TWI452107B - 切割晶粒黏合膜、半導體晶圓及半導體裝置 - Google Patents
切割晶粒黏合膜、半導體晶圓及半導體裝置 Download PDFInfo
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Description
本發明涉及一種切割晶粒黏合膜。更具體地,本發明涉及一種切割晶粒黏合膜,所述切割晶粒黏合膜包括具有預定範圍內的儲能模量的壓敏黏結劑層,因此能在環形框架內以保證穩定的黏結強度於晶粒黏貼程序中協助拾取時使得UV輻射能夠降低。
在半導體製造程序中,經電路設計的晶圓係經背面研磨,並層壓有切割膠帶或切割晶粒黏合膠帶,隨後藉由切割將大尺寸晶圓切成小晶片(chips)。然後,將分開的晶片藉由黏合程序黏合至基板(如PCB或引線框架)。也就是說,半導體製造程序包括:使晶圓形成為薄膜的背面研磨程序、將切割膠帶或切割晶粒黏合膠帶安裝在晶圓背面的安裝程序、將安裝後的晶圓切成相同大小之小片的切割程序、使UV光照射至經切割的晶圓的UV照射程序、拾取各個的晶片的拾取程序、以及將晶片黏合到支撐構件的晶粒黏合程序。在此,於安裝程序中切割膠帶貼附到晶圓背面,因此防止了晶圓的振動,穩固地支撐晶圓,並防止因切割程序中所用的刀片而在晶片上或晶片的側面上有裂縫形成。此外,在晶片黏合程序中使切割膜擴展以利於拾取。
切割膠帶分為壓敏黏結劑切割膠帶和UV固化切割膠帶。在這些切割膠帶中,UV固化切割膠帶常用於使晶圓成為薄的以及拾取各種尺寸的晶片。
當切割完成時,從UV固化切割膠帶背面照射UV光固化黏結劑層,以降低相對於晶圓的介面剝離強度,從而有利於個別晶片的拾取程序。為了在切割後封裝單獨的晶片以使得電子信號能施加至該晶片,需要將該晶片黏合至基板(如PCB或引線框架基板)的程序。此時,液體環氧樹脂被置於基板上,且個別的晶片黏貼至該基板上以致使該晶片黏合至基板上。此兩步驟程序-使用切割膠帶的切割程序和使用液體環氧樹脂的晶片黏合程序-在成本和產率方面有問題。因此,已進行大量研究來簡化這些程序。
近來,使用切割晶粒黏合膜的方法已愈來愈常被採用。在這些方法中,環氧膜被置於作為切割膠帶的膜上,並在切割膠帶的壓敏黏結劑和環氧膜之間進行拾取,因此習知的兩步驟程序被合併成一步驟程序。在這點上,該等方法在時間和產率方面更有優勢。
隨著多層結構和高度集成在半導體製程中實現,晶片變得更薄。當拾取薄晶片時,晶片可彎曲,且微小的外部衝擊有可能損壞晶片。因此,使拾取/黏合晶粒設備的拾取比現有厚膜晶圓的拾取具有較低的設備調節參數,是至關重要的。供拾取/黏合晶粒設備的拾取之用的設備調整參數可包括擴展程度、接腳(pin)數量、接腳上升高度、接腳上升速率、減壓壓力、底座類型等。具體地,接腳上升高度和接腳上升速率是拾取程序調整中的關鍵參數,但這兩個因素是在對於薄晶片實質有限的範圍內調節。當為了有利於拾取而增加接腳上升高度時,薄晶片可能破裂或受損,導致封裝後的可靠性變差。因此,為了有利於具有80μm或更小厚度的薄晶片圓的拾取,與用於拾取習知厚度晶圓的的切割膠帶相比,對於在UV固化後的晶圓切割膠帶必須具有非常低的剝離強度。
因為該原因,廣泛使用UV固化切割膠帶。然而,UV固化切割膠帶在長處理時間和高UV程序成本方面是不佳的。為了降低處理時間和成本,已開發出壓敏黏結劑切割膠帶。然而,當切割膠帶具有對環形框架的低黏結強度時,習知壓敏黏結劑切割膠帶在切割程序中導致環形框架分離或晶片蠕變。建議以雙層或用抗UV固化的材料塗佈環形框架的方法來解決此等問題,但這些方法也需要額外的程序。
此外,有人建議了使壓敏黏結劑層和黏合層之間的黏結強度與壓敏黏結劑層和環形框架之間的黏結強度有差異的方法。然而,該方法包括大量程序,導致產率下降,同時增加製造成本。
