TWI449284B - Light amplification device - Google Patents
Light amplification device Download PDFInfo
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- TWI449284B TWI449284B TW100122482A TW100122482A TWI449284B TW I449284 B TWI449284 B TW I449284B TW 100122482 A TW100122482 A TW 100122482A TW 100122482 A TW100122482 A TW 100122482A TW I449284 B TWI449284 B TW I449284B
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Description
本發明係與光波放大裝置有關，特別是指一種利用電漿韋博不穩定(Plasma Weibel instability)之光波放大裝置。The present invention relates to a light wave amplifying device, and more particularly to a light wave amplifying device using plasma Weibel instability.
光線具有速度快且沿直線傳播的特性，因此在科學技術領域裡，利用光線作為傳輸媒介一直是很重要的方式。以光纖通訊為例，主要係以一發射器產生出光源訊號，然後使光源訊號自玻璃材質之光纖一端投射，光線經過光纖內部傳遞至另一端以後，再利用一接收器接收光源訊號轉換為需要的電氣訊號。Light has the characteristics of fast speed and linear propagation, so in the field of science and technology, the use of light as a transmission medium has always been an important way. Taking fiber-optic communication as an example, a light source signal is generated by a transmitter, and then the light source signal is projected from one end of the glass fiber. After the light is transmitted through the fiber to the other end, the receiver receives the light source signal and converts it into a need. Electrical signal.
隨著訊號傳輸的品質需求增加，傳輸速度提升，而且傳送距離越來越遠，因此在光纖的傳遞路徑裡，每間隔固定距離就會增設一中繼器，或是利用光放大器放大光訊號，以利於達成上述各種使用目的。As the quality of signal transmission increases, the transmission speed increases, and the transmission distance is further and farther. Therefore, in the transmission path of the optical fiber, a repeater is added every fixed distance, or an optical amplifier is used to amplify the optical signal. In order to facilitate the above various purposes of use.
目前最常見的光放大器係為摻鉺光纖放大器(Erbium-Doped Fiber Amplifier,EDFA)，其係於光纖內部摻入了少量的稀土元素鉺(Er)離子，利用光訊號所具有之光子通過摻鉺光纖，光子與鉺離子相互作用發生受激輻射效應，產生大量與自身完全相同的光子，使得通過摻鉺光纖傳輸的信號光子迅速增多，進而產生信號放大作用。At present, the most common optical amplifier is an Erbium-Doped Fiber Amplifier (EDFA), which is doped with a small amount of rare earth element erbium (Er) ions inside the fiber, and is photo-doped by photons. In the fiber, the photon interacts with the helium ion to generate a stimulated radiation effect, which produces a large number of photons that are identical to themselves, so that the signal photons transmitted through the erbium-doped fiber are rapidly increased, thereby generating signal amplification.
然而，上述摻鉺光纖放大器的價格非常昂貴，而且由於本身的離子特性，使其受限於能階間的量子躍遷物理，僅能提供980nm與1490nm區段作為放大，無法適合在更為寬頻與廣域的工作頻譜。同時，上述光放大器只能使用在放大傳遞於光纖內的光訊號，無法在開放空間中放大光訊號，使得現有光波放大機制仍然有很大的應用侷限。However, the above-mentioned erbium-doped fiber amplifier is very expensive, and due to its own ionic characteristics, it is limited by the quantum transition physics of the energy level, and only provides the 980 nm and 1490 nm sections as amplification, which cannot be adapted to a wider frequency. Wide-area working spectrum. At the same time, the optical amplifier can only use the optical signal transmitted in the optical fiber to amplify, and can not amplify the optical signal in the open space, so that the existing optical wave amplification mechanism still has great application limitations.
因此，本發明之主要目的在於提供一種光波放大裝置，其可在開放空間內放大光波，不受限於原子能階，而且能夠適用較為廣泛波長與振幅之光波。Accordingly, it is a primary object of the present invention to provide an optical amplifying apparatus which can amplify light waves in an open space without being limited to atomic energy levels, and can apply light waves of a wide range of wavelengths and amplitudes.
