TWI451200B - Exposure apparatus and exposure method - Google Patents
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- TWI451200B TWI451200B TW094138711A TW94138711A TWI451200B TW I451200 B TWI451200 B TW I451200B TW 094138711 A TW094138711 A TW 094138711A TW 94138711 A TW94138711 A TW 94138711A TW I451200 B TWI451200 B TW I451200B
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- 238000005286 illumination Methods 0.000 claims description 8
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- 230000001360 synchronised effect Effects 0.000 description 7
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- 238000012544 monitoring process Methods 0.000 description 4
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- 238000004064 recycling Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
本發明是關於一種曝光裝置，尤其是關於一種使靶材料電漿化而產生脈衝光，並以脈衝光進行曝光的曝光裝置以及曝光方法。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an exposure apparatus, and more particularly to an exposure apparatus and an exposure method for plasma-forming a target material to generate pulsed light and exposing it with pulsed light.
先前，於使用有脈衝光之曝光裝置中，自曝光裝置側對光源進行發光指示(觸發)，而光源則以其為依據產生曝光光線。即，曝光裝置側以使裝置之或物台驅動與時序一致之方式觸發光源而進行曝光動作。藉此，可於曝光區域內獲得均一曝光量。Previously, in an exposure apparatus using pulsed light, a light source was illuminated (triggered) from the side of the exposure apparatus, and the light source was used to generate exposure light. That is, the exposure device side performs an exposure operation by triggering the light source so that the device or the stage drive coincides with the timing. Thereby, a uniform exposure amount can be obtained in the exposure area.
另一方面，於某種EUV光源中，間隙性供應靶材料並使其電漿化，而使用由電漿所輻射之X線(EUV光)。至於如此之該光源，存有液滴．雷射電漿X線源，其例如自噴嘴前端滴落液滴，並對液滴照射雷射光使之電漿化。On the other hand, in some EUV light sources, the target material is intermittently supplied and plasmatized, and X-rays (EUV light) radiated by the plasma are used. As for the light source, there are droplets. A laser plasma X-ray source, for example, drops droplets from the front end of the nozzle and irradiates the droplets with laser light to plasma.
【專利文獻1】日本專利早期公開第2000－215998號公報。[Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-215998.
然而，於如此之光源中，EUV光所發光之時刻，依存於靶材料所供應之時序，而與曝光裝置內部之時序並無關是。為此，即使自曝光裝置側觸發光源，亦不會以曝光裝置所期望之時序使EUV光發光。該時序之偏差(延遲)最大為光源重複頻率之倒數。例如重複頻率為1 kHz，則最大延遲為1 ms。However, in such a light source, the timing at which the EUV light is emitted depends on the timing at which the target material is supplied, and is independent of the timing inside the exposure device. For this reason, even if the light source is triggered from the exposure device side, the EUV light is not emitted at the timing desired by the exposure device. The deviation (delay) of this timing is at most the reciprocal of the repetition frequency of the light source. For example, if the repetition frequency is 1 kHz, the maximum delay is 1 ms.
為此，由於曝光裝置載物台之啟動與EUV光發光時刻之偏差，因此曝光區域內之掃描開始部分以及掃描最終部中所照射之脈衝數於最差時不足一個脈衝，故而導致區域內之曝光量均一性惡化。Therefore, since the start of the exposure device stage and the EUV light emission timing are different, the number of pulses irradiated in the scanning start portion and the scanning final portion in the exposure region is less than one pulse at the worst, thereby causing the region to be Exposure uniformity deteriorates.
本發明是鑒於如此之先前問題開發研製而成者，其目的在於提供一種曝光裝置以及曝光方法，其即使於曝光用光源中使用將靶材料電漿化而產生之脈衝光時，亦可獲得良好之曝光量均一性。The present invention has been developed in view of such a prior problem, and an object of the invention is to provide an exposure apparatus and an exposure method which can be obtained even when pulsed light generated by plasma-treating a target material is used in an exposure light source. The exposure is uniform.
本發明第1觀點之曝光裝置，其特徵在於具有發光機構，其使間歇性所供應的靶材料電漿化而產生脈衝光；標線片載物台，其具備照射有上述脈衝光的標線片；感應基板載物台，其配置有照射有於上述標線片經過圖案化的脈衝光的感應基板；控制機構，其於開始在上述感應基板上進行曝光前，以依據上述感應基板載物台的驅動時序及上述脈衝光的發光時序，而使曝光開始點或者曝光結束點與上述發光時序一致的方式，控制上述感應基板載物台。An exposure apparatus according to a first aspect of the present invention is characterized by comprising: an illuminating means for plasma-generating a target material supplied intermittently to generate pulsed light; and a reticle stage having a reticle irradiated with the pulsed light a sensing substrate carrier configured with an inductive substrate irradiated with patterned pulsed light of the reticle; and a control mechanism for loading the substrate according to the sensing substrate before performing exposure on the sensing substrate The driving substrate of the stage and the timing of the light emission of the pulse light control the substrate of the sensing substrate such that the exposure start point or the exposure end point coincides with the light emission timing.
本發明第2觀點之曝光裝置，其特徵在於具有發光機構，其使間歇性所供應的靶材料電漿化而產生脈衝光；標線片載物台，其具備照射有上述脈衝光的標線片；感應基板載物台，其配置有照射有於上述標線片經過圖案化的脈衝光的感應基板；控制機構，其於開始在上述感應基板上進行曝光前，以依據上述感應基板載物台的驅動時序及上述脈衝光的發光時序，而使曝光開始點或者曝光結束點與發光時序一致的方式，控制上述發光時序。An exposure apparatus according to a second aspect of the present invention is characterized by comprising: an illuminating means for plasma-generating a target material supplied intermittently to generate pulsed light; and a reticle stage having a reticle irradiated with the pulsed light a sensing substrate carrier configured with an inductive substrate irradiated with patterned pulsed light of the reticle; and a control mechanism for loading the substrate according to the sensing substrate before performing exposure on the sensing substrate The driving timing of the stage and the lighting timing of the pulse light are controlled such that the exposure start point or the exposure end point coincides with the light emission timing.
