TWI459454B - Dicing die bonding film and dicing method - Google Patents
Dicing die bonding film and dicing method Download PDFInfo
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- TWI459454B TWI459454B TW097146397A TW97146397A TWI459454B TW I459454 B TWI459454 B TW I459454B TW 097146397 A TW097146397 A TW 097146397A TW 97146397 A TW97146397 A TW 97146397A TW I459454 B TWI459454 B TW I459454B
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
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- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Description
本發明係關於一種切割黏晶膜(dicing die bonding film),其能於任何的半導體封裝製程中保持優異的可加工性以及信賴性,如黏著性、隙縫填充性、以及取出便利性,且可控制切割步驟中毛邊以及污染的情形發生。此外,本發明亦關於一種切割方法。The present invention relates to a dicing die bonding film which can maintain excellent workability and reliability in any semiconductor packaging process, such as adhesion, gap filling, and ease of take-out, and Controls the occurrence of burrs and contamination in the cutting step. Furthermore, the invention also relates to a cutting method.
普遍而言,半導體晶片的製程中,於拋光步驟之後會包括一於晶圓上形成精細圖案以及將晶圓進行封裝的步驟,而製得一標準的產物。Generally, in the process of semiconductor wafers, a step of forming a fine pattern on the wafer and encapsulating the wafer after the polishing step is performed to produce a standard product.
其中,晶圓封裝的步驟包含了:一晶圓檢查步驟,係對半導體晶片缺陷進行檢查;一切割步驟,以將一晶圓切割成各個晶片;一黏晶步驟,係將經切割的晶片黏至一電路板或一引線框架的載盤上;一打線步驟,係以一電連接單元(如電線)將電路板或引線框架的線路圖案與半導體晶片的晶片墊連接;一成模步驟,係將半導體晶片外部以一封膠覆蓋,以提供保護內部線路及其他元件的功能;一修整步驟,係將一連接於引線與引線之間的壩條(dambar)切斷;一成形步驟,係將引線彎折成預計的形狀;以及一完成產品檢查步驟,將一完成的產品進行缺陷檢查。The step of wafer packaging comprises: a wafer inspection step for inspecting semiconductor wafer defects; a cutting step for cutting a wafer into individual wafers; and a die bonding step for adhering the cut wafers To a circuit board or a carrier of a lead frame; a wire bonding step of connecting a circuit pattern of the circuit board or the lead frame to the wafer pad of the semiconductor wafer by an electrical connection unit (such as a wire); The outside of the semiconductor wafer is covered with a glue to provide protection for internal wiring and other components; a trimming step is to cut a dambar connected between the lead and the lead; a forming step The lead is bent into a desired shape; and a finished product inspection step is performed to perform a defect inspection of the finished product.
此外,於該切割步驟中,晶圓係經由一鑽石砂輪刀及其類似工具切割成一特定的厚度。在此,為了對晶圓進行固定,會將用於切割黏晶之黏膜,於一適當的溫度條件下壓合在晶圓的背面(沒有形成圖案的那面)。然而,當在上述條件下進行切割時,若有過大的應力或機械性的撞擊產生,則會造成晶圓受損並產生碎片,更會產生毛邊而造成圖案受污染。由於近年來受到封裝體微型化的需求,晶圓所要求的厚度也隨之減小,因此為了增加產出效率,切割的條件變得越來越嚴苛,因而時常發生上述問題。特別當晶圓需求的厚度變薄時,即使從前某種程度不會構成問題的毛邊形成在晶片上時,仍會污染了圖案而造成半導體晶片產生缺陷。Further, in the cutting step, the wafer is cut into a specific thickness by a diamond wheel cutter and the like. Here, in order to fix the wafer, the adhesive film for cutting the die bond is pressed against the back surface of the wafer (the side on which the pattern is not formed) under an appropriate temperature condition. However, when cutting under the above conditions, if excessive stress or mechanical impact occurs, the wafer is damaged and fragments are generated, and burrs are generated to cause contamination of the pattern. Due to the demand for miniaturization of the package in recent years, the required thickness of the wafer is also reduced. Therefore, in order to increase the output efficiency, the cutting conditions become more and more severe, and the above problems often occur. In particular, when the thickness of the wafer is required to be thin, even if a burr which does not pose a problem to some extent is formed on the wafer, the pattern is contaminated and the semiconductor wafer is defective.
大部分傳統上降低此毛邊問題的方法,係以調整切割膜以及黏晶膜的物理特性來處理。然而,當經由改變上述薄膜的物理特性來減少毛邊發生時,某些物理特性如黏晶步驟以及切割步驟中的信賴性,則會相對地受到限制。Most of the traditional methods of reducing this burr problem are to adjust the physical properties of the dicing film and the viscous film. However, when the occurrence of burrs is reduced by changing the physical properties of the above film, certain physical properties such as the die bonding step and the reliability in the cutting step are relatively limited.
日本專利公開號2007-19478中揭露有一種方法,其係為一種切割過程中不具有背面研磨、且可防止晶圓碎片分散的切割技術,其利用控制晶圓切割時每一部位的切割深度,以及控制切割刀的高度使其在特定部位緩慢改變(升高)來完成。A method disclosed in Japanese Patent Laid-Open Publication No. 2007-19478 is a cutting technique which does not have back-grinding during cutting and prevents dispersion of wafer fragments, and utilizes a cutting depth for controlling each portion of the wafer during cutting. And to control the height of the cutter to slowly change (rise) at a specific location.
然而上述文獻中所揭露之方法中,如同傳統切割方法,切割的程度深及至切割膜的基膜深處。因此,須在黏晶膜(毛邊之主要組成)被完全切割的狀態下,進行擴張(延展)以及取出(pick-up)的步驟。在此,由於具有弱的黏附性質的黏晶膜毛邊由晶片散出,而造成晶片污染的問題。However, in the method disclosed in the above documents, as in the conventional cutting method, the degree of cutting is deep and deep into the base film of the dicing film. Therefore, the steps of expansion (expansion) and pick-up are performed in a state where the adhesive film (the main component of the burr) is completely cut. Here, since the burr of the accommodating film having weak adhesion properties is scattered by the wafer, the problem of wafer contamination is caused.
本發明係用以解決上述習知技術中所面臨的問題,且本發明之一目的係提供一種切割黏晶膜,其能於任何的半導體製程中皆保持優異的可加工性以及信賴性,如黏著性、隙縫填充性、以及取出便利性,且可控制切割步驟中毛邊以及污染的情形發生。此外,本發明亦提供一種切割方法。The present invention is to solve the problems faced by the above-mentioned prior art, and an object of the present invention is to provide a dicing die-cut film which can maintain excellent processability and reliability in any semiconductor process, such as Adhesion, gap filling, and ease of removal, and control of burrs and contamination in the cutting step. Further, the present invention also provides a cutting method.
為了解決上述問題,本發明係提供一種切割黏晶膜,其包括:一切割膜;以及一形成於該切割膜上之黏晶膜,其於25℃之拉伸模量(tensile modulus)為10至2,000MPa。In order to solve the above problems, the present invention provides a dicing die film comprising: a dicing film; and a viscous film formed on the dicing film, having a tensile modulus of 10 at 25 ° C To 2,000 MPa.