為達成上述目的，本發明所提供之光波放大裝置，包含有一控制件與一激化光源，該控制件具有多數導體，各該導體沿著一軸向延伸，該等導體係相互鄰近且間隔地平行並列；該激化光源係投射出光線至該控制件之各該導體，各該導體之寬度尺寸不大於該光線之波長一半，且該光線的投射方向與各該軸向相互垂直。藉由上述技術特徵，控制件可產生出電子流，進而形成電漿韋博不穩定中的類電漿，用以放大任何振幅與頻率之光波。In order to achieve the above object, a light wave amplifying device provided by the present invention comprises a control member and an activating light source, the control member having a plurality of conductors, each of the conductors extending along an axial direction, the guiding systems being adjacent to each other and spaced apart from each other The intensifying light source projects light to each of the conductors of the control member, and the width of each of the conductors is not more than half of the wavelength of the light, and the direction of projection of the light is perpendicular to each of the axial directions. With the above technical features, the control member can generate a flow of electrons, thereby forming a plasma-like plasma in the unstable Weibo, for amplifying light waves of any amplitude and frequency.
有關本發明所提供的詳細構造、特點、組裝或使用方式，將於後續的實施方式詳細說明中予以描述。然而，在本發明領域中具有通常知識者應能瞭解，該等詳細說明以及實施本發明所列舉的特定實施例，僅係用於說明本發明，並非用以限制本發明之專利申請範圍。The detailed construction, features, assembly or use of the present invention will be described in the detailed description of the embodiments. However, it should be understood by those of ordinary skill in the art that the present invention is not limited by the scope of the invention.
茲配合圖式舉一較佳實施例對本發明之組成構件與技術特點進行詳細說明，其中所用圖式先簡要說明如下：第一圖係為本發明一較佳實施例中控制件之立體圖。BRIEF DESCRIPTION OF THE DRAWINGS The components and technical features of the present invention are described in detail with reference to the preferred embodiments of the present invention. The drawings are briefly described as follows: The first figure is a perspective view of a control member in accordance with a preferred embodiment of the present invention.
第二圖係為本發明一較佳實施例之實施架構圖。The second figure is an implementation diagram of a preferred embodiment of the present invention.
第三圖係為本發明一較佳實施例之物理應用機制圖。The third figure is a physical application mechanism diagram of a preferred embodiment of the present invention.
第四圖係為本發明一較佳實施例之示意圖，主要顯示反射光之反射狀態。The fourth figure is a schematic view of a preferred embodiment of the present invention, mainly showing the reflected state of the reflected light.
請參閱第一圖所示，係為本發明一較佳實施例所提供之光波放大裝置，包含一控制件10與一激化光源20。Referring to the first embodiment, a light wave amplifying device according to a preferred embodiment of the present invention includes a control member 10 and an excitation light source 20.
控制件10包括一矽基板12，以及多數成形於矽基板12表面之長條狀導體14。各導體14係為奈米級金屬導線，且皆沿著矽基板12表面朝一軸向16延伸，使該等導體14相互鄰近且間隔地平行並列於矽基板12。在本實施例之各導體14的寬度尺寸與高度尺寸皆為100nm，長度尺寸為600μm，各導體14之間的距離為795nm。The control member 10 includes a crucible substrate 12 and a plurality of elongated conductors 14 formed on the surface of the crucible substrate 12. Each of the conductors 14 is a nano-scale metal wire and extends along the surface of the ruthenium substrate 12 toward an axial direction 16 such that the conductors 14 are adjacent to each other and spaced parallel to each other in parallel with the ruthenium substrate 12. Each of the conductors 14 of this embodiment has a width dimension and a height dimension of 100 nm, a length dimension of 600 μm, and a distance between the conductors 14 of 795 nm.
如第二圖所示，該激化光源20係由一雷射光22經分光而成，本實施例之雷射光22為發光波長632.8nm紅光波段氦氖雷射(He-Ne Laser)，雷射光22經過改變投射路徑，而且與1/2波片23、線偏振片24調整為S波(S-wave)之後，再利用分光鏡25使雷射光22分為二道光線，其中一道形成入射光30，另一道即形成激化光源20。As shown in the second figure, the excitation light source 20 is formed by splitting a laser beam 22, and the laser light 22 of the present embodiment is a red light band (He-Ne Laser) having an emission wavelength of 632.8 nm. After the projection path is changed, and the 1/2 wave plate 23 and the linear polarization plate 24 are adjusted to S wave (S-wave), the laser beam 22 is split into two rays by the beam splitter 25, and one of them forms incident light. 30. The other way is to form the excitation light source 20.
