TWI445168B - 光感測元件 - Google Patents
光感測元件 Download PDFInfo
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- TWI445168B TWI445168B TW100141913A TW100141913A TWI445168B TW I445168 B TWI445168 B TW I445168B TW 100141913 A TW100141913 A TW 100141913A TW 100141913 A TW100141913 A TW 100141913A TW I445168 B TWI445168 B TW I445168B
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- oxide semiconductor
- metal oxide
- semiconductor layer
- photo sensor
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- 239000004065 semiconductor Substances 0.000 claims description 69
- 229910044991 metal oxide Inorganic materials 0.000 claims description 66
- 150000004706 metal oxides Chemical class 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 88
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 28
- 239000011651 chromium Substances 0.000 description 12
- -1 poly(3-hexylthiophene) Polymers 0.000 description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 3
- NSRGWYQTFLSLOJ-UHFFFAOYSA-N antimony;cobalt(3+) Chemical compound [Co+3].[Sb] NSRGWYQTFLSLOJ-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000007779 soft material Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- KODMFZHGYSZSHL-UHFFFAOYSA-N aluminum bismuth Chemical compound [Al].[Bi] KODMFZHGYSZSHL-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
- H10K39/32—Organic image sensors
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Description
本發明是有關於一種光感測元件,且特別是有關於一種具有金屬氧化物半導體層的光感測元件。
光感測元件,可廣泛應用於影像產品如安全監控、數位相機、玩具、手機、PDA、影像電話、指紋辨識器等。習知常見的光感測器可分為可見光光感測器或紫外光光感測器,其係個別使用不同的材料來做感光材料。
習知紫外光光感測器常使用氮化鎵(gallium nitride,GaN)或氮化鋁鎵(AlGaN)等三五族(III-V)金屬來當做感光材料。然而,在製程過程中,GaN或AlGaN具有高污染,不易於半導體製程中整合等問題,因此其應用性較低。
另一方面來說,可見光光感測器常使用非晶矽薄膜或多晶矽薄膜作為感光材料,然而具有穩定性差等問題,因此無法有效應用在光感測器產品上。
此外,若欲將紫外光光感測器與可見光光感測器做整合,其因個別使用不同的材料來做感光材料,造成製程複雜度增加、成本相對提昇,因此不適用於大量生產製造。
本發明之一態樣為一種光感測元件,其包含基板、第一光感測器以及第二光感測器。第一光感測器形成於基板以吸收具有一第一光波段的一第一光線。第二光感測器形成於該基板上,其中第二光感測器包含第二金屬氧化物半導體層與有機感光層,有機感光層設置於第二金屬氧化物半導體層上,以使第二光感測器用以吸收具有一第二光波段的一第二光線。