於本發明之該切割黏晶膜中,切割膜之伸長率較佳於100至2,000%的範圍內,且更佳於500至1,500%的範圍內。In the dicing die film of the present invention, the elongation of the dicing film is preferably in the range of 100 to 2,000%, and more preferably in the range of 500 to 1,500%.
為了解決上述問題,本發明更提供一種切割方法,係使用一切割黏晶膜,該切割黏晶膜係包括一切割膜,具有一基膜、以及一形成於該基膜上之壓敏膠黏層;以及一形成於該切割膜上之黏晶膜,該方法包括:一第一步驟,係將一晶圓黏著於該黏晶膜上;一第二步驟,係切割至該黏晶膜非完全切斷之深度;以及一第三步驟,係將切割黏晶膜延展以將黏晶膜完全分離。In order to solve the above problems, the present invention further provides a cutting method using a dicing die film, the dicing die film comprising a dicing film having a base film and a pressure sensitive adhesive formed on the base film a layer; and a die bond film formed on the dicing film, the method comprising: a first step of bonding a wafer to the die film; and a second step of cutting to the die film The depth of complete severing; and a third step is to extend the dicing die to completely separate the plexiglass film.
本發明之切割方法較佳係使用上述之切割黏晶膜。The cutting method of the present invention preferably uses the above-mentioned dicing die film.
此外,本發明之切割方法之第二步驟中,其切割完成深度較佳為黏晶膜厚度之50至99%,更佳為75至95%。Further, in the second step of the cutting method of the present invention, the depth of the cut is preferably from 50 to 99%, more preferably from 75 to 95%, of the thickness of the film.
再者,本發明之切割方法之第三步驟中,延展強度(expanding strength)較佳係調整為基膜於切割膜中之屈服強度(yield strength)之60至90%。Further, in the third step of the cutting method of the present invention, the expanding strength is preferably adjusted to 60 to 90% of the yield strength of the base film in the dicing film.
本發明之切割方法之延展步驟中,延展比例較佳係控制成超出該基膜於切割膜中之屈服伸長率(yield elongation);且延展比例較佳係控制成低於拉伸應變(tensile strain),此係切割膜之基膜之拉伸曲線(tensile curve)之屈服點(yield point)後,於起始時抗拉強度(tensile strength)再次升高的拉伸應變(tensile strain)的範圍。In the stretching step of the cutting method of the present invention, the elongation ratio is preferably controlled to exceed the yield elongation of the base film in the dicing film; and the elongation ratio is preferably controlled to be lower than the tensile strain (tensile strain) ), after the yield point of the tensile curve of the base film of the dicing film, the range of tensile strain at which the tensile strength is increased again at the beginning .
為了解決上述問題,本發明又提供一種切割方法,係使用一切割黏晶膜,該切割黏晶膜包括:一切割膜,其具有一聚烯烴膜(polyolefin film)、以及一形成於聚烯烴膜上之壓敏膠黏層;以及一形成於切割膜上之黏晶膜。此方法包括:一第一步驟,是將一晶圓黏著於該黏晶膜上;一第二步驟,是切割晶圓至黏晶膜非完全切斷之深度;以及一第三步驟,是將切割後之黏晶膜延展以將黏晶膜完全分離。In order to solve the above problems, the present invention further provides a cutting method using a dicing die film, the dicing die film comprising: a dicing film having a polyolefin film and a film formed on the polyolefin film a pressure sensitive adhesive layer thereon; and a die film formed on the dicing film. The method includes: a first step of adhering a wafer to the die film; a second step of cutting the wafer to a depth at which the die film is not completely cut; and a third step of The cut film is stretched to completely separate the die film.
此切割方法中,第三步驟中之延展強度(expanding strength)較佳為600至1,350gf。In this cutting method, the expanding strength in the third step is preferably from 600 to 1,350 gf.
再者,上述之切割方法中,第三步驟中之延展比例較佳為8至30%。Further, in the above cutting method, the elongation ratio in the third step is preferably from 8 to 30%.
根據本發明之切割黏晶膜以及切割方法,可降低切割步驟中的毛邊現象,並調整膜的物理特性以不受特定限制情形下最佳化黏著特性、取出特性以及填縫性。因此,於任何半導體封裝步驟中,可良好地維持加工性以及信賴性。According to the dicing die film and the cutting method of the present invention, the burr phenomenon in the cutting step can be reduced, and the physical properties of the film can be adjusted to optimize the adhesive property, the take-out property, and the caulking property without being particularly limited. Therefore, workability and reliability can be favorably maintained in any semiconductor packaging step.
本發明係關於一種切割黏晶膜,其包括一切割膜;以及一形成於該切割膜上之黏晶膜,其於25℃之拉伸模量(tensile modulus)為10至2,000MPa。本發明之特徵在於最佳化切割黏晶膜之拉伸性能。「拉伸性能」一詞係指一樣品(如,黏晶膜等)之特性,係以將樣品之二端固定並施以一軸向應力後,斷裂時應力以及變形曲線間的關係(拉伸曲線(tensile curve))來表示。本發明之切割黏晶膜使用於任何的半導體製程中,可保持優異的可加工性以及信賴性,如黏著性、隙縫填充性、以及取出便利性。本發明之切割黏晶膜可有效地使用於下述本發明之切割方法中。The present invention relates to a dicing die film comprising a dicing film; and a viscous film formed on the dicing film having a tensile modulus of from 10 to 2,000 MPa at 25 °C. The invention is characterized by optimizing the tensile properties of the diced die film. The term "tensile properties" refers to the characteristics of a sample (eg, a mucto film, etc.), which is the relationship between the stress and the deformation curve at the time of fracture after fixing the two ends of the sample and applying an axial stress. According to the tensile curve. The dicing die film of the present invention is used in any semiconductor process to maintain excellent processability and reliability such as adhesion, gap filling, and ease of take-out. The dicing die film of the present invention can be effectively used in the cutting method of the present invention described below.
以下將更詳盡地說明本發明之切割黏晶膜。The dicing die film of the present invention will be explained in more detail below.
本發明之特徵在於,黏晶膜於25℃之拉伸模量(tensile modulus)係被控制在10至2,000MPa。在此,拉伸模量(tensile modulus)是在25℃、拉伸速率為12.8mm/分鐘時,將薄膜進行拉伸測試所得到之數值。具體而言,本發明中樣品係切成50mm x 10mm(長x寬)大小,並且長邊方向是製膜過程中的塗佈方向,將樣品二端黏貼固定使長邊方向留下25mm的長度。接著,以12.8mm/分鐘的速率將該樣品拉伸並測量其拉伸模量(tensile modulus)。若測得之拉伸模量小於10Mpa,則於下述切割方法之延展步驟中沒有完全切開該薄膜,因此表示取出步驟可能並非順暢地進行。若大於2,000Mpa,則斷開的步驟中會引起許多的薄膜粉狀物,而表示晶片的圖案可能會受到污染。The present invention is characterized in that the tensile modulus of the die bond film at 25 ° C is controlled to be 10 to 2,000 MPa. Here, the tensile modulus is a value obtained by performing a tensile test on a film at a tensile rate of 12.8 mm/min at 25 °C. Specifically, in the present invention, the sample is cut into a size of 50 mm x 10 mm (length x width), and the longitudinal direction is the coating direction in the film forming process, and the two ends of the sample are adhered and fixed to leave a length of 25 mm in the longitudinal direction. . Next, the sample was stretched at a rate of 12.8 mm/min and its tensile modulus was measured. If the measured tensile modulus is less than 10 MPa, the film is not completely cut in the stretching step of the following cutting method, and thus the drawing step may not be smoothly performed. If it is more than 2,000 MPa, a lot of film powder is caused in the step of breaking, and the pattern indicating the wafer may be contaminated.