本發明第3觀點之曝光裝置是如本發明第2觀點所述之曝光裝置，其中透過使上述脈衝光的相位產生變化而調整上述發光時序。An exposure apparatus according to a second aspect of the present invention is the exposure apparatus according to the second aspect of the present invention, wherein the light emission timing is adjusted by changing a phase of the pulse light.
本發明第4觀點之曝光裝置是如本發明第2觀點所述之曝光裝置，其中透過使上述脈衝光的發光頻率產生變化而調整上述發光時序。An exposure apparatus according to a second aspect of the present invention is the exposure apparatus according to the second aspect of the present invention, wherein the light emission timing is adjusted by changing a light emission frequency of the pulse light.
本發明第5觀點之曝光裝置是如本發明第1觀點至第4觀點中任何一項所述之曝光裝置，其中藉由檢測機構預先檢測上述脈衝光的發光時序。The exposure apparatus according to any one of the first to fourth aspects of the present invention, wherein the detection means detects the light emission timing of the pulse light in advance.
本發明第6觀點之曝光裝置是如本發明第1觀點至第4觀點中任何一項所述之曝光裝置，其中依據上述供應機構中上述靶材料的供應時序而求得上述脈衝光的發光時序。The exposure apparatus according to any one of the first to fourth aspects of the present invention, wherein the light-emitting timing of the pulse light is obtained according to a supply timing of the target material in the supply mechanism .
本發明第7觀點之曝光裝置是如本發明第6觀點所述之曝光裝置，其中藉由檢測出上述靶材料的供應時刻而求得上述靶材料的供應時序。An exposure apparatus according to a seventh aspect of the present invention is the exposure apparatus according to the sixth aspect of the present invention, wherein the supply timing of the target material is obtained by detecting a supply timing of the target material.
本發明第8觀點之曝光裝置是如本發明第6觀點所述之曝光裝置，其中藉由供應上述靶材料的供應機構的驅動控制信號而求得上述靶材料的供應時序。An exposure apparatus according to a sixth aspect of the invention is the exposure apparatus according to the sixth aspect of the invention, wherein the supply timing of the target material is obtained by a drive control signal of a supply mechanism that supplies the target material.
本發明第9觀點之曝光裝置是如本發明第1觀點至第8觀點中任何一項所述之曝光裝置，其中上述感應基板載物台，以固定的控制週期受到驅動控制。The exposure apparatus according to any one of the first to eighth aspects of the present invention, wherein the induction substrate stage is driven and controlled at a fixed control cycle.
本發明第10觀點之曝光裝置是如本發明第9觀點所述之曝光裝置，其中上述控制機構，以將上述控制週期與上述脈衝光的週期進行同步調整之方式開始曝光。An exposure apparatus according to a ninth aspect of the present invention, wherein the control means starts exposure by adjusting the control period and the period of the pulse light in synchronization.
本發明第11觀點之曝光裝置是如本發明第10觀點所述之曝光裝置，其中上述控制機構，以使上述感應基板載物台的啟動(approach run)開始時刻延遲的方式，進行上述同步調整。The exposure apparatus according to the tenth aspect of the present invention, wherein the control unit performs the synchronization adjustment so as to delay an start of an approach run of the induction substrate stage. .
本發明第12觀點之曝光裝置是如本發明第11觀點所述之曝光裝置，其中上述控制機構將上述啟動開始時刻的延遲時間設為最小。An exposure apparatus according to a twelfth aspect of the present invention, wherein the control means sets a delay time of the start start time to a minimum.
本發明第13觀點之曝光方法，其是使用使間歇性所供應的靶材料電漿化而產生脈衝光的發光機構而於感應基板上對圖案進行曝光者，其特徵在於，於開始在上述感應基板上進行曝光前，測定上述脈衝光的發光時序。According to a thirteenth aspect of the present invention, in the exposure method of the present invention, the pattern is exposed on the sensing substrate by using an illuminating mechanism that generates a pulsed light by ionizing the target material supplied intermittently, and is characterized in that the sensing is started. The light emission timing of the pulse light is measured before exposure on the substrate.
本發明第14觀點之曝光方法是如本發明第13觀點所述之曝光方法，其中依據上述靶材料的供應時序而求出上述脈衝光的發光時序。The exposure method according to the fourteenth aspect of the present invention, wherein the light emission timing of the pulse light is obtained based on a supply timing of the target material.
本發明第15觀點之曝光方法是如本發明第13觀點所述之曝光方法，其中藉由檢測出上述脈衝光的強度而求出上述脈衝光的發光時序。The exposure method according to a thirteenth aspect of the present invention, wherein the light emission timing of the pulse light is obtained by detecting an intensity of the pulse light.
本發明第16觀點之曝光裝置，其特徵在於具有發光機構，其使間歇性所供應的靶材料電漿化而產生脈衝光；標線片載物台，其具備照射有上述脈衝光的標線片；感應基板載物台，其配置有照射有於上述標線片經過圖案化的脈衝光的感應基板；控制機構，其於開始在上述感應基板上進行曝光前，以依據上述感應基板載物台的驅動條件及上述脈衝光的發光條件，而使曝光開始點或者曝光結束點與上述脈衝光的發光時序一致的方式，控制上述感應基板載物台。An exposure apparatus according to a sixteenth aspect of the present invention, characterized by comprising: an illuminating means for plasmaizing a target material supplied intermittently to generate pulsed light; and a reticle stage having a reticle irradiated with the pulsed light a sensing substrate carrier configured with an inductive substrate irradiated with patterned pulsed light of the reticle; and a control mechanism for loading the substrate according to the sensing substrate before performing exposure on the sensing substrate The driving condition of the stage and the light-emitting condition of the pulse light control the substrate of the sensing substrate such that the exposure start point or the exposure end point coincides with the light-emitting timing of the pulse light.