本發明的一態樣提供了一種切割晶粒黏合膜(例如塗佈環形框架),該切割晶粒黏合膜無需額外程序,能確保環形框架內的穩定黏結強度,有利於晶粒黏貼程序中的拾取,且在處理半導體晶片中不需要UV程序,從而簡化了程序、減少時間並解決成本問題。
所述切割晶粒黏合膜包括黏合層和與所述黏合層鄰接的壓敏黏結劑層,其中所述壓敏黏結劑層在25℃下具有400至600kPa的儲能模量和根據KS-A-01107標準測定的相對於所述黏合層的200至350mN/25mm的剝離強度。所述壓敏黏結劑層可藉由熱固化形成。
所述壓敏黏結劑層可具有根據KS-A-01107標準測定的相對於一環形框架的150至300mN/25mm的剝離強度。
所述壓敏黏結劑層可包括黏合劑樹脂和熱固化劑。在一個具體實施例中,所述壓敏黏結劑層可不含光引發劑。
所述壓敏黏結劑層可進一步包括矽烷偶聯劑。
所述黏合劑樹脂可具有150,000至700,000g/mol的重量平均分子量。
所述黏合劑樹脂可具有-55至-30℃的玻璃轉化溫度。
所述黏合劑樹脂在聚合後可不含乙烯基。
在一個具體實施例中,所述黏合劑樹脂可為(甲基)丙烯酸烷基酯、含羥基的(甲基)丙烯酸酯和含環氧基的(甲基)丙烯酸酯的共聚物。
所述黏合劑樹脂可為包括60至85wt%的所述(甲基)丙烯酸烷基酯、10至35wt%的所述含羥基的(甲基)丙烯酸酯和1至10wt%的所述含環氧基的(甲基)丙烯酸酯的共聚物。
基於100重量份的所述黏合劑樹脂,所述熱固化劑的含量可為3至10重量份。
本發明的另一態樣提供一種半導體晶圓。所述半導體晶圓包括貼附至所述晶圓之一面的所述切割晶粒黏合膜和固定於晶圓環形框架的所述切割晶粒黏合膜的所述壓敏黏結劑層。
本發明的又一個態樣提供一種使用所述切割晶粒黏合膜的半導體裝置。在一個具體實施例中,所述半導體裝置包括所述切割晶粒黏合膜的所述黏合層和安裝在所述黏合層上的半導體晶片。
由以下結合附圖的詳細說明中,本發明的以上和其它態樣、特徵和優點將變得明顯,其中:第1圖是根據本發明一個具體實施例的切割晶粒黏合膜的截面圖。
以下,現將詳細說明例示性的具體實施例。應注意的是,這些具體實施例僅用於說明目的,且不會以任何方式解釋為限制本發明。本發明的範圍應僅由所附申請專利範圍及其等價物限制。
除非另作說明,本發明之各組份的含量將以固體含量說明。此外,除非另作定義,術語“(甲基)丙烯酸酯”整體是指“丙烯酸酯”和“甲基丙烯酸酯”。此外,術語“(甲基)丙烯酸”整體是指“丙烯酸”和“甲基丙烯酸”。此外,術語“(甲基)丙烯醯胺”整體是指“丙烯醯胺”和“甲基丙烯醯胺”。
本發明的一個態樣提供了一種包括黏合層和與該黏合層鄰接的壓敏黏結劑層的切割晶粒黏合膜,其中上述壓敏黏結劑層在25℃下具有400至600kPa的儲能模量。在此範圍內,能獲得切割程序中的優異加工性,並在切割後容易實現與黏合層分離。具體地,壓敏黏結劑層在25℃下可具有410至590kPa的儲能模量。
第1圖是根據一個具體實施例的壓敏型切割晶粒黏合膜的截面圖。該切割晶粒黏合膜具有一結構,其中壓敏黏結劑層2沉積在基膜3上,黏合層1接著堆疊在壓敏黏結劑層2上。半導體晶片5貼附至黏合層1的上面。當拾取切成小片後的晶片時,貼附至晶片背面的黏合層容易與下方的壓敏黏結劑層分離,且晶粒黏合至如PCB或引線框架等支撐構件的表面。
壓敏黏結劑層2相對於黏合層1的剝離強度(B)可為200至350mN/25mm。此外,壓敏黏結劑層2相對於環形框架4的剝離強度(A)可為150至300 mN/25mm。剝離強度(A)和剝離強度(B)在具體範圍內時,可保證環形框架4上的穩定的黏結強度,且在鋸切和晶片黏貼程序中可順利地進行拾取。