激化光源20之光線係透過一斷路器26(Chopper)，再投射至控制件10之各導體14，激化光源20的投射路徑方向與各導體14之軸向16相互垂直。利用斷路器26可以控制激化光源20為特定頻率，且各導體14之寬度尺寸不大於激化光源20與入射光30波長之一半。The light of the intensifying light source 20 is transmitted through a circuit breaker 26 (Chopper) and then projected to the conductors 14 of the control member 10, and the direction of the projection path of the excitation light source 20 is perpendicular to the axial direction 16 of each conductor 14. The excitation source 20 can be controlled to a specific frequency by the circuit breaker 26, and the width dimension of each conductor 14 is not greater than one half of the wavelength of the excitation source 20 and the incident light 30.
入射光30係直接投射於控制件10之各導體14，再由控制件10反射至一接收器32。一鎖相放大器34(Lock-In Amplifier)可同時擷取接收器32與斷路器26的頻率訊號，用以測量出入射光30經控制件10反射後的變化狀態。The incident light 30 is directly projected onto the conductors 14 of the control member 10 and then reflected by the control member 10 to a receiver 32. A lock-in amplifier 34 (Lock-In Amplifier) can simultaneously capture the frequency signals of the receiver 32 and the circuit breaker 26 to measure the change state of the incident light 30 after being reflected by the control member 10.
經由上述技術組成構件，並且配合第三圖所示之電漿韋博不穩定物理機制，激化光源20投射至控制件10之各導體14時，激化光源20之光子將對於具有能隙之各導體14激發出自由電子，使自由電子由高能階向低能階躍遷，形成控制件10具有垂直於激化光源20之相對電子流(第三圖中標示J)。若入射光30投射至形成於控制件10之電子流，由於電子流的寬度不大於入射光30之波長一半，使得入射光30恰恰位於可被放大的相位處(第三圖中標示A、B位置)，而且利用電子流產生並增強入射光30，符合電漿韋博不穩定且可控制的「類電漿」機制。如第四圖所示，入射光30經過控制件10產生磁場與電場互相作用後之反射光40，就能因磁場微擾而產生漸趨增強的現象，使入射光30之振幅隨著時間呈指數增長。By constructing the components via the above techniques, and in conjunction with the plasma Weibo unstable physical mechanism shown in the third figure, when the excitation light source 20 is projected onto the respective conductors 14 of the control member 10, the photons of the excitation source 20 will be for the conductors having the energy gap. 14 excites free electrons, causing the free electrons to transition from a high energy level to a low energy level, and the control member 10 has a relative electron flow perpendicular to the excitation source 20 (marked J in the third figure). If the incident light 30 is projected onto the electron flow formed in the control member 10, since the width of the electron flow is not more than half the wavelength of the incident light 30, the incident light 30 is located exactly at the phase that can be amplified (the third figure indicates A, B). Position), and the use of electron flow to generate and enhance incident light 30, in line with the unstable and controllable "plasma-like" mechanism of plasma Weber. As shown in the fourth figure, the reflected light 40 after the incident light 30 is generated by the control member 10 to interact with the electric field and the electric field can be gradually enhanced by the magnetic field perturbation, so that the amplitude of the incident light 30 is reflected with time. index increase.
本發明分別以多種振幅之入射光30進行實驗，並透過鎖相放大器34擷取反射光40與斷路器26所提供的參考訊號，配合示波器38顯示出其振幅變化狀態，再於下表記錄各入射光30在激化光源20投射於控制件10之前與之後所產生的變化。由表中所顯示的數據可知，利用激化光源20在控制件10產生出電子流以後，入射光30確實能夠由控制件10反射而產生振幅變化，振幅變化量代表著光強度的變化值。The present invention performs experiments with incident light 30 of various amplitudes, and extracts the reference signal provided by the reflected light 40 and the circuit breaker 26 through the lock-in amplifier 34, and displays the amplitude change state with the oscilloscope 38, and records each in the following table. The incident light 30 changes before and after the excitation source 20 is projected onto the control member 10. As can be seen from the data shown in the table, after the excitation light source 20 generates a flow of electrons in the control member 10, the incident light 30 can be reflected by the control member 10 to cause an amplitude change, and the amplitude change amount represents a change value of the light intensity.