本發明的曝光裝置中，於開始在感應基板上進行曝光前，以依據感應基板載物台的驅動時序與脈衝光的發光時序，而使曝光開始點或者曝光結束點與發光時序一致的方式，對感應基板載物台進行控制，因此即使於曝光用的光源中使用將靶材料電漿化而產生的脈衝光的情形時，亦可獲得良好的曝光量均一性。In the exposure apparatus of the present invention, before the exposure on the sensing substrate is started, the exposure start point or the exposure end point is aligned with the light emission timing in accordance with the driving timing of the sensing substrate stage and the light emission timing of the pulse light. Since the sensing substrate stage is controlled, even when pulse light generated by plasma-forming the target material is used for the light source for exposure, good exposure uniformity can be obtained.
本發明的曝光裝置中，於開始在感應基板上進行曝光前，以依據感應基板載物台的驅動時序與脈衝光的發光時序，而使曝光開始點或者曝光結束點與發光時序一致的方式控制發光時序，因此即使於曝光用的光源中使用將靶材料電漿化而產生的脈衝光的情形時，亦可獲得良好的曝光量均一性。In the exposure apparatus of the present invention, before the exposure on the sensing substrate is started, the exposure start point or the exposure end point is controlled in accordance with the driving timing of the sensing substrate stage and the emission timing of the pulse light to match the emission timing. Since the light emission timing is used, even when pulsed light generated by plasmalizing the target material is used in the light source for exposure, good exposure amount uniformity can be obtained.
本發明的曝光裝置中，於開始在感應基板上進行曝光前，以依據感應基板載物台的驅動條件與脈衝光的發光條件，而使曝光開始點或者曝光結束點與脈衝光的發光時序一致的方式，控制感應基板載物台，因此即使於曝光用光源中使用將靶材料電漿化而產生的脈衝光的情形時，亦可獲得良好的曝光量均一性。In the exposure apparatus of the present invention, before the exposure on the sensing substrate is started, the exposure start point or the exposure end point is aligned with the emission timing of the pulse light in accordance with the driving condition of the sensing substrate stage and the lighting condition of the pulse light. In the case of controlling the substrate stage, even when pulsed light generated by plasmalizing the target material is used in the light source for exposure, good exposure uniformity can be obtained.
本發明的曝光方法中，於曝光開始前測定脈衝光的發光時序，因此即使於曝光用的光源中使用將靶材料電漿化而產生的脈衝光的情形時，亦可把握發光時序，並以此為依據控制曝光量均一性。In the exposure method of the present invention, since the light emission timing of the pulse light is measured before the start of the exposure, even when the pulse light generated by the plasma of the target material is used for the light source for exposure, the light emission timing can be grasped and This is based on controlling the uniformity of exposure.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。The above and other objects, features and advantages of the present invention will become more <RTIgt;
以下，使用圖式就本發明之實施形態加以詳細說明。Hereinafter, embodiments of the present invention will be described in detail using the drawings.
圖1表示有本發明之曝光裝置之第1實施形態。於該實施形態中，曝光用之光源中使用有採用液滴靶之雷射電漿X線源。該實施形態之曝光裝置，具有EUV光產生部11以及曝光部13。Fig. 1 shows a first embodiment of an exposure apparatus of the present invention. In this embodiment, a laser plasma X-ray source using a droplet target is used for the light source for exposure. The exposure apparatus of this embodiment has an EUV light generating unit 11 and an exposure unit 13.
EUV光產生部11使靶材料電漿化並產生包含EUV光之脈衝光。該EUV光產生部11具有真空室15。於真空室15內，配置有反射EUV光之聚光鏡17，以及檢測EUV光之EUV光檢測器19。The EUV light generating portion 11 plasmas the target material and generates pulsed light including EUV light. This EUV light generating unit 11 has a vacuum chamber 15. In the vacuum chamber 15, a condensing mirror 17 that reflects EUV light and an EUV photodetector 19 that detects EUV light are disposed.
於真空室15上側，配置有供應靶材料之靶材料供應裝置21。該靶材料供應裝置21，具有開口於真空室15內之噴嘴23，以及將靶材料供應至噴嘴23之供應部25。於真空室15下側，配置有回收靶材料之回收機構27。On the upper side of the vacuum chamber 15, a target material supply device 21 for supplying a target material is disposed. The target material supply device 21 has a nozzle 23 that opens in the vacuum chamber 15, and a supply portion 25 that supplies the target material to the nozzle 23. On the lower side of the vacuum chamber 15, a recovery mechanism 27 for recovering the target material is disposed.
於真空室15側方，配置有雷射光光學系統33，其將來自產生雷射光之雷射裝置29的雷射光31導入至真空室15內。來自雷射裝置29之雷射光31，於經過反射鏡35、37反射後，藉由透鏡39而聚光，並介以形成於真空室15之雷射導入窗41而導入至真空室15內。On the side of the vacuum chamber 15, a laser light optical system 33 is disposed which introduces the laser light 31 from the laser device 29 that generates the laser light into the vacuum chamber 15. The laser light 31 from the laser device 29 is reflected by the mirrors 35 and 37, collected by the lens 39, and introduced into the vacuum chamber 15 via the laser introduction window 41 formed in the vacuum chamber 15.
雷射裝置29以及靶材料供應裝置21之供應部25，受到雷射．靶材料控制裝置43之控制。The laser device 29 and the supply portion 25 of the target material supply device 21 are subjected to laser irradiation. Control of the target material control device 43.