本發明係根據韓國工業標準KS-A-01107(用於壓敏黏結劑膠帶和薄片的測試方法)測定剝離強度。將壓敏黏結劑層貼附至基板,藉由將2Kg重的壓輥以300mm/min的速度在其上往復一次來壓製樣品。壓製30分鐘後,將樣品的折疊部份翻轉180°,並剝離25mm樣品。然後,將樣品固定至拉伸試驗機的上夾具,並將該晶粒貼附黏結劑膜固定至拉伸試驗機的下夾具,隨後在剝離時測定負荷(mN/25mm),同時以300mm/min的拉伸速度拉伸。所述拉伸試驗機係使用Instron系列IX/s自動材料試驗機-3343。
本發明之“基板”可為一黏合層或一環形框架。當該基板為該黏合層時,測定該壓敏黏結劑層相對於該黏合層的剝離強度,且當該基板為該環形框架時,測定該壓敏黏結劑層相對於該環形框架的剝離強度。
在一個具體實施例中,該壓敏黏結劑層相對於該黏合層可具有根據KS-A-01107測定的200至350mN/25mm的剝離強度,且相對於該環形框架可具有根據KS-A-01107測定的150至300mN/25mm的剝離強度。在此範圍內,在切割和晶片黏合程序中可易於進行拾取。
在一個具體實施例中,該壓敏黏結劑層可包括一黏合劑樹脂和一熱固化劑。
丙烯酸黏合劑可在本發明中用作黏合劑樹脂。該黏合劑樹脂可具有150,000至700,000 g/mol的重量平均分子量。在此範圍內,可獲得優異的塗層形成性。具體地,黏合劑樹脂可具有500,000至700,000g/mol的重均分子量。在此範圍內,能獲得優異的塗層性能。
上述黏結劑在25℃下可具有1,500至3,500cps的黏度。在此範圍內,能獲得優異的塗層性能。
上述黏合劑樹脂在聚合後可不含乙烯基。
構成上述黏合劑樹脂的單體可具有-55至-30℃的玻璃轉化溫度,例如該單體可聚合形成具有約-55至約-30℃的玻璃轉化溫度的聚合物。在一個具體實施例中,黏合劑樹脂可為(甲基)丙烯酸烷基酯、含羥基的(甲基)丙烯酸酯和含環氧基的(甲基)丙烯酸酯的共聚物。
上述(甲基)丙烯酸烷基酯可包括(甲基)丙烯酸的C2至C20烷基酯。(甲基)丙烯酸烷基酯的實例可包括但不限於(甲基)丙烯酸-2-乙基己酯、(甲基)丙烯酸異辛酯、丙烯酸乙酯、丙烯酸正丁酯和甲基丙烯酸十八酯。具體地,可使用玻璃轉化溫度為-55至-30℃的(甲基)丙烯酸烷基酯。在此範圍內,室溫下能獲得優異的黏性。這些(甲基)丙烯酸烷基酯可單獨使用或以其兩種或更多種的組合使用。在黏合劑中,該(甲基)丙烯酸烷基酯的重複單元可以60至85wt%,較佳為65至80wt%的含量存在於共聚物中。在此範圍內,能獲得室溫下的優異黏性以及相對於黏合劑的優異剝離強度。
含羥基的(甲基)丙烯酸酯的實例可包括但不限於(甲基)丙烯酸-2-羥乙酯、(甲基)丙烯酸-4-羥丁酯、(甲基)丙烯酸-2-羥丙酯、(甲基)丙烯酸-2-羥丁酯、(甲基)丙烯酸-6-羥己酯、1,4-環己烷二甲醇單(甲基)丙烯酸酯、1-氯-2-羥丙基(甲基)丙烯酸酯、二乙二醇單(甲基)丙烯酸酯、1,6-己二醇單(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、新戊二醇單(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、三羥甲基乙烷二(甲基)丙烯酸酯、2-羥基-3-苯氧基丙基(甲基)丙烯酸酯、4-羥基環己基(甲基)丙烯酸酯、2-羥基-3-苯氧基(甲基)丙烯酸酯和環己烷二甲醇單(甲基)丙烯酸酯。具體地,可使用玻璃轉化溫度為-55至-30℃的含羥基的(甲基)丙烯酸酯。在此範圍內,室溫下能獲得優異的黏性。這些含羥基的(甲基)丙烯酸酯可單獨使用或以其兩種或更多種的組合使用。在黏合劑中,含羥基的(甲基)丙烯酸酯的重複單元可以10至35wt%,較佳為15至30wt%的含量存在於共聚物中。在此範圍內,室溫下能獲得優異的黏性並能呈現出相對於黏結劑的優異剝離強度。
