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Publication of TWI456757BpublicationCriticalpatent/TWI456757B/en
一種可調節的場效應整流器，其包括：一N導電性磊晶層；一對P井(彼此相互分隔)，其形成在該磊晶層之中；一閘極區，形成在該磊晶層頂端；一開口，其穿過該閘極區；以及一P層，其經由該開口形成在該磊晶層之中。An adjustable field effect rectifier comprising: an N conductive epitaxial layer; a pair of P wells (separated from each other) formed in the epitaxial layer; a gate region formed on the epitaxial layer a top end; an opening through the gate region; and a P layer formed in the epitaxial layer via the opening.一種可調節的場效應整流器，其包括：具有第一導電性的一磊晶層，其在它的其中一側形成一汲極；具有第二導電性的一對井部(和該第一導電性相反)(彼此相互分隔)，其形成在該磊晶層中與該汲極相反之處；一閘極區，其形成在該磊晶層頂端與該汲極相反之處；一開口，其穿過該閘極區；一第二導電性層，其經由該開口形成在該磊晶層之中；一第一接點，其會被連接至該閘極區、經由該開口所形成的層、以及該對井部中的其中一個井部；一第二接點，其會被連接至該對井部中的另一井部；以及一第三接點，其會被連接至該汲極。An adjustable field effect rectifier comprising: an epitaxial layer having a first conductivity forming a drain on one side thereof; a pair of wells having a second conductivity (and the first conductive portion) Sexually opposite) (separated from each other) formed in the epitaxial layer opposite to the drain; a gate region formed at the top of the epitaxial layer opposite the drain; an opening Passing through the gate region; a second conductive layer formed in the epitaxial layer via the opening; a first contact that is connected to the gate region, a layer formed through the opening And one of the pair of wells; a second junction that is connected to the other of the pair of wells; and a third junction that is connected to the drain .
TW097137004A2007-09-262008-09-26Adjustable field effect rectifier
TWI456757B
(en)