobic layer |
| TW200827415A (en) * | 2006-12-26 | 2008-07-01 | Ind Tech Res Inst | Surface treatment composition, a material and a hydrophobic film fabricated from the same |
| TW200929359A (en) * | 2007-10-05 | 2009-07-01 | Nec Electronics Corp | Method for manufacturing hydrophobized porous membrane |
| US8178447B1 (en) * | 2010-11-29 | 2012-05-15 | National Taiwan University Of Science And Technology | Methods of forming hydrophobic silicon dioxide layer and forming organic thin film transistor |
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