含環氧基的(甲基)丙烯酸酯的實例可包括但不限於丙烯酸縮水甘油酯和甲基丙烯酸縮水甘油酯。具體地,可使用玻璃轉化溫度為-55至-30℃的含環氧基的(甲基)丙烯酸酯。在此範圍內,室溫下能獲得優異的黏性。這些含環氧基的(甲基)丙烯酸酯可單獨使用或以其兩種或更多種的組合使用。在黏合劑中,含環氧基的(甲基)丙烯酸酯的重複單元可以1至10wt%,較佳為3至8wt%的含量存在於共聚物中。在此範圍內,室溫下能獲得優異的黏性並能呈現出相對於黏結劑的優異剝離強度。
在一個具體實施例中,黏合劑樹脂可為包括60至85wt%的(甲基)丙烯酸烷基酯的重複單元、10至35wt%的含羥基的(甲基)丙烯酸酯的重複單元和1至10wt%的含環氧基的(甲基)丙烯酸酯的重複單元的共聚物。具體地,該黏合劑樹脂可為包括50至80wt%的丙烯酸-2-乙基己酯的重複單元、5至20wt%的丙烯酸異辛酯的重複單元、10至30wt%的含羥基的(甲基)丙烯酸酯的重複單元和1至10wt%的(甲基)丙烯酸縮水甘油酯的重複單元的共聚物。
黏合劑樹脂可具有-55至-30℃的玻璃轉化溫度。在此範圍內,室溫下能獲得優異的黏性。
黏合劑樹脂可藉由本領域已知的任何共聚方法製備。例如,黏合劑樹脂可用如乳化聚合、懸浮聚合、總體聚合等任何已知的聚合方法製備。包括偶氮二異丁腈等的聚合引發劑可用於聚合反應。
壓敏黏結劑層藉由熱固化形成。因此,該壓敏黏結劑層包括一熱固化劑,且可不包括一光引發劑。
可用的熱固化劑可包括但不限於異氰酸酯、環氧、吖啶、三聚氰胺、胺、醯亞胺、碳二亞胺和醯胺化合物。具體地,可使用異氰酸酯熱固化劑。該異氰酸酯熱固化劑的實例可包括但不限於2,4-三氯乙烯二異氰酸酯、2,6-三氯乙烯二異氰酸酯、氫化三氯乙烯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯甲烷-4,4-二異氰酸酯、1,3-雙(異氰酸酯基甲基)環己烷、四甲基二甲苯二異氰酸酯、1,5-萘二異氰酸酯、2,2,4-三甲基六亞甲基二異氰酸酯、三羥甲基丙烷的三氯乙烯二異氰酸酯加合物、三羥甲基丙烷的二甲苯二異氰酸酯加合物、三苯甲烷三異氰酸酯、亞甲基雙(三異氰酸酯)等。
基於100重量份的黏合劑樹脂,該熱固化劑可以3至10重量份之量存在。在此範圍內,能獲得適宜的黏性以提高拾取成功率,並能獲得高初始黏性以防止切割後的晶片在鋸切程序期間分散或與環形框架分離。在一個具體實施例中,基於100重量份的黏合劑樹脂,該熱固化劑可以5至7重量份之量存在。
該壓敏黏結劑層可進一步包括矽烷偶聯劑。當加入矽烷偶聯劑時,在將晶圓安裝在該切割晶粒黏合膜上並切割時,可獲得在該環形框架和該壓敏黏結劑層之間的優異穩定性。此外,能確保該環形框架和該壓敏黏結劑膜之間的可靠的穩定性而無需另外處理該環形框架,並能呈現與UV固化膜相似程度的蠕變性能。
基於100重量份的黏結劑樹脂,該矽烷偶聯劑可以0.1至5重量份之量存在,較佳為0.2至2重量份。
該矽烷偶聯劑的實例可包括選自由環氧基矽烷、巰基矽烷、氨基矽烷、乙烯基三氯矽烷、乙烯基三甲氧基矽烷、3-縮水甘油醚氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、2-氨基乙基-3-氨基丙基甲基二甲氧基矽烷和3-脲基丙基三乙氧基矽烷組成的組群中的至少一種,但不限於此。