本發明之特徵在於上述之黏晶膜之拉伸模量可受到控制,且於某些情形中,切割膜的拉伸性能亦可受到控制。特別地,在此的切割膜係受控制使其伸長率較佳為100至2,000%,更佳為500至1,500%。於此,伸長率係為將薄膜於25℃,以300mm/分鐘之速率進行拉伸測試之結果值。除了拉伸速率以外,此特殊的伸長率測量方法係類似於該測量黏晶膜之拉伸模量(tensile modulus)的方法、以及類似方法。若伸長率低於100%,則表示薄膜於下述切割方法之延展步驟中容易受到撕裂。若大於2,000%,則表示薄膜下彎得很嚴重。The present invention is characterized in that the tensile modulus of the above-mentioned die film can be controlled, and in some cases, the tensile properties of the film can be controlled. Specifically, the dicing film herein is controlled so that its elongation is preferably from 100 to 2,000%, more preferably from 500 to 1,500%. Here, the elongation is a result of a tensile test of the film at a rate of 300 mm/min at 25 °C. In addition to the rate of elongation, this particular method of measuring elongation is similar to the method of measuring the tensile modulus of a die film, and the like. If the elongation is less than 100%, it means that the film is easily torn in the stretching step of the cutting method described below. If it is more than 2,000%, it means that the film is bent down very seriously.
藉由上述調整切割膜及/或黏晶膜之拉伸性能,切割步驟中毛邊情形以及晶片污染可受到抑制。再者,該薄膜可應用於下述本發明之切割方法中,以得到最大效應。By adjusting the tensile properties of the dicing film and/or the viscous film as described above, the burr condition and wafer contamination in the dicing step can be suppressed. Further, the film can be applied to the cutting method of the present invention described below to obtain the maximum effect.
本發明之該切割黏晶膜的組成材料以及製備方法並無特別限制,且此薄膜可使用本領域任何一般的技術輕易地製作得到。例如,本發明之切割黏晶膜可經由使用以下方法分別製備一黏晶膜以及一切割膜來製得,此方法包括:The constituent material and preparation method of the dicing die film of the present invention are not particularly limited, and the film can be easily produced by any general technique in the art. For example, the dicing die film of the present invention can be prepared by separately preparing a die film and a dicing film by using the following method, the method comprising:
一將一樹脂組成物溶解或分散於一溶劑中以得到一樹脂清漆(resin varnish)的第一步驟;a first step of dissolving or dispersing a resin composition in a solvent to obtain a resin varnish;
一將該樹脂清漆塗佈於一基膜上之第二步驟;以及a second step of applying the resin varnish to a base film;
一將該上方塗佈有樹脂清漆之基膜進行加熱以移除溶劑,並接著壓合之第三步驟。A third step of heating the base film coated with the resin varnish to remove the solvent and then pressing.
該第一步驟係使用一樹脂組成物來製備一樹脂清漆的步驟。在此,樹脂組成物之組成材料並無特別限制,且此於本領域之塗佈使用上可不受特別限制。例如,切割膜之壓敏膠黏層的材料可包括有高分子量熱塑性樹脂,如經由常溫下壓敏黏著處理而具有高黏吸力以及模量(modulus)之丙烯酸樹脂。一般而言,依照待處理之晶圓的厚度以及用途,可使用UV型或非UV型(如,熱固型)之膜層作為切割膜之壓敏膠黏層,且此些膜層可經由使用UV固化型壓敏黏膠或熱固型壓敏黏膠以及相似物來製作。在此,當使用UV型時,壓敏黏膠之黏吸力隨著UV照射而增加,因此結合強度(adhesion strength)隨之降低;當使用非-UV型時,結合強度係隨著加熱或施以相似作用而降低。當於切割步驟後而需將切出之晶圓取出時,此等UV型或非-UV型之膜層可產生出不同的剝離力。亦即,非-UV型薄膜相對於UV型薄膜具有較高的結合強度,因此,若當晶圓厚度較薄時,取出時可能會造成缺陷產生。故,當晶圓厚度較薄時,較佳係使用具有低結合強度的UV型切割膜。在此,較佳係使用UV型壓敏黏膠,但不僅限於此。This first step is a step of preparing a resin varnish using a resin composition. Here, the constituent material of the resin composition is not particularly limited, and the coating application in the art is not particularly limited. For example, the material of the pressure-sensitive adhesive layer of the dicing film may include a high molecular weight thermoplastic resin such as an acrylic resin having high adhesion and modulus via pressure-sensitive adhesive treatment at normal temperature. In general, depending on the thickness and use of the wafer to be processed, a UV-type or non-UV-type (eg, thermoset) film layer may be used as the pressure-sensitive adhesive layer of the dicing film, and the film layers may be It is made using a UV-curable pressure-sensitive adhesive or a thermosetting pressure-sensitive adhesive and the like. Here, when the UV type is used, the viscosity of the pressure-sensitive adhesive increases with UV irradiation, so the adhesion strength decreases. When the non-UV type is used, the bonding strength is followed by heating or application. Reduced by a similar effect. These UV-type or non-UV-type film layers can produce different peeling forces when the cut wafers are removed after the cutting step. That is, the non-UV type film has a high bonding strength with respect to the UV type film, and therefore, when the thickness of the wafer is thin, defects may be generated when taken out. Therefore, when the thickness of the wafer is thin, it is preferred to use a UV-type dicing film having a low bonding strength. Here, it is preferable to use a UV type pressure sensitive adhesive, but it is not limited thereto.