曝光部13具有真空室45。於真空室45內，配置有標線片載物台47以及晶圓載物台49。由EUV光產生部11所產生之EUV光自EUV光導入部51導入至真空室45內之照明光學系統53中，並藉由照明光學系統53而導入至配置於標線片載物台47下側之標線片55的下面。於標線片55經過圖案化並得到反射之EUV光，介以投影光學系統57照射至作為配置於晶圓載物台49上面之感應基板的晶圓59上，由此進行曝光。該實施形態中將驅動標線片載物台47以及晶圓載物台49而進行掃描曝光。The exposure unit 13 has a vacuum chamber 45. A reticle stage 47 and a wafer stage 49 are disposed in the vacuum chamber 45. The EUV light generated by the EUV light generating unit 11 is introduced into the illumination optical system 53 in the vacuum chamber 45 from the EUV light introducing unit 51, and introduced into the reticle stage 47 by the illumination optical system 53. Below the side of the reticle 55. The EUV light which is patterned and reflected in the reticle 55 is irradiated onto the wafer 59 which is the sensing substrate disposed on the wafer stage 49 via the projection optical system 57, thereby performing exposure. In this embodiment, the reticle stage 47 and the wafer stage 49 are driven to perform scanning exposure.
於圖1中，符號61表示控制裝置。該控制裝置61，輸入來自EUV光檢測器19以及雷射．靶材料控制裝置43之信號。又，由標線片載物台47以及晶圓載物台49輸入驅動控制信號。繼而，對標線片載物台47、晶圓載物台49以及雷射．靶材料控制裝置43進行控制。In Fig. 1, reference numeral 61 denotes a control device. The control device 61 is input from the EUV light detector 19 and the laser. The signal of the target material control device 43. Further, a drive control signal is input from the reticle stage 47 and the wafer stage 49. Then, the reticle stage 47, the wafer stage 49 and the laser. The target material control device 43 performs control.
上述曝光裝置中，藉由靶材料供應裝置21之供應部25，自噴嘴23之前端，間歇性噴出包含例如液化氙之液滴靶63。經噴出之靶63到達特定位置(聚光鏡17之焦點)後，自雷射裝置29出射有雷射光31，並介以透鏡39而將其聚光於靶63上，以此使靶材料電漿化。In the above-described exposure apparatus, the droplet target 63 including, for example, liquefied ruthenium is intermittently ejected from the front end of the nozzle 23 by the supply portion 25 of the target material supply device 21. After the ejected target 63 reaches a specific position (the focus of the condensing mirror 17), the laser light 31 is emitted from the laser device 29, and is condensed on the target 63 via the lens 39, thereby plasma-forming the target material. .
電漿65所放出之EUV光67通過聚光鏡17而聚光，並導入至曝光部13之照明光學系統53中。由照明光學系統53所出射之EUV光67將入射至標線片載物台47之標線片55並被反射。標線片55之反射光將入射至投影光學系統57中，並將標線片55上之微細圖案成像於塗布有抗蝕劑之晶圓59上。The EUV light 67 emitted from the plasma 65 is condensed by the condensing mirror 17 and introduced into the illumination optical system 53 of the exposure unit 13. The EUV light 67 emitted by the illumination optical system 53 will be incident on the reticle 55 of the reticle stage 47 and reflected. The reflected light of the reticle 55 will be incident on the projection optical system 57, and the fine pattern on the reticle 55 will be imaged on the resist-coated wafer 59.
於此，雷射裝置29以及靶材料供應裝置21之供應部25，藉由雷射．靶控制裝置43，而於靶63位於特定位置(聚光鏡17之焦點)時以雷射光31照射靶63之方式控制時序。例如，可透過調整自雷射裝置29朝向靶63之雷射光的發光時序而得到控制。再者，該調整可藉由以下方式進行，即例如透過EUV光檢測器19等檢測器檢測EUV光之發光狀態。又，將由雷射裝置29所射出之雷射光之脈衝週期與靶材料之供應週期(與靶63通過聚光鏡17之焦點之週期相同)調整為所設計之週期。Here, the laser device 29 and the supply portion 25 of the target material supply device 21, by means of laser. The target control device 43 controls the timing so that the laser light 31 illuminates the target 63 when the target 63 is at a specific position (the focus of the condensing mirror 17). For example, it can be controlled by adjusting the light emission timing of the laser light from the laser device 29 toward the target 63. Furthermore, the adjustment can be performed by detecting the light-emitting state of the EUV light by, for example, a detector such as the EUV photodetector 19. Further, the pulse period of the laser light emitted by the laser device 29 is adjusted to the designed period by the supply period of the target material (same period as the period of the target 63 passing through the focus of the condensing mirror 17).
另一方面，如圖2所示，晶圓載物台49之軌道追蹤控制為離散性的，其驅動控制週期為Ds。又，電漿65之發光亦為離散性的，其EUV光(亦稱為脈衝光)之發光週期為De，而兩者並不同步。On the other hand, as shown in FIG. 2, the track tracking control of the wafer stage 49 is discrete, and the drive control period is Ds. Moreover, the light emission of the plasma 65 is also discrete, and the EUV light (also referred to as pulsed light) has an emission period of De, and the two are not synchronized.
繼而，於1次曝光照射之掃描曝光中，自晶圓載物台49之啟動開始起直至曝光開始為止之時間Tse，於生成晶圓載物台49軌道之時刻上是已知的。又，使啟動開始之前之驅動控制時序為時間原點0，則自此處起直至其後之脈衝光之發光點為止的時間差Tof，可透過某些硬體之測量機構進行測量，故其亦為已知。Then, in the scanning exposure of the single exposure irradiation, the time Tse from the start of the start of the wafer stage 49 to the start of the exposure is known at the time of generating the track of the wafer stage 49. Further, when the drive control timing before the start of the start is the time origin 0, the time difference Tof from the start to the subsequent light-emitting point of the pulse light can be measured by some hardware measuring mechanism, so Is known.