依據本發明一實施方式,上述第一光波段為紫外光波段,第一、第二金屬氧化物半導體層為銦鎵鋅氧化物、銦鋅氧化物、銦鋅錫氧化物或上述之組合。
依據本發明一實施方式,上述第二光波段為可見光波段,有機感光層之材質包含聚3-己烷噻吩(ploy(3-hexylthiophene);P3HT)。
依據本發明一實施方式,上述第一金屬氧化物半導體層的厚度與上述第二金屬氧化物半導體層的厚度不同。
依據本發明一實施方式,上述第一金屬氧化物半導體層之含氧量與上述第二金屬氧化物半導體層之含氧量不同。
依據本發明一實施方式,其中第一光感測器之堆疊結構為交錯型(Staggered)或共平面型(Coplanar)。
依據本發明一實施方式,其中第二光感測器之堆疊結構為交錯型或共平面型。
依據本發明一實施方式,上述光感測元件還包括具有第三金屬氧化物半導體層的薄膜電晶體。上述薄膜電晶體之結構為交錯型或共平面型。
依據本發明另一實施方式,上述第一、第二、第三金屬氧化物半導體層之厚度不同。
屬氧化物半導體層之厚度不同。
依據本發明另一實施方式,上述第一、第二、第三金屬氧化物半導體層之含氧量不同。
上述所揭露之光感測元件,其結合紫外光感測器以及可見光光感測器,以藉由不同的含氧量或不同厚度的金屬氧化物半導體層,使上述元件得到不同的啟動電壓。此不同啟動電壓的元件可以簡化整體感測電路設計,以不同電壓啟閉不同元件。
以下將以圖式及詳細說明清楚說明本發明之精神,任何所屬技術領域中具有通常知識者在瞭解本發明之較佳實施例後,當可由本發明所教示之技術,加以改變及修飾,其並不脫離本發明之精神與範圍。
參照第1圖,其繪示依據本發明之一實施方式的一種光感測元件100之剖面結構示意圖。光感測元件100包含基板110、第一光感測器120以及第二光感測器140。其中,第一光感測器120與第二光感測器140之結構為交錯型(Staggered)。雖然在第1圖中之第一光感測器120與第二光感測器140之結構為交錯型,但是也可為共平面型(coplanar)。
基板110可選擇剛性或軟性材料。根據一實施方式,剛性材質之基板110可為玻璃或石英。根據另一實施方式,軟性材質之基板110可為塑膠。
第一光感測器120形成於基板110上,其中第一光感測器120包含第一閘極121、閘介電層130、第一金屬氧化物半導體層122、第一源極123a與第一汲極123b。其中,第一金屬氧化物半導體層122用以吸收具有第一光波段的第一光線。在此實施方式中,第一光線為紫外光,第一光波段為紫外光波段。
第一閘極121形成於基板110上,位於第一金屬氧化物半導體層122之下方。第一閘極121的材料通常可為金屬、矽化金屬、氮化金屬、摻雜多晶矽或氧化金屬。其中,金屬可為鉬(Mo)、鉻(Cr)、銅、銀、金、鋁、上述金屬之合金或複合層。矽化金屬可為矽化鈦、矽化鈷、矽化鎳或矽化鉭。氮化金屬可為氮化鈦或氮化鉭。氧化金屬例如可為氧化銦錫(ITO)或氧化銦鋅(IZO)。在一實施方式中,製備第一閘極121的方法依序藉由沉積、微影製程以及蝕刻製程來形成。
閘介電層130覆蓋第一閘極121與基板100上。根據一實施方式,閘介電層130可為氧化矽、氮氧化矽、氮化矽、二氧化鈦、五氧化二鈮或氧化鉿。在一實施方式中,形成閘介電層130之方法,可例如為化學氣相沉積法、濺鍍法或蒸鍍法。
第一金屬氧化物半導體層122位於第一閘極121之上。第一金屬氧化物半導體層122的材料為銦鎵鋅氧化物、銦鋅氧化物、銦鋅錫氧化物或上述之任意組合。在一實施方式中,形成第一金屬氧化物半導體層122的方法,例如可使用濺鍍製程。
第一源極123a與第一汲極123b位於第一金屬氧化物半導體層122上之相對兩側。第一源極123a與第一汲極123b可為導體材料。例如,第一源極123a與第一汲極123b可為鉬(Mo)、鉻(Cr)、銅、銀、金、鋁、上述金屬之合金或複合層,或是透明導電材料(如ITO)。在一實施方式中,製備第一源極123a與第一汲極123b的方法依序藉由沉積、微影製程以及蝕刻來形成。
第二光感測器140形成於基板110上,其中第二光感測器140包含第二閘極141、閘介電層130、第二金屬氧化物半導體層142、第二源極143a、第二汲極143b以及有機感光層145。其中,有機感光層145設置於第二金屬氧化物半導體層142上並與第二金屬氧化物半導體層142相接以使第二光感測器140用以吸收具有第二光波段的第二光線。在此實施方式中,第二光線為可見光,第二光波段為可見光波段。
