TWI445796B - Followed by film and wafer processing tape - Google Patents
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- TWI445796B TWI445796B TW99136514A TW99136514A TWI445796B TW I445796 B TWI445796 B TW I445796B TW 99136514 A TW99136514 A TW 99136514A TW 99136514 A TW99136514 A TW 99136514A TW I445796 B TWI445796 B TW I445796B
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Description
本發明係關於接著薄膜及晶圓加工用膠帶。尤其，關於接著薄膜及含有具有切晶膠帶與固晶薄膜兩種功能之層合型切晶固晶薄膜之晶圓加工用膠帶。The present invention relates to an adhesive tape for film and wafer processing. In particular, there is a film for processing a film which is followed by a film and a laminated crystal-cut film having both functions of a dicing tape and a die-bonding film.
最近，已開發出在將半導體切斷分離(切割)成各個晶粒時用以固定半導體晶圓之切晶膠帶，及用以使切斷之半導體晶粒接著於導線架或封裝基板等之上，或者於堆疊封裝中，同時具有用以使半導體晶粒彼此層合、接著之接著薄膜(亦稱為固晶薄膜、黏晶薄膜)兩種功能之切晶固晶薄膜(DDF)。Recently, a dicing tape for fixing a semiconductor wafer when the semiconductor is cut (diced) into individual dies has been developed, and the semiconductor die to be cut is attached to a lead frame or a package substrate or the like. Or in a stacked package, there is a diced solid crystal film (DDF) for laminating semiconductor crystal grains to each other, followed by a film (also referred to as a solid crystal film, a die-bonding film).
該種切晶固晶薄膜，考量對半導體晶圓之貼附、或切晶時對圓形框架之安裝等作業性，而有施與預切割加工者。Such a crystal-cut solid crystal film is considered to have a workability in attaching to a semiconductor wafer or mounting a circular frame at the time of crystal cutting, and is applied to a pre-cutting processor.
製作施以預切割加工之具有切晶固晶薄膜之晶圓加工用膠帶，如例如專利文獻1所述，進行有於長條型脫模薄膜之整面上層合接著劑層而成之接著薄膜之接著劑層上以對應於半導體晶圓之圓形刀刃切入切口，自脫模薄膜剝離圓形部分之外側並捲取(以下稱為接著劑層之捲取步驟)，在利用該接著劑層之捲取步驟而挖空之圓形接著薄膜之接著劑層與在基材薄膜上層合黏著劑層而成之切晶膠帶之黏著劑層予以加熱加壓貼合，以對應於切晶膠帶中之圓形框架以圓形刀刃切入切口，剝離對應於圓形框架之部分並進行捲取。A wafer processing tape having a diced solid crystal film subjected to pre-cut processing is produced, and, as described in, for example, Patent Document 1, an adhesive film formed by laminating an adhesive layer on the entire surface of the elongated release film is formed. On the adhesive layer, a slit is cut into a circular blade corresponding to the semiconductor wafer, and the outer side of the circular portion is peeled off from the release film and taken up (hereinafter referred to as a winding step of the adhesive layer), and the adhesive layer is utilized. The winding step is performed by hollowing out the adhesive layer of the film and the adhesive layer of the dicing tape formed by laminating the adhesive layer on the substrate film, and is heated and pressed to correspond to the dicing tape. The circular frame is cut into the slit with a circular blade, and the portion corresponding to the circular frame is peeled off and taken up.
[專利文獻1]特開2007-2173號公報[Patent Document 1] JP-A-2007-2173
上述接著劑層之捲取步驟中，邊將一定之力加於圓形部分外側之接著劑層上，邊自脫模薄膜剝離圓形部分外側之接著劑層並經捲取。因此，於接著劑層捲取步驟之作業過程中，產生圓形部分外側之接著劑層被切斷之現象。為了捲取接著劑層，而有預先將接著劑層之端部固定在捲取用輥上等之初期作業，於切斷接著劑層時，必須暫時終止接著劑層之捲取作業，於進行初期作業後再重開，而有實施預切割加工之具有切晶固晶薄膜之晶圓加工用膠帶之生產性降低之問題。In the winding step of the above-mentioned adhesive layer, a certain force is applied to the adhesive layer on the outer side of the circular portion, and the adhesive layer on the outer side of the circular portion is peeled off from the release film and wound up. Therefore, during the operation of the adhesive layer winding step, the phenomenon that the adhesive layer on the outer side of the circular portion is cut is generated. In order to wind up the adhesive layer, the initial operation of fixing the end portion of the adhesive layer to the winding roller is performed, and when the adhesive layer is cut, it is necessary to temporarily terminate the winding operation of the adhesive layer. It is reopened after the initial work, and there is a problem that the productivity of the wafer processing tape having the diced solid crystal film which is subjected to pre-cut processing is lowered.
又，若為解決上述問題而將晶圓加工用膠帶之寬度較廣地去掉，則於接著劑層捲取步驟中，雖無將圓形部分外側之接著劑層切斷之現象，但會使成為不要之圓形部分外側之接著劑層之量，或半導體晶圓之切晶、半導體之固晶切晶晶粒等中成為不要之晶圓加工用膠帶的量變多。Further, if the width of the wafer processing tape is widely removed in order to solve the above problem, the adhesive layer on the outer side of the circular portion is not cut in the adhesive layer winding step, but The amount of the adhesive layer on the outer side of the unnecessary circular portion, or the amount of the wafer processing tape which is not required in the dicing of the semiconductor wafer or the solid crystal dicing crystal of the semiconductor is increased.
因此，本發明係為解決以上之問題點而發展者，其目的在於提供一種製作預切割加工成對應於半導體晶圓形狀的形狀之晶圓加工用膠帶時之自脫模薄膜剝離不要之接著劑層並捲取之步驟中，可防止捲取之接著劑層斷裂，同時可提高經預切割加工之晶圓加工用膠帶之生產性之接著薄膜，以及使用該接著薄膜製備之晶圓加工用膠帶。Accordingly, the present invention has been made in order to solve the above problems, and an object thereof is to provide an adhesive which is not peeled off from a release film when a wafer for processing a wafer which is pre-cut to a shape corresponding to a shape of a semiconductor wafer is produced. In the step of layer-and-rolling, the adhesive film which prevents breakage of the wound adhesive layer, and at the same time, improves the productivity of the pre-cut processed wafer processing tape, and the wafer processing tape prepared using the adhesive film .
本發明人等針對上述課題積極檢討之結果，發現藉由使用相對於自接著劑層之脫模薄膜之每單位剝離力，接著劑層之每同一單位之斷裂強度為87.5倍以上，較好為100倍以上之接著薄膜，於製備經預切割加工之晶圓加工用膠帶時之接著劑層捲取步驟中，可防止特定形狀之外側接著劑層之斷裂，進而，發現貼合該接著薄膜之接著劑層及黏著薄膜之黏著劑層，可改善經預切割加工之晶圓加工用膠帶之生產性，因而完成本發明。As a result of a positive review of the above-mentioned problems, the present inventors have found that the breaking strength per unit of the adhesive layer is 87.5 times or more, preferably by using the peeling force per unit of the release film from the adhesive layer. In the adhesive layer winding step of preparing the pre-cut processed wafer processing tape, the adhesive film of 100 times or more can prevent breakage of the side adhesive layer outside the specific shape, and further, it is found that the adhesive film is bonded. The adhesive layer of the adhesive layer and the adhesive film can improve the productivity of the pre-cut processed wafer processing tape, and thus the present invention has been completed.