該實施形態中，為獲得時間差Tof，而於曝光開始前使電漿65發光，並對脈衝光之發光時序與晶圓載物台49之驅動控制時序之延遲時間進行檢測。該時間差Tof藉由通過EUV光檢測器19監視脈衝光而出現。該實施形態中，於EUV光檢測器19中使用有發光二極體。當產生脈衝光時，電流(電壓)將會自發光二極體中輸出，以監視該信號，藉此可獲得脈衝光之發光時序。透過分析來自該發光二極體之信號與曝光裝置內部所具有之晶圓載物台49的驅動控制時序之控制週期的時間差，可獲得Tof。In this embodiment, in order to obtain the time difference Tof, the plasma 65 is caused to emit light before the start of exposure, and the timing of the emission of the pulsed light and the delay time of the drive control timing of the wafer stage 49 are detected. This time difference Tof occurs by monitoring the pulsed light by the EUV photodetector 19. In this embodiment, a light-emitting diode is used in the EUV photodetector 19. When pulsed light is generated, a current (voltage) is output from the light-emitting diode to monitor the signal, whereby the light-emitting timing of the pulsed light can be obtained. Tof can be obtained by analyzing the time difference between the signal from the light-emitting diode and the control period of the drive control timing of the wafer stage 49 inside the exposure apparatus.
於此，使n為整數，則脈衝光之發光時序Tf(n)如下式所示。Here, when n is an integer, the light emission timing Tf(n) of the pulse light is as follows.
Tf(n)＝n×De＋TofTf(n)=n×De+Tof
又，使m為整數，則曝光開始之驅動控制時序Ts(m)如下式所示。Further, when m is an integer, the drive control timing Ts(m) at which the exposure is started is as follows.
Ts(m)＝m×Ds＋TseTs(m)=m×Ds+Tse
如圖2之直線a所示，若於最初之時間原點0處開始晶圓載物台49之啟動，則脈衝光之發光時序未必與晶圓載物台49到達曝光開始點之時序一致。為使其一致，則如圖2之直線b所示般，可使晶圓載物台49之啟動開始延遲(由於驅動控制為離散性，因而延遲為以一個試樣Ds為單位)。As shown by a straight line a in Fig. 2, if the start of the wafer stage 49 is started at the origin 0 at the first time, the timing of the emission of the pulse light does not necessarily coincide with the timing at which the wafer stage 49 reaches the exposure start point. In order to make them coincide, as shown by a straight line b in Fig. 2, the start of the start of the wafer stage 49 can be delayed (since the drive control is discrete, the delay is in units of one sample Ds).
於此，研究|Tf(n)－Ts(m)|<△(△為所容許之時間差)成立之最小n、m。使用該m，即，自先前之時間原點0僅使晶圓載物台49之啟動開始的驅動控制時序延遲m試樣，藉此以脈衝光之發光開始點靠近曝光開始點附近之方式進行控制(獲取同步)。Here, the minimum n and m at which |Tf(n)-Ts(m)|<Δ(Δ is the allowable time difference) is established. The m is used, that is, the drive control timing at which the start of the wafer stage 49 is started is delayed by m samples from the previous time origin 0, whereby the light emission start point of the pulse light is controlled near the exposure start point. (Get sync).
再者，週期De與週期Ds之值因時序之初始值而使n與m值過大，故而有可能使達到可進行曝光開始之狀態為止的時間延長。當其成為問題之情形時，亦可預先使發光之時序或者晶圓載物台49之驅動控制的時序即相位偏移，而以n、m值為較小之值獲得同步。至於使相位偏移之方法，例如，可使用改變軌道之開始位置(初始位置)，或者調整軌道生成之參數(加速度)等方法。Further, since the values of the period De and the period Ds are excessively large due to the initial value of the timing, the time until the state in which the exposure can be started may be prolonged. When it is a problem, the timing of the light emission or the timing of the drive control of the wafer stage 49, that is, the phase shift, may be previously obtained, and the synchronization may be obtained with a value of n and m being small. As for the method of shifting the phase, for example, a method of changing the start position (initial position) of the track or adjusting the parameter (acceleration) of the track generation may be used.
上述曝光裝置中，於開始對晶圓59上進行曝光前，以依據晶圓載物台49之驅動控制時序與脈衝光之發光時序，而使曝光開始點與發光時序一致(同步)之方式，控制晶圓載物台49之移動開始時序，因此即使於曝光用光源中使用使靶材料電漿化而產生之脈衝光之情形時，亦可獲得良好之曝光量均一性。於此，所謂一致(同步)是指可容許裝置並無規格上問題之程度的時間差者。In the exposure apparatus described above, before the exposure to the wafer 59 is started, the exposure start point and the light emission timing are matched (synchronized) in accordance with the driving control timing of the wafer stage 49 and the light emission timing of the pulse light. Since the movement of the wafer stage 49 starts the timing, even when the pulse light generated by the plasma of the target material is used in the exposure light source, good exposure uniformity can be obtained. Here, the term "synchronization" refers to a time difference that allows the device to have no problem with the specification.
即，本質上可降低晶圓載物台49之曝光開始時刻與脈衝光之發光時刻的偏差，使曝光區域內掃描開始部分中所照射之脈衝光的曝光區域內之脈衝數一直為固定之脈衝數，故使曝光區域內之曝光量為均一。That is, the deviation between the exposure start timing of the wafer stage 49 and the light emission timing of the pulse light can be substantially reduced, so that the number of pulses in the exposure region of the pulsed light irradiated in the scanning start portion in the exposure region is always a fixed pulse. Therefore, the exposure amount in the exposure area is made uniform.
再者，上述曝光裝置中使用EUV光檢測器19檢測EUV光之發光時序，然而亦可使用其他方法檢測發光時序。例如，如上所述，可以下述方式預先進行調整，使靶63之供應時序，與由雷射裝置29所射出之電漿激勵用的脈衝雷射光之脈衝時序，取得同步。於該情形時，可將雷射裝置29之雷射光發光時序作為EUV光之發光時序進行控制。於進行如此之控制時，若雷射裝置29之雷射光發光週期與靶63之供應週期不同，則較好的是針對該不同之處進行分析。Further, in the above-described exposure apparatus, the EUV photodetector 19 is used to detect the light emission timing of the EUV light, but other methods may be used to detect the light emission timing. For example, as described above, the adjustment can be made in advance so that the timing of supply of the target 63 is synchronized with the pulse timing of the pulsed laser light for excitation by the laser device 29. In this case, the laser light emission timing of the laser device 29 can be controlled as the light emission timing of the EUV light. When such control is performed, if the laser light emission period of the laser device 29 is different from the supply period of the target 63, it is preferable to analyze the difference.