有鑒於見結強度以及高溫與熱抗性,高分子量熱塑性樹脂由於具有彈性以及初步的黏著特性,因此可使用作為黏晶膜之膠黏層。可用來作為膠黏層之代表性的組成物包含一包括有多官能環氧樹脂、硬化劑、以及一熱固型樹脂的組成物。較佳係使用一酚醛樹脂作為硬化劑,且為了於高溫時具有濕氣抵抗性,其較佳係經由PCT(壓力鍋試驗,Pressure Cooker Test:121℃/100%/2atm)之48小時測試後之吸濕性為2.0重量百分比或更低。此外,該熱塑性樹脂包含具有官能基(如環氧丙基(glycidyl group)、羥基(hydroxy group)、羧基(carboxyl group)、及/或腈基(nitrile group))之化合物,例如包含如(甲基)丙烯酸環氧丙酯(glycidyl(meth)acrylate)、(甲基)丙烯酸羥基酯(hydroxy(meth)acrylate)、及/或(甲基)丙烯酸羧基酯(carboxyl(meth)acrylate)單體之丙烯酸樹脂。雖然此些材料係為本發明所使用之範例,但本發明並不受限於此,且本領域之一般的材料亦可不受限地可取用於此薄膜製備之使用。In view of the strength of the joint and the high temperature and heat resistance, the high molecular weight thermoplastic resin can be used as an adhesive layer of the adhesive film because of its elasticity and preliminary adhesive properties. A representative composition that can be used as an adhesive layer comprises a composition comprising a multifunctional epoxy resin, a hardener, and a thermosetting resin. Preferably, a phenolic resin is used as the hardener, and in order to have moisture resistance at high temperatures, it is preferably tested by PCT (Pressure Cooker Test: 121 ° C / 100% / 2 atm) for 48 hours. The hygroscopicity is 2.0% by weight or less. Further, the thermoplastic resin contains a compound having a functional group such as a glycidyl group, a hydroxy group, a carboxyl group, and/or a nitrile group, for example, including (a) Glycidyl (meth) acrylate, hydroxy (meth) acrylate, and/or carboxy (meth) acrylate monomer Acrylic. Although such materials are examples of the invention used, the invention is not limited thereto, and materials of ordinary skill in the art may also be used without limitation in the preparation of such films.
該所述之清漆之溶劑可為一或多個選自以下所組成之群組:甲乙酮(methylethyl ketone,MEK)、丙酮、甲苯(toluene)、二甲基甲醯胺(dimethylformamide,DMF)、甲基溶纖劑(methylcellosolve(MCS))、四氫呋喃(tetrahydrofuran,THF))、以及N-甲基吡咯烷酮(N-methylpyrrolidone,NMP)。The solvent of the varnish may be one or more selected from the group consisting of methylethyl ketone (MEK), acetone, toluene, dimethylformamide (DMF), A solution of methylcellosolve (MCS), tetrahydrofuran (THF), and N-methylpyrrolidone (NMP).
為了縮短製程時間或改善薄膜中的分散度,此填充劑可於第一步驟進行時即加入。添加填充劑的方法的範例包括:球磨(ball mill)、砂磨(bead mill)、三輥軋(three rolls)、或使用高速分散機,此些方法可單獨使用作組合二者以上一同使用。此方法中所用之球或砂(bead)可由玻璃、礬土、或鋯、以及其相似物來製備。而為了提高顆粒分散度,較佳使用由鋯所製備之球或砂(bead)。In order to shorten the process time or improve the dispersion in the film, the filler can be added as the first step proceeds. Examples of the method of adding a filler include a ball mill, a bead mill, a three-roller, or a high-speed disperser, and these methods can be used alone or in combination of two or more. The balls or beads used in this method can be prepared from glass, alumina, or zirconium, and the like. In order to increase the particle dispersion, it is preferred to use a ball or a bead prepared from zirconium.
該第二步驟係一將該預備好之樹脂清漆塗佈於基膜上之步驟。如何將樹脂清漆塗佈於基膜上之方法並無特別限制。例如,習知技術中如刮塗法、輥塗法、噴塗法、凹版印刷塗佈法、落簾塗布(curtain coat)、切角塗佈(comma coat)、及/或唇塗(lip coat)皆可使用。上述步驟中所使用之基膜亦無特別限制。例如,可使用本領域一般所用之材料,如聚乙烯膜(polyethylene film)、聚丙烯膜(polypropylene film)、聚四氟乙烯膜(polytetrafluoroethylene film)、聚乙烯對苯二甲酸酯膜(polyethyleneterephthalate film)、聚氨酯(polyurethane film)、乙烯-乙酸乙烯酯膜(ethylene vinyl acetate film)、乙烯-丙烯共聚膜(ethylene-propylene copolymer film)、乙烯-丙烯酸乙酯共聚物膜(ethylene-acrylic acid ethyl copolymer film)、乙基共聚物膜(ethyl copolymer film)、或乙烯-丙烯酸甲酯共聚物膜(ethylene-acrylic acid methyl copolymer film)、以及相似物。若有需要,可將基膜進行表面處理,如底漆塗佈(primer application)、電暈處理、蝕刻處理、或UV照射,且為了可進行UV照射固化,該基膜可選自一具有好的光穿透性之材料。This second step is a step of applying the prepared resin varnish to the base film. The method of applying the resin varnish to the base film is not particularly limited. For example, conventional techniques such as knife coating, roll coating, spray coating, gravure coating, curtain coat, comma coat, and/or lip coat are used. Can be used. The base film used in the above steps is also not particularly limited. For example, materials generally used in the art, such as a polyethylene film, a polypropylene film, a polytetrafluoroethylene film, a polyethylene terephthalate film (polyethylene terephthalate film) can be used. ), polyurethane film, ethylene vinyl acetate film, ethylene-propylene copolymer film, ethylene-acrylic acid ethyl copolymer film ), an ethyl copolymer film, or an ethylene-acrylic acid methyl copolymer film, and the like. If necessary, the base film may be subjected to surface treatment such as primer application, corona treatment, etching treatment, or UV irradiation, and the base film may be selected from a good one for UV irradiation curing. Light penetrating material.
第三步驟是一該基膜進行加熱以移除溶劑之步驟,其中加熱較佳是於70至250℃進行5至20分鐘,但不限於此。The third step is a step of heating the base film to remove the solvent, wherein the heating is preferably carried out at 70 to 250 ° C for 5 to 20 minutes, but is not limited thereto.
在使用上述方法製得切割膜以及黏晶膜後,將其壓合以製備切割黏晶膜。於此,該製備之切割膜以及黏晶膜可藉由如熱軋壓合(hot roll laminate)或加壓壓合(laminate press)之方法進行壓合。為了可連續製造且具有較高的效率,較佳係使用熱軋壓合法,且此方法較佳係於10至100℃的溫度以及0.1至10Kgf/cm2 的壓力條件中進行,但不限於此。After the dicing film and the viscous film were obtained by the above method, they were pressed to prepare a dicing die film. Here, the prepared dicing film and the die-bonding film can be pressed by a method such as hot roll laminate or laminate press. In order to be continuously manufactured and have high efficiency, it is preferred to use a hot rolling press method, and the method is preferably carried out at a temperature of 10 to 100 ° C and a pressure of 0.1 to 10 Kgf / cm 2 , but is not limited thereto. .