亦即，本發明之第一樣態相關之接著薄膜為接著劑層層合於長條狀脫模薄膜上之接著薄膜，其特徵為相對於前述接著劑層自前述脫模薄膜之每單位剝離力，前述接著劑層之每同一單位之斷裂強度為87.5倍以上。That is, the adhesive film according to the first aspect of the present invention is an adhesive film in which an adhesive layer is laminated on the long release film, and is characterized in that each unit of the release film is peeled off from the release film. The breaking strength of each unit of the above-mentioned adhesive layer is 87.5 times or more.
此處，剝離力隨著與剝離方向垂直方向之大小而變化，且斷裂強度隨著拉伸方向大小而變化。因此，所謂「每同一單位」為使對剝離方向成垂直之方向的大小與拉伸方向之大小相同之情況(例如，與剝離方向成垂直之方向的大小設為10mm而測定剝離力時，斷裂強度係以使拉伸方向之大小成為10mm而測定)，其特徵為相對於此時之剝離力之斷裂強度為87.5倍以上。Here, the peeling force changes with the magnitude perpendicular to the peeling direction, and the breaking strength changes with the magnitude of the stretching direction. Therefore, the "same unit" is a case where the size in the direction perpendicular to the peeling direction is the same as the magnitude of the stretching direction (for example, when the size in the direction perpendicular to the peeling direction is 10 mm and the peeling force is measured, the fracture is broken. The strength was measured by setting the magnitude of the stretching direction to 10 mm, and the breaking strength with respect to the peeling force at this time was 87.5 times or more.
又，接著薄膜可為對應於如上述之半導體晶圓之切口預先切入到接著劑層狀態之接著薄膜，亦可為切口未切入到接著劑層之狀態之接著薄膜。Further, the film may be an adhesive film which is previously cut into the adhesive layer state in accordance with the slit of the semiconductor wafer as described above, or may be a film which is not cut into the adhesive layer.
本發明之第二樣態之接著薄膜為上述本發明之第一樣態相關之接著薄膜中，相對於前述接著劑層自前述脫模薄膜之每單位剝離力，前述接著劑層之每同一單位之斷裂強度為100倍以上。The adhesive film according to the second aspect of the present invention is the same unit of the above-mentioned adhesive layer in the adhesive film according to the first aspect of the present invention, and the same unit of the adhesive layer per unit peeling force from the adhesive layer. The breaking strength is 100 times or more.
本發明之第一樣態之晶圓加工用膠帶之特徵為使基材薄膜上層合有黏著劑層之黏著薄膜的前述黏著劑層與上述本發明之第一或第二樣態之接著薄膜之接著劑層貼合。The tape for wafer processing according to the first aspect of the present invention is characterized in that the adhesive layer of the adhesive film on which the adhesive film is laminated on the base film and the adhesive film of the first or second aspect of the present invention described above are used. The layers are then laminated.
藉由使用本發明之接著薄膜，在製備預切割加工成對應於半導體晶圓形狀之特定形狀的晶圓加工用膠帶時自脫模薄膜剝離不需要之特定形狀之外側接著劑層並捲取之接著劑層捲取步驟中，可防止特定形狀之外側接著劑層之破裂。又，貼合該接著層薄膜之接著層與黏著薄膜之黏著劑層，可改善預切割加工之晶圓加工用膠帶之生產性。且，可製作特定形狀之外側接著劑層之量較少，或半導體晶圓之切晶、半導體之固晶切晶等中成為不要之晶圓加工用膠帶之量較少且生產效率良好之晶圓加工用膠帶。By using the adhesive film of the present invention, when preparing a wafer processing tape which is pre-cut into a specific shape corresponding to the shape of the semiconductor wafer, the side adhesive layer which is not required to be peeled off from the release film is peeled off and wound up. In the subsequent layer winding step, cracking of the side adhesive layer outside the specific shape can be prevented. Further, by bonding the adhesive layer of the adhesive layer of the adhesive film to the adhesive layer of the adhesive film, the productivity of the pre-cut processing wafer processing tape can be improved. Further, it is possible to produce a crystal having a small amount of a side adhesive layer in a specific shape, or a crystal of a semiconductor wafer, a solid crystal dicing of a semiconductor, or the like, which has a small amount of a wafer processing tape and a good production efficiency. Tape for round processing.
以下基於圖式詳細說明本發明之實施形態。Embodiments of the present invention will be described in detail below based on the drawings.
圖1(a)為本發明一實施形態之接著薄膜之概視圖，圖1(b)為相同薄膜之剖面圖。如圖1(a)及圖1(b)所示，接著薄膜20B具有於長條狀脫模薄膜11上層合接著劑層12之構成。又，本實施形態係成為於接著劑層12上進一步層合脫模薄膜11A之構成，為可生產捲取成輥狀之製品之接著薄膜。又，申請專利範圍中記載之脫模薄膜相當於脫模薄膜11。Fig. 1(a) is a schematic view of a film which is an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view of the same film. As shown in Fig. 1 (a) and Fig. 1 (b), the film 20B is formed by laminating the adhesive layer 12 on the elongated release film 11. Further, in the present embodiment, the release film 11A is further laminated on the adhesive layer 12, and the film is a film which can be wound into a roll. Further, the release film described in the patent application scope corresponds to the release film 11.
半導體裝置之製造步驟中，對應於半導體晶圓形狀之圓形標籤形狀之接著劑層12係使用預切割加工之接著薄膜20(參照例如圖4(c))。因此，以下參照圖2及圖3說明經預切割加工之接著薄膜20之製作方法。In the manufacturing step of the semiconductor device, the adhesive film layer 20 of the circular label shape corresponding to the shape of the semiconductor wafer is a pre-cut film 20 (see, for example, FIG. 4(c)). Therefore, a method of fabricating the pre-cut film 20 will be described below with reference to FIGS. 2 and 3.
圖2(a)為用以說明於圓形標籤形狀之接著劑層12上切入切口之切口形成步驟之接著薄膜20A之平面圖，(b)為相同薄膜之剖面圖。圖3為用以說明自脫模薄膜11剝離成為不要的圓形標籤形狀之外側之接著劑層12並捲取之接著劑層捲取步驟之模式圖。Fig. 2(a) is a plan view showing the film 20A of the slit forming step in which the slit is formed in the circular label-shaped adhesive layer 12, and (b) is a cross-sectional view of the same film. Fig. 3 is a schematic view for explaining a step of winding up the adhesive layer 12 which is peeled off from the release film 11 to the outer side of the circular label shape which is unnecessary.
製作經預切割加工之接著薄膜20係首先自接著薄膜20B剝離脫模薄膜11A而成為接著薄膜20A(參照圖1(b))之狀態。The pre-cut film 20 is produced by first peeling the release film 11A from the film 20B to form a film 20A (see FIG. 1(b)).
接著，如圖2(a)及(b)所示，在接著薄膜20A中，於接著劑層12上形成對應於半導體晶圓形狀之圓形標籤形狀之切口22(切口22之形成步驟)。利用切口22，使接著劑層12被切斷成切口22內側之成為圓形標籤形狀之接著劑層(以下稱為圓形接著劑層部)12a，及切口22外側之接著劑層(以下稱為周邊接著劑層部)12b。此處，切口22係形成為自接著劑層12之表面23a到達接觸於脫模薄膜11之接著劑層12內面23b為止。Next, as shown in FIGS. 2(a) and 2(b), in the adhesive film 20A, a slit 22 having a circular label shape corresponding to the shape of the semiconductor wafer is formed on the adhesive layer 12 (step of forming the slit 22). The adhesive layer 12 is cut into a circular label-shaped adhesive layer (hereinafter referred to as a circular adhesive layer portion) 12a inside the slit 22, and an adhesive layer on the outer side of the slit 22 (hereinafter referred to as a slit 22). It is a peripheral adhesive layer portion 12b. Here, the slit 22 is formed from the surface 23a of the adhesive layer 12 to the inner surface 23b of the adhesive layer 12 which is in contact with the release film 11.