圖3表示有本發明之曝光裝置第2實施形態的時序圖。Fig. 3 is a timing chart showing a second embodiment of the exposure apparatus of the present invention.
再者，於該實施形態中對與第1實施形態相同之部分付與相同符號，並省略詳細說明。In the embodiment, the same portions as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof will be omitted.
於該實施形態中，於開始對晶圓59上進行曝光前，將依據晶圓載物台49之驅動控制時序與脈衝光之發光時序而調整發光時序，以使曝光開始與發光時序一致。In this embodiment, the light emission timing is adjusted in accordance with the driving control timing of the wafer stage 49 and the light emission timing of the pulse light before the start of exposure on the wafer 59, so that the exposure start coincides with the light emission timing.
於該實施形態中，發光時序之調整可藉由使脈衝光相位變化而進行。即，控制裝置61，於圖3之時刻A上，對晶圓載物台49之驅動控制時序與脈衝光之發光時序的偏差量Tof進行檢測(與第1實施形態相同)。繼而，依據該結果，計算出使脈衝光之發光時序偏移何種程度，則可在最短時間內使之與晶圓載物台49之驅動控制時序一致。繼而，將該計算結果反饋至雷射．靶材料控制裝置43中。藉此，變更透過靶材料供應裝置21之供應部25而自噴嘴23所噴出之靶63之噴出時序，故將脈衝光之發光時序(相位)偏移(圖中調整有時刻A之發光與下次之發光為止之時序)。再者，於該實施形態中，脈衝光之發光頻率(重複頻率)並不產生變化。In this embodiment, the adjustment of the light emission timing can be performed by changing the phase of the pulse light. In other words, the control device 61 detects the deviation amount Tof between the drive control timing of the wafer stage 49 and the light emission timing of the pulse light at time A in FIG. 3 (the same as in the first embodiment). Then, based on the result, it is calculated how much the timing of the emission of the pulse light is shifted, and the timing of the drive control of the wafer stage 49 can be matched in the shortest time. Then, the calculation result is fed back to the laser. In the target material control device 43. Thereby, the discharge timing of the target 63 discharged from the nozzle 23 through the supply unit 25 of the target material supply device 21 is changed, so that the light emission timing (phase) of the pulse light is shifted (the light emission at the time A is adjusted in the figure) The timing of the second light.) Further, in this embodiment, the light emission frequency (repetition frequency) of the pulse light does not change.
於該實施形態中，亦可獲得與第1實施形態相同之效果，該實施形態與第1實施形態相比，可以更短時間使晶圓載物台49之驅動控制時序與脈衝光之發光時序一致。因此，可減少等待時間，提高曝光裝置效率。Also in this embodiment, the same effects as those of the first embodiment can be obtained. In this embodiment, the drive control timing of the wafer stage 49 can be made to coincide with the light emission timing of the pulse light in a shorter time than in the first embodiment. . Therefore, the waiting time can be reduced and the efficiency of the exposure device can be improved.
再者，該實施形態中，就偏移有脈衝光之發光時序(相位)之例加以說明，然而亦可設為改變脈衝光之發光頻率(重複頻率)。Further, in this embodiment, an example in which the light emission timing (phase) of the pulse light is shifted is described. However, the light emission frequency (repetition frequency) of the pulse light may be changed.
即，當照射到晶圓59上1點之脈衝光之脈衝數較為充分，且曝光量均一性亦較為充分時，則即使略微改變脈衝光之發光頻率亦並無問題。因此，於如此之情形時，亦可以使晶圓載物台49之驅動控制時序與脈衝光之發光時序一致之方式改變脈衝光之發光頻率。又，亦可以改變載物台之驅動控制時序的相位或頻率。That is, when the number of pulses of the pulsed light irradiated to one point on the wafer 59 is sufficient and the uniformity of the exposure amount is sufficient, there is no problem even if the light emission frequency of the pulse light is slightly changed. Therefore, in such a case, the light emission frequency of the pulse light can be changed in such a manner that the drive control timing of the wafer stage 49 coincides with the light emission timing of the pulse light. Also, the phase or frequency of the drive control timing of the stage can be changed.
圖4表示本發明之曝光裝置之第3實施形態。Fig. 4 shows a third embodiment of the exposure apparatus of the present invention.
再者，於該實施形態中，對於與第1實施形態相同之部分，將付與相同符號並省略詳細說明。In the embodiment, the same portions as those in the first embodiment will be denoted by the same reference numerals and will not be described in detail.
該實施形態中，藉由監視由噴嘴23噴出靶材料之時序，而可監視脈衝光之發光時序。In this embodiment, the timing of the emission of the pulsed light can be monitored by monitoring the timing at which the target material is ejected from the nozzle 23.
即，於該實施形態中，於靶63之通過位置之單側配置有光照射器71，與光照射器71對向則配置有光檢測器73。光照射器71具有發光二極體75與聚光透鏡77。由發光二極體75所放出之光設計為藉由聚光透鏡77而於靶63所通過之位置處聚為焦點。於靶63所通過之時刻處，來自發光二極體75的光藉由靶63而遮斷或散射，因此由光檢測器73所檢測之光量將降低，則來自光檢測器73之輸出信號會降低。That is, in this embodiment, the light irradiator 71 is disposed on one side of the passing position of the target 63, and the photodetector 73 is disposed to face the light irradiator 71. The light irradiator 71 has a light emitting diode 75 and a collecting lens 77. The light emitted by the light-emitting diode 75 is designed to be focused by the condensing lens 77 at a position where the target 63 passes. At the time when the target 63 passes, the light from the light-emitting diode 75 is blocked or scattered by the target 63, so that the amount of light detected by the photodetector 73 is lowered, and the output signal from the photodetector 73 is reduce.