該壓敏黏結劑層藉由向基膜塗佈或轉移形成。為此,該壓敏黏結劑層可進一步包括一溶劑。可使用本領域已知的任何溶劑,如甲乙酮。基於100重量份的固體壓敏黏結劑組合物,該溶劑可以50至500重量份之量存在,但不限於此。
該基膜可由各種聚合物膜形成,特別是由熱塑性塑膠膜。因為擴展可在切割程序後進行以用於拾取,且擴展後的剩餘晶片可在預定時間段後再次被拾取,考慮到恢復力,該熱塑性膜是適宜的。用於該基膜的聚合物實例可包括聚乙烯、聚丙烯、乙烯/丙烯共聚物、聚1-丁烯、乙烯/乙酸乙烯酯共聚物、聚乙烯/苯乙烯-丁二烯橡膠混合物,和如聚氯乙烯的聚烯烴膜等。此外,可將諸如聚乙二醇對苯二甲酸酯、聚碳酸酯和聚(甲基丙烯酸甲酯)的聚合物、諸如聚氨酯和聚醯亞胺-多元醇共聚物的熱塑性彈性體以及它們的混合物用於基膜。該基膜可具有30至300μm、較佳為50至200μm的厚度以具有高拉伸率和可加工性。
該壓敏黏結劑層可藉由直接塗佈而形成在基膜上,或可在離型膜上塗佈並乾燥後轉移至基膜上。該壓敏黏結劑層可用任何塗佈方法形成,只要該方法形成均勻的層,例如棒式塗佈、凹板塗佈、刮刀塗佈(comma coating)、逆轉輥塗佈、塗佈器塗佈、噴塗、浸塗等。該壓敏黏結劑層可具有3至40μm、較佳為3至30μm的厚度。在一個具體實施例中,該壓敏黏結劑層可為單層。
該壓敏黏結劑層2上的黏合層1係由膜狀的熱固化組合物形成,並要求對晶片打磨過的背面呈現有優異附著力。黏合層1可包括一具有高分子量和膜成形性的丙烯酸共聚物、一包括環氧樹脂的熱固化樹脂和一固化劑。例如,該丙烯酸共聚物可包括丙烯酸橡膠,所述丙烯酸橡膠為丙烯酸酯或甲基丙烯酸酯與丙烯腈的共聚物。雖然可使用任何固化後具有附著性的環氧樹脂,但可優選使用雙酚-A環氧樹脂、酚醛清漆環氧樹脂和甲酚醛清漆環氧樹脂,因為具有至少兩個用於固化反應的官能基團是至關重要的。上述固化劑可包括任何使用於黏合層之製備中常用的固化劑。
此外,該黏合層1可包括固化促進劑以固化環氧樹脂。例如,可使用咪唑或胺固化促進劑。另外,該黏合層1可包括至少一種矽烷偶聯劑以增強對晶圓的附著力。
黏合層也可由任何塗佈法形成,只要該方法可形成均勻的層。黏合層可具有5至100μm、優選10至80μm的厚度。
本發明的另一態樣提供一種半導體晶圓。該半導體晶圓包括貼附至該晶圓之一面的該切割晶粒黏合膜的黏合層和固定至一晶圓環形框架的該切割晶粒黏合膜的壓敏黏結劑層。
該半導體晶圓可藉由將該切割晶粒黏合膜的黏合層層壓在該半導體晶圓的背面上並將該壓敏黏結劑層固定至該晶圓環形框架來製造。
本發明的另一個態樣提供一種半導體裝置。在一個具體實施例中,該半導體裝置包括該切割晶粒黏合膜的黏合層和固定至該黏合層上的半導體晶片。該黏合層具有安裝在其一面上的半導體晶片,並在其另一面處貼附至基板,如PCB或引線框架基板。或者,該黏合層具有安裝在其另一面上的其他半導體晶片。
上述半導體裝置可用本領域已知的任何方法製作。在一個具體實施例中,用切割裝置將具有貼附於其上的該切割晶粒黏合膜的半導體晶片切成個別的晶片。該晶片可安裝在基板或另一個晶片上。此時,該壓敏黏結劑層和該黏合層可彼此分離,以使得只有該黏合層貼附在該晶片上。
以下將參照以下實施例更詳細地解釋本發明的構成和功能。提供這些實施例僅用於說明的目的且不會以任何方式解釋成限制本發明。
對本領域技術人員顯而易見的細節的說明將會被省略。
將500g作為有機溶劑的乙酸乙酯加入到於一側裝有回流冷凝器、於另一側裝有溫度計以及於第三側裝有滴液漏斗的2L四口燒瓶中。在燒瓶中加熱上述溶液至回流後(77~78℃),藉由混合600g單體混合物製備混合溶液,該單體混合物包括如表1中所列具0.15g偶氮二異丁腈之組成物的單體和,並在77至88℃下3小時內用滴液漏斗滴入燒瓶中。此時,在以200rpm攪拌的同時滴加以上混合溶液。完成滴加後,將反應物在80至88℃下老化4小時,20分鐘內將150g乙酸乙酯和0.15g偶氮二異丁腈加入該反應物中並放置4小時,隨後測定黏度和固體含量,並終止反應,從而製備作為丙烯酸共聚物的丙烯酸多元醇黏合劑樹脂(LB01至LB03)。該經聚合的產物具有1500至3500cps/25℃的黏度和40%的固體含量。