最後，如圖3所示，接著薄膜20A中，邊對周邊接著劑層部12b施加一定之力，邊自脫模薄膜11剝離並捲取周邊接著劑層部12b，成為在脫模薄膜11上僅殘留挖開之圓形接著劑層部12a(接著劑層之捲取步驟)。據此，製作將接著劑層12經預切割加工成對應於半導體晶圓形狀的圓形標籤形狀之接著薄膜20。Finally, as shown in FIG. 3, in the film 20A, a certain force is applied to the peripheral adhesive layer portion 12b, and the peripheral adhesive layer portion 12b is peeled off from the release film 11 and wound on the release film 11. Only the circular adhesive layer portion 12a (the winding step of the adhesive layer) is left. Accordingly, the adhesive film 20 is formed by pre-cutting the adhesive layer 12 into a circular label shape corresponding to the shape of the semiconductor wafer.
本實施形態之接著薄膜20B有具有以下構成方面之特徵。The adhesive film 20B of the present embodiment has the following features.
自脫模薄膜11剝離接著劑層12時，相對於其每單位之剝離力，接著劑層12之每一同單位之斷裂強度為87.5倍以上，較好為100倍以上。此處，剝離力隨著與剝離方向垂直方向之大小而變化，且斷裂強度隨著拉伸方向大小而變化。因此，所謂「每同一單位」為使與剝離方向成垂直之方向大小與拉伸方向大小設為相同之情況，例如以與剝離方向成垂直之方向大小設為10mm而測定剝離力時，斷裂強度係以使拉伸方向之大小設為10mm而測定。When the adhesive layer 11 is peeled off from the release film layer 11, the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 100 times or more, with respect to the peeling force per unit. Here, the peeling force changes with the magnitude perpendicular to the peeling direction, and the breaking strength changes with the magnitude of the stretching direction. Therefore, the "same unit" is a case where the size in the direction perpendicular to the peeling direction is the same as the size in the stretching direction, and for example, when the peeling force is measured by setting the peeling force to 10 mm in the direction perpendicular to the peeling direction, the breaking strength is used. The measurement was carried out by setting the size of the stretching direction to 10 mm.
接著，針對使接著薄膜之接著劑層與在基材薄膜上層合黏著劑層之黏著薄膜之黏著劑層貼合之晶圓加工用膠帶(切晶固晶薄膜)加以說明。Next, a wafer processing tape (Cut-crystalline solid crystal film) in which an adhesive layer of a film is bonded to an adhesive layer of an adhesive film on which a pressure-sensitive adhesive layer is laminated on a base film will be described.
圖4(a)為本發明一實施形態之晶圓加工用膠帶(切晶固晶薄膜)之概視圖，圖4(b)為相同膠帶之平面圖，圖4(c)為相同膠帶之剖面圖。Fig. 4 (a) is a schematic view showing a tape for processing a wafer (cut crystal film) according to an embodiment of the present invention, Fig. 4 (b) is a plan view of the same tape, and Fig. 4 (c) is a sectional view of the same tape. .
如圖4(a)、(b)及(c)所示，晶圓加工用膠帶10具有使經預切割加工之接著薄膜20之圓形接著劑層部12a，與於基材薄膜14上層合有黏著劑層15之黏著薄膜13的黏著劑層15貼合而成之構成。As shown in FIGS. 4(a), (b) and (c), the wafer processing tape 10 has a circular adhesive layer portion 12a of the pre-cut processed film 20 laminated on the base film 14. The adhesive layer 15 having the adhesive film 13 of the adhesive layer 15 is laminated.
黏著薄膜13具有覆蓋圓形接著劑層部12a且在圓形接著劑層部12a之周圍與脫模薄膜11接觸之方式設置之圓形標籤部13a，與包圍該圓形標籤部13a外側之周邊部13b。周邊部13b包含完全包圍圓形標籤部13a外側之形態，及如圖示之完全未包圍之形態。圓形標籤部13a具有對應於切晶用之圓形框架之形狀。The adhesive film 13 has a circular label portion 13a which is provided to cover the circular adhesive layer portion 12a and is in contact with the release film 11 around the circular adhesive layer portion 12a, and a periphery surrounding the outer side of the circular label portion 13a. Part 13b. The peripheral portion 13b includes a form that completely surrounds the outer side of the circular label portion 13a, and a form that is completely unenclosed as illustrated. The circular label portion 13a has a shape corresponding to a circular frame for dicing.
經預切割加工之晶圓加工用膠帶10首先係如圖2及圖3所示，製作將圓形接著劑層部12a層合於脫模薄膜11上之狀態的接著薄膜20。隨後，使黏著劑層15與圓形接著劑層部12a重疊之方式，加熱並貼合黏著薄膜13與接著薄膜20，於黏著薄膜13上切入切口，剝離不要的黏著薄膜13而形成圓形標籤部13a與周邊部13b，藉此製作預切割加工之晶圓加工用膠帶10。The pre-cut processed wafer processing tape 10 is first formed as a bonding film 20 in a state in which the circular adhesive layer portion 12a is laminated on the release film 11 as shown in FIGS. 2 and 3. Subsequently, the adhesive film 15 is superposed on the circular adhesive layer portion 12a, and the adhesive film 13 and the adhesive film 20 are heated and bonded, and the slit is cut into the adhesive film 13, and the unnecessary adhesive film 13 is peeled off to form a circular label. The portion 13a and the peripheral portion 13b are used to fabricate the pre-cut processed wafer processing tape 10.
又，亦可將黏著薄膜13切斷成圓形標籤部13a與周邊部13b之形狀後，藉由加熱並貼合經預切割加工之接著薄膜20與圓形標籤部13a及周邊部13b藉此製作經預切割加工之晶圓加工用膠帶10。Further, after the adhesive film 13 is cut into the shape of the circular label portion 13a and the peripheral portion 13b, the pre-cut film 20 and the circular label portion 13a and the peripheral portion 13b can be heated and bonded. A pre-cut processed wafer processing tape 10 is produced.
本實施形態之晶圓加工用膠帶10由於使用上述之本實施形態之接著薄膜20B製作，故具有與上述本實施形態之接著薄膜20B相同之特徵。亦即，相對於接著劑層12自脫模薄膜11之每單位剝離力，接著劑層12之每同一單位之斷裂強度為87.5倍以上，較好為100倍以上。Since the wafer processing tape 10 of the present embodiment is produced by using the above-described adhesive film 20B of the present embodiment, it has the same features as the adhesive film 20B of the above-described embodiment. That is, the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 100 times or more, per unit peeling force from the release film 11 of the adhesive layer 12.
以下針對本實施形態之接著薄膜20B及本實施形態之晶圓加工用膠帶10之各構成要素加以詳細說明。Hereinafter, each constituent element of the adhesive film 20B of the present embodiment and the wafer processing tape 10 of the present embodiment will be described in detail.
脫模薄膜11使用之目的為使接著劑層12之操作性良好。The purpose of the release film 11 is to make the adhesive layer 12 work well.
脫模薄膜11係使用例如聚乙烯薄膜、聚丙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚甲基戊烯薄膜、聚氯化乙烯薄膜、氯化乙烯共聚物薄膜、聚對苯二甲酸乙二酯薄膜、聚萘二甲酸乙二酯薄膜、聚對苯二甲酸丁二酯薄膜、聚胺基甲酸酯薄膜、乙烯‧乙酸乙烯酯共聚物薄膜、離子聚合物樹脂薄膜、乙烯‧(甲基)丙烯酸共聚物薄膜、乙烯‧(甲基)丙烯酸酯共聚物薄膜、聚苯乙烯薄膜、聚碳酸酯薄膜、聚醯亞胺薄膜、氟樹脂薄膜等。且亦可使用該等之交聯薄膜。再者亦可使用該等之層合薄膜。The release film 11 is, for example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, or a polyparaphenylene. Ethylene formate film, polyethylene naphthalate film, polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate film, ionic polymer resin film, vinyl (meth)acrylic copolymer film, ethylene ‧ (meth) acrylate copolymer film, polystyrene film, polycarbonate film, polyimide film, fluororesin film, and the like. These crosslinked films can also be used. Further, such laminated films can also be used.