因此，可藉由監視光檢測器73之輸出信號，而監視靶63所通過之時刻。繼而，自靶63通過起直至靶63發光為止之時間為固定的，因而可根據光檢測器73之檢測信號而推算出脈衝光之發光時序。Therefore, the timing at which the target 63 passes can be monitored by monitoring the output signal of the photodetector 73. Then, since the time from the passage of the target 63 until the target 63 emits light is fixed, the light emission timing of the pulse light can be estimated from the detection signal of the photodetector 73.
於該實施形態中，亦可獲得與第1實施形態相同之效果。Also in this embodiment, the same effects as those of the first embodiment can be obtained.
再者，於該實施形態中，就藉由光檢測器73而監視靶63所通過之時刻之例加以說明，然而亦可透過自雷射．靶材料控制裝置43求得輸出至靶材料供應裝置21之供應部25的材料供應信號，與靶材料之滴落時序相關性，而根據針對靶材料供應裝置21之材料供應信號推算出脈衝光之發光時序。Further, in this embodiment, an example in which the time at which the target 63 passes is monitored by the photodetector 73 will be described, but it may also be transmitted from the laser. The target material control device 43 determines the material supply signal outputted to the supply portion 25 of the target material supply device 21, and the drip timing correlation with the target material, and derives the pulse light according to the material supply signal for the target material supply device 21. Illumination timing.
例如，當將脈衝電壓施加至靶材料供應裝置21之供應部25時，則相應於此，液滴將以特定應答時間自噴嘴23滴落。因此，可藉由預先測定施加脈衝電壓之時刻與脈衝光發光為止之時間差，而僅獲得脈衝電壓之施加時序，由此獲得脈衝光之發光時刻。For example, when a pulse voltage is applied to the supply portion 25 of the target material supply device 21, correspondingly, the liquid droplets will drip from the nozzle 23 with a specific response time. Therefore, by simply measuring the time difference between the timing at which the pulse voltage is applied and the light emission of the pulse light, only the application timing of the pulse voltage can be obtained, thereby obtaining the light-emitting timing of the pulse light.
以上，透過上述實施形態說明本發明，然而本發明之技術性範圍並非限定於上述實施形態，例如，亦可為以下形態。The present invention has been described above with reference to the above embodiments. However, the technical scope of the present invention is not limited to the above-described embodiments, and may be, for example, the following aspects.
(1)上述實施形態中，就使曝光開始點與脈衝光發光點同步之例加以有說明，然而亦可設為使曝光結束點與脈衝光發光點同步。何種條件較為重要可藉由曝光之曝光照射形狀等而決定，當無法同時使兩者同步時，較好的是控制為僅使較為重要者同步。例如，藉由對曝光照射邊緣附近有無圖案或照明均一性要求較高之圖案的有無等，而決定何者優先則即可。(1) In the above embodiment, an example is described in which the exposure start point is synchronized with the pulse light emitting point. However, the exposure end point may be synchronized with the pulse light emitting point. What kind of conditions are important can be determined by the exposure exposure shape of the exposure, etc., and when it is not possible to synchronize the two at the same time, it is preferable to control to synchronize only the more important ones. For example, it is sufficient to determine whether or not the pattern is preferred by the presence or absence of a pattern having a high pattern uniformity or illumination uniformity in the vicinity of the exposure edge.
(2)於上述實施形態中，就藉由EUV光檢測器19而監視脈衝光之發光時序之例加以有說明，然而亦可藉由例如對可視光、紅外線區具有敏感性之光檢測器而進行監視。即，自電漿65將與EUV光67同時產生紫外線、可視光及紅外線等，因此可藉由對其進行監視而獲得EUV光67之發光時序。(2) In the above embodiment, an example in which the light emission timing of the pulse light is monitored by the EUV photodetector 19 has been described. However, for example, a photodetector having sensitivity to visible light or infrared rays may be used. Monitor. That is, since the ultraviolet light, the visible light, the infrared rays, and the like are generated simultaneously with the EUV light 67 from the plasma 65, the light emission timing of the EUV light 67 can be obtained by monitoring it.
(3)於上述實施形態中，就於EUV光67之光源中使用雷射生成電漿光源之例加以有說明，然而亦可使用例如間歇性將靶材料供應至電極間，據此進行放電而產生EUV光之放電電漿X線源。又，至於間歇性之靶材料供應方法，存在有間歇性將氣體噴出至電極間，或者將液體狀或微粒子狀之靶材料供應至電極間的方法。(3) In the above embodiment, an example in which a laser is used to generate a plasma light source from a light source of the EUV light 67 is described. However, for example, the target material may be intermittently supplied between the electrodes, and discharge may be performed accordingly. A discharge plasma X-ray source that produces EUV light. Further, as for the intermittent target material supply method, there is a method in which a gas is intermittently ejected between electrodes, or a liquid or microparticle-shaped target material is supplied between electrodes.
(4)於上述實施形態中，就於靶材料中使用液化氙之例加以有說明，然而亦可使用例如錫(Sn)。於該情形時，較好的是對例如聚苯乙烯樹脂中分散有Sn固體微粒子者進行加熱，並以液體狀形態而使用。(4) In the above embodiment, an example in which liquefied ruthenium is used for the target material has been described. However, for example, tin (Sn) may be used. In this case, it is preferred to heat, for example, those in which the Sn solid particles are dispersed in the polystyrene resin, and to use them in a liquid form.