如圖1所示,本發明亦關於一種使用一切割黏晶膜之切割方法,該切割黏晶膜係包括一切割膜(1),具有一基膜、以及一形成於該基膜上之壓敏膠黏層;以及一形成於該切割膜上之黏晶膜(2),而此方法包括:一第一步驟,係將一晶圓黏著於黏晶膜上;一第二步驟,係切割至黏晶膜非完全切斷之深度;以及一第三步驟,係將切割黏晶膜延展以將黏晶膜完全分離。當一半導體封裝之切割步驟使用上述方法完成時,可大幅地調整切割膜以及黏晶膜的物理特性,且本發明可使切割黏晶膜具有優異的可加工性以及信賴性,如黏著性、隙縫填充性、以及取出便利性,且可防止切割步驟中毛邊的情形發生。若僅提高薄膜之可加工性以及信賴性的物理特性,而不考量晶片污染以及毛邊的問題,薄膜的特性可得到大幅提升。然而,為了降低薄膜毛邊的發生,模量(modulus)必須維持於一定值之上。由於此限制的關係,黏晶步驟中的黏著特性以及縫隙填充性則會被迫降低。也就是說,當一般用於調整薄膜模量(modulus)的無機填充物的量增加時,晶圓的黏著性會降低,因此造成晶片掉落以及取出問題的產生。此外,當縫隙填充性因為無機填充物以及模量增加而降低時,基板(如PCB(印刷電路板,Printed Circuit Board)以及引線框)與黏晶膜之間則會產生開口,而影響到封裝基板的信賴性。As shown in FIG. 1, the present invention also relates to a cutting method using a dicing die film, the dicing die film comprising a dicing film (1) having a base film and a pressure formed on the base film a photosensitive adhesive layer; and a die-bonding film (2) formed on the dicing film, the method comprising: a first step of adhering a wafer to the viscous film; and a second step of cutting To the depth at which the die film is not completely cut; and in a third step, the die film is stretched to completely separate the die film. When the cutting step of a semiconductor package is completed by the above method, the physical properties of the dicing film and the viscous film can be greatly adjusted, and the present invention can provide excellent workability and reliability, such as adhesion, of the dicing die film. The gap filling property, as well as the convenience of take-out, can prevent the occurrence of burrs in the cutting step. The film properties can be greatly improved by merely improving the film's processability and reliability of physical properties without considering wafer contamination and burrs. However, in order to reduce the occurrence of film burrs, the modulus must be maintained above a certain value. Due to this limitation, the adhesion characteristics and the gap filling property in the die bonding step are forced to be lowered. That is, when the amount of the inorganic filler generally used to adjust the modulus of the film is increased, the adhesion of the wafer is lowered, thereby causing the wafer to fall and the problem of taking out. In addition, when the gap filling property is lowered due to the increase of the inorganic filler and the modulus, an opening is formed between the substrate (such as a printed circuit board (Printed Circuit Board) and the lead frame) and the adhesive film, which affects the package. The reliability of the substrate.
然而,本發明之切割方法中,在不影響物理特性如薄膜模量的前提下,黏晶後之縫隙填充性可得到最佳化。一般的封裝製程中,經由黏晶以及成模步驟可將基板與黏晶膜之間的縫隙填充性提升至100%,然而本發明可將基板與黏晶膜之間的縫隙填充性提升至100%並同時調整薄膜之物理特性。具體上沒有任何限制,上述本發明之切割黏晶膜較佳係應用至本發明之切割方法中。However, in the cutting method of the present invention, the gap filling property after the die bonding can be optimized without affecting the physical properties such as the film modulus. In a general packaging process, the gap filling property between the substrate and the die film can be improved to 100% through the die bonding and the molding step, but the gap filling property between the substrate and the die film can be improved to 100 by the present invention. % and adjust the physical properties of the film at the same time. Specifically, the dicing die-bonding film of the present invention is preferably applied to the cutting method of the present invention.
此後,將伴隨圖示逐一詳細說明本發明之切割方法中的各個步驟。Hereinafter, each step in the cutting method of the present invention will be described in detail with reference to the drawings.
如圖2所示,本發明之第一步驟係將一經切割後之晶圓(3)黏接至黏晶膜(2)上。在此,黏接晶圓(3)之方法並無特別限制,且可使用本領域中通常之方法進行。As shown in FIG. 2, the first step of the present invention bonds a diced wafer (3) to the die film (2). Here, the method of bonding the wafer (3) is not particularly limited and can be carried out by a method generally known in the art.
第二步驟係切割該上方黏有晶圓(3)的薄膜,以製備半導體晶片。如圖3所示,本發名之特色在於,將切割的深度控制在黏晶膜(2)非完全切開的深度。圖4係表示進行本發明之切割步驟後,切割刀片(4)移開後的示意圖,圖5係為圖4中黏晶膜(2)以及晶圓(3)區域的部分放大圖。特別地,該第二步驟中的切割深度係依照黏晶膜的厚度來作決定。當黏晶膜較厚時,則必須切割較深的厚度。在無特別限制之前提下,第二步驟之晶圓切割的過程中,較佳係切割至黏晶膜厚度的50至99%,更佳為75至95%。若切割深度小於黏晶膜厚度的50%,則會造成薄膜於後續的延展步驟中將無法完全被分離。若切割深度大於黏晶膜厚度的99%,則會因為製程限制範圍而使部分的切割膜因切割而產生毛邊。The second step is to cut the film on which the wafer (3) is adhered to prepare a semiconductor wafer. As shown in Fig. 3, this feature is characterized in that the depth of the cut is controlled to a depth at which the die film (2) is not completely cut. 4 is a schematic view showing the cutting blade (4) after the cutting step of the present invention is removed, and FIG. 5 is a partially enlarged view of the region of the die film (2) and the wafer (3) of FIG. In particular, the depth of cut in the second step is determined in accordance with the thickness of the die film. When the die film is thick, it is necessary to cut a deeper thickness. It is preferable to cut to 50 to 99%, more preferably 75 to 95% of the thickness of the die film during the wafer cutting process of the second step, without any particular limitation. If the cutting depth is less than 50% of the thickness of the die film, the film will not be completely separated in the subsequent stretching step. If the cutting depth is greater than 99% of the thickness of the die film, a part of the cut film may be burred due to the cutting process.
本發明之第三步驟係將該切割黏晶膜延展以將該經由部分切割的黏晶膜完全分離。此延展的步驟係用以使受切割的晶片之間的距離拉長,而使接下來的取出步驟得以順暢地進行,而其中黏著於切割晶圓之切割黏晶膜可受到各方向的拉伸(360度)。The third step of the present invention extends the dicing die to completely separate the partially etched die film. The step of stretching is to lengthen the distance between the cut wafers, so that the subsequent removal step can be smoothly performed, and the cutting die film adhered to the cut wafer can be stretched in all directions. (360 degrees).