脫模薄膜11之表面張力較好為40mN/m以下，更好為35 mN/m以下。該種表面張力低之脫模薄膜11可選擇適當材質而獲得，且亦可在薄膜表面塗佈矽氧樹脂等施以脫模處理而獲得。The surface tension of the release film 11 is preferably 40 mN/m or less, more preferably 35 mN/m or less. Such a release film 11 having a low surface tension can be obtained by selecting a suitable material, or can be obtained by applying a mold release treatment by applying a silicone resin or the like to the surface of the film.
脫膜薄膜11之膜厚通常為5~300μm，較好為10~200μm，最好為20~150μm左右。The film thickness of the release film 11 is usually 5 to 300 μm, preferably 10 to 200 μm, preferably 20 to 150 μm.
脫膜薄膜11A只要是可自接著劑層12剝離即無特別限制，但較好為聚對苯二甲酸乙二酯薄膜、聚丙烯薄膜、聚乙烯薄膜。且，脫膜薄膜11A較好為塗佈矽氧或經烙印。脫膜薄膜11A之厚度並無特別限制，但較好為15~125μm。The release film 11A is not particularly limited as long as it can be peeled off from the adhesive layer 12, but is preferably a polyethylene terephthalate film, a polypropylene film or a polyethylene film. Further, the release film 11A is preferably coated with oxygen or branded. The thickness of the release film 11A is not particularly limited, but is preferably 15 to 125 μm.
接著劑層12為貼合半導體晶圓等並經切晶後，拾取半導體晶粒時，附著於半導體晶粒之背面，將晶粒固定在基板或導線架上之際作為接著劑使用者。The adhesive layer 12 is bonded to a semiconductor wafer or the like and then diced, and when the semiconductor crystal grains are picked up, adheres to the back surface of the semiconductor crystal grains, and serves as an adhesive user when the crystal grains are fixed on the substrate or the lead frame.
至於接著劑層12可使用聚醯亞胺樹脂、聚醯胺樹脂、聚醚醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹脂、聚酯樹脂、聚酯醯亞胺樹脂、苯氧樹脂、聚碸樹脂、聚醚碸樹脂、聚苯硫醚樹脂、聚醚酮樹脂、氯化聚丙烯樹脂、丙烯酸樹脂、聚胺基甲酸酯樹脂、環氧樹脂、聚丙烯醯胺樹脂、三聚氫胺樹脂等或其混合物。As the adhesive layer 12, a polyimide resin, a polyamide resin, a polyether phthalimide resin, a polyamide amide resin, a polyester resin, a polyester resin, a polyester phthalimide resin, a phenoxy group can be used. Resin, polyfluorene resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane resin, epoxy resin, polypropylene amide resin, melamine Resin or the like or a mixture thereof.
至於聚合物，較好使用含有環氧基之丙基酸共聚物。該含有環氧基之丙基酸共聚物含有0.5~6質量%之具有環氧基之丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯。為了獲得與半導體晶圓之高接著力，較好為0.5質量%以上，若控制在6質量%以下則可抑制凝膠化。上述含有環氧基之丙烯酸共聚物之玻璃轉移溫度(Tg)較好為-10℃以上30℃以下。As the polymer, a propyl acid copolymer containing an epoxy group is preferably used. The epoxy group-containing propyl acid copolymer contains 0.5 to 6% by mass of an epoxy group-containing glycidyl acrylate or glycidyl methacrylate. In order to obtain a high adhesion force with a semiconductor wafer, it is preferably 0.5% by mass or more, and if it is controlled to 6% by mass or less, gelation can be suppressed. The glass transition temperature (Tg) of the epoxy group-containing acrylic copolymer is preferably -10 ° C or more and 30 ° C or less.
作為官能基單體使用之丙烯酸縮水甘油酯或甲基丙烯酸縮水甘油酯之量為0.5~6質量%之共聚物比，但其餘部分可使用丙烯酸甲酯、甲基丙烯酸甲酯等具有碳數1~8之烷基之丙烯酸烷酯、甲基丙烯酸烷酯、及苯乙烯或丙烯腈等之混合物。該等中以(甲基)丙烯酸乙酯及/或(甲基)丙烯酸丁酯最佳。混合比率較好考慮共聚物之玻璃轉移溫度(Tg)而調整。聚合方法並無特別限制，列舉為例如珍珠聚合(pearl polymerization)、溶液聚合等，藉由該等方法獲得共聚物。該等含有環氧基之丙烯酸酯共聚物列舉為例如HTR-860P-3(Nagase Chemtex股份有限公司製造，商品名)。The amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is from 0.5 to 6% by mass of the copolymer ratio, but the remainder may be methyl acrylate, methyl methacrylate or the like having a carbon number of 1 a mixture of alkyl acrylates of ~8 alkyl groups, alkyl methacrylates, and styrene or acrylonitrile. Among these, ethyl (meth)acrylate and/or butyl (meth)acrylate are preferred. The mixing ratio is preferably adjusted in consideration of the glass transition temperature (Tg) of the copolymer. The polymerization method is not particularly limited, and examples thereof include pearl polymerization, solution polymerization, and the like, and a copolymer is obtained by these methods. The epoxy group-containing acrylate copolymer is exemplified by, for example, HTR-860P-3 (manufactured by Nagase Chemtex Co., Ltd., trade name).
丙烯酸系共聚物之重量平均分子量為五萬以上，最好為20萬~100萬之範圍。分子量太低時薄膜形成不充分，太高時與其他成分之相溶性變差，結果妨礙薄膜形成。The acrylic copolymer has a weight average molecular weight of 50,000 or more, preferably 200,000 to 1,000,000. When the molecular weight is too low, the film formation is insufficient, and when it is too high, compatibility with other components is deteriorated, and as a result, film formation is hindered.
使用環氧樹脂作為熱硬化性成分時，可使用例如酚系樹脂作為硬化劑。至於酚系樹脂可無特別限制的使用烷基酚、多價酚、萘酚等酚類與醛類之縮合物。該等酚系樹脂中所含之酚性羥基藉由與環氧樹脂之環氧基加熱容易地進行加成反應，可形成耐衝擊性高之硬化物。When an epoxy resin is used as the thermosetting component, for example, a phenol resin can be used as the curing agent. As the phenol resin, a condensate of a phenol such as an alkylphenol, a polyvalent phenol or a naphthol and an aldehyde can be used without particular limitation. The phenolic hydroxyl group contained in the phenolic resin can be easily subjected to an addition reaction by heating with an epoxy group of an epoxy resin, whereby a cured product having high impact resistance can be formed.
酚系樹脂較好使用酚酚醛樹脂、鄰-甲酚酚醛樹脂、對-甲酚酚醛樹脂、第三丁基酚酚醛樹脂、二環戊二烯甲酚樹脂、聚對乙烯酚樹脂、雙酚A型酚醛樹脂、或者該等之改質物等。The phenolic resin is preferably a phenol novolac resin, an o-cresol novolac resin, a p-cresol novolac resin, a third butyl phenol novolak resin, a dicyclopentadiene cresol resin, a poly(p-vinylphenol resin), or a bisphenol A. A phenolic resin, or a modified substance thereof.