(5)於上述實施形態中，獲得有感應基板之載物台控制時序與發光時序之同步，亦可以相同方式，獲得標線片載物台之控制時序與發光時序之同步。(5) In the above embodiment, the stage control timing of the sensing substrate and the light emission timing are synchronized, and the control timing and the light emission timing of the reticle stage can be synchronized in the same manner.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
11．．．EUV光產生部11. . . EUV light generation unit
13．．．曝光部13. . . Exposure department
15、45．．．真空室15, 45. . . Vacuum chamber
17．．．聚光鏡17. . . Condenser
19．．．EUV光檢測器19. . . EUV light detector
21．．．靶材料供應裝置twenty one. . . Target material supply device
23．．．噴嘴twenty three. . . nozzle
25．．．供應部25. . . Supply Department
27．．．回收機構27. . . Recycling agency
29．．．雷射裝置29. . . Laser device
31．．．雷射光31. . . laser
33．．．雷射光光學系統33. . . Laser optical system
35、37．．．反射鏡35, 37. . . Reflector
39．．．透鏡39. . . lens
41．．．雷射導入窗41. . . Laser import window
43．．．雷射．靶材料控制裝置43. . . Laser. Target material control device
47．．．標線片載物台47. . . Marker stage
49．．．晶圓載物台49. . . Wafer stage
51．．．EUV光導入部51. . . EUV light introduction unit
53．．．照明光學系統53. . . Lighting optical system
55．．．標線片55. . . Marker
57．．．投影光學系統57. . . Projection optical system
59．．．晶圓59. . . Wafer
61．．．控制裝置61. . . Control device
63．．．靶63. . . target
65．．．電漿65. . . Plasma
67．．．EUV光67. . . EUV light
71．．．光照射器71. . . Light illuminator
73．．．光檢測器73. . . Photodetector
75．．．發光二極體75. . . Light-emitting diode
77．．．聚光透鏡77. . . Condenser lens
a、b．．．直線a, b. . . straight line
A．．．時刻A. . . time
De．．．發光週期De. . . Luminous cycle
Ds．．．驅動控制週期Ds. . . Drive control cycle
Tof．．．時間差Tof. . . Time difference
Tse．．．自晶圓載物台49之啟動開始起直至曝光開始為止之時間Tse. . . The time from the start of the wafer stage 49 to the start of exposure
圖1是表示本發明之曝光裝置的第1實施形態的說明圖。Fig. 1 is an explanatory view showing a first embodiment of an exposure apparatus according to the present invention.
圖2是表示圖1之控制裝置中控制晶圓載物台之時序圖的說明圖。Fig. 2 is an explanatory view showing a timing chart for controlling a wafer stage in the control device of Fig. 1;
圖3是表示本發明之曝光裝置的第2實施形態中，控制晶圓載物台的時序圖之說明圖。3 is an explanatory view showing a timing chart for controlling a wafer stage in the second embodiment of the exposure apparatus of the present invention.
圖4是表示本發明之曝光裝置的第3實施形態的說明圖。Fig. 4 is an explanatory view showing a third embodiment of the exposure apparatus of the present invention.
11．．．EUV光產生部11. . . EUV light generation unit
13．．．曝光部13. . . Exposure department
15、45．．．真空室15, 45. . . Vacuum chamber
17．．．聚光鏡17. . . Condenser
19．．．EUV光檢測器19. . . EUV light detector
21．．．靶材料供應裝置twenty one. . . Target material supply device
23．．．噴嘴twenty three. . . nozzle
25．．．供應部25. . . Supply Department
27．．．回收機構27. . . Recycling agency
29．．．雷射裝置29. . . Laser device
31．．．雷射光31. . . laser
33．．．雷射光光學系統33. . . Laser optical system
35、37．．．反射鏡35, 37. . . Reflector
39．．．透鏡39. . . lens
41．．．雷射導入窗41. . . Laser import window
43．．．雷射．靶材料控制裝置43. . . Laser. Target material control device
47．．．標線片載物台47. . . Marker stage
49．．．晶圓載物台49. . . Wafer stage
51．．．EUV光導入部51. . . EUV light introduction unit
53．．．照明光學系統53. . . Lighting optical system
55．．．標線片55. . . Marker
57．．．投影光學系統57. . . Projection optical system
59．．．晶圓59. . . Wafer
61．．．控制裝置61. . . Control device
63．．．靶63. . . target
65．．．電漿65. . . Plasma
67．．．EUV光67. . . EUV light
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| CN101893826B (en) * | 2010-06-25 | 2012-01-04 | 袁波 | Photosensitive circuit board making method and circuit board making machine |
| JP2012129345A (en) * | 2010-12-15 | 2012-07-05 | Renesas Electronics Corp | Method of manufacturing semiconductor device, exposure method and exposure device |
| JP2012145869A (en) * | 2011-01-14 | 2012-08-02 | Hitachi High-Technologies Corp | Exposure method and device thereof |
| JP2012199512A (en) * | 2011-03-10 | 2012-10-18 | Gigaphoton Inc | Extreme ultraviolet light generation apparatus and extreme ultraviolet light generation method |
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| JP6661669B2 (en) * | 2016-01-28 | 2020-03-11 | ギガフォトン株式会社 | Extreme ultraviolet light generator |
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| WO2019190822A1 (en) | 2018-03-28 | 2019-10-03 | Vtv Therapeutics Llc | Crystalline forms of [3-(4- {2-butyl-1-[4-(4-chloro-phenoxy)-phenyl]-1h-imidazol-4-yl} -phenoxy)-propyl]-diethyl-amine |
| WO2019190823A1 (en) | 2018-03-28 | 2019-10-03 | Vtv Therapeutics Llc | Pharmaceutically acceptable salts of [3-(4- {2-butyl-1-[4-(4-chlorophenoxy)-phenyl]-1h-imidazol-4-yl} -phenoxy)-propyl]-diethyl-amine |
| WO2020076668A1 (en) | 2018-10-10 | 2020-04-16 | Vtv Therapeutics Llc | Metabolites of [3-(4-{2-butyl-l-[4-(4-chloro-phenoxy)-phenyl]-lh-imidazol-4-yl } -phen ox y)-prop yl] -diethyl-amine |
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