第二閘極141形成於基板110上,位於第二金屬氧化物半導體層142之下方。第一閘極121的材料通常可為金屬、矽化金屬、氮化金屬、摻雜多晶矽或氧化金屬。其中,金屬可為金屬可為鉬(Mo)、鉻(Cr)、銅、銀、金、鋁、上述金屬之合金或複合層。矽化金屬可為矽化鈦、矽化鈷、矽化鎳或矽化鉭。氮化金屬可為氮化鈦或氮化鉭。氧化金屬例如可為氧化銦錫(ITO)或氧化銦鋅(IZO)。在一實施方式中,製備第二閘極141的方法依序藉由沉積、微影製程以及蝕刻製程來形成。
第二金屬氧化物半導體層142為銦鎵鋅氧化物、銦鋅鍍製程。
在一或多個實施方式中,第一金屬氧化物半導體層122之第一厚度與第二金屬氧化物半導體層142的第二厚度不同。因此,此實施方式中第一光感測器120、第二光感測器140可有不同的啟動電壓。
在一或多個實施方式中,第一金屬氧化物半導體層122之含氧量與第二金屬氧化物半導體層142之含氧量不同。因此,此實施方式中第一光感測器120、第二光感測器140可有不同的啟動電壓。在一實施方式中,濺鍍製備第二金屬氧化物半導體層142時的氧氣流量可與濺鍍製備第一金屬氧化物半導體層122時的氧氣流量不相同。
第二源極143a與第二汲極143b位於第二金屬氧化物半導體層142上之相對兩側,其中有機感光層145位於第二汲極143b及第二源極143a上並部分接觸至第二金屬氧化物半導體層142。
有機感光層145之材質包含聚3-己烷噻吩(ploy(3-hexylthiophene);P3HT)。在一實施例中,製作有機半導體層145之方法,可例如為蒸鍍法、旋轉塗佈法或噴墨法。
在一或多個可選擇的實施方式中,光感測元件100可更包含一保護層150覆蓋於第一光感測器120、第二光感測器140上。在一實施方式中,保護層150之材料可為透光之材料,例如可為氧化矽層。
參考第2圖,其繪示依據本發明之一另實施方式的一種光感測元件之剖面結構示意圖。光感測元件200包含基
板210、第一光感測器220、第二光感測器240以及薄膜電晶體260。其中,第2圖之基板210、第一光感測器220、第二光感測器240分別與第1圖之基板110、第一光感測器120、第二光感測器140相同,故該些元件不再詳細敘述。在此實施方式中。薄膜電晶體260之結構為交錯型(Staggered)。
薄膜電晶體260形成於基板210上,相鄰於第一光感測器220和第二光感測器240。薄膜電晶體260包含第三閘極261、閘介電層230、第三金屬氧化物半導體層262、第三源極263a與第三汲極263b。
第三閘極261形成於基板210上,位於第三金屬氧化物半導體層262之下方。第三閘極261的材料通常可為金屬、矽化金屬、氮化金屬、摻雜多晶矽或氧化金屬。其中,金屬可為鉬(Mo)、鉻(Cr)、銅、銀、金、鋁、上述金屬之合金或複合層。矽化金屬可為矽化鈦、矽化鈷、矽化鎳或矽化鉭。氮化金屬可為氮化鈦或氮化鉭。氧化金屬例如可為氧化銦錫(ITO)或氧化銦鋅(IZO)。在一實施方式中,製備第三閘極261的方法可依序藉由沉積、微影製程以及蝕刻製程來形成。
閘介電層230覆蓋第三閘極261與基板210上。根據一實施方式,閘介電層230可為氧化矽、氮氧化矽或氮化矽、二氧化鈦、五氧化二鈮或氧化鉿。在一實施方式中,形成閘介電層230之方法,可例如為化學氣相沉積法、濺鍍法或蒸鍍法。
第三金屬氧化物半導體層262位於第三閘極261之
鍍法或蒸鍍法。
第三金屬氧化物半導體層262位於第三閘極261之上。第三金屬氧化物半導體層262的材料為銦鎵鋅氧化物、銦鋅氧化物、銦鋅錫氧化物或上述之任意組合。在一實施方式中,形成第三金屬氧化物半導體層262的方法,例如可使用濺鍍製程。
在一或多個實施方式中,第三金屬氧化物半導體層262具有一第三厚度,且第三厚度分別與第一金屬氧化物半導體層222之第一厚度和第二金屬氧化物半導體層242之第二厚度不同。因此,此實施方式中第一光感測器220、第二光感測器240、薄膜電晶體260可有三個不同啟動電壓。
在一或多個實施方式中,第一金屬氧化物半導體層222、第二金屬氧化物半導體層242、第三金屬氧化物半導體層262之含氧量不同。因此,此實施方式中第一光感測器220、第二光感測器240、薄膜電晶體260可有三個不同啟動電壓。在一實施方式中,濺鍍製備第三金屬氧化物半導體層262時的氧氣流量可與濺鍍製備第一金屬氧化物半導體層222、第二金屬氧化物半導體層242時的氧氣流量不相同。