另外，可使用熱活性型潛在性環氧樹脂硬化劑作為硬化劑。該硬化劑為在室溫不與環氧樹脂反應，藉由在某一溫度以上加熱而活性化，並與環氧樹脂反應之類型的硬化劑。In addition, a thermally active latent epoxy resin hardener can be used as the hardener. The hardener is a type of hardener which does not react with an epoxy resin at room temperature, is activated by heating at a certain temperature or higher, and reacts with an epoxy resin.
活性化方法存在有藉由加熱生成於化學反應之活性物種(陰離子、陽離子)之方法；在室溫附近安定地分散於環氧樹脂中而在高溫與環氧樹脂相溶‧溶解，並開始硬化反應之方法；藉由分子篩封入類型之硬化劑在高溫溶出並開始硬化反應之方法；利用微膠囊之方法等。The activation method has a method of generating an active species (anion, a cation) formed by chemical reaction by heating; it is stably dispersed in an epoxy resin at room temperature, and is dissolved at a high temperature with an epoxy resin, dissolved, and begins to harden. A method of reacting; a method of dissolving at a high temperature by a molecular sieve sealing type hardening agent and starting a hardening reaction; a method using a microcapsule or the like.
熱活性型潛在性環氧樹脂硬化劑可列舉為各種鎓鹽，或二鹼酸二醯肼化合物、二氰基二醯胺、胺加成物硬化劑、咪唑化合物等高熔點活性氫化合物等。Examples of the thermally active latent epoxy resin hardeners include various sulfonium salts, or dibasic acid diterpenoids, dicyanodiamine, amine adduct hardeners, and high melting active hydrogen compounds such as imidazole compounds.
使用環氧樹脂作為熱硬化性成分時，亦可使用硬化促進劑等作為助劑。本發明中可使用之硬化促進劑並無特別限制，可使用例如三級胺、咪唑類、四級銨鹽等。本發明中可較好使用之咪唑類列舉為例如2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-苯基咪唑鎓偏苯三酸鹽等。該等可使用一種亦可併用兩種以上。咪唑類為例如由四國化成工業(股)以2E4MZ、2PZ-CN、2PZ-CNS之商品名銷售。When an epoxy resin is used as a thermosetting component, a hardening accelerator or the like may be used as an auxiliary agent. The hardening accelerator which can be used in the present invention is not particularly limited, and for example, a tertiary amine, an imidazole, a quaternary ammonium salt or the like can be used. The imidazoles which can be preferably used in the present invention are exemplified by, for example, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl- 2-Phenylimidazolium trimellitate or the like. These may be used alone or in combination of two or more. The imidazoles are sold, for example, under the trade names of 2E4MZ, 2PZ-CN, and 2PZ-CNS by Shikoku Chemical Industries Co., Ltd.
又，亦可調配填料。至於填料舉例有結晶二氧化矽、合成二氧化矽等二氧化矽，或氧化鋁、玻璃球等無機填料。藉由於接著劑層12中添加無機填料，可改善硬化後之接著劑層12硬度。且，可使硬化後之接著劑層12之熱膨脹係數接近於晶圓之熱膨脹係數，藉此可降低加工過程中半導體晶圓之翹曲。填料較好為合成二氧化矽，尤其是極力消除成為半導體裝置誤動作之要因之α線之射線源之類型的合成二氧化矽最適用。填料之形狀亦可使用球形、針狀、無定型類型者之任一種，但最好為可最密實充填之球形填料。In addition, the filler can also be formulated. Examples of the filler include cerium oxide such as crystalline cerium oxide, synthetic cerium oxide, or an inorganic filler such as alumina or glass sphere. By adding an inorganic filler to the adhesive layer 12, the hardness of the adhesive layer 12 after hardening can be improved. Moreover, the thermal expansion coefficient of the cured adhesive layer 12 can be made close to the thermal expansion coefficient of the wafer, thereby reducing the warpage of the semiconductor wafer during processing. The filler is preferably a synthetic cerium oxide, and is particularly suitable for the synthesis of cerium oxide of the type which is a source of alpha rays which is a cause of malfunction of semiconductor devices. The shape of the filler may also be any one of a spherical, needle-shaped, and amorphous type, but it is preferably a spherical filler which can be most densely packed.
另外，為了使異種材料間之界面結合良好，亦可調配偶合劑。偶合劑較好為矽烷偶合劑。至於矽烷偶合劑列舉為γ-縮水甘油氧基丙基三甲氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-脲基丙基三乙氧基矽烷、N-β-胺基乙基-γ-胺基丙基三甲氧基矽烷等。偶合劑之調配量就添加產生之效果或耐熱性及成本而言，相對於形成分散相與連續相各別組成物之合計100重量份，較好添加0.1~10重量份。In addition, in order to make the interface between the dissimilar materials good, the coupling agent can also be formulated. The coupling agent is preferably a decane coupling agent. As the decane coupling agent, γ-glycidoxypropyltrimethoxydecane, γ-mercaptopropyltrimethoxydecane, γ-aminopropyltriethoxydecane, γ-ureidopropyltriethoxy Basear, N-β-aminoethyl-γ-aminopropyltrimethoxydecane, and the like. The blending amount of the coupling agent is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the total of the respective components of the dispersed phase and the continuous phase in terms of the effect of addition or heat resistance and cost.
又，漆料化之溶劑較好使用沸點較低之甲基乙基酮、丙酮、甲基異丁基酮、2-乙氧基乙醇、甲苯、丁基溶纖劑、甲醇、乙醇、2-甲氧基乙醇等。又，就改善塗膜性等目地，亦可添加高沸點溶劑。高沸點溶劑列舉為二甲基乙醯胺、二甲基甲醯胺、甲基吡咯啶酮、環己酮等。Further, the solvent for lacquering is preferably a methyl ethyl ketone having a lower boiling point, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxy Base ethanol and the like. Further, a high boiling point solvent may be added for the purpose of improving the coating property and the like. The high boiling point solvent is exemplified by dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.
接著劑層12之厚度可適宜設定，但較好為5~100μm左右。The thickness of the layer 12 may be appropriately set, but is preferably about 5 to 100 μm.
為提高接著劑層12之斷裂強度，以增多聚合物，漸少填料、減少環氧樹脂(固體成分)為有效。另外，就降低接著劑層12自脫膜薄膜11之剝離力而言，以減少聚合物，減少環氧樹脂(液狀)為有效。In order to increase the breaking strength of the adhesive layer 12, it is effective to increase the amount of the polymer, to gradually reduce the filler, and to reduce the epoxy resin (solid content). Further, in order to reduce the peeling force of the adhesive layer 12 from the release film 11, it is effective to reduce the polymer and reduce the epoxy resin (liquid).
黏著薄膜13並無特別限制，只要是具有切割半導體晶圓時不會使半導體晶圓剝離之充分黏著劑，且切割後拾取晶粒時顯示可輕易地自接著劑層12剝離之低黏著力者即可。例如，可使用將黏著劑層15設置於基材薄膜14上者。The adhesive film 13 is not particularly limited as long as it has a sufficient adhesive which does not peel the semiconductor wafer when the semiconductor wafer is diced, and shows a low adhesion which can be easily peeled off from the adhesive layer 12 when the dies are picked up after dicing. Just fine. For example, the adhesive layer 15 may be provided on the base film 14.
黏著薄膜13之基材薄膜14只要是過去習知者即可無特別限制的使用，但使用輻射線硬化性材料作為後述之黏著劑層15時，較好使用具有輻射線透過性者。The base film 14 of the adhesive film 13 is not particularly limited as long as it is conventionally used. However, when a radiation curable material is used as the adhesive layer 15 to be described later, it is preferred to use a radiation-transmitting property.