本發明之切割方法中的延展步驟,相較於習知之步驟具有較低的延展特性。亦即,於習知之方法中,部分被切開的切割膜之基膜較容易受到延展。但在本發明中,由於整片膜中切割的部位相較習知技術中較為減少,因此延展特性會相對減低。因此,為了使延展步驟可流暢地進行,膜的拉伸性能需要受到調整,或是需依照拉伸性能而適當的控制延展進行條件。本發明中,第三步驟的延展係依照切割膜中基膜的拉伸性能(拉伸曲線(tensile curve)),來調整延展強度(expanding strength)以及延展比例。該切割膜中基膜的拉伸性能,係如上述相同方法中之特定條件(拉伸速率:300mm/分鐘)進行測試。一個用以表示拉伸性能的拉伸曲線(tensile curve)中,Y軸表示施以樣品的應力,而X軸係表示樣品受到應力而產生的變形比例(拉伸應變(tensile strain),%)。下文中,「延展強度(expanding strength)」一詞代表的是延展過程中切割黏晶膜所受到的應力,且其相當於拉伸曲線(tensile curve)中之Y軸。此外,「延展比例」係指延展過程中切割黏晶膜的變形比例,且其相當於拉伸曲線(tensile curve)中之X軸。The stretching step in the cutting method of the present invention has lower ductility characteristics than the conventional steps. That is, in the conventional method, the base film of the partially cut film is more easily stretched. However, in the present invention, since the portion to be cut in the entire film is less than that in the prior art, the elongation characteristics are relatively reduced. Therefore, in order to allow the stretching step to proceed smoothly, the tensile properties of the film need to be adjusted, or the conditions for controlling the elongation in accordance with the tensile properties are appropriately controlled. In the present invention, the elongation of the third step is to adjust the expansion strength and the elongation ratio in accordance with the tensile properties (tensile curves) of the base film in the dicing film. The tensile properties of the base film in the dicing film were tested under the specific conditions (tensile rate: 300 mm/min) in the same method as described above. In a tensile curve for indicating tensile properties, the Y axis represents the stress applied to the sample, and the X axis represents the deformation ratio (tensile strain, %) of the sample subjected to stress. . Hereinafter, the term "expanding strength" refers to the stress experienced by the die-cut film during the stretching process, and it corresponds to the Y-axis in the tensile curve. In addition, the "expansion ratio" refers to the deformation ratio of the die-cut film during the stretching process, and it corresponds to the X-axis in the tensile curve.
本發明之切割步驟中,第三步驟的延展強度(expanding strength)較佳是切割膜中基膜的屈服強度(yield strength)之60至90%。若延展強度小於60%,則表示薄膜下彎得很嚴重。若延展強度大於90%,則表示薄膜容易受到撕裂。In the cutting step of the present invention, the expanding strength of the third step is preferably 60 to 90% of the yield strength of the base film in the dicing film. If the ductility is less than 60%, it means that the film is bent down very seriously. If the ductility is greater than 90%, it means that the film is easily torn.
本發明之第三步驟中,切割黏晶膜的延展比例較佳係控制在切割膜中基膜的屈服伸長率(yield elongation)之外。「屈服伸長率(yield elongation)」一詞係表示切割膜之基膜的拉伸曲線(tensile curve)中,屈服點(yield point)的拉伸應變(tensile strain)。此外,該切割黏晶膜的延展比例,較佳係低於切割膜之基膜的拉伸曲線中(過了屈服點之後)抗拉強度值再次升高的拉伸應變點。若該延展比例低於切割膜之基膜的屈服點(yield point),則表示薄膜在延展過程中仍固定不變,而當整個薄膜收縮時的作用力則會使得晶片於取出的步驟中被彈出、或是產生缺陷。此外,若延展比例在拉伸曲線之抗拉強度增加點外時,則必須使延展設備進行二次負載使晶圓振動,則使得晶片飛散的問題產生。In the third step of the present invention, the elongation ratio of the dicing die film is preferably controlled outside the yield elongation of the base film in the dicing film. The term "yield elongation" means a tensile strain at a yield point in a tensile curve of a base film of a dicing film. Further, the elongation ratio of the dicing die film is preferably lower than the tensile strain point in which the tensile strength value is increased again in the tensile curve of the base film of the dicing film (after the yield point has passed). If the elongation ratio is lower than the yield point of the base film of the dicing film, it means that the film is still fixed during the stretching process, and the force when the entire film shrinks causes the wafer to be taken in the step of taking out. Pop up, or create a defect. Further, if the elongation ratio is outside the tensile strength increase point of the tensile curve, the extension device must be subjected to secondary load to vibrate the wafer, which causes a problem of wafer scattering.
本發明之切割方法中,毎一步驟中的條件係依照黏晶膜的厚度及/或切割膜之基膜的拉伸性能來決定。因此,本發明之切割方法具有一優點,係所使用的材料種類並無限制。例如,當使用聚烯烴膜作為本發明之基膜時,本發明之一實施態樣係如下述。In the cutting method of the present invention, the conditions in the first step are determined in accordance with the thickness of the adhesive film and/or the tensile properties of the base film of the cut film. Therefore, the cutting method of the present invention has an advantage in that the kind of material used is not limited. For example, when a polyolefin film is used as the base film of the present invention, an embodiment of the present invention is as follows.
亦即,本發明係關於一種使用切割黏晶膜之切割方法,該切割黏晶膜包括一切割膜,其係具有聚烯烴膜(polyolefin film)、以及形成於該聚烯烴膜上之壓敏膠黏層;以及一形成於該切割膜上之黏晶膜,該方法包括:That is, the present invention relates to a cutting method using a dicing die film, the dicing die film comprising a dicing film having a polyolefin film and a pressure sensitive adhesive formed on the polyolefin film a layer of adhesive; and a die-form film formed on the dicing film, the method comprising:
(1)將一晶圓黏著於黏晶膜上之步驟;(1) a step of adhering a wafer to the die film;
(2)切割晶圓至黏晶膜非完全切斷之深度的步驟;以及(2) a step of cutting the wafer to a depth at which the die film is not completely cut;
(3)將切割黏晶膜延展以將黏晶膜完全分離之步驟。(3) A step of stretching the dicing film to completely separate the morphological film.
此聚烯烴膜係為最常使用作為切割膜之基膜的材料,其拉伸曲線(tensile curve)係如同圖7中所示之。於該圖中,MD(機械方向,Mechanical Direction)係指製備過程中之圖佈方向,且TD(斷面方向,Transverse Direction)係指垂直該MD的方向。如圖7所示,當應變速率(tensile speed)為300mm/分鐘時,聚烯烴膜具有約1,000至1,500gf的屈服強度、約2,800至3,300的抗拉強度、以及1,000%的伸長率。This polyolefin film is the material most commonly used as a base film of a dicing film, and its tensile curve is as shown in FIG. In the figure, MD (Mechanical Direction) refers to the direction of the cloth in the preparation process, and TD (Transverse Direction) refers to the direction perpendicular to the MD. As shown in FIG. 7, when the tensile speed is 300 mm/min, the polyolefin film has a yield strength of about 1,000 to 1,500 gf, a tensile strength of about 2,800 to 3,300, and an elongation of 1,000%.
當使用此等切割膜於本發明之方法中時,每一步驟之特定條件係如下述。When such a dicing film is used in the method of the present invention, the specific conditions of each step are as follows.
也就是,於步驟(1)以及(2)中,當處理晶圓時,切割需進行至該黏晶膜非完全切斷之深度,較佳係切割至黏晶膜厚度的50至99%,更佳為75至95%。接下來的步驟中需進行延展步驟,其中延展強度較佳係600至1,350gf,即為切割膜中基膜(聚烯烴膜)的屈服強度的60至90%。此外,同時,聚烯烴膜的變形比例較佳係在屈服伸長率外(約8至12%,請參見圖7),並低於屈服點後抗拉強度再次升高之拉伸應變值(約25至30%,請參見圖7)。That is, in the steps (1) and (2), when the wafer is processed, the cutting is performed to a depth at which the die film is not completely cut, preferably to 50 to 99% of the thickness of the die film. More preferably from 75 to 95%. In the next step, an extension step is required, wherein the ductility is preferably 600 to 1,350 gf, which is 60 to 90% of the yield strength of the base film (polyolefin film) in the dicing film. In addition, at the same time, the deformation ratio of the polyolefin film is preferably outside the yield elongation (about 8 to 12%, see Fig. 7), and is lower than the tensile strain after the yield point. 25 to 30%, see Figure 7).