利用本發明之入射光30係先於空氣中傳遞至控制件10表面，然後利用激化光源20於控制件10形成電子流的電漿韋博不穩定中的類電漿，使入射光30振幅隨時間呈指數增長而放大為反射光40。藉此，入射光30就能在開放空間內放大，不受限各種傳遞途徑，而且只需調整控制件的結構，各種波長與振幅之光波皆能適用本發明。The incident light 30 of the present invention is transmitted to the surface of the control member 10 prior to the air, and then the plasma of the Weibo instability in the electron flow is formed by the excitation source 20 on the control member 10, so that the amplitude of the incident light 30 is varied. The time increases exponentially and is amplified into reflected light 40. Thereby, the incident light 30 can be enlarged in the open space, and various transmission paths are not limited, and only the structure of the control member can be adjusted, and light waves of various wavelengths and amplitudes can be applied to the present invention.
最後，必須再次說明，本發明於前揭實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。Finally, it is to be noted that the constituent elements disclosed in the foregoing embodiments are merely illustrative and are not intended to limit the scope of the present invention, and alternative or variations of other equivalent elements should also be the scope of the patent application of the present application. Covered.
10．．．控制件10. . . Control
12．．．矽基板12. . .矽 substrate
14．．．導體14. . . conductor
16．．．軸向16. . . Axial
20．．．激化光源20. . . Intensify light source
22．．．雷射光twenty two. . . laser
23．．．1/2波片twenty three. . . 1/2 wave plate
24．．．線偏振片twenty four. . . Linear polarizer
25．．．分光鏡25. . . Beam splitter
26．．．斷路器26. . . breaker
30．．．入射光30. . . Incident light
32．．．接收器32. . . receiver
34．．．鎖相放大器34. . . Lock-in amplifier
38．．．示波器38. . . Oscilloscope
40．．．反射光40. . . reflected light
第一圖係為本發明一較佳實施例中控制件之立體圖。The first figure is a perspective view of a control member in accordance with a preferred embodiment of the present invention.
第二圖係為本發明一較佳實施例之實施架構圖。The second figure is an implementation diagram of a preferred embodiment of the present invention.
第三圖係為本發明一較佳實施例之物理應用機制圖。The third figure is a physical application mechanism diagram of a preferred embodiment of the present invention.
第四圖係為本發明一較佳實施例之示意圖，主要顯示反射光之反射狀態。The fourth figure is a schematic view of a preferred embodiment of the present invention, mainly showing the reflected state of the reflected light.
10．．．控制件10. . . Control
12．．．矽基板12. . .矽 substrate
14．．．導體14. . . conductor
20．．．激化光源20. . . Intensify light source
22．．．雷射光twenty two. . . laser
23．．．1/2波片twenty three. . . 1/2 wave plate
24．．．線偏振片twenty four. . . Linear polarizer
25．．．分光鏡25. . . Beam splitter
26．．．斷路器26. . . breaker
30．．．入射光30. . . Incident light
32．．．接收器32. . . receiver
34．．．鎖相放大器34. . . Lock-in amplifier
38．．．示波器38. . . Oscilloscope
40．．．反射光40. . . reflected light
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100122482A TWI449284B (en) | 2011-06-27 | 2011-06-27 | Light amplification device |
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| TW100122482A TWI449284B (en) | 2011-06-27 | 2011-06-27 | Light amplification device |
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| TW201301696A TW201301696A (en) | 2013-01-01 |
| TWI449284B true TWI449284B (en) | 2014-08-11 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192861A (en) * | 1990-04-01 | 1993-03-09 | Yeda Research & Development Co. Ltd. | X-ray imaging detector with a gaseous electron multiplier |
| TW546494B (en) * | 1999-06-22 | 2003-08-11 | Moxtek Inc | Broadband wire grid polarizer for visible spectrum, method of making same, and apparatus for polarizing broad bandwidth |
| US8249400B2 (en) * | 2007-01-09 | 2012-08-21 | The Board Of Trustees Of The Leland Stanford Junior University | Optical structure on an optical fiber and method of fabrication |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5192861A (en) * | 1990-04-01 | 1993-03-09 | Yeda Research & Development Co. Ltd. | X-ray imaging detector with a gaseous electron multiplier |
| TW546494B (en) * | 1999-06-22 | 2003-08-11 | Moxtek Inc | Broadband wire grid polarizer for visible spectrum, method of making same, and apparatus for polarizing broad bandwidth |
| US8249400B2 (en) * | 2007-01-09 | 2012-08-21 | The Board Of Trustees Of The Leland Stanford Junior University | Optical structure on an optical fiber and method of fabrication |
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