例如，作為其材料，可列舉有聚乙烯、聚丙烯、乙基-丙烯共聚物、聚丁烯-1、聚-4-甲基戊烯-1、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲酯共聚物、乙烯-丙烯酸共聚物、離子聚合物等之α-烯烴之均聚物或共聚物或者該等之混合物；聚胺基甲酸酯、苯乙烯-乙烯-丁烯或戊烯系共聚物；聚醯胺-多元醇共聚物等熱可塑性彈性體，及該等之混合物。又基材薄膜14可為混合由該等群組所選出之兩種以上材料而成者，亦可為使該等以單層或多層化而成者。For example, examples of the material thereof include polyethylene, polypropylene, ethyl-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, and ethylene-acrylic acid. a homopolymer or copolymer of an α-olefin of an ethyl ester copolymer, an ethylene-methyl acrylate copolymer, an ethylene-acrylic acid copolymer, an ionic polymer or the like or a mixture thereof; a polyurethane, styrene- An ethylene-butene or pentene copolymer; a thermoplastic elastomer such as a polyamine-polyol copolymer, and mixtures thereof. Further, the base film 14 may be a mixture of two or more materials selected from the groups, or may be formed by a single layer or a plurality of layers.
基材薄膜14之厚度並無特別限制，可適宜設定，但較好為50~200μm。The thickness of the base film 14 is not particularly limited and may be appropriately set, but is preferably 50 to 200 μm.
黏著薄膜13之黏著劑層15中使用之樹脂並無特別限制，可使用黏著劑中使用之習知氯化聚丙烯樹脂、丙烯酸樹脂、聚酯樹脂、聚胺基甲酸酯樹脂、環氧樹脂等。The resin used in the adhesive layer 15 of the adhesive film 13 is not particularly limited, and a conventional chlorinated polypropylene resin, an acrylic resin, a polyester resin, a polyurethane resin, or an epoxy resin used in the adhesive can be used. Wait.
黏著劑層15之樹脂較好為調製適宜調配丙烯酸系黏著劑、輻射線聚合性化合物、光聚合起始劑、硬化劑等而成之黏著劑。黏著劑層15之厚度並無特別限制，適宜設定即可，但較好為5~30μm。The resin of the adhesive layer 15 is preferably an adhesive prepared by preparing an acrylic adhesive, a radiation polymerizable compound, a photopolymerization initiator, a hardener, or the like. The thickness of the adhesive layer 15 is not particularly limited and may be appropriately set, but is preferably 5 to 30 μm.
於黏著劑層15中調配輻射線聚合性化合物並經輻射線硬化可易於自接著劑層12剝離。該輻射線聚合性化合物係使用例如藉由光照射而三次元網狀化之分子內至少具有兩個以上之光聚合性碳-碳雙鍵之低分子量化合物。The radiation polymerizable compound is formulated in the adhesive layer 15 and is easily delaminated from the adhesive layer 12 by radiation hardening. The radiation polymerizable compound is a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule which is three-dimensionally networked by light irradiation, for example.
具體而言可使用三羥甲基丙烷三丙烯酸酯、季戊四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯、1,6-己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、或寡聚酯丙烯酸酯等。Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1 can be used. , 6-hexanediol diacrylate, polyethylene glycol diacrylate, or oligoester acrylate, and the like.
又，除上述之丙烯酸酯系化合物以外，亦可使用胺基甲酸酯丙烯酸酯系寡聚物。胺基甲酸酯丙烯酸酯系寡聚物為於使聚酯型或聚醚型等之多元醇化合物與多價異氰酸酯化合物(例如，2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、1,3-二甲苯二異氰酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷4,4-二異氰酸酯等)反應獲得之末端異氰酸酯胺基甲酸酯預聚物中，使具有羥基之丙烯酸酯或甲基丙烯酸酯(例如，丙烯酸2-羥基乙酯、甲基丙烯酸2-羥基乙酯、丙烯酸2-羥基丙酯、甲基丙烯酸2-羥基丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等)反應而獲得。Further, in addition to the above acrylate-based compound, a urethane acrylate-based oligomer can also be used. The urethane acrylate oligomer is a polyol compound such as a polyester or a polyether, and a polyvalent isocyanate compound (for example, 2,4-toluene diisocyanate or 2,6-toluene diisocyanate, Acetic acid having a hydroxyl group in a terminal isocyanate urethane prepolymer obtained by reacting 1,3-xylene diisocyanate, 1,4-dimethylbenzene diisocyanate, diphenylmethane 4,4-diisocyanate or the like Ester or methacrylate (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene Obtained by reaction of diol methacrylate or the like.
黏著劑層15亦可為混合選自上述樹脂之兩種以上而成者。The adhesive layer 15 may be a mixture of two or more selected from the above resins.
使用光聚合起始劑時，可使用例如異丙基苯偶因醚、異丁基苯偶因醚、二苯甲酮、米氏(Michler’s)酮、氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮、苄基二甲基縮酮、α-羥基環己基苯基酮、2-羥基甲基苯基丙烷等。該等光聚合起始劑之調配量相對於丙烯酸系共聚物100質量份較好為0.01~5質量份。When a photopolymerization initiator is used, for example, isopropyl benzoine ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecyl thioxanthene can be used. Ketone, dimethyl thioxanthone, diethyl thioxanthone, benzyl dimethyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-hydroxymethyl phenyl propane, and the like. The amount of the photopolymerization initiator to be added is preferably from 0.01 to 5 parts by mass based on 100 parts by mass of the acrylic copolymer.
以下，針對本發明實施例加以說明，但本發明並不限於該等實施例。Hereinafter, the embodiments of the present invention will be described, but the present invention is not limited to the embodiments.
於下述表1中所示調配之接著劑層組成物1A~1D中添加甲基乙基酮，並攪拌混合製作接著劑漆料。將製作之接著劑層組成物1A~1D之接著劑漆料，以表2及表3所示之組合，以乾燥後之厚度成為20μm之方式塗佈於脫膜薄膜11上，在110℃乾燥3分鐘，於各脫膜薄膜11上製作接著劑層12。接著，於各接著劑層12上，貼合與上述同樣之另一脫膜薄膜11A，製作下述表2所示之實施例1~4及下述表3所示之比較例1~4中之以脫膜薄膜11與接著劑層12及脫膜薄膜11A之順序層合之三層構成之接著薄膜20B。Methyl ethyl ketone was added to the adhesive layer compositions 1A to 1D prepared as shown in the following Table 1, and stirred and mixed to prepare an adhesive paint. The adhesive composition of the adhesive layer composition 1A to 1D produced was applied to the release film 11 so as to have a thickness of 20 μm after drying, and dried at 110 ° C in a combination shown in Table 2 and Table 3. The adhesive layer 12 was formed on each of the release films 11 at 3 minutes. Next, another release film 11A similar to the above was bonded to each of the adhesive layers 12 to prepare Examples 1 to 4 shown in Table 2 below and Comparative Examples 1 to 4 shown in Table 3 below. The film 20B is composed of three layers in which the release film 11 and the adhesive layer 12 and the release film 11A are laminated in this order.