在以300rpm攪拌的同時,將240g甲基丙烯酸-2-異氰酸酯基乙酯和30ppm的DBTDL與製備例1所製備的丙烯酸多元醇黏合劑樹脂混合,並在50至55℃下反應8小時。在甲基丙烯酸-2-異氰酸酯基乙酯單體的異氰酸酯基與黏結劑的羥基反應至在FT-IR上消失的反應終點,將乙酸乙酯添加至該反應物,隨後冷却,從而合成具有45%固體含量的光固化丙烯酸黏結劑。
單位:g)
2-EHA:丙烯酸-2-乙基己酯
IOA:丙烯酸異辛酯
2-HEMA:甲基丙烯酸-2-羥甲酯
2-HEA:丙烯酸-2-羥乙酯
GMA:甲基丙烯酸縮水甘油醚酯
MMA:甲基丙烯酸甲酯
將熱固化劑添加至根據表2所列組成物於製備例1至5中所製備的各黏合劑樹脂,並攪拌1小時以製備壓敏黏結劑組合物。此時,將甲乙酮用作溶劑以製備25%的壓敏黏結劑組合物。將該壓敏黏結劑組合物沉積在100μm聚烯烴膜的一面上,並在80℃乾燥2分鐘,從而製得10μm厚的壓敏黏結劑層,將該壓敏黏結劑層在40℃老化5天。
L:AK-75(Aekyung Chemical有限公司)
M:TKA-100(Asahi Kasie公司)
將69重量份的丙烯酸橡膠黏結劑(SG-P3,Nagase Chemtex,17%)、13重量份的環氧樹脂(EPPN-501H,Nippon Kayaku,81%)、7重量份的酚類固化劑(HF-1M,Meiwa,50%)、1重量份的矽烷添加劑(KBM-403,Shinetsu,100%)、0.5重量份的固化促進劑(TPP-K,HOKKO,100%)以及9.5重量份的填料(R-972,Degussa,100%)加入至1L圓柱形燒瓶中,並將環己酮加入至其中,從而製得黏結劑組合物。以5000rpm分散該黏結劑組合物30分鐘,並用200目過濾器過濾。用塗佈器將過濾後的黏結劑組合物沉積在Toyobo TS-002(38μm厚的離型PET)至20μm的厚度以製備黏合膜。在100℃乾燥該黏合膜20分鐘,並在室溫放置1天。
層壓所述壓敏黏結劑層和黏合層來製備用於處理半導體晶圓的切割晶粒黏合膜。
測定切割晶粒黏合膜的物理性能如下,且結果示於表3中。
根據韓國工業標準KS-A-01107第8節進行測試。將每個25mm寬、250mm長的壓敏黏結劑層貼附至黏合層,並藉由將2Kg重的壓輥以300mm/min的速度在其上往復一次來壓製樣品。壓製30分鐘後,將樣品的折疊部份翻轉180°,並剝離25mm樣品。然後,將樣品固定至拉伸試驗機的上夾具,並將該黏合層固定至拉伸試驗機的下夾具,隨後在剝離時測定負荷(mN/25mm),同時以300mm/min的拉伸速度拉伸。將Instron系列IX/s自動材料試驗機-3343用作上述拉伸試驗機。
根據韓國工業標準KS-A-01107測定相對於環形框架SUS304的剝離強度。進行的程序和測定相對於黏合層的剝離強度的程序相同,不同之處在於用SUS304代替黏貼晶片的黏結劑膜。
將製得的壓敏黏結劑組合物以8至12μm的厚度塗佈至聚乙二醇對苯二甲酸酯膜的離型面並乾燥,隨後在40℃老化5天。為了評價蠕變,將樣品黏貼至1.5cm×1.5cm面積的玻璃基板並在室溫下放置1天。用萬能試驗機(UTM)對樣品施加1kgf1小時後測定樣品的推動距離。