本發明更關於一種半導體之封裝方法,包括:The invention further relates to a semiconductor packaging method, comprising:
(1)將該經由上述切割方法所分開之半導體晶片取出;(1) taking out the semiconductor wafer separated by the above cutting method;
(2)將該取出之半導體晶片黏接至一半導體基板;(2) bonding the removed semiconductor wafer to a semiconductor substrate;
(3)以一電性連接元件將該半導體晶片電性連接至該半導體基板;以及(3) electrically connecting the semiconductor wafer to the semiconductor substrate with an electrical connection element;
(4)以一封膠將該封裝體進行成模。(4) The package is molded with a piece of glue.
該半導體封裝方法之進行狀態並無特殊限制,且該些取出、黏晶、打線、以及成模步驟所進行之條件皆無特別限制。The state in which the semiconductor encapsulation method is carried out is not particularly limited, and the conditions for the extraction, the die bonding, the wire bonding, and the molding step are not particularly limited.
上述之切割黏晶膜以及切割方法可使半導體封裝過程具有優異的可加工性以及信賴性,且可提高製備各種半導體裝置的效率。半導體裝置的例子可包括:行動電話或行動終端中所使用之快閃記憶體、或半導體記憶體。近來,半導體裝置係以MCP(Multi Chip Package,多晶片封裝)製備,MCP係為一包含有多個壓合於一基板上之晶片,以使半導體可達到高整合性及多功能性之要求。本發明之薄膜以及方法於此MCP的應用上亦可達到優異的可加工性以及信賴性。The above-mentioned dicing die film and dicing method can provide excellent processability and reliability of the semiconductor packaging process, and can improve the efficiency of preparing various semiconductor devices. Examples of the semiconductor device may include a flash memory used in a mobile phone or a mobile terminal, or a semiconductor memory. Recently, a semiconductor device is fabricated by a MCP (Multi Chip Package), which is a chip including a plurality of wafers bonded to a substrate, so that the semiconductor can achieve high integration and versatility. The film and method of the present invention can also achieve excellent processability and reliability in the application of the MCP.
以下係藉由本發明的具體實施例以及非本發明之比較例更詳細地說明本發明之實施方式。然而,本發明之範疇並不僅限於下述實施例的範圍。Hereinafter, embodiments of the present invention will be described in more detail by way of specific examples of the invention and comparative examples of the invention. However, the scope of the invention is not limited to the scope of the following embodiments.
[實施例1][Example 1]
將一含66重量份之芳香型(aromatic-based)環氧樹脂(酚醛型環氧樹脂,軟化點80℃)、60重量份之酚樹脂(酚醛樹脂(phenol novolac resin),軟化點90℃)、200重量份之含環氧基之丙烯酸共聚物(SA-55,由LG Chem,Ltd.取得,Tg=9℃,重量平均分子量500,000)、0.3重量份之硬化加速劑(2-苯基-4-甲基咪唑(2-phenyl-4-methyl imidazole,2P4MZ))、以及15重量份之氧化矽(熔融氧化矽,平均顆粒直徑75nm)之組成物進行攪拌,並加入至甲基乙基酮中混合以製備一清漆(varnish)。A 66 parts by weight aromatic-based epoxy resin (phenolic epoxy resin, softening point 80 ° C), 60 parts by weight of phenol resin (phenol novolac resin, softening point 90 ° C) 200 parts by weight of an epoxy group-containing acrylic copolymer (SA-55, obtained by LG Chem, Ltd., Tg = 9 ° C, weight average molecular weight 500,000), 0.3 parts by weight of a hardening accelerator (2-phenyl- 4-methyl-4-methylimidazole (2P4MZ), and 15 parts by weight of a composition of cerium oxide (melted cerium oxide, average particle diameter: 75 nm) were stirred and added to methyl ethyl ketone. Mix in to prepare a varnish.
將製得之清漆塗佈至一厚度38μm的基膜(聚酯離型膜,Film,RS-21G,由SKC取得)上,並於110℃乾燥3分鐘使製得一厚度20μm的薄膜。將所製得的薄膜以50mm x 10mm(長X寬)的大小進行切割,並注意使長邊方向與製程中塗佈方向相同,如此製作出樣品,接著將此樣品之兩端黏貼固定,使長邊方向留下25mm的長度。接著,於常溫下(25℃)將樣品固定並以12.8mm/分鐘的速率拉伸,測量其拉伸模量(tensile modulus)。於此,薄膜於常溫下所測得之拉伸模量為450Mpa。關於黏晶膜的製作,係將一具有厚度100μm的基膜與一厚度10μm的壓敏膠黏層壓合後形成一切割膜,並將此切割膜裁剪而製備切割黏晶膜。The obtained varnish was applied onto a base film (polyester release film, Film, RS-21G, obtained from SKC) having a thickness of 38 μm, and dried at 110 ° C for 3 minutes to prepare a film having a thickness of 20 μm. The prepared film is cut at a size of 50 mm x 10 mm (length X width), and the longitudinal direction is the same as the coating direction in the process, so that a sample is prepared, and then the ends of the sample are adhered and fixed. The length of the long side leaves a length of 25 mm. Next, the sample was fixed at normal temperature (25 ° C) and stretched at a rate of 12.8 mm / minute, and its tensile modulus was measured. Here, the tensile modulus of the film measured at room temperature was 450 MPa. Regarding the production of the adhesive film, a base film having a thickness of 100 μm is laminated with a pressure-sensitive adhesive having a thickness of 10 μm to form a dicing film, and the dicing film is cut to prepare a dicing die film.
[實施例2][Embodiment 2]
除了須使用100重量份之丙烯酸樹脂以外,如實施例1相同之方法製備一切割黏晶膜。在此,黏晶膜所具有之拉伸模量(tensile modulus)為900MPa。A dicing die film was prepared in the same manner as in Example 1 except that 100 parts by weight of the acrylic resin was used. Here, the die bond film has a tensile modulus of 900 MPa.
[實施例3][Example 3]
除了須使用400重量份之丙烯酸樹脂以外,如實施例1相同之方法製備一切割黏晶膜。在此,黏晶膜所具有之拉伸模量(tensile modulus)為200MPa。A dicing die film was prepared in the same manner as in Example 1 except that 400 parts by weight of an acrylic resin was used. Here, the die bond film has a tensile modulus of 200 MPa.
[比較例1][Comparative Example 1]
除了須使用30重量份之丙烯酸樹脂以外,如實施例1相同之方法製備一切割黏晶膜。在此,黏晶膜所具有之拉伸模量(tensile modulus)為3,000MPa。A dicing die film was prepared in the same manner as in Example 1 except that 30 parts by weight of an acrylic resin was used. Here, the die bond film has a tensile modulus of 3,000 MPa.