表1中各成分之調配比例單位為質量份。又，表1中之A1(丙烯酸系聚合物)為重量平均分子量85萬，玻璃轉移溫度(Tg)為150℃之丙烯酸系共聚物。又，B1(環氧樹脂(固體))為環氧當量265~285之酚伸聯苯型環氧樹脂。另外，B2(環氧樹脂(液狀))為環氧當量162~172之液狀雙酚A型環氧樹脂。又，C1(硬化劑(1))為二氰二醯胺，C2(硬化劑(2))為芳烷基酚樹脂。又，D1(硬化促進劑)為咪唑化合物(2-苯基4,5-二羥基甲基咪唑)。另外，E1(二氧化矽填料)為平均粒徑2μm之球狀合成二氧化矽。The proportions of the ingredients in Table 1 are in parts by mass. Further, A1 (acrylic polymer) in Table 1 is an acrylic copolymer having a weight average molecular weight of 850,000 and a glass transition temperature (Tg) of 150 °C. Further, B1 (epoxy resin (solid)) is a phenol-extended biphenyl type epoxy resin having an epoxy equivalent of 265 to 285. Further, B2 (epoxy resin (liquid)) is a liquid bisphenol A type epoxy resin having an epoxy equivalent of 162 to 172. Further, C1 (hardener (1)) is dicyanamide, and C2 (hardener (2)) is an aralkylphenol resin. Further, D1 (hardening accelerator) is an imidazole compound (2-phenyl 4,5-dihydroxymethylimidazole). Further, E1 (cerium oxide filler) is a spherical synthetic cerium oxide having an average particle diameter of 2 μm.
表2及表3中之S314為經脫模處理之聚對苯二甲酸乙二酯(PET)薄膜(帝人Dupon Film製造，商品名)，K-1504為經脫模處理之PET薄膜(東洋紡績公司製造，商品名)。S314 in Tables 2 and 3 is a release-treated polyethylene terephthalate (PET) film (manufactured by Teijin Dupon Film, trade name), and K-1504 is a release-treated PET film (Toyo Textile Co., Ltd.) Company manufacturing, trade name).
針對實施例1~4及比較例1~4，測定各斷裂強度、剝離力，同時進行預切割性之評價。表2及表3中，顯示斷裂強度、剝離力之測定結果，斷裂強度與剝離力之比(斷裂強度/剝離力)，及預切割性之評價。With respect to Examples 1 to 4 and Comparative Examples 1 to 4, each breaking strength and peeling force were measured, and the pre-cut property was evaluated. In Tables 2 and 3, the measurement results of the breaking strength and the peeling force, the ratio of the breaking strength to the peeling force (breaking strength/peeling force), and the evaluation of the pre-cut property are shown.
將在脫模薄膜11與脫模薄膜11A之間挾持接著劑層12之狀態之實施例1~4之接著薄膜20B及比較例1~4之接著薄膜沖壓成一號啞鈴形狀，剝離脫模薄膜11及脫模薄膜11A製備僅有接著劑層12之試驗片。試驗片之斷裂強度係依據JIS B 7721、JIS K 6301，使用東洋精機製作所(股)製造之STROGRAPH(VE10)，以線速300mm/min拉伸，測定直到斷裂為止之最大荷重。又，斷裂強度之單位為[N/10mm]。The adhesive film of Example 1 to 4 in which the adhesive layer 12 was held between the release film 11 and the release film 11A, and the adhesive film of Comparative Examples 1 to 4 were punched into a dumbbell shape, and the release film 11 was peeled off. And the release film 11A was prepared as a test piece having only the adhesive layer 12. The breaking strength of the test piece was measured by using STROGRAPH (VE10) manufactured by Toyo Seiki Seisakusho Co., Ltd. in accordance with JIS B 7721 and JIS K 6301, and stretched at a line speed of 300 mm/min, and the maximum load until breaking was measured. Further, the unit of the breaking strength is [N/10 mm].
剝離實施例1~4之接著薄膜20B及比較例1~4之接著薄膜單面之脫模薄膜11A，以2kg之滾筒將形狀保持膠帶(積水化學公司製造，商品名：FORTE)貼合於已剝離脫模薄膜11A之接著劑層12之表面上，切成25mm寬之短條狀，製作脫模薄膜11與接著劑層12及形狀保持膠帶之順序層合之三層構成之試驗片。以東洋精機製作所(股)製造之STROGRAPH(VE10)，將製作之試驗片使脫模薄膜11與接著劑層12及形狀保持膠帶之層合體分開並捏住，以線速300mm/min測定脫模薄膜11與接著劑層12之間之剝離力。又，剝離力之單位為[N/10mm]。又，分開為脫模薄膜11，與接著劑層12及形狀保持膠帶之層合體之理由，係因為自脫模薄膜11剝離接著劑層12及形狀維持膠帶之層合體，僅捏住接著劑層12剝離時，接著劑層12伸長之故。The release film 11B of the film of Example 1 to 4 and the film 1A of the film of the comparative example 1 to 4 were peeled off, and the shape-retaining tape (manufactured by Sekisui Chemical Co., Ltd., trade name: FORTE) was attached to the film by a 2 kg roller. The surface of the adhesive layer 12 on which the release film 11A was peeled off was cut into a strip shape having a width of 25 mm, and a test piece composed of three layers in which the release film 11 and the adhesive layer 12 and the shape-retaining tape were laminated in this order was prepared. STROGRAPH (VE10) manufactured by Toyo Seiki Seisakusho Co., Ltd., and the prepared test piece was separated and kneaded by the laminate of the release film 11 and the adhesive layer 12 and the shape-retaining tape, and the release was measured at a line speed of 300 mm/min. The peeling force between the film 11 and the adhesive layer 12. Further, the unit of the peeling force is [N/10 mm]. Further, the reason for separating the release film 11 and the laminate of the adhesive layer 12 and the shape-retaining tape is because the laminate of the adhesive layer 12 and the shape-maintaining tape is peeled off from the release film 11, and only the adhesive layer is pinched. When the 12 peeled off, the adhesive layer 12 was elongated.
預切割性之評價係針對實施例1~4之接著薄膜20B及比較例1~4之接著薄膜，在剝離單面的脫模薄膜11A而由脫模薄膜11與接著劑層12所構成之二層構成之接著劑層薄膜20A上，以58.5mm間隔切出12英吋晶圓用之直徑320mm之圓形切口，以加工速度10m/min將周邊接著劑層部12b自脫模薄膜11剝離並捲取100m，完全無斷裂之情況評價為「○」，出現斷裂之情況評價為「×」。又，接著薄膜之整卷寬度為390mm與450m。The evaluation of the pre-cutting property was performed on the release film 20B of Examples 1 to 4 and the adhesive film of Comparative Examples 1 to 4, and the release film 11A and the adhesive layer 12 were formed by peeling off the single-sided release film 11A. On the layer of the adhesive layer film 20A, a circular slit having a diameter of 320 mm for a 12-inch wafer was cut at intervals of 58.5 mm, and the peripheral adhesive layer portion 12b was peeled off from the release film 11 at a processing speed of 10 m/min. When the coiling was performed for 100 m, the case where no fracture occurred at all was evaluated as "○", and the case where the fracture occurred was evaluated as "x". Further, the entire roll width of the film was 390 mm and 450 m.
如表2所示，實施例1之接著薄膜20B由於斷裂強度與剝離力之比(斷裂強度/剝離力)為150，在規定斷裂強度與剝離力之比的上述87.5以上範圍，故預切割性之結果於整卷寬度為390mm之情況與450mm之情況均完全未斷裂。As shown in Table 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) of the film 20B of Example 1 was 150, and the pre-cutting property was in the range of 87.5 or more of the ratio of the predetermined breaking strength to the peeling force. As a result, the case where the entire roll width was 390 mm and the case where the whole roll width was 450 mm was not broken at all.
實施例2之接著薄膜20B由於斷裂強度與剝離力之比(斷裂強度/剝離力)為100，在規定斷裂強度與剝離力之比的上述87.5以上範圍，故預切割性之結果於整卷寬度為390mm之情況與450mm之情況均完全未斷裂。In the adhesive film 20B of Example 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 100, and the ratio of the predetermined breaking strength to the peeling force was in the above range of 87.5 or more, so that the result of the pre-cut property was in the entire roll width. The case of 390 mm and the case of 450 mm were completely unbroken.