第三源極263a與第三汲極263b位於第三金屬氧化物半導體層262上之相對兩側。第三汲極263b與第三源極263a可為導體材料。例如,第三汲極263b與第三源極263a可為鉬(Mo)、鉻(Cr)、銅、銀、金、鋁、上述金屬之合金或複合層。在一實施方式中,製備第三汲極263b與第三源極263a的方法依序藉由沉積、微影製程以及蝕刻來形成。
在一或多個可選擇的實施方式中,光感測元件200可更包含保護層250覆蓋於第一光感測器220、第二光感測器240上。在一實施方式中,保護層250之材料可為透光之材料,例如可為氧化矽層。
在一或多個可選擇的實施方式中,光感測元件200可更包含遮光層270位於第三汲極263b與第三源極263a之上方,用以遮蔽第三金屬氧化物半導體層262,以防止產生光電流。在一實施方式中,遮光層270可為不透光的金屬層鉬(Mo)、鉻(Cr)、鉬鉻合金(MoCr)、鋁、鋁釹合金(AlNd)或銅。
由上述本發明實施方式可知,光感測元件結合紫外光光感測器以及可見光光感測器,或可選擇性的相鄰於薄膜電晶體,以藉由不同的含氧量或不同厚度的金屬氧化物半導體層,使上述元件得到不同的啟動電壓。此不同啟動電壓的元件可以簡化整體感測電路設計,以不同電壓啟閉不同元件。
雖然本發明已以較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100、200...光感測元件
110、210...基板
120、220...第一光感測器
130、230...閘介電層
121、221...第一閘極
122、222...第一金屬氧化物半導體層
123a、223a...第一源極
123b、223b...第一汲極
140、240...第二光感測器
141、241...第二閘極
142、242...第二金屬氧化物半導體層
143a、243a...第二源極
143b、243b...第二汲極
145、245...有機感光層
150、250...保護層
260...薄膜電晶體
261...第三閘極
262...第三金屬氧化物半導體層
263a...第三源極
263b...第三汲極
270...遮光層
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之詳細說明如下:
第1圖繪示依據本發明之一實施方式的一種光感測元件之剖面結構示意圖。
第2圖繪示依據本發明之一另實施方式的一種光感測元件之剖面結構示意圖。
100...光感測元件
110...基板
120...第一光感測器
130...閘介電層
121...第一閘極
122...第一金屬氧化物半導體層
123a...第一源極
123b...第一汲極
140...第二光感測器
141...第二閘極
142...第二金屬氧化物半導體層
143a...第二源極
143b...第二汲極
145...有機感光層
150...保護層
Claims (9)
- 一種光感測元件,包含:一基板;一第一光感測器,形成於該基板上,其中該第一光感測器包含一第一金屬氧化物半導體層,用以吸收具有一第一光波段的一第一光線;以及一第二光感測器,形成於該基板上,其中該第二光感測器包含一第二金屬氧化物半導體層與一有機感光層,該有機感光層設置於該第二金屬氧化物半導體層上,以使該第二光感測器用以吸收具有一第二光波段的一第二光線,其中該第一金屬氧化物半導體層的厚度與該第二金屬氧化物半導體層的厚度不同,或該第一金屬氧化物半導體層之含氧量與該第二金屬氧化物半導體層之含氧量不同。
- 如請求項1所述之光感測元件,其中該第一光波段為紫外光波段,該第一、第二金屬氧化物半導體層為銦鎵鋅氧化物、銦鋅氧化物、銦鋅錫氧化物或上述之組合。
- 如請求項2所述之光感測元件,其中該第二光波段為可見光波段,該有機感光層之材質包含聚3-己烷噻吩。
- 如請求項1所述之光感測元件,其中該第一光感測器之結構為交錯型或共平面型。
- 如請求項1所述之光感測元件,其中該第二光感測器之結構為交錯型或共平面型。
- 如請求項1所述之光感測元件,更包含一薄膜電晶體形成於該基板上,並相鄰於該第一光感測器和第二光感測器。
- 如請求項6所述之光感測元件,該薄膜電晶體包含一第三金屬氧化物半導體層,其中該薄膜電晶體之結構為交錯型或共平面型。
- 如請求項6所述之光感測元件,其中該第一、第二、第三金屬氧化物半導體層的厚度不相同。
- 如請求項6所述之光感測元件,其中該第一、第二、第三金屬氧化物半導體層之含氧量不同。
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