用探針黏性測試儀(tacktoc-2000)測定黏性。依據ASTM D2979-71,將探針的尖端以10±0.1mm/sec的速度在9.79±1.01kPa的接觸負荷下與非UV固化的各壓敏黏結劑接觸1.0±0.01秒,隨後與樣品分離。將使尖端與樣品分離所需的最大的力定義為樣品的黏性值。
將各壓敏黏結劑層形成為具有200μm厚度的層壓體,接著將該層壓體切成8mm直徑的環形樣品。用ARES流變學流變儀(TA Instruments)測定儲能模量。測定在25℃、10Hz的頻率和10%的應變下進行。
晶片拾取程序是在切割程序之後將晶片固定在PCB或堆疊晶片上的程序。用晶粒黏合器(SDB-10M,Mechatronics)在矽晶圓的中心部份對100個晶片進行拾取測試,且結果示於表3中。
切割各切割晶粒黏合膜並評價相對於環形框架SUS304的穩定性(○:優異的穩定性,△:平均穩定性,X:降低的穩定性)。
如表3所示,根據實施例1至6的壓敏黏結劑層在室溫下具有400至600kPa的儲能模量和100%的拾取成功率,隨著固化劑含量增加儲能模量增大,並具有低蠕變性能和相對於環形框架的高剝離強度。根據比較例1和2的壓敏黏結劑層不宜用於拾取,且根據比較例3和4的壓敏黏結劑層具有不合適的剝離強度和蠕變性能以及較差的環形框架穩定性。
儘管文中已公開了一些具體實施例,本領域技術人員應理解的是,這些具體實施例僅以說明的方式提供,並可進行各種修改、變更和替換而不背離本發明的精神和範圍。因此,本發明的範圍僅由所附申請專利範圍及其等效方案限定。
1...黏合層
2...壓敏黏結劑層
3...基膜
4...環形框架
5...半導體晶片
A...壓敏黏結劑層相對於環形框架的剝離強度
B...壓敏黏結劑層相對於黏合層的剝離強度
第1圖是根據本發明一個具體實施例的切割晶粒黏合膜的截面圖。
1...黏合層
2...壓敏黏結劑層
3...基膜
4...環形框架
5...半導體晶片
A...壓敏黏結劑層相對於環形框架的剝離強度
B...壓敏黏結劑層相對於黏合層的剝離強度
Claims (12)
- 一種切割晶粒黏合膜,其包括:黏合層;和與所述黏合層鄰接的壓敏黏結劑層,所述壓敏黏結劑層在25℃下具有400kPa至600kPa的儲能模量和根據KS-A-01107標準測定的相對於所述黏合層的200至350mN/25mm的剝離強度,其中所述壓敏黏結劑層包括黏合劑樹脂和熱固化劑,以及其中所述黏合劑樹脂為(甲基)丙烯酸烷基酯、含羥基的(甲基)丙烯酸酯和含環氧基的(甲基)丙烯酸酯的共聚物。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述壓敏黏結劑層係藉由熱固化形成。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述壓敏黏結劑層具有根據KS-A-01107標準測定的相對於一環形框架的150至300mN/25mm的剝離強度。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述壓敏黏結劑層不含光引發劑。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述壓敏黏結劑層進一步包括矽烷偶聯劑。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述黏合劑樹脂具有150,000g/mol至700,000g/mol的重量平均分子量。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述黏合劑樹脂具有-55℃至-30℃的玻璃轉化溫度。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述黏合劑樹脂在聚合後不含乙烯基。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中所述黏合劑樹脂為包括60wt%至85wt%的所述(甲基)丙烯酸烷基酯的重複單元、10wt%至35wt%的所述含羥基的(甲基)丙烯酸酯的重複單元和1wt%至10wt%的所述含環氧基的(甲基)丙烯酸酯的重複單元的共聚物。