實施例3之接著薄膜20B由於斷裂強度與剝離力之比(斷裂強度/剝離力)為225，在規定斷裂強度與剝離力之比的上述87.5以上範圍，故預切割性之結果於整卷寬度為390mm之情況與450mm之情況均完全為斷裂。In the adhesive film 20B of Example 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 225, and the ratio of the predetermined breaking strength to the peeling force was in the above range of 87.5 or more, so the result of the pre-cut property was in the entire roll width. Both the case of 390 mm and the case of 450 mm are completely broken.
實施例4之接著薄膜20B由於斷裂強度與剝離力之比(斷裂強度/剝離力)為150，在規定斷裂強度與剝離力之比的上述87.5以上範圍，故預切割性之結果於整卷寬度為390mm之情況與450mm之情況均完全未斷裂。In the adhesive film 20B of Example 4, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 150, and the ratio of the predetermined breaking strength to the peeling force was in the range of 87.5 or more, so the result of the pre-cut property was the entire roll width. The case of 390 mm and the case of 450 mm were completely unbroken.
如表3所示，比較例1之接著薄膜由於斷裂強度與剝離力之比(斷裂強度/剝離力)為83.3，在規定斷裂強度與剝離力之比的上述87.5以上之範圍之外，故預切割性之結果於整卷寬度為450mm之情況完全未斷裂，但於390mm時出現斷裂。As shown in Table 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) of the film of Comparative Example 1 was 83.3, which was outside the range of 87.5 or more of the ratio of the predetermined breaking strength to the peeling force. As a result of the cutting property, the entire roll width was 450 mm, and the crack did not occur at all, but the crack occurred at 390 mm.
比較例2之接著薄膜由於斷裂強度與剝離力之比(斷裂強度/剝離力)為50，在規定斷裂強度與剝離力之比之上述87.5以上之範圍外，故預切割性之結果於整卷寬度為390mm之情況與450mm之情況均出現斷裂。In the film of Comparative Example 2, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 50, and the ratio of the predetermined breaking strength to the peeling force was outside the range of 87.5 or more, so the result of the pre-cutting property was in the whole roll. There is a break in the case of a width of 390 mm and a case of 450 mm.
比較例3之接著薄膜由於斷裂強度與剝離力之比(斷裂強度/剝離力)為58.3，在規定斷裂強度與剝離力之比的上述87.5以上之範圍外，故預切割性之結果於整卷寬度為450mm之情況完全未斷裂，但390mm時出現斷裂。In the film of Comparative Example 3, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 58.3, and the ratio of the predetermined breaking strength to the peeling force was outside the range of 87.5 or more, so the result of the pre-cutting property was in the whole roll. The case where the width is 450 mm is not broken at all, but breakage occurs at 390 mm.
比較例4之接著薄膜由於斷裂強度與剝離力之比(斷裂強度/剝離力)為38.9，在規定斷裂強度與剝離力之比的上述87.5以上之範圍外，故預切割性之結果於整卷寬度為390mm及450mm之情況均出現斷裂。In the film of Comparative Example 4, the ratio of the breaking strength to the peeling force (breaking strength/peeling force) was 38.9, and the ratio of the predetermined breaking strength to the peeling force was outside the range of 87.5 or more, so the result of the pre-cutting property was in the whole roll. Breakage occurred in the case of widths of 390 mm and 450 mm.
由表2及表3之結果，藉由使用相對於接著劑層12自脫模薄膜11之每單位剝離力，接著劑層12之每同一單位之斷裂強度為87.5倍以上，較好為100倍以上之本實施形態之接著薄膜20，可防止製作預切割成對應於半導體晶圓形狀之形狀之晶圓加工用膠帶10時之接著劑層捲取步驟中之周邊接著劑層部12b之斷裂。且，可提高使用本實施形態之接著薄膜20製作經預切割加工之晶圓加工用膠帶10之生產性。又，可製備成為不要之周邊接著劑層部12b之量或半導體晶圓之切晶、半導體切晶固晶等成為不要之晶圓加工用膠帶10之量較少且生產效率良好之晶圓加工用膠帶10。From the results of Tables 2 and 3, by using the peeling force per unit from the release film 11 with respect to the adhesive layer 12, the breaking strength per unit of the adhesive layer 12 is 87.5 times or more, preferably 100 times. In the adhesive film 20 of the present embodiment described above, it is possible to prevent breakage of the peripheral adhesive layer portion 12b in the adhesive layer winding step in the case where the wafer processing tape 10 which is pre-cut into the shape of the semiconductor wafer is formed. Further, the productivity of the pre-cut processed wafer processing tape 10 using the bonding film 20 of the present embodiment can be improved. Further, it is possible to prepare a wafer processing apparatus in which the amount of the peripheral adhesive layer portion 12b which is not required, the dicing of the semiconductor wafer, the semiconductor dicing die bond, etc., which are unnecessary, and the production efficiency is good. Use tape 10.
10．．．晶圓加工用膠帶10. . . Wafer processing tape
11、11A．．．脫模薄膜11, 11A. . . Release film
12．．．接著劑層12. . . Subsequent layer
12a．．．圓形接著劑層部12a. . . Round adhesive layer
12b．．．周邊接著劑層部12b. . . Peripheral adhesive layer
13．．．黏著薄膜13. . . Adhesive film
13a．．．圓形標籤部13a. . . Round label
13b．．．周邊部13b. . . Peripheral part
14．．．基材薄膜14. . . Substrate film
15．．．黏著劑層15. . . Adhesive layer
20、20A、20B．．．接著薄膜20, 20A, 20B. . . Next film
21．．．切晶固晶薄膜twenty one. . . Tangent crystal film
22．．．切口twenty two. . . incision
圖1(a)為本發明一實施形態之接著薄膜之概視圖，圖1(b)為相同薄膜之剖面圖。Fig. 1(a) is a schematic view of a film which is an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view of the same film.
圖2(a)為用以說明切口形成步驟之接著薄膜之平面圖，圖2(b)為相同薄膜之剖面圖。Fig. 2(a) is a plan view showing the film of the slit forming step, and Fig. 2(b) is a cross-sectional view of the same film.
圖3為用以說明接著劑層之捲取步驟之模式圖。Fig. 3 is a schematic view for explaining the winding step of the adhesive layer.
圖4(a)為本發明一實施形態之晶圓加工用膠帶之概視圖，圖4(b)為相同膠帶之平面圖，圖4(c)為相同膠帶之剖面圖。4(a) is a schematic view showing a tape for wafer processing according to an embodiment of the present invention, wherein FIG. 4(b) is a plan view of the same tape, and FIG. 4(c) is a cross-sectional view of the same tape.
11．．．脫模薄膜11. . . Release film
11A．．．脫模薄膜11A. . . Release film
12．．．接著劑層12. . . Subsequent layer
20A、20B．．．接著薄膜20A, 20B. . . Next film
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99136514A TWI445796B (en) | 2010-10-26 | 2010-10-26 | Followed by film and wafer processing tape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW99136514A TWI445796B (en) | 2010-10-26 | 2010-10-26 | Followed by film and wafer processing tape |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201217483A TW201217483A (en) | 2012-05-01 |
| TWI445796B true TWI445796B (en) | 2014-07-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW99136514A TWI445796B (en) | 2010-10-26 | 2010-10-26 | Followed by film and wafer processing tape |
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| Country | Link |
|---|---|
| TW (1) | TWI445796B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI765762B (en) * | 2020-12-25 | 2022-05-21 | 梭特科技股份有限公司 | Method for fixing chips with corner or side contact without impact force |
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| Publication number | Publication date |
|---|---|
| TW201217483A (en) | 2012-05-01 |
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