[比較例2][Comparative Example 2]
除了須使用600重量份之丙烯酸樹脂以外,如實施例1相同之方法製備一切割黏晶膜。在此,黏晶膜所具有之拉伸模量(tensile modulus)為10MPa。A dicing die film was prepared in the same manner as in Example 1 except that 600 parts by weight of an acrylic resin was used. Here, the die bond film has a tensile modulus of 10 MPa.
[比較例3][Comparative Example 3]
將實施例1中之切割黏晶膜於切割步驟中的切割深度進行調整,使其作為比較例3。The cutting depth of the dicing die film in Example 1 in the cutting step was adjusted to make Comparative Example 3.
關於將上述實施例1至3以及比較例1及2所製得之切割黏晶膜應用於加工時的毛邊情形、取出特性、以及晶片受污染率(contamination rate of die),係使用以下方法來作測量。The dicing film obtained by the above Examples 1 to 3 and Comparative Examples 1 and 2 was applied to the burr case, the take-out characteristics, and the contamination rate of die at the time of processing, using the following method. Make measurements.
1.毛邊情形、取出特性、以及晶片受污染率的測試1. Raw edge condition, extraction characteristics, and wafer contamination rate test
實施例1至3以及比較例1以及2之測試Tests of Examples 1 to 3 and Comparative Examples 1 and 2
使用實施例以及比較例中所製得之切割黏晶膜進行切割製程,切割尺寸為5mm×5mm,切割深度為17μm,並觀察毛邊情形。接下來,將薄膜拉伸至7mm以進行取出特性的觀察。The cutting process was carried out using the dicing die film prepared in the examples and the comparative examples, the cutting size was 5 mm × 5 mm, the cutting depth was 17 μm, and the burr was observed. Next, the film was stretched to 7 mm to observe the take-out characteristics.
將上述之測試進行100次,並計算約100個晶片之毛邊發生次數。關於取出測試的判定,即使100個晶片之中僅1個失敗,仍需視為具有瑕疵。此外,於經由延展步驟將黏晶膜分離後,亦須以如同毛邊計算方法來計算由於黏晶膜裁剪所產生之薄膜粉末造成之晶片受污染率。The above test was performed 100 times, and the number of occurrences of burrs of about 100 wafers was calculated. Regarding the determination of the take-out test, even if only one of the 100 wafers fails, it is considered to have 瑕疵. In addition, after separating the die film through the stretching step, the wafer contamination rate due to the film powder produced by the die cutting is also calculated by the method of calculating the burr.
比較例3之測試Test of Comparative Example 3
當使用實施例1之切割黏晶膜進行切割步驟時,使切割步驟僅切割進行至黏晶膜,觀察所有的壓敏膠黏層以及部分的切割膜(30μm)之基膜的毛邊發生情形。接著,將薄膜拉伸至7mm以進行取出特性的觀察。在此,晶片切割尺寸為5mm×5mm。When the dicing step of the dicing die film of Example 1 was carried out, the dicing step was only cut to the die film, and the occurrence of burrs of the base film of all the pressure-sensitive adhesive layers and a part of the dicing film (30 μm) was observed. Next, the film was stretched to 7 mm to observe the take-out characteristics. Here, the wafer is cut to a size of 5 mm x 5 mm.
上述之測量結果係如下表1所示。The above measurement results are shown in Table 1 below.
如圖1所示,使用本發明實施例1至3之切割黏晶膜於本發明之切割方法中,可完全地解決毛邊或晶片之污染。相較之下,由於比較例1至3之切割黏晶膜之模量已背離本發明之範疇,或是即使已使用了本發明之切割黏晶膜但卻沒有使用本發明之方法,因此亦無法得到較佳的結果。As shown in FIG. 1, the use of the dicing die-bonding films of Embodiments 1 to 3 of the present invention can completely solve the contamination of the burrs or wafers in the cutting method of the present invention. In contrast, since the modulus of the dicing die film of Comparative Examples 1 to 3 has deviated from the scope of the present invention, or even if the dicing die film of the present invention has been used, the method of the present invention is not used, and therefore No better results were obtained.
尤其,在具有過多模量的黏晶膜之比較例1中,晶片嚴重地受到切割所產生的毛邊污染。此外,在具有較少模量的黏晶膜之比較例2中,雖然沒有發生毛邊或是污染,但黏晶步驟中的取出特性以及隙縫填充性卻是異常低落。再者,關於將實施例1之切割黏晶膜使用於習知切割方法中的比較例3,雖然取出特性、黏著性、以及隙縫填充性表現優異,但其切割過程中卻產生大量的毛邊。In particular, in Comparative Example 1 having a mutex film having a excessive modulus, the wafer was severely contaminated by burrs generated by the cutting. Further, in Comparative Example 2 in which the polycrystalline film having a small modulus was present, although the burrs or contamination did not occur, the take-out characteristics and the gap filling property in the die-bonding step were abnormally low. Further, in Comparative Example 3 in which the dicing die-bonding film of Example 1 was used in a conventional dicing method, although the take-out characteristics, the adhesiveness, and the slit filling property were excellent, a large amount of burrs were generated during the cutting process.
1...切割膜1. . . Cutting film
1-1...基膜1-1. . . Base film
1-2...壓敏膠黏層1-2. . . Pressure sensitive adhesive layer
2...黏晶膜2. . . Muc film
3...晶圓3. . . Wafer
4...切割刀片4. . . Cutting blade
A...黏晶膜的切割深度A. . . Cutting depth of the die film
B...切割步驟完成後未被切割的深度B. . . Depth of cut after completion of the cutting step
C...切割寬度C. . . Cutting width
圖1係本發明一較佳實施態樣之黏著層之示意圖,其中一黏晶膜係壓合於一切割膜上。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of an adhesive layer in accordance with a preferred embodiment of the present invention, wherein a die bond film is laminated to a dicing film.
圖2係表示一晶圓黏附於圖1之黏著層之示意圖。2 is a schematic view showing a wafer adhered to the adhesive layer of FIG. 1.
圖3係表示一本發明一實施態樣的切割方法中,以切割刀片部分地切割黏晶膜。Fig. 3 is a view showing a cutting method according to an embodiment of the present invention, in which a die-cut film is partially cut by a cutting blade.
圖4係表示如圖3之部分切割步驟完成後的剖示圖。Figure 4 is a cross-sectional view showing the completion of the partial cutting step of Figure 3.
圖5係為圖4中黏晶膜以及晶圓區域的部分放大圖。FIG. 5 is a partial enlarged view of the die film and the wafer region of FIG. 4.
圖6係為黏晶膜經由將部分切開之薄膜進行延展後而完全分離之示意圖。Figure 6 is a schematic illustration of the complete separation of the die film by stretching the partially slit film.
圖7係為一聚烯烴膜(polyolefin film)之拉伸曲線(tensile curve)圖。Figure 7 is a tensile curve diagram of a polyolefin film.
1-1...基膜1-1. . . Base film
1-2...壓敏膠黏層1-2. . . Pressure sensitive adhesive layer
2...黏晶膜2. . . Muc film
3...晶圓3. . . Wafer
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