- 如申請專利範圍第1項所述的切割晶粒黏合膜,其中基於100重量份的所述黏合劑樹脂,所述熱固化劑的含量為3至10重量份。
- 一種半導體晶圓,其包括貼附至所述晶圓之一面的如申請專利範圍第1至10項中任一項之所述的切割晶粒黏合膜的黏合層,以及固定於晶圓環形框架的所述切割晶粒黏合膜的所述壓敏黏結劑層。
- 一種半導體裝置,其包括如申請專利範圍第1至10項中任一項之所述的切割晶粒黏合膜的所述黏合層和安裝在所述黏合層上的半導體晶片。
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WO2014054781A1 (ja) * | 2012-10-05 | 2014-04-10 | リンテック株式会社 | 保護膜形成層付ダイシングシートおよびチップの製造方法 |
KR101635265B1 (ko) * | 2013-06-19 | 2016-07-01 | 주식회사 엘지화학 | 점착 필름 |
JP6278178B2 (ja) * | 2013-11-11 | 2018-02-14 | 日立化成株式会社 | ウエハ加工用テープ |
KR101722137B1 (ko) * | 2014-01-03 | 2017-03-31 | 주식회사 엘지화학 | 다이싱 필름 및 다이싱 다이본딩 필름 |
WO2016152599A1 (ja) * | 2015-03-23 | 2016-09-29 | 富士フイルム株式会社 | 積層体、仮接着用組成物および仮接着膜 |
SG11201808291YA (en) * | 2016-03-30 | 2018-10-30 | Lintec Corp | Semiconductor processing sheet |
CN109096939B (zh) * | 2018-08-01 | 2021-04-06 | 深圳昌茂粘胶新材料有限公司 | 一种专门用于高速smt贴片机用接驳胶带及其制备方法 |
TWI716243B (zh) * | 2019-12-27 | 2021-01-11 | 天虹科技股份有限公司 | 晶圓薄化製程後之黏合劑去除方法 |
JP7465099B2 (ja) * | 2020-02-06 | 2024-04-10 | リンテック株式会社 | 保護膜形成用複合シート、及び保護膜付きチップの製造方法 |
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US8609515B2 (en) | 2013-12-17 |
TW201226519A (en) | 2012-07-01 |
KR20120076270A (ko) | 2012-07-09 |
KR101351622B1 (ko) | 2014-01-15 |
CN102533147A (zh) | 2012-07-04 |
CN102533147B (zh) | 2014-08-27 |
US20120171844A1 (en) | 2012-07-05 |
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